A sintering device for silicon Schottky diode and a method of using the same

Abstract

The invention discloses a sintering device for a silicon Schottky diode and a method for using the device, comprising: a bottom plate, a guide column, a chip positioning plate, a ceramic mounting positioning plate, and a copper bottom mounting plate; a plurality of terminals can be installed through a plurality of through holes on the bottom plate; previously, a graphite clamp was used to install the terminals, and only twelve silicon Schottky diodes could be assembled in one hour; by using the sintering device for assembly, thirty silicon Schottky diodes could be assembled in one hour, the production output was increased by sixty, and the problem of low production efficiency was solved; four chips are respectively positioned and placed completely at right angles of a rectangular chip positioning through hole A; previously, a graphite clamp was used to install the chips, and the yield rate of the assembled silicon Schottky diodes was only about sixty percent; by using the sintering device for assembly, the yield rate of the assembled silicon Schottky diodes reached ninety percent, and the current problem of low yield rate was solved.

Description

Technical Field

[0001] The invention relates to a sintering device for a silicon Schottky diode and a use method thereof, belonging to the technical field of electronic device processing. Background Art

[0002] Most Schottky diodes are packaged in TO-244AB epoxy resin solid package. The module bottom plate of this package is insulated and connected, and then it is filled with glue and sealed. At present, the module is generally assembled using ordinary graphite fixtures. This assembly method has low precision and is difficult to position. Only twelve silicon Schottky diodes can be assembled in one hour, resulting in low production efficiency. When using graphite fixtures for assembly, chip shifting often occurs, resulting in a product yield of only about 60%. The main reason for the low yield is the unreasonable structure of the assembly fixture. Summary of the invention

[0003] In order to solve the above technical problems, the present invention provides a sintering device for a silicon Schottky diode.

[0004] The invention also provides a method for using the sintering device of the silicon Schottky diode.

[0005] The present invention is achieved through the following technical solutions.

[0006] The present invention provides a sintering device for a silicon Schottky diode, comprising: a bottom plate, a guide column, the guide column is vertically fixed on the bottom plate, and a plurality of through holes are arranged on the bottom plate, and the through holes are evenly spaced and distributed in groups of three;

[0007] The chip positioning plate is provided with a chip positioning through hole A, a mounting through hole, and a guide through hole A. The chip positioning through hole A is rectangular. The mounting through hole is located between two chip positioning through holes A to form a group. One mounting through hole, two chip positioning through holes A correspond concentrically to the three through holes. The guide through hole A of the chip positioning plate is fitted with a guide column.

[0008] The ceramic installation positioning plate is provided with a guide through hole B and a ceramic installation through hole. The ceramic installation positioning plate is located on the chip positioning plate after being assembled with the guide through hole B and the guide column.

[0009] The copper bottom mounting plate is provided with a guide through hole C and a copper bottom mounting through hole. The copper bottom mounting plate is positioned on the ceramic mounting positioning plate after being fitted with the guide through hole C and the guide column.

[0010] The guide through hole C is a circular hole.

[0011] The guide through hole B is a circular hole.

[0012] The middle part of the ceramic installation through hole is an arc surface A that widens outwards; the arc surface facilitates the position adjustment and installation of the ceramic copper clad board.

[0013] The middle part of the copper bottom mounting through hole is an arc surface B that widens outwards; the arc surface B facilitates the copper bottom plate to be adjusted in position and mounted.

[0014] The arc surface B has the same width as the arc surface A, and the upper and lower bottom surfaces overlap, forming a flush inner surface to ensure that the copper bottom plate and the ceramic copper-clad board are installed flush on the side.

[0015] The guide column is cylindrical, and is fixedly installed with the base plate by welding, threaded engagement, or interference fit of an axial hole.

[0016] There are three guide columns distributed on the bottom plate in a triangle shape.

[0017] The through hole is a round hole or a square hole. When the through hole is a round hole, it is easy to process. When the through hole is a square hole, since the terminal is cylindrical, the cylindrical surface at the bottom of the terminal is tangent to the square hole and there is a gap after installation, which is convenient for removing the terminal.

[0018] The method for using the above-mentioned silicon Schottky diode sintering device comprises the following steps:

[0019] Step 1: The bottoms of the two binding posts are mounted on two through holes spaced apart in a set of through holes on the bottom plate;

[0020] Step 2: Assemble the guide through hole A and the guide column of the chip positioning plate, and place the four chips through the right angles of the rectangular chip positioning through hole A;

[0021] Step 3: The ceramic mounting positioning plate is assembled with the guide column through the guide through hole B, and the ceramic copper clad plate is installed in the ceramic mounting through hole; the ceramic copper clad plate is pressed tightly on the chip;

[0022] Step 4: The copper bottom mounting plate is assembled with the guide column through the guide through hole C, and the copper bottom plate is installed in the copper bottom mounting through hole; the copper bottom plate is pressed tightly against the ceramic copper clad plate.

[0023] The beneficial effects of the present invention are as follows: multiple terminals can be installed through multiple groups of through holes on the bottom plate. Previously, a graphite clamp was used to install the terminals, and only twelve silicon Schottky diodes could be assembled in one hour. By using the present sintering device for assembly, thirty silicon Schottky diodes can be assembled in one hour, which increases the production output by sixty and solves the problem of low production efficiency; four chips are respectively positioned and placed at right angles of the rectangular chip positioning through hole A. Previously, a graphite clamp was used to install the chips, and the yield rate of the assembled silicon Schottky diodes was only about sixty percent. By using the present sintering device for assembly, the yield rate of the assembled silicon Schottky diodes reaches ninety percent, which solves the current problem of low yield rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic diagram of the bottom plate structure of the present invention;

[0025] Figure 2 This is a schematic diagram of the structure of the base plate and chip positioning plate of the present invention. Figure 1 ;

[0026] Figure 3 This is a schematic diagram of the structure of the base plate and chip positioning plate of the present invention. Figure 2 ;

[0027] Figure 4 It is a schematic diagram of the installation structure of the base plate, the chip positioning plate, and the ceramic installation positioning plate of the present invention;

[0028] Figure 5 It is a schematic diagram of the installation structure of the base plate, chip positioning plate, ceramic mounting positioning plate, and copper bottom mounting plate of the present invention;

[0029] In the figure: 1-base plate; 11-through hole; 2-guide column; 3-chip positioning plate; 31-chip positioning through hole A; 32-mounting through hole; 33-guide through hole; 4-ceramic mounting positioning plate; 41-guide through hole B; 42-ceramic mounting through hole; 5-copper bottom mounting plate; 51-guide through hole C; 52-copper bottom mounting through hole; 6-binding post; 7-chip; 8-ceramic copper clad laminate; 9-copper base plate. DETAILED DESCRIPTION

[0030] The technical solution of the present invention is further described below, but the scope of protection claimed is not limited to the description.

[0031] See also Figures 1 to 5 shown.

[0032] The present invention provides a sintering device for a silicon Schottky diode, comprising: a bottom plate 1, a guide post 2, the guide post 2 being vertically fixed to the bottom plate 1, the bottom plate 1 being provided with a plurality of through holes 11, and the through holes 11 being evenly spaced and distributed in groups of three;

[0033] The chip positioning plate 3 is provided with a chip positioning through hole A31, a mounting through hole 32, and a guide through hole A33. The chip positioning through hole A31 is rectangular. The mounting through hole 32 is located between two chip positioning through holes A31 to form a group. One mounting through hole 32, two chip positioning through holes A31 and three through holes 11 are concentrically corresponding. The guide through hole A33 of the chip positioning plate 3 is fitted with the guide column 2.

[0034] The ceramic mounting positioning plate 4 is provided with a guide through hole B41 and a ceramic mounting through hole 42 . The ceramic mounting positioning plate 4 is positioned on the chip positioning plate 3 after being assembled with the guide through hole B41 and the guide column 2 .

[0035] The copper bottom mounting plate 5 is provided with a guide through hole C51 and a copper bottom mounting through hole 52 . The copper bottom mounting plate 5 is located on the ceramic mounting positioning plate 4 after being fitted with the guide through hole C51 and the guide column 2 .

[0036] The guide through hole C51 is a round hole.

[0037] The guide through hole B41 is a round hole.

[0038] The middle portion of the ceramic installation through hole 42 is an arc surface A43 that widens outwards; the arc surface 43 facilitates the position adjustment and installation of the ceramic copper clad laminate.

[0039] The middle part of the copper bottom mounting through hole 52 is an arc surface B53 that widens outwards; the arc surface B53 facilitates the position adjustment and mounting of the copper bottom plate.

[0040] The arc surface B53 has the same width as the arc surface A43, and the upper and lower bottom surfaces overlap, forming a flush inner surface to ensure that the copper bottom plate and the ceramic copper-clad board are installed flush on the side.

[0041] The guide column 2 is cylindrical, and the guide column 2 and the base plate 1 are fixedly installed by welding, threaded engagement, or interference fit of an axial hole.

[0042] There are three guide posts 2 distributed on the bottom plate 1 in a triangle shape.

[0043] The through hole 11 is a round hole or a square hole. When the through hole 11 is a round hole, it is easy to process. When the through hole 11 is a square hole, since the terminal is cylindrical, the cylindrical surface at the bottom of the terminal is tangent to the square hole and there is a gap after installation, which is convenient for removing the terminal.

[0044] The method for using the above-mentioned silicon Schottky diode sintering device comprises the following steps:

[0045] Step 1: The bottoms of the two binding posts 6 are mounted on two through holes 11 spaced apart from each other in a group of through holes 11 on the bottom plate 1;

[0046] Step 2: The guide through hole A33 of the chip positioning plate 3 is assembled with the guide column 2, and the four chips 7 are respectively positioned and placed through the right angles of the rectangular chip positioning through hole A21, and the chip 7 is flush with the top surface of the chip positioning plate 3;

[0047] Step 3: The ceramic mounting positioning plate 4 is mounted on the guide column 2 through the guide through hole B41, and the ceramic copper clad plate 8 is installed in the ceramic mounting through hole 42 and flush; the ceramic copper clad plate 8 is pressed tightly on the chip 7;

[0048] Step 4: The copper bottom mounting plate 5 is mounted on the guide column 2 through the guide through hole C51 , and the copper bottom plate 9 is installed in the copper bottom mounting through hole 52 and is flush; the copper bottom plate 9 is pressed tightly against the ceramic copper clad plate 8 .

[0049] A plurality of terminals 6 can be installed through a plurality of through holes 11 on the base plate 1. Previously, a graphite clamp was used to install the terminals 6, and only twelve silicon Schottky diodes could be assembled in one hour. By using the present sintering device for assembly, thirty silicon Schottky diodes can be assembled in one hour, increasing the production output by sixty and solving the problem of low production efficiency. The four chips 7 are respectively positioned and placed at right angles of the rectangular chip positioning through hole A21. Previously, a graphite clamp was used to install the chips 7, and the yield rate of the assembled silicon Schottky diodes was only about sixty percent. By using the present sintering device for assembly, the yield rate of the assembled silicon Schottky diodes reached ninety percent, solving the current problem of low yield rate.

Claims

1. A sintering device for a silicon Schottky diode, characterized in that: include: A base plate (1) and a guide column (2), wherein the guide column (2) is vertically fixed to the base plate (1), and a plurality of through holes (11) are provided on the base plate (1), wherein the through holes (11) are evenly spaced and distributed in groups of three; A chip positioning plate (3), wherein the chip positioning plate (3) is provided with a chip positioning through hole A (31), a mounting through hole (32), and a guide through hole A (33), wherein the chip positioning through hole A (31) is rectangular, and the mounting through hole (32) is located between two chip positioning through holes A (31) to form a group, wherein one mounting through hole (32), two chip positioning through holes A (31) and three through holes (11) are concentrically corresponding, and the guide through hole A (33) of the chip positioning plate (3) is fitted with the guide column (2); A ceramic mounting positioning plate (4), wherein the ceramic mounting positioning plate (4) is provided with a guide through hole B (41) and a ceramic mounting through hole (42), and the ceramic mounting positioning plate (4) is positioned on the chip positioning plate (3) after being assembled with the guide through hole B (41) and the guide column (2); A copper bottom mounting plate (5), the copper bottom mounting plate (5) being provided with a guide through hole C (51) and a copper bottom mounting through hole (52), the copper bottom mounting plate (5) being located on the ceramic mounting positioning plate (4) after being fitted with the guide through hole C (51) and the guide column (2); The middle part of the ceramic mounting through hole (42) is an arc surface A (43) that widens outwards; The middle part of the copper bottom mounting through hole (52) is an arc surface B (53) that widens outwards; The arc surface B (53) has the same width as the arc surface A (43), and the upper and lower bottom surfaces coincide with each other.

2. The sintering device for silicon Schottky diode according to claim 1, characterized in that: The guide through hole C (51) is a circular hole.

3. The sintering device for silicon Schottky diode according to claim 1, characterized in that: The guide through hole B (41) is a circular hole.

4. The sintering device for silicon Schottky diode according to claim 1, characterized in that: The guide column (2) is cylindrical, and the guide column (2) and the base plate (1) are fixedly installed by welding, threaded engagement, or interference fit of an axial hole.

5. The sintering device for silicon Schottky diode according to claim 1, characterized in that: There are three guide columns (2) distributed on the bottom plate (1) in a triangle shape.

6. The sintering device for silicon Schottky diode according to claim 1, characterized in that: The through hole (11) is a round hole or a square hole.

7. The method for using the sintering device for silicon Schottky diode according to any one of claims 1 to 6, characterized in that: The steps include: Step 1: The bottoms of the two binding posts (6) are mounted on two through holes (11) spaced apart from each other in a group of through holes (11) on the bottom plate (1); Step 2: The guide through hole A (33) of the chip positioning plate (3) is assembled with the guide column (2), and the four chips (7) are respectively positioned and placed at the right angles of the rectangular chip positioning through hole A (21); Step 3: The ceramic mounting positioning plate (4) is mounted on the guide column (2) through the guide through hole B (41), and the ceramic copper clad plate (8) is installed in the ceramic mounting through hole (42); the ceramic copper clad plate (8) is pressed tightly against the chip (7); Step 4: The copper bottom mounting plate (5) is mounted on the guide column (2) through the guide through hole C (51), and the copper bottom plate (9) is mounted on the copper bottom mounting through hole (52); the copper bottom plate (9) is pressed tightly against the ceramic copper clad plate (8).

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