Laser crystallization device

Abstract

The laser crystallization device according to the present disclosure may include a light source part, a first optical part, a second optical part, a blocking part, a third optical part and a workbench. The light source part may emit a first laser beam. The first optical part may change the path and size of the first laser beam and convert the first laser beam into a second laser beam. The second optical part may split the second laser beam and convert it into a split laser beam. The split laser beams include a central laser beam and a peripheral laser beam surrounding the central laser beam, and the blocking part may block at least a part of the central laser beam. The third optical part may change the path of the laser beam passing through the blocking part in the split laser beams and convert the laser beam into a third laser beam. The workbench may be arranged relative to the third optical part. The first optical part may change the path and size of the first laser beam based on the third laser beam irradiated on the workbench.

Description

Technical Field

[0001] The present disclosure relates to a laser crystallization apparatus with improved reliability. Background Art

[0002] Thin film transistors are manufactured on substrates and applied to active matrix display devices. Thin film transistors using polycrystalline semiconductor films have the advantage of high electron mobility and high-speed operation compared to those using amorphous semiconductor films. Therefore, research is being conducted on technologies that crystallize amorphous semiconductor films formed on insulating substrates such as glass to form semiconductor films with crystalline structures.

[0003] As a method for crystallizing amorphous semiconductor films, thermal annealing using furnace annealing, rapid annealing, or laser annealing are being studied, and they can also be used in combination. Among them, the laser annealing method has the advantage of being able to impart high energy only to the crystallization region without excessively changing the temperature of the substrate.

[0004] Generally, pulsed lasers such as excimer lasers are used as laser beams for laser annealing. As the laser is used for a longer time, the oscillation efficiency of the pulses decreases, causing uneven oscillation energy, which may reduce the uniformity of the beam shape. Summary of the invention

[0005] An object of the present disclosure is to provide a laser crystallization apparatus with improved reliability.

[0006] A laser crystallization device according to an embodiment of the present disclosure may include a light source unit, a first optical unit, a second optical unit, a blocking unit, a third optical unit, and a workbench. The light source unit may emit a first laser beam. The first optical unit may change the path and size of the first laser beam and convert the first laser beam into a second laser beam. The second optical unit may split the second laser beam and convert it into a split laser beam. The split laser beams include a central laser beam and a peripheral laser beam surrounding the central laser beam, and the blocking unit may block at least a portion of the central laser beam. The third optical unit may change the path of the laser beam passing through the blocking unit in the split laser beams and convert the laser beam into a third laser beam. The workbench may be arranged relative to the third optical unit. The first optical unit may change the path and size of the first laser beam based on the third laser beam irradiated on the workbench.

[0007] The first optical part may include a first long focal length lens and a second long focal length lens. The first long focal length lens may be arranged between the light source part and the second optical part. The second long focal length lens may be arranged between the first long focal length lens and the second optical part.

[0008] The second optical part may include a first lens array and a second lens array. The first lens array may be arranged between the first optical part and the blocking part and include a plurality of first lenses. The second lens array may be arranged between the first lens array and the blocking part and include a plurality of second lenses.

[0009] The blocking portion may be disposed between the second optical portion and the third optical portion, and disposed closer to the third optical portion than the second optical portion.

[0010] It may be that the blocking portion includes: a base portion; an inverting portion arranged on the base portion; and a beam blocking portion combined with the inverting portion.

[0011] The beam blocking portion may be arranged in a first state or a second state through the inversion portion, wherein the first state is a state in which the beam blocking portion blocks a portion of the central laser beam, and the second state is a state in which the beam blocking portion does not block the central laser beam.

[0012] It may be that the peripheral laser beam includes a first peripheral laser beam separated along a first direction with the central laser beam placed in the middle and a second peripheral laser beam separated along a second direction intersecting the first direction with the central laser beam placed in the middle, a first distance between the first peripheral laser beams separated along the first direction is greater than a second distance between the second peripheral laser beams separated along the second direction, and the beam blocking portion also blocks the first peripheral laser beam.

[0013] It may be that the peripheral laser beam includes a first peripheral laser beam separated along a first direction with the central laser beam placed in the middle and a second peripheral laser beam separated along a second direction intersecting the first direction with the central laser beam placed in the middle, a first distance between the first peripheral laser beams separated along the first direction is greater than a second distance between the second peripheral laser beams separated along the second direction, and the beam blocking portion also blocks the second peripheral laser beam.

[0014] The beam blocking portion is movable along a direction in which the base portion extends.

[0015] The blocking portion may include: a base portion; a first inversion portion arranged on the base portion; a first beam blocking portion combined with the first inversion portion; a second inversion portion arranged apart from the first inversion portion; and a second beam blocking portion combined with the second inversion portion.

[0016] It may be that the first beam blocking portion can be arranged in a first state or a second state through the first inversion portion, the first state is a state in which the first beam blocking portion blocks a part of the central laser beam, and the second state is a state in which the first beam blocking portion does not block the central laser beam.

[0017] It may be that the second beam blocking portion can be arranged in a third state or a fourth state through the second inversion portion, the third state is a state in which the second beam blocking portion blocks a part of the central laser beam, and the fourth state is a state in which the second beam blocking portion does not block the central beam.

[0018] The third optical part may include a first condensing lens disposed between the second optical part and the workbench, and a second condensing lens disposed between the first condensing lens and the workbench.

[0019] The worktable may include a mounting area for mounting a substrate and a peripheral area around the mounting area, and a hole for injecting the third laser beam is defined in the mounting area.

[0020] The workbench may include a mounting area for mounting a substrate and a peripheral area around the mounting area, and a hole through which the third laser beam is incident is defined in the peripheral area.

[0021] The method may further include a measuring unit arranged opposite to the workbench.

[0022] According to an embodiment of the present disclosure, a laser crystallization device may include a light source unit, a first optical unit, a second optical unit, a blocking unit, a third optical unit, a workbench, and a measuring unit. The light source unit may emit a first laser beam. The first optical unit may change the path and size of the first laser beam to convert the first laser beam into a second laser beam, and includes a first long focal length lens and a second long focal length lens. The second optical unit may split the second laser beam and convert it into a split laser beam. The blocking unit may block at least a portion of the split laser beam. The third optical unit may change the path of the laser beam passing through the blocking unit in the split laser beam and convert the laser beam into a third laser beam. The workbench may be arranged relative to the third optical unit. The measuring unit may be arranged relative to the workbench. The position of the first long focal length lens and the position of the second long focal length lens may be changed based on the third laser beam irradiated on the measuring unit.

[0023] It may be that the blocking portion includes: a base portion; an inverting portion arranged on the base portion; and a beam blocking portion combined with the inverting portion.

[0024] It may be that the split laser beam includes a central laser beam and a peripheral laser beam surrounding the central laser beam, and the beam blocking portion can be arranged in a first state or a second state through the inversion portion, the first state is a state in which the beam blocking portion blocks a part of the central laser beam, and the second state is a state in which the beam blocking portion does not block the central laser beam.

[0025] The worktable may include a mounting area for mounting a substrate and a peripheral area around the mounting area, and a hole for injecting the third laser beam is defined in the mounting area.

[0026] According to the present disclosure, the laser crystallization device can measure the incident angle that changes according to the uniformity of the laser beam emitted from the light source part through the measuring part. The first optical part can change the path and size of the laser beam emitted based on the incident angle measured in the measuring part. That is, the first optical part can be adjusted to keep the incident angle uniform. Therefore, the laser crystallization device can maintain a constant crystallization uniformity of the substrate. The present disclosure can provide a laser crystallization device with improved reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a cross-sectional view of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0028] Figure 2 is a perspective view showing a part of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0029] Figure 3 is a cross-sectional view showing a portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0030] Figure 4 Detailed description of the invention is given in detail below.

[0031] Figure 5 FIG. 1 is a top view showing a working state of a blocking portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0032] Figure 6 FIG. 1 is a plan view showing an operating state of a measuring unit of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0033] Figure 7 FIG. 1 is a top view showing a working state of a blocking portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0034] Figure 8 FIG. 4 is a top view showing a working state of a first optical part of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0035] Fig. 9is a cross-sectional view of a display panel using a substrate according to an embodiment of the present disclosure.

[0036] Fig.10 FIG. 4 is a top view showing a blocking portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0037] Fig.11 FIG. 4 is a top view showing a blocking portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0038] Fig.12 FIG. 4 is a top view showing a blocking portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0039] Fig.13 FIG. 1 is a plan view showing a measuring section of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0040] Description of Reference Numerals

[0041] LM: Light source part OT: Optical part

[0042] L1: First optical part L2: Second optical part

[0043] L3: Third optical part BB: Blocking part

[0044] ST: workbench CM: measurement unit DETAILED DESCRIPTION

[0045] In this specification, when a certain constituent element (or region, layer, part, etc.) is mentioned as being "on" another constituent element, "connected to" another constituent element, or "combined to" another constituent element, it means that the certain constituent element is directly configured on, connected to, or combined with another constituent element, or a third constituent element may be configured between them.

[0046] The same reference numerals refer to the same components. In addition, in the drawings, the thickness, proportion and size of the components are exaggerated for the purpose of effectively explaining the technical content.

[0047] "And / or" includes more than one combination that can be defined by the related components.

[0048] The terms "first" and "second" may be used to describe a variety of constituent elements, but the above constituent elements are not limited by the above terms. The above terms are only used to distinguish one constituent element from other constituent elements. For example, without departing from the scope of the present disclosure, the first constituent element may be named as the second constituent element, and similarly, the second constituent element may be named as the first constituent element. Except where the context clearly indicates other meanings, a singular expression includes a plural expression.

[0049] In addition, the terms such as "lower", "lower side", "upper", and "upper side" are used to explain the relationship between the components shown in the drawings. The above terms are relative concepts and are explained based on the directions shown in the drawings.

[0050] Unless otherwise defined, all terms (including technical terms and scientific terms) used in this specification have the same meanings as those commonly understood by those skilled in the art to which the present disclosure belongs. In addition, terms that are the same as those defined in commonly used dictionaries should be interpreted as having the same meanings in the context of the relevant technology, unless interpreted as ideal or overly formal meanings, which are clearly defined herein.

[0051] It should be understood that terms such as "including" or "having" are used to specify the existence of features, numbers, steps, actions, constituent elements, parts or combinations thereof recorded in the specification, and should be understood not to exclude the existence or additional possibilities of one or more other features, or numbers, steps, actions, constituent elements, parts or combinations thereof in advance.

[0052] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings.

[0053] Figure 1 is a cross-sectional view of a laser crystallization device according to an embodiment of the present disclosure, Figure 2 is a perspective view showing a part of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0054] Reference Figure 1 and Figure 2 The laser crystallization device LD may include: a light source unit LM, generating a first laser beam LS1; an optical unit OT, converting the first laser beam LS1 into a second laser beam LS2 (refer to Figure 3 ) and a third laser beam LS3; a workbench ST, a loading substrate SUB; and a measuring unit CM.

[0055] The light source unit LM may be a device that generates oscillation of the raw first laser beam LS1. For example, the light source unit LM may include an oscillator. The first laser beam LS1 may include an excimer laser, a yttrium aluminum garnet (YAG) laser, a glass laser, a yttrium orthovanadate (YVO4) laser, or an argon (Ar) laser.

[0056] The optical part OT may be disposed in a direction in which the light source part LM irradiates the first laser beam LS1 . The optical part OT may process the first laser beam LS1 into a third laser beam LS3 having a shape and energy density suitable for crystallization of the substrate SUB.

[0057] The third laser beam LS3 may be output in the shape of a rectangular quadrilateral so as to be uniformly irradiated on the substrate SUB. The short side direction of the rectangular quadrilateral may be defined as a short axis, and the long side direction may be defined as a long axis. The short axis may extend along a first direction DR1. The long axis may extend along a second direction DR2 intersecting the first direction DR1. The third laser beam LS3 may be irradiated on the substrate SUB along the third direction DR3. The third laser beam LS3 irradiates the substrate SUB and may guide the phase change of the thin film arranged on the substrate SUB. For example, the third laser beam LS3 may crystallize the first thin film SUB-1 formed on the substrate SUB and change it into the second thin film SUB-2.

[0058] On the other hand, the directions indicated by the first direction DR1, the second direction DR2, and the third direction DR3 are relative concepts and can be converted into other directions. Hereinafter, the first direction to the third direction are the directions indicated by the first direction DR1, the second direction DR2, and the third direction DR3, respectively, and refer to the same reference numerals. In addition, in this specification, the surface defined by the first direction DR1 and the second direction DR2 is defined as a plane, and "observation on a plane" can be defined as observation in the third direction DR3.

[0059] The third direction DR3 may be a direction crossing the first direction DR1 and the second direction DR2. The first direction DR1, the second direction DR2, and the third direction DR3 may be orthogonal to each other.

[0060] The substrate SUB may include a glass substrate or a silicon substrate. However, this is only exemplary, and the substrate SUB may include a variety of substrates. For example, the substrate SUB may include a silicon-germanium substrate. A first thin film SUB-1 and a second thin film SUB-2 may be disposed on the substrate SUB.

[0061] The first film SUB-1 may be an area that is not irradiated by the third laser beam LS3. The first film SUB-1 may be an amorphous silicon film. The first film SUB-1 may be formed by low-pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition, plasma enhanced chemical vapor deposition (PECVD), spraying, vacuum evaporation, and the like.

[0062] The second film SUB-2 may be the area irradiated by the third laser beam LS3. The second film SUB-2 may be a polycrystalline silicon film. The second film SUB-2 may be a film that is irradiated by the third laser beam LS3 for a few nanoseconds to crystallize the first film SUB-1, causing the temperature of the first film SUB-1 to rise sharply, and then cooled to melt and recrystallize the first film SUB-1. The polycrystalline silicon film may include polycrystalline silicon (Po-Si), which has a field-effect mobility that is hundreds of times higher than that of amorphous silicon, and has excellent high signal processing capabilities at high frequencies, so it can be used in display devices such as organic light-emitting display devices.

[0063] The workbench ST may be arranged opposite to the optical part OT. A substrate SUB may be mounted on the workbench ST. The workbench ST moves the substrate SUB in a certain direction along the arrow direction, so that the third laser beam LS3 may be uniformly irradiated on the first film SUB-1 on the substrate SUB. The arrow direction may be the first direction DR1.

[0064] The measuring part CM may be arranged opposite to the worktable ST. The measuring part CM may be arranged in the direction in which the third laser beam LS3 extends. The measuring part CM may measure the length of the area irradiated by the third laser beam LS3. For example, the measuring part CM may measure the lengths of the short axis and the long axis of the third laser beam LS3.

[0065] Figure 3 is a cross-sectional view showing a portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0066] Reference Figure 3 The laser crystallization device LD may include a light source unit LM, an optical unit OT, a worktable ST, and a measuring unit CM.

[0067] The light source unit LM may emit a first laser beam LS1. The first laser beam LS1 may have an energy density of Gaussian distribution. For example, the energy density of the first laser beam LS1 may be higher in the center than in the peripheral portion.

[0068] The optical portion OT may include a first optical portion L1 , a second optical portion L2 , a blocking portion BB, and a third optical portion L3 .

[0069] The first optical part L1 may be arranged opposite to the light source part LM. The first optical part L1 may change the path and size of the first laser beam LS1, thereby converting the first laser beam LS1 into the second laser beam LS2. For example, the first optical part L1 may expand the first laser beam LS1 along the short axis direction or the long axis direction to increase the magnification.

[0070] The first optical part L1 may include a first telephoto lens TL1 and a second telephoto lens TL2 .

[0071] The first telephoto lens TL1 may be disposed between the light source part LM and the second optical part L2. The first telephoto lens TL1 may disperse the first laser beam LS1. The first laser beam LS1 passing through the first telephoto lens TL1 may be dispersed and may have various directivities. The first laser beam LS1 passing through the first telephoto lens TL1 may include a laser beam traveling in the same direction as the first laser beam LS1. The first telephoto lens TL1 may include a concave lens or a convex lens.

[0072] The second telephoto lens TL2 may be disposed between the first telephoto lens TL1 and the second optical part L2. The second telephoto lens TL2 may convert the first laser beam LS1 passing through the first telephoto lens TL1 into a second laser beam LS2 having a certain directivity. The second telephoto lens TL2 may include a concave lens or a convex lens.

[0073] The second optical part L2 may be disposed opposite to the first optical part L1. The second optical part L2 may split the second laser beam LS2 and convert it into split laser beams DL. For example, the second optical part L2 may make the second laser beam LS2 uniform and uniformly distribute the beam energy density.

[0074] The second optical part L2 may include a first lens array HL1 and a second lens array HL2.

[0075] The first lens array HL1 may be arranged between the first optical portion L1 and the blocking portion BB. The first lens array HL1 may include a plurality of first lenses HL1a. The plurality of first lenses HL1a may be arranged along the first direction DR1 and the second direction DR2, respectively. For example, the plurality of first lenses HL1a may be arranged along the short axis direction and the long axis direction, respectively. The plurality of first lenses HL1a may include spherical lenses or aspherical lenses, respectively. The second laser beam LS2 incident on the first lens array HL1 may be refracted by the plurality of first lenses HL1a, respectively, and split into sub-laser beams. The sub-laser beams may be incident on the second lens array HL2.

[0076] The second lens array HL2 may be arranged between the first lens array HL1 and the blocking portion BB. The second lens array HL2 may include a plurality of second lenses HL2a. The plurality of second lenses HL2a may be arranged along the first direction DR1 and the second direction DR2, respectively. For example, the plurality of second lenses HL2a may be arranged along the short axis direction and the long axis direction, respectively. The plurality of second lenses HL2a may include spherical lenses or aspherical lenses, respectively. The number of the plurality of second lenses HL2a may be the same as the number of the plurality of first lenses HL1a. The sub-laser beam incident on the second lens array HL2 is refracted by each of the plurality of second lenses HL2a and split into split laser beams DL. The split laser beams DL may be incident on the third optical portion L3.

[0077] The blocking portion BB may be arranged between the second optical portion L2 and the third optical portion L3. The blocking portion BB may be arranged to be closer to the third optical portion L3 than the second optical portion L2. The split laser beam DL may include a central laser beam and a peripheral laser beam surrounding the central laser beam. The blocking portion BB may block at least a portion of the central laser beam. The blocking portion BB may not block at least a portion of the beam at the end portion of the short axis and the beam at the end portion of the long axis of the split laser beam DL.

[0078] The third optical portion L3 may be arranged opposite to the second optical portion L2. The third optical portion L3 may change the path of the split laser beam DL and convert the split laser beam DL into the third laser beam LS3. For example, the third optical portion L3 may change the path of the laser beam passing through the blocking portion BB in the split laser beam DL and convert the laser beam into the third laser beam LS3.

[0079] The third optical part L3 may include a first condensing lens CL1 and a second condensing lens CL2.

[0080] The first condensing lens CL1 may be disposed between the second optical portion L2 and the workbench ST. The second condensing lens CL2 may be disposed between the first condensing lens CL1 and the workbench ST. The first condensing lens CL1 and the second condensing lens CL2 may convert the split laser beam DL diffused along the short axis direction and the long axis direction into a third laser beam LS3 having uniform energy density along the short axis direction and the long axis direction.

[0081] The third laser beam LS3 may be irradiated on the substrate SUB (refer to Figure 1 The third laser beam LS3 may be irradiated onto the substrate SUB at an incident angle AG (refer to Figure 1 )superior.

[0082] As the laser usage time of the light source unit LM increases, the oscillation efficiency of the pulse decreases, causing uneven oscillation energy and reducing the uniformity of the first laser beam LS1. The incident angle AG of the third laser beam LS3 can be changed according to the uniformity of the first laser beam LS1 emitted from the light source unit LM. According to an embodiment of the present disclosure, the laser crystallization device LD can measure the incident angle AG through the measuring unit CM, and the first optical unit L1 can change the path and size of the first laser beam LS1 based on the incident angle AG. Therefore, the laser crystallization device LD can adjust the first optical unit L1 to keep the incident angle AG uniform. Therefore, the laser crystallization device LD can maintain a constant crystallization uniformity. As a result, a laser crystallization device LD with improved reliability can be provided.

[0083] Figure 4 is a flow chart showing the working method of the laser crystallization device according to one embodiment of the present disclosure, Figure 5 FIG. 1 is a top view showing a working state of a blocking portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0084] Reference Figures 3 to 5 The operation of the laser crystallization apparatus LD may include a step of maintaining the incident angle AG uniform between the first substrate crystallization step T1 and the second substrate crystallization step T7.

[0085] The light source LM may emit the first laser beam LS1 (T2). The blocking portion BB may be in the first state (T3). The blocking portion BB may block a portion of the split laser beam DL to facilitate measurement of the incident angle AG. The blocking portion BB may include a base portion BS, an inverting portion FL, and a beam blocking portion BK.

[0086] The inversion part FL may be arranged on the base part BS. The beam blocking part BK may be combined with the inversion part FL. The beam blocking part BK may be arranged in a first state by the inversion part FL. The first state may be that the beam blocking part BK is in the split laser beam DL (refer to Figure 3 ) and a peripheral laser beam surrounding the central laser beam, which blocks a portion of the central laser beam. The split laser beams DL may be incident along a third direction DR3.

[0087] The peripheral laser beams may include first peripheral laser beams DLS-1 spaced apart in a first direction DR1 with the central laser beam positioned in the middle and second peripheral laser beams DLS-2 spaced apart in a second direction DR2 with the central laser beam positioned in the middle. A first distance between the first peripheral laser beams DLS-1 may be greater than a second distance between the second peripheral laser beams DLS-2.

[0088] The blocking portion BB allows the first peripheral laser beam DLS- 1 to pass therethrough, thereby making it easy to measure the incident angle AG formed on the long axis of the third laser beam LS3 .

[0089] The blocking portion BB allows the second peripheral laser beam DLS-2 to pass through, making it easy to measure the third laser beam LS3 (refer to Figure 3 ) forms an incident angle AG on the short axis.

[0090] Figure 6 FIG. 1 is a plan view showing an operating state of a measuring unit of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0091] Reference Figure 4 and Figure 6 , the measuring unit CM can measure the incident angle AG-1 (T4).

[0092] The substrate SUB may be arranged on the workbench ST. The workbench ST may include a mounting area AN-1 on which the substrate SUB is mounted and a peripheral area AN-2 around the mounting area AN-1. A hole HA1 for incident on the third laser beam LS3 may be defined in the mounting area AN-1. On a plane, the substrate SUB may overlap with the hole HA1. The third laser beam LS3 may be incident at an incident angle AG-1. The measuring unit CM may be arranged under the workbench ST. The measuring unit CM may measure the third laser beam LS3. For example, the measuring unit CM may measure the length A1 of the short axis or the long axis of the area formed by the incidence of the third laser beam LS3. The measuring unit CM may measure the length A2 from the vertical downward position of the point where the third laser beam LS3 intersects to the position where the third laser beam LS3 is incident.

[0093] The measuring unit CM may provide the two measured lengths A1 and A2 to the control unit CU. The control unit CU may calculate the incident angle AG-1. The incident angle AG-1 may be expressed by the following mathematical formula 1.

[0094] [Mathematical formula 1]

[0095] AG-1=sin -1 ((A1 / ((A2 2 +A3 2 ) 1 / 2 ))*(A3 / ((A1+A2) 2 +A3 2 ) 1 / 2 ))

[0096] The control unit CU may calculate the incident angle AG-1 using the two lengths A1 and A2 and the length A3 measured in the measuring unit CM. The length A3 may be the distance between the point where the third laser beam LS3 intersects and the measuring unit CM. The control unit CU may determine whether the calculated incident angles AG-1 of the major axis and the minor axis are the same as the incident angles of the major axis and the minor axis measured before the first substrate crystallization step T1 (T5).

[0097] According to the present disclosure, the laser crystallization device LD (refer to Figure 3 ) can calculate the incident angle AG and keep it uniform. Therefore, the laser crystallization device LD (refer to Figure 3 ) can maintain a constant crystal uniformity of the substrate SUB. The present disclosure can provide a laser crystallization device LD with improved reliability (refer to Figure 3 ).

[0098] Figure 7 FIG. 1 is a top view showing a working state of a blocking portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0099] Reference Figure 4 and Figure 7 , laser crystallization device LD (refer to Figure 3 ) is determined to be the incident angle AG-1 (refer to Figure 6 ) is the same as the incident angle measured before the first substrate crystallization step T1 (T5), the blocking part BB can be arranged in the second state (T6). The beam blocking part BK can be arranged in the second state by the inverting part FL. The second state can be a state in which the beam blocking part BK does not block the central laser beam included in the split laser beam DL and the peripheral laser beam surrounding the central laser beam. For example, the second state can be a state in which the split laser beam DL is not blocked by the blocking part BB. The split laser beam DL can be incident along the third direction DR3.

[0100] The laser crystallization device LD can be used at an incident angle AG-1 (refer to Figure 6 ) is performed when the incident angle is the same as that measured before the first substrate crystallization step T1.

[0101] According to the present disclosure, the laser crystallization device LD (refer to Figure 3 ) can maintain the crystal uniformity of the first substrate and the second substrate at a certain level. The present disclosure can provide a laser crystallization device LD with improved reliability (refer to Figure 3 ).

[0102] Figure 8 FIG. 4 is a top view showing a working state of a first optical part of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0103] Reference Figure 4 and Figure 8 , laser crystallization device LD (refer to Figure 3 ) is determined to be the incident angle AG-1 (refer to Figure 6) is different from the incident angle measured before the first substrate crystallization step T1 (T5), the first optical part L1 can be controlled (T8). The control unit CU can be connected to the first optical part L1 to control the first optical part L1. For example, the control unit CU can be connected to the first telephoto lens TL1 and the second telephoto lens TL2 respectively to control the first telephoto lens TL1 and the second telephoto lens TL2 respectively.

[0104] The first telephoto lens TL1 may move along the first direction DR1, the second direction DR2, and the third direction DR3. The second telephoto lens TL2 may move along the first direction DR1, the second direction DR2, and the third direction DR3.

[0105] The incident angle AG-1 calculated by the control unit CU (refer to Figure 6 ) may be different from the incident angle measured before the first substrate crystallization step T1. According to the present disclosure, the control unit CU can change the path and size of the first laser beam LS1 to control the first optical part L1 to emit the second laser beam LS2. The control unit CU can adjust the path and size of the first laser beam LS1 so that the incident angles AG-1 (refer to Figure 6 ) is kept the same as the incident angles of the major axis and the minor axis measured before the first substrate crystallization step T1. Figure 3 ) can maintain a constant crystal uniformity of the substrate. The present disclosure can provide a laser crystallization device LD with improved reliability (refer to Figure 3 ).

[0106] Fig. 9 is a cross-sectional view of a display panel using a substrate according to an embodiment of the present disclosure.

[0107] Reference Fig. 9 The substrate SUB may be made of glass material. However, the substrate SUB is not limited thereto and may be made of plastic material.

[0108] The buffer film BFL forms a smooth surface on the substrate SUB, which can block the flow of the first film SUB-1 (see Figure 1 ) to penetrate impurity elements. In one embodiment of the present disclosure, the buffer film BFL may be selectively arranged / omitted.

[0109] A first thin film SUB-1 (see Figure 1 ). Laser crystallization device LD (refer to Figure 3 ) can be applied to the first film SUB-1 (refer to Figure 1 ) provides laser light to form a second thin film SUB-2 as a polysilicon layer (refer to Figure 1 ). The second film SUB-2 (refer to Figure 1) can be used as a semiconductor layer.

[0110] In the present embodiment, the circuit element layer ML may include the buffer film BFL, the first intermediate inorganic film 10 and the second intermediate inorganic film 20 as inorganic films, and the intermediate organic film 30 as an organic film. The materials of the inorganic film and the organic film are not particularly limited.

[0111] A first semiconductor pattern OSP1 of the first transistor TR1 and a second semiconductor pattern OSP2 of the second transistor TR2 may be disposed on the buffer film BFL. The first semiconductor pattern OSP1 and the second semiconductor pattern OSP2 may be polysilicon.

[0112] A first intermediate inorganic film 10 may be disposed on the first semiconductor pattern OSP1 and the second semiconductor pattern OSP2 . A first control electrode GE1 of the first transistor TR1 and a second control electrode GE2 of the second transistor TR2 may be disposed on the first intermediate inorganic film 10 .

[0113] A second intermediate inorganic film 20 covering the first and second control electrodes GE1 and GE2 may be disposed on the first intermediate inorganic film 10. The first input electrode DE1 and the first output electrode SE1 of the first transistor TR1 and the second input electrode DE2 and the second output electrode SE2 of the second transistor TR2 may be disposed on the second intermediate inorganic film 20.

[0114] The first input electrode DE1 and the first output electrode SE1 may be connected to the first semiconductor pattern OSP1 through the first through hole CH1 and the second through hole CH2 penetrating the first intermediate inorganic film 10 and the second intermediate inorganic film 20, respectively. The second input electrode DE2 and the second output electrode SE2 may be connected to the second semiconductor pattern OSP2 through the third through hole CH3 and the fourth through hole CH4 penetrating the first intermediate inorganic film 10 and the second intermediate inorganic film 20, respectively. On the other hand, in another embodiment of the present disclosure, a portion of the first transistor TR1 and the second transistor TR2 may be transformed into a bottom gate structure for implementation.

[0115] An intermediate organic film 30 covering the first input electrode DE1, the second input electrode DE2, the first output electrode SE1, and the second output electrode SE2 may be disposed on the second intermediate inorganic film 20. The intermediate organic film 30 may provide a flat surface.

[0116] A display element layer IML may be arranged on the intermediate organic film 30. The display element layer IML may include a pixel definition film PDL and an organic light emitting diode OLED. The pixel definition film PDL may include an organic substance. A first electrode AE ​​may be arranged on the intermediate organic film 30. The first electrode AE ​​may be connected to the second output electrode SE2 through a fifth through hole CH5 penetrating the intermediate organic film 30. An opening OP is defined in the pixel definition film PDL. The opening OP of the pixel definition film PDL may expose at least a portion of the first electrode AE. In one embodiment of the present disclosure, the pixel definition film PDL may be omitted.

[0117] In an embodiment of the present disclosure, the light emitting region PXA may overlap at least one of the first transistor TR1 and the second transistor TR2. The opening OP may be wider, and the first electrode AE ​​and the light emitting layer EML may also be wider.

[0118] The hole control layer HCL may be disposed in the light emitting area PXA and the non-light emitting area NPXA. The light emitting layer EML may be disposed on the hole control layer HCL. The light emitting layer EML may be disposed in an area corresponding to the opening OP. The light emitting layer EML may include an organic substance and / or an inorganic substance. The light emitting layer EML may generate a predetermined colored light.

[0119] The electron control layer ECL may be disposed on the light emitting layer EML. The second electrode CE may be disposed on the electron control layer ECL.

[0120] A thin film encapsulation layer TFE may be arranged on the second electrode CE. The thin film encapsulation layer TFE may cover the second electrode CE. A capping layer covering the second electrode CE may be further arranged between the thin film encapsulation layer TFE and the second electrode CE. In this case, the thin film encapsulation layer TFE may directly cover the capping layer.

[0121] Fig.10 FIG. 4 is a top view showing a blocking portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0122] Reference Fig.10 The blocking portion BB-1 may include a base portion BS-1, a first inverting portion FL1, a first beam blocking portion BK1, a second inverting portion FL2, and a second beam blocking portion BK2.

[0123] The first inversion portion FL1 may be disposed on the base portion BS-1. The first beam blocking portion BK1 may be combined with the first inversion portion FL1. The first beam blocking portion BK1 may be arranged in a third state or a fourth state by the first inversion portion FL1. The third state may be that the first beam blocking portion BK1 is in the split laser beam DL (refer to Figure 3) and the peripheral laser beams surrounding the central laser beam. The fourth state may be a state in which the first beam blocking portion BK1 does not block the central laser beam.

[0124] The second inversion portion FL2 may be arranged on the base portion BS-1. The second inversion portion FL2 may be arranged apart from the first inversion portion FL1 along the first direction DR1. The second beam blocking portion BK2 may be combined with the second inversion portion FL2. The second beam blocking portion BK2 may be arranged in a third state or a fourth state through the second inversion portion FL2. The third state may be a state in which the second beam blocking portion BK2 blocks a portion of the central laser beam. The fourth state may be a state in which the second beam blocking portion BK2 does not block the central laser beam. Split laser beam DL (refer to Figure 3 ) can be incident along the third direction DR3.

[0125] The first inverting portion FL1 and the second inverting portion FL2 may operate independently to adjust the arrangement of the first beam blocking portion BK1 and the second beam blocking portion BK2 , respectively.

[0126] The blocking portion BB-1 allows the first peripheral laser beam DLS-1 to pass through, making it easy to measure the third laser beam LS3 (refer to Figure 3 ) formed on the long axis of the incident angle AG (refer to Figure 3 ).

[0127] The blocking portion BB-1 allows the second peripheral laser beam DLS-2 to pass through, making it easy to measure the third laser beam LS3 (refer to Figure 3 ) formed on the short axis of the incident angle AG (refer to Figure 3 ).

[0128] Fig.11 FIG. 4 is a top view showing a blocking portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0129] Reference Fig.11 The blocking portion BB-2 may include a base portion BS-2, a reversing portion FL-2, and a beam blocking portion BK-2.

[0130] The inversion part FL-2 may be arranged on the base part BS-2. The beam blocking part BK-2 may be combined with the inversion part FL-2. The beam blocking part BK-2 may be arranged in a fifth state or a sixth state by the inversion part FL-2. The fifth state may be that the beam blocking part BK-2 blocks the split laser beam DL (refer to Figure 3 The sixth state may be that the beam blocking portion BK-2 does not block the split laser beam DL (refer to Figure 3 ) status.

[0131] The blocking portion BB-2 can block the first peripheral laser beam DLS-1 (refer to Figure 5 ) and the second peripheral laser beam DLS-2 passes through so that it is easy to measure the third laser beam LS3 (reference Figure 3 ) formed on the short axis of the incident angle AG (refer to Figure 3 ).

[0132] Fig.12 FIG. 4 is a top view showing a blocking portion of a laser crystallization apparatus according to an embodiment of the present disclosure.

[0133] Reference Fig.12 The blocking portion BB-3 may include a base portion BS-3, a reversing portion FL-3 and a beam blocking portion BK-3.

[0134] The inversion part FL-3 may be arranged on the base part BS-3. The beam blocking part BK-3 may be combined with the inversion part FL-3. The beam blocking part BK-3 may be arranged in the seventh state or the eighth state by the inversion part FL-3. The seventh state may be that the beam blocking part BK-3 blocks the split laser beam DL (refer to Figure 3 The eighth state may be that the beam blocking portion BK-3 does not block the split laser beam DL (refer to Figure 3 ) status.

[0135] The blocking portion BB-3 allows the first peripheral laser beam DLS-1 to pass through and blocks the second peripheral laser beam DLS-2 (see Figure 5 ) makes it easy to measure the third laser beam LS3 (refer to Figure 3 ) formed on the long axis of the incident angle AG (refer to Figure 3 ).

[0136] In an embodiment of the present disclosure, the reverse portion FL-3 may move along a direction in which the base portion BS-3 extends. For example, the reverse portion FL-3 may move along a first direction DR1.

[0137] The beam blocking portion BK-3 can also move along the first direction DR1 to block the left peripheral laser beam DLS-11. The blocking portion BB-3 allows the right peripheral laser beam DLS-12 to pass through so that it is easy to measure the third laser beam LS3 (refer to Figure 3 ) on the minor or major axis (refer to Figure 3 ).

[0138] The beam blocking portion BK-3 can also move along the first direction DR1 to block the right peripheral laser beam DLS-12. The blocking portion BB-3 allows the left peripheral laser beam DLS-11 to pass through so that it is easy to measure the third laser beam LS3 (refer to Figure 3 ) on the minor or major axis (refer to Figure 3).

[0139] Fig.13 FIG. 1 is a top view showing a measuring section of a laser crystallization apparatus according to an embodiment of the present disclosure. Figures 1 to 9 The same reference numerals are used to denote the constituent elements described above, and description thereof will be omitted.

[0140] Reference Figure 6 and Fig.13 , the laser crystallization device LD may measure the incident angle AG-1 in the measuring part CM. The worktable ST may include a mounting area AN1 on which the substrate SUB is mounted and a peripheral area AN2 around the mounting area AN1. A hole HA2 may be defined in the peripheral area AN2 for incident the third laser beam LS3. On a plane, the substrate SUB may not overlap with the hole HA2. The third laser beam LS3 may be incident at the incident angle AG-1.

[0141] According to one embodiment of the present disclosure, even in the crystallization step T1 (refer to Figure 4 ) is completed for the crystallization step T7 of the second substrate (refer to Figure 4 ) and the first substrate is removed. Since the third laser beam LS3 is not affected, the measuring unit CM can continue to measure the incident angle AG-1. The laser crystallization device LD can save the time required for the process. Therefore, the laser crystallization device LD can improve the yield and productivity of the crystallization process of the substrate SUB.

[0142] The above description is made with reference to the preferred embodiments of the present disclosure, but a person skilled in the art or a person having common knowledge in the present technical field should understand that various modifications and changes can be made to the present disclosure without departing from the scope of the present disclosure and the technical field. Therefore, the technical scope of the present disclosure should not be limited to the contents described in detail in the specification.

Claims

1. A laser crystallization device, in, include: Light source part: emitting a first laser beam; a first optical part, which changes the path and size of the first laser beam to convert the first laser beam into a second laser beam; a second optical part, which splits the second laser beam and converts it into split laser beams; a blocking portion, wherein the split laser beams include a central laser beam and a peripheral laser beam surrounding the central laser beam, and the blocking portion blocks at least a portion of the central laser beam; a third optical part, which changes the path of the laser beam in the split laser beam passing through the blocking part to convert the laser beam into a third laser beam; a workbench, arranged opposite to the third optical part; as well as A measuring part is arranged opposite to the workbench, The workbench includes a mounting area for mounting a substrate and a peripheral area around the mounting area. A hole is defined in the mounting area or the peripheral area for injecting the third laser beam, The first optical portion changes the path and size of the first laser beam based on the third laser beam irradiated onto the measurement portion through the hole.

2. The laser crystallization device according to claim 1, in, The blocking portion comprises: base; an inversion portion, arranged on the base portion; and The light beam blocking portion is combined with the inverting portion.

3. The laser crystallization device according to claim 2, in, The beam blocking portion can be arranged in a first state or a second state by the inverting portion. The first state is a state in which the beam blocking portion blocks a part of the central laser beam, and the second state is a state in which the beam blocking portion does not block the central laser beam.

4. The laser crystallization device according to claim 3, in, The peripheral laser beams include a first peripheral laser beam spaced along a first direction with the central laser beam placed in the middle, and a second peripheral laser beam spaced along a second direction intersecting the first direction with the central laser beam placed in the middle. a first distance between the first peripheral laser beams spaced apart along the first direction is greater than a second distance between the second peripheral laser beams spaced apart along the second direction, The beam blocking portion also blocks the first peripheral laser beam.

5. The laser crystallization device according to claim 2, in, The peripheral laser beams include a first peripheral laser beam spaced along a first direction with the central laser beam placed in the middle, and a second peripheral laser beam spaced along a second direction intersecting the first direction with the central laser beam placed in the middle. a first distance between the first peripheral laser beams spaced apart along the first direction is greater than a second distance between the second peripheral laser beams spaced apart along the second direction, The beam blocking portion also blocks the second peripheral laser beam.

6. The laser crystallization device according to claim 1, in, The blocking portion comprises: base; A first inverting portion, arranged on the base portion; a first beam blocking portion, combined with the first inverting portion; a second inverting portion, arranged apart from the first inverting portion; and The second beam blocking portion is combined with the second inverting portion.

7. The laser crystallization device according to claim 6, in, The first beam blocking portion can be arranged in a first state or a second state through the first inverting portion. The first state is a state in which the first beam blocking portion blocks a part of the central laser beam, and the second state is a state in which the first beam blocking portion does not block the central laser beam.

8. The laser crystallization device according to claim 6, in, The second beam blocking portion can be arranged in a third state or a fourth state through the second inverting portion, the third state is a state in which the second beam blocking portion blocks a part of the central laser beam, and the fourth state is a state in which the second beam blocking portion does not block the central laser beam.

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