Light-emitting components

Abstract

A light-emitting element is provided. The light-emitting element comprises: a first light-emitting portion having a first area; a second light-emitting portion having a second area; and a third light-emitting portion having a third area, wherein the first light-emitting portion and the second light-emitting portion are located in the same plane, the third light-emitting portion is arranged across the first light-emitting portion and the second light-emitting portion, and the third area is larger than each of the first area and the second area.

Description

Technical Field

[0001] The present invention relates to a light emitting element, and more particularly, to a light emitting element having a plurality of stacked light emitting portions. Background Art

[0002] Light-emitting diodes (LEDs), as inorganic light sources, are widely used in various fields such as display devices, vehicle lamps, general lighting, etc. LEDs have the advantages of long life, low power consumption, and fast response speed, and are therefore rapidly replacing existing light sources.

[0003] In particular, display devices generally use a mixture of blue, green and red to present various colors. Each pixel of the display device is equipped with blue, green and red sub-pixels, and the color of a specific pixel is determined by the colors of these sub-pixels, and an image is realized by a combination of these pixels.

[0004] Light emitting diodes are mainly used as backlight light sources in display devices, but recently, micro LEDs (micro LEDs) are being developed as next-generation displays that directly realize images using light emitting diodes. Summary of the invention

[0005] Technical issues

[0006] An object of the present invention is to provide a light emitting element with improved light efficiency and light extraction.

[0007] The problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned can be clearly understood by those skilled in the art through the following description.

[0008] Technical Solution

[0009] In order to achieve the desired problem, the light-emitting element according to an embodiment of the present invention is characterized in that it includes: a first light-emitting portion having a first area; a second light-emitting portion having a second area; and a third light-emitting portion having a third area, the first light-emitting portion and the second light-emitting portion are located in the same plane, the third light-emitting portion is arranged across the first light-emitting portion and the second light-emitting portion, and the third area is larger than each of the first area and the second area.

[0010] In an embodiment, the first light-emitting portion may include a 1-1 conductive type semiconductor layer and a first semiconductor structure arranged on the 1-1 conductive type semiconductor layer and including a first active layer and a 2-1 conductive type semiconductor layer; the second light-emitting portion includes the 1-1 conductive type semiconductor layer and a second semiconductor structure arranged on the 1-1 conductive type semiconductor layer in a manner separated from the first semiconductor structure and including a second active layer and a 2-2 conductive type semiconductor layer; the third light-emitting portion is arranged separated from the first light-emitting portion and the second light-emitting portion and includes a 1-3 conductive type semiconductor layer, a third active layer and a 2-3 conductive type semiconductor layer.

[0011] In an embodiment, the light emitting element may further include: a first pad electrically connected to the 2-1 conductive type semiconductor layer; a second pad electrically connected to the 2-2 conductive type semiconductor layer; a third pad electrically connected to the 2-3 conductive type semiconductor layer; and a common pad electrically connecting the 1-1 conductive type semiconductor layer and the 1-3 conductive type semiconductor layer together.

[0012] In an embodiment, the light emitting element may further include: a first through-electrode electrically connecting the 2-1 conductive type semiconductor layer and the first pad; a second through-electrode electrically connecting the 2-2 conductive type semiconductor layer and the second pad; a third through-electrode electrically connecting the 2-3 conductive type semiconductor layer and the third pad; a fourth through-electrode electrically connecting the 1-1 conductive type semiconductor layer exposed between the first semiconductor structure and the second semiconductor structure and the common pad; and a fifth through-electrode electrically connecting the 1-3 conductive type semiconductor layer and the common pad.

[0013] In an embodiment, the light emitting element may further include: a first through electrode electrically connecting the 2-1 conductive type semiconductor layer and the first pad; a second through electrode electrically connecting the 2-2 conductive type semiconductor layer and the second pad; a third through electrode electrically connecting the 2-3 conductive type semiconductor layer and the third pad; and a fourth through electrode electrically connecting the 1-1 conductive type semiconductor layer and the 1-3 conductive type semiconductor layer to the common pad, the fourth through electrode penetrating the 1-3 conductive type semiconductor layer and electrically connected to the 1-1 conductive type semiconductor layer exposed between the first semiconductor structure and the second semiconductor structure.

[0014] In an embodiment, the light emitting element may further include: a bonding portion filling the first light emitting portion and between the second light emitting portion and the third light emitting portion and between the first semiconductor structure and the second semiconductor structure, and bonding the first light emitting portion, the second light emitting portion and the third light emitting portion.

[0015] In an embodiment, the bonding portion may include a transparent and insulating substance.

[0016] In an embodiment, the light emitting element may further include: an insulating film surrounding the outer side walls of the first through electrode to the fourth through electrode, the fourth through electrode penetrating the third light emitting portion and the bonding portion, one side of the fourth through electrode contacting the 1-1 conductive type semiconductor layer exposed between the first semiconductor structure and the second semiconductor structure, and the other side of the fourth through electrode contacting the common pad, and the common pad may be electrically contacted with the 1-3 conductive type semiconductor layer.

[0017] In an embodiment, the third light emitting portion includes a hole exposing the 1-3 conductive type semiconductor layer, and the hole may have a width smaller than a width of the 1-1 conductive type semiconductor layer exposed between the first semiconductor structure and the second semiconductor structure at a position corresponding to the 1-1 conductive type semiconductor layer exposed between the first semiconductor structure and the second semiconductor structure.

[0018] In an embodiment, the hole can be arranged between the 1-3 conductive type semiconductor layer and the 1-1 conductive type semiconductor layer, the bonding portion fills the inside of the hole, and the fourth through electrode penetrates the 1-3 conductive type semiconductor layer and the bonding portion, one side of the fourth through electrode contacts the common pad, the other side facing the one side contacts the 1-1 conductive type semiconductor layer, and the side wall of the fourth through electrode contacts the 1-3 conductive type semiconductor layer.

[0019] In an embodiment, the light emitting element may further include: an insulating film filling the hole, the hole being arranged between the common pad and the 1-3 conductive type semiconductor layer, the fourth through electrode penetrating the insulating film and the 1-3 conductive type semiconductor layer, so that the upper side wall of the fourth through electrode is in contact with the insulating film, the middle side wall of the fourth through electrode is in contact with the 1-3 conductive type semiconductor layer, the lower side wall of the fourth through electrode is in contact with the bonding portion, one side of the fourth through electrode is in contact with the common pad, and the other side facing the one side is in contact with the 1-1 conductive type semiconductor layer exposed between the first semiconductor structure and the second semiconductor structure.

[0020] In an embodiment, the bonding part may include a transparent and conductive substance.

[0021] In an embodiment, the hole may face the 1-1 conductive type semiconductor layer exposed between the first semiconductor structure and the second semiconductor structure, and the bonding portion may extend into the hole to contact the 1-3 conductive type semiconductor layer, and extend along between the first semiconductor structure and the second semiconductor structure to contact the 1-1 conductive type semiconductor layer.

[0022] In an embodiment, the fourth through electrode may be in contact with at least a portion of the 1-3 conductive type semiconductor layer and the bonding portion.

[0023] In an embodiment, the fourth through electrode may penetrate the 1-3 conductive type semiconductor layer so that a side wall of the fourth through electrode is in contact with the 1-3 conductive type semiconductor layer.

[0024] In an embodiment, the light emitting element may further include: an insulating film filling the hole, the hole may be arranged between the common pad and the 1-3 conductive type semiconductor layer, the fourth through electrode may penetrate the insulating film and penetrate the 1-3 conductive type semiconductor layer and at least a portion of the bonding portion, so that a portion of the fourth through electrode is in contact with the 1-3 conductive type semiconductor layer.

[0025] In an embodiment, the light emitting element may further include: a substrate, the first light emitting portion and the second light emitting portion are arranged to be spaced apart from each other; and an adhesive layer bonding the substrate to the first light emitting portion and the second light emitting portion and including a conductive substance.

[0026] In an embodiment, the first light emitting portion may include a 1-1 conductive type semiconductor layer, a first active layer and a 2-1 conductive type semiconductor layer, the second light emitting portion may include a 1-2 conductive type semiconductor layer, a second active layer and a 2-2 conductive type semiconductor layer, and the third light emitting portion may include a 1-3 conductive type semiconductor layer, a third active layer and a 2-3 conductive type semiconductor layer.

[0027] In an embodiment, the adhesive layer may electrically connect the 1-1 conductive type semiconductor layer and the 1-2 conductive type semiconductor layer.

[0028] In an embodiment, the light emitting element may further include: a first pad electrically connected to the 2-1 conductive type semiconductor layer; a second pad electrically connected to the 2-2 conductive type semiconductor layer; a third pad electrically connected to the 2-3 conductive type semiconductor layer; and a common pad electrically connected to the adhesive layer.

[0029] In an embodiment, the adhesive layer includes: a first adhesive layer arranged between the 1-1 conductive type semiconductor layer and the substrate; and a second adhesive layer arranged between the 1-2 conductive type semiconductor layer and the substrate, each of the first adhesive layer and the second adhesive layer can be electrically connected to the substrate.

[0030] In an embodiment, the light emitting element may further include: a first pad electrically connected to the 2-1 conductive type semiconductor layer; a second pad electrically connected to the 2-2 conductive type semiconductor layer; a third pad electrically connected to the 2-3 conductive type semiconductor layer; and a common pad electrically connected to the substrate.

[0031] Details of other embodiments are included in the detailed description and accompanying drawings.

[0032] Technical Effects

[0033] According to the light emitting element according to the embodiment of the present invention, the light emitting efficiency of the light emitting portion emitting red light can be increased by making the size of the light emitting portion emitting red light larger than the light emitting portion emitting blue light or green light. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1a FIG. 1 is a plan view for explaining a light emitting element according to an embodiment of the present invention.

[0035] Figure 1b , Figure 1c as well as Figure 1d For the general Figure 1a 1 is a cross-sectional view of a light emitting element taken along line AA', illustrating the light emitting element according to the embodiment.

[0036] Figure 2a , Figure 2b as well as Figure 2c It is used to illustrate Figure 1a A plan view of the arrangement structure of the first light-emitting portion and the second light-emitting portion of the light-emitting element.

[0037] Figure 3a is a plan view for explaining a light emitting element according to another embodiment of the present invention.

[0038] Figure 3b Yes Figure 3a A cross-sectional view of the light-emitting element taken along line AA'.

[0039] Figure 4 is a cross-sectional view for explaining a light emitting element according to still another embodiment of the present invention.

[0040] Figure 5a and Figure 5b is a cross-sectional view for explaining a light emitting element according to still another embodiment of the present invention.

[0041] Figure 6 is a cross-sectional view for explaining a light emitting element according to still another embodiment of the present invention.

[0042] Figure 7 is a cross-sectional view for explaining a light emitting element according to still another embodiment of the present invention.

[0043] Figure 8a and Figure 8b is a cross-sectional view for explaining a light emitting element according to still another embodiment of the present invention.

[0044] Figures 9a to 26a It is a plan view for explaining a method for manufacturing a light emitting element according to an embodiment of the present invention.

[0045] Figures 9b to 26b For the general Figures 9a to 26a A cross-sectional view of the light-emitting element taken along line AA'.

[0046] Fig. 27 and Fig.28 It is a cross-sectional view for explaining a method for manufacturing a light emitting element according to another embodiment of the present invention.

[0047] Fig.29 and Fig.30 It is a cross-sectional view for explaining a method of mounting a light emitting element according to an embodiment of the present invention on a mounting substrate.

[0048] Preferred Embodiments

[0049] In order to fully understand the configuration and effects of the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and can be implemented in various forms and can be variously modified.

[0050] And, the terms used in the embodiments of the present invention may be construed as meanings generally known to a person having ordinary knowledge in the corresponding technical field unless otherwise defined.

[0051] Hereinafter, a light emitting element according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0052] Figure 1a is a plan view for explaining a light emitting element according to an embodiment of the present invention, Figure 1b , Figure 1c as well as Figure 1d For the general Figure 1a 1 is a cross-sectional view of a light emitting element taken along line AA', illustrating the light emitting element according to the embodiment.

[0053] Reference Figure 1a to Figure 1dThe light emitting element may include a substrate 100 , a first light emitting portion LE1 , a second light emitting portion LE2 , and a third light emitting portion LE3 arranged on the substrate 100 .

[0054] According to one embodiment, the first light emitting portion LE1 and the second light emitting portion LE2 may be arranged on the same plane on the first surface 102 of the substrate 100, and the third light emitting portion LE3 may be arranged on the first light emitting portion LE1 and the second light emitting portion LE2. The size of the third light emitting portion LE3 may be larger than the size of each of the first light emitting portion LE1 and the second light emitting portion LE2. At this time, the size of each of the light emitting portions LE1, LE2, and LE3 represents the area of ​​light emission. As an example, the first light emitting portion LE1 has a first width WT1, the second light emitting portion LE2 has a second width WT2, and the third light emitting portion LE3 has a third width WT3, wherein the third width WT3 is larger than the first width WT1 or the second width WT2, and the first width WT1 and the second width WT2 may be the same as or different from each other.

[0055] When the second surface 104 facing the first surface 102 of the substrate 100 is a light extraction surface, the wavelength of the third light emitting unit LE3 can be the longest. As an example, the first light emitting unit LE1 can emit blue light, the second light emitting unit LE2 can emit green light, and the third light emitting unit LE3 can emit red light. Differently, the first light emitting unit LE1 can emit green light, the second light emitting unit LE2 can emit blue light, and the third light emitting unit LE3 can emit red light.

[0056] For example, when the first light-emitting unit LE1 emits blue light, the second light-emitting unit LE2 emits green light, and the third light-emitting unit LE3 emits red light, in the same area, the third light-emitting unit LE3 that generally emits red light has a lower luminous efficiency than the first light-emitting unit LE1 that emits blue light or the second light-emitting unit LE2 that emits green light. Therefore, as in the present embodiment, by making the area of ​​the third light-emitting unit LE3 larger than each of the first light-emitting unit LE1 and the second light-emitting unit LE2, the same amount of light (luminous efficiency) can be emitted when the same voltage is applied. Accordingly, the color balance of the light-emitting element can be improved.

[0057] Figure 2a , Figure 2b as well as Figure 2c It is used to illustrate Figure 1a A plan view of the arrangement structure of the first light-emitting portion and the second light-emitting portion of the light-emitting element.

[0058] according to Figure 2aAs shown in the example, in a planar perspective, the first light emitting unit LE1 may be arranged on one side of the substrate 100 and have a rectangular structure with the first direction DR1 as the long side direction, and the second light emitting unit LE2 may be arranged on the other side of the substrate 100 separated from the first light emitting unit LE1 in a second direction DR2 perpendicular to the first direction DR1, and have a rectangular structure with the first direction DR1 as the long side direction. As an example, the first light emitting unit LE1 may have a first width WT1, and the second light emitting unit LE2 may have a second width WT2. The first width WT1 and the second width WT2 may be the same or different from each other. The third light emitting unit LE3 may be arranged separated from the first light emitting unit LE1 and the second light emitting unit LE2 in a third direction DR3 perpendicular to the first direction DR1 and the second direction DR2, and have a structure substantially the same as the substrate 100. The third light emitting unit LE3 may have a third width WT3 greater than each of the first width WT1 and the second width WT2.

[0059] according to Figure 2b In another example shown, in a planar viewing angle, when the first light-emitting unit LE1 emits blue light and the second light-emitting unit LE2 emits green light, the size of the first light-emitting unit LE1 can be larger than the size of the second light-emitting unit LE2. This is because the visibility of green light is about 6 times better than that of blue light, so the color balance of the light-emitting element can be improved by forming the size of the first light-emitting unit LE1 that emits blue light to be larger than the second light-emitting unit LE2 that emits green light. As an example, when the first light-emitting unit LE1 has a first width WT1, the second light-emitting unit LE2 has a second width WT2, and the third light-emitting unit LE3 has a third width WT3, the first width WT1 can be larger than the second width WT2, and the third width WT3 can be larger than the first width WT1.

[0060] Although the present disclosure describes a situation in which the first light-emitting unit LE1 emitting blue light is formed to be larger than the second light-emitting unit LE2 emitting green light, thereby improving the visibility of the blue light, the present disclosure is not limited thereto. Generally, since the external quantum efficiency of the first light-emitting unit LE1 emitting blue light is higher than that of the second light-emitting unit LE2 emitting green light, it may be necessary to reduce the luminous intensity of the blue light. Further, in order to match the color mixing ratio of white light, it is necessary to make the luminous intensity of the green light higher than that of the blue light. Therefore, it is necessary to adjust the areas of the first light-emitting unit LE1 emitting blue light and the second light-emitting unit LE2 emitting green light so that they emit light with appropriate luminous intensities of blue light and green light, and depending on the situation, the area of ​​the first light-emitting unit LE1 may also be smaller than the area of ​​the second light-emitting unit LE2.

[0061] according to Figure 2cIn another example shown, in a planar perspective, the first light emitting unit LE1 may be arranged on one side of the substrate 100 and have a triangular structure, and the second light emitting unit LE2 may be arranged on the other side of the substrate 100 separated from the first light emitting unit LE1 and have a triangular structure. The opposite sides of the first light emitting unit LE1 and the opposite sides of the second light emitting unit LE2 may face each other. The first light emitting unit LE1 and the second light emitting unit LE2 may have the same or different sizes, and the third light emitting unit LE3 may have a size larger than the first light emitting unit LE1 and the second light emitting unit LE2.

[0062] Refer again Figure 1a and Figure 1b , the first light emitting portion LE1 may include a common n-type semiconductor layer COM_N and a first semiconductor structure SC1 including a vertically stacked first active layer 110, a first p-type semiconductor layer 112, and a first transparent electrode layer 114. The second light emitting portion LE2 may include a common n-type semiconductor layer COM_N and a second semiconductor structure SC2 including a vertically stacked second active layer 210, a second p-type semiconductor layer 212, and a second transparent electrode layer 214. The first semiconductor structure SC1 and the second semiconductor structure SC2 may be arranged on the common n-type semiconductor layer COM_N in a manner of being spaced apart from each other. That is, the common n-type semiconductor layer COM_N may be exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2.

[0063] The third light emitting portion LE3 may include a third p-type semiconductor layer 312, a third active layer 310, and a third n-type semiconductor layer 305 which are vertically stacked. According to one embodiment, in the third light emitting portion LE3, the third p-type semiconductor layer 312 and the third active layer 310 may be etched in a manner of exposing at least a portion of the third n-type semiconductor layer 305, thereby having a hole HL. The third light emitting portion LE3 may further include a first ohmic pattern OL1 electrically contacting the third n-type semiconductor layer 305 exposed through the hole HL and a second ohmic pattern OL2 electrically contacting the third p-type semiconductor layer 312.

[0064] According to an embodiment, the common n-type semiconductor layer COM_N may have a smaller width than the third light emitting portion LE3. In addition, the common n-type semiconductor layer COM_N and the third light emitting portion LE3 may have substantially the same width.

[0065] Each of the common n-type semiconductor layer COM_N and the third n-type semiconductor layer 306 may be a gallium nitride semiconductor layer doped with Si. Each of the first p-type semiconductor layer 112, the second p-type semiconductor layer 212, and the third p-type semiconductor layer 312 may be a gallium nitride semiconductor layer doped with Mg. Each of the first active layer 110, the second active layer 210, and the third active layer 310 may include a multi-quantum well structure (Multi QuantumWell: MQW), and its composition ratio may be determined in a manner to emit light of a desired wavelength. Each of the first transparent electrode layer 114 and the second transparent electrode layer 214 can use a transparent oxide layer (Transparent Conductive Oxide: TCO) such as tin oxide (ZnO: Zinc Oxide), indium tin oxide (ITO: Indium Tin Oxide), zinc-doped indium tin oxide (ZITO: Zinc-doped Indium Tin Oxide), zinc indium oxide (ZIO: Zinc Indium Oxide), gallium indium oxide (GIO: Gallium Indium Oxide), zinc tin oxide (ZTO: Zinc Tin Oxide), fluorine-doped tin oxide (FTO: Fluorine-doped Tin Oxide), gallium-doped zinc oxide (GZO: Gallium-doped Zinc Oxide), aluminum-doped zinc oxide (AZO: Aluminum-doped Zinc Oxide), etc.

[0066] The first ohmic pattern OL1 and the second ohmic pattern OL2 may respectively include a material having a higher conductivity than each of the first transparent electrode layer 114 and the second transparent electrode layer 214. Each of the first ohmic pattern OL1 and the second ohmic pattern OL2 may include at least one selected from the group consisting of Au, Ge, and Be, and a transparent oxide layer (Transparent Conductive Oxide: TCO) may be used. For example, the first ohmic pattern OL1 may include an Au / Be alloy, and the second ohmic pattern OL2 may include an Au / Ge alloy.

[0067] The light emitting element may further include a bonding portion AD between the first light emitting portion LE1 and the second light emitting portion LE2 and the third light emitting portion LE3. As an example, the bonding portion AD may be arranged to fill between the first semiconductor structure SC1 and the second semiconductor structure SC2 arranged on the common n-type semiconductor layer COM_N, and fill between the first semiconductor structure SC1 and the second semiconductor structure SC2 and the third light emitting portion LE3.

[0068] According to an embodiment, the bonding portion AD may include a transparent insulating material. The bonding portion AD may include glass, polymer, resist or polyimide. For example, the bonding portion AD may include spin-on-glass (SOG), benzocyclobutadiene (BCB), hydrogen silsesquioxane (HSQ) or SU-8 photoresist, etc.

[0069] According to an embodiment, in a case where the common n-type semiconductor layer COM_N is smaller than the third light emitting portion LE3 , the adhesive portion AD may be arranged to surround an outer sidewall of the common n-type semiconductor layer COM_N.

[0070] Although not shown, a color filter may be provided between the first light emitting unit LE1 and the second light emitting unit LE2 and the third light emitting unit LE3. The color filter may selectively pass the light emitted from the third light emitting unit LE3 and block the light emitted from the first light emitting unit LE1 and the second light emitting unit LE2.

[0071] The light-emitting element may further include: a first pad PD1, electrically connected to the first transparent electrode layer 114 of the first light-emitting portion LE1; a second pad PD2, electrically connected to the second transparent electrode layer 214 of the second light-emitting portion LE2; a third pad PD3, electrically connected to the second ohmic pattern OL2 of the third light-emitting portion LE3; and a common pad CPD, electrically connected to the first ohmic pattern OL1 and the common n-type semiconductor layer COM_N.

[0072] A passivation film PVT is further provided on the upper portion of the third n-type semiconductor layer 305 of the third light emitting portion LE3. The passivation film PVT may include SiN x 、TiN x 、TiO x 、TaO x 、ZrO x 、Al x O y and HfO x Each of the first pad PD1, the second pad PD2, the third pad PD3, and the common pad CPD may be disposed on the passivation film PVT.

[0073] The light-emitting element may further include: a first through electrode VE1, which penetrates the passivation film PVT, the third light-emitting portion LE3 and the bonding portion AD in a manner of electrically connecting the first pad PD1 and the first transparent electrode layer 114; a second through electrode VE2, which penetrates the passivation film PVT, the third light-emitting portion LE3 and the bonding portion AD in a manner of electrically connecting the second pad PD2 and the second transparent electrode layer 214; and a third through electrode VE3, which penetrates the passivation film PVT and the third light-emitting portion LE3 in a manner of electrically connecting the third pad PD3 and the second ohmic pattern OL2.

[0074] In addition, the light emitting element may further include: a fourth through electrode VE4, which penetrates the passivation film PVT and the third n-type semiconductor layer 305 in a manner of electrically connecting the common pad CPD and the third n-type semiconductor layer 305; and a fifth through electrode VE5, which penetrates the passivation film PVT, the third light emitting portion LE3, and the bonding portion AD in a manner of electrically connecting the common pad CPD and the common n-type semiconductor layer COM_N. According to an embodiment, the fifth through electrode VE5 may be electrically connected to the common n-type semiconductor layer COM_N exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2. As an example, the fifth through electrode VE5 may be arranged in the center of the light emitting element.

[0075] Each of the first through electrode VE1, the second through electrode VE2, the third through electrode VE3, the fourth through electrode VE4, and the fifth through electrode VE5 may include an electrode layer EL and a seed layer SL surrounding the outer sidewall of the electrode layer EL, and a barrier layer BL surrounding the seed layer SL. The electrode layer EL and the seed layer SD may include a metal such as Cu, and the barrier layer BL may include at least one selected from the group consisting of Ti, W, Ni, and Ta. For example, the barrier layer BL may include Ti / W, Ti / Ni, Ta, TaN, etc.

[0076] according to Figure 1b as well as Figure 1d In the illustrated embodiment, the first through electrode VE1 is integrated with the first pad PD1, and the portion extending onto the passivation film PVT is used as the first pad PD1. The second through electrode VE2 is integrated with the first pad PD2, and the portion extending onto the passivation film PVT is used as the second pad PD2. The third through electrode VE3 is integrated with the third pad PD3, and the portion extending onto the passivation film PVT is used as the third pad PD3. The fourth through electrode VE4 and the fifth through electrode VE5 are integrated with the common pad CPD, and the portions extending onto the passivation film PVT are used as the common pad CPD.

[0077] according to Figure 1cIn another embodiment shown, a first pad PD1 may be arranged on the first through electrode VE1, a second pad PD2 may be arranged on the second through electrode VE2, a third pad PD3 may be arranged on the third through electrode VE3, and a common pad CPD may be arranged on each of the fourth through electrode VE4 and the fifth through electrode VE5. Each of the first pad PD1, the second pad PD2, the third pad PD3 and the common pad CPD may include at least one selected from the group consisting of Au, Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Hf, Cr, Ti and Cu. In addition, alloys of the above-mentioned substances may be included.

[0078] In a flat perspective, Figure 1a As shown, when the substrate 100 has a quadrilateral structure, the first pad PD1, the second pad PD2, the third pad PD3 and the common pad CPD may be arranged at the corners of the substrate 100. According to an embodiment, when the fifth through electrode VE5 is arranged at the center of the light emitting element, the common pad CPD may have a structure extending from the edge to the central portion of the substrate 100. By extending the common pad CPD from the edge to the central portion of the substrate 100, the current concentration at the edge due to the common pad CPD being arranged only at the edge can be alleviated, and the current can be dispersed to a wider area.

[0079] Refer again Figure 1a and Figure 1b , the light emitting element may further include: a first metal pattern M1, arranged between the first transparent electrode layer 114 and the first through electrode VE1; a second metal pattern M2, arranged between the second transparent electrode layer 214 and the second through electrode VE2; a third metal pattern M3, arranged between the second ohmic pattern OL2 and the third through electrode VE3; a fourth metal pattern M4, arranged between the first ohmic pattern OL1 and the fourth through electrode VE4; and a fifth metal pattern M5, arranged between the common n-type semiconductor layer COM_N and the fifth through electrode VE5. Each of the first metal pattern M1, the second metal pattern M2, the third metal pattern M3, the fourth metal pattern M4, and the fifth metal pattern M5 may include at least one selected from the group consisting of Ti, Cr, Au, and Al. For example, each of the first metal pattern M1, the second metal pattern M2, the third metal pattern M3, the fourth metal pattern M4, and the fifth metal pattern M5 may include Cr / Au, Ti / Al, or Cr / Al.

[0080] The first metal pattern M1 may improve the ohmic characteristic between the first transparent electrode layer 114 and the first through electrode VE1 between the first transparent electrode layer 114 and the first through electrode VE1. The second metal pattern M2 may improve the ohmic characteristic between the second transparent electrode layer 214 and the second through electrode VE2 between the second transparent electrode layer 214 and the second through electrode VE2. The third metal pattern M3 may improve the ohmic characteristic between the second ohmic pattern OL2 and the third through electrode VE3 between the second ohmic pattern OL2 and the third through electrode VE3. The fourth metal pattern M4 may improve the ohmic characteristic between the first ohmic pattern OL1 and the fourth through electrode VE4 between the first ohmic pattern OL1 and the fourth through electrode VE4. The fifth metal pattern M5 may improve the ohmic characteristic between the common n-type semiconductor layer COM_N and the fifth through electrode VE5 between the common n-type semiconductor layer COM_N and the fifth through electrode VE5.

[0081] The light emitting element may further include an insulating film DL surrounding an outer sidewall of each of the first through electrode VE1, the second through electrode VE2, the third through electrode VE3, the fourth through electrode VE4, and the fifth through electrode VE5. The insulating film DL may include a material selected from SiN x 、TiN x 、TiO x 、TaO x 、ZrO x , HfO x 、Al x O y and SiO x At least one of the groups formed.

[0082] Reference Figure 1d , the light emitting element may further include: a first solder structure SS1 arranged on the first pad PD1; a second solder structure SS2 arranged on the second pad PD2; a third solder structure SS3 arranged on the third pad PD3; and a fourth solder structure SS4 arranged on the common pad CPD. As an example, each of the first solder structure SS1, the second solder structure SS2, the third solder structure SS3, and the fourth solder structure SS4 may have a structure in which a solder ball SD including In or Sn and a barrier film BRL including one of Ni, Co, Ti, or Fe are stacked.

[0083] Although the common pad CPD electrically connects the common n-type semiconductor layer COM_N and the third n-type semiconductor layer 305 as an example in this embodiment, the common pad CPD may also electrically connect the first transparent electrode layer 114 , the second transparent electrode layer 214 and the second ohmic pattern OL2 .

[0084] Figure 3a is a plan view for explaining a light emitting element according to another embodiment of the present invention, Figure 3b Yes Figure 3a A cross-sectional view of the light-emitting element taken along line AA'.

[0085] Reference Figure 3a and Figure 3b The light emitting element may include a substrate 100 , a first light emitting portion LE1 and a second light emitting portion LE2 arranged on the same plane on a first surface 102 of the substrate 100 , and a third light emitting portion LE3 arranged on the first light emitting portion LE1 and the second light emitting portion LE2 .

[0086] According to one embodiment, when the second surface 104 facing the first surface 102 of the substrate 100 is a light extraction surface, the third light emitting unit LE3 emits red light, the first light emitting unit LE1 emits blue light or green light, and the second light emitting unit LE2 can emit green light or blue light.

[0087] The first light emitting portion LE1 may include a common n-type semiconductor layer COM_N and a first semiconductor structure SC1 including a vertically stacked first active layer 110, a first p-type semiconductor layer 112, and a first transparent electrode layer 114. The second light emitting portion LE2 may include a common n-type semiconductor layer COM_N and a second semiconductor structure SC2 including a vertically stacked second active layer 210, a second p-type semiconductor layer 212, and a second transparent electrode layer 214. The first semiconductor structure SC1 and the second semiconductor structure SC2 may be arranged on the common n-type semiconductor layer COM_N in a manner spaced apart from each other. That is, the common n-type semiconductor layer COM_N may be exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2. The third light emitting portion LE3 may include a vertically stacked third transparent electrode layer 314, a third p-type semiconductor layer 312, a third active layer 310, and a third n-type semiconductor layer 305.

[0088] According to one embodiment, each of the first transparent electrode layer 114, the second transparent electrode layer 214, and the third transparent electrode layer 314 may use a transparent oxide layer (Transparent Conductive Oxide: TCO) such as tin oxide (ZnO: Zinc Oxide), indium tin oxide (ITO: Indium Tin Oxide), zinc-doped indium tin oxide (ZITO: Zinc-doped Indium Tin Oxide), zinc indium oxide (ZIO: Zinc Indium Oxide), gallium indium oxide (GIO: Gallium Indium Oxide), zinc tin oxide (ZTO: Zinc Tin Oxide), fluorine-doped tin oxide (FTO: Fluorine-doped Tin Oxide), gallium-doped zinc oxide (GZO: Gallium-doped Zinc Oxide), aluminum-doped zinc oxide (AZO: Aluminum-doped Zinc Oxide), etc.

[0089] The light emitting element may further include a bonding portion AD between the first light emitting portion LE1 and the second light emitting portion LE2 and the third light emitting portion LE3. As an example, the bonding portion AD may be arranged to fill between the first semiconductor structure SC1 and the second semiconductor structure SC2 arranged on the common n-type semiconductor layer COM_N, and fill between the first semiconductor structure SC1 and the second semiconductor structure SC2 and the third light emitting portion LE3. For example, the bonding portion AD may include a transparent material having bonding properties such as SOG, BCB, HSQ or SU-8 photoresist.

[0090] The light-emitting element may further include: a first pad PD1, electrically connected to the first transparent electrode layer 114 of the first light-emitting portion LE1; a second pad PD2, electrically connected to the second transparent electrode layer 214 of the second light-emitting portion LE2; a third pad PD3, electrically connected to the third transparent electrode layer 314 of the third light-emitting portion LE3; and a common pad CPD, electrically connected to the third n-type semiconductor layer 305 and the common n-type semiconductor layer COM_N.

[0091] A passivation film PVT is also provided on the upper part of the third n-type semiconductor layer 305 of the third light emitting portion LE3, and each of the first pad PD1, the second pad PD2 and the third pad PD3 can be arranged on the passivation film PVT, and the common pad CPD can penetrate the passivation film PVT to electrically connect the third n-type semiconductor layer 305 and the common n-type semiconductor layer COM_N.

[0092] The light emitting element may further include: a first through electrode VE1, which penetrates the passivation film PVT, the third light emitting portion LE3, and the bonding portion AD in a manner of electrically connecting the first pad PD1 and the first transparent electrode layer 114; a second through electrode VE2, which penetrates the passivation film PVT, the third light emitting portion LE3, and the bonding portion AD in a manner of electrically connecting the second pad PD2 and the second transparent electrode layer 214; and a third through electrode VE3, which penetrates the passivation film PVT and the third light emitting portion LE3 in a manner of electrically connecting the third pad PD3 and the third transparent electrode 314. According to an embodiment, the first through electrode VE1 and the second through electrode VE2 may have the same height.

[0093] In addition, the light emitting element may further include a fourth through electrode VE4 that penetrates the third light emitting portion LE3 and the bonding portion AD to electrically connect the common pad CPD that is in electrical contact with the third n-type semiconductor layer 305 to the common n-type semiconductor layer COM_N. According to one embodiment, the fourth through electrode VE4 may be arranged between the first semiconductor structure SC1 and the second semiconductor structure SC2. As an example, the fourth electrode VE4 may be arranged in the center of the substrate 100.

[0094] Each of the first through electrode VE1, the second through electrode VE2, the third through electrode VE3, and the fourth through electrode VE4 may include an electrode layer EL, a seed layer SL surrounding an outer sidewall of the electrode layer EL, and a barrier layer BL surrounding the seed layer SL. The electrode layer EL and the seed layer SL may include a metal such as Cu, and the barrier layer BL may include at least one selected from the group consisting of Ti, W, Ni, and Ta. For example, the barrier layer BL may include Ti / W, Ti / Ni, or Ta / TaN.

[0095] In a plan view, in the case where the substrate 100 has a quadrilateral structure, each of the first pad PD1 , the second pad PD2 , and the third pad PD3 may be disposed at a corner portion of the substrate 100 , and the common pad CPD may be disposed at the center of the substrate 100 .

[0096] The light emitting element may further include: a first metal pattern M1, arranged between the first transparent electrode layer 114 and the first through electrode VE1; a second metal pattern M2, arranged between the second transparent electrode layer 214 and the second through electrode VE2; a third metal pattern M3, arranged between the third transparent electrode layer 314 and the third through electrode VE3; and a fourth metal pattern M4, arranged between the common n-type semiconductor layer COM_N and the fourth through electrode VE4. Each of the first metal pattern M1, the second metal pattern M2, the third metal pattern M3, and the fourth metal pattern M4 may include at least one selected from the group consisting of Ti, Cr, Au, and Al. For example, each of the first metal pattern M1, the second metal pattern M2, the third metal pattern M3, and the fourth metal pattern M4 may include Cr / Au, Ti / Al, or Cr / Al.

[0097] The light emitting element may further include an insulating film DL surrounding an outer side wall of each of the first through electrode VE1 , the second through electrode VE2 , the third through electrode VE3 , and the fourth through electrode VE4 .

[0098] Because in Figure 3a as well as Figure 3b The structure and characteristics of the light-emitting element are not described in detail. Figure 1a and Figure 1b The structure and characteristics of the light-emitting elements described in are the same, so their detailed description is omitted.

[0099] Figure 4 is a cross-sectional view for explaining a light emitting element according to still another embodiment of the present invention. Figure 4 The plan view of the light emitting element is shown in Figure 3a .

[0100] Reference Figure 3a and Figure 4 The light emitting element may include a substrate 100, a first light emitting portion LE1 and a second light emitting portion LE2 arranged on the same plane on a first surface 102 of the substrate 100, and a third light emitting portion LE3 arranged on the first light emitting portion LE1 and the second light emitting portion LE2. A second surface 104 facing the first surface 102 of the substrate 100 may be a light extraction surface.

[0101] The first light emitting portion LE1 may include a common n-type semiconductor layer COM_N and a first semiconductor structure SC1 including a vertically stacked first active layer 110, a first p-type semiconductor layer 112, and a first transparent electrode layer 114. The second light emitting portion LE2 may include a common n-type semiconductor layer COM_N and a second semiconductor structure SC2 including a vertically stacked second active layer 210, a second p-type semiconductor layer 212, and a second transparent electrode layer 214. The first semiconductor structure SC1 and the second semiconductor structure SC2 may be arranged on the common n-type semiconductor layer COM_N in a manner of being spaced apart from each other. That is, the common n-type semiconductor layer COM_N may be exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2.

[0102] The third light emitting portion LE3 may include a third transparent electrode layer 314, a third p-type semiconductor layer 312, a third active layer 310, and a third n-type semiconductor layer 305 that are vertically stacked. According to one embodiment, the third light emitting portion LE3 may include a hole HL that etches a portion of the third transparent electrode layer 314, the third p-type semiconductor layer 312, and the third active layer 310 to expose a portion of the third n-type semiconductor layer 305. The hole HL of the third light emitting portion LE3 may be a position corresponding to at least a portion of the common n-type semiconductor layer COM_N exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2. In addition, the width W1 of the hole HL may be smaller than the width W2 of the common n-type semiconductor layer COM_N exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2.

[0103] The light emitting element may further include a bonding portion AD between the first light emitting portion LE1 and the second light emitting portion LE2 and the third light emitting portion LE3. As an example, the bonding portion AD may be arranged to fill between the first semiconductor structure SC1 and the second semiconductor structure SC2 arranged on the common n-type semiconductor layer COM_N, and to fill between the first semiconductor structure SC1 and the second semiconductor structure SC2 and the third light emitting portion LE3. According to an embodiment, the bonding portion AD may be arranged to fill the inside of the hole HL of the third light emitting portion LE3.

[0104] The light emitting element may further include a first through electrode VE1 and a first pad PD1 electrically connected to the first transparent electrode layer 114, a second through electrode VE2 and a second pad PD2 electrically connected to the second transparent electrode layer 214, a third through electrode VE3 and a third pad PD3 electrically connected to the third transparent electrode layer 314, and a fourth through electrode VE4 and a common pad CPD electrically connected to the third n-type semiconductor layer 305 and the common n-type semiconductor layer COM_N. The light emitting element may further include a passivation film PVT on the third n-type semiconductor layer 305 and an insulating film DL surrounding the outer sidewall of each of the first through electrode VE1, the second through electrode VE2, and the third through electrode VE3. According to an embodiment, the insulating film DL may not be arranged on the outer sidewall of the fourth through electrode VE4.

[0105] According to an embodiment, the common pad CPD may penetrate the passivation film PVT and be in electrical contact with the third n-type semiconductor layer 305. The fourth through electrode VE4 electrically connected to the common pad CPD may penetrate the third n-type semiconductor layer 305 and be arranged in the hole HL of the third light emitting portion LE3. Although the insulating film DL is not arranged on the outer side wall of the fourth through electrode VE4, the third active layer 310, the third p-type semiconductor layer 312 and the third transparent electrode layer 314 of the third light emitting portion LE3 may be insulated by arranging an adhesive portion AD including a transparent insulating material inside the hole HL of the third light emitting portion LE3. In addition, since the adhesive portion AD is also filled between the first semiconductor structure SC1 and the second semiconductor structure SC2, the fourth through electrode VE4 electrically in contact with the common n-type semiconductor layer COM_N may be insulated from the first semiconductor structure SC1 and the second semiconductor structure SC2.

[0106] Because in Figure 4 The structure and characteristics of the light-emitting element are not described in detail. Figure 1a and Figure 1b , Figure 3a and Figure 3b The structure and characteristics of the light-emitting elements described in are the same, so their detailed description is omitted.

[0107] Figure 5a and Figure 5b is a cross-sectional view for explaining a light emitting element according to still another embodiment of the present invention. Figure 5a and Figure 5b The plan view of the light emitting element is shown in Figure 3a .

[0108] Reference Figure 3a and Figure 5a and Figure 5bThe light emitting element may include a substrate 100, a first light emitting portion LE1 and a second light emitting portion LE2 arranged on the same plane on a first surface 102 of the substrate 100, and a third light emitting portion LE3 arranged on the first light emitting portion LE1 and the second light emitting portion LE2. A second surface 104 facing the first surface 102 of the substrate 100 may be a light extraction surface.

[0109] The first light emitting portion LE1 may include a common n-type semiconductor layer COM_N and a first semiconductor structure SC1 including a vertically stacked first active layer 110, a first p-type semiconductor layer 112, and a first transparent electrode layer 114. The second light emitting portion LE2 may include a common n-type semiconductor layer COM_N and a second semiconductor structure SC2 including a vertically stacked second active layer 210, a second p-type semiconductor layer 212, and a second transparent electrode layer 214. The first semiconductor structure SC1 and the second semiconductor structure SC2 may be arranged on the common n-type semiconductor layer COM_N in a manner of being spaced apart from each other. That is, the common n-type semiconductor layer COM_N may be exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2.

[0110] The third light emitting portion LE3 may include a third transparent electrode layer 314, a third p-type semiconductor layer 312, a third active layer 310, and a third n-type semiconductor layer 305 that are vertically stacked. According to one embodiment, the third light emitting portion LE3 may include a hole HL that etches a portion of the third transparent electrode layer 314, the third p-type semiconductor layer 312, and the third active layer 310 to expose a portion of the third n-type semiconductor layer 305. The hole HL of the third light emitting portion LE3 may be a position corresponding to at least a portion of the common n-type semiconductor layer COM_N exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2. In addition, the width W1 of the hole HL may be smaller than the width W2 of the common n-type semiconductor layer COM_N exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2.

[0111] The light emitting element may further include: a first passivation film PVT1 covering the first semiconductor structure SC1 on the first transparent electrode layer 114; a second passivation film PVT2 covering the second semiconductor structure SC2 on the second transparent electrode layer 214; a third passivation film PVT3 covering one side of the third light emitting portion LE3 on the third transparent electrode layer 314; and a fourth passivation film PVT4 covering the other side facing the one side of the third light emitting portion LE3 on the third n-type semiconductor layer 305. For example, each of the first passivation film PVT1, the second passivation film PVT2, the third passivation film PVT3 and the fourth passivation film PVT4 may include a material selected from SiN x 、TiN x 、TiO x、TaO x 、ZrO x 、Al x O y and HfO x At least one insulating substance in the group consisting of the above.

[0112] According to an embodiment, since the first passivation film PVT1 and the second passivation film PVT2 are not disposed on the common n-type semiconductor layer COM_N disposed between the first semiconductor structure SC1 and the second semiconductor structure SC2, respectively, the common n-type semiconductor layer COM_N disposed between the first semiconductor structure SC1 and the second semiconductor structure SC2 can be exposed. In addition, since the third passivation film PVT3 is not disposed on the bottom surface of the hole HL, the third n-type semiconductor layer 305 on the bottom surface of the hole HL can be exposed.

[0113] The light emitting element may further include a bonding portion AD between the first light emitting portion LE1 and the second light emitting portion LE2 and the third light emitting portion LE3. As an example, the bonding portion AD may be arranged to fill between the first semiconductor structure SC1 and the second semiconductor structure SC2 arranged on the common n-type semiconductor layer COM_N, and to fill between the first semiconductor structure SC1 and the second semiconductor structure SC2 and the third light emitting portion LE3. According to an embodiment, the bonding portion AD may be arranged to fill the inside of the hole HL of the third light emitting portion LE3.

[0114] According to an embodiment, the bonding portion AD may include a transparent, conductive material having bonding properties, such as a transparent oxide layer (Transparent Conductive Oxide: TCO), an isotropic conductive adhesive (Isotropic Conductive Adhesives: ICAs), anisotropic conductive adhesives (anisotropic conductive adhesives: ACAs), and the like.

[0115] The light emitting element may further include a first through electrode VE1 and a first pad PD1 electrically connected to the first transparent electrode layer 114, a second through electrode VE2 and a second pad PD2 electrically connected to the second transparent electrode layer 214, a third through electrode VE3 and a third pad PD3 electrically connected to the third transparent electrode layer 314, and a fourth through electrode VE4 and a common pad CPD electrically connected to the third n-type semiconductor layer 305. In addition, the light emitting element may further include an insulating film DL surrounding the passivation film PVT and the outer sidewalls of each of the first through electrode VE1, the second through electrode VE2, and the third through electrode VE3 on the third n-type semiconductor layer 305. According to an embodiment, the insulating film DL may not be arranged on the outer sidewall of the fourth through electrode VE4.

[0116] According to Figure 5a In the embodiment shown, the fourth through electrode VE4 can penetrate the passivation film PVT and electrically contact one side of the third n-type semiconductor layer 305. As described above, the fourth through electrode VE4 can be electrically connected to one side of the third n-type electrode 305 by making the bonding portion AD include a conductive material, and the third n-type semiconductor layer 305 exposed through the hole HL of the third light emitting portion LE3 can be electrically contacted with the bonding portion AD. In addition, the bonding portion AD can be electrically contacted with the common n-type semiconductor layer COM_N exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2. Therefore, the common pad CPD can be electrically connected to the third n-type semiconductor layer 305, the bonding portion AD, and the common n-type semiconductor layer COM_N through the fourth through electrode VE4.

[0117] according to Figure 5b In another embodiment shown, the fourth through electrode VE4 can penetrate the passivation film PVT and the third n-type semiconductor layer 305 of the third light emitting portion LE3 and be electrically connected to the third n-type semiconductor layer 305. In this case, the outer sidewall of the fourth through electrode VE4 can be electrically in contact with the third n-type semiconductor layer 305, thereby increasing the contact area between the fourth through electrode VE4 and the third n-type semiconductor layer 305. In addition, the fourth through electrode VE4 can be electrically in contact with the bonding portion AD filled in the hole HL of the third light emitting portion LE3. In addition, the bonding portion AD can be electrically in contact with the common n-type semiconductor layer COM_N exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2. Therefore, the common pad CPD can be electrically connected to the third n-type semiconductor layer 305, the bonding portion AD, and the common n-type semiconductor layer COM_N through the fourth through electrode VE4.

[0118] Although in Figure 5bThe fourth through electrode VE4 is shown to penetrate the passivation film PVT and the third n-type semiconductor layer 305 of the third light emitting portion LE3, but the fourth through electrode VE4 may also penetrate the passivation film PVT and the third n-type semiconductor layer 305 of the third light emitting portion LE3, and penetrate at least a portion of the bonding portion AD. Alternatively, the fourth through electrode VE4 may also penetrate the passivation film PVT and the third n-type semiconductor layer 305 of the third light emitting portion LE3, and penetrate the bonding portion AD to contact the common n-type semiconductor layer COM_N exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2.

[0119] Because in Figure 5a and Figure 5b The composition and characteristics of the light-emitting element are not described in detail. Figure 1a and Figure 1b , Figure 3a and Figure 3b , Figure 4 The structure and characteristics of the light-emitting elements described in are the same, so their detailed description is omitted.

[0120] Figure 6 is a cross-sectional view for explaining a light emitting element according to still another embodiment of the present invention. Figure 6 The plan view of the light emitting element is shown in Figure 3a .

[0121] Reference Figure 3a and Figure 6 The light emitting element may include a substrate 100, a first light emitting portion LE1 and a second light emitting portion LE2 arranged on the same plane on a first surface 102 of the substrate 100, and a third light emitting portion LE3 arranged on the first light emitting portion LE1 and the second light emitting portion LE2. A second surface 104 facing the first surface 102 of the substrate 100 may be a light extraction surface.

[0122] The first light emitting portion LE1 may include a common n-type semiconductor layer COM_N and a first semiconductor structure SC1 including a vertically stacked first active layer 110, a first p-type semiconductor layer 112, and a first transparent electrode layer 114. The second light emitting portion LE2 may include a common n-type semiconductor layer COM_N and a second semiconductor structure SC2 including a vertically stacked second active layer 210, a second p-type semiconductor layer 212, and a second transparent electrode layer 214. The first semiconductor structure SC1 and the second semiconductor structure SC2 may be arranged on the common n-type semiconductor layer COM_N in a manner of being spaced apart from each other. That is, the common n-type semiconductor layer COM_N may be exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2.

[0123] The third light emitting portion LE3 may include a third n-type semiconductor layer 305, a third active layer 310, a third p-type semiconductor layer 312, and a third transparent electrode layer 314 that are vertically stacked. According to one embodiment, the third light emitting portion LE3 may include a hole HL that etches a portion of the third transparent electrode layer 314, the third p-type semiconductor layer 312, and the third active layer 310 to expose a portion of the third n-type semiconductor layer 305. The hole HL of the third light emitting portion LE3 may be a position corresponding to at least a portion of the common n-type semiconductor layer COM_N exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2. In addition, the width W1 of the hole HL may be smaller than the width W2 of the common n-type semiconductor layer COM_N exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2.

[0124] The light emitting element may further include a bonding portion AD between the first light emitting portion LE1 and the second light emitting portion LE2 and the third light emitting portion LE3. As an example, the bonding portion AD may be arranged to fill between the first semiconductor structure SC1 and the second semiconductor structure SC2 arranged on the common n-type semiconductor layer COM_N, and fill between the first semiconductor structure SC1 and the second semiconductor structure SC2 and the third light emitting portion LE3. For example, the bonding portion AD may include a transparent material having bonding properties such as SOG, BCB, HSQ or SU-8 photoresist.

[0125] The light-emitting element may also include: a first transparent electrode layer 114 and a first pad PD1 electrically connected to the first light-emitting portion LE1; a second through electrode VE2 and a second pad PD2 electrically connected to the second transparent electrode layer 214; a third through electrode VE3 and a third pad PD3 electrically connected to the third transparent electrode layer 314; and a fourth through electrode VE4 and a common pad CPD electrically connected to the third n-type semiconductor layer 305 and the common n-type semiconductor layer COM_N.

[0126] The light emitting element may further include: a passivation film PVT disposed on the third transparent electrode layer 314; and an insulating film DL surrounding the outer sidewall of each of the first through electrode VE1 and the second through electrode VE2. According to an embodiment, the passivation film PVT may fill the hole HL of the third light emitting portion LE3 and extend toward the upper surface of the third transparent electrode layer 314. Also, the outer sidewall of each of the third through electrode VE3 and the fourth through electrode VE4 may not be disposed with the insulating film DL.

[0127] According to an embodiment, the third through electrode VE3 may penetrate the passivation film PVT to electrically contact the third transparent electrode layer 314. Since the third through electrode VE3 is insulated from the outside by the passivation film PVT, an additional insulating film DL surrounding the outer sidewall of the third through electrode VE3 may not be required.

[0128] According to an embodiment, the fourth through electrode VE4 may penetrate the passivation film PVT filling the hole HL of the third light emitting portion LE3, the third n-type semiconductor layer 305, and the bonding portion AD. Since the fourth through electrode VE4 penetrates the hole HL filled with the passivation film PVT, the insulating film DL surrounding the outer sidewall of the fourth through electrode VE4 may not be required. Furthermore, since the insulating film DL does not surround the outer sidewall, the outer sidewall of the fourth through electrode VE4 may be electrically in contact with the third n-type semiconductor layer 305 during the period when the fourth through electrode VE4 penetrates the third n-type semiconductor layer 305, thereby increasing the contact area between the fourth through electrode VE4 and the third n-type semiconductor layer 305. Furthermore, the fourth through electrode VE4 may penetrate the bonding portion AD including an insulating substance and be in electrical contact with the common n-type semiconductor layer COM_N. Accordingly, the fourth through electrode VE4 may be in electrical contact with the third n-type semiconductor layer 305 and the common n-type semiconductor layer COM_N.

[0129] Because in Figure 6 The structure and characteristics of the light-emitting element are not described in detail. Figure 1a , Figure 1b , Figure 3a , Figure 3b , Figure 4 , Figure 5a as well as Figure 5b The structure and characteristics of the light-emitting elements described in are the same, so their detailed description is omitted.

[0130] Figure 7 is a cross-sectional view for explaining a light emitting element according to still another embodiment of the present invention. Figure 7 The plan view of the light emitting element is shown in Figure 3a .

[0131] Reference Figure 3a and Figure 7 The light emitting element may include a substrate 100, a first light emitting portion LE1 and a second light emitting portion LE2 arranged on the same plane on a first surface 102 of the substrate 100, and a third light emitting portion LE3 arranged on the first light emitting portion LE1 and the second light emitting portion LE2. A second surface 104 facing the first surface 102 of the substrate 100 may be a light extraction surface.

[0132] The first light emitting portion LE1 may include a common n-type semiconductor layer COM_N and a first semiconductor structure SC1 including a vertically stacked first active layer 110, a first p-type semiconductor layer 112, and a first transparent electrode layer 114. The second light emitting portion LE2 may include a common n-type semiconductor layer COM_N and a second semiconductor structure SC2 including a vertically stacked second active layer 210, a second p-type semiconductor layer 212, and a second transparent electrode layer 214. The first semiconductor structure SC1 and the second semiconductor structure SC2 may be arranged on the common n-type semiconductor layer COM_N in a manner of being spaced apart from each other. That is, the common n-type semiconductor layer COM_N may be exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2.

[0133] The third light emitting portion LE3 may include a third n-type semiconductor layer 305, a third active layer 310, a third p-type semiconductor layer 312, and a third transparent electrode layer 314 that are vertically stacked. According to one embodiment, the third light emitting portion LE3 may include a hole HL that etches a portion of the third transparent electrode layer 314, the third p-type semiconductor layer 312, and the third active layer 310 to expose a portion of the third n-type semiconductor layer 305. The hole HL of the third light emitting portion LE3 may be a position corresponding to at least a portion of the common n-type semiconductor layer COM_N exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2. In addition, the width W1 of the hole HL may be smaller than the width W2 of the common n-type semiconductor layer COM_N exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2.

[0134] The light emitting element may further include: a first passivation film PVT1, covering the first semiconductor structure SC1 on the first transparent electrode layer 114; a second passivation film PVT2, covering the second semiconductor structure SC2 on the second transparent electrode layer 214; a third passivation film PVT3, covering one side of the third light emitting portion LE3 on the third transparent electrode layer 314, and filling the hole HL of the third light emitting portion LE3. For example, each of the first passivation film PVT1, the second passivation film PVT2, and the third passivation film PVT3 may include a material selected from SiN x 、TiN x 、TiO x 、TaO x 、ZrO x , HfO x 、AlxO y and SiO xAccording to an embodiment, since the first passivation film PVT1 and the second passivation film PVT2 are not disposed on the common n-type semiconductor layer COM_N disposed between the first semiconductor structure SC1 and the second semiconductor structure SC2, respectively, the common n-type semiconductor layer COM_N disposed between the first semiconductor structure SC1 and the second semiconductor structure SC2 may be exposed.

[0135] The light emitting element may further include: a first passivation film PVT1, covering the upper surface and side surfaces of the first semiconductor structure SC1; a second passivation film PVT2, covering the upper surface and side surfaces of the second semiconductor structure SC2; and a third passivation film PVT3, covering the inner sidewall of the hole HL of the third light emitting portion LE3 and the upper surface and side surfaces of the third transparent electrode layer 314. For example, each of the first passivation film PVT1, the second passivation film PVT2, and the third passivation film PVT3 may include a material selected from SiN x 、TiN x 、TiO x 、TaO x 、ZrO x , HfO x 、Al x O y and SiO x At least a portion of the common n-type semiconductor layer COM_N and the third n-type semiconductor layer 305 may be exposed through the first passivation film PVT1, the second passivation film PVT2, and the third passivation film PVT3.

[0136] The light emitting element may further include a bonding portion AD between the first light emitting portion LE1 and the second light emitting portion LE2 and the third light emitting portion LE3. As an example, the bonding portion AD may be arranged to fill between the first semiconductor structure SC1 and the second semiconductor structure SC2 arranged on the common n-type semiconductor layer COM_N, and to fill between the first semiconductor structure SC1 and the second semiconductor structure SC2 and the third light emitting portion LE3. According to an embodiment, the bonding portion AD may be arranged to fill the inside of the hole HL of the third light emitting portion LE3.

[0137] According to an embodiment, the bonding portion AD may include a transparent and conductive material having bonding properties, such as a transparent oxide layer (Transparent Conductive Oxide: TCO), an isotropic conductive adhesive (Isotropic Conductive Adhesives: ICAs), anisotropic conductive adhesives (anisotropic conductive adhesives: ACAs), and the like.

[0138] The light emitting element may further include an insulating film DL surrounding an outer sidewall of each of the first through electrode VE1 and the second through electrode VE2. According to an embodiment, the insulating film DL may not be disposed on an outer sidewall of each of the third through electrode VE3 and the fourth through electrode VE4.

[0139] According to an embodiment, the third through electrode VE3 may penetrate the passivation film PVT3 to electrically contact the third transparent electrode layer 314. Since the third through electrode VE3 is insulated from the outside by the passivation film PVT, an additional insulating film DL surrounding the outer sidewall of the third through electrode VE3 may not be required.

[0140] According to an embodiment, the fourth through electrode VE4 may penetrate the third passivation film PVT3 filling the hole HL of the third light emitting portion LE3, the third n-type semiconductor layer 305, and the bonding portion AD. The fourth through electrode VE4 may not need the insulating film DL surrounding the outer sidewall of the fourth through electrode VE4 by penetrating the hole HL filled with the third passivation film PVT3. In addition, since the insulating film DL does not surround the outer sidewall, during the period when the fourth through electrode VE4 penetrates the third n-type semiconductor layer 305, the outer sidewall of the fourth through electrode VE4 may be electrically in contact with the third n-type semiconductor layer 305, thereby increasing the contact area between the fourth through electrode VE4 and the third n-type semiconductor layer 305. In addition, the fourth through electrode VE4 may penetrate the bonding portion AD including an insulating material and electrically contact the common n-type semiconductor layer COM_N. In addition, the bonding portion AD may electrically contact the common n-type semiconductor layer COM_N exposed between the first semiconductor structure SC1 and the second semiconductor structure SC2. Therefore, the common pad CPD may be electrically connected to the third n-type semiconductor layer 305 , the adhesive portion AD, and the common n-type semiconductor layer COM_N through the fourth through electrode VE4 .

[0141] Because in Figure 7 The structure and characteristics of the light-emitting element are not described in detail. Figure 1a , Figure 1b , Figure 3a , Figure 3b , Figure 4 , Figure 5a , Figure 5b as well as Figure 6 The structure and characteristics of the light-emitting elements described in are the same, so their detailed description is omitted.

[0142] Figure 8a and Figure 8b is a cross-sectional view for explaining a light emitting element according to still another embodiment of the present invention. Figure 8a and Figure 8b The plan view of the light emitting element is shown in Figure 3a .

[0143] Reference Figure 3a , Figure 8a and Figure 8b The light emitting element may include a substrate 100, a first light emitting portion LE1 and a second light emitting portion LE2 arranged on the same plane on a first surface 102 of the substrate 100, and a third light emitting portion LE3 arranged on the first light emitting portion LE1 and the second light emitting portion LE2. A second surface 104 facing the first surface 102 of the substrate 100 may be a light extraction surface.

[0144] The first light emitting portion LE1 may include a vertically stacked first n-type semiconductor layer 105, a first active layer 110, a first p-type semiconductor layer 112, and a first transparent electrode layer 114. The second light emitting portion LE2 may include a vertically stacked second n-type semiconductor layer 205, a second active layer 210, a second p-type semiconductor layer 212, and a second transparent electrode layer 214. The third light emitting portion LE3 may include a vertically stacked third transparent electrode layer 314, a third p-type semiconductor layer 312, a third active layer 310, and a third n-type semiconductor layer 305.

[0145] according to Figure 8aIn the illustrated embodiment, the substrate 100 may be a conductive substrate 100 such as Si or SiC. The first light emitting portion LE1 and the second light emitting portion LE2 are separated from each other, and a portion of the substrate 100 may be exposed through the first light emitting portion LE1 and the second light emitting portion LE2. The first light emitting portion LE1 may be bonded to the first surface 102 of the substrate 100 through the first adhesive layer BDL1. The second light emitting portion LE2 may be separated from the first light emitting portion LE1 and bonded to the first surface 102 of the substrate 100 through the second adhesive layer BDL2. For example, the first adhesive layer BDL1 and the second adhesive layer BDL2 may include conductive materials such as solder or metal adhesive materials (e.g., Au, AuSn, CuSn, etc.), transparent oxide layers (Transparent Conductive Oxide: TCO), isotropic conductive adhesives (Isotropic Conductive Adhesives: ICAs), anisotropic conductive adhesives (anisotropic conductive adhesives: ACAs), etc. The first n-type semiconductor layer 105 of the first light emitting portion LE1 may be electrically connected to the substrate 100 through the first adhesive layer BDL1, and the second n-type semiconductor layer 205 of the second light emitting portion LE2 may be electrically connected to the substrate 100 through the second adhesive layer BDL2. Therefore, the substrate 100, the first n-type semiconductor layer 105, and the second n-type semiconductor layer 205 may be electrically connected to each other.

[0146] According to Figure 8bIn another embodiment shown in FIG. 1 , the substrate 100 may be a non-conductive substrate 100. The first light emitting portion LE1 and the second light emitting portion may be arranged to be spaced apart from each other, and an adhesive layer BDL may be arranged between the first light emitting portion LE1 and the second light emitting portion LE2 and the first surface 102 of the substrate 100. The first light emitting portion LE1 and the second light emitting portion LE2 may be bonded to each other to be spaced apart from each other on the first surface 102 of the substrate 100 through the adhesive layer BDL. For example, the adhesive layer BDL may include conductive materials such as metal patterns and solder or metal adhesive materials (e.g., Au, AuSn, CuSn, etc.), transparent oxide layers (Transparent Conductive Oxide: TCO), isotropic conductive adhesives (Isotropic Conductive Adhesives: ICAs), anisotropic conductive adhesives (anisotropic conductive adhesives: ACAs), etc. The adhesive layer BDL may be electrically connected to the first n-type semiconductor layer 105 of the first light emitting portion LE1, and electrically connected to the second n-type semiconductor layer 205 of the second light emitting portion LE2. And, it may extend between the first light emitting portion LE1 and the second light emitting portion LE2. Therefore, the adhesive layer BDL, the first n-type semiconductor layer 105, and the second n-type semiconductor layer 205 may be electrically connected to each other.

[0147] Reference Figure 8a and Figure 8b The third light emitting portion LE3 may include a hole HL in which a portion of the third transparent electrode layer 314 , the third p-type semiconductor layer 312 , and the third active layer 310 are etched to expose a portion of the third n-type semiconductor layer 305 . Figure 8a In the embodiment, the hole HL of the third light emitting portion LE3 may be located at a position corresponding to at least a portion of the substrate 100 exposed between the first light emitting portion LE1 and the second light emitting portion LE2. Also, the width W1 of the hole HL may be smaller than the width W2 of the substrate 100 exposed between the first light emitting portion LE1 and the second light emitting portion LE2. Figure 8b , the hole HL of the third light emitting portion LE3 may be located at a position corresponding to at least a portion of the adhesive layer BDL exposed between the first light emitting portion LE1 and the second light emitting portion LE2. Also, the width W1 of the hole HL may be smaller than the width W2 of the adhesive layer BDL exposed between the first light emitting portion LE1 and the second light emitting portion LE2.

[0148] The light emitting element may further include a bonding portion AD between the first light emitting portion LE1 and the second light emitting portion LE2 and the third light emitting portion LE3 to bond the first light emitting portion LE1 and the second light emitting portion LE2 and the third light emitting portion LE3. As an example, it may be arranged to fill between the first light emitting portion LE1 and the second light emitting portion LE2 arranged on the substrate 100, and fill between the first light emitting portion LE1 and the second light emitting portion LE2 and the third light emitting portion LE3. For example, the bonding portion AD may include a transparent material having bonding properties such as SOG, BCB, HSQ or SU-8 photoresist. According to an embodiment, the light emitting element may be arranged to fill the hole HL of the third light emitting portion LE3.

[0149] The light emitting element may further include a first through electrode VE1 and a first pad PD1 electrically connected to the first transparent electrode layer 114, a second through electrode VE2 and a second pad PD2 electrically connected to the second transparent electrode layer 214, and a third through electrode VE3 and a third pad PD3 electrically connected to the third transparent electrode layer 314. Figure 8a In one example, the fourth through electrode VE4 and the common pad CPD which are electrically connected to the third n-type semiconductor layer 305 and the substrate 100 and electrically connected to the first n-type semiconductor layer 105, the second n-type semiconductor layer 205, and the third n-type semiconductor layer 305 may also be included. Figure 8b As another example, a fourth through electrode VE4 and a common pad CPD that are electrically connected to the third n-type semiconductor layer 305 and the adhesive layer BDL and electrically connected to the first n-type semiconductor layer 105 , the second n-type semiconductor layer 205 , and the third n-type semiconductor layer 305 may be further included.

[0150] The light emitting element may further include a passivation film PVT disposed on the third n-type semiconductor layer 305 and an insulating film DL surrounding an outer side wall of each of the first through electrode VE1 , the second through electrode VE2 , and the third through electrode VE3 .

[0151] According to an embodiment, the common pad CPD may penetrate the passivation film PVT and be in electrical contact with the third n-type semiconductor layer 305. The fourth through electrode VE4 electrically connected to the common pad CPD may penetrate the third n-type semiconductor layer 305 and be arranged in the hole HL of the third light emitting portion LE3. Although the insulating film DL is not arranged on the outer side wall of the fourth through electrode VE4, the bonding portion AD including an insulating material may be arranged inside the hole HL of the third light emitting portion LE3 to be insulated from the third active layer 310, the third p-type semiconductor layer 312 and the third transparent electrode layer 314 of the third light emitting portion LE3. In addition, since the bonding portion AD is also filled between the first light emitting portion LE1 and the second light emitting portion LE2, the fourth through electrode VE4 electrically contacting the substrate 100 or the adhesive layer BDL may be insulated from each of the side surfaces of the first light emitting portion LE1 and the side surfaces of the second light emitting portion LE2.

[0152] Because in Figure 8a and 8b The structure and characteristics of the light-emitting element are not described in detail. Figure 1a and Figure 1b , Figure 3a , Figure 3b , Figure 4 , Figure 5a , Figure 5b , Figure 6 , Figure 7 The structure and characteristics of the light-emitting elements described in are the same, so their detailed description is omitted.

[0153] The following is a description of a method for manufacturing a light emitting element according to an embodiment of the present invention. Figure 1a and Figure 1d A method for manufacturing a light-emitting element described in.

[0154] Figures 9a to 26a is a cross-sectional view for illustrating a method for manufacturing a light emitting element according to an embodiment of the present invention, Figures 9b to 26b For the general Figures 9a to 26a A cross-sectional view of the light-emitting element taken along line AA'.

[0155] Reference Figure 9a and Figure 9b , a common n-type semiconductor layer COM_N may be grown on the first substrate 100 .

[0156] The substrate 100 may include a first area AR1 where the first light emitting portion LE1 is arranged and a second area AR2 where the second light emitting portion LE2 is arranged.

[0157] The common n-type semiconductor layer COM_N may be formed by growth methods such as metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), hydrolysis vapor phase epitaxy (HVPE), and metal-organic chloride (MOC).

[0158] Reference Fig.10a and Fig.10b , a first mask pattern MS1 ​​may be formed on the common n-type semiconductor layer COM_N in a manner of exposing the first region AR1 of the substrate 100, so that the first active layer 110 and the first p-type semiconductor layer 112 are sequentially grown on the first region AR1. As an example, the first mask pattern MS1 ​​may include SiO x or SiNx .

[0159] The first active layer 110 and the first p-type semiconductor layer 112 may be formed by a growth method such as MOCVD, MBE, HVPE or MOC.

[0160] The first mask pattern MS1 ​​may be removed after the first active layer 110 and the first p-type semiconductor layer 112 are formed.

[0161] Reference Fig.11a and Fig.11b , a second mask pattern MS2 may be formed on the common n-type semiconductor layer COM_N to expose the second region AR2 of the substrate 100, and the second active layer 210 and the second p-type semiconductor layer 212 may be sequentially grown on the second region AR2. As an example, the second mask MS2 may include SiO x or SiN x .

[0162] The second active layer 210 and the second p-type semiconductor layer 212 may be formed by a growth method such as MOCVD, MBE, HVPE or MOC.

[0163] The second mask pattern MS2 may be removed after forming the second active layer 210 and the second p-type semiconductor layer 212 .

[0164] Reference Fig.12a and Figure 12b A first transparent electrode layer 114 and a second transparent electrode layer 214 may be formed on the first p-type semiconductor layer 112 and the second p-type semiconductor layer 212 , respectively.

[0165] As an example, a transparent electrode material film may be formed on the first substrate 100 formed with the first p-type semiconductor layer 112 and the second p-type semiconductor layer 212 by using a common deposition process, such as chemical vapor deposition (CVD), physical vapor deposition (PVD), etc. A third mask pattern (not shown) may be formed on the transparent electrode material film, and the transparent electrode material film may be etched using the third mask as an etching mask, thereby forming the first transparent electrode layer 114 and the second transparent electrode layer 214, respectively. After the first transparent electrode layer 114 and the second transparent electrode layer 214 are formed, the third mask pattern may be removed.

[0166] Accordingly, a first semiconductor structure SC1 including a first active layer 110, a first p-type semiconductor layer 112 and a first transparent electrode layer 114 and a second semiconductor structure SC2 including a second active layer 210, a second p-type semiconductor layer 212 and a second transparent electrode layer 214 can be formed on the common n-type semiconductor layer COM_N.

[0167] Also, a first light emitting portion LE1 including a common n-type semiconductor layer COM_N and a first semiconductor structure SC1 and a second light emitting portion LE2 including a common n-type semiconductor layer COM_N and a second semiconductor structure SC2 may be formed on the first substrate 100 , respectively.

[0168] Reference Fig.13a and Fig.13b The third n-type semiconductor layer 305 , the third active layer 310 , and the third p-type semiconductor layer 312 may be formed on the second substrate 300 by a growth method such as MOCVD, MBE, HVPE, or MOC.

[0169] Reference Fig.14a and Fig.14b The hole HL exposing the third n-type semiconductor layer 305 may be formed by etching the third p-type semiconductor layer 312 and the third active layer 310. As an example, during the etching process, a portion of the third n-type semiconductor layer 305 may be etched.

[0170] Reference Fig.15a and Fig.15b , a first ohmic pattern OL1 may be formed inside the hole HL.

[0171] As an example, a first ohmic film (not shown) may be conformally formed on the third p-type semiconductor layer 312, the third active layer 310, and the third n-type semiconductor layer 305 in which the hole HL is formed. For example, the first ohmic film may include an Au / Be alloy. The first ohmic film may be etched in a manner of electrically contacting the third n-type semiconductor layer 305 in the hole HL to form a first ohmic pattern OL1. After the first ohmic pattern OL1 is formed, annealing at 400° C. or above may be performed.

[0172] According to an embodiment, the first ohmic pattern OL1 may be formed to be spaced apart from the third active layer 310 and the third p-type semiconductor layer 312 at the inner sidewall of the hole HL.

[0173] Reference Fig.16a and Fig.16b , a third ohmic pattern may be formed on the third p-type semiconductor layer 312 .

[0174] As an example, a second ohmic film (not shown) may be conformally formed on the third p-type semiconductor layer 312. For example, the second ohmic film may include an Au / Ge alloy. The second ohmic film may be etched to form a second ohmic pattern OL2 on the third p-type semiconductor layer 312. After the second ohmic pattern OL2 is formed, annealing at 400° C. or above may be performed.

[0175] Accordingly, the third light emitting portion LE3 including the third n-type semiconductor layer 305 , the third active layer 310 , the third p-type semiconductor layer 312 , the first ohmic pattern OL1 , and the second ohmic pattern OL2 may be formed.

[0176] Reference Fig.17a and Fig.17b , the first ohmic pattern OL1 and the second ohmic pattern OL2 may be arranged to face the first transparent electrode 114 and the second transparent electrode layer 214 of the first substrate 100 in such a manner that the second substrate 300 is turned over.

[0177] The bonding part AD may be coated on the first substrate 100, and after bonding the second substrate 300, a heat treatment may be performed to bond the first light emitting part LE1 and the second light emitting part LE2 on the first substrate 100, and the third light emitting part LE3 on the second substrate 300. The bonding part AD may include a transparent material having bonding properties, such as SOG, BCB, HSQ, or SU-8 photoresist.

[0178] Also, the second substrate 300 may be removed through a laser lift-off (LLO) process.

[0179] Reference Fig.18a and Fig.18b , a passivation film PVT may be formed on the third n-type semiconductor layer 305. The passivation film PVT may include a SiO x or SiN x And other insulation materials.

[0180] Reference Fig.19a and Fig.19b , after forming a fourth mask pattern (not shown) on the passivation film PVT, the fourth mask pattern is used as an etching mask to form a first through hole VA1 exposing the first transparent electrode layer 114, a second through hole VA2 exposing the second transparent electrode layer 214, a third through hole VA3 exposing the second ohmic pattern OL2, a fourth through hole VA4 exposing the first ohmic pattern OL1, and a fifth through hole VA5 exposing the common n-type semiconductor layer COM_N.

[0181] As an example, when the substrate 100 is a quadrilateral, each of the first through hole VA1, the second through hole VA2, the third through hole VA3 and the fourth through hole VA4 can be formed at a corner of the substrate 100, and the fifth through hole VA5 can be formed in the center of the substrate 100.

[0182] The fourth mask pattern MS4 may include a photoresist. After forming the first through-hole VA1, the second through-hole VA2, the third through-hole VA3, the fourth through-hole VA4, and the fifth through-hole VA5, the fourth mask pattern may be removed.

[0183] Reference Fig.20a and Fig.20b , an insulating film DL may be conformally formed on the first light emitting portion LE1, the second light emitting portion LE2, and the third light emitting portion LE3 formed with the first through hole VA1, the second through hole VA2, the third through hole VA3, the fourth through hole VA4, and the fifth through hole VA5 by using an atomic layer deposition (ALD) process or a plasma enhanced chemical vapor deposition (PECVD) process. The insulating film DL may include a substance having an etching selectivity ratio with respect to the passivation film PVT and an etchant. For example, in the case where the passivation film PVT includes SiOx, the insulating film DL may include a material selected from SiN x 、TiN x 、TiO x 、TaO x 、ZrO x 、Al x O y and HfO x At least one of the groups formed.

[0184] Next, the insulating film DL can be anisotropically etched without a mask, so that the insulating film DL formed on the upper portion of the passivation film PVT and the bottom surface of each of the first through hole VA1, the second through hole VA2, the third through hole VA3, the fourth through hole VA4 and the fifth through hole VA5 can be etched, and the insulating film DL remains on the inner side wall of each of the first through hole VA1, the second through hole VA2, the third through hole VA3, the fourth through hole VA4 and the fifth through hole VA5.

[0185] Reference Fig.21a and Figure 21bThe metal pattern is formed by using an anisotropic deposition process such as a sputtering process on the bottom surface of each of the first through hole VA1, the second through hole VA2, the third through hole VA3, the fourth through hole VA4, and the fifth through hole VA5 formed with the insulating film DL and the upper part of the passivation film PVT. Each of the metal patterns may include Cr / Al, Cr / Au, or Ti / Al alloy.

[0186] The metal pattern may include: a first metal pattern M1, formed on the bottom surface of the first through hole VA1; a second metal pattern M2, formed on the bottom surface of the second through hole VA2; a third metal pattern M3, formed on the bottom surface of the third through hole VA3; a fourth metal pattern M4, formed on the bottom surface of the fourth through hole VA4; a fifth metal pattern M5, formed on the bottom surface of the fifth through hole VA5; and a sixth metal pattern M6, formed on the passivation film PVT.

[0187] Reference Fig.22a and Figure 22b , a buffer film BL and a seed film SL may be conformally formed in sequence on the first light emitting portion LE1, the second light emitting portion LE2, and the third light emitting portion LE3 formed with the first metal pattern M1, the second metal pattern M2, the third metal pattern M3, the fourth metal pattern M4, the fifth metal pattern M5, and the sixth metal pattern M6. The buffer film BL may include a Ta alloy, a TiW alloy, or a TiNi alloy. The seed layer SL may include Cu. According to an embodiment, the buffer film BL and the seed layer SL may be conformally formed without filling each of the first through hole VA1, the second through hole VA2, the third through hole VA3, the fourth through hole VA4, and the fifth through hole VA5 formed with the first metal pattern M1, the second metal pattern M2, the third metal pattern M3, the fourth metal pattern M4, and the fifth metal pattern M5, respectively.

[0188] Reference Fig.23a and Figure 23b , a fifth mask pattern MS5 may be formed on the seed layer SL. The fifth mask pattern MS5 may include a photoresist. The fifth mask pattern MS5 may include openings exposing the first through hole VA1, the second through hole VA2, the third through hole VA3, the fourth through hole VA4, and the fifth through hole VA5 formed with the seed layer SD.

[0189] The openings may include: a first opening OP1 exposing the first through-hole VA1; a second opening OP2 exposing the second through-hole VA2; a third opening OP3 exposing the third through-hole VA3; and a fourth opening OP4 exposing the through-hole VA4 and the fifth through-hole VA5.

[0190] As an example, when each of the first through hole VA1, the second through hole VA2, the third through hole VA3 and the fourth through hole VA4 is formed at the corner of the substrate 100, and the fifth through hole VA5 is formed at the center of the substrate 100, the first opening OP1, the second opening OP2 and the third opening OP3 can be respectively formed at the corners of the substrate 100, and the fourth opening OP4 can have a structure extending from a corner to the center of the substrate 100.

[0191] Reference Fig.24a and Figure 24b The seed layer SL may be used to form an electrode layer that fills the first through hole VA1, the second through hole VA2, the third through hole VA3, the fourth through hole VA4, and the fifth through hole VA5, and fills the first opening OP1, the second opening OP2, the third opening OP3, and the fourth opening OP4 through a metal plating process.

[0192] The electrode layer may include: a first electrode layer EL1, filling the first through hole VA1 and the first opening OP1; a second electrode layer EL2, filling the second through hole VA2 and the second opening OP2; a third electrode layer EL3, filling the third through hole VA3 and the third opening OP3; a fourth electrode layer EL4, filling the fourth through hole VA4, the fifth through hole VA5 and the fourth opening OP4.

[0193] Optionally, since the electrode layers EL1, EL2, EL3, and EL4 are formed by a metal plating process, they can be formed to be higher than the fifth mask pattern MS5. Therefore, by using a polishing process such as a chemical mechanical polishing (CMP) process on the upper surfaces of the electrode layers EL1, EL2, EL3, and EL4, each of the electrode layers EL1, EL2, EL3, and EL4 can have an upper surface at the same level as the surface of the fifth mask pattern MS5.

[0194] Reference Fig.25a and Fig.25b , respective solder structures may be formed on each of the electrode layers EL1 , EL2 , EL3 , and EL4 .

[0195] Each of the solder structures may be formed on an area defined by the fifth mask MS5, i.e., each of the electrode layers EL1, EL2, EL3, and EL4. The solder structures may include: a first solder structure SS1 formed on the first electrode layer EL1; a second solder structure SS2 formed on the second electrode layer EL2; a third solder structure SS3 formed on the third electrode layer EL3; and a fourth solder structure SS4 formed on the fourth electrode layer EL4.

[0196] According to an embodiment, each of the solder structures SS1, SS2, SS3, and SS4 may be formed with a solder ball SD including In through a metal plating process. Also, a barrier film BRL including Ni, Ti, Cr, etc. may be formed before forming the solder ball SD.

[0197] Optionally, the steps of forming the solder structures SS1, SS2, SS3, and SS4 may be omitted.

[0198] Reference Fig.26a and Figure 26b After removing the fifth mask MS5, the seed layer SL and the sixth metal pattern M6 can be etched to form a first through electrode VE1, a first pad PD1, a second through electrode VE2, a second pad PD2, a third through electrode VE3, a third pad PD3, a fourth through electrode VE4, a fifth through electrode VE5 and a common pad CPD.

[0199] The first through-electrode VE1 may fill the first through-hole VA1 and include a barrier layer BL, a seed layer SL, and a first electrode layer EL1. The first pad PD1 may extend from the first through-electrode VE1 and fill the first opening OP1 and include a barrier layer BL, a seed layer SL, and a first electrode layer EL. The second through-electrode VE2 may fill the second through-hole VA2 and include a barrier layer BL, a seed layer DL, and a second electrode layer EL2. The second pad PD2 may extend from the second through-electrode VE2 and fill the second opening OP2 and include a barrier layer BL, a seed layer SL, and a second electrode layer EL2. The third through-electrode VE3 may fill the third through-hole VA3 and include a barrier layer BL, a seed layer DL, and a third electrode layer EL3. The third pad PD3 may extend from the third through-electrode VE3 and fill the third opening OP3 and include a barrier layer BL, a seed layer SL, and a third electrode layer EL3. The fourth through electrode VE4 can fill the fourth through hole VA4 and include a blocking layer BL, a seed layer DL and a fourth electrode layer EL4; the fifth through electrode VE5 can fill the fifth through hole VA5 and include a blocking layer BL, a seed layer SL and a fourth electrode layer EL4, and the common pad CPD can extend from the fourth through electrode VE4 and the fifth through electrode VE5 and fill the fourth opening OP4, and include a blocking layer BL, a seed layer SL and a fourth electrode layer EL4.

[0200] exist Figures 9a to 26a as well as Figures 9b to 26b In the process described in the above, the solder structure SS1, SS2, SS3, and SS4 can be formed without forming the solder structure SS1, SS2, SS3, and SS4. Figure 1b Differently, Figures 9a to 26a and Figures 9b to 26bIn the process described in the above, when solder structures SS1, SS2, SS3, and SS4 are formed, Figure 1d The light emitting element is shown.

[0201] In addition, the process of forming the first to fifth through electrodes VE1 to VE2 to VE3 to VE4 to VE5 and the first to third pads PD1 to PD2 to PD3 and the common pad CPD may be alternatively formed by the following process.

[0202] Fig. 27 and Fig.28 It is a cross-sectional view for explaining a method for manufacturing a light emitting element according to another embodiment of the present invention.

[0203] like Figures 9a to 24a as well as Figure 9b to Figure 24b As described, a first light-emitting portion LE1, a second light-emitting portion LE2, an adhesive portion AD, a third light-emitting portion LE3, a passivation film PVT, a blocking layer BL, a seed layer SL, a first electrode layer EL1 filling the first through hole VA1, a second electrode layer EL2 filling the second through hole VA2, a third electrode layer EL3 filling the third through hole VA3, a fourth electrode layer EL4 filling the fourth through hole VA4, and a fifth electrode layer EL5 filling the fifth through hole VA5 can be formed on the substrate 100.

[0204] Reference Fig. 27 The first electrode layer EL1, the second electrode layer EL2, the third electrode layer EL3, the fourth electrode layer EL4, the fifth electrode layer EL5, the fifth mask pattern MS5, the seed layer SL and the blocking layer BL can be etched or grinded in a manner to expose the upper surface of the passivation film PVT, thereby forming a first through electrode VE1, a second through electrode VE2, a third through electrode VE3, a fourth through electrode VE4 and a fifth electrode layer EL5, respectively.

[0205] In this case, the passivation film PVT may act as an etching (or grinding) stopper in the etching or grinding process of the first electrode layer EL1, the second electrode layer EL2, the third electrode layer EL3, the fourth electrode layer EL4, the fifth mask pattern MS5, the seed layer SL, and the blocking layer BL.

[0206] Reference Fig.28 A first pad PD1 electrically connected to the first through electrode VE1, a second pad PD2 electrically connected to the second through electrode VE2, a third pad PD3 electrically connected to the third through electrode VE3, and a common pad CPD electrically connected to the fourth through electrode VE4 and the fifth through electrode VE5 can be formed on the passivation film PVT respectively.

[0207] In use Fig. 27 and Fig.28 In the case of the process, it can be completed Figure 1c The light-emitting element shown.

[0208] Fig.29 and Fig.30 It is a cross-sectional view for explaining a method of mounting a light emitting element according to an embodiment of the present invention on a mounting substrate 100 .

[0209] Reference Fig.29 , you can pass Figures 9a to 26a as well as Figures 9b to 26b The formed plurality of light emitting elements LED are mounted on a target mounting substrate MB.

[0210] Adhesive pads BPD that are in electrical contact with the first pad PD1 , the second pad PD2 , the third pad PD3 , and the common pad CPD, respectively, may be formed on the mounting substrate MB. The adhesive pads BPD may be formed corresponding to positions where the light emitting elements LED are mounted.

[0211] As an example, solder structures SS1 , SS2 , SS3 , and SS4 may be formed on each of the first pad PD1 , the second pad PD2 , the third pad PD3 , and the common pad CPD. As another example, solder structures may be formed on bonding pads BPD of the mounting substrate 100 .

[0212] The first substrate 100 on which the plurality of light emitting elements LED are formed may be turned over so that the light emitting elements LED face the mounting substrate MB on which the bonding pads BPD are formed.

[0213] A mask pattern MSK exposing the light emitting element desired to be separated from the first substrate 100 may be formed on the turned-over first substrate 100 .

[0214] Reference Fig.30 , the mask pattern MSK can be used to perform a selective laser lift-off (selective LLO) process on the first substrate 100 to separate the light-emitting element LED arranged at the target mounting position of the mounting substrate MB from the first substrate 100. The distance between the separated light-emitting elements LED can be different according to the mounting substrate MB, and the selective laser lift-off (selective LLO) process can be performed in a state of being bonded to the mounting substrate to prevent the light-emitting element LED from detaching, so that it can be mounted to the desired position more stably. In addition, when performing the selective laser lift-off (selective LLO) process, it is not necessary to separately equip a mask pattern for specifying the laser incident position.

[0215] Each of the first pad PD1, the second pad PD2, the third pad PD3 and the common pad CPD of each separated light emitting element LED can be bonded to each other on the bonding pad BPD through the solder structures SS1, SS2, SS3 and SS4, respectively. Accordingly, the light emitting element LED can be mounted on the mounting substrate MB.

[0216] If all the light emitting elements LED are mounted at target positions, the first substrate 100 can be separated from the light emitting elements LED without performing a separate process of removing the first substrate 100 .

[0217] Although the embodiments of the present invention are described above with reference to the accompanying drawings, it is understood by those with ordinary knowledge in the technical field to which the present invention belongs that the present invention can be implemented in other specific forms without changing its technical ideas or essential features. Therefore, it should be understood that the embodiments described above are illustrative in all aspects and are not restrictive.

Claims

1. A light emitting element, characterized in that: include: The first light emitting portion has a first area; The second light emitting portion has a second area; A third light emitting portion having a third area; as well as a bonding portion, arranged between the first light emitting portion, the second light emitting portion and the third light emitting portion, The first light emitting portion and the second light emitting portion are located in the same plane, The third light emitting portion is arranged across the first light emitting portion and the second light emitting portion, the third area is larger than each of the first area and the second area, The third light emitting portion is arranged apart from the first light emitting portion and the second light emitting portion, The third light emitting portion includes a 1-3 conductive type semiconductor layer and a hole exposing the 1-3 conductive type semiconductor layer, and the hole faces the space between the first light emitting portion and the second light emitting portion. The bonding portion extends into the hole to contact the 1-3 conductive type semiconductor layer, and extends between the first light emitting portion and the second light emitting portion to cover the side surfaces of the first light emitting portion and the second light emitting portion. The bonding portion is made of insulating material.

2. The light emitting element according to claim 1, wherein The first light emitting portion includes a 1-1 conductive type semiconductor layer and a first semiconductor structure including a first active layer and a 2-1 conductive type semiconductor layer disposed on the 1-1 conductive type semiconductor layer. The second light emitting portion includes the 1-1 conductive type semiconductor layer and a second semiconductor structure disposed on the 1-1 conductive type semiconductor layer in a manner spaced apart from the first semiconductor structure and including a second active layer and a 2-2 conductive type semiconductor layer. The third light emitting portion further includes a third active layer and a 2-3 conductive type semiconductor layer.

3. The light emitting element according to claim 2, wherein: Also includes: a first pad electrically connected to the 2-1 conductive type semiconductor layer; a second pad electrically connected to the 2-2 conductive type semiconductor layer; a third pad, electrically connected to the 2-3 conductive type semiconductor layer; as well as The common pad electrically connects the 1-1 conductive type semiconductor layer and the 1-3 conductive type semiconductor layer.

4. The light emitting element according to claim 3, wherein: include: a first through electrode, electrically connecting the 2-1 conductive type semiconductor layer and the first pad; a second through electrode, electrically connecting the 2-2 conductive type semiconductor layer and the second pad; a third through electrode electrically connecting the 2-3 conductive type semiconductor layer and the third pad; a fourth through electrode electrically connecting the 1-1 conductive type semiconductor layer exposed between the first semiconductor structure and the second semiconductor structure and the common pad; and A fifth through electrode electrically connects the 1st to 3rd conductive type semiconductor layer and the common pad.

5. The light emitting element according to claim 3, wherein: include: a first through electrode, electrically connecting the 2-1 conductive type semiconductor layer and the first pad; a second through electrode, electrically connecting the 2-2 conductive type semiconductor layer and the second pad; a third through electrode electrically connecting the 2-3 conductive type semiconductor layer and the third pad; as well as a fourth through electrode electrically connecting the 1-1 conductive type semiconductor layer and the 1-3 conductive type semiconductor layer to the common pad, The fourth through electrode penetrates the 1-3 conductive type semiconductor layer and is electrically connected to the 1-1 conductive type semiconductor layer exposed between the first semiconductor structure and the second semiconductor structure.

6. The light emitting element according to claim 5, wherein: The bonding part fills the first light emitting part and the space between the second light emitting part and the third light emitting part and between the first semiconductor structure and the second semiconductor structure, and bonds the first light emitting part, the second light emitting part and the third light emitting part.

7. The light emitting element according to claim 6, wherein: Also includes: an insulating film surrounding outer side walls of the first through electrode to the fourth through electrode, The fourth through electrode penetrates the third light emitting portion and the bonding portion, one side of the fourth through electrode contacts the 1-1 conductive type semiconductor layer exposed between the first semiconductor structure and the second semiconductor structure, and the other side of the fourth through electrode contacts the common pad, The common pad is in electrical contact with the 1st to 3rd conductivity type semiconductor layer.

8. The light emitting element according to claim 6, wherein: The hole has a width smaller than a width of the 1-1 conductive type semiconductor layer exposed between the first semiconductor structure and the second semiconductor structure at a position corresponding to the 1-1 conductive type semiconductor layer exposed between the first semiconductor structure and the second semiconductor structure.

9. The light emitting element according to claim 8, wherein: The hole is arranged between the 1-3 conductive type semiconductor layer and the 1-1 conductive type semiconductor layer, and the bonding portion fills the inside of the hole. The fourth through electrode penetrates the 1-3 conductive type semiconductor layer and the bonding portion, one side of the fourth through electrode contacts the common pad, the other side facing the one side contacts the 1-1 conductive type semiconductor layer, and the side wall of the fourth through electrode contacts the 1-3 conductive type semiconductor layer.

10. The light emitting element according to claim 8, wherein The hole faces the 1-1 conductive type semiconductor layer exposed between the first semiconductor structure and the second semiconductor structure. The bonding portion extends between the first semiconductor structure and the second semiconductor structure and contacts the 1-1 conductive type semiconductor layer.

11. The light emitting element according to claim 10, wherein: The fourth through electrode is in contact with at least a portion of the 1-3 conductive type semiconductor layer and the bonding portion.

12. The light emitting element according to claim 11, wherein The fourth through electrode penetrates the 1-3 conductive type semiconductor layer such that a side wall of the fourth through electrode is in contact with the 1-3 conductive type semiconductor layer.

13. The light emitting element according to claim 1, wherein Also includes: a substrate, wherein the first light emitting portion and the second light emitting portion are arranged to be spaced apart from each other; as well as The adhesive layer bonds the substrate to the first light-emitting portion and the second light-emitting portion, and includes a conductive material.

14. The light emitting element according to claim 13, wherein: The first light emitting portion includes a 1-1 conductive type semiconductor layer, a first active layer and a 2-1 conductive type semiconductor layer. The second light emitting portion includes a 1-2 conductive type semiconductor layer, a second active layer and a 2-2 conductive type semiconductor layer. The third light emitting portion includes a 1st-3rd conductivity type semiconductor layer, a third active layer and a 2nd-3rd conductivity type semiconductor layer.

15. The light emitting element according to claim 14, wherein The adhesive layer electrically connects the 1-1 conductive type semiconductor layer and the 1-2 conductive type semiconductor layer.

16. The light emitting element according to claim 15, wherein: Also includes: a first pad electrically connected to the 2-1 conductive type semiconductor layer; a second pad electrically connected to the 2-2 conductive type semiconductor layer; a third pad, electrically connected to the 2-3 conductive type semiconductor layer; as well as The common pad is electrically connected to the adhesive layer.

17. The light emitting element according to claim 14, wherein: The adhesive layer comprises: a first adhesive layer disposed between the 1-1 conductive type semiconductor layer and the substrate; and A second adhesive layer is arranged between the 1-2 conductive type semiconductor layer and the substrate, Each of the first adhesive layer and the second adhesive layer is electrically connected to the substrate.

18. The light emitting element according to claim 17, wherein: Also includes: a first pad electrically connected to the 2-1 conductive type semiconductor layer; a second pad electrically connected to the 2-2 conductive type semiconductor layer; a third pad, electrically connected to the 2-3 conductive type semiconductor layer; as well as The common pad is electrically connected to the substrate.

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