Gallium nitride-based semiconductor laser

Abstract

The gallium nitride-based semiconductor laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. According to the semiconductor laser element, the multi-vacancy electron phonon regulation and control layers of a multi-layer structure are arranged in the semiconductor laser element, and the electron affinity distribution characteristic and the polarization optical phonon energy distribution characteristic of each multi-vacancy electron phonon regulation and control layer are limited, so that single-vacancy, vacancy group and multi-vacancy regulation and control electron phonon structures are formed; the electron phonons are localized between the lower limiting layer and the lower waveguide layer, stokes frequency shift formed by photon energy difference between pump light and oscillation light is reduced, phonon vibration and phonon transport heat loss are reduced, the heat dissipation performance of a laser element is improved, thermal mismatch between epitaxial layers is improved, the thermal lens effect and stress birefringence effect of the laser are inhibited, and the laser efficiency is improved. The problems of laser beam distortion and depolarization are improved, and the laser beam quality factor is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor optoelectronic devices, and particularly to a gallium nitride-based semiconductor laser. Background Art

[0002] Lasers are widely used in the fields of laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of lasers and diverse classification methods, mainly including solid-state, gas, liquid, semiconductor, and dye lasers; compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long lifespan, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes:

[0004] 1) Laser is generated by stimulated emission of carriers, with a relatively small spectral full width at half maximum, very high brightness, and the output power of a single laser can be in the watt level, while nitride semiconductor light-emitting diodes are spontaneous emission, and the output power of a single light-emitting diode is in the milliwatt level;

[0005] 2) The operating current density of lasers reaches kA / cm², which is more than two orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effects, and more serious electron-hole mismatch, leading to a more serious efficiency droop effect;

[0006] 3) The light-emitting diode undergoes spontaneous transition radiation, which is incoherent light that transitions from a high energy level to a low energy level without external influence, while a laser is stimulated transition radiation, and the energy of the induced photon should be equal to the energy difference between the electron transitions, generating completely identical coherent light of the photon and the induced photon;

[0007] 4) Different principles: The light-emitting diode undergoes radiative recombination and emits light when electrons and holes transition to quantum wells or p-n junctions under the action of an external voltage, while a laser can only lasing when the lasing conditions are met. It must satisfy the condition of carrier population inversion distribution in the active region. The stimulated radiation light oscillates back and forth in the resonant cavity, and the propagation in the gain medium amplifies the light. When the threshold condition is met, the gain is greater than the loss, and finally, laser light is output.

[0008] The nitride semiconductor laser has the following problems: Thermal loss: The Stokes frequency shift loss formed by the photon energy difference between the pump light and the oscillating light is converted into heat, and the energy loss with a coupling rate of less than 1 from the pump energy level to the upper laser energy level is converted into heat. Together, they generate a large amount of waste heat, making the temperature distribution of the laser uneven, causing uneven thermal expansion and thermal stress distribution, and resulting in temperature quenching, laser fracture, thermal lens effect, and stress birefringence effect. The thermal lens produces a lens-like phenomenon in space, while the stress birefringence effect changes the polarization state of the incident light, depolarizing and distorting the laser beam. There are non-radiative recombination losses and free carrier absorption in the active region of the laser chip, generating a large amount of heat. At the same time, the epitaxial and chip materials have resistance, which will generate Joule heat loss and carrier absorption loss under current injection, and the chip material has low thermal conductivity and poor heat dissipation performance, leading to an increase in the temperature of the active layer, resulting in problems such as red shift of the lasing wavelength, decrease in quantum efficiency, reduction in power, increase in threshold current, shortening of lifespan, and deterioration of reliability. Summary of the Invention

[0009] To solve one of the above technical problems, the present invention provides a gallium nitride-based semiconductor laser.

[0010] An embodiment of the present invention provides a gallium nitride-based semiconductor laser, including a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer sequentially arranged from bottom to top. The lower confinement layer includes a first lower confinement layer, a second lower confinement layer, and a third lower confinement layer sequentially arranged from bottom to top. The gallium nitride-based semiconductor laser further includes a multiple vacancy electron-phonon regulation layer, and the multiple vacancy electron-phonon regulation layer includes a first multiple vacancy electron-phonon regulation layer, a second multiple vacancy electron-phonon regulation layer, and a third multiple vacancy electron-phonon regulation layer. The first multiple vacancy electron-phonon regulation layer is disposed between the first lower limit layer and the second lower confinement layer, the second multiple vacancy electron-phonon regulation layer is disposed between the second lower confinement layer and the third lower confinement layer, and the third multiple vacancy electron-phonon regulation layer is disposed between the third lower confinement layer and the lower waveguide layer. The first multiple vacancy electron-phonon regulation layer, the second multiple vacancy electron-phonon regulation layer, and the third multiple vacancy electron-phonon regulation layer all have electron affinity distribution characteristics and polarization optical phonon energy distribution characteristics;

[0011] The electron affinity of the first multiple vacancy electron-phonon regulation layer has a third quadrant curve distribution of the function y1 = A + B*e x1 / x1; The electron affinity of the second multiple vacancy electron-phonon regulation layer has a curve distribution of the function y2 = C + D*lnx2 / x2; The electron affinity of the third multiple vacancy electron-phonon regulation layer has a first quadrant curve distribution of the function y3 = E + F*x3 / lnx3;

[0012] The polarization optical phonon energy of the first multiple vacancy electron phonon regulation layer has a function y4 = M + N * lnx1 / e x1 Curve distribution; the polarization optical phonon energy of the second multiple vacancy electron phonon regulation layer has a function y5 = O + P * e x2 / x2 third quadrant curve distribution; the polarization optical phonon energy of the third multiple vacancy electron phonon regulation layer has a function y6 = Q + R * x3 / e x3 Curve distribution;

[0013] Wherein, x1 is the depth of the first multiple vacancy electron phonon regulation layer in the direction of the second lower limiting layer, x2 is the depth of the second multiple vacancy electron phonon regulation layer in the direction of the third lower limiting layer, and x3 is the depth of the third multiple vacancy electron phonon regulation layer in the direction of the lower waveguide layer.

[0014] Preferably, the electron affinity of the first multiple vacancy electron phonon regulation layer is d, the electron affinity of the second multiple vacancy electron phonon regulation layer is e, and the electron affinity of the third multiple vacancy electron phonon regulation layer is f, where: 0.1 < f < e < d < 10.

[0015] Preferably, the polarization optical phonon energy of the first multiple vacancy electron phonon regulation layer is j, the polarization optical phonon energy of the second multiple vacancy electron phonon regulation layer is k, and the polarization optical phonon energy of the third multiple vacancy electron phonon regulation layer is l, where: 30 (meV) < j < l < k < 800 (meV).

[0016] Preferably, the first multiple vacancy electron phonon regulation layer, the second multiple vacancy electron phonon regulation layer, and the third multiple vacancy electron phonon regulation layer also have electron effective mass distribution characteristics and dielectric constant distribution characteristics;

[0017] The electron effective mass of the first multiple vacancy electron phonon regulation layer has a function y7 = G + H * lnx1 / x1 curve distribution; the electron effective mass of the second multiple vacancy electron phonon regulation layer has a function y8 = I + J * x2 / lnx2 third quadrant curve distribution; the electron effective mass of the third multiple vacancy electron phonon regulation layer has a function y9 = K + L * lnx3 / x3 curve distribution;

[0018] The dielectric constant of the first multiple vacancy electron phonon regulation layer has a function y 10 = S + T * cosx1 / x1 second and fourth quadrant curve distribution; the dielectric constant of the second multiple vacancy electron phonon regulation layer has a function y 11 = U + V * x2 / e x2 Curve distribution; the dielectric constant of the third multiple vacancy electron phonon regulation layer has a function y 12= W + Z * sinx3 / x3 2 First quadrant curve distribution.

[0019] Preferably, the electron effective mass of the first multiple vacancy electron phonon modulation layer is g, the electron effective mass of the second multiple vacancy electron phonon modulation layer is h, and the electron effective mass of the third multiple vacancy electron phonon modulation layer is i, where: 0.01 < g < i < h < 5.

[0020] Preferably, the dielectric constant of the first multiple vacancy electron phonon modulation layer is m, the dielectric constant of the second multiple vacancy electron phonon modulation layer is n, and the dielectric constant of the third multiple vacancy electron phonon modulation layer is p, where: 2 < n < p < m < 20.

[0021] Preferably, the multiple vacancy electron phonon modulation layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

[0022] Preferably, the active layer is a periodic structure composed of well layers and barrier layers, and the number of periods is 3 ≥ m ≥ 1;

[0023] The well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, with a thickness of 10 angstroms to 100 angstroms;

[0024] The stack layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and the thickness is from 10 angstroms to 200 angstroms.

[0025] Preferably, the lower confinement layer, the lower waveguide layer, the upper waveguide layer, and the upper confinement layer are any one or any combination of any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN.

[0026] Preferably, the substrate includes sapphire, silicon, CuW, Mo, TiW, Cu, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x 、sapphire / SiO2 / SiN x composite substrate, any one of magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0027] The beneficial effects of the present invention are as follows: In the semiconductor laser element of the present invention, a multi-layer structure of multiple vacancy electron-phonon regulation layers is provided, and the multi-layer multiple vacancy electron-phonon regulation layers are respectively interspersed in the multi-layer lower confinement layers. At the same time, the electron affinity distribution characteristics and the polarization optical phonon energy distribution characteristics of each layer of multiple vacancy electron-phonon regulation layers are defined to form a single vacancy, vacancy cluster and multi-vacancy regulated electron-phonon structure, localize the electron-phonon between the lower confinement layer and the lower waveguide layer, reduce the Stokes frequency shift formed by the photon energy difference between the pump light and the oscillation light, reduce the thermal loss of phonon vibration and phonon transport, improve the heat dissipation of the laser element and improve the thermal mismatch between epitaxial layers, suppress the thermal lens effect and stress birefringence effect of the laser, improve the laser beam distortion and depolarization problems, and improve the laser beam quality factor. Brief Description of the Drawings

[0028] The accompanying drawings described herein are used to provide a further understanding of the present application and form a part of the present application. The schematic embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation of the present application. In the drawings:

[0029] Figure 1 is a schematic structural diagram of a gallium nitride-based semiconductor laser according to an embodiment of the present invention;

[0030] Figure 2 is a secondary ion mass spectrometry (SIMS) diagram of a gallium nitride-based semiconductor laser according to an embodiment of the present invention.

[0031] Reference numerals:

[0032] 100, substrate; 101, lower confinement layer; 102, lower waveguide layer; 103, active layer; 104, upper waveguide layer; 105, upper confinement layer; 106, multiple vacancy electron-phonon modulation layer;

[0033] 101a, first lower confinement layer; 101b, second lower confinement layer; 101c, third lower confinement layer;

[0034] 106a, first multiple vacancy electron-phonon modulation layer; 106b, second multiple vacancy electron-phonon modulation layer; 106c, third multiple vacancy electron-phonon modulation layer. Detailed implementation manners

[0035] In order to make the technical solutions and advantages in the embodiments of the present application clearer and more understandable, the following further details the exemplary embodiments of the present application with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than an exhaustive list of all embodiments. It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0036] As Figure 1 and Figure 2 shown, this embodiment provides a gallium nitride-based semiconductor laser, which includes a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 arranged in sequence from bottom to top. A multiple vacancy electron-phonon modulation layer 106 is also provided in the gallium nitride-based semiconductor laser.

[0037] Specifically, in this embodiment, the gallium nitride-based semiconductor laser is sequentially provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 from bottom to top. Among them, the lower confinement layer 101 is a multi-layer structure, including a first lower confinement layer 101a, a second lower confinement layer 101b, and a third lower confinement layer 101c, and the first lower confinement layer 101a, the second lower confinement layer 101b, and the third lower confinement layer 101c are sequentially arranged from bottom to top. A multiple vacancy electron-phonon modulation layer 106 is also provided in the semiconductor laser element of the multiple vacancy electron-phonon modulation layer 106. The multiple vacancy electron-phonon modulation layer 106 is also a multi-layer structure, including a first multiple vacancy electron-phonon modulation layer 106a, a second multiple vacancy electron-phonon modulation layer 106b, and a third multiple vacancy electron-phonon modulation layer 106c. Moreover, the first multiple vacancy electron-phonon modulation layer 106a, the second multiple vacancy electron-phonon modulation layer 106b, and the third multiple vacancy electron-phonon modulation layer 106c are respectively interspersed between the first lower confinement layer 101a, the second lower confinement layer 101b, and the third lower confinement layer 101c. That is, the first multiple vacancy electron-phonon modulation layer 106a is disposed between the first lower limit layer and the second lower confinement layer 101b, the second multiple vacancy electron-phonon modulation layer 106b is disposed between the second lower confinement layer 101b and the third lower confinement layer 101c, and the third multiple vacancy electron-phonon modulation layer 106c is disposed between the third lower confinement layer 101c and the lower waveguide layer 102.

[0038] In the multi-layer multiple vacancy electron-phonon modulation layer 106, the first multiple vacancy electron-phonon modulation layer 106a, the second multiple vacancy electron-phonon modulation layer 106b, and the third multiple vacancy electron-phonon modulation layer 106c all have electron affinity distribution characteristics and polarization optical phonon energy distribution characteristics, which are specifically shown as follows:

[0039] Electron affinity distribution:

[0040] The electron affinity of the first multiple vacancy electron-phonon modulation layer 106a has a third quadrant curve distribution of the function y1 = A + B*e x1 / x1;

[0041] The electron affinity of the second multiple vacancy electron-phonon modulation layer 106b has a curve distribution of the function y2 = C + D*lnx2 / x2;

[0042] The electron affinity of the third multiple vacancy electron-phonon modulation layer 106c has a first quadrant curve distribution of the function y3 = E + F*x3 / lnx3;

[0043] Polarization optical phonon energy distribution:

[0044] The polar optical phonon energy of the first multiple vacancy electron-phonon regulation layer 106a has a function y4 = M + N * lnx1 / e x1 Curve distribution;

[0045] The polar optical phonon energy of the second multiple vacancy electron-phonon regulation layer 106b has a function y5 = O + P * e x2 Curve distribution in the third quadrant;

[0046] The polar optical phonon energy of the third multiple vacancy electron-phonon regulation layer 106c has a function y6 = Q + R * x3 / e x3 Curve distribution;

[0047] Where, x1 is the depth of the first multiple vacancy electron-phonon regulation layer 106a in the direction of the second lower confinement layer 101b, x2 is the depth of the second multiple vacancy electron-phonon regulation layer 106b in the direction of the third lower confinement layer 101c, and x3 is the depth of the third multiple vacancy electron-phonon regulation layer 106c in the direction of the lower waveguide layer 102.

[0048] In this embodiment, a multiple vacancy electron-phonon regulation layer 106 with a multi-layer structure is provided in the semiconductor laser element, and the multi-layer multiple vacancy electron-phonon regulation layers 106 are respectively interspersed in the multi-layer lower confinement layer 101. At the same time, the electron affinity distribution characteristics and the polar optical phonon energy distribution characteristics of each layer of the multiple vacancy electron-phonon regulation layer 106 are defined to form a single vacancy, vacancy cluster and multi-vacancy regulated electron-phonon structure, localize the electron-phonon between the lower confinement layer and the lower waveguide layer, reduce the Stokes shift formed by the photon energy difference between the pump light and the oscillating light, reduce the thermal loss of phonon vibration and phonon transport, improve the heat dissipation of the laser element and improve the thermal mismatch between epitaxial layers, suppress the thermal lens effect and stress birefringence effect of the laser, improve the laser beam distortion and depolarization problems, and improve the laser beam quality factor.

[0049] In some alternative embodiments, the electron affinities in the first multiple vacancy electron-phonon regulation layer 106a, the second multiple vacancy electron-phonon regulation layer 106b, and the third multiple vacancy electron-phonon regulation layer 106c also have the following relationship:

[0050] The electron affinity of the first multiple vacancy electron-phonon regulation layer 106a is d, the electron affinity of the second multiple vacancy electron-phonon regulation layer 106b is e, and the electron affinity of the third multiple vacancy electron-phonon regulation layer 106c is f, where: 0.1 < f < e < d < 10.

[0051] In some alternative embodiments, the polar optical phonon energies in the first multiple vacancy electron-phonon regulation layer 106a, the second multiple vacancy electron-phonon regulation layer 106b, and the third multiple vacancy electron-phonon regulation layer 106c also have the following relationship:

[0052] The polarization optical phonon energy of the first multiple vacancy electron - phonon regulation layer 106a is j, the polarization optical phonon energy of the second multiple vacancy electron - phonon regulation layer 106b is k, and the polarization optical phonon energy of the third multiple vacancy electron - phonon regulation layer 106c is l, where: 30 (meV) < j < l < k < 800 (meV).

[0053] In some alternative embodiments, the first multiple vacancy electron - phonon regulation layer 106a, the second multiple vacancy electron - phonon regulation layer 106b, and the third multiple vacancy electron - phonon regulation layer 106c also have electron effective mass distribution characteristics and dielectric constant distribution characteristics, specifically manifested as follows:

[0054] Electron effective mass distribution:

[0055] The electron effective mass of the first multiple vacancy electron - phonon regulation layer 106a has a curve distribution of the function y7 = G + H * lnx1 / x1;

[0056] The electron effective mass of the second multiple vacancy electron - phonon regulation layer 106b has a curve distribution of the function y8 = I + J * x2 / lnx2 in the third quadrant;

[0057] The electron effective mass of the third multiple vacancy electron - phonon regulation layer 106c has a curve distribution of the function y9 = K + L * lnx3 / x3;

[0058] Dielectric constant distribution:

[0059] The dielectric constant of the first multiple vacancy electron - phonon regulation layer 106a has a curve distribution of the function y 10 = S + T * cosx1 / x1 in the second and fourth quadrants;

[0060] The dielectric constant of the second multiple vacancy electron - phonon regulation layer 106b has a curve distribution of the function y 11 = U + V * x2 / e x2 curve distribution;

[0061] The dielectric constant of the third multiple vacancy electron - phonon regulation layer 106c has a curve distribution of the function y 12 = W + Z * sinx3 / x3 2 in the first quadrant curve distribution.

[0062] By limiting the effective electron mass distribution and dielectric constant distribution in each layer of the multiple vacancy electron-phonon modulation layer 106, the electron-hole transport efficiency can be improved, the non-radiative recombination loss and free carrier absorption loss can be reduced, the heat dissipation capacity of the laser can be enhanced, the heat accumulation, joule heat loss and carrier absorption loss in the active layer can be reduced, the temperature of the active layer can be decreased, the quantum efficiency can be increased and the threshold current can be reduced, and problems such as the increase in the temperature of the active layer, the decrease in quantum efficiency, the increase in threshold current and the deterioration of reliability can be improved.

[0063] In some optional embodiments, the effective electron masses in the first multiple vacancy electron-phonon modulation layer 106a, the second multiple vacancy electron-phonon modulation layer 106b and the third multiple vacancy electron-phonon modulation layer 106c also have the following relationship:

[0064] The effective electron mass of the first multiple vacancy electron-phonon modulation layer 106a is g, the effective electron mass of the second multiple vacancy electron-phonon modulation layer 106b is h, and the effective electron mass of the third multiple vacancy electron-phonon modulation layer 106c is i, where: 0.01 < g < i < h < 5.

[0065] In some optional embodiments, the dielectric constants in the first multiple vacancy electron-phonon modulation layer 106a, the second multiple vacancy electron-phonon modulation layer 106b and the third multiple vacancy electron-phonon modulation layer 106c also have the following relationship:

[0066] The dielectric constant of the first multiple vacancy electron-phonon modulation layer 106a is m, the dielectric constant of the second multiple vacancy electron-phonon modulation layer 106b is n, and the dielectric constant of the third multiple vacancy electron-phonon modulation layer 106c is p, where: 2 < n < p < m < 20.

[0067] In some optional embodiments, the multiple vacancy electron-phonon modulation layer 106 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

[0068] In some optional embodiments, the active layer 103 is a periodic structure composed of well layers and barrier layers, and the number of periods is 3 ≥ m ≥ 1.

[0069] Specifically, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and the thickness is 10 angstroms to 100 angstroms.

[0070] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and the thickness is 10 angstroms to 200 angstroms.

[0071] In some optional embodiments, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN.

[0072] In some optional embodiments, the substrate 100 includes sapphire, silicon, CuW, Mo, TiW, Cu, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x sapphire / SiO2 / SiN x composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate, any one of them.

[0073] The following table shows the parameter comparison between a traditional semiconductor laser device and the gallium nitride-based semiconductor laser proposed in this embodiment, including the beam quality factor, threshold current density, and optical power, presenting the differences between the traditional semiconductor laser device and the gallium nitride-based semiconductor laser proposed in this embodiment:

[0074]

[0075] It can be seen that the gallium nitride-based semiconductor laser proposed in this embodiment has improved the beam quality factor and optical power compared with the traditional semiconductor laser device, and reduced the threshold current density, showing obvious advantages compared with the traditional semiconductor laser device.

[0076] Obviously, those skilled in the art can make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalent technologies, this application is also intended to include these changes and modifications.

Claims

1. A gallium nitride-based semiconductor laser, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper confinement layer arranged in sequence from bottom to top, characterized in that: The lower confinement layer includes a first lower confinement layer, a second lower confinement layer and a third lower confinement layer arranged in sequence from bottom to top, the gallium nitride-based semiconductor laser also includes a multiple vacancy electron phonon regulation layer, the multiple vacancy electron phonon regulation layer includes a first multiple vacancy electron phonon regulation layer, a second multiple vacancy electron phonon regulation layer and a third multiple vacancy electron phonon regulation layer, the first multiple vacancy electron phonon regulation layer is arranged between the first lower limit layer and the second lower confinement layer, the second multiple vacancy electron phonon regulation layer is arranged between the second lower confinement layer and the third lower confinement layer, the third multiple vacancy electron phonon regulation layer is arranged between the third lower confinement layer and the lower waveguide layer, the first multiple vacancy electron phonon regulation layer, the second multiple vacancy electron phonon regulation layer and the third multiple vacancy electron phonon regulation layer all have electron affinity energy distribution characteristics and polarization optical phonon energy distribution characteristics; The electron affinity of the first multi-vacancy electron phonon regulation layer has the function y1=A+B*e x1 / x1 third quadrant curve distribution; the electron affinity of the second multiple vacancy electron-phonon regulation layer has a function y2=C+D*lnx2 / x2 curve distribution; the electron affinity of the third multiple vacancy electron-phonon regulation layer has a function y3=E+F*x3 / lnx3 first quadrant curve distribution; The polari-optical phonon energy of the first multi-vacancy electron phonon regulation layer has the function y4=M+N*lnx1 / e x1 Curve distribution; The polari-optical phonon energy of the second multi-vacancy electron phonon regulation layer has the function y5=O+P*e x2 / x2 third quadrant curve distribution; the polari-optical phonon energy of the third multi-vacancy electron phonon regulation layer has the function y6=Q+R*x3 / e x3 Curve distribution; Among them, x1 is the depth of the first multiple vacancy electron-phonon control layer towards the second lower confinement layer, x2 is the depth of the second multiple vacancy electron-phonon control layer towards the third lower confinement layer, and x3 is the depth of the third multiple vacancy electron-phonon control layer towards the lower waveguide layer.

2. The gallium nitride-based semiconductor laser according to claim 1, characterized in that: The electron affinity of the first multiple vacancy electron-phonon regulation layer is d, the electron affinity of the second multiple vacancy electron-phonon regulation layer is e, and the electron affinity of the third multiple vacancy electron-phonon regulation layer is f, wherein: 0.1<f<e<d<10.

3. The gallium nitride-based semiconductor laser according to claim 1, characterized in that: The polarization-optical phonon energy of the first multiple vacancy electron phonon regulation layer is j, the polarization-optical phonon energy of the second multiple vacancy electron phonon regulation layer is k, and the polarization-optical phonon energy of the third multiple vacancy electron phonon regulation layer is l, wherein: 30 (meV) < j < l < k < 800 (meV).

4. The gallium nitride-based semiconductor laser according to claim 1, characterized in that: The first multiple vacancy electron phonon regulation layer, the second multiple vacancy electron phonon regulation layer and the third multiple vacancy electron phonon regulation layer also have electron effective mass distribution characteristics and dielectric constant distribution characteristics; The electron effective mass of the first multiple vacancy electron phonon regulation layer has a function y7=G+H*lnx1 / x1 curve distribution; the electron effective mass of the second multiple vacancy electron phonon regulation layer has a function y8=I+J*x2 / lnx2 third quadrant curve distribution; the electron effective mass of the third multiple vacancy electron phonon regulation layer has a function y9=K+L*lnx3 / x3 curve distribution; The dielectric constant of the first multi-vacancy electron phonon regulation layer has a function y 10 =S+T*cosx1 / x1The second four-quadrant curve distribution; The dielectric constant of the second multi-vacancy electron phonon regulation layer has a function y 11 =U+V*x2 / e x2 Curve distribution; the dielectric constant of the third multi-vacancy electron phonon regulation layer has a function y 12 =W+Z*sinx3 / x3 2 The first quadrant curve distribution.

5. The gallium nitride-based semiconductor laser according to claim 4, characterized in that: The electron effective mass of the first multiple vacancy electron phonon regulation layer is g, the electron effective mass of the second multiple vacancy electron phonon regulation layer is h, and the electron effective mass of the third multiple vacancy electron phonon regulation layer is i, wherein: 0.01<g<i<h<5.

6. The gallium nitride-based semiconductor laser according to claim 4, characterized in that: The dielectric constant of the first multiple vacancy electron phonon regulation layer is m, the dielectric constant of the second multiple vacancy electron phonon regulation layer is n, and the dielectric constant of the third multiple vacancy electron phonon regulation layer is p, wherein: 2<n<p<m<20.

7. The gallium nitride-based semiconductor laser according to claim 1, characterized in that: The multiple vacancy electron phonon regulation layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond.

8. The gallium nitride-based semiconductor laser according to claim 1, characterized in that: The active layer is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3≥m≥1; The well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and has a thickness of 10 angstroms to 100 angstroms; The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, with a thickness of 10 to 200 angstroms.

9. The gallium nitride-based semiconductor laser according to claim 1, characterized in that: The lower limiting layer, lower waveguide layer, upper waveguide layer, and upper limiting layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

10. The gallium nitride-based semiconductor laser according to claim 1, characterized in that: The substrate includes sapphire, silicon, CuW, Mo, TiW, Cu, Ge, SiC, AlN, GaN, GaAs, InP, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , Sapphire / SiO2 / SiN x Any one of a composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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