Method and related apparatus for protecting singulated integrated circuit die during integrated circuit processing

Abstract

The present application relates to a method and related equipment for protecting singulated integrated circuit die during integrated circuit processing. A singulated integrated circuit IC die is provided. The singulated IC die is positioned on a dicing tape to provide an open space between the sides of adjacent singulated IC die. An underfill layer and a protective cover film are disposed above the open space between the sides of the singulated IC die and the adjacent singulated IC die. The underfill layer and the protective cover film include one or more photo-definable materials. An exposure operation is performed to produce a pattern on the underfill layer and the protective cover film. Based on the pattern, the underfill layer and the protective cover film are removed at the area above the open space between the sides of the adjacent singulated IC die to form a portion of the underfill layer and a portion of the protective cover film disposed above the singulated IC die.

Description

Technical Field

[0001] Embodiments of the present disclosure relate generally to semiconductor manufacturing, and more particularly, to using a protective cover film for underfill protection during integrated circuit processing. Background Art

[0002] Integrated circuit (IC) die stacking may include the process of mounting multiple dies on top of each other, where the stacked dies are ultimately packaged in a single semiconductor package to form a discrete electronic device. The adoption of stacked IC dies continues to increase in an effort to reduce the overall electrical device footprint and improve the electrical performance of the electrical device. Summary of the invention

[0003] Aspects of the present application are directed to a method comprising: providing a singulated integrated circuit (IC) die on a dicing tape of a carrier, wherein the singulated IC die is positioned on the dicing tape to provide an open space between sides of adjacent singulated IC die; placing an underfill layer and a protective cover film over the open space between the sides of the singulated IC die and the adjacent singulated IC die, wherein the protective cover film is positioned over the underfill layer, wherein the underfill layer and the protective cover film include one or more photo-definable materials; performing an exposure operation to produce a pattern on the underfill layer and the protective cover film; and removing the underfill layer and the protective cover film at an area over the open space between the sides of the adjacent singulated IC die according to the pattern to form a portion of the underfill layer and a portion of the protective cover film placed over the singulated IC die.

[0004] Another aspect of the present application is directed to a device comprising: a carrier; a singulated integrated circuit (IC) die positioned on the carrier, wherein the singulated IC die are positioned on the carrier to provide an open space between sides of adjacent singulated IC die; and an underfill layer positioned on the singulated IC die; and a protective cover film positioned on the underfill layer, wherein the protective cover film is coupled to the underfill layer using an adhesive bond.

[0005] Another aspect of the present application is directed to a method comprising: providing a device wafer comprising an integrated circuit (IC) die; placing an underfill layer and a protective cover film on the device wafer, wherein the protective cover film is on the underfill layer and coupled to the underfill layer; and cutting the IC die from the device wafer by a processing device to form singulated IC die, wherein the singulated IC die comprises a portion of the underfill layer and a portion of the protective cover film placed on the singulated IC die. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The present disclosure will be more fully understood from the detailed description given below and from the drawings of various embodiments of the present disclosure. However, the drawings should not be used to limit the present disclosure to specific embodiments, but only for explanation and understanding.

[0007] Figure 1

[0013] According to some embodiments of the present disclosure, a device wafer is described for use in a manufacturing process that includes a first operation for providing the device wafer on a carrier.

[0008] Figure 2 According to some embodiments of the present disclosure, a device wafer is described for use in a manufacturing process that includes a second operation for forming an underfill layer and a protective cover film over the device wafer.

[0009] Figure 3

[0013] Some embodiments according to the present disclosure describe a device wafer for use in a manufacturing process that includes a third operation for underfilling a layer and a protective cover film over a region of the device wafer between IC dies of the device wafer.

[0010] Figure 4

[0013] Some embodiments according to the present disclosure describe a device wafer for use in a manufacturing process that includes a fourth operation for cutting IC dies from the device wafer to form singulated IC dies.

[0011] Figure 5A A device wafer for use in a manufacturing process including a fifth operation for removing one or more portions of a protective cover film is described according to some embodiments of the present disclosure.

[0012] Figure 5B A device wafer for use in a manufacturing process including a sixth operation for removing one or more portions of a protective cover film is described according to some embodiments of the present disclosure.

[0013] Figure 6 Device stacking in a manufacturing process is described according to some embodiments of the present disclosure, the manufacturing process including a seventh operation of stacking a plurality of dies on top of each other.

[0014] Figure 7 A flow chart is described for a fabrication process using a protective cover film for underfill protection according to some embodiments of the present disclosure.

[0015] Figure 8 A flow chart is described for a fabrication process using a protective cover film for underfill protection according to some embodiments of the present disclosure.

[0016] Fig. 9

[0013] According to some embodiments of the present disclosure, a device wafer is described for use in a fabrication process that includes a first operation for providing the device wafer on a carrier.

[0017] Fig.10

[0013] Some embodiments according to the present disclosure describe singulated IC dies of a device wafer for use in a manufacturing process that includes a second operation for separating the IC dies from the device wafer.

[0018] Fig.11 Singulated IC dies of a device wafer for use in a manufacturing process including a third operation for forming an underfill layer and a protective cover film over the singulated IC dies are described according to some embodiments of the present disclosure.

[0019] Fig.12 Some embodiments according to the present disclosure illustrate singulated IC dies of a device wafer for use in a manufacturing process that includes a fourth operation for performing an exposure operation to create a pattern on one or more of an underfill layer or a protective cover film.

[0020] Fig.13 Singulated IC dies of a device wafer for use in a manufacturing process that includes a fifth operation for removing an underfill layer and a protective cover film at areas overlying open spaces between sides of adjacent singulated IC dies are described according to some embodiments of the present disclosure.

[0021] Fig.14A Singulated IC dies of a device wafer for use in a manufacturing process that includes a sixth operation for removing one or more portions of a protective cover film are described according to some embodiments of the present disclosure.

[0022] Fig. 14B Singulated IC dies of a device wafer for use in a manufacturing process that includes a seventh operation for removing one or more portions of a protective cover film are described according to some embodiments of the present disclosure.

[0023] Fig.15A flow chart illustrating a manufacturing process using a protective cover film and an underfill layer over singulated IC dies is described according to some embodiments of the present disclosure.

[0024] Fig.16 A computing device made according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0025] Die stacking includes making one or more wafers with IC die. The wafer can be placed on a carrier and cut to form singulated IC die. The singulated IC die are selected and sorted to find the "good" die that works and remove the "bad" die that does not work. The singulated IC die that works can have an underfill layer on the surface of the singulated IC die. The underfill layer can include a dielectric material. When two active IC die are stacked to form a stacked device, the underfill layer can be sandwiched between the two stacked die. The underfill layer can help to electrically insulate the two stacked die, and assist in welding and joining the stacked IC die.

[0026] In some conventional manufacturing systems, a wafer-level underfill may be applied to the wafer. When the wafer is cut to form singulated IC die, contaminants generated by the cutting operation may fall onto the underfill layer. Additionally, in some cases, when singulated IC die are picked from a carrier, other contaminants may fall onto the underfill layer of the singulated IC die still on the carrier. Contaminants on the underfill layer may cause electrical and mechanical defects in the singulated IC die and the resulting stacked device, which may reduce yield.

[0027] Aspects of the present disclosure address the above and other deficiencies by placing an underfill layer and a protective cover film on a device wafer. The protective cover film may be located on the underfill layer. During dicing of the device wafer, the protective cover film may remain on the device wafer and protect the underlying underfill layer from contamination.

[0028] In some embodiments, before removing the singulated IC die from the carrier, the underfill layer above the singulated IC die can be selectively removed. One or more of the remaining singulated IC die on the carrier can retain their respective portions of the protective cover film. When the selected singulated IC die is removed from the carrier, the protective cover film on the singulated IC die on the device wafer can help protect the singulated IC die (and the underfill layer) on the carrier from contamination.

[0029] In some embodiments, the protective cover film can be a material that is bonded to the top surface of the underfill layer using adhesive bonding. For example, the protective cover film can be a polymer that is coupled to the underfill layer using an adhesive. The protective cover film can have an adhesive strength that is less than the adhesive strength between the underfill layer and the device wafer, and an adhesive strength that is less than the adhesive strength between the bottom surface of the singulated IC die and the dicing tape of the carrier, so that when the protective cover film is removed, the underfill layer remains on the singulated IC die, and the singulated IC die remains bonded to the carrier.

[0030] In an illustrative embodiment, the bottom fill layer may include a non-conductive film (NCF). The NCF may include a solid material, such as a polymer, which is dispensed as a solid sheet. In some cases, both the protective cover film and the NCF are pre-bonded and dispensed as a single sheet. The sheet comprising both the protective cover film and the NCF may be laminated onto the wafer using one or more of heat or pressure. When the device wafer is cut, the protective cover film and the NCF remain on the device wafer and the resulting singulated IC die. With respect to the singulated IC die, the protective cover film may be removed (e.g., peeled off) from the underlying NCF at any desired time during the fabrication process using a force greater than the adhesive bond between the protective cover film and the NCF.

[0031] Other aspects of the present disclosure solve the above and other defects by separating the IC die of the device wafer into singulated IC die. In some embodiments, a cleaning operation can be used to remove loose particles associated with separating the IC die from the device wafer. The singulated IC die is arranged on a dicing tape of a carrier. The singulated IC die is positioned on the dicing tape to set an open space (e.g., a deep etch road) between the sides of adjacent singulated IC die. The bottom fill layer and the protective cover film are arranged on the open space above the singulated IC die and between the sides of adjacent singulated IC die. One or more of the bottom fill layer or the protective cover film include a photo-definable material. An exposure operation is performed to generate a pattern on the bottom fill layer and the protective cover film. Based on the pattern, the bottom fill layer and the protective cover film are removed from the area above the open space between the sides of adjacent singulated IC die to form a portion of the bottom fill layer and a portion of the protective cover film arranged on the singulated IC die. Since the device wafer is cut and cleaned before the bottom fill layer is arranged, the bottom fill layer is exposed to less contaminants. Additionally, singulation of the protective cover film over portions of the underfill layer (eg, portions) may further protect the underfill layer from contaminants generated during IC processing.

[0032] Advantages of the present disclosure include, but are not limited to, improved IC die yield and improved stacked device yield in view of other IC processing techniques. In particular, aspects of the present disclosure reduce contaminants on underfill layers during the integrated circuit fabrication process, which can result in improved yield.

[0033] It should be noted that for the purpose of illustration and not limitation, Figures 1 to 6 and Figures 9 to 14B Described as an apparatus (e.g., a device wafer) and a series of operations. It should be noted that in some embodiments, some, all, more, or different operations may be performed. It may be noted that in some embodiments, some operations may be performed in a different order or not performed at all.

[0034] Figure 1

[0013] According to some embodiments of the present disclosure, a device wafer is described for use in a manufacturing process that includes a first operation for providing the device wafer on a carrier.

[0035] Figure 1 100 illustrates a device wafer 110 oriented on a carrier 112 (also referred to herein as a "wafer carrier"). In some embodiments, the device wafer 110 may refer to a patterned wafer that has been patterned with circuits during a fabrication process, such as a semiconductor fabrication process. The device wafer 110 may have a plurality of integrated circuits (ICs) that have been fabricated on the device wafer 110. The integrated circuits may be separated (e.g., diced) from the device wafer 110 to form a plurality of singulated IC dies. In some embodiments, the carrier 112 may refer to a platform that supports the device wafer 110. For example, the carrier 112 may be used to help handle the device wafer 110 or transport the device wafer 110 from one piece of fabrication equipment to another piece of fabrication equipment. In another example, the carrier 112 may be used to help store the associated device wafer 110. In an illustrative example, the carrier 112 may include a frame 108 (also referred to herein as a "wafer frame ring") and a dicing tape 106. The frame 108 may be formed of a rigid material, such as a metal or a metal alloy. The dicing tape 106 can be a material that holds the device wafer 110 and can be used to hold the device wafer 110 and the resulting singulated IC wafers during dicing operations to separate the singulated IC dies from the device wafer 110. The adhesive on the top side of the dicing tape can hold the device wafer 110 (or singulated dies) in place. The dicing tape 106 can be made of many materials, such as polyolefins, polyethylene, or polyvinyl chloride (PVC).

[0036] Figure 2 According to some embodiments of the present disclosure, a device wafer is described for use in a manufacturing process that includes a second operation for forming an underfill layer and a protective cover film over the device wafer.

[0037] Figure 2 200 shows an underfill layer 214 (also referred to herein as a "wafer-level underfill") and a protective cover film 216 formed above the device wafer 110. The underfill layer 214 may refer to an electrically insulating material (e.g., a dielectric material) applied to the device wafer 110 or singulated die. In some embodiments, the underfill layer 214 may be an adhesive layer having adhesive strength and bonded to the device wafer 110. In some embodiments, after the underfill layer 214 is disposed on the device wafer 110 using one or more of heat or pressure, it may be fully or partially cured. In some embodiments, the underfill layer 214 may fully or partially encapsulate any electrical contacts (e.g., posts) of the underlying IC die on which the underfill layer is disposed. In some embodiments, the underfill layer 214 may help compensate for thermal expansion mismatches between a first IC die and another IC die (or substrate) to which the first IC die is bonded.

[0038] In some embodiments, the bottom fill layer 214 (and the protective cover film 216) may be completely or partially transparent so that an optical inspection device can inspect the area between the IC dies of the device wafer 110 (e.g., for cutting) or inspect the electrical connections of the IC dies for die-to-die (or substrate) bonding. For example, alignment features may be formed at the device wafer 110. The alignment features may be positioned in a "deep etch street," which is an area between the IC dies of the device wafer 110. A charge coupled device (CCD) or an optical camera may be used to detect the alignment features below the bottom fill layer 214 (and the protective cover film 216). The alignment features may be used as a guide to cut the device wafer 110 so that the IC dies of the device wafer 110 may be separated without damaging the IC dies.

[0039] In some embodiments, the bottom fill layer 214 includes a non-conductive film (NCF). The NCF may include an electrically insulating material (e.g., an electrical medium). The NCF may include a cleaning agent that promotes soldering by eliminating oxidation. The NCF may also prevent solder from flowing back to adjacent electrical contacts and causing electrical damage (e.g., an electrical short circuit). In some embodiments, and as described above, the NCF is a solid material that can be dispensed as a solid material sheet. For example, the NCF sheet can be unrolled from a roll and placed on top of the underlying device wafer 110. In some embodiments, the NCF and the protective cover film 216 can be dispensed as a single material sheet, as discussed above and further below. The NCF may have one or more characteristics as discussed with respect to the bottom fill layer 214. In other embodiments, the bottom fill layer 214 may be or include a different material, such as, but not limited to, a thermosetting polymer (e.g., an epoxy resin), silicon dioxide, or other materials.

[0040] In some embodiments, the protective cover film 216 may be a layer bonded to the top surface of the bottom fill layer 214 using adhesive bonding. For example, the protective cover film 216 may include an adhesive bonded to the top surface of the bottom fill layer 214. The protective cover film 216 may have an adhesive strength that is less than the adhesive strength between the bottom fill layer 214 and the device wafer 110. The adhesive strength of the protective cover film 216 may be less than the adhesive strength between the device wafer 110 (or the singulated IC die) and the dicing tape 106 of the carrier 112. The low adhesive strength allows the protective cover film 216 (or a portion of the protective cover film 216) to be removed (e.g., pulled out) without removing the underlying bottom fill layer 214 or the singulated IC die from the carrier 112. In some embodiments, the protective cover film 216 may also be completely or partially transparent, which allows an optical inspection device to inspect the areas between the dies of the device wafer 110. In some embodiments, the bottom fill layer 214 may be "sticky" or have adhesive properties such that the protective cover film 216 may be bonded to the top surface of the bottom fill layer 214 without the use of additional adhesive materials. In some embodiments, the protective cover film 216 may be a solid material that is dispensed as a solid sheet. In some embodiments, electrical contacts extending from the IC die of the device wafer 110 extend through the bottom fill layer 214 but do not extend through the protective cover film 216. The protective cover film 216 may include a different material than the bottom fill layer 214. In some embodiments, the protective cover film 216 does not include a resist material (e.g., a material that cures or hardens in response to exposure to a light source such as ultraviolet light).

[0041] In some embodiments, the bottom fill layer 214 and the protective cover film 216 can be applied together using a single operation such as a lamination operation. In some embodiments, the bottom fill layer 214 and the protective cover film 216 are pre-bonded to each other (e.g., a single thin sheet) before the bottom fill layer 214 and the protective cover film 216 are applied to the device wafer 110. A solid sheet containing both the bottom fill layer 214 and the protective cover film 216 is placed on top of the device wafer 110 and laminated to the device wafer 110 using a lamination operation. The lamination operation applies both heat and pressure, which causes the bottom fill layer 214 to adhere to the top surface of the device wafer 110. For example, a heated press plate can be positioned above the thin sheet of the bottom fill layer 214 and the protective cover film 216. The heated press plate can apply both heat and pressure to the thin sheet. In another example, an air bag can be used to apply pressure around the device wafer 110, the bottom fill layer 214, and the protective cover film 216 by using a vacuum. Heat can be applied in a vacuum to perform the lamination operation.

[0042] In some embodiments, a variety of operations may be used to apply the bottom fill layer 214 and the protective cover film 216. For example, the bottom fill layer 214 may be applied to the top surface of the device wafer 110. The protective cover film 216 may be applied to the top surface of the bottom fill layer. For example, a capillary bottom fill operation dispenses the bottom fill material (as a liquid) onto the device wafer 110. The bottom fill material is attracted to the top of the device wafer 110 by capillary action. The bottom fill material may be cured at an elevated temperature before or after the protective cover film 216 is applied. In some embodiments, after dispensing the bottom fill material, the protective cover film 216 may be dispensed as a thin sheet as described herein. In other embodiments, after dispensing the bottom fill material, the protective cover film 216 may be disposed as a liquid layer (e.g., spin-coated).

[0043] In another example where multiple operations are used to apply the underfill layer 214 and the protective cover film 216, the underfill layer 214 can be dispensed as a liquid toward the center of the device wafer 110 and distributed across the device wafer 110 and the wafer accelerated to a determined radial velocity (e.g., spin coating). The underfill layer 214 can be partially cured (e.g., b-staged). As described herein, the protective cover film 216 can be applied over the underfill layer 214 in sheet or liquid form.

[0044] Figure 3

[0013] Some embodiments according to the present disclosure describe a device wafer for use in a manufacturing process that includes a third operation for underfilling a layer and a protective cover film over a region of the device wafer between IC dies of the device wafer.

[0045] Figure 3 300 shows the removal of the underfill layer 214 and the protective cover film 216 over areas of the device wafer 110 located between the IC dies of the device wafer 110 (e.g., over deep etch streets of the device wafer 110). The underfill layer 214 and the protective cover film 216 are removed over the deep etch streets of the device wafer 110 to form portions of the protective cover film 316 and portions of the underfill layer 314. It should be noted that after removing the protective cover film 216 and the underfill layer 214 over the deep etch streets of the device wafer 110, the underfill layer 214 and the protective cover film 216 are effectively singulated to form portions of the protective cover film 316 and portions of the protective cover film 316.

[0046] In some embodiments, the laser source device 318 may be used to remove the bottom fill layer 214 and the protective cover film 216 above the deep etched streets of the device wafer 110. For example, the laser source device 318 may emit light of a selected wavelength (and a selected power) that etches the protective cover film 216 and the bottom fill layer 214 in the desired area. In some embodiments, the laser source device 318 may remove the protective cover film 216 and the bottom fill layer 214 in the desired area without cutting the underlying IC die of the device wafer 110. For example, the wavelength and power of the light may be selected so that the laser source device 318 etches the protective cover film 216 and the bottom fill layer 214 without etching the device wafer 110. In other embodiments, the protective cover film 216 and the bottom fill layer 214 may be removed using different techniques, such as physical sawing or chemical material removal.

[0047] Figure 4

[0013] Some embodiments according to the present disclosure describe a device wafer for use in a manufacturing process that includes a fourth operation for cutting IC dies from the device wafer to form singulated IC dies.

[0048] Figure 4 400 shows the dicing of device wafer 110 to form singulated IC die 420. In some embodiments, for example Figure 3 The laser source device of the laser source device 318 can be used to cut the individual IC dies of the device wafer 110. In some embodiments, the same laser source device can be used to separate the protective cover film 216, the bottom fill layer 214, and the device wafer 110. For example, the laser source device 318 can use a first wavelength of light and a first selected power to etch the protective cover film 216 and the bottom fill layer 214, and use a second wavelength of light and a second selected power to cut the device wafer 110 (e.g., a two-pass process). The wavelength of light used to cut the device wafer 110 and the selected power can be smaller or higher than the wavelength of light selected for etching the protective cover film 216 and the bottom fill layer 214 and the selected power, respectively. In another example, different laser source devices can be used, such that the first laser source device is used to etch the protective cover film 216 and the bottom fill layer 214, and the different laser source device is used to cut the device wafer 110.

[0049] In some embodiments, for example, different techniques (or combinations thereof) may be used to cut the device wafer 110, such as physical sawing or chemical material removal or material degradation caused by exposure. It should be noted that for the sake of illustration and not limitation, the removal of the protective cover film 216 and the bottom fill layer 214 and the cutting of the device wafer 110 are described as different operations. In some embodiments, one or more of the protective cover film 216, the bottom fill layer 214, and the device wafer 110 may be separated using a single process. For example, the laser source device 318 may be calibrated with a wavelength of light and a selected power to cut through all of the protective cover films 216, the bottom fill layer 214, and the device wafer 110 in a single pass.

[0050] Figure 5A A device wafer for use in a manufacturing process including a fifth operation for removing one or more portions of a protective cover film is described according to some embodiments of the present disclosure.

[0051] Figure 5A 500 shows all portions of the protective cover film 316 being removed from corresponding portions of the bottom fill layer 314. As described above, the protective cover film 216 may be adhered to the top surface of the bottom fill layer 214 (e.g., after cutting, portions of the protective cover film 316 may be adhered to corresponding portions of the bottom fill layer 314). In some embodiments, a debonding operation may be performed to remove a portion of the protective cover film from corresponding portions of the bottom fill layer. For example, portions of the protective cover film 316 may be debonded (e.g., delaminated) by pulling the portion of the protective cover film 316 away from the portion of the bottom fill layer 314 with a force greater than the adhesive force between the portion of the protective cover film 316 and the corresponding portion of the bottom fill layer 314. For example, portions of the protective cover film 316 may be removed in a manner similar to removing an adhesive tape from a surface. In some embodiments, all portions of the protective cover film 316 film may be removed during the debonding operation, as described. After all portions of the protective cover film 316 are removed, the singulated IC die 420 may be removed from the carrier 112 and used in subsequent operations, such as with respect to Figure 6 Described die stacking.

[0052] Figure 5B A device wafer for use in a manufacturing process including a sixth operation for removing one or more portions of a protective cover film is described according to some embodiments of the present disclosure.

[0053] Figure 5B550 shows the selective removal of portions of protective cover film 216. In some embodiments, one or more singulated IC dies on carrier 112 may have corresponding portions of protective cover film removed (e.g., a selective debonding operation) while other singulated IC dies on carrier 112 do not have corresponding portions of protective cover film removed. In some embodiments, one or more singulated ICs that have had corresponding portions of their protective cover film removed may be removed from carrier 112 while other singulated IC dies having corresponding portions of protective cover film 216 remain adhered to carrier 112. The portions of protective cover film may help protect corresponding underlying singulated IC dies (and corresponding portions of underfill layer) that remain on carrier 112 from contaminants (e.g., loose particles associated with separating the IC dies from device wafer 110) that diffused from the removal of the singulated IC dies that previously had corresponding portions of the protective cover film removed.

[0054] For example, the protective cover film of a first singulated IC die of singulated IC die 420 may be removed. The underfill layer of the first singulated IC die may remain. Carrier 112 may include an open area where a second singulated IC die was previously removed, wherein the second singulated IC die was removed prior to removing the protective cover film of the first singulated IC die. A third singulated IC die may also be oriented over carrier 112. The protective cover film and underfill layer over the third singulated IC die remain (e.g., when the first or second singulated IC die is removed from carrier 112) and protect the third singulated IC die and a portion of its underfill layer from contamination.

[0055] It may be noted that in other embodiments, the singulated IC dies including the respective portions of the underfill layer and the portions of the protective cover film may be removed from carrier 112. The portions of the protective cover film of the respective singulated IC dies may be removed after the singulated IC dies are removed from carrier 112. For example, the portions of the protective cover film may be removed after the singulated IC dies are removed from carrier 112 but before the singulated IC dies are stacked on another electronic device.

[0056] Figure 6 Device stacking in a manufacturing process is described according to some embodiments of the present disclosure, the manufacturing process including a seventh operation of stacking a plurality of dies on top of each other.

[0057] Figure 6600 shows a die stacking operation. Device wafer 626 (also referred to herein as a "receiving wafer") may be any type of device wafer. It may be noted that in some embodiments, singulated IC die may be stacked on a substrate instead of device wafer 110. Singulated IC die 624B and corresponding portions of bottom fill layer 624A may be removed from carrier 112 after removing corresponding portions of the protective cover film and placed (adhered) on die 628 of device wafer 626. Another singulated IC die 622B and corresponding portions of bottom fill layer 622A may also be removed from carrier 112 (or a different carrier with a different type of IC die) and adhered on top of singulated IC die 624B. Any number of singulated IC die may be stacked in device stack 630.

[0058] In some embodiments, a thermocompression bonding (TCB) operation may be performed to bond the stacked dies to each other. In a TCB operation, heat and pressure are applied to the device stack 630 (or at least two stacked dies). The TCB operation allows portions of the underfill layers 624A and 622A to fill any gaps and reflow solder joints to form interconnections between the singulated IC dies 622B and 624B.

[0059] The following can be described Figures 1 to 6 components to help illustrate Figure 7 Method 700 and Figure 8 Method 800 of the present invention. Methods 700 and 800 may be performed as one or more operations. It may be noted that methods 700 or 800 may be performed in any order and may include the same, different, more or fewer operations. It may be noted that methods 700 or 800 may be performed by one or more pieces of semiconductor fabrication equipment or fabrication tools, hereinafter referred to as fabrication equipment.

[0060] Figure 7 A flow chart is described for a fabrication process using a protective cover film for underfill protection according to some embodiments of the present disclosure.

[0061] At operation 705 of method 700, a fabrication facility provides a device wafer. The device wafer may include a plurality of uncut IC dies. In some embodiments, the device wafer may be disposed on a carrier.

[0062] At operation 710, a fabrication apparatus places an underfill layer and a protective cover film over a device wafer. In some embodiments, the protective cover film is over and coupled to the underfill layer. In some embodiments, the underfill layer is an NCF. In some embodiments, the protective cover film and the underfill layer are dispensed as a single solid sheet, wherein the protective cover film is pre-bonded to the underfill layer. The sheet may be oriented to cover an underlying device wafer and laminated to the device wafer. In some embodiments, the underfill layer and the protective cover film may be laminated to the device wafer using, for example, a lamination operation.

[0063] At operation 715, the fabrication equipment cuts the IC die from the device wafer to form singulated IC die. In some embodiments, the singulated IC die include portions of an underfill layer and portions of a protective cover film laminated over the singulated IC die.

[0064] In some embodiments, dicing the IC dies from the device wafer to form singulated IC dies includes removing an underfill layer and a protective cover film over regions of the device dies between the IC dies.

[0065] In some embodiments, a singulation operation is performed in which the fabrication equipment removes the underfill layer and protective cover film over the areas of the device wafer between the IC dies before dicing the IC dies from the device wafer to form singulated IC dies (eg, two processes).

[0066] At operation 720, the fabrication equipment removes one or more portions of the protective cover film from over the singulated IC dies. In some embodiments, removing the one or more portions of the protective cover film exposes corresponding one or more portions of the underfill layer over the singulated IC dies.

[0067] In some embodiments, removing one or more portions of the protective cover film from the singulated IC dies includes removing portions of the protective cover film using a debonding operation that removes all portions of the protective cover film.

[0068] In some embodiments, removing one or more portions of the protective cover film from the singulated IC die includes removing a first portion of the protective cover film over a first singulated IC die. The first singulated IC die is removed from a carrier. The singulated IC die are oriented over the carrier. After the first singulated IC die is removed from the carrier, a second portion of the protective cover film over a second singulated IC die is removed.

[0069] At operation 725, the fabrication equipment removes the singulated IC die from the carrier with the corresponding portions of the protective cover film removed.

[0070] At operation 730, the fabrication equipment stacks the singulated die on top of another IC die. In some embodiments, the corresponding portions of the protective cover films of the singulated die have been previously removed (e.g., operation 725). In some embodiments, the singulated die are stacked on top of a different object such as a substrate (e.g., a flip chip).

[0071] Figure 8 A flow chart is described for a fabrication process using a protective cover film for underfill protection according to some embodiments of the present disclosure.

[0072] At operation 805 of method 800, a fabrication facility provides a device wafer. The device wafer may include a plurality of uncut IC dies. In some embodiments, the device wafer may be disposed on a carrier.

[0073] At operation 810 , fabrication equipment places an underfill layer over a device wafer.

[0074] At operation 815 , the fabrication equipment places a protective cover film over the underfill layer.

[0075] At operation 820, the fabrication equipment cuts the IC die from the device wafer to form singulated IC die. In some embodiments, the singulated IC die include portions of an underfill layer and portions of a protective cover film laminated over the singulated IC die.

[0076] In some embodiments, dicing the IC dies from the device wafer to form singulated IC dies includes removing an underfill layer and a protective cover film over regions of the device dies between the IC dies as part of dicing the IC dies from the device wafer to form singulated IC dies.

[0077] In some embodiments, a separation operation is performed in which a fabrication apparatus removes an underfill layer and a protective cover film located above a region between the IC dies of the device wafer before the IC dies are cut from the device wafer to form singulated IC dies. In some embodiments, a separation operation is performed in which a laser source device is directed to emit light toward the protective cover film and the underfill layer at a position located above the region between the IC dies of the device wafer so that the protective cover film and the underfill layer are separated into portions of the protective cover film and portions of the underfill layer corresponding to respective ones of the IC dies of the device wafer. In some embodiments, the separation operation may be performed before the IC dies are cut from the device wafer to form singulated IC dies.

[0078] At operation 825, the fabrication equipment removes one or more portions of the protective cover film from over the singulated IC dies. The removal of the one or more portions of the protective cover film exposes corresponding one or more portions of the underfill layer over the singulated IC dies.

[0079] In some embodiments, removing one or more portions of the protective cover film from the singulated IC dies includes removing portions of the protective cover film using a debonding operation that removes all portions of the protective cover film.

[0080] In some embodiments, removing one or more portions of the protective cover film from the singulated IC die includes removing a first portion of the protective cover film over a first singulated IC die in the singulated IC die. Removing the first singulated IC die from a carrier with the other singulated IC die oriented over the carrier. After removing the first singulated IC die from the carrier, removing a second portion of the protective cover film over a second singulated IC die of the singulated IC die.

[0081] At operation 830, the fabrication equipment removes the singulated IC dies from the carrier 112. Prior to removing the singulated IC dies from the carrier 112, the protective cover film portions of the singulated dies have been removed.

[0082] At operation 835 , the fabrication equipment stacks the singulated IC die on top of another IC die (or other object, such as a substrate).

[0083] In some embodiments, the method includes providing a device wafer including an integrated circuit (IC) die; placing an underfill layer and a protective cover film on the device wafer, wherein the protective cover film is on the underfill layer and coupled to the underfill layer; and cutting the IC die from the device wafer by a processing device to form singulated IC die, wherein the singulated IC die includes a portion of the underfill layer and a portion of the protective cover film placed on the singulated IC die.

[0084] In some embodiments, the method includes removing one or more portions of a protective cover film from a singulated IC die, wherein removing the one or more portions of the protective cover film exposes corresponding one or more portions of an underfill layer above the singulated IC die. In some embodiments, the method, wherein removing one or more portions of the protective cover film from the singulated IC die includes removing portions of the protective cover film using a debonding operation that removes all portions of the protective cover film. In some embodiments, the method, wherein removing one or more portions of the protective cover film from the singulated IC die includes removing a first portion of the protective cover film above a first singulated IC die; removing the first singulated IC die from a carrier, wherein the singulated IC die is oriented above the carrier; and after removing the first singulated IC die from the carrier, removing a second portion of the protective cover film located above the second singulated IC die. In some embodiments, the method includes stacking the first singulated IC die on top of another IC die after removing the first singulated IC die.

[0085] In some embodiments, the method, wherein cutting the IC die from the device wafer to form singulated IC die includes: as part of cutting the IC die from the device wafer to form singulated IC die, removing an underfill layer and a protective cover film over areas of the device die between the IC die.

[0086] In some embodiments, the method includes directing a laser source device to emit light toward a protective cover film and a bottom fill layer at a position above an area of ​​a device wafer between IC dies, so that the protective cover film and the bottom fill layer are separated into portions of the protective cover film and portions of the bottom fill layer corresponding to respective ones of the IC dies of the device wafer.

[0087] In some embodiments, the apparatus includes: a carrier; an integrated circuit (IC) die of a device wafer positioned on the carrier; and an underfill layer on the IC die; and a protective cover film on the underfill layer, wherein the protective cover film is coupled to the underfill layer using an adhesive bond, wherein the underfill layer and the protective cover film on an area of ​​the device wafer between the IC die have been removed.

[0088] In some embodiments, the bottom fill layer includes a non-conductive film, and wherein the bottom fill layer and the protective cover film are laminated to the IC die. In some embodiments, the protective cover film and the bottom fill layer located above the region between the IC die of the device wafer have been removed by the emission light from the laser source device, so that the protective cover film and the bottom fill layer are separated into a portion of the protective cover film and a portion of the bottom fill layer corresponding to the respective ones of the IC die of the device wafer. In some embodiments, the IC die includes an IC die that has been cut from the device wafer, wherein the protective cover film above the first singulated IC die of the singulated IC die has been removed, and wherein the bottom fill layer located at the first singulated IC die is retained. In some embodiments, the carrier includes an open area, at which the second singulated IC die of the singulated IC die has been removed from the carrier. In some embodiments, the third singulated IC die of the singulated IC die is oriented above the carrier, wherein the protective cover film and the bottom fill layer located above the third singulated IC die are retained.

[0089] In some embodiments, the method includes providing a device wafer including an integrated circuit (IC) die; disposing an underfill layer on the device wafer; disposing a protective cover film on the underfill layer; and cutting the IC die from the device wafer by a processing device to form singulated IC die, wherein the singulated IC die includes a portion of the underfill layer and a portion of the protective cover film located above the singulated IC die.

[0090] In some embodiments, the method includes removing one or more portions of a protective cover film from a singulated IC die, wherein removing the one or more portions of the protective cover film exposes corresponding one or more portions of an underfill layer above the singulated IC die. In some embodiments, wherein removing the one or more portions of the protective cover film from the singulated IC die includes removing portions of the protective cover film using a debonding operation, wherein the debonding operation removes all portions of the protective cover film. In some embodiments, wherein removing the one or more portions of the protective cover film from the singulated IC die includes removing a first portion of the protective cover film above a first singulated IC die in the singulated IC die; removing the first singulated IC die from a carrier, wherein the singulated IC die is oriented above the carrier; and after removing the first singulated IC die from the carrier, removing a second portion of the protective cover film located above a second singulated IC die of the singulated IC die. In some embodiments, the method includes stacking the first singulated IC die on top of another IC die after removing the first singulated IC die.

[0091] In some embodiments, the method, wherein dicing the IC die from the device wafer to form singulated IC die includes: removing an underfill layer and a protective cover film located over regions of the device die between the IC die as part of dicing the IC die from the device wafer to form singulated IC die. In some embodiments, the method includes directing a laser source device to emit light directed toward the protective cover film and the underfill layer at a location located over the region of the device wafer between the IC die, such that the protective cover film and the underfill layer are separated into portions of the protective cover film and portions of the underfill layer corresponding to respective ones of the IC die of the device wafer.

[0092] For the sake of clarity, the above Figures 1 to 8 The description is incorporated into or applied to Figures 9 to 15 (and vice versa), unless otherwise stated. For example, unless otherwise stated, Figures 1 to 8 The described elements, operations, or embodiments are incorporated into or applied to Figures 9 to 15 For example, unless otherwise stated, the description of the similar components, operations or embodiments described above. Figures 1 to 8 The description of the carrier 112, dicing tape 106, and device wafer 110 may be applicable to Fig. 9 5, the carrier 912, the dicing tape 906, and the device wafer 910. Further for the sake of clarity, the above description of Figures 1 to 8 The description is usually (but not always) in the following section about Figures 9 to 15 will not be repeated, but may be incorporated into or applied to Figures 9 to 15 It should also be noted that Figures 1 to 8 Any of the operations described may be included in Figures 9 to 15 The invention may be used in or in combination with the operations (or methods) described herein (and vice versa).

[0093] Fig. 9

[0013] According to some embodiments of the present disclosure, a device wafer is described for use in a fabrication process that includes a first operation for providing the device wafer on a carrier.

[0094] Fig. 9 900 illustrates a device wafer 910 oriented on a carrier 912. The device wafer 910 may include any number of IC wafers that have been fabricated on the device wafer 910. The carrier 912 may include one or more of a frame 908 and a dicing tape 906. In some embodiments, the dicing tape 906 may be transparent or partially transparent. Specifically, in some embodiments, the dicing tape 906 is useful for performing operations such as those described with respect to FIG. Fig.12 The exposure operation is further described as having a wavelength (or wavelength range) of light for which the light is transparent or partially transparent.

[0095] Fig.10

[0013] Some embodiments according to the present disclosure describe singulated IC dies of a device wafer for use in a manufacturing process that includes a second operation for separating the IC dies from the device wafer.

[0096] Fig.10 FIG. 1000 illustrates singulated IC dies 1020A to 1020J (generally referred to herein as "singulated IC dies 1020"). It may be noted that singulated IC dies 1020A to 1010J are provided for illustration purposes and not limitation. In some embodiments, any number of singulated IC dies 1020 may be provided.

[0097] In some embodiments, singulated IC die 1020 are disposed on dicing tape 906 of carrier 912. Device wafer 110 includes IC die (e.g., Fig. 9 910 is not singulated). In some embodiments, the IC dies of device wafer 910 are separated (e.g., diced) from device wafer 910 to form singulated IC dies 1020. In some embodiments, a cleaning operation is performed on singulated IC dies 1020 to remove any loose particles associated with separating the IC dies from device wafer 910. For example, one or more solvents may be used to remove loose particles from carrier 912 and singulated IC dies 1020. In some embodiments, any type of cleaning operation may be performed to clean carrier 912 and singulated IC dies 1020.

[0098] In some embodiments, the singulated IC dies 1020 are positioned on the dicing tape 906 to provide open spaces (eg, open spaces 1050A and 1050B, also referred to herein as “etch streets”) between sides of adjacent singulated IC dies 1020 .

[0099] In some embodiments, device wafer 910 is a non-reconstructed wafer, such as in Fig. 9 A non-reconstructed wafer may refer to a semiconductor wafer on which electronic circuits (e.g., multiple IC dies) are directly fabricated. For some embodiments using non-reconstructed wafers, carrier 912 is a semiconductor wafer on which an uncut device wafer 910 (e.g., as in Fig. 9 1020 , and an underfill layer and a protective cover film are disposed on the carrier. In some embodiments using a non-reconstructed wafer, all singulated IC dies 1020 are from the same device wafer 910.

[0100] In other embodiments, a reconstituted wafer may be used. A reconstituted wafer may refer to a wafer having IC dies that have been diced from a device wafer, removed from the respective carriers on which the IC dies were diced, and attached (at least some) to a substrate (e.g., a carrier substrate) or directly on a dicing tape of a different carrier. In some cases, the singulated IC dies of a reconstituted wafer may be from one or more device wafers.

[0101] Fig.11 Singulated IC dies of a device wafer for use in a manufacturing process including a third operation for forming an underfill layer and a protective cover film over the singulated IC dies are described according to some embodiments of the present disclosure.

[0102] Fig.11 1100 illustrates singulated IC dies 1020 and an underfill layer 1114 and a protective cover film 1116 disposed on the singulated IC dies 1020. In some embodiments, the singulated IC dies 1020 are disposed on the dicing tape 906 of the carrier 912. The singulated IC dies 1020 are positioned on the dicing tape 906 to provide open spaces (e.g., deep etch streets) between sides of adjacent singulated IC dies 1020.

[0103] In some embodiments, the bottom fill layer 1114 and the protective cover film 1116 are disposed over the singulated IC die 1020 and the open spaces between the adjacent singulated IC die 1020. The protective cover film 1116 is positioned over the bottom fill layer 1114. It should be noted that the disposition of the bottom fill layer 1114 and the protective cover film 1116 is described above and in particular with respect to FIG. Figure 2 Further described. In some embodiments, one or more of the bottom fill layer 1114 or the protective cover film 1116 includes one or more photodefinable materials (also referred to herein as "photosensitive materials"). Photodefinable can refer to a property of a material, where exposure to light (e.g., a specific range or a specific wavelength) can cause the material to be modified (e.g., a change in the properties of the material, such as hardening or softening the material). The photodefinable material can be patterned by exposing the material to a pattern of light. The hardened photodefinable material can be retained, while the unhardened (or degraded) photodefinable material can be removed, which produces a specific pattern of the photodefinable material.

[0104] In some embodiments, the photodefinable material may include a positive-acting photodefinable material. For a positive-acting photodefinable material, light is directed to the photodefinable material in the area where it is intended to be removed. When the positive-acting photodefinable material is exposed to light, the chemical structure of the material changes and becomes more soluble in a photodeveloper. These exposed areas of the photodefinable material can be washed away with a photodeveloper solvent, leaving the underlying material. Areas of the photodefinable material that are not exposed to light are insoluble in the photodeveloper. A copy of the desired pattern can be applied to the positive-acting photodefinable material.

[0105] In some embodiments, the photodefinable material may include a negative-acting photodefinable material. For a negative-acting photodefinable material, exposure may cause the chemical structure of the photodefinable material to polymerize, which has the opposite effect to a positive-acting photodefinable material. The negative-acting photodefinable material may become difficult to dissolve, rather than becoming more soluble. Therefore, the exposed negative-acting photodefinable material may remain, while the photoresist developer solution acts to remove the areas not exposed to light. The reverse pattern of the desired feature may be applied to the negative-acting photodefinable material.

[0106] Fig.12 Some embodiments according to the present disclosure illustrate singulated IC dies of a device wafer for use in a manufacturing process that includes a fourth operation for performing an exposure operation to create a pattern on one or more of an underfill layer or a protective cover film.

[0107] Fig.12 1200 illustrates the performance of an exposure operation to produce a pattern 1256 on one or more of the bottom fill layer 1114 or the protective cover film 1116. A pattern may refer to a design created on a material where some areas of the material change material properties of the material (e.g., cure the material) based on exposure of those areas to light, while other areas of the material do not have a change in the material's properties based on the absence of exposure. An exposure operation may refer to applying one or more wavelengths of light (or a range of wavelengths of light) to a photodefinable material. An exposure operation may create a pattern in or on a photodefinable material based on the exposure. In addition to the wavelength of light, in an exposure operation, one or more of the duration of the exposure or the exposure power may also be controlled.

[0108] In some embodiments and as shown, light source 1252 projects light 1254 through the bottom side of dicing tape 906 and through the open space to areas of bottom fill layer 1114 and protective cover film 1116 to form pattern 1256. Pattern 1256 represents areas of bottom fill layer 1114 and protective cover film 1116 (e.g., above deep etch streets) in dashed lines to show that bottom fill layer 1114 and protective cover film 1116 at those areas have been modified due to exposure of light 1254 through deep etch streets between singulated IC dies 1020. It should be noted that the deep etch streets of singulated IC dies 1020 can be used as a "dummy" mask in the exposure operation. In some embodiments where light 1254 is projected upward through the deep etch streets, one or more photodefinable materials included in bottom fill layer 1114 and protective cover film 1116 are positive-acting photodefinable materials. In some embodiments where light 1254 is projected upward through the deep etch streets, underfill layer 1114 is not transparent or is partially transparent to the wavelength of light used in the exposure operation.

[0109] In some embodiments and Fig.12 , both the bottom fill layer 1114 and the protective cover film 1116 include one or more photodefinable materials, so that an exposure operation can be used to form a pattern on the bottom fill layer 1114 and the protective cover film 1116. In other embodiments, one or more of the bottom fill layer 1114 or the protective cover film 1116 does not include a photodefinable material. For example, the bottom fill layer 1114 may include one or more photodefinable materials, and the protective cover film 1116 does not include a photodefinable material.

[0110] In some embodiments, to perform an exposure operation to produce a pattern on one or more of the bottom fill layer 1114 or the protective cover film 1116, light is projected through the top surface of the protective cover film 1116 to the bottom fill layer 1114 to form the pattern. For example, a masked (or maskless) exposure operation may project light from above the protective cover film 1116 to form the pattern. In such embodiments, one or more photodefinable materials of the bottom fill layer 1114 or the protective cover film 1116 may include positive-acting or negative-acting photodefinable materials. In some embodiments where light is projected from above the protective cover film 1116, at least the protective cover film 1116 is transparent or partially transparent to the wavelength of light used in the exposure operation.

[0111] Fig.13 Singulated IC dies of a device wafer for use in a manufacturing process that includes a fifth operation for removing an underfill layer and a protective cover film at areas overlying open spaces between sides of adjacent singulated IC dies are described according to some embodiments of the present disclosure.

[0112] Fig.13 1300 illustrates pattern-based removal of the underfill layer 1114 and the protective cover film 1116 at areas overlying the open spaces between sides of adjacent singulated IC dies 1020 to form portions of the protective cover film 1316 and portions of the underfill layer 1314 .

[0113] In some embodiments, in order to remove the bottom fill layer 1114 and the protective cover film 1116 at the area above the open space, a development operation may be performed. The development operation may include exposing the bottom fill layer 1114 and the protective cover film 1116 to a development solution (e.g., chemical removal) to remove the bottom fill layer 1114 and the protective cover film 1116 at the area above the open space (e.g., which has been patterned). For example, the solvent may include one or more of acetone or tetramethylammonium hydroxide (TMAH). In some embodiments, the development operation also includes a cleaning operation to clean loose particles generated by removing the bottom fill layer 1114 and the protective cover film 1116 at the area above the open space. For example, isopropyl alcohol (IPA) can be used to clean the loose particles.

[0114] Fig.14A Singulated IC dies of a device wafer for use in a manufacturing process that includes a sixth operation for removing one or more portions of a protective cover film are described according to some embodiments of the present disclosure.

[0115] Fig.14A The graph 1400 is similar to Figure 5A FIG500, and for the sake of brevity, all of the details are not repeated here. Figure 5A In some embodiments, one or more portions of protective cover film 1316 are removed from singulated IC die 1020. In some embodiments, as described, the debonding operation removes all portions of protective cover film 1316. After all portions of protective cover film 1316 are removed, singulated IC die 1020 can be removed from carrier 912 and used for subsequent operations, such as with respect to Figure 6 Described die stacking.

[0116] Fig. 14B Singulated IC dies of a device wafer for use in a manufacturing process that includes a seventh operation for removing one or more portions of a protective cover film are described according to some embodiments of the present disclosure.

[0117] Fig. 14B FIG. 1450 shows the selective removal of portions of the protective cover film 1316 . Fig. 14B Figure 1450 is similar to Figure 5B Figure 550, and for the sake of brevity, all of the above are not repeated here. Figure 5BDescription.

[0118] In some embodiments, one or more singulated IC die on carrier 912 may have corresponding portions of the protective cover film removed (e.g., a selective debonding operation) while other singulated IC die on carrier 912 do not have corresponding portions of the protective cover film removed. In some embodiments, a first portion of the protective cover film over a first singulated die may be removed. The first singulated die may be removed from carrier 912. After the first singulated IC die is removed from carrier 912, a second portion of the protective cover film over a second IC die is removed. In some embodiments, after the first singulated IC die is removed, as described with respect to Figure 6 As depicted, a first singulated IC die is stacked on top of another IC die.

[0119] In some embodiments, a portion of the protective cover film of a first singulated IC die of singulated IC die 1020 may be removed. An underfill layer of the first singulated IC die may remain. Carrier 912 may include an open area where a second singulated IC die was previously removed, wherein the second singulated IC die was removed prior to removing the protective cover film of the first singulated IC die. A third singulated IC die may also be oriented over carrier 912. The protective cover film and underfill layer over the third singulated IC die remain (e.g., when the first or second singulated IC die is removed from carrier 912), and protect the third singulated IC die and a portion of its underfill layer from contamination.

[0120] The following can be described Figures 1 to 6 and Figures 9 to 14B Elements to help illustrate Fig.15 Method 1500 of the present invention. Method 1500 may be performed as one or more operations. It may be noted that method 1500 may be performed in any order and may include the same, different, more or fewer operations. It may be noted that method 1500 may be performed by one or more pieces of semiconductor fabrication equipment or fabrication tools, hereinafter referred to as fabrication equipment.

[0121] Fig.15 A flow chart illustrating a manufacturing process using a protective cover film and an underfill layer over singulated IC dies is described according to some embodiments of the present disclosure.

[0122] In operation 1505 of method 1500, a fabrication facility provides a device wafer. The device wafer may include a plurality of uncut IC dies. In some embodiments, the device wafer may be disposed on a dicing tape of a carrier.

[0123] At operation 1510, the fabrication equipment separates the IC die from the device wafer to form singulated IC die. In some embodiments, the singulated IC die are positioned on a dicing tape to provide open spaces between sides of adjacent singulated IC die.

[0124] The fabrication equipment performs a cleaning operation at operation 1515. The cleaning operation may remove loose particles associated with separating the IC die from the device wafer.

[0125] At operation 1520, singulated IC dies are provided. In some embodiments, the singulated IC dies are disposed on a dicing tape of a carrier. As described above, the singulated IC dies are positioned on the dicing tape to provide open spaces between sides of adjacent singulated IC dies.

[0126] At operation 1525, the fabrication equipment places an underfill layer and a protective cover film over the open space between the sides of the singulated IC die and the adjacent singulated IC die. The protective cover film is positioned over the underfill layer. In some embodiments, the underfill layer and the protective cover film include one or more photo-definable materials.

[0127] In some embodiments, the manufacturing equipment separately places the bottom fill layer and the bottom fill layer. For example, the manufacturing equipment places the bottom fill layer on the open space above the singulated IC die and between the sides of the adjacent singulated IC die. The bottom fill layer includes one or more photo-definable materials. Then, the manufacturing equipment places a protective cover film on the bottom fill layer.

[0128] At operation 1530, the fabrication equipment performs an exposure operation. The exposure operation may produce a pattern on one or more of the underfill layer or the protective cover film.

[0129] In some embodiments, to perform an exposure operation to produce patterns on the underfill layer and the protective cover film, the fabrication equipment projects light through the underside of the dicing tape and through the open space to areas of the underfill layer and the protective cover above the open space to form the pattern.

[0130] In some embodiments, in order to perform an exposure operation to generate a pattern on the underfill layer and the protective cover film, the fabrication equipment projects light through the top surface of the protective cover film onto the underfill layer to form the pattern.

[0131] In some embodiments, an exposure operation is performed to create a pattern on the underfill layer.The protective cover film may or may not have a photodefinable material and may or may not be patterned using an exposure operation.

[0132] At operation 1535, the fabrication equipment removes the underfill layer and the protective cover film at areas over the open spaces. In some embodiments, the fabrication equipment removes the underfill layer and the protective cover film at areas over the open spaces between sides of adjacent singulated IC dies based on the pattern to form portions of the underfill layer and portions of the protective cover film disposed over the singulated IC dies.

[0133] In some embodiments, the fabrication equipment removes one or more portions of the protective cover film from the singulated IC dies. In some embodiments, removing one or more portions of the protective cover film exposes corresponding one or more portions of the underfill layer above the singulated IC dies.

[0134] In some embodiments, removing one or more portions of the protective cover film from the singulated IC dies includes removing portions of the protective cover film using a debonding operation that removes all portions of the protective cover film.

[0135] In some embodiments, removing one or more portions of the protective cover film from the singulated IC die includes removing a first portion of the protective cover film over a first singulated IC die. The first singulated IC die is removed from a carrier. The singulated IC die are oriented over the carrier. After the first singulated IC die is removed from the carrier, a second portion of the protective cover film over a second singulated IC die is removed.

[0136] In some embodiments, the fabrication equipment removes the singulated IC die with the corresponding portion of the protective cover film removed from the carrier. In some embodiments, the fabrication equipment stacks the singulated die on another IC die or a different object such as a substrate (e.g., a flip chip).

[0137] In some embodiments, the fabrication equipment removes the bottom fill layer at the areas above the open spaces between the sides of the singulated IC die based on the pattern to produce portions of the bottom fill layer disposed above the singulated IC die. The protective cover film at the areas may or may not be removed. The protective cover film may or may not include a photodefinable material and may or may not be singulated into portions of the protective cover film. In some cases, the protective cover film may be singulated into portions in addition to using a photodefinable material (e.g., a laser, a saw, etc.). In some embodiments, the protective cover film is removed before removing the bottom fill layer at the areas above the open spaces.

[0138] In some embodiments, the method includes: providing a singulated integrated circuit (IC) die on a dicing tape of a carrier, wherein the singulated IC die is positioned on the dicing tape to provide an open space between sides of adjacent singulated IC die; disposing an underfill layer over the open space between the sides of the singulated IC die and adjacent singulated IC die, wherein the underfill layer comprises one or more photo-definable materials; disposing a protective cover film over the underfill layer; performing an exposure operation to generate a pattern on the underfill layer; and based on the pattern, removing the underfill layer at an area over the open space between sides of adjacent singulated IC die to form a portion of the underfill layer disposed over the singulated IC die.

[0139] In some embodiments, the method further includes providing a device wafer on a dicing tape of a carrier, wherein the device wafer includes an IC die; and separating the IC die from the device wafer to form singulated IC dies. In some embodiments, the method, wherein performing an exposure operation to produce a pattern on the underfill layer includes projecting light through an underside of the dicing tape and open space to an area of ​​the underfill layer to form the pattern.

[0140] Fig.16 A computing device made according to an embodiment of the present disclosure. The computing device 1600 may include multiple components. In one embodiment, the components are attached to one or more circuit boards, such as a motherboard. In an alternative embodiment, some or all of these components are made onto a single system-on-chip (SoC) die, such as a SoC for a mobile device. In an embodiment, the components in the computing device 1600 include, but are not limited to, a stacked IC die 1602 and at least one communication logic unit 1608. In some embodiments, the communication logic unit 1608 is made in a separate integrated circuit chip, which may be bonded to a substrate or motherboard shared with or electrically coupled to the stacked IC die 1602. The stacked IC die 1602 may include, for example, an IC die 622B, an underfill 622A, an IC die 624B, an underfill layer 624A, and an IC die 628. It may be noted that in an embodiment, the stacked IC die 1602 may include additional elements (e.g., additional IC die on the stacked die, a processor, etc.). In another example, stacked IC die 1602 can include some or all of the elements described herein, as well as additional elements.

[0141] The computing device 1600 may include other components that may or may not be physically and electrically coupled to the motherboard or fabricated within the SoC die. These other components include, but are not limited to, volatile memory 1610 (e.g., DRAM), non-volatile memory 1612 (e.g., ROM or flash memory), a graphics processing unit 1614 (GPU), a digital signal processor 1616, an encryption processor 1642 (e.g., a dedicated processor that executes encryption algorithms within hardware), a chipset 1620, at least one antenna 1622 (in some embodiments, two or more antennas may be used), a display or touch screen display 1624 (e.g., may include the stacked IC die 602), a touch screen controller 1624, and a plurality of other components. 626, a battery 1628 or other power source, a power amplifier (not shown), a voltage regulator (not shown), a global positioning system (GPS) device 1627, a compass (not shown), a motion coprocessor or sensor 1632 (which may include an accelerometer, a gyroscope, and a compass) (not shown), a microphone (not shown), a speaker 1634, a camera 1636, a user input device 1638 (such as a keyboard, a mouse, a stylus, and a touchpad), and a mass storage device 1640 (such as a hard drive, a compact disk (CD)), a digital versatile disk (DVD), etc.). The computing device 1600 may incorporate other transmission, telecommunication, or radio functions not described herein. In some embodiments, the computing device 1600 includes a radio for communicating over a long distance by modulating and radiating electromagnetic waves in the air or space. In a further embodiment, the computing device 1600 includes a transmitter and a receiver (or a transceiver) for communicating over a long distance by modulating and radiating electromagnetic waves in the air or space.

[0142] The communication logic unit 1608 enables wireless communication for transmitting data to and from the computing device 1600. The term "wireless" and its derivatives may be used to describe circuits, devices, systems, methods, techniques, communication channels, etc., which can transfer data by using modulated electromagnetic radiation through non-solid media. The term does not mean that the associated device does not include any wires, although in some embodiments it may not. The communication logic unit 1608 may implement any of a variety of wireless standards or protocols, including but not limited to Wi-Fi (IEEE 802.11 series), WiMAX (IEEE 802.16 series), IEEE 802.20, Long Term Evolution (LTE), Ev-DO, HSPA+, HSDPA+, HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, infrared (IR), near field communication (NFC), Bluetooth and its derivatives, and any other wireless protocols designated as 3G, 4G, 5G and beyond 5G. The computing device 1600 may include multiple communication logic units 1608. For example, the first communication logic unit 1608 may be dedicated to shorter-range wireless communications, such as Wi-Fi, NFC, and Bluetooth, while the second communication logic unit 1608 may be dedicated to longer-range wireless communications, such as GPS, EDGE, GPRS, CDMA, WiMAX, LTE, Ev-DO, etc.

[0143] Processor 1604 (also referred to herein as a "processing device") may refer to any device or part of a device that processes electronic data from registers and / or memory to convert the electronic data into other electronic data that can be stored in registers and / or memory. Processor 1604 represents one or more general-purpose processing devices, such as a microprocessor, a central processing unit, etc. More specifically, processor 1604 may be a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, or a processor that implements other instruction sets or a number of processors that implement a combination of several instruction sets. Processor 1604 may also be one or more special-purpose processing devices, such as an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal processor (DSP), a network processor, and the like.

[0144] In various embodiments, computing device 1600 may be a laptop computer, a netbook computer, a notebook computer, an ultrabook computer, a smart phone, a non-smart phone, a tablet, a tablet / laptop hybrid product, a personal digital assistant (PDA), an ultra-mobile PC, a mobile phone, a desktop computer, a server, a printer, a scanner, a monitor, a set-top box, an entertainment control unit, a digital camera, a portable music player, or a digital video recorder. In other embodiments, computing device 1600 may be any other electronic device that processes data.

[0145] Some portions of the preceding detailed description have been presented in the form of algorithms and symbolic representations of operations on data bits within a computer memory. These algorithmic descriptions and representations are used by those skilled in the data processing arts as a means of conveying the essence of their work to others skilled in the art. An algorithm is here, and generally, conceived to be a self-consistent sequence of operations leading to a desired result. An operation is one requiring physical manipulation of physical quantities. Typically, but not necessarily, these quantities may take the form of electrical or magnetic signals capable of being stored, combined, compared, or otherwise manipulated. It has proven convenient at times, primarily for reasons of commonality, to refer to these signals as bits, values, elements, symbols, characters, terms, numbers, or the like.

[0146] It should be remembered, however, that all of these and similar terms are associated with the appropriate physical quantities and are merely convenient labels applied to these quantities. The present disclosure may refer to the actions and processes of a computer system or similar electronic computing device that manipulates and transforms data represented as physical (electronic) quantities within the computer system's registers and memories into other data similarly represented as physical quantities within the computer system's memories or registers or other such information storage systems.

[0147] The present disclosure also relates to an apparatus for performing the operations described herein. This apparatus may be specially constructed for a particular purpose, or it may comprise a general purpose computer selectively activated or reconfigured by a computer program stored in the computer. This computer program may be stored in a computer-readable storage medium, such as, but not limited to, any type of disk, including floppy disks, optical disks, CD-ROMs and magneto-optical disks, read-only memories (ROMs), random access memories (RAMs), EPROMs, EEPROMs, magnetic or optical cards, or any type of medium suitable for storing electronic instructions, each coupled to a computer system bus.

[0148] The algorithms or operations presented in the present invention are not inherently related to any particular computer or other device. According to the teachings herein, various general-purpose systems can be used with the program, or it may prove convenient to construct more specialized equipment to perform the method. The structure of various these systems will be described in the following description. In addition, the present disclosure is described without reference to any particular programming language. It should be understood that various programming languages ​​can be used to implement the teachings of the present disclosure as described herein.

[0149] The present disclosure may be provided as a computer program product or software, which may include a machine-readable medium having instructions stored thereon that can be used to program a computer system (or other electronic device) to perform processing according to the present disclosure. A machine-readable medium includes any mechanism for storing information in a form readable by a machine (e.g., a computer). In some embodiments, a machine-readable (e.g., computer-readable) medium includes a machine (e.g., computer) readable storage medium, such as a read-only memory ("ROM"), a random access memory ("RAM"), a magnetic disk storage medium, an optical storage medium, a flash memory component, etc.

[0150] The words "example" or "exemplary" are used herein to mean "an example, situation or illustration of use". Any aspect or design described herein as "example" or "exemplary" should not necessarily be considered preferred or advantageous over other aspects or designs. Rather, the purpose of using the words "example" or "exemplary" is to present concepts in a concrete way. As used in this application, the term "or" is intended to mean an inclusive "or" rather than an exclusive "or". That is, unless otherwise specified or clear from the context, "X includes A or B" is intended to mean any of the natural inclusive arrangements. That is, if X includes A; X includes B; or X includes both A and B, then "X includes A or B" is satisfied in any of the aforementioned situations. In addition, unless otherwise specified or clear from the context that it is directed to a singular form, the articles "a" and "an" as used in this application and the appended claims should generally be interpreted as meaning "one or more". In addition, the use of the terms "embodiment" or "one embodiment" or "implementation" or "one implementation" etc. throughout the text may or may not represent the same embodiment or implementation. One or more embodiments or implementations described herein may be combined in a specific embodiment or implementation. As used herein, the terms "first", "second", "third", "fourth", etc. are meant as marks for distinguishing different elements, and may not necessarily have ordinal meanings designated by their numbers.

[0151] As used herein, the terms "above," "on," "below," "between," and "on" refer to the relative position of one material layer or component with respect to other layers or components. For example, a layer disposed on, above, or below another layer may be in direct contact with the other layer, or may have one or more intervening layers. Additionally, a layer disposed between two layers may be in direct contact with the two layers, or may have one or more intervening layers. Conversely, a first layer that is "on" a second layer is in direct contact with the second layer. Similarly, unless expressly stated otherwise, a feature disposed between two features may be in direct contact with the adjacent feature, or may have one or more intervening layers.

[0152] In the foregoing description, embodiments of the present disclosure have been described with reference to specific example embodiments thereof. It will be apparent that various modifications may be made thereto without departing from the broader spirit and scope of the embodiments of the present disclosure as set forth in the appended claims. Therefore, the description and drawings should be considered illustrative rather than restrictive.

Claims

1. A method for protecting singulated integrated circuit (IC) dies during integrated circuit processing, comprising: providing singulated IC die on a dicing tape of a carrier, wherein the singulated IC die are positioned on the dicing tape to provide open spaces between sides of adjacent singulated IC die; disposing an underfill layer and a protective cover film over the open space between the sides of the singulated IC die and the adjacent singulated IC die, wherein the protective cover film is positioned over the underfill layer, wherein the underfill layer and the protective cover film comprise one or more photodefinable materials; performing an exposure operation to generate patterns on the bottom filling layer and the protective cover film; and The underfill layer and the protective cover film are removed at areas over the open spaces between the sides of the adjacent singulated IC dies according to the pattern to form portions of the underfill layer and portions of the protective cover film disposed over the singulated IC dies.

2. The method according to claim 1, further comprising: providing a device wafer on the dicing tape of the carrier, wherein the device wafer comprises an IC die; and The IC die is separated from the device wafer to form the singulated IC die.

3. The method according to claim 2, further comprising: A cleaning operation is performed to remove loose particles associated with the separation of the IC die from the device wafer.

4. The method according to claim 1, wherein performing the exposure operation to generate the pattern on the bottom filling layer and the protective cover film comprises: Light is projected through the bottom surface of the dicing tape and the open space to the areas of the bottom filling layer and the protective cover film to form the pattern.

5. The method according to claim 1, wherein performing the exposure operation to generate the pattern on the bottom filling layer and the protective cover film comprises: Light is projected through the top surface of the protective cover film to the underfill layer to form the pattern.

6. The method according to claim 1, further comprising: One or more portions of the protective cover film are removed from the singulated IC dies, wherein the removal of the one or more portions of the protective cover film exposes corresponding one or more portions of the underfill layer overlying the singulated IC dies.

7. The method of claim 6, wherein removing the one or more portions of the protective cover film from the singulated IC die comprises: A debonding operation is performed which removes all of the portions of the protective cover film.

8. The method of claim 6, wherein removing the one or more portions of the protective cover film from the singulated IC die comprises: removing a first portion of the protective cover film overlying the first singulated IC die; removing the first singulated IC die from the carrier; and After removing the first singulated IC die from the carrier, a second portion of the protective cover film overlying a second singulated IC die is removed.

9. The method according to claim 8, further comprising: After removing the first singulated IC die, the first singulated IC die is stacked on top of another IC die.

10. An apparatus for protecting singulated integrated circuit (IC) dies during integrated circuit processing, comprising: Carrier; singulated IC die positioned above the carrier, wherein the singulated IC die are positioned on the carrier to provide open spaces between sides of adjacent singulated IC die; and an underfill layer overlying the singulated IC dies; and a protective cover film located over the underfill layer, wherein the protective cover film is coupled to the underfill layer using an adhesive bond, wherein one or more of the underfill layer or protective cover film comprises a photodefinable material, and wherein an exposure operation of projecting light onto the underfill layer and protective cover film is used to produce a pattern on the one or more of the underfill layer or protective cover film.

11. The apparatus of claim 10, wherein the singulated IC die are separated from a device wafer located above the carrier.

12. The apparatus of claim 10, wherein the underfill layer comprises a non-conductive film, wherein the underfill layer and the protective cover film are laminated to the IC die.

13. The apparatus of claim 12 , wherein based on the pattern, the bottom fill layer and the protective cover film are removed at areas above the open spaces between the sides of the adjacent singulated IC dies to form portions of the bottom fill layer and portions of the protective cover film disposed above the singulated IC dies.

14. The apparatus of claim 13, wherein a portion of the protective cover film over a first one of the singulated IC die is removed, and wherein the underfill layer over the first singulated IC die remains.

15. The apparatus of claim 14, wherein the carrier includes an open area where a second one of the singulated IC die has been removed from the carrier.

16. The apparatus of claim 15, wherein a third one of the singulated IC die is oriented over the carrier, wherein the protective cover film and the underfill layer over the third singulated IC die remain.

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