Semiconductor process components and semiconductor processing equipment

Abstract

The present invention provides a semiconductor process component and semiconductor processing equipment, the semiconductor process component includes a pressure ring, the pressure ring is used to press the edge area of ​​the upper surface of the wafer when the base is located at the process position; it also includes: an air intake structure, which is arranged below the pressure ring along the circumference of the pressure ring, when the base is located at the process position, there is a diffusion channel between the air intake structure and the pressure ring that is connected to the upper space of the base; and a plurality of air intake channels are arranged in the air intake structure, the outlet ends of the plurality of air intake channels are connected to the diffusion channel, and are evenly distributed along the circumference of the pressure ring; a gas supply device is used to transport process gas to each of the air intake channels, after the process gas flows out of the air intake channel, it enters the upper space of the base through the diffusion channel. Through the present invention, the problem of uneven plasma energy caused by the different lengths of the gas paths reaching the substrate surface is solved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing, and in particular, to a semiconductor process component and semiconductor processing equipment. Background Art

[0002] At present, PVD (Physical Vapor Deposition) plays an irreplaceable role in the manufacturing process of integrated circuits. Almost all semiconductor devices use PVD for their subsequent metal interconnection during their manufacturing process. Metal interconnection plays the role of providing electronic signals and micro-wiring for each device in the chip. The PVD process is generally carried out in a high vacuum chamber. There is a base in the chamber to support the wafer on it; the material on which the wafer is sputtered, that is, the target material, is fixed on the top of the chamber, and the magnetron is installed on the back of the target material to generate a magnetic field to enhance the ability to bind electrons. Process gas is introduced into the side wall of the chamber, and a negative voltage is applied to the target material, so that the process gas is ionized to generate plasma. The plasma hits the target material to generate atoms or ions of the target material, and these atoms or ions are deposited on the wafer to form a thin film.

[0003] like Figure 1 A schematic diagram of a PVD chamber structure in the prior art is shown, in which a shielding member 1' is overlapped on an inner liner 2', and the inner liner 2' is overlapped on an adapter 3', and the adapter 3' is installed in the chamber; a base 4' is used to carry a substrate 5', and the shielding member 1' is raised to a corresponding process position as the base 4' moves, so that the shielding member 1' is separated from the inner liner 2', and the process gas enters the chamber below the base 4' from an air inlet pipe 6' on the side wall of the chamber, and further enters the chamber between the target 7' and the base 4' from a gap between the shielding member 1' and the flange of the inner liner 2. When a negative voltage is applied to the target 7', the process gas generates plasma, and under the action of the negative voltage of the target 7', the plasma strikes the target 7' to generate atoms or ions, which are eventually deposited on the substrate 5' to form a thin film.

[0004] Obviously, since the process gas enters the chamber through the air inlet pipe on the chamber side wall, the gas path reaching the surface of the substrate 5' is of different lengths, which can easily lead to uneven energy of the excited plasma and eccentricity of the deposited film. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a semiconductor process component and a semiconductor processing equipment to solve the problem of uneven plasma energy caused by the different lengths of gas paths reaching the substrate surface.

[0006] To achieve the purpose of the present invention, a semiconductor process assembly is provided, comprising a pressure ring, the pressure ring being used to press the edge area of ​​the upper surface of the wafer when the base is located at the process position; and further comprising:

[0007] An air intake structure is arranged below the pressure ring along the circumference of the pressure ring, and when the base is located at the process position, a diffusion channel connected to the upper space of the base exists between the air intake structure and the pressure ring; and a plurality of air intake channels are arranged in the air intake structure, and the outlet ends of the plurality of air intake channels are all connected to the diffusion channel and are evenly distributed along the circumference of the pressure ring;

[0008] The gas supply device is used to transport process gas to each of the gas inlet channels. After the process gas flows out of the gas inlet channels, it enters the space above the base through the diffusion channel.

[0009] Preferably, it further comprises an inner liner, wherein the inner liner has a flange structure that bends inward from its lower end and extends upward, and the flange structure is used to support the pressure ring when the base descends;

[0010] The air inlet structure is formed in the flange structure, and when the base is located at the process position, the diffusion channel is formed between the flange structure and the pressure ring; and the air inlet channel is provided in the flange structure.

[0011] Preferably, it further comprises an inner liner, wherein the inner liner has a flange structure that bends inward from its lower end and extends upward, and the flange structure is used to support the pressure ring when the base descends;

[0012] The air intake structure is arranged on the side wall of the flange structure and is fixedly connected to the side wall of the flange structure.

[0013] Preferably, it further comprises an inner liner, wherein the inner liner has a flange structure that bends inward from its lower end and extends upward, and the flange structure is used to support the pressure ring when the base descends;

[0014] The air intake structure is fixedly connected to the lower surface of the pressure ring; or, the air intake structure is fixedly connected to the side wall of the base;

[0015] The air intake structure, the flange structure and the pressure ring cooperate to form the diffusion channel.

[0016] Preferably, the air supply device comprises an air intake pipeline, wherein:

[0017] The gas outlet end of the gas inlet pipeline is connected to the gas inlet end of each of the gas inlet channels; the gas inlet end of the gas inlet pipeline extends to the outside of the reaction chamber and is connected to the gas source of the process gas.

[0018] Preferably, the air inlet pipeline passes through a side wall of the reaction chamber below the base and extends to the outside of the reaction chamber.

[0019] Preferably, the air supply device comprises an air intake pipeline, wherein:

[0020] The outlet end of the air inlet pipeline is connected to the air inlet end of each of the air inlet channels; the air inlet end of the air inlet pipeline extends to the outside of the reaction chamber and is connected to the gas source of the process gas; and the air inlet pipeline is a soft pipeline so as to remain connected to the air inlet channel when the air inlet structure is raised or lowered.

[0021] Preferably, the semiconductor process component also includes a uniform flow structure, which is fixedly connected to the air intake structure, and a uniform flow space is arranged in the uniform flow structure along the circumference of the pressure ring, and the uniform flow space is connected to each of the air intake channels; the gas supply device transports the process gas to each of the air intake channels through the uniform flow space of the uniform flow structure.

[0022] Preferably, the air intake structure comprises: a first body and a second body, the second body is sleeved on the periphery of the first body, the first body and the second body are both connected to the uniform flow structure, and the annular space between the first body and the second body forms the air intake channel.

[0023] Preferably, each of the air intake passages is a straight through hole that penetrates the air intake structure along the axial direction of the pressure ring.

[0024] A semiconductor processing device comprises a reaction chamber, wherein a semiconductor process component and a pedestal for carrying a substrate are arranged in the reaction chamber, and the semiconductor process component adopts the semiconductor process component described in the present application.

[0025] The present invention has the following beneficial effects:

[0026] The semiconductor process assembly and semiconductor processing equipment provided by the present invention include a pressure ring, an air intake structure and an air supply device, wherein the pressure ring is used to press the edge area of ​​the upper surface of the wafer when the base is located at the process position; the air intake structure is arranged below the pressure ring along the circumference of the pressure ring, and when the base is located at the process position, there is a diffusion channel between the air intake structure and the pressure ring that is connected to the upper space of the base; and, a plurality of air intake channels are arranged in the air intake structure, and the outlet ends of the plurality of air intake channels are all connected to the diffusion channel and are evenly distributed along the circumference of the pressure ring; the air supply device is used to transport process gas to each air intake channel, and after the process gas flows out of the air intake channel, it enters the upper space of the base through the diffusion channel. The present invention can make the process gas enter the upper space of the base evenly and quickly through the air intake structure and the diffusion channel by arranging the air intake structure, thereby ensuring the uniformity of the plasma energy when the process is carried out on the surface of the wafer. At the same time, since the process gas is generally at room temperature, the pressure ring can be indirectly cooled to keep the temperature of the pressure ring relatively stable, thereby reducing its heat radiation to the wafer and keeping the process temperature of the wafer relatively stable. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 A schematic diagram of a conventional PVD chamber structure;

[0028] Figure 2 A schematic diagram of a first structure of a semiconductor process component provided by an embodiment of the present invention;

[0029] Figure 3 A schematic diagram of the structure of the air intake structure in an embodiment of the present invention;

[0030] Figure 4 A second structural schematic diagram of a semiconductor process component provided by an embodiment of the present invention;

[0031] Figure 5 A third structural schematic diagram of a semiconductor process component provided by an embodiment of the present invention;

[0032] Figure 6 A fourth structural schematic diagram of a semiconductor process assembly provided by an embodiment of the present invention;

[0033] Figure 7 A schematic diagram of the structure of a semiconductor processing device provided by an embodiment of the present invention;

[0034] Figure 8 Another structural schematic diagram of the air intake structure provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0035] In order to enable those skilled in the art to better understand the technical solution of the present invention, the semiconductor process component and semiconductor processing equipment provided by the present invention are described in detail below with reference to the accompanying drawings.

[0036] like Figure 2 FIG. 1 is a schematic diagram of a structure of a semiconductor process assembly provided by an embodiment of the present invention, comprising a pressure ring 1, the pressure ring 1 is used to press the edge area of ​​the upper surface of the wafer 3 when the base 2 is located at the process position; the semiconductor process assembly further comprises an air intake structure 4 and an air supply device (not shown in the figure), the air intake structure 4 is arranged below the pressure ring 1 along the circumference of the pressure ring, and when the base 2 is located at the process position, there is a diffusion channel between the air intake structure 4 and the pressure ring 1 that is connected to the upper space of the base 2; and as shown in FIG. Figure 3 As shown, a plurality of air inlet channels 41 are provided in the air inlet structure 4, and the outlet ends of the plurality of air inlet channels 41 are all connected to the diffusion channel and are evenly distributed along the circumference of the pressure ring 1; the air supply device is used to transport the process gas to each air inlet channel 41, and after the process gas flows out of the air inlet channel 41, it enters the upper space of the base 2 through the diffusion channel.

[0037] The semiconductor process assembly provided by the embodiment of the present invention can allow the process gas to enter the space above the base 2 evenly and quickly through the gas inlet structure 4 and the diffusion channel, ensuring the uniformity of the plasma energy when the process is performed on the surface of the wafer. At the same time, since the process gas is generally at room temperature, the pressure ring 1 can be indirectly cooled to keep the temperature of the pressure ring 1 relatively stable, thereby reducing its heat radiation to the wafer 3 and keeping the wafer process temperature relatively stable.

[0038] See also Figure 2 The diffusion channel is the area indicated by the arrow, and the outlet end of the air inlet channel 41 is connected to the diffusion channel indicated by the arrow.

[0039] Optionally, the air inlet passage 41 may be a straight through hole that penetrates the air inlet structure 4 along the axial direction of the pressure ring 1. The radial cross-sectional shape of the straight through hole may be a circular, triangular, square or other shapes. Figure 3 The radial cross-section of the through hole is circular. The diameter of the circular through hole can be set differently according to different processes. Generally speaking, the diameter of each through hole can be set to about 2 mm.

[0040] In one embodiment of the present invention, Figure 4 As shown, the semiconductor process assembly also includes an inner liner 5, which has a flange structure 51 that bends inward from its lower end and extends upward. The flange structure 51 is used to support the pressure ring 1 when the base is lowered. The air intake structure 4 is formed in the flange structure 51. When the base 2 is located at the process position, a diffusion channel is formed between the flange structure 51 and the pressure ring 1; and an air intake channel 41 is provided in the flange structure 51. In this embodiment, the flange structure 51 of the inner liner serves as the basis for forming the air intake structure 4, and each air intake channel 41 is directly provided inside the flange structure 51. The structure is simple and easy to implement, and the purpose of improving the uniformity of plasma energy is achieved.

[0041] In another embodiment of the present invention, the air intake structure 4 can also be arranged on the side wall of the flange structure 51 and fixedly connected to the side wall of the flange structure 51. In this embodiment, the air intake structure 4 is arranged as an independent component, and its structure is similar to Figure 3 In the structure shown, the air inlet structure 4 is arranged on the side wall of the flange structure 51, so that further processing of the flange structure 51 can be avoided. The structure is simple, easy to implement, and more convenient to maintain. It can also achieve the purpose of improving the uniformity of plasma energy.

[0042] In another embodiment of the present invention, Figure 5 As shown, the air intake structure 4 can also be fixedly connected to the lower surface of the pressure ring 1; or, as shown in Figure 6 As shown, the air intake structure 4 can also be fixedly connected to the side wall of the base 2. In this embodiment, the air intake structure 4 is also set as an independent component, and the air intake structure 4, the flange structure 51 and the pressure ring 1 cooperate to form a diffusion channel. This embodiment provides a variety of fixed forms of the air intake structure 4. In the specific implementation process, different setting schemes can be flexibly selected to set the air intake structure 4 according to factors such as the positional relationship of different components, the shape change of specific components (such as the pressure ring), etc.

[0043] Based on the above-mentioned configuration of the air intake structure 4, in one embodiment of the present invention, as Figure 7 As shown, the gas supply device may include an air inlet pipeline 7, wherein the outlet end of the air inlet pipeline 7 is connected to the air inlet end of each air inlet channel 41; the air inlet end of the air inlet pipeline 7 extends to the outside of the reaction chamber 6 and is connected to the gas source of the process gas.

[0044] The gas source is used to provide process gas to the air inlet pipeline. Figure 4 The flange structure 51 of the middle liner 5 serves as a diffusion channel between the air intake structure 4 and the pressure ring 1 .

[0045] Preferably, if Figure 7 As shown, the air inlet pipeline 7 passes through the side wall of the reaction chamber 6 below the base 2 and extends to the outside of the reaction chamber 6 .

[0046] For the case where the air intake structure 4 is fixedly connected to the lower surface of the pressure ring 1 or the air intake structure 4 is fixedly connected to the side wall of the base 2, the air intake pipe 7 needs to be set as a soft pipe and have some margin in length to maintain connection with the air intake channel 41 when the air intake structure 4 is raised or lowered.

[0047] In another embodiment of the present invention, Figure 7As shown, the semiconductor process component may further include a uniform flow structure 8, which is fixedly connected to the air intake structure 4, and a uniform flow space is arranged in the uniform flow structure 8 along the circumference of the pressure ring 1, and the uniform flow space is connected to each air intake channel; the gas supply device transports the process gas to each air intake channel 41 through the uniform flow space of the uniform flow structure 8.

[0048] Based on the uniform flow structure 8, Figure 8 As shown, the air intake structure 4 can also be configured to include: a first body 42 and a second body 43, the second body 43 is sleeved on the periphery of the first body 42, the first body 42 and the second body 43 are both connected to the uniform flow structure 8, and the annular space between the first body 42 and the second body 43 forms an air intake channel 41. The air intake structure provided in the embodiment of the present invention is a hollow air intake structure, and the air intake channel 41 is a hollow cavity that penetrates the air intake structure along the axial direction of the pressure ring 1. Based on different processes, the width of the hollow cavity can be set differently. Generally speaking, the width of the hollow cavity can be set to about 2 mm.

[0049] In view of the semiconductor process components provided in the above embodiments, the present invention also provides a semiconductor processing device, such as Figure 7 As shown, the semiconductor processing equipment includes: a reaction chamber 6, in which a semiconductor process component and a base 2 for carrying a substrate are arranged. The semiconductor process component can adopt the semiconductor process component provided by any one of the above embodiments of the present invention.

[0050] Figure 7 When the provided semiconductor processing equipment is used for a process, the wafer 3 and the pressure ring 1 are raised to the corresponding process position along with the base 2, so that the wafer 3 and the pressure ring 1 are separated from the inner liner flange structure 51 and are in a suspended potential. The pressure ring 1 protects the wafer 3 in a safe position and does not cause a large position deviation, while protecting the interior of the reaction chamber 6 from being contaminated by sputtering. After the process gas flows into the uniform flow structure 8 through the air inlet pipeline 7, it evenly enters between the target material 9 and the wafer 3 through the air inlet channel 41 of the inner liner flange structure 51, forming a uniform plasma for thin film deposition.

[0051] On the one hand, the process gas flows upward through the air inlet channel into the diffusion channel between the liner and the pressure ring, and then enters between the target material and the wafer to be excited into plasma. This uniform air intake method ensures the uniformity of plasma energy. On the other hand, since the chamber wall, liner and base of the reaction chamber have all been designed to pass water, the temperature is guaranteed to be constant during the process. Due to the thin thickness and frequent movement of the pressure ring, it is difficult to control the temperature through water cooling. However, through the air intake method of the air inlet channel, the room temperature gas contacts the pressure ring for heat exchange, cools the pressure ring, makes the temperature of the pressure ring relatively stable, and achieves the purpose of temperature control, thereby reducing its thermal radiation to the wafer and avoiding the occurrence of abnormal stress and defects in the film.

[0052] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those of ordinary skill in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A semiconductor process assembly, comprising a pressure ring, the pressure ring being used to press the edge area of ​​the upper surface of a wafer when a susceptor is in a process position, characterized in that: Also includes: An air intake structure is arranged below the pressure ring along the circumference of the pressure ring, and when the base is located at the process position, a diffusion channel connected to the upper space of the base exists between the air intake structure and the pressure ring; and a plurality of air intake channels are arranged in the air intake structure, and the outlet ends of the plurality of air intake channels are all connected to the diffusion channel and are evenly distributed along the circumference of the pressure ring; wherein the outlet ends of the plurality of air intake channels extend into the diffusion channel; A gas supply device, used for delivering process gas to each of the gas inlet channels, wherein the process gas flows out of the gas inlet channels and then enters the space above the base through the diffusion channel; The gas supply device comprises an air inlet pipeline, wherein the air outlet end of the air inlet pipeline is connected to the air inlet end of each of the air inlet channels; the air inlet end of the air inlet pipeline penetrates the side wall of the reaction chamber below the base, extends to the outside of the reaction chamber, and is connected to the gas source of the process gas; The semiconductor process assembly further comprises a uniform flow structure, the uniform flow structure is fixedly connected to the air intake structure, and a uniform flow space is arranged in the uniform flow structure along the circumference of the pressure ring, the uniform flow space is connected to each of the air intake channels; the gas supply device transports the process gas to each of the air intake channels through the uniform flow space of the uniform flow structure; The semiconductor process component also includes a liner having a flange structure that bends inward from its lower end and extends upward, and the flange structure is used to support the pressure ring when the base descends; the air intake structure is a structure independent of the liner.

2. The semiconductor process assembly according to claim 1, wherein: The air intake structure is arranged on the side wall of the flange structure and is fixedly connected to the side wall of the flange structure.

3. The semiconductor process assembly according to claim 1, wherein: The air intake structure is fixedly connected to the lower surface of the pressure ring; or, the air intake structure is fixedly connected to the side wall of the base; The air intake structure, the flange structure and the pressure ring cooperate to form the diffusion channel.

4. The semiconductor process assembly according to claim 1, wherein: The air inlet pipeline passes through a side wall of the reaction chamber below the base and extends to the outside of the reaction chamber.

5. The semiconductor process assembly according to claim 3, wherein: The air supply device comprises an air intake pipeline, wherein: The outlet end of the air inlet pipeline is connected to the air inlet end of each of the air inlet channels; the air inlet end of the air inlet pipeline extends to the outside of the reaction chamber and is connected to the gas source of the process gas; and the air inlet pipeline is a soft pipeline so as to remain connected to the air inlet channel when the air inlet structure is raised or lowered.

6. The semiconductor process assembly according to claim 1, wherein: The air intake structure comprises: a first body and a second body, the second body is sleeved on the periphery of the first body, the first body and the second body are both connected to the uniform flow structure, and the annular space between the first body and the second body forms the air intake channel.

7. The semiconductor process assembly according to any one of claims 1 to 3, characterized in that: Each of the air intake channels is a straight through hole that penetrates the air intake structure along the axial direction of the pressure ring.

8. A semiconductor processing device, comprising a reaction chamber, wherein a semiconductor process component and a base for carrying a substrate are arranged in the reaction chamber, characterized in that: The semiconductor process component adopts the semiconductor process component described in any one of claims 1-7.

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