Deposition masks for metal materials used in OLED pixel deposition

Abstract

The present invention relates to a vapor deposition mask for metal materials used for OLED pixel vapor deposition, which includes a vapor deposition area and a non-vapor deposition area, wherein the vapor deposition area includes a plurality of effective parts and ineffective parts separated from each other along the length direction of the vapor deposition mask, wherein the effective parts include: a plurality of through holes, including a plurality of small surface holes formed on one surface, a plurality of large surface holes formed on another surface opposite to the one surface and connected to the small surface holes, and a connecting part connecting the boundaries of the small surface holes and the large surface holes; and a first concave part formed between the plurality of small surface holes on the one surface, and having an opening area greater than 30% of the opening area of ​​the small surface holes, and the number of the first concave parts in the plurality of effective parts is less than 5.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2020-0007795 (filed on January 21, 2020), which is hereby incorporated by reference in its entirety. Technical Field

[0002] The present embodiment relates to a mask for evaporation of a metal material used for evaporation of OLED pixels, and controls a concave portion that may be generated by surface treatment, thereby solving the evaporation defects caused thereby. Background Art

[0003] Display devices are being applied to a variety of devices. For example, display devices are applied not only to small devices such as smartphones and tablets, but also to large devices such as televisions, monitors, and public displays. In particular, the demand for ultra-high definition UHD (Ultra High Definition) above 500 PPI (Pixel Per Inch) is increasing recently, and high-definition display devices are being applied to small devices as well as large devices. Therefore, the attention to technologies for achieving low power and high definition is also increasing.

[0004] Commonly used display devices can be roughly divided into LCD (Liquid Crystal Display) and OLED (Organic Light Emitting Diode) according to the driving method.

[0005] As a display device driven by liquid crystal, LCD is a display device having a structure in which a light source including CCFL (Cold Cathode Fluorescent Lamp) or LED (Light Emitting Diode) is arranged below the liquid crystal and is driven in a manner that uses the liquid crystal arranged on the light source to adjust the amount of light emitted from the light source.

[0006] In addition, as a display device driven by organic matter, OLED does not require a separate light source. The organic matter itself can act as a light source, so it can be driven with low power. In addition, OLED can show infinite contrast, has a response speed that is about 1,000 times faster than LCD, and has excellent viewing angle. Therefore, it has attracted much attention as a display device that can replace LCD.

[0007] In particular, in OLED, the organic matter contained in the light-emitting layer can be evaporated on the substrate by an evaporation mask called a fine metal mask (FMM, Fine Metal Mask), and the evaporated organic matter can be formed into a pattern corresponding to the pattern formed on the evaporation mask to play the role of a pixel. The evaporation mask is generally made of an Invar metal plate including iron (Fe) and nickel (Ni). Among them, one surface and the other surface of the metal plate form a through hole connecting the one surface and the other surface, and the through hole can be formed at a position corresponding to the pixel pattern. Therefore, organic substances such as red (Red), green (Green) and blue (Blue) can be evaporated on the substrate through the through holes of the metal plate, and an RGB pattern can be formed on the substrate.

[0008] On the other hand, a high etching factor is required to prepare a fine metal mask for high definition. In this case, in order to apply the high etching factor, the adhesion between the metal plate and the photoresist layer should be improved. In addition, the surface of the metal plate is treated to improve the adhesion. In this case, the surface treatment is performed using an acidic chemical such as nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, etc.

[0009] The surface roughness of the metal plate changes depending on the surface treatment conditions. When the surface roughness of the metal plate is too high, recessed portions such as dents will occur on the surface of the metal plate.

[0010] However, in the prior art, the concave portions occurring on the surface of the vapor deposition mask are not managed. That is, in the prior art, the concave portions are not managed at all, or the vapor deposition mask including the concave portions is considered to be defective. For example, in the prior art, the concave portions that do not affect the through holes formed in the vapor deposition mask are not managed. Therefore, when the pixel pattern is vapor-deposited, the concave portions cause vapor deposition defects due to reduced adhesion with the substrate. In addition, in the prior art, when a concave portion occurs on the surface of the vapor deposition mask, it is considered to be defective, thereby reducing the yield of the vapor deposition mask.

[0011] Therefore, there is a need for a vapor deposition mask with a new structure that can improve the vapor deposition mask yield and vapor deposition performance by managing the recessed portions formed on the surface of the vapor deposition mask. Summary of the invention

[0012] Technical issues

[0013] The embodiment aims to provide a vapor deposition mask, which controls the number of recessed portions that can be formed on the surface of the vapor deposition mask, thereby improving the yield of the vapor deposition mask.

[0014] In addition, the embodiment aims to provide a vapor deposition mask, wherein the surface of the vapor deposition mask can include a predetermined number or less of recessed portions, thereby reducing stress that may occur on the vapor deposition mask.

[0015] The technical problems that the proposed embodiments are intended to solve are not limited to the above-mentioned technical problems, and those skilled in the art can clearly understand other technical problems that are not proposed through the following description.

[0016] Technical Solution

[0017] In the evaporation mask of the metal material used for OLED evaporation in the embodiment, the evaporation mask includes a evaporation area and a non-evaporation area, the evaporation area includes a plurality of effective parts and ineffective parts separated from each other along the length direction of the evaporation mask, the effective part includes: a plurality of small surface holes formed on one surface; a plurality of large surface holes formed on another surface opposite to the one surface and connected to the small surface holes; and a first recessed part formed between the plurality of the small surface holes on the one surface, and having an opening area greater than 30% of the opening area of ​​the small surface holes, not connected to the plurality of the small surface holes, and the total number of the recessed parts in the plurality of the effective parts is less than 5.

[0018] Furthermore, the number of the first recessed portions included in each of the effective portions is three or less.

[0019] In addition, the effective portion includes a plurality of island portions located between the plurality of the large surface holes of the other surface, and a height difference between the plurality of island portions is within ±1 μm.

[0020] In addition, the surface roughness Ra value of the one surface is in the range of 0.1 to 0.2 μm.

[0021] In addition, the invention further includes a second recessed portion formed on the one surface and the other surface of the ineffective portion and the non-evaporation region.

[0022] Effects of the Invention

[0023] The surface of the evaporation mask in the embodiment includes at least one concave portion. At least one of the concave portions may be a concave portion generated when the metal plate raw material of the evaporation mask is surface treated. In addition, the surface of the evaporation mask in the embodiment may include concave portions that can improve the conditions of evaporation performance. Specifically, in the embodiment, the number of concave portions with an opening area between 30% and 80% of the opening area of ​​the small surface hole in the overall effective portion of one surface of the evaporation mask is less than 5. In other words, the effective portion of one surface of the evaporation mask in the embodiment can include 1 to 5 concave portions with an opening area between 30% and 80% of the opening area of ​​the small surface hole. Among them, the prescribed number of concave portions formed on one surface of the evaporation mask can play a role in dispersing the stress of the evaporation mask, and therefore, reliability problems such as bending of the evaporation mask can be solved. In addition, when a surface of the evaporation mask includes a concave portion within a prescribed range, it is treated as a sample, so that the evaporation defects caused by the reduced adhesion between the substrate and the concave portion can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figures 1 to 3 This is a conceptual diagram for explaining a process of vapor-depositing an organic substance on a substrate using the vapor-deposition mask of the embodiment.

[0025] Figure 4 This is a diagram showing a top view of a vapor deposition mask according to an example.

[0026] Figure 5 This is a diagram showing a plan view of an effective portion of the vapor deposition mask according to the first embodiment.

[0027] Figure 6 This is an example of an embodiment Figure 5 A cross-sectional view in the BB' direction or the C-C' direction.

[0028] Figure 7 The figures show various forms of recessed portions occurring on one surface of a vapor deposition mask. DETAILED DESCRIPTION

[0029] Hereinafter, the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical idea of ​​the present invention is not limited to the described part of the embodiments, but can be implemented in various forms different from each other, and can be selectively combined and replaced to use one or more of the multiple constituent elements between the multiple embodiments within the scope of the technical idea of ​​the present invention. In addition, as long as it is not clearly defined, the terms (including technical and scientific terms) used in the embodiments of the present invention can be interpreted as the meanings commonly understood by those skilled in the art, and like the terms defined in advance, the commonly used terms can be interpreted based on the meaning of the relevant technology in the text.

[0030] In addition, the terms used in the embodiments of the present invention are used to illustrate multiple embodiments, and the present invention is not limited thereto. In this specification, unless otherwise specified, a singular statement may also include a plural statement, and when it is recorded as "A and (and) at least one (or more than one) of B and C", it may include at least one of all combinations that can be combined by A, B, and C.

[0031] In addition, when describing the components of the embodiments of the present invention, terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only used to distinguish the component from another component, and the nature, order or sequence of the corresponding components are not limited to these terms.

[0032] Furthermore, when it is recorded that a certain component is “connected”, “combined” or “joined” to another component, it includes not only the case where the component is directly connected, combined or joined to the other component, but also the case where the component is “connected”, “combined” or “joined” through another component located between the component and the other component.

[0033] When described as being formed or arranged “on or under” each component, “on or under” includes not only a case where two components are in direct contact with each other but also a case where one or more other components are formed or arranged between the two components.

[0034] In addition, when expressed as "up or down", not only an upward direction but also a downward direction is included based on one component.

[0035] Hereinafter, a vapor deposition mask according to an embodiment will be described with reference to the drawings.

[0036] Figure 1 1 is a cross-sectional view showing an organic vapor deposition apparatus provided with a vapor deposition mask 100 according to an embodiment of the present invention. Figure 2 This is a diagram showing that the vapor deposition mask 100 of the embodiment is extended in order to be installed on the mask frame 200 .

[0037] Reference Figure 1 and Figure 2 The organic vapor deposition device may include a vapor deposition mask 100 , a mask frame 200 , a vapor deposition substrate 300 , an organic vapor deposition container 400 and a vacuum chamber 500 .

[0038] The vapor deposition mask 100 , the mask frame 200 , the vapor deposition substrate 300 , and the organic vapor deposition container 400 may be accommodated in the vacuum chamber 500 . Therefore, the vapor deposition process using the vapor deposition mask 100 may be performed in a vacuum environment.

[0039] The deposition mask 100 may be disposed on one surface of the deposition substrate 300. Specifically, the deposition mask 100 is disposed on a deposition surface on which an organic substance is to be deposited, among both surfaces of the deposition substrate 300, and may be fixed by a mask frame 200.

[0040] Therefore, the organic material can pass through the through holes TH formed in the deposition mask 100 , thereby depositing the organic material for forming the RGB pattern on the deposition surface of the deposition substrate 300 .

[0041] The vapor deposition mask 100 may be stretched in opposite directions at the edge region disposed at the outermost edge of the vapor deposition mask 100. For example, the vapor deposition mask 100 may be stretched in opposite directions at one end and the other end opposite to the one end in the length direction of the vapor deposition mask 100. Therefore, the stretching direction of the vapor deposition mask 100, the X-axis direction, and the length direction of the vapor deposition mask may be the same direction.

[0042] In order to form pixels of three primary colors of light, organic patterns of red, green, and blue may be formed on the substrate 300. That is, an RGB pattern may be formed on the substrate 300.

[0043] In the vacuum chamber 500 , as heat source and / or electric current are supplied to the crucible of the organic vapor deposition container 400 , the organic substance may be vapor-deposited on the substrate 100 .

[0044] Figure 3 FIG. 1 is a diagram showing that a plurality of vapor deposition patterns are formed on the substrate 300 through a plurality of through holes of the vapor deposition mask 100 .

[0045] Reference Figure 3 The evaporation mask 100 may include a surface 101 and another surface 102 opposite to the one surface.

[0046] The one surface 101 of the evaporation mask 100 may include small surface holes V1, and the other surface may include large surface holes V2. For example, the one surface 101 and the other surface 102 of the evaporation mask 100 may include a plurality of small surface holes V1 and a plurality of large surface holes V2, respectively. For example, the evaporation mask 100 may include the one surface 101 formed with a plurality of small surface holes V1 and the other surface 102 formed with a plurality of large surface holes V2 overlapping with the plurality of small surface holes V1 in the thickness direction.

[0047] In addition, the evaporation mask 100 may include through holes TH. The through holes TH can be connected through a connecting portion CA connecting the boundaries of the small surface holes V1 and the large surface holes V2. For example, the connecting portion CA may refer to a portion where the small surface holes V1 and the large surface holes V2 meet each other in the thickness direction.

[0048] In addition, the evaporation mask 100 may include a first inner surface ES1 in the small surface hole V1. The evaporation mask 100 may include a second inner surface ES2 and a third inner surface ES3 in the large surface hole V2. The through hole TH may be formed by the first inner surface ES1 in the small surface hole V1 and the second inner surface ES2 in the large surface hole V2 being connected to each other. For example, the first inner surface ES1 in a small surface hole V1 may form a through hole by being connected to the second inner surface ES2 in a large surface hole V2. Therefore, the number of the through holes TH may correspond to the number of the small surface holes V1 and the large surface holes V2.

[0049] The width of the large surface hole V2 may be greater than the width of the small surface hole V1. At this time, the width of the small surface hole V1 may be measured on one surface 101 of the evaporation mask 100, and the width of the large surface hole V2 may be measured on another surface 102 of the evaporation mask 100.

[0050] The small surface hole V1 may be formed toward the substrate 300. The small surface hole V1 may be formed close to the substrate 300. Therefore, the small surface hole V1 may have a shape corresponding to an evaporation substance, that is, an evaporation pattern (DP).

[0051] The large surface hole V2 may be arranged to face the organic substance evaporation container 400. Therefore, the large surface hole V2 can receive the organic substance supplied from the organic substance evaporation container 400 at a wider width, and can quickly form a fine pattern on the substrate 300 through the small surface hole V1 having a smaller width than the large surface hole V2.

[0052] Figure 4 1 is a top view showing a vapor deposition mask 100 according to an embodiment. Figure 5 , the vapor deposition mask 100 will be described in more detail.

[0053] Reference Figure 4 The vapor deposition mask 100 of the embodiment may include a vapor deposition area DA and a non-vapor deposition area NDA.

[0054] The vapor deposition area DA may be an area for forming a vapor deposition pattern. That is, the vapor deposition material may be vapor deposited on the vapor deposition substrate through the vapor deposition area DA of the vapor deposition mask.

[0055] The vapor deposition mask 100 may include a plurality of vapor deposition areas DA. For example, the vapor deposition area DA of the embodiment may include a plurality of effective portions AA1, AA2, AA3 and an ineffective portion.

[0056] The vapor deposition area DA may include a plurality of separation areas IA1 and IA2 included in one vapor deposition mask 100. The separation areas IA1 and IA2 may be separation areas between a plurality of effective portions.

[0057] The vapor deposition mask 100 may include non-vapor deposition areas NDA on both sides of the vapor deposition area DA in the longitudinal direction. The vapor deposition mask 100 of the embodiment may include the non-vapor deposition areas NDA on both sides of the vapor deposition area DA in the horizontal direction.

[0058] The non-evaporation area NDA of the evaporation mask 100 may be an area that does not participate in evaporation. The non-evaporation area NDA may include frame fixing areas FA1 and FA2 for fixing the evaporation mask 100 to the mask frame 200. In addition, the non-evaporation area NDA may include half-etched portions HF1 and HF2 and an open portion.

[0059] The non-evaporation area NDA may include half-etched portions HF1 and HF2. For example, the non-evaporation area NDA of the evaporation mask 100 may include a first half-etched portion HF1 on one side of the evaporation area DA, and a second half-etched portion HF2 on the other side opposite to the one side of the evaporation area DA. The first half-etched portion HF1 and the second half-etched portion HF2 may be regions where grooves are formed along the depth direction of the evaporation mask 100.

[0060] The half-etched portions HF1 and HF2 may be formed simultaneously when the small surface hole V1 or the large surface hole V2 is formed.

[0061] The non-evaporation area NDA includes frame fixing areas FA1 and FA2 for fixing the evaporation mask 100 to the mask frame 200 .

[0062] The frame fixing areas FA1 and FA2 may be formed between the half-etched portions HF1 and HF2 of the non-evaporation area NDA and an effective portion of the evaporation area DA adjacent to the half-etched portions HF1 and HF2 .

[0063] The evaporation mask 100 may include a plurality of effective portions AA1 , AA2 , and AA3 spaced apart in a length direction and an uneffective portion UA ​​excluding the effective portions.

[0064] The effective parts AA1, AA2, AA3 may include a through hole TH, which includes: a plurality of small surface holes V1 formed on one surface of the evaporation mask 100; a plurality of large surface holes V2 formed on another surface opposite to the one surface; and a connecting portion CA connecting the boundaries of the small surface holes V1 and the large surface holes V2. In addition, the effective parts AA1, AA2, AA3 may include an island portion IS supporting the plurality of through holes TH.

[0065] The island portion IS may be located between adjacent through holes TH among the through holes TH. That is, in the effective areas AA1, AA2, and AA3 of the vapor deposition mask 100, the area other than the through holes TH may be the island portion IS.

[0066] The uneffective area UA may include an area other than the effective area of ​​the vapor deposition area DA and the non-evaporation area NDA. The uneffective area UA may include outer edge areas OA1, OA2, OA3 surrounding the outer edges of the effective areas AA1, AA2, AA3.

[0067] Figure 5 This is a diagram showing a plan view of an effective portion of a vapor deposition mask 100 according to an embodiment.

[0068] Reference Figure 5 The evaporation mask 100 may include a plurality of through holes TH. The plurality of through holes TH may be circular. Specifically, the through hole TH may have a horizontal diameter Cx and a vertical diameter Cy value, and the horizontal diameter Cx and the vertical diameter Cy value of the through hole TH may correspond to each other.

[0069] The plurality of through holes TH may be arranged in a row according to a direction. For example, the plurality of through holes TH may be arranged in a row along a longitudinal axis and a transverse axis.

[0070] Specifically, the first through holes TH1 and the second through holes TH2 may be arranged in a row on the horizontal axis, and the third through holes TH3 and the fourth through holes TH4 may be arranged in a row on the horizontal axis.

[0071] In addition, the first through holes TH1 and the third through holes TH3 may be arranged in a row on the longitudinal axis, and the second through holes TH2 and the fourth through holes TH4 may be arranged in a row on the longitudinal axis.

[0072] That is, when a plurality of through holes TH are arranged in a row in the longitudinal axis and the transverse axis, respectively, the island portion IS may be located between two through holes TH adjacent to each other in a diagonal direction, wherein the diagonal direction is a direction intersecting the longitudinal axis and the transverse axis. That is, the island portion IS may be located between two through holes TH formed adjacent to each other in the diagonal direction.

[0073] The island portion IS may refer to an unetched surface between a plurality of through holes TH on the other surface of the evaporation mask 100 where the large surface hole V2 of the effective portion AA is formed. Specifically, the island portion IS may be another surface of the evaporation mask 100 that is not etched except for the second inner surface ES2 located in the large surface hole and the through hole TH in the effective portion AA of the evaporation mask.

[0074] The diameter of the through hole TH may be the width between the connecting portions CA. Specifically, the diameter of the through hole may be measured at a position where the end of the inner surface in the small surface hole V1 intersects the end of the inner surface in the large surface hole V2. The measuring direction of the diameter of the through hole TH may be any one of the horizontal direction, the vertical direction, and the diagonal direction. The diameter of the through hole TH measured in the horizontal direction may be less than 33 μm. Alternatively, the diameter of the through hole TH measured in the vertical direction may be less than 33 μm. Alternatively, the diameter of the through hole TH may be the average value of the values ​​measured in the horizontal direction, the vertical direction, and the diagonal direction, respectively.

[0075] The ribs RB1 and RB2 may be located between the plurality of through holes TH. A second rib RB2 may be formed between the first through hole TH1 and the second through hole TH2 adjacent thereto in the horizontal direction. In addition, another first rib RB1 may be formed between the first through hole TH1 and the third through hole TH3 adjacent thereto in the vertical direction.

[0076] On the other hand, the evaporation mask 100 may include at least one recessed portion formed on a surface 101 .

[0077] For example, the vapor deposition mask 100 may include one surface 101 formed with small surface holes V1 and another surface 102 formed with large surface holes V2. And, at least one concave portion may be formed on the one surface 101 formed with the small surface holes V1 and the other surface 102 formed with the large surface holes V2. Therefore, the thickness of the vapor deposition mask 100 in the region where the concave portion is formed may be smaller than the thickness of the vapor deposition mask 100 in the region where the concave portion is not formed. For example, the thickness of the vapor deposition mask 100 in the region where the concave portion is formed may be smaller than the thickness of the vapor deposition mask 100 in the region where the concave portion is not formed by the depth of the concave portion.

[0078] Specifically, the vapor deposition mask 100 is formed by the concave portions generated in the metal plate raw material used to prepare the vapor deposition mask 100, so that the finally prepared vapor deposition mask 100 can include concave portions corresponding to the concave portions.

[0079] Such a recess may be attributed to a pre-treatment process performed before forming a through hole on the metal plate. Specifically, a surface treatment process for applying a high etching factor is performed before forming a through hole on the metal plate. For example, a surface treatment layer for improving etching characteristics can be formed before forming a through hole on the surface of the metal plate.

[0080] The surface treatment layer can be formed by treating the surface of the metal plate with chemicals. That is, the metal plate can be treated with acid chemicals such as nitric acid, hydrochloric acid, sulfuric acid, phosphoric acid, etc. before forming the through hole, thereby forming a surface treatment layer on its surface. In addition, during the formation of the surface treatment layer, the surface roughness of the metal plate is changed, and when the surface roughness is shown to be too high, a concave portion can be formed on the surface of the metal plate.

[0081] In addition, the above-mentioned concave portion may be generated when the chemical is concentrated in a specific area during chemical processing, or may be generated by removing impurities on the surface of the metal plate.

[0082] In addition, during the process of forming the through hole in the deposition mask 100 , etching occurs in a region that should not be etched due to a decrease in the adhesion of the photoresist layer, thereby generating the above-mentioned recessed portion.

[0083] The recessed portion may be generated due to various factors during the formation process of the vapor deposition mask 100 .

[0084] At this time, when the concave portions are present in a specific position with a specific number or less, the evaporation performance of the evaporation mask can be improved. Therefore, in the preparation process of the evaporation mask 100 of the embodiment, when the concave portions are present in a specific position with a specific number or less, it is regarded as a qualified product, thereby improving the reliability of the evaporation mask 100 and improving the yield.

[0085] Specifically, in the one surface 101 of the vapor deposition mask 100 of the embodiment, only the recessed portions formed in the effective area AA are managed, so that the vapor deposition performance of the vapor deposition mask 100 can be improved.

[0086] That is, the one surface 101 and the other surface 102 of the vapor deposition mask 100 can form recessed portions due to the above factors.

[0087] Specifically, before forming the through hole TH, recessed portions may be formed on the one surface 101 and the other surface 102 of the evaporation mask 100 .

[0088] The recessed portions may be randomly formed in the vapor deposition area DA and the non-evaporation deposition area NDA in the one surface 101 and the other surface 102 .

[0089] Furthermore, the recesses formed on one surface 101 and the non-evaporation area NDA of the other surface of the evaporation mask 100 will not affect the reliability of the evaporation mask 100. Therefore, in the non-evaporation area NDA, at least one recess can be formed on one surface 101 and the other surface 102 of the evaporation mask 100.

[0090] In addition, the vapor deposition area DA may include an active portion AA and an inactive portion UA. Furthermore, the inactive portion UA ​​may include an outer edge area OA and a separation area IA.

[0091] At this time, recesses may also be formed in the uneffective area UA of the one surface 101 and the other surface 102 of the vapor deposition mask 100. At this time, the recesses in the uneffective area UA do not affect the vapor deposition performance of the vapor deposition mask 100, so the recesses in the uneffective area UA do not need to be managed.

[0092] However, in the embodiment, the concave portion on the effective portion AA can be managed. Therefore, only the concave portion on the effective portion AA is described below. That is, in other areas except the effective portion, concave portions can be formed on one surface 101 and the other surface 102 of the evaporation mask 100, but this does not affect the evaporation performance of the evaporation mask 100. However, the concave portion on the effective portion AA affects the evaporation performance of the evaporation mask 100, so in the embodiment, the concave portion on the effective portion AA is controlled, so that the yield of the evaporation mask can be improved, and the evaporation performance can be improved at the same time.

[0093] At this time, the small surface holes V1 and the large surface holes V2 of the through holes TH are formed on the effective area AA. However, the recessed portion may not be formed on the other surface 102 of the vapor deposition mask 100 where the large surface holes V2 are formed.

[0094] That is, there are a plurality of large surface holes V2 and islands IS in the region corresponding to the effective portion AA in the other surface 102 of the evaporation mask 100. Before forming the through hole TH, even if a recess is formed in the region corresponding to the effective portion AA in the other surface 102 of the evaporation mask 100, all of the recess can be removed when the large surface holes V2 are formed. In addition, a recess is formed in the region corresponding to the effective portion AA in the other surface 102 of the evaporation mask 100. If the recess is not removed when the large surface holes V2 are formed, the recess is located on the island IS and is therefore connected to the large surface holes V2. Furthermore, when the recess is connected to the large surface holes V2, this will increase the opening area of ​​the large surface holes V2, and thus increase the opening area of ​​the large surface holes V2, and is considered to be defective and discarded. In other words, there is no recess in the region corresponding to the effective portion AA in the other surface 102 of the evaporation mask 100 of the embodiment. For example, before forming the through hole TH, even if there are recessed portions in the region corresponding to the effective portion AA in the other surface 102 of the vapor deposition mask 100 , the corresponding recessed portions are removed in the vapor deposition mask 100 processed as a qualified product.

[0095] However, the recessed portions G1 and G2 may exist in a region corresponding to the effective area AA on the one surface 101 of the vapor deposition mask 100 .

[0096] At this time, the recesses G1 and G2 may not be connected to the small surface holes V1, and may be formed between a plurality of small surface holes V1. That is, when the recesses G1 and G2 are connected to the small surface holes V1, the aperture of the small surface holes V1 is increased due to the recesses G1 and G2. Therefore, at least one recess G1 and G2 not connected to the small surface holes V1 may be included on the effective portion AA of the one surface 101 of the evaporation mask 100 of the embodiment.

[0097] At this time, the recesses G1 and G2 may affect the vapor deposition performance of the vapor deposition mask 100 according to the opening areas thereof, or may not affect the vapor deposition performance.

[0098] At this time, in the embodiment, the concave portion whose opening area is less than or equal to 30% of the opening area of ​​the small surface hole V1 may not be controlled. That is, the concave portion whose opening area is less than or equal to 30% of the opening area of ​​the small surface hole V1 does not affect the evaporation performance of the evaporation mask 100, so the concave portion may not be controlled.

[0099] However, the recesses G1 and G2 whose opening areas are larger than 30% of the opening area of ​​the small surface hole V1 may affect the evaporation performance of the evaporation mask 100. Therefore, in the embodiment, the recesses G1 and G2 whose opening areas are larger than 30% of the opening area of ​​the small surface hole V1 are controlled to be less than the specified number.

[0100] However, when a recess having an opening area less than or equal to 30% of the opening area of ​​the small surface hole V1 is connected to the small surface hole V1, the aperture of the small surface hole V1 is increased. Therefore, it is preferred that a recess having an opening area less than the 30% is not connected to the small surface hole V1.

[0101] Next, the control of the recessed portions G1 and G2 having an opening area larger than 30% of the opening area of ​​the small surface hole V1 will be described.

[0102] On the other hand, the vapor deposition mask 100 includes a plurality of effective areas AA. For example, the plurality of effective areas AA may be three or more.

[0103] Furthermore, on the one surface 101 of the vapor deposition mask 100 of the embodiment, the total number of the recessed portions G1 and G2 formed in the regions corresponding to the plurality of effective areas AA is controlled to be 5 or less.

[0104] At this time, when the total number of the recesses G1 and G2 formed on the area corresponding to the plurality of effective portions AA in the one surface 101 of the evaporation mask 100 is greater than 5, the adhesion between the evaporation mask 100 and the substrate may be reduced due to the recesses G1 and G2 during the evaporation of the organic matter, thereby reducing the evaporation performance. Therefore, in the embodiment, the total number of the recesses G1 and G2 formed on the one surface 101 of the evaporation mask 100 corresponding to the plurality of effective portions AA is controlled to be 5 or less.

[0105] That is, when the number of the concave portions G1 and G2 is 5 or less, the evaporation of organic matter can be achieved without reducing the adhesion between the substrate and the evaporation mask 100. In addition, when the number of the concave portions G1 and G2 is 5 or less, the stress of the evaporation mask 100 can be dispersed by the concave portions G1 and G2, thereby solving the problem of the evaporation mask 100 bending and the like, thereby further improving the evaporation performance.

[0106] On the other hand, when the recessed portions G1 and G2 are concentrated in any one of the plurality of effective portions, the evaporation performance in the corresponding effective portion may be reduced.

[0107] Therefore, the total number of the concave portions G1 and G2 formed on the region corresponding to one effective portion AA in one surface 101 of the vapor deposition mask 100 described in the embodiment is controlled to be less than 3. Furthermore, when less than 3 concave portions G1 and G2 are formed on one effective portion AA, the vapor deposition performance of the vapor deposition mask 100 can be improved without reducing the vapor deposition performance in the relevant effective portion AA.

[0108] On the other hand, during the surface treatment process, the recessed portions in the embodiment are generated in the process of adjusting the surface roughness Ra of the vapor deposition mask 100 to 100-200nm (0.1-0.2μm). Therefore, the surface roughness Ra of the vapor deposition mask 100 in the embodiment can be 100-200nm (0.1-0.2μm). Moreover, when the surface roughness Ra of the vapor deposition mask 100 is 100-200nm (0.1-0.2μm), the recessed portions G1 and G2 may be generated. Therefore, in the embodiment, the total number of recessed portions G1 and G2 on the effective portion AA area of ​​a surface 101 having small surface holes V1 is controlled, so that the vapor deposition performance can be improved by dispersing the stress, while preventing the decrease in the adhesion between the substrate and the organic substance during the vapor deposition process.

[0109] Figure 6 This is an example of an embodiment Figure 5 A cross-sectional view in the B-B' direction or the C-C' direction, Figure 7 The figures show various forms of recessed portions occurring on one surface of a vapor deposition mask.

[0110] In other words, the 1-1st through hole TH1-1 and the 1-2nd through hole TH1-2 may be arranged in the horizontal direction or in the vertical direction on the deposition mask 100. That is, the 1-2nd through hole TH1-2 may be formed between a plurality of 1-1st through holes TH1-1. Figure 6 The 1-1 through hole TH1-1 and the 1-2 through hole TH1-2 arranged in the longitudinal direction may be shown, or the 1-1 through hole TH1-1 and the 1-2 through hole TH1-2 arranged in the transverse direction may be shown.

[0111] Reference Figure 6 and Figure 7 The evaporation mask 100 may include a 1-1th through hole TH1-1 formed with the first small surface hole V1-1 and the first large surface hole V2-1 by connecting the first small surface hole V1-1 and the first large surface hole V2-1 to each other.

[0112] In addition, the evaporation mask 100 can form the second small surface hole V1-2 and the second large surface hole V2-2 adjacent to the 1-1 through hole TH1-1 or at a specified interval, and can form the 1-2 through hole TH1-2 by connecting the second small surface hole V1-2 and the second large surface hole V2-2 to each other.

[0113] At this time, the deposition mask 100 may have a specific thickness. The deposition mask 100 may have a first thickness T1 in a region where the 1-1 through hole TH1-1 is formed, or may have a second thickness T2 in a region where the 1-2 through hole TH1-2 is formed. However, the first thickness T1 may be 95% to 105% of the second thickness T2, but is not limited thereto.

[0114] At this time, the first thickness T1 can be defined as the thickness of the 2-1 rib RB2-1 of the evaporation mask 100 located in the area adjacent to the 1-1 through hole TH1-1, and the second thickness T2 can be defined as the thickness of the 2-2 rib RB2-2 of the evaporation mask 100 located in the area adjacent to the 1-2 through hole TH1-2.

[0115] The first thickness T1 and the second thickness T2 may be the same, and may have different thicknesses within a range of error due to various factors in a process of manufacturing the vapor deposition mask 100 .

[0116] The first thickness T1 and the second thickness T2 may be about 15 μm or less. For example, the first thickness T1 and the second thickness T2 may be about 7 μm to about 10 μm. For example, the first thickness T1 and the second thickness T2 may be about 6 μm to about 9 μm.

[0117] When the first thickness T1 and the second thickness T2 are greater than about 15 μm, it may be difficult to form a high-definition OLED evaporation pattern of 500 PPI or higher. In addition, when the first thickness T1 and the second thickness T2 are less than about 6 μm, it may be difficult to uniformly form an evaporation pattern.

[0118] Therefore, the first thickness T1 and the second thickness T2 may be the same or different from each other, and have different sizes while satisfying the above range.

[0119] More specifically, the first thickness T1 and the second thickness T2 can have a difference within a specified size range while satisfying the range. For example, the first thickness T1 is greater than the second thickness T2, and the second thickness T2 can be more than 97% of the first thickness T1, that is, more than 0.97 times.

[0120] That is, the first thickness T1 and the second thickness T2 may satisfy the following Mathematical Formula 1.

[0121] Mathematical formula 1:

[0122] first thickness×0.97≤second thickness<first thickness

[0123] If the second thickness T2 is less than 0.97 times the first thickness T1, the deviation of the first thickness T1 and the second thickness T2 may increase the deviation of the inclination angles of the plurality of through holes when forming through holes on the metal plate as the raw material of the evaporation mask.

[0124] On the other hand, as shown in the figure, the 1-1 through hole TH1-1 and the 1-2 through hole TH1-2 include a small surface hole and a large surface hole, respectively. And, the 1-1 through hole TH1-1 and the 1-2 through hole TH1-2 may have substantially the same inclination angle as each other. Specifically, the inclination angles of the 1-1 through hole TH1-1 and the 1-2 through hole TH1-2 may also be different from each other, and the deviation thereof may be within the error range.

[0125] That is, the angle of the inner surface of the first large surface hole V2-1 of the 1-1 through hole TH1-1 can be defined as the first inclination angle θ1 of the extension line of one end E1 of the second inner surface ES2 connecting the other surface and the first large surface hole V2-1 and one end E2 of the connecting part between the first small surface hole V1-1 and the first large surface hole V2-1.

[0126] In addition, the angle of the inner surface of the second large surface hole V2-2 of the 1-2 through hole TH1-2 can be defined as a second inclination angle θ2 of an extension line of one end E1 of the second inner surface ES2 connecting the other surface and the second large surface hole V2-2 and one end E2 of the connecting portion between the second small surface hole V1-2 and the second large surface hole V2-2.

[0127] At this time, the first inclination angle θ1 of the 1-1th through hole TH1-1 may be substantially the same as the second inclination angle θ2 of the second large surface hole V2-2 of the 1-2th through hole TH1-2.

[0128] At this time, a first inclination angle θ1 of the first large surface hole V2-1 of the 1-1th through hole TH1-1 and a second inclination angle θ2 of the second large surface hole V2-2 of the 1-2th through hole TH1-2 may be 30° to 55°.

[0129] Therefore, while forming a high-definition vapor deposition pattern of 400 PPI level or higher, specifically, 500 PPI level or higher, the island portion IS can be present on the other surface of the vapor deposition mask 100 .

[0130] In addition, the width W4 of the through portion of the 1-1th through hole TH1-1 in the embodiment may be substantially the same as the width of the through portion of the 1-2th through hole TH1-2.

[0131] In addition, the height H of the first small surface hole V1-1 of the 1-1th through hole TH1-1 in the embodiment may be the same as the height H of the second small surface hole V1-2 of the 1-2th through hole TH1-2.

[0132] In other words, although the 1-1 through hole TH1-1 and the 1-2 through hole TH1-2 are prepared in different ways, the inclination angle of the large surface hole, the height of the small surface hole and the width of the connecting portion they respectively have can be substantially the same or have deviations within the error range.

[0133] That is, the height H of each of the small surface holes of the 1-1 through hole TH1-1 and the 1-2 through hole TH1-2 may be approximately 4.0 μm or less. The height H of the small surface holes in the second rib RB2 of the deposition mask 100 may be approximately 3.5 μm or less.

[0134] Preferably, the height H of each small surface hole of the 1-1th through hole TH1-1 and the 1-2th through hole TH1-2 may be about 3.5 μm or less. The height H of each small surface hole of the 1-1th through hole TH1-1 and the 1-2th through hole TH1-2 may be about 2.5 μm or less.

[0135] Preferably, the height H of the plurality of small surface holes of the 1-1st through hole TH1-1 and the 1-2nd through hole TH1-2 may be about 0.1 μm to about 3.4 μm. For example, the height H of the plurality of small surface holes of the 1-1st through hole TH1-1 and the 1-2nd through hole TH1-2 may be about 0.5 μm to about 3.2 μm. For example, the height H of the plurality of small surface holes of the 1-1st through hole TH1-1 and the 1-2nd through hole TH1-2 may be about 1 μm to about 3 μm.

[0136] The height may be measured in the thickness measurement direction of the vapor deposition mask 100, that is, in the depth direction, and may be measured from a surface of the vapor deposition mask 100 to the height of the connecting portion. Figure 5 The horizontal direction (x direction, length direction, stretching direction) and vertical direction (y direction, width direction, stretching vertical direction) in the top view are measured in the z-axis direction at 90 degrees respectively.

[0137] When the height H of the plurality of small surface holes of the 1-1 through hole TH1-1 and the 1-2 through hole TH1-2 is greater than about 3.5 μm, during OLED evaporation, evaporation defects occur due to a shadow effect in which the evaporation material diffuses to an area larger than the area of ​​the through hole.

[0138] In addition, the aperture W3 of the surface on which the small surface holes are formed and the aperture W4 of the connecting portion as the boundary between the small surface holes and the large surface holes of the evaporation mask 100 may be similar to or different from each other. At this time, the aperture of the small surface hole of the 1-1 through hole TH1-1 and the aperture of the small surface hole of the 1-2 through hole TH1-2 correspond to each other, and the aperture of the connecting portion of the 1-1 through hole TH1-1 and the aperture of the connecting portion of the 1-2 through hole TH1-2 correspond to each other.

[0139] The pore size W3 of one surface of the evaporation mask 100 having small surface pores may be larger than the pore size W4 in the communication portion. For example, the difference between the pore size W3 of one surface of the evaporation mask 100 and the pore size W4 of the communication portion may be about 0.01 μm to about 1.1 μm.

[0140] For example, the difference between the pore size W3 of one surface of the evaporation mask and the pore size W4 in the connecting portion may be about 0.03 μm to about 1.1 μm. For example, the difference between the pore size W3 of one surface of the evaporation mask and the pore size W4 in the connecting portion may be about 0.05 μm to about 1.1 μm.

[0141] When the difference between the pore diameter W3 of the one surface of the vapor deposition mask 100 and the pore diameter W4 of the communication portion is greater than about 1.1 μm, vapor deposition defects may occur due to a shadow effect.

[0142] On the other hand, the thickness of the effective portion AA of the vapor deposition mask 100 of the embodiment where the through hole is formed by etching and the thickness of the uneffective portion UA ​​which is not etched may be different from each other.

[0143] Specifically, the thickness of the ineffective portion UA ​​of the evaporation mask 100 of the embodiment may be greater than the thickness of the effective portions AA1, AA2, and AA3. For example, the maximum thickness of the ineffective portion UA ​​or the non-evaporation area NDA of the evaporation mask 100 may be about 30 μm or less. For example, the maximum thickness of the ineffective portion UA ​​or the non-evaporation area NDA of the evaporation mask 100 may be about 25 μm or less. For example, the maximum thickness of the ineffective portion or the non-evaporation area of ​​the evaporation mask of the embodiment may be about 15 μm to about 25 μm.

[0144] When the maximum thickness of the ineffective portion or non-evaporation area of ​​the evaporation mask of the embodiment is greater than about 30 μm, the thickness of the metal plate 10 as the raw material of the evaporation mask 100 becomes thick, so it may be difficult to form a fine-sized through hole TH. In addition, when the maximum thickness of the ineffective portion UA ​​or non-evaporation area NDA of the evaporation mask 100 is less than about 15 μm, the thickness of the metal plate is thin, so it is difficult to form a uniform-sized through hole.

[0145] On the other hand, at least one concave portion G1, G2 is formed in the effective portion AA of the one surface 101 of the vapor deposition mask 100 of the embodiment. For example, the first concave portion G1 may be formed in the adjacent region of the first small surface hole V1-1. In addition, the second concave portion G2 may be formed in the adjacent region of the second small surface hole V1-2.

[0146] At this time, the first concave portion G1 can be formed to be spaced apart from the position vertically overlapping with the 2-1st rib RB2-1 by a predetermined interval. Therefore, the first concave portion G1 may not affect the first thickness T1. However, when the first concave portion G1 is formed at the position vertically overlapping with the 2-1st rib RB2-1, the first thickness T1 may be reduced at this position in accordance with the thickness of the first concave portion G1.

[0147] In addition, the second recess G2 can be formed to be spaced apart from the position vertically overlapping with the 2-2 rib RB2-2 by a predetermined interval. Therefore, the second recess G2 may not affect the second thickness T2. However, when the second recess G2 is formed at the position vertically overlapping with the 2-2 rib RB2-2, the second thickness T2 may be reduced at the position corresponding to the thickness of the second recess G2.

[0148] At this time, a third recess (not shown) can be formed in other areas (for example, ineffective parts and non-evaporation areas) other than the effective part AA in one surface 101 and the other surface 102 of the evaporation mask 100 of the embodiment. However, the third recess does not affect the evaporation performance of the evaporation mask 100. However, when the number of the third recesses increases, the overall strength of the evaporation mask may weaken. Therefore, in the embodiment, the number of third recesses formed on the one surface and the other surface of the ineffective part and the non-evaporation area other than the effective part AA can also be controlled. For example, the opening area of ​​the third recess can be greater than 30% of the opening area of ​​the small surface hole, and the number thereof can be 15 or less.

[0149] Furthermore, among the recesses formed in the effective portion AA, recesses having an opening area less than or equal to 30% of the opening area of ​​the small surface holes do not affect the evaporation performance of the evaporation mask 100, and therefore recesses having an opening area greater than 30% of the opening area of ​​the small surface holes are controlled.

[0150] At this time, no recess may be formed on the effective portion AA of the other surface 102 of the vapor deposition mask 100. That is, the recess formed on the effective portion of the other surface 102 of the vapor deposition mask 100 may be removed during the process of forming the large surface hole, or may be considered as a defect and discarded because it is connected to the large surface hole.

[0151] Reference Figure 7The concave portion formed on the surface 101 of the vapor deposition mask may have various shapes. Figure 7 As shown in (a), the concave portion Ga may not be connected to the small surface hole and its opening area is less than or equal to 30% of the opening area of ​​the small surface hole. These concave portions Ga do not affect the evaporation performance of the evaporation mask, so their number is not limited.

[0152] In addition, refer to Figure 7 (b), the concave portion Gb may not be connected to the small surface hole and its opening area is greater than 30% of the opening area of ​​the small surface hole. When the number of such concave portions Gb is less than a fixed number, the evaporation performance can be improved by dispersing the stress, and when it is greater than a specified number, the evaporation performance can be reduced. Therefore, in the embodiment, the number of the concave portions is limited, so that the evaporation performance of the evaporation mask 100 can be improved.

[0153] In addition, refer to Figure 7 (c), the concave portion Gc can be connected to the small surface hole. And, the concave portion Gc connected to the small surface hole increases the aperture of the small surface hole. And, the vapor deposition mask including the concave portion Gc connected to the small surface hole may be considered defective.

[0154] That is, in the embodiment, when the opening area of ​​the recess is larger than 30% of the opening area of ​​the small surface hole, the evaporation performance can be improved by dispersing the stress. Therefore, the evaporation performance of the evaporation mask 100 can be improved by controlling the number of recesses Gb, and the yield can be improved at the same time.

[0155] For example, the recessed portions G1 and G2 may be formed in the effective area AA of the one surface 101 of the vapor deposition mask 100 .

[0156] At this time, on the one surface 101 of the vapor deposition mask 100 of the embodiment, the total number of the recessed portions G1 and G2 formed in the region corresponding to the plurality of effective areas AA is controlled to be 5 or less.

[0157] At this time, when the total number of the concave portions G1 and G2 formed in the region corresponding to the plurality of effective portions AA on the one surface 101 of the evaporation mask 100 is greater than 5, the adhesion between the evaporation mask 100 and the substrate may be reduced due to the concave portions G1 and G2 during the evaporation of the organic substance, thereby reducing the evaporation performance. Therefore, in the embodiment, the total number of the concave portions G1 and G2 formed on the one surface 101 of the evaporation mask 100 corresponding to the plurality of effective portions AA is controlled to be 5 or less.

[0158] That is, when the number of the concave portions G1 and G2 is 5 or less, the evaporation of organic matter is achieved without reducing the adhesion between the substrate and the evaporation mask 100. In addition, when the number of the concave portions G1 and G2 is 5 or less, the stress of the evaporation mask 100 can be dispersed by the concave portions G1 and G2, thereby solving the problem of the evaporation mask 100 bending and the like, thereby further improving the evaporation performance.

[0159] On the other hand, when the recessed portions G1 and G2 are concentrated in any one of the plurality of effective portions, the evaporation performance in the corresponding effective portion may be reduced.

[0160] Therefore, the total number of the concave portions G1 and G2 formed in the region corresponding to one effective portion AA in one surface 101 of the vapor deposition mask 100 of the embodiment is controlled to be less than 3. Furthermore, when less than 3 concave portions G1 and G2 are formed in one effective portion AA, the vapor deposition performance of the vapor deposition mask 100 can be improved without reducing the vapor deposition performance in the relevant effective portion AA.

[0161] On the other hand, during the surface treatment process, the recesses in the embodiment are generated in the process of adjusting the surface roughness Ra of the vapor deposition mask 100 to 100-200nm (0.1-0.2μm). Therefore, the surface roughness Ra of the vapor deposition mask 100 in the embodiment can be 100-200nm (0.1-0.2μm). Moreover, when the surface roughness Ra of the vapor deposition mask 100 is 100-200nm (0.1-0.2μm), the recesses G1 and G2 can be generated. Therefore, in the embodiment, the total number of recesses G1 and G2 on the effective part AA area of ​​a surface 101 having small surface holes V1 is controlled, so that the vapor deposition performance can be improved by dispersing stress, while preventing the adhesion between the substrate and the substrate from being reduced during the organic vapor deposition process.

[0162] On the other hand, in the effective portion, the recess is formed on one surface of the evaporation mask having the small surface holes. And, in the effective portion, the recess is not formed on the other surface of the evaporation mask. That is, the other surface of the evaporation mask only includes a plurality of large surface holes and a plurality of islands therebetween. And, since the recess is not formed on the plurality of islands, the heights of the plurality of islands can be substantially the same as each other. Specifically, since the recess is not formed on the plurality of islands, the actual height difference between the plurality of islands is between ±1μ.

[0163] The features, structures, effects, etc. described in the above embodiments are included in at least one embodiment of the present invention, but are not necessarily limited to one embodiment. In addition, the features, structures, effects, etc. exemplified in each embodiment can also be implemented by those skilled in the art after combining or deforming other embodiments. Therefore, the contents related to these combinations and deformations should be interpreted as being included in the scope of the present invention.

[0164] In addition, although the above description is centered on the embodiment, this is only an example, and the present invention is not limited thereto. It should be understood by those skilled in the art that various modifications and applications not illustrated above can be made within the scope of the essential characteristics of the present embodiment. For example, each component specifically shown in a plurality of embodiments can be implemented after deformation. Furthermore, the distinguishing technical features related to such modifications and changes should be interpreted as being included within the scope of the present invention as specified in the attached claims.

Claims

1. A mask for evaporation of a metal material for OLED pixel evaporation, characterized in that: Including the vapor deposition area and the non-vapor deposition area, The vapor deposition region includes a plurality of effective portions and ineffective portions separated from each other along the length direction of the vapor deposition mask. The effective part includes: A plurality of through holes, including a plurality of small surface holes formed on one surface, a plurality of large surface holes formed on another surface opposite to the one surface and communicating with the small surface holes, and a communicating portion connecting the boundaries of the small surface holes and the large surface holes; and The first concave portion is formed between the plurality of small surface holes on the one surface, and the opening area thereof is greater than 30% of the opening area of ​​the small surface holes. Five or less first recesses are formed in the plurality of effective portions, Wherein, the first recess is not connected to the small surface hole.

2. The evaporation mask for metal material used for OLED pixel evaporation according to claim 1, characterized in that: The number of the first recessed portions included in each of the effective portions is three or less.

3. The evaporation mask for metal material used for OLED pixel evaporation according to claim 1 or 2, characterized in that: The effective portion includes a plurality of island portions, the plurality of island portions being located between the plurality of the large surface holes of the other surface, The height difference between the plurality of island portions is within the range of ±1 μm.

4. The evaporation mask for metal material used for OLED pixel evaporation according to claim 1 or 2, characterized in that: The surface roughness Ra value of the one surface is in the range of 0.1 to 0.2 μm.

5. The evaporation mask for metal material used for OLED pixel evaporation according to claim 1 or 2, characterized in that: The effective portion further comprises a second recess, The second recessed portion is not connected to the small surface hole and has an opening area that is less than or equal to 30% of the opening area of ​​the small surface hole.

6. The evaporation mask for metal material used for OLED pixel evaporation according to claim 1, characterized in that: The third recessed portions are formed on the one surface and the other surface of the ineffective portion and the non-evaporation region, and the opening area thereof is larger than 30% of the opening area of ​​the small surface holes and the number thereof is 15 or less.

7. The evaporation mask for metal material used for OLED pixel evaporation according to claim 1 or 2, characterized in that: A surface roughness Ra of at least one of the one surface and the other surface satisfies a range of 100 nm to 200 nm.

8. The metal deposition mask for OLED pixel deposition according to claim 1 or 2, characterized in that: The effective part includes: a first rib adjacent to a first through hole among the plurality of through holes; and The second rib, adjacent to the second through hole, The first thickness (T1) of the first rib and the second thickness (T2) of the second rib satisfy the following mathematical formula 1: Mathematical formula 1: first thickness×0.97≤second thickness<first thickness.

9. The evaporation mask for metal material used for OLED pixel evaporation according to claim 1 or 2, characterized in that: An extended line connecting one end of the inner side surface of the large surface hole and one end of the communication portion between the small surface hole and the large surface hole has an inclination angle of 30° to 55° relative to the other surface.

10. The metal deposition mask for OLED pixel deposition according to claim 9, characterized in that: The small surface pores have a height of 0.1 μm to 3.4 μm.

11. The metal deposition mask for OLED pixel deposition according to claim 10, characterized in that: A difference between a pore diameter (W3) of the small surface pores on the one surface and a pore diameter (W4) of the communication portion is 0.03 μm to 1.1 μm.

12. The metal deposition mask for OLED pixel deposition according to claim 8, characterized in that: The first recess vertically overlaps the first rib or the second rib.

13. The vapor deposition mask for metal material used for OLED pixel vapor deposition according to claim 1 or 2, characterized in that: The opening area of ​​the first recess is between greater than 30% and 80% of the opening area of ​​the small surface hole.

14. The metal deposition mask for OLED pixel deposition according to claim 1 or 2, characterized in that: The surface roughness of the vapor deposition mask is 100 to 200 nm.

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