Reactor system including regulating circuit

Abstract

A base assembly for a reactor system may include a base body defined by a base outer edge, the base body including a base outer portion and a base inner portion, wherein the base outer portion is adjacent to the base outer edge and the base inner portion is at least partially enclosed within the base outer portion; a first adjustment circuit including an edge electrode and a first resonant circuit coupled to the edge electrode, wherein the edge electrode is coupled to the base body; a second adjustment circuit including a central electrode and a second resonant circuit coupled to the central electrode, wherein the central electrode is coupled to the base body; wherein the edge electrode is arranged to be closer to the base outer edge than the central electrode.

Description

Technical Field

[0001] The present disclosure relates generally to a semiconductor processing or reactor system, and more particularly to a semiconductor reactor system, and components included therein, that promote more uniform processing across surfaces within the reactor, such as on a substrate. Background Art

[0002] The reaction chamber can be used to process the substrate therein (for example, various material layers are deposited onto a semiconductor substrate). The substrate can be placed on a susceptor within the reaction chamber. Both the substrate and the susceptor can be heated to a desired substrate temperature set point. In an exemplary substrate processing process, one or more reactant gases can be passed over the heated substrate so that a thin film of material is deposited on the substrate surface. During subsequent deposition, doping, photolithography, etching, and other processes, these layers can be manufactured into integrated circuits.

[0003] The deposition or other processing on the surface of the substrate can have a desired pattern. For example, it may be desirable to have (multiple) layers of deposited material on the substrate that have a uniform thickness on the substrate surface. That is, an average deposition of material may be desirable. However, in some instances, the deposition of material at or near a portion of the substrate (e.g., the edge of the substrate) may be different from the deposition on another area of ​​the substrate (e.g., an area closer to the center of the substrate). Accordingly, systems and methods that allow the ability to adjust the amount of processing on the substrate in certain areas of the substrate (e.g., to promote a more average and / or uniform deposition on the surface of the substrate) are therefore desirable. Summary of the Invention

[0004] This summary is provided to introduce a selection of concepts in a simplified form. These concepts are further described in detail in the detailed description of example embodiments of the present disclosure below. This summary is neither intended to identify key features or essential features of the claimed subject matter nor to be used to limit the scope of the claimed subject matter.

[0005] In some embodiments, a reactor system is provided. The reactor system disclosed herein can allow for tunable material deposition on a substrate and / or processing of the substrate, for example to achieve more uniform material deposition on a substrate and / or processing of the substrate.

[0006] In various embodiments, a reactor system may include: a susceptor assembly including a susceptor body defined by a susceptor outer edge, the susceptor body including a susceptor outer portion and a susceptor inner portion, wherein the susceptor outer portion is adjacent to the susceptor outer edge and the susceptor inner portion is at least partially enclosed within the susceptor outer portion; a first tuning circuit including an edge electrode and a first resonant circuit coupled to the edge electrode, wherein the edge electrode is coupled to the susceptor body; and a second tuning circuit including a center electrode and a second resonant circuit coupled to the center electrode, wherein the center electrode is coupled to the susceptor body. The edge electrode may be positioned closer to the susceptor outer edge than the center electrode. In various embodiments, the first resonant circuit may include a first capacitor and / or a first inductor. In various embodiments, the first capacitor may have a first adjustable capacitance and / or the first inductor may have a first adjustable inductance. In various embodiments, the first resonant circuit may further include a first additional capacitor. In various embodiments, the second resonant circuit may include a second capacitor and / or a second inductor. In various embodiments, the second capacitor may have a second adjustable capacitance and / or the second inductor may have a second adjustable inductance. In various embodiments, the second resonant circuit may further include a second additional capacitor.

[0007] In various embodiments, the edge electrode may span along at least a portion of the base outer portion. In various embodiments, the base assembly may further include a second edge electrode, the second edge electrode spanning along a second portion of the base outer portion. The second portion of the base outer portion may be different from the portion of the base outer portion along which the edge electrode spans. In various embodiments, the second edge electrode may be included in a first modulation circuit and coupled to the first resonant circuit, and / or the second edge electrode may be included in a third modulation circuit and coupled to a third resonant circuit of the third modulation circuit. In various embodiments, the first modulation circuit may further include a first lead coupled to and between the edge electrode and the first resonant circuit, and / or the second modulation circuit may further include a second lead coupled to and between the center electrode and the second resonant circuit. In various embodiments, an outer edge of the edge electrode may at least partially define a first shape, wherein an edge electrode void may be disposed within the first shape and at least partially enclosed by the edge electrode.

[0008] In various embodiments, the central electrode can be defined by a central electrode outer edge and can be disposed within the pedestal interior portion and can span at least a portion of the pedestal interior portion. The central electrode can be at least partially disposed within an edge electrode gap. In various embodiments, the pedestal assembly can further include a second central electrode, the second central electrode being at least partially disposed within the edge electrode gap and spanning a second portion of the pedestal interior portion, wherein the second portion of the pedestal interior portion can be different from the portion of the pedestal interior portion spanned by the central electrode. In various embodiments, the second central electrode can be included in a second modulation circuit and coupled to a second resonant circuit, and / or the second central electrode can be included in a third modulation circuit and coupled to a third resonant circuit of the third modulation circuit. In various embodiments, the central electrode outer edge can at least partially define a second shape. In various embodiments, the first shape and the second shape can be concentric.

[0009] In various embodiments, a susceptor for a reactor system may include: a susceptor body defined by a susceptor outer edge, the susceptor body including a susceptor outer portion and a susceptor inner portion, wherein the susceptor outer portion may be adjacent to the susceptor outer edge and the susceptor inner portion may be within the susceptor outer portion; an edge electrode coupled to the susceptor body; and / or a central electrode coupled to the susceptor body. The edge electrode may be positioned closer to the susceptor outer edge than the central electrode. In various embodiments, a first impedance of the edge electrode may be adjustable, and / or a second impedance of the central electrode may be adjustable. In various embodiments, the edge electrode may span along at least a portion of the susceptor outer portion, defining at least a portion of an edge electrode shape, wherein the edge electrode at least partially encloses an edge electrode void. The central electrode may be defined by a central electrode outer edge, wherein the central electrode may be positioned within the susceptor inner portion and at least partially within the edge electrode void. In various embodiments, the edge electrode shape may include a first circular shape, and / or the central electrode outer edge may include a second circular shape.

[0010] In various embodiments, the method may include adjusting the impedance of at least one of the first resonant circuit and the second resonant circuit; in response to adjusting the impedance of the first resonant circuit, adjusting a first electric field adjacent to a first electrode coupled to the first resonant circuit, wherein the first electrode is coupled to the pedestal; and / or in response to adjusting the impedance of the second resonant circuit, adjusting a second electric field adjacent to a second electrode coupled to the second resonant circuit, wherein the second electrode may be coupled to the pedestal at a different portion than the first electrode. In various embodiments, the first electrode may span along at least a portion of an outer portion of the pedestal, wherein the outer portion of the pedestal may be adjacent to an outer edge of the pedestal. The second electrode may be disposed at an inner portion of the pedestal, wherein the inner portion of the pedestal may be within the outer portion of the pedestal.

[0011] To summarize the present disclosure and the advantages achieved over the prior art, certain objects and advantages of the present disclosure have been described herein above. Of course, it will be understood that not all of these objects or advantages may be achieved according to any particular embodiment of the present disclosure. Thus, for example, one skilled in the art will recognize that the embodiments disclosed herein may be performed in a manner that achieves or optimizes one advantage or group of advantages as taught or proposed herein without necessarily achieving other objects or advantages as taught or proposed.

[0012] All such embodiments are intended to be within the scope of the present disclosure.These and other embodiments will become readily apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, the present disclosure not being limited to any particular embodiment discussed. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] While the specification concludes with claims that particularly point out and distinctly claim what are considered to be embodiments of the present disclosure, the advantages of the embodiments of the present disclosure may be more readily ascertained from the description of certain examples of the embodiments of the present disclosure when read in conjunction with the accompanying drawings. Elements having like reference numerals are intended to be the same elements throughout the drawings.

[0014] Figure 1 is a schematic diagram of an exemplary reactor system according to various embodiments;

[0015] Figure 2A is a schematic diagram of an exemplary reaction chamber with a susceptor disposed in a lower position according to various embodiments;

[0016] Figure 2B is a schematic diagram of an exemplary reaction chamber having a susceptor disposed in a raised position according to various embodiments;

[0017] Figure 3 illustrates a cross-sectional view of a base including an electrode according to various embodiments;

[0018] Figure 4 illustrates a top view of an electrode configured to be coupled to and / or disposed in a base according to various embodiments;

[0019] Figure 5 illustrates a method of processing a substrate in a reactor system according to various embodiments; and

[0020] Figures 6A-6D Graphs illustrating an electric field above a substrate on a pedestal including edge electrodes and a center electrode are depicted, wherein the edge electrodes and the center electrode are varied to impedance levels, according to various embodiments. DETAILED DESCRIPTION

[0021] Although certain embodiments and examples are disclosed below, those skilled in the art will appreciate that the disclosure extends beyond the specifically disclosed embodiments and / or uses of the disclosure and obvious modifications and equivalents thereof. Therefore, the scope of the disclosure is not intended to be limited by the specific embodiments described herein.

[0022] The illustrations presented herein are not meant to be actual views of any particular material, device, structure, or apparatus, but are merely representations used to describe embodiments of the present disclosure.

[0023] As used herein, the term "substrate" may refer to any underlying material or materials that may be used, or materials upon which devices, circuits, or films may be formed.

[0024] As used herein, the term "atomic layer deposition" (ALD) may refer to a vapor deposition process in which deposition cycles (preferably, multiple consecutive deposition cycles) are performed in a process chamber. Typically, during each cycle, a precursor is chemically adsorbed to a deposition surface (e.g., a substrate surface or a previously deposited bottom surface, such as material from a previous ALD cycle) to form a monolayer or sub-monolayer that is not easily reacted with other precursors (i.e., a self-limiting reaction). Thereafter, if desired, a reactant (e.g., another precursor or a reactive gas) may be subsequently introduced into the process chamber for converting the chemically adsorbed precursor into the desired material on the deposition surface. Typically, the reactant is capable of further reacting with the precursor. In addition, during each cycle, after the chemically adsorbed precursor is converted, a purge step may also be used to remove excess precursor from the process chamber and / or remove excess reactant and / or reaction byproducts from the process chamber. In addition, as used herein, the term "atomic layer deposition" is also intended to include processes designated by related terms such as "chemical vapor atomic layer deposition," "atomic layer epitaxy" (ALE), molecular beam epitaxy (MBE), gas source MBE or organometallic MBE, and chemical beam epitaxy when the process is performed using alternating pulses of (multiple) precursor components, reactive gases and purge (e.g., inert carrier) gases.

[0025] As used herein, the term "chemical vapor deposition" (CVD) may refer to any process that exposes a substrate to one or more volatile precursors that react and / or decompose on the substrate surface to produce the desired deposit.

[0026] As used herein, the terms "film" and "thin film" may refer to any continuous or discontinuous structure and material deposited by the methods disclosed herein. For example, "film" and "thin film" may include 2D materials, nanorods, nanotubes, or nanoparticles, or even partial or complete molecular layers, or partial or complete atomic layers, or atomic and / or molecular clusters. "Film" and "thin film" may include materials or layers that have pinholes, but are still at least partially continuous.

[0027] As used herein, the term "contaminant" may refer to any undesirable material disposed within a reaction chamber that may affect the purity of a substrate disposed within the reaction chamber. The term "contaminant" may refer to, but is not limited to, undesirable deposits, metallic and non-metallic particles, impurities, and waste products disposed within the reaction chamber.

[0028] Reactor systems for ALD, CVD, etc. can be used for a variety of applications, including depositing and etching materials on substrate surfaces. In various embodiments, reference is made to Figure 1 , reactor system 50 can include a reaction chamber 4, a susceptor 6 to hold a substrate 30 during processing, a fluid distribution system 8 (e.g., a showerhead) to distribute one or more reactants to the surface of substrate 30, one or more reactant sources 10, 12, and / or a carrier gas and / or purge gas source 14, fluidly coupled to reaction chamber 4 via lines 16-20 and valves or controllers 22-26. System 50 can also include a vacuum source 28 fluidly coupled to reaction chamber 4.

[0029] Steering Figure 2A and Figure 2B Embodiments of the present disclosure may include reactor systems and methods that can be used to process substrates within a reactor system 100. In various embodiments, the reactor system 100 can include a reaction chamber 110 for processing substrates. In various embodiments, the reaction chamber 110 can include a reaction space 112 (i.e., an upper chamber), which can be configured to process one or more substrates, and / or a lower chamber space 114 (i.e., a lower chamber). The lower chamber space 114 can be configured to load and unload substrates from the reaction chamber, and / or provide a pressure differential between the lower chamber space 114 and the reaction space 112.

[0030] In various embodiments, the reaction space 112 and the lower chamber space 114 can be separated by a pedestal 130 disposed in the reaction chamber 110. In various embodiments, the reaction space 112 and the lower chamber space 114 can be substantially fluidically separated or isolated from each other. For example, the pedestal 130 can fluidly separate the reaction space 112 and the lower chamber space 114 by creating at least a partial seal (i.e., at least restricting fluid flow) between the pedestal 130 and the chamber sidewall 111 of the reaction chamber 110 disposed adjacent to the pedestal outer edge 132 of the pedestal 130. That is, the space 108 between the pedestal 130 and the chamber sidewall 111 can be minimized or eliminated such that there is little or no fluid movement between the pedestal 130 and the chamber sidewall 111.

[0031] In various embodiments, to prevent or reduce fluid flow between the pedestal 130 and the chamber sidewalls 111, one or more sealing members (e.g., sealing member 129) may extend from the pedestal 130 (e.g., from the pedestal outer edge 132) and / or from the chamber sidewalls 111 of the reaction chamber 110 to the other, creating at least a partial seal (i.e., restricting or preventing fluid flow) between the pedestal 130 and the chamber sidewalls 111. At least partial sealing of the reaction volume 112 from the lower chamber volume 114 may be desirable to prevent or reduce precursor gases and / or other fluids used in processing the substrate 150 from entering and / or contacting the lower chamber volume 114 of the reaction chamber 110. For example, the precursor gases used to process the substrate in the reaction volume may include corrosive deposition precursors, which may contact the lower chamber volume 114 and generate undesirable deposits / contaminants / particles, which may in turn be reintroduced into the reaction volume 112, thereby providing a source of contamination for the substrate disposed therein.

[0032] In various embodiments, although the sealing member 129 extending between the base 130 and the chamber sidewall 111 of the reaction chamber 110 and / or the at least partial seal formed by the direct contact between the base 130 and the chamber sidewall 111 of the reaction chamber 110 can limit or substantially prevent the reaction space 112 from being fluidly connected to the lower chamber space 114 through the space 108, a small volume of precursor gas may still enter the lower chamber space 114 by diffusion, which may lead to possible corrosion, unwanted deposition and contaminants in the lower chamber of the reaction chamber of the reactor system.

[0033] In various embodiments, the susceptor 130 may include one or more pin holes 137. Each pin hole 137 may extend through the susceptor 130 from a top surface of the susceptor 130 (e.g., a substrate support surface 135 on which a substrate 150 may be disposed for processing) to a bottom surface 136 of the susceptor 130. The susceptor top surface (e.g., substrate support surface 135) may be a surface of the susceptor 130 adjacent to the reaction volume 112 of the reaction chamber 110. The susceptor bottom surface 136 may be a surface of the susceptor 130 adjacent to the lower chamber volume 114 of the reaction chamber 110. In the absence of a lift pin disposed in the pin hole 137, the reaction volume 112 and the lower chamber volume 114 may be in fluid communication with each other through the pin hole 137. That is, the pin hole(s) 137 may be in fluid communication with the reaction volume 112 and the lower chamber volume 114.

[0034] A lift pin 140 (or other similar object) can be disposed in each pin hole 137. Each lift pin can include a lift pin body configured to span at least a portion of the pin hole 137 when disposed in the pin hole 137. The lift pin body can include a cross-sectional shape that is complementary to the cross-sectional shape of the pin hole 137. In various embodiments, a pin top surface of each lift pin can be configured to contact the substrate 150 to move the substrate 150 relative to the susceptor 130. For example, the lift pin(s) 140 can move the substrate 150 up and down relative to the susceptor 130 (i.e., increase or decrease the space between the substrate 150 and the susceptor 130). Placing the substrate on the lift pins can facilitate loading or unloading the substrate from the reaction chamber, for example, through an opening in a chamber sidewall (e.g., opening 98).

[0035] As discussed, the substrate 150 and the pedestal 130 can be movable relative to each other. For example, in various embodiments, one or more lift pins 140 can be configured to allow the substrate 150 to be separated from the pedestal 130 and to allow the substrate 150 to be placed in contact with (i.e., supported by) the pedestal 130. In various embodiments, the pedestal 130 can be moved up or down, for example, via the pedestal elevator 104, so that the pedestal 130 moves relative to the substrate 150. In various embodiments, the lift pins 140 can be moved up or down, for example, via the lift pin elevator / platform 142, so that the substrate 150 moves relative to the pedestal 130. In various embodiments, the pedestal 130 and / or the lift pins 140 can be stationary while the other moves. In various embodiments, the pedestal 130 and / or the lift pins 140 can be configured to move relative to the other.

[0036] In various embodiments, the reactor system can include a susceptor (e.g., susceptor 130). A substrate (e.g., substrate 150) can be placed directly on top of the susceptor (e.g., on substrate support surface 135 of susceptor 130) for processing. In various embodiments, the top surface of the susceptor can be placed on the same plane as the substrate support surface 135. In various embodiments, the substrate support surface can be recessed into the susceptor such that a recess exists in the top surface of the susceptor. The recess comprising substrate support surface 135 can include a height such that at least a portion of the height of substrate 150 is disposed in the recess. The recess can include a height such that when the substrate is placed on the substrate support surface and within the recess, the top surface of the substrate is flush with the top surface of the susceptor.

[0037] In various embodiments, once the substrate 150 is positioned on the lift pins 140, the base 130 can be moved from the loading position 103 to the processing position 106, receiving the substrate 150 during such movement. In such embodiments, the pin tips and / or pin heads or top surfaces of the lift pins 140 can be positioned by the pin holes 137 ( Figure 337 in the lift pins 140, and thus, the substrate 150 can directly contact the susceptor 130. In various embodiments, once the substrate 150 is disposed on the lift pins 140, the lift pins 140 can be moved downward into the susceptor 130 so that the substrate 150 is received by the susceptor 130 (i.e., so that the substrate 150 rests on the substrate support surface 135). In response, the pin tips (e.g., the pin tips 310 of the lift pins 300) can be flush with and / or below the substrate support surface 135. The substrate 150 can then be processed within the reaction chamber.

[0038] During processing of a substrate on a susceptor, an electric field may be formed at or around one or more portions of the susceptor. Without being limited by theory, differences in the electric field(s) at different locations adjacent to the susceptor may result in different processing of the substrate at those locations on the susceptor. For example, during a deposition process (e.g., ALD), a difference in the electric field at an edge portion of the susceptor compared to a central portion of the susceptor may result in different material deposition on the substrate adjacent to the edge portion compared to the central portion of the susceptor.

[0039] In various embodiments, the reactor may include one or more regulating circuits to allow the electric field to be adjusted at or around one or more parts of the pedestal in the reactor. The regulating circuit may be coupled to the pedestal. In various embodiments, the regulating circuit may include an electrode and a resonant circuit coupled to the electrode. The electrode of the regulating circuit may be coupled to the pedestal of the reactor and / or be arranged in the pedestal of the reactor. The electrode may be electrically coupled to the resonant circuit, for example, by a lead (e.g., a metal lead), so that current can flow from the electrode to the resonant circuit. The resonant circuit may be grounded.

[0040] In various embodiments, the resonant circuit may include at least one capacitor and / or at least one inductor. The resonant circuit may include a capacitor with a fixed capacitance and / or a capacitor with a variable capacitance. Similarly, the resonant circuit may include an inductor with a fixed inductance and / or an inductor with a variable inductance. Each resonant circuit coupled to the base may include an impedance level derived from the capacitor(s) and the inductor(s). The impedance level of the resonant circuit may be adjustable, for example, by adjusting the capacitance of the capacitor and / or the inductance of the inductor.

[0041] In various embodiments, electrodes of the conditioning circuit can be coupled to or included in the pedestal such that the electrodes occupy, span, and / or are adjacent to a portion of the pedestal (e.g., a portion of the substrate support surface of the pedestal). The reactor can include a plurality of electrodes coupled to or included in the pedestal, wherein the electrodes can span, be disposed on, or be adjacent to different portions of the pedestal and / or different portions of the substrate support surface of the pedestal. The electrodes can span along the same plane (e.g., a plane adjacent to, proximate to, parallel to, and / or adjacent to the substrate support surface of the substrate). The electrodes can be disposed within the pedestal such that the electrodes are approximately 0.1 centimeters (cm) (wherein "approximately" in this context means plus or minus 0.05 cm) from the substrate support surface of the pedestal within the pedestal body along the plane they span.

[0042] The first electrode of the first conditioning circuit can be at or adjacent to an outer (i.e., edge) portion of the pedestal or pedestal substrate supporting surface, and the second electrode of the second conditioning circuit can be at or adjacent to an inner (i.e., central) portion of the pedestal or pedestal substrate supporting surface. As another example, the pedestal or pedestal substrate supporting surface can be divided into quadrants or sections, and the electrodes of the corresponding conditioning circuits can be disposed at or adjacent to each quadrant or section of the pedestal or pedestal substrate supporting surface, or can span along each quadrant or section of the pedestal or pedestal substrate supporting surface. Each electrode can be coupled to a corresponding resonant circuit.

[0043] refer to Figure 2A and Figure 2B The reactor system 100 may include a first conditioning circuit 200A and a second conditioning circuit 200B. The first conditioning circuit 200A may include a first electrode (edge ​​electrode 210) coupled to a first resonant circuit 250A. The edge electrode 210 and the first resonant circuit 250A may be electrically coupled, for example, by a lead 215, such that current can flow between the edge electrode 210 and the first resonant circuit 250A. The edge electrode 210 may be coupled to the pedestal 130 and / or included within the pedestal 130 (i.e., within the pedestal body of the pedestal 130). In various embodiments, the edge electrode may be at least partially enclosed within the body of the pedestal 130 and may be adjacent to, proximate to, abut, or span along the substrate supporting surface (substrate supporting surface 135) of the pedestal. The edge electrode may span along at least a portion of an outer portion of the pedestal. For example, the edge electrode 210 can be disposed at or adjacent to an outer portion of the base 130 and span at least partially along the outer portion of the base 130. As another example, additional reference Figure 3, the edge electrode 310 (an example of the edge electrode 210) can be disposed in an outer portion 333 of the base 330. The outer portion of the base can be a portion that is closer to the outer edge of the base (e.g., closer to the outer edge 132 of the base 130, or the outer edge 332 of the base 330) than the inner or central portion of the base. For example, the outer portion of the base can be a portion that spans along or is adjacent to the outer edge of the base and can be, for example, approximately one-sixth, one-fifth, one-quarter, one-third, half, or more than half of the distance from the outer edge of the base toward the center of the base (i.e., on a circular base, along the radius of the base spanning from the outer edge toward the center of the base).

[0044] An edge electrode (e.g., edge electrode 210 or 310) can be defined by an outer edge (e.g., outer edge 314 of edge electrode 310). The outer edge of the edge electrode can at least partially define a first shape. For example, outer edge 314 of edge electrode 310 defines a circle. As another example, referring to Figure 4 , the outer edge of each of the four edge electrodes 410A-410D (respectively outer edges 414A-414D) partially defines a circle. The shape at least partially defined by the outer edges of the edge electrodes can be any suitable shape (e.g., circular, square, rectangular, oval, hexagonal, etc.).

[0045] In various embodiments, the inner boundary of the edge electrode can be defined by the inner edge of the edge electrode (e.g., inner edge 312 of edge electrode 310). The edge electrode body can span between the inner edge and the outer edge. The inner edge of the edge electrode can at least partially define a second shape. For example, the inner edge 312 of the edge electrode 310 defines a circle. The second shape at least partially defined by the inner edge of the edge electrode can define an edge electrode void. The edge electrode void can be at least partially enclosed by the edge electrode and / or the inner edge of the edge electrode. The edge electrode void can be disposed within a first shape defined by the outer edge of the edge electrode and / or within a second shape defined by the inner edge of the edge electrode. For example, the inner edge 312 of the edge electrode 310 can define an edge electrode void 317, which is enclosed by the edge electrode 310. Similarly, the edge electrode void 317 is disposed within a first shape defined by the outer edge 314 of the edge electrode 310 and / or within a second shape defined by the inner edge 312 of the edge electrode 310. As another example, referring to Figure 4, the inner edges of each of the four edge electrodes 410A-410D (inner edges 412A-412D, respectively) partially define a shape (circular). An edge electrode gap (e.g., edge electrode gap 417) can be at least partially enclosed by each of the edge electrodes 410A-410D and / or each of the inner edges 412A-412D of each of the edge electrodes 410A-410D. Edge electrode gap 417 can be disposed within a shape partially defined by outer edges 414A-414D of edge electrodes 410A-410D and / or within a shape defined by inner edges 412A-412D of edge electrodes 410A-410D. The shape at least partially defined by the inner edges of the edge electrodes can be any suitable shape (e.g., circular, square, rectangular, oval, hexagonal, etc.).

[0046] In various embodiments, the edge electrode body can span any suitable length between an outer edge (e.g., outer edge 314) and an inner edge (e.g., inner edge 312). The edge electrode body can span a length between the outer edge and the inner edge of, for example, about 2 centimeters (cm), 4 cm, 7 cm, or 10 cm (where "about" in this context means plus or minus 1 cm). The length between the outer edge and the inner edge of the edge electrode can be constant (as shown for edge electrode 310) or variable.

[0047] In various embodiments, the outer edge of the edge electrode can be radially outward (relative to a center point of a shape defined by the edge electrode or the shape of the pedestal) from the outer edge of the pedestal (or the outer edge of the substrate supporting surface of the pedestal) such that the outer edge of the edge electrode protrudes further than the shape defined by the outer edge of the pedestal (or the shape defined by the substrate supporting surface of the pedestal). In various embodiments, the outer edge of the edge electrode can be flush with the outer edge of the pedestal (or the substrate supporting surface of the pedestal). In various embodiments, the outer edge (e.g., outer edge 314) of the edge electrode (e.g., edge electrode 310) can be radially inward from the outer edge of the pedestal (pedestal outer edge 332) or the outer edge of the substrate supporting surface of the pedestal such that the outer edge of the pedestal or the outer edge of the substrate supporting surface of the pedestal is disposed radially further outward than the outer edge of the edge electrode.

[0048] In various embodiments, any appropriate number of electrodes may be disposed in or adjacent to or coupled to a portion of the base. That is, one electrode may be coupled to and / or disposed in a portion of the base, spanning or occupying a corresponding portion of the base or base substrate support surface. Another electrode may be similarly coupled to and / or disposed in another appropriate portion of the base, spanning or occupying another corresponding portion of the base or base substrate support surface, which is a different portion occupied by the first electrode. In various embodiments, such electrodes may span along the same plane. For example, the outer portion 333 of the base 330 may be divided into half, one-third, one-quarter, one-fifth, one-sixth, etc., and an edge electrode may be disposed in or adjacent to or coupled to each segment of the outer portion of the base. For example, as Figure 4 As shown, the outer portion of the base can be divided into quarters, and one of the edge electrodes 410A-410D is disposed in each quarter of the base or adjacent to each quarter of the base or coupled to each quarter of the base. The edge electrodes occupying the outer portion of the base or the substrate supporting surface of the base can be disposed equidistant from each other around a central point. In various embodiments, the edge electrodes can be adjacent to each other or they can be spaced apart. In various embodiments, the edge electrodes (e.g., edge electrodes 410A-410C) can be spaced apart from each other by any suitable distance, for example, approximately 0.1 cm, 0.5 cm, 1.0 cm, or 3.0 cm (where "approximately" in this context means plus or minus 0.1 cm). The split electrodes disposed in the outer portion of the base (e.g., edge electrodes 410A-410D) can include any suitable arrangement, such as columns, rows, and / or a grid pattern.

[0049] In various embodiments, the second conditioning circuit 200B can include a second electrode (central electrode 220) coupled to the second resonant circuit 250B. The second electrode of the second conditioning circuit 200B can be disposed in or adjacent to a portion of the pedestal 130 and / or the pedestal support surface 135 that is distinct from the first electrode. The central electrode 220 and the second resonant circuit 250B can be electrically coupled, for example, by a lead 235, such that current can flow between the central electrode 220 and the second resonant circuit 250B. The central electrode 220 can be coupled to the pedestal 130 and / or included within the pedestal 130 (i.e., within the pedestal body of the pedestal 130). In various embodiments, the central electrode can be at least partially enclosed within the body of the pedestal and can be adjacent to, proximate to, adjacent to, or parallel to the substrate support surface (substrate support surface 135) of the pedestal. The central electrode may span along the same plane as the edge electrodes.

[0050] In various embodiments, the central electrode can span along at least a portion of the interior portion of the base. For example, the central electrode 220 can be disposed in or adjacent to the interior portion of the base 130. As another example, additional reference Figure 3 , the central electrode 320 (an example of the central electrode 220) can be disposed in an inner portion 331 of the base 330. The inner portion of the base can be a portion that is closer to the center of the base than the outer portion of the base. For example, the outer portion of the base can be a portion that spans within, or is at least partially enclosed by, an outer portion of the base (e.g., outer portion 333), as discussed herein, and can be about, for example, half, two-thirds, three-quarters, four-fifths, five-sixths, or more of the length from the center of the base to the outer edge of the base (e.g., on a circular base, such a distance would be the radial distance from the center of the base).

[0051] The central electrode (e.g., central electrode 220 or 320) can be defined by an outer edge (e.g., outer edge 334 of central electrode 320). The outer edge of the central electrode can at least partially define a first shape. For example, outer edge 324 of central electrode 320 defines a circle. As another example, referring to Figure 4 , the outer edge of each of the four central electrodes 420A-420D (respectively outer edges 424A-424D) partially defines a circle. The shape at least partially defined by the outer edges of the central electrodes can be any suitable shape (e.g., circular, square, rectangular, oval, hexagonal, etc.).

[0052] Similar to the edge electrodes discussed herein, in various embodiments, any suitable number of electrodes may be disposed in, adjacent to, or coupled to a portion of the base. For example, the inner portion 331 of the base 330 may be divided into halves, thirds, quarters, fifths, sixths, etc., with a central electrode disposed in, adjacent to, or coupled to each segment of the outer portion of the base. For example, Figure 4 As shown, the interior portion of the base can be divided into quarters, and one of the central electrodes 420A-420D is disposed in each quarter of the base or adjacent to each quarter of the base, coupled to each quarter of the base, or spanning along each quarter of the base. The central electrodes occupying the interior portion of the base or the substrate support surface of the base can be disposed equidistantly from each other around a central point. The central electrodes can be adjacent to each other or they can be spaced apart. In various embodiments, the central electrodes (e.g., central electrodes 420A-420C) can be spaced apart from each other by any suitable distance, such as approximately 0.1 cm, 0.5 cm, 1.0 cm, or 3.0 cm (where "approximately" in this context means plus or minus 0.1 cm). The split electrodes (e.g., central electrodes 420A-420D) disposed in the interior portion of the base can include any suitable arrangement, such as columns, rows, and / or a grid pattern.

[0053] In various embodiments, a central electrode (e.g., central electrode 220 or 320) can be at least partially disposed within a shape at least partially defined by an outer edge or inner edge of an edge electrode (e.g., edge electrode 210 or 310). In various embodiments, a central electrode (e.g., central electrode 220 or 320) can be at least partially disposed within an edge electrode gap (e.g., edge electrode gap 317). There can be space between the central electrode and the edge electrodes. For example, referring to Figure 3 , the inner edge 312 of the edge electrode 310 can be spaced apart from the outer edge 324 of the central electrode 320. In various embodiments, the edge electrode can be spaced apart from the central electrode by any suitable distance, for example, about 0.1 cm, 0.5 cm, 1.0 cm, or 3.0 cm (where "about" in this context means plus or minus 0.1 cm). In various embodiments, the central electrode and the edge electrode can be adjacent to each other.

[0054] The electrodes disposed in or coupled to the base may be disposed in any suitable configuration or arrangement. In various embodiments, the shape defined by the inner or outer edges of the edge electrodes may be concentric with the shape defined by the outer edge of the central electrode. For example, Figure 3As shown, the shape defined by the outer edge 314 and inner edge 312 of the edge electrode 310 can be concentric with the shape defined by the outer edge 324 of the center electrode 320. As with the edge electrode 310 and the center electrode 320, the edge electrode and the center electrode can be concentric. In various embodiments, the center electrode can include a void therethrough, similar to the edge electrode void. The center electrode void can be disposed at any suitable location through the center electrode. In various embodiments, there can be more than one electrode disposed radially outward from the center electrode. For example, there can be three or more electrodes disposed radially inward from each other. As another example, the three or more electrodes can define a concentric shape. In various embodiments, the electrodes coupled to and / or disposed in the base can include other arrangements, such as rows, columns, grids, and / or random arrangements of electrodes in one or more portions of the base.

[0055] In various embodiments, each conditioning circuit in the reactor can include a resonant circuit. The resonant circuit can be coupled to one or more electrodes. For example, resonant circuit 250A can be coupled to edge electrode 210 (or edge electrode 310). Similarly, the resonant circuit can be coupled to one or more of edge electrodes 410A-410B, or each of edge electrodes 410A-410B can be coupled to one or more resonant circuits. As another example, resonant circuit 250B can be coupled to center electrode 220 (or center electrode 320). Similarly, the resonant circuit can be coupled to one or more of center electrodes 420A-420B, or each of center electrodes 420A-420B can be coupled to one or more resonant circuits. The resonant circuit can be coupled to the electrodes in the conditioning circuit by leads (e.g., leads 215 or 235), which can include a metal or metal alloy. In various embodiments, the leads coupling the resonant circuit to the electrodes can include a dielectric material along at least a portion of the leads. For example, a lead coupling the resonant circuit to the electrode may include a dielectric material disposed along a portion of the lead adjacent to and / or proximate to the resonant circuit.

[0056] Each resonant circuit in the regulation circuit may include an inductor and / or a capacitor. The inductor may be any suitable inductor. The capacitor may be any suitable capacitor. In various embodiments, the inductor may include any suitable level of inductance, for example, from 1 nanohenry (nH) to 1 microhenry (μH). In various embodiments, the capacitor may include any suitable level of capacitance, for example, from 0.1 picofarad (pF) to 1 microfarad (μF).

[0057] In various embodiments, the resonant circuit in the regulation circuit may include one or more inductors and / or one or more capacitors. The inductor(s) and / or capacitor(s) may be arranged in any suitable arrangement. For example, the inductor(s) and / or capacitor(s) may be connected in series or in parallel with any other inductor(s) and / or capacitor(s). Figure 2A and Figure 2B As shown, resonant circuits 250A and 250B each include an inductor (e.g., inductor 254A in resonant circuit 250A, and inductor 254B in resonant circuit 250B) and a capacitor (e.g., capacitor 252A in resonant circuit 250A, and capacitor 252B in resonant circuit 250B). Additionally, resonant circuits 250A and 250B may each include an additional capacitor (e.g., additional capacitor 256A in resonant circuit 250A, and additional capacitor 256B in resonant circuit 250B). In various embodiments, at least one of the inductor and / or capacitor may be adjustable, thereby allowing the impedance of the resonant circuit to be adjustable. Figure 2A and Figure 2B As shown, additional capacitor 256A in resonant circuit 250A and additional capacitor 256B in resonant circuit 250B are adjustable.

[0058] The resonant circuit of the regulating circuit can be arranged in any suitable position in the reactor or reactor system. Figure 2A and Figure 2B The resonant circuits 250A and 250B in FIG. 2 may be external to the reactor and reaction chamber (e.g., reaction chamber 110). In various embodiments, the resonant circuit may be included in the reactor and / or reaction chamber. Leads (e.g., leads 215 and 235) may connect the resonant circuit to corresponding electrodes included in the reaction chamber and / or the susceptor. In various embodiments, the resonant circuit may be coupled to ground such that the resonant circuit is coupled between the electrodes and ground. For example, as Figure 2A and Figure 2B As shown, resonant circuit 250A may be coupled to ground 257A, and resonant circuit 250B may be coupled to ground 257B.

[0059] During substrate processing (e.g., during atomic layer deposition, chemical vapor deposition (CVD), etc.), as electrons travel from a distribution system (e.g., showerhead 180) to the pedestal, an electric field may be present around the pedestal (e.g., pedestal 130) and the pedestal substrate support surface (e.g., substrate support surface 135). As discussed herein, the electric field around different portions of the pedestal or the pedestal substrate support surface may be different, resulting in different processing results on different portions of the substrate corresponding to different adjacent electric fields. For example, adjacent portions of the substrate and / or outer portions of the pedestal (e.g., Figure 3The electric field in the outer portion 333 of the pedestal 330 in FIG. 34 may be different from the electric field in the inner portion of the adjacent substrate and / or pedestal (e.g., Figure 3 The electric field of the inner portion 331 of the pedestal 330 in the ALD process can be adjusted. Thus, during an ALD process, for example, material deposition on the outer portion of the substrate (adjacent the outer portion of the pedestal) can be different (e.g., greater) than material deposition on the inner portion of the substrate (adjacent the inner portion of the pedestal). To avoid such differences in substrate processing (e.g., material deposition during ALD), the electric field can be adjusted for different portions of the substrate and / or pedestal.

[0060] Additional References Figure 5 , illustrates a method 500 for processing a substrate in a reaction chamber according to various embodiments. It should be understood that embodiments of the present disclosure can be used in a reaction chamber configured for a variety of deposition processes, including but not limited to ALD, CVD, metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and physical vapor deposition (PVD). Embodiments of the present disclosure can also be used in a reaction chamber configured for processing a substrate using reactive precursors, which can also include etching processes such as, for example, reactive ion etching (RIE), inductively coupled plasma etching (ICP), and electron cyclotron resonance etching (ECR).

[0061] In various embodiments, additional reference Figure 2A 、 Figure 2B and Figure 3 , a substrate (e.g., substrate 150) can be placed in a reaction chamber (e.g., reaction chamber 110) (step 502). In various embodiments, substrate 150 can be placed directly on substrate support surface 135 of pedestal 130. In various embodiments, substrate 150 can be placed on lift pins 140 that protrude from substrate support surface 135 of pedestal 130. In such embodiments, lift pins 140 and / or pedestal 130 can be moved relative to one another so that the top ends of the lift pins are flush with or below substrate support surface 135 of pedestal 130, so that substrate 150 is placed directly on and in contact with substrate support surface 135. In various embodiments, the lift pins 140 can receive the substrate 150, the base 130 can move upward while the lift pins 140 remain stationary, so that the lift pins 140 are recessed into the base 130 and the pin holes 137, and the base 130 receives the substrate 150 onto the substrate support surface 135 and positions the base 130 in the processing position 106 in the reaction space 112.

[0062] In order to avoid differences in the electric field adjacent to different parts of the base and substrate, the reactor may include one or more regulating circuits. Each regulating circuit may include one or more electrodes, which may be coupled to the base and / or disposed in the base. Each electrode may span adjacent to a portion of the base and / or base substrate support surface, as discussed herein. Each electrode may be coupled to a resonant circuit included in a corresponding regulating circuit, the resonant circuit having an adjustable impedance, allowing current to pass through the corresponding regulating circuit. Thus, by adjusting the impedance of the resonant circuit (and thereby adjusting the electrode coupled thereto) and the resulting change in the current flowing through the corresponding regulating circuit, the electric field adjacent to the corresponding electrode may be adjusted. For example, as discussed herein with respect to Figure 2A 、 Figure 2B and Figure 3 As discussed, the edge electrode 210 can be coupled to the base 130 and / or disposed in the base 130 at an outer portion of the base 130 (e.g., the outer portion 333 of the base 330), and the central electrode 220 can be coupled to the base 130 and / or disposed in the base 130 at an inner portion of the base 130 (e.g., the outer portion 331 of the base 330).

[0063] In various embodiments, to account for differences in substrate processing between adjacent substrates and different portions of the pedestal, the impedance of a resonant circuit (included in a conditioning circuit) coupled to an electrode coupled to and / or disposed in the pedestal can be adjusted (step 504). Adjusting the impedance of the resonant circuit of the conditioning circuit can adjust the current flowing through the conditioning circuit from the current received in the corresponding electrode. For example, to adjust the impedance of the resonant circuit, the inductance of an inductor included in the resonant circuit can be adjusted, and / or the capacitance of a capacitor included in the resonant circuit can be adjusted. As another example, to adjust the electric field around an outer portion of the pedestal 130 (e.g., outer portion 333 of the pedestal 330), the capacitance of an additional capacitor 256A (which is part of a resonant circuit 250A coupled to an edge electrode 210 that spans at least a portion of the outer portion of the pedestal 130 and / or the substrate support surface 135) can be adjusted. By doing so, the impedance of the resonant circuit 250A and / or the edge electrode 210 can be adjusted, thereby changing the current flowing through the conditioning circuit 200A. As a result, the electric field around the edge electrode 210 (and the electric field around the outer portions of the base 130 and substrate 150) will be adjusted (step 506). Similarly, to adjust the electric field around the inner portion of the base 130 (e.g., the inner portion 331 of the base 330), the capacitance of the additional capacitor 256B (which is part of the resonant circuit 250B coupled to the central electrode 220, which spans at least a portion of the inner portion of the base 130 and / or the substrate support surface 135) can be adjusted. By doing so, the impedance of the resonant circuit 250B and / or the central electrode 220 can be adjusted, thereby changing the current through the regulation circuit 200B. As a result, the electric field around the central electrode 220 (and the electric field around the inner portions of the substrate 150 and base 130) will be adjusted. Additional References Figure 4 , the impedance of the resonant circuit coupled to each of the edge electrodes 410A-410D can be adjusted to adjust the electric field adjacent to the edge electrodes 410A-410D (and adjacent to the outer portions of the substrate 150 and the base 130), and the impedance of the resonant circuit coupled to each of the central electrodes 420A-420D can be adjusted to adjust the electric field adjacent to the central electrodes 420A-420D (and adjacent to the inner portions of the substrate 150 and the base 130).

[0064] The impedance of the resonant circuit can be adjusted to create a desired electric field around different portions of the pedestal and substrate corresponding to the electrode(s) adjacent thereto (e.g., to minimize differences between the electric fields of different portions of the adjacent pedestal and substrate). For example, the impedance of resonant circuits 250A and 250B can be adjusted to minimize differences between the electric field around edge electrode 210 (and around outer portions of substrate 150 and pedestal 130) and the electric field around center electrode 220 (and around inner portions of substrate 150 and pedestal 130).

[0065] In response, desired electric fields are achieved adjacent to the susceptor and various portions of the substrate, and the substrate can be processed (step 508).

[0066] Figures 6A-6D Graphs of the electric field above a wafer (i.e., substrate) are shown while varying the impedance of an inner portion of the pedestal (near the center electrode) and an outer portion of the pedestal (near the edge electrode). As shown in graphs 610, 620, 630, and 640, "Z_C" is the impedance (Ω) of the center electrode and corresponding conditioning circuit (example: conditioning circuit 250B and center electrode 220), and "Z_E" is the impedance (Ω) of the edge electrode and corresponding conditioning circuit (example: conditioning circuit 250A and edge electrode 210). As can be seen, the electric field begins to change at a radial position of approximately 140 mm from the substrate (due to the effect of the impedance of the edge electrode), indicating that the inner portion of the substrate is from a radial position of 0 mm from the substrate to a radial position of approximately 140 mm, and the outer portion of the substrate is from a radial position of 140 mm from the substrate to a radial position of approximately 170 mm. In each of plots 610, 620, 630, and 640, the impedance of the center electrode remains constant (500Ω for plot 610, 100Ω for plot 620, 10Ω for plot 630, and 1Ω for plot 640), while the impedance of the edge electrodes varies (in three steps of 100Ω, 10Ω, and 1Ω in each plot).

[0067] As shown in plots 610, 620, 630, and 640, as the impedance of the center electrode decreases (from 500Ω in plot 610 to 1Ω in plot 640), there is less effect of the electric field between the center electrode and the edge electrodes and outer portions of the substrate. That is, with the relatively low impedance of the center electrode, there is a smaller change (or more predictable change) in the electric field moving from the center electrode to the edge electrode. Thus, the relatively low impedance of the center electrode makes the electric field around the edge electrode easier (and / or more predictable) to control. Accordingly, the edge profile can be controlled without a significant change in the total input power to the resonant circuit coupled to the edge or to the regulation circuit including the edge electrode.

[0068] The impedance of the edge electrodes may comprise any suitable level, for example, from 0 ohms (Ω) to 10 kΩ. The impedance of the central electrode may comprise any suitable level, for example, from 0 ohms (Ω) to 10 kΩ.

[0069] Although exemplary embodiments of the present disclosure are described herein, it should be understood that the present disclosure is not limited thereto. For example, although reactor systems have been described with reference to various specific configurations, the present disclosure is not necessarily limited to these examples. Various modifications, variations, and enhancements may be made to the systems and methods described herein without departing from the spirit and scope of the present disclosure.

[0070] The subject matter of the present disclosure includes all novel and non-obvious combinations and sub-combinations of the various systems, components and configurations, and other features, functions, acts, and / or properties disclosed herein, as well as any and all equivalents thereof.

Claims

1. A base assembly for a reactor system, comprising: a base body defined by a base outer edge, the base body comprising a base outer portion and a base inner portion, wherein the base outer portion is adjacent to the base outer edge and the base inner portion is at least partially enclosed within the base outer portion; a first regulating circuit comprising an edge electrode and a first resonant circuit coupled to the edge electrode, wherein the edge electrode is coupled to the base body; as well as a second conditioning circuit comprising a central electrode and a second resonant circuit coupled to the central electrode, wherein the central electrode is coupled to the base body; wherein the edge electrode is disposed closer to the outer edge of the base than the central electrode; The first regulating circuit is independent of the second regulating circuit. 2 . The susceptor assembly of claim 1 , wherein the first resonant circuit comprises at least one of a first capacitor and a first inductor.

3. The base assembly of claim 2, wherein at least one of the following is true: The first capacitor has a first adjustable capacitance, and The first inductor has a first adjustable inductance.

4. The base assembly of claim 3, wherein the first resonant circuit further comprises a first additional capacitor. 5 . The susceptor assembly of claim 1 , wherein the second resonant circuit comprises at least one of a second capacitor and a second inductor.

6. The base assembly of claim 5, wherein at least one of the following is true: The second capacitor has a second adjustable capacitance, and The second inductor has a second adjustable inductance.

7. The base assembly of claim 6, wherein the second resonant circuit further comprises a second additional capacitor.

8. The susceptor assembly of claim 1, wherein the edge electrode spans along at least a portion of the susceptor exterior portion.

9. The susceptor assembly of claim 8 further comprising a second edge electrode spanning along a second portion of the susceptor outer portion, wherein the second portion of the susceptor outer portion is different from the portion of the susceptor outer portion along which the edge electrode spans, in, At least one of the following is true: The second edge electrode is included in the first adjustment circuit and coupled to the first resonant circuit, or The second edge electrode is included in a third regulation circuit and coupled to a third resonant circuit of the third regulation circuit.

10. The base assembly of claim 8 , wherein the first adjustment circuit further comprises a first lead coupled to the edge electrode and the first resonant circuit and between the edge electrode and the first resonant circuit, and wherein the second adjustment circuit further comprises a second lead coupled to the central electrode and the second resonant circuit and between the central electrode and the second resonant circuit.

11. The susceptor assembly of claim 8, wherein an outer edge of the edge electrode at least partially defines a first shape, wherein an edge electrode void is disposed within the first shape and is at least partially enclosed by the edge electrode.

12. The susceptor assembly of claim 11, wherein the central electrode is defined by a central electrode outer edge and is disposed within and spans at least a portion of the susceptor interior portion.

13. The susceptor assembly of claim 12, wherein the center electrode is at least partially disposed within the edge electrode gap.

14. The susceptor assembly of claim 13 , further comprising a second central electrode disposed at least partially within the edge electrode gap and spanning a second portion of the susceptor interior portion, wherein the second portion of the susceptor interior portion is different from the portion of the susceptor interior portion spanned by the central electrode, in, At least one of the following is true: The second central electrode is included in the second regulation circuit and coupled to the second resonant circuit, or The second central electrode is included in a third regulation circuit and coupled to a third resonant circuit of the third regulation circuit.

15. The susceptor assembly of claim 13, wherein the central electrode outer edge at least partially defines a second shape, and wherein the first shape and the second shape are concentric.

16. A base for a reactor system, comprising: a base body defined by the base outer edge, the base body comprising a base outer portion and a base inner portion, wherein the base outer portion is adjacent to the base outer edge and the base inner portion is within the base outer portion; an edge electrode coupled to the base body; as well as a central electrode coupled to the base body, wherein the edge electrode is disposed closer to the outer edge of the base than the central electrode; The first impedance of the edge electrode and the second impedance of the central electrode are independently adjustable.

17. The susceptor of claim 16, wherein the edge electrode spans along at least a portion of the susceptor exterior portion, defining at least a portion of an edge electrode shape, wherein the edge electrode at least partially encloses an edge electrode gap, The central electrode is defined by a central electrode outer edge, wherein the central electrode is disposed within the base interior portion and at least partially within the edge electrode void.

18. The susceptor of claim 17, wherein the edge electrode shape comprises a first circular shape and the center electrode outer edge comprises a second circular shape.

19. A method comprising: adjusting the impedance of at least one of the first resonant circuit and the second resonant circuit; adjusting a first electric field adjacent to a first electrode coupled to the first resonant circuit in response to adjusting the impedance of the first resonant circuit, wherein the first electrode is coupled to a base; as well as adjusting a second electric field adjacent to a second electrode coupled to the second resonant circuit in response to adjusting the impedance of the second resonant circuit, wherein the second electrode is coupled to the base at a different location than the first electrode; The first resonant circuit is independent of the second resonant circuit.

20. The method of claim 19, wherein the first electrode spans along at least a portion of an outer portion of the base, the outer portion of the base being adjacent to an outer edge of the base, and wherein the second electrode is disposed at an inner portion of the base, wherein the inner portion of the base is within the outer portion of the base.

21. A reactor system comprising the susceptor assembly of any one of the appended claims 1-15 or the susceptor of any one of claims 16-18.

Images