Heat treatment apparatus and heat treatment method

Abstract

A heat treatment apparatus and a heat treatment method are provided. A heat treatment apparatus, i.e., a heat treatment unit (U8), which performs heat treatment on a substrate on which a resist film is formed and which has been subjected to an exposure process, includes a heating plate (21) capable of supporting and heating the substrate; a chamber (41) covering a processing space (S) on the heating plate (21); a gas releasing portion (50) which releases a processing gas toward the substrate on the heating plate from above within the chamber (41); a gas supply portion, i.e., a gas flow path (81), which supplies the gas into the chamber from a position lower than the surface of the substrate; and an exhaust mechanism (70) which exhausts the chamber via an exhaust hole (71) provided above the processing space (S) and having an opening toward the lower side. According to the present application, the scattering of sublimates from the film on the substrate can be suppressed.

Description

TECHNICAL FIELD

[0001] The present application relates to a heat treatment apparatus and a heat treatment method. BACKGROUND

[0002] In order to achieve the finer of a resist pattern, there is proposed a technique of performing heat treatment on a substrate using a metal-containing resist, that is, a metal-containing resist (for example, refer to Patent Document 1).

[0003] PRIOR ART DOCUMENTS

[0004] PATENT DOCUMENTS

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2016-530565 SUMMARY

[0006] PROBLEMS TO BE SOLVED BY THE INVENTION

[0007] The present application provides a technique of suppressing the scattering of sublimates from a film on a substrate.

[0008] TECHNICAL MEANS FOR SOLVING THE PROBLEMS

[0009] A heat treatment apparatus of one embodiment of the present application performs heat treatment on a substrate on which a film of a resist is formed and the film has been subjected to an exposure process, and includes a heating plate capable of supporting and heating the substrate, a chamber that covers a processing space above the heating plate, a gas releasing portion that releases a processing gas toward the substrate on the heating plate from above within the chamber, a gas supply portion that supplies a gas into the chamber from a position below the surface of the substrate within the chamber, and an exhaust portion that exhausts the inside of the chamber via an exhaust hole provided above the processing space and having an opening toward the lower side.

[0010] EFFECTS OF THE INVENTION

[0011] According to the present application, a technique of suppressing the scattering of sublimates from a film on a substrate can be provided. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 FIG. 1 is a diagram illustrating the schematic structure of a substrate processing system of one illustrative embodiment.

[0013] Figure 2 FIG. 2 is a schematic view illustrating the internal structure of a substrate processing apparatus.

[0014] Figure 3 FIG. 3 is a flowchart showing one example of a substrate processing method.

[0015] Figure 4 FIG. 4 is a schematic view illustrating the structure of a heat treatment unit of the first embodiment.

[0016] Figure 5 is a schematic view illustrating a structure near a gas releasing portion of a heat treatment unit.

[0017] Figure 6 is a block diagram illustrating a hardware structure of a control device.

[0018] Figure 7 is a graph illustrating simulation results regarding movement of gas and sublimates in a heat treatment unit.

[0019] Figure 8 is a graph illustrating simulation results regarding movement of gas and sublimates in a heat treatment unit.

[0020] Figure 9 is a schematic view illustrating a structure of a heat treatment unit of the second embodiment.

[0021] Explanation of Reference Numerals

[0022] 1: substrate processing system, 2: coating and developing device, 20: heating mechanism, 21: heating plate, 21a: placement surface, 22: heating plate heater, 30: wafer lifting mechanism, 40: housing mechanism, 41: chamber, 42: lower chamber, 43: upper chamber, 44: support ring, 45: chamber driving portion, 50: gas releasing portion, 51: releasing hole, 60: gas supplying mechanism, 70: exhaust mechanism, 71: exhaust hole, 72: exhaust device, 81, 82: gas flow path. DETAILED DESCRIPTION

[0023] Hereinafter, various exemplary embodiments will be described.

[0024] A heat treatment device in one exemplary embodiment, which performs heat treatment on a substrate on which a resist film is formed and which has been subjected to an exposure process, includes a heating plate capable of supporting and heating the substrate, a chamber covering a processing space above the heating plate, a gas releasing portion which releases a processing gas toward the substrate on the heating plate from above within the chamber, a gas supplying portion which supplies a gas into the chamber from a position lower than a surface of the substrate, and an exhaust portion which exhausts the chamber via an exhaust hole provided above the processing space and having an opening toward the lower side.

[0025] According to the above-described heat treatment apparatus, the processing gas is released from the gas release portion toward the surface of the substrate, thereby facilitating the heat treatment of the substrate. On the other hand, the heat treatment apparatus has: a gas supply portion that supplies the gas into the chamber from a position lower than the surface of the substrate; and an exhaust portion that exhausts the inside of the chamber via an exhaust hole provided above the processing space and having an opening toward the lower side. Therefore, an updraft is formed around the substrate by the gas flowing therebetween. Therefore, the movement of the sublimates generated from the substrate at the time of heat treatment is blocked by the updraft. Thus, the scattering of the sublimates from the film on the substrate can be suppressed.

[0026] It can also be the case that the film is a film formed of a metal-containing resist.

[0027] In the case of using a metal-containing resist, since the sublimates from the film contain a metal component, the influence generated at the time of attachment of each portion in the apparatus can become large. However, by adopting the above-described structure, the scattering of the sublimates from the film on the substrate that contain a metal component can be suppressed, and thus the influence generated at the time of attachment of the sublimates to the apparatus can be effectively reduced.

[0028] It can also be the case that the exhaust hole is provided at a position inside the periphery of the gas release portion.

[0029] In the case where the exhaust hole is provided inside the periphery of the gas release portion, the gas that goes to the exhaust hole, the gas containing the sublimates from the film on the substrate, forms an updraft that goes to the inside of the periphery of the gas release portion. Thus, the scattering of the sublimates from the film on the substrate that go to the outside of the substrate can be suppressed.

[0030] It can also be the case that at least a portion of the exhaust hole is provided at a position outside the periphery of the substrate.

[0031] In the case where at least a portion of the exhaust hole is provided outside the periphery of the substrate, an updraft of the gas that goes to the exhaust hole is formed around the substrate, and the movement of the sublimates to the outside of the gas stream that goes to the exhaust hole can be suppressed. Thus, the scattering of the sublimates from the film on the substrate that go to the outside of the substrate can be suppressed.

[0032] It can also be the case that the gas supply portion supplies the gas into the chamber from a position outside the periphery of the substrate.

[0033] By supplying the gas into the chamber from a position outside the periphery of the substrate, an updraft of the gas stream that is further intensified can be formed around the substrate.

[0034] The gas supply portion can include a gas flow path connected to the chamber, and a flow path area control portion that controls the flow path area of the end portion of the chamber side of the gas flow path.

[0035] With the flow path area control portion, the flow path area of the end portion of the chamber side of the gas flow path can be controlled. With the structure that controls the flow path area, for example, the upward gas flow that can further suppress the scattering of sublimates can also be controlled. Furthermore, the upward gas flow can also be controlled in consideration of the quality of the resist pattern on the substrate.

[0036] The chamber can have an outer space above the flow path area control portion and radially outward of the exhaust portion, and a second gas supply portion connected to the outer space and different from the gas supply portion that supplies gas into the chamber can be provided.

[0037] With the outer space provided radially outward of the exhaust portion, and with the second gas supply portion connected to the outer space, the gas supplied from the second gas supply portion that moves in the outer space also moves toward the exhaust hole. Therefore, the turbulence of the upward gas flow in the chamber can be prevented, and the scattering of sublimates can be suppressed. Furthermore, the second gas supply portion is configured to be connected to the outer space on the flow path area control portion side. Therefore, the gas from the second gas supply portion can move toward the exhaust hole while moving upward like the upward gas flow, and thus the stagnation of the gas in the outer space and the like can be prevented.

[0038] The gas supply portion can have a gas flow path connected to the chamber, and the gas flow path can transmit heat from the heating plate.

[0039] With the above structure, the gas moving in the gas flow path is supplied into the chamber in a state heated by the heat from the heating plate, and thus the temperature variation and the like caused by the supply of the gas can be suppressed.

[0040] The gas release portion can include a plurality of release holes arranged in a scattered manner along the surface opposite to the substrate on the heating plate.

[0041] With the above structure, the process gas from the gas release portion can be more uniformly released to the surface of the substrate, and thus the quality of the resist pattern can be improved.

[0042] The heat treatment method of another example embodiment is a heat treatment method for a substrate on which a resist film is formed and the film is subjected to an exposure process, and the heat treatment is performed by supporting and heating the substrate on a hot plate, in which, in a chamber, a gas is supplied into the chamber from a position lower than a surface of the substrate, and the heat treatment is performed while an upward flow is formed around the substrate by exhausting the chamber through an exhaust port provided above the processing space and having an opening directed downward.

[0043] According to the heat treatment method described above, the gas is supplied into the chamber from a position lower than the surface of the substrate, and the chamber is exhausted through the exhaust port provided above the processing space and having the opening directed downward, whereby the heat treatment can be performed while the upward flow is formed around the substrate. Therefore, the movement of the sublimates generated from the substrate at the time of heat treatment is blocked by the upward flow. Thus, the scattering of the sublimates from the film on the substrate can be suppressed.

[0044] Hereinafter, various example embodiments will be described in detail with reference to the drawings. Note that the same or similar parts are denoted by the same reference numerals throughout the drawings.

[0045] <1st Embodiment>

[0046] [Substrate processing system]

[0047] Reference Figures 1-6 A substrate processing system of the 1st embodiment will be described. The substrate processing system 1 is a system for performing formation of a photosensitive film, exposure of the photosensitive film, and development of the photosensitive film on a substrate. The substrate to be processed is, for example, a wafer W of a semiconductor. The photosensitive film is, for example, a resist film. The substrate processing system 1 includes a coating and developing device 2 and an exposure device 3. The exposure device 3 is a device that exposes the resist film (photosensitive film) formed on the wafer W (substrate). Specifically, the exposure device 3 locally irradiates an energy ray to an exposure target of the resist film by a method such as immersion exposure. The coating and developing device 2 performs a process of forming the resist film by coating the resist (liquid medicine) on the surface of the wafer W (substrate) before the exposure process performed by the exposure device 3, and performs a development process of the resist film after the exposure process. In the example embodiments below, a case where the substrate processing system 1 forms a film of a metal-containing resist (hereinafter, referred to as "metal-containing resist") using a metal-containing resist will be described. For example, the substrate processing system 1 can also form the film using a tin (Sn)-containing resist. However, the type of the resist is not limited to the above type.

[0048] [Substrate processing device]

[0049] Next, as an example of the substrate processing apparatus, the structure of the coating and developing apparatus 2 will be described. As shown in FIG. 1, the coating and developing apparatus 2 includes a carrying block 4, a processing block 5, an interface block 6, and a control apparatus 100. Figure 1 and Figure 2 As shown in FIG. 1, the coating and developing apparatus 2 includes a carrying block 4, a processing block 5, an interface block 6, and a control apparatus 100.

[0050] The carrying block 4 performs the transfer of the wafer W into and out of the coating and developing apparatus 2. For example, the carrying block 4 is capable of supporting a plurality of carriers C for the wafer W, and is provided with a transfer device Al including a transfer arm. The carrier C accommodates a plurality of wafers W, for example, in a circular shape. The transfer device Al takes out the wafer W from the carrier C and transfers it to the processing block 5, and receives the wafer W from the processing block 5 and transfers it back into the carrier C. The processing block 5 has a plurality of processing modules 11, 12, 13, 14.

[0051] The processing module 11 is provided with a coating unit Ul, a heat treatment unit U2, and a transfer device A3 that transfers the wafer W to these units. The processing module 11 forms a lower layer film on the surface of the wafer W by the coating unit Ul and the heat treatment unit U2. The coating unit Ul applies a processing liquid for forming the lower layer film to the wafer W. The heat treatment unit U2 performs various heat treatments in conjunction with the formation of the lower layer film.

[0052] The processing module 12 performs film formation processing for forming a metal-containing resist film. The processing module 12 is provided with a coating unit U3, a heat treatment unit U4, and a transfer device A3 that transfers the wafer W to these units. The processing module 12 forms a metal-containing resist film on the lower layer film by the coating unit U3 and the heat treatment unit U4. The coating unit U3 applies a metal-containing resist to the lower layer film as a processing liquid for film formation. The heat treatment unit U4 performs various heat treatments in conjunction with the formation of the film. Thus, the metal-containing resist film is formed on the surface of the wafer W.

[0053] The processing module 13 is provided with a coating unit U5, a heat treatment unit U6, and a transfer device A3 that transfers the wafer W to these units. The processing module 13 forms an upper layer film on the resist film by the coating unit U5 and the heat treatment unit U6. The coating unit U5 applies a liquid for forming the upper layer film to the resist film. The heat treatment unit U6 performs various heat treatments in conjunction with the formation of the upper layer film.

[0054] The processing module 14 is provided with a developing unit U7 (developing processing unit), a heat processing unit U8, and a conveyance device A3 that conveys the wafer W to these units. The processing module 14 performs developing processing of the resist film subjected to the exposure processing and heat processing accompanying the developing processing by the developing unit U7 and the heat processing unit U8. Thereby, the resist pattern using the metal-containing resist is formed on the surface of the wafer W. Specifically, the heat processing unit U8 performs heating processing (PEB, Post Exposure Bake) before the developing processing. The developing unit U7 performs the developing processing of the wafer W subjected to the heating processing (PEB) by the heat processing unit U8. For example, the developing unit U7 performs the developing processing of the metal-containing resist film by applying a developing solution to the surface of the wafer W after the exposure and then washing the developing solution away with a washing solution. The heat processing unit U8 can also perform heating processing (PB, Post Bake) after the developing processing. Hereinafter, the heat processing by the heat processing unit U8 is described as "heating processing before the developing processing (PEB) " unless otherwise specified. Further, the metal-containing resist film is described as "resist film".

[0055] The rack unit U10 is provided on the side of the conveyance block 4 in the processing block 5. The rack unit U10 is divided into a plurality of unit areas arranged in the up-and-down direction. The conveyance device A7 including a lifting arm is provided in the vicinity of the rack unit U10. The conveyance device A7 lifts the wafer W between the unit areas of the rack unit U10.

[0056] The rack unit U11 is provided on the side of the interface block 6 in the processing block 5. The rack unit U11 is divided into a plurality of unit areas arranged in the up-and-down direction.

[0057] The interface block 6 performs the handover of the wafer W with the exposure device 3. For example, the interface block 6 is provided with the conveyance device A8 including a handover arm, which is connected to the exposure device 3. The conveyance device A8 hands over the wafer W disposed in the rack unit U11 to the exposure device 3. The conveyance device A8 receives the wafer W from the exposure device 3 and returns it to the rack unit U11.

[0058] Figure 3 An example of a substrate processing sequence including the application and developing processing is shown. The control device 100 controls the application and developing device 2, for example, in such a manner that the application and developing processing is performed in the following order. First, the control device 100 controls the conveyance device Al to convey the wafer W in the carrier C to the rack unit U10 and controls the conveyance device A7 to dispose the wafer W in the unit area for the processing module 11.

[0059] Next, the control device 100 controls the conveyance device A3 to convey the wafer W of the shelf unit U10 to the coating unit U1 and the heat treatment unit U2 in the processing module 11. Further, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form a lower layer film on the surface of the wafer W (step S01). Thereafter, the control device 100 controls the conveyance device A3 to return the wafer W on which the lower layer film is formed to the shelf unit U10, and controls the conveyance device A7 to arrange the wafer W in the unit area for the processing module 12.

[0060] Next, the control device 100 controls the conveyance device A3 to convey the wafer W of the shelf unit U10 to the coating unit U3 and the heat treatment unit U4 in the processing module 12. Further, the control device 100 controls the coating unit U3 and the heat treatment unit U4 to form a metal-containing resist film on the lower layer film of the wafer W (step S02). Thereafter, the control device 100 controls the conveyance device A3 to return the wafer W to the shelf unit U10, and controls the conveyance device A7 to arrange the wafer W in the unit area for the processing module 13.

[0061] Next, the control device 100 controls the conveyance device A3 to convey the wafer W of the shelf unit U10 to each unit in the processing module 13. Further, the control device 100 controls the coating unit U5 and the heat treatment unit U6 to form an upper layer film on the metal-containing resist film of the wafer W (step S03). Thereafter, the control device 100 controls the conveyance device A3 to convey the wafer W to the shelf unit U11.

[0062] Next, the control device 100 controls the conveyance device A8 to deliver the wafer W housed in the shelf unit U11 to the exposure device 3. Then, in the exposure device 3, exposure processing is performed on the metal-containing resist film formed on the wafer W (step S04). Thereafter, the control device 100 controls the conveyance device A8 to receive the wafer W on which the exposure processing is performed from the exposure device 3, and arranges the wafer W in the unit area for the processing module 14 of the shelf unit U11.

[0063] Next, the control device 100 controls the conveyance device A3 to convey the wafer W of the shelf unit U11 to the heat treatment unit U8 in the processing module 14. Then, the control device 100 controls the heat treatment unit U8 to perform a pre-development heat treatment on the metal-containing resist film of the wafer W (step S05). Next, the control device 100 controls the development unit U7 and the heat treatment unit U8 to perform a development processing and a post-development heat treatment on the metal-containing resist film of the wafer W on which the heat treatment is performed by the heat treatment unit U8 (steps S06, S07). Thereafter, the control device 100 controls the conveyance device A3 to return the wafer W to the shelf unit U10, and controls the conveyance device A7 and the conveyance device Al to return the wafer W to the carrier C. Thus, the substrate processing including the coating and development processing is completed.

[0064] In addition, the configuration of the substrate processing apparatus is not limited to the configuration of the coating and developing apparatus 2 exemplified above. The substrate processing apparatus can be of any form as long as it has a film forming unit that performs film forming processing of forming a film of a metal-containing resist, a heat treatment unit that performs heat treatment of the film after exposure processing, a developing unit that performs developing processing of the film, and a control device that controls these units.

[0065] (Heat treatment unit)

[0066] Next, one example of the heat treatment unit U8 of the processing module 14 will be described in detail with reference to Figure 4 and Figure 5 As shown in Figure 4 , the heat treatment unit U8 includes a heating mechanism 20, a wafer lifting mechanism 30 (lifting section), a housing mechanism 40, a gas supply mechanism 60 (gas supply section), and an exhaust mechanism 70 (exhaust section). In Figure 4 , the hatching indicating a cross section is omitted except for some elements.

[0067] The heating mechanism 20 heats the wafer W. The heating mechanism 20 includes a heating plate 21. The heating plate 21 includes a heating plate heater 22. The heating plate 21 supports the wafer W that is a subject of heat treatment and heats the wafer W supported thereby. The heating plate 21 is formed in a substantially circular plate shape as one example. The diameter of the heating plate 21 can be larger than the diameter of the wafer W. The heating plate 21 has a placement surface 21a. The heating plate 21 supports the wafer W by placing the wafer W at a prescribed position of the placement surface 21a. The heating plate 21 can be composed of a metal such as aluminum, silver, or copper, which has a high thermal conductivity.

[0068] The heating plate heater 22 raises the temperature of the heating plate 21. The heating plate heater 22 can be provided inside the heating plate 21 or on the heating plate 21. The heating plate heater 22 can be composed of an electric resistance heating element. The heating plate heater 22 generates heat by flowing a current therethrough. Moreover, the heat from the heating plate heater 22 is transferred to raise the temperature of the heating plate 21. In the heating plate heater 22, a current having a value corresponding to an instruction from the control device 100 can be flowed, or a voltage having a value corresponding to the instruction from the control device 100 can be applied to flow a current corresponding to the voltage value.

[0069] The wafer lifting mechanism 30 is configured to raise and lower the wafer W on the heating plate 21. Specifically, the wafer lifting mechanism 30 raises and lowers the wafer W between a processing height at which the wafer W is placed on the placement surface 21a of the heating plate 21 and a handover height at which the wafer W is handed over above the heating plate 21. The wafer lifting mechanism 30 includes a plurality of (for example, three) support pins 31 and a lifting drive section 32.

[0070] The support pin 31 is a pin that supports the wafer W from below. The support pin 31 can also extend in the up-down direction in a manner that penetrates the heating plate 21, for example. A plurality of support pins 31 can also be arranged at equal intervals with respect to each other in the circumferential direction around the center of the heating plate 21. The support pin 31 is raised and lowered by a lifting drive section 32 in accordance with an instruction from the control device 100. The lifting drive section 32 is a lifting actuator, for example.

[0071] The housing mechanism 40 is configured in a manner that houses the wafer W that is the object of heat treatment. The housing mechanism 40 includes a chamber 41 and a chamber drive section 45. The chamber 41 is configured in a manner that forms a processing space S in which heat treatment is performed. In other words, the chamber 41 covers the processing space S on the heating plate 21. The chamber 41 has a lower chamber 42, an upper chamber 43, and a support ring 44 provided between the lower chamber 42 and the upper chamber 43.

[0072] The lower chamber 42 is provided around the heating plate 21. The lower chamber 42 can also be formed in a cylindrical shape in a manner that surrounds the peripheral portion of the heating plate 21. A space that communicates with the processing space S inside can also be formed between the lower chamber 42 and the heating plate 21. This space functions as a gas flow path 81 that connects the inside and outside of the processing space S. The gas flow path 81 can also be formed in a ring shape. Furthermore, a plurality of through holes can also be formed in the lower chamber 42 in a manner that a plurality of gas flow paths 81 are arranged in a ring shape between the lower chamber 42 and the heating plate 21, on the basis of a structure in which the heating plate 21 is held by the lower chamber 42. The lower chamber 42 can also be fixed at a prescribed position of the heat treatment unit U8.

[0073] In the case where the gas flow path 81 is configured as illustrated in FIG. 2, a structure in which the heat of the heating plate 21 can be transmitted to the gas flow path 81 can be provided. In the case where such a structure is employed, the gas inside the gas flow path 81 can be heated by the heat of the heating plate 21. Figure 4

[0074] The support ring 44 can also be a flat plate-shaped and ring-shaped member that is mounted to the upper end 42a of the lower chamber 42. The outer circumferential side end portion 44a of the support ring 44 is fixed with respect to the upper end 42a of the lower chamber 42, and the inner circumferential side protrudes toward the central side of the processing space S, and the inner circumferential side end portion 44b is in a position that overlaps the heating plate 21 when viewed from above. Furthermore, the inner circumferential side end portion 44b of the support ring 44 is in a position that does not overlap the wafer W on the heating plate 21 when viewed from above. The lower surface 44c of the support ring 44 is separated from the placement surface 21a of the heating plate 21, and this space becomes a portion of the gas flow path 81 that communicates with the processing space S. The above-described gas flow path 81 and the support ring 44 function as a gas supply section that supplies gas into the chamber 41 from a position that is lower than the surface of the wafer W.

[0075] ​The upper chamber 43 is a cover that forms the processing space S in the chamber 41 together with the lower chamber 42. The processing space S is formed in the chamber 41 by bringing the upper chamber 43 into abutment with the lower chamber 42. The upper chamber 43 can also have a top plate 43a and a side wall 43b.

[0076] The top plate 43a is a circular plate having the same diameter as the lower chamber 42 and the support ring 44. The top plate 43a is disposed so as to be opposed to the placement surface 21a of the heating plate 21 in the vertical direction. That is, the top plate 43a covers the placement surface 21a of the heating plate 21. The lower surface of the top plate 43a constitutes the upper surface of the processing space S. The side wall 43b constitutes a portion that extends downward from the outer edge of the top plate 43a. The side wall 43b surrounds the placement surface 21a of the heating plate 21. The inner face of the side wall 43b constitutes the peripheral surface of the processing space S.

[0077] The chamber drive section 45 raises and lowers the upper chamber 43. For example, the chamber drive section 45 is a raising and lowering actuator. The chamber 41 becomes the open state by raising the upper chamber 43 with the chamber drive section 45. The chamber 41 becomes the closed state by lowering the upper chamber 43 with the chamber drive section 45 so as to be in abutment with the support ring 44 on the lower chamber 42. The processing space S is formed inside the chamber 41 when the chamber 41 is in the closed state. Further, the space above the heating plate 21 is connected to the space outside the chamber 41 when the chamber 41 is in the open state. However, even in the state where the processing space S is formed by the chamber 41 being in the closed state, a small space can be formed between the upper chamber 43 and the support ring 44. This space can become the gas flow path 82. Further, even in the state where the processing space S is formed by the chamber 41 being in the closed state, the processing space S is connected to the space outside by the gas flow path 81 formed by the heating plate 21, the lower chamber 42, and the support ring 44. However, the flow path that communicates the inside and outside of the processing space S is limited compared to the open state, and thus the amount of gas that can move is limited.

[0078] The upper chamber 43 contains a gas release section 50. The gas release section 50 releases gas from the wafer W on the heating plate 21 in the chamber 41 in the upward direction. The gas release section 50 releases gas containing moisture toward the wafer W on the heating plate 21. The gas release section 50 can also release gas other than moisture-containing gas. For example, the gas release section 50 can also release an inert gas toward the wafer W on the heating plate 21. The gas release section 50 is provided in the top plate 43a. The gas release section 50 has a buffer space provided on the lower side in the top plate 43a and a plurality of gas release sections 50 that pass through the buffer space and the processing space S in the lower surface of the top plate 43a.

[0079] A plurality of release holes 51 are disposed in the portion (opposing face 50a) of the lower surface of the top plate 43a that opposes the wafer W on the heating plate 21 at a substantially uniform density. For example, as shown in FIG. 4, the release holes 51 are disposed in the opposing face 50a of the top plate 43a in a grid pattern.Figure 5 As shown in FIG. 1, a plurality of release holes 51 are arranged in a region of the opposing surface 50a that opposes the wafer W on the heating plate 21 (hereinafter, referred to as a "unit region"). The unit region refers to a region of the opposing surface 50a that overlaps the wafer W on the heating plate 21 as viewed in the upward and downward directions. The plurality of release holes 51 can also be arranged (scattered) so that, in the case where the moisture-containing gas is released from the gas release portion 50, the moisture amount (humidity) is substantially uniform over the entire upper surface of the wafer W in the space of the upper surface of the wafer W. The plurality of release holes 51 can also be arranged so as to be uniformly distributed in the unit region. The hole density refers to the proportion of the opening area of the release hole 51 per unit area in the unit region. In addition, the region in which the release hole 51 is provided is formed so as not to include the outer side of the unit region described above. That is, the release hole 51 is provided only in the region that overlaps the wafer W as viewed in the plan view, and is not provided on the outer side thereof.

[0080] The opening areas of the plurality of release holes 51 can also be substantially the same as one another. The shape of the release hole 51 as viewed in the upward and downward directions can also be circular. The spacing between the release holes 51 can be uniform in the lateral direction, or the spacing between the release holes 51 can be uniform in the vertical direction. The spacing between the release holes 51 can also be uniform in both the lateral and vertical directions.

[0081] Returning to Figure 4 The gas supply mechanism 60 is configured to be capable of supplying a process gas that is a gas used for the heat treatment of the wafer W to the gas release portion 50. The gas supply mechanism 60 can also supply a moisture-containing gas or an inert gas to the gas release portion 50. For example, the gas supply mechanism 60 includes a gas supply path 61 and a gas supply source 62. In addition, a plurality of gas supply sources can also be provided depending on the type of gas to be supplied, or the like. Furthermore, a gas switching portion or the like can also be provided as necessary.

[0082] The gas supply path 61 is a flow path for supplying a gas to the gas release portion 50. One end of the gas supply path 61 is connected to the gas release portion 50. The other end of the gas supply path 61 is connected to the gas supply source 62. Furthermore, a gate valve or the like for controlling the amount of gas supplied to the gas release portion 50 can also be provided on the gas supply path 61. The gate valve can also be configured to be capable of switching between opening and closing based on an instruction from the control device 100.

[0083] The gas supply source 62 supplies a gas to the gas release portion 50 via the gas supply path 61. The gas supply source 62 can also supply, for example, a moisture-containing gas whose moisture concentration is adjusted to the gas release portion 50. Further, the gas supply source 62 can also supply an inert gas to the gas release portion 50. The inert gas refers to a gas that is less likely to react with metal sublimates generated from the coating film when the wafer W is heated. As the inert gas, the gas supply source 62 can supply a gas having a lower oxygen concentration than the moisture-containing gas, or a gas having a low humidity. For example, the gas supply source 65 can supply nitrogen (N2) gas as a gas having a low oxygen concentration, or dry air as a gas having a low humidity.

[0084] The exhaust mechanism 70 (exhaust portion) is configured to be able to exhaust a gas in the chamber 41 to the outside of the chamber 41. The exhaust mechanism 70 exhausts the gas in the chamber to the outside of the chamber 41 from the outer periphery of the processing space S via the exhaust holes provided outside the gas release portion 50. The exhaust mechanism 70 includes a plurality of exhaust holes 71 and an exhaust device 72. As Figure 5 As illustrated in the example, the plurality of exhaust holes 71 are provided in the outer peripheral portion of the opposite surface 50a corresponding to the wafer W of the gas release portion 50. The plurality of exhaust holes 71 are provided in the top plate 43a of the upper chamber 43, and each have an opening in the outer peripheral portion of the inner surface of the top plate 43a (i.e., the outer peripheral portion of the upper surface of the processing space S). The shape of the exhaust holes 71 in the top plate 43a is not particularly limited. The exhaust device 72 exhausts the gas in the processing space S to the outside of the chamber 41 via the plurality of exhaust holes 71. The exhaust device 72 is, for example, an exhaust pump. In addition, the exhaust holes 71 can be formed in a ring shape outside the gas release portion 50. In addition, the exhaust holes 71 can be configured such that at least a part of the exhaust holes 71 is provided outside the outer periphery of the wafer W when viewed from above. That is, the exhaust holes 71 can be provided at a position where a part thereof overlaps the wafer W when viewed from above.

[0085] In the processing space S, the end portion 81a (the end portion on the processing space S side) of the gas flow path 81 is provided on the outer peripheral side of the periphery of the wafer W. This end portion 81a is provided outside the outer periphery of the wafer W (radially outside the wafer W). Further, the position of the end portion 81a can be set to be on the lower side than the upper surface of the wafer W. The position of the end portion 81a of the gas flow path 81 can be controlled by the position or shape of the inner peripheral side end portion 44b of the support ring 44. That is, the support ring 44 also functions as a flow regulating portion that regulates the movement path of the gas moving in the gas flow path 81, and controls the flow path area.

[0086] Furthermore, above the support ring 44 protruding centrally within the processing space S, an outer space S1 is formed between it and the top plate 43a of the upper chamber 43, forming a gap that is continuous with the gap that can serve as a gas flow path 82. The outer space S1 is located on the radially outer periphery of the heat treatment unit U8, closer to the exhaust port 71 of the exhaust mechanism 70. Moreover, the cross-sectional area of ​​the outer space S1 is larger in the vertical direction compared to the gas flow path 82. Therefore, the gas introduced into the outer space S1 from the gas flow path 82 experiences a lower flow velocity within the outer space S1. The gas flow path 82 functions as a second gas supply unit for supplying gas to the outer space S1 within the processing space S.

[0087] Furthermore, the type of gas supplied from gas flow path 81 and gas flow path 82 is not particularly limited; for example, it can be atmospheric gas. Additionally, the structure can connect gas flow path 81 and gas flow path 82 to a gas supply source in a manner that supplies processing gas.

[0088] (Control device)

[0089] like Figure 1 As shown, the control device 100 functionally includes a storage unit 101 and a control unit 102. The storage unit 101 stores programs for operating each part of the coating and developing apparatus 2, including the heat treatment unit U8. The storage unit 101 also stores various data (e.g., information related to indication signals for operating the heat treatment unit U8), information from sensors installed in each part, etc. The storage unit 101 can be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a photomagnetic recording disk. The program can also be contained in an external storage device different from the storage unit 101, or intangible media such as signal transmission media. The program can also be installed into the storage unit 101 from these other media, thereby storing the program in the storage unit 101. The control unit 102 controls the operation of each part of the coating and developing apparatus 2 based on the program read from the storage unit 101.

[0090] The control device 100 comprises one or more control computers. For example, the control device 100 has... Figure 6The circuit 120 is shown. The circuit 120 has one or more processors 121, a memory 122, a storage device 123, a timer 124, and an input / output port 125. The storage device 123 has a storage medium such as a hard disk that is readable by a computer. The storage medium stores a program for causing the control device 100 to execute the substrate processing procedure described later. The storage medium can also be a removable medium such as a nonvolatile semiconductor memory, a magnetic disk, and an optical disk. The memory 122 temporarily stores the program loaded from the storage medium of the storage device 123 and the operation result of the processor 121. The processor 121 cooperates with the memory 122 to execute the above program, thereby constituting the above functional modules. The timer 124 measures elapsed time by counting a reference pulse of a certain period. The input / output port 125 performs input and output of electric signals between the heat treatment unit U8 according to the instruction from the processor 121.

[0091] In addition, the hardware structure of the control device 100 is not necessarily limited to the configuration of the functional modules by the program. For example, the functional modules of the control device 100 can also be constituted by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) that integrates the logic circuit.

[0092] [Operation of the heat treatment unit]

[0093] Returning to Figure 4 , the operation at the time of heat treatment of the heat treatment unit U8 will be described. At the time of heat treatment, the control section 102 of the control device 100 first causes the upper chamber 43 to rise by driving the chamber drive section 45. Thereby, the space inside the chamber 41 is connected to the space outside the chamber 41. Next, the control section 102 of the control device 100 controls the transport device A3 and the wafer lift mechanism 30 to transport the wafer W into the chamber 41. For example, in a state where the wafer lift control section 112 drives the lift drive section 32 to raise the support pin 31, the control device 100 controls the transport device A3 to arrange the wafer W on the support pin 31.

[0094] Next, the control section 102 of the control device 100 causes the upper chamber 43 to descend by driving the chamber drive section 45. By the control of the control section 102, the wafer lift control section 112 causes the support pin 31 to descend by driving the lift drive section 32, and causes the wafer W supported on the support pin 31 to be placed on the heating plate 21. In this way, the processing space S is formed inside the chamber 41, and the wafer W as the processing target is placed on the placement surface 21a, and the heat treatment of the wafer W as the processing target is started.

[0095] During the heat treatment of the wafer W, the control section 102 of the control device 100 causes the gas supply mechanism 60 and the exhaust mechanism 70 to operate, and controls the flow of gas in the processing space S. Specifically, by the control of the control device 100, gas is supplied from the gas supply mechanism 60 to the processing space S through the gas release section 50 at a prescribed flow rate LI. Further, by the control of the control device 100, gas in the processing space S is exhausted from the exhaust hole 71 to the outside of the processing space S at a prescribed flow rate L2 by the exhaust mechanism 70. At this time, in the heat treatment unit U8, the gas supply amount of the gas supply mechanism 60 and the gas exhaust amount of the exhaust mechanism 70 are controlled so that LI < L2. Therefore, gas corresponding to the difference (L2 - LI) is supplied from the gas flow path 81 and the gas flow path 82 to the processing space S. Since the gas flow path 81 and the gas flow path 82 are connected to the outside of the processing space S, the gas of the prescribed amount (L2 - LI) is supplied from the outside. In addition, the gas flow path 82 is in a closed state (closed by the abutment of the upper chamber 43 and the support ring 44), or is in a state where the flow path cross-sectional area is very small compared to the gas flow path 81. Therefore, the amount of gas supplied to the processing space S through the gas flow path 81 becomes very large compared to the amount of gas supplied to the processing space S through the gas flow path 82. Further, the control is performed so that the flow rate L3 of the gas supplied from the gas flow path 81 is larger than the flow rate LI of the gas supplied from the gas release section 50, that is, the relationship L3 > LI is satisfied.

[0096] As described above, in the processing space S, gas is supplied from the gas release section 50 to the surface of the wafer W at a flow rate LI substantially uniformly. On the other hand, since the flow rate L2 of the gas exhausted from the exhaust hole 71 is larger than the flow rate LI, gas corresponding to the difference is supplied from the outside to the processing space S through the gas flow path 81 (and the gas flow path 82). The gas supplied to the surface of the wafer W from the gas release section 50 and the gas supplied from the outside through the gas flow path 81 (and the gas flow path 82) are both exhausted to the outside from the exhaust hole 71 by the exhaust mechanism 70. Therefore, on the surface of the wafer W, the gas moves in the radial direction from the center of the wafer W to the outer periphery. Further, in the periphery of the wafer W, the gas supplied to the processing space S from the gas flow path 81 moves to the exhaust hole 71, and thus an upward gas flow is formed. The gas moving in the radial direction along the wafer W also moves upward in a form included in the above-described upward gas flow, and is exhausted from the exhaust hole 71. In addition, the "upward gas flow" refers to the flow of gas going upward.

[0097] Here, in the case where the film formed on the surface of the wafer W processed in the heat treatment unit U8 is a metal-containing resist film, sublimates containing a metal component are generated from the surface of the wafer W in the heat treatment. The sublimates have a tendency to easily adhere to peripheral members (for example, the chamber 41) that are at a lower temperature than the heater plate 21. Further, the sublimates can cause contamination of the apparatus when adhering to the wall surface, the bottom surface, the top surface, or the like of the heat treatment unit U8 because they contain a metal component. Further, the possibility of a decrease in performance of the apparatus due to the adhesion of the sublimates is also considered. In addition, the sublimates can move together with the gas in the vicinity of the surface of the wafer W. Therefore, in order to suppress the scattering of the sublimates in the processing space S, it is required to control the movement of the gas that can contain the sublimates on the surface of the wafer W so as not to be dispersed in the processing space S.

[0098] On the other hand, the distribution of the gas in the vicinity of the surface of the wafer W has an influence on the quality of the resist pattern on the wafer W, particularly the uniformity of the line width (CD). The size of the resist pattern using a metal-containing resist is affected by the amount of moisture in the chamber 41 in the heat treatment. When a deviation occurs in the distribution of the amount of moisture on one wafer W, the amount of moisture that reacts in the film (reactive moisture amount) also deviates. Therefore, it is required that the gas supplied to the gas release portion 50 on the surface of the wafer W becomes uniform, and the difference in the reactive moisture amount between the central region and the outer peripheral region of the wafer W in the heat treatment becomes small. The uniformity of the line width of the resist pattern on the surface of the wafer W is also related to the quality of the semiconductor product or the like obtained from the wafer W. Therefore, it is required to control the movement of the gas on the wafer W so as to improve the uniformity of the line width of the resist pattern.

[0099] With respect to the above aspect, in the heat treatment unit U8, an exhaust hole 71 is provided at the outer periphery of the wafer W, and a gas flow path 81 is provided at the outer periphery of the wafer W in addition to the gas release portion 50 that supplies the gas to the surface of the wafer W. Thereby, an upward gas flow that goes from the vicinity of the outer peripheral end of the wafer W to the exhaust hole 71 is formed. At this time, the gas that can contain the sublimates that move along the surface of the wafer W supplied from the gas release portion 50 to the surface of the wafer W also moves to the exhaust hole 71 together with the upward gas flow. Therefore, it is possible to prevent the sublimates from adhering to the peripheral members or the like on the outer peripheral side of the upward gas flow. In addition, in the case where the exhaust hole 71 has a structure that includes a region disposed in a position close to the wafer W and on the outer side of the wafer W periphery when viewed from above, it is possible to further suppress the scattering of the sublimates. Even in the case where the exhaust hole 71 is provided at the outer periphery of the wafer W when viewed from above, when the exhaust hole 71 is in a position close to the side wall of the chamber (the side wall 43b of the upper chamber 43), the upward gas flow is formed in the vicinity of the side wall of the chamber. In such a case, it is considered that the possibility of the scattering of the sublimates increases. That is, by providing the exhaust hole 71 in a position close to the wafer W when viewed from above, it is possible to further suppress the scattering of the sublimates.

[0100] Furthermore, it is believed that when the rising airflow around the outer periphery of the wafer W flows in a relatively regular manner, the gas on the surface of the wafer W can easily flow smoothly towards the exhaust port 71 near the outer periphery of the wafer W. Therefore, it is considered to increase the flow velocity of the gas at the end 81a of the gas flow path 81 to a certain extent, thereby increasing the flow velocity of the rising airflow when the gas from the gas flow path 81 is introduced into the processing space S. In the heat treatment unit U8, in order to achieve the above state, the support ring 44 functions as a rectifier.

[0101] Reference Figure 7 and Figure 8 The shape of the end 81a of the gas flow path 81 formed based on the configuration of the support ring 44 and the state of movement of gas and sublimation in the processing space S are explained.

[0102] Figure 7 Figure (a) is a graph showing the simulation results of gas movement outside the wafer W within the processing space S. Furthermore, Figure 7 (b) in the figure is a graph showing the simulation results of the movement of sublimation from wafer W. Furthermore, Figure 7 (c) in the middle is to Figure 7 (b) is an enlarged view of the outer side of the wafer W. Additionally, in Figure 7 In (b), the position corresponding to the center of the wafer W represents the center line X.

[0103] like Figure 7 As shown in (a), on the outer side of the wafer W, an upward airflow F1 is formed where the gas supplied from the gas flow path 81 changes direction near the end 81a of the gas flow path 81 and moves upward. This upward airflow F1 is formed due to the large exhaust volume from the exhaust port 71. On the other hand, gas moving radially outward along the surface of the wafer W merges with the upward airflow F1 and moves upward. Furthermore, when the gas flow path 82 is open (where gas supply from the gas flow path 82 may occur), as... Figure 7 As shown in (a), the gas supplied from the gas flow path 82 moves in the outer space S1 and reaches the exhaust port 71. Therefore, when gas is introduced from the gas flow path 82, the gas flowing in the outer space S1 forms an airflow that does not obstruct the rising airflow F1 and moves toward the exhaust port 71.

[0104] In addition, although Figure 7 As shown in (b), sublimation from the surface of wafer W is scattered above wafer W, but especially as... Figure 7As shown in (c), the scattering of sublimation towards the outer periphery of the wafer W is suppressed. Thus, within the processing space S, by forming an upward airflow F1, the movement of gas moving above the wafer W to the outer side of the upward airflow F1 is suppressed, thereby suppressing the scattering of sublimation to the outer side.

[0105] exist Figure 8 In the middle, it indicates that the inner circumferential end 44b of the support ring 44 is connected to... Figure 7 The simulation results shown are for a state closer to the W side of the wafer. Figure 8 (a) in the text indicates that it is related to... Figure 7 The graph corresponding to simulation results in (a) is shown. Figure 8 (b) in the text indicates that it is related to... Figure 7 The graph shows the simulation results corresponding to (c) in the figure.

[0106] according to Figure 8 As can be seen from (a) in the text, with Figure 7 Similarly, in (a) of the above, on the outer side of the wafer W, the gas supplied from the gas flow path 81 changes its direction of travel near the end 81a of the gas flow path 81, forming an upward-moving rising airflow F2. However, with Figure 7 Compared to the example shown in (a), the upward airflow F2 bends near the outer periphery of the wafer W, with a greater curvature. This is believed to be because the end 81a of the gas flow path 81 is... Figure 7 In the example shown in (a), the gas path changes drastically due to its closer proximity to the wafer W and its position relative to the vent 71. Furthermore, because the end 81a is closer to the wafer W, as... Figure 8 As shown in (b), the width W2 of the flow path formed by the side of the wafer W and the support ring 44 becomes smaller than Figure 7 The width W1 is shown in (c) in the diagram. The result is considered to be that... Figure 8 In the example shown in (b), with Figure 7 Compared to the example shown in (c), a narrower updraft F2 is formed where gas diffusion is suppressed as the gas moves through the region. The widths W1 and W2 correspond to the flow path area at that location.

[0107] The result of this upward airflow F2 forming near the end of the wafer W is that, Figure 8 In the example shown, the dispersion of sublimation near the surface of wafer W is further suppressed. This is possible from Figure 8 (b) and Figure 7 This can be confirmed by comparing (c) in the text. Furthermore, in... Figure 8 In the example shown in (b), it was confirmed that, with Figure 7Comparing (c) in FIG. 6 with (c) in FIG. 5, sublimates moving downward along the outer peripheral wall of the wafer W from the end edge of the wafer W are reduced. Thus, by forming a somewhat stronger upward gas flow F2 near the end portion of the wafer W, dropping of sublimates from the end edge of the wafer W and the like can also be prevented.

[0108] Thus, by supplying gas from the gas flow path 81 to form an upward gas flow to what extent, it is possible to change the effect of suppressing scattering of sublimates caused by the upward gas flow.

[0109] On the other hand, as described above, the distribution of gas on the surface of the wafer W affects the quality of the resist pattern on the wafer W. Therefore, it is required to control the movement of gas on the wafer W so that the uniformity of the line width of the resist pattern does not decrease due to deviation in the flow of gas on the surface of the wafer W. In this regard, by using the gas release portion 50 having a plurality of release holes 51 arranged in a scattered manner along the surface opposite the wafer W on the heater plate 21, it is possible to reduce unevenness related to the supply of gas to the surface of the wafer W. However, if the flow rate of gas to the exhaust hole 71 is too large, there is a possibility that the movement of gas supplied to the wafer W will be too fast to affect the quality of the resist pattern. Therefore, it is possible to adopt a manner of controlling the movement of gas on the wafer W within a range that maintains the uniformity of the line width of the resist pattern.

[0110] Further, the ratio of the amount of gas supplied from the gas release portion 50 to the amount of gas introduced from the gas flow path 81 and the gas flow path 82 (sum of the amounts introduced from the two flow paths) can be, for example, in the range of 1:6 to 1:2. Further, the proportion of the amount of gas introduced from the gas flow path 82 with respect to the amount of gas introduced from the gas flow path 81 and the gas flow path 82 (sum of the amounts introduced from the two flow paths) can be, for example, 30% or less. By controlling the movement of gas from each portion in a manner that becomes the above-described range, it is possible to improve the uniformity of the line width of the resist pattern of the wafer W while suppressing scattering of sublimates by forming an upward gas flow.

[0111] [Effects]

[0112] As described above, according to the above-described heat treatment apparatus (heat treatment unit U8) and heat treatment method, by releasing a process gas from the gas release portion 50 to the surface of the wafer W, it is possible to promote heat treatment of the wafer W. On the other hand, in the heat treatment unit U8, by the gas flow path 81 and the exhaust mechanism 70 that exhausts the inside of the chamber from the exhaust hole 71, an upward gas flow is formed around the substrate by the gas flowing therebetween. Therefore, the movement of sublimates generated from the wafer W at the time of heat treatment is blocked by the upward gas flow. Thus, it is possible to suppress scattering of sublimates from the coating film on the substrate.

[0113] Further, as explained above, in the case of using a metal-containing resist, since the sublimates from the coating film contain metal components, the influence of the attachment to each part in the apparatus can become large. In such a case, by adopting the above-described structure, the scattering of the sublimates from the coating film on the wafer that contain metal components can be suppressed. Therefore, the influence of the attachment of the sublimates to the apparatus can be effectively reduced.

[0114] Further, by supplying the gas into the chamber from a position further outward than the wafer W as explained above, the rising gas flow whose gas flow is further intensified can be formed around the wafer W.

[0115] In the case where the gas supply part includes the gas flow path 81 connected to the chamber and the support ring 44 that is a flow regulating part that controls the flow path area at the end 81a of the chamber 41 side of the gas flow path 81, the flow path area can be controlled by them. Therefore, for example, the rising gas flow that can further suppress the scattering of the sublimates can also be controlled. Further, the rising gas flow can also be controlled in consideration of the quality of the resist pattern on the wafer W.

[0116] Further, it can be configured as follows: as explained above, an outer space S1 is provided on the radial direction outside of the exhaust hole 71 of the exhaust mechanism 70 that is an exhaust part, and the gas is also supplied from the gas flow path 82 that is a second gas supply part connected to the outer space S1. In this case, the gas supplied from the gas flow path 82 that moves in the outer space S1 also moves toward the exhaust hole 71, so the disturbance of the rising gas flow can be prevented, and the scattering of the sublimates can be suppressed. At this time, when the gas flow path 82 is connected to the outer space S1 on the support ring 44 side, i.e., the lower side, the stagnation of the gas in the outer space and its vicinity can be prevented.

[0117] Further, as explained above, in the case where the gas flow path 81 can transfer heat from the heat plate 21, the gas moving in the gas flow path 81 can be supplied into the chamber in a state heated by the heat from the heat plate. Therefore, the temperature variation in the chamber 41 and the like caused by the supply of the gas from the gas flow path 81 can be suppressed.

[0118] Further, in the case where the gas release part 50 includes a plurality of release holes 51 arranged to be spread along the surface opposite to the wafer W on the heat plate 21, the process gas can be more uniformly released to the surface of the wafer W, so the quality of the resist pattern can be improved.

[0119] <2nd Embodiment>

[0120] Next, the heat treatment apparatus (heat treatment unit U8A) of the 2nd embodiment will be explained. Figure 9 is a view showing one example of the heat treatment unit U8A of the 2nd embodiment. As explained above, the heat treatment unit U8A of the 2nd embodiment is different from the heat treatment unit U8 of the 1st embodiment in that the gas supply part 40 is configured as follows:Figure 9 As shown, the heat treatment unit U8A includes a heating mechanism 20, a wafer lifting mechanism 30 (lifting section), a housing mechanism 40, a gas supply mechanism 60 (gas supply section), and an exhaust mechanism 70 (exhaust section). This is the same as the heat treatment unit U8 in the first embodiment. Furthermore, the structures of the gas flow paths 81 and 82 are also the same as those in the heat treatment unit U8. The difference between the heat treatment unit U8A and the heat treatment unit U8 lies in the arrangement of the exhaust mechanism 70.

[0121] In the heat treatment unit U8A, the exhaust port 71 of the exhaust mechanism 70 (exhaust section) is located inside the periphery of the gas release section 50 opposite to the wafer W. Figure 9 In the example shown, the vent 71 is located near the center of the opposite surface 50a. Figure 9 The text indicates that there are multiple (2) vent holes 71, but the vent hole 71 can also be a structure with one vent hole in the center. When multiple vent holes 71 are provided, a release hole 51 can also be provided on the central side of the vent holes 71. In this case, the release hole 51 can also be provided with the same size and distribution density as the release holes on the outer part of the vent holes 71. Furthermore, in... Figure 9 In the example shown, although the exhaust port 71 and the gas supply path 61 of the gas supply mechanism 60 have a dual structure, the structure of this part is not particularly limited.

[0122] In the heat treatment unit U8A, the airflow control performed by the control unit 102 of the control device 100 is the same as that in the heat treatment unit U8. That is, during the heat treatment of the wafer W, the control unit 102 activates the gas supply mechanism 60 and the exhaust mechanism 70, supplying gas from the gas supply mechanism 60 to the processing space S via the gas release unit 50 at a predetermined flow rate L1. Furthermore, under the control of the control device 100, the exhaust mechanism 70 discharges the gas in the processing space S from the exhaust port 71 to the outside of the processing space S at a predetermined flow rate L2. The gas supply amount of the gas supply mechanism 60 and the gas discharge amount of the exhaust mechanism 70 are controlled so that the flow rate relationship is L1 < L2. Therefore, gas corresponding to the difference (L2-L1) is supplied to the processing space S from the gas flow path 81 and the gas flow path 82. In addition, the gas flow path 82 is either in a closed state (closed by the upper chamber 43 abutting against the support ring 44) or in a state with a very small flow path cross-sectional area compared to the gas flow path 81. Therefore, the amount of gas supplied to the processing space S via gas flow path 81 becomes much larger than the amount of gas supplied to the processing space S via gas flow path 82. Furthermore, control is performed so that the flow rate L3 of the gas supplied from gas flow path 81 is greater than the flow rate L1 of the gas supplied from gas release unit 50, i.e., the relationship L3 > L1 is satisfied.

[0123] When the gas flow rate is controlled as described above, the gas supplied from the gas flow path 81 changes its direction of travel near the end 81a of the gas flow path 81, forming an upward airflow F3 that moves upward while moving towards the center of the wafer W (the direction where the exhaust port 71 is provided). This upward airflow F3 is formed due to the large exhaust volume from the exhaust port 71. However, compared with the upward airflows F1 and F2 described in the first embodiment, the upward airflow F3 is an airflow that moves further towards the inner periphery of the wafer W.

[0124] When the exhaust port 71 is located inside the periphery of the gas release section 50 opposite to the wafer W, the gas flowing in from the end 81a of the gas flow path 81 moves toward the exhaust port 71 located inside the outer periphery of the wafer W. Therefore, the sublimation generated from the wafer W during heat treatment moves toward the exhaust port 71 together with the rising gas flow F3.

[0125] Thus, in the heat treatment apparatus (heat treatment unit U8A), the heat treatment of the wafer W is also promoted by releasing processing gas from the gas release section 50 to the surface of the wafer W. On the other hand, in the heat treatment unit U8, the gas flowing therein forms an upward airflow around the substrate by the gas flow path 81 and the exhaust mechanism 70 that exhausts gas from the chamber through the exhaust port 71. Therefore, the movement of sublimation generated from the wafer W during heat treatment is blocked by the upward airflow. Therefore, the scattering of sublimation from the coating on the substrate can be suppressed.

[0126] In addition, such as Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure 9 Figure As shown, when the exhaust port 71 is located inside the periphery of the gas release section 50 (opposite surface 50a), the rising airflow F3 is formed in a manner that moves towards the inside of the wafer W. In this case, it is particularly effective in preventing the adhesion of sublimation material to the lower part of the processing space S (e.g., the surface of the heating plate 21, the inner peripheral end 44b of the support ring 44) that is outside the periphery of the wafer W. This is believed to be because, by employing a structure in which the rising airflow F3 moves towards the inside of the wafer W, the airflow moving towards the outer periphery of the wafer W can be further suppressed compared to the structure example described in the first embodiment. Therefore, it can be said that the structure in which the exhaust port 71 is located inside the periphery of the gas release section 50 (opposite surface 50a) is advantageous, especially in preventing the adhesion of sublimation material to the lower part of the processing space S.

[0127] Further, the arrangement of the exhaust hole 71 inward of the periphery of the gas release portion 50 (of the opposing surface 50a) is not particularly limited. However, in order to suppress the gas flow to the outer side of the periphery of the wafer W substantially equally over the entire periphery of the wafer W, it is considered to arrange the exhaust hole 71 near the center of the gas release portion 50 (of the opposing surface 50a). By arranging the exhaust hole 71 in such a manner that the distance from the gas flow path 81, 82 provided at the periphery of the wafer W to the exhaust hole 71 does not appear to be largely uneven, the scattering of the sublimates to the periphery of the wafer W can be suppressed over the entire periphery of the wafer W.

[0128] [Others]

[0129] The above describes various exemplary embodiments, but is not limited to the above-described exemplary embodiments, and various omissions, substitutions, and modifications can be made. Further, other embodiments can be formed by combining elements of different embodiments.

[0130] For example, the structure of the gas flow paths 81, 82 that supply gas to the heat treatment unit U8 is not limited to the above-described embodiments. For example, the gas flow path 81 can be arranged in a range below the surface of the wafer W at the outlet on the chamber 41 side, and the flow path thereof can be appropriately changed. In the above description, the gas flow path 81 has a region extending in the horizontal direction along the surface of the heating plate 21, but for example, the gas flow path 81 can be provided in such a manner as to pass through the heating plate 21.

[0131] Further, in the above description, the case where the outer space S1 is provided is described, but the outer space S1 can not be provided. In this case, the shape of the upper chamber 43 can be changed to a shape where the outer space S1 does not exist, and the upper chamber 43 can be made to also have the function of the flow regulating portion of the support ring 44.

[0132] According to the above description, various embodiments of the present application are described in the present specification for the purpose of illustration, and it is understood that various modifications can be made without departing from the scope and spirit of the present application. Therefore, the various embodiments disclosed in the present specification are not limiting, and the true scope and spirit are indicated by the appended claims.

Claims

1. A heat treatment apparatus for heat treating a substrate with a resist coating and the coating having undergone exposure treatment, characterized in that, Comprising: a heating plate capable of supporting and heating the substrate; a chamber covering a processing space above the heating plate; a gas releasing portion which releases a processing gas toward the substrate on the heating plate from above within the chamber; a gas supply portion which supplies a gas into the chamber from a position lower than the surface of the substrate within the chamber; and an exhaust portion which exhausts the inside of the chamber via an exhaust hole provided above the processing space and having an opening toward the lower side, the gas supply portion includes: a gas flow path connected to the inside of the chamber; and a flow path area control portion which controls the end portion of the gas flow path on the chamber side, the gas flow path is formed in a ring shape outside the substrate supported by the heating plate and has an area extending in the horizontal direction.

2. The heat treatment apparatus according to claim 1, wherein: the coating film is a coating film formed of a metal-containing resist.

3. The heat treatment apparatus according to claim 1, wherein: the exhaust hole is provided at a position inside than the periphery of the gas releasing portion.

4. The heat treatment apparatus according to claim 1, wherein: at least a part of the exhaust hole is provided at a position outside than the substrate.

5. The heat treatment apparatus according to claim 1, wherein: the gas supply portion supplies a gas into the chamber from a position outside than the substrate.

6. The heat treatment apparatus according to claim 1, wherein: there is an outside space in the chamber at a position above than the flow path area control portion and outside than the substrate in the radial direction of the substrate, there is a second gas supply portion connected to the outside space and different from the gas supply portion which supplies a gas into the chamber, and the second gas supply portion is connected to the outside space on the flow path area control portion side.

7. The heat treatment apparatus according to any one of claims 1 to 5, wherein: the gas flow path is capable of transferring heat from the heating plate.

8. The heat treatment apparatus according to claim 7, wherein: the gas flow path has a flow path in which the heating plate is exposed.

9. The heat treatment apparatus according to any one of claims 1 to 5, wherein: the gas releasing portion includes a plurality of releasing holes arranged so as to be spread along a surface opposite to the substrate on the heating plate.

10. The heat treatment apparatus according to claim 9, wherein: the exhaust portion has a plurality of exhaust holes along a surface opposite to the substrate, the plurality of releasing holes are provided at the same size or distribution density as each other outside and inside the plurality of exhaust holes.

11. The heat treatment apparatus according to claim 9, wherein: the gas releasing portion is connected to a gas supply source via a gas supply path and releases a moisture concentration-adjusted moisture-containing gas supplied from the gas supply source toward the substrate.

12. The heat treatment apparatus according to claim 11, wherein: the gas releasing portion also releases an inert gas toward the substrate.

13. The heat treatment apparatus according to any one of claims 1 to 5, wherein: ​ ​ The exhaust portion exhausts the inside of the chamber at an exhaust amount greater than a flow rate of the gas released by the gas release portion.

14. A heat treatment method of performing heat treatment by supporting and heating a substrate on a hot plate, for a substrate on which a resist film is formed and the resist film has been subjected to an exposure process, characterized by comprising: in the chamber, supplying a gas from a position lower than the surface of the substrate into the chamber, and performing the heat treatment while forming an upward gas flow around the substrate by exhausting the inside of the chamber through an exhaust hole provided above a processing space in the chamber and having an opening directed downward, the step of supplying a gas into the chamber includes: supplying gas into the chamber by a gas flow path connected to the chamber, wherein the gas flow path is formed in a ring shape outside the substrate supported by the hot plate, and has a region extending in a horizontal direction; and the step of controlling the flow path area of the chamber side end portion of the gas flow path by a rectifying portion provided to the chamber.

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