Substrate processing apparatus and cleaning method

Abstract

The present invention relates to a substrate processing apparatus and a cleaning method. A technique capable of selectively cleaning the interior of an ejector is provided. A substrate processing apparatus according to one aspect of the present disclosure includes: a processing container that houses a substrate; an ejector that includes a first connection port and a second connection port and has an interior that communicates with the interior of the processing container; an exhaust pipe through which the interior of the processing container is exhausted; a source gas introduction pipe that is connected to the first connection port and introduces a source gas into the ejector; a cleaning gas introduction pipe that introduces a cleaning gas into the ejector through one of the first connection port and the second connection port; and a ventilation pipe that connects the other of the first connection port and the second connection port to the exhaust pipe and exhausts the interior of the ejector.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a cleaning method. Background Art

[0002] In a semiconductor manufacturing process, for example, the following substrate processing apparatus is used: The substrate processing apparatus includes a processing container that accommodates a plurality of substrates, an injector that supplies a gas into the processing container, and a flow controller that controls the flow rate of the gas, and performs a film forming process on the plurality of substrates in batch using the ALD method. For such a substrate processing apparatus, in order to prevent particles caused by by-products or the like attached inside the injector from being introduced into the processing container, a method of providing a scavenging pipeline for scavenging inside the injector is known (for example, refer to Patent Document 1).

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2018-85393 Summary of the Invention

[0006] Problems to be Solved by the Invention

[0007] The present disclosure provides a technique capable of selectively cleaning the inside of an injector.

[0008] Solutions for Solving the Problems

[0009] A substrate processing apparatus according to one aspect of the present disclosure includes: a processing container that accommodates a substrate; an injector that includes a first connection port and a second connection port and is internally communicated with the inside of the processing container; an exhaust pipe that exhausts the inside of the processing container; a source gas introduction pipe that is connected to the first connection port and introduces a source gas into the injector; a cleaning gas introduction pipe that introduces a cleaning gas into the injector via one of the first connection port and the second connection port; and a ventilation pipe that connects the other of the first connection port and the second connection port to the exhaust pipe and exhausts the inside of the injector.

[0010] Effects of the Invention

[0011] According to the present disclosure, the inside of the injector can be selectively cleaned. Brief Description of the Drawings

[0012] Figure 1 It is a diagram showing a configuration example of the substrate processing apparatus according to the first embodiment.

[0013] Figure 2 It shows Figure 1A perspective view of an example of an ejector of a substrate processing apparatus.

[0014] Figure 3 It shows Figure 1 A flowchart showing an example of the operation of the substrate processing apparatus.

[0015] Figure 4 A flowchart showing an example of the cleaning process of the ejector.

[0016] Figure 5 A schematic diagram showing an example of the substrate processing apparatus of the second embodiment. Detailed Embodiments

[0017] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all the drawings, the same or corresponding components or parts are denoted by the same or corresponding reference numerals, and redundant descriptions are omitted.

[0018] [First Embodiment]

[0019] (Substrate Processing Apparatus)

[0020] Refer to Figure 1 and Figure 2 , the substrate processing apparatus of the first embodiment will be described. Figure 1 It is a diagram showing a configuration example of the substrate processing apparatus of the first embodiment.

[0021] The substrate processing apparatus 1 includes: a processing unit 10, a gas introduction unit 20, a gas discharge unit 30, a heating unit 40, and a control unit 90.

[0022] The processing unit 10 includes: a processing container 11, ejectors 12, 13, an exhaust port 14, and a shielding member 15.

[0023] The processing container 11 is formed to be longitudinally long and houses the susceptor WB therein. The processing container 11 has a generally cylindrical shape with a top and an open bottom. The processing container 11 may be a single-tube structure or a double-tube structure. The processing container 11 includes, for example, a reaction tube formed of a heat-resistant material such as quartz and a manifold formed of stainless steel provided at the lower end of the reaction tube.

[0024] The susceptor WB holds a plurality of semiconductor wafers (hereinafter referred to as "wafers W") in a rack shape with a predetermined interval in the vertical direction. The susceptor WB is placed on the lid CP and is lifted and lowered together with the lid CP by a lifting mechanism (not shown). The susceptor WB is fed into the processing container 11 by moving upward, and the lower opening of the processing container 11 is hermetically blocked by the lid CP. On the other hand, the susceptor WB is sent out of the processing container 11 by moving downward, and the lower opening of the processing container 11 is opened. In addition, the susceptor WB can rotate freely. In addition, in Figure 1represents the state in which the susceptor WB is taken out from the processing container 11.

[0025] The ejector 12 is provided so as to penetrate the processing container 11. The ejector 12 includes: a source gas supply pipe 121, a dilution gas supply pipe 122, a connection pipe 123, and a gas ejection hole 124.

[0026] The source gas supply pipe 121 is provided along the length direction of the processing container 11 inside the processing container 11, and the lower end of the source gas supply pipe 121 is bent in an L shape and supported so as to penetrate the processing container 11. A connection port 121a of the source gas supply pipe 121 provided outside the processing container 11 is connected to a source gas introduction pipe 21b described later. Inside the source gas supply pipe 121, a source gas, a cleaning gas, and a purge gas are introduced through the source gas introduction pipe 21b. In the source gas supply pipe 121, a plurality of gas ejection holes 124 are formed at predetermined intervals along its length direction. The gas ejection holes 124 eject the source gas, the cleaning gas, and the purge gas in the horizontal direction. Thereby, the source gas, the cleaning gas, and the purge gas are supplied substantially parallel to the main surface of the wafer W. The predetermined interval is set to be the same as the interval between the wafers W supported by the susceptor WB, for example. In addition, the position in the height direction is set such that the gas ejection holes 124 are located in the middle between the adjacent wafers W in the vertical direction. Thereby, the source gas, the cleaning gas, and the purge gas can be efficiently supplied to the space portion between the wafers W.

[0027] The dilution gas supply pipe 122 is provided along the length direction of the processing container 11 inside the processing container 11, and the lower end of the dilution gas supply pipe 122 is bent in an L shape and supported so as to penetrate the processing container 11. A connection port 122a of the dilution gas supply pipe 122 provided outside the processing container 11 is connected to a dilution gas introduction pipe 23b described later. Inside the dilution gas supply pipe 122, a dilution gas is introduced through the dilution gas introduction pipe 23b. The dilution gas supply pipe 122 supplies the dilution gas to the source gas supply pipe 121 through the connection pipe 123.

[0028] The connection pipe 123 is a tubular member that connects the upper part of the source gas supply pipe 121 and the upper part of the dilution gas supply pipe 122, and communicates the inside of the source gas supply pipe 121 with the inside of the dilution gas supply pipe 122. In the present embodiment, the source gas supply pipe 121 and the dilution gas supply pipe 122 are connected by one connection pipe 123, but the source gas supply pipe 121 and the dilution gas supply pipe 122 may also be connected by two or more connection pipes 123.

[0029] The ejector 13 is provided so as to penetrate the processing container 11. The ejector 13 includes a reaction gas supply pipe 131 and a gas ejection hole 132.

[0030] The reaction gas supply pipe 131 is disposed inside the processing container 11 along the longitudinal direction of the processing container 11, and the lower end of the reaction gas supply pipe 131 is bent in an L shape and supported so as to penetrate the processing container 11. A reaction gas introduction pipe 24b, which will be described later, is connected to a connection port 131a of the reaction gas supply pipe 131 provided outside the processing container 11. Inside the reaction gas supply pipe 131, a reaction gas and a purge gas are introduced through the reaction gas introduction pipe 24b. In the reaction gas supply pipe 131, a plurality of gas ejection holes 132 are formed at predetermined intervals along its longitudinal direction. The gas ejection holes 132 eject the reaction gas and the purge gas in the horizontal direction. Thereby, the reaction gas and the purge gas are supplied substantially parallel to the main surface of the wafer W. The predetermined interval is set, for example, to be the same as the interval between the wafers W supported by the susceptor WB. In addition, the position in the height direction is set such that the gas ejection holes 132 are located at the middle between the adjacent wafers W in the vertical direction. Thereby, the reaction gas and the purge gas can be efficiently supplied to the space portion between the wafers W.

[0031] The exhaust port 14 is provided in the side wall at the lower part of the processing container 11. The exhaust port 14 is configured to be able to exhaust the gas inside the processing container 11.

[0032] The shielding member 15 has a substantially disk shape larger than the opening at the lower end of the processing container 11. The shielding member 15 is configured to be movable in the horizontal direction between a position where the opening at the lower end of the processing container 11 is hermetically blocked and a position where the opening at the lower end of the processing container 11 is opened. The shielding member 15 hermetically blocks the opening at the lower end of the processing container 11, for example, when the susceptor WB is taken out from inside the processing container 11. In addition, in Figure 1 shows a case where the shielding member 15 is located at a position where the opening at the lower end of the processing container 11 is opened.

[0033] The gas introduction unit 20 includes: a source gas introduction unit 21, a cleaning gas introduction unit 22, a dilution gas introduction unit 23, a reaction gas introduction unit 24, a first ventilation unit 25, and a second ventilation unit 26. In addition, the gas introduction unit 20 may further include a gas introduction unit for introducing other gases.

[0034] The source gas introduction unit 21 introduces the source gas into the ejector 12 through a connection port 121a at one end of the ejector 12. The source gas introduction unit 21 includes a source gas source 21a, a source gas introduction pipe 21b, and a valve 21c.

[0035] The source gas source 21a supplies the source gas to the source gas introduction pipe 21b. The source gas source 21a may include a flow controller for controlling the flow rate of the source gas supplied to the source gas introduction pipe 21b, a storage unit (buffer tank) for temporarily storing the source gas and boosting its pressure, and the like.

[0036] One end of the source gas introduction pipe 21b is connected to the source gas supply 21a, and the other end is connected to the connection port 121a of the source gas supply pipe 121. The source gas introduction pipe 21b introduces the source gas supplied from the source gas supply 21a into the source gas supply pipe 121. The source gas is, for example, a gas used for film formation by the atomic layer deposition (ALD) method or the chemical vapor deposition (CVD) method. Examples of the source gas include silicon source gas, metal source gas, etc. The source gas is supplied into the processing container 11 heated to a temperature above the thermal decomposition temperature through the source gas supply pipe 121, for example.

[0037] A valve 21c is provided in the source gas introduction pipe 21b to open and close the fluid passage in the source gas introduction pipe 21b. In the present embodiment, one valve 21c is provided in the source gas introduction pipe 21b, but two or more valves 21c may also be provided.

[0038] The purge gas introduction section 22 introduces the purge gas into the ejector 12 through the connection port 121a at one end of the ejector 12. The purge gas introduction section 22 includes a purge gas source 22a, a purge gas introduction pipe 22b, and a valve 22c.

[0039] The purge gas source 22a supplies the purge gas and the purge gas to the purge gas introduction pipe 22b. The purge gas source 22a may also include a flow controller for controlling the flow rates of the purge gas and the purge gas supplied to the purge gas introduction pipe 22b.

[0040] One end of the purge gas introduction pipe 22b is connected to the purge gas source 22a, and the other end is connected to the source gas introduction pipe 21b. The purge gas introduction pipe 22b introduces the purge gas and the purge gas supplied from the purge gas source 22a into the source gas supply pipe 121 through the source gas introduction pipe 21b. The purge gas is a gas used to remove deposits accumulated in the processing container 11, the ejector 12, etc., and is selected according to the type of the source gas. Examples of the purge gas include gases containing halogens such as fluorine, chlorine, and bromine. The purge gas is a gas used to displace the gas remaining in the processing container 11, the ejector 12, etc. Examples of the purge gas include inert gases such as nitrogen (N2) and argon (Ar).

[0041] A valve 22c is provided in the purge gas introduction pipe 22b to open and close the fluid passage in the purge gas introduction pipe 22b. In the present embodiment, one valve 22c is provided in the purge gas introduction pipe 22b, but two or more valves 22c may also be provided.

[0042] The dilution gas introduction section 23 introduces dilution gas into the ejector 12 through the connection port 122a at the other end of the ejector 12. The dilution gas introduction section 23 includes a dilution gas source 23a, a dilution gas introduction pipe 23b, and a valve 23c.

[0043] The dilution gas source 23a supplies dilution gas to the dilution gas introduction pipe 23b. The dilution gas source 23a may also include a flow controller or the like that controls the flow rate of the dilution gas supplied to the dilution gas introduction pipe 23b.

[0044] One end of the dilution gas introduction pipe 23b is connected to the dilution gas source 23a, and the other end is connected to the connection port 122a of the dilution gas supply pipe 122. The dilution gas introduction pipe 23b introduces the dilution gas supplied from the dilution gas source 23a into the dilution gas supply pipe 122. The dilution gas is a gas used to dilute the raw material gas. Examples of the dilution gas include inert gases such as N2 gas and Ar gas, and hydrogen gas (H2).

[0045] The valve 23c is provided in the dilution gas introduction pipe 23b to open and close the passage of the fluid in the dilution gas introduction pipe 23b. In the present embodiment, one valve 23c is provided in the dilution gas introduction pipe 23b, but two or more valves 23c may be provided.

[0046] The reaction gas introduction section 24 includes a reaction gas source 24a, a reaction gas introduction pipe 24b, and a valve 24c.

[0047] The reaction gas source 24a supplies reaction gas and purge gas to the reaction gas introduction pipe 24b. The reaction gas source 24a may also include a flow controller or the like that controls the flow rates of the reaction gas and the purge gas supplied to the reaction gas introduction pipe 24b.

[0048] One end of the reaction gas introduction pipe 24b is connected to the reaction gas source 24a, and the other end is connected to the connection port 131a of the reaction gas supply pipe 131. The reaction gas introduction pipe 24b introduces the reaction gas and the purge gas supplied from the reaction gas source 24a into the ejector 13. The reaction gas is a gas that reacts with the raw material gas to oxidize, nitride, etc. the raw material. Examples of the reaction gas include oxidation gas, nitride gas, etc. Examples of the purge gas include inert gases such as N2 gas and Ar gas.

[0049] The valve 24c is provided in the reaction gas introduction pipe 24b to open and close the passage of the fluid in the reaction gas introduction pipe 24b. In the present embodiment, one valve 24c is provided in the reaction gas introduction pipe 24b, but two or more valves 24c may be provided.

[0050] The first ventilation section 25 includes a ventilation pipe 25b and a valve 25c. The ventilation pipe 25b connects the raw material gas introduction pipe 21b and the exhaust pipe 31 described later. The valve 25c is provided in the ventilation pipe 25b to control the connection state between the raw material gas introduction pipe 21b and the exhaust pipe 31. That is, when the valve 25c is opened, the raw material gas introduction pipe 21b is connected to the exhaust pipe 31, and when the valve 25c is closed, the connection between the raw material gas introduction pipe 21b and the exhaust pipe 31 is blocked. In the present embodiment, one valve 25c is provided in the ventilation pipe 25b, but two or more valves 25c may be provided.

[0051] The second ventilation section 26 includes a ventilation pipe 26b and a valve 26c. The ventilation pipe 26b connects the dilution gas introduction pipe 23b and the exhaust pipe 31 described later. The valve 26c is provided in the ventilation pipe 26b to control the connection state between the dilution gas introduction pipe 23b and the exhaust pipe 31. That is, when the valve 26c is opened, the dilution gas introduction pipe 23b is connected to the exhaust pipe 31, and when the valve 26c is closed, the connection between the dilution gas introduction pipe 23b and the exhaust pipe 31 is blocked. In the present embodiment, one valve 26c is provided in the ventilation pipe 26b, but two or more valves 26c may be provided.

[0052] The gas discharge section 30 includes an exhaust pipe 31, a pressure regulating valve 32, and a vacuum pump 33. One end of the exhaust pipe 31 is connected to the exhaust port 14, and the other end is connected to the vacuum pump 33. The pressure regulating valve 32 is provided in the exhaust pipe 31 to adjust the pressure in the processing container 11 by adjusting the conductance of the exhaust pipe 31. The vacuum pump 33 evacuates the inside of the processing container 11 through the exhaust pipe 31. The vacuum pump 33 includes, for example, a mechanical booster pump and a dry pump.

[0053] The heating section 40 has a substantially cylindrical shape and is arranged to cover the processing container 11 around the processing container 11. The heating section 40 includes, for example, a heating element and a heat insulating body, and heats the wafer W accommodated in the processing container 11 by the heat generation of the heating element.

[0054] The control section 90 controls the operation of the entire substrate processing apparatus 1. The control section 90 may be, for example, a computer. In addition, the program of the computer that performs the operation of the entire substrate processing apparatus 1 is stored in a storage medium (not shown). The storage medium may be, for example, a floppy disk, an optical disk, a hard disk, a flash memory, a DVD, or the like.

[0055] (Operation of the substrate processing apparatus)

[0056] Refer to Figure 3 , and an example of the operation of the substrate processing apparatus 1 will be described. Figure 3 It is a Figure 1 flowchart showing an example of the operation of the substrate processing apparatus 1. In addition, in the initial state, the pressure regulating valve 32 and the valves 21c to 26c of the substrate processing apparatus 1 are set to be closed.

[0057] First, the control unit 90 controls the operations of the respective parts of the substrate processing apparatus 1 and executes a film forming process (step S1). In the present embodiment, the control unit 90 controls the elevating mechanism to feed the boat WB holding a plurality of wafers W into the processing container 11. Next, the control unit 90 controls the pressure adjustment valve 32 to adjust the inside of the processing container 11 to a predetermined pressure, and controls the heating unit 40 to heat the wafer W to a predetermined temperature. Next, by controlling the opening and closing of the valves 21c, 23c, and 24c by the control unit 90, a raw material gas, a dilution gas, and a reaction gas are supplied into the processing container 11, and a predetermined film is formed on the wafer W. Next, the control unit 90 returns the inside of the processing container 11 to the atmospheric pressure and controls the elevating mechanism to send out the boat WB from the processing container 11.

[0058] Next, the control unit 90 determines whether cleaning of the ejector 12 is required (step S2). In the present embodiment, the control unit 90 determines that cleaning of the ejector 12 is required when the execution time of the film forming process exceeds a predetermined time, and determines that cleaning of the ejector 12 is not required when the execution time of the film forming process does not exceed the predetermined time. When it is determined that cleaning of the ejector 12 is not required, the control unit 90 returns the process to step S1. That is, the control unit 90 continues the film forming process without performing the cleaning process of the ejector 12. On the other hand, when it is determined that cleaning of the ejector 12 is required, the control unit 90 performs the cleaning process of the ejector 12 (step S3) and ends the process.

[0059] Refer to Figure 4 , and an example of the cleaning process (cleaning method) of the ejector 12 will be described. Figure 4 is a flowchart showing an example of the cleaning process of the ejector 12.

[0060] First, the control unit 90 decompresses the inside of the processing container 11 (step S31). In the present embodiment, the control unit 90 controls the shielding member 15 to hermetically block the opening at the lower end of the processing container 11 using the shielding member 15. Next, the control unit 90 opens the pressure adjustment valve 32 to connect the inside of the processing container 11 to the vacuum pump 33 through the exhaust pipe 31, and exhausts the inside of the processing container 11 to decompress it. After the inside of the processing container 11 reaches a predetermined degree of vacuum, the control unit 90 closes the pressure adjustment valve 32.

[0061] Next, the control unit 90 decompresses the inside of the ejector 12 (step S32). In the present embodiment, the control unit 90 opens the valve 26c to connect the inside of the dilution gas supply pipe 122 of the ejector 12 to the vacuum pump 33 through the communication pipe 26b, and exhausts the inside of the dilution gas supply pipe 122 to decompress it.

[0062] Next, the control unit 90 introduces a cleaning gas into the ejector 12 (step S33). In the present embodiment, the control unit 90 introduces the cleaning gas from the cleaning gas source 22a into the raw material gas supply pipe 121 by opening the valve 22c. At this time, the pressure in the dilution gas supply pipe 122 is reduced. Therefore, the proportion of the cleaning gas ejected into the processing container 11 through the gas ejection holes 124 becomes smaller, and the proportion of the cleaning gas flowing through the dilution gas supply pipe 122 and the ventilation pipe 26b and discharged by the vacuum pump 33 becomes larger. That is, the cleaning gas introduced into the raw material gas supply pipe 121 selectively flows through the dilution gas supply pipe 122 and the ventilation pipe 26b. As a result, the inside of the ejector 12 can be selectively cleaned. In addition, in step S33, the control unit 90 preferably opens the valve 24c to supply a purge gas from the ejector 13 into the processing container 11. Thus, even when the cleaning gas is ejected into the processing container 11 through the gas ejection holes 124 of the ejector 12, since the processing container 11 is also filled with the purge gas, it is possible to suppress the cleaning of the inside of the processing container 11 using the cleaning gas. Further, the control unit 90 closes the valve 22c after a predetermined time to stop introducing the cleaning gas into the raw material gas supply pipe 121. The predetermined time can be, for example, the time required to completely remove the deposits in the raw material gas supply pipe 121 and the dilution gas supply pipe 122.

[0063] Next, the control unit 90 displaces the inside of the ejector 12 with the purge gas (step S34). In the present embodiment, the control unit 90 introduces the purge gas into the raw material gas supply pipe 121 by opening the valve 22c. At this time, the pressure in the dilution gas supply pipe 122 is reduced. Therefore, the proportion of the purge gas ejected into the processing container 11 through the gas ejection holes 124 becomes smaller, and the proportion of the purge gas flowing through the dilution gas supply pipe 122 and the ventilation pipe 26b and discharged by the vacuum pump 33 becomes larger. That is, the purge gas introduced into the raw material gas supply pipe 121 selectively flows through the dilution gas supply pipe 122 and the ventilation pipe 26b. Thereby, the cleaning residues in the raw material gas supply pipe 121 and the dilution gas supply pipe 122 can be efficiently discharged by the vacuum pump 33. Further, the control unit 90 closes the valve 22c after a predetermined time to stop introducing the purge gas into the raw material gas supply pipe 121. In addition, the control unit 90 closes the valve 26c to end the process.

[0064] As described above, in the substrate processing apparatus 1 according to the first embodiment, a raw material gas introduction pipe 21b and a cleaning gas introduction pipe 22b are connected to one end of the injector 12, and a ventilation pipe 26b is connected to the other end. Thus, the raw material gas and the cleaning gas can be introduced from the connection port 121a at one end of the injector 12, and the gas inside the injector 12 can be discharged from the connection port 122a at the other end of the injector 12. Therefore, the inside of the injector 12 can be selectively cleaned for the inside of the processing container 11.

[0065] In addition, the substrate processing apparatus 1 according to the first embodiment includes a shielding member 15 that airtightly blocks the opening at the lower end of the processing container 11 when the susceptor WB is sent out from the inside of the processing container 11. Thus, during the period when the susceptor WB holding the wafer W after the film formation process is sent out from the inside of the processing container 11 and cooled (temperature reduction), the inside of the injector 12 can be cleaned. Therefore, the wafer cooling time can be effectively utilized to improve the productivity.

[0066] [Second Embodiment]

[0067] (Substrate Processing Apparatus)

[0068] Refer to Figure 5 and the substrate processing apparatus according to the second embodiment will be described. Figure 5 FIG. is a diagram showing a configuration example of the substrate processing apparatus according to the second embodiment.

[0069] The substrate processing apparatus 1A according to the second embodiment is different from the substrate processing apparatus 1 according to the first embodiment in that the cleaning gas introduction unit 22 introduces the cleaning gas into the injector 12 through the connection port 122a at the other end of the injector 12. Hereinafter, the description will focus on the differences from the substrate processing apparatus 1 according to the first embodiment.

[0070] The substrate processing apparatus 1A includes: a processing unit 10, a gas introduction unit 20A, a gas discharge unit 30, a heating unit 40, and a control unit 90.

[0071] The gas introduction unit 20A includes: a raw material gas introduction unit 21, a cleaning gas introduction unit 22, a dilution gas introduction unit 23, a reaction gas introduction unit 24, a first ventilation unit 25, a second ventilation unit 26, and a purge gas introduction unit 27. In addition, the gas introduction unit 20A may further include a gas introduction unit for introducing other gases.

[0072] The cleaning gas introduction unit 22 introduces the cleaning gas into the injector 12 through the connection port 122a at the other end of the injector 12. The cleaning gas introduction unit 22 includes a cleaning gas source 22a, a cleaning gas introduction pipe 22b, and a valve 22c.

[0073] The cleaning gas source 22a supplies cleaning gas and purge gas to the cleaning gas introduction pipe 22b. The cleaning gas source 22a may also include a flow controller or the like for controlling the flow rates of the cleaning gas and the purge gas supplied to the cleaning gas introduction pipe 22b.

[0074] One end of the cleaning gas introduction pipe 22b is connected to the cleaning gas source 22a, and the other end is connected to the connection port 122a of the dilution gas supply pipe 122. The cleaning gas introduction pipe 22b introduces the cleaning gas and the purge gas supplied from the cleaning gas source 22a into the dilution gas supply pipe 122.

[0075] A valve 22c is provided in the cleaning gas introduction pipe 22b to open and close the passage of the fluid in the cleaning gas introduction pipe 22b. In the present embodiment, one valve 22c is provided in the cleaning gas introduction pipe 22b, but two or more valves 22c may be provided.

[0076] The dilution gas introduction part 23 introduces dilution gas into the ejector 12 through the connection port 122a at the other end of the ejector 12. The dilution gas introduction part 23 includes a dilution gas source 23a, a dilution gas introduction pipe 23b, and a valve 23c.

[0077] The dilution gas source 23a supplies dilution gas to the dilution gas introduction pipe 23b. The dilution gas source 23a may also include a flow controller or the like for controlling the flow rate of the dilution gas supplied to the dilution gas introduction pipe 23b.

[0078] One end of the dilution gas introduction pipe 23b is connected to the dilution gas source 23a, and the other end is connected to the cleaning gas introduction pipe 22b. The dilution gas introduction pipe 23b introduces the dilution gas supplied from the dilution gas source 23a into the dilution gas supply pipe 122 through the cleaning gas introduction pipe 22b.

[0079] A valve 23c is provided in the dilution gas introduction pipe 23b to open and close the passage of the fluid in the dilution gas introduction pipe 23b. In the present embodiment, one valve 23c is provided in the dilution gas introduction pipe 23b, but two or more valves 23c may be provided.

[0080] The purge gas introduction part 27 introduces purge gas into the ejector 12 through the connection port 121a at one end of the ejector 12. The purge gas introduction part 27 includes a purge gas source 27a, a purge gas introduction pipe 27b, and a valve 27c.

[0081] The purge gas source 27a supplies purge gas to the purge gas introduction pipe 27b. The purge gas source 27a may also include a flow controller or the like for controlling the flow rate of the purge gas supplied to the purge gas introduction pipe 27b.

[0082] One end of the purge gas introduction pipe 27b is connected to the purge gas source 27a, and the other end is connected to the raw material gas introduction pipe 21b. The purge gas introduction pipe 27b introduces the purge gas supplied from the purge gas source 27a into the raw material gas supply pipe 121 through the raw material gas introduction pipe 21b. The purge gas is used to displace the gases remaining in the processing container 11, the ejector 12, etc. Examples of the purge gas include inert gases such as N2 gas and Ar gas.

[0083] A valve 27c is provided in the purge gas introduction pipe 27b to open and close the fluid passage in the purge gas introduction pipe 27b. In the present embodiment, one valve 27c is provided in the purge gas introduction pipe 27b, but two or more valves 27c may be provided.

[0084] (Operation of the substrate processing apparatus)

[0085] Refer to Figure 3 , an example of the operation of the substrate processing apparatus 1A will be described. In addition, in the initial state, the pressure adjustment valve 32 and the valves 21c to 27c of the substrate processing apparatus 1A are set to closed.

[0086] First, the control unit 90 controls the operations of the respective parts of the substrate processing apparatus 1A and executes a film formation process (step S1). In the present embodiment, the control unit 90 controls the lifting mechanism to send the susceptor WB holding a plurality of wafers W into the processing container 11. Next, the control unit 90 controls the pressure adjustment valve 32 to adjust the pressure inside the processing container 11 to a predetermined pressure, and controls the heating unit 40 to heat the wafer W to a predetermined temperature. Next, by controlling the opening and closing of the valves 21c, 23c, 24c, and 27c by the control unit 90, a raw material gas, a dilution gas, a reaction gas, and a purge gas are supplied into the processing container 11, and a predetermined film is formed on the wafer W. Next, the control unit 90 returns the pressure inside the processing container 11 to atmospheric pressure, and controls the lifting mechanism to send the susceptor WB out of the processing container 11.

[0087] Next, the control unit 90 determines whether the ejector 12 needs to be cleaned (step S2). In the present embodiment, the control unit 90 determines that the ejector 12 needs to be cleaned when the execution time of the film formation process exceeds a predetermined time, and determines that the ejector 12 does not need to be cleaned when the execution time of the film formation process does not exceed the predetermined time. When it is determined that the ejector 12 does not need to be cleaned, the control unit 90 returns the process to step S1. That is, the control unit 90 continues the film formation process without performing the cleaning process of the ejector 12. On the other hand, when it is determined that the ejector 12 needs to be cleaned, the control unit 90 executes the cleaning process of the ejector 12 (step S3) and ends the process.

[0088] Refer to Figure 4, an example of the cleaning process of the ejector 12 will be described.

[0089] First, the control unit 90 decompresses the inside of the processing container 11 (step S31). In the present embodiment, the control unit 90 controls the shielding member 15 to airtightly block the opening at the lower end of the processing container 11 by using the shielding member 15. Next, the control unit 90 opens the pressure adjustment valve 32 to communicate the inside of the processing container 11 with the vacuum pump 33 through the exhaust pipe 31, and exhausts the inside of the processing container 11 to decompress it. After the inside of the processing container 11 reaches a predetermined vacuum degree, the control unit 90 closes the pressure adjustment valve 32.

[0090] Next, the control unit 90 decompresses the inside of the ejector 12 (step S32). In the present embodiment, the control unit 90 opens the valve 25c to communicate the inside of the raw material gas supply pipe 121 of the ejector 12 with the vacuum pump 33 through the ventilation pipe 25b, and exhausts the inside of the raw material gas supply pipe 121 to decompress it.

[0091] Next, the control unit 90 introduces a cleaning gas into the ejector 12 (step S33). In the present embodiment, the control unit 90 introduces a cleaning gas from the cleaning gas source 22a into the dilution gas supply pipe 122 by opening the valve 22c. At this time, the inside of the raw material gas supply pipe 121 is decompressed. Therefore, the proportion of the cleaning gas ejected into the processing container 11 through the gas ejection holes 124 becomes smaller, and the proportion of the cleaning gas flowing through the raw material gas supply pipe 121 and the ventilation pipe 25b and discharged by the vacuum pump 33 becomes larger. That is, the cleaning gas introduced into the dilution gas supply pipe 122 selectively flows through the raw material gas supply pipe 121 and the ventilation pipe 25b. As a result, the inside of the ejector 12 can be selectively cleaned. In addition, in step S33, the control unit 90 preferably opens the valve 24c to supply a purge gas from the ejector 13 into the processing container 11. Thus, even when the cleaning gas is ejected into the processing container 11 through the gas ejection holes 124 of the ejector 12, since the purge gas is also filled in the processing container 11, the situation of cleaning the inside of the processing container 11 with the cleaning gas can be suppressed. Further, the control unit 90 closes the valve 22c after a predetermined time to stop introducing the cleaning gas into the dilution gas supply pipe 122. The predetermined time can be, for example, the time required to completely remove the deposits in the raw material gas supply pipe 121 and the dilution gas supply pipe 122.

[0092] Next, the control unit 90 displaces the inside of the ejector 12 with purge gas (step S34). In the present embodiment, the control unit 90 introduces purge gas into the dilution gas supply pipe 122 by opening the valve 22c. At this time, the inside of the raw material gas supply pipe 121 is depressurized. Therefore, the proportion of the purge gas ejected into the processing container 11 through the gas ejection holes 124 becomes smaller, and the proportion of the purge gas flowing through the raw material gas supply pipe 121 and the ventilation pipe 25b and discharged by the vacuum pump 33 becomes larger. That is, the purge gas introduced into the dilution gas supply pipe 122 selectively flows through the raw material gas supply pipe 121 and the ventilation pipe 25b. Thereby, the cleaning residues in the raw material gas supply pipe 121 and the dilution gas supply pipe 122 can be efficiently discharged by the vacuum pump 33. In addition, the control unit 90 closes the valve 22c after a predetermined time, thereby stopping the introduction of purge gas into the raw material gas supply pipe 121. Further, the control unit 90 closes the valve 25c to end the process.

[0093] In addition, in the above-described embodiment, the connection port 121a is an example of the first connection port, and the connection port 122a is an example of the second connection port. Further, the raw material gas supply pipe 121 is an example of the first gas pipe, and the dilution gas supply pipe 122 is an example of the second gas pipe. Further, the valve 22c is an example of the first valve, the valves 25c and 26c are examples of the second valves, and the pressure regulating valve 32 is an example of the third valve. Further, the wafer W is an example of the substrate.

[0094] As described above, according to the substrate processing apparatus 1A of the second embodiment, the raw material gas introduction pipe 21b and the ventilation pipe 25b are connected to one end of the ejector 12, and the cleaning gas introduction pipe 22b is connected to the other end. Thereby, the cleaning gas can be introduced from the connection port 122a at the other end of the ejector 12, and the gas inside the ejector 12 can be discharged from the connection port 121a at the other end of the ejector 12. Therefore, the inside of the ejector 12 can be selectively cleaned for the inside of the processing container 11.

[0095] In addition, according to the substrate processing apparatus 1A of the second embodiment, the shielding member 15 that airtightly blocks the opening at the lower end of the processing container 11 is provided when the susceptor WB is sent out from the inside of the processing container 11. Thereby, during the period when the susceptor WB holding the wafer W after the film formation process is sent out from the inside of the processing container 11 and cooled (temperature drop), the inside of the ejector 12 can be cleaned. Therefore, the wafer cooling time can be effectively utilized to improve the productivity.

[0096] It should be considered that the embodiments disclosed this time are illustrative in all aspects and not restrictive. The above-described embodiments can be omitted, replaced, and changed in various ways without departing from the claims and their gist.

Claims

1. A substrate processing apparatus, wherein, the substrate processing apparatus includes: a processing container that houses a substrate; an injector that includes a first connection port and a second connection port and is internally communicated with the inside of the processing container; an exhaust pipe for exhausting the inside of the processing container; a source gas introduction pipe connected to the first connection port for introducing source gas into the injector; a cleaning gas introduction pipe for introducing cleaning gas into the injector via the second connection port; and a ventilation pipe connecting the first connection port and the exhaust pipe for exhausting the inside of the injector.

2. The substrate processing apparatus according to claim 1, wherein, the injector includes a plurality of gas ejection holes communicated with the inside of the processing container.

3. The substrate processing apparatus according to claim 1 or 2, wherein, the substrate processing apparatus is configured to introduce a dilution gas into the cleaning gas introduction pipe.

4. The substrate processing apparatus according to claim 1 or 2, wherein, the processing container has a substantially cylindrical shape that is longitudinally long, the injector includes: a first gas pipe that includes the first connection port, the first gas pipe is disposed inside the processing container along the length direction of the processing container, and has a plurality of gas ejection holes formed along the length direction; a second gas pipe that includes the second connection port, the second gas pipe is disposed inside the processing container along the length direction of the processing container; and a connection pipe that communicates the inside of the first gas pipe with the inside of the second gas pipe.

5. The substrate processing apparatus according to claim 4, wherein, the substrate processing apparatus further includes: a first valve disposed in the cleaning gas introduction pipe; a second valve disposed in the ventilation pipe; and a control unit that controls the opening and closing of the first valve and the second valve, the control unit is configured to control the first valve and the second valve such that the first valve is opened after the second valve is opened when cleaning gas is introduced into the injector.

6. The substrate processing apparatus according to claim 5, wherein, the substrate processing apparatus further includes a third valve disposed in the exhaust pipe, the control unit is configured to control the first valve, the second valve, and the third valve such that the first valve and the second valve are opened in a state where the third valve is closed.

7. A cleaning method for a substrate processing apparatus according to any one of claims 1 to 6, which is a method for cleaning the inside of an injector that supplies source gas into a processing container, wherein, the cleaning method sequentially performs the following steps: exhausting the inside of the injector from one end of the injector without introducing cleaning gas into the injector; and introducing cleaning gas into the injector from the other end of the injector while exhausting the inside of the injector from the one end.

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