Light-emitting element, method for manufacturing the same, and composition comprising the same

Abstract

The present application relates to a light-emitting element, which includes a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; an insulating film surrounding the outer peripheral surface of each of the first semiconductor layer, the active layer and the second semiconductor layer; and a polymer film containing polymer chains and on at least a portion of the surface of the insulating film.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2020-0006124 filed on January 16, 2020 in the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of the present disclosure relate to a light emitting element, a method of manufacturing the light emitting element, and a composition including the light emitting element. Background Art

[0004] Light emitting diodes (hereinafter referred to as LEDs) have relatively good durability even under harsh environmental conditions and have excellent performance in terms of service life and brightness. Recently, research on applying such LEDs to various display devices has been actively conducted.

[0005] As part of this research, a technique for manufacturing ultra-small rod-shaped LEDs as small as micrometers or nanometers has been developed using an inorganic crystal structure (e.g., a structure in which a nitride semiconductor is grown). For example, rod-shaped LEDs can be manufactured in a size small enough to constitute pixels of a self-luminous display device. Summary of the invention

[0006] Exemplary embodiments of the present disclosure provide a light emitting element having excellent dispersibility and dispersion stability in a solution, a method of manufacturing the light emitting element, and a composition including the light emitting element.

[0007] A light-emitting element according to an exemplary embodiment of the present disclosure includes a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; an insulating film surrounding the outer peripheral surface of each of the first semiconductor layer, the active layer and the second semiconductor layer; and a polymer film containing a polymer chain and on at least a portion of the surface of the insulating film.

[0008] In an exemplary embodiment of the present disclosure, the light emitting element may further include an electrode layer on the second semiconductor layer.

[0009] In an exemplary embodiment of the present disclosure, the polymer film may further include a linker compound connecting the surface of the insulating film and an end of the polymer chain.

[0010] In an exemplary embodiment of the present disclosure, the linker compound may be a 1 -C 20 Alkylene group, composed of -(CH 2 )n -NR 1 -(where n is an integer of 1 or greater, and R 1 is hydrogen or C 1 -C 20 Alkyl group) represented by alkylamine group, C 1 -C 20 Ester group, C 1 -C 20 Ketone group, C 1 -C 20 A compound having at least one of an amide group and a siloxane group.

[0011] In an exemplary embodiment of the present disclosure, the polymer chain may include an aliphatic hydrocarbon repeating unit in a main chain.

[0012] In an exemplary embodiment of the present disclosure, the main chain of the polymer chain may have a carbon number of 10 or more.

[0013] In the exemplary embodiment of the present disclosure, the polymer chain may include a repeating unit including an aromatic ring in the main chain.

[0014] In the exemplary embodiment of the present disclosure, the main chain of the polymer chain may include 10 or more aromatic rings.

[0015] In an exemplary embodiment of the present disclosure, selected from C 3 -C 20 Alkyl group, C 2 -C 20 Ether group, C 2 -C 20 Ester group, C 1 -C 20 Amine group, C 2 -C 20 Amide group, hydroxyl group, C 1 -C 20 At least one substituent of an alkoxy group, a urethane group, a urea group, an imide group, an acryloyl group, and a thiol group may be bonded to the main chain of the polymer chain.

[0016] In the exemplary embodiment of the present disclosure, the polymer chain may include a repeating unit represented by the following Chemical Formula 1.

[0017] Chemical formula 1

[0018]

[0019] In Chemical Formula 1, R 2 and R 2Each of ' is independently hydrogen, C 1 -C 20 Alkyl group, C 2 -C 20 Ether group, C 2 -C 20 Ester group, C 1 -C 20 Amine group, C 2 -C 20 Amide group, hydroxyl group, C 1 -C 20 an alkoxy group, a urethane group, a urea group, an imide group, an acryl group or a thiol group.

[0020] In an exemplary embodiment of the present disclosure, the polymer chain may include a repeating unit represented by the following Chemical Formula 2.

[0021] Chemical formula 2

[0022]

[0023] In chemical formula 2, R 3 and R 3 Each of ' is independently hydrogen, C 1 -C 20 Alkyl group, C 2 -C 20 Ether group, C 2 -C 20 Ester group, C 1 -C 20 Amine group, C 2 -C 20 Amide group, hydroxyl group, C 1 -C 20 an alkoxy group, a urethane group, a urea group, an imide group, an acryl group or a thiol group.

[0024] In an exemplary embodiment of the present disclosure, the polymer chain may include a repeating unit represented by the following Chemical Formula 3.

[0025] Chemical formula 3

[0026]

[0027] In chemical formula 3, R 4 and R 4 Each of ' is independently hydrogen, C 1 -C 20 Alkyl group, C 2 -C 20 Ether group, C 2 -C 20Ester group, C 1 -C 20 Amine group, C 2 -C 20 Amide group, hydroxyl group, C 1 -C 20 an alkoxy group, a urethane group, a urea group, an imide group, an acryl group or a thiol group.

[0028] In the exemplary embodiment of the present disclosure, the molecular weight of the polymer chain may be 2,000 g / mol or more and 1,000,000 g / mol or less.

[0029] In the exemplary embodiment of the present disclosure, the thickness of the polymer film may be 10 nm or more and 100 nm or less.

[0030] A method for manufacturing a light-emitting element according to an exemplary embodiment of the present disclosure includes forming a light-emitting stack, wherein a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially stacked on a substrate; etching the light-emitting stack to form a light-emitting stack pattern; forming an insulating film on the light-emitting stack pattern; and forming a polymer film containing polymer chains on at least a portion of a surface of the insulating film.

[0031] In an exemplary embodiment of the present disclosure, the forming the polymer film may include introducing a linker compound to a surface of the insulating film.

[0032] In the exemplary embodiment of the present disclosure, in the forming of the polymer film, an end of the polymer chain formed by polymerization of a monomer may be bonded to the linker compound.

[0033] In an exemplary embodiment of the present disclosure, in the forming the polymer film, a monomer may be polymerized in the linker compound to form the polymer chain.

[0034] A composition according to an exemplary embodiment of the present disclosure includes a solvent; and a light-emitting element. The light-emitting element includes a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; an insulating film surrounding the outer peripheral surface of each of the first semiconductor layer, the active layer, and the second semiconductor layer; and a polymer film containing a polymer chain and on at least a portion of the surface of the insulating film.

[0035] In an exemplary embodiment of the present disclosure, the solvent includes at least one of an alkyl solvent containing an alkyl group, an ether solvent containing an ether group, an ester solvent containing an ester group, an amine solvent containing an amine group, an amide solvent containing an amide group, an alcohol solvent containing an alcohol group, a carbamate solvent containing a carbamate group, a urea solvent containing a urea group, an imide solvent containing an imide group, an acryl solvent containing an acryl group, and a thiol solvent containing a thiol group.

[0036] Exemplary embodiments of the present disclosure may provide a light emitting element having excellent dispersibility and / or solubility in a solvent.

[0037] For example, according to the exemplary embodiment of the present disclosure, by providing the light emitting element with a polymer film including a polymer chain, dispersibility and dispersion stability in the solvent may be improved.

[0038] However, the effects of the present disclosure are not limited to the above-described effects, but can be variously extended within a range not departing from the gist and scope of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The drawings, together with the specification, illustrate embodiments of the subject matter of the present disclosure, and, together with the description, serve to explain principles of the embodiments of the subject matter of the present disclosure.

[0040] Figure 1 is a perspective view showing a light emitting element according to an exemplary embodiment of the present disclosure.

[0041] Figure 2A and Figure 2B It is shown along Figure 1 1 is a cross-sectional view of a light emitting element according to various exemplary embodiments of the present disclosure, taken along line II′.

[0042] Figure 3 is a cross-sectional view schematically showing a polymer film on a surface of an insulating film according to an exemplary embodiment of the present disclosure.

[0043] Figures 4A to 4K are cross-sectional views sequentially showing a method of manufacturing a light emitting element.

[0044] Figure 5 is a diagram illustrating a composition including a light emitting element according to an exemplary embodiment of the present disclosure. DETAILED DESCRIPTION

[0045] It should be apparent to those skilled in the art that various modifications and changes may be made to the subject matter of the present disclosure without departing from the spirit or scope of the present disclosure, and certain exemplary embodiments are illustrated in the drawings and explained in the specific description. Therefore, it is intended that the present disclosure covers suitable modifications and changes to the subject matter of the present disclosure as long as they enter the spirit and scope of the present disclosure and its equivalents.

[0046] The same reference numerals designate the same elements throughout the specification. In the accompanying drawings, the size of the structure may be exaggerated for clarity. The terms "first", "second", etc. may be simply used to describe various constituent elements, but those meanings may not be limited to limited meanings. The above terms are only used to distinguish one constituent element from another constituent element. For example, within the scope of the appended claims, a first constituent element may be referred to as a second constituent element, and similarly, a second constituent element may be referred to as a first constituent element. When interpreting the singular, it may be understood as a plural meaning unless explicitly described to the contrary.

[0047] In the specification, the words "including" or "having" are used to specify the presence of features, numbers, processes, operations, constituent elements, parts or combinations thereof, and it should be understood that the presence or possibility of adding one or more other features, numbers, processes, operations, constituent elements, parts or combinations thereof is not precluded. In addition, it should be understood that when an element such as a layer, film, zone or substrate is referred to as being "on" another element, it can be directly on the other element or there can also be an intervening element. In the specification, it should be understood that when an element such as a layer, film, zone or substrate is referred to as being "on" another element, the direction of stacking is not limited to the upper direction, and can include stacking in the lateral direction or the lower direction. In addition, it should be understood that when an element such as a layer, film, zone or substrate is referred to as being "under" another element, it can be directly under the other element or there can also be an intervening element.

[0048] In the present specification, the term "repeating unit" may refer to a form in which a monomer reacts in a polymer, and may refer to a form in which a monomer forms a skeleton of a polymer (eg, a main chain of a polymer chain) through a polymerization reaction.

[0049] Hereinafter, exemplary embodiments of the present disclosure will be described in further detail with reference to the accompanying drawings.

[0050] Figure 1 is a perspective view showing a light emitting element according to an exemplary embodiment of the present disclosure, Figure 2A and Figure 2B It is shown along Figure 1 A cross-sectional view of a light emitting element according to various exemplary embodiments of the present disclosure taken along line II', and Figure 3 is a cross-sectional view schematically showing a polymer film on a surface of an insulating film according to an exemplary embodiment of the present disclosure.

[0051] exist Figure 1 , the light emitting element LD according to the exemplary embodiment of the present disclosure is shown as a light emitting element having a cylindrical shape, but the type (eg, composition) and / or shape of the light emitting element LD according to the exemplary embodiment of the present disclosure is not limited thereto.

[0052] refer to Figures 1 to 2B The light emitting element LD according to the exemplary embodiment of the present disclosure includes a first semiconductor layer 11, a second semiconductor layer 13, and an active layer 12 interposed between the first semiconductor layer 11 and the second semiconductor layer 13. According to the exemplary embodiment, the light emitting element LD may include a stacked structure in which the first semiconductor layer 11, the active layer 12, and the second semiconductor layer 13 are sequentially stacked in a length direction.

[0053] The light emitting element LD may be provided in a rod shape extending in one direction. When the extending direction of the light emitting element LD is referred to as a length direction, the light emitting element LD may have one end and the other end in the length direction. According to an exemplary embodiment, one of the first semiconductor layer 11 and the second semiconductor layer 13 may be located at one end of the light emitting element LD, and the other of the first semiconductor layer 11 and the second semiconductor layer 13 may be located at the other end of the light emitting element LD.

[0054] The light emitting element LD may be a rod-shaped light emitting diode manufactured to have a rod shape. In the present specification, the term "rod-shaped" refers to a rod-like shape or a rod-like shape that is long in the length direction (e.g., having an aspect ratio greater than 1), such as a cylinder or a polygonal cylinder, but the shape of its cross section is not particularly limited. For example, the length of the light emitting element LD may be greater than its diameter (or the width of the cross section). Hereinafter, for better understanding and ease of description, the light emitting element LD will be described as having a cylindrical shape, but the present disclosure is not limited thereto.

[0055] According to an exemplary embodiment, the light emitting element LD may have a size as small as nanometer to micrometer, for example, the light emitting element LD may have a diameter and / or length in the nanometer or micrometer range. However, the size of the light emitting element LD in the embodiment of the present disclosure is not limited thereto. For example, the size of the light emitting element LD may be variously changed according to the design conditions of various suitable devices (such as a display device as an example) using a light emitting device including the light emitting element LD as a light source.

[0056] For example, the first semiconductor layer 11 may include at least one n-type semiconductor layer. For example, the first semiconductor layer 11 may include any one semiconductor material selected from InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, and may include an n-type semiconductor layer doped with a first conductive dopant such as Si, Ge, Sn, etc. However, the material constituting the first semiconductor layer 11 is not limited thereto, and the first semiconductor layer 11 may be formed of various suitable materials.

[0057] The active layer 12 may be on the first semiconductor layer 11, and may be formed to have a single or multiple quantum well structure. In an exemplary embodiment, a cladding layer doped with a conductive dopant may be formed on and / or under the active layer 12. For example, the cladding layer may be formed of an AlGaN layer and / or an InAlGaN layer. According to an exemplary embodiment, a material such as AlGaN and / or InAlGaN may be used to form the active layer 12, and various suitable materials may constitute the active layer 12.

[0058] When an electric field greater than a set voltage or a predetermined voltage is applied to both ends of the light emitting element LD, the light emitting element LD emits light while electron-hole pairs are coupled in the active layer 12. By controlling the light emission of the light emitting element LD by using this principle, the light emitting element LD can be used as a light source for various suitable light emitting devices including pixels of a display device. The active layer 12 may include one surface contacting the first semiconductor layer 11 and another surface contacting the second semiconductor layer 13.

[0059] The second semiconductor layer 13 may be on the active layer 12 and may include a semiconductor layer of a different type (e.g., p-type or n-type) from the first semiconductor layer 11. For example, the second semiconductor layer 13 may include at least one p-type semiconductor layer. For example, the second semiconductor layer 13 may include at least one semiconductor material selected from InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, and may include a p-type semiconductor layer doped with a second conductive dopant such as Mg. However, the material constituting the second semiconductor layer 13 is not limited thereto, and various other suitable materials may constitute the second semiconductor layer 13.

[0060] refer to Figure 2B In an exemplary embodiment of the present disclosure, the light emitting element LD may include an electrode layer 16 on the second semiconductor layer 13. For example, the light emitting element LD may include a stacked structure in which a first semiconductor layer 11, an active layer 12, a second semiconductor layer 13, and an electrode layer 16 are stacked in this order. In the exemplary embodiment described below, the stacked structure including the first semiconductor layer 11, the active layer 12, the second semiconductor layer 13, and the electrode layer 16 will be referred to as a light emitting stacked pattern.

[0061] The light emitting stack pattern may have a cylindrical shape, and the light emitting element LD may also have a cylindrical shape corresponding to the light emitting stack pattern. In addition, the first semiconductor layer 11, the active layer 12, the second semiconductor layer 13 and the electrode layer 16 included in the light emitting stack pattern may have a cylindrical shape.

[0062] The first semiconductor layer 11 may be located at one end of the light emitting element LD, and the electrode layer 16 may be located at the other end of the light emitting element LD. The light emitting element LD may include a lower surface of the first semiconductor layer 11 and an upper surface of the electrode layer 16 located at both ends of the light emitting element LD and exposed to the outside (e.g., exposed to the outside of the light emitting element LD). The lower surface of the first semiconductor layer 11 and the upper surface of the electrode layer 16 may be surfaces electrically coupled by contacting an external conductive material.

[0063] When the light emitting element LD has a cylindrical shape, the first semiconductor layer 11 may be at a lower portion of the cylinder, and the electrode layer 16 may be at an upper portion of the cylinder. When the light emitting element LD has a cylindrical shape, each of a lower surface of the first semiconductor layer 11 and an upper surface of the electrode layer 16 may be formed in a circular shape (e.g., a substantially circular shape).

[0064] According to an exemplary embodiment, when the light emitting element LD has an elliptical cylinder shape, each of the lower surface of the first semiconductor layer 11 and the upper surface of the electrode layer 16 may be formed in an elliptical shape (e.g., a substantially elliptical shape). In addition, according to another exemplary embodiment, when the light emitting element LD has a polygonal cylinder shape, each of the lower surface of the first semiconductor layer 11 and the upper surface of the electrode layer 16 may be formed in a polygonal shape (e.g., a substantially polygonal shape).

[0065] The electrode layer 16 may be an ohmic contact electrode electrically coupled to the second semiconductor layer 13, but is not limited thereto. According to an exemplary embodiment, the electrode layer 16 may be a Schottky contact electrode (e.g., an electrode formed by a junction of a semiconductor and a metal). The electrode layer 16 may include a metal and / or a metal oxide. For example, the electrode layer 16 may include Cr, Ti, Al, Au, Ni, ITO, IZO, ITZO, an oxide thereof, and / or an alloy thereof (alone or in combination). In addition, the electrode layer 16 may be substantially transparent or translucent. Therefore, the light generated in the active layer 12 of the light emitting element LD may be emitted to the outside of the light emitting element LD (e.g., to the outside of the light emitting element LD) through the electrode layer 16.

[0066] like Figures 1 to 2BAs shown in FIG. 1 , the light emitting element LD may further include an insulating film 14 provided on the surface of the light emitting stack pattern. The insulating film 14 may include a transparent insulating material. For example, the insulating film 14 may include a material selected from SiO 2 、Si 3 N 4 、Al 2 O 3 and TiO 2 At least one insulating material in the group consisting of, but not limited thereto, and may include various other suitable materials having insulating properties (eg, being electrically insulating).

[0067] The insulating film 14 can prevent or reduce an electrical short circuit (e.g., a short circuit) that may occur when the active layer 12 contacts a conductive material other than the first semiconductor layer 11 and the second semiconductor layer 13. In addition, the insulating film 14 can minimize or reduce surface defects of the light emitting element LD to improve the service life and efficiency of the light emitting element LD. In addition, when a plurality of light emitting elements LD are positioned close to each other, the insulating film 14 can prevent or reduce an undesirable electrical short circuit (e.g., a short circuit) that may occur between the light emitting elements LD.

[0068] The insulating film 14 can be formed on the surface of the light emitting stack pattern to surround at least the peripheral (e.g., perimeter) surface of the active layer 12, and can further surround a region of the first semiconductor layer 11 and the second semiconductor layer 13 and the peripheral (e.g., perimeter) surface of the electrode layer 16.

[0069] In the exemplary embodiment of the present disclosure, the insulating film 14 may expose at least one of both end portions of the light emitting element LD having different polarities. Figures 1 to 2B , the insulating film 14 is shown as surrounding all peripheral (e.g., perimeter) surfaces of the first semiconductor layer 11 and the second semiconductor layer 13, but the insulating film 14 may be exposed to the outside of the light emitting element LD without covering a portion of the first semiconductor layer 11 in the first semiconductor layer 11 and the second semiconductor layer 13 located at both ends of the light emitting element LD in the length direction.

[0070] The insulating film 14 may include an inner surface directly contacting the surface of the light emitting stack pattern and an outer surface facing the inner surface. In addition, the insulating film 14 may include an upper surface and a lower surface parallel (e.g., substantially parallel) to a direction (e.g., a horizontal direction) that crosses the length direction of the light emitting element. In some embodiments, the surface of the insulating film 14 may include an outer surface, an upper surface, and a lower surface.

[0071] refer to Figures 1 to 2B, in an exemplary embodiment of the present disclosure, the polymer film 15 may be on at least a portion of the surface of the insulating film 14. Providing the polymer film 15 on the surface of the insulating film 14 of the light-emitting element LD improves the dispersibility and / or solubility of the light-emitting element LD in the composition described herein below. In addition, because the light-emitting element LD having the polymer film 15 has excellent dispersion stability in the composition, the light-emitting element LD can be uniformly dispersed in the composition even after a long time without sinking (e.g., precipitating) in the composition.

[0072] exist Figures 1 to 2B In FIG. 1 , the polymer film 15 is shown on the outer surface of the insulating film 14 , but the position of the polymer film 15 is not limited thereto. For example, the polymer film 15 may be on the outer surface, the upper surface, and the lower surface of the insulating film 14 .

[0073] In an exemplary embodiment of the present disclosure, Figure 3 , the polymer film 15 may include a polymer chain PC. In this case, the polymer chain PC may be provided on the insulating film 14. For example, the polymer film 15 may include a linker compound, and the linker compound may connect the surface of the insulating film 14 to the end of the polymer chain PC. In some embodiments, the polymer chain PC may be introduced to (e.g., bonded to) the surface of the insulating film 14 through the linker compound.

[0074] The linker compound may include a functional group that can be bonded to the surface of the insulating film 14 and the end of the polymer chain PC. For example, the linker compound may include C 1 -C 20 Alkylene group, composed of -(CH 2 ) n -NR 1 -(herein, n is an integer of 1 or greater, and R 1 is hydrogen or C 1 -C 20 Alkyl group) represented by alkylamine group, C 1 -C 20 Ester group, C 1 -C 20 Ketone group, C 1 -C 20 A compound having at least one of an amide group and a siloxane group. However, the type (e.g., composition) of the linker compound is not limited thereto, and the linker compound may be selected according to the type (e.g., composition) of the material constituting the insulating film 14 and the type (e.g., composition) of the monomer used to polymerize the polymer chain PC (e.g., the monomer that is polymerized to form the polymer chain PC).

[0075] In an exemplary embodiment of the present disclosure, a compound containing a siloxane group may be used as a linker compound. For example, any one selected from the following Compound 1, Compound 2, and Compound 3 may be used as a linker compound containing a siloxane group.

[0076] Compound 1

[0077]

[0078] Compound 2

[0079]

[0080] Compound 3

[0081]

[0082] Hereinafter, embodiments of the present disclosure will be described according to an exemplary embodiment using a compound including a siloxane group as a linker compound.

[0083] The linker compound can be introduced into (e.g., bonded to) the surface of the insulating film 14 by the surface treatment of the insulating film 14. For example, in Compounds 1 to 3, the methyl group -CH bonded to the oxygen of silicon bonded to the siloxane group (e.g., the oxygen of the siloxane bond (e.g., Si-O)) can be introduced into (e.g., bonded to) the surface of the insulating film 14 by the surface treatment of the insulating film 14. 3 Can be released, and the oxygen atom is bonded to the surface of the insulating film 14. In Compounds 1 to 3, the carbon atom bonded to the halogen atom (e.g., Br and I) is electrophilic, the halogen atom can be released from the electrophilic carbon atom, and the end of the polymer chain PC is bonded to the released position (e.g., bonded to the carbon atom previously bonded to the halogen atom).

[0084] Therefore, if Figure 3 , one end of a linker compound (eg, Compound 1) may be bonded to the surface of the insulating film 14, and the other end of the linker compound may be bonded to the polymer chain PC.

[0085] The method of bonding the polymer chain PC to the linker compound may be a method using any suitable polymerization reaction or coupling reaction commonly used in the art. For example, the polymer chain PC may be grown by bonding a monomer for polymerizing the polymer chain PC to the end of the linker compound and then performing a polymerization reaction of the monomer at the end of the linker compound (for example, the polymer chain PC may be grown by polymerizing the monomer from the end of the linker compound). In addition, the polymer chain PC may be bonded to the linker compound by performing a coupling reaction between the end of the polymer chain PC formed by polymerizing the monomer and the end of the linker compound (for example, the polymer chain PC may be polymerized and then bonded to the linker compound by a coupling reaction). However, the method of bonding the polymer chain PC to the linker compound is not limited thereto.

[0086] In an exemplary embodiment of the present disclosure, the polymer chain PC may include aliphatic hydrocarbon repeating units in the main chain. For example, the main chain of the polymer chain PC may include polymerization units (e.g., repeating units) derived from aliphatic hydrocarbon monomers. The aliphatic hydrocarbon repeating units may form the backbone of the polymer chain PC. In the present disclosure, the aliphatic hydrocarbon repeating units may be included in the polymer chain PC such that no aromatic groups are present in the repeating units of the main chain of the polymer chain PC. In addition, the aliphatic hydrocarbon repeating units may include polar substituents and / or non-polar substituents.

[0087] The main chain of the polymer chain PC including the aliphatic hydrocarbon repeating unit may have a carbon number of 10 or more (e.g., all the aliphatic hydrocarbon repeating units may together contain 10 or more carbon atoms). For example, the main chain of the polymer chain PC composed of the aliphatic hydrocarbon repeating unit may contain 10 carbons or more. By providing the surface of the insulating film 14 of the light-emitting element LD with a polymer chain PC including a main chain having a carbon number of 10 or more, the solubility and / or dispersibility of the light-emitting element LD in a solvent can be increased.

[0088] In an exemplary embodiment of the present disclosure, selected from C 1 -C 20 Alkyl group or C 3 -C 20 Alkyl group, C 2 -C 20 Ether group, C 2 -C 20 Ester group, C 1 -C 20 Amine group, C 2 -C 20 Amide group, hydroxyl group, C 1 -C 20At least one substituent of an alkoxy group, a urethane group, a urea group, an imide group, an acryl group, and a thiol group may be bonded to the main chain of the polymer chain.

[0089] In some embodiments, the aliphatic hydrocarbon repeating unit may include, C 1 -C 20 Alkyl group or C 3 -C 20 Alkyl group, C 2 -C 20 Ether group, C 2 -C 20 Ester group, C 1 -C 20 Amine group, C 2 -C 20 Amide group, hydroxyl group, C 1 -C 20 At least one substituent selected from the group consisting of an alkoxy group, a urethane group, a urea group, an imide group, an acryl group, and a thiol group.

[0090] As described herein below, the type (e.g., composition) of the substituents contained in the aliphatic hydrocarbon repeating unit can be set according to the type (e.g., composition) of the solvent contained in the composition. In some embodiments, the type (e.g., composition) of the solvent contained in the composition can be set or determined according to the type (e.g., composition) of the substituents contained in the aliphatic hydrocarbon repeating unit. For example, considering the type (e.g., composition) of the substituents contained in the main chain of the polymer chain PC and the type (e.g., composition) of the functional groups contained in the solvent, a light-emitting element having excellent dispersibility and / or solubility in the composition can be achieved.

[0091] In an exemplary embodiment of the present disclosure, the polymer chain PC may include a repeating unit containing an aromatic ring in the main chain. For example, the main chain of the polymer chain PC may include a repeating unit derived from a monomer containing an aromatic ring. The repeating unit containing an aromatic ring may form the backbone of the main chain of the polymer chain PC. In addition, the repeating unit containing an aromatic ring may contain a polar substituent and / or a non-polar substituent.

[0092] The main chain of the polymer chain PC including repeating units containing aromatic rings may contain 10 aromatic rings or more than 10 aromatic rings (for example, all repeating units containing aromatic rings may contain 10 or more aromatic rings together). In addition, the main chain of the polymer chain PC including repeating units containing aromatic rings may have a carbon number of 10 or more than 10 (for example, may contain 10 or more carbon atoms). In this case, the carbon number of the main chain of the polymer chain PC may refer to the number of carbon atoms contained in the main chain other than the carbon contained in the aromatic ring. For example, the main chain of the polymer chain PC including repeating units containing aromatic rings may contain 10 or more non-aromatic carbon atoms, wherein the non-aromatic carbon atoms may be, for example, bridging carbon atoms that connect the repeating units to each other.

[0093] By providing a polymer chain PC including a main chain having an aromatic ring number of 10 or greater (e.g., containing 10 or more aromatic rings) and a carbon number of 10 or greater (e.g., containing 10 or more non-aromatic carbon atoms) on the surface of the insulating film 14 of the light-emitting element LD, the dispersibility and / or solubility of the light-emitting element LD in the solvent can be further improved.

[0094] In an exemplary embodiment of the present disclosure, the repeating unit including an aromatic ring may include hydrogen, C 1 -C 20 Alkyl group or C 3 -C 20 Alkyl group, C 2 -C 20 Ether group, C 2 -C 20 Ester group, C 1 -C 20 Amine group, C 2 -C 20 Amide group, hydroxyl group, C 1 -C 20 At least one substituent selected from the group consisting of an alkoxy group, a urethane group, a urea group, an imide group, an acryl group, and a thiol group.

[0095] In an exemplary embodiment of the present disclosure, the molecular weight of the polymer chain PC may be 2,000 g / mol or more and 1,000,000 g / mol or less (e.g., 2,000 Daltons or more to 1,000,000 Daltons or less). For example, the molecular weight of the polymer chain PC may be 3,000 g / mol (or Daltons) or more and 900,000 g / mol (or Daltons) or less, 5,000 g / mol (or Daltons) or more and 800,000 g / mol (or Daltons) or less, 10,000 g / mol (or Daltons) or more and 600,000 g / mol (or Daltons) or less, 50,000 g / mol (or Daltons) or more and 500,000 g / mol (or Daltons) or less, or 100,000 g / mol (or Daltons) or more and 350,000 g / mol (or Daltons) or less.

[0096] For example, the molecular weight of the polymer chain PC may be 2,000 g / mol (or Dalton) or more and 10,000 g / mol (or Dalton) or less, 15,000 g / mol (or Dalton) or more and 50,000 g / mol (or Dalton) or less, 100,000 g / mol (or Dalton) or more and 500,000 g / mol (or Dalton) or less, or 600,000 g / mol (or Dalton) or more and 1,000,000 g / mol (or Dalton) or less. The molecular weight of the polymer chain PC may be controlled by adjusting the polymerization reaction of the monomers to obtain a desired molecular weight.

[0097] By adjusting the molecular weight of the polymer chain PC within the above-described range, a light-emitting element LD having excellent dispersibility and / or solubility in a solvent can be realized. Therefore, the light-emitting element LD can be uniformly dispersed in the solvent.

[0098] In an exemplary embodiment of the present disclosure, the thickness of the polymer film 15 may be 10 nm or more and 100 nm or less. For example, the thickness of the polymer film 15 may be 20 nm or more and 80 nm or less, 30 nm or more and 70 nm or less, or 35 nm or more and 50 nm or less. In some embodiments, the thickness of the polymer film 15 may be 10 nm or more and 25 nm or less, 30 nm or more and 50 nm or less, or 75 nm or more and 100 nm or less.

[0099] When the thickness of the polymer film 15 is within the range described above, the dispersibility and / or solubility of the light-emitting element LD in the solvent can be further improved. In addition, by adjusting the thickness of the polymer film 15 within the range described above, the defects on the surface of the light-emitting element LD can be minimized or reduced to improve the service life and efficiency of the light-emitting element LD.

[0100] In an exemplary embodiment of the present disclosure, the polymer chain PC may include a repeating unit represented by the following Chemical Formula 1.

[0101] Chemical formula 1

[0102]

[0103] In Chemical Formula 1, R 2 and R 2 Each of ' can independently be hydrogen, C 1 -C 20 Alkyl group or C 3 -C 20 Alkyl group, C 2 -C 20 Ether group, C 2 -C 20 Ester group, C 1 -C 20 Amine group, C 2 -C 20 Amide group, hydroxyl group, C 1 -C 20 an alkoxy group, a urethane group, a urea group, an imide group, an acryl group or a thiol group.

[0104] In some embodiments, in Chemical Formula 1, R 2 and R 2 Each of ' can independently be hydrogen, C 1 -C 10 Alkyl group or C 3 -C 10 Alkyl group, C 2 -C 10 Ether group, C 2 -C 10 Ester group, hydroxyl group, C 1 -C 10 an alkoxy group or an acryloyl group.

[0105] In an exemplary embodiment of the present disclosure, the polymer chain PC may include a repeating unit represented by the following Chemical Formula 2.

[0106] Chemical formula 2

[0107]

[0108] In Formula 2, each of R3 and R3′ can independently be hydrogen, C 1 -C 10 Alkyl group or C 3 -C 20Alkyl group, C 2 -C 20 Ether group, C 2 -C 20 Ester group, C 1 -C 20 Amine group, C 2 -C 20 Amide group, hydroxyl group, C 1 -C 20 an alkoxy group, a urethane group, a urea group, an imide group, an acryl group or a thiol group.

[0109] In some embodiments, in Formula 2, R 3 and R 3 Each of ' can independently be hydrogen, C 1 -C 5 Alkyl group or C 3 -C 5 Alkyl group, C 2 -C 5 Ether group, C 2 -C 5 Ester group, hydroxyl group, C 1 -C 5 an alkoxy group or an acryloyl group.

[0110] In an exemplary embodiment of the present disclosure, the polymer chain PC may include a repeating unit represented by the following Chemical Formula 2-1.

[0111] Chemical formula 2-1

[0112]

[0113] In an exemplary embodiment of the present disclosure, the polymer chain PC may include a repeating unit represented by the following Chemical Formula 3.

[0114] Chemical formula 3

[0115]

[0116] In chemical formula 3, R 4 and R 4 Each of ' can independently be hydrogen, C 1 -C 20 Alkyl group or C 3 -C 20 Alkyl group, C 2 -C 20 Ether group, C 2 -C 20 Ester group, C 1 -C 20 Amine group, C2 -C 20 Amide group, hydroxyl group, C 1 -C 20 an alkoxy group, a urethane group, a urea group, an imide group, an acryl group or a thiol group.

[0117] In some embodiments, in Formula 3, R 4 and R 4 Each of ' can be independently C 1 -C 10 Alkyl group, C 2 -C 10 Ether group, C 2 -C 10 Ester group, hydroxyl group, C 1 -C 10 an alkoxy group or an acryloyl group.

[0118] In an exemplary embodiment of the present disclosure, the polymer chain PC may include a repeating unit represented by the following Chemical Formula 3-1.

[0119] Chemical formula 3-1

[0120]

[0121] According to the exemplary embodiment of the present disclosure, as described above, by introducing a polymer chain PC containing at least one of the repeating units represented by Chemical Formulae 1 to 3 into the surface of the insulating film 14 of the light-emitting element LD, a light-emitting element LD having excellent dispersibility and / or solubility in a solvent can be effectively realized.

[0122] The light emitting element LD described above can be used as a light source of various suitable display devices.

[0123] Figures 4A to 4K are cross-sectional views sequentially showing an embodiment of a method for manufacturing a light emitting element.

[0124] refer to Figures 1 to 2B and Figure 4A , a substrate 1 configured to support a light emitting element LD is provided.

[0125] The substrate 1 may be a GaAs, GaP, InP and / or sapphire substrate. The substrate 1 may be a wafer for epitaxial growth. The substrate 1 may include a ZnO substrate having a GaAs layer on its surface. In addition, the substrate 1 may include a Ge substrate having a GaAs layer on its surface, and / or a Si substrate having a GaAs layer on a Si wafer and a buffer layer interposed therebetween.

[0126] The substrate 1 may include any suitable commercially available single crystal substrate manufactured by any suitable method generally available in the art. If the selection ratio for manufacturing the light emitting element LD can be satisfied and epitaxial growth can be smoothly performed, the material of the substrate 1 is not limited thereto. In the following exemplary embodiments, the substrate 1 will be described as a sapphire substrate, but the present disclosure is not limited thereto.

[0127] The epitaxial growth surface of the substrate 1 may be smooth. The substrate 1 may be changed in size and diameter according to the product to which the substrate 1 is applied, and may be manufactured in a form capable of reducing warping of the stacked structure due to epitaxial growth. The shape of the substrate 1 is not limited to a circular shape, but may be, for example, a polygonal shape, such as a rectangular shape, etc.

[0128] refer to Figures 1 to 2B , Figure 4B , a sacrificial layer 3 is formed on the substrate 1. The sacrificial layer 3 may be formed on the substrate 1 by using a metal organic chemical vapor deposition (MOCVD) method, a molecular beam epitaxy (MBE) method, a vapor phase epitaxy (VPE) method, a liquid phase epitaxy (LPE) method, or the like.

[0129] The substrate 1 and the sacrificial layer 3 may be in contact with each other (eg, in direct contact or physical contact). In the process of manufacturing the light emitting element LD, the sacrificial layer 3 may be between the light emitting element LD and the substrate 1 to physically separate the light emitting element LD from the substrate 1 .

[0130] The sacrificial layer 3 may have various suitable structural shapes and may have a single-layer structure or a multi-layer structure. The sacrificial layer 3 may be formed of GaAs, AlAs and / or AlGaAs. Meanwhile, according to the manufacturing method of the light emitting element LD, the step of forming the sacrificial layer 3 on the substrate 1 may be omitted. In this case, the first semiconductor layer 11 may be formed on the substrate 1.

[0131] refer to Figures 1 to 2B and Figure 4C , a first semiconductor layer 11 is formed on the sacrificial layer 3. Similar to the sacrificial layer 3, the first semiconductor layer 11 may be formed by epitaxial growth, and may be formed by using an MOCVD method, an MBE method, a VPE method, an LPE method, etc. According to an exemplary embodiment, an additional semiconductor layer for improving crystallinity, such as a buffer layer and a non-doped semiconductor layer, may be further formed between the first semiconductor layer 11 and the sacrificial layer 3.

[0132] The first semiconductor layer 11 may include a semiconductor material composed of Group III (e.g., Ga, Al, In) to Group V (e.g., P, As), and may include a semiconductor layer doped with a first conductive dopant (e.g., Si, Ge, Sn, etc.). For example, the first semiconductor layer 11 may include at least one semiconductor material of GaP, GaAs, GaInP, and AlGaInP doped with Si. In some embodiments, the first semiconductor layer 11 may include at least one n-type semiconductor layer. The material constituting the first semiconductor layer 11 is not limited thereto, and various suitable materials may constitute the first semiconductor layer 11.

[0133] refer to Figures 1 to 2B and Figure 4D , an active layer 12 is formed on the semiconductor layer 11. The active layer 12 may be a region where electrons and holes are recombined, may be converted to a lower energy level when the electrons and holes are recombined, and may emit light having a corresponding wavelength.

[0134] The active layer 12 may be formed on the first semiconductor layer 11 and may have a single or multiple quantum well structure. The position of the active layer 12 may be changed in various suitable ways according to the type (eg, composition, shape, etc.) of the light emitting element LD.

[0135] The active layer 12 may include at least one material of GaInP, AlGaInP, GaAs, AlGaAs, InGaAs, InGaAsP, InP, and InAs. The active layer 12 may emit light having a wavelength of 400nm to 900nm. The active layer 12 may use a double heterostructure. According to an exemplary embodiment, a cladding layer doped with a conductive dopant may be further formed on the upper surface and / or the lower surface of the active layer 12.

[0136] refer to Figures 1 to 2B and Figure 4E , a second semiconductor layer 13 is formed on the active layer 12. The second semiconductor layer 13 may include a semiconductor layer of a different type (e.g., p-type or n-type) from the first semiconductor layer 11. The second semiconductor layer 13 may include a semiconductor material composed of Group III (e.g., Ga, Al, In) to Group V (e.g., P, As), and may include a semiconductor layer doped with a second conductive dopant (e.g., Mg, etc.). For example, the second semiconductor layer 13 may include at least one semiconductor material of GaP, GaAs, GaInP, and AlGaInP doped with Mg. In some embodiments, the second semiconductor layer 13 may include a p-type semiconductor layer. The material constituting the second semiconductor layer 13 is not limited thereto, and various suitable materials may constitute the second semiconductor layer 13.

[0137] refer to Figures 1 to 2B and Figure 4F , an electrode layer 16 is formed on the second semiconductor layer 13. The electrode layer 16 may include a metal or a metal oxide. For example, the electrode layer 16 may include Cr, Ti, Al, Au, Ni, ITO, IZO, ITZO, and oxides or alloys thereof (alone or in combination). In an exemplary embodiment of the present disclosure, the electrode layer 16 may minimize or reduce the loss of light generated in the active layer 12 and emitted from the light emitting element LD, and may be made of a transparent metal oxide (e.g., indium tin oxide (ITO)) to improve the current spreading effect on the second semiconductor layer 13.

[0138] As described above, the first semiconductor layer 11 , the active layer 12 , the second semiconductor layer 13 , and the electrode layer 16 sequentially stacked on the substrate 1 constitute a light emitting stack.

[0139] refer to Figures 1 to 2B and Figure 4G The light emitting stack may be etched in a vertical direction to form a light emitting stack pattern 10. After providing a mask on the light emitting stack, a first etching process is performed to pattern the light emitting stack at nanometer or micrometer intervals, thereby forming a plurality of light emitting stack patterns 10.

[0140] In an exemplary embodiment of the present disclosure, the mask may include a plurality of openings, and one region of the light emitting stack corresponding to the opening is etched to form a groove portion that exposes one region of the first semiconductor layer 11 to the outside. Figure 4G , a region of the first semiconductor layer 11 facing one surface of the substrate 1 may be exposed to the outside.

[0141] An area of ​​the light emitting stack corresponding to the opening of the mask may be etched, and other areas of the light emitting stack not corresponding to the opening of the mask may not be etched. According to an exemplary embodiment, the opposite of the above is also possible. For example, an area of ​​the light emitting stack corresponding to the opening of the mask may not be etched, and an area of ​​the light emitting stack not corresponding to the opening of the mask may be etched.

[0142] The first etching method may be dry etching, such as reactive ion etching (RIE), reactive ion beam etching (RIBE), or inductively coupled plasma reactive ion etching (ICP-RIE). Unlike wet etching, dry etching is suitable for forming the light emitting stack pattern 10 because single-side etching is possible.

[0143] In an exemplary embodiment of the present disclosure, each of the light emitting stack patterns 10 may have a size of a nanometer scale or a micrometer scale.

[0144] After the first etching process is performed, the residue remaining on the light emitting stack pattern 10 can be removed by an existing wet etching method or a dry etching method, but is not limited thereto, and the residue can be removed by an existing removal method. Here, the residue may include an etching mask required by a mask process, an insulating material, etc.

[0145] refer to Figures 1 to 2B and Figure 4H The insulating film 14 is formed on the light emitting stack pattern 10 and a region of the first semiconductor layer 11 exposed to the outside. For example, the insulating film 14 may cover the first semiconductor layer 11, the active layer 12, the second semiconductor layer 13, and the electrode layer 16 so that the first semiconductor layer 11, the active layer 12, the second semiconductor layer 13, and the electrode layer 16 may not be exposed to the outside.

[0146] The method of forming the insulating film 14 may use a method of applying an insulating material to the light emitting stack pattern 10 attached to the substrate 1, but is not limited thereto. The material that can be used as the insulating film 14 may include a material selected from SiO 2 、Si 3 N 4 、Al 2 O 3 and TiO 2 At least one insulating material selected from the group consisting of, but not limited to, Al 2 O 3 The film can be formed by atomic layer deposition (ALD) or by supplying a pulsed supply of trimethylaluminum (TMA) and H 2 O is used as a source and is formed using chemical adsorption and desorption. The thickness of the insulating film 14 may be 30 nm to 150 nm, but is not limited thereto.

[0147] refer to Figures 1 to 2B and Fig. 4I , a portion of the insulating film 14 may be removed by performing a secondary etching process. In the secondary etching process, a portion of the insulating film 14 surrounding the electrode layer 16 and a portion of the insulating film 14 covering a region of the first semiconductor layer 11 facing one surface of the substrate 1 may be removed. Therefore, the insulating film 14 may be provided on the outer surface of the light emitting stack pattern 10. For example, the light emitting stack pattern 10 surrounded by the insulating film 14 may be formed on the substrate 1 by performing a secondary etching process.

[0148] refer to Figures 1 to 2B and Figure 4J , the light emitting stack pattern 10 surrounded by the insulating film 14 may be separated from the substrate 1 by using a chemical lift-off (CLO) method. Chemical lift-off may be performed at an interface between the first semiconductor layer 11 of the light emitting stack pattern 10 and the first semiconductor layer 11 formed on the sacrificial layer 3. Figure 4J, when the chemical lift-off is performed, a portion of the first semiconductor layer 11 that is not included in the light emitting stack pattern 10 remains on the sacrificial layer 3 .

[0149] The light emitting stack pattern 10 separated from the substrate 1 may be in a state in which the electrode layer 16 , the surface of the insulating film 14 , and the lower surface of the first semiconductor layer 11 are exposed to the outside.

[0150] refer to Figures 1 to 2B and Figure 4K , the light emitting element LD may be manufactured by forming a polymer film 15 on the surface of the insulating film 14 of the light emitting stack pattern 10. The polymer film 15 may be formed on at least a portion of the surface of the insulating film 14, and Figure 4K An exemplary embodiment is shown in which the polymer film 15 is formed on all of the outer surface, the upper surface, and the lower surface of the insulating film 14 .

[0151] In an exemplary embodiment of the present disclosure, a linker compound may be introduced to the surface of the insulating film 14 in the step of forming the polymer film 15. The linker compound may be Figures 1 to 3 As described above, by the surface treatment of the insulating film 14, one end of the linker compound can be bonded to the surface of the insulating film 14.

[0152] In an exemplary embodiment of the present disclosure, the step of forming the polymer film 15 may introduce the polymer chain PC to the surface of the insulating film 14 through the linker compound. For example, an end of the polymer chain PC may be bonded to the other end of the linker compound. Figure 3 As shown in , the linker compound can connect the polymer chain PC to the surface of the insulating film 14.

[0153] The method of bonding the polymer chain PC to the linker compound may be a method using a polymerization reaction or a coupling reaction used in the prior art. For example, the polymer chain PC may be grown by bonding a monomer for polymerizing the polymer chain PC to the end of the linker compound and then performing a polymerization reaction of the monomer at the end of the linker compound. In addition, the polymer chain PC may be bonded to the linker compound by performing a coupling reaction between the end of the polymer chain PC formed by polymerizing the monomer and the end of the linker compound. However, the method of bonding the polymer chain PC to the linker compound is not limited thereto.

[0154] Figure 5 is a diagram illustrating a composition including a light emitting element according to an exemplary embodiment of the present disclosure.

[0155] In the exemplary embodiment of the present disclosure, the configuration not mentioned in the exemplary embodiment described above will be mainly described to avoid repeated description. The parts not specifically described in this exemplary embodiment of the present disclosure can be understood by referring to one of the exemplary embodiments described above herein, and it is noted that the same reference numerals represent the same constituent elements, and similar reference numerals represent similar constituent elements.

[0156] refer to Figures 1 to 3 and Figure 5 , the composition C may include a solvent S and a light emitting element LD. The composition C may be an ink composition for providing the light emitting element LD in a process of manufacturing a display device.

[0157] In an exemplary embodiment of the present disclosure, the solvent S may include at least one of the following: an alkyl solvent containing an alkyl group (e.g., an alkyl solvent containing an alkyl group-containing compound), an ether solvent containing an ether group (e.g., an ether solvent containing an ether group-containing compound), an ester solvent containing an ester group (e.g., an ester solvent containing an ester group-containing compound), an amine solvent containing an amine group (e.g., an amine solvent containing an amine group-containing compound), an amide solvent containing an amide group (e.g., an amide solvent containing an amide group-containing compound), an alcohol solvent containing an alcohol group (e.g., an alcohol solvent containing an alcohol group). The invention also includes an alcohol solvent containing an alcohol group-containing compound), a carbamate solvent containing a carbamate group (e.g., a carbamate solvent containing a carbamate group-containing compound), a urea solvent containing a urea group (e.g., a urea solvent containing a urea group-containing compound), an imide solvent containing an imide group (e.g., an imide solvent containing an imide group-containing compound), an acryl solvent containing an acryl group (e.g., an acryl solvent containing an acryl group-containing compound), and a thiol solvent containing a thiol group (e.g., a thiol solvent containing a thiol group-containing compound).

[0158] The type (e.g., composition) of the repeating unit constituting the main chain of the polymer chain PC and the type (e.g., composition) of the substituents contained in the repeating unit may be set according to the type (e.g., composition) of the solvent S contained in the composition C. In some embodiments, the type (e.g., composition) of the solvent S contained in the composition C may be set or determined according to the type (e.g., composition) of the repeating unit constituting the main chain of the polymer chain PC and the type (e.g., composition) of the substituents contained in the repeating unit.

[0159] For example, considering the type (e.g., composition) of functional groups contained in the repeating units contained in the main chain of the polymer chain PC, substituents, and solvents, a composition C including a light-emitting element LD having excellent dispersibility and / or solubility in a solvent S can be achieved.

[0160] By providing the light-emitting element LD with a polymer film 15 including a polymer chain PC having excellent solubility and / or dispersibility in the solvent S, the light-emitting element LD can be uniformly dispersed in the composition C, and even after a long time, the light-emitting element LD may not precipitate or aggregate in the solvent. By using the composition C, a set number or a predetermined number of light-emitting elements LD can be provided per pixel of a display device.

[0161] In the exemplary embodiment of the present disclosure, the polymer chain PC may be provided in the form of an organic salt and / or an inorganic salt. Since the polymer chain PC is provided in the form of an organic salt and / or an inorganic salt in the solvent S, the dispersibility and / or solubility of the light emitting element LD may be further improved.

[0162] The above detailed description illustrates and explains the embodiments of the present disclosure. In addition, the above detailed description only illustrates the exemplary embodiments of the present disclosure, and the subject matter of the present disclosure can be used in various other combinations, changes and environments as described above, and the scope of the subject matter disclosed herein can be changed or modified within the scope of equivalents and / or technology or knowledge in the art. Therefore, the above detailed description is not intended to limit the present disclosure to the disclosed embodiments. In addition, the attached claims should be interpreted as including other embodiments equivalent to the claimed embodiments.

Claims

1. Light-emitting element, including: a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; an insulating film surrounding an outer peripheral surface of each of the first semiconductor layer, the active layer, and the second semiconductor layer; as well as a polymer film comprising polymer chains and on at least a portion of the surface of the insulating film, The polymer chain includes at least one of the repeating units represented by Chemical Formula 1 to Chemical Formula 3: Chemical formula 1 Wherein, in Chemical Formula 1, each of R2 and R2' is independently hydrogen, C1-C 20 Alkyl groups, C2-C 20 Ether group, C2-C 20 Ester group, C1-C 20 Amine group, C2-C 20 Amide group, hydroxyl group, C1-C 20 an alkoxy group, a carbamate group, a urea group, an imide group, an acryloyl group or a thiol group, Chemical formula 2 Wherein, in Chemical Formula 2, each of R3 and R3' is independently hydrogen, C1-C 20 Alkyl groups, C2-C 20 Ether group, C2-C 20 Ester group, C1-C 20 Amine group, C2-C 20 Amide group, hydroxyl group, C1-C 20 an alkoxy group, a carbamate group, a urea group, an imide group, an acryloyl group or a thiol group, Chemical formula 3 Wherein, in Chemical Formula 3, each of R4 and R4' is independently hydrogen, C1-C 20 Alkyl groups, C2-C 20 Ether group, C2-C 20 Ester group, C1-C 20 Amine group, C2-C 20 Amide group, hydroxyl group, C1-C 20 an alkoxy group, a urethane group, a urea group, an imide group, an acryl group or a thiol group. 2 . The light emitting element according to claim 1 , further comprising an electrode layer on the second semiconductor layer. 3 . The light-emitting element according to claim 1 , wherein the polymer film further comprises a linker compound connecting the surface of the insulating film and an end of the polymer chain.

4. The light-emitting element according to claim 3, wherein the linker compound comprises a compound selected from the group consisting of C1-C 20 Alkylene group; composed of -(CH2) n -NR1-, wherein n is an integer of 1 or greater, and R1 is hydrogen or C1-C 20 Alkyl group; C1-C 20 Ester group; C1-C 20 Ketone group; C1-C 20 A compound comprising at least one of an amide group; and a siloxane group. The light-emitting element according to claim 1 , wherein the polymer chain comprises an aliphatic hydrocarbon repeating unit in a main chain. 6 . The light-emitting element according to claim 5 , wherein the main chain of the polymer chain has a carbon number of 10 or more. 7 . The light-emitting element according to claim 1 , wherein the polymer chain comprises a repeating unit comprising an aromatic ring in a main chain. 8 . The light-emitting element according to claim 7 , wherein the main chain of the polymer chain includes 10 or more aromatic rings.

9. The light-emitting element according to claim 1, wherein the 20 Alkyl groups, C2-C 20 Ether group, C2-C 20 Ester group, C1-C 20 Amine group, C2-C 20 Amide group, hydroxyl group, C1-C 20 At least one substituent of an alkoxy group, a urethane group, a urea group, an imide group, an acryl group, and a thiol group is bonded to the main chain of the polymer chain. 10 . The light-emitting element according to claim 1 , wherein a molecular weight of the polymer chain is 2,000 g / mol or more and 1,000,000 g / mol or less. The light-emitting element according to claim 1 , wherein a thickness of the polymer film is greater than or equal to 10 nm and less than or equal to 100 nm.

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