A device for detecting metal distance in a high temperature environment

Abstract

The present invention discloses a device for detecting the distance of metal in a high temperature environment, comprising a positive feedback coil module and a resonance signal processing module, wherein the positive feedback coil module is placed in a high temperature environment, the resonance signal processing module is placed in a low temperature environment, and the positive feedback coil module is connected to the resonance signal processing module through an electrical signal. The present invention separates the resonance signal processing module from the positive feedback coil module, and during installation, the feedback coil detection end is placed in a high temperature environment, and the resonance signal processing module is placed in a low temperature environment, thereby realizing the function of detecting the distance of a high temperature metal object, which greatly facilitates the detection of the distance of a high temperature metal.

Description

Technical Field

[0001] The invention relates to the technical field of high-temperature metal detection, in particular to a device for detecting metal distance in a high-temperature environment. Background Art

[0002] The metal detector is an electromagnetic detection device used to identify the presence of metal and the distance of the metal from the coil. It uses an oscillation module as a detection device, and the principle of oscillation difference in the positive feedback electromagnetic oscillation circuit under different loads to achieve metal distance detection. The high temperature resistant coil and oscillation circuit are separated to achieve high temperature metal detection. The metal detector includes an electromagnetic oscillation circuit, a signal filtering circuit and a digital processing circuit.

[0003] At present, the common devices for detecting metal distance on the market basically work at room temperature, which is not suitable for the detection of some high-temperature metals, limiting the presence and distance detection of metal distance materials in high-temperature environments. For this reason, we propose a device for detecting metal distance in high-temperature environments. Summary of the invention

[0004] The purpose of the present invention is to provide a device for detecting metal distance in a high temperature environment to solve the problems raised in the above background technology.

[0005] To achieve the above object, the present invention provides the following technical solution: a device for detecting metal distance in a high temperature environment, comprising a positive feedback coil module and a resonance signal processing module, wherein the positive feedback coil module is placed in the high temperature environment, the resonance signal processing module is placed in the low temperature environment, and the positive feedback coil module is connected to the resonance signal processing module through an electrical signal;

[0006] The resonance signal processing module includes an MCU, a resistor R1, a resistor R2, a resistor R2A, a resistor R3, a resistor R4, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C6, a transistor Q1, a transistor Q2, an inductor L1, and an inductor L2. One end of the resistor R2, the resistor R2A, the resistor R3, and the capacitor C6 are all connected to the first port of the MCU, one end of the resistor R1, the inductor L1, the inductor L2, the capacitor C1, the transistor Q1, and the capacitor C2 are all connected to the third port of the MCU, and both ends of the capacitor C3 are connected to the third port of the MCU. The inductor L1 is connected to the third port and the first port of the MCU respectively, the other end of the inductor L1 is connected to the capacitor C4, the other ends of the capacitor C4 and the resistor R1 are both connected to the transistor Q2, the resistor R2 and the resistor R2A are both connected to one end of the transistor Q2, the other end of the transistor Q2 is respectively connected to the inductor L2, the capacitor C1 and the transistor Q1, one end of the transistor Q1 is connected to the inductor L2 and the capacitor C1, the other end of the transistor Q1 is connected to the capacitor C2, the resistor R3, the resistor R4 and the capacitor C6 are all connected to the transistor Q1.

[0007] Preferably, the resistor R1, the resistor R2, the resistor R2A, the inductor L1, the inductor L2, the capacitor C1, the capacitor C4 and the transistor Q2 form a high-frequency oscillation circuit.

[0008] Preferably, the resistor R2 and the resistor R2A control the oscillation level gain of the high-frequency oscillation circuit.

[0009] Preferably, the transistor Q1 and the resistor R3 form a detection circuit.

[0010] Preferably, the capacitor C3 is connected in parallel to the MCU, and one end of the capacitor C3 is grounded.

[0011] Preferably, the models of the transistor Q1 and the transistor Q2 are both 9018 SOT-23.

[0012] Preferably, the resistance value of the resistor R1 is 220 kilo-ohms, and the resistance value of the resistor R2 is 47 ohms.

[0013] Preferably, the resistance value of the resistor R3 is 2.2 kilo-ohms, and the resistance value of the resistor R3 is 10 kilo-ohms.

[0014] Preferably, the withstand voltage of the capacitor C1, the capacitor C2, the capacitor C3 and the capacitor C4 are all 50V and the withstand temperature is all 105°C.

[0015] Preferably, the rated capacitance of the capacitor C1 and the capacitor C4 is 2.22nF, the rated capacitance of the capacitor C2 is 0.1uF, and the rated capacitance of the capacitor C3 is 10uF.

[0016] Compared with the prior art, the present invention has the following beneficial effects:

[0017] The present invention separates the resonance signal processing module from the positive feedback coil module. During installation, the feedback coil detection end is placed in a high temperature environment, and the resonance signal processing module is placed in a low temperature environment, thereby realizing the function of high temperature metal object detection, which greatly facilitates the detection of high temperature metals. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a schematic diagram of the appearance of the positive feedback coil module of the present invention;

[0019] Figure 2 It is a schematic diagram of the principle of the positive feedback coil module of the present invention;

[0020] Figure 3 It is a schematic diagram of the principle of the resonance signal processing module of the present invention. DETAILED DESCRIPTION

[0021] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] See also Figure 1-3 A device for detecting metal distance in a high temperature environment includes a positive feedback coil module and a resonance signal processing module. The positive feedback coil module is placed in the high temperature environment, and the resonance signal processing module is placed in the low temperature environment. The positive feedback coil module is connected to the resonance signal processing module through an electrical signal.

[0023] See also Figure 1-3The resonance signal processing module includes an MCU, a resistor R1, a resistor R2, a resistor R2A, a resistor R3, a resistor R4, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C6, a transistor Q1, a transistor Q2, an inductor L1, and an inductor L2. One end of the resistor R2, the resistor R2A, the resistor R3, and the capacitor C6 are all connected to the first port of the MCU, one end of the resistor R1, the inductor L1, the inductor L2, the capacitor C1, the transistor Q1, and the capacitor C2 are all connected to the third port of the MCU, and the capacitor C3 The two ends are connected to the third port and the first port of the MCU respectively, the other end of the inductor L1 is connected to the capacitor C4, the other ends of the capacitor C4 and the resistor R1 are connected to the transistor Q2, the resistor R2 and the resistor R2A are connected to one end of the transistor Q2, the other end of the transistor Q2 is connected to the inductor L2, the capacitor C1 and the transistor Q1 respectively, one end of the transistor Q1 is connected to the inductor L2 and the capacitor C1, the other end of the transistor Q1 is connected to the capacitor C2, the resistor R3, the resistor R4 and the capacitor C6 are connected to the transistor Q1.

[0024] Preferably, the resistor R1, the resistor R2, the resistor R2A, the inductor L1, the inductor L2, the capacitor C1, the capacitor C4 and the transistor Q2 form a high-frequency oscillation circuit.

[0025] During specific implementation, the resistors R2 and R2A control the oscillation level gain of the high-frequency oscillation circuit.

[0026] In specific implementation, transistor Q1 and resistor R3 form a detection circuit.

[0027] During specific implementation, the capacitor C3 is connected in parallel to the MCU, and one end of the capacitor C3 is grounded.

[0028] In the specific implementation, the models of transistor Q1 and transistor Q2 are both 9018 SOT-23.

[0029] In a specific implementation, the resistance value of the resistor R1 is 220 kilo-ohms, and the resistance value of the resistor R2 is 47 ohms.

[0030] In a specific implementation, the resistance value of the resistor R3 is 2.2 kilo-ohms, and the resistance value of the resistor R3 is 10 kilo-ohms.

[0031] In a specific implementation, the withstand voltage of the capacitors C1 , C2 , C3 and C4 are all 50V, and the withstand temperature is all 105° C.

[0032] In a specific implementation, the rated capacitance of the capacitor C1 and the capacitor C4 is 2.22nF, the rated capacitance of the capacitor C2 is 0.1uF, and the rated capacitance of the capacitor C3 is 10uF.

[0033] When in use, resistor R1, resistor R2, resistor R2A, inductor element L1, inductor element L2, capacitor C1, capacitor C4 and transistor Q2 form a high-frequency oscillation circuit. Resistors R2 and R2A control the oscillation level gain of the high-frequency oscillation circuit. The resistance values ​​of resistors R2 and R2A are selected to make the oscillation circuit work in a critical oscillation state, ensuring that the circuit can oscillate when no-load when there are differences among the components. Transistor Q1 and resistor R3 form a detection circuit. When the circuit oscillates normally, when the oscillating AC voltage exceeds 0.6V, transistor Q2 will be turned on in the negative half cycle and turned off in the positive half cycle, generating a pulse waveform on resistor R3. When metal approaches the coil, eddy current will be generated in the metal, increasing the energy loss in the oscillation circuit, weakening the positive feedback, and being unable to maintain the energy required for the oscillation and stopping the oscillation. Transistor Q2 is turned off, and 0 voltage is output on resistor R3.

[0034] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A device for detecting metal distance in a high temperature environment, characterized in that: It includes a positive feedback coil module and a resonance signal processing module, wherein the positive feedback coil module is placed in a high temperature environment, the resonance signal processing module is placed in a low temperature environment, and the positive feedback coil module is connected to the resonance signal processing module through an electrical signal; The resonance signal processing module includes an MCU, a resistor R1, a resistor R2, a resistor R2A, a resistor R3, a resistor R4, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C6, a transistor Q1, a transistor Q2, an inductor L1, and an inductor L2. One end of the resistor R2, the resistor R2A, the resistor R3, and the capacitor C6 are all connected to the first port of the MCU, one end of the resistor R1, the inductor L1, the inductor L2, the capacitor C1, the transistor Q1, and the capacitor C2 are all connected to the third port of the MCU, and both ends of the capacitor C3 are connected to the third port of the MCU. The inductor L1 is connected to the third port and the first port of the MCU respectively, the other end of the inductor L1 is connected to the capacitor C4, the other ends of the capacitor C4 and the resistor R1 are both connected to the transistor Q2, the resistor R2 and the resistor R2A are both connected to one end of the transistor Q2, the other end of the transistor Q2 is respectively connected to the inductor L2, the capacitor C1 and the transistor Q1, one end of the transistor Q1 is connected to the inductor L2 and the capacitor C1, the other end of the transistor Q1 is connected to the capacitor C2, the resistor R3, the resistor R4 and the capacitor C6 are all connected to the transistor Q1.

2. The device for detecting metal distance in a high temperature environment according to claim 1, characterized in that: The resistor R1, the resistor R2, the resistor R2A, the inductor L1, the inductor L2, the capacitor C1, the capacitor C4 and the transistor Q2 form a high-frequency oscillation circuit.

3. The device for detecting metal distance in a high temperature environment according to claim 2, characterized in that: The resistor R2 and the resistor R2A control the oscillation level gain of the high-frequency oscillation circuit.

4. The device for detecting metal distance in a high temperature environment according to claim 3, characterized in that: The transistor Q1 and the resistor R3 form a detection circuit.

5. The device for detecting metal distance in a high temperature environment according to claim 4, characterized in that: The capacitor C3 is connected in parallel to the MCU, and one end of the capacitor C3 is grounded.

6. The device for detecting metal distance in a high temperature environment according to claim 5, characterized in that: The transistor Q1 and the transistor Q2 are both 9018 SOT-23 models.

7. The device for detecting metal distance in a high temperature environment according to claim 6, characterized in that: The resistance value of the resistor R1 is 220 kilo-ohms, and the resistance value of the resistor R2 is 47 ohms.

8. The device for detecting metal distance in a high temperature environment according to claim 7, characterized in that: The resistance value of the resistor R3 is 2.2 kilo-ohms, and the resistance value of the resistor R3 is 10 kilo-ohms.

9. The device for detecting metal distance in a high temperature environment according to claim 8, characterized in that: The withstand voltage of the capacitor C1, the capacitor C2, the capacitor C3 and the capacitor C4 are all 50V and the withstand temperature is all 105°C.

10. The device for detecting metal distance in a high temperature environment according to claim 9, characterized in that: The rated capacitance of the capacitor C1 and the capacitor C4 is 2.22nF, the rated capacitance of the capacitor C2 is 0.1uF, and the rated capacitance of the capacitor C3 is 10uF.

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