Substrate processing method

Abstract

An object of the present invention is to improve the degree of freedom of an etching profile. The substrate processing method of the present invention includes the following steps: rotating a substrate; ejecting a first processing liquid onto a central portion of the rotating substrate using a central nozzle; and ejecting a second processing liquid onto an edge portion of the rotating substrate using an edge nozzle, the edge portion surrounding the central portion in a plan view; the edge nozzle ejects the second processing liquid from a direction inclined with respect to the main surface of the substrate in the direction of rotation of the substrate, and the edge nozzle ejects the second processing liquid onto the edge portion of the substrate at a position where, in a plan view, it is a position that advances half a turn in the direction of rotation of the substrate from a line connecting the center of the substrate and the central nozzle.

Description

Technical Field

[0001] The technology disclosed in the specification of this application relates to a substrate processing method. The substrate to be processed includes, for example, a semiconductor substrate, a substrate for a liquid crystal display device, a substrate for a flat panel display (FPD) such as an organic EL (electroluminescence) display device, a substrate for an optical disc, a substrate for a magnetic disk, a substrate for a magneto-optical disc, a substrate for a photomask, a ceramic substrate, or a substrate for a solar cell, etc. Background Art

[0002] Conventionally, in the manufacturing process of a semiconductor substrate (hereinafter simply referred to as "substrate"), various processes are performed on the substrate using a substrate processing apparatus. This process includes an etching process for removing the upper surface of the substrate.

[0003] [Background Art Documents]

[0004] [Patent Documents]

[0005] [Patent Document 1] Japanese Patent Publication No. 6064875 Summary of the Invention

[0006] [Problems to be Solved by the Invention]

[0007] In the etching process, various etching profiles are required. For example, an etching profile is sometimes required to offset the etching non-uniformity in the previous process.

[0008] Therefore, for example, an etching process with a large difference in etching profile between the central part and the edge part of the substrate is considered. Thus, while offsetting the etching non-uniformity, the substrate processing is performed.

[0009] The technology disclosed in the specification of this application is completed in view of the above problems, and is a technology for increasing the degree of freedom of the etching profile in substrate processing.

[0010] [Technical Means for Solving the Problems]

[0011] The first aspect of the technology related to the substrate processing method disclosed in the specification of the present application includes the following steps: rotating the substrate held by the substrate holding part; ejecting a first processing liquid onto the central part of the rotating substrate using a central nozzle; and ejecting a second processing liquid onto the edge part of the rotating substrate using an edge nozzle, where the edge part surrounds the central part in a plan view; the edge nozzle ejects the second processing liquid from a direction inclined with respect to the main surface of the substrate, along the rotation direction of the substrate, and the edge nozzle ejects the second processing liquid onto the edge part of the substrate at a position where, in a plan view, after advancing half a turn along the rotation direction of the substrate from the line connecting the center of the substrate and the central nozzle.

[0012] The second aspect of the technology disclosed in the specification of the present application includes the following steps: rotating the substrate held by the substrate holding part; ejecting a first processing liquid onto the central part of the rotating substrate using a central nozzle; ejecting a second processing liquid onto the edge part of the rotating substrate using an edge nozzle; detecting the radial width of the liquid film of the second processing liquid at the edge part of the substrate, i.e., the liquid film width; and controlling the rotation speed of the rotating substrate and the ejection amount of the second processing liquid ejected from the edge nozzle based on the detected liquid film width; the edge nozzle ejects the second processing liquid from a direction inclined with respect to the main surface of the substrate, along the rotation direction of the substrate.

[0013] The third aspect of the technology disclosed in the specification of the present application is related to the first or second aspect, where after forming a liquid film of the first processing liquid at the central part of the substrate, the edge nozzle ejects the second processing liquid.

[0014] The fourth aspect of the technology disclosed in the specification of the present application is related to any one of the first to third aspects, where the first processing liquid and the second processing liquid are different types of processing liquids.

[0015] The fifth aspect of the technology disclosed in the specification of the present application is related to any one of the first to fourth aspects, where the central nozzle can swing along the radial direction of the substrate.

[0016] [Advantages of the Invention]

[0017] According to the first to fifth aspects of the technology disclosed in the specification of the present application, the degree of freedom of the etching profile in substrate processing can be improved.

[0018] In addition, through the detailed description and drawings shown below, the objects, features, aspects, and advantages related to the technology disclosed in the specification of the present application are further clarified. Description of the Drawings

[0019] Figure 1It is a top view schematically showing a configuration example of a substrate processing apparatus according to an embodiment.

[0020] Figure 2 It is a diagram conceptually showing a configuration example of a control device of a substrate processing apparatus.

[0021] Figure 3 It is a side view schematically showing an example of a processing unit and its related configuration in a substrate processing apparatus according to an embodiment.

[0022] Figure 4 It is a side view showing an example of the positional relationship between an edge nozzle and a substrate.

[0023] Figure 5 It is a top view showing an example of the positional relationship between a central nozzle and an edge nozzle on the upper surface of a substrate.

[0024] Figure 6 It is a flowchart showing the operation of a processing unit during the operation of a substrate processing apparatus.

[0025] Figure 7 It is a top view showing an example of the positional relationship between a central nozzle and an edge nozzle on the upper surface of a substrate.

[0026] Figure 8 It is a top view showing an example of the positional relationship between a central nozzle and an edge nozzle on the upper surface of a substrate.

[0027] Figure 9 It is a top view showing an example of the liquid film width of a processing liquid ejected from an edge nozzle. Detailed implementation manners

[0028] Hereinafter, embodiments will be described with reference to the drawings. In the following embodiments, detailed features and the like are shown for the purpose of technical explanation, but these are only examples and not necessarily essential features for implementing the embodiments.

[0029] In addition, the drawings are schematically shown, and for the sake of convenience of explanation, the configurations are appropriately omitted or simplified in the drawings. Also, the mutual relationships of the sizes and positions of the configurations shown in different drawings are not necessarily accurately described and can be appropriately changed. In addition, even in drawings such as top views rather than cross-sectional views, in order to facilitate understanding of the content of the embodiments, hatching may sometimes be marked.

[0030] In addition, in the following description, the same reference numerals are used to denote the same constituent elements in the drawings, and the same applies to their names and functions. Therefore, for the purpose of avoiding repetition, the detailed description of these constituent elements is sometimes omitted.

[0031] In addition, in the following descriptions, when it is described that a certain component "comprises", "includes", or "has" something, unless otherwise specified, it is not an exclusive expression that excludes the existence of other components.

[0032] In addition, in the following descriptions, although ordinal numbers such as "first" or "second" may sometimes be used, these terms are used to facilitate understanding of the content of the embodiments, and there is not necessarily a correlation such as an order that may be generated by the use of ordinal numbers between them.

[0033] In addition, in the following descriptions, regarding expressions indicating relative positional relationships or absolute positional relationships, such as "in one direction", "along one direction", "parallel", "orthogonal", "center", "concentric", or "coaxial", etc., unless otherwise specified, it includes the following two cases, namely, the case that strictly represents the positional relationship; and the case where the angle or distance is displaced within the tolerance or within the range where the same degree of function can be obtained.

[0034] In addition, in the following descriptions, expressions indicating an equal state, such as "same", "equal", "uniform", or "homogeneous", etc., unless otherwise specified, include the following two cases, namely, the case that strictly represents the equal state; and the case where differences occur within the tolerance or within the range where the same degree of function can be obtained.

[0035] In addition, in the following descriptions, although terms indicating specific positions or directions such as "upper", "lower", "left", "right", "side", "bottom", "front", or "back" may sometimes be used, these terms are used to facilitate understanding of the content of the embodiments and are not related to the actual position or direction during implementation.

[0036] In addition, in the following descriptions, when it is described as "the upper surface of..." or "the lower surface of...", in addition to representing the upper surface itself or the lower surface itself of the component as the object, it also includes the state where other components are formed on the upper surface or the lower surface of the component as the object. That is, for example, when it is described as "B provided on the upper surface of A", it does not prevent another component "C" from being interposed between A and B.

[0037] <Embodiment>

[0038] Hereinafter, a substrate processing apparatus and a substrate processing method according to this embodiment will be described.

[0039] <Regarding the Configuration of the Substrate Processing Apparatus>

[0040] Figure 1 It is a top view schematically showing a configuration example of the substrate processing apparatus 1 according to Embodiment 1. As Figure 1As illustrated, the substrate processing apparatus 1 includes a carrier placement unit 3, an indexing robot IR, a central robot CR, a control device 9 (controller), and at least one processing unit 7 ( Figure 1 There are 4 processing units). The plurality of processing units 7 are used to process the substrate W (wafer).

[0041] The substrate processing apparatus 1 is a single-chamber apparatus capable of substrate processing, such as a wet etching apparatus. The substrate processing apparatus 1 has a chamber 80. By controlling the gas atmosphere in the chamber 80, substrate processing can be performed in a desired gas atmosphere. The control device 9 can control the operations of the respective units included in the substrate processing apparatus 1. Each carrier CA is a container for accommodating the substrate W. The carrier placement unit 3 is a mechanism for holding a plurality of carriers CA. The indexing robot IR can transfer the substrate W between the carrier placement unit 3 and the substrate placement unit PS. The central robot CR can transfer the substrate W from either the substrate placement unit PS or at least one of the processing units 7 to the other. With the above configuration, the indexing robot IR, the substrate placement unit PS, and the central robot CR function as transfer mechanisms for transferring the substrate W between the respective processing units 7 and the carrier placement unit 3.

[0042] The unprocessed substrate W is taken out from the carrier CA by the indexing robot IR and transferred to the central robot CR via the substrate placement unit PS. The central robot CR transfers the unprocessed substrate W into the processing unit 7. The processing unit 7 processes the substrate W. The processed substrate W is taken out from the processing unit 7 by the central robot CR, and after passing through other processing units 7 as needed, is transferred to the indexing robot IR via the substrate placement unit PS. The indexing robot IR transfers the processed substrate W into the carrier CA. As described above, the substrate W is processed.

[0043] <Regarding the control device>

[0044] Figure 2 is a diagram conceptually showing a configuration example of the control device 9 of the substrate processing apparatus 1. The control device 9 is connected to the indexing robot IR, the central robot CR, and the processing unit 7 in a communicable manner.

[0045] The control device 9 includes a control unit 90 that controls the operations of the respective operation units in the indexing robot IR, the central robot CR, and the processing unit 7. In addition, the control device 9 may include a detection unit 91. The detection unit 91 refers to the processing recipe of the substrate W stored in the storage medium described later and detects the set value of the substrate processing performed in the processing unit 7. In addition, the detection unit 91 detects the set value of the substrate processing performed in the processing unit 7 by performing image analysis based on the image captured by the camera described later. In this case, the control unit 90 can control the operations of the respective operation units in the processing unit 7 with reference to the set value detected by the detection unit 91.

[0046] The control device 9 is implemented by a central processing unit (CPU) that executes various processes, a random access memory (RAM) that serves as a work area for arithmetic processing, a storage medium such as a fixed disk, etc. The storage medium stores various information in advance. The storage medium stores, for example, information related to the operating conditions of the indexing robot IR, the central robot CR, and the processing unit 7. The information related to the operating conditions of the processing unit 7 is, for example, a processing recipe (processing program) for processing the substrate W. The storage medium stores, for example, information for identifying each substrate W.

[0047] <Regarding the processing unit>

[0048] Figure 3 FIG. is a side view schematically showing an example of the processing unit 7 and its related components in the substrate processing apparatus 1 of the present embodiment.

[0049] The substrate processing apparatus 1 includes: a rotary chuck 10 that holds one substrate W in a substantially horizontal posture and rotates the substrate W about a vertical rotation axis Z1 passing through the central portion of the substrate W; a central nozzle 20 that mainly ejects a processing liquid 120 toward the central portion of the substrate W; a processing liquid supply source 29 that supplies the processing liquid 120 to the central nozzle 20; a valve 25 that switches the supply and supply stop of the processing liquid 120 from the processing liquid supply source 29 to the central nozzle 20; a nozzle arm 22 having the central nozzle 20 mounted at its end; an edge nozzle 50 that mainly ejects a processing liquid 150 toward the edge portion of the substrate W (i.e., the portion other than the central portion of the substrate W that surrounds the central portion of the substrate W when viewed from above); a processing liquid supply source 59 that supplies the processing liquid 150 to the edge nozzle 50; a valve 55 that switches the supply and supply stop of the processing liquid 150 from the processing liquid supply source 59 to the edge nozzle 50; a nozzle arm 52 having the edge nozzle 50 mounted at its end; a cylindrical processing shroud 12 that surrounds the rotary chuck 10 about the rotation axis Z1 of the substrate W; and a camera 70, such as a CMOS (Complementary Metal Oxide Semiconductor) camera or a CCD (Charge Coupled Device) camera, etc., that mainly photographs the edge portion of the substrate W from above.

[0050] Here, Figure 3 in, the central nozzle 20 is shown ejecting the processing liquid 120 in a direction orthogonal to the upper surface of the substrate W, but the ejection direction of the central nozzle 20 is not limited to Figure 3 the case shown. In addition, the edge portion of the substrate W refers to, for example, a range of about 10 mm from the outer periphery of the substrate W.

[0051] In addition, the processing liquid 120 or the processing liquid 150 can be, for example, a liquid containing at least one of sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, pure water (DIW), hydrogen peroxide water, organic acids (such as citric acid or oxalic acid, etc.), organic bases (such as tetramethylammonium hydroxide (TMAH), etc.), surfactants, and corrosion inhibitors. As examples of the liquid medicine obtained by mixing them, a mixed solution of sulfuric acid and hydrogen peroxide water (SPM), a mixed solution of ammonia and hydrogen peroxide water (SC1), a diluted hydrofluoric acid (DHF) obtained by diluting hydrofluoric acid (HF) with pure water, etc. can be cited.

[0052] In addition, the processing liquid 120 supplied from the processing liquid supply source 29 and the processing liquid 150 supplied from the processing liquid supply source 59 can be the same type of processing liquid or different types of processing liquids.

[0053] The rotating chuck 10 includes: a disk-shaped rotating base 10A facing the lower surface of the substrate W in a substantially horizontal posture; a plurality of chuck pins 10E clamping the substrate W from the outer peripheral portion of the rotating base 10A; a rotating shaft 10C extending downward from the central portion of the rotating base 10A; and a rotating motor 10D rotating the substrate W held on the rotating base 10A by rotating the rotating shaft 10C. The plurality of chuck pins 10E are arranged at equal intervals along the circumference of the circular substrate W. In addition, an adsorption chuck that vacuum-adsorbs the lower surface of the substrate W can be used instead of the rotating chuck 10.

[0054] The nozzle arm 22 includes an arm portion 22A, a shaft body 22B, and an actuator 22C. The actuator 22C adjusts the angle of the shaft body 22B around the axis. One end portion of the arm portion 22A is fixed to the shaft body 22B, and the other end portion of the arm portion 22A is arranged away from the axis of the shaft body 22B. In addition, a central nozzle 20 is installed at the other end portion of the arm portion 22A. By adjusting the angle of the shaft body 22B using the actuator 22C, the central nozzle 20 is configured to be able to swing along the radial direction of the substrate W. In addition, the moving direction of the central nozzle 20 caused by the swing only needs to have a component in the radial direction of the substrate W and does not need to be strictly parallel to the radial direction of the substrate W.

[0055] The nozzle arm 52 includes an arm portion 52A and a base portion 52B. One end portion of the arm portion 52A is fixed to the base portion 52B, and an edge nozzle 50 is installed at the other end portion of the arm portion 52A. The arrangement position of the nozzle arm 52 can be changed along the circumferential direction of the processing hood 12. In addition, Figure 3 The edge nozzle 50 is shown fixed at the position where the nozzle arm 52 is arranged, but the nozzle arm 52 can also hold the edge nozzle 50 in a swingable manner like the nozzle arm 22.

[0056] In addition, in the above example, the number of nozzles in the processing unit 7 is set to two, but nozzles for ejecting a processing liquid may be further provided at the center or the edge of the substrate W.

[0057] Figure 4 FIG. is a side view showing an example of the positional relationship between the edge nozzle 50 and the substrate W. As Figure 4 illustrated, the ejection direction X1 of the processing liquid ejected from the edge nozzle 50 is inclined at an acute angle θ with respect to the upper surface of the substrate W.

[0058] By ejecting the processing liquid onto the substrate W at such an angle, for example, compared with the case where the ejection direction X1 is orthogonal to the upper surface of the substrate W, the amount of the ejected processing liquid splashing on the upper surface of the substrate W can be reduced.

[0059] Figure 5 FIG. is a top view showing an example of the positional relationship between the center nozzle 20 and the edge nozzle 50 on the upper surface of the substrate W. As Figure 5 illustrated, the center nozzle 20 can swing along a path Y1 around the shaft body 22B. On the other hand, the edge nozzle 50 can be arranged at any position in the circumferential direction of the substrate W.

[0060] Here, preferably, the ejection direction X1 of the processing liquid ejected from the edge nozzle 50 is parallel to the rotation direction of the substrate W at the position where the processing liquid is to be ejected (i.e., the direction tangent to the outer periphery of the substrate W at this position) in a top view. When the ejection direction X1 is the above direction, the processing liquid is ejected along the rotation direction of the substrate W, so that splashing of the processing liquid on the substrate W can be suppressed. In addition, when the ejection direction X1 is the above direction, the ejected processing liquid hardly flows in the radial direction of the substrate W. Therefore, it is possible to suppress the processing liquid from being bounced off by the chuck pin 10E holding the substrate W and scattered from the outer peripheral portion of the rotary base 10A.

[0061] <Regarding the operation of the substrate processing apparatus>

[0062] Next, with reference to Figure 6 an operation example of the substrate processing apparatus 1 will be described. In addition, Figure 6 FIG. is a flowchart showing the operation of the processing unit in the operation of the substrate processing apparatus.

[0063] The indexing robot IR transfers the substrate W from the carrier CA on the carrier placement unit 3 to the substrate placement unit PS. The central robot CR transfers the substrate W from the substrate placement unit PS to one processing unit 7. The processing unit 7 processes the substrate W. The central robot CR transfers the substrate W from the processing unit 7 to the substrate placement unit PS. The indexing robot IR transfers the substrate W from the substrate placement unit PS to the carrier CA on the carrier placement unit 3.

[0064] As for the substrate processing in the processing unit 7, first, a chemical solution is supplied to the upper surface of the substrate W, and a prescribed chemical solution treatment is performed (step ST01 in Figure 6 ). Then, pure water (DIW) or the like is supplied to the upper surface of the substrate W, and a rinsing treatment is performed (step ST02 in Figure 6 ). Further, the pure water is flung off by rotating the substrate W at a high speed, thereby drying the substrate W (step ST03 in Figure 6 ).

[0065] Regarding the chemical solution treatment in the substrate processing, a prescribed treatment liquid is ejected from the central nozzle 20 and the edge nozzle 50 onto the upper surface of the substrate W held and rotated by the rotating chuck 10. The type, ejection amount, concentration, temperature, or ejection timing of the treatment liquid ejected from the central nozzle 20 and the edge nozzle 50 is controlled by the control unit 90 in the control device 9 according to the treatment recipe stored in the storage medium.

[0066] For example, the same type of treatment liquid (such as SPM) is ejected from the central nozzle 20 and the edge nozzle 50 at the same or different timings. At this time, by making the concentration or temperature of the treatment liquid ejected from the central nozzle 20 and the edge nozzle 50 different, the etching rates of the central portion and the edge portion of the substrate W can be made different. Therefore, even if, for example, it is known from the treatment recipe that the etching rates of the central portion and the edge portion of the substrate W are uneven before the previous process (dry etching process or the like), this unevenness can be offset in this process.

[0067] In addition, for example, different types of treatment liquids (such as a combination of SPM and pure water) are ejected from the central nozzle 20 and the edge nozzle 50 at the same or different timings. In this way, a large difference can be made in the etching rates of the central portion and the edge portion of the substrate W. Therefore, even if, for example, it is known from the treatment recipe that the etching rates of the central portion and the edge portion of the substrate W are uneven before the previous process (dry etching process or the like), this unevenness can be offset in this process.

[0068] In addition, when performing substrate processing, the central nozzle 20 can be fixed above the central portion of the substrate W, or can be swung in the radial direction of the substrate W by adjusting the angle of the shaft body 22B using the actuator 22C.

[0069] In addition, it is preferable that the timing of ejecting the treatment liquid from the edge nozzle 50 is after the liquid film formed by the treatment liquid ejected from the central nozzle 20 extends to the central portion of the upper surface of the substrate W. If it is in such a state, the central portion of the upper surface of the substrate W is not easily affected by the treatment liquid ejected from the edge nozzle 50, and thus defects in the central portion of the substrate W due to the action of this treatment liquid can be suppressed.

[0070] <Regarding the ejection position of the treatment liquid from the edge nozzle>

[0071] Next, the ejection position of the processing liquid of the edge nozzle 50 will be described. As described above, the edge nozzle 50 can be arranged at any position in the circumferential direction of the substrate W. However, when the processing liquid ejected from the central nozzle 20 diffuses on the upper surface of the substrate W, it is preferable that the edge nozzle 50 is arranged to eject the processing liquid from the edge nozzle 50 to a portion where the liquid film formed by the processing liquid ejected from the central nozzle 20 becomes relatively thin.

[0072] Figure 7 It is a top view showing an example of the positional relationship between the central nozzle 20 and the edge nozzle 50 on the upper surface of the substrate W.

[0073] When the central nozzle 20 is arranged at the Figure 7 position shown, the processing liquid ejected from the central nozzle 20 diffuses in the direction of the rotation direction R1 of the substrate W to form a liquid film. At this time, the processing liquid ejected from the central nozzle 20 gradually flows toward the edge portion of the substrate W due to the centrifugal force generated by the rotation of the substrate W, flows down from the outer periphery of the substrate W, and at the same time, the liquid film on the upper surface of the substrate W also becomes thinner.

[0074] In this way, it is preferable that the edge nozzle 50 is arranged to eject the processing liquid, for example, to a position that is a position along the rotation direction R1 compared to the edge portion of the substrate W on the straight line D1 connecting the central nozzle 20 and the center position CP of the substrate W and on the side opposite to the center position CP with respect to the central nozzle 20 (that is, the edge portion of the substrate W at the position where it advances half a turn along the rotation direction R1 from the position of the central nozzle 20).

[0075] Figure 7 In, since the edge nozzle 50 is arranged at the position as described above, the processing liquid ejected from the edge nozzle 50 is ejected to a portion where the liquid film formed by the processing liquid ejected from the central nozzle 20 becomes relatively thin. In this case, the processing liquid ejected from the edge nozzle 50 is not easily disturbed by the processing liquid ejected from the central nozzle 20, so the processing liquid ejected from the edge nozzle 50 reaches the upper surface of the substrate W and easily acts on the upper surface of the substrate W. Therefore, the processing effect of the processing liquid ejected from the edge nozzle 50 is improved. For example, even in a substrate process where the etching rate difference between the central portion and the edge portion of the substrate W is large, the interference between the processing liquid ejected from the central nozzle 20 and the processing liquid ejected from the edge nozzle 50 is suppressed, and it is easy to achieve the desired etching rate.

[0076] Figure 8 It is a top view showing an example of the positional relationship between the central nozzle 20 and the edge nozzle 50 on the upper surface of the substrate W.

[0077] When the central nozzle 20 is arranged at Figure 8In the case of the position shown, the processing liquid ejected from the central nozzle 20 diffuses in the direction of the rotation direction R1 of the substrate W to form a liquid film. At this time, the processing liquid ejected from the central nozzle 20 gradually flows toward the edge portion of the substrate W due to the centrifugal force generated by the rotation of the substrate W, and flows down from the outer periphery of the substrate W. At the same time, the liquid film on the upper surface of the substrate W also continuously thins.

[0078] Thus, it is preferable that the edge nozzle 50 is arranged, for example, to eject the processing liquid toward a position that is the edge portion of the substrate W on the opposite side of the center position CP with respect to the straight line D2 connecting the central nozzle 20 and the center position CP of the substrate W (i.e., the edge portion of the substrate W at the position where it advances half a turn along the rotation direction R1 from the position of the central nozzle 20), and is a position advancing along the rotation direction R1.

[0079] <Regarding the control of the liquid film width of the processing liquid of the edge nozzle>

[0080] Figure 9 is a top view showing an example of the liquid film width W1 of the processing liquid 150 ejected from the edge nozzle 50. In addition, Figure 9 the exemplified liquid film width W1 of the processing liquid 150 is only an example including the ratio of the liquid film width W1 to the entire substrate W.

[0081] As Figure 9 exemplified, the processing liquid 150 ejected from the edge nozzle 50 diffuses in the rotation direction R1 of the substrate W and also diffuses toward the inner and outer sides in the radial direction of the substrate W. Here, the width of the liquid film formed by the diffusion of the processing liquid 150 ejected from the edge nozzle 50 in the radial direction of the substrate W is defined as the liquid film width W1.

[0082] The liquid film width W1 can be controlled by any one of the following methods or a combination thereof. In addition, this control is performed by the control device 9.

[0083] As the first method, first, the liquid film formed on the upper surface of the substrate W is photographed using the camera 70 (refer to Figure 3 ). Then, the image data of the image photographed by the camera 70 is input into the detection unit 91 in the control device 9 (refer to Figure 2 ). Then, the detection unit 91 detects the liquid film width W1 by performing image analysis on this image data.

[0084] Next, the control unit 90 in the control device 9 refers to the liquid film width W1 detected by the detection unit 91 and adjusts the rotation speed of the substrate W and the ejection amount of the processing liquid 150 ejected from the edge nozzle 50.

[0085] Specifically, when making the width W1 of the liquid film narrower, the control unit 90 increases the rotation speed of the substrate W to increase the centrifugal force of the substrate W. On the other hand, when making the width W1 of the liquid film wider, the control unit 90 decreases the rotation speed of the substrate W to decrease the centrifugal force of the substrate W. Then, when the rotation speed of the substrate W has been increased, the ejection amount of the processing liquid 150 is reduced as needed. On the other hand, when the rotation speed of the substrate W has been decreased, the ejection amount of the processing liquid 150 is increased as needed. Furthermore, when the ejection amount of the processing liquid 150 has been reduced, the concentration or temperature of the processing liquid 150 can be increased. Similarly, when the ejection amount of the processing liquid 150 has been increased, the concentration or temperature of the processing liquid 150 can be decreased.

[0086] As the second method, first, the detection unit 91 in the control device 9 refers to a processing recipe for processing the substrate W from a storage medium or the like of the control device 9. Then, based on the etching profile or the like of the processing recipe corresponding to this process, the width W1 of the liquid film that should be formed by the processing liquid 150 is detected.

[0087] Next, the control unit 90 in the control device 9 adjusts the rotation speed of the substrate W and the ejection amount of the processing liquid 150 ejected from the edge nozzle 50 while referring to the liquid film width W1 detected by the detection unit 91 and a corresponding table described later.

[0088] Here, the corresponding table is a table showing the relationship between the liquid film width W1 formed by the processing liquid 150, the rotation speed of the substrate W, and the ejection amount of the processing liquid 150, and is prepared in advance through experiments or the like.

[0089] By controlling the liquid film width W1 of the processing liquid 150 ejected from the edge nozzle 50, the range of the etching rate determined by the processing liquid 150 can be specified with high precision, and thus the desired etching profile can be achieved.

[0090] <Regarding the effects produced by the above-described embodiments>

[0091] Next, examples of the effects produced by the above-described embodiments are shown. In addition, in the following description, the effects are described based on the specific configurations exemplified in the above-described embodiments. However, within the range of producing the same effects, they can be replaced with other specific configurations exemplified in the specification of the present application.

[0092] According to the above-described embodiments, the substrate processing method includes the following steps: rotating the substrate W held by the substrate holding portion; ejecting a first processing liquid onto the central portion of the rotating substrate W using the central nozzle 20; and ejecting a second processing liquid onto the edge portion of the rotating substrate W using the edge nozzle 50. Here, the substrate holding portion corresponds to, for example, the rotating chuck 10 or the like. In addition, the first processing liquid corresponds to, for example, the processing liquid 120 or the like. In addition, the second processing liquid corresponds to, for example, the processing liquid 150 or the like. Here, the edge nozzle 50 ejects the processing liquid 150 from a direction inclined at an angle θ with respect to the main surface of the substrate W, along the rotation direction of the substrate W. In addition, the edge nozzle 50 ejects the processing liquid 150 onto the edge portion of the substrate W at a position that, when viewed from above, is the position after advancing half a turn along the rotation direction of the substrate W from the straight line D1 connecting the center position CP of the substrate W and the central nozzle 20.

[0093] With such a configuration, the degree of freedom of the etching profile can be improved. Specifically, the processing liquid 150 ejected from the edge nozzle 50 is ejected onto a portion where the liquid film formed by the processing liquid 120 ejected from the central nozzle 20 becomes relatively thinner. Therefore, the processing liquid 150 is not easily disturbed by the processing liquid 120, so the processing liquid 150 easily reaches the upper surface of the substrate W and acts on the upper surface of the substrate W. Therefore, the processing effect of the processing liquid 150 is improved, and it is easy to achieve a desired etching rate, such as a large difference in etching rate between the central portion and the edge portion of the substrate W. As a result, for example, the shape of the focus ring used to equalize the etching rate of dry etching changes due to this dry etching. Even when the etching process, such as uneven etching gas concentration at the edge portion of the substrate W, is the previous process, by performing an etching process with a large difference in etching profile between the central portion and the edge portion of the substrate, it is possible to perform substrate processing while canceling out etching non-uniformity.

[0094] In addition, when there are no particular restrictions, the execution order of each process can be changed.

[0095] In addition, even when other configurations exemplified in the present application specification are added to the above-described configuration, that is, when other configurations in the present application specification that are not mentioned as the above-described configuration are appropriately added, the same effect can be obtained.

[0096] In addition, according to the above-described embodiment, the substrate processing method includes the following steps: rotating the substrate W held by the rotating chuck 10; ejecting the processing liquid 120 onto the central portion of the rotating substrate W using the central nozzle 20; ejecting the processing liquid 150 onto the edge portion of the rotating substrate W using the edge nozzle 50; detecting the radial width of the liquid film of the processing liquid 150 at the edge portion of the substrate W, i.e., the liquid film width W1; and controlling the rotation speed of the rotating substrate W and the ejection amount of the processing liquid 150 from the edge nozzle 50 based on the detected liquid film width W1. Here, the edge nozzle 50 ejects the processing liquid 150 in the direction of the inclination angle θ with respect to the main surface of the substrate W, along the rotation direction of the substrate W.

[0097] With such a configuration, the degree of freedom of the etching profile can be improved. Specifically, by controlling the liquid film width W1 of the processing liquid 150 ejected from the edge nozzle 50, the range of the etching rate determined by the processing liquid 150 can be accurately determined, and thus the desired etching profile can be achieved.

[0098] In addition, without particular limitation, the execution order of each process can be changed.

[0099] In addition, even when other configurations exemplified in the present application specification are added to the above-described configuration, that is, when other configurations in the present application specification not mentioned as the above-described configuration are appropriately added, the same effect can be obtained.

[0100] In addition, according to the above-described embodiment, after the liquid film of the processing liquid 120 is formed at the central portion of the substrate W, the edge nozzle 50 ejects the processing liquid 150. With such a configuration, the central portion of the upper surface of the substrate W is not easily affected by the processing liquid ejected from the edge nozzle 50, and thus defects in the central portion of the substrate W caused by the action of the processing liquid 150 can be suppressed.

[0101] In addition, according to the above-described embodiment, the processing liquid 120 and the processing liquid 150 are different types of processing liquids. With such a configuration, the etching rate can be made to vary significantly between the central portion and the edge portion of the substrate W.

[0102] In addition, according to the above-described embodiment, the central nozzle 20 can swing in the radial direction of the substrate W. With such a configuration, the processing liquid 120 ejected from the central nozzle 20 can be quickly and evenly diffused.

[0103] <Examples of Variations of the Above-Described Embodiment>

[0104] In the above-described embodiments, in order to offset the non-uniformity of the etching rate predicted according to the processing recipe, the ejection amount, concentration, temperature, etc. of the processing liquid of the central nozzle 20 and the edge nozzle 50 are controlled. Before performing substrate processing using the central nozzle 20 and the edge nozzle 50, the thickness of the film formed on the upper surface of the substrate W or the depth of the groove, etc. can be actually measured using an optical sensor or the like, and the ejection amount, concentration, temperature, etc. of the processing liquid of the central nozzle 20 and the edge nozzle 50 are controlled by referring to the actually measured values.

[0105] In the above-described embodiments, there are cases where the material, material, size, shape, relative arrangement relationship, or implementation conditions, etc. of each component are described, but these are only examples in all forms and are not limited to the content described in the specification of the present application.

[0106] Therefore, countless unillustrated variations and equivalents are assumed within the technical scope disclosed in the specification of the present application. For example, cases where at least one component is changed, cases where at least one component is added, or cases where at least one component is omitted.

[0107] In addition, in the above-described embodiments, when the material name, etc. is described without specific designation, as long as there is no contradiction, other additives such as alloys can also be included in the material.

[0108] [Description of symbols]

[0109] 1: Substrate processing apparatus

[0110] 3: Carrier mounting part

[0111] 7: Processing unit

[0112] 9: Control device

[0113] 10: Rotating chuck

[0114] 10A: Rotating base

[0115] 10C: Rotating shaft

[0116] 10D: Rotating motor

[0117] 10E: Chuck pin

[0118] 12: Processing shield

[0119] 20: Central nozzle

[0120] 22, 52: Nozzle arm

[0121] 22A, 52A: Arm part

[0122] 22B: Shaft body

[0123] 22C: Actuator

[0124] 25, 55: Valve

[0125] 29, 59: Processing liquid supply source

[0126] 50: Edge nozzle

[0127] 52B: Base

[0128] 70: Camera

[0129] 80: Chamber

[0130] 90: Control unit

[0131] 91: Detection unit

[0132] 120, 150: Processing liquid.

Claims

1. A substrate processing method, comprising the following steps: Rotating the substrate held by the substrate holding part; Spraying a first processing liquid from a central nozzle onto the rotating substrate, and at the same time moving the central nozzle from the central part of the substrate toward the radial direction of the substrate; A second processing liquid is ejected onto an edge portion of the rotating substrate by an edge nozzle, and in a plan view, the edge portion surrounds the central portion; and the edge nozzle ejects the second processing liquid in a direction inclined with respect to the main surface of the substrate, along the rotation direction of the substrate; and the edge nozzle ejects the second processing liquid to a position which is a position on the edge portion of the substrate further advanced in the rotation direction than a position after advancing half a turn in the rotation direction from a position after the central nozzle has moved from the central portion of the substrate toward the radial direction in a plan view.

2. The substrate processing method according to claim 1, wherein After forming a liquid film of the first processing liquid at the central part of the substrate, the edge nozzle sprays the second processing liquid.

3. The substrate processing method according to claim 1, wherein The first processing liquid and the second processing liquid are different types of processing liquids.

4. The substrate processing method according to claim 1, wherein The central nozzle can swing along the radial direction of the substrate.

5. The substrate processing method according to claim 1, wherein The first processing liquid and the second processing liquid are the same type of processing liquid.

6. The substrate processing method according to claim 1, wherein The second processing liquid sprayed from the edge nozzle diffuses in the rotation direction of the substrate, and at the same time also diffuses toward the inner and outer sides of the radial direction of the substrate.

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