A power chip press-packaging structure and its manufacturing method

Abstract

The present invention discloses a power chip press-fit packaging structure and a manufacturing method thereof. The power chip press-fit packaging structure includes a bottom plate, on which a plurality of IGBT chips and a plurality of copper-clad ceramic plates are arranged; metal columns are arranged on each of the IGBT chips and each of the copper-clad ceramic plates, and the top surfaces of the metal columns are located on the same horizontal plane; a flexible metal plate, the bottom surface of the flexible metal plate covers and contacts the top surfaces of the metal columns; a plurality of auxiliary emitter lead terminals are arranged on the top surface of the flexible metal plate, and the auxiliary emitter lead terminals are electrically contacted with the flexible metal plate; a multi-layer PCB board is located above the flexible metal plate, and the multi-layer PCB board is electrically contacted with the plurality of auxiliary emitter lead terminals; the multi-layer PCB board has through holes penetrating through the multi-layer PCB board; an emitter electrode is located above the multi-layer PCB board, and the emitter electrode has a plurality of press-fit arms, and the plurality of press-fit arms pass through the through holes of the multi-layer PCB board and are press-fitted with the flexible metal plate.

Description

Technical Field

[0001] The present invention relates to the field of power device packaging, and particularly to a power chip press-packaging structure and a manufacturing method thereof. Background Art

[0002] At present, the vast majority of high-power power electronic devices in the power system adopt silicon power electronic devices, such as IGBT (Insulated Gate Bipolar Transistor) chip devices, thyristor chip devices, GTO (Gate Turn-Off thyristor) chip devices, etc., to achieve the control and conversion of electrical energy. Due to the limitations of the physical properties of the silicon power electronic devices themselves in terms of voltage withstand, operating temperature, etc., in order to fundamentally improve the reliability and stability of high-power power electronic equipment, reduce the overall loss of the system, and improve the control and conversion efficiency of energy, it is necessary to research and develop new power electronic devices with higher voltage withstand, lower power consumption, and high temperature resistance. Silicon Carbide (SiC) devices are one of the third-generation semiconductor power electronic devices with the most mature technology and the widest application so far. They can break through the physical limits of traditional silicon-based devices and have the advantages of high voltage level, large current-carrying capacity, small loss, and fast heat dissipation. They can be widely used in new power electronic equipment such as solid-state transformers and solid-state circuit breakers, as well as traditional FACTS and DC transmission equipment, which will have an important impact on aspects such as the economic and safe operation of the power system and realize the innovation of power grid technology.

[0003] However, at present, most of the packaging structures for high-voltage power chips such as IGBT chips still use the welding packaging type of silicon-based chips, and their packaging parameters are obviously not suitable for the requirements of high turn-off speed and low loss of high-voltage power chips such as SiC-based IGBT chips. Therefore, it is necessary to develop a new packaging structure for high-voltage power chips. Summary of the Invention

[0004] In view of the above problems, the present invention provides a power chip press-packaging structure and a manufacturing method thereof to meet the requirements of high turn-off speed and low loss of high-voltage power chips such as IGBT chips.

[0005] The present invention provides a power chip press-fit packaging structure, which includes a bottom plate; a plurality of IGBT chips and a plurality of copper-clad ceramic plates are arranged on the bottom plate; each IGBT chip is electrically connected to a copper-clad ceramic plate; metal columns are arranged on each IGBT chip and each copper-clad ceramic plate, and the top surfaces of the metal columns are located on the same horizontal plane; a flexible metal plate, the bottom surface of the flexible metal plate covers and contacts the top surfaces of the metal columns; a multi-layer PCB board, the multi-layer PCB board is located above the flexible metal plate, and the multi-layer PCB board has a plurality of through holes penetrating through the multi-layer PCB board; an emitter electrode, the emitter electrode is located above the multi-layer PCB board, the emitter electrode has a plurality of press-fit arms, and the plurality of press-fit arms pass through the through holes of the multi-layer PCB board and are press-fitted with the flexible metal plate.

[0006] Optionally, the power chip press-fit packaging structure further includes: a case, the case is located on the bottom plate, the case surrounds the plurality of IGBT chips, the plurality of copper-clad ceramic plates, the metal columns and the flexible metal plate, and one side wall surface of the case has an opening; the emitter electrode is joined to the case, and the case, the emitter electrode and the bottom plate jointly achieve a fully enclosed packaging for the plurality of IGBT chips and the plurality of copper-clad ceramic plates; one end of the multi-layer PCB board extends out of the case from the opening of the case.

[0007] Optionally, the press-fit arm is a hollow structure, and an elastic structure is filled in the press-fit arm.

[0008] Optionally, the elastic structure includes a plurality of sub-elastic structures, each sub-elastic structure includes a base portion and arm portions extending in a cross-radial manner, adjacent arm portions of adjacent sub-elastic structures are connected, and the plurality of sub-elastic structures form an elastic structure through the connection of the arm portions.

[0009] Optionally, the arrangement of the plurality of IGBT chips and the plurality of copper-clad ceramic plates forms at least one arrangement unit arranged in the following manner: the plurality of IGBT chips are divided into two groups and arranged symmetrically, a copper-clad ceramic plate is arranged on the side of each group of IGBT chips, a central copper-clad ceramic plate is arranged between the two groups of IGBT chips, and the gates of each IGBT chip are electrically connected to the central copper-clad ceramic plate.

[0010] Optionally, the central copper-clad ceramic plate includes connecting portions on both sides and a heat dissipation support portion located between the connecting portions on both sides, metal columns are arranged on the heat dissipation support portion, gate lead terminals are respectively arranged on the connecting portions, the gate lead terminals penetrate through the through holes of the flexible metal plate and the multi-layer PCB board, and are in electrical contact with the multi-layer PCB board on the top surface of the multi-layer PCB board.

[0011] Optionally, a plurality of auxiliary emitter lead terminals are provided on the top surface of the flexible metal plate, and each auxiliary emitter lead terminal is in electrical contact with the flexible metal plate; the multi-layer PCB is in electrical contact with each auxiliary emitter lead terminal; the plurality of auxiliary emitter lead terminals are respectively located at positions corresponding to the IGBT chips on the top surface of the flexible metal plate, the auxiliary emitter lead terminals are electrically connected to the flexible metal plate and are also electrically connected to the multi-layer PCB; the auxiliary emitter lead terminals and the gate lead terminals are respectively connected to different circuits in the multi-layer PCB.

[0012] Optionally, the plurality of auxiliary emitter lead terminals include a top connection portion, a bottom connection portion, and a vertical portion connecting the top connection portion and the bottom connection portion. The bottom connection portion contacts the top surface of the flexible metal plate, the top connection portion is in electrical contact with the multi-layer PCB on the top surface of the multi-layer PCB, and the vertical portion is partially located on the side of the multi-layer PCB.

[0013] Optionally, the number of the central copper-clad ceramic plates is multiple, and each IGBT chip is electrically connected to the nearest central copper-clad ceramic plate; the metal posts on the central copper-clad ceramic plate are provided with first positioning holes extending from the top surface of the metal post to the bottom surface of the metal post; the power chip press-fit packaging structure further includes: a plurality of gate lead spring probes, each gate lead spring probe is respectively disposed in each first positioning hole and is electrically connected to the metal post; a groove penetrating the flexible circuit board is provided on the side of the flexible circuit board, and the plurality of gate lead spring probes respectively penetrate the flexible circuit board through the groove; the multi-layer PCB presses each gate lead spring probe.

[0014] Optionally, the metal posts on the IGBT chips are provided with second positioning holes extending from the top surface of the metal post to the bottom surface of the metal post; the power chip press-fit packaging structure further includes: a plurality of auxiliary emitter lead spring probes, each auxiliary emitter lead spring probe is respectively disposed in each second positioning hole and is electrically connected to the metal post; the plurality of auxiliary emitter lead spring probes respectively penetrate the flexible circuit board through through holes; the multi-layer PCB presses each auxiliary emitter lead spring probe; the auxiliary emitter lead spring probes and the gate lead spring probes are connected to different circuits in the multi-layer PCB.

[0015] Optionally, the arrangement unit further includes: a plurality of fast recovery diodes, each fast recovery diode is symmetrically disposed on the side of two groups of IGBT chips and is in the same row or the same column as the copper-clad ceramic plate on the side; a metal post is provided on the top surface of each fast recovery diode, and a third positioning hole is provided on the top surface of the metal post on the top surface of each fast recovery diode; the flexible circuit board is fixed by screws passing through the third positioning holes.

[0016] The present invention also discloses a manufacturing method for a power chip press-fit packaging structure, comprising the following steps: providing a bottom plate; soldering a plurality of IGBT chips and a plurality of copper-clad ceramic plates on the bottom plate; forming metal columns on each of the IGBT chips and each of the copper-clad ceramic plates, with the top surfaces of the metal columns located on the same horizontal plane; arranging a flexible metal plate, the bottom surface of the flexible metal plate covering and contacting the top surfaces of the metal columns; arranging a plurality of auxiliary emitter lead terminals on the top surface of the flexible metal plate; arranging a multi-layer PCB board above the flexible metal plate, the multi-layer PCB board being in electrical contact with the plurality of auxiliary emitter lead terminals; the multi-layer PCB board being provided with through holes penetrating through the multi-layer PCB board; arranging an emitter electrode above the multi-layer PCB board, the emitter electrode having a plurality of press-fit arms, and the plurality of press-fit arms passing through the through holes of the multi-layer PCB board to be press-fitted with the flexible metal plate.

[0017] Optionally, the press-fit arm is a hollow structure, and an elastic structure is filled in the press-fit arm; the elastic structure includes a plurality of sub-elastic structures, each sub-elastic structure including a base portion and arm portions extending in a cross-radial manner, adjacent arm portions of adjacent sub-elastic structures being connected, and the plurality of sub-elastic structures forming the elastic structure through the connection of the arm portions; the elastic structure is formed by 3D printing.

[0018] The beneficial effects of the present invention are as follows:

[0019] 1. For the power chip press-fit packaging structure of the present invention, through the arrangement of the bottom plate, copper-clad ceramic plates, metal columns, flexible metal plate, multi-layer PCB board and emitter electrode, the press-fit packaging of a plurality of IGBT chips is realized. The molybdenum copper alloy, chip and bottom plate can be sintered by using the double-sided sintering technology, reducing the chip contact resistance, thermal resistance and loss; the heat dissipation requirements under the high turn-off speed of the high-voltage power chip can be met. The flexible metal plate is used to electrically connect the IGBT chips through the metal columns to achieve zero pressure on the chip surface, preventing mechanical damage to the chip surface; the power loop is directly led out through the metal columns by using the sintering process, eliminating the parasitic parameters generated by the traditional bonding wires; the area of the power loop in the press-fit direct connection packaging method is much smaller than that of the welding packaging type, so the parasitic parameters are also smaller; the parasitic parameters generated by the relatively large metal columns themselves are smaller than those of the thin bonding wires; therefore, the parasitic parameters in the power chip press-fit packaging structure of the present invention are smaller, and thus the loss under the high turn-off speed of the high-voltage power chip is lower.

[0020] 2. The press-fit packaging structure of the power chip of the present invention has a hollow structure for the press-fit arm, and an elastic structure is filled inside the press-fit arm. Further, the elastic structure includes a plurality of sub-elastic structures, each sub-elastic structure includes a base portion and arm portions extending in a cross-radial manner, adjacent arm portions of adjacent sub-elastic structures are connected, and the plurality of sub-elastic structures form an elastic structure through the connection of the arm portions. On the one hand, it can increase the heat dissipation capacity of the packaging structure; on the other hand, it enables the press-fit arm to have a certain elasticity, preventing the flexible metal plate from suffering fatigue failure, reducing the surface stress of the chip, and even realizing zero-pressure press-fit packaging of the chip.

[0021] 3. In the press-fit packaging structure of the power chip of the present invention, the arrangement of the IGBT chips and the copper-clad ceramic plates enables the gates of multiple IGBT chips to be connected to the same central copper-clad ceramic plate, which is beneficial to the setting of gate leads, facilitating the simplification and heat dissipation of the packaging structure.

[0022] 4. In the press-fit packaging structure of the power chip of the present invention, the multiple auxiliary emitter lead terminals include a top connection portion, a bottom connection portion, and a vertical portion connecting the top connection portion and the bottom connection portion. The bottom connection portion contacts the top surface of the flexible metal plate, the top connection portion is in electrical contact with the multi-layer PCB board on the top surface of the multi-layer PCB board, and the vertical portion is partially located on the side of the multi-layer PCB board. Such an arrangement enables the auxiliary emitter lead terminals to bypass the multi-layer PCB board from the side and be electrically connected to the multi-layer PCB board from the top surface of the multi-layer PCB board, while providing a certain elastic space between the multi-layer PCB board and the flexible metal plate, reducing the pressure of the multi-layer PCB board on the flexible metal plate and reducing the fatigue of the flexible metal plate.

[0023] 5. In the press-fit packaging structure of the power chip of the present invention, the extraction of the auxiliary emitter is realized by combining the auxiliary emitter lead terminals with the multi-layer PCB board. The auxiliary emitter lead terminals and the gate lead terminals are connected to different circuits in the multi-layer PCB board to separate the power circuit and the drive circuit, effectively reducing the influence of the parasitic parameters of the power circuit and the drive circuit and reducing the voltage overshoot phenomenon during dynamic parameter testing; thereby reducing the parasitic parameters of the drive circuit and reducing the loss of the high-voltage power chip at high turn-off speeds.

[0024] 6. In the press-fit packaging structure of the power chip of the present invention, by respectively connecting the gate lead spring probes electrically connected to the central copper-clad ceramic substrate and the auxiliary emitter lead spring probes electrically connected to the IGBT chips to different circuits of the multi-layer PCB board, the separation of the power circuit and the drive circuit can be realized, effectively reducing the influence of the parasitic parameters of the power circuit and the drive circuit and reducing the voltage overshoot phenomenon during dynamic parameter testing; thereby reducing the parasitic parameters of the drive circuit and reducing the loss of the high-voltage power chip at high turn-off speeds.

[0025] 7. The manufacturing method of the power chip press-fit packaging structure of the present invention can be used to manufacture the power chip press-fit packaging structure of the present invention. Through the settings of the bottom plate, copper-clad ceramic plate, metal column, flexible metal plate, multi-layer PCB board, and emitter electrode, the press-fit packaging of multiple IGBT chips is realized. The molybdenum-copper alloy, chip, and bottom plate can be sintered using the double-sided sintering technology, reducing the chip contact resistance, thermal resistance, and loss; it can meet the heat dissipation requirements of high-voltage power chips at high turn-off speeds. The flexible metal plate is used to electrically connect the IGBT chips through the metal column, achieving zero pressure on the chip surface and preventing mechanical damage to the chip surface. The power loop is directly led out through the metal column using the sintering process, eliminating the parasitic parameters generated by traditional bonding wires; the area of the power loop in the press-fit direct connection packaging method is much smaller than that of the welding packaging type, so the parasitic parameters are also smaller; the parasitic parameters generated by the relatively large metal column itself are smaller than those of the fine bonding wire; therefore, the parasitic parameters in the power chip press-fit packaging structure of the present invention are small, and thus the loss of high-voltage power chips at high turn-off speeds is low.

[0026] 8. In the manufacturing method of the power chip press-fit packaging structure of the present invention, the special structure of the elastic structure is formed by 3D printing, which is simple to manufacture and can ensure good heat dissipation and elastic effects at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required for use in the description of the specific embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.

[0028] Figures 1 - 7 It is a state diagram of each step in an embodiment of the manufacturing method of the power chip press-fit packaging structure of the present invention;

[0029] Figure 8 It is along Figure 7 The sectional view along the AA section line in;

[0030] Figure 9 It is Figure 8 The exploded view of;

[0031] Figure 10 It is a schematic diagram of the elastic structure in an embodiment of the power chip press-fit packaging structure of the present invention;

[0032] Figures 11 - 18 It is a state diagram of each step in the manufacturing process of another embodiment of the power chip press-fit packaging structure of the present invention;

[0033] Figure 19For Figure 18 A sectional view along the B-B section line in

[0034] Figure 20 Another structural view showing the B-B section from another angle. Detailed implementation manner

[0035] The present invention provides a power chip press-fit packaging structure and a manufacturing method thereof. The power chip press-fit packaging structure includes a bottom plate; a plurality of IGBT chips and a plurality of copper-clad ceramic plates are arranged on the bottom plate; each IGBT chip is electrically connected to a copper-clad ceramic plate; metal posts are arranged on each of the IGBT chips and each of the copper-clad ceramic plates, and the top surfaces of the metal posts are located on the same horizontal plane; a flexible metal plate, the bottom surface of the flexible metal plate covers and contacts the top surfaces of the metal posts; a multi-layer PCB board, the multi-layer PCB board is located above the flexible metal plate, and the multi-layer PCB board has through holes penetrating through the multi-layer PCB board; an emitter electrode, the emitter electrode is located above the multi-layer PCB board, the emitter electrode has a plurality of press-fit arms, and the plurality of press-fit arms pass through the through holes of the multi-layer PCB board and are press-fitted with the flexible metal plate. To achieve the press-fit packaging of high-voltage power chips, such as IGBT chips, to meet the thermal loss requirements of high-voltage power chips at high turn-off speeds and reduce power loss.

[0036] Next, the technical solutions of the present invention will be clearly and completely described in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0037] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0038] In addition, the technical features involved in different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0039] Embodiment 1

[0040] Refer to Figures 1 - 10 , this embodiment provides a power chip press-fit packaging structure, including:

[0041] Bottom plate 11; a plurality of IGBT chips 13 and a plurality of copper-clad ceramic plates 12 are arranged on the bottom plate 11; each IGBT chip 13 is electrically connected to the copper-clad ceramic plate 12; metal posts 14 are arranged on each IGBT chip 13 and each copper-clad ceramic plate 12, and the top surfaces of the metal posts 14 are located on the same horizontal plane. The material of the metal posts 14 can be molybdenum copper alloy or other thermally conductive and electrically conductive metals with a coefficient of thermal expansion close to that of the IGBT chip 13.

[0042] Flexible metal plate 16, the bottom surface of the flexible metal plate 16 covers and contacts the top surfaces of the metal posts 14.

[0043] Multilayer PCB board 18, the multilayer PCB board 18 is located above the flexible metal plate 16, and the multilayer PCB board 18 has a plurality of through holes penetrating the multilayer PCB board.

[0044] Emitter electrode 19, the emitter electrode 19 is located above the multilayer PCB board 18, and the emitter electrode 19 has a plurality of crimping arms 191, and the plurality of crimping arms 191 pass through the through holes of the multilayer PCB board 18 and are crimped to the flexible metal plate 16.

[0045] In the power chip crimping and packaging structure of this embodiment, through the settings of the bottom plate 11, copper-clad ceramic plate 12, metal posts 14, flexible metal plate 16, multilayer PCB board 18 and emitter electrode 19, the crimping and packaging of multiple IGBT chips 13 are realized. The metal posts 14, IGBT chips 13 and bottom plate 11 can be sintered by using the double-sided sintering technology, reducing the contact resistance and thermal resistance of the IGBT chips 13 to reduce losses, so as to meet the heat dissipation requirements of high-voltage power chips, especially IGBT chips at high turn-off speeds. The flexible metal plate 16 is used to electrically connect the IGBT chips 13 through the metal posts 14 to achieve zero pressure on the surface of the IGBT chips 13, which can prevent mechanical damage to the surface of the IGBT chips 13; the power loop is directly led out through the metal posts 14 by using the sintering process, eliminating the parasitic parameters generated by the traditional bonding wires; the area of the power loop in the crimping and direct connection packaging method is much smaller than that of the welding packaging type, so the parasitic parameters are also smaller; the parasitic parameters generated by the relatively large metal posts 14 themselves are smaller than those of the fine bonding wires; therefore, the parasitic parameters in the power chip crimping and packaging structure of this embodiment are smaller, and thus the losses of the high-voltage power chips at high turn-off speeds are lower.

[0046] In this embodiment, the power chip crimping and packaging structure further includes:

[0047] Housing 17, the housing 17 is located on the bottom plate 11, the housing 17 surrounds the plurality of IGBT chips 13, the plurality of copper-clad ceramic plates 12, the metal posts 14 and the flexible metal plate 16, and one side wall surface of the housing 17 has an opening.

[0048] The emitter electrode 19 is joined to the case 17, and the case 17, the emitter electrode 19, and the base plate 11 together achieve a fully enclosed package for the multiple IGBT chips 13 and the multiple copper-clad ceramic plates 12.

[0049] One end of the multi-layer PCB board 18 extends out of the case 17 from the opening of the case 17.

[0050] The power chip press-packaging structure of this embodiment completes the fully enclosed package of the IGBT chips 13 through the settings of the case 17, the base plate 11, and the emitter electrode 19 to form a power device.

[0051] Furthermore, in the power chip press-packaging structure of this embodiment, the press-arm 191 is a hollow structure, and the press-arm 191 is filled with an elastic structure. The elastic structure enables the press-arm to have a certain elasticity, preventing the flexible metal plate from fatigue failure, and also reducing the surface stress of the chip.

[0052] Reference Figures 8 - 10 , specifically, the elastic structure can be in the form of the elastic structure 1911 shown in Figure 10 , including multiple sub-elastic structures. Each sub-elastic structure includes a base and arm portions extending in a cross-radial manner. The adjacent arm portions of adjacent sub-elastic structures are connected, and the multiple sub-elastic structures form an elastic structure through the connection of the arm portions. The elastic structure arranged in this way fills the press-arm 191. On the one hand, it enables the press-arm 191 to have a certain elasticity, preventing the flexible metal plate 16 from fatigue failure, reducing the surface stress of the IGBT chip 13, and even achieving zero-pressure press-packaging of the IGBT chip 13; on the other hand, it can also increase the heat dissipation capacity of the packaging structure.

[0053] Reference Figures 1 - 2 , in this embodiment, the arrangement of the multiple IGBT chips 13 and the multiple copper-clad ceramic plates 12 forms at least one arrangement unit arranged in the following manner:

[0054] The multiple IGBT chips 13 are divided into two groups and arranged symmetrically. A copper-clad ceramic plate 12 is provided on the side of each group of IGBT chips 13, and a central copper-clad ceramic plate 121 is provided between the two groups of IGBT chips 13. The gates of the respective IGBT chips 13 are electrically connected to the central copper-clad ceramic plate 121. The arrangement of the IGBT chips 13 and the copper-clad ceramic plates 12 enables the gates of the multiple IGBT chips 13 to be connected to the same central copper-clad ceramic plate 121, which is beneficial to the setting of gate lead-out, simplifies the packaging structure, and facilitates heat dissipation.

[0055] The lead-out of the gate can refer to Figures 2 - 6 , and Figure 8 , Figure 9, the central copper-clad ceramic plate 121 includes connecting portions 1211 on both sides and a heat dissipation and support portion 1212 located between the connecting portions 1211 on both sides. Metal columns are provided on the heat dissipation and support portion 1212. Gate lead terminals 15 are respectively provided on the connecting portions 1211. The gate lead terminals 15 penetrate through the through holes of the flexible metal plate 16 and the multi-layer PCB board 18 and are in electrical contact with the top surface of the multi-layer PCB board 18.

[0056] Reference Figures 5 - 6 , a plurality of auxiliary emitter lead terminals 161 are provided on the top surface of the flexible metal plate 6. The auxiliary emitter lead terminals 161 are in electrical contact with the flexible metal plate 6; the multi-layer PCB board 18 is in electrical contact with the plurality of auxiliary emitter lead terminals 161.

[0057] Specifically, the plurality of auxiliary emitter lead terminals 161 are respectively located at positions corresponding to the IGBT chips 13 on the top surface of the flexible metal plate 16. The auxiliary emitter lead terminals 161 are electrically connected to the flexible metal plate 16 and are also electrically connected to the multi-layer PCB board 18. It should be particularly noted that the auxiliary emitter lead terminals 161 and the gate lead terminals 15 are respectively connected to different circuits in the multi-layer PCB board 18.

[0058] In the power chip press-packaging structure of this embodiment, the extraction of the auxiliary emitter is realized by combining the auxiliary emitter lead terminals 161 with the multi-layer PCB board 18. By connecting the auxiliary emitter lead terminals 161 and the gate lead terminals 15 to different circuits in the multi-layer PCB board 18, the separation of the power loop and the drive loop is achieved, which can effectively reduce the parasitic parameters of the power loop and the influence of the drive loop, reduce the voltage overshoot phenomenon during dynamic parameter testing, thereby reducing the parasitic parameters of the drive loop and reducing the loss of the high-voltage power chip at high turn-off speeds.

[0059] Specifically, refer to Figure 5 , Figure 6 , Figure 8 and Figure 9 , the plurality of auxiliary emitter lead terminals 161 include a top connection portion 1611 and a bottom connection portion 1613, and a vertical portion 1612 connecting the top connection portion 1611 and the bottom connection portion 1613. The bottom connection portion 1613 contacts the top surface of the flexible metal plate 16. The top connection portion 1611 is in electrical contact with the top surface of the multi-layer PCB board 18. The vertical portion 1612 is partially located on the side of the multi-layer PCB board 18. Such an arrangement enables the auxiliary emitter lead terminals 161 to bypass the multi-layer PCB board 18 from the side and be electrically connected to the multi-layer PCB board 18 from the top surface of the multi-layer PCB board 18. At the same time, a certain elastic space is provided between the multi-layer PCB board 18 and the flexible metal plate 16, which can reduce the pressure of the multi-layer PCB board 18 on the flexible metal plate 16 and reduce the fatigue of the flexible metal plate 16.

[0060] In addition, screw holes are provided at the tops of the metal posts 14 at the corresponding positions of the IGBT chips 13. Openings are provided in the flexible metal plate 16 at the positions corresponding to the screw holes. The flexible metal plate 16 is fixedly locked by inserting screws 162 through the openings in the flexible metal plate 16 into the screw holes at the tops of the metal posts 14. Openings are also provided in the bottom connection parts 1613 of the multiple auxiliary emitter lead terminals 161. The screws 162 are inserted through the openings in the bottom connection parts 1613 and the openings in the flexible metal plate 16 into the screw holes at the tops of the metal posts 14 to be fixedly locked.

[0061] Example 2

[0062] Reference Figures 1 - 10 , this embodiment provides a manufacturing method of a power chip press-packaging structure, including the following steps:

[0063] Reference Figure 1 , provide a bottom plate 11;

[0064] Reference Figure 2 , weld a plurality of IGBT chips 13 and a plurality of copper-clad ceramic plates 12 on the bottom plate 11; each IGBT chip 13 is electrically connected to the copper-clad ceramic plate 12 respectively;

[0065] Reference Figure 3 , form metal posts 14 on each IGBT chip 13 and each copper-clad ceramic plate 12, and the top surfaces of the metal posts 14 are located on the same horizontal plane;

[0066] Reference Figure 4 , set a flexible metal plate 16, the bottom surface of the flexible metal plate 16 covers and contacts the top surfaces of the metal posts 14; set a plurality of auxiliary emitter lead terminals 161 on the top surface of the flexible metal plate 16;

[0067] Reference Figure 6 , set a multi-layer PCB board 18, the multi-layer PCB board 18 is arranged above the flexible metal plate 16, and the multi-layer PCB board 18 is in electrical contact with the plurality of auxiliary emitter lead terminals 161; through holes penetrating the multi-layer PCB board 18 are provided in the multi-layer PCB board 18;

[0068] Reference Figure 7 , set an emitter electrode 19, the emitter electrode 19 is arranged above the multi-layer PCB board 18, the emitter electrode 19 has a plurality of crimping arms 191, and the plurality of crimping arms 191 pass through the through holes in the multi-layer PCB board 18 to be crimped with the flexible metal plate 16.

[0069] The manufacturing method of the power chip press-packaging structure in this embodiment further includes the following steps:

[0070] Reference Figure 5, a housing 17 is provided. The housing 17 is located on the bottom plate 1. The housing 17 surrounds a plurality of IGBT chips 13, a plurality of copper-clad ceramic boards 12, metal posts 14, and a flexible metal plate 16. One side wall surface of the housing 17 has an opening. The emitter electrode 19 is engaged with the housing 17. The housing 17, the emitter electrode 19, and the bottom plate 11 jointly achieve a full-enclosure packaging for the plurality of IGBT chips 13 and the plurality of copper-clad ceramic boards 12. One end of the multi-layer PCB board 18 extends out of the housing 17 from the opening of the housing 17.

[0071] The manufacturing method of the power chip press-packaging structure of this embodiment can be used to manufacture the power chip press-packaging structure of the present invention. Through the settings of the bottom plate 11, the copper-clad ceramic board 12, the metal posts 14, the flexible metal plate 16, the multi-layer PCB board 18, and the emitter electrode 19, the press-packaging of the plurality of IGBT chips 13 is achieved. The metal posts 14, the IGBT chips 13, and the bottom plate 11 can be sintered by using the double-sided sintering technology to reduce the contact resistance and thermal resistance of the IGBT chips 13, so as to reduce the loss, thereby meeting the heat dissipation requirements of the high-voltage power chip under high turn-off speed. The flexible metal plate 16 is used to electrically connect the IGBT chips 13 through the metal posts 14 to achieve zero pressure on the surface of the IGBT chips 13, which can prevent mechanical damage to the surface of the IGBT chips 13. The power loop is directly led out through the metal posts by using the sintering process, eliminating the parasitic parameters generated by the traditional bonding wires; the area of the power loop in the press-connection direct connection packaging method is much smaller than that of the welding packaging type, so the parasitic parameters are also smaller; the parasitic parameters generated by the metal posts with a larger area itself are smaller than those of the thin bonding wires; therefore, the parasitic parameters in the power chip press-packaging structure of the present invention are smaller, and thus the loss of the high-voltage power chip under high turn-off speed is lower.

[0072] In this embodiment, the press arm 191 is a hollow structure, and an elastic structure is filled in the press arm 191; the elastic structure can be in the form of the elastic structure 1911 as Figure 10 shown, including a plurality of sub-elastic structures. Each sub-elastic structure includes a base and arm portions extending in a cross-radial manner. The adjacent arm portions of adjacent sub-elastic structures are connected, and the plurality of sub-elastic structures form an elastic structure through the connection of the arm portions; among them, the elastic structure 1911 is formed by 3D printing. The special structure of the elastic structure 1911 is formed by 3D printing, which is simple to manufacture and can ensure good heat dissipation effect and elastic effect at the same time.

[0073] Embodiment 3

[0074] Refer to Figures 11 - 20 , this embodiment provides another power chip press-packaging structure, including:

[0075] Bottom plate 21; multiple IGBT chips 231 and multiple copper-clad ceramic plates 22 are arranged on the bottom plate 21; each IGBT chip 231 is electrically connected to a copper-clad ceramic plate 22; metal posts 24 are arranged on each IGBT chip 231 and each copper-clad ceramic plate 22, and the top surfaces of the metal posts 24 are located on the same horizontal plane. The material of the metal posts 24 can be molybdenum-copper alloy or other thermally conductive and electrically conductive metals with a thermal expansion coefficient close to that of the IGBT chip 231.

[0076] Flexible metal plate 26, the bottom surface of the flexible metal plate 26 covers and contacts the top surfaces of the metal posts 24.

[0077] Multi-layer PCB board 28, the multi-layer PCB board 28 is located above the flexible metal plate 26, and the multi-layer PCB board 28 has a plurality of through holes penetrating the multi-layer PCB board 28.

[0078] Emitter electrode 29, the emitter electrode 29 is located above the multi-layer PCB board 28, the emitter electrode 29 has a plurality of crimping arms, and the plurality of crimping arms pass through the through holes of the multi-layer PCB board 28 and are crimped to the flexible metal plate 26.

[0079] In the power chip crimping and packaging structure of this embodiment, through the settings of the bottom plate 21, copper-clad ceramic plate 22, metal post 24, flexible metal plate 26, multi-layer PCB board 28 and emitter electrode 29, the crimping and packaging of multiple IGBT chips 23 are realized. The metal post 24, IGBT chip 23 and bottom plate 21 can be sintered by using the double-sided sintering technology, reducing the contact resistance and thermal resistance of the IGBT chip 231 to reduce losses, so as to meet the heat dissipation requirements of high-voltage power chips, especially IGBT chips at high turn-off speeds. The flexible metal plate 26 is used to electrically connect the IGBT chip 23 through the metal post 24 to achieve zero pressure on the surface of the IGBT chip 23, which can prevent mechanical damage to the surface of the IGBT chip 23; the power loop is directly led out through the metal post 24 by using the sintering process, eliminating the parasitic parameters generated by traditional bonding wires; the area of the power loop in the crimping and direct connection packaging method is much smaller than that of the welding packaging type, so the parasitic parameters are also smaller; the parasitic parameters generated by the relatively large metal post 24 itself are smaller than those of the fine bonding wire; therefore, the parasitic parameters in the power chip crimping and packaging structure of the present invention are smaller, and thus the losses of high-voltage power chips at high turn-off speeds are lower.

[0080] In this embodiment, the power chip crimping and packaging structure further includes:

[0081] Housing 27, the housing 27 is located on the bottom plate 21, the housing 27 surrounds multiple IGBT chips 231, multiple copper-clad ceramic plates 22, metal posts 24 and the flexible metal plate 26, and one side wall surface of the housing 27 has an opening.

[0082] The emitter electrode 29 is joined to the case 27, and the case 27, the emitter electrode 29, and the base plate 21 together achieve a full-enclosure package for the multiple IGBT chips 23 and the multiple copper-clad ceramic plates 22.

[0083] One end of the multi-layer PCB board 28 extends out of the case 27 from the opening of the case 27.

[0084] The power chip press-packaging structure of this embodiment completes the full-enclosure package for the IGBT chip 231 through the settings of the case 27, the base plate 21, and the emitter electrode 29, forming a power device.

[0085] Reference Figures 11 - 12 , in this embodiment, the arrangement of the multiple IGBT chips 231 and the multiple copper-clad ceramic plates 12 forms at least one arrangement unit arranged in the following manner:

[0086] The multiple IGBT chips 13 are divided into two groups and arranged symmetrically. A copper-clad ceramic plate 22 is provided on the side of each group of IGBT chips 13. A central copper-clad ceramic plate 221 is provided between the two groups of IGBT chips 231. The gates of the respective IGBT chips 23 are electrically connected to the central copper-clad ceramic plate 221. The arrangement of the IGBT chips 231 and the copper-clad ceramic plate 221 enables the gates of the multiple IGBT chips 231 to be connected to the central copper-clad ceramic plate 221, which is beneficial to the centralized extraction of the gates, and is conducive to the simplification of the packaging structure and heat dissipation.

[0087] In this embodiment, the extraction of the gates can refer to Figures 13 - 17 , and Figure 19 and Figure 20 . The number of the central copper-clad ceramic plates 221 is multiple, and each IGBT chip 231 is electrically connected to the nearest central copper-clad ceramic plate 221; the metal posts 242 on the central copper-clad ceramic plate 221 are provided with first positioning holes extending from the top surface of the metal posts to the bottom surface of the metal posts; the power chip press-packaging structure further includes: multiple gate extraction spring probes 252, each gate extraction spring probe 252 is respectively arranged in each first positioning hole and is electrically connected to the metal post 242; the side of the flexible metal plate 26 is provided with a groove penetrating the flexible metal plate 26, and the multiple gate extraction spring probes 252 respectively penetrate the flexible metal plate 26 through the groove; the multi-layer PCB board 28 presses each gate extraction spring probe 252.

[0088] In this embodiment, the metal posts 241 on the IGBT chip 231 are provided with second positioning holes extending from the top surface of the metal posts to the bottom surface of the metal posts; the power chip press-packaging structure further includes: a plurality of auxiliary emitter lead spring probes 251, each of the auxiliary emitter lead spring probes 251 is respectively disposed in each of the second positioning holes and is electrically connected to the metal post 241; the plurality of auxiliary emitter lead spring probes 251 respectively penetrate through the flexible metal plate 26 through through holes; the multi-layer PCB board 28 presses each of the auxiliary emitter lead spring probes 251; the auxiliary emitter lead spring probes 251 and the gate lead spring probes 252 are connected to different circuits in the multi-layer PCB board 28.

[0089] Through the arrangement that the gate lead spring probes 252 electrically connected to the central copper-clad ceramic substrate 221 and the auxiliary emitter lead spring probes 251 electrically connected to the IGBT chip 231 are respectively connected to different circuits of the multi-layer PCB board 28, the separation of the power loop and the drive loop can be realized, the parasitic parameters of the power loop and the influence of the drive loop can be effectively reduced, and the voltage overshoot phenomenon during dynamic parameter testing can be reduced; thereby, the parasitic parameters of the drive loop can be reduced, and the loss of the high-voltage power chip at high turn-off speed can be reduced.

[0090] In addition, the metal posts 24 further include metal posts 244 located on the top surface of the copper-clad ceramic plate 22 on the side of the two groups of IGBT chips 231 that are not provided with positioning holes, and these metal posts 244 are electrically connected to the flexible metal plate 26 through the top surface.

[0091] In this embodiment, the arranging unit further includes: a plurality of fast recovery diodes 232, each of the fast recovery diodes 232 is symmetrically disposed on the sides of the two groups of IGBT chips 231 and is in the same column or the same row as the copper-clad ceramic plate on the side; a metal post 243 is disposed on the top surface of each of the fast recovery diodes 232, and a third positioning hole is disposed on the top surface of the metal post 243 on the top surface of each of the fast recovery diodes 232; the flexible metal plate 26 is locked and fixed by a screw 261 passing through the third positioning hole.

[0092] In addition, the setting of the press-bonding arm is the same as that in the above Embodiment 1, and it can also be a hollow structure, and an elastic structure can also be filled in the hollow structure. The specific setting of the press-bonding arm and the specific setting of the elastic structure can refer to the description in Embodiment 1, and will not be elaborated here.

[0093] Embodiment 4

[0094] Reference Figures 11 - 20 , this embodiment provides a manufacturing method of a power chip press-packaging structure, including the following steps:

[0095] Reference Figure 11 , provide a bottom plate 21;

[0096] Reference Figure 12, multiple IGBT chips 231 and multiple copper-clad ceramic plates 22 are welded on the bottom plate 21; each IGBT chip 231 is electrically connected to a copper-clad ceramic plate 22 respectively; wherein the copper-clad ceramic plate 22 includes multiple central copper-clad ceramic plates 221, and the gates of each IGBT chip 231 are respectively connected to the nearest central copper-clad ceramic plate 221;

[0097] Reference Figure 13 , metal posts 24 are formed on each IGBT chip 231 and each copper-clad ceramic plate 22, and the top surfaces of the metal posts 24 are located on the same horizontal plane; the metal posts 24 include metal posts 241 on the top surface of the IGBT chip 231 and metal posts 242 on the top surface of the central copper-clad ceramic plate;

[0098] Reference Figure 14 , spring probes 25 are arranged, and the spring probes 25 include gate lead spring probes 252 on the metal posts 242 on the top surface of the central copper-clad ceramic plate 221 and auxiliary emitter lead spring probes 251 on the metal posts 241 on the top surface of the IGBT chip 231.

[0099] Reference Figure 15 A flexible metal plate 26 is arranged, and the bottom surface of the flexible metal plate 26 covers and contacts the top surfaces of the metal posts 24;

[0100] Reference Figure 17 , a multilayer PCB board 28 is arranged above the flexible metal plate 26, the multilayer PCB board 28 is electrically contacted with multiple auxiliary emitter lead spring probes 251 and multiple gate lead spring probes 252 respectively, and the two are respectively connected to different circuits in the multilayer PCB board 28; through holes penetrating the multilayer PCB board 28 are formed in the multilayer PCB board 28;

[0101] Reference Figure 18 , an emitter electrode 29 is arranged above the multilayer PCB board 28, the emitter electrode 29 has multiple crimping arms, and the multiple crimping arms pass through the through holes of the multilayer PCB board 28 and are crimped to the flexible metal plate 26.

[0102] The manufacturing method of the power chip crimping and packaging structure of this embodiment further includes the following steps:

[0103] Reference Figure 5, a case 27 is provided. The case 27 is located on the bottom plate 21. The case 27 surrounds a plurality of IGBT chips 231, a plurality of copper-clad ceramic plates 22, metal posts 24, and a flexible metal plate 26. One side wall surface of the case 27 has an opening. The emitter electrode 29 is joined to the case 27. The case 27, the emitter electrode 29, and the bottom plate 21 together achieve a full-enclosure packaging for the plurality of IGBT chips 23 and the plurality of copper-clad ceramic plates 22. One end of the multi-layer PCB board 28 extends out of the case 27 from the opening of the case 27.

[0104] The manufacturing method of the power chip press-packaging structure of this embodiment can be used to manufacture the power chip press-packaging structure of the present invention. Through the settings of the bottom plate 21, the copper-clad ceramic plate 221, the metal posts 24, the flexible metal plate 26, the multi-layer PCB board 28, and the emitter electrode 29, the press-packaging of a plurality of IGBT chips 231 is achieved. The metal posts 24, the IGBT chips 231, and the bottom plate 21 can be sintered by using the double-sided sintering technology, reducing the contact resistance and thermal resistance of the IGBT chips 231 to reduce the loss, so as to meet the heat dissipation requirements of the high-voltage power chip at a high turn-off speed. The flexible metal plate 26 is used to electrically connect the IGBT chips 231 through the metal posts 24 to achieve zero pressure on the surface of the IGBT chips 231, which can prevent mechanical damage to the surface of the IGBT chips 231. The power loop is directly led out through the metal posts by using the sintering process, eliminating the parasitic parameters generated by the traditional bonding wires; the area of the power loop in the press-connection direct packaging method is much smaller than that of the welding packaging type, so the parasitic parameters are also smaller; the parasitic parameters generated by the relatively large metal posts themselves are smaller than those of the thin bonding wires; therefore, the parasitic parameters in the power chip press-packaging structure of the present invention are smaller, and thus the loss of the high-voltage power chip at a high turn-off speed is lower.

[0105] The technical solution disclosed by the present invention has been illustrated by the embodiments as above. It is believed that those skilled in the art can understand the present invention through the description of the above embodiments. Obviously, the above embodiments are only examples given for clear illustration, rather than limitations on the implementation manners. For those of ordinary skill in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation manners here. And the obvious changes or modifications derived therefrom are still within the protection scope of the present invention.

Claims

1. A power chip press-fit packaging structure, characterized in that Comprising: A bottom plate; multiple IGBT chips and multiple copper-clad ceramic plates are arranged on the bottom plate; each of the IGBT chips is electrically connected to the copper-clad ceramic plate; Metal columns are arranged on each of the IGBT chips and each of the copper-clad ceramic plates, and the top surfaces of the metal columns are located on the same horizontal plane; A flexible metal plate, the bottom surface of the flexible metal plate covers and contacts the top surfaces of the metal columns; A multi-layer PCB board, the multi-layer PCB board is located above the flexible metal plate, and the multi-layer PCB board has multiple through holes penetrating through the multi-layer PCB board; An emitter electrode, the emitter electrode is located above the multi-layer PCB board, the emitter electrode has multiple crimping arms, and the multiple crimping arms pass through the through holes of the multi-layer PCB board and are crimped to the flexible metal plate; Multiple auxiliary emitter lead terminals are arranged on the top surface of the flexible metal plate, and each of the auxiliary emitter lead terminals is in electrical contact with the flexible metal plate; the multi-layer PCB board is in electrical contact with each of the auxiliary emitter lead terminals; The multiple auxiliary emitter lead terminals are respectively located at positions on the top surface of the flexible metal plate corresponding to the IGBT chips, the auxiliary emitter lead terminals are electrically connected to the flexible metal plate and are electrically connected to the multi-layer PCB board; The multiple auxiliary emitter lead terminals include a top connection part, a bottom connection part, and a vertical part connecting the top connection part and the bottom connection part, the bottom connection part contacts the top surface of the flexible metal plate, the top connection part is in electrical contact with the multi-layer PCB board on the top surface of the multi-layer PCB board, and the vertical part is partially located at the side of the multi-layer PCB board.

2. The power chip crimping and encapsulation structure according to claim 1, wherein Further comprising: A case, the case is located on the bottom plate, the case surrounds the multiple IGBT chips, the multiple copper-clad ceramic plates, the metal columns and the flexible metal plate, and one side wall surface of the case has an opening; The emitter electrode and the case are joined to each other, and the case, the emitter electrode and the bottom plate jointly achieve a fully enclosed package for the multiple IGBT chips and the multiple copper-clad ceramic plates; One end of the multi-layer PCB board extends out of the case from the opening of the case.

3. The power chip crimping package structure according to claim 1, wherein The crimping arm is a hollow structure, and an elastic structure is filled in the crimping arm.

4. The power chip crimping package structure according to claim 3, wherein The elastic structure includes multiple sub-elastic structures, each sub-elastic structure includes a base part and arm parts extending in a cross-radial manner, adjacent arm parts of adjacent sub-elastic structures are connected, and the multiple sub-elastic structures form the elastic structure through the connection of the arm parts.

5. The power chip crimping package structure according to any one of claims 1-4, wherein The arrangement of the multiple IGBT chips and the multiple copper-clad ceramic plates forms at least one arrangement unit arranged in the following manner: The multiple IGBT chips are divided into two groups and arranged symmetrically. A copper-clad ceramic plate is provided on the side of each group of IGBT chips, and a central copper-clad ceramic plate is provided between the two groups of IGBT chips. The gates of the IGBT chips are electrically connected to the central copper-clad ceramic plate.

6. The power chip press-packaging structure according to claim 5, wherein The central copper-clad ceramic plate includes connecting portions on both sides and a heat dissipation support portion located between the connecting portions on both sides. Metal columns are provided on the heat dissipation support portion, and gate lead terminals are respectively provided on the connecting portions. The gate lead terminals penetrate through the through holes of the flexible metal plate and the multi-layer PCB board and are in electrical contact with the multi-layer PCB board on the top surface of the multi-layer PCB board; The auxiliary emitter lead terminal and the gate lead terminal are respectively connected to different circuits in the multi-layer PCB board.

7. The power chip press-packaging structure according to claim 5, wherein The number of the central copper-clad ceramic plates is multiple, and each IGBT chip is electrically connected to the nearest central copper-clad ceramic plate; The metal columns on the central copper-clad ceramic plate are provided with first positioning holes extending from the top surface of the metal column to the bottom surface of the metal column; The power chip press-packaging structure further includes: a plurality of gate lead spring probes, and each gate lead spring probe is respectively disposed in each of the first positioning holes and is electrically connected to the metal column; A groove penetrating through the flexible circuit board is provided on the side of the flexible circuit board, and the plurality of gate lead spring probes respectively penetrate through the flexible circuit board through the groove; The multi-layer PCB board presses each of the gate lead spring probes.

8. The power chip press-packaging structure according to claim 7, wherein The metal columns on the IGBT chip are provided with second positioning holes extending from the top surface of the metal column to the bottom surface of the metal column; The power chip press-packaging structure further includes: a plurality of auxiliary emitter lead spring probes, and each auxiliary emitter lead spring probe is respectively disposed in each of the second positioning holes and is electrically connected to the metal column; The plurality of auxiliary emitter lead spring probes respectively penetrate through the flexible circuit board through the through holes; The multi-layer PCB board presses each of the auxiliary emitter lead spring probes; the auxiliary emitter lead spring probes and the gate lead spring probes are connected to different circuits in the multi-layer PCB board.

9. The power chip press-packaging structure according to claim 8, wherein The arrangement unit further includes: a plurality of fast recovery diodes, and each fast recovery diode is symmetrically disposed on the side of the two groups of IGBT chips and is in the same row or column as the copper-clad ceramic plate on the side; Metal columns are provided on the top surfaces of the fast recovery diodes, and third positioning holes are provided on the top surfaces of the metal columns on the top surfaces of the fast recovery diodes; The flexible circuit board is locked and fixed by screws passing through the third positioning holes.

10. A manufacturing method of a power chip press-fit packaging structure, characterized in that Including the following steps: Provide a bottom plate; Weld a plurality of IGBT chips and a plurality of copper-clad ceramic plates on the bottom plate; Metal columns are formed on each of the IGBT chips and each of the copper-clad ceramic boards, and the top surfaces of the metal columns are located on the same horizontal plane; A flexible metal plate is provided, and the bottom surface of the flexible metal plate covers and contacts the top surfaces of the metal columns; A multi-layer PCB board is provided, and the multi-layer PCB board is disposed above the flexible metal plate. The multi-layer PCB board is provided with through holes penetrating the multi-layer PCB board; An emitter electrode is provided, and the emitter electrode is disposed above the multi-layer PCB board. The emitter electrode has a plurality of crimping arms, and the plurality of crimping arms pass through the through holes of the multi-layer PCB board and are crimped to the flexible metal plate; A plurality of auxiliary emitter lead terminals are provided on the top surface of the flexible metal plate, and each of the auxiliary emitter lead terminals is electrically contacted with the flexible metal plate; the multi-layer PCB board is electrically contacted with each of the auxiliary emitter lead terminals; The plurality of auxiliary emitter lead terminals are respectively disposed at positions on the top surface of the flexible metal plate corresponding to the IGBT chips. The auxiliary emitter lead terminals are electrically connected to the flexible metal plate and are electrically connected to the multi-layer PCB board; The plurality of auxiliary emitter lead terminals include a top connection portion and a bottom connection portion, and a vertical portion connecting the top connection portion and the bottom connection portion. The bottom connection portion contacts the top surface of the flexible metal plate, the top connection portion is electrically contacted with the multi-layer PCB board on the top surface of the multi-layer PCB board, and the vertical portion is partially located at the side portion of the multi-layer PCB board.

11. The manufacturing method of the power chip crimping and packaging structure according to claim 10, characterized in that, The crimping arm is a hollow structure, and an elastic structure is filled in the crimping arm; the elastic structure includes a plurality of sub-elastic structures, each sub-elastic structure includes a base portion and arm portions extending in a cross-radial manner, adjacent arm portions of adjacent sub-elastic structures are connected, and the plurality of sub-elastic structures form the elastic structure through the connection of the arm portions; The elastic structure is formed by 3D printing.

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