Power semiconductor module and method of manufacturing the same

Abstract

A power semiconductor module comprises a power semiconductor chip arranged between a first and a second substrate and electrically coupled to the first and the second substrate, and a temperature sensor arranged between the first and the second substrate and laterally arranged beside the power semiconductor chip such that a first side of the temperature sensor faces the first substrate and a second side of the temperature sensor faces the second substrate, wherein a first electrical contact of the temperature sensor is arranged on the first side and electrically coupled to the first substrate, and wherein a second electrical contact of the temperature sensor is arranged on the second side and electrically coupled to the second substrate.

Description

TECHNICAL FIELD

[0001] The present disclosure relates generally to power semiconductor modules and methods for manufacturing power semiconductor modules. BACKGROUND

[0002] Power semiconductor modules are used in various applications, for example in the automotive industry. It can be desirable to operate power semiconductor modules with low power margins in a wide temperature range. It can also be desirable to measure the junction temperature of power chips included in the power semiconductor modules, for example to improve operating efficiency. However, adding temperature sensors to power semiconductor modules can complicate the electrical wiring and can increase the stray inductance in the power semiconductor modules. Placing temperature sensors at the periphery of the power semiconductor modules can reduce these problems, but can result in incorrect or slow temperature readings. New concepts for power semiconductor modules and new methods for manufacturing power semiconductor modules can help overcome these problems.

[0003] The problems on which the invention is based are solved by the features of the independent claims. Further advantageous examples are described in the dependent claims. SUMMARY

[0004] Aspects relate to a power semiconductor module comprising: a power semiconductor chip arranged between a first and a second substrate and electrically coupled to the first and the second substrate; and a temperature sensor arranged between the first and the second substrate and laterally arranged next to the power semiconductor chip such that a first side of the temperature sensor faces the first substrate and a second side of the temperature sensor faces the second substrate, wherein a first electrical contact of the temperature sensor is arranged on the first side and electrically coupled to the first substrate, and wherein a second electrical contact of the temperature sensor is arranged on the second side and electrically coupled to the second substrate.

[0005] Aspects relate to a power semiconductor module comprising: a power semiconductor chip arranged between a first and a second substrate and electrically coupled to the first and the second substrate; and a temperature sensor arranged between the power semiconductor chip and the second substrate such that a first side of the temperature sensor faces the power semiconductor chip and a second side of the temperature sensor faces the second substrate, wherein first and second electrical contacts of the temperature sensor are arranged on the second side and electrically coupled to the second substrate.

[0006] Aspects relate to a method for manufacturing a power semiconductor module, the method comprising: arranging a power semiconductor chip between a first and a second substrate and electrically coupling the power semiconductor chip to the first and the second substrate, and arranging a temperature sensor between the first and the second substrate and laterally next to the power semiconductor chip, such that a first side of the temperature sensor faces the first substrate and a second side of the temperature sensor faces the second substrate, wherein a first electrical contact of the temperature sensor is arranged on the first side and electrically coupled to the first substrate, and wherein a second electrical contact of the temperature sensor is arranged on the second side and electrically coupled to the second substrate.

[0007] Aspects relate to a method for manufacturing a power semiconductor module, the method comprising: arranging a power semiconductor chip between a first and a second substrate and electrically coupling the power semiconductor chip to the first and the second substrate, and arranging a temperature sensor between the power semiconductor chip and the second substrate, such that a first side of the temperature sensor faces the power semiconductor chip and a second side of the temperature sensor faces the second substrate, wherein first and second electrical contacts of the temperature sensor are arranged on the second side and electrically coupled to the second substrate. BRIEF DESCRIPTION OF DRAWINGS

[0008] The accompanying drawings illustrate examples and, together with the description, explain the principles of the disclosure. Other examples and many of the intended advantages of the present disclosure will be readily appreciated as they become better understood by reference to the following detailed description. The elements of the drawings are not necessarily to scale relative to each other. Like reference numerals designate corresponding similar parts.

[0009] Figure 1 A side view of a first power semiconductor module is shown, wherein the temperature sensor is arranged laterally next to the power semiconductor chip.

[0010] Figure 2 A side view of a second power semiconductor module is shown, wherein the temperature sensor is arranged laterally next to the power semiconductor chip and between two heat sinks.

[0011] Figure 3 A side view of a third power semiconductor module is shown, wherein the temperature sensor is arranged on top of the power semiconductor chip.

[0012] Figure 4 A side view of a fourth power semiconductor module is shown, wherein the temperature sensor is arranged on top of an insulation layer above the power semiconductor chip.

[0013] Figure 5 A flow chart of a method for manufacturing a power semiconductor module is shown.

[0014] Figure 6A flow chart showing another method for manufacturing a power semiconductor module is shown. DETAILED DESCRIPTION

[0015] In the following detailed description, reference is made to the accompanying drawings. However, it is to be understood that the aspects of the disclosure can be practiced without these specific details. In other instances, well-known structures and elements have not been described in detail in order to avoid obscuring the aspects of the disclosure. As an example, directional terms such as "top," "bottom," "front," "back," "leading," "trailing" and the like can be used with reference to the orientation of the described figures. Because components of the disclosure can be positioned in a number of different orientations, the directional terminology is used for purposes of illustration only.

[0016] The terms "coupled" and "connected," along with their derivatives, can be used. It should be understood that these terms are not intended as synonyms for each other. Rather, these terms can be used in conjunction with each other to indicate that two elements co-operate or interact with each other, without being in physical or electrical contact with each other, or that the elements are not in direct contact with each other; an intervening element or layer can be present between the "coupled," "attached," or "connected" elements. However, the "coupled," "attached," or "connected" elements can also be in direct contact with each other.

[0017] The semiconductor chip(s) described below can be made of a specific semiconductor material (e.g. Si, SiC, SiGe, GaAs, GaN) or any other semiconductor material. The power semiconductor module described below can comprise AC / DC or DC / DC converter circuits, power MOS transistors, power Schottky diodes, JFET (Junction Gate Field Effect Transistor), power bipolar transistors, logic integrated circuits, etc.

[0018] Figure 1 A side view of a power semiconductor module 100 is shown, comprising a first substrate 101 and a second substrate 102, a power semiconductor chip 103 and a temperature sensor 104. The first and second substrates 101, 102 are arranged opposite to each other, and the power semiconductor chip 103 is arranged between the first and second substrates 101, 102 and electrically coupled to the first and second substrates 101, 102.

[0019] The temperature sensor 104 includes a first side 104_1 and an opposing second side 104_2, wherein the temperature sensor 104 is disposed between the first and second substrates 101 and 102, laterally located next to the power semiconductor chip 103, such that the first side 104_1 faces the first substrate 101 and the second side 104_2 faces the second substrate 102. Furthermore, a first electrical contact 105 of the temperature sensor 104 is disposed on the first side 104_1 and electrically coupled to the first substrate 101, and a second electrical contact 106 of the temperature sensor 104 is disposed on the second side 104_2 and electrically coupled to the second substrate 102.

[0020] The power semiconductor module 100 can be configured to handle high current and / or high voltage and may include, for example, a half-bridge circuit, a single-pole switch, or a three-phase circuit. The power semiconductor module 100 can be configured for use in a vehicle (e.g., an automobile). The power semiconductor module 100 may include external contacts, such as power contacts and control contacts. According to an example, the power contacts include those configured to couple to a positive supply voltage (V). DD The external contacts include a first power contact, a second power contact configured to couple to a negative power supply voltage (Vss), and a third power contact configured as a phase. External contacts may be disposed between the first and second substrates 101, 102, for example, on the first substrate 101 and / or the second substrate 102, and may be soldered or sintered to the first and / or second substrates 101, 102, for example. External contacts may be part of a lead frame.

[0021] The power semiconductor module 100 can be configured for dual-sided cooling. In other words, the power semiconductor module 100 can be configured to be cooled at a first substrate 101 and also at a second substrate 102. For example, a first heat sink can be disposed on the first substrate 101, and a second heat sink can be disposed on the second substrate 102. The heat sinks (one or more) may include metal plates, cooling channels including cooling fluid, etc. The first and / or second substrates 101, 102 can be directly coupled to the heat sinks (one or more), or the first and / or second substrates 101, 102 can be indirectly coupled to the heat sinks (one or more) via a thermal interface material layer.

[0022] The power semiconductor module 100 can have any suitable size and shape, and can have edge lengths of, for example, 1 cm or longer, 5 cm or longer, 10 cm or longer, etc. The power semiconductor module 100 can also have any suitable total thickness t1. For example, the total thickness t1 can be 1.5 cm or less, 1.2 cm or less, or 0.8 cm or less. Furthermore, for example, the thickness t2 measured between the first and second substrates 101, 102 can be 1.2 cm or less, 1 cm or less, 0.75 cm or less, or 0.65 cm or less.

[0023] For example, the first substrate 101 and / or the second substrate 102 can be DCB (Direct Copper Bond), DAB (Direct Aluminum Bond), AMB (Active Metal Brazing), PCB (Printed Circuit Board), or a lead frame. The first and second substrates 101 and 102 can be of the same type or different types. The power semiconductor chip 103 and the temperature sensor 104 can both be electrically coupled to the conductive lines of the first substrate 101 and the second substrate 102. The external contacts of the power semiconductor module 100 can also be electrically coupled to these conductive lines.

[0024] For example, the power semiconductor chip 103 can be a FET (Field-Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor). The power semiconductor chip 103 can include a vertical transistor structure, wherein a first power electrode is disposed on a first side (facing the first substrate 101) and a second power electrode is disposed on a second side (facing the second substrate 102). For example, the first power electrode can be electrically coupled to the first substrate 101 using a solder joint or a sintered joint. For example, the second power electrode can be electrically coupled to the second substrate 102 using a solder joint or a sintered joint.

[0025] According to the example, a conductive spacer may be disposed between the second electrode and the second substrate 102. For example, the conductive spacer may include a metal block such as a Cu block.

[0026] The power semiconductor chip 103 may include a control electrode, such as a gate electrode, disposed on the second side. For example, the control electrode may be electrically coupled to the second substrate 102 using a solder joint or a sintered joint. Another conductive spacer may be disposed between the control electrode and the second substrate 102. For example, the other conductive spacer may include a solder ball. Alternatively, the control electrode may also be electrically coupled to the first substrate 101, for example, using bonding wires.

[0027] Temperature sensor 104 can be any suitable type of temperature sensor. For example, temperature sensor 104 may include a thermistor, which is a resistor having a resistance that is temperature-dependent. For example, temperature sensor 104 may include an NTC (negative thermal coefficient).

[0028] The temperature sensor 104 can be arranged vertically in the power semiconductor module 100, meaning that the first electrical contact 105 faces the first substrate and the second electrical contact 106 faces the second substrate. Furthermore, a current or voltage drop along the temperature sensor 104 can occur between the first and second substrates 101, 102.

[0029] The first electrical contact 105 can be electrically coupled to the first external control contact of the power semiconductor module 100 via the first substrate 101, and the second electrical contact 106 can be electrically coupled to the second external control contact of the power semiconductor module 100 via the second substrate 102. According to an example, both the first and second external control contacts are arranged (e.g., side by side) on the first substrate 101 or the second substrate 102.

[0030] Temperature sensor 104 can be electrically coupled to first substrate 101 using a solder joint or a sintered joint, and temperature sensor 104 can be electrically coupled to second substrate 102 using another solder joint or sintered joint. According to an example, conductive spacers are disposed between first substrate 101 and first electrical contact 105 and / or conductive spacers are disposed between second electrical contact 106 and second substrate 102. For example, one or more conductive spacers may comprise metal blocks such as Cu blocks. One or more conductive spacers may be configured to act as heat sinks.

[0031] Temperature sensor 104 can be substantially "flat", meaning that temperature sensor 104 can have a length and width perpendicular to the t1 direction, which is greater than its thickness along t1. For example, temperature sensor 104 can have a length and width of 2 mm or less, 1.5 mm or less, or 1 mm or less. For example, temperature sensor 104 can have a thickness of 1 mm or less, 0.5 mm or less, or 0.2 mm or less.

[0032] Temperature sensor 104 and power semiconductor chip 103 are not monolithically constructed. Instead, temperature sensor 104 is a separate component and is arranged laterally next to power semiconductor chip 103, for example, at a defined distance. The exact distance between temperature sensor 104 and power semiconductor chip 103 can be a trade-off between placing temperature sensor 104 as close as possible to power semiconductor chip 103 to improve the accuracy of temperature sensing and requiring electrical wiring for power semiconductor chip 103 to be provided on the first and second substrates 101, 102.

[0033] According to the example, the power semiconductor module 100 includes a first power semiconductor chip and a second power semiconductor chip (e.g., power semiconductor chip 103). The first power semiconductor chip may be a high-side switch (e.g., a half-bridge circuit), and the second power semiconductor chip may be a low-side switch (e.g., a half-bridge circuit). In this case, a temperature sensor 104 may be arranged next to the low-side switch and may be configured to measure the junction temperature at the low-side switch. Placing the temperature sensor 104 close to the low-side switch rather than the high-side switch reduces the required electrical insulation between the temperature sensor 104 and the corresponding power semiconductor chip.

[0034] According to the example, the power semiconductor module 100 may also include a molded body ( Figure 1 (Not shown in the image). For example, a molding body may be disposed between the first and second substrates 101, 102. The molding body may encapsulate the power semiconductor chip 103 and may also encapsulate the temperature sensor 104. The molding body may also be disposed in the gap between the temperature sensor 104 and the power semiconductor chip 103. The outer surfaces of the first and second substrates 101, 102 that are opposite to the power semiconductor chip 103 and the temperature sensor 104 may not be covered by the molding body.

[0035] Temperature sensor 104 can be configured to measure the temperature within power semiconductor module 100. For example, power semiconductor chip 103 may generate a certain amount of heat depending on its current operating load, and temperature sensor 104 can be configured to measure the current chip temperature. It is desirable to measure the temperature of power semiconductor chip 103 very accurately (e.g., within ±2% to 5% error margin) and with a very small time delay (e.g., less than microseconds). This makes it possible to operate power semiconductor module 100 over a wide temperature range using only a small power margin. It must be considered that a wide power margin may increase the cost of the power semiconductor module because a larger, more expensive power region of the power semiconductor chip must be provided for this.

[0036] Temperature sensor 104 is electrically coupled to both substrates 101 and 102, and therefore requires less space on each individual substrate 101 and 102 (especially less space for electrical wiring) compared to sensors whose two contacts are coupled to the same substrate. Temperature sensor 104 also requires less vertical space (along the t1 direction) compared to a conventional temperature sensor (which can have a height of 1.2 mm along the t1 direction).

[0037] Using separate temperature sensor 104 and power semiconductor chip 103, instead of integrating both components monolithically into a single chip, can help save costs. For example, the power semiconductor chip 103 may include SiC, which may be several times more expensive than the materials that make up the temperature sensor 104.

[0038] Figure 2 A side view of another power semiconductor module 200 is shown. Except for the differences described below, power semiconductor module 200 may be similar to or the same as power semiconductor module 100.

[0039] The power semiconductor module 200 includes first and second substrates 101 and 102, a power semiconductor chip 103, and a temperature sensor 104. Furthermore, the power semiconductor module 200 may include a first conductive spacer 201, a second conductive spacer 202, and a third conductive spacer 203.

[0040] The first and second conductive spacers 201, 202 may also be referred to as “heat sinks” and they may be configured to distribute the heat generated by the power semiconductor chip 103 across the temperature sensor 104.

[0041] A first conductive spacer 201 may be disposed between a temperature sensor 104 (especially a first electrical contact 105) and a first substrate 101, and a second conductive spacer 202 may be disposed between a temperature sensor 104 (especially a second electrical contact 106) and a second substrate 102. A third conductive spacer 203 may be disposed between a power semiconductor chip 103 (especially a power electrode) and a second substrate 102. Conductive spacers 201, 202, and 203 may be coupled to the first and / or second substrates 101, 102 using solder joints or sintered joints. Conductive spacers 201, 202, and 203 may be coupled to the temperature sensor 104 and the power semiconductor chip 103 using solder joints or sintered joints, respectively. According to an example, at least some solder joints may include diffused solder. Conductive spacers 201, 202, and 203 may be metal blocks and may include suitable metals or metal alloys such as Al or Cu.

[0042] According to the example, the first and second conductive spacers 201, 202 can have a smaller lateral dimension than the temperature sensor 104. In particular, the temperature sensor 104 can be, for example... Figure 2 The portions extend beyond the perimeters of the first and second conductive spacers 201 and 202 in all lateral directions shown. This reduces the risk of voltage arcing between the first and second conductive spacers 201 and 202.

[0043] Conversely, according to another example, conductive spacers 201, 202 may have a larger lateral dimension than temperature sensor 104, and in particular may extend beyond the perimeter of temperature sensor 104 in all lateral directions.

[0044] The power semiconductor module 200 may also include one or more contact balls 204 disposed between the power semiconductor chip 103 and the second substrate 102. For example, the contact balls(s) 204 may be made of a bonding material. The one or more contact balls 204 may be configured to couple one or more control electrodes (e.g., gate electrodes) on the power semiconductor chip 103 to the second substrate 102. According to one example, bonding wires are used instead of contact balls. According to yet another example, one or more other conductive spacers are used instead of contact balls.

[0045] Figure 3 A side view of another power semiconductor module 300 is shown, which may be similar to or the same as power semiconductor modules 100 and 200, except for the differences described below.

[0046] Unlike the horizontally side-by-side arrangement shown for power semiconductor modules 100 and 200, in power semiconductor module 300, temperature sensor 301 is disposed on top of power semiconductor chip 103. The first side of temperature sensor 301 faces power semiconductor chip 103, and the opposite second side faces second substrate 102.

[0047] The power semiconductor module 300 includes a conductive spacer 302 that couples the power electrodes of the power semiconductor chip 103 to the second substrate 102. The conductive spacer 302 includes a cavity 304 and a temperature sensor 301 is disposed within the cavity 304. Except for the cavity 304, the conductive spacer 302 may be the same as the third conductive spacer 203 of the power semiconductor module 200.

[0048] For example, cavity 304 may have the form of a step, cutout, or generally rectangular indentation in conductive spacer 302. Cavity 304 may be disposed at the distal end of conductive spacer facing second substrate 102, such that temperature sensor 301 within cavity can be coupled to second substrate 102. For example, temperature sensor 301 may be in direct contact with second substrate 102. Conductive spacer 302 may be configured such that current can flow through conductive spacer 302 laterally adjacent to cavity 304 between power semiconductor chip 103 and second substrate 102.

[0049] An insulating layer 303 may be disposed between the conductive spacer 302 and the temperature sensor 301. The insulating layer 303 may be configured to electrically insulate the temperature sensor 301 from the conductive spacer 302 (and also from the power semiconductor chip 103). For example, the insulating layer 303 may comprise a polymer, plastic, or ceramic. The insulating layer 303 may be thick enough to effectively insulate the temperature sensor 301 from the conductive spacer 302.

[0050] According to one example, the insulating layer 303 may be provided on the temperature sensor 301. During the fabrication of the power semiconductor module 300, the temperature sensor 300, to which the insulating layer 303 has been applied, is arranged within the cavity 304. According to another example, the insulating layer 303 is provided on the surface of the cavity 304. In this case, during the fabrication of the power semiconductor module 300, the temperature sensor 301 is arranged in the cavity 304 on top of the insulating layer 303. In any case, providing the insulating layer 303 may include depositing the insulating layer 303 using a suitable surface coating technique.

[0051] According to the example, the temperature sensor 301 can be provided in the form of an encapsulated die (e.g., an encapsulated NTC), and the insulating layer 303 can correspond to the encapsulation body.

[0052] As an example, when the insulating layer 303 is provided on the temperature sensor 301, it may be necessary to trim the insulating layer 303 so that the temperature sensor 301 fits neatly into the cavity 304. For example, trimming may include laser trimming to achieve high precision.

[0053] The insulating layer 303 may cover the temperature sensor 303 only on those sides facing the conductive spacer 302. However, according to the example, the insulating layer 303 may also cover additional sides of the temperature sensor 301, in particular all sides.

[0054] Temperature sensor 301 may include a first electrical contact 305 and a second electrical contact 306. The first and second electrical contacts 305 and 306 may both be disposed on the second side of temperature sensor 301 facing the second substrate 102. The first and second electrical contacts 305 and 306 may be coupled to conductive lines on the second substrate 102. When the insulating layer 303 covers the second side of temperature sensor 301, the first and second electrical contacts 305 and 306 may be exposed at the insulating layer 303.

[0055] In contrast to temperature sensor 104, temperature sensor 301 may not include electrical contacts on the opposite side, but only on one side (e.g., the second side described above). Therefore, the current or voltage drop through temperature sensor 301 may occur in the horizontal direction (perpendicular to t1) rather than the vertical direction.

[0056] Apart from the differences described above, temperature sensor 301 may be the same as temperature sensor 104 of power semiconductor modules 100 and 200.

[0057] Placing the temperature sensor 301 above the power semiconductor chip 103 provides the benefit of very fast and accurate measurement of the junction temperature. The temperature sensor 301 is also less affected by thermal stray fields within the power semiconductor module 300. The arrangement of the temperature sensor 301 within the power semiconductor module 300 also occupies less space than other arrangements (e.g., lateral arrangements). Furthermore, according to the example, the temperature sensor 301 can be arranged within the cavity 304 without a soldering step.

[0058] Figure 4 A side view of another power semiconductor module 400 is shown, which may be similar to or the same as power semiconductor module 300, except for the differences described below.

[0059] In the power semiconductor module 400, the temperature sensor 301 is not disposed within the cavity of the conductive spacer. Instead, the temperature sensor 301 is disposed on an insulating carrier 401. The insulating carrier 401 is disposed between the power semiconductor chip 103 and the second substrate 102 and can be configured to electrically insulate the temperature sensor 301 from the power semiconductor chip 103. Furthermore, the conductive spacer 402 can be disposed between the power semiconductor chip 103 and the second substrate 102 (laterally next to the insulating carrier 401).

[0060] Temperature sensor 301 can be disposed on insulating carrier 401 such that temperature sensor 301 is in direct contact with second substrate 102. Temperature sensor 301 (especially electrical contacts 305, 306) can be coupled to second substrate 102 using solder joints or sintered joints. When using solder joints, any suitable solder can be used, for example, diffused solder.

[0061] The insulating carrier 401 may include or be made of any suitable electrically insulating material. For example, the insulating carrier 401 may include or be made of ceramic, plastic, or polymer. The insulating carrier 401 may be made of a material bonding block. For example, the insulating carrier 401 may be arranged on the power semiconductor chip 103 using a pick-and-place process. According to an example, the insulating carrier 401 may be attached to the power semiconductor chip 103 using, for example, an adhesive. Furthermore, for example, a temperature sensor 301 may be attached to the insulating carrier 401 using an adhesive.

[0062] The conductive spacer 402 can be the same as the conductive spacer 302 of the power semiconductor module 300, except that it is not required to include a cavity for the temperature sensor 401.

[0063] The insulating carrier 401 and the conductive spacer 402 may be adjacent to each other, or a gap may exist between them. Additionally, a gap may also exist between the temperature sensor 301 and the conductive spacer 402. The power semiconductor module 400 may include a molded body, and molding material may be disposed in the gap between the insulating carrier 401 and the conductive spacer 402 and / or in the gap between the temperature sensor 301 and the conductive spacer 402.

[0064] It might be easier to arrange the temperature sensor 301 on the insulating carrier 401 rather than in the cavity 304 compared to the power semiconductor module 300. However, the arrangement of the temperature sensor 301 within the power semiconductor module 400 can still provide the very fast and accurate temperature measurement benefits mentioned regarding the power semiconductor module 300.

[0065] Figure 5 A flowchart of a method 500 for manufacturing a power semiconductor module is shown. For example, method 500 can be used to manufacture power semiconductor modules 100 and 200.

[0066] Method 500 includes: at 501, arranging a power semiconductor chip between and electrically coupling the power semiconductor chip to the first and second substrates; and at 502, arranging a temperature sensor between and laterally next to the power semiconductor chip, such that a first side of the temperature sensor faces the first substrate and a second side of the temperature sensor faces the second substrate, wherein a first electrical contact of the temperature sensor is arranged on the first side and electrically coupled to the first substrate, and wherein a second electrical contact of the temperature sensor is arranged on the second side and electrically coupled to the second substrate.

[0067] According to the example, method 500 further includes arranging a first heat sink between a first side of the temperature sensor and a first substrate, and arranging a second heat sink between a second side and a second substrate.

[0068] Figure 6 A flowchart of another method 600 for manufacturing a power semiconductor module is shown. For example, method 600 can be used to manufacture power semiconductor modules 300 and 400.

[0069] Method 600 includes: at 601, arranging a power semiconductor chip between a first and a second substrate and electrically coupling the power semiconductor chip to the first and a second substrate; and at 602, arranging a temperature sensor between the power semiconductor chip and the second substrate such that a first side of the temperature sensor faces the power semiconductor chip and a second side of the temperature sensor faces the second substrate, wherein first and second electrical contacts of the temperature sensor are arranged on the second side and electrically coupled to the second substrate.

[0070] According to the example, method 600 further includes arranging a conductive spacer between the power semiconductor chip and the second substrate and using the spacer to electrically couple the power electrodes of the power semiconductor chip to the second substrate.

[0071] Example

[0072] The following text uses specific examples to further explain power semiconductor modules and methods for manufacturing power semiconductor modules.

[0073] Example 1 is a power semiconductor module comprising: a power semiconductor chip disposed between and electrically coupled to the first and second substrates; and a temperature sensor disposed between and laterally disposed next to the power semiconductor chip, such that a first side of the temperature sensor faces the first substrate and a second side of the temperature sensor faces the second substrate, wherein a first electrical contact of the temperature sensor is disposed on the first side and electrically coupled to the first substrate, and wherein a second electrical contact of the temperature sensor is disposed on the second side and electrically coupled to the second substrate.

[0074] Example 2 is the power semiconductor module of Example 1, and further includes: a first heat sink and a second heat sink, the first heat sink being disposed between a first side of the temperature sensor and a first substrate, and the second heat sink being disposed between a second side and a second substrate.

[0075] Example 3 is a power semiconductor module of Example 2, wherein the first heat sink is a first metal block, and wherein the second heat sink is a second metal block.

[0076] Example 4 is a power semiconductor module of Example 2 or 3, wherein the temperature sensor extends beyond the perimeter of the first and second heat sinks in all lateral directions.

[0077] Example 5 is a power semiconductor module of any of Examples 2 to 4, wherein a temperature sensor is coupled to a first and a second heat sink using a diffused solder.

[0078] Example 6 is a power semiconductor module of any of the preceding examples, wherein the temperature sensor includes a resistor with a negative thermal coefficient.

[0079] Example 7 is a power semiconductor module of any of the preceding examples, wherein the first and second substrates are substrates of one of the following types: direct copper bonding, direct aluminum bonding, or active metal brazing.

[0080] Example 8 is a power semiconductor module comprising: a power semiconductor chip disposed between and electrically coupled to the first and second substrates; and a temperature sensor disposed between the power semiconductor chip and the second substrate, such that a first side of the temperature sensor faces the power semiconductor chip and a second side of the temperature sensor faces the second substrate, wherein first and second electrical contacts of the temperature sensor are disposed on the second side and electrically coupled to the second substrate.

[0081] Example 9 is a power semiconductor module of Example 8, further comprising: a conductive spacer disposed between a power semiconductor chip and a second substrate and electrically coupling the power electrodes of the power semiconductor chip to the second substrate.

[0082] Example 10 is a power semiconductor module of Example 9, wherein a temperature sensor is arranged in a cavity within a spacer.

[0083] Example 11 is a power semiconductor module of Example 10, further comprising: an electrically insulating layer formed between the temperature sensor and the spacer to electrically insulate the temperature sensor from the spacer.

[0084] Example 12 is a power semiconductor module of Example 9, further comprising: an electrically insulating carrier disposed between the power semiconductor chip and the second substrate and laterally next to the spacer, wherein a temperature sensor is disposed on the carrier and electrically insulated from the power semiconductor chip by the carrier.

[0085] Example 13 is a power semiconductor module of Example 12, wherein the carrier comprises or is made of ceramic.

[0086] Example 14 is a power semiconductor module of any of the preceding examples, further comprising: solder balls disposed between a power semiconductor chip and a second substrate and electrically coupling the control electrodes of the power semiconductor chip to the second substrate.

[0087] Example 15 is a method for manufacturing a power semiconductor module, the method comprising: arranging a power semiconductor chip between first and second substrates and electrically coupling the power semiconductor chip to the first and second substrates; and arranging a temperature sensor between the first and second substrates and laterally next to the power semiconductor chip, such that a first side of the temperature sensor faces the first substrate and a second side of the temperature sensor faces the second substrate, wherein a first electrical contact of the temperature sensor is arranged on the first side and electrically coupled to the first substrate, and wherein a second electrical contact of the temperature sensor is arranged on the second side and electrically coupled to the second substrate.

[0088] Example 16 is a method of Example 15, further comprising: arranging a first heat sink between a first side of the temperature sensor and a first substrate, and arranging a second heat sink between a second side and a second substrate.

[0089] Example 17 is a method for manufacturing a power semiconductor module, the method comprising: arranging a power semiconductor chip between first and second substrates and electrically coupling the power semiconductor chip to the first and second substrates, and arranging a temperature sensor between the power semiconductor chip and the second substrates such that a first side of the temperature sensor faces the power semiconductor chip and a second side of the temperature sensor faces the second substrate, wherein first and second electrical contacts of the temperature sensor are arranged on the second side and electrically coupled to the second substrate.

[0090] Example 18 is a method of Example 17, further comprising: arranging a conductive spacer between a power semiconductor chip and a second substrate, and using the spacer to electrically couple a power electrode of the power semiconductor chip to the second substrate.

[0091] Example 19 is an apparatus that includes a module for performing the method of any one of Examples 15 to 18.

[0092] Although this disclosure has been shown and described with respect to one or more embodiments, changes and / or modifications may be made to the examples shown without departing from the spirit and scope of the appended claims. In particular, the terminology used to describe such components (including references to “module”) is intended to correspond to any component or structure that performs the specified function of said component (i.e., functionally equivalent), even if it is not structurally equivalent to the disclosed structure that performs the functions in the exemplary embodiments of this disclosure shown herein.

Claims

1. A power semiconductor module, comprising: A power semiconductor chip, wherein the power semiconductor chip is disposed between and electrically coupled to the first substrate and the second substrate. A temperature sensor is disposed between the power semiconductor chip and the second substrate, such that a first side of the temperature sensor faces the power semiconductor chip and a second side of the temperature sensor faces the second substrate, wherein a first electrical contact and a second electrical contact of the temperature sensor are disposed on the second side and electrically coupled to the second substrate. A conductive spacer is disposed between the power semiconductor chip and the second substrate, and electrically couples the power electrode of the power semiconductor chip to the second substrate, wherein the temperature sensor is disposed within a cavity in the conductive spacer.

2. The power semiconductor module according to claim 1, further comprising: An electrical insulating layer is formed between the temperature sensor and the conductive spacer to electrically insulate the temperature sensor from the conductive spacer.

3. The power semiconductor module according to claim 1, wherein, The temperature sensor includes a resistor with a negative thermal coefficient.

4. The power semiconductor module according to claim 1, wherein, The first substrate and the second substrate are substrates of one of the following types: direct copper bonding, direct aluminum bonding, or active metal brazing.

5. The power semiconductor module according to claim 1, further comprising: Solder balls are disposed between the power semiconductor chip and the second substrate, and electrically couple the control electrode of the power semiconductor chip to the second substrate.

6. A power semiconductor module, comprising: A power semiconductor chip, wherein the power semiconductor chip is disposed between and electrically coupled to the first substrate and the second substrate. A temperature sensor is disposed between the power semiconductor chip and the second substrate, such that a first side of the temperature sensor faces the power semiconductor chip and a second side of the temperature sensor faces the second substrate, wherein a first electrical contact and a second electrical contact of the temperature sensor are disposed on the second side and electrically coupled to the second substrate. A conductive spacer is disposed between the power semiconductor chip and the second substrate, and electrically couples the power electrodes of the power semiconductor chip to the second substrate. An electrically insulating carrier is disposed between the power semiconductor chip and the second substrate, laterally adjacent to the conductive spacer. The temperature sensor is disposed on the electrically insulating carrier and is electrically insulated from the power semiconductor chip through the electrically insulating carrier.

7. The power semiconductor module according to claim 6, wherein, The electrical insulating carrier includes or is made of ceramic.

8. A power semiconductor module, comprising: A power semiconductor chip, wherein the power semiconductor chip is disposed between and electrically coupled to the first substrate and the second substrate. A temperature sensor is disposed between a first substrate and a second substrate and laterally adjacent to the power semiconductor chip, such that a first side of the temperature sensor faces the first substrate and a second side of the temperature sensor faces the second substrate. A first electrical contact of the temperature sensor is disposed on the first side and electrically coupled to the first substrate, and a second electrical contact of the temperature sensor is disposed on the second side and electrically coupled to the second substrate. A first heat sink and a second heat sink, the first heat sink being disposed between a first side of the temperature sensor and a first substrate, and the second heat sink being disposed between a second side and a second substrate, wherein the temperature sensor extends beyond the perimeter of the first heat sink and the second heat sink in all lateral directions.

9. The power semiconductor module according to claim 8, wherein, The first heat sink is a first metal block, and the second heat sink is a second metal block.

10. The power semiconductor module according to claim 8 or 9, wherein, The temperature sensor is coupled to the first heat sink and the second heat sink using diffused solder.

11. The power semiconductor module according to claim 8 or 9, wherein, The temperature sensor includes a resistor with a negative thermal coefficient.

12. The power semiconductor module according to claim 8 or 9, wherein, The first substrate and the second substrate are substrates of one of the following types: direct copper bonding, direct aluminum bonding, or active metal brazing.

13. The power semiconductor module according to claim 8 or 9, further comprising: Solder balls are disposed between the power semiconductor chip and the second substrate, and electrically couple the control electrode of the power semiconductor chip to the second substrate.

14. A method for manufacturing a power semiconductor module, the method comprising: A power semiconductor chip is disposed between a first substrate and a second substrate, and the power semiconductor chip is electrically coupled to the first substrate and the second substrate. A temperature sensor is disposed laterally between the first substrate and the second substrate, adjacent to the power semiconductor chip, such that a first side of the temperature sensor faces the first substrate and a second side of the temperature sensor faces the second substrate. A first electrical contact of the temperature sensor is disposed on the first side and electrically coupled to the first substrate, and a second electrical contact of the temperature sensor is disposed on the second side and electrically coupled to the second substrate. A first heat sink is disposed between the first side of the temperature sensor and the first substrate, and a second heat sink is disposed between the second side and the second substrate, wherein the temperature sensor extends beyond the perimeter of the first heat sink and the second heat sink in all lateral directions.

15. A method for manufacturing a power semiconductor module, the method comprising: A power semiconductor chip is disposed between a first substrate and a second substrate, and the power semiconductor chip is electrically coupled to the first substrate and the second substrate. A temperature sensor is disposed between the power semiconductor chip and the second substrate, such that a first side of the temperature sensor faces the power semiconductor chip and a second side of the temperature sensor faces the second substrate, wherein a first electrical contact and a second electrical contact of the temperature sensor are disposed on the second side and electrically coupled to the second substrate. A conductive spacer is disposed between the power semiconductor chip and the second substrate, and the power electrode of the power semiconductor chip is electrically coupled to the second substrate using the conductive spacer, wherein the temperature sensor is disposed within a cavity in the conductive spacer.

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