Temperature control system and method for removing metal oxide film

Abstract

A processing method includes: loading a substrate onto a substrate support in a processing chamber, the substrate having a metal oxide film deposited on its surface; controlling the temperature of a coolant supplied to a coolant channel through the substrate support based on a predetermined temperature, where the predetermined temperature is less than 50 degrees Celsius; and selectively etching the metal oxide film while controlling the temperature of the coolant based on the predetermined temperature, which includes: flowing molecular hydrogen into the processing chamber; and exciting a plasma in the processing chamber.

Description

[0001] Cross - reference to related applications

[0002] This application claims priority to U.S. Patent Application No. 16 / 012,120, filed on June 19, 2018. The entire disclosure of the above - cited application is incorporated herein by reference. Technical Field

[0003] The present disclosure relates to a plasma chamber, and more particularly to a temperature control system and method for removing a metal oxide film to prevent powder formation. Background Art

[0004] The background description provided here is for the purpose of generally presenting the background of the present disclosure. The work of the currently named inventors, to the extent it is described in this background art section as well as in various aspects of the specification that could not be determined to be prior art at the time of filing the application, is neither expressly nor implicitly admitted to be prior art against the present disclosure.

[0005] A substrate processing system can be used to process substrates such as semiconductor wafers. Exemplary processes that can be performed on the substrate include, but are not limited to, deposition, etching, cleaning, and other types of processes. The substrate can be disposed on a substrate support in a processing chamber, such as a pedestal or an electrostatic chuck (ESC). During processing, a gas mixture can be introduced into the processing chamber, and plasma can be used to initiate a chemical reaction.

[0006] The temperature of a substrate (e.g., a semiconductor wafer) in a processing chamber can be controlled. For example, one or more heaters can be disposed in a substrate support assembly, and the power supplied to the heaters can be controlled to control the temperature of the substrate on the substrate support. Additionally or alternatively, one or more fluids can be circulated through one or more flow channels using valves within the substrate support to heat and / or cool the substrate and the substrate support. Summary of the Invention

[0007] In one aspect, a processing method includes: loading a substrate having a metal oxide film deposited on its surface onto a substrate support in a processing chamber; controlling the temperature of a coolant provided to a coolant channel through the substrate support based on a predetermined temperature, where the predetermined temperature is less than 50 degrees Celsius; and selectively etching the metal oxide film while controlling the temperature of the coolant based on the predetermined temperature, including: flowing molecular hydrogen into the processing chamber; and exciting plasma in the processing chamber.

[0008] In a further aspect, the metal oxide film is a tin oxide film.

[0009] In a further feature, the predetermined temperature is less than the temperature of the coolant during deposition of the metal oxide film on the substrate.

[0010] In a further feature, the predetermined temperature is less than or equal to 30 degrees Celsius.

[0011] In a further feature, the predetermined temperature is less than or equal to 25 degrees Celsius.

[0012] In a further feature, the processing chamber is located within a room; and the predetermined temperature is less than the temperature within the room.

[0013] In a further feature, selectively etching the metal oxide film further comprises pumping a gas out of the processing chamber.

[0014] In a further feature, flowing molecular hydrogen into the processing chamber comprises flowing only molecular hydrogen into the processing chamber.

[0015] In one feature, a processing method comprises: supplying a coolant to at least one of: a coolant channel of a substrate support passing through a processing chamber; and a coolant channel surrounding the processing chamber, based on a predetermined temperature, wherein the predetermined temperature is less than 50 degrees Celsius; and removing a metal oxide film from within the processing chamber while supplying the coolant based on the predetermined temperature, comprising: flowing molecular hydrogen into the processing chamber; and exciting a plasma within the processing chamber.

[0016] In a further feature, the metal oxide film is a tin oxide film.

[0017] In a further feature, the predetermined temperature is less than or equal to 30 degrees Celsius.

[0018] In a further feature, the predetermined temperature is less than or equal to 25 degrees Celsius.

[0019] In a further feature, the processing chamber is located within a room; and the predetermined temperature is less than the temperature within the room.

[0020] In a further feature, the processing method further comprises: loading a substrate onto the substrate support of the processing chamber; and depositing the metal oxide film on a surface of the substrate.

[0021] In a further feature, the processing method further comprises supplying the coolant based on a second predetermined temperature greater than the predetermined temperature during deposition of the metal oxide film on the surface of the substrate.

[0022] In a further feature, removing the metal oxide film further comprises pumping a gas out of the processing chamber.

[0023] In a further feature, flowing molecular hydrogen into the processing chamber includes flowing only molecular hydrogen into the processing chamber.

[0024] In one feature, a substrate processing system includes a processing chamber and a controller. The processing chamber includes a substrate support. The controller is configured to: control the temperature of a coolant provided to a coolant channel through the substrate support based on a predetermined temperature, where the predetermined temperature is less than 50 degrees Celsius; and while controlling the temperature of the coolant based on the predetermined temperature, selectively etch a metal oxide film deposited on a surface of a substrate disposed on the substrate support, the selective etching including: flowing molecular hydrogen into the processing chamber; and exciting a plasma in the processing chamber.

[0025] In a further feature, the metal oxide film is a tin oxide film.

[0026] In a further feature, the predetermined temperature is less than the temperature of the coolant during deposition of the metal oxide film on the substrate.

[0027] In a further feature, the predetermined temperature is less than or equal to 30 degrees Celsius.

[0028] In a further feature, the predetermined temperature is less than or equal to 25 degrees Celsius.

[0029] In a further feature, the processing chamber is located in a room; and the predetermined temperature is less than the temperature in the room.

[0030] In a further feature, the controller is further configured to pump gas out of the processing chamber.

[0031] In a further feature, the controller is further configured to flow only molecular hydrogen into the processing chamber.

[0032] In one feature, a substrate processing system includes a processing chamber and a controller, the processing chamber including a substrate support. The controller is configured to supply coolant to at least one of: a coolant channel through the substrate support; and a coolant channel surrounding the processing chamber, based on a predetermined temperature, where the predetermined temperature is less than 50 degrees Celsius; and while supplying the coolant based on the predetermined temperature, remove a metal oxide film from the processing chamber, which includes: flowing molecular hydrogen into the processing chamber; and exciting a plasma in the processing chamber.

[0033] In a further feature, the metal oxide film is a tin oxide film.

[0034] In a further feature, the predetermined temperature is less than or equal to 30 degrees Celsius.

[0035] In a further feature, the predetermined temperature is less than or equal to 25 degrees Celsius.

[0036] In a further feature, the processing chamber is located within a room; and the predetermined temperature is less than the temperature within the room.

[0037] In a further feature, the controller is further configured to deposit the metal oxide film on a surface of a substrate disposed on the substrate support.

[0038] In a further feature, the controller is further configured to: supply the coolant based on a second predetermined temperature greater than the predetermined temperature during depositing the metal oxide film on the surface of the substrate.

[0039] In a further feature, the controller is further configured to pump gas out of the processing chamber.

[0040] In a further feature, the controller is further configured to allow only molecular hydrogen to flow into the processing chamber.

[0041] Based on the detailed description, claims, and drawings, a further scope of applicability of the present disclosure will become apparent. The detailed description and specific examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. Description of the Drawings

[0042] The present disclosure will be more fully understood from the detailed description and the drawings, in which:

[0043] Figure 1 A functional block diagram including an exemplary substrate processing chamber;

[0044] Figure 2 A functional block diagram including an exemplary cooling system containing a coolant assembly;

[0045] Figure 3 A flowchart depicting an exemplary method for depositing a metal oxide film on a substrate within a processing chamber and periodically sweeping the metal oxide film out of the processing chamber without turning the metal oxide film into powder;

[0046] Figure 4 A flowchart depicting an exemplary method for etching a metal oxide film deposited on a substrate without turning the metal oxide film into powder;

[0047] Figure 5 An exemplary graph of the thickness of a metal oxide on a substrate and the temperature at which the etching of the metal oxide is performed;

[0048] Figure 6Exemplary illustrations of a substrate surface after etching a metal oxide film and wiping some areas of the substrate at various different temperatures.

[0049] In the drawings, reference numerals may be reused to identify like and / or identical elements. Detailed Description

[0050] A coolant may be used to regulate the temperature of a substrate disposed on a substrate support within a processing chamber. For example, during deposition of a metal oxide film, the coolant may be supplied to a coolant channel in a base of the substrate support and / or to a coolant channel or tube surrounding the processing chamber at a first predetermined temperature. During etching of the metal oxide film from the substrate and / or during cleaning of an inner surface of the processing chamber, the coolant may be supplied to the coolant channel or tube at a second predetermined temperature.

[0051] The second predetermined temperature is less than the first predetermined temperature. However, if the second predetermined temperature is too high, all or part of the metal oxide film may decompose into powder (e.g., metal hydride) during etching or cleaning. Removing all of the powder from the processing chamber is difficult and time-consuming. If left in the processing chamber, the powder may increase the defect count of one or more substrates processed later in the processing chamber.

[0052] According to the present disclosure, the second predetermined temperature is reduced to a predetermined temperature to ensure that the metal oxide film remains volatile (and does not turn into powder) during etching and / or cleaning of the processing chamber. If the metal oxide remains volatile, it can be evaporated and pumped out of the processing chamber.

[0053] Now referring to Figure 1 , a functional block diagram of an exemplary substrate processing system 100 is shown. By way of example only, the substrate processing system 100 may be used for chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), atomic layer deposition (ALD), plasma-enhanced ALD (PEALD), etching, and / or one or more types of processing.

[0054] The substrate processing system 100 includes a processing chamber 102 that encloses the components of the substrate processing system 100 and houses a radio frequency (RF) plasma. Although an example of the substrate processing system 100 and the processing chamber 102 is shown by way of example, the present disclosure may also be applied to other types of substrate processing systems and processing chambers, such as substrate processing systems that generate plasma in situ, substrate processing systems that achieve remote plasma generation and delivery (e.g., using plasma tubes, microwave tubes), and the like. In various implementations, deposition may be performed in one processing chamber and etching may be performed in another processing chamber.

[0055] The processing chamber 102 includes an upper electrode 104 and a substrate support 106, such as an electrostatic chuck (ESC). A substrate 108 is disposed on the substrate support 106, and one or more plasma processes are performed on the substrate 108. For example, a metal oxide film can be deposited on the substrate 108. Additionally or alternatively, etching of a metal oxide film previously deposited on the substrate 108 can be performed. The metal oxide film can be tin oxide or another suitable metal oxide film.

[0056] As the substrate is processed, the metal oxide film deposited on the substrate may also build up over time on the processing chamber 102 (e.g., components of the processing chamber 102 and the inner surface of the processing chamber 102). A cleaning cycle of the processing chamber 102 can be performed periodically (e.g., every M substrates, where M is an integer greater than 1) to remove (or clean) the metal oxide film from within the processing chamber 102.

[0057] Etching of the metal oxide film deposited on the substrate and cleaning of the metal oxide film are performed from within the processing chamber 102 using a plasma and molecular hydrogen (H2) (i.e., using hydrogen as an etchant). The etching and cleaning can be performed using fluorine, chlorine, bromine, and / or iodine plasma chemistries. However, using chlorine, bromine, and / or iodine reacts with and / or damages the processing chamber 102 and one or more components within the processing chamber 102 (e.g., aluminum components).

[0058] The upper electrode 104 can include a gas distribution device, such as a showerhead 109, which introduces and distributes a process gas within the processing chamber 102. The showerhead 109 can include a stem, one end of which is connected to the upper surface of the processing chamber 102. The base portion is generally cylindrical and extends radially outward from the opposite end of the stem at a position spaced from the top surface of the processing chamber 102. The surface or panel of the base portion of the showerhead 109 facing the substrate includes a plurality of holes through which the process gas or purge gas flows. Alternatively, the upper electrode 104 can include a conductive plate, and the process gas can be introduced in another manner.

[0059] The substrate support 106 can include a conductive bottom plate 110 that serves as a lower electrode. The bottom plate 110 supports a ceramic layer 112. A thermal resistance layer 114 (e.g., a bonding layer) can be disposed between the ceramic layer 112 and the bottom plate 110. The bottom plate 110 can include one or more coolant channels 116 for allowing a coolant to flow through the bottom plate 110. In some examples, a protective seal 176 can be disposed around the perimeter of the thermal resistance layer 114 between the ceramic layer 112 and the bottom plate 110.

[0060] The RF generation system 120 generates an RF voltage and outputs it to one of the upper electrode 104 and the lower electrode (e.g., the bottom plate 110 of the substrate support 106) to excite and sustain the plasma. The other of the upper electrode 104 and the bottom plate 110 may be DC grounded, AC grounded, or floating. By way of example only, the RF generation system 120 may include an RF voltage generator 122 that generates an RF voltage, which is fed to the upper electrode 104 or the bottom plate 110 through a matching and distribution network 124. In other examples, the plasma may be generated inductively or remotely. Although, for purposes of illustration, the RF generation system 120 corresponds to a capacitively coupled plasma (CCP) system, the present disclosure may also be applied to other types of systems, such as, for example only, a transformer coupled plasma (TCP) system, a CCP cathode system, a remote microwave plasma generation and delivery system, etc.

[0061] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, …, and 132-N (collectively referred to as gas sources 132), where N is an integer greater than zero. The gas sources 132 supply one or more deposition gases, etching gases, carrier gases, inert gases, etc. and mixtures thereof.

[0062] For example, the gas sources 132 supply one or more gases to deposit a metal oxide film. Additionally or alternatively, the gas sources 132 supply one or more purge gases (e.g., molecular hydrogen) for use in etching and / or cleaning the metal oxide film. The gas sources 132 also supply a purge gas.

[0063] The gas sources 132 are connected to the manifold 140 through valves 134-1, 134-2, …, and 134-N (collectively referred to as valves 134) and mass flow controllers 136-1, 136-2, …, and 136-N (collectively referred to as mass flow controllers 136). The output of the manifold 140 is fed to the processing chamber 102. By way of example only, the output of the manifold 140 is fed to the showerhead 109 and output from the showerhead 109 to the processing chamber 102.

[0064] The temperature controller 142 is connected to a plurality of heating elements, such as thermal control elements (TCEs) 144 arranged in the ceramic layer 112. For example, the TCEs 144 may include, but are not limited to, large heating elements corresponding to respective regions in a multi-zone heating plate and / or an array of micro heating elements disposed across multiple regions of the multi-zone heating plate. The TCEs 144 may be, for example, resistive heaters (which generate heat when power is applied to the heaters respectively), or another suitable type of heating element. The temperature controller 142 controls the TCEs 144 to control the temperature at various positions on the substrate support 106 and the substrate 108.

[0065] The temperature controller 142 also communicates with the coolant assembly 146 and controls the flow of coolant (fluid) through the coolant channel 116. The coolant can be a liquid or a gas. In some types of processing chambers, such as those in which deposition is performed, the coolant may also circulate through the coolant channel 145 surrounding the processing chamber. The coolant channel 145 can be a coolant channel 145 formed in the wall of the processing chamber 102 and / or a coolant conduit (e.g., a tube) surrounding the processing chamber 102. In a processing chamber (in which etching is performed), the coolant channel 145 can be implemented or omitted.

[0066] The temperature controller 142 operates the coolant assembly 146 to selectively pass the coolant through the coolant channel 116 and / or the coolant channel 145 to cool the substrate support 106 and / or the processing chamber 102. The temperature controller 142 can control the TCE 144 together with the coolant assembly 146 to achieve one or more target temperatures and / or one or more target coolant flow rates, for example, during one or more processes.

[0067] The valve 150 and the pump 152 can be used to evacuate (purge) reactants and other gases from the processing chamber 102. The system controller 160 can be used to control the components of the substrate processing system 100. The robot 170 can be used to transfer the substrate onto the substrate support 106 and remove the substrate from the substrate support. For example, the robot 170 can transfer the substrate between the substrate support 106 and the load lock 172. Although shown as separate controllers, the temperature controller 142 can be implemented within the system controller 160.

[0068] In some examples, the substrate support 106 includes an edge ring 180. The edge ring 180 can be moved relative to the substrate 108 (e.g., can be moved up and down in the vertical direction). For example, the movement of the edge ring 180 can be controlled in response to the system controller 160 via an actuator. In some examples, the user can input control parameters to the system controller 160 via the user interface 184, which includes one or more input mechanisms, a display, etc.

[0069] Figure 2 A functional block diagram is included, which includes an exemplary cooling system 200 containing the coolant assembly 146. The cooling system 200 can include a first three-way proportional valve (hereinafter referred to as the first valve) 204, a second three-way proportional valve (hereinafter referred to as the second valve) 206, a third three-way proportional valve (hereinafter referred to as the third valve) 208, and first and second temperature control units (TCUs) (coolant sources) 216 and 218. The first TCU 216 supplies coolant at a first temperature. The second TCU 218 supplies coolant at a second temperature. Although an example of two TCUs is provided, only one TCU can be implemented or more than two TCUs can be implemented.

[0070] In some implementations, the flow rate of each of the first TCU 216 and the second TCU 218 can be fixed. The flow rates of the first TCU 216 and the second TCU 218 can be the same or different. For example, the first TCU 216 can have a first fixed flow rate, while the second TCU 218 can have a second fixed flow rate that is the same as or different from the first fixed flow rate. Each of the first TCU 216 and the second TCU 218 includes a pump. The pump of the first TCU 216 pumps the coolant to the first valve 204, while the pump of the second TCU 218 pumps the coolant to the second valve 206. Each of the first TCU 216 and the second TCU 218 also includes one or more heating devices (such as electric heaters) and / or one or more cooling devices (such as coolers) for heating and / or cooling the coolant within the first TCU 216 and the second TCU 218.

[0071] The first valve 204 has an input port 220, a first output port 222, and a second output port (or bypass) 224. The second valve 206 has an input port 226, a first output port 228, and a second output port (or bypass) 230. The third valve 208 has an input port 232, a first output port 234, and a second output port 236.

[0072] The input port 220 of the first valve 204 receives the coolant at the first fixed flow rate and at the first temperature from the first TCU 216 via the first fluid line 238. The input port 226 of the second valve 206 receives the coolant at the second fixed flow rate and at the second temperature from the second TCU 218 via the second fluid line 240.

[0073] The first output port 222 of the first valve 204 outputs a first portion of the received coolant from the first TCU 216 into the supply line 242. The first output port 228 of the second valve 206 outputs a first portion of the received coolant from the second TCU 218 into the supply line 242. The first portions of the coolant output from the first output ports 222 and 228 of the first valve 204 and the second valve 206, respectively, are mixed in the supply line 242. The mixed coolant in the supply line 242 is supplied to the substrate support 106 and / or the coolant channel surrounding the processing chamber 102.

[0074] The temperature controller 142 controls the first valve 204 and the second valve 206 to control the amount of the first portion of the coolant output from the first output ports 222 and 228 of the first valve 204 and the second valve 206, respectively, into the supply line 242. The temperature controller 142 controls the first valve 204 and the second valve 206 and determines the amount based on the target (or setpoint) temperature.

[0075] In various implementations, the temperature controller 142 can set a specific target temperature based on the process being performed. For example, the temperature controller 142 can set the target temperature to a first predetermined temperature that is greater than the temperature of the room in which the processing chamber 102 is located during the deposition of a metal oxide film (e.g., tin oxide) on the substrate 108. The first predetermined temperature can be about 125 degrees Celsius or another suitable temperature for depositing a metal oxide film on the substrate. The temperature of the room can be, for example, about 30 degrees Celsius or another suitable temperature. As used herein, about can mean plus or minus 10% of the relevant value.

[0076] The temperature controller 142 sets the target temperature to a second predetermined temperature during the etching of the metal oxide film on the substrate 108 and during the cleaning of the processing chamber 102 that has a metal oxide film deposited therein. The second predetermined temperature is calibrated and can be, for example, less than or equal to about 50 degrees Celsius, less than or equal to about 30 degrees Celsius, or less than or equal to about 25 degrees Celsius. The second predetermined temperature can be less than the temperature of the room in which the processing chamber 102 is located. The second predetermined temperature is calibrated such that during the etching of the metal oxide film and / or during the cleaning of the processing chamber, the metal oxide film evaporates and does not turn into powder (e.g., metal hydrides that decompose into powder at room temperature or higher).

[0077] The second (remaining) portion of the coolant received from the first TCU 216 through the first valve 204 can return to the first TCU 216 via the second outlet (or bypass) 224 of the first valve 204 and via the fluid line 244. The second (remaining) portion of the coolant received from the second TCU 218 through the second valve 206 can return to the second TCU 218 via the second outlet (or bypass) 230 of the second valve 206 and via the fluid line 246.

[0078] Since the second portions of the coolant received through the first valve 204 and the second valve 206 return to the first TCU 216 and the second TCU 218, the first TCU 216 and the second TCU 218 can supply the coolant to the first valve 204 and the second valve 206 at corresponding fixed flow rates. This can simplify the design of the first TCU 216 and the second TCU 218. For example, the pumps of the first TCU 216 and the second TCU 218 can operate at a single speed. Although operating at a single speed, the target temperature can be achieved by adjusting the openings of the first valve 204 and / or the second valve 206.

[0079] Coolant output from the substrate support 106 and / or the coolant channels surrounding the processing chamber 102 is received via the return line 248 at the input port 232 of the third valve 208. The third valve 208 distributes the returned coolant between the first TCU 216 and the second TCU 218.

[0080] A first portion of the coolant received from the substrate support 106 by the third valve 208 returns to the first TCU 216 via the first output port 234 of the third valve 208 and through the fluid lines 250 and 244. A second portion of the coolant received from the substrate support 106 by the third valve 208 returns to the second TCU 218 via the second output port 236 of the third valve 208 and through the fluid lines 252 and 246.

[0081] The temperature controller 142 controls the third valve 208 and determines the appropriate or target amounts of the first and second portions of the coolant output from the first output port 234 and the second output port 236 of the third valve 208 to the first TCU 216 and the second TCU 218, respectively. For example, the temperature controller 142 monitors the levels of the coolant in the first TCU 216 and the second TCU 218 based on the data received from the level sensors 217 and 219 in the first TCU 216 and the second TCU 218. The temperature controller 142 determines the levels of the coolant in each of the first TCU 216 and the second TCU 218 and determines the amounts of the first and second portions of the coolant returned to the first TCU 216 and the second TCU 218 based on the levels.

[0082] A temperature sensor 254 (e.g., a thermocouple) senses the temperature of the coolant supplied to the substrate support 106 and / or the coolant channel 145 via the supply line 242. A flow rate sensor (e.g., a flow meter) 256 measures the flow rate of the coolant supplied to the substrate support 106 and / or the coolant channel 145 via the supply line 242. Although not shown, a second temperature sensor and a second flow meter may be coupled to the return line 248 and measure the temperature and flow rate of the coolant returning from the substrate support 106 and / or the coolant channel 145 via the return line 248.

[0083] The temperature controller 142 may include a proportional integral derivative (PID) controller or another suitable type of closed-loop controller. The temperature controller 142 controls the amount of coolant supplied through the first valve 204 and the second valve 206 based on a target temperature at which the coolant will be supplied to the substrate support 106 and / or the coolant channels surrounding the processing chamber 102. For example, the temperature controller 142 may control the first valve 204 and the second valve 206 to adjust the temperature measured by the temperature sensor 254 toward or to the target temperature.

[0084] In addition, the temperature controller 142 controls the amount of coolant supplied through the first valve 204 and the second valve 206 based on a target flow rate at which the coolant will be supplied to the substrate support 106 and / or the coolant channel 145. For example, the temperature controller 142 may control the first valve 204 and the second valve 206 to adjust the flow rate measured by the flow rate sensor 256 toward or to the target flow rate.

[0085] Through the coolant assembly 146, the temperature of the coolant output can be switched from a first predetermined temperature to a second predetermined temperature within a period less than a predetermined switching period. The temperature of the coolant can also be switched from the second predetermined temperature to the first predetermined temperature within a period less than the predetermined switching period.

[0086] The predetermined switching period can be, for example, about 15 minutes or another suitable period. The temperature of the coolant can be switched, for example, from the first predetermined temperature to the second predetermined temperature to transition from depositing a metal oxide film on the substrate to cleaning the metal oxide film from the processing chamber 102 or etching the metal oxide film deposited on the substrate. The temperature of the coolant can be switched, for example, from the second predetermined temperature to transition from cleaning the metal oxide film from the processing chamber 102 or from etching the metal oxide film deposited on the substrate to depositing a metal oxide film on the substrate.

[0087] Figure 3 An exemplary method for depositing a metal oxide film on a substrate in the processing chamber 102 and periodically cleaning the processing chamber 102 is included. The control begins at 304, where the system controller 160 controls the gas delivery system 130 and the RF generation system 120 to deposit a metal oxide film (e.g., tin oxide) on the substrate on the substrate support 106 in the processing chamber 102 via plasma. During the deposition of the metal oxide film on the substrate, the temperature controller 142 controls the temperature of the coolant supplied to the substrate support 106 and / or the coolant channel 145 to a first predetermined temperature. As described above, the first predetermined temperature is greater than the temperature of the room in which the processing chamber 102 is located.

[0088] At 308, the system controller 160 determines whether the deposition of the metal oxide film on the substrate is complete. For example, the system controller 160 can determine whether the duration of the deposition of the metal oxide film on the substrate is greater than a predetermined deposition duration. If 308 is true, the control proceeds to 312. If 308 is false, the control can return to 304 and continue depositing the metal oxide film on the substrate.

[0089] At 312, the manipulator 170 can remove the substrate from the processing chamber 102. The manipulator 170 or another manipulator can move the substrate to another processing chamber to etch the metal oxide film. In various implementations, the etching of the metal oxide film can also be performed inside the processing chamber 102 before removing the substrate from the processing chamber 102.

[0090] At 316, the system controller 160 can increment the count value (e.g., add 1 to the count value). Thus, the count value corresponds to the number of substrates on which the metal oxide film has been deposited inside the processing chamber 102 since the processing chamber 102 was last cleaned to remove the metal oxide film from inside the processing chamber 102.

[0091] At 320, the system controller 160 can determine whether the count value is less than a predetermined value. This predetermined value can be calibrated and is an integer greater than one. This predetermined value corresponds to the number of substrates to be processed (on which the metal oxide film will be deposited) between consecutive cleaning cycles of the processing chamber 102. If 320 is true, the manipulator 170 or another manipulator can load the next substrate onto the substrate support 106 inside the processing chamber 102 at 332, and the control can return to 304 to start depositing the metal oxide film on the next substrate. If 320 is false, the control can proceed to 324. In various implementations, additionally or alternatively, the cleaning cycle of the processing chamber 102 can be performed at each predetermined time period and / or in response to a user input to perform the cleaning.

[0092] At 324, the temperature controller 142 controls the coolant assembly 146 for cleaning to supply coolant to the substrate support 106 and / or the coolant channel 145 at a second predetermined temperature. At 328, the system controller 160 can determine whether the temperature of the coolant supplied to the substrate support 106 and / or the coolant channel 145 is less than or equal to the second predetermined temperature. If 328 is true, the control proceeds to 332. If 328 is false, the control can return to 324 to continue cooling the substrate support 106 and / or the processing chamber 102. In various implementations, 328 can be omitted.

[0093] At 332, cleaning begins and the temperature controller 142 continues to control the coolant assembly 146 for cleaning to supply coolant to the substrate support 106 and / or the coolant channel 145 at a second predetermined temperature. At 336, the system controller 160 controls the gas delivery system 130 to supply molecular hydrogen H2 (e.g., only molecular hydrogen) to the processing chamber 102 to clean a metal oxide film (e.g., tin oxide) from within the processing chamber 102. At 340, the system controller 160 also controls the RF generation system 120 to excite a plasma within the processing chamber 102 to clean a metal oxide film (e.g., tin oxide) from within the processing chamber 102. By cooling the substrate support 106 and / or the coolant channel 145 to the second predetermined temperature during cleaning, the metal oxide is vaporized. This minimizes the amount of metal oxide that becomes powder.

[0094] The vaporized metal oxide can be discharged from the processing chamber 102 by the operation of the pump 152. At 344, the system controller 160 opens the valve 150 and turns on the pump 152 to purge the vaporized metal oxide from the processing chamber 102.

[0095] If powder forms, the powder may not be completely removed by the operation of the pump 152 but may be removed by additional (e.g., manual) cleaning of the processing chamber 102. If the powder is not removed from within the processing chamber 102, the powder will increase the defect count of the substrate processed later in the processing chamber 102.

[0096] At 348, the system controller 160 determines whether the cleaning is complete. For example, the system controller 160 may determine whether the time period since cleaning began (e.g., since the first instance at 332) is greater than a predetermined cleaning time period. If 348 is true, control may transfer to 332 as described above. If 348 is false, control may return to 332 to continue cleaning the processing chamber 102.

[0097] Figure 4 An exemplary method includes etching a metal oxide film on a substrate within the processing chamber 102 while cooling the substrate to prevent the metal oxide film from becoming powder. Control begins with a substrate (which has a metal oxide film) on the substrate support 106 located within the processing chamber 102. At 404, the temperature controller 142 controls the coolant assembly 146 to supply coolant to the substrate support 106 and / or the coolant channel 145 at a second predetermined temperature to etch the substrate.

[0098] At 408, the system controller 160 can determine whether the temperature of the coolant supplied to the substrate support 106 and / or the coolant channel 145 is less than or equal to a second predetermined temperature. If 408 is true, control proceeds to 412. If 408 is false, control can return to 404 to continue cooling the substrate support 106 and / or the processing chamber 102. In various implementations, 408 can be omitted.

[0099] At 412, etching begins, and the temperature controller 142 continues to control the coolant assembly 146 for etching to supply the coolant to the substrate support 106 and / or the coolant channel 145 at the second predetermined temperature. At 416, the system controller 160 controls the gas delivery system 130 to supply molecular hydrogen H2 (e.g., only molecular hydrogen) to the processing chamber 102 to etch a metal oxide film (e.g., tin oxide) from the substrate.

[0100] At 420, the system controller 160 controls the RF generation system 120 to excite a plasma in the processing chamber 102 to etch a metal oxide film (e.g., tin oxide) from the substrate. By cooling the substrate support 106 and / or the coolant channel 145 to the second predetermined temperature during etching, the metal oxide is vaporized. This minimizes the amount of metal oxide that turns into powder.

[0101] The vaporized metal oxide can be exhausted from the processing chamber 102 by the operation of the pump 152. At 424, the system controller 160 opens the valve 150 and turns on the pump 152 to purge the vaporized metal oxide from the processing chamber 102.

[0102] At 428, the system controller 160 determines whether the etching of the metal oxide film on the substrate is complete. For example, the system controller 160 can determine whether the time period since starting to etch the metal oxide film on the substrate (e.g., since the first instance at 412) is greater than a predetermined etching time period. If 428 is true, control proceeds to 432. If 428 is false, control can return to 412 and continue etching.

[0103] At 432, the robot 170 or another robot can remove the substrate from the processing chamber 102. The robot 170 or another robot can move the substrate to another processing chamber for additional processing. Alternatively, additional processing can be performed on the substrate within the processing chamber 102. The robot 170 or another robot can also load the next substrate onto the substrate support 106 within the processing chamber 102, and control can return to 404 to start etching the metal oxide film from the next substrate.

[0104] Figure 5Exemplary graph showing the relationship between the thickness of a metal oxide on a substrate and the temperature during etching of the metal oxide film on the substrate. A thickness of zero (0) corresponds to the initial thickness of the metal oxide film before etching is performed. As shown, when etching is performed at a temperature below 50 degrees Celsius, the thickness of the metal oxide film generally decreases due to etching. In this case, the metal oxide film is vaporized and removed (no powder is formed), thus resulting in a decrease in the thickness of the metal oxide present on the substrate.

[0105] However, when etching is performed at a temperature greater than 50 degrees Celsius, the thickness of the metal oxide increases. This increase can be attributed to the transformation of the metal oxide film from a film to a powder due to etching and the powder remaining on the substrate.

[0106] Figure 6 Exemplary diagrams showing the surface (e.g., substrate, inner surface of the processing chamber) after cleaning or etching the metal oxide film at various different temperatures. In each case, only certain areas of the surface are wiped (e.g., by hand).

[0107] As shown, when etching or cleaning is performed at a temperature below 50 degrees Celsius, no signs of wiping are visible. Thus, using a temperature below 50 degrees Celsius does not cause the metal oxide film to transform into a powder. Instead, the metal oxide is evaporated and removed.

[0108] However, when etching or cleaning is performed at a temperature above 50 degrees Celsius, signs of wiping can be seen. The visibility of the wipe increases with increasing temperature used. This indicates that as the temperature used increases, the amount of metal oxide film that transforms from a film to a powder increases.

[0109] The foregoing description is merely illustrative in nature and is in no way intended to limit the present disclosure, its application, or uses. The broad teachings of the present disclosure can be implemented in a variety of forms. Thus, while the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited because other modifications will become apparent upon study of the drawings, the specification, and the appended claims. It should be understood that one or more steps in a method can be performed in a different order (or simultaneously) without changing the principles of the present disclosure. Additionally, while each embodiment is described above as having certain features, any one or more of those features described with respect to any embodiment of the present disclosure can be implemented in and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and permutations of one or more of the embodiments with each other remain within the scope of the present disclosure.

[0110] Various terms are used to describe the spatial and functional relationships between components (e.g., between modules, between circuit components, between semiconductor layers, etc.), and the various terms include "connected", "joined", "coupled", "adjacent", "next to", "on top of", "above", "below", and "disposed". Unless the relationship between the first and second components is explicitly described as "direct", when such a relationship is described in the above disclosure, the relationship can be a direct relationship where there are no other intermediate components between the first and second components, but can also be an indirect relationship where there is one or more intermediate components between the first and second components (spatially or functionally). As used herein, the phrase "at least one of A, B, and C" should be construed to mean a logical (A or B or C) using non-exclusive logical OR, and should not be construed to mean "at least one of A, at least one of B, and at least one of C".

[0111] In some implementations, the controller is part of a system, and the system can be part of the above examples. Such systems can include semiconductor processing equipment, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer chucks, gas flow systems, etc.). These systems can be integrated with electronics for controlling their operations before, during, and after the processing of semiconductor wafers or substrates. The electronics can be referred to as a "controller", which can control various components or sub-components of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out of tools and other transfer tools, and / or load locks connected or interfaced to a particular system.

[0112] Generally speaking, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software for receiving instructions, issuing instructions, controlling operations, enabling cleaning operations, enabling endpoint measurements, etc. The integrated circuits can include a chip in the form of firmware storing program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors, or a microcontroller that executes program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files), and the individual settings (or program files) define the operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or die of a wafer.

[0113] In some implementations, the controller can be part of or coupled to a computer that is integrated with, coupled to, otherwise networked to, or a combination of the system. For example, the controller can be in the "cloud" or be all or part of a wafer fab host system, which can allow remote access to wafer processing. The computer can enable remote access to the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance criteria of multiple manufacturing operations, change the parameters of the current process, set processing steps to follow the current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide a process recipe to the system via a network (which can include a local network or the Internet). The remote computer can include a user interface that enables the input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify the parameters for each processing step to be performed during one or more operations. It should be understood that the parameters can be specific to the type of process to be performed and the type of tool, and the controller is configured to interface with or control the tool. Thus, as described above, the controller can be distributed, for example, by including one or more discrete controllers networked together and working towards a common purpose (e.g., the processes and controls described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber communicating with one or more integrated circuits remote (e.g., at the platform level or as part of a remote computer), which are combined to control the process on the chamber.

[0114] Exemplary systems can include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that can be associated with and / or used in the manufacture and / or preparation of semiconductor wafers.

[0115] As described above, depending on one or more processing steps to be performed by a tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a host computer, another controller, or tools used in a material transport that shuttles a wafer container between tool locations and / or load ports in a semiconductor manufacturing factory.

Claims

1. A substrate processing method, comprising: Loading a substrate onto a substrate support in a processing chamber, the substrate having a metal oxide film deposited on its surface; Controlling the temperature of a coolant supplied to a coolant channel through the substrate support based on a predetermined temperature, wherein the predetermined temperature is less than 50 degrees Celsius; and While controlling the temperature of the coolant based on the predetermined temperature, selectively etching the metal oxide film, comprising: Flowing molecular hydrogen into the processing chamber; and Exciting a plasma in the processing chamber, wherein the metal oxide film is a tin oxide film.

2. The processing method according to claim 1, wherein, The predetermined temperature is less than the temperature of the coolant during deposition of the metal oxide film on the substrate.

3. The processing method according to claim 1, wherein, The predetermined temperature is less than or equal to 30 degrees Celsius.

4. The processing method according to claim 1, wherein The predetermined temperature is less than or equal to 25 degrees Celsius.

5. The processing method according to claim 1, wherein: The processing chamber is located in a room; and The predetermined temperature is less than the temperature in the room.

6. The processing method according to claim 1, wherein selectively etching the metal oxide film further comprises pumping a gas out of the processing chamber.

7. The processing method according to claim 1, wherein flowing molecular hydrogen into the processing chamber comprises flowing only molecular hydrogen into the processing chamber.

8. A substrate processing method, comprising: Supplying a coolant to at least one of the following based on a predetermined temperature: A coolant channel through a substrate support of a processing chamber; and A coolant channel surrounding the processing chamber, wherein the predetermined temperature is less than 50 degrees Celsius; and While supplying the coolant based on the predetermined temperature, removing a metal oxide film from the processing chamber, comprising: Flowing molecular hydrogen into the processing chamber; and Exciting a plasma in the processing chamber, wherein the metal oxide film is a tin oxide film.

9. The processing method according to claim 8, wherein, The predetermined temperature is less than or equal to 30 degrees Celsius.

10. The processing method according to claim 8, wherein, The predetermined temperature is less than or equal to 25 degrees Celsius.

11. The processing method according to claim 8, wherein: The processing chamber is located in a room; and The predetermined temperature is less than the temperature in the room.

12. The processing method according to claim 8, further comprising: Loading a substrate onto the substrate support of the processing chamber; and Depositing the metal oxide film on the surface of the substrate.

13. The processing method according to claim 12, further comprising supplying the coolant based on a second predetermined temperature greater than the predetermined temperature during deposition of the metal oxide film on the surface of the substrate.

14. The processing method according to claim 8, wherein removing the metal oxide film further comprises pumping a gas out of the processing chamber.

15. The processing method according to claim 8, wherein flowing molecular hydrogen into the processing chamber comprises flowing only molecular hydrogen into the processing chamber.

16. A substrate processing system, comprising: A processing chamber including a substrate support; and A controller configured to Control the temperature of a coolant supplied to a coolant channel through the substrate support based on a predetermined temperature, wherein the predetermined temperature is less than 50 degrees Celsius; and While controlling the temperature of the coolant based on the predetermined temperature, selectively etch a metal oxide film deposited on a surface of a substrate disposed on the substrate support, the selective etching comprising: Flowing molecular hydrogen into the processing chamber; and Exciting a plasma in the processing chamber, wherein the metal oxide film is a tin oxide film.

17. The substrate processing system according to claim 16, wherein, The predetermined temperature is less than the temperature of the coolant during deposition of the metal oxide film on the substrate.

18. The substrate processing system according to claim 16, wherein, The predetermined temperature is less than or equal to 30 degrees Celsius.

19. The substrate processing system according to claim 16, wherein, The predetermined temperature is less than or equal to 25 degrees Celsius.

20. The substrate processing system according to claim 16, wherein: The processing chamber is located in a room; and The predetermined temperature is less than the temperature in the room.

21. The substrate processing system according to claim 16, wherein, The controller is further configured to pump gas out of the processing chamber.

22. The substrate processing system according to claim 16, wherein, The controller is further configured to only allow molecular hydrogen to flow into the processing chamber.

23. A substrate processing system comprising: A processing chamber including a substrate support; And A controller configured to: Based on a predetermined temperature, supply coolant to at least one of: A coolant channel passing through the substrate support; and A coolant channel surrounding the processing chamber, wherein the predetermined temperature is less than 50 degrees Celsius; And While supplying the coolant based on the predetermined temperature, removing a metal oxide film from the processing chamber, which includes: Flowing molecular hydrogen into the processing chamber; and Exciting a plasma in the processing chamber, wherein the metal oxide film is a tin oxide film.

24. The substrate processing system according to claim 23, wherein, The predetermined temperature is less than or equal to 30 degrees Celsius.

25. The substrate processing system according to claim 23, wherein, The predetermined temperature is less than or equal to 25 degrees Celsius.

26. The substrate processing system according to claim 23, wherein: The processing chamber is located in a room; and The predetermined temperature is less than the temperature in the room.

27. The substrate processing system according to claim 23, wherein, The controller is further configured to deposit the metal oxide film on a surface of a substrate disposed on the substrate support.

28. The substrate processing system according to claim 27, wherein, The controller is further configured to: during deposition of the metal oxide film on the surface of the substrate, supply the coolant based on a second predetermined temperature greater than the predetermined temperature.

29. The substrate processing system according to claim 23, wherein, The controller is further configured to pump gas out of the processing chamber.

30. The substrate processing system according to claim 23, wherein, The controller is further configured to only allow molecular hydrogen to flow into the processing chamber.

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