Detector, detection device and method of using the same

Abstract

Embodiments of the present invention relate to a detector, a detection device and a method of using the same. Some embodiments of the present invention disclose a detector, comprising: a substrate comprising a first surface and a second surface opposite to the first surface; a funnel-shaped groove extending from the second surface of the substrate to the first surface of the substrate; a conductive layer disposed below the first surface of the substrate; an insulating layer disposed between the substrate and the conductive layer; and a first through-via extending through the conductive layer and the insulating layer and coupled to the funnel-shaped groove.

Description

Technical Field

[0001] The embodiments of the present invention relate to a detector, a detection device and a method of using the same. Background Art

[0002] In the manufacture of semiconductor integrated circuit (IC) devices, various device components, such as insulating layers, conductive layers, semiconductor layers, etc., are formed on a semiconductor substrate. It is well known that the process in which such components are formed is a factor in the quality of the manufactured IC devices. In addition, the quality of the manufactured devices and the cleanliness of the manufacturing environment in which the IC devices are processed are factors in the yield of the IC manufacturing process.

[0003] In recent years, the growing trend towards miniaturization of semiconductor IC devices has necessitated tighter control of the cleanliness of the chemical liquids in the manufacturing process and in the processing chambers in which the process is performed. This includes tighter control of the maximum amount of impurities and contaminants allowed in the chemical liquids used in the process. As the size of miniaturized devices approaches the sub-half-micron level, even the smallest amount of contaminants can significantly reduce the yield of the IC manufacturing process. For example, the number of particles in the chemical liquid used in the process can create yield issues. In addition, without the current lack of online particle detection of particles smaller than 20 nanometers, it is difficult to identify whether the particles are from raw materials or from transportation prior to the production process. Summary of the invention

[0004] An embodiment of the present invention relates to a detector, comprising: a substrate comprising a first surface and a second surface opposite to the first surface; a funnel-shaped groove extending from the second surface of the substrate to the first surface of the substrate; a conductive layer placed below the first surface of the substrate; an insulating layer placed between the substrate and the conductive layer; and a first through-path extending through the conductive layer and the insulating layer and coupled to the funnel-shaped groove.

[0005] An embodiment of the present invention relates to a detection device, comprising: a first detector, comprising: a first substrate, having a first groove; a first conductive layer; a first insulating layer, placed between the first substrate and the first conductive layer, wherein a portion of the first insulating layer is exposed through the bottom of the first groove; and a first through-path, extending through the first conductive layer and the first insulating layer, and coupled to the first groove; and a second detector, comprising: a second substrate, having a second groove; a second conductive layer; a second insulating layer, placed between the second substrate and the second conductive layer, wherein a portion of the second insulating layer is exposed through the bottom of the second groove; and a plurality of second through-paths, extending through the second conductive layer and the second insulating layer, and coupled to the second groove, wherein the first through-path has a first width, each of the second through-paths has a second width, and the second width is smaller than the first width.

[0006] An embodiment of the present invention relates to a method for detecting purity and particles in a liquid, comprising: providing a detection device; providing a chemical liquid flowing through the detection device; measuring the capacitance of the detection device during the flow of the chemical liquid; and calculating the dielectric constant of the chemical liquid based on the capacitance of the detection device; and when the dielectric constant of the chemical liquid is between a predetermined upper limit and a predetermined lower limit, determining the chemical liquid to be normal. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or reduced for clarity of discussion.

[0008] Figure 1A is a cross-sectional view illustrating a detector according to aspects of the present disclosure, Figure 1B yes Figure 1A A top view of the detector in FIG. 1 , and Figure 1C yes Figure 1A Bottom view of the detector in .

[0009] Figure 2A is a cross-sectional view illustrating a detector according to aspects of the present disclosure, and Figure 2B yes Figure 2A Bottom view of the detector.

[0010] Figure 3 is a bottom view illustrating a detector according to aspects of the present disclosure.

[0011] Figure 4 is a bottom view illustrating a detector according to aspects of the present disclosure.

[0012] Figure 5 is a bottom view illustrating a detector according to aspects of the present disclosure.

[0013] Fig. 6A is a cross-sectional view of a detector illustrating a stage of a method for forming a detection device according to aspects of the present disclosure, and Figure 6B yes Fig. 6A Bottom view of the detector in .

[0014] Fig. 7A is a cross-sectional view of a detector illustrating a stage of a method for forming a detection device according to aspects of the present disclosure, and Figure 7B yes Fig. 7A Top view of the detector in .

[0015] Fig. 8A is a cross-sectional view of a detection device illustrating stages of a method for forming a detector according to aspects of the present disclosure, and Figure 8B yes Fig. 8A A bottom view or a top view of the detector in FIG.

[0016] Fig. 9 is a cross-sectional view of a detection device according to aspects of the present disclosure.

[0017] Fig.10 is a cross-sectional view of a detection device according to aspects of the present disclosure.

[0018] Fig.11 is a cross-sectional view of a detection device according to aspects of the present disclosure.

[0019] Fig.12 is a cross-sectional view of a detection device according to aspects of the present disclosure.

[0020] Fig.13 is a cross-sectional view of a detection device according to aspects of the present disclosure.

[0021] Fig.14 is a flow chart representing a method for detecting purity changes in a chemical liquid according to aspects of the present disclosure.

[0022] Fig.15 is a schematic diagram illustrating a portion of a detection device in some embodiments of a method for detecting purity changes in a chemical liquid according to aspects of the present disclosure.

[0023] Fig.16A and 16B is a diagram illustrating a result of detecting a purity change of a chemical liquid according to aspects of the present disclosure.

[0024] Fig.17 is a flow chart representing a method for detecting particles in a chemical liquid according to aspects of the present disclosure.

[0025] Fig.18 is a schematic diagram illustrating a portion of a detection device in some embodiments of a method for detecting particles in a chemical liquid according to aspects of the present disclosure.

[0026] Fig.19A and 19B 2 is a diagram illustrating a detection result of a change in contaminant particles contained in a chemical liquid according to an aspect of the present disclosure. DETAILED DESCRIPTION

[0027] The following disclosure provides many different embodiments or examples for implementing the different features of the provided subject matter. The following describes the specific examples of elements and arrangements to simplify this disclosure. Of course, these are only examples and do not wish to be restrictive. For example, the first component in the following description is formed on or above the second component and may include an embodiment in which the first component and the second component are formed to directly contact, and may also include an embodiment in which an additional component may be formed between the first component and the second component so that the first component and the second component may not directly contact. In addition, this disclosure may repeat element symbols and / or letters in various examples. This repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0028] This description of illustrative embodiments is intended to be read in conjunction with the accompanying drawings that should be considered as a part of the complete written description. In the description of the embodiments disclosed herein, any reference to direction or orientation is intended only for the convenience of description and is not intended to limit the scope of the present disclosure in any way. Relative terms such as "lower", "upper", "horizontal", "vertical", "above", "below", "upward", "downward", "top" and "bottom" and their derivatives (such as "horizontally", "downwardly", "upwardly", etc.) should be interpreted as referring to the orientation shown in the drawings as described next or as discussed. Such relative terms are only for the convenience of description and do not require the device to be constructed or operated in a specific orientation. Terms such as "attachment", "attachment", "connection" and "interconnection" refer to the relationship in which the structures are directly or indirectly fixed or attached to each other through an intermediary structure, and both removable or rigid attachments or relationships, unless otherwise explicitly described. In addition, the features and benefits of the present disclosure are illustrated by reference to the embodiments. Therefore, the present disclosure should not be explicitly limited to such embodiments that illustrate a possible non-limiting combination of features that can exist alone or in other combinations of features, and the scope of the present disclosure should be defined by the attached claims.

[0029] Although the numerical ranges and parameters stating the broad scope of the present disclosure are approximate values, the numerical values ​​explained in the specific examples are reported as accurately as possible. However, any numerical value inherently contains certain errors that are not necessarily derived from the standard deviation found in the corresponding test measurement. Moreover, as used herein, the terms "substantially", "approximately" or "about" generally mean within the value or range that can be expected by a person of ordinary skill in the art. Alternatively, when considered by a person of ordinary skill in the art, the terms "substantially", "approximately" or "about" mean within the acceptable standard error of the mean value. A person of ordinary skill in the art can understand that the acceptable standard error can vary according to different technologies. Except in the operating / working examples, or unless otherwise explicitly specified, all numerical ranges, amounts, values ​​and percentages (such as for the number of materials, duration, temperature, operating conditions, ratios of amounts and numerical ranges, amounts, values ​​and percentages of the analogs thereof disclosed herein) should be understood to be modified by the terms "substantially", "approximately" or "about" in all examples. Therefore, unless otherwise indicated, the numerical parameters stated in the present disclosure and the appended claims are approximate values ​​that can be varied as needed. Each numerical parameter should at least be construed in light of the number of reported significant digits and by applying ordinary rounding techniques. Ranges may be expressed herein as from one endpoint to the other or between two endpoints. All ranges disclosed herein include the endpoints unless otherwise specified.

[0030] The term "nanoparticle" refers to an atomic, molecular or macromolecular particle typically in the length scale range of approximately 1 to 100 nanometers. Generally speaking, novel and different properties and functions of nanoparticles are observed or developed at critical length material scales, typically below 100 nm.

[0031] Particles (e.g., nanoparticles) distributed in a chemical liquid can change the properties of the chemical liquid. Sometimes, the properties of the chemical liquid can be adjusted by introducing conductive or insulating nanoparticles. However, particles or nanoparticles can be undesirable and such nanoparticle contamination can lead to degradation of electrical, yield, and device performance. Therefore, a detector for obtaining the properties of a chemical liquid or for detecting nanoparticles distributed in a chemical liquid is needed.

[0032] Therefore, nanoparticle detectors are developed. In some comparative methods, nanoparticle detectors are mainly used for conductive liquids. The term "conductive liquid" refers to a chemical liquid having a resistivity less than approximately milliohm centimeters (MΩcm). It has been found that such nanoparticle detectors do not perform accurate detection of high-resistance organic chemical liquids having a resistivity greater than milliohm centimeters. In some comparative methods, nanoparticle detectors can be used to detect high-density nanoparticles. In some examples, the term "high density" refers to an amount greater than approximately 1000 per cubic centimeter. However, it has been found that when the nanoparticle density is less than 1000 per cubic centimeter, this nanoparticle detector suffers from malfunction. In some comparative methods, the detector may be a laser light detector (UDI). However, when detecting particles having a size equal to or less than 20nm, the laser light detector suffers from low efficiency because the light absorption effect is also increased due to the increase in the particle energy band.

[0033] The present disclosure provides a detection device and a method for using the same. In some embodiments, the detection device is capable of detecting nanoparticles in a high resistance organic chemical liquid having a resistivity greater than milliohm centimeters. In some embodiments, the detection device comprises a nanocapacitor. When the chemical liquid flows through the nanocapacitor, the capacitance may be changed. Based on the change in the capacitance of the nanocapacitor, the presence of nanoparticles may be determined. In addition, the characteristics of the chemical liquid may be obtained. The detection method depends on different materials having different dielectric constants.

[0034] Figure 1A is a cross-sectional view illustrating a detector according to aspects of the present disclosure, Figure 1B yes Figure 1A A top view of the detector in FIG. 1 , and Figure 1C yes Figure 1A 1. A bottom view of a detector in FIG. 1. In some embodiments, a detector 100a is provided. The detector 100a includes a substrate 110, a conductive layer 120 below the substrate 110, and an insulating layer 130 between the conductive layer 120 and the substrate 110. The substrate 110 includes a first surface 112a and a second surface 112b opposite to the first surface 112a. The conductive layer 120 is placed below the first surface 112a of the substrate 110, and the insulating layer 130 is placed between the conductive layer 120 and the first surface 112a of the substrate 110.

[0035] The substrate 110 may be a semiconductor substrate commonly used in semiconductor manufacturing processes, but the present disclosure is not limited thereto. In some embodiments, the semiconductor substrate may be a pure semiconductor substrate, but the present disclosure is not limited thereto. In some embodiments, the conductive layer 120 may include a metal layer. In other embodiments, the conductive layer 120 may include a doped semiconductor layer, such as a doped polysilicon layer, but the present disclosure is not limited thereto. In some embodiments, the thickness T of the conductive layer 120 may be between approximately 1 μm and approximately 10 μm. In other embodiments, the thickness T of the conductive layer 120 may be between approximately 100 nm and approximately 1 μm. Conductive layers 120 having different thickness ranges may be used in different detections, as will be described in the following description. In some embodiments, the insulating layer 130 includes a silicon nitride layer, but the present disclosure is not limited thereto. The insulating layer 130 provides sufficient chemical resistance, mechanical strength, and pressure resistance, so that the insulating layer 130 can be used as a support layer for the conductive layer 120. In some embodiments, the thickness of the insulating layer 130 is between approximately 10 nm and approximately 500 nm in order to provide sufficient support, but the present disclosure is not limited thereto. In addition, the conductive layer 120 has a pattern, and the insulating layer 130 is exposed through the pattern of the conductive layer 120, such as Figure 1C In some embodiments, the pattern of the conductive layer 120 includes a first portion 122a and a second portion 122b. In some embodiments, the first portion 122a and the second portion 122b may be aligned with each other. In other embodiments, the first portion 122a and the second portion 122b may be symmetrically arranged, but the present disclosure is not limited thereto. Figure 1C As shown in FIG. 1 , the first portion 122a and the second portion 122b are separated from each other.

[0036] like Figure 1A and Figure 1B As shown in FIG. 1 , the detector 100a has a funnel-shaped groove 140 extending from the second surface 112b of the substrate 110 to the first surface 112a of the substrate 110, so that the insulating layer 130 can be exposed through the bottom of the funnel-shaped groove 140. Figure 1B , the funnel-shaped groove 140 may have a rectangular configuration as viewed from above, but the present disclosure is not limited thereto. In other embodiments, the funnel-shaped groove 140 may have a circular configuration or other suitable configuration as viewed from above. The funnel-shaped groove 140 has an upper opening 142a at the second surface 112b and a lower opening 142b at the first surface 112a. In addition, the width, length or diameter of the upper opening 142a is greater than the width, length or diameter of the lower opening 142b, as shown in FIG. Figure 1A As shown in Figure 1A to Figure 1C, the detector 100a further has a through-via 150 extending through the conductive layer 120 and the insulating layer 130. The through-via 150 is coupled to the funnel-shaped groove 140. The through-via 150 may have a rectangular configuration as viewed from above or as viewed from below, but the present disclosure is not limited thereto. In addition, the through-via 150 separates the first portion 122a from the second portion 122b of the conductive layer 120, as shown in FIG. Figure 1C . The through-via 150 may have a width W and a length L. In some embodiments, both the width W and the length L are less than the width, length, or diameter of the lower opening 142b. In some embodiments, the length L of the through-via 150 is greater than the width of the pattern of the conductive layer 120, so that the first portion 122a and the second portion 122b are completely separated from each other by the through-via 150. In some embodiments, the width W of the through-via 150 is less than or equal to approximately 100 nm, but the present disclosure is not limited thereto. In some embodiments, the length L of the through-via 150 is between approximately 100 μm and approximately 1000 μm. In other embodiments, the length L of the through-via 150 is between approximately 1 μm and approximately 10 μm. It should be noted that the larger through-via 150 is paired with the thicker conductive layer 120. For example, when the length L of the through-via 150 is between approximately 100 μm and approximately 1000 μm, the thickness T of the conductive layer 120 is between approximately 1 μm and approximately 10 μm. When the length L of the through via 150 is between approximately 1 μm and approximately 10 μm, the thickness of the conductive layer 120 may be between approximately 100 nm and approximately 1 μm. Through vias 150 having different lengths L may be used in different tests, as will be described in the following description.

[0037] Figure 2A is a cross-sectional view illustrating a detector according to aspects of the present disclosure, and Figure 2B yes Figure 2A Bottom view of the detector in FIG. It should be noted that Figure 1A to Figure 1C and Figure 2A to Figure 2B Like elements in the drawings are indicated by like numerals and are referred to in the following for simplicity. Figure 2A and Figure 2B Omitted from the description Figure 1A to Figure 1C and Figure 2A to Figure 2B. In some embodiments, a detector 100b is provided. The detector 100b includes a substrate 110, a conductive layer 120, and an insulating layer 130 between the substrate 110 and the conductive layer 120. The substrate 110 has a first surface 112a and a second surface 112b opposite to the first surface 112a, and the insulating layer 130 is in contact with the first surface 112a. As mentioned above, the conductive layer 120 has a pattern, and the insulating layer 130 is exposed by the pattern of the conductive layer 120. The detector 100b further includes a funnel-shaped groove 140 extending from the second surface 112b to the first surface 112a. As mentioned above, the funnel-shaped groove 140 has an upper opening 142a at the second surface 112b and a lower opening 142b at the first surface 112a, and the width of the upper opening 142a is greater than the width of the lower opening 142b.

[0038] The detector 100b further includes a plurality of through vias 150-1 and 150-2 to 150n extending through the conductive layer 120 and the insulating layer 130. For example, there may be two through vias 150-1 and 150-2, such as Figure 2A and Figure 2B . Both the through vias 150-1 and 150-2 are coupled to the funnel-shaped groove 140, but are separated from each other. It should be noted that the above-mentioned pattern of the conductive layer 120 is formed corresponding to the through vias. For example, when there are two through vias 150-1 and 150-2, the pattern of the conductive layer 120 may have a first portion 122a-1 and a second portion 122b-1 formed corresponding to the through via 150-1, and the pattern of the conductive layer 120 may further have a first portion 122a-2 and a second portion 122b-2 formed corresponding to the through via 150-2. In addition, the first portion 122a-1 and the second portion 122b-1 are separated from each other by the through via 150-1, and the first portion 122a-2 and the second portion 122b-2 are separated from each other by the through via 150-2, as shown in FIG. Figure 2B Displayed in.

[0039] Still refer to Figure 2A and Figure 2B, the funnel-shaped groove 140 may have a rectangular configuration as viewed from above, but the disclosure is not limited thereto. In other embodiments, the funnel-shaped groove 140 may have a circular configuration as viewed from above or other suitable configurations. The through-vias 150-1 and 150-2 may have a rectangular configuration as viewed from above or as viewed from below, respectively, but the disclosure is not limited thereto. Each of the through-vias 150-1 and 150-2 may have a width W and a length L. In some embodiments, both the width W and the length L are less than the width, length, or diameter of the lower opening 142b of the funnel-shaped groove 140. In some embodiments, the length L of the through-vias 150-1 and 150-2 is greater than the width of the pattern of the conductive layer 120, so that the first portion 122a-1 and the second portion 122b-1 are completely separated from each other by the through-via 150-1, and the first portion 122a-2 and the second portion 122b-2 are completely separated from each other by the through-via 150-2. In some embodiments, the width W of the through via 150 is less than or equal to approximately 100 nm, but the disclosure is not limited thereto. In other embodiments, the length L of the through via 150 is between approximately 1 μm and approximately 10 μm. It should be noted that smaller through vias 150 are paired with thinner conductive layers 120, and larger through vias are paired with thicker conductive layers 120. For example, when the length L of each through via 150-1 and 150-2 is between approximately 1 μm and approximately 10 μm, the thickness T of the conductive layer 120 may be between approximately 100 nm and approximately 1 μm. Different thickness ranges may be used in different tests, as will be described in the following description.

[0040] Figure 3 is a bottom view illustrating a detection device according to aspects of the present disclosure. It should be noted that Figure 2A , Figure 2B and Figure 3 Like elements in the drawings are indicated by like numerals and are referred to in the following for simplicity. Figure 3 Omitted from the description Figure 2A , Figure 2B and Figure 3 Details of the same components shown in Figure 3 , a detector 100c is provided. The detector 100c may include elements similar to those described above, and therefore only the differences are detailed. In some embodiments, the first portion and the second portion of the pattern are not aligned with each other. Figure 3, in some embodiments, the first portion 122a-1 and the second portion 122b-1 are perpendicular to each other and separated from each other by a through passage 150-1. The first portion 122a-2 and the second portion 122b-2 are perpendicular to each other and separated from each other by a through passage 150-2. It should be noted that in some embodiments, the first portions 122a-1 and 122a-2 may be parallel to each other, and the second portions 122b-1 and 122b-2 may be parallel to each other, but the present disclosure is not limited thereto. It should be understood that the first portions 122a-1, 122a-2 and the second portions 122b-1, 122b-2 of the pattern may be arranged depending on different product designs, and such details are omitted for the sake of brevity. In some embodiments, the lengths of the through passage 150-1 and the through passage 150-2 are parallel to each other, such as Figure 3 Displayed in.

[0041] Figure 4 is a bottom view illustrating a detection device according to aspects of the present disclosure. It should be noted that Figure 2A , Figure 2B and Figure 4 Like elements in the drawings are indicated by like numerals and are referred to in the following for simplicity. Figure 4 Omitted from the description Figure 2A , Figure 2B and Figure 4 Details of the same components shown in Figure 4 , a detector 100d is provided. The detector 100d may include elements similar to those described above, and therefore only the differences are detailed. As mentioned above, the detector 100d may include a plurality of through vias 150-1 and 150-2 to 150-n extending through the conductive layer 120 and the insulating layer 130. For example, in some embodiments, there are four through vias 150-1, 150-2, 150-3, and 150-4. The through vias 150-1, 150-2, 150-3, and 150-4 are all coupled to the funnel-shaped groove 140, but are separated from each other, such as Figure 4 In addition, the through vias 150-1, 150-2, 150-3, and 150-4 may be aligned with each other to form a straight line, but the present disclosure is not limited thereto.

[0042] Still refer to Figure 4As mentioned above, the pattern of the conductive layer 120 is formed corresponding to the through vias 150-1, 150-2, 150-3, and 150-4. For example, when there are four through vias 150-1, 150-2, 150-3, and 150-4, the pattern of the conductive layer 120 may have a first portion 122a-1 and a second portion 122b-1 formed corresponding to the through via 150-1, a first portion 122a-2 and a second portion 122b-2 formed corresponding to the through via 150-2, a first portion 122a-3 and a second portion 122b-3 formed corresponding to the through via 150-3, and a first portion 122a-4 and a second portion 122b-4 formed corresponding to the through via 150-4. In addition, the first portion 122a-1 and the second portion 122b-1 are separated from each other by the through passage 150-1, the first portion 122a-2 and the second portion 122b-2 are separated from each other by the through passage 150-2, the first portion 122a-3 and the second portion 122b-3 are separated from each other by the through passage 150-3, and the first portion 122a-4 and the second portion 122b-4 are separated from each other by the through passage 150-4, as shown in FIG. Figure 4 . In some embodiments, all of the first portion 122a-1 to 122a-4 and the second portion 122b-1 to 122b-4 are separated from each other. In some embodiments, the first portion 122a-1 is aligned with the second portion 122b-1, the first portion 122a-2 is aligned with the second portion 122b-2, the first portion 122a-3 is aligned with the second portion 122b-3, and the first portion 122a-4 is aligned with the second portion 122b-4, and the present disclosure is not limited thereto. In some embodiments, the first portion (i.e., 122a-1 to 122a-4) and the second portion (i.e., 122b-1 to 122b-4) are arranged symmetrically, but the present disclosure is not limited thereto. It should be understood that the first portion (i.e., 122a-1 to 122a-4) and the second portion (i.e., 122b-1 to 122b-4) of the pattern may be arranged depending on different product designs, and the details are omitted for the sake of brevity.

[0043] Figure 5 is a bottom view illustrating a detection device according to aspects of the present disclosure. It should be noted that Figure 2A , Figure 2B and Figure 5 Like elements in the drawings are indicated by like numerals and are referred to in the following for simplicity. Figure 5 Omitted from the description Figure 2A , Figure 2B and Figure 5 Details of the same components shown in Figure 5, a detector 100e is provided. The detector 100e may include elements similar to those described above, and therefore only the differences are detailed. As mentioned above, the detector 100e may include a plurality of through vias 150-1 and 150-2 to 150-n extending through the conductive layer 120 and the insulating layer 130. For example, in some embodiments, there are five through vias 150-1, 150-2, 150-3, 150-4, and 150-5. The through vias 150-1, 150-2, 150-3, 150-4, and 150-5 are all coupled to the funnel-shaped groove 140, but are separated from each other, such as Figure 5 In some embodiments, the through passages 150-1, 150-2, 150-3, 150-4, and 150-5 may be aligned with each other to form a straight line, but the present disclosure is not limited thereto. In other embodiments, the through passages 150-1, 150-2, 150-3, 150-4, and 150-5 may be arranged depending on different product designs. For example, the through passages 150-1, 150-2, 150-3, 150-4, and 150-5 may be arranged to form a plum blossom shape, such as Figure 5 However, the present disclosure is not limited thereto.

[0044] Still refer to Figure 5 As mentioned above, the pattern of the conductive layer 120 is formed corresponding to the through vias 150-1, 150-2, 150-3, 150-4, and 150-5. For example, when there are five through vias 150-1, 150-2, 150-3, 150-4, and 150-5, the pattern of the conductive layer 120 may have a first portion 122a-1 and a second portion 122b-1 formed corresponding to the through via 150-1, a first portion 122a-2 and a second portion 122b-2 formed corresponding to the through via 150-2, a first portion 122a-3 and a second portion 122b-3 formed corresponding to the through via 150-3, a first portion 122a-4 and a second portion 122b-4 formed corresponding to the through via 150-4, and a first portion 122a-5 and a second portion 122b-5 formed corresponding to the through via 150-5. In addition, the first portion 122a-1 and the second portion 122b-1 are separated from each other by the through passage 150-1, the first portion 122a-2 and the second portion 122b-2 are separated from each other by the through passage 150-2, the first portion 122a-3 and the second portion 122b-3 are separated from each other by the through passage 150-3, the first portion 122a-4 and the second portion 122b-4 are separated from each other by the through passage 150-4, and the first portion 122a-5 and the second portion 122b-5 are separated from each other by the through passage 150-5, as shown in FIG. Figure 5In some embodiments, the first portion 122a-1 to 122a-5 and the second portion 122b-1 to 122b-5 are separated from each other. In addition, the arrangement of the first portion 122a-1 to 122a-5 and the second portion 122b-1 to 122b-5 can be modified depending on different product designs.

[0045] Fig. 6A is a cross-sectional view of a detector illustrating stages of a method for forming a detector according to aspects of the present disclosure, and Figure 6B yes Fig. 6A Detectors 100a, 100b, 100c, 100d, or 100e may be formed by suitable operations, and thus, the following details are provided as examples, but the present disclosure is not limited thereto. Fig. 6A and Figure 6B The same elements in the drawings may include similar materials and be indicated by the same numbers, and therefore, such details are omitted. In some embodiments, a substrate 110 may be provided. Fig. 6A , the substrate 110 may include a first surface 112a and a second surface 112b opposite to the first surface 112a. An insulating layer 130 is formed on the first surface 112a of the substrate 110. A conductive layer 120 may be formed on the insulating layer 130. Therefore, the insulating layer 130 is placed between the substrate 110 and the conductive layer 120. The thickness T of the conductive layer 120 is determined according to the length L of the through-path to be formed. The relationship between the thickness T of the conductive layer 120 and the length L of the through-path to be formed has been described above; therefore, such details are omitted for the sake of brevity. The conductive layer 120 is patterned to form a first portion 122a and a second portion 122b coupled to each other, such as Figure 6B . The first portion 122a and the second portion 122b form a pattern, and the insulating layer 130 is exposed through the pattern. In some embodiments, the pattern is formed according to the number of through vias to be formed subsequently. For example, when there is one through via to be formed, the pattern is formed to have one first portion 122a and one second portion 122b. In other embodiments, when there are multiple through vias to be formed, the number of first portions 122a-1 and 122a-2 to 122a-n and the number of second portions 122b-1 and 122b-2 to 122b-n are respectively equal to the number of through vias to be formed. In some embodiments, after the pattern is formed, the substrate 110, the insulating layer 130, and the conductive layer 120 are flipped. Therefore, in some embodiments, the second surface 112b is referred to as a top surface or an exposure surface, but the present disclosure is not limited thereto.

[0046] Fig. 7A is a cross-sectional view of a detector illustrating stages of a method for forming a detector according to aspects of the present disclosure, and Figure 7B yes Fig. 7A 1. In some embodiments, a funnel-shaped groove 140 is formed in the substrate 110. In some embodiments, the funnel-shaped groove 140 is formed by a suitable wet etching operation, but the present disclosure is not limited thereto. As described above, the funnel-shaped groove 140 extends through the second surface 112b to the first surface 112a. Fig. 7A and Figure 7B As shown in FIG. 1 , the funnel-shaped groove 140 has an upper opening 142a at the second surface 112b and a lower opening 142b at the first surface 112a. The width of the upper opening 142a is greater than the width of the lower opening 142b. In addition, the insulating layer 130 is exposed through the lower opening 142b of the funnel-shaped groove 140.

[0047] Fig. 8A is a cross-sectional view of a detector illustrating stages of a method for forming a detector according to aspects of the present disclosure, and Figure 8B yes Fig. 8A In some embodiments, a through via 150 is formed in the insulating layer 130 and the conductive layer 120. Fig. 8A , the through via 150 extends through the conductive layer 120 and the insulating layer 130. The through via 150 is formed by a suitable dry etching operation, but the present disclosure is not limited thereto. In addition, the number of through vias 150 may be determined depending on different product requirements. Therefore, in other embodiments, a plurality of through vias 150-1 and 150-2 to 150-n may be formed in the insulating layer 130 and the conductive layer 120. The through via 150 is coupled to the funnel-shaped groove 140. In addition, the first portion 122a and the second portion 122b of the conductive layer 120 are separated from each other by the through via 150. In some embodiments, the through via 150 has a width W and a length L. The length L of the through via 150 is large enough to separate the first portion 122a from the second portion 122b, such as Figure 8B . The width W of the through passage 150 is less than the width of the lower opening 142b of the funnel-shaped groove 140. It should be noted that the length L of the through passage 150 can be modified according to different detection purposes. For example, when the detector wishes to detect whether the chemical liquid is contaminated, the length L of the through passage 150 is between approximately 100 μm and approximately 1000 μm, but the present disclosure is not limited thereto. In other embodiments, when the detector wishes to detect particles in the chemical liquid, the length L of the through passage 150 is between approximately 1 μm and approximately 10 μm, but the present disclosure is not limited thereto.

[0048] It should be noted that the number of through vias 150 may be modified depending on different product designs, the length L of each of the through vias 150 may be modified according to different detection purposes, and the thickness T of the conductive layer 120 may be modified corresponding to the length L of the through vias 150 .

[0049] Fig. 9 is a cross-sectional view of a detection device according to aspects of the present disclosure. It should be noted that the aforementioned figures and Fig. 9 Like elements in the drawings are indicated by like numerals and are referred to in the following for simplicity. Fig. 9 The aforementioned figures and Fig. 9 In some embodiments, a detection device 200a is provided. The detection device 200a may include any combination of the aforementioned detectors 100a, 100b, 100c, 100d, and 100e, but is not limited thereto. In some embodiments, the detection device 200a includes a first detector 202a and a second detector 202b. In some embodiments, the first detector 202a and the second detector 202b are electrically connected in parallel, but the disclosure is not limited thereto. In some embodiments, the first detector 202a and the second detector 202b are physically separated from each other, such as Fig. 9 However, the present disclosure is not limited thereto.

[0050] The first detector 202a may include a substrate 210a, a conductive layer 220a, and an insulating layer 230a between the substrate 210a and the conductive layer 220a, a groove 240a extending through the substrate 210a, and a through-path 250a extending through the conductive layer 220a and the insulating layer 230a. The conductive layer 220a may have a pattern including a first portion used as a first electrode and a second portion used as a second electrode. Although not shown, the first and second portions of the pattern may have a configuration similar to that described above, and therefore, repeated description of such details is omitted. As mentioned above, the first and second portions of the pattern are separated from each other by the through-path 250a. The groove 240a may be a funnel-shaped groove as mentioned above, and include an upper opening and a lower opening as mentioned above. The insulating layer 230a is exposed through the lower opening of the groove 240a. In some embodiments, the insulating layer 230a is exposed through the bottom of the groove 240a. The through via 250 a is coupled to the groove 240 a , and a width W1 of the through via 250 a is smaller than a width of the groove 240 a .

[0051] The second detector 202b may include a substrate 210b, a conductive layer 220b, and an insulating layer 230b between the substrate 210b and the conductive layer 220b, a groove 240b extending through the substrate 210b, and a plurality of through-paths 250b-1, 250b-2 extending through the conductive layer 220b and the insulating layer 230b. The conductive layer 220b may have a pattern including a first portion used as a first electrode and a second portion used as a second electrode. Although not shown, the first and second portions of the pattern may have a configuration similar to that described above, and therefore, repeated description of such details is omitted. As mentioned above, the first and second portions of the pattern are separated from each other by through-paths 250b-1, 250b-2. The groove 240b may be a funnel-shaped groove as mentioned above, and include an upper opening and a lower opening as mentioned above. The insulating layer 230b is exposed through the lower opening of the groove 240b. In some embodiments, the insulating layer 230b is exposed through the bottom of the groove 240b. The through-via 250a is coupled to the groove 240a, and the width W2 of the through-vias 250b-1 and 250b-2 is smaller than the width of the groove 240b. In addition, the width W2 of each of the through-vias 250b-1 and 250b-2 is smaller than the width W1 of the through-via 250a. Fig. 9 Displayed in.

[0052] Still refer to Fig. 9 , the sum of the widths W2 of the through passages 250b-1 and 250b-2 is equal to or greater than the width W1 of the through passage 250a. It should be noted that in some embodiments, the groove 240a is used as a liquid inlet and the through passages 250b-1 and 250b-2 are used as liquid outlets. The liquid enters the detection device 200a from the groove 240a and travels through the through passage 250a and the groove 240b, and the liquid is discharged through the through passages 250b-1 and 250b-2. If the sum of the widths W2 of the through passages 250b-1 and 250b-2 is less than the width W1 of the through passage 250a, the liquid may not be discharged sufficiently and quickly. Therefore, stagnation may be caused in the groove 240b, the through passage 250a and the groove 240a. Therefore, the detection device 200a is subjected to failure.

[0053] Reference again Fig. 9, in some embodiments, the substrates 210a and 210b may include the same material, but the disclosure is not limited thereto. In some embodiments, the insulating layer 230a and the insulating layer 230b may include the same insulating material, but the disclosure is not limited thereto. As mentioned above, the thickness of the insulating layers 230a and 230b is related to the length L of the through vias 250a and 250b-1, 250b-2. Therefore, the thickness of the insulating layer 230a through which the larger through via 250a extends is greater than the thickness of the insulating layer 230b through which the smaller through vias 250b-1 and 250b-2 extend. In some embodiments, the conductive layer 220a and the conductive layer 220b may include the same conductive material, but the disclosure is not limited thereto. In other embodiments, the conductive layer 220a and the conductive layer 220b may include different materials. For example, the conductive layer 220a may include a doped semiconductor material (e.g., doped polysilicon), while the conductive layer 220b includes a metal.

[0054] Fig.10 is a cross-sectional view of a detection device according to aspects of the present disclosure. It should be noted that Fig. 9 and Fig.10 Like elements in the drawings are indicated by like numerals and are referred to in the following for simplicity. Fig.10 Omitted from the description Fig. 9 and Fig.10 In some embodiments, a detection device 200b is provided. As mentioned above, the detection device 200b may include any combination of the aforementioned detectors 100a, 100b, 100c, 100d, and 100e, but is not limited thereto. In some embodiments, the detection device 200b includes a first detector 202a and a second detector 202b. Fig. 9 Compared with the first detector 202a and the second detector 202b of the detection device 200a shown in FIG, the first detector 202a and the second detector 202b of the detection device 200b are in contact with each other. In some embodiments, the conductive layer 220a of the first detector 202a is in contact with the substrate 210b of the second detector 202b, but the disclosure is not limited thereto.

[0055] Fig.11 is a cross-sectional view of a detection device according to aspects of the present disclosure. It should be noted that Fig. 9 and Fig.11 Like elements in the drawings are indicated by like numerals and are referred to in the following for simplicity. Fig.11 Omitted from the description Fig. 9 and Fig.11In some embodiments, a detection device 200c is provided. As mentioned above, the detection device 200c may include any combination of the aforementioned detectors 100a, 100b, 100c, 100d, and 100e, but is not limited thereto. In some embodiments, the detection device 200c includes a first detector 202a and a second detector 202b. Fig. 9 Compared to the first detector 202a and the second detector 202b of the detection device 200a shown in , the first detector 202a and the second detector 202b of the detection device 200c are in contact with each other. In some embodiments, the substrate 210a of the first detector 202a is in contact with the conductive layer 220b of the second detector 202b, but the present disclosure is not limited thereto. In such embodiments, the through passage 250a of the first detector 202a is used as a liquid inlet, and the groove 240b of the second detector 202b is used as a liquid outlet. It should be noted that since the sum of the widths W2 of the through passages 250b-1, 250b-2 is equal to or greater than the width W1 of the through passage 250a, when the liquid enters the detection device 200c from the through passage 250a and travels through the groove 240a and the through passages 250b-1, 250b-2, the liquid can be discharged through the through passages 250b-1 and 250b-2. In some comparison methods, if the sum of the widths W2 of the through passages 250b-1, 250b-2 is smaller than the width W1 of the through passage 250a, the liquid may not be discharged sufficiently quickly. Therefore, stagnation may be caused in the groove 240a and the through passage 250a. Therefore, the detection device 200c suffers from malfunction.

[0056] Fig.12 is a cross-sectional view of a detection device according to aspects of the present disclosure. It should be noted that Fig.11 and Fig.12 Like elements in the drawings are indicated by like numerals and are referred to in the following for simplicity. Fig.12 Omitted from the description Fig.11 and Fig.12 In some embodiments, a detection device 200d is provided. As mentioned above, the detection device 200d may include any combination of the aforementioned detectors 100a, 100b, 100c, 100d, and 100e, but is not limited thereto. In some embodiments, the detection device 200d includes a first detector 202a and a second detector 202b. Fig.11Compared to the detection device 200c shown in FIG. 2 , the detection device 200d further includes a dielectric layer 260. The dielectric layer 260 is used as a sealing layer or packaging material for supporting and integrating the detectors 202a and 202b. In some embodiments, the dielectric layer 260 may include a printed circuit board (PCB). In other embodiments, the dielectric layer 260 may include a plastic material, such as perfluoroalkoxyalkane (PFA) or polytetrafluoroethylene (PTFE). In some embodiments, the substrate 210b is placed between the insulating layer 230b and the dielectric layer 260. In some embodiments, the dielectric layer 260 includes a plurality of holes 262-1 and 262-2 to 262-n. It should be noted that the number of holes 262-1 and 262-2 to 262-n is equal to the number of through-paths 250b-1 and 250b-2 to 250b-n of the second detector 202b. For example, when there are two through-vias 250b-1 and 250b-2 in the second detector 202b, there are two holes 262-1 and 262-2 in the dielectric layer 260. The holes 262-1 and 262-2 are all coupled to the groove 240b. In some embodiments, each of the holes 262-1 and 262-2 is aligned with one of the through-vias 250b-1 and 250b-2, but the disclosure is not limited thereto. In some embodiments, the holes 262-1 and 262-2 include a length, a diameter, or a width W3, respectively, and the width W3 of the holes 262-1 and 262-2 is equal to or greater than the width W2 of the through-vias 250b-1 and 250b-2.

[0057] Still refer to Fig.12 , in such embodiments, holes 262-1 and 262-2 are used as liquid outlets. It should be noted that since the width W3 of holes 262-1 and 262-2 is equal to or greater than the width W2 of through passages 250b-1 and 250b-2, the sum of the widths W3 of holes 262-1 and 262-2 is equal to or greater than the width W1 of through passage 250a. Therefore, when liquid enters detection device 200d from through passage 250a and travels through groove 240a, through passages 250b-1, 250b-2 and groove 240b, the liquid can be discharged through holes 262-1 and 262-2. Therefore, liquid stagnation in groove 240b, through passages 250b-1, 250b-2, groove 240a and through passage 250a can be alleviated.

[0058] Fig.13 is a cross-sectional view of a detection device according to aspects of the present disclosure. It should be noted that Fig. 9 and Fig.13 Like elements in the drawings are indicated by like numerals and are referred to in the following for simplicity. Fig.13 Omitted from the description Fig. 9 and Fig.13Details of the same elements shown in . In some embodiments, a detection device 200e is provided. As mentioned above, the detection device 200e may include any combination of the aforementioned detectors 100a, 100b, 100c, 100d and 100e, but is not limited thereto. In some embodiments, the detection device 200e includes a first detector 202a and a second detector 202b. The first detector 202a includes a substrate, a conductive layer, and an insulating layer between the substrate and the conductive layer, while the second detector 202b includes a substrate, a conductive layer, and an insulating layer between the conductive layer and the substrate. In such embodiments, the substrate of the first detector 202a contacts the substrate of the second detector 202b to form a substrate 210, the conductive layer of the first detector 202a contacts the conductive layer of the second detector 202b to form a conductive layer 220, and the insulating layer of the first detector 202a contacts the insulating layer of the second detector 202b to form an insulating layer 230, as Fig.13 2. The first detector 202a includes a groove 240a extending through the substrate 210 and the second detector 202b includes a groove 240b extending through the substrate 210. The groove 240a and the groove 240b are separated from each other. The first detector 202a includes a through-path 250a extending through the conductive layer 220 and the insulating layer 230, and the second detector 202b includes a plurality of through-paths 250b extending through the conductive layer 220 and the insulating layer 230. The through-paths 250a, 250b-1 and 250b-2 are all separated from each other. The through-path 250a is coupled to the groove 240a, and the through-path 250b is coupled to the groove 240b. In addition, for different detection purposes, the width W2 of the through-paths 250b-1, 250b-2 is smaller than the width W1 of the through-path 250a. In such embodiments, both the groove 240a of the first detector 202a and the groove 240b of the second detector 202b serve as liquid inlets, and all of the through passages 250a, 250b-1, 250b-2 of the first detector 202a and the second detector 202b serve as liquid outlets.

[0059] Fig.14 1 is a flow chart representing a method 10 for detecting particles in a chemical liquid according to aspects of the present disclosure. In some embodiments, method 10 can be used to detect the purity or characteristics of a chemical liquid. Method 10 includes several operations (11, 12, 13, 14, 15a and 15b). Method 10 will be further described according to one or more embodiments. It should be noted that the operations of method 10 can be rearranged or otherwise modified within the scope of various aspects. It should be further noted that additional processes can be provided before, during, and after method 10, and some other processes may be only briefly described herein. Therefore, other implementations are possible within the scope of the various aspects described herein.

[0060] The method 10 for detecting particles in a chemical liquid can be performed using the detection device 200a, 200b, 200c, 200d or 200e mentioned above, but is not limited thereto. In addition, the method 10 for detecting particles in a chemical liquid can be performed by the first detector 202a in any combination of the detection devices 200a, 200b, 200c, 200d or 200e.

[0061] Fig.15 is a schematic diagram illustrating a portion of a detection device in some embodiments of a method for detecting particles in a chemical liquid according to aspects of the present disclosure, and Fig.16A and Fig. 16B is a diagram illustrating detection results according to aspects of the present disclosure. At operation 11, a detection device is provided. In some embodiments, the detection device includes a detector (eg, first detector 202a), wherein the first detector 202a has a through passage 250a having a length L between approximately 100 μm and approximately 1000 μm.

[0062] At operation 12, the chemical liquid 300 is provided to flow through the detection device, that is, the first detector 202a. Fig.15 , the chemical liquid 300 flows through the through passage 250a.

[0063] At operation 13, during the flow of the chemical liquid, the capacitance of the detection device is measured. It should be noted that in the first detector 202a, the conductive layer 220 has a pattern having a first portion and a second portion separated from each other by the through-path 250a. Using the chemical liquid 300 traveling through the through-path 250a, the conductive layer 220 having the pattern acts as a capacitor having the first portion as a first electrode, the second portion as a second electrode, and the chemical liquid 300 as a dielectric material therebetween. The capacitance can be obtained during the flow of the chemical liquid 300 through the through-path 250a. In some embodiments, the capacitor formed by the first electrode, the second electrode, and the chemical liquid 300 has a capacitance equal to or greater than approximately 1 nanofarad (nF). In some embodiments, this capacitor is called a nanocapacitor.

[0064] At operation 14, the dielectric constant of the chemical liquid 300 is calculated based on the capacitance of the detection device. It should be understood that the capacitance of the capacitor is related to the dielectric constant of the dielectric material and the distance between the two electrodes. In some embodiments, since the distance between the two electrodes is fixed, the dielectric constant of the dielectric material is used as the main parameter of the capacitance. Therefore, the dielectric constant of the chemical liquid 300 can be obtained during the chemical liquid 300 flows through the detection device (i.e., the first detector 202a).

[0065] refer to Fig.16A and Fig. 16B In some embodiments, a graph illustrating the detection result may be obtained. The horizontal axis of the graph may be the time during which the chemical liquid passes through the through passage 250a, and the vertical axis may be the dielectric constant calculated based on the capacitance of the detection device. At operation 15a, when the dielectric constant of the chemical liquid is between the upper limit and the lower limit, as Fig.16A In some embodiments, when the dielectric constant of the chemical liquid 300 is greater than the upper limit or less than the lower limit, as shown in FIG. Fig. 16B As shown in the figure, the chemical liquid was identified as abnormal.

[0066] It should be noted that the characteristics of the chemical liquid 300 can be easily determined by observing the dielectric constant of the chemical liquid 300. For example, when the dielectric constant of the chemical liquid 300 is between the upper limit and the lower limit, as shown in FIG. Fig.16A As shown in FIG. 1 , it can be inferred that the chemical liquid has been produced, stored or transported without contamination or with low contamination, and the characteristics of the chemical liquid remain unaffected. When the dielectric constant of the chemical liquid 300 is greater than the upper limit or less than the lower limit, such as Fig. 16B As shown in FIG. 3 , it can be inferred that particles or contamination are in the chemical liquid 300 , and that such particles or contamination have changed the properties of the chemical liquid 300 and thus changed the dielectric constant of the chemical liquid 300 .

[0067] Fig.17 is a flow chart representing a method 20 for detecting particles in a chemical liquid according to aspects of the present disclosure. In some embodiments, method 20 can be used to detect the purity or characteristics of a chemical liquid. Method 20 includes several operations (21, 22, 23, 24, 25, 26a, and 26b). Method 20 will be further described according to one or more embodiments. It should be noted that the operations of method 20 may be rearranged or otherwise modified within the scope of various aspects. It should be further noted that additional processes may be provided before, during, and after method 20, and some other processes may be only briefly described herein. Therefore, other implementations are possible within the scope of the various aspects described herein.

[0068] The method 20 for detecting particles in a chemical liquid can be performed using the detection device 200a, 200b, 200c, 200d or 200e mentioned above, but is not limited thereto. In addition, the method 20 for detecting particles in a chemical liquid can be performed by the second detector 202b in any combination of the detection devices 200a, 200b, 200c, 200d or 200e.

[0069] Fig.18 is a schematic diagram illustrating a portion of a detection device in some embodiments of a method for detecting particles in a chemical liquid according to aspects of the present disclosure, and Fig.19A and Fig.19Bis a diagram illustrating detection results according to aspects of the present disclosure. At operation 21, a detection device is provided. In some embodiments, the detection device includes a detector (eg, second detector 202b), wherein the second detector 202b has a through passage 250b having a length L between approximately 1 μm and approximately 10 μm.

[0070] At operation 22, a chemical liquid 300 is provided to flow through the detection device. Fig.18 , the chemical liquid 300 flows through the through passage 250b.

[0071] At operation 23, the capacitance of the detection device is measured during the flow of the chemical liquid. It should be noted that in the second detector 202b, the conductive layer 220 has a pattern with a first portion and a second portion separated from each other by a through-path 250b. Using the chemical liquid 300 traveling through the through-path 250b, the conductive layer 220 having the pattern is used as a capacitor having the first portion as a first electrode, the second portion as a second electrode, and the chemical liquid 300 as a dielectric material therebetween. The capacitance can be obtained during the flow of the chemical liquid through the through-path 250b-1. In some embodiments, the capacitor formed by the first electrode, the second electrode, and the chemical liquid 300 has a capacitance less than or equal to approximately 0.01 picofarad (pF). In some embodiments, this capacitor is called a nanocapacitor.

[0072] At operation 24, the dielectric constant of the chemical liquid 300 is calculated based on the capacitance of the detection device. As mentioned above, the capacitance of the capacitor is related to the dielectric constant of the dielectric material and the distance between the two electrodes. In some embodiments, since the distance between the two electrodes is fixed, the dielectric constant of the dielectric material is used as the main parameter of the capacitance. Therefore, the dielectric constant of the chemical liquid 300 can be obtained during the chemical liquid 300 flows through the detection device (i.e., the second detector 202b).

[0073] At operation 25, in some embodiments, the dielectric constant of the chemical liquid 300 may change during the flow of the chemical liquid 300 through the detection device. In such embodiments, such dielectric constant change is calculated and recorded.

[0074] refer to Fig.19A and Fig.19B In some embodiments, a graph illustrating the detection result may be obtained. The horizontal axis of the graph may be the time during which the chemical liquid passes through the through passage 250b, and the vertical axis may be the dielectric constant calculated based on the capacitance of the detection device. At operation 26a, when the dielectric constant of the chemical liquid is between the upper limit and the lower limit, as Fig.18In the example shown in FIG. 26 , the chemical liquid 300 is determined to be normal. In addition, at operation 26a, when the amount of change in the dielectric constant is less than a value, the chemical liquid 300 is determined to be normal. In some embodiments, when the amount of change in the dielectric constant is greater than the value, such as Fig.19B As shown in FIG. 1 , the chemical liquid 300 is determined to be abnormal.

[0075] Since particles can change the characteristics of the chemical liquid 300 and the dielectric constant of the chemical liquid 300, it is easy to determine whether particles exist in the chemical liquid 300 by observing the dielectric constant of the chemical liquid 300. In some embodiments, when the dielectric constant of the chemical liquid 300 is between the upper limit and the lower limit, such as Fig.19A In the embodiment shown in FIG. 1 , it can be inferred that the chemical liquid 300 has been produced, stored, or transported without particles or with fewer particles. In other embodiments, when the dielectric constant of the chemical liquid 300 is greater than an upper limit or less than a lower limit, it can be inferred that particles or contamination are in the chemical liquid 300, and such particles have changed the characteristics of the chemical liquid 300 and thus changed the dielectric constant of the chemical liquid 300.

[0076] In some embodiments, when the particles are nanoparticles, such particles may not be sufficient to change the dielectric constant of the chemical liquid 300 beyond the upper or lower limit, but do cause the dielectric constant to change. In such embodiments, the dielectric constant change is recorded, such as Fig.19B In some embodiments, when the amount of dielectric constant change is less than a value, it is inferred that the amount of nanoparticles in the chemical liquid 300 is insufficient to cause an unstable dielectric constant, and the chemical liquid 300 can be determined to be normal. In some embodiments, when the amount of dielectric constant change is greater than a value, it is inferred that the amount of nanoparticles in the chemical liquid 300 is sufficient to cause an unstable dielectric constant, and the chemical liquid 300 can be determined to be abnormal.

[0077] It will be understood that in the aforementioned methods 10 and 20, the chemical liquid to be tested may be a liquid having a dielectric constant less than 100, but the disclosure is not limited thereto. In some embodiments, the chemical liquid to be tested may be a liquid having a dielectric constant less than 80, but the disclosure is not limited thereto.

[0078] It will be appreciated that in the aforementioned method, the detection device may include a first detector 202a and a second detector 202b so that when the chemical liquid 300 flows into the detection device, the chemical liquid 300 travels through the larger through-passage 250a and the smaller through-passage 250b. Thus, both the characteristics and the potential dielectric constant change are obtained. Therefore, contamination caused by particles or nanoparticles can be easily detected at an early stage.

[0079] According to one embodiment of the present invention, a detector is provided, comprising: a substrate comprising a first surface and a second surface opposite to the first surface; a funnel-shaped groove extending from the second surface of the substrate to the first surface of the substrate; a conductive layer disposed below the first surface of the substrate; an insulating layer disposed between the substrate and the conductive layer; and a first through-via extending through the conductive layer and the insulating layer and coupled to the funnel-shaped groove.

[0080] According to one embodiment of the present invention, a detection device is provided. The detection device includes: a first detector and a second detector. The first detector includes: a first substrate having a first groove; a first conductive layer; a first insulating layer placed between the first substrate and the first conductive layer; and a first through-path extending through the first conductive layer and the first insulating layer. In some embodiments, a portion of the first insulating layer is exposed through the bottom of the first groove. In some embodiments, the first through-path is coupled to the first groove. The second detector includes: a second substrate having a second groove; a second conductive layer; a second insulating layer placed between the second substrate and the second conductive layer; and a plurality of second through-paths extending through the second conductive layer and the second insulating layer. In some embodiments, a portion of the second insulating layer is exposed through the bottom of the second groove. In some embodiments, the second through-path is coupled to the second groove. In some embodiments, the first through-path has a first width, each of the second through-paths has a second width, and the second width is less than the first width.

[0081] According to one embodiment of the present invention, a method for detecting particles in a liquid is provided. The method comprises the following operations. A detection device is provided. A chemical liquid is provided to flow through the detection device. The capacitance of the detection device is measured during the flow of the chemical liquid. The dielectric constant of the chemical liquid is calculated based on the capacitance of the detection device. When the dielectric constant of the chemical liquid is between an upper limit and a lower limit, the chemical liquid is determined to be normal.

[0082] The features of several embodiments are summarized above so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art will appreciate that they can easily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purpose and / or achieving the same advantages of the embodiments described herein. Those skilled in the art will also appreciate that such equivalent constructions do not depart from the spirit and scope of the present disclosure and that various changes, substitutions, and modifications may be made herein without departing from the spirit and scope of the present disclosure.

[0083] Explanation of symbols

[0084] 10 Methods

[0085] 11 Operation

[0086] 12 Operations

[0087] 13 Operation

[0088] 14 Operation

[0089] 15a Operation

[0090] 15b Operation

[0091] 20 Methods

[0092] 21 Operations

[0093] 22 Operations

[0094] 23 Operations

[0095] 24 Operations

[0096] 25 Operations

[0097] 26a Operation

[0098] 26b Operation

[0099] 100a Detector

[0100] 100b Detector

[0101] 100c Detector

[0102] 100d detector

[0103] 100e Detector

[0104] 110 Substrate

[0105] 112a First surface

[0106] 112b Second surface

[0107] 120 Conductive layer

[0108] 122a Part 1

[0109] 122a-1 Part I

[0110] 122a-2 Part I

[0111] 122a-3 Part I

[0112] 122a-4 Part I

[0113] 122a-5 Part I

[0114] 122b Part 2

[0115] 122b-1 Part II

[0116] 122b-2 Part II

[0117] 122b-3 Part II

[0118] 122b-4 Part 2

[0119] 122b-5 Part II

[0120] 130 Insulation layer

[0121] 140 Funnel-shaped groove

[0122] 142a Upper opening

[0123] 142b Lower opening

[0124] 150 Through Passage

[0125] 150-1 Through Passage

[0126] 150-2 Through Passage

[0127] 150-3 Through Passage

[0128] 150-4 Through Passage

[0129] 150-5 Through Passage

[0130] 200a Detection device

[0131] 200b Detection Device

[0132] 200c Detection Device

[0133] 200d Detection Device

[0134] 200e Detection Device

[0135] 202a First detector

[0136] 202b Second detector

[0137] 210 Substrate

[0138] 210a Substrate

[0139] 210b Substrate

[0140] 220 Conductive layer

[0141] 220a Conductive layer

[0142] 220b Conductive layer

[0143] 230 Insulation layer

[0144] 230a Insulation layer

[0145] 230b Insulation layer

[0146] 240a Groove

[0147] 240b Groove

[0148] 250a Through passage

[0149] 250b-1 Through Passage

[0150] 250b-2 Through Passage

[0151] 260 Dielectric layer

[0152] 262-1 hole

[0153] 262-2 hole

[0154] 300 Chemical Liquids

[0155] L Length

[0156] T Thickness

[0157] WWidth

[0158] W1 Width

[0159] W2 Width

[0160] W3 Width

Claims

1. A detector comprising: a substrate comprising a first surface and a second surface opposite to the first surface; a funnel-shaped groove extending from the second surface of the substrate to the first surface of the substrate, wherein the funnel-shaped groove has an upper opening in the second surface and a lower opening in the first surface, and a width of the upper opening is greater than a width of the lower opening; a conductive layer disposed below the first surface of the substrate; an insulating layer disposed between the substrate and the conductive layer; a first through via extending through the conductive layer and the insulating layer and coupled to the funnel-shaped groove; and a second through-via extending through the conductive layer and the insulating layer, wherein the second through-via is separated from the first through-via and coupled to the funnel-shaped groove, a width of the first through-via and a width of the second through-via being smaller than the width of the lower opening of the funnel-shaped groove, wherein the thickness of the conductive layer is equal to or greater than the thickness of the insulating layer, The conductive layer includes a first portion and a second portion separated from each other by the first through-via, a side wall of the first portion and a side wall of the second portion are exposed by the first through-via, and the first portion of the conductive layer, the first through-via, and the second portion of the conductive layer form a capacitor. The detector according to claim 1 , wherein the conductive layer comprises a metal layer or a doped semiconductor layer.

3. The detector of claim 1, wherein the conductive layer has a pattern, and the insulating layer is exposed through the pattern.

4. The detector according to claim 1, wherein the conductive layer includes a third portion and a fourth portion, the third portion and the fourth portion are separated from each other by the second through-passage, and the third portion and the fourth portion of the conductive layer are separated from the first portion and the second portion of the conductive layer. 5 . The detector according to claim 4 , wherein the first portion and the second portion of the conductive layer extend in the same direction, and the third portion and the fourth portion of the conductive layer extend in the same direction. 6 . The detector according to claim 5 , wherein the first portion, the second portion, the third portion, and the fourth portion of the conductive layer extend in the same direction. 7 . The detector of claim 4 , wherein the first portion and the second portion of the conductive layer extend in different directions, and the third portion and the fourth portion of the conductive layer extend in different directions.

8. A detection device, comprising: A first detector comprising: A first substrate having a first groove; A first conductive layer having a first pattern, wherein the first pattern includes a first portion serving as a first electrode and a second portion serving as a second electrode; A first insulating layer is disposed between the first substrate and the first conductive layer, wherein a portion of the first insulating layer is exposed through a bottom of the first groove; and a first through via extending through the first conductive layer and the first insulating layer and coupled to the first groove; and A second detector comprising: a second substrate having a second groove; a second conductive layer having a second pattern, wherein the second pattern includes a third portion serving as a third electrode and a fourth portion serving as a fourth electrode; A second insulating layer is disposed between the second substrate and the second conductive layer, wherein a portion of the second insulating layer is exposed through a bottom of the second groove; and a plurality of second through vias extending through the second conductive layer and the second insulating layer and coupled to the second groove, wherein the first through-via has a first width, each of the second through-vias has a second width, and the second width is smaller than the first width, The first detector and the second detector are in contact with each other, and the first substrate is in contact with the second conductive layer. 9 . The detection device according to claim 8 , wherein a sum of the second widths of the plurality of second through-vias is equal to or greater than the first width of the first through-via. 10 . The detection device of claim 8 , wherein the first through-via is offset from the plurality of second through-vias.

11. The detection device of claim 8, further comprising a dielectric layer disposed under the second substrate, wherein the dielectric layer comprises a plurality of holes, and each of the plurality of holes has a third width equal to or greater than the second width of the plurality of second through vias. 12 . The detection device of claim 11 , wherein the plurality of holes are coupled to the second groove.

13. The detection device of claim 11, wherein each of the plurality of holes is aligned with one of the plurality of second through-vias. The detection device according to claim 8 , wherein the first conductive layer and the second conductive layer comprise different materials.

15. A method for detecting particles in a liquid, comprising: A detection device is provided, wherein the detection device includes a first detector and a second detector, wherein the first detector includes a first insulating layer, a first substrate having a first groove, and a first conductive layer, wherein the first conductive layer has a first pattern, the first pattern includes a first portion used as a first electrode and a second portion used as a second electrode, wherein the first portion and the second portion are separated from each other by a first through-path, and the second detector includes a second insulating layer, a second substrate having a second groove, and a second conductive layer, wherein the second conductive layer has a second pattern, the second pattern includes a third portion used as a third electrode and a fourth portion used as a fourth electrode, wherein the third portion and the fourth portion are separated from each other by a second through-path, wherein the first detector and the second detector are in contact with each other, and the first substrate is in contact with the second conductive layer; providing a chemical liquid to flow through the detection device; measuring the capacitance of the detection device during the flow of the chemical liquid; calculating the dielectric constant of the chemical liquid according to the capacitance of the detection device; and When the dielectric constant of the chemical liquid is between a predetermined upper limit and a predetermined lower limit, the chemical liquid is determined to be normal. 16 . The method according to claim 15 , further comprising determining the chemical liquid to be abnormal when the dielectric constant of the chemical liquid is greater than the upper limit or less than the lower limit.

17. The method according to claim 15, further comprising: calculating an amount by which a dielectric constant changes during said flow of said chemical liquid; and When the amount by which the dielectric constant changes is greater than a predetermined value, the chemical liquid is determined to be abnormal. 18 . The method of claim 15 , wherein each of the first conductive layer and the second conductive layer comprises a metal layer or a doped semiconductor layer. The method of claim 15 , wherein the first conductive layer and the second conductive layer comprise different materials. 20 . The method of claim 19 , wherein a width of the first through-via and a width of the second through-via are smaller than a width of a lower opening of the first groove.

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