electronic device

Abstract

An electronic device is disclosed. The electronic device can include a source terminal, a gate terminal, and a protection circuit. The protection circuit can include a gate section including a first electrode and a second electrode, where the first electrode of the gate section is coupled to the gate terminal, and a source section including a first electrode and a second electrode, where the first electrode of the source section is coupled to the source terminal. A protection switch can include a control electrode, a first current-carrying electrode coupled to the gate terminal, and a second current-carrying electrode coupled to the source terminal. The second electrode of the gate section, the second electrode of the source section, and the control electrode of the protection switch can be coupled to each other.

Description

Technical Field

[0001] This disclosure relates to electronic devices, and more specifically, to electronic devices including protection circuits. Background Technology

[0002] When a transistor is turned on and off, it can experience transient conditions that are not present during the extended on / off period (when in steady state). Silicon-based transistors can withstand some transient conditions because of the presence of a pn junction (a diode-like structure) within the active region. These pn junctions can occur at the drain-body interface, source-body interface, etc. Unlike silicon-based transistors, high electron mobility transistors (HEMS) do not have a pn junction within the active region. Therefore, transient overvoltage or undervoltage conditions in HEMS may require protection circuitry to address these conditions. When the protection circuit is in the on state, such circuitry may only allow current to flow in one direction or have a relatively high current (i.e., significantly higher than the leakage current of a diode or transistor). Further improvements are needed to address transient overvoltage or overcurrent conditions. Summary of the Invention

[0003] One of the problems that this invention aims to solve is to overcome or at least reduce the serious adverse effects on transistors that may occur during transient overvoltage or overcurrent conditions.

[0004] In one aspect, an electronic device is provided. The electronic device may include a source terminal, a gate terminal, and a protection circuit. The protection circuit may include: a gate segment including a first electrode and a second electrode, wherein the first electrode of the gate segment is coupled to the gate terminal; a source segment including a first electrode and a second electrode, wherein the first electrode of the source segment is coupled to the source terminal; and a protection switch including a control electrode, a first current-carrying electrode coupled to the gate terminal, and a second current-carrying electrode coupled to the source terminal. The second electrode of the gate segment, the second electrode of the source segment, and the control electrode of the protection switch may be coupled to each other.

[0005] In one embodiment, the gate segment includes a first diode having a cathode that serves as the second electrode of the gate segment, and the source segment includes a second diode having a cathode that serves as the second electrode of the source segment.

[0006] In a specific implementation:

[0007] (1) The first diode may include a first gate diode, the first gate diode including a drain electrode, a gate electrode and a source electrode, wherein the drain electrode of the first gate diode and the gate electrode of the first gate diode are coupled to each other, and the source electrode of the first gate diode is coupled to the control electrode of the protection switch.

[0008] (2) The second diode may include a second gate diode, the second gate diode including a drain electrode, a gate electrode, and a source electrode, wherein the drain electrode of the second gate diode is coupled to the control electrode of the protection switch, and the gate electrode and the source electrode of the second gate diode are coupled to each other, or

[0009] (1) and (2) both.

[0010] In another implementation scheme:

[0011] (1) The gate segment may include: a first transistor, the first transistor including a drain electrode, a gate electrode, and a source electrode; and a first diode, the first diode including a cathode and an anode, wherein the drain electrode of the first transistor, the anode of the first diode, and the gate terminal are coupled to each other, the gate electrode of the first transistor is coupled to the cathode of the first diode, and the drain electrode of the first transistor is coupled to the control electrode of the protection switch.

[0012] (2) The source section may include: a second transistor, the second transistor including a drain electrode, a gate electrode, and a source electrode; and a second diode, the second diode including a cathode and an anode, wherein the drain electrode of the second transistor is coupled to the control electrode of the protection switch, the gate electrode of the second transistor is coupled to the cathode of the second diode, and the source electrode of the second transistor, the anode of the second diode, and the source terminal are coupled to each other, or

[0013] (1) and (2) both.

[0014] In yet another embodiment, the protection circuit may further include:

[0015] (1) A first transistor, the first transistor including a drain electrode, a gate electrode and a source electrode, wherein the drain electrode of the first transistor, the gate electrode of the first transistor and the control electrode of the protection switch are electrically connected at a first node, and the source electrode and the source terminal of the first transistor are electrically connected at a second node.

[0016] (2) A second transistor, the second transistor comprising a drain electrode, a gate electrode, and a source electrode, wherein the drain electrode and the gate terminal of the second transistor are electrically connected at a third node; and the gate electrode, the source electrode, and the control electrode of the protection switch are electrically connected at a fourth node, or

[0017] (1) and (2) both.

[0018] In yet another embodiment, the electronic device may further include a drain terminal and a power switch, the power switch including a drain electrode coupled to the drain terminal, a gate electrode coupled to the gate terminal, and a source electrode coupled to the source terminal.

[0019] In one specific implementation, the power switch has V TH And the protection circuit is configured such that when V GS Greater than V TH The protection switch is turned on at that time.

[0020] In a more specific embodiment, the power switch has V GSMax And the protection circuit is configured such that the protection switch is in V GS Reaching V GSMax It was connected previously.

[0021] In another specific embodiment, the power switch, the protection switch, the first transistor structure in the gate section, and the second transistor structure in the source section have threshold voltages that differ from each other by no more than 20%.

[0022] In yet another specific implementation, all transistor structures within the power switch and the protection circuit are high electron mobility transistors.

[0023] The technical effects achieved by this invention include protecting an active transistor with a protection circuit. The protection circuit may include a gate section coupled to the gate of the active transistor, a source section coupled to the source of the active transistor, and a protection switch coupled between the source and the gate of the active transistor. The protection switch can be turned on before the active transistor is irreversibly damaged during switching operation or under overvoltage or overcurrent conditions. Attached Figure Description

[0024] The accompanying drawings illustrate embodiments by way of example, but the embodiments are not limited to the drawings.

[0025] Figure 1 This includes a schematic diagram of a circuit according to one implementation scheme.

[0026] Figure 2 Including according to Figure 1 A schematic diagram of the circuit for a specific implementation scheme.

[0027] Figure 3 Including according to Figure 1 The schematic diagram and partial cross-sectional view of the circuit of the electronic device in the specific implementation scheme are depicted.

[0028] Figure 4 Including according to Figure 1 A schematic diagram and partial cross-sectional view of the circuit of an electronic device in another specific embodiment.

[0029] Figure 5 Including according to Figure 1 A schematic diagram and partial cross-sectional view of the circuit of an electronic device in another specific embodiment.

[0030] Figure 6 This includes a schematic diagram of a protection circuit according to one implementation scheme.

[0031] Figure 7 This includes a schematic diagram of a protection circuit according to another embodiment.

[0032] Figure 8 A graph showing the change in drain current of a protection switch as a function of the voltage difference between the gate and source terminals of an electronic device.

[0033] Figure 9 This includes a top-view illustration of the layout of electronic components, including a power switch and protection circuitry, according to one embodiment.

[0034] Figure 10 A top-view illustration of the layout of electronic components including a power switch and protection circuitry according to another embodiment.

[0035] Figure 11 The illustration includes a top view of the layout of electronic components, including a power switch and protection circuitry, according to yet another embodiment.

[0036] Figure 12 This includes a top-view illustration of the layout of a protection circuit after the formation of conductive components for the drain and source electrodes, according to one embodiment.

[0037] Figure 13 Including after forming conductive components for gate electrodes and local interconnects Figure 12 A top-view illustration of the layout of the protection circuit.

[0038] Figure 14 Including after forming the gate interconnect and source terminals Figure 13 A top-view illustration of the layout of the protection circuit.

[0039] Figure 15 A top-view illustration of the layout of a protection circuit according to another embodiment.

[0040] Figure 16 This includes a top-view illustration of the layout of a protection circuit according to yet another implementation scheme.

[0041] Figure 17 This includes a top-view illustration of the layout of the protection circuit according to another embodiment.

[0042] Figure 18 This includes a top-view illustration of the layout of the protection circuit according to another embodiment.

[0043] Those skilled in the art will recognize that the elements in the accompanying drawings are shown for simplicity and are not necessarily drawn to scale. For example, the dimensions of some elements in the drawings may be enlarged relative to other elements to aid in an understanding of embodiments of the invention. Detailed Implementation

[0044] The following description, in conjunction with the accompanying drawings, is provided to aid in understanding the teachings disclosed herein. The following discussion will focus on specific implementations and schemes of these teachings. This focus is provided to aid in describing the teachings and should not be construed as limiting the scope or applicability of the teachings. However, other schemes may be adopted based on the teachings disclosed in this application.

[0045] The term "coupling" and its variations are intended to refer to the transfer of electrical energy from one electronic component to another. The term "electrical connection" and its variations refer to a specific type of coupling where there is no intermediate circuit or electronic component. For example, two electronic components are electrically connected to each other when there is no circuit or other electronic component along the current path between them. Therefore, with respect to an electrical connection, the electrodes or terminals of the two components are electrically connected at a node and are at substantially the same voltage.

[0046] The term “high voltage” when referring to a layer, structure, or device means that such a layer, structure, or device (e.g., between the source and drain electrodes of a transistor in the off state) can withstand a voltage difference of at least 50V without exhibiting dielectric breakdown, avalanche breakdown, or the like.

[0047] In a top view of an electronic device, when in the ON state, the length of the gate electrode within the active region is parallel to the direction of the current, and the width of the gate electrode within the active region is perpendicular to the length of the gate electrode. If the transistor structure includes more than one gate electrode, the effective gate width is the sum of the widths of each gate electrode of the transistor. For a transistor structure with one gate electrode, the width of that gate electrode is the same as the effective gate width. Any portion of the gate electrode extending outside the active region is not used in the width calculation.

[0048] The terms "normal operation" and "normal operating condition" refer to conditions under which an electronic component or device is designed to operate. These conditions can be obtained from datasheets or other information regarding voltage, current, capacitance, resistance, or other electrical parameters. Therefore, normal operation does not include operating an electronic component or device outside its design limits.

[0049] The term "steady state" is intended to refer to a state in which a parameter does not change or may not change significantly over a relatively short period of time (such as a second or longer period). The term "transient state" is intended to refer to a state in which one or more parameters change significantly over a relatively short period of time (such as less than one second, and possibly less than 0.1 s). For example, an electrostatic discharge event or immediately following the switching on or off of a transistor or other switch can cause one or more devices to transition from a steady state to a transient state.

[0050] The term "V" GS "" refers to the voltage between the gate terminal and the source terminal of the circuit, where the gate terminal and the source terminal are electrically connected from outside the circuit.

[0051] The group number corresponds to a column in the periodic table based on the IUPAC periodic table of elements published on November 28, 2016.

[0052] For clarity of the accompanying drawings, certain regions of the device structure, such as doped or dielectric regions, may be shown as having generally straight edges and corners with precise angles. However, those skilled in the art will understand that the edges of such regions may not typically be straight and the corners may not have precise angles due to the diffusion and activation of dopants or the formation of layers.

[0053] The terms “on,” “over,” and “above” can be used to indicate that two or more elements are in direct physical contact with each other. Unlike “on,” “over” and “above” can also mean that two or more elements are not in direct contact with each other. For example, “above” can mean that one element is on top of another element, but the elements are not in contact with each other and there may be another element or one more element between the two elements.

[0054] The terms “comprising,” “containing,” “including,” “having,” or any other variations thereof are intended to cover non-exclusive inclusion. For example, a method, article, or apparatus that includes a list of features is not necessarily limited to those features, but may include other features not expressly listed or inherent to such a method, article, or apparatus. Furthermore, unless expressly stated to the contrary, “or” means inclusive or, not exclusive, or. For example, condition A or B is satisfied by any of the following: A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); and both A and B are true (or exist).

[0055] Furthermore, the terms "a" or "an" are used to describe the elements and components described herein. This is merely for convenience and to give a general meaning regarding the scope of the invention. The description should be considered to include one (a), at least one (a), or the singular form includes the plural form and vice versa, unless explicitly stated otherwise. For example, when a single item is described herein, more than one may be used instead of a single item. Similarly, in cases where more than one item is described herein, a single item may be used instead of the more than one item.

[0056] The use of the terms "about," "approximately," or "basically" is intended to indicate that the value of a parameter is close to a specified value or position. However, slight differences can prevent the value or position from being exactly as specified. Therefore, from the ideal goal of being exactly as described, a difference of up to ten percent (10%) for the value (and up to twenty percent (20%) for the semiconductor doping concentration) is a reasonable difference.

[0057] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Materials, methods, and examples are exemplary only and are not intended to be limiting. Many details regarding specific materials and processing actions not described herein are conventional and can be found in textbooks and other sources in the semiconductor and electronics fields.

[0058] Electronic devices may include protection circuitry, which includes a protection switch and one or more electronic components coupled to control electrodes of the power switch. The protection circuitry may be used in conjunction with another component within the electronic circuitry, such as the power switch. When the protection switch is turned on, substantially all the current flowing through the protection circuitry flows through the protection switch. Therefore, the other electronic components within the protection circuitry may be significantly smaller than the protection switch.

[0059] Protection circuits can be designed to allow bidirectional current, enabling them to conduct at positive or negative voltages outside the normal operating range of the electronic device. Therefore, no significant current flows through the protection circuit during normal operation of the electronic device. Protection circuits can help dissipate charge from electrostatic discharge events or other similar conditions that could cause the voltage difference between the terminals of the electronic device to become too high or too low. Protection circuits can be customized to allow a specific voltage to activate before the voltage difference between the terminals reaches a point where it could damage components (such as power switches) intended to be protected by the protection circuitry within the electronic device.

[0060] In one implementation, the protection circuit does not require a resistor electrically connected to the control electrode of the protection switch and one of the terminals used in the protection circuit. However, one or more resistors may be used internally within the protection circuit. Many different layouts are available, and therefore, designers can use a specific layout to meet the desired requirements of a particular application. The protection circuit is well-suited for protecting high electron mobility transistors (HEMTs) or other non-silicon transistors. In one implementation, the protection circuit can be implemented without adding any processing steps.

[0061] In one aspect, the electronic device may include a source terminal, a gate terminal, and a protection circuit. The protection circuit may include: a gate segment including a first electrode and a second electrode, wherein the first electrode of the gate segment is coupled to the gate terminal; a source segment including a first electrode and a second electrode, wherein the first electrode of the source segment is coupled to the source terminal; and a protection switch including a control electrode, a first current-carrying electrode coupled to the gate terminal, and a second current-carrying electrode coupled to the source terminal. The second electrode of the gate segment, the second electrode of the source segment, and the control electrode of the protection switch may be coupled to each other.

[0062] Figure 1 This includes a depiction of a circuit diagram of an electronic device 100 comprising a power switch 122 and a protection circuit 140. The current-carrying electrode of the power switch 122 is coupled to the drain terminal 102, the control terminal of the power switch 122 is coupled to the gate terminal 104, and another current-carrying electrode of the power switch 122 is coupled to the source terminal 106. In the embodiment shown, the power switch 122 is a transistor, wherein the drain electrode of the transistor is coupled to the drain terminal 102, the gate electrode of the transistor is coupled to the gate terminal 104, and the source electrode of the transistor is coupled to the source terminal 106. During normal operation, the circuit 100 can be controlled by applying a threshold voltage (V) higher than that of the power switch 122. TH ) enough V GSThe power switch 122 is turned on, and current flows through the power switch 122 from the drain terminal 102 to the source terminal 106. Regardless of whether the power switch 122 is in the on or off state, no significant current flows through the protection circuit 140 during normal operation of the electronic device 100.

[0063] In one embodiment, the power switch 122 has no doped regions, and therefore an electrostatic discharge structure or component that can be used with silicon-based devices may not be compatible with the electronic device 100. In one embodiment, the power switch 122 is a HEMT.

[0064] When V GS If the voltage becomes too high or too low, the protection circuit 140 helps reduce the likelihood that the power switch 122 will be damaged. The power switch 122 may have a maximum recommended voltage that it can withstand before it is damaged. GS (V GSMax ) and minimum recommendation V GS (V GSMin Therefore, V GS It should not be higher than V GSMax And it should not be lower than V GSMin V GSMax and V GSMin The absolute values ​​can be the same or different. For example, in one implementation, V GSMax It can be 7.5V, and V GSMin It can be -7.5V, and in another embodiment, V GSMax It can be 7.5V, and V GSMin It can be -10.0V. Therefore, the protection circuit 140 can be designed to withstand V... GS Significantly greater than the V of power switch 122 TH At that time and in V GS Reaching the V of power switch 122 GSMax or V GSMin Previously, the gate terminal 104 and the source terminal 106 were turned on and current was allowed to flow between the gate terminal and the source terminal.

[0065] In such Figure 1 In the illustrated embodiment, the protection circuit 140 includes a protection switch 142, a gate section 144, and a source section 146. When V GS A voltage sufficiently higher than the power switch 122V TH At the (referred to herein as the forward bias condition) voltage, gate segment 144 can provide sufficient voltage at V0. GS Reaching V GSMaxPreviously, the voltage of the protection switch 142 was turned on. The source section 146 can be designed to prevent significant current flow through the gate section 144 to the source node 206. When V GS When the voltage is sufficiently less than 0V (referred to as the reverse bias condition in this paper), source section 146 can provide sufficient voltage at V. GS Reaching V GSMin The voltage of the previously turned-on protection switch 142. The gate section 144 can be designed to prevent significant current flow through the source section 146 to the gate node 204.

[0066] In one embodiment, the protection switch 142 may be a transistor having a pair of current-carrying electrodes and a control electrode. The current-carrying electrode of transistor 142 closer to the gate node 204 may be the drain electrode during forward bias conditions and the source electrode during reverse bias conditions. Therefore, this type of current-carrying electrode will be referred to as the D / S electrode. The other current-carrying electrode of transistor 142 closer to the source node 206 may be the source electrode during forward bias conditions and the drain electrode during reverse bias conditions. Therefore, this type of current-carrying electrode will also be referred to as the S / D electrode. Figure 1 As shown in the implementation scheme, the D / S electrode of the protection switch 142 is coupled to the gate terminal 104, and the S / D electrode of the protection switch 142 is coupled to the source terminal 106.

[0067] One or more components reside in each of gate segment 144 and source segment 146. The number of components in gate segment 144 and source segment 146 may be the same or different. Gate segment 144 has an electrode coupled to gate terminal 104 and another electrode coupled to control electrode of protection switch 142. Source segment 146 has an electrode coupled to control electrode of protection switch 142 and another electrode coupled to source terminal 106. In one embodiment, one of the electrodes of gate terminal 104, D / S electrode of protection switch 142, and gate segment 144 is electrically connected to each other at gate node 204; the other electrode of gate segment 144, control electrode of protection switch 142, and source segment 146 is electrically connected to each other at node 222; and the other electrode of source segment 146, S / D electrode of protection switch 142, and source terminal 106 are electrically connected to each other at source node 206.

[0068] Figure 2 One embodiment includes protection circuitry 140, wherein gate segment 144 includes a set of diodes, and source segment 146 includes another set of diodes. Gate segment 144 may have the same or a different number of diodes than source segment 146. In another embodiment, each of gate segment 144 and source segment 146 may have fewer than three diodes. Figure 2In the illustrated embodiment, gate segment 144 may include diodes 242, 244, and 24x. Source segment 146 may include diodes 262, 264, and 26y.

[0069] Referring to gate section 144, the anode of diode 242 is coupled to gate node 204 and the D / S electrode of protection switch 142. The cathode of diode 242 is coupled to the anode of diode 244, the cathode of diode 244 is coupled to the anode of diode 24x, and the cathode of diode 24x is coupled to node 222. Referring to source section 146, the cathode of diode 26y is coupled to node 222, the anode of diode 26y is coupled to the cathode of diode 264, the anode of diode 264 is coupled to the cathode of diode 262, and the anode of diode 262 is coupled to source node 206. During the forward bias of protection circuit 140, the diodes in gate section 144 can provide the voltage to turn on protection switch 142, and the diodes in source section 146 do not allow significant current to flow through source section 146. During the reverse bias period of protection circuit 140, the diode in source segment 146 provides the voltage to turn on protection switch 142, and the diode in gate segment 144 does not allow significant current to flow through gate segment 144. Therefore, excess charge can be dissipated through protection switch 142. Protection circuit 140 is designed so that current does not flow through both gate segment 144 and source segment 146 simultaneously.

[0070] Figure 3 The document includes circuit diagrams of specific embodiments of the protection circuit 140 and cross-sectional views of exemplary, non-limiting electronic components within the electronic device. These cross-sectional views illustrate how the electronic device 100 can be implemented using physical structures. Figure 3 A cross-sectional view near the right side shows an exemplary power switch 122 that can be used with protection circuit 140.

[0071] In this implementation scheme, Figure 3 The gate diode in is used as such Figure 2The diodes are shown. For gate segment 144, each of gate diodes 342, 344, and 346 electrically connects its drain and gate electrodes to each other. For source segment 146, each of gate diodes 362, 364, and 366 electrically connects its source and gate electrodes to each other. Referring to gate segment 144, the drain and gate electrodes of gate diode 342 and the D / S electrode of protection switch 142 are coupled to each other, the source electrode of gate diode 342 is coupled to the drain and gate electrodes of gate diode 344, the source electrode of gate diode 344 is coupled to the drain and gate electrodes of gate diode 346, and the source electrode of gate diode 346 is coupled to node 222. Referring to source section 146, the drain electrode of gate diode 366 is coupled to node 222, the gate electrode and source electrode of gate diode 366 are coupled to the drain electrode of gate diode 364, the gate electrode and source electrode of gate diode 364 are coupled to the drain electrode of gate diode 362, and the gate electrode and source electrode of gate diode 362 are coupled to the S / D electrode of protection switch 142.

[0072] In one specific implementation, the coupling can be in the form of an electrical connection. For example, the drain and gate electrodes of gate diode 342, the D / S electrode of protection switch 142, and gate terminal 104 can be electrically connected to each other at gate node 204; the source electrode of gate diode 346, the drain electrode of gate diode 366, and the control electrode of protection switch 142 can be electrically connected to each other at node 222; and the gate and source electrodes of gate diode 362, the S / D electrode of protection switch 142, and source terminal 106 can be electrically connected to each other at source node 206.

[0073] In such Figure 3 In the illustrated embodiments, all transistor structures may be HEMTs. Power switch 122 and protection switch 142 are configured to act as transistors, and other transistor structures are configured to act as diodes, specifically gate diodes 342, 344, 346, 362, 364, and 366. Power switch 122 may occupy at least 75% or at least 80% of the active region of the electronic device. Protection circuit 140 may occupy at most 25% or at most 20% of the active region of the electronic device. In one embodiment, power switch 122 may occupy at most 90% of the active region of the electronic device, and protection circuit 140 may occupy at least 10% of the active region of the electronic device. The region coverage described in this paragraph is intended to be exemplary, and therefore the percentage of active region may be less than or greater than those described.

[0074] Different sizes of transistor structures Figures 3 to 5 The figures are drawn to show the relative dimensions of the transistor structure. Those skilled in the art will understand that for... Figures 3 to 5 The transistor structure in the protection circuit 140 has a uniform thickness for its substrate and capping layer. Therefore, after reading this specification, those skilled in the art will understand that different dimensions reflect different regions of the transistor structure (as seen from the top view). The power switch 122 is substantially larger than the transistor structure within the protection circuit 140. In one embodiment, the effective gate width of the protection switch 142 may be in the range of 10% to 20% of the effective gate width of the power switch 122. In another embodiment, the effective gate width of the transistor structure of each of the gate diodes 342, 344, 346, 362, 364, and 366 is in the range of 0.1% to 1.0% of the effective gate width of the power switch 122. In yet another embodiment, the effective gate width of the transistor structure within the protection circuit 140 may be outside this given range. The actual value of the effective gate width may depend on the amount of current flowing through the power switch 122 and the protection switch 142.

[0075] Used to form Figure 3 The layers of the transistor structures shown may be identical or nearly identical. While the following description pertains to HEMT structures, the concepts herein can be applied to other transistor structures that do not have a diode formed between the channel region and either or both of the doped source and drain regions, such as those utilizing silicon-based transistor technology. Below are some layers and materials that can be used in transistor structures.

[0076] like Figure 3 The illustrated transistor structure may include a substrate 410, a nucleation layer 420, a buffer layer 422, a channel layer 424, and a barrier layer 426. The substrate 410 may comprise silicon, sapphire (single-crystal Al₂O₃), silicon carbide (SiC), aluminum nitride (AlN), gallium oxide (Ga₂O₃), spinel (MgAl₂O₄), or another suitable substantially single-crystal material. In one embodiment, the substrate 410 may be a single-crystal silicon wafer or a single-crystal III-V wafer. The specific material and crystal orientation along the main surface may be selected depending on the composition of the overlay layer. In one embodiment, for... Figure 3 The substrate 410 of all the transistor structures shown is electrically connected to the source terminal 106.

[0077] Each of the nucleation layer 420, buffer layer 422, channel layer 424, and barrier layer 426 may comprise a III-N material, and in a specific embodiment may comprise Al. x Ga (1-x)N, where 0 ≤ x ≤ 1. In one embodiment, nucleation layer 420 may facilitate the transformation from the crystal matrix in substrate 410 to the crystal matrix of the capping layer. In one specific embodiment, nucleation layer 420 comprises AlN. The composition of buffer layer 422 may depend on the composition of channel layer 424. The composition of buffer layer 422 may vary with thickness such that the aluminum content is relatively higher closer to substrate 410 and the gallium content is relatively higher closer to channel layer 424. In one specific embodiment, the cation (metal atom) content in buffer layer 422 near substrate 410 may be 10 atomic% to 100 atomic% Al, with the remainder being Ga, and the cation content in buffer layer 422 near channel layer 424 may be 0 atomic% to 50 atomic% Al, with the remainder being Ga. Buffer layer 422 may have a thickness in the range of about 1 micrometer to 5 micrometers.

[0078] Channel layer 424 may contain Al y Ga (1-y) N, where 0 ≤ y ≤ 0.1, and has a thickness in the range of about 20 nm to 4000 nm. The channel layer 424 and the barrier layer 426 can form a heterojunction, wherein a two-dimensional electron gas (2DEG) can be formed. In one embodiment, the barrier layer 426 comprises a III-V material. In a specific embodiment, the barrier layer 426 may comprise Al. z Ga (1-z) N, where 0.02 ≤ z ≤ 0.5, and in another embodiment, 0.11 ≤ z ≤ 0.3. The barrier layer 426 may have a higher Al content than the channel layer 424. The barrier layer 426 may have a thickness in the range of about 2 nm to 40 nm. In another embodiment, the barrier layer 426 may have a thickness of at least 6 nm to better ensure that the barrier layer 426 is continuous above the channel layer 424. In another embodiment, the barrier layer 426 may have a thickness of up to 25 nm to maintain a relatively low on-state resistance.

[0079] Each of the channel layer 424 and the barrier layer 426 can be undoped or unintentionally doped. Unintentional doping can occur due to precursor reactions involved during the formation of layers 424 and 426. In one specific embodiment, when metal-organic chemical vapor deposition (MOCVD) is used to form the channel layer 424 and the barrier layer 426, the acceptor may contain carbon from the source gas (e.g., Ga(CH3)3). Therefore, as layers 424 and 426 grow, some carbon may become incorporated, and such carbon can lead to unintentional doping. The carbon content can be controlled by adjusting deposition conditions such as deposition temperature and flow rate. In one embodiment, each of the channel layer 424 and the barrier layer 426 has a carbon content greater than 0 and less than 1 × 10⁻⁶. 14 atoms / cm 3or less than 1×10 15 atoms / cm 3 The carrier impurity concentration, and in another embodiment, at most 1 × 10⁻⁶. 16 atoms / cm 3 In yet another implementation, the concentration of unintentionally doped carrier impurities is 1 × 10⁻⁶. 13 atoms / cm 3 Up to 1×10 16 atoms / cm 3 Within the range.

[0080] The layers covering the substrate 410 can be formed using epitaxial growth techniques, and therefore at least a portion of the channel layer 424, the barrier layer 426, and the buffer layer 422 can be single-crystal. In one embodiment, the layers covering the substrate 410 can be formed using metal-organic chemical vapor deposition. In another embodiment, different compositions of the nucleation layer 420 can be used, such as InAlGaN, InP, etc.

[0081] In one embodiment, the transistor structure of the power switch 122, the protection switch 142, and the gate diodes 342, 344, 346, 362, 364, and 366 can be an enhancement-type transistor. The gate structure may include gate electrodes comprising a p-type semiconductor material and may have the same semiconductor material as the channel layer 424. For example, the gate electrodes and channel layer 424 may comprise GaN, but these gate electrodes will have a higher doping concentration compared to the channel layer 424. In another embodiment, the gate structure may include a gate dielectric layer comprising a metal or metal alloy and gate electrodes. Each of the gate dielectric layer and gate electrodes may comprise one or more films. The metal or metal alloy gate electrodes are described in more detail relative to the drain and source electrodes.

[0082] One or more interconnect layers can be formed, wherein each interconnect layer includes a patterned interlayer dielectric (ILD) layer and a patterned conductive layer. For example... Figure 3As shown, power switch 122 may have five interconnect layers, and the transistor structure within protection circuit 140 may have three interconnect layers. Power switch 122 has more interconnect layers to allow the formation of a field plate that controls the electric field during normal operation of power switch 122. Power switch 122 may be a power transistor and, in one embodiment, has a rated voltage in the range of 50V to 650V. In another embodiment, this rated voltage may be higher or lower than the aforementioned value. Because protection circuit 140 is coupled to gate terminal 104 and source terminal 106 and is not electrically connected to drain terminal 102, the transistor structure in protection circuit 140 is exposed to a smaller voltage. Therefore, the transistor structure in protection circuit 140 does not require a field plate as complex as that of power switch 122.

[0083] Each ILD layer may be formed over the barrier layer 426 and may comprise a single film or multiple films. The single film or each of these films may comprise an oxide, nitride, or oxynitride. Each ILD layer may have a thickness in the range of 20 nm to 500 nm. Each conductive layer is formed over its corresponding ILD layer. The conductive layer may comprise a single film or multiple films. In one embodiment, the conductive layer may comprise an adhesive film and a barrier film. Such films may comprise Ta, TaSi, Ti, TiW, TiSi, TiN, etc. The conductive layer may also include a conductive body film. The body film may comprise Al, Cu, or another material that is more conductive than the other films within the conductive layer. In one embodiment, the body film may comprise at least 90% by weight of Al or Cu. The body film may have a thickness at least as thick as the other films within the conductive layer. In one embodiment, the thickness of the body film is in the range of 20 nm to 900 nm, and in a more specific embodiment, in the range of 50 nm to 500 nm. More or fewer films may be used in each ILD layer or each conductive layer.

[0084] In such Figure 3In the illustrated embodiment, power switch 122 includes a drain structure 1222, a gate structure 1224, and a source structure 1226. Protection switch 142 includes a D / S structure 1422, a gate structure 1424, and an S / D structure 1426. The transistor structure of each of gate diodes 342, 344, 346, 362, 364, and 366 includes a source structure, a gate structure, and a drain structure. Each of the drain, gate, source, D / S, and S / D structures includes one or more layers of patterned conductive layers, and within each structure (e.g., drain structure, source structure, etc.), the portion of the patterned conductive layer closest to the channel layer 424 is the electrode (e.g., drain electrode, source electrode, etc.) of its corresponding structure. All drain, gate, source, D / S, and S / D structures include a field plate, but in alternative embodiments, the field plate may not be used within protection circuit 140. In the figures, insulating layer 460 is a composite of patterned ILD layers.

[0085] Figure 4 This includes a cross-sectional view of a portion of the workpiece according to an alternative embodiment. Two additional transistors are added to protection circuit 140. Although protection circuit 140 has more components, the overall size of the protection circuit can be smaller because the gate diodes can be smaller. The gate segment of protection circuit 140 includes transistor 552 and gate diodes 542, 544, and 546, and the source segment of protection circuit 140 includes transistor 572 and gate diodes 562, 564, and 566.

[0086] Transistor 552 includes a drain electrode coupled to gate terminal 104 and a source electrode coupled to control electrode of protection switch 142. Transistor 572 includes a drain electrode coupled to control electrode of protection switch 142 and a source electrode coupled to source terminal 106. In one embodiment, the control electrode of protection switch 142, the source electrode of transistor 552, and the drain electrode of transistor 572 are electrically connected to each other at node 522.

[0087] Gate diodes 542, 544, and 546 have all the couplings and electrical connections as previously described with respect to gate diodes 342, 344, and 346, except that the source electrode of gate diode 546 is coupled to the gate electrode of transistor 552. Gate diodes 562, 564, and 566 have all the couplings and electrical connections as previously described with respect to gate diodes 362, 364, and 366, except that the drain electrode of gate diode 566 is coupled to the gate electrode of transistor 572.

[0088] Figure 5 Including relative to Figure 4 Another embodiment similar to the one shown and described. In Figure 5In this configuration, resistors 642 and 662 are coupled between their corresponding set of gate diodes and node 622. Resistors 642 and 662 contribute to stabilizing circuit protection operation in the quiescent state by providing additional current paths for leakage or turn-off current. Resistors 642 and 644 can have values ​​ranging from high kiloohms to hundreds of megohms. In one embodiment, one terminal of resistor 642 is coupled to the source electrode of gate diode 546 and the gate electrode of transistor 552, and the other terminal of resistor 642 is coupled to the control electrode of protection switch 142. One terminal of resistor 662 is coupled to the drain electrode of gate diode 566 and the gate electrode of transistor 572, and the other terminal of resistor 662 is coupled to the control electrode of protection switch 142. In one specific embodiment, one terminal of resistor 642, one terminal of resistor 662, the source electrode of transistor 562, the drain electrode of transistor 572, and the control electrode of protection switch 142 are electrically connected to each other at node 622.

[0089] In the implementation plan, such as Figures 2 to 5 As shown, when the protection circuit 140 is in a stable state and the gate-source current is relatively high (>0.01mA / mm), the V of the protection circuit 140 in the forward bias direction... TH V will be the V of each of the transistor structures between the protection switch 142 and the gate node and the control electrode of the protection switch 142. TH The sum of. See also Figure 2 and Figure 3 The protection circuit 140 protects V in the forward bias direction. TH The gate diodes 342, 344, and 346 will be connected to the protection switch 142 via V. TH The sum. The protection circuit 140's V in the reverse bias direction. TH V will be the V of each of all transistor structures between the source node and the control electrode of the protection switch 142 and the protection switch 142. TH The sum of the negatives. See also Figure 2 and Figure 3 The protection circuit 140 protects V in the reverse bias direction. TH The V values ​​for gate diodes 362, 364, 366, and protection switch 142 will be... TH The sum of the negatives. When the protection circuit 140 is in a steady state and the gate-source current is relatively low (<0.01mA / mm), the voltage at node 222 is close to zero and the protection circuit is not activated. When the protection circuit 140 is in a transient state, the voltage at node 222 is mainly controlled by the capacitive voltage divider between the gate section 144 and the source section 146. When the voltage at node 222 is at least V of the protection switch 142. TH At that time, protection circuit 140 is activated.

[0090] In one embodiment, each transistor structure within the power switch 122 and the protection circuit 140 may be designed to have substantially the same V0. TH Therefore, the protection circuit 140 can have a value that is essentially V. TH multiples of V TH For example, the power switch 122 may have a voltage of approximately 1.5V. TH Each of the gate diodes 342, 344, 346, 362, 364, 366 and the protective switch 142 may have a voltage of approximately 1.5V. TH Using this design, the V of the protection circuit 140 is protected. TH It can have a Vo of approximately 6.0V in the forward bias direction. TH And V at approximately -6.0V in the reverse bias direction TH In another embodiment, any one or more transistor structures within the protection circuit 140 may have a V0 equivalent to that of the power switch 122 or another transistor structure within the protection circuit 140. TH Significantly different V TH .

[0091] Figure 6 Including with Figure 3 The protection circuit 140 is similar to the protection circuit 740. Figure 6 The illustrated implementation includes gate diodes 742 and 762 in protection circuitry 740. Gate diodes 742 and 762 provide circuit protection in the steady state of the HEMT with a relatively low gate current source. These gate diodes allow a current path smaller than the resistance through the gate-source current path in protection switch 142. This should allow a voltage greater than 0V to build up at node 222. Figure 6 In this configuration, the forward bias current path (shown by arrow 752) includes gate diodes 342, 344, 346, and 742, and the reverse bias current path (shown by arrow 772) includes gate diodes 362, 364, 366, and 762. Gate diodes 742 and 762 can help form voltage dividers for the forward and reverse bias current paths. Each of gate diodes 742 and 762 can have a voltage rating compatible with the protection switch 142. TH Same, lower or higher V TH Gate diodes 342, 344, 346, and 742 are arranged along the forward bias current path, and gate diodes 362, 364, 366, and 762 are arranged along the reverse bias current path. When forward biased, the voltage at node 722 will be:

[0092] V 722 =VGS ×(R DG742 / (RDG 342 +R DG344 +R DG346 +R DG742 )),in:

[0093] V 722 The voltage at node 722, and

[0094] R DGxxx is the resistance through the gate diode xxx when the gate diode xxx is in its on state.

[0095] When reverse biased, the voltage at node 722 will be:

[0096] V 722 =V GS ×(R DG762 / (RDG 362 +R DG364 +R DG366 +R DG762 )).

[0097] Gate diode 742 includes a drain electrode and a gate electrode coupled to the electrode of protection switch 142, and a source electrode coupled to source terminal 106. Gate diode 762 includes a drain electrode coupled to gate terminal 104, and a gate electrode and a source electrode coupled to the control electrode of protection switch 142. In one embodiment, the gate and source electrodes of gate diode 762, the source electrode of gate diode 346, the drain and gate electrodes of gate diode 742, the drain electrode of gate diode 366, and the control electrode of protection switch 142 are electrically connected to each other at node 722. Figure 6 It also includes gate node 704 and source node 706, which respectively serve to connect gate node 204 and source node 206 (in... Figure 3 (The same purpose)

[0098] Figure 7 Including with Figure 4 The protection circuit 840 is similar to the protection circuit 140 in the circuit, and also includes protection circuits 140 and 840 respectively. Figure 6Gate diodes 842 and 862 are similar to gate diodes 742 and 762. Gate diode 842 includes a drain electrode and a gate electrode coupled to the control electrode of protection switch 142, and a source electrode coupled to the source terminal 106. Gate diode 862 includes a drain electrode coupled to the gate terminal 104, and a gate electrode and a source electrode coupled to the control electrode of protection switch 142. In one embodiment, the source electrode of transistor 552, the drain electrode and the gate electrode of gate diode 842, the gate electrode and the source electrode of gate diode 862, the drain electrode of transistor 572, and the control electrode of protection switch 142 are electrically connected to each other at node 822. Figure 7 It also includes gate node 804 and source node 806, which respectively serve to connect gate node 204 and source node 206 (in... Figure 3 (The same purpose)

[0099] The aforementioned circuit can be used to allow protection circuit 140 to operate at V. GS Significant deviation from V during normal operation of electronic devices GS The circuit is switched on at that time. This situation can occur during electrostatic discharge events or other similar overvoltage or undervoltage events. For example, electronic devices may have a voltage of 0V when power switch 122 is in the off state. GS Furthermore, it can be 5V when the power switch 122 is in the ON state. When the power switch 122 is turned on and off, due to voltage overshoot, V GS Under normal operating conditions, it can operate within a range of -2V to 5.5V. Therefore, the protection circuit 140 can be designed to ensure that when V... GS Within the range of -2V to 5.5V, the protection switch 142 does not conduct. In one specific implementation, when V GS Significantly higher than 5.5V and when V GS When the voltage drops significantly below -2V, the protection circuit 140 can be activated.

[0100] Figure 8 Including the drain current (I) of the protection switch 142 according to one embodiment DS ) with V GS A graph showing the changes. DS and V GS The axes intersect at 0A and 0V. When Vgs is at or near 0V, there is no significant current flowing through the protective switch 142. When V... GS When the voltage becomes sufficiently high, such as from about 6V to about 8V, the protection switch 142 turns on, and current flows from the gate terminal 104 through the protection switch 142 and to the source terminal 106. Unlike many conventional circuits, the protection circuit 140 also allows current to flow in reverse. When V GSWhen the voltage becomes sufficiently low, such as from about -6V to about -8V, the protection switch 142 turns on, and current flows from the source terminal 106 through the protection switch 142 and to the gate terminal 104. Therefore, the protection circuit 140 allows bidirectional current flow and can remain off during normal operation of the electronic device.

[0101] Corresponding to Figure 8 The implementation scheme shows a protection circuit 140 with symmetrical operation, that is, |V under forward bias conditions. TH |V under reverse bias conditions TH | Essentially the same. In another implementation, the forward bias |V TH |and reverse bias|V TH | Can be significantly different. For example, power switch 122 can withstand voltages as high as +8V or as low as -12V before a significant risk of damage to power switch 122 may occur. GS The protection circuit 140 can be designed to ensure that when V GS When the voltage is 6V or higher, the protection switch 142 is turned on in the forward bias direction, and when V GS When the voltage is -9V or lower, the protection switch is turned on in the reverse bias direction.

[0102] As previously mentioned, many different layouts can be used with the circuit. Several exemplary, non-limiting implementations are provided to demonstrate that a particular physical design can be selected based on the needs or expectations of a specific application. (Relative to...) Figure 3 The electronic components described herein illustrate these designs. After reading the entire specification, those skilled in the art will be able to adjust the components relative to the design. Figures 4 to 7 The design of the other protection circuits described herein and the electronic implementation scheme described herein.

[0103] Figure 9 Includes a top view of the electronic components to provide a better understanding of the location and dimensions of the power switch 122 and the protection circuit 140. The electronic components have a proximity to... Figure 9 The outermost side 982 at the top, the outermost side 984 opposite to and substantially parallel to the outermost side 982, and the side closest to it. Figure 9 The left peripheral side 986, and the peripheral side 988, which is opposite to and substantially parallel to the peripheral side 986. Sides 982 and 984 are substantially perpendicular to sides 986 and 988. Peripheral side 986 is closer to the power switch 122 than the protection circuit 140, and peripheral side 988 is closer to the protection circuit 140 than the power switch 122. The active region of the power switch 122 is located between the drain terminal 102 and the source terminal 106. The active region of the transistor structure within the protection circuit 140 is located between the drain terminal 102 and the gate channel 944.

[0104] The power switch 122 includes a drain electrode 922 electrically connected to the drain terminal 102, a gate electrode 924 electrically connected to the gate terminal 104 via a gate channel 944, and a source electrode 926 electrically connected to the source terminal 106. See also Figure 3 and Figure 9 A portion of the source terminal 106 extends over the protection circuit 140 and is electrically connected to the S / D electrode of the protection switch 142 and the source electrode of the gate diode 362. The gate interconnect 946 extends over the protection circuit 140 and is electrically connected to the D / S electrode of the protection switch 142, the drain electrode of the gate diode 342, and the gate channel 944. Details regarding the specific layout and electrical connections of the protection circuit 140 are provided later in this specification.

[0105] Figure 10 This includes the layout of alternative implementation schemes. In cases such as... Figure 10 In the illustrated embodiment, gate terminal 104 is pulled away from peripheral side 988, and protection circuitry 140 extends toward peripheral side 982. This arrangement allows protection switch 142 to be... Figure 9 The illustrated implementation dissipates charge more quickly. Therefore, Figure 10 The layout allows more current to flow through the power switch 122. Figure 11 Similar to Figure 10 However, the left gate terminal 104 ( Figure 10 The middle gate terminal (104) is removed. The right gate terminal 104 is retained.

[0106] Figures 12 to 14 A top view of a protection circuit 140 according to one embodiment. Figures 12 to 14 Compared to Figure 3 The components shown and described are explained. Figure 12 The diagram includes conductive members that form the drain and source electrodes corresponding to the transistor structure. Specifically, conductive member 1222 is the D / S electrode for protecting switch 142, and conductive member 1226 is the S / D electrode for protecting switch 142.

[0107] See Figure 3 and Figure 12 Conductive members 1242, 1244, 1246, and 1248 are associated with the gate segment of the protection circuit 140. Specifically, conductive member 1242 is the drain electrode of gate diode 342, conductive member 1244 is the source electrode of gate diode 342 and the drain electrode of gate diode 344, conductive member 1246 is the source electrode of gate diode 344 and the drain electrode of gate diode 346, and conductive member 1248 is the source electrode of gate diode 346.

[0108] See Figure 3 and Figure 12 Conductive members 1262, 1264, 1266, and 1268 are associated with the source segment of the protection circuit 140. Specifically, conductive member 1262 is the source electrode of gate diode 362, conductive member 1264 is the drain electrode of gate diode 362 and also the source of gate diode 364, conductive member 1266 is the drain electrode of gate diode 364 and also the source of gate diode 366, and conductive member 1268 is the drain electrode of gate diode 366.

[0109] Figure 13 The illustration includes conductive members that form the gate electrode corresponding to the transistor structure and interconnect to other portions of the protection circuit 140. Specifically, conductive member 1324 includes a gate electrode portion between conductive members 1222 and 1226, wherein the gate electrode portion is the gate electrode for protecting switch 142. Another portion of conductive member 1324 is a local interconnect that connects the gate electrode portions to each other and to conductive members 1248 and 1268, respectively, the source of gate diode 346 and the drain of gate diode 366.

[0110] See Figure 3 and Figure 13 Conductive members 1342, 1344, and 1346 are associated with the gate segment of the protection circuit 140. Specifically, conductive member 1342 is the gate electrode of gate diode 342 and contacts conductive member 1242, conductive member 1344 is the gate electrode of gate diode 344 and contacts conductive member 1244, and conductive member 1346 is the gate electrode of gate diode 346 and contacts conductive member 1246.

[0111] See Figure 3 and Figure 13 Conductive members 1362, 1364, and 1366 are associated with the source segment of protection circuit 140. Specifically, conductive member 1362 is the gate electrode of gate diode 362 and contacts conductive member 1262, conductive member 1364 is the gate electrode of gate diode 364 and contacts conductive member 1264, and conductive member 1366 is the gate electrode of gate diode 366 and contacts conductive member 1266.

[0112] Figure 14The illustration includes a view after the ILD layer has been formed and patterned to define contact openings, and subsequently the source terminal 106 and gate interconnect 946 have been formed. Contacts between the source terminal 106 and some of the conductive members below it, and contacts between the gate interconnect 946 and some of the conductive members below it, are shown as dots. In the embodiment shown, the gate interconnect 946 contacts conductive member 1222 (the D / S electrode of the protection switch 142) and conductive member 1242 (the drain electrode of the gate diode 342). The source terminal 106 contacts conductive member 1226 (the S / D electrode of the protection switch 142) and conductive member 1262 (the source electrode of the gate diode 362).

[0113] In a relatively comparative manner (compared to the alternative layouts described below), Figure 14 The layout in the middle is the easiest to implement. In, for example... Figure 14 In the layout shown, the conductive components are the drain electrode, D / S electrode, source electrode, S / D electrode, and gate electrode within the protection circuit 140, which are substantially parallel to the power switch 122. Figures 9 to 11 The drain electrode 922, gate electrode 924, and source electrode 926 are described. Figures 14 to 18 In the diagram, the contacts between the source terminal 106 and some of the components below it, and the contacts between the gate interconnect 946 and some of the components below it, are shown in dots.

[0114] Figures 15 to 18 An alternative embodiment of the layout of the protection circuit 140 is shown. (Compared to...) Figure 14 In comparison, each of them is relatively more complex; however, compared to Figure 14 Each of the layouts shown offers a performance difference. Figure 15 Having relative Figure 12 and Figure 13 The same conductive components are described above. The source terminal 106 and the gate interconnect 946 have different shapes that allow for lower resistance in the current path through the protection circuit 140.

[0115] Figures 16 to 18 This includes alternative implementations that modify the layout. The electrical characteristics in HEMTs sometimes exhibit a dependence on layout orientation. Therefore, Figure 16 , Figure 17 and Figure 18 The layout allows for different layout orientations in both the protected and protected circuit devices. This allows for different V... TH The values ​​are adjusted to achieve higher optimization for the protection circuit.

[0116] Figure 16This includes a layout in which portions of the conductive components are the drain electrode, D / S electrode, source electrode, S / D electrode, and gate electrode within the protection circuit 140, which are substantially perpendicular to the drain electrode 922, gate electrode 924, and source electrode 926 of the power switch 122. Figures 9 to 11 This layout simplifies the shape of the gate interconnect 946. Figure 17 The invention includes a layout in which conductive members are D / S electrodes, S / D electrodes, and gate electrodes within a protection switch 142, which are substantially perpendicular to the conductive members of the drain, gate, and source electrodes of the gate diode within the protection circuit. Figure 18 This design combines the advantages seen in the aforementioned layouts and includes a more complex layout of the gate diode within the protection circuitry 140. Figure 17 compared to, Figure 18 The layout in this configuration provides more active area for the protection switch 142 and less active area for the gate diode. (Compared to...) Figure 17 In comparison, for Figure 18 With this layout, the current flowing through the protection circuit 140 can be greater.

[0117] Upon reading the full text of this patent application, a person skilled in the art will understand that many other layouts of the electronic device are possible. These layouts can be customized to meet the needs or expectations of a particular application. Therefore, the layouts shown and described are to be considered exemplary.

[0118] The protection circuit may include a protection switch and other electronic components coupled to the control electrode of the protection switch. When the protection switch is turned on, essentially all the current flowing through the protection circuit flows through the protection switch. Therefore, the other electronic components can be significantly smaller than the protection switch.

[0119] The protection circuit can be designed to allow bidirectional current, enabling it to conduct at positive or negative voltages outside the normal operating range of the electronic device. The protection circuit helps dissipate charge from electrostatic events or other overvoltage or undervoltage events, which can cause the voltage difference between the terminals of the electronic device to become too high or too low. In one embodiment, the protection circuit does not require a resistor electrically connected to the control electrode of the protection switch and one of the terminals used for the protection circuit. In specific embodiments, protection circuits as described herein can be used; however, diodes or transistors can be used between such internal resistors and either the gate terminal 104 or the source terminal 106. The protection circuit can be customized to allow a specific voltage to turn it on. Many different layouts are available, and therefore, designers can determine a specific layout to meet the desired requirements of a particular application.

[0120] Protection circuits are ideal for protecting HEMTs or other non-silicon transistors. These protection circuits can be implemented for a wide range of power ratings (drain-to-source voltages) for electronic devices, such as from 50V to 650V or higher. In one implementation, the protection circuit can be implemented without adding any processing steps.

[0121] Many different aspects and embodiments are possible. Some of those aspects and embodiments are described below. Upon reading this specification, those skilled in the art will recognize that those aspects and embodiments are merely exemplary and do not limit the scope of the invention. Embodiments may be made according to any one or more of the embodiments listed below.

[0122] Implementation Scheme 1: An electronic device, the electronic device may include a source terminal, a gate terminal, and a protection circuit. The protection circuit may include: a gate segment, the gate segment including a first electrode and a second electrode, wherein the first electrode of the gate segment is coupled to the gate terminal; a source segment, the source segment including a first electrode and a second electrode, wherein the first electrode of the source segment is coupled to the source terminal; and a protection switch, the protection switch including a control electrode, a first current-carrying electrode coupled to the gate terminal, and a second current-carrying electrode coupled to the source terminal. The second electrode of the gate segment, the second electrode of the source segment, and the control electrode of the protection switch may be coupled to each other.

[0123] Implementation Scheme 2: The electronic device according to Implementation Scheme 1, wherein the gate segment includes a first diode having a cathode as a second electrode of the gate segment, and the source segment includes a second diode having a cathode as a second electrode of the source segment.

[0124] Implementation Scheme 3: The electronic device according to Implementation Scheme 2, wherein the cathode of the first diode, the cathode of the second diode, and the control electrode of the protection circuit are electrically connected at a node.

[0125] Implementation Scheme 4: The electronic device according to Implementation Scheme 2, wherein:

[0126] (1) The first diode includes a first gate diode, which includes a drain electrode, a gate electrode, and a source electrode, wherein the drain electrode and the gate electrode of the first gate diode are coupled to each other, and the source electrode of the first gate diode is coupled to the control electrode of the protection switch.

[0127] (2) The second diode includes a second gate diode, which includes a drain electrode, a gate electrode, and a source electrode, wherein the drain electrode of the second gate diode is coupled to the control electrode of the protection switch, and the gate electrode and the source electrode of the second gate diode are coupled to each other, or

[0128] (1) and (2) both.

[0129] Implementation Scheme 5: The electronic device according to Implementation Scheme 4, wherein the protective switch has an active region width in the range of 10 mm to 20 mm, and:

[0130] (1) The first gate diode has a first active region width in the range of 0.1 mm to 1.0 mm.

[0131] (2) The second gate diode has a second active region width in the range of 0.1 mm to 1.0 mm, or

[0132] (1) and (2) both.

[0133] Implementation Scheme 6: The electronic device according to Implementation Scheme 1, wherein:

[0134] (1) The gate segment includes: a first transistor, the first transistor including a drain electrode, a gate electrode and a source electrode; and a first diode, the first diode including a cathode and an anode, wherein the drain electrode of the first transistor, the anode of the first diode and the gate terminal are coupled to each other, the gate electrode of the first transistor is coupled to the cathode of the first diode, and the drain electrode of the first transistor is coupled to the control electrode of the protection switch.

[0135] (2) The source section includes: a second transistor, the second transistor including a drain electrode, a gate electrode, and a source electrode; and a second diode, the second diode including a cathode and an anode, wherein the drain electrode of the second transistor is coupled to the control electrode of the protection switch, the gate electrode of the second transistor is coupled to the cathode of the second diode, and the source electrode of the second transistor, the anode of the second diode, and the source terminal are coupled to each other, or

[0136] (1) and (2) both.

[0137] Implementation Scheme 7: The electronic device according to Implementation Scheme 6, wherein the protection circuit further includes:

[0138] (1) A first resistor having a first terminal coupled to the gate electrode of the first transistor and a second terminal coupled to the control electrode of the protection switch;

[0139] (2) A second resistor having a first terminal coupled to the gate electrode of the second component and a second terminal coupled to the control electrode of the protection switch; or

[0140] (1) and (2) both.

[0141] 8. The electronic device according to embodiment 6, wherein the protection circuit further comprises:

[0142] (1) A third gate diode, the third gate diode comprising a drain electrode, a gate electrode, and a source electrode, wherein the drain electrode of the third gate diode, the gate electrode of the third gate diode, and the control electrode of the protection switch are coupled to each other, and the source electrode of the third gate diode is coupled to the source terminal.

[0143] (2) A fourth gate diode, the fourth gate diode comprising a drain electrode, a gate electrode, and a source electrode, wherein the drain electrode of the second gate diode is coupled to the gate terminal, and the gate electrode of the second gate diode, the source electrode of the second gate diode, and the control electrode of the protection switch are coupled to each other, or

[0144] (1) and (2) both.

[0145] Implementation Scheme 9: The electronic device according to Implementation Scheme 1, wherein the protection circuit further includes:

[0146] (1) A first transistor, the first transistor including a drain electrode, a gate electrode and a source electrode, wherein the drain electrode of the first transistor, the gate electrode of the first transistor and the control electrode of the protection switch are electrically connected at a first node, and the source electrode and the source terminal of the first transistor are electrically connected at a second node.

[0147] (2) A second transistor, the second transistor comprising a drain electrode, a gate electrode, and a source electrode, wherein the drain electrode and the gate terminal of the second transistor are electrically connected at a third node; and the gate electrode, the source electrode, and the control electrode of the protection switch are electrically connected at a fourth node, or

[0148] (1) and (2) both.

[0149] Implementation Scheme 10: The electronic device according to Implementation Scheme 1, wherein the gate segment and the source segment have the same number of electronic components.

[0150] Implementation Scheme 11: The electronic device according to Implementation Scheme 1, wherein the gate segment and the source segment have different numbers of electronic components.

[0151] Implementation Scheme 12: The electronic device according to Implementation Scheme 1 further includes: a drain terminal; and a power switch, the power switch including a drain electrode coupled to the drain terminal, a gate electrode coupled to the gate terminal, and a source electrode coupled to the source terminal.

[0152] Implementation Scheme 13: The electronic device according to Implementation Scheme 12, wherein the power switch has V TH And the protection circuit is configured such that when V GS Greater than V TH The protection switch is turned on at that time.

[0153] Implementation Scheme 14: The electronic device according to Implementation Scheme 13, wherein the power switch has V GSMax And the protection circuit is configured such that the protection switch is in V GS Reaching V GSMax It was connected previously.

[0154] Implementation Scheme 15: The electronic device according to Implementation Scheme 13, wherein the power switch has V GSMin And in V GS Reaching V GSMin The previously mentioned protective switch is turned on.

[0155] Implementation Scheme 16: The electronic device according to Implementation Scheme 12, wherein the power switch occupies at least 75% of the active area of ​​the electronic device, and the protection circuit occupies at most 25% of the active area of ​​the electronic device.

[0156] Implementation Scheme 17: The electronic device according to Implementation Scheme 12, wherein the power switch, the protection switch, the first transistor structure in the gate section and the second transistor structure in the source section have threshold voltages that differ from each other by no more than 20%.

[0157] Implementation Scheme 18: The electronic device according to Implementation Scheme 12, wherein the power switch and all transistor structures within the protection circuit are high electron mobility transistors.

[0158] Implementation Scheme 19: The electronic device according to Implementation Scheme 12, wherein the power switch and all transistor structures within the protection circuit are enhancement-mode transistors.

[0159] Implementation Scheme 20: The electronic device according to Implementation Scheme 12, wherein, viewed from a top view, the following is true:

[0160] The electronic device has a first peripheral side, a second peripheral side, a third peripheral side, and a fourth peripheral side, wherein the first peripheral side is opposite to the second peripheral side, the third peripheral side is opposite to the fourth peripheral side, and the first and second peripheral sides are perpendicular to the third and fourth peripheral sides.

[0161] The drain terminal is closer to the first peripheral side than the second peripheral side.

[0162] The source extremum is closer to the second peripheral side than the first peripheral side.

[0163] The power switch is located between the source terminal and the drain terminal, and is closer to the third peripheral side than to the fourth peripheral side.

[0164] The protection circuit is located between the gate channel and the first peripheral side, and is closer to the fourth peripheral side than the third peripheral side.

[0165] Implementation Scheme 21: The electronic device according to Implementation Scheme 20, wherein, viewed from a top view, the drain terminal is disposed between the protection circuit and the first peripheral side.

[0166] It should be noted that not all activities described in the general description or examples above are required; some specific activities may not be necessary, and one or more additional activities may be performed in addition to those described. Furthermore, the order in which the activities are listed is not necessarily the order in which they are performed.

[0167] The beneficial effects, other advantages, and solutions to problems have been described above with respect to specific embodiments. However, these beneficial effects, advantages, solutions to problems, and any features that may lead to or make more apparent any beneficial effect, advantage, or solution should not be construed as critical, necessary, or essential features of any or all claims.

[0168] The description and illustrations of the embodiments described herein are intended to provide a general understanding of the structure of various embodiments. The description and illustrations are not intended to be an exhaustive and comprehensive description of all elements and features of devices and systems using the structures or methods described herein. Individual embodiments may also be provided in combination in a single embodiment; conversely, various features described in the context of a single embodiment for simplicity may also be provided individually or in any sub-combination. Furthermore, references to values ​​expressed as ranges include all values ​​within that range. Many other embodiments will be apparent only to those skilled in the art upon reading this specification. Other embodiments may be used and derived from this disclosure, such that structural substitutions, logical substitutions, or other changes can be made without departing from the scope of this disclosure. Therefore, this disclosure should be considered exemplary and not restrictive.

Claims

1. An electronic device, comprising: source terminal; Gate terminal; as well as Protection circuit, the protection circuit comprising: A gate segment, the gate segment including a first electrode, a second electrode and a first diode, wherein the first electrode of the gate segment is coupled to the gate terminal; A source segment, comprising a first electrode, a second electrode, and a second diode, wherein the first electrode of the source segment is coupled to the source terminal; and The protection switch has a protection transistor, the protection transistor including a control electrode, a first current-carrying electrode coupled to the gate terminal, and a second current-carrying electrode coupled to the source terminal. in: The anode of the first diode is electrically coupled to the first current-carrying electrode of the protection transistor, and the cathode of the first diode is electrically coupled to the second electrode of the gate segment. The anode of the second diode is electrically coupled to the second current-carrying electrode of the protection transistor, and the cathode of the second diode is electrically coupled to the second electrode of the source section. The second electrode of the gate segment, the second electrode of the source segment, and the control electrode of the protection transistor are coupled to each other.

2. The electronic device according to claim 1, wherein: (1) The first diode includes a first gate diode, which includes a drain electrode, a gate electrode, and a source electrode, wherein the drain electrode of the first gate diode and the gate electrode of the first gate diode are coupled to each other, or (2) The second diode includes a second gate diode, which includes a drain electrode, a gate electrode, and a source electrode, wherein the gate electrode and the source electrode of the second gate diode are coupled to each other, or (1) and (2) both.

3. The electronic device according to any one of claims 1 to 2, further comprising: Leaking extremes; as well as A power switch, the power switch including a drain electrode coupled to the drain terminal, a gate electrode coupled to the gate terminal, and a source electrode coupled to the source terminal.

4. The electronic device according to claim 3, wherein the power switch has a threshold voltage V TH And the protection circuit is configured such that the protection transistor is subjected to a gate-source voltage V GS Greater than the threshold voltage V TH Time conduction.

5. The electronic device of claim 4, wherein the power switch has a maximum recommended gate-source voltage V. GSMax And the protection circuit is configured such that the protection transistor is subjected to a gate-source voltage V GS To reach the maximum recommended gate-source voltage V GSMax It was connected previously.

6. The electronic device according to claim 3, wherein all transistor structures within the power switch and the protection circuit are high electron mobility transistors.

7. An electronic device, comprising: source terminal; Gate terminal; as well as Protection circuit, the protection circuit comprising: A gate segment, the gate segment including a first electrode and a second electrode, wherein the first electrode of the gate segment is coupled to the gate terminal; Source segment, the source segment including a first electrode and a second electrode, wherein the first electrode of the source segment is coupled to the source terminal; and The protection switch has a protection transistor, the protection transistor including a control electrode, a first current-carrying electrode coupled to the gate terminal, and a second current-carrying electrode coupled to the source terminal. in: The second electrode of the gate segment, the second electrode of the source segment, and the control electrode of the protection transistor are coupled to each other. in: (1) The gate segment includes: A first diode, the anode of which is electrically coupled to the first current-carrying electrode of the protection transistor; A first transistor, the first transistor including a drain electrode, a gate electrode, and a source electrode; and in: The drain electrode of the first transistor, the anode of the first diode, and the gate terminal are coupled to each other. The gate electrode of the first transistor is coupled to the cathode of the first diode; and The source electrode of the first transistor is coupled to the control electrode of the protection transistor, or (2) The source section includes: The second diode, the anode of which is electrically coupled to the second current-carrying electrode of the protection transistor; A second transistor, the second transistor including a drain electrode, a gate electrode, and a source electrode; and in: The drain electrode of the second transistor is coupled to the control electrode of the protection transistor. The gate electrode of the second transistor is coupled to the cathode of the second diode; and The source electrode of the second transistor, the anode of the second diode, and the source terminal are coupled to each other, or (1) and (2) both.

8. The electronic device according to claim 7, further comprising: Leaking extremes; as well as A power switch, the power switch including a drain electrode coupled to the drain terminal, a gate electrode coupled to the gate terminal, and a source electrode coupled to the source terminal.

9. The electronic device of claim 8, wherein the power switch has a threshold voltage V TH The protection circuit is configured such that the protection transistor is subjected to a gate-source voltage V. GS Greater than the threshold voltage V TH Time conduction.

10. The electronic device of claim 9, wherein the power switch has a maximum recommended gate-source voltage V. GSMax The protection circuit is configured such that the protection transistor is subjected to a gate-source voltage V. GS To reach the maximum recommended gate-source voltage V GSMax It was connected previously.

11. The electronic device according to claim 7, further comprising: Leaking extremes; as well as A power switch, comprising a drain electrode coupled to the drain terminal, a gate electrode coupled to the gate terminal, and a source electrode coupled to the source terminal. The power switch, the protection transistor, the first transistor structure in the gate section, and the second transistor structure in the source section have threshold voltages that differ from each other by no more than 20%.

12. The electronic device of claim 8, wherein all transistor structures within the power switch and the protection circuit are high electron mobility transistors.

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