Substrate processing equipment

Abstract

A substrate processing that can minimize the influence of the filling gas in the lower space on substrate processing, comprising: a substrate support unit; a processing unit located on the substrate support unit; and an exhaust unit connected to a reaction space between the substrate support unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate support unit meet each other outside the reaction space.

Description

[0001] Cross - reference to related applications

[0002] This application claims the benefit of U.S. Application No. US62 / 942,046, filed on November 29, 2019, with the United States Patent and Trademark Office, under 35 U.S.C.§119, the entire content of which is incorporated herein by reference. Technical field

[0003] One or more embodiments relate to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having an improved exhaust structure. Background art

[0004] In a substrate processing apparatus, reaction gases introduced into a reaction space are exhausted to the outside through an exhaust space. However, some reaction gases are introduced to the bottom of a heating block, particularly the bottom of a reactor, on which a pedestal such as a substrate mounting portion is installed. In particular, when a heterogeneous gas is supplied, reaction by - products are generated in the lower space of the chamber, and these reaction by - products become contaminants for the processed substrate and reduce the yield of the apparatus. Additionally, when a highly corrosive cleaning gas is used to remove the reaction by - products, there is a problem that chamber components are damaged and thus the lifespan of the substrate processing apparatus is shortened.

[0005] To prevent the problem that reaction gases supplied to the reaction space flow into the bottom of the reactor, gas is supplied from the bottom of the reactor. This gas is also referred to as a filling gas because it fills the bottom of the reactor, and an inert gas such as Ar or N 2 is typically used. The filling gas balances the pressure between the reaction space on the substrate mounting portion and the lower space of the reactor to prevent reaction gases from entering the lower space of the reactor. A substrate processing apparatus configuration using such a filling gas is disclosed in U.S. Patent Publication No. 2018 - 0155836. Summary of the invention

[0006] One or more embodiments include a substrate processing apparatus that can minimize the impact of the filling gas on substrate processing while achieving pressure balance between the reaction space and the lower space of the reactor using the filling gas.

[0007] Additional aspects will be set forth in part in the description which follows and in part will be obvious from the description, or may be learned by practice of the presented embodiments of the present disclosure.

[0008] According to one or more embodiments, a substrate processing apparatus includes: a substrate support unit; a processing unit on the substrate support unit; and an exhaust unit connected to a reaction space between the substrate support unit and the processing unit, wherein a first gas in the reaction space is transmitted to the exhaust unit through a first channel, a second gas in a lower space below the substrate support unit is transmitted to the exhaust unit through a second channel, and the first channel and the second channel can be joined to each other below the exhaust unit.

[0009] According to another example of the substrate processing apparatus, the exhaust unit may further include: a partition wall defining a side surface of the reaction space; an outer wall parallel to the partition wall; and a connecting wall extending to connect the partition wall to the outer wall, wherein a joining point where the first channel and the second channel are joined to each other may be below the partition wall.

[0010] According to an example of the substrate processing apparatus, the substrate processing apparatus may further include a flow control ring disposed to surround the substrate support unit, wherein the first gas in the reaction space may be transmitted to the exhaust unit through a first surface of the flow control ring, and the second gas in a lower space below the substrate support unit may be transmitted to the exhaust unit through a second surface of the flow control ring.

[0011] According to another example of the substrate processing apparatus, the flow control ring may be disposed to overlap at least a part of the exhaust unit below the exhaust unit.

[0012] According to another example of the substrate processing apparatus, the substrate processing apparatus may further include an outer ring disposed to surround the flow control ring, wherein the first channel may be between the exhaust unit and the flow control ring, and the second channel may be between the outer ring and the flow control ring.

[0013] According to another example of the substrate processing apparatus, the substrate processing apparatus may further include a support member configured to support the processing unit and the exhaust unit, and the outer ring may be located between the exhaust unit and the support member.

[0014] According to another example of the substrate processing apparatus, the substrate support unit may be configured to be vertically movable, and the flow control ring may be configured to move up and down with the vertical movement of the substrate support unit.

[0015] According to another example of the substrate processing apparatus, a corner portion adjacent to the joining point with the outer ring may include a first bending structure.

[0016] According to another example of the substrate processing apparatus, a corner portion of the exhaust unit may include a second bending structure, and the joining point may be between the first bending structure and the second bending structure.

[0017] According to another example of a substrate processing apparatus, the flow control ring may include: a first portion configured to overlap at least a portion of the substrate support unit; and a second portion extending from the first portion along a side surface of the substrate support unit.

[0018] According to another example of a substrate processing apparatus, the flow control ring may further include a third portion extending from the second portion to overlap at least a portion of the discharge unit.

[0019] According to another example of a substrate processing apparatus, the flow control ring may include: a first portion configured to overlap at least a portion of the outer ring; and a second portion extending from the first portion along a side surface of the substrate support unit.

[0020] According to another example of a substrate processing apparatus, the substrate support unit may be configured to be vertically movable, and when the substrate support unit moves up and down, the flow control ring may slide against the outer ring by the thrust of the substrate support unit.

[0021] According to another example of a substrate processing apparatus, the first portion of the flow control ring may include an uneven structure, and through the uneven structure, a second channel may be formed between the first portion of the flow control ring and the outer ring.

[0022] According to another example of a substrate processing apparatus, the second portion of the flow control ring may have a surface inclined with respect to the substrate support unit.

[0023] According to one or more embodiments, a substrate processing apparatus includes: a substrate support unit; a processing unit located on the substrate support unit; a discharge unit connected to a reaction space between the substrate support unit and the processing unit; and a ring disposed below the discharge unit to overlap at least a portion of the discharge unit, wherein a first gas in the reaction space may be transmitted to the discharge unit through a first surface of the ring, and a second gas in a lower space below the substrate support unit may be transmitted to the discharge unit through a second surface of the ring.

[0024] According to an example of a substrate processing apparatus, the first gas and the second gas may meet each other outside the reaction space.

[0025] According to one or more embodiments, a substrate processing apparatus includes: a substrate support unit; a processing unit located on the substrate support unit; and a discharge unit connected to a reaction space between the substrate support unit and the processing unit, wherein a first gas in the reaction space and a second gas in a lower space below the substrate support unit may meet each other outside the reaction space.

[0026] According to an example of a substrate processing apparatus, the first gas and the second gas may meet each other at a point below the discharge unit and outside the reaction space.

[0027] According to another example of a substrate processing apparatus, the discharge unit may include a partition wall defining a side surface of a reaction space, and the first gas and the second gas may be configured to meet each other outside a surface of the partition wall in contact with the reaction space. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The above and other aspects, features, and advantages of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:

[0029] Figures 1 to 2 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

[0030] Figures 3 to 5 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

[0031] Figure 6 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

[0032] Figures 7 to 8 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

[0033] Figures 9 to 11 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

[0034] Figures 12 to 14 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

[0035] Figure 15 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

[0036] Figure 16 is Figure 15 a partially enlarged view of the substrate processing apparatus.

[0037] Figure 17 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

[0038] Figure 18 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

[0039] Figure 19 is Figure 18 a partially enlarged view of the substrate processing apparatus.

[0040] Figures 20 to 21 is a view of a substrate processing apparatus according to some embodiments of the inventive concept.

[0041] Figure 22It is a diagram illustrating the ring self-alignment process as the heating block rises. And

[0042] Figure 23 is Figure 22 a view of the ring shown. Detailed Description of the Invention

[0043] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals always refer to like elements. In this regard, the embodiments may have different forms and should not be construed as limited to the description set forth herein. Accordingly, the embodiments are described below only by referring to the drawings to explain aspects of the present specification. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Expressions such as "at least one", when preceding a list of elements, modify the entire list of elements and not individual elements of the list.

[0044] The terms used herein are for the purpose of describing particular example embodiments only and are not intended to limit the present disclosure. As used herein, the singular forms "a", "an" and "the" may also be intended to include the plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "comprises", "has" and / or "includes" are used in this specification, the presence of the stated features, integers, steps, processes, components, parts and / or combinations thereof is specified, but one or more other features, integers, steps, processes, components, parts and / or combinations thereof are not excluded. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0045] It should be understood that although the terms first, second, etc. may be used herein to describe various components, parts, regions, layers and / or sections, these components, parts, regions, layers and / or sections should not be limited by these terms. These terms do not denote any order, quantity or importance, but are only used to distinguish one component, region, layer and / or section from another component, region, layer and / or section. Thus, without departing from the teachings of the example embodiments, the first component, part, region, layer or section discussed below may be referred to as the second component, part, region, layer or section.

[0046] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings, in which the embodiments of the present disclosure are schematically shown. In the drawings, variations from the shown shapes can be expected due to, for example, manufacturing techniques and / or tolerances. Accordingly, the embodiments of the present disclosure should not be construed as limited to the specific shapes of the regions shown herein, but may include, for example, shape deviations caused by the manufacturing process.

[0047] Figures 1 to 2View of a substrate processing apparatus according to some embodiments of the inventive concept. Figure 1 A substrate processing apparatus and a part of the substrate processing apparatus (a cross-section of a part where an opening of the discharge unit 120 is not formed) are shown. Figure 2 A substrate processing apparatus and another part of the substrate processing apparatus (a cross-section of a part where the opening OP of the discharge unit 120 is formed) are shown.

[0048] Referring Figure 1 and Figure 2 , the substrate processing apparatus may include a partition 100, a substrate support unit 150, a processing unit 110, a discharge unit 120, and at least one ring R. The substrate processing apparatus may include a reaction space 51 and a discharge space 55 connected to the reaction space 51.

[0049] The partition 100 is a chamber for accommodating the substrate support unit 150, and it may also be referred to as a chamber. In one embodiment, a reactor including the reaction space 51 is referred to as an inner chamber, and the overall structure of the substrate processing apparatus surrounding a plurality of reactors (e.g., four reactors) may be referred to as an outer chamber. A discharge line 18 may be provided in the partition 100. In some embodiments, the discharge line 18 may be formed to extend along the inner side of the sidewall of the partition 100. In one embodiment, the substrate processing apparatus includes a first surface and a second surface adjacent to the first surface, and the discharge line 18 may extend along the edge between the first surface and the second surface. In another embodiment, the discharge line 18 may be formed to extend along the inner side of the lower wall of the partition 100.

[0050] The processing unit 110 may be located on the substrate support unit 150 configured to support a substrate. The reaction space 51 may be defined between the substrate support unit 150 and the processing unit 110. The processing unit 110 may serve as a first cover defining the upper surface of the reaction space 51. In other words, the first cover on the substrate support unit may include at least one processing unit 110.

[0051] The processing unit 110 may include components that perform appropriate functions according to the function of the substrate processing apparatus. For example, when the substrate processing apparatus performs a deposition function, the processing unit 110 may include a reactant supplier (e.g., a showerhead assembly). In another embodiment, when the reactor performs a polishing function, the processing unit 110 may include a polishing pad.

[0052] The processing unit 110 may be a conductor and may serve as an electrode for generating plasma. That is, the processing unit 110 may serve as one of the electrodes for generating plasma. Hereinafter, the processing unit 110 in this manner (the manner of using the processing unit 110 as an electrode) will be referred to as a gas supply electrode.

[0053] The substrate support unit 150 may be configured to provide an area for an object to be processed (not shown), such as a semiconductor or display substrate, to be seated. The substrate support unit 150 may be supported by a driver (not shown) capable of vertical and rotational movement. In addition, the substrate support unit 150 may be a conductor and may be used as an electrode for generating plasma (i.e., the opposite electrode of the gas supply electrode).

[0054] The discharge unit 120 may be located between the processing unit 110 and the support TLD. The discharge unit 120 may extend to surround the reaction space 51. The gas in the reaction space 51 may be discharged to the discharge port 13 through the discharge unit 120.

[0055] In one embodiment, the discharge unit 120 may serve as a second cover that defines the side surface of the reaction space 51. The second cover including the discharge unit 120 may include a discharge space 55 connected to the reaction space 51. Accordingly, the discharge unit 120 may provide the discharge space 55. In addition, the discharge unit 120 may provide a space in which the processing unit 110 is accommodated. When the processing unit 110 is accommodated in the space, the processing unit 110 may be in contact with the discharge unit 120.

[0056] The discharge unit 120 may include a partition wall W between the reaction space 51 and the discharge space 55. The first surface (e.g., the outer surface) of the partition wall W may define the reaction space 51, and the second surface (i.e., the inner surface as the surface facing the first surface) of the partition wall W may define the discharge space 55. For example, the reaction space 51 may be defined by the first surface side of the partition wall W, the upper surface of the substrate support unit 150, and the lower surface of the processing unit 110 as the first cover. In other words, one side of the reaction space 51 may be defined by the partition wall W of the discharge unit 120.

[0057] The discharge unit 120 may provide a part of the space for the object to be processed. For example, when the substrate processing apparatus performs a deposition function, the reaction space 51 for deposition may be defined through the discharge unit 120. In addition, the discharge space 55 may be defined inside the discharge unit 120. The reaction space 51 may be connected to the discharge port 13 through the discharge space 55 of the discharge unit 120. More specifically, the gas in the reaction space 51 may be discharged to the discharge port 13 through the first channel C1, the discharge space 55, and the opening OP.

[0058] In the example, the discharge unit 120 may include a connection wall C and an outer wall O extending from the partition wall W. The outer wall O of the discharge unit 120 is arranged parallel to the partition wall W and may contact the support TLD. An opening OP may be formed in the outer wall O, and the discharge unit 120 and the discharge port 13 may be connected to each other through the opening OP. The connection wall C of the discharge unit 120 may extend to connect the partition wall W to the outer wall O. The connection wall C may provide a contact surface with the processing unit 110. The processing unit 110 as the first cover and the discharge unit 120 as the second cover may contact each other through the contact surface.

[0059] The support TLD may contact the discharge unit 120 to support the processing unit 110 and the discharge unit 120. The support TLD may be supported by the partition 100. As described above, the support TLD may be used as a top cover that is supported by the partition 100 to cover the outer chamber while supporting the processing unit 110 as the first cover and the discharge unit 120 as the second cover.

[0060] The support TLD may be between the partition 100 and a cover (e.g., the second cover including the discharge unit 120). Also, the support TLD may be between the partition 100 and the discharge port 13. The support TLD may include a path P of a discharge pipeline 18 that connects the discharge port 13 to the partition 100. In an additional embodiment, a sealing member (not shown) may be between the support TLD and the partition. The sealing member may extend along the path P or the circumference of the discharge pipeline 18 to prevent gas leakage from the path P to the discharge pipeline 18.

[0061] The at least one ring R may be provided to surround the substrate support unit 150. For example, the at least one ring R may include a flow control ring FCR. The flow control ring FCR may be below the discharge unit 120. More specifically, the flow control ring FCR may be arranged to overlap at least a part of the discharge unit 120 in the vertical direction. Due to this overlapping arrangement, a first channel C1 may be formed between the flow control ring FCR and the discharge unit 120. As a result, the first gas (e.g., source gas and / or reaction gas) in the reaction space 51 may be transported to the discharge space 55 of the discharge unit 120 through the first surface (e.g., the upper surface) of the flow control ring FCR.

[0062] More specifically, the partition wall W of the discharge unit 120 may provide a first channel C1 that connects the reaction space 51 to the discharge space 55. For example, the first channel C1 may be formed between the discharge unit 120 and the at least one ring R, particularly between the discharge unit 120 and the flow control ring FCR. The first channel C1 may be used as a channel between the reaction space 51 and the discharge space 55. Therefore, the reaction space 51 and the discharge space 55 may communicate with each other through the first channel C1 provided by the partition wall W.

[0063] The flow control ring FCR can be separated from the support member TLD to form a second channel C2. The flow control ring FCR can be laterally moved (i.e., slid against the substrate support unit 150) on the substrate support unit 150. By laterally moving to adjust the width or spacing of the second channel C2, the pressure balance between the reaction space 51 and the lower space 57 (i.e., the internal space of the outer chamber) below the substrate support unit 150 can be controlled.

[0064] The second gas introduced into the lower space 57 through the fill gas inlet 114 can be transmitted to the discharge space 55 through the second channel C2. More specifically, the second gas in the lower space 57 can be transmitted to the discharge space 55 of the discharge unit 120 through the second surface (e.g., the side surface) of the flow control ring FCR.

[0065] The support member TLD can provide the second channel C2 that connects the lower space 57 to the discharge space 55. For example, the second channel C2 can be formed between the support member TLD and the at least one ring R, particularly between the support member TLD and the flow control ring FCR. The second channel C2 can be used as a channel between the lower space 57 and the discharge space 55. Thus, the lower space 57 and the discharge space 55 can communicate with each other through the second channel C2 provided by the support member TLD.

[0066] In this way, the first gas in the reaction space 51 and the second gas in the lower space 57 can move through different channels (i.e., the first channel C1 and the second channel C2). The first gas and the second gas that move to different channels can meet each other at a point other than the reaction space 51. For example, the first gas and the second gas can meet each other outside the reaction space 51. More specifically, the first gas and the second gas can meet each other at a location outside the reaction space 51 and below the discharge unit 120.

[0067] In an example, the first gas and the second gas can be transmitted from the respective channels C1 and C2 to the discharge unit 120 through the junction point I below the discharge unit 120. The junction point I can be arranged outside the partition wall W. More specifically, the junction point I can be set outside the surface of the partition wall W in the side surface of the partition wall W that contacts the reaction space 51. In one example, the junction point I can be below the partition wall W of the discharge unit 120. In another example, the junction point I can be the discharge space 55 in the discharge unit 120.

[0068] In any example, the first gas in the reaction space 51 and the second gas in the lower space 57 will not meet each other in the reaction space 51. Therefore, it is possible to prevent the first gas (e.g., reaction gas) and the second gas (e.g., filling gas) from colliding in the substrate edge region. In other words, by configuring the substrate processing apparatus such that the first gas in the reaction space 51 and the second gas in the lower space 57 meet each other outside the surface of the partition wall in contact with the reaction space 51, it is possible to prevent turbulence that may occur in the substrate edge region.

[0069] In addition, the first channel C1 through which the first gas in the reaction space 51 passes and the second channel C2 through which the second gas in the lower space 57 passes may be separated from each other by at least one ring R. Here, the separation of the channels means that the two channels extend without meeting each other. Therefore, the first channel C1 and the second channel C2 separated by at least one ring R, particularly the flow control ring FCR, can each extend without meeting each other. The first channel C1 and the second channel C2 separated by the flow control ring FCR may meet at a junction point I outside the flow control ring FCR and be conveyed to the discharge space 55.

[0070] Thus, according to an embodiment of the inventive concept, it is possible to minimize the influence of the filling gas supplied from the lower part of the reactor on the processing on the substrate. In addition, according to an embodiment of the inventive concept, by allowing the gas to be diverted and discharged through at least one ring structure such as a flow control ring, rapid gas discharge can be achieved.

[0071] Figures 3 to 5 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. More specifically, Figure 3 shows a part of the substrate processing apparatus (e.g., discharge pipelines 18 and 28, connection port CP, external path EC connected to an external pump, etc.) except for the cover (i.e., the processing unit and the discharge unit) and the discharge port. Figure 4 is viewed from the first direction Figure 3 of Figure 5 is viewed from the second direction Figure 3 of

[0072] Refer to Figures 3 to 5, discharge pipelines 18 and 28 are formed in the partition 100. The discharge pipelines 18 and 28 are connected to an external path EC through connection ports CP, and the external path EC is connected to a main discharge path 211. Thus, the gas in the reaction space and the gas in the lower space are discharged to a discharge pump EP via discharge ports 13 and 23, discharge pipelines 18 and 28, external path EC, and main discharge path 211. Although not shown in the drawings, according to an embodiment of the inventive concept, each of the discharge ports 13 and 23 is provided with a flow control unit.

[0073] As Figure 4 shown, two reactors R1a and R1b in the first direction use internal discharge pipelines 18a and 18b, while the remaining two reactors in the direction opposite to the first direction use other internal discharge pipelines 28a and 28b. The two internal discharge pipelines 18 and 28 are respectively connected to the external path EC through connection ports CP and CP'. The external path EC can be implemented in one configuration or in multiple configurations.

[0074] As a result, it can be seen that the four reactors use at least one of the external paths EC and EC', the main discharge path 211, and the discharge pump EP. An isolation valve 210 can be added to the main discharge path 211. Thus, during maintenance, the discharge pump EP can be protected from the external atmosphere through the isolation valve 210. In addition, a pressure control valve (e.g., a throttle valve) can be added to the main discharge path 211. The external path EC can be fixed to be in close contact with the lower surface of the partition 100 of the outer chamber without moving. In an alternative embodiment, the two internal discharge pipelines 18 and 28 can be connected to each other within the bottom wall of the partition 100 of the outer chamber and directly connected to the main discharge path 211 without an external path EC.

[0075] Referring again to Figure 3 , the first external path EC connected to the first connection port CP can extend toward the first corner portion C1 of the outer chamber below the partition 100. In addition, a second external path EC' connected to a second connection port CP' (not shown) can extend toward the second corner portion C2 of the outer chamber below the partition 100. The discharge pump EP can be disposed on one surface of the substrate processing apparatus, for example, corresponding to the center between the first corner portion C1 and the second corner portion C2. The first external path EC can extend from the portion extending to the first corner portion C1 to the discharge pump EP. In addition, the second external path EC' can extend from the portion extending to the second corner portion C2 to the discharge pump EP.

[0076] Figure 6It is a view of a substrate processing apparatus according to some embodiments of the inventive concept. The substrate processing apparatus according to an embodiment may be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repetitive description of the embodiment will not be given.

[0077] Figure 6 The upper surface of the multi-reactor chamber 311 is shown. A plurality of reactors R are arranged in the chamber 311, and one side of each reactor R is connected to the discharge port 313. Figure 6 It is shown that each reactor R is connected to each discharge port 313, and the discharge port 313 is disposed asymmetrically with respect to the center of each reactor R.

[0078] A plurality of discharge pipelines (not shown) may be formed in the partition of the chamber 311. For example, the chamber 311 may be rectangular in shape, and the plurality of discharge pipelines may include a first discharge pipeline, a second discharge pipeline, a third discharge pipeline, and a fourth discharge pipeline. In some embodiments, the first to fourth discharge pipelines may be arranged to correspond to the four vertices of the rectangle.

[0079] The chamber 311 may include a first reactor, a second reactor, a third reactor, and a fourth reactor. Each reactor may include a substrate support unit, at least one ring, a processing unit, a discharge unit, and a discharge port.

[0080] More specifically, the first reactor may include a first substrate support unit (not shown) accommodated in the partition of the chamber 311, at least one first ring surrounding the first substrate support unit, a first processing unit 312 on the first substrate support unit, a first discharge unit 314 connected to the first reaction space between the first substrate support unit and the first processing unit 312, and a first discharge port 313 connected to at least a part of the first discharge unit 314. As described above, the gas in the first reaction space and the gas in the lower space below the first substrate support unit may meet each other outside the first reaction space. In addition, the gas in the first reaction space and the gas in the lower space below the first substrate support unit may be transmitted to the first discharge unit 314 through different channels. The different channels may be separated by the at least one first ring. The different channels may also extend along different surfaces of the at least one first ring.

[0081] The second reactor may include a second substrate support unit (not shown) accommodated in a partition of the chamber 311, at least one second ring surrounding the second substrate support unit, a second processing unit 312 on the second substrate support unit, a second discharge unit 314 connected to a second reaction space between the second substrate support unit and the second processing unit 312, and a second discharge port 313 connected to at least a part of the second discharge unit 314. As described above, the gas in the second reaction space and the gas in the lower space below the second substrate support unit may meet each other outside the second reaction space. Additionally, the gas in the second reaction space and the gas in the lower space below the second substrate support unit may be transmitted to the second discharge unit 314 through different channels. The different channels may be separated by the at least one second ring. The different channels may also extend along different surfaces of the at least one second ring.

[0082] The third reactor may include a third substrate support unit (not shown) accommodated in a partition of the chamber 311, at least one third ring surrounding the third substrate support unit, a third processing unit 312 on the third substrate support unit, a third discharge unit 314 connected to a third reaction space between the third substrate support unit and the third processing unit 312, and a third discharge port 313 connected to at least a part of the third discharge unit 314. As described above, the gas in the third reaction space and the gas in the lower space below the third substrate support unit may meet each other outside the third reaction space. Additionally, the gas in the third reaction space and the gas in the lower space below the third substrate support unit may be transmitted to the third discharge unit 314 through different channels. The different channels may be separated by the at least one third ring. The different channels may also extend along different surfaces of the at least one third ring.

[0083] The fourth reactor may include a fourth substrate support unit (not shown) accommodated in a partition of the chamber 311, at least one fourth ring surrounding the fourth substrate support unit, a fourth processing unit 312 on the fourth substrate support unit, a fourth discharge unit 314 connected to a fourth reaction space between the fourth substrate support unit and the fourth processing unit 312, and a fourth discharge port 313 connected to at least a part of the fourth discharge unit 314. As described above, the gas in the fourth reaction space and the gas in the lower space below the fourth substrate support unit may meet each other outside the fourth reaction space. Additionally, the gas in the fourth reaction space and the gas in the lower space below the fourth substrate support unit may be transmitted to the fourth discharge unit 314 through different channels. The different channels may be separated by the at least one fourth ring. The different channels may also extend along different surfaces of the at least one fourth ring.

[0084] Figures 7 to 8A view of a substrate processing apparatus according to some embodiments of the inventive concept. The substrate processing apparatus according to an embodiment may be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repetitive description of the embodiment will not be given.

[0085] Referring to Figure 7 and Figure 8 , at least one of the rings R may include at least one of a flow control ring FCR and an outer ring OR. The outer ring OR may be arranged to surround the flow control ring FCR. Accordingly, the flow control ring FCR may be between the substrate support unit 150 and the outer ring OR.

[0086] A first channel C1 through which a first gas in the reaction space 51 moves may be between the discharge unit 120 and the flow control ring FCR. A second channel C2 through which a second gas in the lower space 57 moves may be between the outer ring OR and the flow control ring FCR. In this way, the first channel C1 and the second channel C2 are separated by the flow control ring FCR, and since the separated first channel C1 and second channel C2 may be joined to each other at a junction point I outside the reaction space 51 and connected to the discharge space 55, a stable processing progress may be achieved.

[0087] The flow control ring FCR may be implemented in an "L" shape, and for this, the flow control ring FCR may include a first part FCR-1 and a second part FCR-2. The first part FCR-1 may be defined as a part that overlaps at least a part of the substrate support unit 150. In an alternative embodiment, the first part FCR-1 of the flow control ring FCR may be provided to be slidable on the substrate support unit 150.

[0088] In some embodiments, the substrate support unit 150 may be configured to be vertically movable. When the substrate support unit 150 is raised, the flow control ring FCR may move up and down with the vertical movement of the substrate support unit 150 through the first part FCR-1 of the flow control ring FCR that is provided to overlap the substrate support unit 15.

[0089] The second part FCR-2 may be defined as a part that extends in a vertical direction along a side surface of the substrate support unit 150 from the first part FCR-1. Additionally, the second part FCR-2 of the flow control ring FCR may extend in a horizontal direction (circumferential direction) along a side surface of the support TLD. In some embodiments, the second part FCR-2 may extend to overlap at least a part of the discharge unit 120. Although not shown in the drawings, in another embodiment, the flow control ring FCR may further include a third part (see FCR-3 in Figure 18 ) that extends from the second part FCR-2 to overlap at least a part of the discharge unit 120.

[0090] The outer ring OR can be on the support TLD. More specifically, the outer ring OR can be between the discharge unit 120 and the support TLD. The outer ring OR can be arranged to be slidable on the support TLD. The flow control ring FCR can be separated from the outer ring OR to form a second channel C2, and the pressure balance between the reaction space 51 and the inner space of the outer chamber (i.e., the lower space 57) can be controlled by adjusting the interval of the second channel C2.

[0091] The outer ring OR can include a curved structure at a corner portion adjacent to the junction point I of the first channel C1 and the second channel C2. Such a curved structure can accelerate the flow of gas around the curved structure. In an alternative embodiment, the discharge unit 120 can also include a curved structure at a corner portion adjacent to the junction point I. In this case, the junction point I will be between the curved structure of the outer ring OR and the curved structure of the discharge unit 120.

[0092] By introducing the curved structure of the outer ring OR, the second gas flowing through the second channel C2 can be accelerated to the discharge unit 120, having a laminar flow along the curved structure. Therefore, the collision of the first gas flowing in the first channel C1 and the second gas flowing in the second channel C2 at the junction point I can be reduced. As a result, the gas discharge around the junction point I can be promoted by the curved structure.

[0093] Figures 9 to 11 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. The substrate processing apparatus according to an embodiment can be a modification of the substrate processing apparatus according to the above embodiments. Hereinafter, a repeated description of the embodiments will not be given.

[0094] Referring to Figure 9 and Figure 10 , the flow control ring FCR can include a first part FCR-1' and a second part FCR-2. The first part FCR-1' of the flow control ring FCR can be defined as a part overlapping at least a part of the support TLD. In addition, the first part FCR-1' can extend to overlap at least a part of the substrate support unit 150. Therefore, the flow control ring FCR can be implemented as a "T" shape.

[0095] Although Figure 9 and Figure 10 show the first part FCR-1' configured to overlap with the support TLD and the substrate support unit 150, the first part FCR-1' can be configured to only overlap with the support TLD (see Figure 21 ). In this case, the flow control ring FCR will be implemented as an "L".

[0096] The second part FCR-2 of the flow control ring FCR can extend vertically along the side surface of the substrate support unit 150 from the first part FCR-1'. Additionally, the second part FCR-2 of the flow control ring FCR can extend horizontally (circumferentially) along the side surface of the support member TLD. That is, the second part FCR-2 of the flow control ring FCR can extend between the substrate support unit 150 and the support member TLD.

[0097] Due to the structure of the flow control ring FCR, the first channel C1 and the second channel C2 can be separated from each other in the reaction space 51. That is, the first channel C1 formed between the discharge unit 120 and the flow control ring FCR and the second channel C2 formed between the flow control ring FCR and the support member TLD (or the outer ring OR on the support member Figure 12 )) can extend in the reaction space 51 without meeting each other.

[0098] In some embodiments, as Figure 9 and Figure 10 shown, the first channel C1 and the second channel C2 can be separated by the flow control ring FCR and extend to the discharge unit 120. In this case, the junction point of the first gas passing through the first channel C1 and the second gas passing through the second channel C2 will be the discharge space 55 outside the reaction space 51.

[0099] The substrate support unit 150 can be configured to be vertically movable. For example, the substrate support unit 150 can move downward, and the substrate support unit 150 can load / unload the substrate in the lower space 57. Additionally, the substrate support unit 150 can move upward, and can perform processing of the substrate in the reaction space 51. As the substrate support unit 150 moves up and down, the flow control ring FCR can contact the surface of the substrate support unit 150.

[0100] For example, when the substrate support unit 150 moves up and down, the lower surface of the first part FCR-1' that is configured to overlap with the substrate support unit 150 of the flow control ring FCR and the upper surface of the step of the substrate support unit 150 can contact each other. As a result, the reaction space 51 and the lower space 57 can communicate with the discharge space 55 through the first channel C1 and the second channel C2 separated by the flow control ring FCR, respectively.

[0101] In some embodiments, the first portion FCR-1' of the flow control ring FCR may include an uneven structure Y. More specifically, the uneven structure Y may be formed in the first portion FCR-1' of the flow control ring FCR, and the first portion FCR-1' overlaps at least a part of the upper surface of the step of the support member TLD. Through the uneven structure Y, a second channel C2 may be formed between the first portion FCR-1' of the flow control ring FCR and the support member TLD.

[0102] In an alternative embodiment, the first portion FCR-1' of the flow control ring FCR may not include an uneven structure. In this case, when the substrate support unit 150 moves up and down, the flow control ring FCR may also move up and down. As the flow control ring FCR moves up and down, a second channel C2 may be generated between the first portion FCR-1' and the upper surface of the step of the support member TLD. In either case, the first gas in the reaction space may be transmitted to the discharge unit through the first surface of the flow control ring FCR, and the second gas in the lower space may be transmitted to the discharge unit through the second surface of the flow control ring FCR.

[0103] In some embodiments, the flow control ring FCR may move up and down as the substrate support unit 150 moves vertically. In addition, the flow control ring FCR may slide relative to the support member TLD along with the vertical movement of the substrate support unit 150. In this case, the discharge efficiency of the first channel C1 and / or the discharge efficiency of the second channel C2 may vary according to the degree of the vertical movement of the substrate support unit 150.

[0104] In Figure 11 and Figure 10 The exemplary configuration of the flow control ring FCR used in the embodiments of Figure 11 is shown in Figure 11 The flow control ring FCR having the first portion FCR-1' and the second portion FCR-2 may have a shape corresponding to the shape of the substrate to be processed. For example, when the substrate to be processed is a circular wafer, the flow control ring may be implemented as a circle with a larger diameter. As

[0105] Figures 12 to 14 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. The substrate processing apparatus according to the embodiment may be a modification of the substrate processing apparatus according to the above embodiments. Hereinafter, a repeated description of the embodiments will not be given.

[0106] Referring to Figure 12 andFigure 13 , the substrate processing apparatus may further include an outer ring OR, which is arranged to surround the flow control ring FCR. In this case, a first portion FCR-1' of the flow control ring FCR may overlap at least a portion of the outer ring OR. Additionally, a first channel C1 may be between the discharge unit 120 and the flow control ring FCR, and a second channel C2 may be between the outer ring OR and the flow control ring FCR. The outer ring OR may be on the support TLD.

[0107] The flow control ring FCR may be configured to be slidable on the outer ring OR. For example, surface treatment may be performed on the lower surface of the flow control ring FCR or the upper surface of the outer ring OR to have a relatively low roughness (e.g., a roughness of 0.4 or less).

[0108] A second portion FCR-2 of the flow control ring FCR, that is, the portion extending in the vertical direction along the side surface of the substrate support unit 150 from the first portion FCR-1' may have a surface inclined with respect to the substrate support unit 150 (see Figure 12 and 13 ). For example, the side surface of the substrate support unit 150 may extend in the vertical direction, and the side surface of the second portion FCR-2 of the flow control ring FCR may extend in a direction inclined with respect to the vertical direction. In another example, the side surface of the second portion FCR-2 of the flow control ring FCR may extend in the vertical direction, and the side surface of the substrate support unit 150 may extend in a direction inclined with respect to the vertical direction.

[0109] Thus, by configuring the flow control ring FCR to be slidable on the outer ring OR and by configuring the side surfaces of the second portion FCR-2 of the flow control ring FCR and the side surface of the substrate support unit 150 to be inclined with respect to each other, the flow control ring FCR can move in a second direction as the substrate support unit 150 moves in a first direction. More specifically, when the substrate support unit 150 moves in the first direction, the substrate support unit 150 may contact the flow control ring FCR. The flow control ring FCR can move in the second direction (e.g., can slide horizontally) by the force generated when the substrate support unit 150 continues to move in the first direction while in contact with the flow control ring FCR.

[0110] This force may be defined as the force by which the substrate support unit pushes the flow control ring FCR. Since the flow control ring FCR can slide on the outer ring OR, when the substrate support unit 150 moves up and down, the thrust causes the flow control ring FCR to slide against the outer ring OR.

[0111] Shown in Figure 14 and Figure 12 and Figure 13Exemplary configuration of the flow control ring FCR used in an embodiment of the present invention. As described above, the flow control ring FCR may include: a first portion FCR-1', which extends to overlap with the substrate support unit 150 and the outer ring OR; and a second portion FCR-2, which extends from the first portion in a vertical direction. At the same time, the second portion FCR-2 may be configured to have an inclined surface. For example, the inclined surface may be formed such that the inner diameter of an end portion close to one end of the first portion FCR-1' is smaller than the inner diameter of the other end portion away from the first portion FCR-1'.

[0112] Figure 15 View of a substrate processing apparatus according to some embodiments of the inventive concept. Figure 16 is Figure 15 An enlarged view of part A in. The substrate processing apparatus according to an embodiment may be a modification of the substrate processing apparatus according to the above embodiment. Hereinafter, a repeated description of the embodiment will not be given.

[0113] Referring to Figure 15 , a substrate (not shown) is mounted on the heating block 79. The heating block driver 710 in the lower space may move the heating block 79 vertically. Loading and unloading of the substrate may be performed by the vertical movement of the heating block 79.

[0114] The gas supplied to the reactor is introduced into the reaction space 711 on the heating block 79 through the gas inlet 713 and the shower head 72, and the substrate is located on the heating block 79 (not shown). Then, after (or during) the substrate processing using the gas is completed (e.g., deposition), the process gas 716 is discharged. The process gas 716 is transferred to the discharge pipe 74 through the space between the flow control ring 75 and the discharge pipe 74. The process gas 716 transferred to the discharge pipe 74 may be discharged to a discharge pump (not shown) through the discharge port 73 and the reactor wall 71.

[0115] When the gas 715 is introduced into the reaction space 711 through the gas inlet 713, the purge gas 717 is introduced into the lower space 712 of the reactor through the purge gas inlet 714. As Figure 15 shown in region A of, when the process gas 716 is discharged into the discharge space 76 in the discharge pipe 74, the purge gas 717 is supplied to the partition space between the heating block 79 and the flow control ring 75. By supplying the purge gas 717 to the partition space, the process gas 716 is prevented from being introduced into the lower space 712 of the reactor. To achieve this prevention, an adjustment operation may be performed to balance the process pressure in the reaction space 711 and the pressure in the lower space 712 of the reactor to which the purge gas 717 is supplied.

[0116] Introducing the filling gas 717 into the separation space between the heating block 79 and the flow control ring 75 reduces the emission efficiency. That is, since the filling gas 717 introduced into the separation space after the reaction collides with the processing gas 716, the emission efficiency is reduced. In addition, such gas collision occurs in the substrate edge region. Therefore, the gas collision may affect the uniformity of the thin film to be processed.

[0117] More specifically, as Figure 16 shown, in the case where the heating block 79 is raised to form a reaction space 711 for substrate processing, a collision may occur between the filling gas 717 and the processing gas 716 moving through the space between the heating block 79 and the flow control ring 75. Such gas collision hinders the normal emission of the gas to the emission pipe 74. Due to such poor emission flow in the substrate edge region, the uniformity of the thin film in the substrate edge is reduced. Therefore, the present invention seeks to disclose a structure and an apparatus for minimizing the influence of the filling gas on the processing in the reaction space.

[0118] Figure 17 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. The substrate processing apparatus according to an embodiment may be a modification of the substrate processing apparatus according to the above-described embodiment. Hereinafter, a repeated description of the embodiment will not be given.

[0119] Referring to Figure 17 , in order to prevent the filling gas 717 from the lower space and the processing gas 716 from the reaction space 711 from directly colliding near the edge of the substrate (i.e., the edge of the heating block 79), the flow control ring 75 is placed at the edge of the heating block 79. A first discharge channel is formed between the flow control ring 75 and the discharge pipe 74, and the processing gas 716 travels through the first discharge channel, and a second discharge channel is formed between the flow control ring 75 and the outer ring 718, and the filling gas 717 travels through the second discharge channel.

[0120] Therefore, as Figure 17 (b) shows, direct collision between the processing gas 716 and the filling gas 717 around the substrate can be prevented. In addition, since the corner portion of the outer ring 718 has a curved structure, the filling gas 717 can be accelerated along the curved structure of the outer ring 718 constituting the second discharge channel by the Coandă effect. The accelerated filling gas 717 can be effectively discharged into the discharge space 76 of the discharge pipe 74 while forming a laminar flow.

[0121] Meanwhile, the flow control ring 75 can move up and down together with the heating block 79. In this case, the height of the first discharge channel formed between the flow control ring 75 and the discharge pipe 74 can be adjusted according to the rising height of the heating block 79 and the flow control ring 75. Therefore, the discharge efficiency of the process gas 716 discharged into the discharge space 76 through the first discharge channel can be controlled.

[0122] When the heating block 79 descends, the flow control ring 75 located on the heating block 79 can descend. When the descent of the heating block 79 continues for the loading / unloading of the substrate to be processed, the flow control ring 75 can be separated from the heating block 79, and the separated flow control ring 75 can be placed on the support member 750. The support member 750 can be fixed below the chamber CH. In an alternative embodiment, the support member 750 can be configured to be detachable below the chamber CH.

[0123] When the heating block 79 ascends, the flow control ring 75 placed on the support member 750 can be seated on the heating block 79 again. Therefore, when the heating block 79 moves up and down, the flow control ring 75 on the support member 750 is separated from the support member 750, and the flow control ring 75 can move up and down together with the heating block 79.

[0124] Figure 18 is a view of a substrate processing apparatus according to some embodiments of the inventive concept. Figure 19 is Figure 18 a partially enlarged view of the substrate processing apparatus. The substrate processing apparatus according to the embodiment can be a modification of the substrate processing apparatus according to the above embodiment. Hereinafter, a repeated description of the embodiment will not be given.

[0125] Referring to Figure 18 , the discharge paths of the process gas 716 and the purge gas 717 are separated from each other. That is, the first discharge channel for discharging the process gas 716 and the second discharge channel for discharging the discharge gas can be separated by the outer ring 718. Therefore, as Figure 18 shown in B, the process gas 716 is discharged into the discharge pipe 74 through the first discharge channel formed between the discharge pipe 74 and the outer ring 718 without colliding with the purge gas 717. The purge gas 717 is discharged into the discharge pipe 74 through the second discharge channel between the chamber wall (i.e., the support) and the outer ring 718 without colliding with the process gas 716.

[0126] The flow control ring 75 may include: a first part "FCR-1", which is arranged to overlap at least a part of the substrate support unit including the heating block 79; a second part FCR-2, which extends vertically along the side surface of the substrate support unit from the first part "FCR-1"; and a third part FCR-3, which extends horizontally from the second part FCR-2 to overlap at least a part of the outer ring 718.

[0127] The flow control ring 75 is disposed at the edge of the heating block 79 and moves up and down together with the heating block 79. When the heating block 79 rises to the substrate processing position, the flow control ring 75 and the outer ring 718 perform a face seal 719 to physically prevent the collision between the reaction gas and the filling gas.

[0128] More specifically, as the heating block 79 rises, the lower surface of the first part "FCR-1" may contact the heating block 79, and the upper surface of the third part FCR-3 may be connected to the lower surface of the outer ring 718. Therefore, as the heating block 79 continues to rise, the flow control ring FCR may also rise through the first part "FCR-1", and the outer ring 718 may also rise through the third part FCR-3. When the outer ring 718 is lifted by the accompanying rising action, a second discharge channel may be formed by the separation between the chamber wall CH (i.e., the support) and the outer ring 718.

[0129] When the heating block 79 descends, the lower surface of the outer ring 718 may contact the chamber wall CH (i.e., the support), and the outer ring 718 may be located on the chamber wall CH. Then, as the heating block 79 continues to descend, the flow control ring 75 located on the heating block 79 may be separated from the heating block 79, and the lower surface of the third part FCR-3 may contact the upper surface of the support member 750. Therefore, the flow control ring 75 separated from the heating block 79 will be placed on the support member 750.

[0130] According to Figure 18 the embodiment of Figure 17 Unlike the embodiment of

[0131] At the same time, in Figure 18In (b), the side surface of the outer ring 718 can be separated from the side surface of the flow control ring 75. More specifically, the second part FCR-2 of the flow control ring 75 and the outer ring 718 can be separated from each other to form a space. Due to this formed space, a blind spot 720 exists between the outer ring 718 and the flow control ring 75. Since no filling gas is supplied to the blind spot, some process gas discharged from the reaction space remains. Figure 19 Is Figure 18 An enlarged view of the area around the blind spot 720 in (b).

[0132] As Figure 19 shown, in some embodiments, at least one of the discharge pipe 74 and the outer ring 718 may include a bent structure. The bent structure may be configured to help discharge the process gas (e.g., reaction gas) located in the above-mentioned separated space into the first discharge channel. For example, the bent structure may have a certain radius of curvature.

[0133] Referring Figure 19 , the reaction gas discharged from the reaction space into the discharge pipe 74 is discharged in approximately three forms. The flow in the form of "G1" is directly discharged from the reaction space into the discharge space 76 through the discharge channel between the outer ring 718 and the discharge pipe 74 ( Figure 18 ). The flow in the form of "G2" flows along the outer wall of the discharge pipe 74 and is accelerated near the curved surface L of the discharge pipe 74 and introduced into the discharge channel. The flow in the form of "G3" flows into the blind spot 720 and then returns to the discharge channel by suction in the discharge space. Here, the flow in the form of "G3" is accelerated near the curved surface L' of the outer ring 718 to be introduced into the discharge channel. That is, due to the bent structure of the outer ring 718, the residual gas and its turbulence in the blind spot can be prevented, and the process gas can be discharged and removed faster and more smoothly.

[0134] Figure 20 Is a view of a substrate processing apparatus according to some embodiments of the inventive concept. The substrate processing apparatus according to an embodiment may be a modification of the substrate processing apparatus according to the above embodiment. Hereinafter, a repeated description of the embodiment will not be given.

[0135] Referring Figure 20, the discharge pipe 74 may include a first bending structure D1, and the outer ring 718 may include a second bending structure D2. In this case, the junction point I of the first channel for discharging the process gas 716 and the second channel for discharging the filling gas 717 may be between the first bending structure D1 of the discharge pipe 74 and the second bending structure D2 of the outer ring 718. In this way, the corners of the outer ring 718 and the discharge pipe 74 exposed to the discharge channel are bent. Therefore, the discharge of the filling gas 717 and the process gas 716 (e.g., reaction gas) can be accelerated along the bent surface of the outer ring 718 or the discharge pipe 74 by inducing the wall attachment effect.

[0136] In Figures 18 to 20 the embodiment, in order to discharge the filling gas 717 and the process gas 716 smoothly and quickly, the corners of the discharge pipe and the outer ring that encounter the gas are bent to cause the wall attachment effect. To achieve this purpose, the curvature of the bent surface may preferably be R1 or greater (i.e., the radius of curvature is 1 mm or greater).

[0137] Figures 18 to 20 The technical features of the embodiment of

[0138] 1. The gap connecting the upper space and the lower space of the reactor is bypassed. That is, the gas movement from the upper part to the lower part and the gas movement from the lower part to the upper part can be blocked, and the lower discharge can be suppressed by immediately discharging the lower gas.

[0139] 2. The distance between the existing flow control ring and the heating block (i.e., the channel through which the filling gas in the lower space is discharged) can be separated from the substrate to suppress process variations caused by the lower gas.

[0140] 3. The plasma confinement effect can be obtained by arranging the flow control ring on the side of the heating block, and a uniform and stable plasma process can be performed by concentrating the plasma in the reaction space on the substrate.

[0141] 4. The flow control ring arranged on the side of the heating block can move according to the vertical movement of the heating block. Therefore, the width and volume of the discharge channels formed between the discharge pipe and the outer ring and between the outer ring and the chamber wall can be controlled.

[0142] In the above Figures 18 to 20 embodiment, the discharge gas flow is controlled by the structure in which the flow control ring is arranged on the side of the heating block (i.e., in which the flow control ring is arranged to overlap a part of the heating block in the vertical direction). On the other hand, Figure 21Shows a structure in which a flow control ring is provided on the outer ring to overlap with a part of the outer ring. In this embodiment, the exhaust gas flow is controlled by a structure that prevents the collision between the reaction gas and the filling gas around the heating block.

[0143] Referring to Figure 21 , the separation distance between the side surface of the heating block 79 and the flow control ring 75 is very narrow. For example, the separation distance can be configured to be within 0.2 mm. Therefore, it is very difficult for the filling gas 717 to enter the reaction space or for the process gas 716 to enter the lower space. On the other hand, the flow control ring 75 and the outer ring 718 are separated from each other far enough to allow gas to pass through, thereby forming an exhaust channel for the filling gas 717.

[0144] Therefore, as Figure 21 shown, the process gas 716 and the filling gas 717 do not collide with each other around the heating block and can be discharged into the discharge space 76 through the corresponding exhaust channels. In Figure 21 , by greatly reducing the separation distance between the side surface of the heating block 79 and the flow control ring 75, the collision between the process gas 716 and the filling gas 717 is minimized. However, another advantage of this structure is that it can promote the self-alignment of the flow control ring 75 in the reaction space. For example, when the flow control ring 75 is asymmetrically provided on the upper surface of the outer ring 718, that is, when the symmetry center of the inner diameter of the flow control ring 75 does not coincide with the center of the heating block 79, when the heating block 79 rises, the heating block 79 forms surface contact with a part of the inner surface of the flow control ring 75, so a force is applied in the horizontal direction with respect to the flow control ring 75. Therefore, the symmetry center of the inner diameter of the flow control ring 75 and the center of the heating block 79 can coincide.

[0145] Figure 22 Shows such a process. Figure 22 Shows the process of self-aligning the flow control ring 75 by the heating block 79.

[0146] - First operation ( Figure 22 (a)): The heating block 79 rises.

[0147] - Second operation ( Figure 22 (b)): The side surface of the heating block 79 contacts the inner side of the flow control ring 75.

[0148] - Third operation ( Figure 22 (c)): While the heating block 79 continues to rise in contact with the flow control ring 75, the movement of the flow control ring 75 starts. For example, the flow control ring 75 abuts against the outer ring 718 and moves laterally (i.e., slides) in a surface-contact manner on the upper surface of the step of the outer ring 718.

[0149] - Fourth operation (Figure 22 (d)): As the heating block 79 continues to rise in contact with the flow control ring 75, the self-alignment of the flow control ring 75 continues.

[0150] - Fifth operation ( Figure 22 (e)): The heating block 79 rises to the substrate processing position, and the self-alignment of the flow control ring 75 is completed.

[0151] According to Figure 22 The control method of the substrate processing apparatus according to the embodiment (especially the self-alignment of the flow control ring) is particularly important in high-temperature processing (for example, high-temperature processing above 500 °C). At high temperatures, due to the thermal deformation of the heating block 79 and the flow control ring 75, the width of the gap between the heating block 79 and the flow control ring 75 depends on the side surface of the heating block 79 and the position of the flow control ring 75. Therefore, when the flow control ring 75 is fixed on the outer ring 718, a filling gas or a reaction gas can be introduced into a specific position in the gap, which will affect the film uniformity around the substrate.

[0152] According to Figure 22 the embodiment, by the contact between the heating block 79 and the flow control ring 75, the self-alignment of the flow control ring 75 can be achieved, which can prevent the deformation caused by high temperature and the resulting non-uniformity in processing. To maintain this structure, the side walls of the flow control ring 75 and the side walls of the outer ring 718 are spaced apart at regular intervals to facilitate the alignment of the flow control ring 75 on the upper surface of the outer ring 718.

[0153] Figure 23 is Figure 22 a view of the flow control ring 75 used in

[0154] Referring to Figure 22 and Figure 23 , the lower surface of the flow control ring 75, that is, the part of the flow control ring 75 that contacts the upper surface of the outer ring 718, has an uneven structure Y, which supports the flow control ring 75 on the outer ring 718 while providing a discharge channel for a filling gas such as nitrogen (N 2 ). In addition, the surface roughness of the inner surface of the flow control ring can be 0.4 or less so that the inner surface of the flow control ring 75 contacts the heating block 79, slides under the action of the weight of the flow control ring, and the self-alignment is achieved by sliding.

[0155] It should be understood that the embodiments described herein are to be considered in a descriptive sense only and not for purposes of limitation. The description of a feature or aspect in each embodiment is generally to be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those of ordinary skill in the art will understand that various changes may be made in form and detail without departing from the spirit and scope of the disclosure as defined by the appended claims.

Claims

1. A substrate processing apparatus, comprising: a substrate support unit; a processing unit located on the substrate support unit; and an exhaust unit connected to a reaction space between the substrate support unit and the processing unit, wherein a first gas in the reaction space is exhausted to the exhaust unit through a first channel, a second gas in a lower space below the substrate support unit is exhausted to the exhaust unit through a second channel, and the first channel and the second channel are joined to each other below the exhaust unit, wherein the exhaust unit further comprises: a partition wall defining a side surface of the reaction space; an outer wall parallel to the partition wall; and a connecting wall extending to connect the partition wall to the outer wall, wherein a joining point where the first channel and the second channel are joined to each other is outside the partition wall.

2. The substrate processing apparatus according to claim 1, further comprising: a flow control ring surrounding the substrate support unit, wherein the first gas in the reaction space is exhausted to the exhaust unit through a first surface of the flow control ring, and the second gas in the lower space below the substrate support unit is exhausted to the exhaust unit through a second surface of the flow control ring.

3. The substrate processing apparatus according to claim 2, wherein the flow control ring overlaps at least a part of the exhaust unit below the exhaust unit.

4. The substrate processing apparatus according to claim 2, further comprising: an outer ring surrounding the flow control ring, wherein the first channel is between the exhaust unit and the flow control ring, and the second channel is between the outer ring and the flow control ring.

5. The substrate processing apparatus according to claim 4, further comprising: a support configured to support the processing unit and the exhaust unit; and the outer ring located between the exhaust unit and the support.

6. The substrate processing apparatus according to claim 4, wherein, the substrate support unit is configured to be vertically movable, and the flow control ring is configured to move up and down according to the vertical movement of the substrate support unit.

7. The substrate processing apparatus according to claim 4, wherein, a corner portion adjacent to a joining point of the outer ring includes a first bending structure.

8. The substrate processing apparatus according to claim 7, wherein, a corner portion of the exhaust unit includes a second bending structure, and the joining point is between the first bending structure and the second bending structure.

9. The substrate processing apparatus according to claim 4, wherein, the flow control ring comprises: a first portion overlapping at least a part of the substrate support unit; and a second portion extending along a side surface of the substrate support unit from the first portion.

10. The substrate processing apparatus according to claim 9, wherein, the flow control ring further comprises: a third portion extending from the second portion to overlap at least a part of the exhaust unit.

11. The substrate processing apparatus according to claim 4, wherein, the flow control ring comprises: a first portion overlapping at least a part of the outer ring; and The second part extends along the side surface of the substrate support unit from the first part.

12. The substrate processing apparatus according to claim 11, wherein, the substrate support unit is configured to be vertically movable, and when the substrate support unit moves up and down, the flow control ring slides relative to the outer ring by the thrust of the substrate support unit.

13. The substrate processing apparatus according to claim 11, wherein, the first part of the flow control ring includes an uneven structure, and the second channel is formed between the first part of the flow control ring and the outer ring according to the uneven structure.

14. The substrate processing apparatus according to claim 11, wherein, the second part of the flow control ring has a surface inclined with respect to the substrate support unit.

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