Transparent cover plate and preparation method thereof, and electronic device

Abstract

The present application discloses a transparent cover plate and a preparation method thereof, and an electronic device. The transparent cover plate comprises: a transparent substrate, provided with a first side and a second side disposed opposite to each other; a transparent conductive layer disposed on the first side of the transparent substrate; an electrode, electrically connected to the transparent conductive layer, for providing an electrical signal to the transparent conductive layer so that the transparent conductive layer generates heat. In this way, the problem of condensation or fogging of the transparent cover plate of the electronic device in a low temperature environment can be improved, thereby improving the perspective of the transparent cover plate and the performance of the electronic product.

Description

Technical Field

[0001] The present application relates to the technical field of electronic device cover plates, and in particular to a transparent cover plate and a preparation method thereof, and an electronic device. Background Art

[0002] In recent years, with the improvement of living standards, the pace of electronic product updates has become increasingly faster. In addition to the pursuit of fashionable appearance and rich functions, there are usually also high requirements for user experience.

[0003] The inventors of the present application discovered during a long research and development process that when electronic devices such as surveillance cameras are in use, condensation or fogging may occur on the inner side of their transparent covers when the ambient temperature is low, resulting in blurred images. Summary of the invention

[0004] The main technical problem solved by the present application is how to improve the condensation or fogging of the transparent cover of the electronic device in a low temperature environment, so as to improve the perspective of the transparent cover and the performance of the electronic product.

[0005] In order to solve the above technical problems, a technical solution adopted by the present application is to provide a transparent cover. The transparent cover is used in electronic equipment, and comprises: a transparent substrate having a first side and a second side disposed opposite to each other; a transparent conductive layer disposed on the first side of the transparent substrate; and an electrode electrically connected to the transparent conductive layer and used to provide an electrical signal to the transparent conductive layer so that the transparent conductive layer generates heat.

[0006] In a specific embodiment, the transparent cover further includes: a first anti-reflection layer, which is disposed on the second side of the transparent substrate and is used to improve the transmittance of the transparent substrate.

[0007] In a specific embodiment, the first anti-reflection layer includes: at least one intermediate film layer; and a protective layer, wherein the at least one intermediate film layer is disposed between the protective layer and the transparent substrate.

[0008] In a specific embodiment, the intermediate film layer includes: a first film layer; a second film layer, wherein the first film layer is located between the second film layer and the transparent substrate; wherein the refractive index of the second film layer is smaller than the refractive index of the first film layer.

[0009] In a specific embodiment, the first film layer is a Si3N4 film layer, the second film layer is a SiO2 film layer, and the protective layer is a MgF2 film layer.

[0010] In a specific embodiment, the transparent cover further includes: a second anti-reflection layer, which is arranged on the side of the transparent conductive layer away from the transparent substrate, for improving the transmittance of the transparent substrate; an electrode is arranged on the side of the transparent conductive layer away from the transparent substrate, and is located at the periphery of the second anti-reflection layer; and the transparent side of the transparent cover is arranged on the same side as the first side of the transparent cover.

[0011] In a specific embodiment, the second anti-reflection layer includes: a third film layer, a fourth film layer and a fifth film layer stacked in sequence on the side of the transparent conductive layer away from the transparent substrate, and the third film layer is located between the transparent conductive layer and the fourth film layer; wherein the refractive index of the fifth film layer is less than the refractive index of the fourth film layer.

[0012] In a specific embodiment, the fourth film layer is any one of a TiO2 film layer, a Nb2O5 film layer, a Ta2O5 film layer or a Si3N4 film layer, and the third film layer and the fifth film layer are SiO2 film layers.

[0013] In order to solve the above technical problems, a technical solution adopted by the present application is: to provide a method for preparing a transparent cover. The transparent cover at least includes a transparent substrate, a transparent conductive layer, an electrode, a first anti-reflection layer and a second anti-reflection layer, and the preparation method includes: strengthening the transparent substrate; forming a transparent conductive layer on the surface of the first side of the transparent substrate after strengthening by using a coating process; setting two strippable glues at the edge position of the surface of the side of the transparent conductive layer away from the transparent substrate; forming a second anti-reflection layer on the surface of the side of the transparent conductive layer away from the transparent substrate and the surface of the side of the strippable glue away from the transparent conductive layer; peeling off the strippable glue at the edge position and the second anti-reflection layer located on the strippable glue, and setting an electrode at the edge position; forming a first anti-reflection layer on the surface of the second side of the transparent substrate after strengthening, wherein the first side of the transparent substrate is set opposite to the second side.

[0014] In a specific embodiment, the second anti-reflection layer includes a SiO2 coating, a TiO2 coating and another SiO2 film layer. The second anti-reflection layer is formed on the surface of the transparent conductive layer away from the transparent substrate and the surface of the peelable adhesive away from the transparent conductive layer. The second anti-reflection layer includes: forming a SiO2 film layer on the surface of the transparent conductive layer away from the transparent substrate and the surface of the peelable adhesive away from the transparent conductive layer by a coating process; forming a TiO2 film layer on the surface of the SiO2 film layer away from the transparent conductive layer by a coating process; forming another SiO2 film layer on the surface of the TiO2 film layer away from the SiO2 film layer by a coating process; the first anti-reflection layer includes: another SiO2 film layer, a Si3N4 film layer, another SiO2 film layer, another Si3N4 film layer and a MgF2 film layer. The first anti-reflection layer is formed on the surface of the second side of the transparent substrate after the strengthening treatment. : Ar gas and N2 gas are introduced, and a Si target and medium frequency reaction magnetron sputtering are used to form a Si3N4 film layer on the surface of the second side of the transparent substrate after the strengthening treatment; Ar gas and O2 gas are introduced, and a Si target is used to form another SiO2 film layer on the side of a Si3N4 film layer away from the transparent substrate by medium frequency reaction magnetron sputtering; Ar gas and N2 gas are introduced, and a Si target is used to form another Si3N4 film layer on the side of another SiO2 film layer away from the one Si3N4 film layer by medium frequency reaction magnetron sputtering; Ar gas and O2 gas are introduced, and a Si target is used to form another SiO2 film layer on the side of another Si3N4 film layer away from the one SiO2 film layer by medium frequency reaction magnetron sputtering; MgF2 is plated on the side of another SiO2 film layer away from the other Si3N4 film layer by electron beam evaporation to form a MgF2 film layer.

[0015] In order to solve the above technical problems, a technical solution adopted by the present application is to provide an electronic device, which includes a controller and the above transparent cover, wherein the controller is connected to the electrode and is used to provide an electrical signal to the electrode.

[0016] The beneficial effects of the present application are as follows: Different from the prior art, the transparent cover plate used for electronic devices of the present application is provided with a transparent conductive layer and an electrode for providing an electrical signal to the transparent conductive layer on one side of the transparent substrate, so that the transparent conductive layer can generate heat, thereby increasing the temperature of the entire transparent cover plate, and avoiding the problem that the temperature of the transparent cover plate is low in a low temperature environment, while the temperature inside the electronic device (controller, etc.) is high, causing condensation or fogging on the inner side of the transparent cover plate (the side close to the controller). Therefore, the present application can improve the problem of condensation or fogging of the transparent cover plate of the electronic device in a low temperature environment, thereby improving the perspective of the transparent cover plate and the performance of the electronic product. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. Among them:

[0018] Figure 1 It is a structural schematic diagram of the first embodiment of the transparent cover plate of the present application;

[0019] Figure 2 It is a structural schematic diagram of the second embodiment of the transparent cover plate of the present application;

[0020] Figure 3 is a structural schematic diagram of the third embodiment of the transparent cover plate of the present application;

[0021] Figure 4 is a structural schematic diagram of a fourth embodiment of the transparent cover plate of the present application;

[0022] Figure 5 It is a schematic flow chart of an embodiment of a method for preparing a transparent cover plate of the present application;

[0023] Figure 6 yes Figure 5 A schematic diagram of a specific process of step S54 in the method for preparing a transparent cover plate of the embodiment;

[0024] Figure 7 yes Figure 5 A schematic diagram of a specific process of step S56 in the method for preparing a transparent cover plate of the embodiment;

[0025] Figure 8 It is a structural schematic diagram of an embodiment of the electronic device of the present application. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0027] The terms "first" and "second" in this application are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. In the description of this application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically limited. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally also includes steps or units that are not listed, or optionally also includes other steps or units inherent to these processes, methods, products or devices.

[0028] The transparent cover plate of the present application can be used in electronic products such as cameras, projectors, and smart terminals. The transparent cover plate of the following embodiments of the present application will be introduced based on cameras.

[0029] The transparent cover of the camera usually encounters two problems when used outdoors: one is that dust easily adheres to the outer surface, resulting in blurred images in the later stage; the other is that there are components in the internal components of the camera that generate heat. The transparent cover is in direct contact with the external environment, and the temperature of the outer surface is the external temperature. Due to heat conduction, the temperature of the inner surface of the camera cover is basically close to the temperature of the outer surface. When the ambient temperature is low, condensation or fogging is easy to occur on the inner surface of the transparent cover, resulting in blurred images.

[0030] In order to solve the above problems, the present application proposes a transparent cover and an electronic device, which can improve the problem of blurred images caused by condensation or fogging, and solve the problem of dust easily adhering to the outer surface.

[0031] This application first proposes a transparent cover for electronic equipment. Figure 1 As shown, Figure 1 1 is a schematic diagram of the structure of the first embodiment of the transparent cover plate of the present application. The transparent cover plate 10 of the present embodiment includes: a transparent substrate 11, a transparent conductive layer 12 and an electrode 13; wherein the transparent substrate 11 is provided with a first side and a second side disposed opposite to each other; the transparent conductive layer 12 is disposed on the first side of the transparent substrate 11; the electrode 13 is electrically connected to the transparent conductive layer 12, and the electrode 13 is used to provide an electrical signal to the transparent conductive layer 12 so that the transparent conductive layer 12 generates heat.

[0032] The transparent substrate 11 of this embodiment may be transparent glass.

[0033] In other embodiments, the transparent substrate may also be a transparent ceramic or a transparent substrate made of polystyrene or polymethyl methacrylate.

[0034] The transparent cover plate 10 of this embodiment is provided with a transparent conductive layer 12 and an electrode 13 for providing an electrical signal to the transparent conductive layer 12 on one side of the transparent substrate 11, so that the transparent conductive layer 12 can generate heat, thereby increasing the temperature of the entire transparent cover plate 10, and avoiding the problem that the temperature of the transparent cover plate 10 is low in a low temperature environment, while the temperature inside the electronic device (controller, etc.) is high, causing condensation or fogging on the inner side (the side close to the controller) of the transparent cover plate 10. Therefore, this embodiment can improve the problem of condensation or fogging of the transparent cover plate 10 of the electronic device in a low temperature environment, thereby improving the perspective of the transparent cover plate 10 and the performance of the electronic product.

[0035] Optionally, in order to improve the impact resistance of the transparent cover plate 10 , the transparent substrate 11 may be made of tempered glass, that is, glass that has been physically strengthened.

[0036] The transparent substrate 11 of this embodiment includes a window area in the middle region and a non-window area located outside the window area. In order not to affect the perspective of the window area, the projection of the electrode 13 on the transparent substrate 11 is located in the non-window area.

[0037] The electrode 13 of this embodiment includes a first electrode 131 and a second electrode 132 , which are respectively connected to the positive electrode and the negative electrode of the power supply element.

[0038] When the size of the transparent cover plate 10 is fixed, in order to expand the size of the window area as much as possible, the projections of the first electrode 131 and the second electrode 132 on the transparent substrate 11 are evenly distributed in the non-window area.

[0039] The present application further proposes another embodiment of a transparent cover plate, such as Figure 2 As shown, Figure 2 The transparent cover plate 20 of this embodiment is different from the transparent cover plate 10 in that the transparent cover plate 20 of this embodiment further includes a first anti-reflection layer 21, which is disposed on the second side of the transparent substrate 11 to improve the transmittance of the transparent substrate 11.

[0040] Among them, other structures of this embodiment can refer to the above embodiments and will not be described here.

[0041] Optionally, the first anti-reflection layer 21 of this embodiment includes: a protective layer 211 and at least one intermediate film layer 212; at least one intermediate film layer 212 is arranged between the protective layer 211 and the transparent substrate 11; that is, the protective layer 211 is arranged on the side of the intermediate film layer 212 away from the transparent substrate 11, that is, located at the outermost side of the transparent cover plate 20, for protecting the transparent cover plate 20 from external pollution, etc.

[0042] The intermediate film layer 212 of this embodiment includes: a first film layer n1 and a second film layer n2; the first film layer n1 is located between the second film layer n2 and the transparent substrate 11; the refractive index of the second film layer n2 is less than the refractive index of the first film layer n1. This structure can adjust the light (visible light) transmittance spectrum range of the entire cover plate.

[0043] Optionally, the first film layer n1 of this embodiment is a Si3N4 film layer, and the second film layer n2 is a SiO2 film layer. In other embodiments, other types of film layer compositions or single film layers may be used as the intermediate film layer with anti-reflection function, which is not specifically limited.

[0044] The intermediate film layer 212 of the present embodiment is a stacked film layer of Si3N4 film layer and SiO2 film layer, which enables the intermediate film layer 212 to have both excellent passivation effect and low-density surface defects.

[0045] Optionally, the protective layer 211 of this embodiment is a MgF2 film layer; the MgF2 film layer is the outer surface layer of the transparent cover plate 20, has the anti-fouling performance of fluoride, and as an inorganic substance, has better performance and durability. In other embodiments, the protective layer can also be other types of fluoride or other types of protective layers, which are not specifically limited.

[0046] Furthermore, the refractive index of the MgF 2 film layer is lower than that of the SiO 2 film layer, which can further improve the light (visible light) transmittance of the first anti-reflection layer 21 .

[0047] In this embodiment, the first anti-reflection layer 21 includes only one intermediate film layer 212 , which can reduce the thickness of the transparent cover plate 20 .

[0048] In another embodiment, if Figure 3 As shown, in order to increase the transmittance of the transparent cover plate 30 , the first anti-reflection layer 31 of this embodiment may further include two intermediate film layers 212 .

[0049] Of course, in other embodiments, the number of intermediate film layers can also be determined according to specific requirements.

[0050] Specifically, the first anti-reflection layer 31 includes a Si3N4 film layer, a SiO2 film layer, a Si3N4 film layer, a SiO2 film layer and a MgF2 film layer which are sequentially stacked on the second side of the transparent substrate 11.

[0051] Among them, the thickness range of the Si3N4 film layer close to the second side of the transparent substrate 11 can be 8-22nm, and the thickness range can be 8nm, 10nm, 12nm, 14nm, 16nm, 18nm, 20nm and 22nm, etc.; the thickness range of the SiO2 film layer close to the second side of the transparent substrate 11 can be 18-42nm, and the thickness range can be 18nm, 20nm, 24nm, 28nm, 32nm, 36nm, 40nm and 42nm, etc.; the thickness range of the Si3N4 film layer close to the MgF2 film layer can be 78-122nm, and the thickness range can be 78-122nm. The specific range can be 76nm, 80nm, 88nm, 96nm, 104nm, 112nm, 120nm and 122nm etc.; the thickness range of the SiO2 film layer close to the MgF2 film layer can be 48-82nm, and the thickness range can be 48nm, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm and 82nm etc.; the thickness range of the MgF2 film layer can be 18-42nm, and the thickness range can be 18nm, 20nm, 24nm, 28nm, 32nm, 36nm, 40nm and 42nm etc.

[0052] The first anti-reflection layer 31 composed of the MgF2 film layer, the two Si3N4 film layers and the two SiO2 film layers is an optical composite layer with anti-reflection properties. The composite layer has a lower reflectivity of visible light from the outside than the visible light reflectivity corresponding to the transparent glass surface, which can reduce the interference of ambient stray light, so it has the function of increasing the clarity of the transparent cover plate 30.

[0053] The present application further proposes another embodiment of a transparent cover plate, such as Figure 4 As shown, Figure 4 Schematic diagram of the structure of the fourth embodiment of the transparent cover plate of the present application. Figure 3 The difference between the transparent cover plate 30 in the embodiment is that the transparent cover plate 40 in the embodiment further includes: a second anti-reflection layer 41 disposed on the side of the transparent conductive layer 12 away from the transparent substrate 11 , for improving the transmittance of the transparent substrate 11 .

[0054] The second anti-reflection layer 41 of this embodiment includes: a third film layer n3, a fourth film layer n4 and a fifth film layer n5 which are sequentially stacked on the side of the transparent conductive layer 12 away from the transparent substrate 11, and the third film layer n3 is located between the transparent conductive layer 12 and the fourth film layer n4; wherein the refractive index of the fifth film layer n5 is less than the refractive index of the fourth film layer n4. This structure can improve the light (visible light) transmittance of the second anti-reflection layer 41.

[0055] The fourth film layer n4 of this embodiment is a TiO 2 film layer, and the third film layer n3 and the fifth film layer n5 are SiO 2 film layers.

[0056] In other embodiments, the fourth film layer may also be TiO x (x=1.5-2.0) film layer, Nb2O5 film layer, Ta2O5 film layer or Si3N4 film layer. The third film layer and the fifth film layer can be other film layers as long as the second anti-reflection layer has good transmittance. The second anti-reflection layer can also be a single film layer with good transmittance.

[0057] The second anti-reflection layer 41 of the present embodiment is a stacked film of TiO 2 film and SiO 2 film, which enables the second anti-reflection layer 41 to have both excellent passivation effect and low-density surface defects.

[0058] The electrode 13 of the present embodiment is arranged on the side of the transparent conductive layer 12 away from the transparent substrate 11, and is located at the periphery of the second anti-reflection layer 41. The projection of the second anti-reflection layer 41 on the transparent substrate 11 overlaps with the window area of ​​the transparent substrate 11, and the projection of the electrode 13 on the transparent substrate 11 overlaps with the non-window area of ​​the transparent substrate 11, which can not affect the perspective of the window area and does not increase the size of the transparent cover 40.

[0059] The transparent conductive layer 12 of this embodiment can be an indium tin oxide (ITO) layer, which serves as a planar heater of the transparent substrate 11. When powered on, it heats the transparent substrate 11. Under appropriate voltage control, the temperature of the transparent substrate 11 can reach a level that is relatively several degrees Celsius to more than ten degrees Celsius higher than the ambient temperature. Through the design of the circuit, the surface temperature of the window area of ​​the transparent substrate 11 is relatively high. In a low temperature or humid external environment, the temperature reaches above the dew point temperature corresponding to the environment, thereby effectively avoiding condensation or fogging of the window or lens. On the other hand, the ITO layer, as a transparent medium layer, realizes an optical composite layer with a light-enhancing function with the third film layer n3, the fourth film layer n4 and the fifth film layer n5. The composite layer has a lower reflectivity of visible light to the outside world than the visible light reflectivity corresponding to the transparent glass surface, which can reduce the interference of environmental stray light, so it has the function of increasing the clarity of the transparent cover plate 40; the electrode 13 can be a silver electrode layer, which is a lead electrode of the heating circuit in the electronic device and contacts the ITO layer.

[0060] The thickness of the transparent conductive layer 12 may be in the range of 18-42 nm, and the thickness may be specifically 18 nm, 20 nm, 24 nm, 28 nm, 32 nm, 36 nm, 40 nm, and 42 nm, etc. The surface resistance of the transparent conductive layer 12 may be in the range of 40-100 ohms / square (Ohm / Square), and the resistance may be specifically 40 Ohm / Square, 50 Ohm / Square, 60 Ohm / Square, 70 Ohm / Square, 80 Ohm / Square, 90 Ohm / Square, 100 Ohm / Square, and 110 Ohm / Square. The third film layer n3 The thickness range of the TiO2 film layer (SiO2 film layer) can be 28-47nm, and the specific thickness range can be 28nm, 30nm, 34nm, 38nm, 42nm, 45nm and 47nm, etc.; the thickness range of the fourth film layer n4 (TiO2 film layer) can be 78-107nm, and the specific thickness range can be 78nm, 80nm, 85nm, 90nm, 95nm, 100nm, 105nm and 107nm, etc.; the thickness range of the fifth film layer n5 (SiO2 film layer) can be 68-98nm, and the specific thickness range can be 68nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm and 98nm, etc.

[0061] The present application further proposes a method for preparing a transparent cover plate, which can be used for the transparent cover plate of the above embodiment. Figure 5 As shown, Figure 5 1 is a flow chart of an embodiment of a method for preparing a transparent cover plate of the present application. The preparation method of this embodiment specifically comprises the following steps:

[0062] Step S51: performing a strengthening process on the transparent substrate.

[0063] The transparent substrate is physically strengthened to improve the impact resistance of the transparent cover.

[0064] Step S52: forming a transparent conductive layer on the surface of the first side of the transparent substrate after the strengthening treatment by using a coating process.

[0065] The transparent conductive layer may be an ITO layer.

[0066] Step S53: two strippable adhesives are provided at the edge of the surface of the transparent conductive layer facing away from the transparent substrate.

[0067] The electrodes of this embodiment include a first electrode and a second electrode, which are respectively connected to the positive and negative electrodes of the power supply element; the transparent substrate includes a window area in the middle area and a non-window area located outside the window area. In order not to affect the perspective of the window area, the projection of the electrode on the transparent substrate is located in the non-window area. Therefore, the projection of the peelable glue on the transparent substrate is located in the non-window area.

[0068] Step S54: forming a second anti-reflection layer on a surface of the transparent conductive layer facing away from the transparent substrate and a surface of the peelable adhesive facing away from the transparent conductive layer.

[0069] The second anti-reflection layer of this embodiment may include a SiO2 coating, a TiO2 coating and another SiO2 film layer; this embodiment may be Figure 6 The method shown implements step S54. The method of this embodiment includes steps S61 to S63.

[0070] Step S61: forming a SiO2 film layer on the surface of the transparent conductive layer facing away from the transparent substrate and the surface of the peelable adhesive facing away from the transparent conductive layer through a coating process.

[0071] Step S62: forming a TiO2 film layer on a surface of a SiO2 film layer facing away from the transparent conductive layer through a coating process.

[0072] Step S63: forming another SiO2 film layer on the surface of the TiO2 film layer on the side away from the SiO2 film layer through a coating process.

[0073] By forming a stacked film layer of TiO2 film layer and SiO2 film layer through steps S61 to S63, the second anti-reflection layer can have both excellent passivation effect and low-density surface defects.

[0074] Step S55: peeling off the peelable adhesive at the edge position and the second anti-reflection layer on the peelable adhesive, and setting electrodes at the edge position.

[0075] Step S56: forming a first anti-reflection layer on the surface of the second side of the transparent substrate after the strengthening treatment, wherein the first side and the second side of the transparent substrate are arranged opposite to each other.

[0076] The first anti-reflection layer of this embodiment may include: another SiO2 film layer, a Si3N4 film layer, another SiO2 film layer and a MgF2 film layer. Figure 7 The method shown implements step S56. The method of this embodiment includes steps S71 to S75.

[0077] Step S71: Ar gas and N2 gas are introduced, and a Si3N4 film layer is formed on the surface of the second side of the transparent substrate after the strengthening treatment using a Si target and a medium-frequency reactive magnetron sputtering method.

[0078] Step S72: introducing Ar gas and O2 gas, using a Si target, and forming another SiO2 film layer on the surface of a Si3N4 film layer facing away from the transparent substrate by medium frequency reactive magnetron sputtering.

[0079] Step S73: introducing Ar gas and N2 gas, using a Si target, and forming another Si3N4 film layer on the surface of another SiO2 film layer away from the Si3N4 film layer by medium frequency reactive magnetron sputtering.

[0080] Step S74: introducing Ar gas and O2 gas, using a Si target, and forming another SiO2 film layer on the surface of another Si3N4 film layer facing away from another SiO2 film layer by medium frequency reactive magnetron sputtering.

[0081] The first anti-reflection layer adopts a stacked film layer of Si3N4 film layer and SiO2 film layer, which can take into account both excellent passivation effect and low-density surface defects.

[0082] Step S75: Electron beam evaporation is used to perform MgF2 coating on the surface of another SiO2 film layer that is away from the other Si3N4 film layer, so as to form a MgF2 film layer.

[0083] The MgF2 film layer is the outer surface layer of the transparent cover plate, and has the anti-fouling performance of fluoride. At the same time, as an inorganic substance, it has better performance and durability.

[0084] In other embodiments, it is also possible to base on the above other embodiments, such as Figure 1 , Figure 2 The embodiment provides the second anti-reflection layer.

[0085] The first side of the transparent cover plate 11 in the above embodiment of the present application is arranged on the same side as the transparent side of the transparent cover plate 11, that is, the electrode 13 and the transparent conductive layer 12 are located on the inner side of the transparent cover plate 11 (the side opposite to the transparent side), which can facilitate the connection of the electrode 13 with the power supply element in the electronic device.

[0086] The transparent cover of this application has the following properties:

[0087] The visible light transmittance can reach 97%; the deionized water contact angle is 110°; the heating impedance value is 20-50 ohms; the 24V heating power is 11-25 watts; the 12V heating power is 3-7 watts; the 4.5V heating power is 0.5-1 watt, etc.

[0088] The present application further proposes an electronic device, such as Figure 8 As shown, Figure 81 is a schematic diagram of the structure of an embodiment of an electronic device of the present application. The electronic device 80 of the present embodiment includes a controller 81 and a transparent cover plate 82. The controller 81 is connected to the transparent cover plate 82 and is used to provide an electrical signal to the transparent cover plate 82 so that the transparent cover plate 82 generates heat, thereby increasing the temperature of the transparent cover plate 82. This can avoid the problem of condensation or fogging on the inner side of the transparent cover plate 82 due to the low temperature of the transparent cover plate 82 and the high temperature inside the electronic device 80 in a low temperature environment.

[0089] The structure and working principle of the transparent cover plate 82 of this embodiment can be found in the above embodiments and will not be described in detail here.

[0090] Furthermore, the electronic device 80 of this embodiment may also include a temperature sensor (not shown) and a controller 81. The controller 81 controls the temperature sensor to obtain the external environment temperature and controls the heating of the transparent cover 82 according to the external environment temperature.

[0091] Furthermore, the electronic device 80 of this embodiment may also include other temperature sensors (not shown) for detecting the internal temperature of the electronic device 80 and controlling the heating of the transparent cover 82 according to the external environment temperature of the internal thermometer.

[0092] Specifically, the controller 81 of the present embodiment is connected to the electrode 13 and is used to provide an electrical signal to the electrode 13 so as to control the transparent conductive layer 12 connected to the electrode 13 to heat the transparent substrate 11 .

[0093] The electronic device 80 of this embodiment may be a camera, a projector, a smart terminal, etc.

[0094] Different from the prior art, the transparent cover of the present application is used for electronic devices, and the transparent cover includes: a transparent substrate, provided with a first side and a second side disposed opposite to each other; a transparent conductive layer, disposed on the first side of the transparent substrate; an electrode, electrically connected to the transparent conductive layer, and used to provide an electrical signal to the transparent conductive layer, so that the transparent conductive layer generates heat. The transparent cover of the present application is provided with a transparent conductive layer and an electrode for providing an electrical signal to the transparent conductive layer on one side of the transparent substrate, so that the transparent conductive layer can generate heat, thereby increasing the temperature of the entire transparent cover, and avoiding the problem that the temperature of the transparent cover is low in a low temperature environment, while the temperature inside the electronic device (controller, etc.) is high, causing condensation or fogging on the inner side of the transparent cover (the side close to the controller). Therefore, the present application can improve the problem of condensation or fogging of the transparent cover of the electronic device in a low temperature environment, thereby improving the perspective of the transparent cover and the performance of the electronic product.

[0095] Furthermore, the heat generated by the transparent cover plate of the present application is uniform over the entire surface, and each point in the window area can achieve synchronous and uniform heating; the transparent cover plate of the present application has anti-fouling properties, and is based on fluoride, and has better performance stability; the transparent cover plate of the present application has higher visible light transmittance and lower visible light reflectivity than ordinary glass cover plates, thereby improving the clarity of surveillance images; the glass of the transparent cover plate of the present application has been physically strengthened, and has high impact resistance.

[0096] The above description is only an implementation method of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A transparent cover plate, characterized in that: For electronic equipment, the transparent cover comprises: A transparent substrate having a first side and a second side disposed opposite to each other; a transparent conductive layer disposed on the first side of the transparent substrate; an electrode, electrically connected to the transparent conductive layer, and used to provide an electrical signal to the transparent conductive layer so that the transparent conductive layer generates heat; Wherein, the transparent cover further comprises: a second anti-reflection layer, which is arranged on a side of the transparent conductive layer away from the transparent substrate, and is used to improve the transmittance of the transparent substrate; The electrode is arranged on a side of the transparent conductive layer away from the transparent substrate and is located at the periphery of the second anti-reflection layer; The see-through side of the transparent cover is disposed on the same side as the first side of the transparent cover; The transparent cover further comprises: a first anti-reflection layer, which is arranged on the second side of the transparent substrate and is used to improve the transmittance of the transparent substrate; the first anti-reflection layer comprises a Si3N4 film layer, a SiO2 film layer, a Si3N4 film layer, a SiO2 film layer and a MgF2 film layer which are sequentially stacked on the second side of the transparent substrate; The thickness of the Si3N4 film layer close to the second side of the transparent substrate is in the range of 8-22 nm, the thickness of the SiO2 film layer close to the second side of the transparent substrate is in the range of 18-42 nm, the thickness of the Si3N4 film layer close to the MgF2 film layer is in the range of 78-122 nm, the thickness of the SiO2 film layer close to the MgF2 film layer is in the range of 48-82 nm, and the thickness of the MgF2 film layer is in the range of 18-42 nm; Among them, the second anti-reflection layer includes: a third film layer, a fourth film layer and a fifth film layer stacked in sequence on the side of the transparent conductive layer away from the transparent substrate, the third film layer is located between the transparent conductive layer and the fourth film layer; wherein the refractive index of the fifth film layer is less than the refractive index of the fourth film layer; the fourth film layer is any one of a TiO2 film layer, a Nb2O5 film layer, a Ta2O5 film layer or a Si3N4 film layer, and the third film layer and the fifth film layer are SiO2 film layers; the thickness range of the third film layer is 28-47nm, the thickness range of the fourth film layer is 78-107nm, and the thickness range of the fifth film layer is 68-98nm; the thickness range of the transparent conductive layer is 18-42nm.

2. A method for preparing a transparent cover plate, characterized in that: The transparent cover plate at least comprises a transparent substrate, a transparent conductive layer, an electrode, a first anti-reflection layer and a second anti-reflection layer, and the preparation method comprises: Performing a strengthening treatment on the transparent substrate; Forming the transparent conductive layer on the surface of the first side of the transparent substrate after the strengthening process by using a coating process; Two strippable adhesives are arranged at the edge of the surface of the transparent conductive layer facing away from the transparent substrate; Forming the second anti-reflection layer on a surface of the transparent conductive layer facing away from the transparent substrate and a surface of the peelable adhesive facing away from the transparent conductive layer; Peeling off the peelable adhesive at the edge position and the second anti-reflection layer on the peelable adhesive, and arranging the electrode at the edge position, so that the electrode is arranged on the side of the transparent conductive layer away from the transparent substrate and is located at the periphery of the second anti-reflection layer; forming the first anti-reflection layer on the surface of the second side of the transparent substrate after the strengthening treatment, wherein the first side and the second side of the transparent substrate are arranged opposite to each other; The second anti-reflection layer includes a SiO2 film layer, a TiO2 film layer and another SiO2 film layer, and the second anti-reflection layer is formed on the surface of the transparent conductive layer away from the transparent substrate and the surface of the peelable adhesive away from the transparent conductive layer. Forming the SiO2 film layer on the surface of the transparent conductive layer facing away from the transparent substrate and the surface of the peelable adhesive facing away from the transparent conductive layer by a coating process; Forming the TiO2 film layer on the surface of the SiO2 film layer facing away from the transparent conductive layer by a coating process; Forming another SiO2 film layer on the surface of the TiO2 film layer away from the one SiO2 film layer by a coating process; The first anti-reflection layer includes: another SiO2 film layer, a Si3N4 film layer, another SiO2 film layer, another Si3N4 film layer and a MgF2 film layer, and the first anti-reflection layer is formed on the surface of the second side of the transparent substrate after the strengthening treatment, including: Ar gas and N2 gas are introduced, and a Si target and medium frequency reactive magnetron sputtering method are used to form the Si3N4 film layer on the surface of the second side of the transparent substrate after the strengthening treatment; Ar gas and O2 gas are introduced, and a Si target is used to form the further SiO2 film layer on the surface of the Si3N4 film layer facing away from the transparent substrate by medium frequency reactive magnetron sputtering; Ar gas and N2 gas are introduced, and a Si target is used to form the other Si3N4 film layer on the surface of the other SiO2 film layer away from the one Si3N4 film layer by medium frequency reactive magnetron sputtering; Ar gas and O2 gas are introduced, and a Si target is used to form the further SiO2 film layer on the surface of the further Si3N4 film layer away from the further SiO2 film layer by medium frequency reactive magnetron sputtering; Electron beam evaporation is used to perform MgF2 coating on the surface of the one side of the further SiO2 film layer away from the another Si3N4 film layer to form a MgF2 film layer; The thickness of a Si3N4 film layer close to the second side of the transparent substrate is in the range of 8-22 nm, the thickness of another SiO2 film layer close to the second side of the transparent substrate is in the range of 18-42 nm, the thickness of another Si3N4 film layer close to the MgF2 film layer is in the range of 78-122 nm, the thickness of another SiO2 film layer close to the MgF2 film layer is in the range of 48-82 nm, and the thickness of the MgF2 film layer is in the range of 18-42 nm. Among them, in the second anti-reflection layer, the thickness range of the SiO2 film layer is 28-47nm, the thickness range of the TiO2 film layer is 78-107nm, the thickness range of the other SiO2 film layer is 68-98nm; the thickness range of the transparent conductive layer is 18-42nm.

3. An electronic device, characterized in that: It comprises a controller and the transparent cover plate according to claim 1, wherein the controller is connected to the electrode and is used to provide an electrical signal to the electrode.

Images