Substrate processing apparatus

Abstract

The present invention provides a substrate processing apparatus capable of forming an appropriate liquid flow in a processing tank. The substrate processing apparatus of the present disclosure includes a processing tank and a fluid supply unit. The processing tank processes a plurality of substrates by immersing the arranged substrates in a processing liquid. The fluid supply unit is disposed inside the processing tank at a position below the plurality of substrates and generates a liquid flow of the processing liquid inside the processing tank by ejecting a fluid. In addition, the fluid supply unit has a plurality of ejection paths for ejecting the fluid to different regions in the arrangement direction of the plurality of substrates.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus. Background Art

[0002] Conventionally, there has been known a substrate processing apparatus that processes a batch of substrates together by immersing a batch formed of a plurality of substrates in a processing tank storing a processing liquid.

[0003] In such a substrate processing apparatus, for example, in order to make the substrate processing uniform, a gas supply unit that supplies a gas such as nitrogen may be provided in the processing tank to form a liquid flow in the processing tank (see Patent Document 1).

[0004] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2018-174258 Summary of the Invention

[0005] Problems to be Solved by the Invention

[0006] The present disclosure provides a technique capable of forming an appropriate liquid flow in a processing tank.

[0007] Solutions for Solving the Problems

[0008] A substrate processing apparatus according to one aspect of the present disclosure includes a processing tank and a fluid supply unit. The processing tank processes a plurality of substrates by immersing the arranged substrates in a processing liquid. The fluid supply unit is disposed inside the processing tank at a position lower than the plurality of substrates and generates a liquid flow of the processing liquid inside the processing tank by ejecting a fluid. In addition, the fluid supply unit has a plurality of ejection paths that eject the fluid to different regions in the arrangement direction of the plurality of substrates.

[0009] Effects of the Invention

[0010] According to the present disclosure, an appropriate liquid flow can be formed in the processing tank. Brief Description of the Drawings

[0011] Figure 1 is a plan view showing a substrate processing apparatus according to the first embodiment.

[0012] Figure 2 is a block diagram showing the structure of an etching processing tank according to the first embodiment.

[0013] Figure 3 is a perspective view of a gas supply unit according to the first embodiment.

[0014] Figure 4 is a cross-sectional view of the gas supply unit according to the first embodiment.

[0015] Figure 5It is a side view of the gas supply unit according to the first embodiment.

[0016] Figure 6 It is a side view of the gas supply unit according to the first modification of the first embodiment.

[0017] Figure 7 It is a side view of the gas supply unit according to the second modification of the first embodiment.

[0018] Figure 8 It is a top view of the gas supply unit according to the second modification of the first embodiment.

[0019] Figure 9 It is a side view of the gas supply unit according to the second embodiment.

[0020] Figure 10 It is a perspective view of the gas supply unit according to the third embodiment.

[0021] Figure 11 It is a perspective view showing the structure of the position adjustment unit according to the first modification of the third embodiment.

[0022] Figure 12 It is a perspective view showing the structure of the position adjustment unit according to the second modification of the third embodiment.

[0023] Figure 13 It is a cross-sectional view of the gas supply unit according to the fourth embodiment.

[0024] Figure 14 It is a perspective view of the gas supply unit according to the fifth embodiment as viewed from above.

[0025] Figure 15 It is a perspective view of the gas supply unit according to the fifth embodiment as viewed from below. Detailed Embodiments

[0026] Hereinafter, modes (hereinafter referred to as “embodiments”) for implementing the substrate processing apparatus of the present disclosure will be described in detail with reference to the drawings. In addition, the substrate processing apparatus of the present disclosure is not limited to this embodiment. In addition, each embodiment can be appropriately combined within a range where the processing contents do not conflict. In addition, in the following embodiments, the same reference numerals are given to the same parts, and repeated descriptions are omitted.

[0027] In addition, in each of the drawings referred to below, for the sake of easy understanding of the description, an orthogonal coordinate system is sometimes shown: the X-axis direction, the Y-axis direction, and the Z-axis direction that are orthogonal to each other are defined, and the positive direction of the Z-axis is set as the vertically upward direction.

[0028] There is a known substrate processing apparatus that processes a batch of substrates together by immersing a batch formed of multiple substrates in a processing tank storing a processing liquid.

[0029] In such a substrate processing apparatus, in order to make the substrate processing uniform, a gas supply unit for supplying a gas such as nitrogen may be provided in the processing tank to form a liquid flow in the processing tank. Specifically, in a conventional substrate processing apparatus, in order to form a uniform liquid flow in the processing tank, a gas supply unit having a plurality of ejection ports along the arrangement direction of the multiple substrates is disposed in the lower part of the processing tank, and gas is ejected from each ejection port at the same flow rate.

[0030] However, even if the gas is ejected uniformly as described above, local deviations may occur in the liquid flow formed in the processing tank. For example, a plurality of substrates forming a batch are arranged with gaps therebetween. Since a large amount of gas enters a certain gap to form a sufficient liquid flow, on the other hand, little gas enters another gap and the formation of the liquid flow may be insufficient. Thus, it is desired to form an appropriate liquid flow in the processing tank.

[0031] (First Embodiment)

[0032] <Structure of Substrate Processing Apparatus>

[0033] First, with reference to Figure 1 the structure of the substrate processing apparatus according to the embodiment will be described. Figure 1 is a top view of a substrate processing apparatus 1 according to the first embodiment.

[0034] As Figure 1 shown, the substrate processing apparatus 1 according to the embodiment includes a carrier loading / unloading unit 2, a batch forming unit 3, a batch placing unit 4, a batch conveying unit 5, a batch processing unit 6, and a control unit 7.

[0035] The carrier loading / unloading unit 2 includes a carrier stage 20, a carrier conveying mechanism 21, carrier storage units 22, 23, and a carrier placement stage 24.

[0036] The carrier stage 20 is for placing a plurality of carriers 9 conveyed from the outside. The carrier 9 is a container that houses a plurality of (e.g., 25) wafers W arranged horizontally one above the other. The carrier conveying mechanism 21 conveys the carrier 9 between the carrier stage 20, the carrier storage units 22, 23, and the carrier placement stage 24.

[0037] A plurality of wafers W before processing are sent from the carrier 9 placed on the carrier placement stage 24 to the batch processing unit 6 by a substrate conveying mechanism 30 described later. In addition, a plurality of wafers W after processing are sent from the batch processing unit 6 to the carrier 9 placed on the carrier placement stage 24 by the substrate conveying mechanism 30.

[0038] The lot forming unit 3 has a substrate transfer mechanism 30 for forming lots. A lot is composed of a plurality (e.g., 50 pieces) of wafers W that are combined from the wafers W stored in one or more carriers 9 and processed simultaneously. The plurality of wafers W forming one lot are arranged at a constant interval with their plate surfaces facing each other.

[0039] The substrate transfer mechanism 30 transfers a plurality of wafers W between the carrier 9 placed on the carrier stage 24 and the lot placement unit 4.

[0040] The lot placement unit 4 has a lot transfer table 40 for temporarily placing (standing by) the lots transferred between the lot forming unit 3 and the lot processing unit 6 by the lot transfer unit 5. The lot transfer table 40 has a feed side lot placement table 41 for placing the pre - processed lot formed by the lot forming unit 3 and a discharge side lot placement table 42 for placing the lot processed by the lot processing unit 6. A plurality of wafers W in a lot quantity are placed on the feed side lot placement table 41 and the discharge side lot placement table 42 in a standing - up posture and arranged one after another.

[0041] The lot transfer unit 5 has a lot transfer mechanism 50 for transferring lots between the lot placement unit 4 and the lot processing unit 6 and inside the lot processing unit 6. The lot transfer mechanism 50 has a rail 51, a moving body 52, and a substrate holding body 53.

[0042] The rail 51 is arranged along the X - axis direction straddling the lot placement unit 4 and the lot processing unit 6. The moving body 52 is configured to be able to move along the rail 51 while holding a plurality of wafers W. The substrate holding body 53 is provided on the moving body 52 for holding a plurality of wafers W arranged one after another in a standing - up posture.

[0043] The lot processing unit 6 performs etching processing, cleaning processing, drying processing, etc. on a plurality of wafers W arranged one after another in a standing - up posture as one lot. Two etching processing devices 60, a cleaning processing device 70, a substrate holding body cleaning processing device 80, and a drying processing device 90 are arranged along the rail 51 in the lot processing unit 6.

[0044] The etching processing device 60 performs etching processing on the lot. The cleaning processing device 70 performs cleaning processing on the lot. The substrate holding body cleaning processing device 80 performs cleaning processing on the substrate holding body 53. The drying processing device 90 performs drying processing on the lot. In addition, the number of the etching processing device 60, the cleaning processing device 70, the substrate holding body cleaning processing device 80, and the drying processing device 90 is not limited to Figure 1 the example.

[0045] The etching processing device 60 includes a processing tank 61 for etching, a processing tank 62 for rinsing, and substrate lifting mechanisms 63, 64.

[0046] The processing tank 61 can accommodate a batch quantity of wafers W arranged in an upright posture and store a processing liquid for etching (hereinafter also referred to as "etching liquid"). Details of the processing tank 61 will be described later.

[0047] The processing liquid for rinsing (such as pure water, etc.) is stored in the processing tank 62. The substrate lifting mechanisms 63 and 64 hold a plurality of wafers W forming a batch in an upright posture and arranged one after another.

[0048] The etching processing apparatus 60 uses the substrate lifting mechanism 63 to hold the batch transported by the batch transport unit 5 and immerses it in the etching liquid in the processing tank 61 to perform etching processing. The etching processing is performed for about 1 hour to 3 hours, for example.

[0049] The batch that has undergone etching processing in the processing tank 61 is transported to the processing tank 62 by the batch transport unit 5. Then, the etching processing apparatus 60 uses the substrate lifting mechanism 64 to hold the transported batch and performs rinsing processing by immersing it in the rinsing liquid in the processing tank 62. The batch that has undergone rinsing processing in the processing tank 62 is transported to the processing tank 71 of the cleaning processing apparatus 70 by the batch transport unit 5.

[0050] The cleaning processing apparatus 70 includes a processing tank 71 for cleaning, a processing tank 72 for rinsing, and substrate lifting mechanisms 73 and 74. A processing liquid for cleaning (such as SC-1 (a mixed liquid of ammonia, hydrogen peroxide, and water), etc.) is stored in the processing tank 71 for cleaning.

[0051] The processing liquid for rinsing (such as pure water, etc.) is stored in the processing tank 72 for rinsing. The substrate lifting mechanisms 73 and 74 hold a batch quantity of a plurality of wafers W in an upright posture and arranged one after another.

[0052] The cleaning processing apparatus 70 uses the substrate lifting mechanism 73 to hold the batch transported by the batch transport unit 5 and performs cleaning processing by immersing it in the cleaning liquid in the processing tank 71.

[0053] The batch that has undergone cleaning processing in the processing tank 71 is transported to the processing tank 72 by the batch transport unit 5. Then, the cleaning processing apparatus 70 uses the substrate lifting mechanism 74 to hold the transported batch and performs rinsing processing by immersing it in the rinsing liquid in the processing tank 72. The batch that has undergone rinsing processing in the processing tank 72 is transported to the processing tank 91 of the drying processing apparatus 90 by the batch transport unit 5.

[0054] The drying processing apparatus 90 has a processing tank 91 and a substrate lifting mechanism 92. A processing gas for drying (such as IPA (isopropyl alcohol), etc.) is supplied to the processing tank 91. The substrate lifting mechanism 92 holds a batch quantity of a plurality of wafers W in an upright posture and arranged one after another.

[0055] The drying processing device 90 holds the lot conveyed by the lot conveyance unit 5 using the substrate lifting mechanism 92, and performs a drying process using the processing gas for drying supplied into the processing tank 91. The lot that has undergone the drying process in the processing tank 91 is conveyed to the lot placement unit 4 by the lot conveyance unit 5.

[0056] The substrate holder cleaning processing device 80 performs a cleaning process on the substrate holder 53 of the lot conveyance mechanism 50 by supplying a processing liquid for cleaning and further supplying a drying gas to the substrate holder 53.

[0057] The control unit 7 controls the operations of the respective parts of the substrate processing device 1 (the carrier loading / unloading unit 2, the lot forming unit 3, the lot placement unit 4, the lot conveyance unit 5, the lot processing unit 6, etc.). The control unit 7 controls the operations of the respective parts of the substrate processing device 1 based on signals from switches, various sensors, etc.

[0058] The control unit 7 is, for example, a computer and has a storage medium 8 that can be read by the computer. Programs for controlling various processes executed in the substrate processing device 1 are stored in the storage medium 8.

[0059] The control unit 7 controls the operation of the substrate processing device 1 by reading and executing the programs stored in the storage medium 8. In addition, the programs are stored in the storage medium 8 that can be read by the computer, and can also be loaded from other storage media into the storage medium 8 of the control unit 7.

[0060] Examples of the storage medium 8 that can be read by the computer include a hard disk (HD), a floppy disk (FD), a compact disc (CD), a magneto-optical disc (MO), a memory card, etc.

[0061] <Structure of the Processing Tank for Etching>

[0062] Next, with reference to Figure 2 the processing tank 61 for etching will be described. Figure 2 is a block diagram showing the structure of the processing tank 61 for etching according to the first embodiment.

[0063] In the processing tank 61, the following etching process is performed: using a prescribed etching solution, the silicon nitride film is selectively etched in the silicon nitride film (SiN) and the silicon oxide film (SiO2) formed on the wafer W. In this etching process, a solution obtained by adding a silicon (Si)-containing compound to an aqueous solution of phosphoric acid (H3PO4) and adjusting the silicon concentration is used as the etching solution.

[0064] As a method for adjusting the silicon concentration in the etching solution, the following methods can be used: a method of immersing a dummy substrate in an aqueous phosphoric acid solution to dissolve silicon (aging treatment), and a method of dissolving a silicon-containing compound such as colloidal silica in an aqueous phosphoric acid solution. In addition, the silicon concentration can be adjusted by adding an aqueous solution of a silicon-containing compound to the aqueous phosphoric acid solution.

[0065] As Figure 2 shown in the figure, the processing tank 61 for etching includes an inner tank 101 and an outer tank 102. The inner tank 101 is a box-shaped tank open at the top, and stores the etching solution inside. A batch formed by a plurality of wafers W is immersed in the inner tank 101. The outer tank 102 is open at the top and is disposed around the upper part of the inner tank 101. The etching solution overflowing from the inner tank 101 flows into the outer tank 102.

[0066] In addition, the processing tank 61 includes an aqueous phosphoric acid solution supply unit 103, a silicon supply unit 104, and a DIW supply unit 105.

[0067] The aqueous phosphoric acid solution supply unit 103 has an aqueous phosphoric acid solution supply source 131, an aqueous phosphoric acid solution supply pipeline 132, and a flow regulator 133.

[0068] The aqueous phosphoric acid solution supply source 131 supplies an aqueous phosphoric acid solution in which the phosphoric acid concentration is concentrated to a desired concentration. The aqueous phosphoric acid solution supply pipeline 132 connects the aqueous phosphoric acid solution supply source 131 and the outer tank 102, and supplies the aqueous phosphoric acid solution from the aqueous phosphoric acid solution supply source 131 to the outer tank 102.

[0069] The flow regulator 133 is provided in the aqueous phosphoric acid solution supply pipeline 132 and is used to adjust the supply amount of the aqueous phosphoric acid solution supplied to the outer tank 102. The flow regulator 133 is composed of an on-off valve, a flow control valve, a flow meter, etc.

[0070] The silicon supply unit 104 has a silicon supply source 141, a silicon supply pipeline 142, and a flow regulator 143.

[0071] The silicon supply source 141 is a tank storing an aqueous solution of a silicon-containing compound. The silicon supply pipeline 142 connects the silicon supply source 141 and the outer tank 102, and supplies the aqueous solution of the silicon-containing compound from the silicon supply source 141 to the outer tank 102.

[0072] The flow regulator 143 is provided in the silicon supply pipeline 142 and is used to adjust the supply amount of the aqueous solution of the silicon-containing compound supplied to the outer tank 102. The flow regulator 143 is composed of an on-off valve, a flow control valve, a flow meter, etc. By adjusting the supply amount of the aqueous solution of the silicon-containing compound using the flow regulator 143, the silicon concentration of the etching solution is adjusted.

[0073] The DIW supply unit 105 includes a DIW supply source 151, a DIW supply pipeline 152, and a flow regulator 153. The DIW supply unit 105 supplies DIW (DeIonized Water) to the outer tank 102 to replenish the water evaporated due to heating the etching solution.

[0074] The DIW supply pipeline 152 connects the DIW supply source 151 and the outer tank 102, and supplies DIW at a specified temperature from the DIW supply source 151 to the outer tank 102.

[0075] The flow regulator 153 is provided in the DIW supply pipeline 152 and is used to adjust the supply amount of the DIW supplied to the outer tank 102. The flow regulator 153 is composed of an on-off valve, a flow control valve, a flow meter, etc. By adjusting the supply amount of the DIW using the flow regulator 153, the temperature, phosphoric acid concentration, and silicon concentration of the etching solution are adjusted.

[0076] In addition, the processing tank 61 includes a circulation unit 106 and a gas supply unit 107. The circulation unit 106 circulates the etching solution between the inner tank 101 and the outer tank 102. The circulation unit 106 includes a circulation pipeline 161, a plurality of processing liquid supply nozzles 162, a filter 163, a heater 164, and a pump 165.

[0077] The circulation pipeline 161 connects the outer tank 102 and the inner tank 101. One end of the circulation pipeline 161 is connected to the outer tank 102, and the other end of the circulation pipeline 161 is connected to a plurality of processing liquid supply nozzles 162 disposed inside the inner tank 101.

[0078] The filter 163, the heater 164, and the pump 165 are provided in the circulation pipeline 161. The filter 163 is used to remove impurities from the etching solution flowing in the circulation pipeline 161. The heater 164 is used to heat the etching solution flowing in the circulation pipeline 161 to a temperature suitable for the etching process. The pump 165 is used to send the etching solution in the outer tank 102 to the circulation pipeline 161. The filter 163, the heater 164, and the pump 165 are arranged in sequence from the upstream side.

[0079] The circulation unit 106 conveys the etching solution from the outer tank 102 into the inner tank 101 via the circulation pipeline 161 and a plurality of processing liquid supply nozzles 162. The etching solution conveyed into the inner tank 101 overflows from the inner tank 101, and thus flows out to the outer tank 102 again. In this way, the etching solution circulates between the inner tank 101 and the outer tank 102.

[0080] In addition, the circulation unit 106 can also heat the etching solution using the heater 164 to make the etching solution in a boiling state.

[0081] The gas supply unit 107 is disposed inside the inner tank 101. Specifically, the gas supply unit 107 is disposed at a position below the plurality of wafers W and the plurality of processing liquid supply nozzles 162. The gas supply unit 107 generates a liquid flow of the etching liquid inside the inner tank 101 by ejecting gas into the inner tank 101.

[0082] <Structure of Gas Supply Unit>

[0083] Here, refer to Figures 3 to 5 The structure of the gas supply unit 107 according to the first embodiment will be described. Figure 3 FIG. is a perspective view of the gas supply unit 107 according to the first embodiment. Figure 4 FIG. is a cross-sectional view of the gas supply unit 107 according to the first embodiment. Figure 5 FIG. is a side view of the gas supply unit 107 according to the first embodiment. In addition, Figure 4 is Figure 5 a cross-sectional view taken along the line VI-VI in Figure 5 FIG. is a side view of the third ejection path 173 and the fourth ejection path 174 of the gas supply unit 107 as viewed from the positive X-axis side to the negative X-axis side.

[0084] As Figure 3 shown, the gas supply unit 107 includes a plurality (eight here) of ejection paths as the ejection paths of the gas. Specifically, the gas supply unit 107 includes two first ejection paths 171, two second ejection paths 172, two third ejection paths 173, and two fourth ejection paths 174.

[0085] When viewed from the direction facing the wafer W ( Figure 2 the Y-axis direction shown in FIG.), the two first ejection paths 171 are arranged line-symmetrically with respect to the vertical line passing through the center of the wafer W. The same applies to the two second ejection paths 172, the two third ejection paths 173, and the two fourth ejection paths 174, which are arranged line-symmetrically with respect to the vertical line passing through the center of the wafer W.

[0086] The two first ejection paths 171 are respectively disposed on the rear side (Y-axis positive direction side) of the inner tank 101, and include a first extension portion 711 having a vertically extending portion and a second extension portion 712 horizontally extending from the lower end portion of the first extension portion 711 toward the front side (Y-axis negative direction side) of the inner tank 101. The second extension portion 712 extends along the arrangement direction of the plurality of wafers W.

[0087] Two first extension parts 711 are connected to a gas supply source 700 via a flow regulator 713. Here, it is assumed that nitrogen is supplied from the gas supply source 700, but the gas supplied from the gas supply source 700 can be an inert gas other than nitrogen (such as helium, argon, etc.) or a gas other than an inert gas. The flow regulator 713 is used to adjust the flow rate of nitrogen supplied to the first ejection path 171. The flow regulator 713 is composed of an on-off valve, a flow control valve, a flow meter, etc.

[0088] The two second ejection paths 172 are respectively arranged on the rear side of the inner tank 101, and include a first extension part 721 having a vertically extending portion and a second extension part 722 horizontally extending from the lower end portion of the first extension part 721 toward the front side of the inner tank 101. The second extension part 722 extends along the arrangement direction of the plurality of wafers W. In addition, the second extension part 722 is arranged at a position radially inward of the second extension part 712 of the first ejection path 171 with respect to the wafer W.

[0089] Two first extension parts 721 are connected to the gas supply source 700 via a flow regulator 723. The flow regulator 723 is used to adjust the flow rate of nitrogen supplied to the second ejection path 172. The flow regulator 723 is composed of an on-off valve, a flow control valve, a flow meter, etc.

[0090] The two third ejection paths 173 are respectively arranged on the rear side of the inner tank 101, and include a first extension part 731 having a vertically extending portion and a second extension part 732 horizontally extending from the lower end portion of the first extension part 731 toward the front side of the inner tank 101. The second extension part 732 extends along the arrangement direction of the plurality of wafers W. In addition, the second extension part 732 is arranged at a position radially inward of the second extension part 722 of the second ejection path 172 with respect to the wafer W.

[0091] Two first extension parts 731 are connected to the gas supply source 700 via a flow regulator 733. The flow regulator 733 is used to adjust the flow rate of nitrogen supplied to the third ejection path 173. The flow regulator 733 is composed of an on-off valve, a flow control valve, a flow meter, etc.

[0092] The two fourth ejection paths 174 are respectively arranged on the rear side of the inner tank 101, include a first extension part 741 having a vertically extending portion and a second extension part 742 horizontally extending from the lower end portion of the first extension part 741 toward the front side of the inner tank 101. The second extension part 742 extends along the arrangement direction of the plurality of wafers W. In addition, the second extension part 742 is arranged above the second extension part 732 of the third ejection path 173.

[0093] The two first extension parts 741 are connected to the gas supply source 700 via the flow regulator 743. The flow regulator 743 is used to adjust the flow rate of nitrogen supplied to the fourth ejection path 174. The flow regulator 743 is composed of an on-off valve, a flow control valve, a flow meter, etc.

[0094] As Figure 4 shown, in the second extension part 712 of the first ejection path 171, a plurality of (only one is illustrated here) ejection openings 715 are provided along the extending direction of the second extension part 712, that is, along the arrangement direction of the plurality of wafers W. The plurality of ejection openings 715 are arranged at positions between the wafers W in the arrangement direction of the plurality of wafers W in such a manner that nitrogen supplied from the gas supply source 700 enters between the wafers W.

[0095] In the second extension part 722 of the second ejection path 172, a plurality of (only one is illustrated here) ejection openings 725 are provided along the extending direction of the second extension part 722, that is, along the arrangement direction of the plurality of wafers W. The plurality of ejection openings 725 are arranged at positions between the wafers W in the arrangement direction of the plurality of wafers W in such a manner that nitrogen supplied from the gas supply source 700 enters between the wafers W.

[0096] In the second extension part 732 of the third ejection path 173, a plurality of (only one is illustrated here) ejection openings 735 are provided along the extending direction of the second extension part 732, that is, along the arrangement direction of the plurality of wafers W. The plurality of ejection openings 735 are arranged at positions between the wafers W in the arrangement direction of the plurality of wafers W in such a manner that nitrogen supplied from the gas supply source 700 enters between the wafers W.

[0097] In the second extension part 742 of the fourth ejection path 174, a plurality of (only one is illustrated here) ejection openings 745 are provided along the extending direction of the second extension part 742, that is, along the arrangement direction of the plurality of wafers W. The plurality of ejection openings 745 are arranged at positions between the wafers W in the arrangement direction of the plurality of wafers W in such a manner that nitrogen supplied from the gas supply source 700 enters between the wafers W.

[0098] In addition, a plurality of ejection ports 715, 725, 735, 745 are provided in the lower half of the cylindrical second extension portions 712, 722, 732, 742. Thereby, it is possible to suppress the etching liquid from entering the inside of the second extension portions 712, 722, 732, 742. Further, the plurality of ejection ports 715, 725, 735, 745 are provided at a position below the side portions of the second extension portions 712, 722, 732, 742 and above the lower portions of the second extension portions 712, 722, 732, 742. Thereby, compared with the case where the ejection ports 715, 725, 735, 745 are provided at the lower portions of the second extension portions 712, 722, 732, 742, it is possible to make the ejection directions of nitrogen consistent.

[0099] The plurality of ejection ports 715 provided in the first ejection path 171 and the plurality of ejection ports 725 provided in the second ejection path 172 are arranged corresponding to all the gaps between the plurality of wafers W. That is, for example, in the case where one batch is composed of 50 wafers W, 49 ejection ports 715, 725 are provided in the first ejection path 171 and the second ejection path 172, respectively.

[0100] On the other hand, as Figure 5 shown, the plurality of ejection ports 735 provided in the third ejection path 173 are arranged corresponding to the gaps between the wafers W in the front half of the processing tank 61 among the plurality of wafers W. In addition, the plurality of ejection ports 745 provided in the fourth ejection path 174 are arranged corresponding to the gaps between the wafers W in the rear half of the processing tank 61 among the plurality of wafers W. Thereby, nitrogen from the third ejection path 173 is supplied to the wafers W in the front half of the processing tank 61, and nitrogen from the fourth ejection path 174 is supplied to the wafers W in the rear half of the processing tank 61.

[0101] In this way, the gas supply unit 107 according to the first embodiment has a plurality of ejection paths for ejecting nitrogen to different regions in the arrangement direction of the plurality of wafers W, and here, there are a third ejection path 173 and a fourth ejection path 174. The third ejection path 173 and the fourth ejection path 174 are respectively connected to different flow regulators 733, 743, and can independently control the ejection time and ejection flow rate of nitrogen. Thus, for example, when a liquid flow deviation occurs between the front side and the rear side of the processing tank 61, the control unit 7 can control the flow regulators 733, 743 to make the ejection time and ejection flow rate of nitrogen different at the third ejection path 173 and the fourth ejection path 174 to suppress the liquid flow deviation. In this way, according to the substrate processing apparatus 1 according to the first embodiment, compared with the case where nitrogen is ejected with an equal ejection time and ejection flow rate in the arrangement direction of the plurality of wafers W, a more appropriate liquid flow can be formed in the processing tank 61.

[0102] In addition, asFigure 4 As shown, compared with the first extension portions 711 and 721 and the second extension portions 712 and 722 of the first ejection path 171 and the second ejection path 172, the inner diameters (flow path diameters) of the first extension portions 731 and 741 and the second extension portions 732 and 742 of the third ejection path 173 and the fourth ejection path 174 are smaller. Thus, the pressure losses of the first extension portions 731 and 741 and the second extension portions 732 and 742 can be made higher than the pressure losses of the first extension portions 711 and 721 and the second extension portions 712 and 722. Therefore, nitrogen can be ejected from the third ejection path 173 and the fourth ejection path 174 at a lower flow rate. In other words, the minimum flow rate of nitrogen that can be ejected from the third ejection path 173 and the fourth ejection path 174 can be reduced. Consequently, the liquid flow of the etching solution can be controlled more precisely.

[0103] <Examples of deformation of the gas supply unit>

[0104] Next, with reference to Figures 6 to 8 Examples of deformation of the gas supply unit 107 according to the above-described first embodiment will be described. Figure 6 It is a side view of the gas supply unit according to the first deformation example of the first embodiment. Figure 7 It is a side view of the gas supply unit according to the second deformation example of the first embodiment. Figure 8 It is a top view of the gas supply unit according to the second deformation example of the first embodiment.

[0105] As Figure 6 shown, the gas supply unit 107A according to the first deformation example includes a third ejection path 173A and a fourth ejection path 174A disposed above the third ejection path 173A. A plurality of ejection ports 735A are provided in a central region in the arrangement direction of the plurality of wafers W of the second extension portion 732A of the third ejection path 173A. In addition, the second extension portion 742A of the fourth ejection path 174A has a plurality of ejection ports 745A in a front region in the arrangement direction of the plurality of wafers W, and has a plurality of ejection ports 746A in a rear region in the arrangement direction of the plurality of wafers W.

[0106] By configuring in this way, the ejection time and ejection flow rate of nitrogen can be made different in the front and rear regions and the central region in the arrangement direction of the plurality of wafers W.

[0107] In addition, as Figure 7 and Figure 8 shown, the gas supply unit 107B according to the second deformation example includes a third ejection path 173B, a fourth ejection path 174B, and a fifth ejection path 175B.

[0108] The third ejection path 173B includes a first extension portion 731B and a second extension portion 732B. The first extension portion 731B is connected to a gas supply source 700 via a flow regulator 733B, and a plurality of ejection ports 735B are provided in the second extension portion 732B. The fourth ejection path 174B includes a first extension portion 741B and a second extension portion 742B. The first extension portion 741B is connected to a gas supply source 700 via a flow regulator 743B, and a plurality of ejection ports 745B are provided in the second extension portion 742B. The fifth ejection path 175B includes a first extension portion 751B and a second extension portion 752B. The first extension portion 751B is connected to a gas supply source 700 via a flow regulator 753B, and a plurality of ejection ports 755B are provided in the second extension portion 752B. The second extension portion 732B of the third ejection path 173B, the second extension portion 742B of the fourth ejection path 174B, and the second extension portion 752B of the fifth ejection path 175B are arranged in sequence along the arrangement direction of the plurality of wafers W.

[0109] With such a configuration, it is possible to independently control the regions in the front, the center, and the rear in the arrangement direction of the plurality of wafers W, respectively.

[0110] <Other modification examples of the gas supply unit>

[0111] In the first embodiment, the first modification example, and the second modification example, it is assumed that the innermost ejection path among the plurality of ejection paths arranged along the direction orthogonal to the arrangement direction of the plurality of wafers W is divided in the arrangement direction of the plurality of wafers W. However, it is not limited thereto, and the ejection path divided in the arrangement direction of the plurality of wafers W may be the outermost ejection path among the plurality of ejection paths arranged along the direction orthogonal to the arrangement direction of the plurality of wafers W, or may be other ejection paths.

[0112] In addition, in the first embodiment, the first modification example, and the second modification example, it is assumed that a part of the ejection paths among the plurality of ejection paths arranged along the direction orthogonal to the arrangement direction of the plurality of wafers W is divided in the arrangement direction of the plurality of wafers W. However, it is not limited thereto, and it may also be that all of the plurality of ejection paths arranged along the direction orthogonal to the arrangement direction of the plurality of wafers W are divided in the arrangement direction of the plurality of wafers W.

[0113] In addition, in the first embodiment, the first modification example, and the second modification example, examples in which the ejection path divided in the arrangement direction of the plurality of wafers W is bisected or trisected are described, but the division form does not necessarily need to be equal division.

[0114] (Second embodiment)

[0115] Next, refer toFigure 9 The structure of the gas supply unit according to the second embodiment will be described. Figure 9 FIG. 3 is a side view of the gas supply unit according to the second embodiment.

[0116] As Figure 9 shown, the gas supply unit 107C according to the second embodiment includes a third ejection path 173C and a fourth ejection path 174C disposed above the third ejection path 173C.

[0117] In the second extension portion 732C of the third ejection path 173C according to the second embodiment, a nitrogen ejection port 736C that ejects nitrogen toward the inner wall 111 of the inner groove 101 is provided. The nitrogen ejection port 736C is disposed between the first wafer W facing the inner wall 111 of the inner groove 101 and the inner wall 111 in the arrangement direction of the plurality of wafers W.

[0118] Similarly, in the second extension portion 742C of the fourth ejection path 174C according to the second embodiment, a nitrogen ejection port 746C that ejects nitrogen toward the inner wall 111 of the inner groove 101 is provided. The nitrogen ejection port 746C is disposed between the first wafer W facing the inner wall 111 of the inner groove 101 and the inner wall 111 in the arrangement direction of the plurality of wafers W.

[0119] The liquid flow formed inside the inner groove 101 may be different between the first wafer W facing the inner wall 111 of the inner groove 101 and the inner wall 111 and between the wafers W. For example, an upward flow of the etching solution is formed between the wafers W, and in contrast, a downward flow of the etching solution may be formed between the first wafer W and the inner wall 111.

[0120] In contrast, the gas supply unit 107C according to the second embodiment includes the nitrogen ejection ports 736C and 746C that eject nitrogen toward the inner wall 111 of the inner groove 101, whereby the downward flow formed between the first wafer W and the inner wall 111 can be suppressed. Therefore, according to the gas supply unit 107C according to the second embodiment, it is possible to suppress the deviation of the liquid flow between the first wafer W facing the inner wall 111 of the inner groove 101 and the inner wall 111 and between the wafers W.

[0121] Here, an example in which the gas supply unit 107C includes the nitrogen ejection ports 736C and 746C that eject nitrogen toward the front inner wall 111 of the inner groove 101 has been described. However, it is not limited thereto, and the gas supply unit 107C may also include nitrogen ejection ports that eject nitrogen toward the rear inner wall or the side inner wall of the inner groove 101.

[0122] (Third Embodiment)

[0123] Next, with reference to Figure 10The structure of the gas supply unit according to the third embodiment will be described. Figure 10 It is a perspective view of the gas supply unit according to the third embodiment.

[0124] As Figure 10 shown, the gas supply unit 107D according to the third embodiment includes two first ejection paths 171D, two second ejection paths 172D, two third ejection paths 173D, and two fourth ejection paths 174D. The first ejection path 171D includes a first extension 711D and a second extension 712D. The second ejection path 172D includes a first extension 721D and a second extension 722D. The third ejection path 173D includes a first extension 731D and a second extension 732D. The fourth ejection path 174D includes a first extension 741D and a second extension 742D. A plurality of ejection ports (not shown here) are provided in the second extensions 712D, 722D, 732D, 742D. In addition, the plurality of ejection ports provided in the second extension 732D are arranged corresponding to the gaps of the first half of the wafers W arranged on the front side, and the plurality of ejection ports provided in the second extension 742D are arranged corresponding to the gaps of the second half of the wafers W arranged on the rear side.

[0125] In addition, the gas supply unit 107D according to the third embodiment includes a position adjustment unit 176D for adjusting the positions of the first ejection path 171D, the second ejection path 172D, the third ejection path 173D, and the fourth ejection path 174D.

[0126] The position adjustment unit 176D according to the third embodiment includes a mounting plate 761. A plurality of mounting holes 762 are formed in the mounting plate 761. The plurality of mounting holes 762 are arranged, for example, along the arrangement direction of the plurality of wafers W and in a direction orthogonal to the arrangement direction. Each mounting hole 762 is formed to be large enough for the first extensions 711D, 721D, 731D, 741D to pass through. Therefore, the mounting plate 761 can mount the first ejection path 171D to the fourth ejection path 174D at an arbitrary position. In addition, each mounting hole 762 is provided so that the first extension 731D of the third ejection path 173D and the first extension 741D of the fourth ejection path 174D can pass through together.

[0127] In addition, the position adjustment unit 176D includes a fixing unit 763 for fixing the first extensions 711D, 721D, 731D, 741D to the mounting holes 762.

[0128] Thus, according to the gas supply unit 107D according to the third embodiment, since it includes the position adjustment unit 176D, the positions of the first ejection path 171D, the second ejection path 172D, the third ejection path 173D, and the fourth ejection path 174D can be adjusted. Therefore, for example, based on the results of the etching processes of a plurality of wafers W acquired in advance, the configurations of the first ejection path 171D, the second ejection path 172D, the third ejection path 173D, and the fourth ejection path 174D can be optimized. Thereby, a liquid flow of the etching solution that makes the etching processes of the plurality of wafers W more uniform can be formed inside the processing tank 61.

[0129] In addition, the fixing unit 763 may also be configured to be able to fix the first extension portions 711D, 721D, 731D, and 741D at a plurality of fixing positions in the vertical direction. By configuring it in this way, the height positions of the first ejection path 171D, the height position of the second ejection path 172D, the height position of the third ejection path 173D, and the height position of the fourth ejection path 174D can also be adjusted.

[0130] <Modification Example of the Position Adjustment Unit>

[0131] Next, with reference to Figure 11 and Figure 12 a modification example of the above-described position adjustment unit 176D will be described. Figure 11 is a perspective view showing the structure of the position adjustment unit according to the first modification example of the third embodiment. In addition, Figure 12 is a perspective view showing the structure of the position adjustment unit according to the second modification example of the third embodiment.

[0132] As Figure 11 shown, the gas supply unit 107E according to the first modification example of the third embodiment includes a position adjustment unit 176E. The position adjustment unit 176E includes a lead screw shaft 764, a holding unit 765, and a driving unit 766. The holding unit 765 holds two first ejection paths 171E, two second ejection paths 172E, two third ejection paths 173E, and two fourth ejection paths 174E.

[0133] The lead screw shaft 764 and the driving unit 766 are an example of a moving mechanism for moving the holding unit 765. The lead screw shaft 764 extends along the arrangement direction (Y-axis direction) of the plurality of wafers W. The driving unit 766 rotates the lead screw shaft 764 about its axis, thereby moving the holding unit 765 along the arrangement direction of the plurality of wafers W.

[0134] In addition, although illustrations are omitted here, the moving mechanism including the lead screw shaft 764 and the drive unit 766 is configured to include a bearing that axially supports the lead screw shaft 764, a rail that supports and holds the holding unit 765 so as to be movable in the arrangement direction of the plurality of wafers W, and the like.

[0135] The position adjustment unit 176E according to the first modification uses the lead screw shaft 764 and the drive unit 766 to move the holding unit 765. Thereby, the two first ejection paths 171E, the two second ejection paths 172E, the two third ejection paths 173E, and the two fourth ejection paths 174E can be moved along the arrangement direction of the plurality of wafers W.

[0136] Thereby, the gas supply unit 107E according to the first modification can optimize the positions of the two first ejection paths 171E, the two second ejection paths 172E, the two third ejection paths 173E, and the two fourth ejection paths 174E in the arrangement direction of the plurality of wafers W. For example, the positions can be optimized in advance based on the results of the etching process of the plurality of wafers W obtained in advance. That is, the positions of the two first ejection paths 171E, the two second ejection paths 172E, the two third ejection paths 173E, and the two fourth ejection paths 174E in the arrangement direction of the plurality of wafers W can be adjusted so that the etching amounts of the plurality of wafers W are equal.

[0137] In addition, the position adjustment of the position adjustment unit 176E can also be performed during the etching process. For example, the control unit 7 may control the position adjustment unit 176E to change the ejection positions of the first ejection path 171E to the fourth ejection path 174E while immersing the plurality of wafers W in the inner tank 101 and ejecting nitrogen from the first ejection path 171E to the fourth ejection path 174E. In this case, the control unit 7 changes the ejection positions of the first ejection path 171E to the fourth ejection path 174E by a stroke smaller than the distance between the plurality of wafers W (for example, a stroke that is half of the distance between the plurality of wafers W). The form of the position change of the first ejection path 171E to the fourth ejection path 174E may be a form of reciprocating between two locations or other forms.

[0138] In this way, the control unit 7 can change the ejection positions of the first ejection path 171E to the fourth ejection path 174E along the arrangement direction of the plurality of wafers W during the etching process. Thereby, it is possible to suppress a deviation in the supply amount of nitrogen in which nitrogen enters a part of the gaps between the plurality of wafers W more and does not enter the other part of the gaps much. Therefore, it is possible to achieve uniformization of the etching amounts between the plurality of wafers W.

[0139] As Figure 12As shown, the gas supply unit 107F according to the second modification of the third embodiment includes a position adjustment unit 176F. The position adjustment unit 176F includes a lead screw shaft 767, a plurality of holding units 768, and a drive unit 769. The plurality of (here, six) holding units 768 respectively hold the first ejection path 171F, the second ejection path 172F, the third ejection path 173F, and the fourth ejection path 174F, the third ejection path 173F, and the fourth ejection path 174F, the second ejection path 172F, and the first ejection path 171F. In addition, the position adjustment unit 176F may include one holding unit that holds all of the first ejection path 171F to the fourth ejection path 174F.

[0140] The lead screw shaft 767 and the drive unit 769 are an example of a moving mechanism that moves the plurality of holding units 768. The lead screw shaft 767 extends along a direction (X-axis direction) orthogonal to the arrangement direction of the plurality of wafers W. The drive unit 769 rotates the lead screw shaft 767 about its axis, thereby moving the plurality of holding units 768 together along a direction orthogonal to the arrangement direction of the plurality of wafers W.

[0141] The position adjustment unit 176F according to the second modification uses the lead screw shaft 767 and the drive unit 769 to move the plurality of holding units 768. As a result, the two first ejection paths 171F, the two second ejection paths 172F, the two third ejection paths 173F, and the two fourth ejection paths 174F can be moved along a direction orthogonal to the arrangement direction of the plurality of wafers W.

[0142] As a result, the gas supply unit 107F according to the second modification can optimize the positions of the first ejection path 171F to the fourth ejection path 174F in a direction orthogonal to the arrangement direction of the plurality of wafers W.

[0143] The position adjustment of the position adjustment unit 176F can be performed in advance based on the results of the etching process of the plurality of wafers W acquired in advance, or can be performed during the etching. In the case of performing during the etching, the control unit 7 may control the position adjustment unit 176F to change the ejection positions of the first ejection path 171F to the fourth ejection path 174F in a state where the plurality of wafers W are immersed in the inner tank 101 and nitrogen is ejected from the first ejection path 171F to the fourth ejection path 174F.

[0144] In this way, the control unit 7 can also change the ejection positions of the first ejection path 171F to the fourth ejection path 174F in a direction orthogonal to the arrangement direction of the plurality of wafers W during the etching process. As a result, the deviation in the supply amount of nitrogen within the plane of one wafer W can be suppressed. Therefore, the uniformity of the etching amount within the plane of the wafer W can be achieved.

[0145] In the first modification example, an example in which the position adjustment unit 176E integrally moves the first ejection path 171E to the fourth ejection path 174E has been described. However, the position adjustment unit 176E may also be configured to independently move the first ejection path 171E to the fourth ejection path 174E. In this case, the gas supply unit 107E only needs to include a moving mechanism that holds and moves the first ejection path 171E, a moving mechanism that holds and moves the second ejection path 172E, and a moving mechanism that holds and moves the third ejection path 173E and the fourth ejection path 174E. The same applies to the second modification example. That is, the gas supply unit 107F only needs to include a moving mechanism that holds and moves the first ejection path 171F, a moving mechanism that holds and moves the second ejection path 172F, and a moving mechanism that holds and moves the third ejection path 173F and the fourth ejection path 174F.

[0146] (Fourth Embodiment)

[0147] Next, with reference to Figure 13 the structure of the gas supply unit according to the fourth embodiment will be described. Figure 13 is a cross-sectional view of the gas supply unit according to the fourth embodiment. In addition, Figure 13 the gas supply unit 107G shown is provided to include the first ejection path 171G to the fourth ejection path 174G that are the same as the first ejection path 171 to the fourth ejection path 174 according to the first embodiment. However, it may also include the first ejection path to the fourth ejection path that are the same as those of other embodiments.

[0148] As Figure 13 shown, the control unit 7 may also control the flow regulators 713 to 743 (refer to Figure 3 ) to switch Figure 13 the first ejection state shown in the upper figure of Figure 13 and the second ejection state shown in the lower figure of

[0149] . The first ejection state is a state in which nitrogen is ejected from a part of the ejection paths among the first ejection path 171G to the fourth ejection path 174G. Here, nitrogen is ejected from two first ejection paths 171G, two third ejection paths 173G, and two fourth ejection paths 174G. In addition, the second ejection state is a state in which nitrogen is ejected from two second ejection paths 172G.

[0150] (Fifth Embodiment)

[0151] Next, with reference to Figure 14 and Figure 15 the structure of the gas supply unit according to the fifth embodiment will be described. Figure 14 is a perspective view of the gas supply unit according to the fifth embodiment as viewed from above. In addition, Figure 15 is a perspective view of the gas supply unit according to the fifth embodiment as viewed from below.

[0152] As Figure 14 and Figure 15 shown, the gas supply unit 107H according to the fifth embodiment includes a first ejection path 171H to a ninth ejection path 179H and an ejection plate 177. A plurality of (nine here) ejection regions 178H1 to 178H9 partitioned from each other are provided on the ejection plate 177.

[0153] The first ejection path 171H to the ninth ejection path 179H are respectively connected to the ejection regions 178H1 to 178H9. A plurality of ejection ports 715H are formed on the upper surface of the ejection region 178H1, a plurality of ejection ports 725H are formed on the upper surface of the ejection region 178H2, and a plurality of ejection ports 735H are formed on the upper surface of the ejection region 178H3. In addition, a plurality of ejection ports 745H are formed on the upper surface of the ejection region 178H4, a plurality of ejection ports 755H are formed on the upper surface of the ejection region 178H5, and a plurality of ejection ports 765H are formed on the upper surface of the ejection region 178H6. In addition, a plurality of ejection ports 775H are formed on the upper surface of the ejection region 178H7, a plurality of ejection ports 785H are formed on the upper surface of the ejection region 178H8, and a plurality of ejection ports 795H are formed on the upper surface of the ejection region 178H9.

[0154] The ejection regions 178H1 to 178H9 are arranged in a 3×3 matrix pattern with respect to the ejection plate 177, for example. Specifically, the ejection regions 178H1, 178H2, and 178H3 are arranged along the arrangement direction of the plurality of wafers W, and the ejection regions 178H8, 178H4, and 178H9 are arranged along the arrangement direction of the plurality of wafers W. In addition, the ejection regions 178H7, 178H6, and 178H5 are arranged along the arrangement direction of the plurality of wafers W.

[0155] In this way, the gas supply unit 107H according to the fifth embodiment can control the nitrogen ejection time and ejection flow rate for each of the ejection regions 178H1 to 178H9 by dividing the region below the plurality of wafers W into a plurality of (nine in this case) ejection regions 178H1 to 178H9. For example, the control unit 7 can control at least one of the nitrogen ejection time and ejection flow rate for the ejection regions 178H1 to 178H9 based on the results of the etching processes of the plurality of wafers W obtained in advance.

[0156] In addition, the ejection plate 177 is detachable with respect to the first ejection path 171H to the ninth ejection path 179H. Thus, for example, based on the results of the etching processes of the plurality of wafers W obtained in advance, the optimal ejection plate 177 can be selected from among a plurality of ejection plates 177 having different configurations and shapes for the ejection regions 178H1 to 178H9. Thereby, further uniformity of the etching processes among the plurality of wafers W can be achieved.

[0157] Furthermore, in the ejection plate 177 according to the fifth embodiment, ejection ports for ejecting nitrogen toward the inner wall 111 of the inner groove 101 may be provided in the same manner as in the gas supply unit 107C according to the second embodiment. In this case, the ejection ports for ejecting nitrogen toward the inner wall 111 are provided, for example, in the ejection regions 178H1, 178H7, and 178H8. In addition, the gas supply unit 107H according to the fifth embodiment may also include a moving mechanism for moving the first ejection path 171H to the ninth ejection path 179H, in the same manner as the gas supply units 107E and 107F according to the third embodiment.

[0158] (Other embodiments)

[0159] In the above-described embodiments, examples in which the gas supply units 107, 107A to 107H eject gases such as nitrogen have been described. However, the gas supply units 107, 107A to 107H may eject liquids and are not limited to gases.

[0160] As described above, the substrate processing apparatus 1 according to the embodiment includes a processing tank 61 and a fluid supply unit (as an example, gas supply units 107, 107A to 107H). The processing tank 61 processes a plurality of substrates (as an example, wafers W) arranged by immersing them in a processing liquid (as an example, an etching liquid) (as an example, etching processing). The fluid supply unit is disposed inside the processing tank 61 at a position lower than the plurality of substrates and generates a liquid flow of the processing liquid by ejecting a fluid (as an example, nitrogen) inside the processing tank 61. In addition, the fluid supply unit has a plurality of ejection paths (as an example, third ejection paths 173, 173A to 173G, fourth ejection paths 174, 174A to 174G, first ejection path 171H to ninth ejection path 179H) that eject the fluid to different regions in the arrangement direction of the plurality of substrates.

[0161] Accordingly, by providing a plurality of ejection paths that eject the fluid to different regions in the arrangement direction of the plurality of substrates, a more appropriate liquid flow can be formed in the processing tank 61 as compared with the case where the fluid is ejected with an equal ejection time and ejection flow rate in the arrangement direction of the plurality of substrates.

[0162] The fluid supply unit (as an example, gas supply units 107, 107A to 107H) may also supply a gas as the fluid. By supplying the gas as the fluid to the inside of the processing tank 61, a liquid flow of the processing liquid can be formed inside the processing tank 61. Accordingly, it is possible to achieve uniformity in processing between the substrates and uniformity in processing within the plane of the substrate. In addition, it is possible to achieve uniformity in the temperature of the processing liquid.

[0163] The fluid supply unit (as an example, gas supply units 107, 107A to 107H) may also include other ejection paths (as an example, first ejection paths 171, 171A to 171H, second ejection paths 172, 172A to 172H). The other ejection paths are arranged and disposed in a direction orthogonal to the arrangement direction of the plurality of substrates and eject the fluid. In this case, the plurality of ejection paths may have a smaller inner diameter than the other ejection paths.

[0164] Accordingly, it is possible to make the pressure loss of the plurality of ejection paths higher than the pressure loss of the other ejection paths. Therefore, the fluid can be ejected from the plurality of ejection paths at a lower flow rate. In other words, the minimum flow rate of the fluid that can be ejected from the plurality of ejection paths can be reduced. Thus, the liquid flow of the processing liquid can be controlled more precisely.

[0165] The fluid supply unit (as an example, the gas supply unit 107H) may also include a discharge plate 177. The discharge plate 177 includes a plurality of discharge regions (as an example, discharge regions 178H1 to 178H9) partitioned from each other. In addition, each of the plurality of discharge regions has a plurality of discharge ports (as an example, discharge ports 715H, 725H, 735H, 745H, 755H, 765H, 775H, 785H, 795H), and is connected to a corresponding discharge path among the plurality of discharge paths. Thereby, it is possible to control the discharge time and discharge flow rate of the fluid for each discharge region. In addition, for example, by selecting the optimal discharge plate from a plurality of discharge plates having different configurations and shapes of the discharge regions according to the processing results of a plurality of substrates acquired in advance, further uniformity of substrate processing can be achieved.

[0166] The substrate processing apparatus 1 according to the embodiment may also include a moving mechanism (as an example, position adjustment units 176E, 176F) that moves a plurality of discharge paths (as an example, first discharge paths 171E to 174E, first discharge paths 171F to 174F).

[0167] Thereby, it is possible to optimize the positions of the plurality of discharge paths in the arrangement direction of the plurality of substrates. For example, it is possible to adjust the positions of the plurality of discharge paths in the arrangement direction of the plurality of substrates so that the processing of the plurality of substrates is equal.

[0168] The fluid supply unit (as an example, the gas supply unit 107C) may also include discharge ports (as an example, discharge ports 736C, 746C) that discharge fluid toward the inner wall 111 of the processing tank 61. Thereby, it is possible to suppress the downward flow formed between the first substrate and the inner wall 111. Therefore, it is possible to suppress the deviation of the liquid flow generated between the first substrate facing the inner wall 111 and the inner wall 111 and between the substrates.

[0169] The fluid supply unit (as an example, the gas supply unit 107D) may also include a mounting plate 761 for mounting the discharge path. The mounting plate 761 has a plurality of mounting holes 762, and the discharge path can be mounted with respect to any of the plurality of mounting holes 762. Therefore, for example, it is possible to optimize the configuration of the plurality of discharge paths based on the processing results of a plurality of substrates acquired in advance. Thereby, it is possible to form a liquid flow of the processing liquid that makes the processing of the plurality of substrates more uniform inside the processing tank 61.

[0170] The substrate processing apparatus according to the embodiment includes a processing tank 61, a fluid supply unit (as an example, gas supply units 107, 107A to 107H), and a control unit 7. The processing tank 61 immerses a plurality of arranged substrates (as an example, wafers W) in a processing liquid (as an example, an etching liquid) and performs processing (as an example, etching processing). The fluid supply unit is disposed inside the processing tank 61 at a position lower than the plurality of substrates, and generates a liquid flow of the processing liquid inside the processing tank 61 by ejecting a fluid (as an example, nitrogen). The control unit 7 controls at least one of the ejection time and the ejection flow rate of the fluid ejected from the fluid supply unit. In addition, the fluid supply unit has a plurality of ejection paths (as an example, third ejection paths 173, 173A to 173G, fourth ejection paths 174, 174A to 174G, first ejection paths 171H to ninth ejection paths 179H) for ejecting the fluid to different regions in the arrangement direction of the plurality of substrates.

[0171] Thus, by providing a plurality of ejection paths for ejecting the fluid to different regions in the arrangement direction of the plurality of substrates, a more appropriate liquid flow can be formed in the processing tank 61 as compared with the case where the fluid is ejected with equal ejection time and ejection flow rate in the arrangement direction of the plurality of substrates. In addition, the control unit can more appropriately control the liquid flow in the processing tank 61 by independently controlling the ejection time and the ejection flow rate of the fluid ejected from the plurality of ejection paths.

[0172] The substrate processing apparatus 1 according to the embodiment may also include a moving mechanism (as an example, position adjustment units 176E, 176F) for moving a plurality of ejection paths (as an example, first ejection paths 171E to fourth ejection paths 174E, first ejection paths 171F to fourth ejection paths 174F). In this case, the control unit 7 may also move the plurality of ejection paths by controlling the moving mechanism in a state where the plurality of substrates are immersed in the processing tank 61 and the fluid is ejected from the plurality of ejection paths, thereby changing the ejection positions of the plurality of ejection paths.

[0173] Thus, by using the moving mechanism to move the plurality of ejection paths during the processing of the plurality of substrates, it is possible to achieve uniformity in the processing between the plurality of substrates or within the plane of the substrate.

[0174] The moving mechanism (as an example, position adjustment unit 176E) may also move the plurality of ejection paths (as an example, gas supply unit 107E) along the arrangement direction of the plurality of substrates.

[0175] Thus, it is possible to suppress a deviation in the supply amount of the fluid such that the fluid enters more into a part of the gaps between the plurality of substrates and less into another part of the gaps. Therefore, it is possible to achieve uniformity in the processing between the plurality of substrates.

[0176] The control unit 7 may also move the plurality of ejection paths by a stroke smaller than the distance between the plurality of substrates. Thereby, it is possible to appropriately suppress the deviation in the supply amount of the fluid between the plurality of substrates.

[0177] It should be considered that the embodiments disclosed this time are illustrative in all aspects and not restrictive. In fact, the above-described embodiments can be specifically implemented in various ways. In addition, the above-described embodiments can also be omitted, replaced, and changed in various ways without departing from the appended claims and their gist.

Claims

1. A substrate processing apparatus, wherein, the substrate processing apparatus includes: a processing tank that processes a plurality of substrates arranged by immersing them in a processing liquid; a processing liquid supply nozzle disposed in the processing tank for supplying the processing liquid to the processing tank; and a fluid supply unit disposed inside the processing tank at a position below the plurality of substrates, and generating a liquid flow of the processing liquid inside the processing tank by ejecting a fluid, the fluid supply unit has a plurality of ejection paths for ejecting the fluid to different regions in the arrangement direction of the plurality of substrates, the plurality of ejection paths include a first ejection path and a second ejection path, and a plurality of ejection ports provided in the first ejection path are disposed on the front side of the processing tank in the arrangement direction of the plurality of substrates, and a plurality of ejection ports provided in the second ejection path are disposed on the rear side of the processing tank in the arrangement direction of the plurality of substrates, the substrate processing apparatus further includes a control unit that independently controls at least one of the ejection time and the ejection flow rate of the fluid ejected from the first ejection path and the second ejection path.

2. The substrate processing apparatus according to claim 1, wherein, the fluid supply unit supplies gas as the fluid.

3. The substrate processing apparatus according to claim 1 or 2, wherein, the fluid supply unit includes other ejection paths that are arranged and eject the fluid in a direction orthogonal to the arrangement direction of the plurality of substrates, the plurality of ejection paths have a smaller inner diameter than the other ejection paths.

4. The substrate processing apparatus according to claim 1 or 2, wherein, the fluid supply unit includes an ejection plate provided with a plurality of ejection regions partitioned from each other, each of the plurality of ejection regions has a plurality of ejection ports and is connected to a corresponding ejection path among the plurality of ejection paths.

5. The substrate processing apparatus according to claim 1 or 2, wherein, the substrate processing apparatus includes a moving mechanism for moving the plurality of ejection paths.

6. The substrate processing apparatus according to claim 1 or 2, wherein, the fluid supply unit includes ejection ports for ejecting the fluid toward the inner wall of the processing tank.

7. The substrate processing apparatus according to claim 1 or 2, wherein, the fluid supply unit includes a mounting plate for mounting the ejection paths, the mounting plate has a plurality of mounting holes, and the ejection paths can be mounted with respect to any of the plurality of mounting holes.

8. The substrate processing apparatus according to claim 1, wherein, the substrate processing apparatus includes a moving mechanism for moving the plurality of ejection paths, the control unit moves the plurality of ejection paths by controlling the moving mechanism in a state where the plurality of substrates are immersed in the processing tank and the fluid is ejected from the plurality of ejection paths, thereby changing the ejection positions of the plurality of ejection paths.

9. The substrate processing apparatus according to claim 8, wherein, the moving mechanism moves the plurality of ejection paths along the arrangement direction of the plurality of substrates.

10. The substrate processing apparatus according to claim 9, wherein the control unit moves the plurality of ejection paths by a stroke smaller than the distance between the plurality of substrates.

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