Deposition equipment and deposition method, and method for determining temperature detection points in deposition equipment

Abstract

An embodiment of the present application provides a deposition device and a deposition method, as well as a method for determining a temperature detection point in the deposition device. The deposition device includes: a shell, a heating device located in a deposition chamber of the shell, a carrier, and a temperature detection device located outside the shell, wherein the heating device is used to heat the carrier so as to heat the substrate through the carrier. The deposition chamber is divided into M nested temperature fields along a preset direction. The temperature detection device includes a plurality of temperature detection elements. The temperature detection elements correspond to the temperature fields one by one and are used to detect the temperature of the corresponding temperature fields. Thus, by obtaining the temperature of the corresponding temperature fields detected by each temperature detection element, the heating device can be controlled so that the temperature of each temperature field is the same or within a certain error range, so as to improve the temperature uniformity of the M temperature fields, thereby improving the wavelength uniformity during the growth of the epitaxial structure in the LED.

Description

Technical Field

[0001] The present application relates to the technical field of LED manufacturing, and in particular to a deposition device and a deposition method using the deposition device, as well as a method for determining a temperature detection point in a deposition device. Background Art

[0002] In the production process of LED epitaxial wafers, the requirements for wavelength uniformity have always been very high, which can not only improve the yield of products, but also reduce the cost of sorting, thereby increasing the profit of LEDs. Therefore, the wavelength uniformity from the inside to the outside of the LED epitaxial wafer production process and the wavelength uniformity within the LED epitaxial structure have always been parameters that the epitaxial structure manufacturing department has long monitored and improved. Under this premise, how to improve the wavelength uniformity during the growth process of the epitaxial structure in LEDs has become a research hotspot for technicians in this field. Summary of the invention

[0003] In view of this, an embodiment of the present application provides a deposition device and a deposition method thereof, as well as a method for determining a temperature detection point in a deposition device, so as to improve the wavelength uniformity during the growth process of an epitaxial structure in an LED.

[0004] To achieve the above objectives, this application provides the following technical solutions:

[0005] A deposition device comprising:

[0006] a housing having a deposition chamber;

[0007] a heating device located in the deposition chamber;

[0008] A carrier plate located above the heating device, wherein a surface of the carrier plate facing away from the heating device is used for placing a substrate, and the heating device is used for heating the carrier plate so as to heat the substrate through the carrier plate;

[0009] a temperature detection device located outside the housing, the temperature detection device being located on a side of the carrier away from the heating device and used for detecting the temperature in the deposition chamber;

[0010] Among them, the deposition chamber is divided into M temperature fields along a preset direction, the M temperature fields are nested and distributed, and M is an integer greater than 1; the temperature detection device includes multiple temperature detection elements, and the temperature detection elements correspond one-to-one to the temperature fields and are used to detect the temperature of the corresponding temperature fields.

[0011] Optionally, the diameter of the carrier is X mm, and the distance A1 from the first temperature detection element to the center of the carrier is in the range of 0.04X to 0.1X, including endpoint values;

[0012] The distance An from the nth temperature detection element to the center of the carrier plate ranges from 1.5nA1 to 4nA1, including the endpoint values;

[0013] The distance A from the nth temperature detection element to the center of the carrier n Greater than the distance A from the n-1th temperature detection element to the center of the carrier n-1 , n is an integer greater than 1 and not greater than M.

[0014] Optionally, a slide groove extending along the radial direction of the carrier plate is provided on the side of the shell facing the temperature detection device, and the temperature detection element is fixed in the slide groove by a fixing device.

[0015] Optionally, the fixing device comprises:

[0016] A fixing bracket, wherein a first end of the fixing bracket fixes the temperature detection element;

[0017] a fixing member located at the second end of the fixing bracket, the fixing member comprising a first fixing member and a second fixing member;

[0018] a control button located on the fixing bracket, wherein when the control button is triggered, the fixing device switches between a first state and a second state;

[0019] The fixing member has a through hole that penetrates the fixing bracket along a first direction. In the first state, the first fixing member and the second fixing member are located in the through hole, and the fixing device is separated from the slide groove of the shell. In the second state, the first fixing member and the second fixing member extend from the through hole, and the fixing device is fixedly connected to the slide groove of the shell.

[0020] Optionally, the control button includes a first button and a second button, and when the first button is triggered, the fixing device switches from the first state to the second state, and when the second button is triggered, the fixing device switches from the second state to the first state.

[0021] Optionally, the slide groove has a positioning mark.

[0022] Optionally, the shell has a light-transmitting area on one side facing the temperature detection device, and the temperature detection element emits light into the deposition chamber of the deposition equipment through the light-transmitting area, and receives light reflected in the deposition chamber, so as to detect the temperature of the corresponding temperature field based on the emitted light and the received reflected light.

[0023] Optionally, the M temperature fields include a first temperature field, a second temperature field and a third temperature field, the second temperature field surrounds the first temperature field, and the third temperature field surrounds the second temperature field;

[0024] The heating device comprises a first heating element, a second heating element and a third heating element, wherein the first heating element is used to heat the first area of ​​the first temperature field, the second heating element is used to heat the second area of ​​the first temperature field, the second temperature field and the first area of ​​the third temperature field, and the third heating element is used to heat the second area of ​​the third temperature field;

[0025] Among them, the first area of ​​the first temperature field is the area within 1 / 3 radius of the first temperature field, and the second area of ​​the first temperature field is the area from 1 / 3 radius of the first temperature field to the boundary line between the first temperature field and the second temperature field; the first area of ​​the third temperature field is the area from the boundary line between the second temperature field and the third temperature field to the 2 / 3 boundary line of the third temperature field, and the second area of ​​the third temperature field is the remaining 1 / 3 area of ​​the third temperature field.

[0026] A deposition method, applied to any of the above deposition devices, the method comprising:

[0027] placing the substrate on a carrier surface in a deposition chamber of a deposition device;

[0028] Turning on a heating device below the carrier to heat the carrier, so as to heat the substrate through the carrier;

[0029] Acquiring the temperature of each temperature detection element in the temperature detection device outside the deposition shell, and controlling each heating element in the heating device based on each temperature detection element so that the temperature detected by each temperature detection element meets a preset condition;

[0030] When the temperature detected by the temperature detection element meets a preset condition, an epitaxial structure is deposited on the surface of the substrate.

[0031] A method for determining a temperature detection point in a deposition device, comprising:

[0032] Dividing a deposition chamber of the deposition device into M temperature fields, and heating the M temperature fields;

[0033] Detecting the temperature of each temperature field by each temperature detection element corresponding to the M temperature fields, and obtaining the wavelength of the epitaxial structure deposited on the substrate in the deposition device when the temperature of the M temperature fields meets a preset condition at each detection position;

[0034] The detection position of each of the temperature detection elements is determined based on the wavelength of the epitaxial structure deposited on the substrate in the deposition device when the temperatures of the M temperature fields at each detection position meet a preset condition.

[0035] The deposition device provided in the embodiment of the present application includes: a shell, a heating device and a carrier located in a deposition chamber of the shell, and a temperature detection device located outside the shell, wherein the heating device is used to heat the carrier so as to heat the substrate through the carrier, the deposition chamber is divided into M temperature fields along a preset direction, and the M temperature fields are nested and distributed, and the temperature detection device includes a plurality of temperature detection elements, and the temperature detection elements correspond to the temperature fields one by one and are used to detect the temperature of the corresponding temperature fields, so that the heating device can be controlled by obtaining the temperature of the corresponding temperature field detected by each temperature detection element in the temperature detection device located outside the shell, so that the temperature of each temperature field is the same or within a certain error range, so as to improve the temperature uniformity of the M temperature fields, thereby improving the wavelength uniformity during the growth of the epitaxial structure in the LED. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0037] Figure 1 A schematic diagram of the structure of a deposition device provided in one embodiment of the present application;

[0038] Figure 2 and Figure 3 A schematic diagram of the structure of a temperature detection element and a fixing device in a deposition device provided in one embodiment of the present application;

[0039] Figure 4 A schematic diagram of a positioning mark in a deposition device provided in one embodiment of the present application;

[0040] Figure 5 A schematic diagram of the structure of a chute in a deposition device provided in another embodiment of the present application;

[0041] Figure 6 In a deposition device provided in one embodiment of the present application, a temperature variation curve diagram of each position in the first temperature field to the third temperature field;

[0042] Figure 7 For Figure 6 Schematic diagram of wavelength curve of epitaxial structure of LED grown in corresponding temperature field;

[0043] Figure 8 For comparison of the temperature variation curves at various positions in the first temperature field to the third temperature field in the deposition equipment;

[0044] Fig. 9 For Figure 8 Schematic diagram of wavelength curve of epitaxial structure of LED grown in corresponding temperature field;

[0045] Fig.10 A flow chart of a deposition method provided by one embodiment of the present application. DETAILED DESCRIPTION

[0046] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0047] In the following description, many specific details are set forth to facilitate a full understanding of the present application, but the present application may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0048] As described in the background technology section, how to improve the wavelength uniformity during the growth of the epitaxial structure in the LED has become a research hotspot for those skilled in the art.

[0049] The inventors have found that in the actual production process, especially when growing epitaxial structures in a large cavity, when the substrate is placed on a carrier and heated by a heating system under the carrier, if the carrier rotates at a high speed, part of the substrate will warp up under the centrifugal force of the high speed, resulting in inconsistent heating temperatures received by the warped area and the non-warped area of ​​the substrate, thereby causing an uneven temperature field in different areas above the substrate, causing the wavelength to be longer at the inner position of the outer circle in the epitaxial structure on the surface of the substrate, thereby affecting the wavelength uniformity of the LED epitaxial structure.

[0050] Based on this, an embodiment of the present application provides a deposition device and a deposition method thereof, as well as a method for determining temperature detection points in a deposition device, so as to improve the temperature uniformity of the M temperature fields, thereby improving the wavelength uniformity during the growth process of the epitaxial structure in the LED. The deposition device and a deposition method thereof, as well as a method for determining temperature detection points in a deposition device provided in an embodiment of the present application are described below in conjunction with the accompanying drawings.

[0051] like Figure 1As shown, the deposition device provided by the embodiment of the present application includes: a shell 1, the shell 1 having a deposition chamber 2; a heating device 3 located in the deposition chamber 2; a carrier 4 located above the heating device 3, the surface of the carrier 4 facing away from the heating device 3 is used for placing a substrate, the heating device 3 is used to heat the carrier 4, so as to heat the substrate through the carrier 4; a temperature detection device 200 located outside the shell 1, the temperature detection device 200 is located on the side of the carrier 4 facing away from the heating device 3, and is used to detect the temperature in the deposition chamber 2, wherein the deposition chamber 2 is divided into M temperature fields along a preset direction, the M temperature fields are nested and distributed, M is an integer greater than 1, and the temperature detection device 200 includes a plurality of temperature detection elements 20, the temperature detection elements correspond to the temperature fields one by one, and are used to detect the temperature of the corresponding temperature fields.

[0052] The deposition device provided in the embodiment of the present application includes a heating device and a carrier located in the deposition chamber of the shell and a temperature detection device located outside the shell, so that when the substrate located on the carrier is heated by the heating device through the carrier, the temperature detection elements in the temperature detection device located outside the shell can be used to detect the temperature of different temperature fields in the deposition chamber, and then the heating device can be controlled based on the temperature detected by each temperature detection element, so that the temperature detected by each temperature detection element is the same or within a certain error range, so as to improve the uniformity of the M temperature fields. In addition, since the uniformity of the wavelength during the growth of the epitaxial structure in the LED is closely related to its temperature, the deposition device provided in the embodiment of the present application can improve the uniformity of the wavelength during the growth of the epitaxial structure in the LED located in the deposition chamber after improving the temperature uniformity of each temperature field.

[0053] On the basis of the above-mentioned embodiments, in one embodiment of the present application, the carrier is a graphite disk, but the present application does not limit this. In other embodiments of the present application, the carrier may also be a carrier made of other materials, depending on the specific circumstances.

[0054] It should be noted that, based on the above embodiments, in one embodiment of the present application, the M temperature fields are nested and distributed, that is, in the top view of the M temperature fields, the M temperature fields are nested and distributed. Optionally, in an embodiment of the present application, the shape of the M temperature fields can match the substrate. For example, when the substrate is circular, the top view shape of each of the M temperature fields is circular, and when the substrate is square, the top view shape of each of the M temperature fields is square. The present application does not limit this, and it depends on the specific circumstances.

[0055] On the basis of the above embodiments, in one embodiment of the present application, the diameter of the carrier is X mm, the distance A1 from the first temperature detection element to the center of the carrier is in the range of 0.04X to 0.1X, including the endpoint values; the distance A1 from the nth temperature detection element to the center of the carrier is n The value range is 1.5nA1 to 4nA1, including the endpoint value, so that each temperature detection element is located at the optimal temperature detection point of its corresponding temperature field, thereby improving the temperature uniformity of the M temperature fields when controlling the heating effect of the heating device based on each temperature detection element, wherein the distance A from the nth temperature detection element to the center of the carrier is n Greater than the distance A from the n-1th temperature detection element to the center of the carrier n-1 , n is an integer greater than 1 and not greater than M.

[0056] It should be noted that, in the above embodiment, the M temperature fields are nested and distributed, and the temperature detection elements correspond to the temperature fields one by one. Therefore, in the embodiment of the present application, among the temperature detection elements corresponding to the M temperature fields, the farther the temperature field is from the center of the carrier, the farther the distance between the corresponding temperature detection element and the center of the carrier is.

[0057] Based on the above embodiments, in one embodiment of the present application, Figure 2 and Figure 3 As shown, a slide groove 10 extending along the radial direction of the carrier is provided on the side of the shell facing the temperature detection device, and the temperature detection element 20 is fixed in the slide groove 10 by a fixing device 30 to fix the temperature detection element 20 at the temperature detection position corresponding to the temperature field.

[0058] Specifically, based on the above embodiment, in one embodiment of the present application, the fixing device 30 includes:

[0059] A fixing bracket 31, a first end of which fixes the temperature detection element 20;

[0060] A fixing member 32 located at the second end of the fixing bracket 31, wherein the fixing member 32 includes a first fixing member 321 and a second fixing member 322;

[0061] A control button 33 is located on the fixing bracket 31 . When the control button 33 is triggered, the fixing device 30 switches between the first state and the second state.

[0062] In which, the fixing member 32 has a through hole that penetrates the fixing bracket 31 along a first direction. In the first state, the first fixing member 321 and the second fixing member 322 are located in the through hole, and the fixing device 30 is separated from the slide groove 10 of the shell. In the second state, the first fixing member 321 and the second fixing member 322 extend from the through hole, and the fixing device 30 is fixedly connected to the slide groove 10 of the shell, so that when the fixing device is in the first state, the temperature detection element can move along the extension direction of the slide groove, and when the fixing device is in the second state, the temperature detection element is fixed on the slide groove.

[0063] In specific applications, the control button is first used to control the fixing device to be in the first state, so that the temperature detection element slides along the extension direction of the slide groove to its corresponding optimal detection point, and then the control button is used to control the fixing device to switch to the second state, and the temperature detection element is fixed at its corresponding optimal temperature detection point to improve the uniformity of the M temperature fields, thereby improving the wavelength uniformity during the growth process of the epitaxial structure in the LED.

[0064] Based on the above embodiments, in one embodiment of the present application, continue to refer to Figure 2 , the slide 10 has a card slot 12, when the fixing device 30 and the slide 10 are in the second state, the first fixing member 321 and the second fixing member 322 extend from the through hole and extend into the card slot 12, and the fixing device 30 is fixedly connected to the slide 10 of the shell through the card connection between the first fixing member and the card slot and the card connection between the second fixing member and the card slot, but the present application is not limited to this. In other embodiments of the present application, the first fixing member and the second fixing member can also be fixedly connected to the slide in other ways, depending on the specific situation.

[0065] Based on the above embodiments, in one embodiment of the present application, continue to refer to Figure 3The control button 33 includes a first button 331 and a second button 332. When the first button 331 is triggered, the fixing device 30 switches from the first state to the second state. When the second button 332 is triggered, the fixing device 30 switches from the second state to the first state, so as to control the switching of the fixing device between different states through different buttons. However, the present application is not limited to this. In other embodiments of the present application, the control button may also include only a third button. When the third button is triggered, the fixing device switches from the current state to another state. For example, when the current state of the fixing device is the first state, the third button is triggered, and the fixing device switches from the first state to the second state. When the current state of the fixing device is the second state, the third button is triggered, and the fixing device switches from the second state to the first state, depending on the specific circumstances.

[0066] Based on the above embodiments, in one embodiment of the present application, Figure 4 As shown, Figure 4 The figure shows a partial top view of the deposition device, wherein the slide groove has a plurality of positioning marks 11, which are used to quickly and conveniently move the temperature detection element 20 to the position to be fixed with high accuracy when the temperature detection element 20 moves along the extension direction of the slide groove.

[0067] It should be noted that in one embodiment of the present application, the distance between each two positioning marks may be 10 mm, but the present application is not limited to this. In other embodiments of the present application, the distance between each two positioning marks may also be 5 mm or other values, depending on the specific circumstances.

[0068] In specific application, the second button is first triggered to control the fixing device to be in the first state, so that the fixing device can slide along the extension direction of the slide groove, and then the positioning mark on the slide groove is used to locate the moving position of the fixing device. When the temperature detection element moves to the optimal temperature detection point, the first button is triggered to switch the fixing device from the first state to the second state, and the fixing device is fixed on the slide groove to complete the movement of the position of the temperature detection element.

[0069] It should be noted that, in the above embodiment, the control button can be used to control the fixing device to switch between the first state and the second state, thereby realizing the fixed connection and separation between the fixing device and the slide slot. The operation is simple and convenient, and there is no need to touch or disassemble the temperature detection element. Therefore, there is no need to readjust the detection angle of the temperature detection element when changing the detection position of the temperature detection element, thereby avoiding measurement deviations caused by changes in the detection angle of the temperature detection element, and will not affect the emission and reception of light by the temperature detection element.

[0070] Optionally, in one embodiment of the present application, when the fixing device is in the first state, the temperature detection element is moved by manual adjustment to simplify the structure of the deposition device, but the present application is not limited to this. In other embodiments of the present application, an automatic moving structure may be added to the deposition device, and when the fixing device is in the first state, the temperature detection element is moved by the automatic moving structure, depending on the specific circumstances.

[0071] It should be noted that, in the above embodiment, the shell has a light-transmitting area on the side facing the temperature detection device, and the temperature detection element emits light into the deposition chamber of the deposition equipment through the light-transmitting area, and receives the light reflected in the deposition chamber, so as to detect the temperature of the corresponding temperature field based on the emitted light and the received reflected light, but the present application is not limited to this. The temperature detection element can also use other detection methods to detect the temperature of the corresponding temperature field, depending on the specific circumstances.

[0072] Based on any of the above embodiments, in another embodiment of the present application, Figure 5 As shown, the deposition device further includes: a slide plate 40 located on the side of the shell away from the carrier plate, and the slide groove 50 is arranged on the slide plate 40 to avoid damaging the shell by directly setting the slide groove on the side of the shell facing the temperature detection device.

[0073] On the basis of any of the above embodiments, in one embodiment of the present application, the M temperature fields include a first temperature field, a second temperature field and a third temperature field, the second temperature field surrounds the first temperature field, and the third temperature field surrounds the second temperature field; the heating device includes a first heating element, a second heating element and a third heating element, the first heating element is used to heat the first area of ​​the first temperature field, the second heating element is used to heat the second area of ​​the first temperature field, the second temperature field and the first area of ​​the third temperature field, and the third heating element is used to heat the second area of ​​the third temperature field; wherein, the first area of ​​the first temperature field is the area within 1 / 3 of the radius of the first temperature field, and the second area of ​​the first temperature field is the area from 1 / 3 of the radius of the first temperature field to the boundary line between the first temperature field and the second temperature field; the first area of ​​the third temperature field is the area within 2 / 3 of the radius from the boundary line between the second temperature field and the third temperature field to the third temperature field, and the second area of ​​the third temperature field is the area within the remaining 1 / 3 of the radius of the third temperature field.

[0074] It should be noted that in the above embodiment, the first heating element, the second heating element and the third heating element are all heated independently, so that when the M temperature fields are heated in different areas based on the temperatures detected by the temperature detection elements corresponding to each temperature field, the temperature influence between the first temperature field, the second temperature field and the third temperature field can be reduced, so as to improve the temperature control accuracy of each temperature field, and thereby improve the uniformity of the M temperature fields.

[0075] Specifically, in one embodiment of the present application, the heating device is a heating wire system, but the present application is not limited to this. In other embodiments of the present application, the heating device can also be other heaters, depending on the specific circumstances.

[0076] In another embodiment of the present application, the first area of ​​the first temperature field can also be an area within 2 / 3 of the radius of the first temperature field, and the second area of ​​the first temperature field is an area from 2 / 3 of the radius of the first temperature field to the boundary line between the first temperature field and the second temperature field; the first area of ​​the third temperature field is an area within 1 / 2 of the radius from the boundary line between the second temperature field and the third temperature field to the third temperature field, and the second area of ​​the third temperature field is an area within the remaining 1 / 2 of the radius of the third temperature field. The present application does not limit this and it depends on the specific circumstances.

[0077] The working process of the deposition device provided in the embodiment of the present application is described below in conjunction with a specific embodiment. In the embodiment of the present application, the diameter of the carrier is Xmm, the first temperature field corresponds to the first temperature detection element, and the distance A1 from the first temperature detection element to the center of the carrier ranges from 0.04X to 0.1X, including the endpoint value, the second temperature field corresponds to the second temperature detection element, and the distance A2 from the second temperature detection element to the center of the carrier ranges from 1.5×2×A1 to 4×2×A1, including the endpoint value, and the third temperature field corresponds to the third temperature detection element, and the distance A3 from the third temperature detection element to the center of the carrier ranges from 1.5×3×A1 to 4×3×A1, including the endpoint value.

[0078] The deposition equipment provided in the embodiment of the present application is described below in conjunction with specific application scenarios.

[0079] Specifically, in one embodiment of the present application, taking a 4-inch carrier as an example, that is, the diameter of the carrier is 4 inches, and the center of the carrier is taken as the origin, the distance from the first temperature detection element to the center of the carrier is A1mm, and the value range of A1 is 28.5mm~71.5mm, including endpoint values; the distance from the second temperature detection element to the center of the carrier is A2=A1+150mm, and the distance from the third temperature detection element to the center of the carrier is A3=A1+270mm or A3=A2+120mm, so that when the temperature of each temperature field is controlled based on each temperature detection element, the mutual influence between different temperature fields can be reduced, thereby making the temperatures of the M temperature fields more uniform.

[0080] It should be noted that in the above embodiment, this embodiment does not limit the distance from the first temperature detection element to the center of the carrier. It only needs to ensure that the distance from the first temperature detection element to the center of the carrier is in the range of 28.5mm to 71.5mm, including the endpoint values.

[0081] Specifically, in one embodiment of the present application, in the deposition device, the first temperature detection element is located at 60 mm from the center of the carrier, the second temperature detection element is located at 210 mm from the center of the carrier, and the third temperature detection element is located at 330 mm from the center of the carrier. In specific application, the application method includes:

[0082] First, trigger the second button on the fixing bracket in the fixing device for fixing the first temperature detection element, so that the fixing device and the slide groove of the shell are in the first state, then control the fixing device to move in the slide groove, until the first temperature detection element is moved to 60 mm from the center of the carrier plate by using the positioning mark on the slide groove, and then trigger the first button on the fixing bracket in the fixing device for fixing the first temperature detection element, so that the slide groove of the fixing device and the shell is switched from the first state to the second state, and the first temperature detection element is fixed on the slide groove, and the position movement of the first temperature detection element is completed. Similarly, the second temperature detection element is moved to 210 mm from the center of the carrier plate for fixing, and the third temperature detection element is moved to 330 mm from the center of the carrier plate for fixing;

[0083] The target temperatures of the first temperature field, the second temperature field and the third temperature field are set to 800° C., and each temperature detection element is used to detect the temperature of the corresponding temperature field, and each heating element in the heating device is controlled until the temperature detected by each temperature detection element is 800° C.;

[0084] The temperature of a point is measured every 10 mm from 60 mm to 330 mm from the center of the carrier plate by using an ISO (temperature measuring machine). The temperature variation curve of each position from the first temperature field to the third temperature field is as shown in FIG. Figure 6 As shown, the wavelength curve diagram of the epitaxial structure of the LED grown in this temperature field is as follows Figure 7 shown.

[0085] Using the same method as above, the positions of the temperature detection elements corresponding to the first temperature field, the second temperature field and the third temperature field are respectively set at 60mm, 160mm and 330mm from the center of the carrier in the entire temperature field, and the temperature of a point is measured every 10mm from 60mm to 330mm from the center of the carrier using an ISO (temperature measuring machine). The temperature change curves of each position from the first temperature field to the third temperature field are shown in FIG. Figure 8 As shown, the wavelength curve diagram of the epitaxial structure of the LED grown in this temperature field is as follows Fig. 9 shown.

[0086] contrast Figure 6 and Figure 8 It can be seen that Figure 8 The temperature at 260mm-270mm where the third temperature field is biased towards the second temperature field is much lower than that in other areas. Figure 6 The temperature at 260mm-270mm where the third temperature field deviates from the second temperature field is lower than the temperature in other areas and has better uniformity.

[0087] contrast Figure 7 and Fig. 9 It can be seen that Fig. 9 The wavelength of the corresponding epitaxial structure at the third temperature field is longer than 1 / 3 of the second temperature field, and Figure 7 The corresponding epitaxial structure has a significantly improved wavelength deviation at the point where the third temperature field is biased toward 1 / 3 of the second temperature field, and has better uniformity.

[0088] In another embodiment of the present application, the first temperature detection element is located at 30 mm from the center of the carrier, the second temperature detection element is located at 180 mm from the center of the carrier, and the third temperature detection element is located at 300 mm from the center of the carrier. When the temperature detected by the first temperature detection element, the second temperature detection element and the third temperature detection element is 800°C, the temperature of a point is measured every 10 mm in the range of 60 mm to 330 mm from the center of the carrier using an ISO (temperature measuring machine), and the temperature change curve of each position from the first temperature field to the third temperature field and the wavelength curve diagram of the epitaxial structure of the LED grown in the temperature field are measured. It can also be seen that: in the deposition equipment provided in the embodiment of the present application, the temperature at 260 mm to 270 mm where the third temperature field deviates from the second temperature field is less lower than the temperature in other areas, and has better uniformity. In addition, the wavelength of the epitaxial structure grown on the substrate using the deposition equipment provided in the embodiment of the present application at the 1 / 3 of the third temperature field that deviates from the second temperature field is also significantly improved, and has better uniformity.

[0089] It can be seen that in the embodiment of the present application, when the diameter of the carrier is Xmm, the distance A1 from the setting position of the first temperature detection element to the center of the carrier is in the range of 0.04X to 0.1X, including the endpoint values, and the distance A2 from the setting position of the nth temperature detection element to the center of the graphite disk is in the range of 1.5nA1 to 4nA1, including the endpoint values, so that when the heating elements in the heating device are heated based on the temperature detected by each temperature detection element, the temperature influence between the M temperature fields can be reduced, thereby making the temperatures of the M temperature fields more uniform and the wavelength uniformity during the growth of the epitaxial structure in the LED better.

[0090] In summary, the deposition device provided in the embodiment of the present application includes: a shell, a heating device and a carrier located in a deposition chamber of the shell, and a temperature detection device located outside the shell, wherein the heating device is used to heat the carrier so as to heat the substrate through the carrier, the deposition chamber is divided into M temperature fields along a preset direction, and the M temperature fields are nested and distributed, and the temperature detection device includes multiple temperature detection elements, and the temperature detection elements correspond to the temperature fields one by one and are used to detect the temperature of the corresponding temperature fields, so that the heating device can be controlled by obtaining the temperature of the corresponding temperature field detected by each temperature detection element in the temperature detection device located outside the shell, so that the temperature of each temperature field is the same or within a certain error range, so as to improve the temperature uniformity of the M temperature fields, thereby improving the wavelength uniformity during the growth process of the epitaxial structure in the LED.

[0091] In addition, an embodiment of the present application also provides a deposition method for depositing an epitaxial structure on a substrate surface using the deposition equipment provided by any of the above embodiments.

[0092] like Fig.10 As shown, Fig.10 The flowchart of the deposition method provided in the embodiment of the present application is shown. The deposition method provided in the embodiment of the present application includes:

[0093] S10: placing the substrate on a carrier surface in a deposition chamber of a deposition device.

[0094] S20: Turn on the heating device below the carrier to heat the carrier, so as to heat the substrate through the carrier.

[0095] S30: Acquire the temperature of each temperature detection element in the temperature detection device outside the deposition shell, and control each heating element in the heating device based on each temperature detection element so that the temperature detected by each temperature detection element meets a preset condition.

[0096] S40: When the temperature detected by the temperature detection element meets a preset condition, depositing an epitaxial structure on the surface of the substrate.

[0097] It should be noted that, based on the above embodiment, the preset condition is that the temperature detected by each temperature detection element is the same as or within a certain error range of the temperature field corresponding to it, so as to improve the temperature uniformity of the temperature field. In this embodiment, the deposition method includes:

[0098] Placing the substrate on a surface of a carrier in a deposition chamber of a deposition device, and then turning on each heating element in a heating device under the carrier to heat the carrier, so as to heat the substrate through the carrier;

[0099] Move each of the temperature detection elements in the temperature detection device located outside the shell along the extension direction of the slide groove so that each of the temperature detection elements is located at the optimal temperature detection point of its corresponding temperature field, then set the target temperature of the M temperature fields as a preset temperature, obtain the temperature of each of the temperature detection elements in the temperature detection device outside the deposition shell, and control each of the heating elements in the heating device based on each of the temperature detection elements so that the temperature detected by each of the temperature detection elements is the same or within a certain error range, wherein each of the temperature detection elements in the temperature detection device located outside the shell corresponds one-to-one to the M temperature fields in the deposition chamber;

[0100] Finally, when the temperatures detected by the temperature detection elements are the same or within a certain error range, an epitaxial structure is deposited on the surface of the substrate.

[0101] Optionally, in one embodiment of the present application, the preset temperature is 800°C, but the present application is not limited to this. In other embodiments of the present application, the preset temperature can also be other temperature values. It is only necessary to ensure that the temperatures detected by each temperature detection element are the same or within a certain error range, depending on the specific situation.

[0102] Since the uniformity of the wavelength during the growth of the epitaxial structure in the LED is closely related to its temperature, after improving the temperature uniformity of each temperature field by using the deposition equipment provided by any of the above embodiments, and depositing the epitaxial structure on the substrate surface by using the deposition method provided by the embodiment of the present application, the uniformity of the wavelength during the growth of the epitaxial structure in the LED located in the deposition chamber can be improved.

[0103] To summarize, the deposition method provided in the embodiment of the present application utilizes the heating device in the deposition equipment to heat the carrier so as to heat the substrate through the carrier, and obtains the temperature of the temperature field corresponding to the temperature detected by each temperature detection element in the temperature detection device outside the shell. Based on the temperature detected by each temperature detection element, the heating device is controlled so that the temperature detected by each temperature detection element is the same or within a certain error range, so as to improve the temperature uniformity of the M temperature fields, thereby improving the wavelength uniformity during the growth process of the epitaxial structure in the LED.

[0104] In addition, an embodiment of the present application further provides a method for determining a temperature detection point in a deposition device, the method comprising:

[0105] Dividing a deposition chamber of the deposition device into M temperature fields, and heating the M temperature fields;

[0106] Detecting the temperature of each temperature field by each temperature detection element corresponding to the M temperature fields, and obtaining the wavelength of the epitaxial structure deposited on the substrate in the deposition device when the temperature of the M temperature fields meets a preset condition at each detection position;

[0107] The detection position of each of the temperature detection elements is determined based on the wavelength of the epitaxial structure deposited on the substrate in the deposition device when the temperatures of the M temperature fields at each detection position meet a preset condition.

[0108] Optionally, based on the above embodiments, in one embodiment of the present application, the preset condition is that the temperature detected by each of the temperature detection elements is the same as the temperature of its corresponding temperature field, but the present application is not limited to this. In other embodiments of the present application, the preset condition may also be that the temperature detected by each of the temperature detection elements and the temperature of its corresponding temperature field are within a certain error range, depending on the specific circumstances.

[0109] In specific operation, the method for determining the temperature detection point in the deposition device provided in the embodiment of the present application includes:

[0110] Dividing a deposition chamber of the deposition device into M temperature fields and heating the M temperature fields, wherein the deposition device comprises a plurality of temperature detection elements, and the temperature detection elements correspond one to one to each of the M temperature fields;

[0111] The target temperature of the deposition device is set to a preset temperature, and each temperature detection element is moved in a slide slot in the deposition device to a first detection position of its corresponding temperature field, and a heating device is controlled based on the temperature detected by each temperature detection element until the temperature detected by each temperature detection element meets a preset condition, and an epitaxial structure is deposited on the substrate, and the wavelength of the epitaxial structure is detected;

[0112] Move each temperature detection element in the slide slot of the deposition device to a second detection position of the corresponding temperature field, control the heating device based on the temperature detected by each temperature detection element, until the temperature detected by each temperature detection element meets a preset condition, deposit an epitaxial structure on the substrate, and detect the wavelength of the epitaxial structure;

[0113] This process is deduced in this way until the wavelength of the epitaxial structure is obtained when the temperature detection element is located at each detection position;

[0114] Then, based on the wavelength of the epitaxial structure deposited on the substrate at each detection position of each temperature detection element, the detection position corresponding to the best wavelength uniformity is determined as the optimal temperature detection point of each temperature detection element, that is, the detection position of each temperature detection element when the epitaxial structure is actually grown.

[0115] It should be noted that in one embodiment of the present application, the preset temperature is 800°C, but the present application does not limit this. The preset temperature can also be other temperature values. It only needs to ensure that the temperatures detected by each temperature detection element are the same or within a certain error range, depending on the specific situation.

[0116] It can be seen that in the embodiment of the present application, the detection position of each temperature detection element is determined by moving the position of each temperature detection element to obtain the wavelength of the epitaxial structure deposited on the substrate in the deposition device when the temperatures of the M temperature fields are the same or within a certain error range at each detection position, so as to improve the uniformity of the temperature of each temperature field when the heating device is controlled based on the temperature detected by each temperature detection element, thereby improving the uniformity of the wavelength of the epitaxial structure grown on the substrate.

[0117] The various parts in this manual are described in a combination of parallel and progressive ways. Each part focuses on the differences from other parts, and the same or similar parts between the various parts can be referenced to each other.

[0118] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A deposition device, characterized in that: include: a housing having a deposition chamber; a heating device located in the deposition chamber; A carrier plate located above the heating device, wherein a surface of the carrier plate facing away from the heating device is used for placing a substrate, and the heating device is used for heating the carrier plate so as to heat the substrate through the carrier plate; a temperature detection device located outside the housing, the temperature detection device being located on a side of the carrier away from the heating device and used for detecting the temperature in the deposition chamber; A slide groove extending along the radial direction of the carrier is provided on the side of the housing facing the temperature detection device, and the temperature detection element is fixed in the slide groove by a fixing device; Wherein, the deposition chamber is divided into M temperature fields along a preset direction, the M temperature fields are nested and distributed, and M is an integer greater than 1; the temperature detection device includes a plurality of temperature detection elements, the temperature detection elements correspond to the temperature fields one by one, and are used to detect the temperature of the corresponding temperature fields; The diameter of the carrier is X mm, and the distance A1 from the first temperature detection element to the center of the carrier is in the range of 0.04X to 0.1X, including the endpoint values; The distance A from the nth temperature detection element to the center of the carrier n The value range is 1.5nA1 to 4nA1, including the endpoint value; The distance A from the nth temperature detection element to the center of the carrier n Greater than the distance A from the n-1th temperature detection element to the center of the carrier n-1 , n is an integer greater than 1 and not greater than M.

2. The deposition device according to claim 1, characterized in that: The fixing device comprises: A fixing bracket, wherein a first end of the fixing bracket fixes the temperature detection element; a fixing member located at the second end of the fixing bracket, the fixing member comprising a first fixing member and a second fixing member; a control button located on the fixing bracket, wherein when the control button is triggered, the fixing device switches between a first state and a second state; The fixing member has a through hole that penetrates the fixing bracket along a first direction. In the first state, the first fixing member and the second fixing member are located in the through hole, and the fixing device is separated from the slide groove of the shell. In the second state, the first fixing member and the second fixing member extend from the through hole, and the fixing device is fixedly connected to the slide groove of the shell.

3. The deposition device according to claim 2, characterized in that: The control button includes a first button and a second button. When the first button is triggered, the fixing device switches from the first state to the second state. When the second button is triggered, the fixing device switches from the second state to the first state.

4. The deposition device according to any one of claims 1 to 3, characterized in that: The slide groove is provided with a positioning mark.

5. The deposition device according to claim 1, characterized in that: The shell has a light-transmitting area on one side facing the temperature detection device. The temperature detection element emits light into the deposition chamber of the deposition equipment through the light-transmitting area and receives light reflected in the deposition chamber to detect the temperature of the corresponding temperature field based on the emitted light and the received reflected light.

6. The deposition device according to claim 1, characterized in that: The M temperature fields include a first temperature field, a second temperature field and a third temperature field, the second temperature field surrounds the first temperature field, and the third temperature field surrounds the second temperature field; The heating device comprises a first heating element, a second heating element and a third heating element, wherein the first heating element is used to heat the first area of ​​the first temperature field, the second heating element is used to heat the second area of ​​the first temperature field, the second temperature field and the first area of ​​the third temperature field, and the third heating element is used to heat the second area of ​​the third temperature field; Among them, the first area of ​​the first temperature field is the area within 1 / 3 radius of the first temperature field, and the second area of ​​the first temperature field is the area from 1 / 3 radius of the first temperature field to the boundary line between the first temperature field and the second temperature field; the first area of ​​the third temperature field is the area within 2 / 3 radius of the boundary line between the second temperature field and the third temperature field to the third temperature field, and the second area of ​​the third temperature field is the area within the remaining 1 / 3 radius of the third temperature field.

7. A deposition method, characterized in that: Applied to the deposition device according to any one of claims 1 to 6, the method comprising: placing the substrate on a carrier surface in a deposition chamber of a deposition device; Turning on a heating device below the carrier to heat the carrier, so as to heat the substrate through the carrier; Acquiring the temperature of each temperature detection element in the temperature detection device outside the shell of the deposition device, and controlling each heating element in the heating device based on each temperature detection element so that the temperature detected by each temperature detection element meets a preset condition; When the temperature detected by the temperature detection element meets a preset condition, an epitaxial structure is deposited on the surface of the substrate.

8. A method for determining a temperature detection point in a deposition device, characterized in that: The deposition device according to any one of claims 1 to 6 comprises: Dividing a deposition chamber of the deposition device into M temperature fields, and heating the M temperature fields; Detecting the temperature of each temperature field by each temperature detection element corresponding to the M temperature fields, and obtaining the wavelength of the epitaxial structure deposited on the substrate in the deposition device when the temperature of the M temperature fields meets a preset condition at each detection position; The detection position of each of the temperature detection elements is determined based on the wavelength of the epitaxial structure deposited on the substrate in the deposition device when the temperatures of the M temperature fields at each detection position meet a preset condition.

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