Semiconductor packaging device, light emitting device and method for manufacturing semiconductor integrated circuit

Abstract

The present invention provides a method for manufacturing a semiconductor packaging device, a light-emitting device and a semiconductor integrated circuit. During the heating process of a reflow furnace, the air inside the semiconductor packaging device is discharged from the exhaust holes provided on the solder pad at the bottom of the bowl cup of the semiconductor packaging device. At the same time, the welding material melts and gradually infiltrates the exhaust holes of the solder pad at the bottom of the bowl cup, so that the melted welding material on the solder pad at the bottom of the bowl cup is gradually cooled and condensed into solid metal to seal the exhaust holes, thereby avoiding the occurrence of organic fillers inside the semiconductor packaging device, which are prone to aging and affect the performance of the semiconductor packaging device, thereby improving the reliability of the semiconductor packaging device; and because the semiconductor packaging device is always in a closed state after the internal air is discharged, external environmental pollutants cannot enter the semiconductor packaging device, thereby further improving the reliability of the semiconductor packaging device, so that the semiconductor packaging device can be better applied to application scenarios in various environments and is more conducive to promotion and use.

Description

Technical Field

[0001] The present invention relates to the field of LED (Light Emitting Diode), and in particular to a method for manufacturing a semiconductor packaging device, a light emitting device and a semiconductor integrated circuit. Background Art

[0002] At present, the installation and welding of semiconductor packaging devices generally adopts the reflow soldering method, in which the reflow soldering temperature will exceed 230°C. If there is a large amount of air inside the semiconductor packaging device, the air will expand rapidly as the temperature rises during the reflow soldering process, causing damage to the device. In order to avoid this phenomenon, the solution adopted by existing semiconductor packaging devices is to fill the gaps inside the device with organic materials to discharge or reduce the air inside the device. However, this solution has certain limitations. The internal organic filler has poor environmental adaptability and is easily aged by external substances and the environment, affecting the performance of the semiconductor packaging device. It can be seen that in the prior art, there are deficiencies in the air treatment solution during the reflow soldering process, resulting in low reliability of semiconductor packaging devices. Summary of the invention

[0003] The semiconductor packaging device, light emitting device and semiconductor integrated circuit manufacturing method provided by the present invention mainly solve the technical problem that the air treatment scheme in the prior art during the reflow soldering process is insufficient, resulting in low reliability of the semiconductor packaging device.

[0004] In order to solve the above technical problems, the present invention provides a semiconductor packaging device, which includes a base, and the base is composed of a non-metallic substrate and a metal pad. The metal pad penetrates the non-metallic substrate in the height direction, and the metal pad is provided with at least one exhaust hole, and the exhaust hole is used to discharge the air inside the semiconductor packaging device.

[0005] In one embodiment of the present invention, the metal pad includes a first metal pad and a second metal pad, the first metal pad and the second metal pad respectively penetrate the non-metal substrate in the height direction, and the first metal pad is isolated from the second metal pad by the non-metal substrate.

[0006] In one embodiment of the present invention, at least one exhaust hole is provided on the first metal pad, and / or at least one exhaust hole is provided on the second metal pad.

[0007] In one embodiment of the present invention, the semiconductor packaging device further comprises a shell, and the shell and the base form a bowl-cup structure; the shell and the base are integrally formed, or the shell is fixed to the base after being formed.

[0008] In one embodiment of the present invention, the semiconductor package device further comprises a top cover plate, and the top cover plate and the bowl-cup structure form a package structure.

[0009] In one embodiment of the present invention, the semiconductor package device further comprises a semiconductor operating element, wherein the semiconductor operating element is mounted on the base and directly contacts the metal pad.

[0010] In one embodiment of the present invention, the semiconductor working element is a semiconductor photoelectric conversion chip.

[0011] In order to solve the above problems, the present invention further provides a light emitting device, characterized in that it includes the semiconductor package device as described above, and the light emitting device is a lighting device, a light signal indicating device, a fill light device or a backlight device.

[0012] In order to solve the above problem, the present invention further provides a method for manufacturing a semiconductor integrated circuit, the method for manufacturing a semiconductor integrated circuit comprising:

[0013] S1: Use the steel mesh as a mold to print welding materials on the PCB circuit board;

[0014] S2: attaching the semiconductor package device with the exhaust hole on the pad to the corresponding welding material position of the PCB circuit board;

[0015] S3: placing the PCB circuit board with the semiconductor package device attached in S2 in a reflow oven for reflow heating. During the heating process of the reflow oven, the air inside the semiconductor package device is discharged from the exhaust holes of the solder pad at the bottom of the bowl cup, and the soldering material melts and gradually infiltrates the exhaust holes of the solder pad at the bottom of the bowl cup. During the cooling process of the reflow oven, the melted soldering material at the solder pad at the bottom of the bowl cup gradually cools and condenses into solid metal to close the exhaust holes, and the electrodes of the semiconductor package device are connected to the PCB circuit board to achieve electrical conduction.

[0016] S4: Test, inspect and package the devices obtained in S3 to form the required semiconductor integrated circuits.

[0017] In one embodiment of the present invention, in S2, it also includes a method for manufacturing a semiconductor packaging device with exhaust holes on the substrate:

[0018] S21: placing the conductive terminal in an electroplating tank to perform surface metal electroplating;

[0019] S22: Install the conductive terminal after electroplating in S21 in a stamping device, and use the stamping device and the mold to machine the conductive terminal to form the conductive terminal into a metal shape required for the base of the semiconductor packaging device and form at least one exhaust hole on the base pad.

[0020] In one embodiment of the present invention, after S22, the method further includes:

[0021] S23: combining the insulating material with the conductive terminal to form a bowl-cup prototype;

[0022] S24: installing the bowl and cup prototype obtained in S23 in a cutting machine to cut and shape the conductive terminals to form a bowl and cup;

[0023] S25: washing and baking the bowls and cups obtained in S24;

[0024] S26: applying a first adhesive to the bottom pad of the bowl obtained in S25, and then placing a semiconductor working element on the first adhesive on the bottom pad;

[0025] S27: heating the bowl with the semiconductor working element fixed thereon obtained in S26 to solidify the first adhesive, thereby fixing the semiconductor element on the pad at the bottom of the bowl;

[0026] S28: connecting the positive and negative electrodes of the semiconductor working element obtained in S27 to the positive and negative electrodes of the base pad using a conductive circuit to achieve electrical conduction;

[0027] S29: coating the second adhesive on the upper edge of the bowl obtained in S28, placing the top cover plate on the second adhesive, and curing the second adhesive.

[0028] The beneficial effects of the present invention are:

[0029] The semiconductor packaging device provided by the present invention includes a base, which is composed of a non-metallic substrate and a metal pad. The metal pad passes through the non-metallic substrate in the height direction. The metal pad is provided with at least one exhaust hole, and the exhaust hole is used to exhaust the air inside the semiconductor packaging device; the problem that the treatment scheme of air in the reflow soldering process in the prior art is insufficient, resulting in low reliability of the semiconductor packaging device. That is, in the present invention, during the heating and temperature rise process of the reflow furnace, the air inside the semiconductor packaging device is discharged from the exhaust hole of the pad at the bottom of the bowl cup, and the welding material melts and gradually infiltrates the exhaust hole of the pad at the bottom of the bowl cup, so that the melted welding material at the pad at the bottom of the bowl cup gradually cools and condenses into solid metal to close the exhaust hole, thereby avoiding the phenomenon that the organic filler inside the semiconductor packaging device is prone to aging and affects the performance of the semiconductor packaging device, and improving the reliability of the semiconductor packaging device; and because the semiconductor packaging device is always in a closed state after the internal air is discharged, the external environmental pollutants cannot enter the semiconductor packaging device, further improving the reliability of the semiconductor packaging device, so that the semiconductor packaging device can be better applied to application scenarios in various environments, and is more conducive to promotion and use. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1-1 A top view of a base of a semiconductor package device provided in the first embodiment of the present invention;

[0031] Figure 1-2 for Figure 1-1 A perspective view of a base of a semiconductor package device shown;

[0032] Figure 2-1 for Figure 1-1 A top view 1 showing a base with a vent hole disposed on the pad;

[0033] Figure 2-2 for Figure 1-1 A second top view showing that the pad of the base is provided with an exhaust hole;

[0034] Figure 2-3 for Figure 1-1 The top view of the base with vent holes on the pad is shown Figure 3 ;

[0035] Figure 2-4 for Figure 1-1 The top view of the base with vent holes on the pad is shown Figure 4 ;

[0036] Figure 2-5 for Figure 1-1 The top view of the base with vent holes on the pad is shown Figure 5 ;

[0037] Figure 2-6 for Figure 1-1 The top view of the base with vent holes on the pad is shown Figure 6 ;

[0038] Figure 2-7 for Figure 1-1 A top view of the base with a vent hole on the pad shown in FIG7;

[0039] Figure 2-8 for Figure 1-1 A top view 8 of the base with a vent hole on the pad shown;

[0040] Figure 2-9 for Figure 1-1 A top view of the base with a vent hole on the pad shown in FIG9;

[0041] Figure 2-10 for Figure 1-1 A top view 10 showing a base with a vent hole disposed on the pad;

[0042] Figure 3 A three-dimensional diagram of a semiconductor packaging device is provided for the first embodiment of the present invention;

[0043] Figure 4A basic flow chart of a method for manufacturing a semiconductor integrated circuit is provided for the second embodiment of the present invention;

[0044] Figure 5 A basic flow chart of a method for manufacturing a semiconductor packaging device having an exhaust hole on a pad is provided for the second embodiment of the present invention;

[0045] Figure 6 A basic flow chart of a method for manufacturing a semiconductor packaging device having an exhaust hole on a pad is provided for the second embodiment of the present invention;

[0046] in, Figure 1-1 to Figure 1-2 Reference numeral 11 is a non-metal substrate, 12 is a metal pad, 121 is a first metal pad, and 122 is a second metal pad; Figure 2-1 to Figure 2-7 In the figure, reference numeral 11 is a non-metal substrate, 12 is a metal pad, 121 is a first metal pad, 122 is a second metal pad, 1210 and 1211 are exhaust holes on the first metal pad 121, and 1220 and 1221 are exhaust holes on the second metal pad 122; Figure 3 The reference numeral 1 is a base, 2 is a housing, 3 is a top cover plate, 4 is a semiconductor working element, 5 is a conductive circuit, 1210 is an exhaust hole on a first metal pad, and 1220 is an exhaust hole on a second metal pad. DETAILED DESCRIPTION

[0047] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the following is a further detailed description of the embodiments of the present invention through specific implementation methods combined with the accompanying drawings. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0048] Embodiment 1:

[0049] In order to solve the problem of low reliability of semiconductor packaging devices caused by the insufficiency of the air treatment solutions in the prior art during the reflow soldering, the present embodiment provides a semiconductor packaging device, which includes a base, wherein the base is composed of a non-metallic substrate and a metal pad, the metal pad penetrates the non-metallic substrate in the height direction, and the metal pad is provided with at least one exhaust hole, which is used to discharge the air inside the semiconductor packaging device.

[0050] In this example, see Figure 1-1 , Figure 1-2 As shown, the metal pad 12 includes a first metal pad 121 and a second metal pad 122. The first metal pad 121 and the second metal pad 122 respectively penetrate the non-metal substrate 11 along the height direction (as shown by the arrow in the figure), and the first metal pad 121 is isolated from the second metal pad 122 by the non-metal substrate 11.

[0051] In this embodiment, the first metal pad and the second metal pad can be made of various conductive materials, for example, various metal conductive materials, including but not limited to one or more of copper (Cu), silver (Ag), gold (Au), nickel (Ni), aluminum (Al), iron (Fe), tin (Sn), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), cobalt (Co), zinc (Zn), cadmium (Cd), molybdenum (Mo), platinum (Pt), mercury (Hg), gallium (Ga), and germanium (Ge); it can also be a mixed material containing conductive materials, such as conductive rubber.

[0052] Optionally, in this embodiment, a reflective layer may be provided in the functional area of ​​at least one of the first metal pad and the second metal pad to improve light extraction efficiency. The reflective layer may be any light reflection layer capable of improving light extraction efficiency, including but not limited to a silver plating layer.

[0053] Optionally, in this embodiment, the back side of at least one of the first metal pad and the second metal pad can be used as an electrode welding area. Of course, in some examples, the back side of at least one of the first metal pad and the second metal pad may not be used as a welding area, and the specific setting can be flexibly determined according to specific application requirements.

[0054] In this embodiment, at least one exhaust hole is provided on the first metal pad, and / or at least one exhaust hole is provided on the second metal pad, and the exhaust hole is used to exhaust the air inside the semiconductor packaging device; optionally, at least one exhaust hole is provided only on the first metal pad, or at least one exhaust hole is provided only on the second metal pad, or at least one exhaust hole is provided on the first metal pad and the second metal pad respectively.

[0055] In one example, see Figure 2-1 As shown, a vent hole 1210 is provided on the first metal pad 121 , and the vent hole 1210 is located in the middle area of ​​the first metal pad 121 .

[0056] In one example, see Figure 2-2 As shown, two exhaust holes 1210 and 1211 are provided on the first metal pad 121 , wherein the exhaust hole 1210 is located in the middle upper region of the first metal pad 121 , and the exhaust hole 1211 is located in the middle lower region of the first metal pad 121 .

[0057] In one example, see Figure 2-3 As shown, two exhaust holes 1210 and 1211 are provided on the first metal pad 121 , wherein the exhaust hole 1210 is located in the middle left region of the first metal pad 121 , and the exhaust hole 1211 is located in the middle right region of the first metal pad 121 .

[0058] In one example, see Figure 2-4 As shown, a vent hole 1220 is provided on the second metal pad 122 , and the vent hole 1220 is located in the middle area of ​​the second metal pad 122 .

[0059] In one example, see Figure 2-5 As shown, two exhaust holes 1220 and 1221 are provided on the second metal pad 122 , wherein the exhaust hole 1220 is located in the middle upper region of the second metal pad 122 , and the exhaust hole 1221 is located in the middle lower region of the second metal pad 122 .

[0060] In one example, see Figure 2-6 As shown, two exhaust holes 1220 and 1221 are provided on the second metal pad 122 , wherein the exhaust hole 1220 is located in the middle left region of the second metal pad 122 , and the exhaust hole 1221 is located in the middle right region of the second metal pad 122 .

[0061] In one example, see Figure 2-7 As shown, a vent hole 1210 is provided on the first metal pad 121 , wherein the vent hole 1210 is located in the middle area of ​​the first metal pad 121 , and a vent hole 1220 is provided on the second metal pad 122 , wherein the vent hole 1220 is located in the middle area of ​​the second metal pad 122 .

[0062] In one example, see Figure 2-8 As shown, a vent hole 1210 is provided on the first metal pad 121 , wherein the vent hole 1210 is located in the upper left corner area of ​​the first metal pad 121 , and a vent hole 1220 is provided on the second metal pad 122 , wherein the vent hole 1220 is located in the lower right corner area of ​​the second metal pad 122 .

[0063] In one example, see Figure 2-9 As shown, a vent hole 1210 is provided on the first metal pad 121 , wherein the vent hole 1210 is located in the lower right corner area of ​​the first metal pad 121 , and a vent hole 1220 is provided on the second metal pad 122 , wherein the vent hole 1220 is located in the lower left corner area of ​​the second metal pad 122 .

[0064] In one example, see Figure 2-10 As shown, a vent hole 1210 is provided on the first metal pad 121 , wherein the vent hole 1210 is located in the upper right corner area of ​​the first metal pad 121 , and a vent hole 1220 is provided on the second metal pad 122 , wherein the vent hole 1220 is located in the middle area of ​​the second metal pad 122 .

[0065] It is worth noting that in actual applications, the number and size of the exhaust holes and their locations on the first metal pad and the second metal pad can be flexibly adjusted according to specific application scenarios.

[0066] It is also worth noting that in the examples listed above, the exhaust holes are all circular. The exhaust holes can also be regular shapes such as rectangles, squares or ovals, or irregular shapes. In actual applications, they can be flexibly adjusted according to specific application scenarios.

[0067] In this example, see Figure 3 As shown, the semiconductor package device further includes a housing 2, wherein the housing and the base 1 form a bowl-cup structure. It can be understood that Figure 3 The housing and the base are shown to be arranged vertically, which is only an example arrangement. In some examples, the housing and the base may also be arranged to be inclined.

[0068] Optionally, the housing in this embodiment can be integrally formed with the base; the housing in this embodiment can also be formed first and then fixed to the base. In practical applications, the specific settings can be flexibly determined according to specific application requirements.

[0069] The shell in this embodiment can be made of various insulating materials, such as but not limited to various plastics, insulating ceramics, etc. For example, in one example, the materials that can be used for the shell include but are not limited to epoxy resin (EP), high temperature resistant nylon (PPA plastic), polyphthalamide (PPA), poly1,4-cyclohexylene dimethylene terephthalate (PCT), liquid crystal polymer (LCP), sheet molding compound (SMC), epoxy molding compound (EMC), unsaturated polyester (UP) resin, polyester resin (PET), polyethylene terephthalate), polycarbonate (PC), polyhexamethylene adipamide (nylon66), and glass fiber.

[0070] In this example, see Figure 3 As shown, the semiconductor package device further includes a top cover plate 3, wherein the top cover plate and the bowl-cup structure form a package structure.

[0071] Optionally, the top cover in this embodiment can also be integrally formed with the bowl and cup structure, that is, the top cover, the outer shell and the base are integrally formed, or the top cover and the outer shell are integrally formed and then fixed to the base; the top cover in this embodiment can also be formed first and then fixed to the bowl and cup structure. In actual applications, the specific settings can be flexibly determined according to specific application requirements.

[0072] Optionally, the material of the top cover in this embodiment may be the same as or different from that of the outer shell. In practical applications, the specific settings may be flexibly determined according to specific application requirements.

[0073] It should be understood that the method for forming the housing in this embodiment can also be flexibly selected, for example, it can be formed by, but not limited to, injection molding.

[0074] In this example, see Figure 3 As shown, the semiconductor package device further includes a semiconductor working element 4, which is mounted on the base 1 and directly contacts the metal pad 12. Optionally, the semiconductor working element 4 is a semiconductor photoelectric conversion chip.

[0075] It should be understood that the color of the light emitted by the semiconductor package device provided in this embodiment and presented to the user can be flexibly set according to actual needs and application scenarios. The color of the light emitted by the semiconductor package device and presented can be flexibly controlled by, but not limited to, the following factors: the color of the light emitted by the semiconductor photoelectric conversion chip itself, whether the semiconductor package device includes a light conversion glue layer, and the type of the light conversion glue layer when the semiconductor package device includes a light conversion glue layer.

[0076] In one example, the semiconductor packaging device may further include a lens adhesive layer or a diffusion adhesive layer disposed on the semiconductor photoelectric conversion chip (when a luminescence conversion adhesive layer is disposed on the semiconductor photoelectric conversion chip, it is disposed on the luminescence conversion adhesive layer).

[0077] It should be understood that the luminescence conversion adhesive layer can be a fluorescent adhesive layer containing fluorescent powder, or a colloid containing quantum dot photosensitive material, or other luminescence conversion adhesive or film that can achieve luminescence conversion, and can also include diffusion powder or silicon powder, etc. as needed; in this embodiment, the methods of forming a luminescence conversion adhesive layer, a lens adhesive layer or a diffusion adhesive layer on the semiconductor photoelectric conversion chip include but are not limited to dispensing, molding, spraying, pasting, etc.

[0078] For example, the luminescent conversion adhesive layer may include a phosphor adhesive layer, a fluorescent film, or a quantum dot QD film; the phosphor adhesive layer and the fluorescent film may be made of inorganic phosphors, which may be inorganic phosphors doped with rare earth elements, wherein the inorganic phosphors include but are not limited to at least one of silicate, aluminate, phosphate, nitride, and fluoride phosphors.

[0079] For another example, the quantum dot QD film can be made of quantum dot phosphors; the quantum dot phosphors include but are not limited to at least one of BaS, AgInS2, NaCl, Fe2O3, In2O3, InAs, InN, InP, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, GaAs, GaN, GaS, GaSe, InGaAs, MgSe, MgS, MgTe, PbS, PbSe, PbTe, Cd(SxSe1-x), BaTiO3, PbZrO3, CsPbCl3, CsPbBr3, and CsPbI3.

[0080] It should be understood that in this embodiment, the type of light emitted by the semiconductor photoelectric conversion chip itself can be visible light visible to the naked eye, or ultraviolet light or infrared light invisible to the naked eye; when the type of light emitted by the semiconductor photoelectric conversion chip itself is ultraviolet light or infrared light invisible to the naked eye, a light-emitting conversion adhesive layer can be provided on the semiconductor photoelectric conversion chip to convert the light invisible to the naked eye into visible light, so that the light emitted by the semiconductor photoelectric conversion chip is visible to the user. For example, when the light emitted by the semiconductor photoelectric conversion chip itself is ultraviolet light, if the semiconductor photoelectric conversion chip is to present white light visible to the user, the light-emitting conversion adhesive layer can be made by mixing red, green, and blue phosphors.

[0081] In this example, see Figure 3 As shown, the semiconductor package device further includes a conductive circuit 5 , which extends along the semiconductor working element 4 to a metal pad 12 (shown as a second metal pad 122 ) to achieve electrical conduction between the semiconductor working element 4 and the metal pad 12 .

[0082] It should be noted that Figure 3 The 1210 shown is a vent hole set on the first metal pad, and 1220 is a vent hole set on the second metal pad. This is only a feasible setting method, and any of the examples introduced above can be used. It is worth noting that in actual applications, the specific setting can be flexibly determined according to specific application requirements.

[0083] The semiconductor packaging device provided in this embodiment includes a base, which is composed of a non-metallic substrate and a metal pad. The metal pad passes through the non-metallic substrate in the height direction. The metal pad is provided with at least one exhaust hole, which is used to exhaust the air inside the semiconductor packaging device. The problem that the air treatment scheme in the prior art during the reflow soldering process is insufficient, resulting in low reliability of the semiconductor packaging device, is solved. That is, in this embodiment, the air inside the semiconductor packaging device is exhausted through the exhaust hole provided on the metal pad, thereby avoiding the phenomenon that the organic filler inside the semiconductor packaging device is prone to aging and affects the performance of the semiconductor packaging device, thereby improving the reliability and durability of the semiconductor packaging device, so that the semiconductor packaging device can be better applied to application scenarios in various environments, and is more conducive to promotion and use.

[0084] Embodiment 2:

[0085] In order to solve the problem that the prior art has insufficient air treatment solutions during the reflow process, resulting in low reliability of semiconductor packaging devices, this embodiment provides a method for manufacturing a semiconductor integrated circuit, see Figure 4 As shown, the method for manufacturing the semiconductor integrated circuit includes:

[0086] S401: Use the steel mesh as a mold to print welding materials on the PCB circuit board;

[0087] S402: attaching the semiconductor package device with the exhaust hole on the pad to the corresponding welding material position of the PCB circuit board;

[0088] S403: placing the PCB circuit board with the semiconductor package device attached in S402 in a reflow oven for reflow heating. During the heating process of the reflow oven, the air inside the semiconductor package device is discharged from the exhaust holes of the solder pad at the bottom of the bowl cup, and the soldering material melts and gradually infiltrates the exhaust holes of the solder pad at the bottom of the bowl cup. During the cooling process of the reflow oven, the melted soldering material at the solder pad at the bottom of the bowl cup gradually cools and condenses into solid metal to close the exhaust holes, and the electrodes of the semiconductor package device are connected to the PCB circuit board to achieve electrical conduction.

[0089] S404: Testing, inspecting and packaging the device obtained in S403 to form the required semiconductor integrated circuit.

[0090] In this embodiment, the welding material includes but is not limited to solder paste. In practical applications, the specific settings can be flexibly determined according to specific application requirements.

[0091] In this embodiment, S402 also includes a method for manufacturing a semiconductor package device with an exhaust hole on the pad, see Figure 5 As shown, the method for manufacturing the semiconductor packaging device with the exhaust hole on the pad includes:

[0092] S4021: placing the conductive terminal in an electroplating tank for surface metal electroplating;

[0093] S4022: Install the conductive terminal after S4021 electroplating in a stamping device, and use the stamping device and the mold to machine the conductive terminal to form the conductive terminal into the metal shape required by the semiconductor packaging device base and form at least one exhaust hole on the base pad.

[0094] It should be understood that the conductive terminals in this embodiment can be made of various conductive materials, for example, various metal conductive materials, including but not limited to one or more of copper (Cu), silver (Ag), gold (Au), nickel (Ni), aluminum (Al), iron (Fe), tin (Sn), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), cobalt (Co), zinc (Zn), cadmium (Cd), molybdenum (Mo), platinum (Pt), mercury (Hg), gallium (Ga), and germanium (Ge); it can also be a mixed material containing conductive materials, such as conductive rubber.

[0095] The insulating material in this embodiment can be composed of various organic materials or inorganic non-metallic materials, such as but not limited to various plastics, insulating ceramics, etc. For example, in one example, the materials that can be used include but are not limited to epoxy resin (EP, Epoxide resin), high temperature resistant nylon (PPA plastic), polyphthalamide (PPA, Polyphthalamide), poly 1,4-cyclohexylene dimethyleneterephthalate (PCT, Poly1,4-cyclohexylene dimethyleneterephthalate), liquid crystal polymer (LCP, Liquid Crystal Polymer), sheet molding compound (SMC, Sheetmolding compound), epoxy molding compound (EMC, Epoxy molding compound), unsaturated polyester (UP) resin, polyester resin (PET, Polyethylene terephthalate), polycarbonate (PC, Polycarbonate), polyhexamethylene adipamide (nylon 66), and glass fiber.

[0096] It should be understood that in this embodiment, at least one exhaust hole is formed on the base pad in S4022 to discharge the air inside the semiconductor packaging device during the subsequent reflow process; optionally, at least one exhaust hole is formed only on the first metal pad, or at least one exhaust hole is formed only on the second metal pad, or at least one exhaust hole is formed on the first metal pad and the second metal pad respectively.

[0097] In one example, see Figure 2-1 As shown, in S4022 , the conductive terminal is stamped into a metal shape required by the semiconductor package device base, and an exhaust hole 1210 is formed on the first metal pad 121 . The exhaust hole 1210 is located in the middle area of ​​the first metal pad 121 .

[0098] In one example, see Figure 2-2 As shown, in S4022, the conductive terminal is stamped into the metal shape required for the base of the semiconductor packaging device, and two exhaust holes 1210 and 1211 are formed on the first metal pad 121, wherein the exhaust hole 1210 is located in the middle upper area of ​​the first metal pad 121, and the exhaust hole 1211 is located in the middle lower area of ​​the first metal pad 121.

[0099] In one example, see Figure 2-3 As shown, in S4022, the conductive terminal is stamped into the metal shape required for the base of the semiconductor packaging device, and two exhaust holes 1210 and 1211 are formed on the first metal pad 121, wherein the exhaust hole 1210 is located in the middle left area of ​​the first metal pad 121, and the exhaust hole 1211 is located in the middle right area of ​​the first metal pad 121.

[0100] In one example, see Figure 2-4 As shown, in S4022 , the conductive terminal is punched into a metal shape required by the semiconductor package device base, and an exhaust hole 1220 is formed on the second metal pad 122 . The exhaust hole 1220 is located in the middle area of ​​the second metal pad 122 .

[0101] In one example, see Figure 2-5 As shown, in S4022, the conductive terminal is stamped into the metal shape required for the base of the semiconductor packaging device, and two exhaust holes 1220 and 1221 are formed on the second metal pad 122, wherein the exhaust hole 1220 is located in the middle upper area of ​​the second metal pad 122, and the exhaust hole 1221 is located in the middle lower area of ​​the second metal pad 122.

[0102] In one example, see Figure 2-6 As shown, in S4022, the conductive terminal is stamped into the metal shape required for the base of the semiconductor packaging device, and two exhaust holes 1220 and 1221 are formed on the second metal pad 122, wherein the exhaust hole 1220 is located in the middle left area of ​​the second metal pad 122, and the exhaust hole 1221 is located in the middle right area of ​​the second metal pad 122.

[0103] In one example, see Figure 2-7As shown, in S4022, the conductive terminal is stamped into the metal shape required for the base of the semiconductor packaging device, and an exhaust hole 1210 is formed on the first metal pad 121, wherein the exhaust hole 1210 is located in the middle area of ​​the first metal pad 121, and an exhaust hole 1220 is formed on the second metal pad 122, wherein the exhaust hole 1220 is located in the middle area of ​​the second metal pad 122.

[0104] In one example, see Figure 2-8 As shown, in S4022, the conductive terminal is stamped into the metal shape required for the base of the semiconductor packaging device, and an exhaust hole 1210 is formed on the first metal pad 121, wherein the exhaust hole 1210 is located in the upper left corner area of ​​the first metal pad 121, and an exhaust hole 1220 is formed on the second metal pad 122, wherein the exhaust hole 1220 is located in the lower right area of ​​the second metal pad 122.

[0105] In one example, see Figure 2-9 As shown, in S4022, the conductive terminal is stamped into the metal shape required for the base of the semiconductor packaging device, and an exhaust hole 1210 is formed on the first metal pad 121, wherein the exhaust hole 1210 is located in the lower right corner area of ​​the first metal pad 121, and an exhaust hole 1220 is formed on the second metal pad 122, wherein the exhaust hole 1220 is located in the lower left corner area of ​​the second metal pad 122.

[0106] In one example, see Figure 2-10 As shown, in S4022, the conductive terminal is stamped into the metal shape required for the base of the semiconductor packaging device, and an exhaust hole 1210 is formed on the first metal pad 121, wherein the exhaust hole 1210 is located in the upper right corner area of ​​the first metal pad 121, and an exhaust hole 1220 is formed on the second metal pad 122, wherein the exhaust hole 1220 is located in the middle area of ​​the second metal pad 122.

[0107] It is worth noting that, in practical applications, the number and size of the exhaust holes formed as well as the positions on the first metal pad and the second metal pad can be flexibly adjusted according to specific application scenarios.

[0108] It is also worth noting that in the examples listed above, circular exhaust holes are used as examples for explanation. Exhaust holes in regular shapes such as rectangular exhaust holes, square exhaust holes or elliptical exhaust holes can also be used. Exhaust holes in irregular shapes can also be used. In actual applications, flexible adjustments can be made according to specific application scenarios.

[0109] In this embodiment, after S4022, see Figure 6 As shown, it also includes:

[0110] S4023: Combine the insulating material with the conductive terminal to form a bowl-cup prototype;

[0111] S4024: installing the bowl and cup prototype obtained in S4023 in a cutting machine to cut and shape the conductive terminals to form a bowl and cup;

[0112] S4025: washing and baking the bowls and cups obtained in S4024;

[0113] S4026: applying a first adhesive to the bottom pad of the bowl obtained in S4025, and then placing a semiconductor working element on the first adhesive on the bottom pad;

[0114] S4027: heating the bowl with the semiconductor working element fixed thereon obtained in S4026 to solidify the first adhesive, thereby fixing the semiconductor element on the pad at the bottom of the bowl;

[0115] S4028: connecting the positive and negative electrodes of the semiconductor working element obtained in S4027 to the positive and negative electrodes of the base pad using a conductive circuit to achieve electrical conduction;

[0116] S4029: Coat the second adhesive on the upper edge of the bowl obtained in S4028, place the top cover plate on the second adhesive, and cure the second adhesive.

[0117] It should be noted that the first adhesive and the second adhesive may be the same adhesive or different adhesives. In practical applications, they may be flexibly adjusted according to specific application scenarios.

[0118] It is understandable that the method for manufacturing a semiconductor package device with an exhaust hole on the pad described above can be used to manufacture a semiconductor package device as shown in Example 1. Figure 3 The semiconductor package device shown in the figure can of course also be manufactured as in the first embodiment. Figure 3 Similar semiconductor packaging devices are not limited to Figure 3 A semiconductor packaging device shown can be flexibly adjusted according to specific application scenarios in actual applications.

[0119] The manufacturing method of the semiconductor integrated circuit provided in the present embodiment solves the problem that the prior art has insufficient air treatment solutions in the reflow soldering process, which causes the low reliability of the semiconductor packaging device. That is, in the present invention, during the heating and temperature rise process of the reflow furnace, the air inside the semiconductor packaging device is discharged from the exhaust hole of the bottom pad of the bowl cup, and the welding material melts and gradually infiltrates the exhaust hole of the bottom pad of the bowl cup, so that the melted welding material on the bottom pad of the bowl cup gradually cools and condenses into solid metal to close the exhaust hole, thereby avoiding the phenomenon that the organic filler inside the semiconductor packaging device is prone to aging and affects the performance of the semiconductor packaging device, and improving the reliability of the semiconductor packaging device; at the same time, since the semiconductor packaging device is always in a closed state after the internal air is discharged, the external environmental pollutants cannot enter the semiconductor packaging device, further improving the reliability of the semiconductor packaging device, so that the semiconductor packaging device can be better applied to application scenarios in various environments, and is more conducive to promotion and use.

[0120] Embodiment three:

[0121] This embodiment further provides a light emitting device, which includes the semiconductor package device exemplified in the above embodiment. The light emitting device in this embodiment can be a lighting device, a light signal indicating device, a fill light device or a backlight device. When it is a lighting device, it can specifically be a lighting device used in various fields, such as table lamps, fluorescent lamps, ceiling lamps, downlights, street lamps, projection lamps, etc. in daily life, and high beams, low beams, atmosphere lights, etc. in cars, and surgical lamps, low electromagnetic lighting lamps, and lighting lamps for various medical instruments in medicine, and various colored lights, landscape lighting lamps, advertising lights, etc. in decorative lighting; when it is a light signal indicating device, it can specifically be a light signal indicating device used in various fields, such as signal indicator lights in the traffic field, various signal status indicator lights on communication equipment in the communication field, various indicator lights on vehicles, etc.; when it is a fill light device, it can be a fill light in the photography field, such as a flash light and a fill light, and it can also be a plant fill light for plant fill light in the agricultural field, etc.; when it is a backlight device, it can be a backlight module used in various backlight fields, for example, it can be applied to displays, televisions, mobile terminals such as mobile phones, advertising machines and other equipment.

[0122] It should be understood that the above applications are merely several applications exemplified in this embodiment. It should be understood that the application of the semiconductor packaging device is not limited to the several fields exemplified above.

[0123] The above contents are further detailed descriptions of the embodiments of the present invention in combination with specific implementation methods, and it cannot be determined that the specific implementation of the present invention is limited to these descriptions. For ordinary technicians in the technical field to which the present invention belongs, several simple deductions or substitutions can be made without departing from the concept of the present invention, which should be regarded as falling within the protection scope of the present invention.

Claims

1. A method for manufacturing a semiconductor integrated circuit, characterized in that: The method for manufacturing the semiconductor integrated circuit comprises: S1: Use the steel mesh as a mold to print welding materials on the PCB circuit board; S2: attaching the semiconductor package device with the exhaust hole on the pad to the corresponding welding material position of the PCB circuit board; S3: placing the PCB circuit board with the semiconductor package device attached in S2 in a reflow oven for reflow heating. During the heating process of the reflow oven, the air inside the semiconductor package device is discharged from the exhaust holes of the solder pad at the bottom of the bowl cup, and the soldering material melts and gradually infiltrates the exhaust holes of the solder pad at the bottom of the bowl cup. During the cooling process of the reflow oven, the melted soldering material at the solder pad at the bottom of the bowl cup gradually cools and condenses into solid metal to close the exhaust holes, and the electrodes of the semiconductor package device are connected to the PCB circuit board to achieve electrical conduction. S4: Test, inspect and package the devices obtained in S3 to form the required semiconductor integrated circuits.

2. The method for manufacturing a semiconductor integrated circuit according to claim 1, wherein: In S2, it also includes a method for manufacturing a semiconductor packaging device having an exhaust hole on the pad: S21: placing the conductive terminal in an electroplating tank to perform surface metal electroplating; S22: Install the conductive terminal after electroplating in S21 in a stamping device, and use the stamping device and the mold to machine the conductive terminal to form the conductive terminal into a metal shape required for the base of the semiconductor packaging device and form at least one exhaust hole on the base pad.

3. The method for manufacturing a semiconductor integrated circuit according to claim 2, wherein: After S22, it also includes: S23: combining the insulating material with the conductive terminal to form a bowl-cup prototype; S24: installing the bowl and cup prototype obtained in S23 in a cutting machine to cut and shape the conductive terminals to form a bowl and cup; S25: washing and baking the bowls and cups obtained in S24; S26: applying a first adhesive on the bottom pad of the cup obtained in S25, and then placing a semiconductor working element on the first adhesive on the bottom pad; S27: heating the bowl with the semiconductor working element fixed thereon obtained in S26 to solidify the first adhesive, thereby fixing the semiconductor element on the pad at the bottom of the bowl; S28: connecting the positive and negative electrodes of the semiconductor working element obtained in S27 to the positive and negative electrodes of the base pad using a conductive circuit to achieve electrical conduction; S29: coating the second adhesive on the upper edge of the bowl obtained in S28, placing the top cover plate on the second adhesive, and curing the second adhesive.

4. The method for manufacturing a semiconductor integrated circuit according to claim 2, wherein: The semiconductor packaging device includes a base, which is composed of a non-metallic substrate and a metal pad. The metal pad penetrates the non-metallic substrate in the height direction. The metal pad is provided with at least one exhaust hole, and the exhaust hole is used to exhaust the air inside the semiconductor packaging device.

5. The method for manufacturing a semiconductor integrated circuit according to claim 4, wherein: The metal pad includes a first metal pad and a second metal pad. The first metal pad and the second metal pad respectively penetrate the non-metal substrate in a height direction. The first metal pad is isolated from the second metal pad by the non-metal substrate.

6. The method for manufacturing a semiconductor integrated circuit according to claim 5, wherein: At least one exhaust hole is provided on the first metal pad, and / or at least one exhaust hole is provided on the second metal pad.

7. The method for manufacturing a semiconductor integrated circuit according to any one of claims 4 to 6, characterized in that: The semiconductor packaging device also includes a shell, and the shell and the base form a bowl-cup structure; the shell and the base are integrally formed, or the shell is fixed on the base after being formed.

8. The method for manufacturing a semiconductor integrated circuit according to claim 7, wherein: The semiconductor package device further includes a top cover plate, and the top cover plate and the cup structure form a package structure.

9. The method for manufacturing a semiconductor integrated circuit according to any one of claims 4 to 6, characterized in that: The semiconductor package device further comprises a semiconductor operating element, which is mounted on the base and directly contacts the metal pad.

10. The method for manufacturing a semiconductor integrated circuit according to claim 9, wherein: The semiconductor working element is a semiconductor photoelectric conversion chip.

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