Coil current distribution type etching machine structure

Abstract

The present invention discloses a coil current distribution type etching machine structure, which includes: a first plasma reaction chamber, which has a first reaction chamber; a plurality of first C-shaped coils, which are arranged up and down on the periphery of the first reaction chamber, and each first C-shaped coil has a first input end and a first grounding end; and a first power supply module, which is electrically connected to the first input end one by one through a plurality of first variable capacitors. Through the implementation of the present invention, different cleaning energies can be dynamically provided to adapt to the cleaning of deposits of different thicknesses in different parts of the reaction chamber.

Description

Technical Field

[0001] The invention relates to an etching machine structure, in particular to a coil current distribution type etching machine structure. Background Art

[0002] For inductively coupled plasma (ICP), the position and length of the coil are very important. Once the length and position of the coil are fixed, they will not change, so the uniformity of plasma concentration, electron temperature distribution, and the position and degree of local damage in the reaction chamber will be fixed.

[0003] like Figure 1 As shown, after the etcher has been used for a period of time, polymer deposition after plasma reaction will occur on the wall of the reaction chamber (dark area P101 in the figure). The deposition of the polymer will cause distortion of the process parameters in the reaction chamber. In addition, when the thickness of the polymer deposition gradually increases, the level of impurity particles in the reaction chamber will also increase, thus causing a problem that seriously affects the yield rate.

[0004] In existing inductively coupled plasma etchers, especially when using dry cleaning, the thickness of polymer deposits in each part is different. Therefore, how to design a mechanism to provide different cleaning energies for different parts so that the polymer can be effectively removed (light-colored area P102 in the figure) has become an important issue in equipment research and development. Summary of the invention

[0005] The present invention is a coil current distribution type etching machine structure, which mainly solves how to make the coil provide different magnetic fields according to the conditions, so as to dynamically generate different plasma densities in different parts to provide different cleaning energies.

[0006] The present invention provides a coil current distribution type etching machine structure, which includes: a first plasma reaction chamber, which has a first reaction chamber; a plurality of first C-shaped coils, which are arranged up and down on the periphery of the first reaction chamber, and each first C-shaped coil has a first input end and a first grounding end; and a first power supply module, which is electrically connected to the first input end one by one through a plurality of first variable capacitors.

[0007] In one embodiment of the present invention, the plurality of first C-shaped coils are arranged parallel to each other.

[0008] In one embodiment of the present invention, the plurality of first C-shaped coils are arranged at equal intervals from each other.

[0009] In one embodiment of the present invention, an anti-surge capacitor is disposed between the first power module and the ground terminal.

[0010] In one embodiment of the present invention, a plurality of the grounding terminals are connected in series with capacitors and then electrically connected to the grounding terminal.

[0011] In one embodiment of the present invention, the coil current distribution type etching machine structure further comprises:

[0012] A second plasma reaction chamber having a second reaction chamber connected to the first reaction chamber;

[0013] A plurality of second C-shaped coils are arranged in an upper and lower manner on the periphery of the second reaction chamber, and each of the second C-shaped coils has a second input end and a second ground end; and

[0014] The second power module is electrically connected to the second input end in a one-to-one manner via a plurality of second variable capacitors.

[0015] In one embodiment of the present invention, the plurality of second C-shaped coils are arranged parallel to each other.

[0016] In one embodiment of the present invention, the plurality of second C-shaped coils are arranged at equal intervals from each other.

[0017] In one embodiment of the present invention, an anti-surge capacitor is disposed between the second power module and the ground terminal.

[0018] In one embodiment of the present invention, a plurality of the grounding terminals are connected in series with capacitors and then electrically connected to the grounding terminal.

[0019] By implementing the present invention, at least the following improved effects can be achieved:

[0020] (1) The coil can be used to selectively generate different plasma densities at different locations, thereby generating different cleaning energies in the reaction chamber.

[0021] (ii) It can reduce the level of impurity particles in the reaction chamber.

[0022] In order to enable any technician in this technical field to understand the technical content of the present invention and implement it accordingly, and according to the contents, claims and drawings disclosed in this specification, any technician in this technical field can easily understand the relevant purposes and advantages of the present invention, so the detailed features and advantages of the present invention will be described in detail in the implementation mode. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a real-life picture of the interior of a reaction chamber of an existing etching machine after it has been used for a period of time;

[0024] Figure 2 It is a schematic structural diagram of a coil current distribution type etching machine of a single plasma reaction chamber according to an embodiment of the present invention;

[0025] Figure 3 for Figure 2 A schematic diagram showing that an anti-surge capacitor is provided between the first power module and the ground terminal;

[0026] Figure 4 for Figure 2 The schematic diagram of the grounded end of the first C-shaped coil shown is connected in series with a capacitor and then grounded;

[0027] Figure 5 A schematic diagram of the structure of a coil current distribution type etching machine of a dual plasma reaction chamber according to an embodiment of the present invention;

[0028] Figure 6 for Figure 5 A schematic diagram showing that an anti-surge capacitor is provided between the second power module and the ground terminal;

[0029] Figure 7 for Figure 5 The schematic diagram of the grounded end of the first C-shaped coil shown is connected in series with a capacitor and then grounded;

[0030] Figure 8 A simulation diagram of plasma reaction and cleaning of the first and second C-type coils of the first embodiment of the present invention;

[0031] Fig. 9 A simulation diagram of plasma reaction and cleaning of the first and second C-type coils according to the second embodiment of the present invention;

[0032] Fig.10 A simulation diagram of plasma reaction and cleaning of the first and second C-type coils according to the third embodiment of the present invention; and

[0033] Fig.11 It is a simulation diagram of the plasma reaction and cleaning of the first and second C-coils according to the fourth embodiment of the present invention.

[0034]

Explanation of symbols

[0035] P101: Dark Area

[0036] P102: Light-colored area

[0037] 100: Coil current distribution type etching machine structure

[0038] 110: First plasma reaction chamber

[0039] 111: First reaction chamber

[0040] 120a, 120b, 120c: first C-type coil

[0041] 121a, 121b, 121c: first input end

[0042] 122a, 122b, 122c: first grounding end

[0043] 130: First power module

[0044] 131a, 131b, 131c: first variable capacitor

[0045] 210: Second plasma reaction chamber

[0046] 211: Second reaction chamber

[0047] 220a, 220b, 220c: second C-type coil

[0048] 221a, 221b, 221c: second input end

[0049] 222a, 222b, 222c: second grounding end

[0050] 230: Second power module

[0051] 231a, 231b, 231c: second variable capacitor

[0052] C1: Anti-surge capacitor

[0053] C2: Isolation capacitor

[0054] GL: Ground terminal

[0055] I11, I12, I13: First current

[0056] I21, I22, I23: Second current DETAILED DESCRIPTION

[0057] like Figure 2 As shown, this embodiment provides a coil current distribution type etching machine structure 100, which includes: a first plasma reaction chamber 110; a plurality of first C-shaped coils 120a, 120b, 120c; and a first power module 130.

[0058] The first plasma reaction chamber 110 , for example, is a plasma reaction chamber that can perform an etching process. The first plasma reaction chamber 110 has a first reaction chamber 111 .

[0059] The first C-shaped coils 120a, 120b, 120c are formed in an upper and lower arrangement at the periphery of the first reaction chamber 111, and the first C-shaped coils 120a, 120b, 120c mainly provide energy for the first reaction chamber 111 to generate plasma; and each of the first C-shaped coils 120a, 120b, 120c has a first input end 121a, 121b, 121c and a first ground end 122a, 122b, 122c.

[0060] Regarding the arrangement of the first C-shaped coils 120a, 120b, 120c, they may be arranged parallel to each other and / or arranged at equal intervals.

[0061] The first power module 130 mainly provides power to the first C-type coils 120a, 120b, and 120c. The first power module 130 is electrically connected to the first input ends 121a, 121b, and 121c via a plurality of first variable capacitors 131a, 131b, and 131c. By changing the capacitance of each first variable capacitor 131a, 131b, and 131c, the magnitude of the first currents I11, I12, and I13 passing through each first C-type coil 120a, 120b, and 120c can be controlled respectively, for example, respectively between 1A (ampere) and 20A, and the ratios thereof are, for example, 10A:10A:10A, 1A:10A:20A, 20A:10A:1A, etc., which can be any combination.

[0062] The distribution of the above-mentioned first currents I11, I12, and I13 is mainly determined according to the location and degree of fouling in the first reaction chamber 111. By arranging the sizes of the first currents I11, I12, and I13, a specific first C-type coil 120a, 120b, and 120c can generate specific magnetic field energy, and different plasma energies can be generated at corresponding locations in the first reaction chamber 111. For locations with deep fouling, a larger current is used to generate high-energy plasma, and for locations with less fouling, a smaller current is used to generate low-energy plasma. In this way, the corresponding inner wall of the first reaction chamber 111 can generate different degrees of cleaning energy.

[0063] like Figure 3 and Figure 4 As shown, in order to avoid surges when the first power module 130 is input, an anti-surge capacitor C1 can be provided between the first power module 130 and the ground terminal GL. In order to ensure that the loop of the first C-shaped coil 120a, 120b, 120c can effectively block direct current or noise, the first grounding end 122a, 122b, 122c can be connected in series with an isolation capacitor C2 and then electrically connected to the ground terminal GL.

[0064] like Figure 5 As shown, in some processes, the etching machine structure 100 with the second plasma reaction chamber 210 is used, so the etching machine structure 100 will further have: a second plasma reaction chamber 210; a plurality of second C-shaped coils 220a, 220b, 220c; and a second power module 230.

[0065] The second plasma reaction chamber 210 , for example, is a plasma reaction chamber that can perform an etching process. The second plasma reaction chamber 210 has a second reaction chamber 211 that is connected to the first reaction chamber 111 .

[0066] The second C-shaped coils 220a, 220b, 220c are formed in an upper and lower arrangement at the periphery of the second reaction chamber 211, and the second C-shaped coils 220a, 220b, 220c mainly provide energy for the second reaction chamber 211 to generate plasma; and each second C-shaped coil 220a, 220b, 220c has a second input end 221a, 221b, 221c and a second ground end 222a, 222b, 222c.

[0067] Regarding the arrangement of the second C-shaped coils 220a, 220b, 220c, they may be arranged parallel to each other and / or arranged at equal intervals from each other.

[0068] The second power module 230 mainly provides power to the second C-type coils 220a, 220b, and 220c. The second power module 230 is electrically connected to the second input ends 221a, 221b, and 221c via a plurality of second variable capacitors 231a, 231b, and 231c. By changing the capacitance of each second variable capacitor 231a, 231b, and 231c, the magnitude of the second currents I21, I22, and I23 passing through each second C-type coil 220a, 220b, and 220c can be controlled respectively, for example, respectively between 1A and 20A, and the ratios thereof are, for example, 10A:10A:10A, 1A:10A:20A, 20A:10A:1A, etc., which can be any combination.

[0069] The distribution of the second currents I21, I22, and I23 is mainly determined according to the location and degree of fouling in the second reaction chamber 211. By arranging the sizes of the second currents I22, I23, and I3, a specific second C-type coil 220a, 220b, and 220c can generate specific magnetic field energy, and generate different plasma energies at the corresponding locations in the second reaction chamber 211. For locations with deep fouling, a larger current is used to generate high-energy plasma, and for locations with less fouling, a smaller current is used to generate low-energy plasma. In this way, the corresponding inner wall of the second reaction chamber 211 can generate different degrees of cleaning energy.

[0070] like Figure 6 and Figure 7As shown, in order to avoid surges when the second power module 230 is input, an anti-surge capacitor C1 can be provided between the second power module 230 and the ground terminal GL. In order to ensure that the loop of the second C-shaped coil 220a, 220b, 220c can effectively block direct current or noise, the second grounding end 222a, 222b, 222c can be connected in series with an isolation capacitor C2 and then electrically connected to the ground terminal GL.

[0071] like Figure 8 As shown, a half-side simulation is performed using the first reaction chamber 111, and the first currents I11, I12, and I13 of 1:1:1, for example, 20A:20A:20A, are input through the first C-type coils 120a, 120b, and 120. In this way, a plasma reaction can be generated in the first reaction chamber 111 at the corresponding positions of the first C-type coils 120a, 120b, and 120, and the inner wall fouling cleaning operation of the first reaction chamber 111 can be performed.

[0072] like Fig. 9 As shown, a half-side simulation is performed using the first reaction chamber 111, and a first current I11, I12, I13 of 1:0:0, for example, 20A:0A:0A, is input through the first C-type coils 120a, 120b, 120. In this way, a plasma reaction can be generated in the first reaction chamber 111 at the corresponding positions of the first C-type coils 120a, 120b, 120, and the inner wall fouling cleaning operation of the first reaction chamber 111 can be performed.

[0073] like Fig.10 As shown, a half-side simulation is performed using the first reaction chamber 111, and a first current I11, I12, I13 of 0:1:0, for example, 0A:20A:0A, is input through the first C-type coils 120a, 120b, 120. In this way, a plasma reaction can be generated in the first reaction chamber 111 at the corresponding positions of the first C-type coils 120a, 120b, 120, and the inner wall fouling cleaning operation of the first reaction chamber 111 can be performed.

[0074] like Fig.11 As shown, a half-side simulation is performed using the first reaction chamber 111, and a first current I11, I12, I13 of 0:0:1, for example, 0A:0A:20A, is input through the first C-type coils 120a, 120b, 120. In this way, a plasma reaction can be generated in the first reaction chamber 111 at the corresponding positions of the first C-type coils 120a, 120b, 120, and the inner wall fouling cleaning operation of the first reaction chamber 111 can be performed.

[0075] When cleaning the inner wall of the second reaction chamber 211, the same method can be used. Figures 8 to 11 The same cleaning effect can be achieved by operating in the same way.

[0076] However, the above embodiments are used to illustrate the features of the present invention, and their purpose is to enable technicians in this technical field to understand the contents of the present invention and implement them accordingly, rather than to limit the scope of protection of the present invention. Therefore, any other equivalent modifications or modifications that do not depart from the spirit disclosed by the present invention should still be included in the scope defined by the claims.

Claims

1. A coil current distribution type etching machine structure, characterized in that: include: A first plasma reaction chamber having a first reaction chamber; A plurality of first C-shaped coils are arranged in an upper and lower manner on the periphery of the first reaction chamber, and each of the first C-shaped coils has a first input end and a first ground end; and A first power module, which is electrically connected to the first input end in a one-to-one manner via a plurality of first variable capacitors; The first power module controls the magnitude of the first current passing through each of the first C-shaped coils by changing the capacitance of each of the first variable capacitors, and the proportions thereof can be arbitrarily combined; The distribution of the first current is determined according to the location and degree of fouling in the first reaction chamber. By arranging the size of the first current, a specific first C-type coil can generate a specific magnetic field energy, and a different plasma energy can be generated at the corresponding location in the first reaction chamber, so that the corresponding inner wall of the first reaction chamber can generate different degrees of cleaning energy.

2. The etching machine structure according to claim 1, characterized in that: The plurality of first C-shaped coils are arranged parallel to each other.

3. The etching machine structure according to claim 1, characterized in that: The plurality of first C-shaped coils are arranged at equal intervals from each other.

4. The etching machine structure according to claim 1, characterized in that: An anti-surge capacitor is arranged between the first power module and the ground terminal.

5. The etching machine structure according to claim 1, characterized in that: A plurality of the grounding ends are connected in series with capacitors and then electrically connected to the grounding end.

6. The etching machine structure according to claim 1, characterized in that: Also features: A second plasma reaction chamber having a second reaction chamber connected to the first reaction chamber; A plurality of second C-shaped coils are arranged in an upper and lower manner on the periphery of the second reaction chamber, and each of the second C-shaped coils has a second input end and a second ground end; and A second power module is electrically connected to the second input end in a one-to-one manner via a plurality of second variable capacitors; The second power module controls the magnitude of the second current passing through each of the second C-shaped coils by changing the capacitance of each of the second variable capacitors, and the ratio of the second current current passing through each of the second C-shaped coils can be arbitrarily combined; The distribution of the second current is determined according to the location and degree of fouling in the second reaction chamber. By arranging the size of the second current, a specific second C-type coil can generate a specific magnetic field energy, and a corresponding location in the second reaction chamber can generate different plasma energies, so that the corresponding inner wall of the second reaction chamber can generate different degrees of cleaning energy.

7. The etching machine structure according to claim 6, characterized in that: The plurality of second C-shaped coils are arranged parallel to each other.

8. The etching machine structure according to claim 6, characterized in that: The plurality of second C-shaped coils are arranged at equal intervals from each other.

9. The etching machine structure according to claim 6, characterized in that: An anti-surge capacitor is arranged between the second power module and the ground terminal.

10. The etching machine structure according to claim 6, characterized in that: A plurality of the grounding ends are connected in series with capacitors and then electrically connected to the grounding end.

Images