Electroplating solution stirring module and wafer electroplating system including the same

Abstract

The present invention discloses an electroplating solution stirring module and a wafer electroplating system including the same. The electroplating solution stirring module includes an electroplating tank, a rotating part and a flow disturbing part; the rotating part is positioned in the electroplating tank and can rotate relative to the surface of the wafer located in the electroplating tank; the flow disturbing part is arranged on the rotating part, and the flow disturbing part is at least located on one side of the rotating part facing the wafer, and the flow disturbing part can disturb the electroplating solution in the electroplating tank. In the present invention, the rotating part rotates relative to the positioning groove, and the positioning groove plays a role in limiting the rotating part, so as to enhance the stability of the rotation process, and the distance between the flow disturbing part and the wafer surface can be designed to be a smaller value. The smaller the distance between the flow disturbing part and the wafer surface, the better the flow disturbing effect of the flow disturbing part, and the faster the exchange speed between the electroplating solutions, thereby improving the reliability and yield of the integration technology.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing, and particularly to an electroplating solution stirring module and a wafer electroplating system including the same. Background Art

[0002] In the process results of wafer electroplating, one of the key indicators is the uniformity of the wafer surface. The more uniform the wafer surface is, the better the wafer electroplating process is. The uniformity of the wafer surface is affected by various factors. One of the influencing factors is the filling technology of deep holes in TSV (Through-Silicon Via technology). The blind holes on the wafer are filled by copper electroplating to achieve vertical electrical interconnection of the through-silicon vias. The electroplating filling process has low cost and fast deposition speed. During the electroplating process, substances such as copper in the electroplating solution will gradually deposit in the deep holes, and the copper content in the electroplating solution itself will decrease. In order to ensure that the copper content in the electroplating solution used to fill the deep holes is sufficient, it is necessary to continuously replace the electroplating solution in the deep holes, that is, to stir the electroplating solution to make the electroplating solutions exchange with each other.

[0003] Currently, a system for realizing the exchange of electroplating solution is to set a stirrer that can move horizontally near the wafer surface. The stirrer penetrates into the electroplating solution, and the exchange of electroplating solutions is realized by reciprocating translation in the horizontal direction. However, the moving inertia of the stirrer in this way is large, and it is easy to generate shaking in the up and down direction. Therefore, the safety distance between the stirrer and the wafer is relatively large to prevent the stirrer from touching the wafer surface during the movement and causing wear to the wafer surface. The greater the distance between the stirrer and the wafer, the worse the turbulence effect of the stirrer on the electroplating solution on the wafer surface, especially inside the deep holes, resulting in untimely exchange of the electroplating solution inside the deep holes and reducing the reliability of the integration technology and the product yield. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to overcome the defect that the exchange speed of the electroplating solution on the wafer surface, especially inside the deep holes, is relatively low in the prior art, and to provide an electroplating solution stirring module and a wafer electroplating system including the same.

[0005] The present invention solves the above technical problem by the following technical solutions:

[0006] An electroplating solution stirring module, the electroplating solution stirring module includes an electroplating tank, a rotating part and a turbulence part;

[0007] The rotating part is positioned in the electroplating tank and can rotate relative to the wafer surface located in the electroplating tank;

[0008] The turbulence part is arranged on the rotating part, the turbulence part is at least located on the side of the rotating part facing the wafer, and the turbulence part can cause turbulence to the electroplating solution in the electroplating tank.

[0009] In this solution, the rotating part drives the flow disturbing part to rotate, so as to realize the flow disturbance of the electroplating solution in the electroplating tank by the flow disturbing part, and then realize the exchange between electroplating solutions. The above setting enables the rotating part to rotate relative to the positioning groove, that is, the positioning groove plays a role in limiting the rotating part, so as to enhance the stability of the rotation process. Compared with the traditional reciprocating translation of the stirrer in the horizontal direction, the inertia generated by the movement of the rotating part is smaller, and the positioning relationship between the rotating part and the electroplating tank is more reliable. This solution can design a smaller distance between the flow disturbing part and the wafer surface. The smaller the distance between the flow disturbing part and the wafer surface, the better the flow disturbing effect of the flow disturbing part, and the faster the exchange speed between electroplating solutions, thus improving the reliability of the integration technology and the product yield.

[0010] Preferably, the minimum distance between the end of the flow disturbing part close to the wafer and the wafer surface is 0.9 mm - 1 mm.

[0011] In this solution, the method of driving the flow disturbing part to rotate by the rotating part is adopted for flow disturbance, which can significantly shorten the shortest distance between the flow disturbing part and the wafer, thus enhancing the flow disturbing effect of the flow disturbing part and accelerating the exchange speed between electroplating solutions.

[0012] Preferably, the number of the flow disturbing parts on the rotating part is multiple, and the distances from the ends of the multiple flow disturbing parts close to the wafer to the wafer surface are the same.

[0013] In this solution, the above setting makes the flow disturbing effects of the electroplating solutions at various positions above the wafer surface approximately the same, that is, the exchange speeds between electroplating solutions are approximately the same, so that the filling effects between the deep holes of the wafer can be approximately the same.

[0014] Preferably, the flow disturbing part includes a strip-shaped first flow disturbing unit, and the first flow disturbing unit passes through the rotation central axis of the rotating part.

[0015] In this solution, a specific structure of the flow disturbing part is provided. The above setting can make the area of the surface formed by the rotation path of the first flow disturbing unit reach the maximum area value that the flow disturbing part can disturb, thus simplifying the structure of the flow disturbing part.

[0016] Preferably, a first through hole is provided at the intersection of the first flow disturbing unit and the rotation central axis of the rotating part, and both ends of the first through hole penetrate the first flow disturbing unit.

[0017] In this solution, since the first flow disturbing unit rotates around the rotation central axis of the rotating part, the rotation center of the first flow disturbing unit always remains unchanged and is always in a state of being blocked by the first flow disturbing unit. According to the requirements of the electroplating process, if it is always blocked, it will cause the deep holes of the wafer corresponding to the blocked part to be unable to be electroplated normally, reducing the electroplating process result and the uniformity of the wafer surface.

[0018] Preferably, the first flow disturbing unit can rotate around its own axis, and a second through hole is provided on the first flow disturbing unit, and the second through hole is asymmetrically arranged relative to the rotation center axis of the rotating part.

[0019] In this solution, the first flow disturbing unit rotates by the pressure difference of the electroplating solution on both sides when passing through the electroplating solution. Since the first flow disturbing unit passes through the rotation center axis of the rotating part, when the structure of the first flow disturbing unit is symmetric with respect to the rotation center axis of the rotating part, the pressures of the electroplating solution on both sides of the first flow disturbing unit may reach equilibrium, resulting in the inability of the first flow disturbing unit to rotate. The above setting enables a pressure difference to be formed on both sides of the first flow disturbing unit to generate self-rotation.

[0020] Preferably, the flow disturbing part further includes at least one second flow disturbing unit, the second flow disturbing unit is in a strip-shaped structure, and the second flow disturbing unit is arranged on at least one side of the first flow disturbing unit.

[0021] In this solution, the second flow disturbing unit can enhance the flow disturbing effect of the flow disturbing part. The more the number of the second flow disturbing units, the better the flow disturbing effect.

[0022] Preferably, the number of the second flow disturbing units is multiple, and the multiple second flow disturbing units are arranged on both sides of the first flow disturbing unit. The structure of the second flow disturbing unit on one side of the first flow disturbing unit after being symmetric with respect to the first flow disturbing unit is staggered from the second flow disturbing unit on the other side of the first flow disturbing unit.

[0023] In this solution, the above setting is to make the rotation paths of the second flow disturbing units on both sides of the first flow disturbing unit not completely the same, while ensuring the flow disturbing effect, reducing the number of the second flow disturbing units, and simplifying the structure of the flow disturbing part.

[0024] Preferably, the projected area of the flow disturbing part on the wafer surface is greater than or equal to 30% of the wafer surface area.

[0025] In this solution, the larger the projected area of the flow disturbing part on the wafer surface, the more areas of the electroplating solution that the flow disturbing part can disturb simultaneously when the electroplating solution stirring system is in the working state, and the better the flow disturbing effect.

[0026] Preferably, the flow disturbing part is a strip-shaped impeller, the impeller has a flow disturbing surface, and the impeller can rotate around its own axis.

[0027] In this solution, the self-rotation of the impeller can further enhance the flow disturbing effect on the electroplating solution and improve the exchange speed between the electroplating solutions.

[0028] Preferably, the electroplating tank is provided with a groove annularly arranged along the rotation direction of the rotating part, and one end of the rotating part facing the groove has a boss for positioning with the groove.

[0029] In this solution, a fixing method of the rotating part relative to the electroplating tank is provided. The above setting structure is simple, easy to disassemble and assemble, and reduces the man-hours required for assembly.

[0030] Preferably, the rotating part is a gear structure, and the electroplating solution stirring module further includes an external gear, which meshes with the rotating part and can drive the rotating part to rotate.

[0031] In this solution, the gear drive has high stability, long service life, and a large speed ratio range.

[0032] Preferably, the rotating part is a hollow structure, the flow disturbing part is arranged in the hollow area of the rotating part, and the flow disturbing part is arranged closer to the wafer surface relative to the rotating part.

[0033] In this solution, the above setting of the flow disturbing part can occupy the space in the middle of the rotating part and reduce the space occupied by the electroplating solution stirring module as a whole.

[0034] A wafer electroplating system, which includes a wafer fixture and the electroplating solution stirring module as described above.

[0035] In this solution, an application field of the electroplating stirring module is provided. The wafer fixture is used to hold the wafer and fix the wafer above the electroplating solution stirring module to perform the electroplating process.

[0036] Preferably, the height of the wafer fixture is adjustable, and the wafer fixture can adjust the distance between the wafer surface and the flow disturbing part.

[0037] In this solution, since the position of the electroplating solution stirring module always remains fixed, the above setting can adjust the distance between the wafer surface and the flow disturbing part, enhance the flow disturbing effect, and prevent the flow disturbing part from touching the wafer surface, improving the flexibility of wafer electroplating.

[0038] The positive and progressive effects of the present invention are as follows: The rotating part of the present invention drives the flow disturbing part to rotate, so as to realize the flow disturbance of the electroplating solution in the electroplating tank, and further realize the exchange between electroplating solutions. The rotating part rotates relative to the positioning groove, that is, the positioning groove plays a role in limiting the rotating part, so as to enhance the stability of the rotation process. Compared with the traditional reciprocating translation of the stirrer in the horizontal direction, the inertia generated by the movement of the rotating part is smaller, and the positioning relationship between the rotating part and the electroplating tank is more reliable. In this solution, the distance between the flow disturbing part and the surface of the wafer can be designed to be smaller, and the smaller the distance between the flow disturbing part and the surface of the wafer, the better the flow disturbing effect of the flow disturbing part, and the faster the exchange speed between electroplating solutions, thereby improving the reliability of the integration technology and the product yield. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 FIG. is a schematic three-dimensional structure diagram of an electroplating solution stirring module according to an embodiment of the present invention.

[0040] Figure 2 FIG. is a schematic top view structure diagram of an electroplating solution stirring module according to an embodiment of the present invention.

[0041] Figure 3 is along Figure 2 the cross-sectional structure diagram taken along A-A in

[0042] Figure 4 FIG. is another schematic three-dimensional structure diagram of an electroplating solution stirring module according to an embodiment of the present invention.

[0043] Figure 5 FIG. is a schematic three-dimensional structure diagram of the connection state between the rotating part and the flow disturbing part according to an embodiment of the present invention.

[0044] Figure 6 FIG. is a schematic three-dimensional structure diagram of a first flow disturbing unit according to an embodiment of the present invention.

[0045] Figure 7 FIG. is a schematic cross-sectional structure diagram of a first flow disturbing unit according to an embodiment of the present invention.

[0046] Figure 8 FIG. is a schematic three-dimensional structure diagram of a second flow disturbing unit according to an embodiment of the present invention.

[0047] Figure 9 FIG. is a schematic cross-sectional structure diagram of a second flow disturbing unit according to an embodiment of the present invention.

[0048] Figure 10 FIG. is a schematic three-dimensional structure diagram of a rotating part according to an embodiment of the present invention.

[0049] Figure 11 FIG. is a schematic three-dimensional structure diagram of an electroplating tank according to an embodiment of the present invention.

[0050] Figure 12Schematic perspective view of a retaining ring according to an embodiment of the present invention.

[0051] Figure 13 Schematic cross-sectional view of a wafer electroplating system according to an embodiment of the present invention.

[0052] Figure 14 Schematic cross-sectional view of a wafer electroplating system according to an embodiment of the present invention.

[0053] Description of reference numerals:

[0054] Wafer 1

[0055] Wafer surface 11

[0056] Electroplating solution stirring module 2

[0057] Electroplating tank 21

[0058] Groove 211

[0059] Rotating part 22

[0060] Boss 221

[0061] First space 222

[0062] Turbulence part 23

[0063] First turbulence unit 231

[0064] Second turbulence unit 232

[0065] Turbulence surface 233

[0066] Through hole 234

[0067] First external gear 241

[0068] Second external gear 242, rotating shaft 243

[0069] Bearing seat 25

[0070] Retaining ring 26

[0071] Second space 261

[0072] Wafer fixture 3

[0073] Clamping part 31 Detailed implementation manners

[0074] The present invention will be further described below by way of embodiments, but the present invention is not limited to the scope of the embodiments accordingly.

[0075] Embodiment 1

[0076] As Figure 13As shown in the figure, this embodiment provides a wafer electroplating system for electroplating a wafer 1 to achieve the filling of deep holes in the wafer. The wafer electroplating system includes an electroplating solution stirring module 2 and a wafer fixture 3. The electroplating solution stirring module 2 is used to disturb the electroplating solution to achieve the exchange between electroplating solutions, make the temperature of the electroplating solution in each part uniform, and continuously update the components in the electroplating solution in the wafer electroplating area, so that the optimal current density and deposition rate can be maintained all the time, improving the wafer electroplating process. The wafer fixture 3 is used to hold the wafer 1 so that the wafer 1 can be fixed at the position to be processed, ensuring the stability during the processing.

[0077] As Figure 1-4 shown, the electroplating solution stirring module 2 includes an electroplating tank 21, a rotating part 22 and a flow disturbing part 23. The electroplating tank 21 is used to hold the electroplating solution. The flow disturbing part 23 is arranged above the rotating part 22 and connected to the rotating part 22. Both the rotating part 22 and the flow disturbing part 23 are arranged in the electroplating tank 21 and immersed in the electroplating solution in the electroplating tank 21.

[0078] As Figure 3 shown, the opening of the electroplating tank 21 is arranged upward. The rotating part 22 is positioned in the electroplating tank 21. The electroplating tank 21 can limit the horizontal translation and downward movement of the rotating part 22, so that the rotating part 22 can only rotate in a specific direction on the horizontal plane, improving the stability of the rotation process.

[0079] Specifically, as Figure 10-11 shown, the electroplating tank 21 has a groove 211 arranged annularly along the rotation direction of the rotating part 22. One end of the rotating part 22 facing the groove 211, that is, the lower end of the rotating part 22, has an annular boss 221 for positioning with the groove 211. The boss 221 is accommodated in the groove 211. The groove 211 and the boss 221 are loosely fitted and the width of the boss 221 is slightly smaller than the width of the groove 211, so as to reserve a space for the rotating part 22 to rotate in the groove 211, ensuring the smooth rotation of the rotating part 22. The electroplating tank 21 and the rotating part 22 adopt a concave-convex fit, which has a simple structure, is convenient for disassembly and assembly, and can reduce the working hours required for assembly. Among them, the width direction of the groove 211 and the width direction of the boss 221 are both parallel to the radial direction of the boss 221.

[0080] In this embodiment, the rotation of the rotating part 22 is realized by means of gear transmission. Gear transmission has high stability, long service life and a large speed ratio range, and can more accurately adjust the rotation speed of the rotating part 22, thereby controlling the flow disturbance of the electroplating solution and adjusting the exchange speed of the electroplating solution.

[0081] Specifically, as Figure 1-4As shown, the rotating part 22 in this embodiment is a gear structure, and the plating liquid stirring module 2 also includes a driving assembly for driving the rotating part 22 to rotate, and the driving assembly includes a first external gear 241 and a second external gear 242. The first external gear 241 is arranged outside the plating tank 21, and the first external gear 241 is located above the second external gear 242. The two are connected by a rotating shaft 243, and the second external gear 242 is arranged inside the plating tank 21 and meshes with the rotating part 22. A driving member for driving the first external gear 241 to rotate is also arranged outside the plating tank 21. Under the action of the rotating shaft 243, the first external gear 241 rotates under the driving of the driving member and can drive the second external gear 242 to rotate synchronously, thereby driving the rotation of the rotating part 22 meshed with the second external gear 242. Since the plating tank 21 always contains plating liquid, the above-mentioned driving assembly can prevent the plating liquid from flowing out of the inside of the plating tank 21 through the connection between the rotating part 22 and the driving assembly.

[0082] like Figure 4-5 As shown, the spoiler 23 is arranged above the rotating part 22, that is, the spoiler 23 is closer to the wafer surface 11 than the rotating part 22, and the rotating part 22 can drive the spoiler 23 connected thereto to rotate along the rotation direction of the rotating part 22, so as to realize that the spoiler 23 disturbs the plating solution in the plating tank 21. The spoiler 23 in this embodiment includes a first spoiler unit 231 and four second spoiler units 232, and the first spoiler unit 231 and the second spoiler unit 232 are both long strip impeller structures, the length of the impeller extends in the horizontal direction, and has a spoiler surface 233 for disturbing the plating solution. The first spoiler unit 231 and the second spoiler unit 232 are parallel and located at the same height to avoid the first spoiler unit 231 and the second spoiler unit 232 overlapping the path of the rotating part 22, and make the plating solution spoiler effect at various places above the wafer surface 11 roughly the same, that is, the exchange speed between the plating solutions is roughly the same, so that the filling effect between the deep holes of the wafer can be roughly the same.

[0083] like Figure 5-9 As shown, the first spoiler unit 231 and the second spoiler unit 232 are both detachably connected to the rotating part 22 through the bearing seat 25, and the first spoiler unit 231 and the second spoiler unit 232 both have three blades. During the process of the rotating part 22 driving the spoiler part 23 to rotate, the spoiler surface 233 of the first spoiler unit 231 and the spoiler surface 233 of the second spoiler unit 232 rotate under the pressure of the plating solution, so that the first spoiler unit 231 and the second spoiler unit 232 rotate around their own axes respectively, thereby further enhancing the spoiler effect on the plating solution and improving the exchange speed between the plating solutions.

[0084] like Figure 5As shown, the first spoiler unit 231 passes through the rotation center axis of the rotation part 22. The area of the surface formed by the rotation path of the first spoiler unit 231 following the rotation of the rotation part 22 is the maximum area value that the spoiler part 23 can cause flow disturbance. Thus, in other alternative embodiments, the spoiler part 23 may only include one first spoiler unit 231 without additionally providing other second spoiler units 232, thereby simplifying the structure of the spoiler part 23 and reducing the cost of the spoiler part 23.

[0085] As Figure 6-7 shown, a through hole 234 is provided on the first spoiler unit 231. The intersection of the first spoiler unit 231 and the rotation center axis of the rotation part 22 falls within the range of the through hole 234, and the through hole 234 is asymmetrically arranged relative to the rotation center axis of the rotation part 22.

[0086] Since the first spoiler unit 231 rotates around the rotation center axis of the rotation part 22 in addition to its own rotation, the rotation center of the first spoiler unit 231 always remains unchanged and will always be in a state of being blocked by the first spoiler unit 231. According to the requirements of the electroplating process, if it is always blocked, the deep holes of the wafer corresponding to the blocked part cannot be electroplated normally, reducing the electroplating process result and the uniformity of the wafer surface 11. Therefore, in this embodiment, a through hole 234 is provided at the rotation center of the first spoiler unit 231 following the rotation of the rotation part 22. Under the action of the self-rotation of the first spoiler unit 231, the rotation center of the first spoiler unit 231 will not always be in a blocked state, so that no electroplating blind spots will be generated, and the electroplating solution can be exchanged through the through hole 234, thereby improving the electroplating process result at this place.

[0087] In addition, since the first spoiler unit 231 rotates by the pressure difference of the electroplating solution on both sides when disturbing the electroplating solution, but the first spoiler unit 231 rotates around the rotation center axis of the rotation part 22 in addition to its own rotation, and the first spoiler unit 231 has a symmetric structure relative to the rotation center axis of the rotation part 22 without additionally opening holes, the pressure of the electroplating solution on both sides of the first spoiler unit 231 may reach equilibrium, causing the first spoiler unit 231 to be unable to rotate. In this embodiment, the through hole 234 asymmetrically arranged relative to the rotation center axis of the rotation part 22 is provided, so that a pressure difference can be formed on both sides of the first spoiler unit 231 to generate self-rotation.

[0088] In other alternative embodiments, according to different required electroplating solution exchange speeds, the number of the second flow disturbing units 232 can be reduced or increased. The more the number of the second flow disturbing units 232 is, the better the flow disturbing effect on the electroplating solution produced by the flow disturbing part 23 is. The second flow disturbing units 232 are at least arranged on one side of the first flow disturbing unit 231 and do not overlap with the first flow disturbing unit 231, and the multiple second flow disturbing units 232 do not overlap with each other either. Preferably, when the number of the second flow disturbing units 232 is multiple and they are arranged on both sides of the first flow disturbing unit 231, the structure of the second flow disturbing units 232 on one side of the first flow disturbing unit 231 after being symmetric with respect to the first flow disturbing unit 231 is staggered from the second flow disturbing units 232 on the other side of the first flow disturbing unit 231, that is, the second flow disturbing units 232 on both sides of the first flow disturbing unit 231 are not symmetric with respect to the first flow disturbing unit 231, so that the rotation paths of the second flow disturbing units 232 on both sides of the first flow disturbing unit 231 can be not completely the same, while ensuring the flow disturbing effect, reducing the number of the second flow disturbing units 232, and simplifying the structure of the flow disturbing part 23.

[0089] The through holes 234 in this embodiment can solve the problems of electroplating blind spots and the self-rotation of the first flow disturbing unit 231 at the same time. In other alternative embodiments, a first through hole and a second through hole can also be respectively arranged on the first flow disturbing unit 231. The first through hole is arranged at the intersection of the first flow disturbing unit 231 and the rotation central axis of the rotating part 22 to solve the problem of electroplating blind spots, and the second through hole is arranged on one side of the first through hole to make the two ends of the first flow disturbing unit 231 unbalanced, so as to solve the problem of the self-rotation of the first flow disturbing unit 231.

[0090] In other alternative embodiments, the first flow disturbing unit 231 and the second flow disturbing units 232 are not limited to the impeller structure with three blades as described above, and the flow disturbing part 23 is not limited to the strip-shaped impeller either. Those skilled in the art can adopt other structures that can achieve the same effect to achieve the purpose of disturbing the flow. Preferably, the adopted flow disturbing part 23 can rotate by itself and has a relatively large flow disturbing range.

[0091] Preferably, when the flow disturbing part 23 is in a non-rotating state, the projected area of the flow disturbing part 23 on the wafer surface 11 is greater than or equal to 30% of the area of the wafer surface 11. For this embodiment, it means that the sum of the projected areas of one first flow disturbing unit 231 and four second flow disturbing units 232 on the wafer surface 11 needs to be greater than or equal to 30% of the surface area of the wafer surface 11. The larger the projected area of the flow disturbing part 23 on the wafer surface 11 is, the more areas of the electroplating solution that the flow disturbing part 23 can disturb simultaneously when the electroplating solution stirring system is in a working state, and the better the flow disturbing effect is.

[0092] Such as Figure 10As shown, the rotating part 22 is a hollow gear, and the hollow part in the middle of the rotating part 22 forms a first space 222. In this embodiment, the rotating part 22 is set as a hollow gear structure, which can save the material consumed by the rotating part 22 and reduce the production cost. On the other hand, the first space 222 of the rotating part 22 can accommodate part of the spoiler 23. When the distance between the wafer surface 11 and the rotating part 22 is the same, the diameter of the spoiler 23 can be designed to be larger to enhance the spoiler effect and increase the exchange speed of the electroplating solution; and when the diameter of the spoiler 23 is the same, the spoiler 23 can occupy the first space 222 in the middle of the rotating part 22, reducing the space occupied by the electroplating solution stirring module 2 as a whole.

[0093] In this embodiment, the rotating part 22 drives the spoiler 23 to rotate, so that the spoiler 23 spoils the plating solution in the plating tank 21, thereby realizing the exchange between the plating solutions. The rotating part 22 rotates relative to the positioning groove, that is, the positioning groove plays a role in limiting the rotating part 22, so that the stability of the rotation process can be enhanced. Compared with the traditional reciprocating translation of the stirrer in the horizontal direction, the present embodiment can design a smaller distance between the spoiler 23 and the wafer surface 11, and the minimum distance between the end of the spoiler 23 close to the wafer 1 and the wafer surface 11 can be controlled at about 0.9mm-1mm, which significantly reduces the distance between the spoiler 23 and the wafer surface 11. The smaller the distance between the spoiler 23 and the wafer surface 11, the better the spoiler effect of the spoiler 23, and the faster the exchange speed between the plating solutions, thereby improving the reliability of the integrated technology and the product yield.

[0094] Preferably, if Figure 1-3 As shown, a retaining ring 26 is also provided in the electroplating tank 21. The retaining ring 26 is provided above the rotating part 22 and is fixedly connected to the electroplating tank 21. The outermost part of the rotating part 22 is provided between the retaining ring 26 and the electroplating tank 21. The retaining ring 26 can limit the upward movement of the rotating part 22 to prevent the spoiler 23 installed on the rotating part 22 from touching the wafer surface 11 located above it during the rotation process, thereby enhancing the stability of the rotation process. Even if the rotating part 22 shakes upward during the rotation process, the retaining ring 26 can limit the maximum upward movement range of the rotating part 22, thereby further preventing the spoiler 23 installed on the rotating part 22 from colliding with the wafer 1 located above it. Figure 12 As shown, the retaining ring 26 is a hollow annular structure, and the hollow portion in the middle of the retaining ring 26 forms a second space 261 . The second space 261 is used to accommodate the wafer 1 and the spoiler 23 , providing a space for implementing the electroplating process of the wafer 1 .

[0095] This embodiment only discloses the structure of the electroplating solution stirring module 2 with one spoiler 23. In other alternative embodiments, the number of spoilers 23 can be multiple. Preferably, the distances from the ends of the multiple spoilers 23 close to the wafer 1 to the wafer surface 11 are the same, so that the turbulence effects of the electroplating solution at various positions above the wafer surface 11 are approximately the same, that is, the exchange speeds between the electroplating solutions are approximately the same, thereby enabling the filling effects between the deep holes of the wafer to be approximately the same.

[0096] As Figure 13 shown, the wafer fixture 3 is arranged above the electroplating solution stirring module 2. The clamping part 31 of the wafer fixture 3 faces downward, that is, towards the electroplating solution stirring module 2. The wafer 1 is installed on the clamping part 31 of the wafer fixture 3 and remains in a clamped state. The wafer 1 is immersed in the electroplating solution of the electroplating tank 21 and is located in the second space 261 of the retaining ring 26. The surface of the wafer 1 facing the spoiler 23 is the above-mentioned wafer surface 11. The rotating part 22 drives the spoiler 23 to rotate relative to the wafer surface 11, and the spoiler 23 stirs the electroplating solution below the wafer 1.

[0097] Since the position of the electroplating solution stirring module 2 always remains fixed, preferably, the height of the wafer fixture 3 in this embodiment is adjustable. By adjusting the height of the wafer fixture 3, the distance between the wafer surface 11 and the spoiler 23 can be adjusted, so as to enhance the turbulence effect while preventing the spoiler 23 from touching the wafer surface 11 and improving the flexibility of electroplating the wafer 1.

[0098] In other alternative embodiments, the height of the wafer fixture 3 is not adjustable. As Figure 14 shown, the wafer fixture 3 and the electroplating tank 21 are fixedly connected, and the two remain relatively stationary.

[0099] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is the orientation or positional relationship based on the normal use state of the component, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or component referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation to the present invention, unless otherwise specified in the text.

[0100] Although the specific embodiments of the present invention have been described above, those skilled in the art should understand that this is only an example. The protection scope of the present invention is defined by the appended claims. Without departing from the principles and essence of the present invention, those skilled in the art can make various changes or modifications to these embodiments, but these changes and modifications all fall within the protection scope of the present invention.

Claims

1. An electroplating solution stirring module, characterized in that, The electroplating solution stirring module includes an electroplating tank, a rotating part, and a flow disturbing part; The rotating part is positioned inside the electroplating tank and can rotate relative to the surface of the wafer located inside the electroplating tank; The flow disturbing part is arranged on the rotating part, and the flow disturbing part is at least located on the side of the rotating part facing the wafer, and the flow disturbing part can disturb the electroplating solution in the electroplating tank; The flow disturbing part includes a strip-shaped first flow disturbing unit, and the first flow disturbing unit passes through the rotation central axis of the rotating part; the first flow disturbing unit can rotate around its own axis, and a second through hole is arranged on the first flow disturbing unit, and the second through hole is asymmetrically arranged relative to the rotation central axis of the rotating part; The electroplating solution stirring module further includes a driving component, and the driving component is used to drive the rotating part to rotate.

2. The electroplating solution stirring module according to claim 1, characterized in that The minimum distance between the end of the flow disturbing part close to the wafer and the wafer surface is 0.9 mm - 1 mm.

3. The electroplating solution stirring module according to claim 1, wherein The number of the flow disturbing parts on the rotating part is multiple, and the distances from the ends of the multiple flow disturbing parts close to the wafer to the wafer surface are the same.

4. The electroplating solution stirring module according to claim 1, wherein, A first through hole is arranged at the intersection of the first flow disturbing unit and the rotation central axis of the rotating part, and both ends of the first through hole penetrate through the first flow disturbing unit.

5. The electroplating solution stirring module according to claim 1, characterized in that, The flow disturbing part further includes at least one second flow disturbing unit, the second flow disturbing unit is of a strip-shaped structure, and the second flow disturbing unit is arranged on at least one side of the first flow disturbing unit.

6. The electroplating solution stirring module according to claim 5, wherein, The number of the second flow disturbing units is multiple, the multiple second flow disturbing units are arranged on both sides of the first flow disturbing unit, and the structure of the second flow disturbing unit located on one side of the first flow disturbing unit after being symmetric with respect to the first flow disturbing unit is staggered from the second flow disturbing unit located on the other side of the first flow disturbing unit.

7. The electroplating solution stirring module according to claim 1, characterized in that, The projected area of the flow disturbing part on the wafer surface is greater than or equal to 30% of the surface area of the wafer.

8. The electroplating solution stirring module according to claim 1, characterized in that The flow disturbing part is a strip-shaped impeller, the impeller has a flow disturbing surface, and the impeller can rotate around its own axis.

9. The electroplating solution stirring module according to claim 1, wherein, The electroplating tank has a groove annularly arranged along the rotation direction of the rotating part, and one end of the rotating part facing the groove has a boss for positioning with the groove.

10. The electroplating solution stirring module according to claim 1, characterized in that, The rotating part is of a gear structure, the electroplating solution stirring module further includes an external gear, and the external gear meshes with the rotating part and can drive the rotating part to rotate.

11. The electroplating solution stirring module according to claim 1, wherein The rotating part is of a hollow structure, the flow disturbing part is arranged in the hollow area of the rotating part, and the flow disturbing part is arranged closer to the wafer surface relative to the rotating part.

12. A wafer electroplating system, characterized in that, The wafer electroplating system includes a wafer fixture and the electroplating solution stirring module according to any one of claims 1 - 11.

13. The wafer electroplating system according to claim 12, wherein, The height of the wafer fixture is adjustable, and the wafer fixture can adjust the distance between the wafer surface and the flow disturbing part.

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