RF front-end module, RF communication device and electronic equipment

Abstract

The present application discloses a radio frequency front-end module, a radio frequency communication device and an electronic device. The radio frequency front-end module includes a substrate, a filter circuit and a frequency divider. The substrate includes a plurality of dielectric layers stacked and a plurality of conductive layers respectively formed on the plurality of dielectric layers, at least two conductive layers in the substrate cooperate to form a filter circuit, and at least two conductive layers in the substrate cooperate to form a frequency divider. The substrate of the radio frequency front-end module adopts a multi-layer structure design and is formed with a stacked conductive layer. The plurality of conductive layers are separated by dielectric layers so that the frequency divider and the filter circuit are integrated in the packaging substrate, and the control chip and other discrete devices are installed on the packaging substrate, thereby realizing the integration of passive devices in a small volume, which greatly reduces the volume and cost.

Description

Technical Field

[0001] The present application relates to the field of radio frequency communication technology, and more specifically, to a radio frequency front-end module, a radio frequency communication device and an electronic device. Background Art

[0002] In the related art, the system-level chip can form a device module by using the system-on-a-Chip (SoC) integration method or the system-in-a-package (SIP) method. Among them, the system-on-chip can integrate a complete system on a single chip through integrated circuits, integrating all or part of the necessary functions into a single chip. However, for wireless communication applications, since RF chips are difficult to implement using silicon planar processes, the integration that can be achieved using the system-on-chip is relatively low, and the performance is difficult to meet the requirements. How to design the RF front-end module structure to improve the module integration to meet the miniaturization requirements of RF front-end electronic components has become a technical problem to be solved. Summary of the invention

[0003] Embodiments of the present application provide a radio frequency front-end module, a radio frequency communication device, and an electronic device.

[0004] The RF front-end module of the embodiment of the present application includes a substrate, a filtering circuit and a frequency divider. The substrate includes a plurality of dielectric layers stacked together and a plurality of conductive layers respectively formed on the plurality of dielectric layers. At least two of the conductive layers in the substrate cooperate to form the filtering circuit, and at least two of the conductive layers in the substrate cooperate to form the frequency divider.

[0005] The substrate of the RF front-end module of the embodiment of the present application adopts a multi-layer structure design and forms a stacked conductive layer. The multiple conductive layers are separated by a dielectric layer so that the frequency divider and the filter circuit are integrated in the packaging substrate, and the control chip and other discrete devices are installed on the packaging substrate, thereby realizing the integration of passive devices in a small volume, greatly reducing the volume and cost.

[0006] In some embodiments, the conductive layer includes a first ground layer, and a first electrode layer and a second electrode layer located on two adjacent sides of the first ground layer, and the first ground layer, the first electrode layer and the second electrode layer cooperate to form the filter circuit.

[0007] In some embodiments, the RF module includes a low noise amplifier, the first electrode layer and the first ground layer form a first capacitor to ground, and the first electrode layer is connected to an enable terminal of the low noise amplifier to filter an enable signal of the low noise amplifier.

[0008] In some embodiments, the second electrode layer and the first ground layer form a second capacitor to ground, and the second electrode layer is connected to a power input terminal of the low noise amplifier to filter a power signal of the low noise amplifier.

[0009] In some embodiments, the conductive layer includes a connection layer located on the surface of the substrate, the connection layer includes a plurality of connection points, and the low-noise amplifier is electrically connected to the filter circuit via the plurality of connection points.

[0010] In some embodiments, at least two adjacent conductive layers among the conductive layers forming the frequency divider include inductor traces, and the inductor traces in the at least two adjacent conductive layers are sequentially connected in a spiral shape to form an inductor.

[0011] In some embodiments, there are multiple inductors, and the inductor traces forming different inductors are staggered in the stacking direction.

[0012] In certain embodiments, at least two adjacent conductive layers among the conductive layers forming the frequency divider include capacitor plates, and the capacitor plates at corresponding positions in the two adjacent conductive layers form a capacitor.

[0013] In some embodiments, the conductive layer forming the frequency divider includes a second ground layer and a third electrode layer adjacent to the second ground layer, the third electrode layer includes a plurality of capacitor plates, and the plurality of capacitor plates form a plurality of capacitors with the second ground layer.

[0014] The radio frequency communication device of the embodiment of the present application includes an antenna and the radio frequency front-end module described in any one of the above embodiments, and the frequency divider is connected to the antenna.

[0015] The electronic device according to the embodiment of the present application includes the radio frequency communication device described in the above embodiment.

[0016] In the RF communication device and electronic device of the embodiments of the present application, the substrate of the RF front-end module adopts a multi-layer structure design and forms a stacked conductive layer. The multiple conductive layers are separated by a dielectric layer so that the frequency divider and the filter circuit are integrated in the packaging substrate, and the control chip and other discrete devices are installed on the packaging substrate, thereby realizing the integration of passive devices in a small volume, greatly reducing the volume and cost.

[0017] Additional aspects and advantages of the embodiments of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the embodiments of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0019] Figure 1 It is a module schematic diagram of a radio frequency communication device according to an embodiment of the present application.

[0020] Figure 2 It is a schematic diagram of the three-dimensional structure of the substrate according to the embodiment of the present application.

[0021] Figure 3 It is another schematic diagram of the three-dimensional structure of the substrate according to the embodiment of the present application.

[0022] Figure 4 It is another three-dimensional structural schematic diagram of the substrate according to the embodiment of the present application.

[0023] Figure 5 It is another schematic diagram of the three-dimensional structure of the substrate according to the embodiment of the present application.

[0024] Figure 6 It is a schematic diagram of the layered structure of the substrate according to the embodiment of the present application.

[0025] Figure 7 is a perspective view of a substrate according to an embodiment of the present application.

[0026] Figure 8 It is a schematic plan view of a layer of a multilayer structure in a substrate according to an embodiment of the present application.

[0027] Fig. 9 It is another schematic plan view of the multilayer structure in the substrate according to the embodiment of the present application.

[0028] Fig.10 It is another plan view of the multilayer structure in the substrate according to the embodiment of the present application.

[0029] Fig.11 It is another schematic plan view of the multilayer structure in the substrate according to the embodiment of the present application.

[0030] Fig.12 It is another schematic plan view of the multilayer structure in the substrate according to the embodiment of the present application.

[0031] Fig.13 It is another schematic plan view of the multilayer structure in the substrate according to the embodiment of the present application.

[0032] Fig.14 It is another schematic plan view of the multilayer structure in the substrate according to the embodiment of the present application.

[0033] Fig.15 It is another schematic plan view of the multilayer structure in the substrate according to the embodiment of the present application.

[0034] Fig.16 It is another schematic plan view of the multilayer structure in the substrate according to the embodiment of the present application.

[0035] Fig.17 It is another schematic plan view of the multilayer structure in the substrate according to the embodiment of the present application.

[0036] Fig.18 It is another schematic plan view of the multilayer structure in the substrate according to the embodiment of the present application.

[0037] Fig.19 It is another schematic plan view of the multilayer structure in the substrate according to the embodiment of the present application.

[0038] Fig. 20 It is another schematic plan view of the multilayer structure in the substrate according to the embodiment of the present application.

[0039] Fig.21 It is another schematic plan view of the multilayer structure in the substrate according to the embodiment of the present application.

[0040] Fig. 22 It is a circuit schematic diagram of a frequency divider according to an embodiment of the present application.

[0041] Description of main component symbols:

[0042] RF communication device 1000, RF front-end module 100, substrate 10, first surface 11, second surface 12, dielectric layer 13, conductive layer 14, device connection layer 141, device connection point 1411, first electrode layer 142, first electrode 1421, first ground layer 143, first ground electrode 1431, second electrode layer 144, second electrode 1441, low noise amplifier RF output connection 1442, frequency divider conductive layer 145, capacitor plate 1451, Inductor trace 1452, third electrode layer 146, second ground layer 147, second ground electrode 1471, hollow area 1472, input-output connection layer 148, input-output connection point 1481, filter circuit 15, frequency divider 16, first port 161, second port 162, third port 163, first LC series circuit 164, LC parallel circuit 165, second LC series circuit 166, third LC series circuit 167, via 17, antenna 200. DETAILED DESCRIPTION

[0043] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals represent the same or similar elements or elements having the same or similar functions from beginning to end. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0044] For system-level chips, SIP packaging can be a planar 2D package of a multi-chip module, or it can reuse the 3D packaging structure to effectively reduce the packaging area. Through different chip arrangements and different internal bonding technologies, the system-level packaging can produce a variety of combinations with high flexibility.

[0045] Among them, module division and circuit design are important factors in SIP packaging technology. Module division refers to separating a piece of function, which is convenient for subsequent whole machine integration and SIP packaging. Circuit design should consider the details inside the module, the relationship between the module and the outside, and the integrity of the signal (delay, distribution, noise, etc.). The present application provides a radio frequency front-end module 100, a radio frequency communication device 1000 and an electronic device (not shown) based on SIP packaging technology.

[0046] See also Figure 1-21 The RF front-end module 100 of the embodiment of the present application includes a substrate 10, a filter circuit 15 and a frequency divider 16. The substrate 10 includes a plurality of dielectric layers 13 stacked and a plurality of conductive layers 14 formed on the plurality of dielectric layers 13, at least two conductive layers 14 in the substrate 10 cooperate to form the filter circuit 15, and at least two conductive layers 14 in the substrate 10 cooperate to form the frequency divider 16.

[0047] The RF front-end module 100 of the embodiment of the present application can be applied to the RF communication device 1000 of the embodiment of the present application. That is, the RF communication device 1000 of the embodiment of the present application includes the RF front-end module 100 of the embodiment of the present application.

[0048] The radio frequency communication device 1000 of the embodiment of the present application can be applied to the electronic device of the embodiment of the present application. That is, the electronic device of the embodiment of the present application includes the radio frequency communication device 1000 of the embodiment of the present application.

[0049] In the electronic device and radio frequency communication device 1000 of the implementation mode of the present application, the substrate 10 of the radio frequency front-end module 100 adopts a multi-layer structure design and forms a stacked conductive layer 14. The multiple conductive layers 14 are separated by a dielectric layer 13 so that the frequency divider 16 and the filter circuit 15 are integrated in the packaging substrate 10, and the control chip and other discrete devices are installed on the packaging substrate 10, thereby realizing the integration of passive devices in a small volume, thereby greatly reducing the volume and cost.

[0050] In some embodiments, the multi-layer structure of the substrate 10 can be manufactured by a multi-layer organic thin film process, a multi-layer low temperature co-fired ceramic process, a multi-layer printed circuit board process, or a semiconductor laminated circuit process.

[0051] In this way, passive devices such as transmission lines, inductors, capacitors, etc. can be buried inside the substrate 10, and active devices can be placed on the surface. The layers are connected by through holes, so that the frequency divider 16 and the filter circuit 15 are integrated in the substrate 10.

[0052] See also Figure 2 , Figure 3 and Figure 8 In some embodiments, the substrate 10 includes a first surface 11 and a second surface 12 opposite to each other. The conductive layer 14 includes a device connection layer 141 located on the first surface 11 and an input-output connection layer 148 located on the first surface 11 .

[0053] Active devices can be mounted on the first surface 11 and electrically connected to the substrate 10 through the device connection layer 141 . The input-output connection layer 148 is used to connect to external circuits, serving as the input-output interface of the entire RF front-end module 100 .

[0054] See also Figure 7 In some embodiments, the plurality of dielectric layers 13 and the plurality of conductive layers 14 may be provided with vias 17 , and the plurality of conductive layers 14 may be electrically connected through the vias 17 .

[0055] Specifically, the vias 17 of the dielectric layer 13 can allow the conductive circuit to pass through to connect any two conductive layers 14, and the vias 17 on the conductive layer 14 can allow the conductive circuit to pass through to connect two spaced conductive layers 14. The vias 17 can be reasonably designed according to the connection mode of the inductance and capacitance inside the substrate 10 to form the frequency divider 16 and the filter circuit 15.

[0056] In some embodiments, the dielectric layer 13 is staggered with the conductive layer 14 and has vias 17 formed at the periphery.

[0057] In this way, by opening the via holes 17 at the periphery of the dielectric layer 13 , the active devices mounted on the first surface 11 and the input / output interfaces of the second surface 12 can be electrically connected.

[0058] In some embodiments, the conductive layer 14 can be made of metal materials with good conductivity such as gold, silver, copper, aluminum and / or alloys, or made of composite polymer materials such as conductive plastics, conductive rubbers, conductive fibers and / or conductive coatings.

[0059] Specifically, the shape and size of the conductive layer 14 can be set according to actual needs.

[0060] See also Figure 6 and Figure 9-11In some embodiments, the conductive layer 14 includes a first ground layer 143, and a first electrode layer 142 and a second electrode layer 144 located on two adjacent sides of the first ground layer 143. The first ground layer 143, the first electrode layer 142 and the second electrode layer 144 cooperate to form a filter circuit 15.

[0061] The first grounding layer 143 may include a first grounding electrode 1431, the first electrode layer 142 may include a first electrode 1421, and the second electrode layer 144 may include a second electrode 1441. The first grounding electrode 1431, the first electrode 1421, and the second electrode 1441 may be in a plate shape, so that the first grounding electrode 1431, the first electrode 1421, and the second electrode 1441 may form electrode plates that are spaced and parallel to each other when stacked, and may form a capacitor to achieve a filtering function, i.e., a filtering circuit 15.

[0062] In some embodiments, the RF module includes a low noise amplifier (not shown), the first electrode 1421 and the first ground electrode 1431 can form a first capacitor to ground, and the first electrode 1421 is connected to the enable terminal of the low noise amplifier to filter the enable signal of the low noise amplifier.

[0063] In this way, the first capacitor to ground can filter out a portion of the spurious signals or interference superimposed on the enable signal, thereby ensuring stable operation of the low noise amplifier.

[0064] In some embodiments, the second electrode 1441 and the first ground electrode 1431 may form a second ground capacitor, and the second electrode layer 144 is connected to the power input terminal of the low noise amplifier to filter the power signal of the low noise amplifier.

[0065] In this way, the second capacitor to ground can filter out interference of the power supply signal of the low noise amplifier, thereby ensuring the normal operation of the low noise amplifier.

[0066] In some embodiments, the first ground electrode 1431 may be a plate, and the first ground electrode 1431 may be hollowed out to form a via hole 17 .

[0067] In this way, the via 17 allows the interconnected conductive lines to pass through and electrically connect the upper and lower layers. In addition, since the electrode plate coverage area on the first grounding layer 143 is too large, hollowing out can remove the redundant electrode plate so that the upper and lower dielectric layers can be reliably combined.

[0068] In the illustrated embodiment, three conductive layers 14 (L2-L4) in the substrate 10 cooperate to form a filter circuit 15. Of course, in other embodiments, two or more conductive layers in the substrate 10 may cooperate to form the filter circuit 15.

[0069] In some embodiments, the second electrode layer 144 includes a low noise amplifier RF output connection 1442, and the low noise amplifier RF output connection 1442 is connected to the input-output connection layer 148. Further, the input-output connection layer 148 includes a plurality of input-output connection points 1481, and the plurality of low noise amplifier RF output connections 1442 can be connected to the corresponding input-output connection points 1481 through the vias 17.

[0070] In some embodiments, the device connection layer 141 includes a plurality of device connection points 1411 , and the low noise amplifier is electrically connected to the filter circuit 15 via the plurality of device connection points 1411 .

[0071] Specifically, the device connection point 1411 may be a pad, and the low noise amplifier may be soldered to the substrate 10 through the pad to ensure stable packaging of the low noise amplifier. The input and output connection points 1481 may be package pins, and the RF front-end module 100 may be soldered to an external circuit through package pins to achieve electrical connection.

[0072] In some embodiments, the input / output connection point 1481 may be electroplated to form a metal plating layer such as tin, nickel or gold.

[0073] In this way, the solderability of the substrate can be increased, which is beneficial to the installation of the RF front-end module 100 .

[0074] In some embodiments, the RF front-end module 100 includes a surface acoustic wave filter (SAW) and / or a low noise amplifier matching device (not shown) mounted on the first surface 11, and the surface acoustic wave filter and / or the low noise amplifier matching device are electrically connected to the substrate 10 through a connection point.

[0075] The low noise amplifier, the surface acoustic wave filter and / or the low noise amplifier can be welded on the surface of the substrate 10 using bare chips or packaged chips, thereby forming a module with complete functions.

[0076] See also Figure 12-20 In some embodiments, at least two of the conductive layers 145 forming the frequency divider 16 include inductor traces 1452, and the inductor traces 1452 adjacent to corresponding positions in the stacking direction are sequentially connected in a spiral shape to form an inductor.

[0077] Specifically, the inductor trace 1452 is mainly formed by a thin and long wire on the dielectric layer 13. The inductor trace 1452 can be arranged along the corresponding annular area. The inductor traces 1452 in different conductive layers 145 can be arranged at different positions in the annular area, so that the axial connection of the inductors at corresponding positions can form an inductor in a spiral shape in three-dimensional space.

[0078] In some embodiments, the inductor traces 1452 adjacent to each other at corresponding positions in the stacking direction may be inductor traces 1452 formed on two adjacent dielectric layers 13. In other embodiments, the inductor traces 1452 adjacent to each other at corresponding positions in the stacking direction may be separated by multiple dielectric layers 13, that is, the inductor traces 1452 adjacent to each other at corresponding positions in the stacking direction may be formed on two non-adjacent dielectric layers 13.

[0079] In some embodiments, the inductor traces 1452 in the conductive layer 145 may be in a straight line, an arc line, a fold line, or other shapes in each conductive layer 145 , which are not specifically set here.

[0080] In some embodiments, there are multiple inductors, and the inductor traces 1452 forming different inductors are staggered in the stacking direction.

[0081] In this way, the mutual influence between different inductors can be reduced, ensuring the normal operation of the inductors.

[0082] In some embodiments, at least two adjacent conductive layers 145 in the conductive layers 145 forming the frequency divider 16 include capacitor plates 1451 , and the capacitor plates 1451 in corresponding positions in the two adjacent conductive layers 145 form a capacitor.

[0083] In this way, the capacitor plates 1451 at corresponding positions in two adjacent stacked conductive layers 145 can form a capacitor, thereby integrating the capacitor of the frequency divider 16 into the substrate 10 .

[0084] See also Fig.19 and Fig. 20 In some embodiments, the conductive layer 145 forming the frequency divider 16 includes a second ground layer 147 and a third electrode layer 146 adjacent to the second ground layer 147 , the third electrode layer 146 includes a plurality of capacitor plates 1451 , and the plurality of capacitor plates 1451 form a plurality of capacitors with the second ground layer 147 .

[0085] Specifically, the second grounding layer 147 includes a second grounding electrode 1471, and capacitor plates 1451 on the third electrode layer 146 are formed in the dielectric layer 13 at intervals, and each capacitor plate 1451 is connected to the second grounding electrode 1471 to form a plurality of grounding capacitors. The plurality of grounding capacitors can be connected to corresponding inductors to form a frequency divider 16.

[0086] In some embodiments, the second ground layer 147 may include a hollow area 1472 .

[0087] Among them, the hollow area 1472 can correspond to the inductor setting, which is helpful to eliminate the parasitic capacitance of the frequency divider 16 to the ground, so as to reduce the loss of useful signals. At the same time, since the parasitic effect to the ground will reduce the equivalent inductance value of the inductor inside the module, the hollow area 1472 is formed by hollowing out the part directly below the inductor, which is helpful to increase the equivalent inductance value.

[0088] Similarly, since the electrode plate coverage area on the second grounding layer 147 is too large, the hollow area 1472 can be provided to facilitate reliable combination of the upper and lower dielectric layers.

[0089] In some embodiments, the first ground electrode 1431 is electrically connected to the second ground electrode 1471 .

[0090] In this way, the first ground layer 143 and the second ground layer 147 can maintain the same potential.

[0091] In the illustrated embodiment, nine conductive layers 14 (L5-L13) in the substrate 10 cooperate to form a frequency divider 16. Of course, in other embodiments, 2-8 conductive layers or more than nine conductive layers 14 in the substrate 10 may cooperate to form a frequency divider 16, which is not specifically limited herein.

[0092] See also Fig. 22 In some embodiments, the frequency divider 16 includes a first port 161 , a second port 162 , and a third port 163 . A first path is formed between the first port 161 and the third port 163 , and a second path is formed between the second port 162 and the third port 163 .

[0093] like Figure 4 and Figure 5 As shown, the first port 161 and the second port 163 may be disposed on the input-output connection layer 148 of the substrate 10 , and the third port 163 may be disposed on the device connection layer 141 of the substrate 10 .

[0094] In some embodiments, the first path includes an LC parallel circuit 165 connecting the first port 161 and the third port 163 and a first LC series circuit 164 connecting the third port 163 and ground. Specifically, the capacitor C6 in the first LC series circuit 164 is grounded, and the inductor L4 is connected to the third port 163.

[0095] In some embodiments, the second path includes the first path, a first capacitor C1 and a second LC series circuit 166 connecting the first port 161 and the ground in series, a third LC series circuit 167 connecting the second LC series circuit 166 and the second port 162 in parallel, and a second capacitor C4 connecting the second port 162 and the ground.

[0096] Specifically, the capacitor C2 in the second LC series circuit 166 is grounded, the inductor L2 is connected to the capacitor C3 of the third LC series circuit 167 and the first capacitor C1 , and the inductor L1 of the third LC series circuit 167 is connected to the second port 162 .

[0097] The radio frequency communication device 1000 according to the embodiment of the present application includes an antenna 200 , and the frequency divider 16 is connected to the antenna 200 .

[0098] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments" or "an example" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0099] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. A radio frequency front-end module, characterized in that: include: A substrate, the substrate comprising a plurality of dielectric layers stacked in layers and a plurality of conductive layers respectively formed on the plurality of dielectric layers; A filter circuit, wherein at least two of the conductive layers in the substrate cooperate to form the filter circuit, the conductive layer includes a first ground layer and a first electrode layer and a second electrode layer located on two adjacent sides of the first ground layer, the first ground layer, the first electrode layer and the second electrode layer cooperate to form the filter circuit, the first electrode layer and the first ground layer form a first capacitor to ground, and the second electrode layer and the first ground layer form a second capacitor to ground, wherein the first ground layer includes a first ground electrode, the first electrode layer includes a first electrode, the second electrode layer includes a second electrode, the first ground electrode is a plate, and the first ground electrode is hollowed out to form a via; and A frequency divider, at least two of the conductive layers in the substrate cooperate to form the frequency divider, the conductive layers forming the frequency divider include a second grounding layer and a third electrode layer adjacent to the second grounding layer, wherein the second grounding layer includes a second grounding electrode, and a plurality of capacitor plates on the third electrode layer are formed at intervals on the dielectric layer, each of the capacitor plates is connected to the second grounding electrode to form a plurality of grounding capacitors, and the plurality of grounding capacitors are connected to corresponding inductors to cooperate to form the frequency divider, and the second grounding layer includes a hollow area.

2. The RF front-end module according to claim 1, characterized in that: The RF front-end module includes a low-noise amplifier, and the first electrode layer is connected to an enable terminal of the low-noise amplifier to filter an enable signal of the low-noise amplifier.

3. The RF front-end module according to claim 2, characterized in that: The second electrode layer is connected to a power input terminal of the low noise amplifier to filter the power signal of the low noise amplifier.

4. The RF front-end module according to claim 2, characterized in that: The conductive layer includes a connection layer located on the surface of the substrate, the connection layer includes a plurality of connection points, and the low-noise amplifier is electrically connected to the filter circuit via the plurality of connection points.

5. The RF front-end module according to claim 1, characterized in that: At least two of the conductive layers forming the frequency divider include inductor traces, and the inductor traces in the at least two adjacent conductive layers are sequentially connected in a spiral shape to form an inductor.

6. The RF front-end module according to claim 5, characterized in that: There are multiple inductors, and the inductor traces forming different inductors are staggered in the stacking direction.

7. The RF front-end module according to claim 1, characterized in that: At least two adjacent conductive layers in the conductive layers forming the frequency divider include capacitor plates, and the capacitor plates in corresponding positions in the two adjacent conductive layers form a capacitor.

8. A radio frequency communication device, characterized in that: include: antenna; and In the RF front-end module according to any one of claims 1 to 7, the frequency divider is connected to the antenna.

9. An electronic device, characterized in that: Includes the radio frequency communication device as claimed in claim 8.

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