Substrate processing device, substrate processing method and storage medium

Abstract

The present invention provides a substrate processing device, a substrate processing method, and a storage medium that efficiently recover sublimates and improve the uniformity of the film thickness of the coating of the heat-treated object. A heat treatment device in one aspect of the present invention includes: a heat treatment unit that performs heat treatment on a substrate with a coating formed thereon; and a control unit that controls the heat treatment unit. The heat treatment unit includes: a heating portion that supports and heats the substrate; a chamber that covers the substrate supported by the heating portion; a gas release portion having a release head formed with a plurality of release holes, which releases gas from the plurality of release holes to the surface of the substrate, wherein the plurality of release holes are dispersedly arranged on the surface opposite to the substrate supported by the heating portion; a peripheral exhaust portion that exhausts the processing space in the chamber from the peripheral area outside the periphery of the substrate supported by the heating portion; and a central exhaust portion that exhausts the processing space from the central area inside the periphery of the substrate supported by the heating portion.

Description

Technical Field

[0001] The present invention relates to a substrate processing device, a substrate processing method and a storage medium. Background Art

[0002] Patent Document 1 discloses a heat treatment apparatus for heat-treating a coating film formed on a substrate. The heat treatment apparatus includes: a placement portion disposed within a processing container for placing the substrate; a heating portion for heating the substrate placed on the placement portion; and peripheral exhaust ports and a central exhaust port for exhausting the interior of the processing container.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2016-115919 Summary of the Invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a substrate processing device, a substrate processing method and a storage medium which can efficiently recover sublimates and improve the uniformity of the film thickness of a film of a heat treatment object.

[0008] Technical solutions to technical problems

[0009] A heat treatment apparatus according to one aspect of the present invention includes: a heat treatment unit for heat-treating a substrate having a film formed thereon; and a control unit for controlling the heat treatment unit. The heat treatment unit includes: a heating portion for supporting and heating the substrate; a chamber for housing the substrate supported by the heating portion; a gas release portion having a release head with a plurality of release holes formed therein, which releases gas from the plurality of release holes toward the surface of the substrate, wherein the plurality of release holes are dispersedly arranged on a surface opposite to the substrate supported by the heating portion; a peripheral exhaust portion for exhausting a processing space within the chamber from a peripheral region outside the periphery of the substrate supported by the heating portion; and a central exhaust portion for exhausting the processing space from a central region inside the periphery of the substrate supported by the heating portion.

[0010] Effects of the Invention

[0011] According to the present invention, a substrate processing apparatus, a substrate processing method, and a storage medium can be provided that can efficiently recover sublimates and improve the uniformity of the film thickness of a film to be heat-treated. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a schematic diagram showing an example of a substrate processing system according to the first embodiment.

[0013] Figure 2It is a schematic diagram showing an example of a coating and developing device.

[0014] Figure 3 It is a schematic diagram showing an example of a heat treatment unit.

[0015] Figure 4 It is a schematic diagram showing an example of a gas release portion.

[0016] Figure 5 This is a block diagram showing an example of the hardware configuration of the control device.

[0017] Figure 6 This is a flowchart showing an example of a substrate processing flow.

[0018] Figure 7 This is a flowchart showing an example of a heat treatment process.

[0019] Figure 8 (a)~ Figure 8 (c) is a schematic diagram showing an example of the operation of each component and the flow of gas in the heat treatment step.

[0020] Figure 9 (a)~ Figure 9 (c) is a schematic diagram showing an example of the operation of each component and the flow of gas in the heat treatment step.

[0021] Figure 10 It is a schematic diagram showing another example of the gas release portion.

[0022] Figure 11 It is a schematic diagram showing another example of the gas release portion.

[0023] Figure 12 (a) and Figure 12 (b) is a schematic diagram showing another example of the operation of each component in the heat treatment step.

[0024] Figure 13 This is a schematic diagram showing an example of a heat treatment unit included in the substrate processing system according to the second embodiment.

[0025] Figure 14 It is a schematic diagram showing an example of a gas release portion and a peripheral exhaust portion.

[0026] Figure 15 (a) and Figure 15 (b) is a schematic diagram showing an example of the operation of each component in the heat treatment step.

[0027] Figure 16 It is a side view schematically showing an example of details of the heating unit.

[0028] Figure 17 It is a plan view schematically showing an example of details of the heating unit.

[0029] Figure 18 (a) and Figure 18 (b) is a schematic diagram showing an example of a heating portion of a heat treatment unit according to a modified example.

[0030] Figure 19 It is a schematic diagram showing an example of a coating and developing device included in the substrate processing system according to the third embodiment.

[0031] Figure 20 This is a flowchart showing an example of a heat treatment process.

[0032] Figure 21 This is a graph showing an example of temporal changes in the oxygen concentration in the processing space.

[0033] Description of Reference Numerals

[0034] 1...substrate processing system; 2, 2B...coating and developing device; 20...heating part; 30...substrate lifting part; 40...chamber; 42...top plate; 48...chamber driving part; 50...gas release part; 52...release head; 54...release hole; 60...exhaust part; 70...peripheral exhaust part; 72...exhaust hole; 80...central exhaust part; 82...exhaust hole; 90...exhaust switching part; 100...control device; 70A...peripheral exhaust part; 174...second exhaust hole; 40A...chamber; 130...holding part; 140...cover; 142 top plate; g gap; 182...gap pin; 184...suction hole; 200...gas supply unit; U2, U20, U21, U22...heat treatment unit; W...wafer. DETAILED DESCRIPTION

[0035] Hereinafter, each exemplary embodiment will be described.

[0036] A substrate processing apparatus according to an exemplary embodiment includes: a heat treatment unit for performing heat treatment on a substrate having a film formed thereon; and a control unit for controlling the heat treatment unit. The heat treatment unit includes: a heating portion for supporting and heating the substrate; a chamber for housing the substrate supported by the heating portion; a gas release portion having a release head with a plurality of release holes formed therein, which releases gas from the plurality of release holes toward the surface of the substrate, wherein the plurality of release holes are dispersedly disposed on a surface opposite to the substrate supported by the heating portion; a peripheral exhaust portion for exhausting a processing space within the chamber from a peripheral region outside the periphery of the substrate supported by the heating portion; and a central exhaust portion for exhausting the processing space from a central region inside the periphery of the substrate supported by the heating portion.

[0037] In the heat treatment unit of the aforementioned substrate processing apparatus, a central exhaust section can be used to exhaust gas from the central area of ​​the substrate during heat treatment, thereby recovering sublimates from the coating. Furthermore, the gas release section releases gas onto the substrate surface, suppressing the upward flow associated with exhaust from the central area. This ensures that the effect of the gas flow on the coating thickness is uniform across the substrate surface. Consequently, sublimates can be efficiently recovered, and the thickness uniformity of the coating being heat treated can be improved.

[0038] Alternatively, the heat treatment unit further includes an exhaust switching portion for switching between a first state and a second state, wherein the first state exhausts the processing space from the peripheral exhaust portion, and the second state exhausts the processing space from at least the central exhaust portion. Alternatively, the control unit uses a gas release portion to release gas from a plurality of release holes, and controls the exhaust switching portion to switch from the first state to the second state. In the post-heating stage of the substrate to be processed, film formation is performed, and the effect of exhaust on the variation in film thickness is small. In the above-mentioned configuration, central exhaust can be performed in the post-heating stage. As a result, sublimates can be efficiently recovered, further improving the uniformity of the film thickness of the coating to be processed.

[0039] Alternatively, the heat treatment unit further includes: a substrate lifting unit for lifting and lowering the substrate; and an opening and closing switching unit that switches between a closed state in which the chamber forms a processing space and an open state in which the chamber is separated from the heating unit compared to the closed state. Alternatively, the chamber includes a top plate provided with a release head. Alternatively, the control unit controls the substrate lifting unit to cause the substrate to rise from the heating unit and approach the top plate, and controls the opening and closing switching unit to switch from the closed state to the open state after the substrate is brought close to the top plate. In this case, sublimates generated from the coating of the substrate in the state close to the top plate can be more reliably recovered. Therefore, contamination of the heat treatment unit caused by sublimates from the coating can be suppressed.

[0040] Alternatively, the peripheral exhaust portion may include peripheral exhaust holes for exhausting the processing space. Alternatively, the control unit may control the substrate lifting portion to raise the substrate to a position higher than the peripheral exhaust holes when the substrate is brought close to the top plate. In this case, when the substrate is brought close to the top plate, the airflow generated on the surface of the substrate due to exhaust based on the peripheral exhaust holes is weak. Therefore, the possibility of the sublimate flowing outside the substrate is reduced, and the sublimate can be recovered more efficiently.

[0041] Alternatively, the chamber may be configured to cover the substrate on the heating section with a connection portion formed in the outer peripheral region, connecting the processing space with the space outside the chamber. Alternatively, the outer peripheral exhaust portion may include an outer peripheral exhaust hole opening in the connection portion, and the processing space may be exhausted through the outer peripheral exhaust hole and the connection portion. In this case, leakage of sublimates into the space outside the chamber through the connection portion can be prevented.

[0042] Alternatively, the chamber includes a holding portion for holding the heating portion, and a cover portion, the cover portion being positioned with a gap formed between the holding portion and the holding portion so as to cover the substrate on the heating portion from above. Alternatively, the gap between the holding portion and the cover portion functions as the aforementioned communication portion. In this case, the chamber can be opened and closed without causing contact between components, thereby suppressing the generation of particles caused by opening and closing the chamber.

[0043] Alternatively, the heat treatment unit may sequentially perform heat treatment on a plurality of substrates, including the aforementioned substrate. Alternatively, the control unit may cause the gas release unit to continuously release gas from the plurality of release holes while the substrate being processed is being replaced. In this case, the ambient temperature change caused by the release of gas from the gas release unit is maintained substantially constant. Thus, the heat treatment results can be stabilized between substrates.

[0044] Alternatively, the central exhaust portion includes a central exhaust hole provided on the release head so as to open into the processing space. Alternatively, the gas release portion further includes a nozzle portion for releasing gas downward from the central exhaust hole. In this case, by releasing gas downward from the exhaust port of the nozzle portion, the amount of film thickness protrusion near the central exhaust hole can be suppressed. Consequently, film thickness uniformity within the substrate surface can be further improved.

[0045] Alternatively, the substrate processing apparatus may further include a gas supply unit that generates a regulated gas having a predetermined concentration of the one component by mixing a first gas containing one component with a second gas containing another component, and supplies the regulated gas to the gas release unit. Alternatively, the gas release unit releases the regulated gas as a gas onto the surface of the substrate. Alternatively, the gas supply unit may be located in a separate space from the space containing the thermal treatment unit. In this case, the effects of heat generated during the thermal treatment on the components used to generate the regulated gas can be reduced.

[0046] Alternatively, the control unit may cause the gas release unit to release the conditioned gas at least in the first half of the period in which the heating unit heats the substrate. Film formation is performed during the first half of the period in which the substrate is heated, thereby enabling more reliable adjustment of the quality of the film formed using the conditioned gas.

[0047] Alternatively, the heating unit may include: a heat plate that generates heat for heating the substrate; a plurality of gap pins disposed on the main surface of the heat plate to support the substrate by forming a gap between the substrate and the main surface; and suction holes opened in the main surface to attract the substrate arranged on the plurality of gap pins. Alternatively, the plurality of gap pins may include: a first group of gap pins arranged in a suction region of the main surface near the suction holes; and a second group of gap pins arranged in a non-suction region of the main surface outside the suction region. Alternatively, the number of gap pins of the first group per unit area in the suction region may be greater than the number of gap pins of the second group per unit area in the non-suction region. Because the suction force from the suction holes is greater in the suction region, the load applied to a single gap pin tends to increase due to stress generated within the substrate. In the above configuration, by increasing the number of gap pins of the first group per unit area in the suction region, an increase in the load applied to a single gap pin can be suppressed.

[0048] Alternatively, the substrate processing apparatus may include a plurality of heat treatment units including a heat treatment unit. Alternatively, the heating portion may include: a heat plate that generates heat for heating the substrate; a plurality of gap pins disposed on a main surface of the heat plate that support the substrate by forming a gap between the substrate and the main surface; and suction holes opened in the main surface that suction the substrate disposed on the plurality of gap pins. Alternatively, the plurality of heat treatment units may include a first heat treatment unit and a second heat treatment unit. Alternatively, the heating temperature of the substrate during heat treatment performed by the first heat treatment unit may be higher than the heating temperature of the substrate during heat treatment performed by the second heat treatment unit. Alternatively, the number of gap pins included in the heating portion of the first heat treatment unit may be greater than the number of gap pins included in the heating portion of the second heat treatment unit. When the heating temperature of the substrate during heat treatment is high, the load applied to a single gap pin tends to increase due to stress generated within the substrate due to thermal expansion of the substrate. In the above configuration, by increasing the number of gap pins included in the heating portion of the first heat treatment unit that performs heat treatment at a high heating temperature, it is possible to suppress an increase in the load applied to one gap pin.

[0049] The substrate processing apparatus may include multiple heat treatment units including a heat treatment unit. The heating unit may include: a heat plate that generates heat for heating the substrate; multiple gap pins disposed on a main surface of the heat plate that support the substrate by forming a gap between the substrate and the main surface; and suction holes opened in the main surface that suction the substrates disposed on the multiple gap pins. The multiple heat treatment units may include a first heat treatment unit and a second heat treatment unit. The suction force applied to the substrate from the suction holes of the first heat treatment unit may be greater than the suction force applied to the substrate from the suction holes of the second heat treatment unit. The heating unit of the first heat treatment unit may include a greater number of gap pins than the heating unit of the second heat treatment unit. When the suction force from the suction holes is high, the load applied to each gap pin tends to increase due to stress generated within the substrate. In this configuration, by increasing the number of gap pins in the heating unit of the first heat treatment unit, which performs heat treatment under high suction force, the increase in the load applied to each gap pin can be suppressed.

[0050] A substrate processing method according to an exemplary embodiment includes a step of heat-treating a substrate having a film formed thereon. The heat-treating step includes: supporting the substrate, which is enclosed by a chamber, in a heating unit and heating it; exhausting the processing space within the chamber from an outer peripheral region outside the periphery of the substrate supported by the heating unit; exhausting the processing space from a central region inside the periphery of the substrate supported by the heating unit; and releasing gas onto the surface of the substrate from a plurality of release holes dispersedly disposed on the surface opposite the substrate supported by the heating unit. In this case, similar to the aforementioned substrate processing apparatus, sublimates can be efficiently recovered and the film thickness uniformity of the film being heat-treated can be improved.

[0051] Alternatively, the step of heat-treating the substrate further includes releasing gas from the plurality of release holes onto the surface of the substrate, and switching from a first state in which the processing space is evacuated from the peripheral region to a second state in which the processing space is evacuated from at least the central region. In this case, similar to the aforementioned substrate processing apparatus, sublimates can be efficiently recovered, and the film thickness uniformity of the film being heat-treated can be further improved.

[0052] Alternatively, the step of heat-treating the substrate further includes: raising the substrate from the heating unit and bringing it close to the chamber ceiling; and, after the substrate is brought close to the ceiling, switching the chamber from a closed state, in which the processing space is formed, to an open state, in which the chamber is further away from the heating unit than in the closed state. In this case, similar to the above-described substrate processing apparatus, contamination of the heat treatment unit by sublimates from the coating can be suppressed.

[0053] Alternatively, the processing space may be evacuated from the peripheral region, including evacuating the processing space through peripheral exhaust holes. Alternatively, the substrate may be brought close to the top plate, including raising the substrate to a position higher than the peripheral exhaust holes. In this case, as with the aforementioned substrate processing apparatus, sublimates can be recovered more efficiently.

[0054] The substrate processing method may include a step of sequentially performing heat treatment on a plurality of substrates including the substrate. Alternatively, the step of sequentially performing heat treatment on the plurality of substrates includes continuously releasing gas from the plurality of release holes while the substrate to be processed is being replaced. In this case, similar to the substrate processing apparatus described above, the heat treatment results can be stabilized between substrates.

[0055] Alternatively, exhausting the processing space from the central region may further include exhausting gas from the processing space through a central exhaust hole provided in a discharge head having a plurality of discharge holes, and releasing gas from the nozzle portion toward a portion below the central exhaust hole. In this case, similar to the above-described substrate processing apparatus, film thickness uniformity can be further improved across the substrate surface.

[0056] A storage medium according to an exemplary embodiment is a computer-readable storage medium having recorded thereon a program for causing an apparatus to execute the above-described substrate processing method.

[0057] Hereinafter, an embodiment will be described with reference to the accompanying drawings. In the description, the same reference numerals are given to the same structures or structures having the same functions, and repeated descriptions are omitted.

[0058] [First embodiment]

[0059] First, refer to Figures 1 to 12 , a substrate processing system according to a first embodiment is described. Figure 1 The substrate processing system 1 shown is a system for forming a photosensitive coating on a substrate, exposing the photosensitive coating, and developing the photosensitive coating. The substrate to be processed is, for example, a semiconductor wafer W. The photosensitive coating is, for example, a resist film. The substrate processing system 1 includes a coating and developing device 2 and an exposure device 3. The exposure device 3 is a device for exposing the resist film (photosensitive coating) formed on the wafer W (substrate). Specifically, the exposure device 3 irradiates the exposure target portion of the resist film with energy rays by a method such as liquid immersion exposure. The coating and developing device 2 applies a resist (chemical solution) to the surface of the wafer W on which the lower film is formed to form a resist film before the exposure process performed by the exposure device 3, and performs a development process on the resist film after the exposure process.

[0060] [Substrate processing device]

[0061] Next, the structure of the coating and developing device 2 will be described as an example of a substrate processing device. Figure 1 and Figure 2 As shown, the coating and developing device 2 includes a carrier block 4, a processing block 5, an interface block 6 and a control unit 100 (control unit).

[0062] The carrier block 4 introduces wafers W into the coating and developing apparatus 2 and removes wafers W from the coating and developing apparatus 2. For example, the carrier block 4 can support multiple carriers C for wafers W and includes a built-in conveying device A1 including a transfer arm. The carriers C accommodate, for example, multiple round wafers W. The transfer arm A1 removes wafers W from the carriers C and delivers them to the processing block 5. It then receives wafers W from the processing block 5 and returns them to the carriers C. The processing block 5 includes multiple processing modules 11, 12, 13, and 14.

[0063] The processing module 11 is equipped with a coating unit U1, a heat treatment unit U2, and a conveying device A3 for conveying wafer W to the above-mentioned units. The processing module 11 forms a lower film on the surface of the wafer W using the coating unit U1 and the heat treatment unit U2. The coating unit U1 applies a treatment liquid for forming the lower film to the wafer W. The heat treatment unit U2 performs various heat treatments accompanying the formation of the lower film. In other words, the heat treatment unit U2 performs heat treatment on the wafer W on which the film of the treatment liquid is formed. Thus, the lower film is formed on the surface of the wafer W. As a specific example of the lower film, a so-called hard mask such as a spin-on coating (SOC) film can be cited. When the wafer W on which the film is formed is heated during the heat treatment, sublimates (waste) are generated from the film. Therefore, an exhaust portion for discharging the sublimates is provided in the heat treatment unit U2.

[0064] The processing module 12 houses a coating unit U3, a thermal treatment unit U4, and a transport device A3 for transporting wafers W to these units. The processing module 12 uses the coating unit U3 and thermal treatment unit U4 to form a resist film on the underlying film. The coating unit U3 applies a processing solution for resist film formation to the underlying film. The thermal treatment unit U4 performs various thermal processes associated with film formation.

[0065] The processing module 13 houses a coating unit U5, a thermal treatment unit U6, and a transport device A3 for transporting wafers W to these units. The processing module 13 uses the coating unit U5 and thermal treatment unit U6 to form an upper film on the resist film. The coating unit U5 applies a liquid for forming the upper film to the resist film. The thermal treatment unit U6 performs various thermal processes associated with the formation of the upper film.

[0066] The processing module 14 houses a developing unit U7, a thermal treatment unit U8, and a transport device A3 for transporting wafers W to these units. The processing module 14 uses the developing unit U7 and thermal treatment unit U8 to develop the exposed resist film and perform accompanying thermal treatment. The developing unit U7 applies a developer to the surface of the exposed wafer W and then rinses it with a rinse solution, thereby developing the resist film. The thermal treatment unit U8 performs various thermal treatments accompanying the development process. Specific examples of thermal treatment include a pre-development heat treatment (PEB: Post Exposure Bake) and a post-development heat treatment (PB: Post Bake).

[0067] A shelf unit U10 is located on the carrier block 4 side of the processing block 5. Shelf unit U10 is divided into multiple compartments arranged vertically side by side. A transport device A7, including a lifting arm, is located near shelf unit U10. Transport device A7 lifts wafers W between the compartments of shelf unit U10.

[0068] A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is divided into a plurality of small chambers arranged side by side in the vertical direction.

[0069] The interface block 6 transfers substrates W between the interface block 6 and the exposure unit 3. For example, the interface block 6 includes a transfer device A8 including a transfer arm, which is connected to the exposure unit 3. The transfer device A8 transfers wafers W placed on the shelf unit U11 to the exposure unit 3. The transfer device A8 receives wafers W from the exposure unit 3 and returns them to the shelf unit U11.

[0070] The specific structure of the substrate processing apparatus is not limited to the coating and developing apparatus 2 exemplified above. The substrate processing apparatus may be any apparatus as long as it includes a heat treatment unit for heat-treating a coating such as an underlayer film and a control device capable of controlling the heat treatment unit.

[0071] (Heat treatment unit)

[0072] Below, refer to Figure 3 and Figure 4 , an example of the heat treatment unit U2 of the processing module 11 is described in detail. Figure 3 As shown, the heat treatment unit U2 has a heating part 20, a substrate lifting part 30, a chamber 40 and an exhaust part 60. Figure 3 In the figure, except for a part of the structure, hatching indicating the cross section is omitted.

[0073] The heating unit 20 supports and heats the wafer W. The heating unit 20 includes, for example, a hot plate 22 and a hot plate heater 24. The hot plate 22 supports the wafer W to be heat-treated and transfers heat to the supported wafer W. The hot plate heater 24 raises the temperature of the hot plate 22. As an example, the temperature of the hot plate 22 is maintained at approximately 300° to 500° during the heat treatment. The hot plate heater 24 is, for example, disposed inside the hot plate 22. The hot plate 22 is, for example, formed in a substantially circular plate shape. The diameter of the hot plate 22 may be larger than the diameter of the wafer W. The hot plate 22 includes a mounting surface 22a, and supports the wafer W while the wafer W is mounted at a predetermined position on the mounting surface 22a. The hot plate 22 may be made of a metal having high thermal conductivity, such as aluminum, silver, or copper.

[0074] The substrate elevating unit 30 elevates the wafer W on the hot plate 22. For example, the substrate elevating unit 30 elevates the wafer W between a processing position, where the wafer W is placed on the placement surface 22 a of the hot plate 22, and a transfer position, where the wafer W is transferred between the loading device (or unloading device) and the upper portion of the hot plate 22, spaced apart from the hot plate 22. The substrate elevating unit 30 includes a plurality (e.g., three) of support pins 32 and an elevating drive unit 34.

[0075] The support pins 32 are pins that support the wafer W from below. The support pins 32 are, for example, configured to penetrate the hot plate 22 and extend in the vertical direction. A plurality of support pins 32 can be arranged at equal intervals from each other in the circumferential direction near the center of the hot plate 22. The lifting drive unit 34 uses an electric motor or a lifting cylinder as a power source to lift the support pins 32. The lifting drive unit 34, for example, lifts the support pins 32 so that the upper end of the support pins 32 protrudes upward from the loading surface 22a, thereby raising the wafer W to the delivery position. In addition, the lifting drive unit 34 lowers the support pins 32 so that the upper end of the support pins 32 is located below the loading surface 22a, thereby lowering the wafer W to the processing position (loading the wafer W on the loading surface 22a). The lifting drive unit 34 lifts the support pins 32 according to the action instructions of the control device 100, thereby lifting the wafer W between the processing position and the delivery position.

[0076] The chamber 40 covers the wafer W supported by the heating unit 20. Since the chamber 40 covers the wafer W on the hot plate 22, a processing space S for performing heat treatment is formed on the hot plate 22. The processing space S is a space that is sealed to a degree that can sufficiently heat the film on the wafer W. The chamber 40 includes, for example, a top plate 42, side walls 44, and a chamber heater 46.

[0077] The top plate 42 is formed into a circular plate having the same diameter as the hot plate 22. The top plate 42 and the mounting surface 22a of the hot plate 22 are arranged opposite to each other in the vertical direction. That is, the top plate 42 covers the mounting surface 22a from above. The side wall 44 is formed to extend downward from the outer edge of the top plate 42. The side wall 44 surrounds the mounting surface 22a. Figure 3 In the illustrated example, the lower surface of the top plate 42, the inner surface of the side wall 44, and the mounting surface 22a define the processing space S. A chamber heater 46 is provided on the top plate 42 to raise the temperature of the top plate 42 (chamber 40). This prevents sublimates generated by heating the coating being processed from adhering to the chamber 40.

[0078] The chamber 40 is arranged in the shell of the heat treatment unit U2 in a manner that allows it to move in the up and down directions. The heat treatment unit U2 has, for example, a chamber driving part 48 (opening and closing switching part) that drives the chamber 40. The chamber driving part 48 uses an electric motor or the like as a power source to move the chamber 40 in the up and down directions. The chamber 40 is lowered by the chamber driving part 48, thereby forming a processing space S using the chamber 40. Hereinafter, the state in which the processing space S is formed by the chamber 40 is referred to as a "closed state". In the closed state, the lower end of the chamber 40 (side wall 44) is close to the hot plate 22. For example, in the closed state, the lower end of the side wall 44 (the lower end and its vicinity) may contact the hot plate 22, or a gap may be formed between the lower end of the side wall 44 and the hot plate 22. In this way, in the closed state, a closed processing space S may be formed, or a processing space S may be formed in a state with a gap in a portion. In addition, Figure 3 The case where a gap is formed between the side wall 44 and the heat plate 22 is illustrated.

[0079] The chamber 40 is raised by the chamber drive unit 48, and the chamber 40 is separated from the heating unit 20 (hot plate 22) compared to the closed state. Hereinafter, the state in which the chamber 40 is separated from the heating unit 20 compared to the closed state is referred to as the "open state". In the open state, no processing space S is formed on the hot plate 22, and the space above the hot plate 22 is open to the space outside the chamber 40. That is, in the open state, the chamber 40 is separated from the hot plate 22 to a degree that the wafer W cannot be fully heated. The chamber drive unit 48 raises and lowers the chamber 40 according to the operation instruction of the control device 100, thereby switching between the closed state and the open state.

[0080] The chamber 40 includes a gas release portion 50. The gas release portion 50 releases gas from above to the wafer W on the hot plate 22 in the processing space S within the chamber 40. The gas release portion 50 releases gas, for example, onto substantially the entire surface of the wafer W. The type of gas released by the gas release portion 50 is not limited, and for example, air, gas with adjusted water content, or inert gas (nitrogen) can be used. The gas release portion 50 is connected to a gas supply source via a supply passage 56. The gas release portion 50 may have a release head 52 provided on the top plate 42. A buffer space and a plurality of release holes 54 provided on the lower side of the top plate 42 are formed in the release head 52. The plurality of release holes 54 penetrate between the buffer space and the processing space S on the lower surface of the top plate 42 opposite to the wafer W on the hot plate 22. The buffer space is a space connecting the plurality of release holes 54 and the supply passage 56.

[0081] Figure 4 Observed from below Figure 3 Schematic diagram of the illustrated chamber 40. Figure 4 As shown, a plurality of release holes 54 are dispersedly provided on the lower surface of the top plate 42. For example, the plurality of release holes 54 are dispersedly provided in the portion (opposite portion) of the lower surface of the top plate 42 that is opposite to the wafer W on the hot plate 22, with a substantially uniform density. In addition, when viewed from above, release holes 54 may also be formed outside the opposite portion (outside the periphery of the wafer W). The plurality of release holes 54 are dispersedly arranged in the above-mentioned opposite portion. In the case of releasing a gas such as air from the gas release portion 50, the plurality of release holes 54 may be dispersedly provided in such a manner that the amount of release per unit time becomes substantially uniform over the entire surface area of ​​the wafer W.

[0082] The opening areas of the plurality of release holes 54 may be substantially the same as each other. In the case where the opening areas of the plurality of release holes 54 are substantially the same, the plurality of release holes 54 may be dispersedly arranged so that the ratio of the opening area of ​​the release holes 54 per unit area of ​​the relative parts becomes uniform. Alternatively, the shape of the release holes 54 may be circular or elliptical when viewed from the top and bottom. Alternatively, the plurality of release holes 54 may be dispersedly arranged so that the intervals between adjacent release holes 54 are substantially the same. As an example, Figure 4 As shown, when the plurality of release holes 54 are arranged two-dimensionally in the transverse and longitudinal directions, the intervals between adjacent release holes 54 in the transverse direction may be uniform, and the intervals between adjacent release holes 54 in the longitudinal direction may be uniform. Alternatively, the intervals between adjacent release holes 54 in the transverse direction may be substantially the same as the intervals between adjacent release holes 54 in the longitudinal direction.

[0083] return Figure 3The exhaust unit 60 exhausts the gas in the chamber 40 (in the processing space S) to the outside of the chamber 40. The exhaust unit 60 includes a peripheral exhaust unit 70, a central exhaust unit 80, and an exhaust switching unit 90.

[0084] The peripheral exhaust unit 70 exhausts the gas in the processing space S from the peripheral area outside the periphery of the wafer W supported by the heating unit 20. The peripheral exhaust unit 70 exhausts the inside of the chamber 40 from the periphery of the processing space S through a plurality of exhaust holes 72 (a plurality of peripheral exhaust holes) provided outside the gas release unit 50. The plurality of exhaust holes 72 are as follows: Figure 4 As shown in the example, it is provided outside the release head portion 52 of the gas release portion 50 .

[0085] A plurality of exhaust holes 72 are provided in the top plate 42 of the chamber 40, and are opened respectively at the peripheral portion of the lower surface of the top plate 42 (i.e., the peripheral portion of the upper surface of the processing space S). The plurality of exhaust holes 72 can be arranged in a ring shape on the outside of the release head 52. The plurality of exhaust holes 72 can also be positioned outside the periphery of the wafer W on the hot plate 22 when viewed from above. In other words, the plurality of exhaust holes 72 can be positioned outside the wafer W on the hot plate 22 when viewed from above. The shape of the exhaust holes 72 in the top plate 42 is not particularly limited. The plurality of exhaust holes 72 are connected to an exhaust pump via an exhaust duct 74. By suction of the exhaust pump, the gas in the processing space S is discharged to the outside of the chamber 40 via the plurality of exhaust holes 72.

[0086] The central exhaust portion 80 exhausts the gas in the processing space S from a central area that is inside the periphery of the chip W supported by the heating portion 20. When viewed from above, the outer edge of the central area is determined by, for example, a circle having a radius half the radius of the chip W. However, the central area is not limited to the above area, and for example, the central exhaust portion 80 may exhaust the gas from an outside that is half the radius of the chip W. The central exhaust portion 80 has an exhaust hole 82 (central exhaust hole) provided on the release head 52 of the gas release portion 50, and the central axis Ax may be located in the exhaust hole 82. As Figure 4 As shown, the center of the exhaust hole 82 may be substantially aligned with the central axis Ax. Alternatively, the center of the exhaust hole 82 may be eccentric relative to the central axis Ax in the central region.

[0087] The exhaust hole 82 is provided in the gas release portion 50 in a manner that opens to the processing space S. Specifically, the exhaust hole 82 is provided in the top plate 42 including the release head 52 of the gas release portion 50, and opens in the central portion of the lower surface of the top plate 42. The shape of the exhaust hole 82 in the top plate 42 including the release head 52 is not particularly limited. As an example, the shape of the exhaust hole 82 can be circular or elliptical when viewed from the top and bottom directions. The size (diameter) of the exhaust hole 82 can be larger than the size (diameter) of the release hole 54, or larger than the exhaust hole 72. The exhaust hole 82 is connected to the exhaust pump via the exhaust pipe 84. The gas in the processing space S is discharged to the outside of the chamber 40 through the exhaust hole 82 by suction of the exhaust pump.

[0088] The exhaust switching unit 90 switches the exhaust state from the processing space S. Specifically, the exhaust switching unit 90 switches between a state in which the processing space S is exhausted from the peripheral exhaust unit 70 (hereinafter referred to as the "first state") and a state in which the processing space S is exhausted from at least the central exhaust unit 80 (hereinafter referred to as the "second state"). The following describes an example in which the processing space S is exhausted from the peripheral exhaust unit 70 in addition to the central exhaust unit 80 in the second state. The exhaust switching unit 90 includes, for example, a valve 92 and a valve 94.

[0089] Valve 92 switches the exhaust state based on the peripheral exhaust section 70. Specifically, valve 92 is provided in the exhaust duct 74 and opens and closes the exhaust hole 72 and the exhaust pump. Valve 94 switches the exhaust state based on the central exhaust section 80. Specifically, valve 94 is provided in the exhaust duct 84 and opens and closes the exhaust hole 82 and the exhaust pump. The exhaust pump can continuously exhaust air while the coating and developing device 2 is operating, or the exhaust state from the processing space S can be switched by opening and closing valves 92 and 94 individually. In this case, when valve 92 is closed, exhaust from the peripheral exhaust section 70 is stopped, and when valve 92 is open, exhaust from the peripheral exhaust section 70 is in progress. Furthermore, when valve 94 is closed, exhaust from the central exhaust section 80 is stopped, and when valve 94 is open, exhaust from the central exhaust section 80 is in progress. The exhaust switching section 90 (valves 92 and 94) operates according to the operation instructions of the control device 100. The valves 92 and 94 are each, for example, a solenoid valve.

[0090] The heat treatment unit U2 also has a cooling plate 98 (see Figure 9(c) The cooling plate 98 reciprocates between a cooling position outside the chamber 40 and a position for carrying wafers W disposed at least partially within the chamber 40. Alternatively, the cooling plate 98 may be fixed in a horizontal position parallel to the hot plate 22, and the thermal processing unit U2 may include a transport arm that transports the wafers W while moving between the cooling plate 98 and the hot plate 22.

[0091] The exhaust volume of the central exhaust section 80 (the amount of gas discharged per unit time) may be the same as the exhaust volume of the peripheral exhaust section 70, or may be greater than the exhaust volume of the peripheral exhaust section 70. As an example, the exhaust volume of the central exhaust section 80 may be 1.1 to 5.0 times the exhaust volume of the peripheral exhaust section 70. In addition, the supply volume of gas from the gas release section 50 (the amount of gas released per unit time) may be smaller than the respective exhaust volumes of the peripheral exhaust section 70 and the central exhaust section 80. As an example, the supply volume of gas from the gas release section 50 may be 1 / 6 to 1 / 2 of the exhaust volume of the central exhaust section 80. In this case, the gas can be sucked into the chamber 40 from the gap between the lower end of the chamber 40 and the hot plate 22.

[0092] (Control device)

[0093] The control device 100 controls various components of the coating and developing apparatus 2, including the thermal processing unit U2. The control device 100 is configured to: cause the heating unit 20 to support and heat the wafer W, which is covered by the chamber 40; exhaust the processing space S from a peripheral region outside the periphery of the wafer W supported by the heating unit 20; exhaust the processing space S from a central region inside the periphery of the wafer W supported by the heating unit 20; and release gas onto the surface of the wafer W through the plurality of release holes 54.

[0094] like Figure 2 As shown, the control device 100 has a storage unit 102 and a control unit 104 as a functional structure. The storage unit 102 stores a program for operating the various parts of the coating and developing device 2 including the heat treatment unit U2. The storage unit 102 also stores various data (for example, information related to the instruction signal for operating the heat treatment unit U2) and information from sensors and the like provided in various parts. The storage unit 102 is, for example, a semiconductor memory, an optical disk, a magnetic disk, or a magneto-optical disk. The program may also be contained in an external storage device separate from the storage unit 102 or an intangible medium such as a transmission signal. The program may also be installed from the other media mentioned above to the storage unit 102 so that the storage unit 102 stores the program. The control unit 104 controls the operation of the various parts of the coating and developing device 2 based on the program read from the storage unit 102.

[0095] The control device 100 is composed of one or more control computers. For example, the control device 100 has Figure 5 The circuit 110 shown. The circuit 110 has one or more processors 112, a memory 114, a storage 116, a timer 122 and an input / output port 118. The memory 116 has a computer-readable storage medium such as a hard disk. The storage medium stores a substrate processing flow for the control device 100 to execute a heat treatment process including the heat treatment process described later. The storage medium can be a removable medium such as a non-volatile semiconductor memory, a magnetic disk and an optical disk. The memory 114 temporarily stores the program downloaded from the storage medium of the memory 116 and the calculation results of the processor 112. The processor 112 and the memory 114 cooperate to execute the above program to constitute the above-mentioned functional modules. The timer 122 measures the elapsed time by counting the reference pulses of a certain period, for example. The input / output port 118 inputs and outputs electrical signals to and from the heat treatment unit U2 according to the instructions from the processor 112.

[0096] Furthermore, the hardware configuration of the control unit 100 is not necessarily limited to each functional module being configured by a program. For example, each functional module of the control unit 100 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) integrating the dedicated logic circuits.

[0097] [Substrate processing flow]

[0098] Figure 6 This is a flowchart illustrating an example of a substrate processing flow including coating and developing. The control device 100 controls the coating and developing device 2, for example, to perform coating and developing processing on a single wafer W according to the following flow. First, the control unit 104 of the control device 100 controls the transport device A1 to transport the wafer W from the carrier C to the shelf unit U10, and then controls the transport device A7 to place the wafer W in the chamber for the processing module 11.

[0099] Next, the control unit 104 controls the conveying device A3 to convey the wafer W from the shelf unit U10 to the coating unit U1 and the thermal treatment unit U2 in the processing module 11. The control unit 104 controls the coating unit U1 and the thermal treatment unit U2 to form a lower film on the surface of the wafer W (step S01). The thermal treatment accompanying the formation of the lower film in step S01 (hereinafter referred to as the "thermal treatment process") will be described later. Afterwards, the control unit 104 controls the conveying device A3 to return the wafer W with the lower film formed thereon to the shelf unit U10, and controls the conveying device A7 to place the wafer W in the chamber for the processing module 12.

[0100] Next, the control unit 104 controls the transport device A3 to transport the wafer W from the shelf unit U10 to the coating unit U3 and the thermal treatment unit U4 within the processing module 12. The control unit 104 controls the coating unit U3 and the thermal treatment unit U4 to form a resist film on the lower film of the wafer W (step S02). Thereafter, the control unit 104 controls the transport device A3 to return the wafer W to the shelf unit U10 and controls the transport device A7 to place the wafer W in the chamber for the processing module 13.

[0101] Next, the control unit 104 controls the transport device A3 to transport the wafer W from the shelf unit U10 to each unit within the processing module 13. The control unit 104 controls the coating unit U5 and the thermal treatment unit U6 to form an upper layer film on the resist film of the wafer W (step S03). Thereafter, the control device 100 controls the transport device A3 to transport the wafer W to the shelf unit U11.

[0102] Next, the control unit 104 controls the transport device A8 to transport the wafer W stored in the shelf unit U11 to the exposure device 3. The exposure device 3 then performs an exposure process on the film formed on the wafer W (step S04). The control unit 104 then controls the transport device A8 to receive the wafer W that has undergone the exposure process from the exposure device and place the wafer W in the chamber for the processing module 14 in the shelf unit U11.

[0103] Next, the control unit 104 controls the conveying device A3 to convey the wafer W on the shelf unit U11 to the heat treatment unit U8 in the processing module 14. Then, the control device 100 controls the heat treatment unit U8 to perform a pre-development heat treatment on the coating of the wafer W (step S05). Next, the control unit 104 controls the developing unit U7 and the heat treatment unit U8 to perform a developing process and a post-development heat treatment on the coating of the wafer W that has been heat treated by the heat treatment unit U8 (steps S06 and S07). Afterwards, the control unit 104 controls the conveying device A3 to return the wafer W to the shelf unit U10, and controls the conveying device A7 and the conveying device A1 to return the wafer W to the carrier C. The above substrate processing including the coating and developing process is completed. The control unit 104 can also repeat the processing of steps S01 to S07 on other wafers W (subsequent wafers W).

[0104] (Heat treatment process)

[0105] Figure 7 1 is a flowchart showing an example of a heat treatment process performed in the heat treatment unit U2. Figure 7The flowchart illustrated in FIG. 1 illustrates the process of sequentially heat treating a plurality of wafers W in the heat treatment unit U2. First, the control unit 104 of the control device 100 controls the heat treatment unit U2 so that, while the hot plate 2 is maintained at a predetermined temperature and the central exhaust unit 80 is exhausting, gas is released from the gas release unit 50 (step S11). For example, the control unit 104 switches the on-off valve provided in the supply passage 56 from a closed state to an open state, thereby supplying gas from the gas supply source into the buffer space of the release head 52. This causes gas to be released from the plurality of release holes 54 formed in the release head 52.

[0106] Next, the control unit 104 controls the exhaust switching unit 90 to enable exhaust from the peripheral exhaust unit 70 (step S12). For example, the control unit 104 switches the valve 92 provided in the exhaust duct 74 connected to the exhaust hole 72 of the peripheral exhaust unit 70 from a closed state to an open state. Thus, the gas is exhausted from the space below the plurality of exhaust holes 72 through the exhaust holes 72. By executing step S12, the exhaust state in the chamber 40 becomes a second state in which exhaust is performed based on the peripheral exhaust unit 70 and the central exhaust unit 80. In subsequent steps, the control unit 104 maintains the temperature of the hot plate 22 at a predetermined temperature according to the processing conditions stored in the storage unit 102, and continues to release the gas from the gas release unit 50 and exhaust the gas from the peripheral exhaust unit 70. In the second state, the gas released from the gas release unit 50 is mainly exhausted from the central exhaust unit 80. Furthermore, when a gap is formed between the side wall 44 and the hot plate 22, gas entering the chamber 40 through the gap is exhausted from both the outer peripheral exhaust portion 70 and the central exhaust portion 80. Therefore, a gas flow is mainly formed in the chamber 40 from the outer peripheral side to the inner peripheral side (center side).

[0107] Next, the control unit 104 controls the chamber driver 48 to raise the chamber 40 (step S13). For example, the control unit 104 controls the chamber driver 48 to switch from a closed state in which the chamber 40 forms the processing space S to an open state in which the chamber 40 is separated from the heating unit 20 (hot plate 22).

[0108] Next, the control unit 104 controls the thermal processing unit U2 to deliver the wafer W, the target wafer, coated with the process liquid, into the chamber 40 (step S14). For example, the control unit 104 controls the thermal processing unit U2 to insert the cooling plate 98, which carries the wafer W, between the hot plate 22 and the chamber 40 (disposed at the in-and-out position). The control unit 104 then raises the support pins 32 via the lift drive 34, causing the support pins 32 to retrieve the wafer W on the cooling plate 98 disposed above the hot plate 22. Thus, the wafer W, the target wafer, is delivered into the chamber 40.

[0109] Next, the control unit 104 controls the lift drive unit 34 to lower the wafer W (step S15 ). Specifically, the control unit 104 controls the lift drive unit 34 to lower the support pins 32 supporting the wafer W to place the wafer W on the placement surface 22 a of the hot plate 22 .

[0110] Next, the control unit 104 controls the exhaust switching unit 90 to stop exhaust from the central exhaust unit 80 (step S16). For example, the control unit 104 switches the valve 94 from an open state to a closed state to stop exhaust from the central exhaust unit 80. As a result, in the exhaust unit 60, gas is not exhausted from the exhaust holes 82, but is exhausted from the plurality of exhaust holes 72. In other words, the exhaust state within the chamber 40 is switched from the second state to the first state, in which exhaust from the peripheral exhaust unit 70 is performed instead of exhaust from the central exhaust unit 80.

[0111] Next, the control unit 104 controls the chamber driving unit 48 to lower the chamber 40 (step S17). Figure 8 As shown in (a), the control unit 104 controls the chamber driving unit 48 to switch from the open state to the closed state forming the processing space S. Thus, the heating of the wafer W to be processed is started. By performing steps S11 to S17, gas is released from the gas release portion 50, and heat treatment is started in a state where exhaust from the peripheral exhaust portion 70 is performed instead of exhaust from the central exhaust portion 80. In the first state, the gas released from the gas release portion 50 and the gas entering the chamber 40 from the gap formed between the side wall 44 and the hot plate 22 are exhausted from the peripheral exhaust portion 70. Therefore, on the surface of the wafer W, a gentle flow of gas toward the peripheral side is formed.

[0112] Next, the control unit 104 waits until the first prescribed time has passed after the descent of the chamber 40 is completed (from the start of heating of the wafer W). The first prescribed time is stored in the storage unit 102. The first prescribed time is set to the extent that the coating on the wafer W is solidified at a prescribed level. During the period when the control unit 104 waits until the first prescribed time has passed, the first state of exhausting the processing space S from the peripheral exhaust unit 70 continues. During the first prescribed time, exhaust is performed from the peripheral area instead of the central area, and gas is released from the gas release unit 50 from a plurality of release holes 54 to the surface of the wafer W on the hot plate 22. In the initial stage from the start of heating of the wafer W, the curing (formation) of the coating on the wafer W proceeds one step further. As described above, in the initial stage, by becoming the first state of exhausting the processing space S from the peripheral area without including the central area, the influence of the airflow generated by the exhaust on the formation of the coating can be suppressed.

[0113] After the first predetermined time has elapsed, the control unit 104 switches the exhaust from the central exhaust unit 80 from the stopped state to the exhaust state (step S19). Specifically, the control unit 104 switches the valve 94 from the closed state to the open state to enable exhaust from the central exhaust unit 80. That is, the control unit 104 controls the exhaust switching unit 90 to release gas from the plurality of release holes 54 using the gas release unit 50, and the exhaust state within the chamber 40 is switched from the first state to the second state.

[0114] Next, the control unit 104 waits from the time it switches to the second state (from the start of exhaust based on the central exhaust unit 80) until the second prescribed time has passed (step S20). The second prescribed time is stored in the storage unit 102. The second prescribed time is set to the extent that the coating on the wafer W is cured to the desired level during the heat treatment. While the control unit 104 waits until the second prescribed time has passed, the second state of exhausting the processing space S from the peripheral exhaust unit 70 and the central exhaust unit 80 continues. During the second prescribed time, as Figure 8 As shown in (b), exhaust from the central area and exhaust from the peripheral area are carried out, and gas is released from a plurality of release holes 54 to the surface of the wafer W on the hot plate 22 using a gas release portion 50. The solidification of the coating on the wafer W progresses to a stage (latter stage) where the influence of the airflow on the coating is smaller than that in the initial stage, and the second state of increasing the exhaust from the central area is achieved, thereby enabling efficient discharge of sublimates. As described above, in the second state, near the surface of the wafer W, a flow of gas is formed from the peripheral side of the wafer W to the inner peripheral side (central side). By utilizing such a flow of gas, sublimates can be discharged from the central exhaust portion 80.

[0115] After the second predetermined time has passed, the control unit 104 controls the lifting drive unit 34 to lift the wafer W (step S21). Specifically, the control unit 104, as shown in FIG. Figure 8As shown in (c), the support pins 32 are raised by the lift drive 34, so that the wafer W is raised from the heating unit 20 (hot plate 22) and approaches the top plate 42 of the chamber 40. For example, the control unit 104 controls the lift drive 34 to raise the wafer W to a standby position set between the processing position where heating is performed and the transfer position where the wafer W is loaded and unloaded. At this time, the control unit 104 controls the chamber drive 48 to maintain the closed state of the processing space S formed by the chamber 40. The control unit 104 controls the lift drive 34 to continuously exhaust the central area and the peripheral area, and to raise the wafer W to approach the top plate 42. In addition, in step S21, the wafer W is separated from the mounting surface 22a, thereby completing the heating of the wafer W to be processed by the heating unit 20. In addition, when the wafer W is moved to the standby position, the movement of the gas released from the gas release unit 50 along the surface of the wafer W and the exhaust from the central exhaust unit 80 can be promoted. Therefore, the discharge of sublimates from the central exhaust portion 80 can be promoted.

[0116] Then, the control unit 104 waits until the third prescribed time has passed after the wafer W is raised to the standby position (step S22). The third prescribed time is stored in the storage unit 102. The third prescribed time is set to a degree that the temperature of the wafer W heated by the hot plate 22 decreases, and the generation of the sublimates from the coating on the wafer W is fully reduced. The third prescribed time can be set to a degree of several seconds to several tens of seconds. As an example, from the viewpoint of taking into account the recovery of the sublimates and the maintenance of production capacity, the third prescribed time can be 1 to 10 seconds, or 1.5 to 8 seconds, or 2 to 6 seconds. As described above, the control unit 104 controls the thermal treatment unit U2 so that the state of the wafer W close to the top plate 42 continues for the third prescribed time.

[0117] After the third predetermined time has passed, the control unit 104 controls the chamber driving unit 48 to raise the chamber 40 (step S23). Figure 9 As shown in (a) of FIG. 1 , the control unit 104 controls the chamber driving unit 48 to switch the state from the closed state in which the chamber 40 is close to the hot plate 22 to the open state in which the chamber 40 is away from the hot plate 22, thereby opening the processing space S to the outside of the chamber 40. As described above, the control unit 104 controls the chamber driving unit 48 to switch the state from the closed state to the open state after the wafer W is brought close to the top plate 42 (more specifically, after the wafer W remains close to the top plate 42).

[0118] Next, the control unit 104 controls the lifting drive unit 34 to raise the wafer W in the standby position (step S24). Figure 9 As shown in (b), the control unit 104 raises the support pins 32 supporting the wafer W via the lifting drive unit 34 so as to raise the wafer W from the standby position to the transfer position.

[0119] Next, the control unit 104 controls the heat treatment unit U2 to send the wafer W at the transfer position out of the chamber 40 (step S25). For example, the control unit 104 controls the driving unit for moving the cooling plate 98, such as Figure 9 As shown in (c), the cooling plate 98 is inserted into the chamber 40 (between the wafer W supported by the supporting pins 32 and the hot plate 22) from between the chamber 40 and the hot plate 22. Then, the control unit 104 lowers the supporting pins 32 supporting the wafer W through the lifting drive unit 34. As a result, the wafer W is transferred from the supporting pins 32 to the cooling plate 98. Thereafter, the control unit 104 moves the cooling plate 98 holding the wafer W to the outside of the chamber 40 by controlling the drive unit. As a result, the wafer W to be processed is sent out of the chamber 40. As described above, a series of heat treatments on one wafer W are completed.

[0120] After step S25, the control unit 104 repeats the series of steps S14 to S25. This allows multiple wafers W to be heat-treated sequentially. Steps S22 to S25 in one heat treatment and steps S14 to S17 in the next heat treatment represent the process of switching the target wafer W. While switching target wafers W, the control unit 104 causes the gas release unit 50 to continue releasing gas from the multiple release holes 54 and continues exhausting gas from the peripheral exhaust unit 70.

[0121] [Effects of the First Embodiment]

[0122] The coating and developing apparatus 2 of the first embodiment described above includes a heat treatment unit U2 for performing heat treatment on a wafer W having a film formed thereon, and a control device 100 for controlling the heat treatment unit U2. The heat treatment unit U2 includes: a heating section 20 for supporting and heating the wafer W; a chamber 40 for housing the wafer W supported by the heating section 20; a gas release section 50 having a release head 52 formed with a plurality of release holes 54 for releasing gas from the plurality of release holes 54 onto the surface of the wafer W, wherein the plurality of release holes 54 are dispersedly disposed on a surface facing the wafer W supported by the heating section 20; a peripheral exhaust section 70 for exhausting a processing space S within the chamber 40 from a peripheral region outside the periphery of the wafer W supported by the heating section 20; and a central exhaust section 80 for exhausting the processing space S from a central region inside the periphery of the wafer W supported by the heating section 20.

[0123] The substrate processing flow of the first embodiment described above includes a step of heat treating the wafer W having a film formed thereon. This step of heat treating the wafer W includes: heating the wafer W while it is supported by the heating unit 20 and enclosed by the chamber 40; exhausting the processing space S from a peripheral region outside the periphery of the wafer W supported by the heating unit 20; exhausting the processing space S from a central region inside the periphery of the wafer W supported by the heating unit 20; and releasing gas onto the surface of the wafer W from a plurality of release holes 54 dispersedly provided on the surface opposite the wafer W supported by the heating unit 20.

[0124] In this coating and developing device 2 and substrate processing flow, exhaust from the central region is performed during at least a portion of the heat treatment of the target wafer W, thereby efficiently recovering sublimates from the coating. Furthermore, by releasing gas from the gas release section 50 onto the surface of the wafer W, the effect of the gas flow accompanying the exhaust from the central region on the film thickness is reduced. Consequently, sublimates can be efficiently recovered and the film thickness uniformity of the target film can be improved.

[0125] While exhausting from the center allows for efficient recovery of sublimates, the airflow on wafer W generated by center exhaust affects the uniformity of the film thickness on wafer W. Specifically, the airflow accompanying center exhaust rises as it moves from the periphery of wafer W toward the approximate center. Consequently, the distance between the boundary layer of this airflow and the surface of wafer W varies across the wafer W, potentially causing uneven distribution of volatile components in the film on wafer W. Consequently, the film thickness on wafer W tends to increase toward the center.

[0126] In contrast, in the coating and developing device 2 and the substrate processing flow, gas can be released from a plurality of release holes 54 dispersedly provided on the surface facing the surface of the wafer W. The air flow generated by exhaust from the central area (hereinafter referred to as "air flow F") tends to rise as it moves from the periphery of the wafer W toward the center. However, as shown in FIG. Figure 8 As shown in (b), by releasing gas from multiple release holes 54, the rise of airflow F can be suppressed over substantially the entire surface of the wafer W. Consequently, the gap between the boundary layer of airflow F generated by central exhaust and the surface of wafer W can be reduced within the surface of wafer W. Consequently, variations in film thickness within the surface of wafer W caused by central exhaust can be suppressed. This allows for efficient recovery of sublimates and improves the thickness uniformity of the film being heat-treated.

[0127] In the first embodiment described above, the heat treatment unit U2 further includes an exhaust switching unit 90 that switches between a first state and a second state. The first state exhausts the processing space S from the peripheral exhaust unit 70, and the second state exhausts the processing space S from at least the central exhaust unit 80. The control device 100 utilizes the gas release unit 50 to release gas from the plurality of release holes 54 and controls the exhaust switching unit 90 to switch from the first state to the second state. After heating the wafer W to be processed, switching from the first state to the second state to exhaust the processing space S from the central exhaust unit 80 enables efficient recovery of sublimates from the film on the wafer W. On the other hand, since the film is formed in the post-heating stage, the airflow accompanying the exhaust has little effect on variations in film thickness. Therefore, sublimates can be efficiently recovered, and the thickness uniformity of the film to be processed can be further improved.

[0128] In addition, in the above-mentioned embodiment, exhaust is continuously performed from the peripheral exhaust portion 70 in the second state, thereby performing exhaust from both the central exhaust portion 80 and the peripheral exhaust portion 70. By being in such a state, it is possible to suppress the confusion of the airflow caused by the change of the airflow in the processing space S when switching from the first state to the second state. Therefore, it is possible to prevent the film thickness uniformity of the coating of the heat treatment object from being reduced due to the confusion of the airflow generated when switching the state. In particular, as in the above-mentioned embodiment, when a gap is formed between the side wall 44 and the hot plate 22 and gas enters the chamber 40 through this gap, an upflow is formed by exhausting from the peripheral exhaust portion 70. Therefore, in the second state, exhaust is continuously performed from the peripheral exhaust portion 70, thereby the gas entering from the gap at the periphery of the wafer W is discharged to the peripheral exhaust portion 70, which leads to the continued formation of an upflow. Therefore, it is possible to further suppress the confusion of the airflow near the surface of the wafer W that is closer to the inside than the upflow.

[0129] In the first embodiment described above, the heat treatment unit U2 further includes a substrate elevator 30 for elevating a wafer W, and a chamber driver 48 for switching between a closed state, in which the chamber 40 forms a processing space S, and an open state, in which the chamber 40 is spaced away from the heating unit 20. The chamber 40 includes a top plate 42 provided with a release head 52. The control device 100 controls the substrate elevator 30 to elevate the wafer W from the heating unit 20 and bring it closer to the top plate 42, and controls the chamber driver 48 to switch from the closed state to the open state after the wafer W is brought closer to the top plate 42. Wafer W, heated by being elevated from the heating unit 20, may also produce sublimates due to the heat generated after heating. In this configuration, by elevating the wafer W from the heating unit 20 and bringing it closer to the chamber 40, sublimates produced after heating are trapped within the chamber 40 and discharged outside. Consequently, contamination of the heat treatment unit U2 by sublimates from the film on the wafer W can be suppressed.

[0130] In the first embodiment described above, the heat treatment unit U2 sequentially performs heat treatment on a plurality of wafers W including the above-mentioned wafer W. The control device 100 causes the gas release portion 50 to continuously release gas from the plurality of release holes 54 during the replacement of the wafer W to be processed. In this case, the ambient temperature change accompanying the release of gas from the gas release portion 50 is maintained substantially constant. Therefore, the treatment result of the heat treatment can be stabilized between wafers W. For example, when the release head 52 of the gas release portion 50 is provided on the top plate 42, the temperature of the chamber 40 does not change during the replacement of the wafer W due to whether or not gas is released from the gas release portion 50. Therefore, it is easy to maintain the temperature of the chamber 40 substantially constant in the subsequent heat treatment, and the heat treatment of the wafer W can be stabilized.

[0131] In the heat treatment process of the first embodiment described above, the step of heat treating the wafer W further includes releasing gas from the plurality of release holes 54 toward the surface of the wafer W, and switching from a first state in which the processing space S is exhausted from the peripheral region to a second state in which the processing space S is exhausted from at least the central region. In this case, similar to the coating and developing apparatus 2 described above, sublimates can be efficiently recovered, and the film thickness uniformity of the film being heat treated can be further improved.

[0132] In the first embodiment described above, the step of heat treating the wafer W further includes: raising the wafer W from the heating unit 20 and bringing it close to the ceiling 42 of the chamber 40; and, after the wafer W is brought close to the ceiling 42, switching the closed state, in which the chamber 40 forms the processing space S, to an open state in which the chamber 40 is further away from the heating unit 20 than in the closed state. In this case, similar to the coating and developing apparatus 2 described above, contamination of the heat treatment unit U2 by sublimates from the coating can be suppressed.

[0133] In the first embodiment described above, the heat treatment step includes sequentially performing heat treatment on a plurality of wafers W. This sequential heat treatment step includes continuously releasing gas from the plurality of release holes 54 while the wafer W being processed is being replaced. In this case, similar to the coating and developing apparatus 2 described above, the heat treatment results can be stabilized between wafers W.

[0134] Furthermore, in the first embodiment described above, after the underlying film is heat-treated in the heat treatment unit U2, a resist film is applied to the surface of the wafer W having the underlying film formed thereon by the coating unit U1 of the processing module 12, thereby forming a resist coating. Depending on the type of underlying film, a treatment liquid that is more likely to produce sublimates may be used. Alternatively, a treatment liquid with high airflow sensitivity may be used. When such a treatment liquid is used to form the underlying film, the coating and developing device 2 and substrate processing flow of the first embodiment described above are useful because they achieve both efficient recovery of sublimates and uniform film thickness.

[0135] (Variation)

[0136] The structure of the central exhaust section 80 is not limited to the above example. Instead of a single exhaust hole 82, the central exhaust section 80 may be configured to exhaust the processing space S from a plurality of exhaust holes 82 (a plurality of central exhaust holes) provided on the release head 52 (top plate 42) of the gas release section 50. Figure 10 As shown, for example, the release head 52 may be provided with a plurality of exhaust holes 82 arranged so as to surround the central axis Ax. Each of the plurality of exhaust holes 82 may be eccentric from the central axis Ax. Alternatively, the plurality of exhaust holes 82 may be arranged at equal intervals in the circumferential direction of the central axis Ax. Alternatively, each of the plurality of exhaust holes 82 may be larger than the release hole 54. Alternatively, one or more release holes 54 may be arranged between adjacent exhaust holes 82 in the plurality of exhaust holes 82. Furthermore, the release head 52 may be provided with both a plurality of exhaust holes 82 arranged around the central axis Ax and an exhaust hole 82 arranged on the central axis Ax.

[0137] Due to the flow of air flowing through the exhaust holes 82 in the central exhaust section 80, the film thickness on the wafer W tends to be higher at locations corresponding to the exhaust holes 82 than at other locations. By exhausting the processing space S from the central region using multiple exhaust holes 82, the amount of exhaust gas discharged per unit time from each exhaust hole 82 is reduced, while the total exhaust volume remains the same. Consequently, the airflow to each exhaust hole 82 is weaker, reducing the amount of film thickness protrusion at locations corresponding to a single exhaust hole 82.

[0138] like Figure 11As shown, the gas release portion 50 may also include a nozzle portion 58 that releases gas to the bottom of the exhaust hole 82. The nozzle portion 58 may also be formed in a cylindrical shape in a manner connected between the buffer space of the release head 52 and the processing space S. Alternatively, the nozzle portion 58 may be a release hole that passes through the lower surface of the release head 52 in a vertically oblique upward direction. Alternatively, a plurality of nozzle portions 58 may be arranged to surround one exhaust hole 82. The amount of gas released from each nozzle portion 58 may be approximately the same as or different from the amount released from each release hole 54. During the heat treatment of the wafer W, the control portion 104 utilizes the gas release portion 50 to supply gas to the processing space S from the release hole 54 and the nozzle portion 58. Figure 11 In the illustrated release head 52 , when gas is supplied from a gas supply source to the buffer space of the release head 52 , the gas is released into the processing space S through the plurality of release holes 54 and the plurality of nozzle portions 58 .

[0139] In this structure, the central exhaust section 80 includes an exhaust hole 82 provided in the discharge head 52 so as to open into the processing space S. The gas discharge section 50 also includes a nozzle section 58 for discharging gas below the exhaust hole 82. By discharging gas from the nozzle section 58 below the exhaust hole 82, the airflow to the exhaust hole 82 is weakened below the exhaust hole 82. This can suppress the amount of film thickness projection at the position corresponding to the exhaust hole 82. As a result, the film thickness uniformity within the surface of the wafer W can be further improved.

[0140] In the heat treatment process performed by the heat treatment unit U2 having such a structure, exhausting the processing space S from the central area includes exhausting the gas in the processing space S through the exhaust holes 82 provided in the discharge head 52 having a plurality of discharge holes 54, and releasing the gas from the nozzle 58 toward the bottom of the exhaust holes 82. In this case, the film thickness uniformity within the wafer W surface can also be further improved.

[0141] In the example described above, the density of the plurality of release holes 54 is substantially uniform across the entire surface of the portion of the top plate 42 facing the wafer W (the facing portion). However, the density of the plurality of release holes 54 may be higher in the region near the exhaust hole 82 of the central exhaust portion 80 than in other regions. Specifically, the ratio of the opening area of ​​the release holes 54 in the region near the exhaust hole 82 (the vicinity) (the ratio of the opening area of ​​the release holes 54 to the total area of ​​the vicinity) may be greater than the ratio of the opening area of ​​the release holes 54 in regions other than the vicinity.

[0142] The vicinity of the exhaust hole 82 can be set to an area facing a portion of the wafer W where the film thickness, etc., is affected by exhaust from the exhaust hole 82. In one example, if a single exhaust hole 82 is located on the central axis Ax, the vicinity of the exhaust hole 82 can be set to have a radius approximately 2 to 10 times the radius of the exhaust hole 82, centered on the central axis Ax. Alternatively, if multiple exhaust holes 82 are located around the central axis Ax, the vicinity of the exhaust hole 82 can be set to have a radius approximately 1.1 to 5 times the distance between the central axis Ax and the center of each exhaust hole 82, centered on the central axis Ax. Furthermore, the vicinity of the exhaust hole 82 can be set to have a radius approximately 1 / 6 to 1 / 3 the radius of the wafer W. The location of the vicinity of the densely arranged multiple release holes 54 can also be changed depending on the location of the exhaust holes 82.

[0143] In the above structure, the density of the plurality of release holes 54 in the area near the exhaust hole 82 is higher than the density of the plurality of release holes 54 in other areas. Therefore, the airflow to the exhaust hole 82 is weaker below the exhaust hole 82. This can suppress the amount of film thickness projection at the position corresponding to the exhaust hole 82. Therefore, the film thickness uniformity within the surface of the wafer W can be further improved.

[0144] The method of heating the wafer W as the processing target and bringing the wafer W close to the top plate 42 is not limited to the above example. Figure 7 After step S20 shown in FIG. 1 (after the second state continues for the second predetermined time), as shown in FIG. Figure 12 As shown in (a), the control unit 104 maintains the wafer W surrounded by the chamber 40 while raising the wafer W and the chamber 40 substantially simultaneously. For example, while the chamber 40 remains closed, the control unit 104 controls the substrate elevating unit 30 to raise the wafer W so that it approaches the top plate 42. Then, after the wafer W approaches the top plate 42, the control unit 104 does not wait for a predetermined period of time, but controls the substrate elevating unit 30 and the chamber drive unit 48 so that the wafer W and the chamber 40 rise at substantially the same speed. As an example, the control unit 104 raises the wafer W and the chamber 40 until the wafer W is positioned at the transfer position.

[0145] Then, the control unit 104 may place the wafer W at the transfer position and keep the wafer W close to the top plate 42 for a predetermined time. Figure 12 As shown in FIG. 5( b ), while the wafer W is maintained at the transfer position, the chamber driving unit 48 is controlled to further raise the chamber 40. In this case, contamination of the heat treatment unit U2 by sublimates from the coating can be suppressed.

[0146] While the above description uses the lower film formed on the wafer W to be heat-treated as an example, the film to be heat-treated may also be a resist film, an upper film, or a coating of a developer, each of which is heat-treated in the processing modules 12, 13, and 14, or may be a coating on the wafer W other than the aforementioned films. Thermal processing units U4, U6, and U8 may each include a chamber 40 including a gas release portion 50 and an exhaust portion 60, similar to thermal processing unit U2. Furthermore, the substrate to be processed is not limited to a semiconductor wafer, and may include, for example, a glass substrate, a mask substrate, an FPD (Flat Panel Display), and the like.

[0147] [Second embodiment]

[0148] Below, refer to Figures 13 to 18 , the substrate processing system of the second embodiment is described. The substrate processing system of the second embodiment is different from the substrate processing system 1 of the first embodiment in that the processing module 11 does not have the heat treatment unit U2 but has the heat treatment unit U20. The heat treatment unit U20 is, for example, Figure 13 The embodiment shown includes a housing 198, a heating unit 20, a substrate elevator 30, a chamber 40A, and an exhaust unit 60A. The housing 198 accommodates at least the heating unit 20, the substrate elevator 30, and the chamber 40A. In this case, the chamber 40A is disposed within a storage space V formed by the housing 198.

[0149] The chamber 40A, like the chamber 40, forms a processing space S for heat treatment on the hot plate 22 by covering the wafer W supported by the heating unit 20. The chamber 40A covers the wafer W on the heating unit 20 with a communication portion formed in the outer peripheral region thereof connecting the processing space S and the space outside the chamber 40A (more specifically, the space within the storage space V and outside the chamber 40A). The chamber 40A includes, for example, a holding portion 130 and a cover portion 140.

[0150] The holding portion 130 holds the hot plate 22 of the heating portion 20 at a predetermined position. The holding portion 130 includes, for example, a supporting bottom wall 132 and a peripheral wall portion 134. The supporting bottom wall 132 is formed in the shape of a circular plate having a diameter substantially the same as that of the hot plate 22. The supporting bottom wall 132 is arranged so as to be opposite (in contact with) the back surface on the opposite side of the mounting surface 22a of the hot plate 22 and supports the back surface. The peripheral wall portion 134 is formed to extend upward from the outer edge of the supporting bottom wall 132. The peripheral wall portion 134 is formed in the shape of a circular ring and has a height substantially the same as the thickness of the hot plate 22. The peripheral wall portion 134 surrounds the hot plate 22. For example, the inner peripheral surface of the peripheral wall portion 134 is opposite to the outer peripheral surface of the hot plate 22. A gap may be formed between the inner peripheral surface of the peripheral wall portion 134 and the outer peripheral surface of the hot plate 22.

[0151] The cover 140 is positioned so that a gap g is formed between it and the holding portion 130 when forming the processing space S, thereby covering the wafer W on the heating portion 20 from above. The cover 140 includes, for example, a top plate 142 and side walls 144. The top plate 142 is formed similarly to the top plate 42 described above. Specifically, the release head 52 of the gas release portion 50 is disposed within the top plate 142.

[0152] The side wall 144 is formed to extend downward from the outer edge of the top plate 142 in the same manner as the above-mentioned side wall 44. The side wall 144 is formed in an annular shape and surrounds the placement surface 22a. Figure 13 FIG. 1 shows an example of the arrangement of the cover 140 when forming the processing space S. In this arrangement, the lower end surface 144a of the side wall 144 faces the upper end surface of the peripheral wall 134 of the holding portion 130, while being adjacent thereto. Specifically, a gap g is formed between the lower end surface 144a of the side wall 144 and the upper end surface of the peripheral wall 134. This gap g serves as a communication portion connecting the processing space S with the space outside the chamber 40A.

[0153] The inner peripheral surface 144b of the side wall 144 is inclined with respect to the vertical direction as it approaches the top plate 42 from the lower end of the side wall 144, so that the distance from the center (central axis Ax) of the top plate 42 in the horizontal direction decreases. In this case, the inner diameter of the side wall 144 decreases as it approaches the top plate 42 from the lower end of the side wall 144.

[0154] The cover 140 is provided in the housing 198 in a manner that allows it to move in the vertical direction. The chamber drive 48 of the heat treatment unit U20 moves the cover 140 in the vertical direction. The chamber drive 48 lowers the cover 140 until the side wall 144 of the cover 140 is close to the peripheral wall 134, thereby forming the processing space S using the chamber 40A (the chamber 40A becomes closed). The chamber drive 48 raises the cover 140 so that the side wall 144 of the cover 140 is separated from the peripheral wall 134, thereby opening the space above the hot plate 22 to the space outside the chamber 40A (the chamber 40A becomes open).

[0155] The exhaust portion 60A is different from the exhaust portion 60 of the first embodiment in that it includes an outer peripheral exhaust portion 70A instead of the outer peripheral exhaust portion 70. Figure 13 The central exhaust section 80 of the exhaust section 60A is shown as an example having a plurality of exhaust holes 82 (central exhaust holes). Similar to the peripheral exhaust section 70, the peripheral exhaust section 70A exhausts gas within the processing space S from a peripheral region outside the periphery of the wafer W supported by the heating section 20. The peripheral exhaust section 70A includes a plurality of first exhaust holes 172 and a plurality of second exhaust holes 174 provided outside the release head 52 of the gas release section 50.

[0156] A plurality of first exhaust holes 172 are provided in the side wall 144 of the cover portion 140 and are opened on the inclined inner peripheral surface 144b of the side wall 144. Figure 14 As shown, the plurality of first exhaust holes 172 may be arranged in a ring outside the top plate 142. In addition, the plurality of first exhaust holes 172 may be provided in the top plate 142 similarly to the exhaust holes 72 and open at the outer periphery of the bottom surface of the top plate 142.

[0157] Multiple second exhaust holes 174 (multiple peripheral exhaust holes) are provided in the side wall 144 of the cover 140 and open at the lower end surface 144a of the side wall 144. When the chamber 40A is closed, the multiple second exhaust holes 174 open in the gap g between the cover 140 (side wall 144) and the retaining portion 130 (peripheral wall portion 134). Alternatively, the multiple second exhaust holes 174 may be arranged in a ring shape outside the multiple first exhaust holes 172. The height of the second exhaust holes 174 is lower than that of the first exhaust holes 172 and lower than that of the exhaust holes 82 of the central exhaust portion 80.

[0158] The first exhaust holes 172 and the second exhaust holes 174 are connected to an exhaust pump via an exhaust duct 176. The exhaust duct 176 can be formed so that the exhaust flow paths connected to each of the plurality of first exhaust holes 172 and each of the plurality of second exhaust holes 174 are merged into a single flow path within the cover portion 140. The peripheral exhaust portion 70A having the above structure exhausts gas within the processing space S through the second exhaust holes 174 opening in the gap g and the gap g, and exhausts gas within the processing space S through the first exhaust holes 172. Alternatively, the peripheral exhaust portion 70A may not have the plurality of first exhaust holes 172 and may exhaust gas within the processing space S through the second exhaust holes 174 and the gap g.

[0159] The control unit 104 of the control device 100 can make the heat treatment unit U20 of the second embodiment perform the heat treatment process similarly to the heat treatment process in the heat treatment unit U2 of the first embodiment. Figure 7 In this case, in step S21, as shown in FIG. Figure 15 As shown in (a), the control unit 104 raises the support pins 32 by the lifting drive unit 34 after the heat treatment so that the wafer W is close to the top plate 142. In step S23 (after the second predetermined time has passed), as shown in FIG. Figure 15 As shown in (b), the control unit 104 controls the chamber driver 48 to switch the chamber 40A from a closed state to an open state. For example, the control unit 104 uses the chamber driver 48 to raise the lid 140, separating the lid 140 of the chamber 40A from the holder 130. In the heat treatment process of the second embodiment, the raising and lowering operation of the lid 140 is equivalent to the raising and lowering operation of the chamber 40 in the first embodiment.

[0160] Alternatively, during the processing of step S21, the control unit 104 controls the lifting drive unit 34 to raise the wafer W to a position higher than the second exhaust hole 174. Specifically, the standby position between the processing position where the wafer W is heated and the transfer position where the wafer W is transferred into and out of the chamber 40A may be higher than the second exhaust hole 174 when the chamber 40A is closed. In this case, the back surface of the wafer W positioned in the standby position, opposite to the front surface where the coating is formed, may be positioned higher than the opening edge of the second exhaust hole 174. Furthermore, the back surface of the wafer W positioned in the standby position may be positioned below or above the lowest portion of the opening edge of the first exhaust hole 172.

[0161] Here, refer to Figure 16 and Figure 17 , an example of the details of the heating unit 20 will be described. Figure 16 As shown, the heating unit 20 may include a heat plate 22, a plurality of gap pins 182, and suction holes 184. As described above, the heat plate 22 has a built-in heat plate heater 24. Therefore, the heat plate 22 uses the heat plate heater 24 as a heat source to generate heat for heating the wafer W to be processed. The placement surface 22a (main surface) of the heat plate 22 faces the back surface of the wafer W when the wafer W is supported by the heating unit 20.

[0162] A plurality of gap pins 182 are provided on the mounting surface 22a of the hot plate 22. The gap pins 182 are protrusions that protrude upward from the mounting surface 22a. When a wafer W to be processed is placed on the mounting surface 22a, the plurality of gap pins 182 support the wafer W by forming a gap between the mounting surface 22a and the wafer W (the back surface of the wafer W).

[0163] The suction holes 184 attract the wafer W arranged on the plurality of gap pins 182. The suction holes 184 are arranged in a manner that penetrates the hot plate 22 in the thickness direction (the direction perpendicular to the mounting surface 22a) and open on the mounting surface 22a. The suction holes 184 are open in the gap (space) between the back side of the wafer W and the mounting surface 22a when the wafer W is supported by the plurality of gap pins 182. In addition, the heating section 20 may include a plurality of suction holes 184. The plurality of suction holes 184 are respectively connected to the suction pump via the suction passage 186. Through the suction of the suction pump, an attraction force is generated on the back side of the wafer W in the direction close to the mounting surface 22a in the gap between the back side of the wafer W and the mounting surface 22a. The back side of the wafer W on the plurality of gap pins 182 is attracted by the plurality of suction holes 184, thereby correcting (eliminating) the warping of the wafer W.

[0164] Figure 17The diagram schematically illustrates an example of the arrangement of the plurality of gap pins 182 and the plurality of suction holes 184 when viewing the mounting surface 22a of the hot plate 22 from above. The plurality of gap pins 182 include a first group of gap pins 182 arranged in an area near each of the plurality of suction holes 184 (hereinafter referred to as the "suction area SR"), and a second group of gap pins 182 arranged in an area (non-suction area) outside of the suction area SR. The suction area SR is an area facing a portion of the back surface of the wafer W that is affected by the suction force from the suction holes 184, and is set to, for example, a radius ranging from approximately 3 to 20 times the radius of the suction holes 184. Alternatively, the suction area SR may be set to a radius ranging from approximately 1 / 10 to 1 / 3 the radius of the wafer W.

[0165] The number of gap pins 182 of the first group per unit area in the suction region SR is greater than the number of gap pins 182 of the second group per unit area in the non-suction region outside the suction region SR. The sizes of the plurality of gap pins 182 (the area of ​​the region surrounded by the outer edges of the gap pins 182 when viewing the support surface 22a from above) can be substantially the same. In this case, when viewing the support surface 22a from above, the proportion of the gap pins 182 of the first group in the suction region SR (the proportion of the area of ​​the gap pins 182 of the first group relative to the total area of ​​the suction region SR) is greater than the proportion of the gap pins 182 of the second group in the non-suction region. In the above configuration, the spacing between adjacent gap pins 182 in the suction region SR is smaller than the spacing between adjacent gap pins 182 in the non-suction region.

[0166] The processing module 11 may also have two heat treatment units that perform heat treatment under different heat treatment conditions. For example, the processing module 11 may have heat treatment units U21 and U22 that perform heat treatment under different heat treatment conditions. The heat treatment units U21 and U22 are each constructed in the same manner as the heat treatment unit U20 except for a portion of their structure. The heating temperature of the wafer W during the heat treatment performed by the heat treatment unit U21 (first heat treatment unit) may be higher than the heating temperature of the wafer W during the heat treatment performed by the heat treatment unit U22 (second heat treatment unit). When the heating temperature is high during the heat treatment, there is a tendency that the stress inside the wafer W (more specifically, the stress having a component along the surface of the wafer W) generated by the thermal expansion of the wafer W accompanying the heating becomes greater. Therefore, in the heat treatment units U21 and U22, the number of gap pins 182 is adjusted according to the heating temperature of the heat treatment.

[0167] Specifically, if Figure 18 (a) and Figure 18As shown in (b), the heating section 20 of the heat treatment unit U21 and the heating section 20 of the heat treatment unit U22 are configured so that the number (total number) of gap pins 182 is different from each other. The heating section 20 of the heat treatment unit U21, which performs heat treatment at a high heating temperature, has a greater number (total number) of gap pins 182 than the heating section 20 of the heat treatment unit U22, which performs heat treatment at a low heating temperature. As a result, the difference in the load (the load per gap pin 182) applied to each gap pin 182 due to stress within the wafer W caused by thermal expansion is reduced between the heat treatment units U21 and U22.

[0168] Instead of or in addition to the heating temperature during heat treatment, the suction force (the amount of gas drawn in per unit time) of the gas from the suction holes 184 may be different between the heat treatment in the heat treatment unit U21 and the heat treatment in the heat treatment unit U22. More specifically, the suction force applied to the wafer W from the suction holes 184 in the heating section 20 of the heat treatment unit U21 may be greater than the suction force applied to the wafer W from the suction holes 184 in the heating section 20 of the heat treatment unit U22. When the suction force applied from the suction holes 184 is greater, there is a tendency for the stress generated within the wafer W (stress having a component along the surface of the wafer W) to increase as the warpage of the wafer W is eliminated by suction. Therefore, in the heat treatment units U21 and U22, the number of gap pins 182 is adjusted according to the suction force from the suction holes 184.

[0169] The number of gap pins 182 possessed by the heating section 20 of the heat treatment unit U21 that performs heat treatment under a state where a strong attraction force is applied to the wafer W is greater than the number of gap pins 182 possessed by the heating section 20 of the heat treatment unit U22 that performs heat treatment under a state where a weak attraction force is applied to the wafer W. Therefore, between the heat treatment unit U21 and the heat treatment unit U22, the difference in load on each gap pin 182 due to the stress inside the wafer W generated by the elimination of the warpage caused by attraction becomes smaller. In addition, it is also possible that in each heating section 20 of the heat treatment units U21 and U22, Figure 17 Similarly to the illustrated arrangement, the number of gap pins 182 per unit area in the region near the suction hole 184 is greater than the number of gap pins 182 per unit area in the region other than the region near the suction hole 184 .

[0170] [Effects of the Second Embodiment]

[0171] In the coating and developing apparatus 2 of the second embodiment including the heat treatment units U20 , U21 , and U22 , similarly to the coating and developing apparatus 2 of the first embodiment, sublimates can be efficiently recovered and the thickness uniformity of the film to be heat treated can be improved.

[0172] In the second embodiment described above, the peripheral exhaust section 70A includes peripheral exhaust holes (second exhaust holes 174) for exhausting the processing space S. The control device 100 controls the substrate lifting section 30 so that when the wafer W is brought close to the top plate 142, the wafer W is raised to a position higher than the peripheral exhaust holes. In this case, when the wafer W is brought close to the top plate 142, the airflow outward from the surface of the wafer W accompanying the exhaust through the peripheral exhaust holes becomes weaker. As a result, the possibility of sublimates flowing outside the wafer W is reduced, enabling more efficient recovery of the sublimates.

[0173] In the second embodiment described above, the chamber 40A covers the wafer W on the heating unit 20 with a connection portion (gap g) formed in the outer peripheral region connecting the processing space S and the space outside the chamber 40A. The peripheral exhaust portion 70A includes peripheral exhaust holes (second exhaust holes 174) opened in the connection portion, and the processing space S is exhausted through the peripheral exhaust holes and the connection portion. In this case, it is possible to prevent sublimates from leaking into the space outside the chamber through the connection portion. Specifically, sublimates flowing from the processing space S to the space outside the chamber pass through the connection portion and are therefore exhausted through the connection portion, thereby reducing the possibility of leakage of sublimates.

[0174] In the second embodiment described above, chamber 40A includes a holder 130 that holds heating section 20 and a cover 140. Cover 140 is positioned with a gap g formed between it and holder 130 so as to cover wafer W on heating section 20 from above. The gap g between holder 130 and cover 140 functions as the aforementioned communication portion. In this case, the holder and cover do not come into contact with each other during the opening and closing of chamber 40A, thereby suppressing the generation of particles associated with the opening and closing of chamber 40A.

[0175] In the second embodiment described above, the heating unit 20 includes a heat plate 22 that generates heat for heating a wafer W; a plurality of gap pins 182 disposed on the main surface (mounting surface 22a) of the heat plate 22 to support the wafer W by forming a gap between the wafer W and the main surface; and suction holes 184 opened in the main surface to attract the wafer W positioned on the plurality of gap pins 182. The plurality of gap pins 182 includes a first group of gap pins 182 disposed in a suction region SR of the main surface near the suction holes 184; and a second group of gap pins 182 disposed in a non-suction region of the main surface outside the suction region SR. The number of gap pins 182 of the first group per unit area of ​​the suction region SR is greater than the number of gap pins 182 of the second group per unit area of ​​the non-suction region. Because the suction force from the suction holes 184 is greater in the suction region SR, the stress generated within the wafer W tends to increase the load applied to a single gap pin 182. In the above configuration, by increasing the number of gap pins 182 per unit area in the first group of gap pins 182 in suction region SR, it is possible to suppress an increase in the load applied to a single gap pin 182. The load applied to a single gap pin 182 is a major cause of friction at the contact portion between wafer W and gap pin 182. Therefore, by suppressing the increase in load, it is possible to suppress the generation of particles from wafer W and gap pin 182 due to this friction.

[0176] In the second embodiment described above, the coating and developing apparatus 2 includes multiple thermal processing units. The heating section 20 includes a heat plate 22 that generates heat for heating the wafer W; multiple gap pins 182 disposed on the main surface (mounting surface 22a) of the heat plate 22 to support the wafer W by forming a gap between the wafer W and the main surface; and suction holes 184 opened in the main surface to attract the wafer W positioned on the multiple gap pins 182. The multiple thermal processing units include a first thermal processing unit (thermal processing unit U21) and a second thermal processing unit (thermal processing unit U22). The heating temperature of the wafer W during thermal processing performed by the first thermal processing unit is higher than the heating temperature of the wafer W during thermal processing performed by the second thermal processing unit. The number of gap pins 182 included in the heating section 20 of the first thermal processing unit is greater than the number of gap pins 182 included in the heating section 20 of the second thermal processing unit. When the heating temperature of the wafer W during thermal processing is high, the load applied to each gap pin 182 tends to increase due to stress generated within the wafer W due to thermal expansion of the wafer W. In the above configuration, by increasing the number of gap pins 182 included in the heating portion 20 of the first heat treatment unit that performs heat treatment at a high heating temperature, an increase in the load applied to one gap pin 182 can be suppressed.

[0177] In the second embodiment described above, the coating and developing apparatus 2 may include multiple thermal processing units. The heating section 20 includes a heat plate 22 that generates heat for heating the wafer W; multiple gap pins 182 disposed on the main surface (mounting surface 22a) of the heat plate 22 to support the wafer W by forming a gap between the wafer W and the main surface; and suction holes 184 opened in the main surface to attract the wafer W positioned on the multiple gap pins 182. The multiple thermal processing units include a first thermal processing unit (thermal processing unit U21) and a second thermal processing unit (thermal processing unit U22). The suction force applied to the wafer W from the suction holes 184 of the first thermal processing unit is greater than the suction force applied to the wafer W from the suction holes 184 of the second thermal processing unit. The number of gap pins 182 included in the heating section 20 of the first thermal processing unit is greater than the number of gap pins 182 included in the heating section 20 of the second thermal processing unit. When the suction force from the suction holes 184 is greater, the load applied to each gap pin 182 tends to increase due to stress generated within the wafer W. In the above configuration, by increasing the number of gap pins 182 included in the heating portion 20 of the first heat treatment unit that performs heat treatment under a high suction force, an increase in the load applied to one gap pin 182 can be suppressed.

[0178] [Third embodiment]

[0179] Below, refer to Figures 19 to 21 The substrate processing system of the third embodiment will be described. The substrate processing system of the third embodiment is different from the substrate processing system 1 of the first embodiment in that it includes a coating and developing device 2B instead of the coating and developing device 2. Figure 19 As shown, the processing block 5 of the coating and developing apparatus 2B includes two processing modules 11, two processing modules 12, and two storage units 16 instead of the processing modules 11, 12, 13, and 14. The storage units 16 accommodate, for example, auxiliary equipment (units) required for processing the wafers W in the processing modules 11 and 12. Examples of the auxiliary equipment include a unit for supplying a processing liquid to the coating units U1 and U3 and a unit for supplying a gas to the thermal processing units U2.

[0180] The coating and developing device 2B includes a gas supply unit 200 housed in the housing portion 16, and the gas supply unit 200 supplies gas to each thermal treatment unit U2 of the process module 11. Figure 19As shown, the gas supply unit 200 may also be disposed within the lower storage section 16. Since the gas supply unit 200 is disposed within the storage section 16, the space within the process module 11 housing the thermal treatment units U2 is configured as a separate space from the storage section 16. For example, the space housing the thermal treatment units U2 may be separated from the space housing the gas supply unit 200 by using a base plate supporting each unit of the process module 11.

[0181] The gas supply unit 200 supplies a gas (hereinafter referred to as "adjusted gas") adjusted so that the concentration of one component reaches a predetermined value to the gas release portion 50 of each thermal processing unit U2. In this case, the gas release portion 50 releases the adjusted gas from a plurality of release holes 54 toward the surface Wa of the wafer W. As the adjusted gas, for example, a gas with an adjusted oxygen concentration can be cited. In addition, as the adjusted gas, a gas with an adjusted concentration of a component such as nitrogen, ammonia, or argon can also be used. The above-mentioned predetermined value of the concentration of a component can be predetermined, for example, based on the target value of the concentration of the component in the processing space S during the thermal processing.

[0182] The gas supply unit 200 can generate a regulated gas by mixing a gas (first gas) containing a component whose concentration is to be regulated (hereinafter referred to as the "regulated component") with a gas (second gas) containing a component different from the regulated component. For example, the gas supply unit 200 can generate a regulated gas whose oxygen concentration is regulated to a predetermined value by mixing oxygen gas (high-concentration oxygen gas) mainly composed of oxygen and nitrogen gas (high-concentration nitrogen gas) mainly composed of nitrogen.

[0183] In one example, Figure 19 As shown, oxygen is supplied to the gas supply unit 200 from an oxygen gas source 202 via a gas supply passage 204, and nitrogen is supplied to the gas supply unit 200 from a nitrogen gas source 206 via a gas supply passage 208. The gas supply unit 200 mixes the oxygen from the gas source 202 and the nitrogen from the gas source 206 within the storage unit 16 so that the oxygen concentration reaches a predetermined value, thereby generating a regulated gas. The gas supply unit 200 then supplies the regulated gas to the release head 52 via a gas supply passage 210 and a supply passage 56 branching from the gas supply passage 210. Because the regulated gas is a mixture of multiple gases, the concentration of the regulated component (e.g., oxygen concentration) in the regulated gas flowing through the gas supply passage 210 is lower than the concentration of the regulated component (e.g., oxygen concentration) in the oxygen gas flowing through the gas supply passage 204.

[0184] The control unit 104 of the control device 100 can be used with Figure 7 The heat treatment process shown is the same process as that of the heat treatment unit U2 of the third embodiment. Figure 20This is a flowchart illustrating an example of a heat treatment process performed in the heat treatment unit U2 of the third embodiment. First, while maintaining the hot plate 22 at a predetermined temperature and exhausting the heat from the central exhaust unit 80, the control unit 104 executes steps S41 to S44, similar to steps S11 to S14. Upon executing step S41, the release of a regulated gas with an adjusted concentration of a regulating component begins from the gas release unit 50. The following example illustrates the use of a regulated gas with an adjusted oxygen concentration.

[0185] Next, the control unit 104 controls the lift drive unit 34 to lower the wafer W (step S45). Unlike the process in step S15 described above, the control unit 104 controls the lift drive unit 34 to lower the wafer W to a position set between the processing position for heating and the transfer position for loading and unloading the wafer W (for example, the aforementioned standby position). Furthermore, at this point, the processing space S is not yet formed, so the oxygen concentration in the space above the hot plate 22 is approximately the same as the oxygen concentration in the storage space V within the housing 198 (for example, the oxygen concentration of the atmosphere).

[0186] Next, the control unit 104 executes steps S46 and S47 in the same manner as steps S16 and S17. The control unit 104 then waits until a fourth predetermined time has elapsed, starting from the completion of the descent of the chamber 40 (the start of the formation of the processing space S). The fourth predetermined time is stored in the storage unit 102. The fourth predetermined time is set so that the oxygen concentration in the processing space S approaches the target concentration Tc.

[0187] Figure 21 An example of the time variation of the oxygen concentration in the processing space S (the space above the hot plate 22) is shown. Figure 21 In the graph shown, step S47 (forming the processing space S) is executed at time t0. The time from time t0 to time t1 corresponds to the fourth predetermined time, and at time t1 the oxygen concentration in the processing space S becomes substantially equal to the target concentration Tc.

[0188] Next (after the fourth predetermined time has passed), the control unit 104 controls the lift drive unit 34 to further lower the wafer W (step S49). Specifically, the control unit 104 uses the lift drive unit 34 to lower the support pins 32 supporting the wafer W, placing the wafer W on the mounting surface 22a of the hot plate 22. This starts heating the wafer W to be processed.

[0189] Next, the control unit 104 waits until a first predetermined time has elapsed from the start of heating the wafer W, similar to step S18 (step S50). While the control unit 104 waits until the first predetermined time has elapsed, the first state of exhausting the processing space S from the peripheral exhaust unit 70 continues. During the first predetermined time, exhaust is performed from the peripheral area, not the central area, and gas with an adjusted oxygen concentration is released from the gas release unit 50 through the plurality of release holes 54 onto the surface of the wafer W on the hot plate 22.

[0190] exist Figure 21 In the graph, the time from time t1 to time t2 corresponds to the first predetermined time. During the time (period) from time t1 to time t2, the oxygen concentration in processing space S is maintained substantially constant. That is, the concentration of the regulated gas supplied from gas supply unit 200 is set so that the oxygen concentration in processing space S is maintained at target concentration Tc in the first state in which exhaust from the peripheral area is being performed.

[0191] Next, the control unit 104 switches the exhaust from the central exhaust unit 80 from the stopped state to the exhaust state (step S51) in the same manner as step S19. As a result, the exhaust state in the chamber 40 is switched from the first state to the second state in which the peripheral area and the central area are exhausted. As the exhaust volume from the exhaust unit 60 increases with the switch to the second state, the oxygen concentration in the processing space S is affected by the oxygen concentration of the gas outside the processing space S. For example, Figure 21 As shown, after time t2 , the oxygen concentration of the gas in the processing space S changes (decreases) to a level that is substantially the same as the oxygen concentration in the space outside the chamber 40 .

[0192] Next, the control unit 104 executes steps S52 to S57 in the same manner as steps S20 to S25. Figure 21 In the graph, step S53 is executed at time t3 to terminate heating of the wafer W, and step S55 is executed at time t4 to switch the chamber 40 to the open state. After time t2, the oxygen concentration in the processing space S (the space above the hot plate 22) is maintained at a substantially constant level, approximately equal to the oxygen concentration in the space outside the chamber 40.

[0193] After step S57, the control unit 104 repeatedly performs the series of processes from step S44 to step S57. This allows sequential heat treatment of multiple wafers W. In the above example, the control unit 104 releases the conditioned gas from the gas release unit 50 throughout the entire heat treatment period for a single wafer W. Alternatively, the control unit 104 may cause the gas release unit 50 to release the conditioned gas during the entire heating period for the target wafer W, or during the first half of the heating period, and not cause the gas release unit 50 to release the conditioned gas during periods other than the aforementioned periods. Alternatively, the first half of the heating period for the wafer W may correspond to the period during which the first state, in which peripheral exhaust is performed instead of central exhaust, continues.

[0194] [Effects of the Third Embodiment]

[0195] In the coating and developing apparatus 2B of the third embodiment, similarly to the coating and developing apparatus 2 of the first embodiment, it is possible to efficiently recover sublimates and improve the uniformity of the film thickness of the coating to be heat-treated.

[0196] In the third embodiment described above, the coating and developing device 2B further includes a gas supply unit 200, which mixes a first gas containing one component and a second gas containing another component to generate a regulated gas adjusted to a concentration of the one component at a predetermined value, and supplies the regulated gas to the gas release portion 50. The gas release portion 50 releases the regulated gas onto the surface of the wafer W. The gas supply unit 200 is arranged in another space separated from the space in which the heat treatment unit U2 is arranged. In this case, while the wafer W is being heated, the concentration of one component contained in the gas surrounding the wafer W can be kept approximately constant, and the quality of the film after the heat treatment can be adjusted. In addition, the influence of the heat generated during the heat treatment on the components for generating the regulated gas (for example, the piping for the first gas and the second gas) can be reduced.

[0197] In the third embodiment described above, the control device 100 releases the conditioned gas from the plurality of release holes 54 to the gas release portion 50 at least in the first half of the period in which the heating portion 20 heats the wafer W. Since film formation is performed during the first half of the period in which the wafer W is heated, the quality of the film formed using the conditioned gas can be more reliably adjusted.

[0198] Based on the above description, various embodiments of the present invention have been described in this specification for illustrative purposes. It should be understood that various changes can be made without departing from the scope and spirit of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and spirit are given by the appended claims.

Claims

1. A substrate processing device, characterized in that: include: a heat treatment unit for performing heat treatment on the substrate having the film formed thereon; and a control unit for controlling the heat treatment unit, The heat treatment unit comprises: a heating portion that supports and heats the substrate; a chamber covering the substrate supported by the heating portion; a gas release portion having a release head portion formed with a plurality of release holes, the gas release portion releasing gas from the plurality of release holes toward the surface of the substrate, wherein the plurality of release holes are dispersedly provided on a surface opposite to the substrate supported by the heating portion; a peripheral exhaust portion for exhausting the processing space in the chamber from a peripheral region outside the periphery of the substrate supported by the heating portion; and a central exhaust portion for exhausting the processing space from a central region located inside the periphery of the substrate supported by the heating portion; The chamber covers the substrate on the heating portion in a state where a communication portion connecting the processing space and a space outside the chamber is formed in the outer peripheral region. The peripheral exhaust portion includes a peripheral exhaust hole opened in the communicating portion, and the processing space is exhausted through the peripheral exhaust hole and the communicating portion. The chamber comprises: a holding portion that holds the heating portion; and a cover portion, the cover portion being arranged to cover the substrate on the heating portion from above with a gap formed between the cover portion and the holding portion; The gap between the holding portion and the cover portion functions as the communication portion.

2. The substrate processing device according to claim 1, wherein: The heat treatment unit further includes an exhaust switching portion configured to switch between a first state and a second state, wherein the first state exhausts the processing space from the peripheral exhaust portion, and the second state exhausts the processing space from at least the central exhaust portion. The control unit controls the exhaust switching portion to release the gas from the plurality of release holes using the gas release portion and switch from the first state to the second state.

3. The substrate processing device according to claim 1, wherein: The heat treatment unit further comprises: a substrate lifting unit for lifting the substrate; and an opening / closing switching portion for switching between a closed state in which the processing space is formed by the chamber and an open state in which the chamber is separated from the heating portion compared to the closed state, The chamber includes a top plate provided with the release head, The control unit controls the substrate lifting unit to move the substrate upward from the heating unit to approach the top plate. The control unit controls the open / close switching portion to switch from the closed state to the open state after the substrate is brought close to the top plate.

4. The substrate processing device according to claim 3, wherein: The peripheral exhaust portion has peripheral exhaust holes for exhausting the processing space. The control unit controls the substrate lifting unit so that the substrate is lifted to a position higher than the peripheral exhaust hole when the substrate is brought close to the top plate.

5. The substrate processing device according to claim 1, wherein: The heat treatment unit sequentially performs the heat treatment on a plurality of substrates including the substrate. The control unit controls the gas release unit to continue releasing the gas from the plurality of release holes while the substrate to be processed is being replaced.

6. The substrate processing device according to claim 1, wherein: The central exhaust portion includes a central exhaust hole provided on the discharge head in a manner of opening toward the processing space. The gas release portion further includes a nozzle portion for releasing the gas toward a lower portion of the central exhaust hole.

7. The substrate processing apparatus according to any one of claims 1 to 6, wherein: Also includes: a gas supply unit that mixes a first gas containing one component with a second gas containing another component to generate a regulated gas regulated so that the concentration of the one component reaches a predetermined value, and supplies the regulated gas to the gas release portion; The gas release portion releases the adjustment gas as the gas toward the surface of the substrate. The gas supply unit is arranged in another space separated from the space where the heat treatment unit is arranged.

8. The substrate processing device according to claim 7, wherein: The control unit causes the gas release unit to release the conditioning gas at least in the first half of a period in which the heating unit heats the substrate.

9. The substrate processing apparatus according to claim 7, wherein: Also includes: The heat treatment unit sequentially performs the heat treatment on a plurality of substrates including the substrate. During replacement of the substrate to be processed, the control unit causes the gas release portion to continuously release the gas from the plurality of release holes while the processing space is connected to the space outside the processing space, thereby causing the concentration of the component in the processing space to become closer to the concentration of the component in the atmosphere of the outside space than the specified value.

10. The substrate processing apparatus according to any one of claims 1 to 6, wherein: Also includes: The heating unit includes: a hot plate for generating heat for heating the substrate; a plurality of gap pins provided on the main surface of the heat plate, the pins supporting the substrate in a manner forming a gap between the substrate and the main surface; and The suction holes opened on the main surface suck the substrate arranged on the plurality of gap pins. The plurality of gap pins include: a first group of gap pins arranged in a suction area of ​​the main surface near the suction hole; and a second group of gap pins arranged in a non-suction area of ​​the main surface other than the suction area. The number of the first group of gap pins per unit area of ​​the suction region is greater than the number of the second group of gap pins per unit area of ​​the non-suction region.

11. The substrate processing device according to any one of claims 1 to 6, wherein: having a plurality of heat treatment units including the heat treatment unit, The heating unit includes: a hot plate for generating heat for heating the substrate; a plurality of gap pins provided on the main surface of the heat plate, the pins supporting the substrate in a manner forming a gap between the substrate and the main surface; and The suction holes opened on the main surface suck the substrate arranged on the plurality of gap pins. The plurality of heat treatment units include a first heat treatment unit and a second heat treatment unit, The heating temperature of the substrate in the heat treatment performed by the first heat treatment unit is higher than the heating temperature of the substrate in the heat treatment performed by the second heat treatment unit, The number of the plurality of gap pins included in the heating portion of the first heat treatment unit is greater than the number of the plurality of gap pins included in the heating portion of the second heat treatment unit.

12. The substrate processing apparatus according to claim 1, wherein: having a plurality of heat treatment units including the heat treatment unit, The heating unit includes: a hot plate for generating heat for heating the substrate; a plurality of gap pins provided on the main surface of the heat plate, the pins supporting the substrate in a manner forming a gap between the substrate and the main surface; and The suction holes opened on the main surface suck the substrate arranged on the plurality of gap pins. The plurality of heat treatment units include a first heat treatment unit and a second heat treatment unit, The suction force applied to the substrate from the suction holes of the first heat treatment unit is greater than the suction force applied to the substrate from the suction holes of the second heat treatment unit. The number of the plurality of gap pins included in the heating portion of the first heat treatment unit is greater than the number of the plurality of gap pins included in the heating portion of the second heat treatment unit.

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