Method for manufacturing anodized film structure and anodized film structure

Abstract

The present invention relates to a method for manufacturing an anodic oxide film structure and an anodic oxide film structure, and in particular to a method for manufacturing an anodic oxide film structure and an anodic oxide film structure which can improve the production yield of the overall product by improving a defective area.

Description

Technical Field

[0001] The invention relates to a method for manufacturing an anodic oxide film structure and the anodic oxide film structure. Background Art

[0002] A blank made of anodized film material with little thermal deformation in a high-temperature atmosphere can be produced in various structures and can be used as a structure in the semiconductor or display fields, etc.

[0003] The blank of the anodic oxide film material can be made by the process of making the blank. The blank of the anodic oxide film material can be roughly made by the process described below.

[0004] First, an aluminum base material can be configured and an anodizing process can be performed. Through the process described above, an anodized film made of an anodized aluminum (Al2O3) film is formed on the surface of the base material. The anodized film is divided into a barrier layer in which no pores are formed inside and a porous layer in which pores are formed inside. The barrier layer is located on the upper part of the base material, and the porous layer is located on the upper part of the barrier layer. In this way, a process of removing the base material from the base material on which an anodized film having a barrier layer and a porous layer is formed on the surface can be performed. Through the process described above, an anodized film made of an anodized aluminum (Al2O3) film is left.

[0005] A blank of anodized film material can be produced by performing many processes including the above-mentioned processes.

[0006] For example, a blank of anodized film material may be formed with holes formed by etching process so as to be used as a structure in a specific field. However, in the process of forming the holes, if the holes are not formed according to the design pattern (for example, the hole formation position, hole size and hole shape, etc.), a hole defect problem may occur. The hole defect generated in the blank can be regarded as a defect of the blank itself.

[0007] As described above, when a defect of a minute portion (for example, a defective hole) is regarded as a defect of the blank itself, there may be a problem that the production yield of the blank made of anodized film material is significantly reduced.

[0008] Therefore, it is necessary to develop a technology that can repair tiny defective parts of the blank of the anodized film material and solve the problem of reduced production yield of the blank.

[0009] [Prior art literature]

[0010] [Patent Document]

[0011] [Patent Document 1] Korean registered patent No. 10-0664900 Summary of the invention

[0012] [Problems to be solved by the invention]

[0013] The present invention is proposed to solve the above-mentioned problems, and its object is to provide a method for manufacturing an anodic oxide film structure and an anodic oxide film structure capable of improving a defective region and increasing production yield.

[0014] [Technical means to solve the problem]

[0015] According to one feature of the present invention, a method for manufacturing an anodized film structure comprises: a step of inspecting whether an anodized film plate has a defective area; and a step of repairing the defective area on the anodized film plate to improve the quality of the defective area.

[0016] In addition, the method includes the step of bonding the anodized film plate by means of a bonding layer disposed on at least one surface of the anodized film plate.

[0017] In addition, the anodized film plate includes a plurality of divided plates, and the repairing step is a step of replacing the divided plate including the defective region with a good divided plate to improve the defective region.

[0018] In addition, the repairing step is a step of cutting a part of the region including the defective region and replacing the cut part of the region with a good region to improve the defective region.

[0019] In addition, the repairing step is a step of filling a filler into the inside of the defective through-hole included in the defective region to improve the defective region.

[0020] According to another feature of the present invention, an anodized film structure includes: an anodized film plate including a plurality of partition plates; and a bonding layer disposed on at least one side of the anodized film plate and integrating the partition plates.

[0021] In addition, the anodized film plates are stacked in a plurality in an upper and lower manner, and the boundaries between the partition plates do not correspond to each other in adjacent upper partition plates and adjacent lower partition plates.

[0022] According to another feature of the present invention, the anodized film structure includes: an anodized film plate having a cutting area; a repair plate arranged in the cutting area; and a bonding layer arranged on at least one side of the anodized film plate and the repair plate to integrate the anodized film plate and the repair plate.

[0023] According to another feature of the present invention, the anodized film structure is provided with good through holes and repair holes in the anodized film plate, and includes a repair portion arranged around the repair holes.

[0024] [Effects of the Invention]

[0025] The present invention can prevent the problem of discarding an anodic oxide film plate with a slight defect as a whole defect. Therefore, the production yield of the anodic oxide film structure can be improved by effectively making a good anodic oxide film structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 FIG. 1 is a diagram schematically showing a repairing step of a first embodiment of a method for manufacturing an anodized film structure according to the present invention.

[0027] Figure 2 (a) to Figure 2 (c) and Figure 3 (a) to Figure 3 (d) is a diagram showing various embodiments of anodized film plates constituting the anodized film structure of the present invention.

[0028] Figure 4 It is a diagram showing an embodiment of the stacked structure of the anodized film structure of the present invention.

[0029] Figure 5 FIG. 1 is a diagram schematically showing a repairing step according to a second embodiment of the method for manufacturing an anodized film structure of the present invention.

[0030] Figure 6 Yes Figure 5 FIG. 1 is an enlarged diagram schematically showing the repair steps of the second embodiment.

[0031] Figure 7 FIG. 1 is a diagram schematically showing a repairing step of a third embodiment of the method for manufacturing an anodized film structure according to the present invention. DETAILED DESCRIPTION

[0032] The following content is only an example of the principle of the invention. Therefore, even if it is not clearly described or shown in this specification, a person skilled in the art can implement the principle of the invention and invent various devices included in the concept and scope of the invention. In addition, all conditional terms and embodiments listed in this specification should be understood in principle as only for the purpose of clearly understanding the concept of the invention, and are not limited to the embodiments and states specifically listed as described above.

[0033] The objects, features and advantages described above will become more apparent from the following detailed description in conjunction with the accompanying drawings, so that those skilled in the art to which the invention pertains can easily implement the technical concept of the invention.

[0034] The embodiments described in this specification will be described with reference to the cross-sectional views and / or stereograms as ideal illustrations of the present invention. In order to effectively illustrate the technical content, the thickness of the membrane and the region shown in these drawings and the diameter of the holes are exaggerated. The morphology of the illustrations may be deformed due to manufacturing technology and / or tolerances. Therefore, the embodiments of the present invention are not limited to the specific morphology shown, but also include changes in the morphology generated according to the manufacturing process.

[0035] When describing various embodiments, for convenience, even if the embodiments are different, the same names and reference numerals are given to the components that perform the same functions. In addition, for convenience, the components and operations that have been described in other embodiments will be omitted.

[0036] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, as shown below.

[0037] The method for manufacturing an anodized film structure of the present invention may include the following configurations: a step of inspecting whether the anodized film plate AP has a defective region PF; and a step of repairing the defective region PF existing in the anodized film plate AP to improve the quality.

[0038] The defective area PF of the anodized film plate AP may be a tiny crack or a concave portion generated during the manufacturing process of the anodized film plate AP. In addition, the defective area PF may mean a defective through hole 110 formed differently from the design pattern. Hereinafter, as an example, a case where the defective area PF is a defective through hole 110 formed differently from the design pattern will be described.

[0039] The present invention may perform the step of configuring the anodized film plate AP before performing the step of inspecting whether the defective region PF exists.

[0040] In the present invention, relatively small-sized partition plates DP may be respectively manufactured so as to constitute the original size of the anodized film plate AP. Then, a plurality of partition plates DP may be arranged in such a manner as to constitute the anodized film plate AP of the original size. In this case, the partition plates DP may be arranged on the bonding layer 60 of a size corresponding to the anodized film plate AP of the original size.

[0041] Then, in the present invention, as an example, since the defective region PF is a defective through-hole 110 , a process of forming the through-hole 100 in the anodized film plate AP may be performed.

[0042] In this case, the present invention can form the through hole 100 according to an embodiment of the step of configuring the anodized film plate AP.

[0043] Specifically, in the present invention, when the partition plates DP of small sizes are respectively manufactured and arranged, the through-hole 100 may be formed in each of the partition plates DP.

[0044] On the other hand, in the present invention, when an undivided raw anodized film sheet AP is arranged, the through-holes 100 may be formed in the anodized film sheet AP.

[0045] Preferably, the process of forming the through hole 100 may be performed after a photosensitive material capable of photolithography is disposed on at least one surface of the anodized film plate AP. The photosensitive material may function as a mask for forming the through hole 100 in the anodized film plate AP.

[0046] At least a portion of the photosensitive material may be patterned by a photolithography process. An etching process may be performed on the anodized film plate AP through the area removed by the patterning process. Thus, a through hole 100 may be formed. The photosensitive material may then be removed.

[0047] On the other hand, when the anodized film plate AP is configured as a divided structure by a dividing step described later, the through hole 100 can also be formed by a joining step performed before the dividing step. Detailed description of this will be described later in the description of the joining step performed before the dividing step.

[0048] Then, a step of inspecting whether the anodized film plate AP has a defective region PF (hereinafter referred to as an "inspection step") may be performed. The inspection step may be performed by an inspection unit adapted to inspect and determine the defective region PF of the anodized film plate AP.

[0049] The present invention can perform an inspection step once after the anodized film plate AP is formed from the plurality of divided plates DP.

[0050] Different from this, the present invention can also perform the inspection step individually after manufacturing each partition plate DP and forming the through hole 100 .

[0051] The present invention can check whether there is a defective area PF on the anodized film plate AP through the inspection step, and can determine the existence of the defective area PF.

[0052] In the present invention, a repairing step (hereinafter referred to as a "repairing step") for improving the PF of the defective region may be performed after the inspection step.

[0053] The repairing step may be performed through various embodiments. In this case, the anodized film plate AP may be configured in a suitable structure according to the execution process of the repairing step. Therefore, an additional step may be performed before performing the repairing step.

[0054] Figure 1FIG. 2 is a diagram schematically showing the repair steps according to the first embodiment of the present invention. Figure 1 As shown, in the repairing step of the first embodiment, the following process may be performed: the divided plate DP including the defective region PF of the anodized film plate AP divided into a plurality of plates is replaced with a good divided plate DP.

[0055] In the repairing step of the first embodiment, the anodized film plate AP may be formed of a plurality of divided plates DP. In the repairing step of the first embodiment, the divided plate DP including the defective region PF is replaced with a good divided plate DP, so that the defective region PF can be improved.

[0056] The present invention can configure the original anodized film plate AP in the configuration step of the anodized film plate AP. In this case, the present invention can perform a step of dividing the original anodized film plate AP into a plurality of pieces (hereinafter referred to as a "dividing step") before performing the repairing step of the first embodiment.

[0057] The dividing step can be used to arrange the divided plates DP at once in a manner such that the original size of the anodized film plates AP is formed. Preferably, the dividing step can be performed after the inspection step.

[0058] In the present invention, the segmentation step can be performed after pre-designing a segmentation structure that makes the most of the original good region GF that does not include the defective region PF through the inspection step. The original good region GF can be a region formed by good through holes 100. Therefore, the boundary 50 between the segmentation plates DP can be configured at the anodized film plate AP to a minimum.

[0059] Then, the dividing step may be performed to perform the repairing step of the first embodiment. At least any one of the divided panels DP divided by the dividing step may include the defective region PF.

[0060] The present invention can selectively perform a segmentation step in the step of configuring the anodized film plate AP according to the embodiment of configuring the anodized film plate AP.

[0061] Specifically, the present invention can omit the dividing step when the dividing plates DP are separately manufactured and the anodized film plates AP are arranged.

[0062] On the other hand, the present invention may perform the splitting step when an unsplit raw anodized film plate AP is arranged in the anodized film plate AP arrangement step. In this case, the present invention may preferably split the anodized film plate AP in a manner that the original good area GF of the anodized film plate AP can be used to the maximum extent in the splitting step.

[0063] As an example, Figure 1As shown, when the anodized film plate AP is divided into transverse strips, the divided plate DP including the defective area PF can be divided into a smaller area than other divided plates DP not including the defective area PF. Therefore, the original good area GF of the anodized film plate AP is utilized to the maximum extent, and only the defective area PF can be effectively replaced to achieve goodness.

[0064] In the present invention, as an example, the case where the defective region PF occurs only in one place is illustrated, but the defective region PF may occur in multiple places in one anodized film plate AP. Even in this case, the present invention can divide only the defective region PF with the smallest area through the dividing step.

[0065] As an example, the anodized film plate AP can be divided into a horizontal strip form, a vertical strip form, a polygonal form, a form in which only at least a part of the region is divided, etc. The division form of the anodized film plate AP is not limited thereto.

[0066] Then, a bonding step (hereinafter referred to as “bonding step”) may be additionally performed by using a bonding layer 60 disposed on at least one surface of the anodized film plate AP. The divided anodized film plates AP may be integrated by the bonding layer 60 .

[0067] On the other hand, the bonding step may also be performed before the segmentation step. In this case, it is preferred that the anodized film plate AP is configured in a state where the through hole 100 is not formed. The anodized film plate AP may be configured with a bonding layer 60 on at least one side. Then, at least a portion of the bonding layer 60 may be patterned by a photolithography process. The anodized film plate AP may be subjected to an etching process by utilizing the area removed by the patterning process. Therefore, the through hole 100 may be formed.

[0068] In contrast, in the present invention, when the split plates DP are separately manufactured to configure the anodized film plate AP, a bonding layer 60 having a size corresponding to the anodized film plate AP of the original size can be configured in the step of configuring the anodized film plate AP. In this case, the present invention can perform a bonding step of integrating the split plates DP in the step of configuring the anodized film plate AP.

[0069] In the present invention, when the bonding step is performed in the step of arranging the anodized film plate AP, it can be performed after the through holes 100 are formed in the partition plate DP.

[0070] Different from this, the present invention may also perform a bonding step before the partition plate DP forms the through hole 100. In this case, in the process of configuring the through hole 100, the bonding layer 60 may be used as a photosensitive material for configuring the through hole 100. Therefore, the bonding layer 60 may perform the function of providing an area for forming the through hole 100.

[0071] Since the bonding layer 60 needs to be patterned by a photolithography process and thus has photosensitivity characteristics, and needs to perform a bonding function, it can be formed of a structure having bonding characteristics.

[0072] In the case where the bonding step is performed before the segmentation step, the bonding layer 60 can perform the function of providing an area for forming the through hole 100. In addition, the bonding layer 60 can perform the function of integrating the anodized film plates AP divided by the segmentation step performed after the bonding step. Therefore, when the bonding step is performed before the segmentation step, the bonding layer 60 can simultaneously perform the function of providing an area for forming the through hole 100 and the function of integrating the segmentation plates DP.

[0073] In the present invention, in the case where the dividing step is performed after the bonding step, the anodized film plate AP may be divided using a unit capable of dividing only the anodized film plate AP excluding the bonding layer 60 .

[0074] Then, you can execute Figure 1 The repair steps of the first embodiment shown. Figure 1 In the embodiment, as an example, the case where the anodized film plate AP is divided into lateral strips is illustrated. In this case, the number of divisions of the anodized film plate AP is not limited.

[0075] exist Figure 1 As an example, the anodized film plate AP may include a first partition plate DP1, a second partition plate DP2, and a third partition plate DP3, and the first partition plate DP1 may include a defective region PF. Figure 1 In the figure, the first partition plate DP1, the second partition plate DP2 and the third partition plate DP3 can be positioned in sequence starting from the top.

[0076] In the repairing step of the first embodiment, a process of separating the partition plate DP including the defective region PF from the bonding layer 60 may be performed. Therefore, the first partition plate DP1 may be separated from the bonding layer 60. In the process as described above, an appropriate transfer unit capable of separating and transferring the partition plate DP from the bonding layer 60 may be used.

[0077] In the repairing step of the first embodiment, a temporary anodized film plate AP' including a first partition plate DP1 including a defective area PF and a replacement good partition plate DP may be configured. The temporary anodized film plate AP' may be divided and configured in the same structure as the anodized film plate AP including the first to third partition plates DP1, DP2, DP3.

[0078] The transfer unit can separate the good partition plate DP from the bonding layer 60 of the temporary anodized film plate AP'. Then, the good partition plate DP can be transferred to the position where the first partition plate DP1 is removed. Then, the bonding step can be performed. The good partition plate DP can be integrated with the remaining partition plates (e.g., the second partition plate DP2, the third partition plate DP3) of the anodized film plate AP through the bonding layer 60 of the anodized film plate AP.

[0079] In this way, the present invention can divide the anodized film plate AP so that only a specific portion (specifically, a portion including the defective region PF) can be removed and easily replaced, thereby executing the repair step of the first embodiment.

[0080] Through the repairing steps of the first embodiment, the original good areas (e.g., the second partition plate DP2, the third partition plate DP3) of the anodized film plate AP are used as they are, and only the bad areas (e.g., the first partition plate DP1) can be replaced to perform local goodness. Therefore, the problem of treating the anodized film plate AP as bad and discarding it due to the generation of a small part of badness can be prevented. Therefore, the manufacturing yield of the entire product of the anodized film structure including the anodized film plate AP can be improved.

[0081] Figure 2 (a) to Figure 2 (c) and Figure 3 (a) to Figure 3 (d) is a diagram schematically showing various embodiments of the anodized film plate AP constituting the anodized film structure 1 of the present invention as viewed from above.

[0082] The anodized film plate AP may be divided into various forms and include a plurality of divided plates DP. Figure 2 (a) to Figure 2 (c) and Figure 3 (a) to Figure 3 The number of the partition plates DP shown in (d) is shown as an example, and therefore the number of the partition plates DP is not limited.

[0083] A bonding layer 60 for integrating the partition plates DP may be disposed on at least one surface of the anodized film plate AP. In this case, the anodized film plate AP may be in a state where the defective region PF is repaired by the repairing step of the first embodiment and the entire region is improved.

[0084] The present invention may perform the step of dividing the anodized film panel AP to perform the repairing step of the first embodiment. The anodized film panel AP subjected to the dividing step may have different boundaries 50 according to the structure divided in the dividing step.

[0085] Therefore, if Figure 2 (a) to Figure 2(c) and Figure 3 (a) to Figure 3 As shown in (d) of FIG. 1 , the anodized film panel AP that has been subjected to the repairing step of the first embodiment may have a boundary 50 between the divided panels DP constituting the anodized film panel AP.

[0086] exist Figure 2 (a) to Figure 2 (c) and Figure 3 (a) to Figure 3 Various embodiments of the segmented structure of the anodized film plate AP are shown in (d).

[0087] like Figure 2 As shown in (a), the anodized film plate AP may include a partition plate DP divided into a vertical band shape. The anodized film plate AP may be formed by a plurality of regions in the form of vertical bands by distinguishing the boundaries 50 between the partition plates DP. In this case, at least one or more partition plates DP may be good partition plates DP replaced by the repair step of the first embodiment.

[0088] like Figure 2 As shown in (b), the anodized film plate AP may include a partition plate DP divided into polygonal shapes. In the present invention, as an example, the anodized film plate AP may be formed of a plurality of rectangular partition plates DP.

[0089] The rectangular partition plate DP can be formed by forming a lateral strip-shaped partition plate DP and a vertical strip-shaped partition plate DP on the anodized film plate AP. Therefore, in the anodized film plate AP, the lateral boundary 50 and the vertical boundary 50 can be arranged to intersect each other.

[0090] like Figure 2 As shown in (b), when the partition plates DP are divided into rectangular sections, they can be arranged on the anodized film plate AP in a checkerboard arrangement. In this case, at least one of the partition plates DP can be a good partition plate DP replaced by the repair step of the first embodiment.

[0091] like Figure 2 As shown in (c), the anodized film plate AP can be formed by dividing only a part of the region 10 by the boundary 50. Figure 2 In (c), as an example, a partial region 10 having a rectangular cross section with an area smaller than the overall area of ​​the anodized film plate AP may be configured. A partial region 10 may also be configured in a manner having a polygonal cross section. In this case, at least one of the two regions divided by the boundary 50 may be a region improved by the repair step of the first embodiment.

[0092] Figure 3 (a) to Figure 3 (d) shows a diagram of an embodiment in which the anodized film plate AP is divided into a through hole existence region 130 where the through hole 100 exists and an edge region 120 where no through hole 100 exists. In this case, at least either the through hole existence region 130 or the edge region 120 can be a region improved by the repair step of the first embodiment.

[0093] like Figure 3 (a) to Figure 3 As shown in (d), the anodized film plate AP may include a through-hole region 130 and an edge region 120 .

[0094] The edge region 120 is a region where the through-hole 100 does not exist, and a separate additional process (eg, an etching process for forming the through-hole 100 ) is not performed, so the defect generation rate may be low.

[0095] Therefore, the present invention can improve the utilization of good regions by separately dividing the edge region 120 which is highly likely to be formed only of good regions and the through-hole existing region 130 .

[0096] The through hole region 130 is a region where a separate etching process for forming the through hole 100 is performed and may be a region where the possibility of generating the defective region PF is relatively high. In the present invention, such a through hole region 130 may include a plurality of partition plates DP.

[0097] The through-hole existing region 130 may include partition plates DP in various forms.

[0098] like Figure 3 As shown in (a), the through-hole region 130 may be divided into vertical bands. Therefore, the through-hole region 130 may have a boundary 50 in the vertical direction.

[0099] The possibility of the defective region PF occurring in the through hole existing region 130 may be relatively high. Figure 3 (a) to Figure 3 As shown in (d), the present invention can effectively repair the area with a high possibility of defective parts by dividing the through-hole existing area 130 into a plurality of structures.

[0100] In contrast, Figure 3 As shown in (b), the through hole region 130 may be divided into lateral bands. In this case, the anodized film plate AP may have a boundary 50 dividing the edge region 120 and the through hole region 130 and a lateral boundary 50 dividing the through hole region 130 into a plurality of regions.

[0101] In contrast, Figure 3As shown in (c), the through hole region 130 can be divided into polygonal shapes. As an example, the through hole region 130 can be divided into shapes having rectangular cross sections. Therefore, a plurality of partition plates DP having rectangular cross sections can be arranged in the through hole region 130.

[0102] With the above-described structure, the anodized film plate AP can have the lateral boundaries 50 and the vertical boundaries 50 that divide the through-hole existing region 130 into a checkerboard arrangement.

[0103] In contrast, Figure 3 As shown in (d), the through hole existing region 130 can be divided into only a part of the region 10. As an example, in Figure 3 In (d), the partial region 10 may be a rectangular cross-sectional region formed with an area smaller than the area of ​​the through-hole existing region 130 .

[0104] With the structure as described above, the anodized film plate AP may have a boundary 50 that separates the edge region 120 from the through-hole existing region 130. In addition, the anodized film plate AP may have a boundary 50 that separates a portion of the region 10 having an area smaller than that of the through-hole existing region 130 from the remaining through-hole existing region 130 except for the portion of the region 10.

[0105] like Figure 3 (a) to Figure 3 As shown in (d) of FIG. 1 , the through-hole existing region 130 can be divided into various forms by the boundary 50 existing in the through-hole existing region 130 .

[0106] Thus, the present invention can divide the through hole region 130 with a relatively high defective generation rate into a plurality of partition plates DP. Therefore, in the repairing step of the first embodiment of the present invention, the partition plate DP including only the defective region PF can be easily replaced with a good partition plate DP.

[0107] As described above, the method for manufacturing an anodized film structure of the present invention can replace the partition plates DP having a small defective portion with good partition plates DP through the repairing step of the first embodiment. Therefore, the anodized film plate AP can be formed only from good partition plates DP.

[0108] The anodized film structure 1 manufactured by the manufacturing method described above may include: an anodized film plate AP including a plurality of partition plates DP; and a bonding layer 60 disposed on at least one surface of the anodized film plate AP to integrate the partition plates DP.

[0109] The manufacturing method of the present invention can only partially repair the defective area PF of the anodized film plate AP to improve the anodized film plate AP. Therefore, the manufacturing method of the present invention can omit the process of discarding the anodized film plate AP with a small defective area as a whole and remaking it.

[0110] Since the anodized film plate AP is manufactured through many processes, it may take a long time to manufacture. The manufacturing method of the present invention can manufacture a small-sized split plate DP to constitute an anodized film plate AP of the original size. Alternatively, the present invention can manufacture an anodized film plate AP of the original size and then split it to constitute a split plate DP. Then, the present invention can only partially repair the defective part of the anodized film plate AP to achieve improvement.

[0111] Therefore, the process of re-manufacturing and re-arranging the anodized film plate AP with defective parts can be omitted. Therefore, a good anodized film structure 1 can be manufactured quickly and efficiently, and the production yield can be improved.

[0112] Figure 4 The figure is a cross-sectional view showing an embodiment of the stacked structure of the anodized film structure 1. Figure 4 As shown, the anodized film structure 1 is configured as a structure in which a plurality of anodized film structures are stacked, and can be used in the semiconductor or display fields.

[0113] As an example, the anodized film structure 1 may include an anodized film plate AP formed by a plurality of partition plates DP. Figure 4 As shown, the stacked anodic oxide film structure 1 may have the following structure: a plurality of anodic oxide film plates AP are stacked up and down and bonded to each other via a bonding layer 60 .

[0114] The anodized film plates AP stacked up and down may be arranged so that the boundaries 50 between the partition plates DP constituting each of them do not correspond to each other.

[0115] Specifically, a plurality of anodized film structures 1 are stacked from Figure 4 In the figure, starting from the bottom, it can be formed by a first anodized film plate AP1, a second anodized film plate AP2 and a third anodized film plate AP3 and positioned in sequence.

[0116] like Figure 4 As shown, as an example, the second anodized film plate AP2 may include a partition plate DP in a vertical band form. Therefore, a boundary 50 may exist between the partition plates DP of the second anodized film plate AP2 in the vertical direction.

[0117] In the above-described structure, the third anodized film plate AP3 and the first anodized film plate AP1 stacked on the upper and lower parts of the second anodized film plate AP2 may be configured in a divided structure different from that of the second anodized film plate AP2.

[0118] The third anodized film plate AP3 may be configured in a manner having a boundary 50 in a different direction from the second anodized film plate AP2 having a boundary 50 in a vertical direction. As an example, the third anodized film plate AP3 may be configured in a manner having a boundary 50 in a lateral direction and may be configured at the upper portion. In other words, the third anodized film plate AP3 may include a partition plate DP in the form of a lateral band. Therefore, a boundary 50 in a lateral direction may exist between the partition plates DP of the third anodized film plate AP3.

[0119] In contrast, the third anodized film plate AP3 may be formed by dividing only a partial region 10. In this case, as an example, the partial region 10 may be a region having a rectangular cross section formed with an area smaller than the entire area of ​​the third anodized film plate AP3.

[0120] Therefore, the third anodized film plate AP3 may have a boundary 50 that separates a portion of the region 10 from the rest. When the portion of the region 10 is formed in a rectangular cross section, the boundary 50 that forms the outline of the rectangular cross section may exist in at least a portion of the third anodized film plate AP3.

[0121] The laminated anodized film structure 1 may be provided with the third anodized film plate AP3 having the above-described structure on the second anodized film plate AP2. Therefore, the laminated anodized film structure 1 may be provided with a structure in which the boundaries 50 between the partition plates DP of each layer do not correspond to each other.

[0122] On the other hand, the first anodized film plate AP1 may have a boundary 50 in a direction different from the vertical direction boundary 50 of the second anodized film plate AP2 and be disposed at a lower portion.

[0123] As an example, the first anodized film plate AP1 may be formed of a partition plate DP in the form of a transverse strip and have a boundary 50 in the transverse direction.

[0124] In contrast, the first anodized film plate AP1 may be formed by dividing only a partial region 10. As an example, the partial region 10 may be a region having a rectangular cross section formed with an area smaller than the entire area of ​​the first anodized film plate AP1.

[0125] The stacked anodized film structure 1 may be provided with the first anodized film plate AP1 having the above-mentioned structure below the second anodized film plate AP2. Therefore, the boundary 50 between the partition plates DP of the second anodized film plate AP2 may not correspond to the boundary 50 between the partition plates DP of the first anodized film plate AP1.

[0126] The anodized film structure 1 stacked in this way can be formed into a structure in which the boundaries 50 between the partition plates DP of the anodized film plates AP1, AP2, and AP3 of each layer do not correspond to each other. Specifically, the adjacent anodized film plates AP may have boundaries 50 that do not correspond to each other. Therefore, the anodized film structure 1 stacked can be formed into a structure in which at least a portion of the boundaries 50 between the adjacent anodized film plates AP do not cross or overlap. The structure as described above can improve the durability of the anodized film structure 1 having a plurality of stacked structures.

[0127] On the other hand, corresponding boundaries 50 may be arranged between non-adjacent anodized film plates AP. Figure 4 As an example, the first anodized film plate AP1 and the third anodized film plate AP3 may be provided with the second anodized film plate AP2 therebetween. Therefore, the anodized film plates AP may be non-adjacent. The first anodized film plate AP1 and the third anodized film plate AP3 may have corresponding boundaries 50. In other words, the first anodized film plate AP1 and the third anodized film plate AP3 may include a partition plate DP of the same form.

[0128] The anodized film plates AP adjacent to the first anodized film plate AP1 and the third anodized film plate AP3, respectively, may be the second anodized film plate AP2. The stacked anodized film structure 1 may be a structure in which the boundaries 50 between the anodized film plates AP of adjacent layers do not correspond to each other. Therefore, the second anodized film plate AP2 may have boundaries 50 that do not correspond to the first anodized film plate AP1 and the third anodized film plate AP3, respectively. Therefore, even if the first anodized film plate AP1 and the third anodized film plate AP3 have boundaries 50 that correspond to each other, the problem of strength reduction can be prevented by the second anodized film plate AP2.

[0129] On the other hand, Figure 4 As shown, in the stacked anodized film structure 1, the bonding layer 60 that integrates the partition plates DP can be arranged between the anodized film plates AP1, AP2, and AP3 of each layer. With the structure as described above, at least one side of the boundary 50 of each layer can be bonded to the bonding layer 60. Therefore, the bonding layer 60 can integrate the partition plates DP of each layer, thereby improving the strength of the once stacked anodized film structure 1.

[0130] Thus, the anodized film structure 1 of the present invention can be arranged in a stacked structure so that the boundaries 50 between adjacent layers of anodized film panels AP do not correspond to each other. Therefore, the problem of a decrease in the strength of the anodized film structure 1 in the stacked structure can be prevented.

[0131] Figure 5 1 is a diagram schematically showing a repairing step of a second embodiment of a method for manufacturing an anodized film structure of the present invention. Figure 6 This is a diagram schematically showing an enlarged view of a defective region PF to which a repairing step according to the second embodiment is performed.

[0132] like Figure 5 and Figure 6 As shown, in the repairing step of the second embodiment, the following process may be performed: a portion of the region 10 including the defective region PF is cut, and the cut portion of the region 10 is replaced with a good region GF. The portion of the region 10 includes the defective region PF and may include at least a portion of the good region GF adjacent to the defective region PF.

[0133] like Figure 5 and Figure 6 As shown, the anodized film plate AP can be inspected to expose the defective area PF.

[0134] Then, a process of cutting a portion of the region 10 including the defective region PF may be performed. A region where the portion of the region 10 is cut during the cutting process may be a cutting region 20.

[0135] In the present invention, as an example, the case where the cutting region 20 is formed in a rectangular cross section is illustrated, but the cutting region 20 may be formed in other cross-sectional shapes.

[0136] like Figure 6 As shown, through holes 100 may be arranged at the same pitch interval P in the anodized film plate AP. The through holes 100 are formed with a fine inner diameter and may have a narrow pitch interval. In this case, there may be a defective through hole 110 that is not formed according to the design pattern in the anodized film plate AP. Such a defective through hole 110 may be a defective region PF. On the other hand, the through hole 100 formed according to the design pattern may be a good region GF.

[0137] The bad area PF may be a part with a small area. Therefore, the anodized film plate AP is preferably capable of cutting the bad area PF and at least a part of the good area GF adjacent to the periphery of the bad area PF at one time. Therefore, other bad problems that may occur in the process of cutting the small area of ​​the anodized film plate AP can be prevented.

[0138] like Figure 5As shown, a repair plate DRP may be configured in the repair step of the second embodiment. The repair plate DRP may be a partition plate having an area smaller than or equal to the area of ​​the cutting area 20. In the present invention, as an example, the case where the area of ​​the repair plate DRP is smaller than the area of ​​the cutting area 20 is described.

[0139] The repair plate DRP may be configured with good through holes 100 in a structure having the same number as the number of the partial regions 10 cut out in the anodized film plate AP.

[0140] Specifically, the repair plate DRP can be cut from the original repair plate DRP in a structure including good through holes 100 and a structure including the same number of bad through holes 110 and good through holes 100 as the partial area 10 of the anodized film plate AP. This can be used to arrange the through holes 100 of the anodized film plate AP before the repair step of the second embodiment and the through holes 100 of the anodized film plate AP after the repair step of the second embodiment to be the same.

[0141] like Figure 6 As shown, the repair plate DRP can be arranged in the cutting area 20 of the anodized film plate AP. In this case, the repair plate DRP can be arranged by bonding the repair plate DRP to the cutting area 20 through a bonding layer 60 configured on at least one side of the anodized film plate AP. At this time, the bonding layer 60 can integrate the anodized film plate AP with the repair plate DRP configured in the cutting area 20.

[0142] The repair plate DRP may be configured in such a manner as to have the same pitch interval P as that of the through holes 100 before the repair step is performed on the anodized film plate AP.

[0143] Therefore, the anodized film plate AP that has performed the repair step of the second embodiment can be structured as follows: the through holes 100 of the repair plate DRP and the through holes 100 of the adjacent anodized film plate AP are arranged at the same pitch spacing P as the pitch spacing P of the through holes 100 of the original anodized film plate AP.

[0144] The anodized film plate AP can improve the defective area PF through the repairing step of the second embodiment. At this time, the anodized film plate AP can be configured with the repair plate DRP in a manner that the pitch interval P between the through holes 100 of the original blank is maintained. Therefore, even if the anodized film plate AP has other plates (specifically, repair plates) formed of the same or different materials through the repairing step, the function of using the through holes 100 can be performed without error.

[0145] In this way, the method for manufacturing an anodized film structure of the present invention can cut the portion where the defective region PF exists through the repairing step of the second embodiment, and replace the cut portion with a good product.

[0146] The anodized film structure produced by the manufacturing method as described above may include the following: an anodized film plate AP, configured with a cutting area 20; a repair plate DRP, configured in the cutting area 20; and a bonding layer 60, configured on at least one side of the anodized film plate AP and the repair plate DRP to integrate the anodized film plate AP and the repair plate DRP.

[0147] like Figure 6 As shown, in the case where the area of ​​the repair plate DRP is configured to be smaller than the area of ​​the cutting region 20, the anodized film structure 1 may be formed into a structure in which a portion of the bonding layer 60 is exposed at the periphery of the repair plate DRP.

[0148] The anodized film structure 1 can be configured with a cut region 20 by cutting a portion of the region 10 including the defective region PF and the original good region GF. The repair plate DRP can be arranged in such a cut region 20. Therefore, the anodized film structure 1 can have a structure having a boundary 50 between the repair plate DRP and the original good region GF.

[0149] The manufacturing method of the present invention can only partially repair the defective part of the anodized film plate AP through the repairing step as described above. Therefore, the anodized film structure 1 can be manufactured by only configuring the good anodized film plate AP. Therefore, the overall production yield of the anodized film structure 1 can be improved.

[0150] Figure 7 1 is a diagram schematically showing a repairing step according to a third embodiment of the present invention. In the repairing step of the third embodiment, the following process may be performed: the inside of the defective through hole 110 included in the defective region PF is filled with a filler 40 to improve the defective region PF.

[0151] like Figure 7 As shown, the anodized film plate AP may form a through hole 100 different from the design pattern to generate a defective region PF. The defective region PF may include a defective through hole 110.

[0152] First, a process of filling the defective through hole 110 with the filler 40 may be performed. Thus, the filler 40 may be filled in the interior of the through hole 100. The filler 40 filled into the defective through hole 110 may be a filler having an inorganic ceramic property, and may be a filler formed of aluminum oxide (Al2O3) in a powder form.

[0153] The anodized film plate AP may be provided with a repairing portion 80 by filling the inside of the defective through hole 110 with the filler 40. The repairing portion 80 may be a portion for processing the repairing hole 70.

[0154] Then, a hole processing process for processing the repair hole 70 in the repair part 80 may be performed. As the hole processing process, at least one processing method of laser, drilling, or etching processing may be used. The process of processing the repair hole 70 may be a process of improving the defective through hole 110.

[0155] like Figure 7 As shown, the repair hole 70 can be formed within the range of the repair portion 80. Therefore, after the repair hole 70 is formed in the repair portion 80, at least a portion of the repair portion 80 can be retained as it is. The anodized film structure 1 can be formed into a structure in which at least a portion of the repair portion 80 is arranged around the repair hole 70 due to the retained at least a portion of the repair portion 80.

[0156] The anodized film structure 1 manufactured by the manufacturing method of the repair step of the third embodiment described above can be configured with good through holes 100 and repair holes 70 in the anodized film plate AP, and includes a repair portion 80 configured around the repair hole 70.

[0157] A plurality of such anodized film structures 1 may be arranged and stacked. In this case, a bonding layer 60 may be additionally arranged on at least one surface of the anodized film plate AP.

[0158] The laminated anodized film structure 1 may have defective through holes 110 at positions corresponding to each other. In this case, the laminated anodized film structure 1 may have performance degraded due to the defective through holes 110.

[0159] In this way, the present invention can improve all defective through holes 110 in each layer through the repairing step of the third embodiment.

[0160] On the other hand, the present invention can also improve the quality of the defective through-holes 110 above and below the defective through-hole 110 through the repairing step of the third embodiment.

[0161] The stacked anodized film structure 1 can perform its function when good through holes 100 are arranged above and below the bad through holes 110. Therefore, in the repairing step of the third embodiment of the present invention, only when the bad through holes 110 exist on both sides can any one of the bad through holes 110 be repaired to achieve good quality.

[0162] The present invention can improve only a portion of the defective through holes 110 included in the stacked anodized film structure 1 in the repairing step of the third embodiment. Preferably, the improved defective through holes 110 can be the defective through holes 110 of the anodized film plate AP disposed on the surface forming the stacked anodized film structure 1. Therefore, the unrepaired defective through holes 110 can be located between the improved through holes 100.

[0163] In this way, the present invention can effectively manufacture an anodized film structure 1 that can provide high-quality functions through the manufacturing method including the repairing step of the third embodiment.

[0164] The anodized film structure 1 of the present invention may be composed of an anodized film plate AP having a repaired region. The repaired region may be a region improved by the repairing step of the manufacturing method of the present invention.

[0165] The present invention can improve the anodized film plate AP that is considered as a whole defect due to a minor defect through a repair step. At this time, the anodized film plate AP can only repair the defective part and use the original good area GF as it is. Therefore, the present invention can prevent the problem of discarding the anodized film plate AP that has a minor defect as a whole defect.

[0166] In addition, the present invention can omit the process of re-manufacturing the anodized film plate AP considered to be defective through the repair step. Therefore, the production yield of the anodized film structure 1 can be improved by efficiently manufacturing a good anodized film structure 1.

[0167] As described above, although the present invention has been described with reference to the preferred embodiments, a person skilled in the art may make various modifications or variations to the present invention without departing from the scope of the invention and the spirit and field of the invention as described in the following claims.

Claims

1. A method for manufacturing an anodized film structure, include: The step of removing the parent material to make the anodized film plate; The step of checking whether the anodized film plate has a defective area; as well as a repairing step of improving the defective area existing in the anodized film plate, The anodized film plate includes a plurality of partition plates, The repairing step is a step of replacing the partition plate including the defective area with a good partition plate to improve the defective area.

2. The method for manufacturing an anodized film structure according to claim 1, include: The step of bonding is performed by a bonding layer disposed on at least one surface of the anodized film plate.

3. A method for manufacturing an anodized film structure, include: The step of removing the parent material to make the anodized film plate; The step of checking whether the anodized film plate has a defective area; as well as a repairing step of improving the defective area existing in the anodized film plate, The repair steps are the following steps: A portion of the region including the defective region is cut and the cut portion of the region is replaced with a good region, so that the defective region is improved.

4. An anodic oxide film structure, include: Anodized film plates are produced by removing a parent material, and include a plurality of split plates; as well as The bonding layer is disposed on at least one side of the anodized film plate and integrates the partition plate, wherein The anodized film plates are stacked in multiple configurations, The boundaries between the partition plates do not correspond to each other in adjacent upper partition plates and lower partition plates.

5. An anodic oxide film structure, include: An anodized film plate, which is produced by removing a parent material and is provided with a cutting area; A repair plate, arranged in the cutting area; as well as The bonding layer is disposed on at least one side of the anodized film plate and the repair plate, and integrates the anodized film plate and the repair plate.

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