Micromechanical component for a stress sensor and method for manufacturing a micromechanical component for a stress sensor

Abstract

The invention relates to a micromechanical component for a stress sensor, having a first substrate (10) with a first substrate surface (10a), a second substrate (12) with a second substrate surface (12a) and an evaluation electronics (20) configured at and / or in the second substrate (12), wherein the first substrate (10) is fixed at the second substrate (12) by means of at least one electrical connection (22) formed by means of a metal bonding method, which is configured in an intermediate volume (14) between the first substrate surface (10a) and the second substrate surface (12a), wherein at least one electrode (16, 16a, 16b, 62) and at least one counter electrode (18a, 18b, 18c) are arranged in the intermediate volume (14), wherein the at least one electrode (16, 16a, 16b, 62) and / or the at least one counter electrode (18a, 18b, 18c) are electrically connected at the evaluation electronics (20) by means of the at least one electrical connection (22) formed by means of a metal bonding method.

Description

Technical Field

[0001] This invention relates to a micromechanical component for a stress sensor. It also relates to a sensor device and an apparatus. Furthermore, this invention relates to a method for manufacturing a micromechanical component for a stress sensor. Background Technology

[0002] Sensor devices for measuring mechanical stresses occurring therein are known from the prior art. For example, WO 2018 / 148503 A1 describes a sensor consisting of a glass substrate or a silicon substrate and (other) silicon substrates, wherein a hermetically sealed intermediate volume is constructed between the two substrates by etching grooves into the (other) silicon substrate and fixing the two substrates together. The grooves are etched into the (other) silicon substrate such that at least one curved region is constructed in the (other) silicon substrate, wherein the curvature of the at least one curved region can be detected by means of at least one sensitive element (e.g., by means of a piezoresistive element or a Wheatstone bridge). Summary of the Invention

[0003] This invention provides a micromechanical component for a stress sensor, a sensor device, an apparatus, and a method for manufacturing the micromechanical component for a stress sensor.

[0004] Advantages of the present invention

[0005] This invention proposes the possibility of realizing a capacitive stress sensor with an extremely small structure, which can be manufactured with satisfactory quality and relatively low operating overhead. The advantageous integration of the corresponding analysis and processing circuitry into the second substrate of the micromechanical component according to the invention also contributes to the miniaturization of the capacitive stress sensor thereby realized. It is explicitly stated here that the manufacture of the micromechanical component according to the invention is relatively simple, wherein other common techniques can be used, in addition to metal wafer bonding performed to form at least one electrical contact. Therefore, the manufacturing cost of the micromechanical component according to the invention, or a sensor device or apparatus equipped with such a micromechanical component, is relatively low.

[0006] Furthermore, the micromechanical components realized by means of this invention are relatively compact. Their compactness, relatively small structural size, and low manufacturing cost also enable the use of capacitive stress sensors implemented therein in array form to spatially address stress distribution within a housing or typically on the surface of a device (such as a mobile device). Additionally, the high compactness of the micromechanical components according to the invention allows for use in environments exposed to high loads. Moreover, the relatively small structural size of the micromechanical components according to the invention also enables their use in applications with severely limited structural space.

[0007] In an advantageous embodiment of the micromechanical component, at least one electrode is disposed on the surface of a first substrate and / or at least one first intermediate layer that at least partially covers the surface of the first substrate, and is electrically connected to the analysis and processing circuitry via at least one electrical contact formed by means of a metal bonding method. Thus, the electrical connection from at least one electrode to the analysis and processing circuitry is achieved in a relatively labor-saving manner.

[0008] Specifically, at least one electrode can be structured from a semiconductor capping layer and / or a metal capping layer disposed on the surface of a first substrate and / or at least one first intermediate layer, wherein, in addition to at least one electrode, at least one seismic mass is also structured from the semiconductor capping layer and / or the metal capping layer. Therefore, the embodiments of the micromechanical components described herein can integrate other sensor types (e.g., inertial sensors) using at least one seismic mass into the micromechanical components in a space-saving and cost-effective manner. Thus, the embodiments of the micromechanical components described herein are particularly capable of realizing a sensor device that can be used as both a capacitive stress sensor and an inertial sensor.

[0009] Preferably, at least one counter electrode is disposed on the surface of the first substrate and / or at least one first intermediate layer, and / or disposed on the surface of the second substrate and / or at least one second intermediate layer that at least partially covers the surface of the second substrate. Therefore, at least one electrode and at least one counter electrode can be well integrated into the intermediate volume between the surface of the first substrate and the surface of the second substrate.

[0010] For example, at least one electrode and at least one counter electrode can be arranged on the surface of a first substrate and / or at least one first intermediate layer such that at least one counter electrode is located between at least one electrode and the surface of the first substrate. Therefore, it is easy to achieve the following arrangement of at least one electrode and at least one counter electrode: the spacing between each electrode and the counter electrode closest to it is relatively small.

[0011] Preferably, at least one electrode and at least one counter electrode are arranged on the surface of the first substrate and / or at least one first intermediate layer such that at least one electrode is positioned in a spatial direction oriented parallel to the surface of the first substrate relative to the counter electrode closest to it. As described in more detail below, the embodiments of the micromechanical components described herein are particularly suitable for realizing capacitive stress sensors that have high sensitivity / detection accuracy for stress components oriented parallel to the surface of the first substrate.

[0012] The aforementioned advantages are also achieved through sensor devices with such micromechanical components.

[0013] The above advantages are also guaranteed in devices with corresponding micromechanical components.

[0014] Furthermore, the implementation of the corresponding manufacturing method for the micromechanical component used in the stress sensor also offers the aforementioned advantages, wherein the manufacturing method can be extended according to the described embodiment of the micromechanical component. Preferably, in addition to at least one electrical contact portion, an intermittent or continuous bonding frame is formed within the intermediate volume by means of a metal bonding method. Therefore, the metal bonding method implemented during the manufacturing process can be used in many ways. Attached Figure Description

[0015] Other features and advantages of the invention are described below with reference to the accompanying drawings. The drawings show:

[0016] Figure 1a and 1b A schematic diagram showing a first embodiment of the micromechanical component;

[0017] Figures 2 to 9 Schematic diagrams illustrating other embodiments of micromechanical components;

[0018] Figure 10 A schematic diagram showing a first embodiment of the device;

[0019] Figure 11 A schematic diagram showing a second embodiment of the device;

[0020] Figure 12 A flowchart illustrating an implementation method of the manufacturing process is shown. Detailed Implementation

[0021] Figure 1a and 1b A schematic diagram showing a first embodiment of the micromechanical component is provided.

[0022] exist Figure 1a and 1bThe micromechanical component schematically shown includes a first substrate 10 having a first substrate surface 10a and a second substrate 12 having a second substrate surface 12a. The first substrate 10 and / or the second substrate 12 may be, for example, semiconductor substrates, such as, in particular, silicon substrates. The first substrate 10 and the second substrate 12 are arranged / oriented relative to each other such that the first substrate surface 10a of the first substrate 10 is oriented toward the second substrate 12, and the second substrate surface 12a of the second substrate 12 is oriented toward the first substrate 10. An intermediate volume 14 exists between the first substrate surface 10a and the second substrate surface 12a. At least one electrode 16 and at least one counter electrode 18a and 18b are arranged / constructed within the intermediate volume 14. Furthermore, an analysis processing circuit 20 is constructed at and / or within the second substrate 12, and the at least one electrode 16 and at least one counter electrode 18a and 18b are electrically connected to the analysis processing circuit such that the analysis processing circuit 20 can determine at least one parameter relating to at least one voltage applied between the at least one electrode 16 and the at least one counter electrode 18a and 18b. The analysis and processing circuit 20 may be designed, for example, to extract the voltage or capacitance values ​​applied between at least one electrode 16 and at least one counter electrode 18a and 18b as at least one parameter.

[0023] As in Figure 1a and 1b As can be seen, the first substrate 10 is fixed to the second substrate 12 by means of at least one electrically conductive portion 22 constructed within the intermediate volume 14. The at least one electrically conductive portion 22 should be understood as an electrically conductive portion 22 formed by a metal bonding method. For example, a eutectic bonding method, particularly a eutectic bonding method using aluminum and germanium, can be implemented as a metal bonding method. In particular, based on the material composition of the at least one electrically conductive portion 22, it can generally be seen that the at least one electrically conductive portion 22 is formed by a metal bonding method. The at least one electrically conductive portion 22 can, for example, be composed of a mixture of aluminum and germanium, respectively. Furthermore, at least one electrode 16 and / or at least one counter electrode 18a and 18b are electrically connected to the analysis and processing circuit 20 by means of the at least one electrically conductive portion 22 formed by a metal bonding method, so that the at least one electrically conductive portion 22 is not only used for mechanically connecting the substrates 10 and 12 to each other. Therefore, the at least one electrically conductive portion 22 can perform multiple functions. The at least one electrically conductive portion 22 formed by a metal bonding method can also be understood as a chip-to-chip connection.

[0024] Therefore, the micromechanical component constructed with at least one advantageous electrical contact 22 can be manufactured relatively easily by: fabricating the substrate 10 and its coating on the substrate surface 10a using surface micromachining methods, and fabricating the substrate 12 and its coating on the substrate surface 12a using standard semiconductor methods (e.g., CMOS processes), and then vertically connecting them to each other by a metal bonding method that forms at least one electrical contact 22. Miniaturization of the micromechanical component can be easily achieved in this way. Similarly, the micromechanical component can be manufactured at a relatively low manufacturing cost. The micromechanical component also exhibits high compactness due to the arrangement of at least one electrode 16 and at least one counter electrode 18a and 18b within the intermediate volume 14.

[0025] Advantageously, in addition to at least one electrical contact 22, intermittent or continuous bonding frames 24 can be formed within the intermediate volume 14 using a metal bonding method. It can also be seen from the material composition of the bonding frame 24 that the bonding frame 24, together with at least one electrical contact 22, is manufactured using a metal bonding method. The bonding frame 24 can, for example, be composed of a mixture of aluminum and germanium. Therefore, the bonding frame 24 can still be manufactured as a protective structure for components arranged / constructed in the intermediate volume 14 for micromechanical components, without increasing the overhead of manufacturing micromechanical components using a bonding method.

[0026] At least one electrode 16 is disposed on at least one first intermediate layer 26 that at least partially covers the surface 10a of the first substrate. The at least one first intermediate layer 26 may be, for example, at least one insulating layer, such as, in particular, a silicon oxide layer and / or a silicon nitride layer. Advantageously, the at least one electrode 16 can be structured from a semiconductor layer and / or a metal layer 28 disposed on the at least one first intermediate layer 26. The semiconductor layer and / or metal layer 28 may be, for example, an aluminum layer or a silicon layer. Thus, aluminum may be used, for example, as a material for the semiconductor layer and / or metal layer 28 for forming at least one electrical contact 22 (through which at least one electrode 16 is electrically connected to the analysis processing circuit 20) and possibly also for forming the bonding frame 24.

[0027] At least one counter electrode 18a and 18b may be disposed on at least one second intermediate layer 30 that at least partially covers the surface 12b of the second substrate. The at least one second intermediate layer 30 may include at least one insulating layer 32 in which metal layers 20a of the analysis processing circuit 20 and metal vias 20b of the analysis processing circuit 20 are embedded, these vias connecting the metal layers 20a of the analysis processing circuit 20 to each other. Therefore, electrical connections from at least one counter electrode 18a and 18b to the analysis processing circuit 20 can be readily achieved. The at least one insulating layer 32 may, for example, be at least one silicon oxide layer and / or at least one silicon nitride layer. Additionally, the analysis processing circuit 20 may also include at least one doped region 34 within the second substrate 12, which is well-suited for implementing transistor circuitry.

[0028] The analysis processing circuitry 20 can be electrically connected to a redistribution plane 38 formed on the back side of the second substrate 12, oriented away from the second substrate surface 12a, using at least one through-silicon via (TSV) 36. The redistribution plane 38 can be separated from the back side of the substrate 20 using at least one passivation layer 40. In this case, micromechanical components can be easily attached to other devices 44 (e.g., printed circuit boards 44) using at least one solder ball 42 fixed to the redistribution plane 38.

[0029] exist Figure 1a and 1b In the example, the micromechanical component has, for instance, a first pair of electrodes 18a and a second pair of electrodes 18b. Specifically, the second pair of electrodes 18b, with a ring-like configuration, may surround the first pair of electrodes 18a. As based on... Figure 1a and 1b As can be seen from the comparison, deformation of the printed circuit board 44 causes a change in the first gap distance d1 between electrode 16 and the first pair of electrodes 18a, and a change in the second gap distance d2 between electrode 16 and the second pair of electrodes 18b. Therefore, deformation of the printed circuit board 44 can be easily detected. For example, the capacitance difference ΔC between the first capacitance C1 between electrode 16 and the first pair of electrodes 18a, and the second capacitance C2 between electrode 16 and the second pair of electrodes 18b, can be used as a measurement signal for detecting / analyzing deformation of the printed circuit board 44. This measurement signal M can be reliably processed using known analysis and processing methods. Therefore, the micromechanical components described herein are advantageously suitable for capacitive stress sensors.

[0030] Figure 2 A schematic diagram showing a second embodiment of the micromechanical component is provided.

[0031] exist Figure 2 In the micromechanical component schematically shown, the semiconductor layer and / or metal layer 28 is thickened by depositing at least one semiconductor material and / or metal to form a semiconductor halble-and / or metallage 46. The semiconductor halble-and / or metallage 46 can, in particular, be composed of polycrystalline silicon. Therefore, at least one electrode 16 can also be structured from such a semiconductor halble-and / or metallage 46. Before thickening the semiconductor layer and / or metal layer 26 to form the semiconductor halble-and / or metallage 46, at least one additional intermediate layer 47, preferably at least one additional insulating layer (e.g., especially a silicon oxide layer and / or a silicon nitride layer), can also be deposited. With the aid of at least one additional insulating layer, at least a portion of the semiconductor halble-and / or metallage 46 can be electrically insulated relative to at least one electrode 16.

[0032] also, Figure 2 The micromechanical component has a (planar) solder joint 48 instead of at least one solder ball 42. Therefore, the micromechanical component can be arranged at a relatively small distance from the printed circuit board 44, whereby stress can be coupled into the micromechanical component particularly well from the printed circuit board 44. Preferably, the distance between the micromechanical component and the circuit board 44 is in the range of less than 100 μm, more preferably in the range of 10 μm to 60 μm. Optionally, at least one (non-conductive) filler material 50 (underfill material) can also be filled in the intermediate gap between the micromechanical component and the printed circuit board 44. The connection between the micromechanical component and the printed circuit board 44 can be strengthened by at least one filler material 50, which has a positive effect on the sensitivity of the micromechanical component. Additionally, the robustness of at least one solder joint 48 can be improved. Similarly, the decomposition of at least one solder joint 48 can be prevented by at least one filler material 50. Furthermore, the at least one solder joint 48 can be protected from the infiltration of particles and moisture by at least one filler material 50.

[0033] about Figure 2 Other features and advantages of the micromechanical components are described in reference to the previously described embodiments.

[0034] Figure 3 A schematic diagram showing a third embodiment of the micromechanical component is shown.

[0035] exist Figure 3 In the micromechanical component schematically shown, an air inlet / gas inlet 52 is also achieved by means of at least one discontinuity constructed in the bonding frame 24. Alternatively or supplementarily, as in Figure 3As schematically illustrated by arrow 54, at least one additional air / gas inlet can also be implemented via a trench structured through the first substrate 10. The presence of at least one air / gas inlet 52 prevents parasitic effects of ambient pressure fluctuations in the micromechanical component's environment on the measurement signal M of the micromechanical component. Even when the thickness of the micromechanical component perpendicular to the substrate surfaces 10a and 12a is relatively small, pressure fluctuations can be compensated for by at least one air / gas inlet 52 to avoid conventional interference effects caused by ambient pressure fluctuations.

[0036] about Figure 3 Other features and advantages of the micromechanical components are described in reference to the previously described embodiments.

[0037] Figure 4 A schematic diagram showing a fourth embodiment of the micromechanical component is provided.

[0038] exist Figure 4 In the micromechanical components, at least one counter electrode 18a and 18b are also arranged on at least one first intermediate layer 26, in such a way that at least one counter electrode 18a and 18b, together with at least one electrode 16, are structured by a semiconductor capping layer and / or a metal capping layer 46. At least one counter electrode 18a and 18b can be constructed / structured between at least one electrode 16 and the first substrate surface 10a by means of a perforation of at least one electrode 16. Nevertheless, at least one electrode 16 can also be fixed to at least one first intermediate layer 26 by constructing an anchoring region 55. By combining the release of at least one electrode 16 with the connection of the at least one electrode through its anchoring region 55, a particularly large spacing variation between at least one electrode 16 and at least one counter electrode 18a and 18b can be obtained, thereby improving the signal hub of the measurement signal M and thus improving the signal-rausch-abstand of the measurement signal M. Furthermore, in such an arrangement of at least one counter electrode 18a and 18b, at least one counter electrode 18a and 18b can also be connected to the analysis and processing electronics 20 without any problems via at least one electrical contact 22.

[0039] As in Figure 4It can also be seen that the back side of the first substrate 10, oriented away from the first substrate surface 10a, can also be adhered to the surface of the device 58 by means of the adhesive layer 56. By means of back-side thinning of the first substrate 10 and / or the second substrate 12, the sensitivity of the micromechanical component can be improved after it is adhered to the device 58. In this case, electrical connection between the micromechanical component and the printed circuit board 44 can be achieved, for example, by at least one flexible cable 60 fixed to the solder ball 42.

[0040] about Figure 4 Other features and advantages of the micromechanical components are described in reference to the previously described embodiments.

[0041] Figure 5 A schematic diagram showing a fifth embodiment of the micromechanical component is shown.

[0042] exist Figure 5 The micromechanical component schematically shown has a first pair of electrodes 18a (arranged on at least one first intermediate layer 26) structured together with at least one electrode 16 by a semiconductor capping layer and / or a metal capping layer 46, and a second pair of electrodes 18b arranged on at least one second intermediate layer 30. Thus, the first pair of electrodes 18a is arranged on a first side of at least one electrode 16, while the second pair of electrodes 18b is located on a second side of at least one electrode 16.

[0043] about Figure 5 Other features and advantages of the micromechanical components are described in reference to the previously described embodiments.

[0044] Figure 6 A schematic diagram showing a sixth embodiment of the micromechanical component is shown.

[0045] As Figure 5 An extension of the implementation method, in Figure 6 The micromechanical component schematically shown has two counter electrodes 18a-1 and 18a-2 structured together with at least one electrode 16 by a semiconductor capping layer and / or a metal capping layer 46 (these two counter electrodes are arranged on at least one first intermediate layer 26) and two counter electrodes 18b-1 and 18b-2 arranged on at least one second intermediate layer 30.

[0046] As in Figure 6 As can be seen, at least one through-silicon contact 36 (TSV) can also pass through the first substrate 10 structure, thereby enabling the micromechanical components to be electrically connected to other devices (e.g., electrically connected to a printed circuit board 44) ​​by means of at least one solder ball 42 disposed on the back side of the first substrate 10 oriented away from the first substrate surface 10a.

[0047] about Figure 6 Other features and advantages of the micromechanical components are described in reference to the previously described embodiments.

[0048] Figure 7 A schematic diagram showing the seventh embodiment of the micromechanical component is shown.

[0049] exist Figure 7 In the micromechanical component shown in top view, electrodes 16a and 16b, the frame structure 62 on which electrodes 16a and 16b are mounted, and counter electrodes 18a and 18a are also structured from semiconductor capping layers and / or metal capping layers 46. Electrodes 16a and 16b are fixedly fixed to the frame structure 62, while counter electrodes 18a and 18a are adjustable relative to the frame structure 62. Additionally, electrodes 16a and 16b and counter electrodes 18a and 18b are arranged such that each electrode 16a and 16b is located in a spatial direction 64a or 64b parallel to the orientation of the first substrate surface 10a, respectively, relative to the counter electrode 18a or 18b closest to it.

[0050] exist Figure 7 The micromechanical components schematically shown are particularly well-suited for use in "lateral" capacitive stress sensors for measuring mechanical stress in at least one spatial direction 64a or 64b oriented parallel to the first substrate surface 10a. At least one first electrode 16a is positioned relative to the nearest counter electrode 18a in the first spatial direction 64a, which is also parallel to the first substrate surface 10a, while at least one second electrode 16b is positioned relative to the nearest counter electrode 18b in the second spatial direction 64b, which is also parallel to the first substrate surface 10a. Advantageously, the first spatial direction 64a is oriented perpendicular to the second spatial direction 64b. In this way, the "lateral" capacitive stress sensor can be sensitive to both spatial directions 64a and 64b.

[0051] Counter electrodes 18a, oriented toward their assigned electrodes 16a in a first spatial direction 64a, are electrically connected to at least one first conductor track 68a via their respective anchor points 66a, which preferably extend along the first spatial direction 64a. Correspondingly, counter electrodes 18b, oriented toward their assigned electrodes 16b in a second spatial direction 64b, are electrically connected to at least one second conductor track 68b via their respective anchor points 66b, which preferably extend along the second spatial direction 64b. The frame structure 62 is connected to another conductor track 68c via another anchor point 66c. Conductor tracks 68a to 68c extend on at least one first intermediate layer 26.

[0052] about Figure 7Other features and advantages of the micromechanical components are described in reference to the previously described embodiments.

[0053] Figure 8 A schematic diagram showing the eighth embodiment of the micromechanical component is shown.

[0054] exist Figure 8 In the micromechanical components schematically shown, all electrodes 16a and 16b, as well as all counter electrodes 18a and 18b, are arranged relatively far from the anchor points 66c of the frame structure 62. Thus, when "lateral" stress occurs, the anchor points 66a and 66b of the counter electrodes 18a and 18b are particularly movable, thereby increasing the signal swing and signal-to-noise ratio of the measurement signal M.

[0055] exist Figure 8 The micromechanical components schematically shown also integrate Figure 4 In one embodiment, at least one additional counter electrode 18c-1 and 18c-2 is structured by a semiconductor capping layer and / or a metal capping layer 46 such that at least one additional counter electrode 18c-1 and 18c-2 are arranged between the frame structure 62 and the first substrate surface 10a. At least one additional counter electrode 18c-1 and 18c-2 are also connected to at least one additional conductor track 68d, thereby enabling the determination of at least one parameter relating to at least one voltage applied between the at least one additional counter electrode 18c-1 and 18c-2 and the frame structure 62. Therefore, Figure 8 The micromechanical components can be used as triaxial capacitive stress sensors.

[0056] about Figure 8 Other features and advantages of the micromechanical components are described in reference to the previously described embodiments.

[0057] Figure 9 A schematic diagram showing the ninth embodiment of the micromechanical component is shown.

[0058] exist Figure 9 The micromechanical components shown are Figure 3An extended embodiment of the present invention further comprises, in addition to at least one electrode 16, a vibrating mass 70 and at least one inertial electrode 72, also structured by a semiconductor capping layer and / or a metal capping layer 46. In this way, an inertial sensor is integrated into a micromechanical component, the vibrating mass 70 of which can be used to detect rotational motion and / or acceleration of the micromechanical component. The vibrating mass 70 can, for example, be configured as an "asymmetric rocker arm," wherein the vibrating mass 70 is configured to be connected to the first substrate 10 via at least one rotational axis (not depicted) extending along the rotational axis 74 of the vibrating mass 70 and has an asymmetric mass distribution relative to the rotational axis 74. In this case, acceleration of the micromechanical component perpendicular to the surface 10a of the first substrate causes tilting motion of the vibrating mass 70 about its rotational axis 74. At least one inertial electrode 72 can be configured as a plate-like electrode.

[0059] The aforementioned measurement signal M can be used in particular to compensate for signal interference determined by stress in inertial sensors through calculation. It is known that mechanical stress has a negative impact on inertial sensors. By measuring mechanical stress through the measurement signal M, this interference effect on the inertial sensor can be largely compensated for.

[0060] All of the aforementioned micromechanical components can be advantageously used in sensor devices. Pressure sensors or resonators can be integrated into all of the aforementioned micromechanical components / their sensor devices, either as alternatives to inertial sensors or in addition to inertial sensors. All of the aforementioned micromechanical components can also be thinned on their backside before operation to improve their sensitivity by thinning at least one of the substrates 10 or 12 of the micromechanical component.

[0061] Furthermore, all of the aforementioned micromechanical components can also be packaged using chip-scale packaging. In addition to the advantages in cost and structural space, chip-scale packaging also offers the benefit of eliminating the need for a molded block, which may cause parasitic stress effects due to its different coefficient of thermal expansion with temperature changes or due to aging effects.

[0062] Figure 10 A schematic diagram of a first embodiment of the device is shown.

[0063] exist Figure 10The device schematically shown is, for example, a mobile device, such as a smartphone or mobile phone. The device has at least one array consisting of a plurality of micromechanical components 76 according to one of the previously described embodiments, wherein each micromechanical component 76 functions as a capacitive stress sensor. Each array of micromechanical components 76 can be arranged on a respective printed circuit board 44. At least one printed circuit board 44 can be mechanically and directly connected to the housing frame 78 of the device, so that when the housing of the device deforms, for example due to lateral pressure applied to the device by a user's hand 80, the micromechanical components 76, acting as capacitive stress sensors, provide their respective measurement signals M. This results in various possibilities of use. For example, it is possible to detect the local intensity / intensity distribution of the force F applied to the housing frame 78.

[0064] The construction of this device as a mobile device should not be interpreted restrictively. The aforementioned micromechanical component 76 can also be integrated into other devices and articles, such as wearable devices, hearing devices, small household appliances, large household appliances, lighting fixtures, interior decorations, and / or furniture. Finally, in many cases, a physical switch can be replaced by the micromechanical component 76, provided that the surface on which the micromechanical component 76 is mounted has sufficient flexibility and the necessary electronic circuitry for voltage supply and communication is available.

[0065] Figure 11 A schematic diagram showing a second embodiment of the device is shown.

[0066] exist Figure 11 In this embodiment, the micromechanical component 76 is directly adhered to the housing frame 78 by an adhesive 82, thereby improving the signal swing of the measurement signal M. Electrical connection of the micromechanical component 76 is achieved via a flexible cable 60, which is connected to the printed circuit board 44 via a connector 84, such as a socket 84.

[0067] about Figure 11 Other features and advantages of the device are described above with reference to the previously described embodiments.

[0068] Figure 12 A flowchart illustrating an implementation method of the manufacturing process is shown.

[0069] All of the above-mentioned micromechanical components can be manufactured using the manufacturing methods described below.

[0070] In method step S1, the first substrate having a first substrate surface is arranged relative to the second substrate having a second substrate surface and the analysis processing circuit constructed in the second substrate and / or the second substrate such that the first substrate surface of the first substrate is oriented toward the second substrate, and the second substrate surface of the second substrate is oriented toward the first substrate.

[0071] Next, as method step S2, a metal bonding method is performed to fix the first substrate to the second substrate. Using the metal bonding method, at least one electrical connection is formed in an intermediate volume (where at least one electrode and at least one counter electrode are arranged) between the surfaces of the first and second substrates, such that at least one electrode and / or at least one counter electrode are electrically connected to the analysis processing circuit via the at least one electrical connection formed by the metal bonding method. The analysis processing circuit is connected to the at least one electrode and at least one counter electrode such that at least one parameter relating to at least one voltage applied between the at least one electrode and at least one counter electrode can be obtained by the analysis processing circuit. Optionally, in method step S2, in addition to the at least one electrical connection, a discontinuous or continuous bonding framework can also be formed in the intermediate volume using the metal bonding method. For example, a eutectic bonding method, particularly a eutectic bonding method used with aluminum and germanium, can be implemented as the metal bonding method.

Claims

1. A micromechanical component (76) for use in a stress sensor, said micromechanical component having: A first substrate (10) having a first substrate surface (10a) and a second substrate (12) having a second substrate surface (12a), and an analysis and processing circuit (20) constructed on and / or in the second substrate, wherein, The first substrate (10) and the second substrate (12) are arranged such that the first substrate surface (10a) of the first substrate (10) is oriented toward the second substrate (12), and the second substrate surface (12a) of the second substrate (12) is oriented toward the first substrate (10). Its features are, The first substrate (10) is fixed to the second substrate (12) by means of at least one electrically conductive portion (22) formed by a metal bonding method, the electrically conductive portion being constructed within an intermediate volume (14) between the surface of the first substrate (10a) and the surface of the second substrate (12a). At least one electrode (16, 16a, 16b, 62) and at least one counter electrode (18a, 18b, 18c) are arranged within the intermediate volume (14), and the at least one electrode and the at least one counter electrode are electrically connected to the analysis processing circuit (20) such that the analysis processing circuit (20) can determine at least one parameter relating to at least one voltage applied between the at least one electrode (16, 16a, 16b, 62) and the at least one counter electrode (18a, 18b, 18c), wherein the at least one electrode (16, 16a, 16b, 62) and / or the at least one counter electrode (18a, 18b, 18c) are electrically connected to the analysis processing circuit (20) via at least one electrical contact (22) formed by means of the metal bonding method. The at least one counter electrode (18a, 18b, 18c) is disposed on the surface of the first substrate (10a) and / or on at least one first intermediate layer (26) that at least partially covers the surface of the first substrate (10a). The at least one electrode (16a, 16b) and the at least one counter electrode (18a, 18b) are arranged on the first substrate surface (10a) and / or the at least one first intermediate layer (26) such that the at least one electrode (16a, 16b) is located in a spatial direction (64a, 64b) parallel to the orientation of the first substrate surface (10a) relative to the counter electrode (18a, 18b) closest to the electrode arrangement.

2. The micromechanical component (76) according to claim 1, wherein, The at least one electrode (16, 16a, 16b, 62) is disposed on the first substrate surface (10a) and / or at least one first intermediate layer (26) that at least partially covers the first substrate surface (10a), and is electrically connected to the analysis processing circuit (20) by at least one electrical contact (22) formed by means of the metal bonding method.

3. The micromechanical component (76) according to claim 2, wherein, The at least one electrode (16, 16a, 16b, 62) is structured by a semiconductor capping layer and / or a metal capping layer (46) disposed on the first substrate surface (10a) and / or the at least one first intermediate layer (26), wherein, in addition to the at least one electrode (16, 16a, 16b, 62), at least one vibrational mass (70) is also structured by the semiconductor capping layer and / or the metal capping layer (46).

4. The micromechanical component (76) according to any one of claims 1 to 3, wherein, The at least one counter electrode (18a, 18b, 18c) is disposed on the second substrate surface (12a) and / or disposed on at least one second intermediate layer (30) that at least partially covers the second substrate surface (12a).

5. The micromechanical component (76) according to any one of claims 1 to 4, wherein, The at least one electrode (16, 16a, 16b, 62) and the at least one counter electrode (18a, 18b, 18c) are arranged on the first substrate surface (10a) and / or the at least one first intermediate layer (26) such that the at least one counter electrode (18a, 18b, 18c) is located between the at least one electrode (16, 16a, 16b, 62) and the first substrate surface (10a).

6. The micromechanical component (76) according to any one of claims 1 to 5, wherein, All electrodes and all counter electrodes are positioned relatively far from the anchor points of the frame structure.

7. A sensor device having a micromechanical component (76) according to any one of the preceding claims.

8. An apparatus having a micromechanical component (76) according to any one of claims 1 to 6 and / or a sensor device according to claim 7.

9. A method for manufacturing a micromechanical component (76) for a stress sensor, the method comprising the following steps: A first substrate (10) having a first substrate surface (10a) is arranged relative to a second substrate (12) having a second substrate surface (12a) and an analysis processing circuit (20) constructed on and / or in the second substrate (12) such that the first substrate surface (10a) of the first substrate (10) is oriented toward the second substrate (12), and the second substrate surface (12a) of the second substrate (12) is oriented toward the first substrate (10) (S1). Its characteristics include the following steps: A metal bonding method is implemented to fix the first substrate (10) to the second substrate (12), wherein, Using the metal bonding method, at least one electrical contact (22) is formed in an intermediate volume (14) between the first substrate surface (10a) and the second substrate surface (12a) such that at least one electrode (16, 16a, 16b, 62) and at least one counter electrode (18a, 18b, 18c) are arranged in the intermediate volume, such that the at least one electrode (16, 16a, 16b, 62) and / or the at least one counter electrode (18a, 18b, 18c) are connected by means of the metal bonding method. One less electrical contact (22) is electrically connected to the analysis and processing circuit (20), wherein the analysis and processing circuit (20) is connected to the at least one electrode (16, 16a, 16b, 62) and the at least one counter electrode (18a, 18b, 18c) such that the analysis and processing circuit (20) can determine at least one parameter (S2) with respect to at least one voltage applied between the at least one electrode (16, 16a, 16b, 62) and the at least one counter electrode (18a, 18b, 18c). The at least one counter electrode (18a, 18b, 18c) is disposed on the surface of the first substrate (10a) and / or on at least one first intermediate layer (26) that at least partially covers the surface of the first substrate (10a). The at least one electrode (16a, 16b) and the at least one counter electrode (18a, 18b) are arranged on the first substrate surface (10a) and / or the at least one first intermediate layer (26) such that the at least one electrode (16a, 16b) is located in a spatial direction (64a, 64b) parallel to the orientation of the first substrate surface (10a) relative to the counter electrode (18a, 18b) closest to the electrode arrangement.

10. The manufacturing method according to claim 9, wherein, In addition to the at least one electrically connected portion, an intermittent or continuous bonding framework is formed within the intermediate volume by means of the metal bonding method.

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