Display panel and method for manufacturing the same

Abstract

The present application relates to a display panel and a method for manufacturing the same, the display panel comprising: a first substrate, comprising a plurality of pixel regions and a plurality of non-pixel regions; a plurality of light-emitting devices located on the pixel regions and arranged in a predetermined direction; a screening portion located in the non-pixel regions and penetrating the first substrate; in a first state, the screening portion allows the light-emitting devices located in the non-pixel regions to pass through the first substrate. The display panel can recycle light-emitting devices that cannot be used for display during the manufacturing process, thereby reducing material costs.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a method for preparing the same. Background Art

[0002] With the continuous development of display technology, placing quantum dots (QD) on nano-LEDs (QNED for short) by inkjet printing to enhance color reproduction has become a new focus of the future market. In order for QNED to emit light normally, it is necessary to align the QNED under the action of an electric field, and then deposit a driving electrode on the QNED. In view of the randomness of the QNED arrangement, after the QNED is aligned, a part of the QNED in the electric field is arranged normally between pixels. However, there will still be some QNEDs that are affected by the electric field and cannot be used for display, resulting in a waste of materials. Summary of the invention

[0003] The purpose of the present application is to provide a display panel and a method for preparing the same, wherein the display panel can recycle light-emitting devices that cannot be used for display during the manufacturing process, thereby reducing material costs.

[0004] On the one hand, an embodiment of the present application proposes a display panel, comprising: a first substrate, comprising a plurality of pixel areas and a plurality of non-pixel areas; light-emitting devices located on the pixel areas and arranged in a predetermined direction; a screening portion located in the non-pixel areas and passing through the first substrate; in a first state, the screening portion allows the light-emitting devices located in the non-pixel areas to pass through the first substrate.

[0005] On the other hand, an embodiment of the present application also provides a method for preparing a display panel, including: providing a first substrate, the first substrate including a plurality of pixel areas and a plurality of non-pixel areas; forming a screening portion penetrating the first substrate in the non-pixel area; forming a plurality of light-emitting devices on the first substrate; arranging the light-emitting devices located in the pixel area in a predetermined direction; in a first state, passing the light-emitting devices located in the non-pixel area through the first substrate through the screening portion.

[0006] A display panel and a preparation method thereof provided in an embodiment of the present application, by setting a screening portion penetrating the first substrate in the non-pixel area of ​​the first substrate, the light-emitting devices located in the non-pixel area can be recycled through the first substrate, while the light-emitting devices located in the pixel area can be arranged in a predetermined direction and used for display, so that the light-emitting devices that cannot be used for display can be recycled during the production process of the display panel, thereby reducing material costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The features, advantages and technical effects of the exemplary embodiments of the present application will be described below with reference to the accompanying drawings, which are not drawn to scale.

[0008] Figure 1A schematic diagram showing the distribution structure of a light emitting device of a display panel in the related art;

[0009] Figure 2 A schematic diagram showing a top view of the structure of a display panel in a first state according to an embodiment of the present application is shown;

[0010] Figure 3 Show Figure 2 Schematic diagram of the cross-sectional structure along the BB direction;

[0011] Figure 4 Show Figure 2 A schematic diagram of the structure of the light emitting device;

[0012] Figure 5 A schematic diagram showing a size comparison between a screening portion of a display panel and a light-emitting device in a first state according to an embodiment of the present application;

[0013] Figure 6 A schematic diagram showing a size comparison between a screening portion of a display panel and a light-emitting device in a first state according to an embodiment of the present application;

[0014] Figure 7 Show Figure 2 The schematic diagram of the top view of the display panel in the second state is shown;

[0015] Figure 8 Show Figure 7 Schematic diagram of the cross-sectional structure along the CC direction;

[0016] Fig. 9 A schematic diagram showing a cross-sectional structure of a display panel along the BB direction according to another embodiment of the present application;

[0017] Fig.10 A schematic diagram showing a cross-sectional structure of a display panel along the BB direction according to another embodiment of the present application;

[0018] Fig.11 A flowchart of a method for manufacturing a display panel according to an embodiment of the present application is shown. DETAILED DESCRIPTION

[0019] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In the detailed description below, many specific details are proposed to provide a comprehensive understanding of the present application. However, it is obvious to those skilled in the art that the present application can be implemented without the need for some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by illustrating examples of the present application. In the accompanying drawings and the following description, at least some of the known structures and technologies are not shown to avoid unnecessary ambiguity in the present application; and, for clarity, the size of some structures may be exaggerated. In addition, the features, structures or characteristics described below may be combined in one or more embodiments in any suitable manner.

[0020] It should be noted that, in this document, relational terms such as third and second are merely used to distinguish one entity or operation from another entity or operation, but do not necessarily require or imply any actual relationship or order between these entities or operations.

[0021] It should be understood that when describing the structure of a component, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean that it is directly on the other layer or another region, or that other layers or regions are included between it and the other layer or another region. Moreover, if the component is turned over, the layer or a region will be "below" or "beneath" another layer or another region.

[0022] With the continuous development of nano-LED technology, the research on using QNED as a light-emitting element of display devices has gradually deepened. In order for QNED to emit light normally, QNED and the driving electrode should be properly in contact with each other. To this end, QNED needs to be precisely aligned under the action of an electric field.

[0023] Figure 1 A schematic diagram showing the distribution structure of a light emitting device of a display panel of the related art is shown. Figure 1 As shown, the display panel includes a first substrate 1 and a plurality of light emitting devices 2 located on the first substrate 1, the light emitting devices 2 are QNEDs. The display panel also includes a plurality of alignment electrode groups 4, each alignment electrode group 4 includes a first alignment electrode 41 and a second alignment electrode 42 that are oppositely and spaced apart.

[0024] The inventors have found that due to the random arrangement of QNEDs, after the alignment is completed, the QNEDs between the first alignment electrode 41 and the second alignment electrode 42 will be arranged in a predetermined direction to form pixels for display, and then the drive electrodes will be deposited on top of these effective QNEDs. If the adjacent alignment electrodes between the pixels are different signals, then during the alignment, the non-display QNEDs between the pixels will also be affected by the electric field and gathered in the non-display area; if the adjacent alignment electrodes between the pixels are the same signal, the number of non-display QNEDs will be reduced, but if the area of ​​the non-display area is large, there will still be a large number of QNEDs that cannot be used for display and cannot be recycled, resulting in a waste of materials.

[0025] In response to the above problems, an embodiment of the present application provides a display panel, which can recycle the light-emitting devices QNED that cannot be used for display during the production process of the display panel, thereby reducing material costs.

[0026] Figure 2 FIG. 1 is a schematic diagram showing a top view of a display panel in a first state according to an embodiment of the present application. Figure 3 Show Figure 2 Schematic diagram of the cross-sectional structure along direction BB.

[0027] like Figure 2 and Figure 3 As shown, a display panel provided in an embodiment of the present application includes a first substrate 1, a light-emitting device 2 and a screening unit 10.

[0028] The first substrate 1 includes a plurality of pixel areas AA and a plurality of non-pixel areas NA, the light emitting devices 2 are located on the pixel areas AA and arranged in a predetermined direction, and the screening portion 10 is located in the non-pixel area NA and passes through the first substrate 1. In the first state, the screening portion 10 allows the light emitting devices 2 located in the non-pixel area NA to pass through the first substrate 1.

[0029] Optionally, the light emitting device 2 is a nanometer or micrometer-sized light emitting device. In this embodiment, the light emitting device 2 is a quantum dot nano light emitting diode (referred to as "QNED" in this article).

[0030] like Figure 2 As shown, the display panel includes a plurality of pixels PX1, PX2, PX3 ... PXj, where j is a natural number greater than 3. A plurality of pixels PXj are arranged in a matrix form on a first substrate 1 of the display panel. Each pixel PXj includes at least one light emitting device 2, and the light emitting device 2 may be a QNED. In this case, at least two of all the pixels may include a different number of QNEDs. For example, if one pixel includes "a" number of QNEDs, another pixel may include "b" number of QNEDs, where a and b are natural numbers different from each other.

[0031] In some embodiments, the plurality of pixels PXj include a red pixel for displaying red, a green pixel for displaying green, and a blue pixel for displaying blue. Figure 2 As shown, the first pixel PX1, the second pixel PX2, and the third pixel PX3 adjacent to each other in the X-axis direction may respectively include light emitting devices 2 that emit light of different colors. For example, the light emitting device 2 of the first pixel PX1 may be a red light emitting device 2 that emits red light, the light emitting device 2 of the second pixel PX2 may be a green light emitting device 2 that emits green light, and the light emitting device 2 of the third pixel PX3 may be a blue light emitting device 2 that emits blue light.

[0032] like Figure 3 As shown, the first substrate 1 includes a substrate 11 , a buffer layer 12 , a device layer 13 and a planarization layer 14 .

[0033] In the present application, the substrate 11 may be any one of a glass substrate, a quartz substrate, a sapphire substrate, a plastic substrate, and a bendable flexible polymer film.

[0034] The buffer layer 12 is located on the substrate 11. In an embodiment, the buffer layer 12 overlaps the entire surface of the substrate 11. The buffer layer 12 is used to prevent impurity ions from diffusing on the upper surface of the substrate 11, prevent moisture or external air from penetrating, and flatten the surface. The buffer layer 12 may include an inorganic material such as any one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, titanium oxide, and titanium nitride, an organic material such as any one of polyimide, polyester, and acrylic, or a stacked structure thereof. In some embodiments, the buffer layer 12 may be omitted.

[0035] The device layer 13 is located on the side of the buffer layer 12 away from the substrate 11, and the device layer 13 includes a pixel circuit and a capacitor storage. In this article, the circuit structure of the pixel circuit can be any one of a 2T1C circuit, a 7T1C circuit, a 7T2C circuit, or a 9T1C circuit. Among them, the "2T1C circuit" refers to a pixel circuit including two thin film transistors and one capacitor in the pixel circuit, and other "7T1C circuits", "7T2C circuits", "9T1C circuits", etc. are deduced in this way.

[0036] The device layer 13 specifically includes an active layer C, a gate electrode GE, a capacitor metal layer Cst, a source electrode SE, a drain electrode DE, a first gate insulating layer 131 , a second gate insulating layer 132 and an insulating intermediate layer 133 .

[0037] The active layer C is located on the buffer layer 12. The active layer C may include an inorganic semiconductor such as amorphous silicon or polycrystalline silicon or an organic semiconductor. In an exemplary embodiment, the active layer C may include an oxide semiconductor. For example, the oxide semiconductor may include an oxide based on a metal element of group 12, group 13, or group 14, such as zinc (Zn), indium (In), gallium (Ga), tin (Sn), cadmium (Cd), germanium (Ge), and hafnium (Hf), or a combination of at least two of them.

[0038] The first gate insulating layer 131 is located on the active layer C and the buffer layer 12. In an implementation, the first gate insulating layer 131 overlaps the entire surface of the substrate 11. The first gate insulating layer 131 may include an inorganic layer including an inorganic material such as any one of silicon oxide, silicon nitride, and metal oxide.

[0039] The gate electrode GE and the power line VSL are located on the first gate insulating layer 131. In an embodiment, the gate electrode GE is located on the first gate insulating layer 131 to overlap with the channel region of the active layer C. Although not shown, the gate electrode GE is connected to the scan line. The gate electrode GE and the power line VSL may include a material such as any one of Au, Ag, Cu, Ni, Pt, Pd, Al, Mo, Cr, Al:Nd, and Mo:W.

[0040] The second gate insulating layer 132 is on the gate electrode GE, the power line VSL, and the first gate insulating layer 131. In an implementation, the second gate insulating layer 132 overlaps the entire surface of the substrate 11. The second gate insulating layer 132 may include substantially the same material as that included in the first gate insulating layer 131.

[0041] The storage capacitor Cst is located on the second gate insulating layer 132 to overlap the gate electrode GE.

[0042] The insulating interlayer 133 is located on the storage capacitor Cst and the second gate insulating layer 132. In an embodiment, the insulating interlayer 133 overlaps the entire surface of the substrate 11.

[0043] The insulating interlayer 133 may include an inorganic layer including an inorganic material such as silicon oxide or silicon nitride. In exemplary embodiments, the insulating interlayer 133 may include an organic layer.

[0044] The source electrode SE is located on the insulating interlayer 133. The source electrode SE is connected to the source region of the active layer C via a contact hole defined by the insulating interlayer 133, the second gate insulating layer 132, and the first gate insulating layer 131. Although not shown, the source electrode SE is connected to the data line. The source electrode SE may include a metal, a metal alloy, a metal nitride, a conductive metal oxide, a transparent conductive material, etc.

[0045] The drain electrode DE is connected to the drain region of the active layer C via a contact hole defined by the insulating interlayer 133, the second gate insulating layer 132, and the first gate insulating layer 131. Although not shown, the drain electrode DE is connected to the gate electrode GE via a contact hole defined by the insulating interlayer 133 and the second gate insulating layer 132.

[0046] The planarization layer 14 is located on the source electrode SE, the drain electrode DE and the insulating interlayer 133. The planarization layer 14 can be used to eliminate the height difference between the layers and planarize the layers below it to improve the light-emitting efficiency of the light-emitting device 2. The planarization layer 14 may include a single layer or a multilayer structure, and the single layer or the multilayer structure includes an inorganic material, an organic material or an organic / inorganic composite. In an embodiment, the planarization layer 14 may include at least one of the following: polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin and benzocyclobutene (BCB).

[0047] Further, the first substrate 1 further comprises an insulating layer. The insulating layer is located on the side of the planarization layer 14 away from the substrate 11. A plurality of light emitting devices 2 are located on the insulating layer. Optionally, the screening portion 10 penetrates a plurality of film layers between the substrate 11 and the insulating layer located in the non-pixel area NA.

[0048] In the embodiment of the present application, a plurality of light-emitting devices 2 dispersed in a solution are generally sprayed onto the first substrate 1 by an inkjet method, and then the light-emitting devices 2 located in the pixel area AA are aligned under the action of an electric field. The "first state" refers to that in the process of preparing the display panel, after the light-emitting devices 2 located in the pixel area AA are aligned, the light-emitting devices 2 located in the non-pixel area NA are in a disorderly state. At this time, the screening unit 10 provided in the non-pixel area NA can screen out the light-emitting devices 2 located in the non-pixel area NA from the substrate 11 side of the first substrate 1. In this way, the light-emitting devices 2 that cannot be used for display in the non-pixel area NA can be recycled to reduce material waste.

[0049] A display panel provided in an embodiment of the present application, by setting a screening portion 10 penetrating the first substrate 1 in the non-pixel area NA of the first substrate 1, the light-emitting devices 2 located in the non-pixel area NA can be recycled through the first substrate 1, while the light-emitting devices 2 located in the pixel area AA can be arranged in a predetermined direction and used for display, so that the light-emitting devices 2 that cannot be used for display can be recycled during the manufacturing process of the display panel, thereby reducing material costs.

[0050] The specific structure of the display panel provided in the embodiments of the present application is further described in detail below with reference to the accompanying drawings.

[0051] Figure 4 Show Figure 2 Schematic diagram of the structure of the light-emitting device.

[0052] like Figure 2 As shown, the screening portion 10 is a hollow through groove, so that the light emitting device 2 located in the non-pixel area NA passes through the through groove in the first state.

[0053] like Figure 4 As shown, the light emitting device 2 may have a cylindrical shape. Alternatively, the light emitting device 2 may also have a quadrilateral parallelepiped shape or any one of various other shapes.

[0054] The light emitting device 2 may include a first electrode 21, a second electrode 22, a first semiconductor layer 23, a second semiconductor layer 24, and an active layer 25. In an exemplary embodiment, the light emitting device 2 may further include an insulating layer 26 in addition to the components 21, 22, 23, 24, and 25 described above. In an embodiment, at least one of the first electrode 21 and the second electrode 22 may be omitted.

[0055] The first semiconductor layer 23 is located between the first electrode 21 and the active layer 25. The active layer 25 is located between the first semiconductor layer 23 and the second semiconductor layer 24. The second semiconductor layer 24 is located between the active layer 25 and the second electrode 22.

[0056] In an embodiment, the insulating layer 26 may have a ring shape surrounding a portion of the first electrode 21, a portion of the second electrode 22, the first semiconductor layer 23, the active layer 25, and the second semiconductor layer 24. As another example, the insulating layer 26 may have a ring shape surrounding only the active layer 25. The insulating layer 26 may prevent a decrease in light emission efficiency of the light emitting device 2 by protecting the outer surface including the active layer 25.

[0057] In an embodiment, the first electrode 21, the first semiconductor layer 23, the active layer 25, the second semiconductor layer 24, and the second electrode 22 are sequentially stacked along the longitudinal direction of the light emitting device 2. As used herein, the length of the light emitting device 2 means the size in the X-axis direction. For example, the length L of the light emitting device 2 may be in the range of about 2 μm to about 5 μm.

[0058] In an implementation, the first electrode 21 and the second electrode 22 may be ohmic contact electrodes, however, the first electrode 21 and the second electrode 22 are not limited thereto and may be Schottky contact electrodes.

[0059] The first electrode 21 and the second electrode 22 may include a conductive metal. For example, the first electrode 21 and the second electrode 22 may include one or more metal materials of aluminum, titanium, indium, gold, and silver. In an embodiment, the first electrode 21 and the second electrode 22 may include indium tin oxide (ITO) or indium zinc oxide (IZO). In an embodiment, the first electrode 21 and the second electrode 22 may include substantially the same material. Alternatively, the first electrode 21 and the second electrode 22 may include materials different from each other.

[0060] The first semiconductor layer 23 may include, for example, an N-type semiconductor layer. For example, when the light emitting device 2 is a blue QNED, the N-type semiconductor layer may include a semiconductor material having a composition formula of InxAlyGa1-x-yN (wherein 0≤x≤1, 0≤y≤1 and 0≤x+y≤1), such as one or more of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, etc. The N-type semiconductor material may be doped with a first conductive dopant (e.g., Si, Ge, Sn, etc.). A QNED having a different color other than the above-mentioned blue may include another type of III-V semiconductor material as an N-type semiconductor layer.

[0061] The second semiconductor layer 24 may include, for example, a P-type semiconductor layer. For example, when the QNED is a blue LED, the P-type semiconductor layer may include a semiconductor material having a composition formula of InxAlyGa1-x-yN (wherein 0≤x≤1, 0≤y≤1 and 0≤x+y≤1), such as one or more of InAlGaN, GaN, AlGaN, InGaN, AlN, InN, etc. The P-type semiconductor material may be doped with a second conductive dopant (e.g., Mg).

[0062] In an embodiment, the active layer 25 may have a single quantum well or a multiple quantum well structure. For example, a capping layer (not shown) doped with a conductive dopant may be disposed on at least one of the upper side and the lower side of the active layer 25. The capping layer (i.e., the capping layer including the conductive dopant) may be an AlGaN layer or an InAlGaN layer. In addition, materials such as AlGaN and AlInGaN may be used as the active layer 25. When an electric field is applied to the active layer 25, light is generated by coupling of electron-hole pairs. The position of the active layer 25 may be changed differently depending on the type of QNED. The active layer 25 of a QNED having a color other than the above-mentioned blue may include another type of III-V semiconductor material.

[0063] In an exemplary embodiment, the light emitting device 2 may further include at least one of a phosphor layer, an active layer, a semiconductor layer, and an electrode above or below the first semiconductor layer 23 and the second semiconductor layer 24 .

[0064] Figure 5 Schematic diagram of the size comparison between the screening part of the display panel according to an embodiment of the present application and the light-emitting device in the first state.

[0065] In some embodiments, the display panel is a flexible display panel, that is, the first substrate 1 or the non-pixel area NA is made of stretchable material, and the elongation rate of the first substrate 1 or the non-pixel area NA is S%.

[0066] The light-emitting device 2 has a columnar structure, and its length dimension L1 is greater than its width dimension or radial dimension. In the first state, the first substrate 1 is in a stretched state, and the maximum inner diameter dimension of the through groove before stretching is L2, then L2 < L1 < L2×(1 + S%). Thus, the light-emitting device 2 located in the non-pixel area NA can be screened out from the first substrate 1 through the screening part 10 with an increased size in the first state. There are many shapes of the through groove, and the stretching direction can be determined according to different through groove hollow patterns.

[0067] Optionally, the cross-sectional shape of the through groove along the first direction is a cross shape or a polygonal shape, and the first direction is parallel to the plane where the display panel is located.

[0068] As Figure 5 shown, the through groove is in a cross shape before stretching, and its maximum inner diameter dimension L2 is smaller than the length dimension L1 of the light-emitting device 2. After stretching, the through groove is in a diamond shape, and its maximum inner diameter dimension L2×(1 + S%) is greater than the length dimension L1 of the light-emitting device 2. With such a setting of the shape of the through groove, stretching the display panel in any direction, such as horizontally, vertically or obliquely, can ensure that the light-emitting device 2 located in the display area NA can pass through the through groove.

[0069] In addition, after the light-emitting device 2 located in the pixel area AA is aligned, the flexible display panel can be stretched multiple times to verify whether the vast majority of the light-emitting devices 2 located in the non-pixel area NA can be recycled through the screening part 10, or the shape of the through groove can be fine-tuned according to the stretching result to maximize the recovery rate of the light-emitting device 2 with the least number of stretching times.

[0070] Figure 6 Schematic diagram of the size comparison between the screening part of the display panel according to another embodiment of the present application and the light-emitting device in the first state.

[0071] In some embodiments, the display panel is a non-flexible display panel, the light-emitting device 2 has a columnar structure, its length dimension L1 is greater than its width dimension or radial dimension, and the minimum inner diameter dimension of the through groove in the first state is L3, then L3 > L1.

[0072] Optionally, the cross-sectional shape of the through groove along the first direction is a cross shape or a polygonal shape, and the first direction is parallel to the plane where the display panel is located. As Figure 6As shown, the through groove is in a rhombus shape, and its maximum inner diameter L3 is larger than the length L1 of the light emitting device 2, so as to ensure that the light emitting device 2 located in the display area NA can pass through the through groove.

[0073] In addition, after the light-emitting devices 2 located in the pixel area AA are aligned, the non-flexible display panel can be vibrated multiple times to verify whether the vast majority of the light-emitting devices 2 located in the non-pixel area NA can be recycled through the screening part 10, and the shape of the through groove can be fine-tuned according to the vibration results to maximize the recovery rate of the light-emitting devices 2 with the least number of vibrations.

[0074] Figure 7 Show Figure 2 The schematic diagram of the top view of the display panel in the second state is shown, Figure 8 Show Figure 7 Schematic diagram of the cross-sectional structure along the CC direction.

[0075] In some embodiments, Figure 7 and Figure 8 As shown, the display panel also includes a functional layer 3 located on the non-pixel area NA of the first substrate 1, and the functional layer 3 is used to fill the screening part 10 in the second state. The "second state" refers to the state in which, in the process of preparing the display panel, after the light-emitting device 2 located in the non-pixel area NA is screened out from the substrate 11 side of the first substrate 1 through the screening part 10, the screening part 10 is in a closed state or the size of the screening part 10 is changed and the light-emitting device 2 is not allowed to pass through the first substrate 1. At this time, the functional layer 3 can be filled into the screening part 10 by inkjet printing. On the one hand, the functional layer 3 can prevent impurities such as external water vapor from invading from the screening part 10 and affecting the electrical performance of the display panel; on the other hand, the functional layer 3 can ensure the flatness of each film layer of the first substrate 1 before depositing other film layers above the light-emitting device 2.

[0076] For flexible display panels, such as Figure 8 As shown, in the first state, the display panel is stretched, the size of the screening portion 10 becomes larger, and all or most of the light-emitting devices 2 located in the non-pixel area NA are allowed to pass through the enlarged screening portion 10. In the second state, the display panel is not stretched or is restored from the stretched state to the unstretched state, the size of the screening portion 10 becomes smaller, and the light-emitting device 2 cannot pass through the screening portion 10, and the functional layer 3 can be filled into the screening portion 10 by inkjet printing.

[0077] It should be noted that in order to distinguish the screening portion 10 from the functional layer 3, Figure 8 The size of the middle screening part 10 is exaggerated. In the actual product, the functional layer 3 completely fills and seals the screening part 10 and is connected to other membrane layers around the screening part 10 as a whole.

[0078] For a non-flexible display panel, the size of the screening portion 10 remains unchanged. In the first state, the minimum inner diameter L3 of the screening portion 10 is greater than the length L2 of the light-emitting device 2, allowing all or most of the light-emitting devices 2 located in the non-pixel area NA to pass through the screening portion 10. In the second state, the functional layer 3 can be filled into the screening portion 10 by inkjet printing.

[0079] Functional layer 3 can be an organic material or an inorganic material, or a combination of organic and inorganic materials. Inorganic materials can include one or more of the following materials: Al2O3, TiO2, ZrO2, MgO, HFO2, Ta2O5, Si3N4, AlN, SiN, SiNO, SiO, SiO2, SiC, SiCNx, ITO, IZO. Organic materials can be organic acid-doped polyaniline, cross-linking monomer, toluene and other resins; or, conductive molecules such as polyaniline are added to the above resins; or, conductive ions are added to the above resins, such as nano-scale antimony-doped SiO2, and nano-scale conductive ions such as nano-scale indium tin oxide or nano-silver can also be used. Inorganic materials have good water and oxygen barrier properties, and organic materials can not only inhibit the cracking of inorganic films, release the stress between inorganic substances, but also improve the flexibility of functional layer 3.

[0080] In some embodiments, the pixel area AA further includes an alignment electrode group 4, and the screening unit 10 is located between two adjacent alignment electrode groups 4. The alignment electrode group 4 includes a first alignment electrode 41 and a second alignment electrode 42 that are oppositely and spaced apart, and a plurality of light-emitting devices 2 located on the pixel area AA are arranged between the first alignment electrode 41 and the second alignment electrode 42 in a predetermined direction.

[0081] In one example, if Figure 3 As shown, the first alignment electrode 41 includes a first alignment electrode 411 and a first driving electrode 412 which are electrically connected to each other, and the second alignment electrode 42 includes a second alignment electrode 421 and a second driving electrode 422 which are electrically connected to each other. The first driving electrode 412 and the second driving electrode 422 are located in the same layer, the first alignment electrode 411 and the second alignment electrode 421 are located in the same layer, and the first driving electrode 412 and the second driving electrode 422 are located above the first alignment electrode 411 and the second alignment electrode 421. The light emitting device 2 is located between the first driving electrode 412 and the second driving electrode 422, and is arranged in a predetermined direction between the first alignment electrode 411 and the second alignment electrode 421.

[0082] like Figure 2 and Figure 3As shown, the display panel further includes an alignment line 43, and the first alignment electrode 411, the second alignment electrode 421 and the alignment line 43 are located on the planarization layer 14. The first alignment electrode 411 is connected to the alignment line 43. For example, the first alignment electrode 411 and the alignment line 43 may be integrally formed.

[0083] like Figure 2 As shown in , the first alignment electrode 411 extends along the Y-axis direction, and the alignment line 43 extends along the X-axis direction. In an embodiment, the alignment line 43 has a non-continuous line shape. For example, the alignment line 43 may include a plurality of separation electrodes 431 separated from each other. Each of the separation electrodes 431 is connected to the first alignment electrode 411 of each of the pixels PX1, PX2, and PX3. As a more specific example, as shown in Figure 3 As shown in FIG. 4 , three partition electrodes 431 are respectively connected to corresponding first alignment electrodes 411 of the first pixel PX1 , the second pixel PX2 , and the third pixel PX3 .

[0084] The second alignment electrode 421 is connected to the power line VSL via a contact hole defined by the planarization layer 14 , the insulating interlayer 133 , and the second gate insulating layer 132 .

[0085] In an implementation, the first alignment electrode 411 may include a metal having a relatively high reflectivity. For example, the first alignment electrode 411 may include aluminum or an aluminum alloy. The second alignment electrode 421 may include a material substantially the same as that included in the first alignment electrode 411 .

[0086] The insulating layer is located on the first alignment electrode 411 , the second alignment electrode 421 and the planarization layer 14 . In an embodiment, the insulating layer may include a plurality of insulating layers, for example, the insulating layer includes a first insulating layer 15 and a second insulating layer 16 .

[0087] The first insulating layer 15 is located on the first alignment electrode 411, the second alignment electrode 421, and the planarization layer 14. In an embodiment, the first insulating layer 15 is located between the planarization layer 14 and the second insulating layer 16, between the first alignment electrode 411 and the second insulating layer 16, and between the second alignment electrode 421 and the second insulating layer 16. In an embodiment, the first insulating layer 15 may include a material substantially the same as a material included in the first gate insulating layer 131 or the insulating interlayer 133.

[0088] The second insulating layer 16 is located on the first insulating layer 15. In an implementation, the second insulating layer 15 may include a material substantially the same as a material included in the first insulating layer 15.

[0089] The first driving electrode 412 and the second driving electrode 422 are located on the second insulating layer 15. The first driving electrode 421 may be located on the second insulating layer 15 to overlap the first alignment electrode 411, and the second driving electrode 422 may be located on the second insulating layer 16 to overlap the second alignment electrode 421. The first driving electrode 412 and the second driving electrode 422 face each other in the X-axis direction.

[0090] Further, the light emitting device 2 is formed in the region (e.g., pixel area AA) between the first driving electrode 412 and the second driving electrode 422. For example, the light emitting device 2 can be disposed on the first substrate 1 by an inkjet printing method, and most of the light emitting devices 2 located in the pixel area AA are arranged in a non-aligned state. In other words, when the axis parallel to the longitudinal direction of the light emitting device 2 is referred to as the axis of the light emitting device 2, the axis of the light emitting device 2 is not parallel to the X-axis. Next, a first alignment signal is applied to the alignment line 43, and a second alignment signal is applied to the power line VSL. The first alignment signal applied to the alignment line 43 is applied to each first alignment electrode 411.

[0091] The second alignment signal may be, for example, a driving voltage, which is a DC voltage. In an embodiment, the first alignment signal is an AC signal having a high voltage and a low voltage alternately, wherein the high voltage is higher than the second alignment signal, and the low voltage is lower than the second alignment signal. For example, the high voltage is higher than the second driving voltage VSS, and the low voltage is lower than the second driving voltage VSS.

[0092] An electric field is generated between the first alignment electrode 411 and the second alignment electrode 421 in a direction parallel to the X-axis by a first alignment signal applied to the first alignment electrode 411 and a second alignment signal applied to the second alignment electrode 421, and the light emitting devices 2 are aligned in one direction by the electric field. For example, the light emitting devices 2 may be aligned so that their axes are parallel to the X-axis, such as Figure 2 as shown in .

[0093] In some embodiments, the display panel further includes a first contact electrode 61 and a second contact electrode 62 , wherein the first contact electrode 61 is electrically connected to the first alignment electrode 41 and the first electrode 21 of the light-emitting device 2 , and the second contact electrode 62 is electrically connected to the second alignment electrode 42 and the second electrode 22 of the light-emitting device 2 .

[0094] The first contact electrode 61 is located on the first electrode 21 of the light emitting device 2, the first driving electrode 412 and the second insulating layer 16. The second contact electrode 62 is located on the second electrode 22 of the light emitting device 2, the second driving electrode 422 and the second insulating layer 16.

[0095] In an embodiment, the first contact electrode 61 and the second contact electrode 62 may include one or more metal materials selected from the group consisting of aluminum, titanium, indium, gold, and silver, or one or more transparent materials selected from the group consisting of indium tin oxide (ITO), ZnO:Al, and CNT-conductive polymer composite. When the first contact electrode 61 and the second contact electrode 62 include two or more materials, the first contact electrode 61 and the second contact electrode 62 according to the exemplary embodiment may have a structure in which the two or more materials are stacked.

[0096] In an exemplary embodiment, the first contact electrode 61 and the second contact electrode 62 may be formed in a state where the first alignment signal and the second alignment signal are applied.

[0097] Fig. 9 A schematic diagram of the cross-sectional structure of a display panel along the BB direction according to another embodiment of the present application is shown.

[0098] like Fig. 9 As shown, the display panel provided by the embodiment of the present application is Figure 2 to Figure 8 The structure of the display panel shown is similar, except that, for the flexible display panel, it also includes a pair of protrusions 5 located in the pixel area AA, and the pair of protrusions 5 includes a first protrusion 51 and a second protrusion 52 that are relatively and spaced apart. The first protrusion 51 is arranged corresponding to the first alignment electrode 41, and the second protrusion 52 pair 5 should be arranged corresponding to the second alignment electrode 42.

[0099] In one example, the first driving electrode 412 covers the first protrusion 51 , and the second driving electrode 422 covers the second protrusion 52 .

[0100] Optionally, each pixel area AA is provided with at least one protrusion pair 5, and a plurality of protrusion pairs 5 are arranged in an array on the first substrate 1. Figure 8 As shown, the first protrusion 51 and the second protrusion 52 are located on the side of the second insulating layer 16 away from the substrate 11, so that the first protrusion 51 is located between the first alignment electrode 411 and the first driving electrode 412, and the second protrusion 52 is located between the second alignment electrode 421 and the second driving electrode 422, so that the light-emitting device 2 can be confined between the first protrusion 51 and the second protrusion 52, thereby reducing the deformation degree of the pixel area AA when the display panel is stretched, preventing the light-emitting device 2 located in the pixel area AA from being affected by the stretching and changing the alignment direction, or the light-emitting device 2 located in the pixel area AA from being bounced into the non-pixel area NA due to the stretching.

[0101] In addition, the shapes of the first protrusion 51 and the second protrusion 52 can be circular, elliptical, polygonal, etc., and their sizes are determined according to simulation analysis or experiments to reduce the degree of deformation of the pixel area AA under the stretching state.

[0102] Fig.10 A schematic diagram of the cross-sectional structure of a display panel along the BB direction according to another embodiment of the present application is shown.

[0103] like Fig.10 As shown, the display panel provided by the embodiment of the present application is Fig. 9 The structure of the display panel shown is similar, except that the first alignment electrode of the first alignment electrode 41 is shared by the first driving electrode, the second alignment electrode of the second alignment electrode 42 is shared by the second driving electrode, and the first alignment electrode 41 covers the first protrusion 51 and the second alignment electrode 42 covers the second protrusion 52.

[0104] Optionally, each pixel area AA is provided with at least one protrusion pair 5, and a plurality of protrusion pairs 5 are arranged in an array on the first substrate 1. Fig. 9 As shown, the first protrusion 51 and the second protrusion 52 are located on the side of the planarization layer 14 away from the substrate 11, and the first alignment electrode 41 covers the first protrusion 51, and the second alignment electrode 42 covers the second protrusion 52, so that the light-emitting device 2 can be confined between the first protrusion 51 and the second protrusion 52, reducing the deformation degree of the pixel area AA when the display panel is stretched, preventing the light-emitting device 2 located in the pixel area AA from being affected by the stretching and changing the alignment direction, or the light-emitting device 2 located in the pixel area AA from being bounced into the non-pixel area NA due to the stretching.

[0105] In addition, due to the semi-enclosed nature of the first protrusion 51 and the second protrusion 52, the electric field is distributed in the height direction to form a three-dimensional electric field. Figure 2 to Figure 8 For the two-dimensional electric field shown, alignment can be better achieved.

[0106] Fig.11 A flowchart of a method for manufacturing a display panel according to an embodiment of the present application is shown.

[0107] See also Fig.11 The present application also provides a method for manufacturing a display panel, comprising the following steps S1 to S5. Figure 2 to Figure 9 The specific steps of the method for preparing the display panel are described in detail.

[0108] Step S1: providing a first substrate 1, wherein the first substrate 1 includes a plurality of pixel areas AA and a plurality of non-pixel areas NA. In one example, the first substrate 1 includes a substrate 11, a buffer layer 12, a device layer 13, a planarization layer 14 and an insulating layer.

[0109] Step S2: forming a screening portion 10 penetrating the first substrate 1 in the non-pixel area NA. In one example, the screening portion 10 is a hollow through groove. Optionally, the cross-sectional shape of the through groove along the first direction is a cross or a polygon, and the first direction is parallel to the plane where the display panel is located.

[0110] Step S3: Form a plurality of light-emitting devices 2 on the first substrate 1.

[0111] Step S4: Arrange the light-emitting devices 2 located in the pixel region AA in a predetermined direction.

[0112] Step S5: In the first state, pass the light-emitting devices 2 located in the non-pixel region NA through the first substrate 1 via the screening portion 10.

[0113] The "first state" means that during the process of manufacturing the display panel, after the light-emitting devices 2 in the pixel region AA are aligned, the light-emitting devices 2 in the non-pixel region NA are in a disordered state. At this time, the screening portion 10 provided in the non-pixel region NA can screen out the light-emitting devices 2 in the non-pixel region NA from the side of the substrate 11 of the first substrate 1. Thus, the light-emitting devices 2 that cannot be used for display in the non-pixel region NA can be recycled, reducing material waste.

[0114] A method for manufacturing a display panel provided by an embodiment of the present application can recycle the light-emitting devices 2 located in the non-pixel region NA by passing them through the first substrate 1 by providing a screening portion 10 that penetrates the first substrate 1 in the non-pixel region NA of the first substrate 1, while the light-emitting devices 2 in the pixel region AA can be arranged in a predetermined direction and used for display, so that the light-emitting devices 2 that cannot be used for display can be recycled during the manufacturing process of the display panel, reducing material costs.

[0115] In some embodiments, the display panel is a flexible display panel, that is, the first substrate 1 or the non-pixel region NA is made of a stretchable material, and the elongation rate of the first substrate 1 or the non-pixel region NA is S%.

[0116] The light-emitting device 2 has a columnar structure, and its length dimension L1 is greater than its width dimension or radial dimension. In the first state, the first substrate 1 is in a stretched state. The maximum inner diameter dimension of the through groove before stretching is L2, then L2 < L1 < L2×(1 + S%). Thus, the light-emitting devices 2 in the non-pixel region NA can be screened out from the first substrate 1 via the screening portion 10 with an increased size in the first state. There are many shapes of the through groove, and the stretching direction can be determined according to different through groove hollow patterns.

[0117] Optionally, the cross-sectional shape of the through groove along the first direction is a cross shape or a polygonal shape, and the first direction is parallel to the plane where the display panel is located.

[0118] Such as Figure 5As shown, the through groove is cross-shaped before stretching, and its maximum inner diameter L2 is smaller than the length L1 of the light emitting device 2. After stretching, the through groove is rhombus-shaped, and its maximum inner diameter L2×(1+S%) is larger than the length L1 of the light emitting device 2. The shape of the through groove is set in this way, and the through groove can be stretched in any direction, horizontally, vertically or obliquely, and the display panel can ensure that the light emitting device 2 located in the display area NA can pass through the through groove.

[0119] In addition, after the light-emitting devices 2 located in the pixel area AA are aligned, the flexible display panel can be stretched multiple times to verify whether the vast majority of the light-emitting devices 2 located in the non-pixel area NA can be recycled through the screening part 10. The shape of the through groove can also be fine-tuned according to the stretching result to maximize the recovery rate of the light-emitting devices 2 with the least number of stretching times.

[0120] In some embodiments, the display panel is a non-flexible display panel, the light emitting device 2 is a columnar structure, the length dimension L1 thereof is greater than the width dimension or the radial dimension thereof, the minimum inner diameter dimension of the through slot in the first state is L3, and L3>L1.

[0121] Optionally, the cross-sectional shape of the through groove along the first direction is a cross or a polygon, and the first direction is parallel to the plane where the display panel is located. Figure 6 As shown, the through groove is in a rhombus shape, and its maximum inner diameter L3 is larger than the length L1 of the light emitting device 2, so as to ensure that the light emitting device 2 located in the display area NA can pass through the through groove.

[0122] In addition, after the light-emitting devices 2 located in the pixel area AA are aligned, the non-flexible display panel can be vibrated multiple times to verify whether the vast majority of the light-emitting devices 2 located in the non-pixel area NA can be recycled through the screening part 10, and the shape of the through groove can be fine-tuned according to the vibration results to maximize the recovery rate of the light-emitting devices 2 with the least number of vibrations.

[0123] Furthermore, after step S5, that is, after the light emitting device 2 located in the non-pixel area NA passes through the first substrate 1 through the screening unit 10, the method for preparing the display panel further includes:

[0124] Step S6: In the second state, a functional layer 3 is formed on the non-pixel area NA of the first substrate 1 to fill the screening part 10. The display panel further includes a functional layer 3 on the non-pixel area NA of the first substrate 1, and the functional layer 3 is used to fill the screening part 10 in the second state.

[0125] The "second state" refers to the state in which, in the process of preparing the display panel, after the light-emitting device 2 located in the non-pixel area NA is screened out from the substrate 11 side of the first substrate 1 through the screening part 10, the screening part 10 is in a closed state or the size of the screening part 10 is changed so as not to allow the light-emitting device 2 to pass through the first substrate 1. At this time, the functional layer 3 can be filled into the screening part 10 by inkjet printing. On the one hand, the functional layer 3 can prevent impurities such as external water vapor from invading from the screening part 10 and affecting the electrical performance of the display panel; on the other hand, the functional layer 3 can ensure the flatness of each film layer of the first substrate 1 before depositing other film layers above the light-emitting device 2.

[0126] For the flexible display panel, in the first state, the display panel is stretched, the size of the screening portion 10 becomes larger, and all or most of the light-emitting devices 2 located in the non-pixel area NA are allowed to pass through the enlarged screening portion 10. In the second state, the display panel is not stretched or is restored from the stretched state to the unstretched state, the size of the screening portion 10 becomes smaller, and the light-emitting device 2 cannot pass through the screening portion 10, and the functional layer 3 can be filled into the screening portion 10 by inkjet printing.

[0127] For a non-flexible display panel, the size of the screening portion 10 remains unchanged. In the first state, the minimum inner diameter L3 of the screening portion 10 is greater than the length L2 of the light-emitting device 2, allowing all or most of the light-emitting devices 2 located in the non-pixel area NA to pass through the screening portion 10. In the second state, the functional layer 3 can be filled into the screening portion 10 by inkjet printing.

[0128] Functional layer 3 can be an organic material or an inorganic material, or a combination of organic and inorganic materials. Inorganic materials can include one or more of the following materials: Al2O3, TiO2, ZrO2, MgO, HFO2, Ta2O5, Si3N4, AlN, SiN, SiNO, SiO, SiO2, SiC, SiCNx, ITO, IZO. Organic materials can be organic acid-doped polyaniline, cross-linking monomer, toluene and other resins; or, conductive molecules such as polyaniline are added to the above resins; or, conductive ions are added to the above resins, such as nano-scale antimony-doped SiO2, and nano-scale conductive ions such as nano-scale indium tin oxide or nano-silver can also be used. Inorganic materials have good water and oxygen barrier properties, and organic materials can not only inhibit the cracking of inorganic films, release the stress between inorganic substances, but also improve the flexibility of functional layer 3.

[0129] Furthermore, in step S4, the light emitting devices 2 located in the pixel area AA are arranged in a predetermined direction, including:

[0130] Step S41: forming an alignment electrode group 4 in the pixel area AA of the first substrate 1, wherein the screening unit 10 is located between two adjacent alignment electrode groups 4, and the alignment electrode group 4 includes a first alignment electrode 41 and a second alignment electrode 42 that are oppositely and spaced apart;

[0131] Step S42: forming a light emitting device 2 between the first alignment electrode 41 and the second alignment electrode 42;

[0132] Step S43: applying a first alignment signal to the first alignment electrode 41 and applying a second alignment signal to the second alignment electrode 42, so that the light-emitting devices 2 located between the first alignment electrode 41 and the second alignment electrode 42 are arranged in a predetermined direction.

[0133] In some embodiments, before step S41, that is, before forming the alignment electrode group 4 in the pixel area AA of the first substrate 1, the following steps are also included:

[0134] Step S40: forming a protrusion pair 5 in the pixel area AA of the first substrate 1 , the protrusion pair 5 comprising a first protrusion 51 and a second protrusion 52 that are oppositely and spaced apart, wherein the first alignment electrode 41 is arranged corresponding to the first protrusion 51 , and the second alignment electrode 42 is arranged corresponding to the second protrusion 52 .

[0135] In some embodiments, the flexible display panel further includes a protrusion pair 5 located in the pixel area AA, the protrusion pair 5 includes a first protrusion 51 and a second protrusion 52 that are oppositely and spaced apart, the first protrusion 51 is arranged corresponding to the first alignment electrode 41, and the second protrusion 52 is arranged corresponding to the second alignment electrode 42. Optionally, each pixel area AA is provided with at least one protrusion pair 5, and a plurality of protrusion pairs 5 are arranged in an array on the first substrate 1.

[0136] In one example, the first driving electrode 412 covers the first protrusion 51 , and the second driving electrode 422 covers the second protrusion 52 .

[0137] like Fig. 9 As shown, the first protrusion 51 and the second protrusion 52 are located on the side of the second insulating layer 16 away from the substrate 11, so that the first protrusion 51 is located between the first alignment electrode 411 and the first driving electrode 412, and the second protrusion 52 is located between the second alignment electrode 421 and the second driving electrode 422, so that the light-emitting device 2 can be confined between the first protrusion 51 and the second protrusion 52, thereby reducing the deformation degree of the pixel area AA when the display panel is stretched, preventing the light-emitting device 2 located in the pixel area AA from being affected by the stretching and changing the alignment direction, or the light-emitting device 2 located in the pixel area AA from being bounced into the non-pixel area NA due to the stretching.

[0138] In addition, the shapes of the first protrusion 51 and the second protrusion 52 can be circular, elliptical, polygonal, etc., and their sizes are determined according to simulation analysis or experiments to reduce the degree of deformation of the pixel area AA under the stretching state.

[0139] In another example, the first alignment electrode of the first alignment electrode 41 is shared with the first driving electrode, the second alignment electrode of the second alignment electrode 42 is shared with the second driving electrode, and the first alignment electrode 41 covers the first protrusion 51 , and the second alignment electrode 42 covers the second protrusion 52 .

[0140] like Fig.10 As shown, the first protrusion 51 and the second protrusion 52 are located on the side of the planarization layer 14 away from the substrate 11, and the first alignment electrode 41 covers the first protrusion 51, and the second alignment electrode 42 covers the second protrusion 52, so that the light-emitting device 2 can be confined between the first protrusion 51 and the second protrusion 52, reducing the deformation degree of the pixel area AA when the display panel is stretched, preventing the light-emitting device 2 located in the pixel area AA from being affected by the stretching and changing the alignment direction, or the light-emitting device 2 located in the pixel area AA from being bounced into the non-pixel area NA due to the stretching.

[0141] In addition, due to the semi-enclosed nature of the first protrusion 51 and the second protrusion 52, the electric field is distributed in the height direction between the alignment electrode group 4 and the device layer 2 to form a three-dimensional electric field. Figure 2 to Figure 9 For the two-dimensional electric field shown, alignment can be better achieved.

[0142] In one example, in step S3, forming a plurality of light-emitting devices 2 on the first substrate 1 specifically includes:

[0143] Step S31: loading a plurality of light emitting devices 2 in a dispersion medium into a printer;

[0144] Step S32 : placing the first substrate 1 in a low-viscosity solvent, and printing a plurality of light-emitting devices 2 on the first substrate 1 .

[0145] In one example, the dispersant on the light emitting device 2 is decomposed into a plurality of dispersant fragments by light irradiation;

[0146] The low viscosity solvent and multiple dispersant fragments are removed by thermal treatment.

[0147] Furthermore, after step S4, after arranging the light emitting devices 2 located in the pixel area AA in a predetermined direction, the method for preparing the display panel further includes:

[0148] Step S44: decomposing the dispersant on the light emitting device 2 into a plurality of dispersant fragments by light irradiation;

[0149] Step S45: removing the low-viscosity solvent and the plurality of dispersant fragments by heat treatment.

[0150] Furthermore, the method for preparing the display panel further includes:

[0151] Step S7: depositing the first contact electrode 61 and the second contact electrode 62 on the first alignment electrode 41 and the second alignment electrode 42 respectively, so that the first contact electrode 61 is electrically connected to the first electrode of the light-emitting element and the first alignment electrode 41, and the second contact electrode 62 is electrically connected to the second electrode of the light-emitting element and the second alignment electrode 42.

[0152] In an embodiment, the first contact electrode 61 and the second contact electrode 62 may include one or more metal materials selected from the group consisting of aluminum, titanium, indium, gold, and silver, or one or more transparent materials selected from the group consisting of indium tin oxide (ITO), ZnO:Al, and CNT-conductive polymer composite. When the first contact electrode 61 and the second contact electrode 62 include two or more materials, the first contact electrode 61 and the second contact electrode 62 according to the exemplary embodiment may have a structure in which the two or more materials are stacked.

[0153] In an exemplary embodiment, the first contact electrode 61 and the second contact electrode 62 may be formed in a state where the first alignment signal and the second alignment signal are applied.

[0154] Although the present application has been described with reference to preferred embodiments, various modifications may be made thereto and parts thereof may be replaced with equivalents without departing from the scope of the present application. In particular, the various technical features mentioned in the various embodiments may be combined in any manner as long as there are no structural conflicts. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A display panel, characterized in that: include: A first substrate including a plurality of pixel regions and a plurality of non-pixel regions; Light-emitting devices located on the pixel area and arranged in a predetermined direction; a screening portion located in the non-pixel area and penetrating the first substrate; In a first state, the screening portion allows the light-emitting device located in the non-pixel area to pass through the first substrate; Wherein, the display panel includes a flexible display panel, and the first state includes: in the process of preparing the display panel, after the light-emitting devices located in the pixel area are oriented, the light-emitting devices located in the non-pixel area are in a disordered state. In the first state, the display panel is stretched, and the size of the screening part becomes larger, allowing the light-emitting devices located in the non-pixel area to pass through the enlarged screening part.

2. The display panel according to claim 1, characterized in that: The screening portion is a hollowed-out through groove, so that the light-emitting device located in the non-pixel area passes through the through groove in the first state.

3. The display panel according to claim 2, characterized in that: The cross-sectional shape of the through slot along a first direction is a cross or a polygon, and the first direction is parallel to the plane where the display panel is located.

4. The display panel according to claim 2, characterized in that: The first substrate or the non-pixel area is made of a stretchable material, and the elongation of the first substrate or the non-pixel area is S%; The light emitting device is a columnar structure, and its length dimension L1 is greater than its width dimension or radial dimension. In the first state, the first substrate is in a stretched state, and the maximum inner diameter dimension of the through groove before stretching is L2. Then L2 <L1<L2×(1+S%)。 5. The display panel according to claim 2, characterized in that: The light emitting device is a columnar structure, and its length dimension L1 is greater than its width dimension or radial dimension. The minimum inner diameter dimension of the through slot in the first state is L3, and L3>L1.

6. The display panel according to claim 1, characterized in that: Also comprising a functional layer located on the non-pixel area of ​​the first substrate, the functional layer being used to fill the screening portion in a second state; Among them, the second state includes: in the process of preparing the display panel, after the light-emitting device located in the non-pixel area is screened out from the substrate side of the first substrate through the screening part, the screening part is in a closed state or the size of the screening part is changed and the light-emitting device is not allowed to pass through the first substrate.

7. The display panel according to claim 1, characterized in that: The pixel area further includes an alignment electrode group, and the screening portion is located between two adjacent alignment electrode groups; The alignment electrode group includes a first alignment electrode and a second alignment electrode that are arranged opposite to each other and spaced apart. The plurality of light-emitting devices located on the pixel area are arranged between the first alignment electrode and the second alignment electrode in a predetermined direction.

8. The display panel according to claim 7, characterized in that: It also includes a pair of protrusions located in the pixel area, the pair of protrusions includes a first protrusion and a second protrusion that are oppositely and spaced apart, the first protrusion is arranged corresponding to the first alignment electrode, and the second protrusion is arranged corresponding to the second alignment electrode.

9. The display panel according to claim 8, characterized in that: The first alignment electrode comprises a first alignment electrode and a first driving electrode electrically connected to each other, and the second alignment electrode comprises a second alignment electrode and a second driving electrode electrically connected to each other; The first driving electrode and the second driving electrode are located in the same layer, the first alignment electrode and the second alignment electrode are located in the same layer, and the first driving electrode and the second driving electrode are located above the first alignment electrode and the second alignment electrode; The first driving electrode covers the first protrusion, the second driving electrode covers the second protrusion, the light emitting device is located between the first driving electrode and the second driving electrode, and is arranged in a predetermined direction between the first alignment electrode and the second alignment electrode.

10. The display panel according to claim 8, characterized in that: The first alignment electrode covers the first protrusion, and the second alignment electrode covers the second protrusion.

11. The display panel according to claim 7, characterized in that: It also includes a first contact electrode and a second contact electrode, the first contact electrode is electrically connected to the first alignment electrode and the first electrode of the light emitting device, and the second contact electrode is electrically connected to the second alignment electrode and the second electrode of the light emitting device.

12. A method for preparing a display panel, characterized in that: include: Providing a first substrate, wherein the first substrate includes a plurality of pixel regions and a plurality of non-pixel regions; forming a screening portion penetrating the first substrate in the non-pixel area; forming a plurality of light emitting devices on the first substrate; Arranging the light-emitting devices located in the pixel area in a predetermined direction; In a first state, the light emitting device located in the non-pixel area is passed through the first substrate through the screening portion; Wherein, the display panel includes a flexible display panel, and the first state includes: in the process of preparing the display panel, after the light-emitting devices located in the pixel area are oriented, the light-emitting devices located in the non-pixel area are in a disordered state. In the first state, the display panel is stretched, and the size of the screening part becomes larger, allowing the light-emitting devices located in the non-pixel area to pass through the enlarged screening part.

13. The preparation method according to claim 12, characterized in that: The screening portion is a hollowed-out through groove, so that the light-emitting device located in the non-pixel area passes through the through groove in the first state.

14. The preparation method according to claim 13, characterized in that: The first substrate or the non-pixel area is made of a stretchable material, and the elongation of the first substrate or the non-pixel area is S%; The light emitting device is a columnar structure, and its length dimension L1 is greater than its width dimension or radial dimension. In the first state, the first substrate is in a stretched state, and the maximum inner diameter dimension of the through groove before stretching is L2. Then L2 <L1<L2×(1+S%)。 15. The preparation method according to claim 13, characterized in that: The light emitting device is a columnar structure, and its length dimension L1 is greater than its width dimension or radial dimension. The minimum inner diameter dimension of the through slot in the first state is L3, and L3>L1.

16. The preparation method according to claim 12, characterized in that: After passing the light emitting device located in the non-pixel area through the first substrate through the screening unit, the preparation method further includes: In a second state, a functional layer is formed on the non-pixel region of the first substrate to fill the screening portion; Among them, the second state includes: in the process of preparing the display panel, after the light-emitting device located in the non-pixel area is screened out from the substrate side of the first substrate through the screening part, the screening part is in a closed state or the size of the screening part is changed and the light-emitting device is not allowed to pass through the first substrate.

17. The preparation method according to claim 12, characterized in that: Arranging the light emitting devices located in the pixel area in a predetermined direction comprises: An alignment electrode group is formed in the pixel area of ​​the first substrate, the screening portion is located between two adjacent alignment electrode groups, and the alignment electrode group includes a first alignment electrode and a second alignment electrode that are oppositely and spaced apart; forming the light emitting device between the first alignment electrode and the second alignment electrode; A first alignment signal is applied to the first alignment electrode and a second alignment signal is applied to the second alignment electrode, so that the light emitting devices located between the first alignment electrode and the second alignment electrode are arranged in a predetermined direction.

18. The preparation method according to claim 17, characterized in that: Before forming an alignment electrode group in the pixel area of ​​the first substrate, the method further comprises: A protrusion pair is formed in the pixel area of ​​the first substrate, the protrusion pair including a first protrusion and a second protrusion that are oppositely and spaced apart, wherein the first alignment electrode is arranged corresponding to the first protrusion, and the second alignment electrode is arranged corresponding to the second protrusion.

19. The preparation method according to claim 12, characterized in that: The forming of a plurality of light emitting devices on the first substrate comprises: loading a plurality of light emitting devices in a dispersion into a printer; The first substrate is placed in a low-viscosity solvent, and the plurality of light-emitting devices are printed on the first substrate.

20. The preparation method according to claim 19, characterized in that: After arranging the light-emitting devices located in the pixel area in a predetermined direction, the preparation method further comprises: Decomposing the dispersant on the light-emitting device into a plurality of dispersant fragments by light irradiation; The low viscosity solvent and the plurality of dispersant fragments are removed by heat treatment.

21. The preparation method according to claim 17, characterized in that: Also includes: A first contact electrode and a second contact electrode are deposited on the first alignment electrode and the second alignment electrode respectively, so that the first contact electrode is electrically connected to the first electrode of the light-emitting device and the first alignment electrode, and the second contact electrode is electrically connected to the second electrode of the light-emitting device and the second alignment electrode.

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