Ion source electric field structure and ion source device

Abstract

The present application relates to an ion source electric field structure and an ion source device. The ion source electric field structure includes: an anode component arranged in a housing, and an isolation metal layer is arranged between the anode component and the housing; the isolation metal layer is an annular design corresponding to the anode component, and is insulated from the anode component and the housing; the isolation metal layer senses an electric field of a voltage through the anode component, and the emission angle of the ion beam emitted by the ion source is controlled by the electric field. The technical solution of the present application is to set an isolation metal layer of an annular design corresponding to the anode component between the anode component and the housing; the isolation metal layer is in a suspended potential, and senses an electric field of a voltage through the anode component, and the emission angle of the ion beam emitted by the ion source is controlled by the electric field; the electric field structure can effectively control the emission angle range of the ion beam of the ion source, and improve the concentration effect of the ion beam emitted by the ion source.

Description

Technical Field

[0001] The present application relates to the technical field of ion sources, and in particular to an ion source electric field structure and an ion source device. Background Art

[0002] Ion source is an applied science and technology with wide applications, many types, many sciences involved, strong process technology, and rapid development. As a very common type of ion source, Hall ion source is mostly used in the field of thin film deposition as a deposition auxiliary component to improve the physical properties of thin films. The Hall ion source is a process gas that is plasmatized by the anode in the cooperation of a strong axial magnetic field. The plasmatized gas is accelerated by the anode to separate the gas ions and form an ion beam.

[0003] In a common ion source, the electric field structure is mainly realized by the anode component 10, such as Figure 1 As shown, Figure 1 It is a schematic diagram of the emission angle of a commonly used ion source. The anode component 10 accelerates the ion beam through the electric field. It can be found from the figure that the divergence angle of the ion source itself is very large, generally reaching more than 90°. The excessive divergence angle makes the ion beam distribution unconcentrated. When used in situations where the target object is a small area, if the emission angle range required by the ion source is too large, the ion beam will be too dispersed and the density will be low, resulting in a low effective use efficiency of the ion beam. Summary of the invention

[0004] The purpose of the present application is to solve one of the above-mentioned technical defects, especially the defect of low effective utilization efficiency of ion beam, and to provide an ion source electric field structure and an ion source device.

[0005] The present application provides an ion source electric field structure, comprising:

[0006] An ion source electric field structure includes an anode component arranged in a housing, and an isolation metal layer is arranged between the anode component and the housing;

[0007] The isolation metal layer is designed in a ring shape corresponding to the anode component and is insulated from the anode component and the housing;

[0008] The isolation metal layer induces an electric field of a voltage through the anode component, and the emission angle of the ion beam emitted by the ion source is controlled by the electric field.

[0009] In one embodiment, the isolation metal layer is designed to be annular, and its shape is the same as the upper cross-section of the anode component.

[0010] In one embodiment, the ion source electric field structure further includes a supporting structure for fixing the isolation metal layer.

[0011] In one embodiment, isolation gaskets are provided above and below the isolation metal layer, respectively, and the isolation gaskets are used to support the isolation metal layer and fix the isolation metal layer at a set distance between the anode component and the housing.

[0012] In one embodiment, the isolation spacer is a quartz isolation spacer.

[0013] In one embodiment, the isolation metal layer is further connected to a voltage source, and the voltage source outputs a voltage to the isolation metal layer to generate a corresponding induced electric field.

[0014] In one embodiment, the ion source electric field structure further includes a human-computer interaction module connected to the control circuit;

[0015] The control circuit is also used to receive input parameter data through the human-computer interaction module.

[0016] In one embodiment, the control circuit is further configured to calculate the emission angle according to the input coverage range, and calculate the output voltage of the voltage source according to the emission angle.

[0017] In one embodiment, the control circuit is further configured to calculate the emission angle according to the input coverage range.

[0018] The present application also provides an ion source device, including: a cathode, an anode component and a housing, and the above-mentioned ion source electric field structure.

[0019] The ion source electric field structure and ion source device of the present application are characterized by an annular isolation metal layer corresponding to the anode component set between the anode component and the shell; the isolation metal layer is in a suspended potential, and an electric field of a voltage is induced by the anode component, and the emission angle of the ion beam emitted by the ion source is controlled by the electric field; the electric field structure can effectively control the ion beam emission angle range of the ion source, thereby improving the concentration effect of the ion beam emitted by the ion source.

[0020] Furthermore, by adding isolation gaskets above and below the isolation metal layer to support the isolation metal layer and fix it at a set distance between the anode component and the shell, the distance between the anode and the shell can be better controlled, ions are blocked from entering the ion source, and sparks caused inside the ion source are prevented.

[0021] Furthermore, the isolation metal sheet is also connected to a voltage source, and the voltage source outputs a voltage to the isolation metal layer to generate a corresponding induced electric field, and the emission angle of the ion beam can be controlled by the induced electric field.

[0022] Finally, a control circuit is also provided, through which the output voltage of the voltage source can be controlled, thereby automatically adjusting the emission angle of the ion beam, and the output voltage of the voltage source can be calculated by receiving the emission angle input by the control circuit, and the emission angle can also be calculated according to the input coverage range, thus realizing intelligent adjustment of the coverage range of the ion source.

[0023] Additional aspects and advantages of the present application will be partially given in the following description, which will become apparent from the following description, or will be understood through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0025] Figure 1 It is a schematic diagram of the emission angle of commonly used ion sources;

[0026] Figure 2 is a three-dimensional diagram of the electric field structure of the ion source of the present application;

[0027] Figure 3 is a cross-sectional schematic diagram of the electric field structure of the ion source of the present application;

[0028] Figure 4 is a schematic diagram of a supporting structure of an embodiment;

[0029] Figure 5 is a diagram of a connection circuit structure of an isolation metal layer of an embodiment;

[0030] Figure 6 is a connection circuit structure diagram of an isolation metal layer of another embodiment;

[0031] Figure 7 is a schematic diagram of the ion source coverage. DETAILED DESCRIPTION

[0032] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be interpreted as limiting the present application.

[0033] Those skilled in the art will appreciate that, unless otherwise stated, the singular forms "a", "an", "said" and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present application refers to the presence of the features, integers, steps, operations, but does not exclude the presence or addition of one or more other features, integers, steps, operations.

[0034] Combination Figure 1 Shown and Figure 2 As shown, Figure 2 1 is a three-dimensional diagram of the electric field structure of the ion source of the present application; the ion source mainly includes a magnet 01, an anode component 10, a housing 20 and a cathode 30. The cathode 30 used in the figure is a cathode neutralizer, and the ion source shown in the figure adopts a bottom ventilation structure. Generally, the housing 20 of the ion source is designed as a circular structure.

[0035] refer to Figure 3 , Figure 3 Schematic diagram of the cross-section of the ion source electric field structure of the present application, such as Figure 3 In the technical solution of the present application, an isolation metal layer 40 (shaded part in the figure) is further provided between the anode component 10 and the housing 20; the isolation metal layer 40 is annularly designed to correspond to the anode component 10, and the isolation metal layer 40 is insulated from the anode component 10 and the housing 20. When the ion source is working, the isolation metal layer 40 is at a suspended potential, and an electric field of a voltage can be sensed through the anode component 10, and the electric field exerts a force on the ion beam emitted by the ion source, thereby controlling the emission angle of the ion beam.

[0036] Combination Figure 2 As shown, the shell of the ion source is circular in design, and the isolation metal layer 40 in the electric field structure of the ion source is also circular in design, and its shape can be the same as the upper cross-section of the anode component 10. The present application provides an isolation metal layer 40 of annular design corresponding to the anode component 10, which is arranged between the anode component 10 and the shell 20; the isolation metal layer 40 is in a suspended potential, and an electric field of a voltage is induced by the anode component 10, and the emission angle of the ion beam emitted by the ion source is controlled by the electric field; the electric field structure can effectively control the emission angle range of the ion beam of the ion source, and can improve the concentration effect of the ion beam emitted by the ion source.

[0037] More embodiments of the present application will be described below in conjunction with the accompanying drawings.

[0038] In one embodiment, the ion source electric field structure of the present application may further include a support structure 50 for fixing the isolation metal layer 40. The shape and structure of the support structure 50 may be designed according to actual needs, and its function is to fix the isolation metal layer.

[0039] As an embodiment, the solution provided by the present application is provided with a first isolation gasket 501 and a second isolation gasket 502 above and below the isolation metal layer 40, respectively. The first isolation gasket 501 and the second isolation gasket 502 are used to support the isolation metal layer 40 and fix the isolation metal layer 40 at a set distance between the anode component 10 and the housing 20. Figure 4 As shown, Figure 4Schematic diagram of a support structure 50 of an embodiment (only the schematic diagram of the ion source is shown in the figure); a first isolation gasket 501 and a second isolation gasket 502 are respectively arranged above and below the isolation metal layer 40, and the isolation metal sheet can be fixed between the housing 20 and the anode component 10. Generally, the isolation gasket and the isolation metal layer 40 have the same shape, both of which are annular in design. Optionally, the isolation gasket can be implemented by a quartz isolation plate, and of course, gaskets of other insulating materials can also be used.

[0040] The technical solution of the above embodiment adds isolation gaskets above and below the isolation metal layer 40 to support the isolation metal layer 40 and fix it at a set distance between the anode component 10 and the outer shell 20, so as to better control the distance between the anode and the outer shell 20. Moreover, the upper and lower gaskets can also block ions from entering the interior of the ion source to prevent sparks caused inside the ion source.

[0041] In one embodiment, reference Figure 5 , Figure 5 : is a connection circuit structure diagram of the isolation metal layer 40 of an embodiment. The isolation metal layer 40 of the ion source electric field structure of the present application can also be connected to a voltage source 60, and the voltage source 60 outputs a voltage to the isolation metal layer 40 to generate a corresponding induced electric field. Through the induced electric field, the emission angle of the ion beam can be controlled, thereby controlling the coverage range of the ion source.

[0042] As an example, refer to Figure 6 , Figure 6 4 is a connection circuit structure diagram of the isolation metal layer 40 of another embodiment. For the ion source electric field structure, it can also include a control circuit 70 connected to the voltage source 60, and the control circuit 70 can be used to control the output voltage of the voltage source 60. For example, the control circuit 70 can perform human-computer interaction through the human-computer interaction module 710. The user can input the emission angle range of the required coating on the human-computer interaction module 710, and the control circuit 70 receives the emission angle range data input by the user, and calculates the output voltage of the voltage source 60 according to the emission angle range data, and then controls the voltage source 60 to output the corresponding voltage, so as to achieve the purpose of intelligently controlling the emission angle range of the ion source.

[0043] In addition, if Figure 7 As shown, Figure 7 The ion source coverage diagram is shown in FIG. 7 . The user can also input the coverage diameter R of the target object, the distance D between the ion source and the covered target object, and other data on the human-computer interaction module 710 . The control circuit 70 can calculate the output voltage required by the voltage source 60 according to the coverage diameter R of the target object and the distance D between the ion source and the covered target object, and then intelligently adjust the coverage range of the ion source, so as to achieve the purpose of intelligently controlling the emission angle range of the ion source.

[0044] The technical solution of the above embodiment generates a corresponding induced electric field by outputting a voltage from the voltage source 60 to the isolation metal layer 40, and the emission angle of the ion beam can be controlled by the induced electric field. The output voltage of the voltage source 60 can be controlled by the control circuit 70, thereby automatically adjusting the emission angle of the ion beam.

[0045] An embodiment of the ion source device of the present application is described below.

[0046] The ion source device provided in the present application may include components such as a cathode 30, an anode component 10, and a housing 20, and may also include the ion source electric field structure referred to in any of the above embodiments. The basic structure of the ion source device may be as follows: Figure 1-2 The commonly used ion source device structure shown may of course also include other improved forms of ion source devices. The present application adds an isolation metal layer 40 between the housing 20 and the anode component 10 to induce an electric field of a voltage, thereby controlling the angle range of the ion beam emitted by the ion source, which has great use value in practical applications; for example, in a coating device, when only a target object with a small area needs to be coated, the emission process of the ion source device can be adjusted by controlling the emission angle range, thereby improving the use efficiency of the ion beam and achieving precise coating.

[0047] It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those generally understood by those skilled in the art to which this application belongs. It should also be understood that terms such as those defined in general dictionaries should be understood to have meanings consistent with those in the context of the prior art, and will not be interpreted with idealized or overly formal meanings unless specifically defined as here.

[0048] The above is only a partial implementation method of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. An ion source electric field structure, comprising an anode component arranged in a housing, characterized in that: An isolating metal layer is also provided between the anode component and the housing; The isolation metal layer is designed in a ring shape corresponding to the anode component and is insulated from the anode component and the housing; The isolation metal layer is at a suspended potential and is connected to a voltage source, the voltage source outputs a voltage to the isolation metal layer, the isolation metal layer senses an electric field of a voltage through the anode component, and the emission angle of the ion beam emitted by the ion source is controlled by the electric field; The ion source coverage is adjusted by adjusting the output voltage of the voltage source, thereby achieving control of the emission angle.

2. The ion source electric field structure according to claim 1, characterized in that: The isolation metal layer is designed to be annular, and its shape is the same as the upper cross section of the anode component.

3. The ion source electric field structure according to claim 1, characterized in that: A supporting structure is also included for fixing the isolation metal layer.

4. The ion source electric field structure according to claim 3, characterized in that: Isolation gaskets are respectively arranged above and below the isolation metal layer, and the isolation gaskets are used to support the isolation metal layer and fix the isolation metal layer at a set distance between the anode component and the shell.

5. The ion source electric field structure according to claim 4, characterized in that: The isolation gasket is a quartz isolation gasket.

6. The ion source electric field structure according to claim 1, characterized in that: Also includes: A control circuit connected to the voltage source is used to control the output voltage of the voltage source.

7. The ion source electric field structure according to claim 6, characterized in that: Also included is a human-computer interaction module connected to the control circuit; The control circuit is further used to receive input parameter data through the human-computer interaction module; the parameter data at least includes at least one of the coverage diameter of the target object and the distance between the ion source and the covered target object.

8. The ion source electric field structure according to claim 7, characterized in that: The control circuit is further configured to calculate the emission angle according to the input coverage range, and calculate the output voltage of the voltage source according to the emission angle.

9. An ion source device, comprising: The cathode, anode components and shell are characterized by further comprising: the ion source electric field structure according to any one of claims 1-8.

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