Semiconductor silicon wafer cleaning device and cleaning method

Abstract

The present invention relates to a method for cleaning semiconductor silicon wafers, the method comprising: an ozone water treatment step after grinding, immersing the ground semiconductor silicon wafer in ozone water; a first ultrasonic ozone water treatment step, immersing in ozone water, and cleaning at room temperature while applying ultrasonic waves; and a second ultrasonic ozone water treatment step, after the first ultrasonic ozone water treatment step, performing a wafer rotation treatment of taking the semiconductor silicon wafer out of the ozone water and rotating it, immersing it in ozone water again, and cleaning at room temperature while applying ultrasonic waves, wherein the second ultrasonic ozone water treatment step is performed more than once, and a fluoric acid treatment step and an ozone water treatment step are performed. Thus, a semiconductor silicon wafer cleaning method and cleaning treatment device are provided, which can suppress the generation of protruding defects on the wafer surface or the deterioration of the surface roughness to improve the wafer quality, and can reduce costs compared with the prior art.

Description

Technical Field

[0001] The invention relates to a cleaning processing device and a cleaning method for semiconductor silicon wafers. Background Art

[0002] Currently, when batch cleaning (immersion cleaning) is performed on wafers that have just been ground and have abrasives attached to their surfaces, cleaning using SC1 (a mixed solution of ammonia water and hydrogen peroxide) is generally performed to remove organic matter or silica particles contained in the abrasives, and this is a necessary step.

[0003] Figure 2 This is a diagram showing an example of a conventional cleaning process for a semiconductor silicon wafer after polishing.

[0004] like Figure 2 As shown, in the existing cleaning process, after the polishing agent is removed from the ground wafer by SC1 and ultrasound, it is treated with pure water, and then the oxide film is removed by using fluoric acid to remove particles and metal contamination. After the oxide film is formed by re-oxidation using ozone water, it is treated with pure water and then dried.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Publication No. 2015-023069 Summary of the invention

[0008] 1. Technical issues to be resolved

[0009] However, SC1 is a chemical solution that is accompanied by anisotropic etching, and there may be problems such as generation of protrusion-shaped defects on the wafer surface and deterioration of surface roughness.

[0010] In addition, chemicals such as SC1 have a high environmental impact and require wastewater treatment or a temperature control mechanism, which leads to a problem of high costs.

[0011] On the other hand, a spin cleaning method is disclosed in which a neutral aqueous solution of a polymer having a molecular weight of 10,000 or less is supplied to a substrate to remove the polymer from the substrate, and cleaning is performed using a solution in which ozone is dissolved (Patent Document 1).

[0012] However, in the batch cleaning method, no method for solving the above-mentioned problems has been proposed.

[0013] The present invention is made to solve the above-mentioned problems, and its purpose is to provide a cleaning method and a cleaning processing device for semiconductor silicon wafers, which can suppress the generation of protrusion-shaped defects on the wafer surface or the deterioration of surface roughness in the existing semiconductor silicon wafer cleaning method, thereby improving the wafer quality.

[0014] Another object of the present invention is to provide a semiconductor silicon wafer cleaning method and cleaning apparatus that can reduce costs more than the prior art.

[0015] (II) Technical solution

[0016] In order to solve the above-mentioned problems, the present invention provides a method for cleaning a semiconductor silicon wafer, wherein the method for cleaning a polished semiconductor silicon wafer comprises:

[0017] an ozone water treatment step after grinding, immersing the ground semiconductor silicon wafer in ozone water;

[0018] A step of performing a first ultrasonic ozone water treatment, immersing the semiconductor silicon wafer in ozone water and cleaning it at room temperature while applying ultrasonic waves; and

[0019] a step of performing a second ultrasonic ozone water treatment, after which the first ultrasonic ozone water treatment step is followed by a wafer rotation process in which the semiconductor silicon wafer is taken out of the ozone water and rotated, and the semiconductor silicon wafer after the wafer rotation process is immersed in ozone water again and cleaned at room temperature while applying ultrasonic waves,

[0020] The second ultrasonic ozone water treatment step is performed more than once, and then a fluoric acid treatment step of immersing the semiconductor silicon wafer in fluoric acid and an ozone water treatment step of immersing the semiconductor silicon wafer after the fluoric acid treatment step in ozone water are performed.

[0021] According to such a semiconductor silicon wafer cleaning method, by rotating the wafer, the abrasive adhering not only to the wafer surface but also to the edge portion can be effectively removed, thereby improving the wafer quality.

[0022] In addition, since the cleaning is performed without etching the wafer, surface roughness and protrusion defects can be improved.

[0023] Furthermore, since the treatment can be performed at room temperature by using ozone water, the cost can be reduced.

[0024] In addition, in this case, when the step of performing the second ultrasonic ozone water treatment is performed n times, the rotation angle of the semiconductor silicon wafer in the wafer rotation process is set to 360° / (1+n).

[0025] If this cleaning method is used, not only the inner surface of the wafer but also the edge portion can be evenly exposed to the ultrasonic wave, which can further improve the wafer quality.

[0026] In addition, in this case, it is preferable that the step of performing the second ultrasonic ozone water treatment is performed twice.

[0027] With such a cleaning method, there is no decrease in productivity in the actual manufacturing steps.

[0028] In this case, it is preferable to include a pure water treatment step of immersing the semiconductor silicon wafer in pure water, and the pure water treatment step is performed at least before the fluoric acid treatment step.

[0029] Such a cleaning method can more reliably improve wafer quality.

[0030] In this case, it is preferable to recover and reuse the waste liquids of ozone water and pure water among the waste liquids generated in the above-mentioned steps.

[0031] According to such a cleaning method, waste liquid can be reused, thereby reducing costs.

[0032] In this case, it is preferable that the concentration of ozone water in the step using ozone water in the above-mentioned steps is set to 10 ppm or more.

[0033] Such a cleaning method can more reliably improve wafer quality.

[0034] In this case, the semiconductor silicon wafer after the polishing is preferably a semiconductor silicon wafer polished using silicon dioxide as a polishing agent.

[0035] If this is the cleaning method, then by performing the first and second ultrasonic ozone water treatment steps, not only organic matter but also silicon dioxide is removed. Afterwards, the natural oxide film is removed by fluoric acid treatment, thereby removing silicon dioxide and metal contamination, thereby being able to more reliably improve wafer quality.

[0036] In addition, the present invention provides a semiconductor silicon wafer cleaning processing device, which is used to clean the ground semiconductor silicon wafer, and is characterized by having:

[0037] A first ozone water tank, filled with ozone water, for immersing the ground semiconductor silicon wafer in the ozone water;

[0038] A fluoric acid tank filled with fluoric acid, used for immersing the semiconductor silicon wafer in the fluoric acid;

[0039] A second ozone water tank, filled with ozone water, used to immerse the semiconductor silicon wafer immersed in the fluoric acid in the ozone water;

[0040] an ozone water tank having an ultrasonic wave applying mechanism, for immersing the semiconductor silicon wafer in ozone water and cleaning it while applying ultrasonic waves; and

[0041] The wafer rotation processing mechanism is used to take the semiconductor silicon wafer out of the ozone water tank with the ultrasonic applying mechanism and rotate it.

[0042] With such a cleaning processing apparatus for semiconductor silicon wafers, the abrasive adhering not only to the wafer surface but also to the edge portion can be effectively removed by rotating the wafer, thereby improving the wafer quality.

[0043] In addition, since cleaning can be performed without etching the wafer, surface roughness and protrusion defects can be improved.

[0044] Furthermore, since the treatment can be performed at room temperature by using ozone water, the cost can be reduced.

[0045] In this case, it is preferred that the concentration of the ozone water filled in the ozone water tank be 10 ppm or more.

[0046] Such a cleaning apparatus for semiconductor silicon wafers can more reliably improve wafer quality.

[0047] (III) Beneficial effects

[0048] According to the semiconductor silicon wafer cleaning method and cleaning processing apparatus of the present invention, by rotating the wafer, the abrasive adhering not only to the wafer surface but also to the edge portion can be effectively removed, thereby improving the wafer quality.

[0049] In addition, since cleaning can be performed without etching the wafer, surface roughness and protrusion defects can be improved.

[0050] Furthermore, since the treatment can be performed at room temperature by using ozone water, the cost can be reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1 This is a diagram showing an example of a cleaning flow of a semiconductor silicon wafer after polishing according to the present invention.

[0052] Figure 2 This is a diagram showing an example of a conventional cleaning process for a semiconductor silicon wafer after polishing.

[0053] Figure 3This is a flow chart showing a case where the step of performing the second ultrasonic ozone water treatment is repeated twice according to the present invention.

[0054] Figure 4 This is a diagram showing the rotation angle of the semiconductor silicon wafer when the step of performing the second ultrasonic ozone water treatment is repeated twice according to the present invention.

[0055] Figure 5 It is a graph showing the haze and the number of protrusion-shaped defects of the semiconductor silicon wafer after cleaning in the comparative example and the example.

[0056] Figure 6 This is a diagram showing an example of a semiconductor silicon wafer cleaning processing apparatus according to the present invention. DETAILED DESCRIPTION

[0057] In order to solve the above-mentioned problem, the inventors of the present invention have repeatedly conducted careful research and found that instead of using an alkaline solution such as SC1, a solution that does not involve silicon etching can be used to clean the wafer that has just been polished and is completely covered with abrasives at room temperature and below pH = 7.0, thereby reducing defects on the wafer and preventing deterioration of surface roughness.

[0058] In addition, the inventors have found that, instead of SC1, a cleaning method combining ozone water and ultrasonic waves (ultrasonic ozone water treatment) is used as a method for removing abrasives, and ozone water treatment is performed multiple times while changing the wafer rotation angle and applying ultrasonic waves, thereby achieving surface quality superior to that of the prior art.

[0059] Furthermore, the present inventors have found that ultrasonic ozone water treatment enables room temperature treatment and reuse of waste water, thereby enabling cost reduction, and have completed the present invention.

[0060] Hereinafter, the present invention will be described in detail, but the present invention is not limited thereto.

[0061] First, a semiconductor silicon wafer cleaning apparatus according to the present invention will be described.

[0062] The semiconductor silicon wafer cleaning processing device of the present invention is used to clean the ground semiconductor silicon wafer, and is characterized by comprising: a first ozone water tank filled with ozone water, used to immerse the ground semiconductor silicon wafer in ozone water; a fluoric acid tank filled with fluoric acid, used to immerse the semiconductor silicon wafer in fluoric acid; a second ozone water tank filled with ozone water, used to immerse the semiconductor silicon wafer immersed in the fluoric acid in ozone water; an ozone water tank with an ultrasonic applying mechanism, used to immerse the semiconductor silicon wafer in ozone water and clean it while applying ultrasonic waves; and a wafer rotation processing mechanism, used to take the semiconductor silicon wafer out of the ozone water tank with the ultrasonic applying mechanism and rotate it.

[0063] Figure 6 This is a diagram showing an example of a semiconductor silicon wafer cleaning processing apparatus according to the present invention.

[0064] In the semiconductor silicon wafer cleaning apparatus 1 , the first ozone water tank 2 is filled with ozone water, and the semiconductor silicon wafer W with abrasives attached to the entire surface immediately after polishing is immersed in the ozone water tank 2 , thereby removing the abrasives through ozone water treatment and forming an oxide film on the surface of the semiconductor silicon wafer.

[0065] The ozone water tank 3 having an ultrasonic wave applying mechanism can immerse the vertically placed semiconductor silicon wafer W in ozone water. In addition, since the ozone water tank has an ultrasonic wave applying mechanism for applying ultrasonic waves to the ozone water tank, the semiconductor silicon wafer can be immersed in ozone water while applying ultrasonic waves.

[0066] The semiconductor silicon wafer W immersed in ozone water while being applied with ultrasonic waves is taken out from the ozone water tank 3 having the ultrasonic wave applying mechanism by the wafer rotating processing mechanism 4, rotated, and then transferred to the next tank. In addition, here, there are multiple ozone water tanks 3 having the ultrasonic wave applying mechanism, and the tank to be immersed is changed each time the semiconductor silicon wafer W is rotated, but it can also be immersed in the same tank.

[0067] The wafer rotation processing mechanism 4 can rotate the semiconductor silicon wafer W by a predetermined rotation angle with the center of the wafer surface of the semiconductor silicon wafer W as the rotation center.

[0068] The fluoric acid tank 5 is filled with fluoric acid, and the semiconductor silicon wafer W is immersed in the fluoric acid. The oxide film is removed by the fluoric acid to remove particles and metal contamination.

[0069] The second ozone water tank 6 is filled with ozone water, and the semiconductor silicon wafer W immersed in perfluoric acid is immersed in the ozone water, so that a natural oxide film is formed by the ozone water, thereby completing the surface state.

[0070] With such a cleaning processing apparatus for semiconductor silicon wafers, the abrasive adhering not only to the wafer surface but also to the edge portion can be effectively removed by rotating the wafer, thereby improving the wafer quality.

[0071] In addition, cleaning can be performed without etching the semiconductor silicon wafer, and surface roughness and protrusion defects can be improved.

[0072] Furthermore, since the treatment can be performed at room temperature by using ozone water, the cost can be reduced.

[0073] In addition, it is preferable that the concentration of the ozone water filled in the ozone water tank of the semiconductor cleaning processing apparatus is 10 ppm or more.

[0074] Such a cleaning apparatus for semiconductor silicon wafers can more reliably improve wafer quality.

[0075] Next, the semiconductor silicon wafer cleaning method of the present invention is described.

[0076] The semiconductor silicon wafer cleaning method of the present invention is used to clean the ground semiconductor silicon wafer, and is characterized in that it includes: an ozone water treatment step after grinding, immersing the ground semiconductor silicon wafer in ozone water; a first ultrasonic ozone water treatment step, immersing the semiconductor silicon wafer in ozone water, and cleaning it at room temperature while applying ultrasonic waves; and a second ultrasonic ozone water treatment step, after the first ultrasonic ozone water treatment step, performing a wafer rotation treatment of taking the semiconductor silicon wafer out of the ozone water and rotating it, immersing the semiconductor silicon wafer after the wafer rotation treatment in ozone water again, and cleaning it at room temperature while applying ultrasonic waves, wherein the second ultrasonic ozone water treatment step is performed more than once, and then a fluoric acid treatment step of immersing the semiconductor silicon wafer in fluoric acid and an ozone water treatment step of immersing the semiconductor silicon wafer after the fluoric acid treatment step in ozone water are performed.

[0077] According to such a semiconductor silicon wafer cleaning method, by rotating the wafer, the abrasive adhering not only to the wafer surface but also to the edge portion can be effectively removed, thereby improving the wafer quality.

[0078] In addition, since the cleaning is performed without etching the wafer, surface roughness and protrusion defects can be improved.

[0079] Furthermore, since the treatment can be performed at room temperature by using ozone water, the cost can be reduced.

[0080] Figure 1 This is a diagram showing an example of a cleaning flow of a semiconductor silicon wafer after polishing according to the present invention.

[0081] like Figure 1 As shown, after the semiconductor silicon wafer that has just been ground and has abrasives attached to its entire surface is immersed in ozone water for ozone water treatment to form an oxide film (ozone water treatment step after grinding), ozone water treatment (ultrasonic ozone water treatment) with ultrasonic waves applied at room temperature (step of performing the first ultrasonic ozone water treatment) is performed, and [wafer rotation treatment → ultrasonic ozone water treatment] (step of performing the second ultrasonic ozone water treatment) is performed more than once for cleaning. After that, a fluoric acid treatment step and an ozone water treatment step are performed. In addition, a pure water treatment step before the fluoric acid treatment step, a pure water treatment step after the ozone water treatment step, and a drying treatment can be performed.

[0082] In the wafer rotation process, the semiconductor silicon wafer is first taken out from the ozone water tank having an ultrasonic wave applying mechanism, rotated to a predetermined rotation angle, and then transferred to the next tank.

[0083] Although the wafer quality can be improved as the number of repetitions of the second ultrasonic ozone water treatment step increases, if it is performed twice, it will not cause a decrease in productivity in the actual manufacturing steps. Therefore, it is expected that the second ultrasonic ozone water treatment step is performed twice.

[0084] Regarding the rotation angle of the wafer, when the 6 o'clock direction of the wafer placed vertically in the ozone water tank having the ultrasonic applying mechanism is set to 0°, the wafer can be rotated by a predetermined rotation angle.

[0085] In addition, if the step of performing the second ultrasonic ozone water treatment is performed n times, it is desirable that the rotation angle of the wafer once be an angle represented by 360° / (1+n).

[0086] Figure 3 This is a flow chart showing the case where the step of performing the second ultrasonic ozone water treatment is repeated twice according to the present invention. Figure 4 This is a diagram showing the rotation angle of the semiconductor silicon wafer when the second ultrasonic ozone water treatment step is repeated twice according to the present invention.

[0087] like Figure 3 As shown, after the ultrasonic ozone water treatment (the step of performing the first ultrasonic ozone water treatment), the wafer is rotated, and then transported to the next ozone water tank with an ultrasonic applying mechanism, and ultrasonic ozone water treatment is performed again (the step of performing the second ultrasonic ozone water treatment). After that, the wafer is rotated, and further transported to the next ozone water tank with an ultrasonic applying mechanism, and ultrasonic ozone water treatment is performed (the step of performing the second ultrasonic ozone water treatment for the second time).

[0088] In addition, when the second ultrasonic ozone water treatment step is repeated twice, Figure 3 , 4 As shown, the rotation angle of the wafer in one rotation process can be set to 360° / (1+2)=120°.

[0089] By repeating the step of performing the second ultrasonic ozone water treatment, not only the in-plane but also the edge portion of the wafer can be uniformly exposed to ultrasonic waves, and the wafer quality can be further improved.

[0090] In addition, it is preferred that the ground semiconductor silicon wafer be a semiconductor silicon wafer ground using silicon dioxide as an abrasive. In this way, organic matter can be completely decomposed and removed by ultrasonic ozone water treatment, and silicon dioxide can also be removed to a certain extent. After that, the natural oxide film is removed by fluoric acid treatment, thereby removing silicon dioxide and metal contamination, and finally the natural oxide film is formed by ozone water to complete the surface state.

[0091] In addition, it is preferred to have a pure water treatment step of immersing the semiconductor silicon wafer in pure water, and the pure water treatment step is performed at least before the fluoric acid treatment step. In this way, the wafer quality can be more reliably improved. Of course, the pure water treatment is not limited to this, and can also be performed between the steps or before and after the steps.

[0092] In addition, it is preferred to recover and reuse the waste liquid of ozone water and pure water generated in the above-mentioned steps. In this way, since the waste liquid can be reused, the cost can be reduced.

[0093] In addition, in the above-mentioned steps, the concentration of ozone water in the step using ozone water is preferably set to 10 ppm or more. With such an ozone water concentration, a natural oxide film can be reliably formed, and the wafer quality can be more reliably improved.

[0094] Example

[0095] Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited to these Examples.

[0096] Using a wafer inspection apparatus SP5 manufactured by KLA-Tencor, the semiconductor silicon wafers after cleaning were measured for particles having a diameter of 19 nm or more, and the semiconductor silicon wafers in the following comparative examples and examples were evaluated.

[0097] (Example)

[0098] In such Figure 1 In the cleaning process shown, after the semiconductor silicon wafer with abrasive attached after grinding is subjected to ozone water treatment for 180 seconds to form an oxide film (ozone water treatment step), ultrasonic ozone water treatment with ultrasonic wave application for 180 seconds (first ultrasonic ozone water treatment step), and [wafer rotation treatment → 180 seconds ultrasonic ozone water treatment] (second ultrasonic ozone water treatment step) is repeated twice for cleaning. After that, pure water treatment, 180 seconds of fluoric acid treatment step, 180 seconds of ozone water treatment step, pure water treatment and drying treatment are carried out in order. In addition, all steps in the embodiment are carried out at room temperature.

[0099] Since the step of performing the second ultrasonic ozone water treatment is repeated twice, the rotation angle of the semiconductor silicon wafer is set to 360 / (1+2)=120°.

[0100] In addition, in the embodiment, ozone water and pure water waste liquids generated in each step can be recovered and reused.

[0101] In each step of the Examples, the concentration of ozone water in the step using ozone water was set to 10 ppm or more. In addition, the concentration of fluoric acid in the fluoric acid cleaning solution in the fluoric acid treatment step was set to 1.0 mass %.

[0102] (Comparative Example)

[0103] In such Figure 2 In the cleaning process shown, after the polished wafer with the abrasive attached is subjected to pure water treatment, SC1 treatment with ultrasonic wave is performed for 180 seconds, followed by pure water treatment, fluoric acid treatment for 180 seconds, ozone water treatment for 180 seconds, pure water treatment and drying treatment. In the SC1 cleaning liquid used in the SC1 treatment, the mixing ratio of ammonia, hydrogen peroxide and ultrapure water is set to 1:1:10, and the temperature of the SC1 cleaning liquid is set to 80°C. In addition, the concentrations of ozone water and fluoric acid in the fluoric acid treatment and ozone water treatment are set to be the same as those in the embodiment.

[0104] Figure 5 It is a graph showing the haze and the number of protrusion-shaped defects of the semiconductor silicon wafer after cleaning in the comparative example and the example.

[0105] like Figure 5 As shown, in the example of cleaning under general cleaning conditions using SC1 (comparative example) and the example of cleaning using ozone water and ultrasonic waves (exemplary example), the haze and the number of protrusion-shaped defects in the exemplary embodiment were reduced and improved.

[0106] In addition, LLS (localized light scatterers) are also reduced and improved in the embodiment compared with the comparative example.

[0107] The present invention is not limited to the above-mentioned embodiments. The above-mentioned embodiments are examples, and any scheme having substantially the same structure and producing the same function and effect as the technical idea described in the claims of the present invention is included in the technical scope of the present invention.

Claims

1. A method for cleaning a semiconductor silicon wafer, wherein the method cleans a ground semiconductor silicon wafer, characterized in that: Include: an ozone water treatment step after grinding, immersing the ground semiconductor silicon wafer in ozone water; A step of performing a first ultrasonic ozone water treatment, immersing the semiconductor silicon wafer in ozone water and cleaning it at room temperature while applying ultrasonic waves; and a step of performing a second ultrasonic ozone water treatment, after which the first ultrasonic ozone water treatment step is followed by a wafer rotation process in which the semiconductor silicon wafer is taken out of the ozone water and rotated, and the semiconductor silicon wafer after the wafer rotation process is immersed in ozone water again and cleaned at room temperature while applying ultrasonic waves, The second ultrasonic ozone water treatment step is performed more than once, and then a fluoric acid treatment step of immersing the semiconductor silicon wafer in fluoric acid and an ozone water treatment step of immersing the semiconductor silicon wafer after the fluoric acid treatment step in ozone water are performed.

2. The semiconductor silicon wafer cleaning method according to claim 1, characterized in that: When the step of performing the second ultrasonic ozone water treatment is performed n times, the rotation angle of the semiconductor silicon wafer in the wafer rotation process is set to 360° / (1+n).

3. The semiconductor silicon wafer cleaning method according to claim 1, characterized in that: The step of performing the second ultrasonic ozone water treatment is performed twice.

4. The semiconductor silicon wafer cleaning method according to claim 1, characterized in that: A pure water treatment step is provided for immersing the semiconductor silicon wafer in pure water, and the pure water treatment step is performed at least before the fluoric acid treatment step.

5. The semiconductor silicon wafer cleaning method according to claim 4, characterized in that: The ozone water and pure water waste liquids generated in the above steps are recovered and reused.

6. The semiconductor silicon wafer cleaning method according to claim 1, characterized in that: In the above-mentioned steps, the concentration of ozone water in the step using ozone water is set to 10 ppm or more.

7. The method for cleaning a semiconductor silicon wafer according to any one of claims 1 to 6, characterized in that: The semiconductor silicon wafer after the polishing is defined as a semiconductor silicon wafer polished using silicon dioxide as a polishing agent.

8. A semiconductor silicon wafer cleaning device, which is used to clean ground semiconductor silicon wafers, characterized in that: have: A first ozone water tank, filled with ozone water, for immersing the ground semiconductor silicon wafer in the ozone water; A fluoric acid tank filled with fluoric acid, used for immersing the semiconductor silicon wafer in the fluoric acid; A second ozone water tank, filled with ozone water, used to immerse the semiconductor silicon wafer immersed in the fluoric acid in the ozone water; an ozone water tank having an ultrasonic wave applying mechanism, for immersing the semiconductor silicon wafer in ozone water and cleaning it while applying ultrasonic waves; and The wafer rotation processing mechanism is used to take the semiconductor silicon wafer out of the ozone water tank with the ultrasonic applying mechanism and rotate it.

9. The semiconductor silicon wafer cleaning device according to claim 8, characterized in that: The concentration of the ozone water filled in the ozone water tank is 10 ppm or more.

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