Substrate cleaning apparatus and substrate cleaning method

Abstract

The present invention relates to a substrate cleaning apparatus and a substrate cleaning method, which can improve uniformity of removal rate of impurities, particles, and the like on a surface of a substrate during cleaning of the substrate. The substrate cleaning apparatus can abut a cleaning member to a surface of a circular substrate, rotate the substrate and the cleaning member relative to each other to clean the surface, and expand a contact area of the cleaning member, which contacts the surface, from a center side of the substrate to a peripheral side of the substrate in a radial manner.

Description

Technical Field

[0001] This invention relates to a substrate cleaning apparatus and a substrate cleaning method. Background Technology

[0002] Patent Document 1 discloses a rotary cleaning apparatus, comprising: a rotary table that holds a wafer and can rotate at high speed; a cleaning water supply mechanism for supplying cleaning water to the wafer; a first brush mechanism that can be selectively placed in an active position and an inactive position, wherein in the active position the upper surface of the brush is positioned such that its upper surface is approximately one with the upper surface of the rotary table; and a second brush mechanism that is opposite to the first brush mechanism and can be selectively placed in an active position and an inactive position, wherein in the active position the surface of the brush is in contact with the upper surface of the wafer.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2000-260740 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] The technology of this invention improves the uniformity of the removal rate of impurities, particles, etc. on the substrate surface during substrate cleaning.

[0008] Technical solutions for solving technical problems

[0009] One aspect of the present invention is a substrate cleaning apparatus capable of bringing a cleaning component abutting against the surface of a circular substrate, causing the substrate and the cleaning component to rotate relative to each other to clean the surface, wherein the contact area of ​​the cleaning component with the surface extends radially from the center side of the substrate to the periphery side of the substrate.

[0010] Invention Effects

[0011] According to the present invention, the uniformity of the removal rate of impurities, particles, etc. on the substrate surface can be improved during substrate cleaning. Attached Figure Description

[0012] Figure 1 This is a perspective view of the substrate cleaning apparatus of this embodiment.

[0013] Figure 2 This is an explanatory diagram of the longitudinal section of the substrate cleaning apparatus of this embodiment.

[0014] Figure 3 This is a perspective view of the cleaning mechanism in the substrate cleaning apparatus of this embodiment.

[0015] Figure 4This is a plan view illustrating the relationship between the central cleaning component and the wafer in the substrate cleaning apparatus of this embodiment.

[0016] Figure 5 This is a plan view illustrating the relationship between the peripheral cleaning components and the wafer in the substrate cleaning apparatus of this embodiment.

[0017] Figure 6 This is a longitudinal cross-sectional diagram illustrating the operation of cleaning the central portion of a wafer using the central cleaning component of the substrate cleaning apparatus of this embodiment.

[0018] Figure 7 This is a longitudinal cross-sectional illustration showing the cleaning of the central portion of a wafer using the central cleaning component of the substrate cleaning apparatus of this embodiment.

[0019] Figure 8 This is a longitudinal cross-sectional diagram illustrating the operation of cleaning the peripheral portion of a wafer using the peripheral cleaning component in the substrate cleaning apparatus of this embodiment.

[0020] Figure 9 This is a longitudinal cross-sectional diagram illustrating the cleaning of the peripheral portion of a wafer using the peripheral cleaning component in the substrate cleaning apparatus of this embodiment.

[0021] Figure 10 It is a plan view of the central cleaning component with grooves.

[0022] Figure 11 It is a plan view of the surrounding cleaning components that form grooves.

[0023] Figure 12 It is a plan view of the central cleaning component with the center of the fan-shaped part offset from the center of the wafer.

[0024] Figure 13 This is a plan view of the peripheral cleaning components with the center of the fan-shaped part located on the outside of the wafer.

[0025] Explanation of reference numerals in the attached figures

[0026] 1. Substrate cleaning device

[0027] 2 Adsorption head

[0028] 3. Rotating suction cup

[0029] 4 lower cup body

[0030] 5. Joint support section

[0031] 6. Beam section

[0032] 7 Conveyor Belt

[0033] 10 Cleaning facilities

[0034] 11, 54 Cleaning Fluid Nozzle

[0035] 12 Rotating base

[0036] 31 Upper cup body

[0037] 60 Central cleaning unit

[0038] 70 Peripheral cleaning components

[0039] 100 Control Department

[0040] W chip. Detailed Implementation

[0041] In the manufacturing process of semiconductor devices, for example, in order to keep semiconductor wafers (hereinafter referred to as wafers) in a clean state, the wafers are cleaned as needed before and after each manufacturing and processing process.

[0042] In this regard, in the technology described in Patent Document 1, a circular brush is pressed onto the upper surface of a wafer, which may be called a circular substrate, and an operation is performed, for example, to rotate and scan the wafer to remove impurities from the upper surface of the wafer.

[0043] However, it is known that in methods such as using a circular brush to rotate and scan the surface of a wafer for removal, the removal rate varies depending on the radial position of the wafer. It has been determined that this is because when the circular brush is rotated and scanned, for example, the perimeter of the wafer, the circumference ratio of the circular brush (the arc length of the area covered by the circular brush / the perimeter of the wafer) differs between positions closer to the center of the wafer and positions further outward.

[0044] Therefore, in the technology of the present invention, the perimeter ratio of such a brush is improved, thereby increasing the uniformity of the removal rate of impurities, particles, etc. in the substrate surface.

[0045] The structure of the substrate cleaning apparatus of this embodiment will now be described with reference to the accompanying drawings. Furthermore, in this specification, elements having substantially the same functional structure are labeled with the same reference numerals, and repeated descriptions are omitted.

[0046] Figure 1 This is a perspective view of the substrate cleaning apparatus 1. Figure 2 The diagram shows its longitudinal cross-section. The substrate cleaning apparatus 1 includes: suction heads 2 and 2 that horizontally hold and hold a wafer W; a rotating suction cup 3 that receives the wafer W from the suction heads 2 and 2 and holds it horizontally; and a cleaning mechanism 10 for cleaning the back side of the wafer W. The suction heads 2 and 2 constitute a first substrate holding section, and the rotating suction cup 3 constitutes a second substrate holding section. The suction heads 2 and 2, the rotating suction cup 3, and the cleaning mechanism 10 are disposed in a box-shaped lower cup body 4 with an opening on its upper surface.

[0047] The lower cup body 4 is rectangular when viewed from above, and has opposing side walls, which are oriented towards the aforementioned... Figure 1 The direction in which the two opposing sidewalls 4a and 4b extend from the front and inner sides is described as the X direction.

[0048] The aforementioned suction heads 2, 2 are configured to horizontally suction and hold the area on the back side of the wafer W that does not overlap with the central portion, and are movable in the horizontal direction. Each suction head 2, 2 is constructed of, for example, an elongated block-shaped body. The suction heads 2, 2 are configured to support and hold the periphery of the back side of the wafer W in parallel. The aforementioned suction heads 2, 2 are connected to a suction mechanism (not shown) and function as vacuum chucks that suction and hold the wafer W using suction holes (not shown) on their upper surfaces. Furthermore, each suction head 2, 2 is mounted on the central portion of each of the elongated rod-shaped joining support portions 5, 5, and the two ends of the two joining support portions 5, 5 are respectively mounted on two beam portions 6, 6.

[0049] The two ends of the two beam sections 6, 6 are fixed to the outer sides of the two opposing side walls 4a, 4b of the lower cup body 4, respectively, and are attached to two conveyor belts 7, 7 arranged along the side walls 4a, 4b. Each conveyor belt 7, 7 is wound around two rollers 8 that are a set of 1. Driven by the drive mechanism 9, each conveyor belt 7, 7 moves in the X direction, thereby causing the beam sections 6, 6 to move in the X direction as well, and the connecting support sections 5, 5 supported on the beam sections 6, 6 to move in the X direction.

[0050] Additionally, the roller 8 and drive mechanism 9 on one side are supported by side plate 21. The roller 8 on the other side is supported by side plate 22. The side plates 21 and 22 can move up and down via lifting mechanism 23. That is, through the operation of lifting mechanism 23, conveyor belts 7 can move in the Z direction, and the connecting support parts 5 move accordingly in the Z direction.

[0051] Furthermore, annular upper cups 31 for suppressing the spread of cleaning fluid are provided in the joint support portions 5, 5 and the beam portions 6, 6. Therefore, the upper cups 31 move in the X and Z directions along with the movement of the joint support portions 5, 5 and the beam portions 6, 6.

[0052] An opening 31a with a diameter larger than that of the wafer W is formed on the upper surface of the upper cup body 31. Through the opening 31a, the wafer W can be transferred between the transport mechanism of the coating and developing apparatus and the suction head 2, 2 or the rotating suction cup 3.

[0053] The rotary chuck 3 will now be described. The rotary chuck 3 is configured to horizontally hold the central portion of the back side of the wafer W and is capable of rotating about a vertical axis. The rotary chuck 3 is formed in the shape of a circular plate and is positioned between two substantially parallel suction heads 2, 2. The areas of the back side of the wafer W supported by each substrate holding portion (suction heads 2, 2, and rotary chuck 3) do not overlap. Figure 2 As shown, the rotary suction cup 3 is connected to the drive mechanism 32 via a rotary lifting shaft 3b, and the rotary suction cup 3 is configured to be able to rotate and lift via the drive mechanism 32. In addition, like the suction head 2, the rotary suction cup 3 is also connected to a suction tube (not shown), and functions as a vacuum suction cup that uses the suction hole (not shown) on its upper surface to suction and hold the wafer W.

[0054] On the side of the rotary suction cup 3, the support pin 33a connected to the lifting mechanism 33 is configured to support the back of the wafer W and make it liftable, so that the wafer W can be transferred from the suction head 2, 2 or the rotary suction cup 3 to the conveying mechanism through the cooperation with the external conveying mechanism.

[0055] Furthermore, an air knife 34 is provided around the rotary chuck 3 and the support pin 33a, surrounding the aforementioned device. The air knife 34 is, for example, a cylindrical surrounding member with a gas injection port (not shown) formed circumferentially at its upper end, spraying, for example, compressed air towards the back of the wafer W. For instance, the air knife 34 is composed of a double-layered cylinder, allowing gas supplied from a supply unit (not shown) to be supplied to the injection port via the hollow space between the two cylinders. This air knife 34 serves to blow the cleaning fluid on the back of the wafer W to the outside of the cylinder to dry it, so that the surface of the rotary chuck 3 and the back of the wafer W supported by the rotary chuck 3 are in contact with each other in a dry state.

[0056] An exhaust pipe 51 for venting the airflow within the substrate cleaning device 1 and a drain pipe 52 for draining the cleaning fluid retained within the lower cup body 4 are provided at the bottom 40 of the lower cup body 4. Furthermore, the opening of the exhaust pipe 51 is covered by an inner cup body 53 of a ring-shaped cup body installed around the air knife 34, so that the cleaning fluid dripping from above does not directly enter the exhaust pipe 51.

[0057] A blow nozzle 54 is disposed above the upper cup body 31. After the cleaning of the wafer W is completed, it blows compressed air or the like from above to the vicinity of the outer periphery of the wafer W to assist in the drying of the remaining cleaning fluid. In addition, a cleaning fluid nozzle 55 is disposed outside the air knife 34. It is used together with the cleaning fluid nozzle 11 disposed in the cleaning mechanism 10 described later to supply cleaning fluid to the back side of the wafer W.

[0058] Here, the height position of wafer W will be explained. As described later, wafer W is transferred from an external transport mechanism to suction heads 2, 2, and while held on suction heads 2, 2, it is moved towards... Figure 2 Moving in the right X direction as shown, cleaning is performed on the central portion of the back side of the wafer W. Figure 2The cleaning position is such that the back side of the wafer W is located above the front end of the air knife 34. When the wafer W moves in the X direction while being held in the state of the adsorption head 2, 2, the back side of the wafer W does not interfere with the air knife 34.

[0059] The cleaning mechanism 10 for cleaning the back side of wafer W will now be described. The cleaning mechanism 10 is also as follows... Figure 3 As shown, for example, a rotating platform 12 is formed of a circular plate. The rotating platform 12 is configured to face the wafer W held in the adsorption head 2 or the rotating chuck 3. On the upper surface of the rotating platform 12, as... Figure 3 As shown, a central cleaning component 60 and a peripheral cleaning component 70 are provided. In addition, a plurality of the aforementioned cleaning fluid nozzles 11 are provided on the upper surface of the rotating base 12.

[0060] The rotating base 12 is configured to rotate about a vertical axis via a rotation shaft 13 located on its rear side and a drive mechanism 14. For example, the rotation shaft 13 is located at the center of the rotating base 12. Therefore, when viewed from above, the center of the rotating base 12 coincides with the center of the rotation shaft 13, which becomes the rotation center. In this example, the rotating mechanism is formed by the rotating base 12, the rotation shaft 13, and the drive mechanism 14.

[0061] like Figure 3 As shown, the central cleaning component 60 has a support portion 61 on its lower surface side, which is supported by a support body 62. The support body 62 is movable and rotatable via a drive mechanism 63. The central cleaning component 60 may be made of, for example, PVA, but is not limited to this.

[0062] The contact area of ​​the central cleaning component 60 that contacts the wafer, such as Figure 4 The image shows a fan shape (a so-called arcuate triangle). More specifically, the top of the central cleaning unit 60, configured to be fan-shaped when viewed from above during cleaning, is located at the center P of the wafer W held by the adsorption heads 2, 2; however, the central angle θ of the fan shape is formed as a 54-degree fan. This is based on the following understanding.

[0063] In other words, when cleaning a wafer by rotating a conventional circular brush around its center, uneven in-plane removal rates occur, as previously explained. The reason for this is that the circumference of the circular brush varies depending on its location. Specifically, the circumference is highest along the rotational path through the center of the brush, decreasing towards the ends and reaching its lowest point near the ends. In practical verification, it was found that high impurity removal rates were observed in areas where the brush maintained a circumference of 15% or higher. Therefore, ensuring a circumference of 15% or higher across the entire brush area improves the uniformity of in-plane removal rates.

[0064] Based on the above description, in order to ensure a perimeter ratio of 15% across the entire contact area of ​​the central cleaning component 60 in contact with the wafer, the central angle θ of the sector is set to 360 degrees × 15% = 54 degrees. From this perspective, the central angle θ of the sector-shaped central cleaning component 60 in this embodiment is, for example, set to 54 degrees. Of course, to ensure a perimeter ratio of more than this, the central angle θ can be set to 54 degrees or more.

[0065] On the other hand, the surrounding cleaning components 70, such as Figure 3 As shown, the lower side is supported by a support portion 71, which in turn is supported by a support body 72. The support body 72 is movable via a drive mechanism 73. The peripheral cleaning component 70 may be made of materials such as PVA, but is not limited to this.

[0066] Furthermore, the contact area of ​​the peripheral cleaning component 70 that contacts the wafer, such as Figure 5 The diagram shows a sector. In this case, the sector, as illustrated, is a shape formed by the two radii of a circle and the arc between them. Furthermore, during the periphery cleaning of the wafer W, the wafer W is held by the rotating chuck 3, and the center of the central angle θ is configured to coincide with the center P of the wafer W. To ensure the aforementioned circumference ratio of 15%, the central angle θ is set to 54 degrees.

[0067] In the above substrate cleaning device 1, as shown in Figure 2 A control unit 100 is provided. The control unit 100 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores programs for controlling the following cleaning processes performed on the wafer W in the substrate cleaning apparatus 1. Furthermore, the program storage unit also stores programs for controlling the operation of drive systems for various processing devices, transport devices, etc., in a substrate processing system equipped with this substrate cleaning apparatus 1. In addition, the above-mentioned programs can also be recorded on a computer-readable storage medium and installed from that storage medium onto the control unit 100.

[0068] The substrate cleaning apparatus 1 of the embodiment is configured as described above. The following description will explain the use of this substrate cleaning apparatus 1 to clean the back side of the wafer W. As described above, the substrate cleaning apparatus 1 includes a central cleaning member 60 that contacts and cleans the central portion of the back side of the wafer W, and a peripheral cleaning member 70 that contacts and cleans the peripheral portion of the back side of the wafer W. These two cleaning members can clean the entire back side of the wafer W. Furthermore, typically, the central portion of the back side of the wafer W is cleaned, followed by the peripheral portion.

[0069] That is, firstly, such as Figure 6 As shown, with the wafer W held by the suction heads 2, 2, the rotating suction cup 3 descends, and then the conveyor belts 7, 7 move, as shown. Figure 7As shown, the wafer W is moved in the X direction to the central cleaning position. Simultaneously, the rotating stage 12 is rotated, causing the central cleaning component 60 to move to, for example... Figure 4 The specified position is shown. Then, the drive mechanism 63 is activated, raising the central cleaning component 60 until it contacts the back surface of the wafer W. Simultaneously, cleaning fluid is supplied to the back surface of the wafer W from the cleaning fluid nozzle 11, while the central cleaning component 60 rotates. At this time, the center of rotation of the central cleaning component 60 is as shown... Figure 4 As shown, it aligns with the center P of the wafer W.

[0070] In this way, Figure 4 The central region inside the double-dotted lines is cleaned by the central cleaning unit 60, removing impurities, particles, etc., adhering to the back side of the wafer W. In this case, the central cleaning unit 60 is fan-shaped with a circumference of 15%, thus achieving uniform removal across the entire central region inside the double-dotted lines.

[0071] At the end of cleaning in the central region on the back side of wafer W, the central cleaning unit 60 descends, and then the drive conveyor belts 7, 7, as... Figure 8 The wafer W is moved to the peripheral cleaning position in the direction of the arrow in the figure. The peripheral cleaning position of the wafer W is the position where the center P of the wafer W is held and held at the center of the rotating chuck 3. In addition, the rotating base 12 is rotated to move the peripheral cleaning component 70 to the predetermined peripheral cleaning position.

[0072] When the wafer W is moved to the peripheral cleaning position, such as Figure 9 As shown, the rotating suction cup 3 is raised to hold and hold the wafer W, causing the wafer W to rotate at a predetermined speed. Then, the peripheral cleaning component 70 is raised to abut and press against the peripheral position of the back side of the wafer W. Thus, Figure 5 The peripheral area outside the double-dotted lines is cleaned by the peripheral cleaning unit 70, removing impurities, particles, etc., adhering to the back side of the wafer W. In this case, the peripheral cleaning unit 70 is fan-shaped with a circumference of 15%, thus achieving uniform removal across the entire central area inside the double-dotted lines.

[0073] In the central cleaning component 60, such as Figure 10The groove 64 can be formed as shown. In this example, multiple grooves 64 are formed parallel to each other in an obliquely intersecting manner. This allows the contact surface of the central cleaning member 60 that contacts the wafer W to be divided, and each divided contact surface can be pressed evenly onto the wafer W, resulting in more uniform removal as a whole. Furthermore, the cleaning fluid easily penetrates into the formed grooves 64, thus allowing the cleaning fluid to reach the central portion of the central cleaning member 60 in a completely distributed manner, resulting in the cleaning effect of the cleaning fluid being enjoyed without any omissions in the entire contact area of ​​the central cleaning member 60.

[0074] Furthermore, from the same perspective, such as Figure 11 As shown, a groove 74 identical to the groove 64 can also be formed in the peripheral cleaning member 70. This allows the contact surface of the peripheral cleaning member 70 with the wafer W to be divided into smaller sections, enabling the peripheral cleaning member 70 as a whole to press evenly against the wafer W, resulting in more uniform removal. Furthermore, the cleaning fluid easily penetrates into the formed groove 74, allowing the cleaning fluid to reach the central portion of the peripheral cleaning member 70 in a completely distributed manner, ensuring that the entire contact area of ​​the peripheral cleaning member 70 receives the cleaning effect of the cleaning fluid without any omissions.

[0075] in addition, Figure 11 The groove 74 of the peripheral cleaning component 70 shown is larger than the groove 64 of the central cleaning component 60 described above. This is because the peripheral cleaning component 70 has a wider contact area with the object being cleaned compared to the central cleaning component 60, therefore, it is more necessary to ensure that the cleaning fluid covers the entire peripheral cleaning component 70. Furthermore, as mentioned above, the number of grooves can be increased without increasing the width of the groove 74 itself.

[0076] Furthermore, as described above, when the central cleaning component 60 and the peripheral cleaning component 70 form grooves 64 and 74, the actual contact area between the central cleaning component 60 and the back surface of the wafer W is correspondingly reduced. Therefore, it is sometimes impossible to ensure the aforementioned 15% perimeter ratio. In this case, increasing the center angle θ of the fan-shaped central cleaning component 60 and the peripheral cleaning component 70 from 54 ensures a 15% perimeter ratio.

[0077] Furthermore, in the above example, the shape is configured such that the center of any sector of the central cleaning component 60 and the peripheral cleaning component 70 coincides with the center P of the wafer W, but it is not limited to this. For example, regarding the central cleaning component 60, such as... Figure 12As shown, a central cleaning member 60A can also be shaped such that the center Q of the sector is offset relative to the center P of the wafer W within the contact area containing the center P of the wafer W. This allows for the reliable removal of impurities near the center P of the wafer W. In this case, the center angle θ can be larger than 54 degrees, and can be smaller than 54 degrees while ensuring the required perimeter ratio of 15% or more.

[0078] Additionally, regarding the surrounding cleaning components 70, such as Figure 13 As shown, the shape can also be set such that the center R of the sector is offset from the center P of the wafer W, for example, on the outer side of the wafer W. In this case, it is effective to ensure a perimeter ratio of 15% and to improve the removal rate of the central portion of the wafer W. Furthermore, in such a case, in order to maintain sufficient removal performance of impurities, etc., while miniaturizing the peripheral cleaning unit 70 as much as possible, the central angle θ of the sector can be made smaller than 54 degrees while ensuring a perimeter ratio of 15% or more.

[0079] Therefore, when the contact area of ​​either the central cleaning component 60 or the peripheral cleaning component 70 with the wafer W is a region that extends radially from the center of the wafer W to the periphery, the circumference ratio can be increased throughout the contact area compared to a conventional circular cleaning brush. This, in turn, improves the uniformity of impurity removal rate within the wafer W surface. Furthermore, even if the central cleaning component 60 and the peripheral cleaning component 70 are not in that shape, but at least one cleaning component adopts that radially extending shape from the center of the wafer W to the periphery, the uniformity of the removal rate within the surface can be improved even when used in combination with a conventional circular brush.

[0080] Furthermore, in the above embodiment, the case of cleaning the back side of the wafer W was described as an example. However, the technology of the present invention can also be applied to cases such as cleaning the surface of the wafer W after CMP treatment.

[0081] Furthermore, the aforementioned central cleaning component 60, central cleaning component 60 with groove 64, central cleaning component 60A, peripheral cleaning component 70, and peripheral cleaning component 70 with groove 74 can be used in any combination. In addition, when combined, it is preferable that the length of the outer arc portion of the central cleaning component 60, the central cleaning component 60 with groove 64, and the central cleaning component 60A is the same as the length of the inner arc portion of the peripheral cleaning component 70, the peripheral cleaning component 70 with groove 74, and the peripheral cleaning component 70A. However, it is also possible, for example, that the outer arc portion of the central cleaning component 60, the central cleaning component 60 with groove 64, and the central cleaning component 60A is the size and shape of the contact area exposed by the peripheral cleaning component 70, the peripheral cleaning component 70 with groove 74, and the peripheral cleaning component 70A.

[0082] The embodiments disclosed herein are illustrative and not restrictive in all respects. The above embodiments can be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0083] For example, the rotating base 12 described above can also be configured as an arm-shaped base or a sliding base. In short, any structure that can move the central cleaning component 60 and the peripheral cleaning component 70 to a predetermined central cleaning position and peripheral cleaning position is acceptable.

Claims

1. A substrate cleaning apparatus, characterized in that: The cleaning component can be brought into contact with the back side of a circular substrate, causing the substrate to rotate relative to the cleaning component to clean the back side. The cleaning components include a central cleaning component that contacts the central portion of the back surface of the substrate and a peripheral cleaning component that contacts the peripheral portion of the back surface of the substrate. The contact areas of the central cleaning component and the peripheral cleaning component that contact the back surface have a fan-shaped shape when viewed from above, extending radially from the center side of the substrate to the periphery side. The substrate cleaning device includes: An adsorption head that horizontally adsorbs and holds the back of the substrate in an area that does not overlap with the central portion, thereby horizontally adsorbing and holding the substrate; and A rotating suction cup horizontally adheres to and holds the central portion of the back side of the substrate, thereby horizontally adhering and holding the substrate, and is configured to rotate about a vertical axis. The substrate cleaning device is configured as follows: The central portion of the back side of the substrate is cleaned by the central cleaning component while the substrate is held by the adsorption head. The peripheral portion of the back side of the substrate is cleaned by the peripheral cleaning component while the substrate is held by the rotating suction cup.

2. The substrate cleaning apparatus as described in claim 1, characterized in that: The perimeter of the cleaning component is 15% or more.

3. The substrate cleaning apparatus as described in claim 1 or 2, characterized in that: A groove is formed in the contact area of ​​the cleaning component.

4. The substrate cleaning apparatus as described in claim 1 or 2, characterized in that: Grooves are formed in the contact areas of the central cleaning component and the peripheral cleaning component where they contact the substrate. The groove of the peripheral cleaning component is larger than the groove of the central cleaning component.

5. A substrate cleaning method, characterized in that: The cleaning component is brought into contact with the back side of a circular substrate, causing the substrate to rotate relative to the cleaning component to clean the back side. The cleaning component has a central cleaning component that contacts the central portion of the substrate and a peripheral cleaning component that contacts the peripheral portion of the substrate. The contact areas of the central cleaning component and the peripheral cleaning component have a fan-shaped shape when viewed from above, extending radially from the center of the substrate to the periphery. The substrate cleaning method includes: While holding the substrate horizontally by adsorbing and holding the area of ​​the back side of the substrate that does not overlap with the central portion, the central cleaning member is brought abutted against the central portion of the back side of the substrate, and the central cleaning member is rotated relative to the substrate to clean the central portion of the substrate using the central cleaning member; and Then, while holding the substrate horizontally by using a rotating suction cup to hold the central portion of the back side of the substrate, the peripheral cleaning member is brought against the central portion of the back side of the substrate, and the rotating suction cup is rotated about a vertical axis, causing the peripheral cleaning member to rotate relative to the substrate, and the peripheral cleaning member is used to clean the peripheral portion of the substrate.

6. The substrate cleaning method as described in claim 5, characterized in that: The central portion of the fan shape is off-center relative to the center of the substrate.

7. The substrate cleaning method as described in claim 5, characterized in that: The central portion of the fan shape is off-center relative to the center of the substrate.

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