Wiring circuit substrate and method for manufacturing the same

Abstract

The wiring circuit substrate (1) has an alignment mark layer (11). The alignment mark layer (11) has a first alignment mark (41) and a second alignment mark (42). Condition A or Condition B is satisfied. Condition A: The first alignment mark (41) has a first portion (a first origin portion (10) or a first center-of-gravity portion (C1)). The second alignment mark (42) has a second portion (a second origin portion (17) or a second center-of-gravity portion (C2)). Condition B: The first alignment mark (41) has the first portion, but the second alignment mark (42) does not have the second portion, or the first alignment mark (41) does not have the first portion, and the second alignment mark (42) does not have the second portion.

Description

TECHNICAL FIELD

[0001] The present application relates to a wiring circuit substrate and a manufacturing method thereof. BACKGROUND

[0002] Conventionally, a wiring circuit substrate having alignment marks for performing various alignments is known.

[0003] For example, a wiring circuit substrate having a base insulating layer, a conductor mark disposed on an upper surface of the base insulating layer, and a cover insulating layer disposed on the upper surface of the base insulating layer in such a manner as to expose the conductor mark is proposed (see, for example, Patent Document 1).

[0004] In Patent Document 1, the conductor mark is exposed upward from the cover insulating layer, an image recognition camera disposed on an upper side of the wiring circuit substrate acquires an image of the conductor mark, and various alignments are performed.

[0005] PRIOR ART DOCUMENTS

[0006] PATENT DOCUMENTS

[0007] Patent Document 1: Japanese Patent Application Publication No. 2007-258374 SUMMARY

[0008] PROBLEMS TO BE SOLVED BY THE INVENTION

[0009] However, depending on the use and purpose, the wiring circuit substrate is required to further have a second conductor mark exposed downward from the base insulating layer.

[0010] In addition, in recent years, the wiring circuit substrate is required to be thin, and thus, the conductor layer forming the conductor mark and the second conductor mark is required to be thin.

[0011] In addition, the wiring circuit substrate is also required to be small.

[0012] Furthermore, the conductor mark and the second conductor mark are required to have excellent visibility.

[0013] The present application provides a wiring circuit substrate capable of achieving miniaturization and thinness and having first and second alignment marks having excellent visibility, and capable of simultaneously performing alignments using the first and second alignment marks, and a manufacturing method thereof.

[0014] MEANS FOR SOLVING THE PROBLEMS

[0015] The present invention (1) includes a wiring circuit substrate having an alignment mark layer and insulating layers disposed on one side and the other side in the thickness direction of the alignment mark layer, the wiring circuit substrate being characterized in that the alignment mark layer has: a first alignment mark exposed from the insulating layer toward one side in the thickness direction; and a second alignment mark exposed from the insulating layer toward the other side in the thickness direction, the first alignment mark and the second alignment mark satisfying Condition A or Condition B described below,

[0016] Condition A: the first alignment mark has a first portion that is at least one portion selected from a group including a first starting point portion that is a starting point extending in a plurality of directions in an orthogonal direction orthogonal to the thickness direction, and a first center-of-mass portion that is a solid portion continuous in the orthogonal direction,

[0017] the second alignment mark has a second portion that is at least one portion selected from a group including a second starting point portion that is a starting point extending in a plurality of directions in the orthogonal direction, and a second center-of-mass portion that is a solid portion continuous in the orthogonal direction,

[0018] the first portion is offset from the second portion by an offset amount L in plan view, the offset amount L and a maximum length Z of the wiring circuit substrate satisfy the following equation,

[0019] Z / 100000 ≤ L ≤ Z × 2 / 3

[0020] Condition B: the first alignment mark has the first portion, but the second alignment mark does not have the second portion,

[0021] or

[0022] the first alignment mark does not have the first portion, and the second alignment mark does not have the second portion,

[0023] a shortest distance L in plan view of the first alignment mark and the second alignment mark and a maximum length Z of the wiring circuit substrate satisfy the following equation,

[0024] Z / 100000 ≤ L ≤ Z × 2 / 3.

[0025] However, in order to manufacture a wiring circuit substrate, there are cases in which the first alignment mark exposed toward one side in the thickness direction and the second alignment mark exposed toward the other side are cleaned to ensure their visibility by soft etching.

[0026] However, when the first alignment mark and the second alignment mark are subjected to soft etching, the thickness direction position of the first alignment mark slightly moves to the other side and the thickness direction position of the second alignment mark slightly moves to the one side, along with the etching of the alignment mark layer.

[0027] Also, in the case where the first alignment mark has at least one portion, i.e., the first portion, selected from the group including the origin portion that becomes the origin of extension in multiple directions and the center-of-mass portion of the solid portion, when the first alignment mark is subjected to soft etching, the etching liquid easily stagnates, the etching of the alignment mark layer of the first portion increases, and the thickness direction position of the first portion greatly moves to the other side.

[0028] Also, in the case where the second alignment mark has at least one portion, i.e., the second portion, selected from the group including the second origin portion that becomes the origin of extension in multiple directions and the second center-of-mass portion of the solid portion, when the second alignment mark is subjected to soft etching, the etching liquid easily stagnates, the etching of the alignment mark layer of the second portion increases, and the thickness direction position of the second portion greatly moves to the one side.

[0029] Therefore, if the first portion and the second portion overlap when viewed from above, a through-hole is formed by the movement of the thickness direction positions of the first portion and the second portion. This case is more remarkable in the case where the alignment mark layer is thin.

[0030] However, in the wiring circuit substrate, if the first alignment mark and the second alignment mark satisfy the condition A, the first portion is offset from the second portion when viewed from above, and therefore, when the first alignment mark and the second alignment mark are subjected to soft etching, even if the thickness direction position of the first portion moves to the other side and the thickness direction position of the second portion moves to the one side, the formation of a through-hole due to the overlap of the first portion and the second portion can be prevented. Therefore, the visibility of the first alignment mark and the second alignment mark is excellent.

[0031] Meanwhile, since the first portion is offset from the second portion by the offset amount L satisfying the above formula, the wiring circuit substrate can be downsized, and alignment using the first alignment mark and alignment using the second alignment mark can be simultaneously performed.

[0032] Also, if the first alignment mark and the second alignment mark satisfy the condition B, at least the second alignment mark does not have the second portion. Therefore, when the second alignment mark is subjected to soft etching, the stagnation of the etching liquid due to the presence of the second portion can be suppressed. Thus, the formation of the above-mentioned through-hole due to the stagnation of the etching liquid can be prevented. As a result, the visibility of the first alignment mark and the second alignment mark is excellent.

[0033] Meanwhile, since the shortest distance L between the first alignment mark and the second alignment mark in plan view satisfies the above formula, the wiring circuit substrate can be downsized, and alignment using the first alignment mark and alignment using the second alignment mark can be simultaneously performed.

[0034] Thus, the wiring circuit substrate can be downsized and thinned, and has the first alignment mark and the second alignment mark which are excellent in visibility, and alignment using the first alignment mark and the second alignment mark can be simultaneously performed.

[0035] The present application (2) includes the wiring circuit substrate described in (1), wherein the second alignment mark has the same shape or a similar shape as the first alignment mark.

[0036] In the wiring circuit substrate, since the second alignment mark has the same shape or a similar shape as the first alignment mark, the first alignment mark and the second alignment mark are simple in structure.

[0037] The present application (3) includes the wiring circuit substrate described in (1) or (2), wherein the first alignment mark and the second alignment mark satisfy the condition B, the first alignment mark has the first portion, the second alignment mark does not have the second portion, the first portion is offset from the second alignment mark by an offset amount L in plan view, and the offset amount L and the maximum length Z of the wiring circuit substrate satisfy the following formula,

[0038] Z / 100000 ≤ L ≤ Z x 2 / 3.

[0039] In the wiring circuit substrate, since the second alignment mark does not have the second portion, when the second alignment mark is soft-etched, the thickness-direction position of the second alignment mark can be inhibited from moving greatly to the thickness-direction side.

[0040] On the other hand, even if the thickness-direction position of the first portion moves greatly to the other thickness-direction side, since the first portion is offset from the second alignment mark, formation of a through-hole due to overlapping of the first portion and the second alignment mark can also be prevented.

[0041] The present application (4) includes the wiring circuit substrate described in any one of (1) to (3), wherein the first alignment mark and the second alignment mark do not overlap in plan view.

[0042] In the wiring circuit substrate, since the first alignment mark and the second alignment mark do not overlap in plan view, when the first alignment mark and the second alignment mark are soft-etched, formation of a through-hole due to overlapping of the first alignment mark and the second alignment mark can be prevented.

[0043] The invention (5) includes the wiring circuit substrate described in (4), wherein the second alignment mark surrounds the first alignment mark in plan view.

[0044] In the wiring circuit substrate, the second alignment mark surrounds the first alignment mark in plan view, and thus the first alignment mark and the second alignment mark can be arranged compactly. Therefore, the wiring circuit substrate can be downsized.

[0045] The invention (6) includes a manufacturing method of a wiring circuit substrate, which is the manufacturing method of the wiring circuit substrate described in any one of (1) to (5), and has: a step of arranging the alignment mark layer and the insulating layer; a step of exposing the first alignment mark from the insulating layer to one side in the thickness direction; a step of exposing the second alignment mark from the insulating layer to the other side in the thickness direction; and a step of soft-etching the first alignment mark and the second alignment mark.

[0046] Even if the manufacturing method is the step of soft-etching the first alignment mark and the second alignment mark, the etching of the portion of the alignment mark layer corresponding to the first alignment mark and the second alignment mark is performed, the position of the first alignment mark in the thickness direction is moved to the other side, and the position of the second alignment mark in the thickness direction is moved to one side, and thus the formation of the through-hole due to the overlapping described above can be prevented due to the satisfaction of Condition A or Condition B. Therefore, the first alignment mark and the second alignment mark having excellent visibility can be formed.

[0047] In addition, since the manufacturing method is the manufacturing method of the wiring circuit substrate described above, the wiring circuit substrate that can be downsized and thinned, and has the first alignment mark and the second alignment mark having excellent visibility, and alignment using the first alignment mark and the second alignment mark can be performed simultaneously can be manufactured.

[0048] Effects of the Invention

[0049] The manufacturing method of the wiring circuit substrate of the invention and the wiring circuit substrate obtained by the manufacturing method can be downsized and thinned, and have the first alignment mark and the second alignment mark having excellent visibility, and alignment using the first alignment mark and the second alignment mark can be performed simultaneously. BRIEF DESCRIPTION OF DRAWINGS

[0050] [ Figure 1 ] Figure 1 A to D Figure 1 C indicates the first embodiment of the wiring circuit substrate of the invention, Figure 1 A indicates a plan view of the wiring circuit substrate, Figure 1 B indicates Figure 1 An enlarged plan view of the terminal, the first alignment mark, and the second alignment mark shown in A,Figure 1 C represents Figure 1 B is an enlarged bottom view of the first alignment mark and the second alignment mark shown in A.

[0051] [ Figure 2 ] Figure 2 is Figure 1 A ~ Figure 1 C is a sectional view of the wiring circuit substrate shown in A, and is a sectional view along Figure 1 B's X-X line.

[0052] [ Figure 3 ] Figure 3 A ~ Figure 3 D is Figure 2 a manufacturing process diagram of the wiring circuit substrate shown in A, Figure 3 A indicates a process of disposing a conductor layer on a base insulating layer, Figure 3 B indicates a process of disposing a cover insulating layer having a cover opening portion, Figure 3 C indicates a process of forming a base opening portion, Figure 3 D indicates a process of disposing a plating layer.

[0053] [ Figure 4 ] Figure 4 indicates Figure 1 A is a top view of a modification example (a technical solution provided with a plurality of mounting areas) of the wiring circuit substrate shown in A.

[0054] [ Figure 5 ] Figure 5 A ~ Figure 5 C is Figure 1 B ~ Figure 2 a sectional view of the modification example of the wiring circuit substrate shown in A, Figure 5 A indicates a top view of a first alignment mark and a second alignment mark, Figure 5 B indicates a bottom view of the first alignment mark and the second alignment mark, Figure 5 C indicates a sectional view along Figure 5 A's X-X line.

[0055] [ Figure 6 ] Figure 6 indicates Figure 2 a sectional view of the modification example of the wiring circuit substrate shown in A.

[0056] [ Figure 7 ] Figure 7 indicates Figure 1 B is a top view of a modification example of a first alignment mark and a second alignment mark shown in A.

[0057] [ Figure 8 ] Figure 8 indicates Figure 1FIG. 2 is a plan view of a modification of the first alignment mark and the second alignment mark shown in FIG. 1.

[0058] [ Figure 9 ] Figure 9 indicates Figure 1 FIG. 2 is a plan view of a modification of the first alignment mark and the second alignment mark shown in FIG. 1.

[0059] [ Figure 10 ] Figure 10 indicates Figure 1 FIG. 2 is a plan view of a modification of the first alignment mark and the second alignment mark shown in FIG. 1.

[0060] [ Figure 11 ] Figure 11 indicates Figure 8 FIG. 2 is a plan view of a modification of the first alignment mark and the second alignment mark shown in FIG. 1.

[0061] [ Figure 12 ] Figure 12 indicates Figure 9 FIG. 2 is a plan view of a modification of the first alignment mark and the second alignment mark shown in FIG. 1.

[0062] [ Figure 13 ] Figure 13 indicates Figure 10 FIG. 2 is a plan view of a modification of the first alignment mark and the second alignment mark shown in FIG. 1.

[0063] [ Figure 14 ] Figure 14 indicates Figure 1 FIG. 2 is a plan view of a modification of the first alignment mark and the second alignment mark shown in FIG. 1.

[0064] [ Figure 15 ] Figure 15 indicates Figure 14 FIG. 2 is a plan view of a modification of the first alignment mark and the second alignment mark shown in FIG. 1.

[0065] [ Figure 16 ] Figure 16 indicates Figure 1 FIG. 2 is a plan view of a modification of the first alignment mark and the second alignment mark shown in FIG. 1.

[0066] [ Figure 17 ] Figure 17 indicates Figure 16 FIG. 2 is a plan view of a modification of the first alignment mark and the second alignment mark shown in FIG. 1.

[0067] [ Figure 18 ]Figure 18 indicates Figure 16 a plan view of still another modification example of the first alignment mark and the second alignment mark shown in FIG. 1.

[0068] [ Figure 19 ] Figure 19 indicates Figure 16 a plan view of still another modification example of the first alignment mark and the second alignment mark shown in FIG. 1.

[0069] [ Figure 20 ] Figure 20 indicates Figure 16 a plan view of still another modification example of the first alignment mark and the second alignment mark shown in FIG. 1.

[0070] [ Figure 21 ] Figure 21 indicates Figure 16 a plan view of still another modification example of the first alignment mark and the second alignment mark shown in FIG. 1.

[0071] [ Figure 22 ] Figure 22 indicates Figure 16 a plan view of still another modification example of the first alignment mark and the second alignment mark shown in FIG. 1.

[0072] [ Figure 23 ] Figure 23 indicates Figure 1 a plan view of still another modification example of the first alignment mark and the second alignment mark shown in FIG. 1.

[0073] [ Figure 24 ] Figure 24 indicates Figure 23 a plan view of still another modification example of the first alignment mark and the second alignment mark shown in FIG. 1.

[0074] [ Figure 25 ] Figure 25 indicates Figure 1 a plan view of still another modification example of the first alignment mark and the second alignment mark shown in FIG. 1.

[0075] [ Figure 26 ] Figure 26 indicates Figure 25 a plan view of still another modification example of the first alignment mark and the second alignment mark shown in FIG. 1.

[0076] [ Figure 27 ] Figure 27 indicates Figure 25 a plan view of still another modification example of the first alignment mark and the second alignment mark shown in FIG. 1.

[0077] [ Figure 28 ] Figure 28 indicates Figure 26A top view of a further modification of the first and second alignment marks shown in A.

[0078] [ Figure 29 ] Figure 29 A Figure 29 B indicates a first and second alignment mark of the second embodiment, Figure 29 A indicates a top view, Figure 29 B indicates a sectional view.

[0079] [ Figure 30 ] Figure 30 A Figure 30 B is Figure 29 A Figure 29 B indicates a modification of the first and second alignment marks shown in A, Figure 30 A indicates a top view, Figure 30 B indicates a sectional view.

[0080] [ Figure 31 ] Figure 31 A Figure 31 B is Figure 29 A Figure 29 B indicates a modification of the first and second alignment marks shown in A, Figure 31 A indicates a top view, Figure 31 B indicates a sectional view.

[0081] [ Figure 32 ] Figure 32 A Figure 29 A indicates a top view of a further modification of the first and second alignment marks shown in A.

[0082] [ Figure 33 ] Figure 33 A Figure 29 A indicates a top view of a further modification of the first and second alignment marks shown in A.

[0083] [ Figure 34 ] Figure 34 A Figure 29 A indicates a top view of a further modification of the first and second alignment marks shown in A.

[0084] [ Figure 35 ] Figure 35 A Figure 29 A indicates a top view of a further modification of the first and second alignment marks shown in A.

[0085] [ Figure 36 ] Figure 36 A Figure 29 A indicates a top view of a further modification of the first and second alignment marks shown in A.

[0086] [Figure 37 ] Figure 37 A represents Figure 29 A represents A represents

[0087] [ Figure 38 ] Figure 38 A represents Figure 29 A represents A represents

[0088] [ Figure 39 ] Figure 39 A represents Figure 29 A represents A represents

[0089] [ Figure 40 ] Figure 40 A represents Figure 29 A represents A represents

[0090] [ Figure 41 ] Figure 41 A represents Figure 41 A represents Figure 29 A represents Figure 36 A represents Figure 39 A represents Figure 41 A represents Figure 29 A represents Figure 41 A represents Figure 36 A represents Figure 41 A represents Figure 39 A represents A represents

[0091] [ Figure 42 ] Figure 42 A represents Figure 42 A represents Figure 42 A represents Figure 42 A represents A represents

[0092] [ Figure 43 ] Figure 43 A represents Figure 42 A represents A represents

[0093] [ Figure 44 ] Figure 44 A represents Figure 42A shows a plan view of a modification example of the first alignment mark and the second alignment mark.

[0094] [ Figure 45 ] Figure 45 A shows a plan view of a modification example of the first alignment mark and the second alignment mark. Figure 42

[0095] [ Figure 46 ] Figure 46 A shows a plan view of a modification example of the first alignment mark and the second alignment mark. Figure 42

[0096] [ Figure 47 ] Figure 47 A shows a plan view of a modification example of the first alignment mark and the second alignment mark. Figure 42

[0097] [ Figure 48 ] Figure 48 A shows a plan view of a modification example of the first alignment mark and the second alignment mark. Figure 48 B shows a cross-sectional view. Figure 42 A shows a plan view of a modification example of the first alignment mark and the second alignment mark. Figure 42 B shows a cross-sectional view. Figure 48 A shows a plan view, Figure 48 B shows a cross-sectional view. DETAILED DESCRIPTION

[0098] The first embodiment corresponds to a wiring circuit substrate satisfying Condition A of the present application, and the second embodiment to the third embodiment correspond to wiring circuit substrates satisfying Condition B of the present application.

[0099] Further, the first embodiment is a technical solution in which the first alignment mark (described later) has a first portion (described later) and the second alignment mark (described later) has a second portion (described later), the second embodiment is a technical solution in which the first alignment mark has the first portion and the second alignment mark does not have the second portion, and the third embodiment is a technical solution in which the first alignment mark does not have the first portion and the second alignment mark does not have the second portion.

[0100] <First Embodiment>

[0101] The first embodiment of the wiring circuit substrate of the present application will be described with reference to Figure 1 A shows a plan view of a modification example of the first alignment mark and the second alignment mark. Figure 2

[0102] Further, in Figure 1 A, the cover insulating layer 4 (described later) is omitted in order to clearly show the relative arrangement of the first alignment mark 41 and the second alignment mark 42 (described later).

[0103] In addition, in​​​​Figure 1 In B, the peripheral edge of the alignment mark layer 11 and the second alignment mark 42 are not visible in plan view, but they are drawn in broken lines in order to clearly show their relative arrangement with the first alignment mark 41.

[0104] In addition, in Figure 1 In C, the peripheral edge of the alignment mark layer 11 and the first alignment mark 41 are not visible in bottom view, but they are drawn in broken lines in order to clearly show their relative arrangement with the second alignment mark 42.

[0105] In Figure 1 A ~ Figure 2 The wiring circuit substrate 1 has a substantially flat plate shape. Specifically, it has one face and another face which are opposite in the thickness direction, and the one face and the other face extend in a face direction orthogonal to the thickness direction.

[0106] The size of the wiring circuit substrate 1 in plan view is appropriately adjusted according to the size of the electronic component (described later) to be mounted, and specifically, it is adjusted to have a maximum length Z in the face direction described later (more specifically, the maximum length Z and an offset amount L (described later) satisfy the following equation). Specifically, the maximum length Z of the wiring circuit substrate 1 is, for example, 1 mm or more, and preferably 5 mm or more, and on the other hand, for example, 50 mm or less, and preferably 30 mm or less.

[0107] Specifically, the wiring circuit substrate 1 has a substantially rectangular flat plate shape. The wiring circuit substrate 1 has a mounting region 7 in the central portion and a peripheral region 8.

[0108] The mounting region 7 is a region in which an electronic component (not shown) is mounted on one face of the wiring circuit substrate 1, and has a substantially rectangular shape in plan view. The mounting region 7 is provided with one in the wiring circuit substrate 1. A plurality of terminals 9 are provided inside the mounting region 7. The plurality of terminals 9 are arranged adjacent to each other with a space therebetween in the circumferential direction along the peripheral edge of the mounting region 7.

[0109] The peripheral region 8 is a region located at the periphery of the mounting region 7. The alignment mark layer 11 is provided in the peripheral region 8. Furthermore, the first alignment mark 41 and the second alignment mark 42 are divided in the alignment mark layer 11.

[0110] Furthermore, the wiring circuit substrate 1 has, in order toward the thickness direction side, a base insulating layer 2 which is one example of an insulating layer, a conductor layer 3, and a cover insulating layer 4 which is one example of an insulating layer.

[0111] The base insulating layer 2 has the same outer shape as the wiring circuit substrate 1. The base insulating layer 2 has one face and the other face opposite in the thickness direction. Further, the base insulating layer 2 has a base opening portion 5 corresponding to the second alignment mark 42 in the peripheral region 8. The base opening portion 5 is a through-hole that penetrates the base insulating layer 2 in the thickness direction, and exposes the second alignment mark 42.

[0112] As the material of the base insulating layer 2, an insulating resin such as a polyimide resin can be given. The thickness of the base insulating layer 2 is, for example, 0.1 μm or more, preferably 0.5 μm or more, and more preferably 1 μm or more, and, for example, 50 μm or less, preferably 30 μm or less, and more preferably 20 μm or less.

[0113] The conductor layer 3 is disposed on one face of the base insulating layer 2. The conductor layer 3 has terminals 9, wirings (not shown), and an alignment mark layer 11.

[0114] The terminals 9 are disposed on one face of the base insulating layer 2 in the mounting region 7, and are disposed in the above-described pattern.

[0115] The wirings (not shown) are disposed on one face of the base insulating layer 2 in the mounting region 7, and connect the terminals 9 to each other.

[0116] The alignment mark layer 11 is supported by the base insulating layer 2. Specifically, the alignment mark layer 11 is disposed on one face of the base insulating layer 2 in the peripheral region 8. In other words, the base insulating layer 2 is disposed on the other side of the thickness direction of the alignment mark layer 11.

[0117] The alignment mark layer 11 has a substantially rectangular flat plate shape, and specifically, has one face and the other face opposite in the thickness direction. The alignment mark layer 11 is adjusted in size to have regions in which the first alignment mark 41 and the second alignment mark 42 described later are formed.

[0118] The material of the conductor layer 3 is a metal (including an alloy) that allows etching by soft etching described later, and a conductor such as copper can be given.

[0119] The thickness of the conductor layer 3 is very thin, and specifically, for example, 15 μm or less, preferably 10 μm or less, and more preferably 8 μm or less, and, for example, 0.1 μm or more, preferably 0.3 μm or more, and more preferably 0.5 μm or more.

[0120] The cover insulating layer 4 is disposed on one face of the base insulating layer 2 so as to expose the terminals 9 and cover the wirings (not shown).

[0121] The cover insulating layer 4 has a cover opening portion 6 corresponding to the first alignment mark 41 in the peripheral region 8. The cover opening portion 6 is a through-hole that penetrates the cover insulating layer 4 in the thickness direction, and exposes the first alignment mark 41.

[0122] The material of the cover insulating layer 4 is the same as that of the base insulating layer 2. The thickness of the cover insulating layer 4 is, for example, 0.1 μm or more, preferably 0.5 μm or more, more preferably 1 μm or more, and, on the other hand, for example, 50 μm or less, preferably 30 μm or less, more preferably 20 μm or less.

[0123] Next, the first alignment mark 41 and the second alignment mark 42 satisfying the condition A will be described in detail.

[0124] The first alignment mark 41 is a portion of the alignment mark layer 11 exposed from the cover opening portion 6 to one side in one face.

[0125] The first alignment mark 41 has a substantially symbol + (plus) shape (or a cross shape) in plan view. Specifically, the first alignment mark 41 integrally has, as one example of the first portion, a first start portion 10, a first extension 13, a second extension 14, a third extension 15, and a fourth extension 16.

[0126] The first start portion 10 is a portion that is a start point of the first extension 13, the second extension 14, the third extension 15, and the fourth extension 16 extending (elongating) in a plurality of directions.

[0127] The first extension 13 and the second extension 14 each have a slice (strip) shape extending from the first start portion 10 to one side or the other side of a first direction (one example of a part of the plurality of directions) included in the face direction (the left-right direction in Figure 1 A and Figure 1 B). More specifically, the first extension 13 and the second extension 14 have a substantially straight line shape extending from the first start portion 10 to one side opposite to the other. The first extension 13 and the second extension 14 are located on a first imaginary line IL1 passing through the first start portion 10.

[0128] The third extension 15 and the fourth extension 16 each have a slice (strip) shape extending from the first start portion 10 to one side or the other side of a second direction (one example of a part of the plurality of directions) included in the face direction and orthogonal to the first direction and the thickness direction (the up-down direction in Figure 1 A and Figure 1 B). More specifically, the third extension 15 and the fourth extension 16 have a substantially straight line shape extending from the first start portion 10 to one side opposite to the other. The third extension 15 and the fourth extension 16 are located on a second imaginary line IL2 passing through the first start portion 10. The second imaginary line IL2 is orthogonal to the first imaginary line IL1.

[0129] Further, a peripheral portion of the first alignment mark 41 on the one side of the alignment mark layer 11 is covered by the cover insulating layer 4.

[0130] The second alignment mark 42 is a portion of the alignment mark layer 11 exposed to the other side from the base opening portion 5 in the other side.

[0131] The second alignment mark 42 has a planar shape similar to that of the first alignment mark 41. Specifically, the second alignment mark 42 has a substantially symbol + (plus) shape (or a cross shape) when viewed from above. The second alignment mark 42 has a smaller shape than the first alignment mark 41 when viewed from above.

[0132] In detail, the second alignment mark 42 integrally has, as one example of the second portion, a second starting point portion 17, a fifth extending portion 18, a sixth extending portion 19, a seventh extending portion 20, and an eighth extending portion 21.

[0133] The second starting point portion 17 is a portion that is a starting point of the fifth extending portion 18, the sixth extending portion 19, the seventh extending portion 20, and the eighth extending portion 21 extending (elongating) in a plurality of directions.

[0134] The fifth extending portion 18 and the sixth extending portion 19 each have a slice (strip) shape extending from the second starting point portion 17 toward one side or the other side of the first direction. More specifically, the fifth extending portion 18 and the sixth extending portion 19 have substantially straight line shapes extending from the second starting point portion 17 toward opposite sides of each other. The fifth extending portion 18 and the sixth extending portion 19 are located on a third imaginary line IL3 passing through the second starting point portion 17. The third imaginary line IL3 is parallel to the first imaginary line IL1.

[0135] The seventh extending portion 20 and the eighth extending portion 21 each have a slice (strip) shape extending from the second starting point portion 17 toward one side or the other side of the second direction. More specifically, the seventh extending portion 20 and the eighth extending portion 21 have substantially straight line shapes extending from the second starting point portion 17 toward opposite sides of each other. The seventh extending portion 20 and the eighth extending portion 21 are located on a fourth imaginary line IL4 passing through the second starting point portion 17. The fourth imaginary line IL4 is parallel to the second imaginary line IL2.

[0136] Further, a peripheral portion of the second alignment mark 42 on the other side of the alignment mark layer 11 is covered by the base insulating layer 2.

[0137] Further, in the wiring circuit substrate 1, the first starting point portion 10 is not overlapped with the second starting point portion 17 when viewed from above, but is arranged deviated with respect to the second starting point portion 17.

[0138] Further, the first start portion 10 is not overlapped with any one of the second start portion 17, the fifth extension portion 18, the sixth extension portion 19, and the seventh extension portion 20 in plan view, but is arranged deviated therefrom.

[0139] Further, the second start portion 17 is not overlapped with any one of the first extension portion 13, the second extension portion 14, the third extension portion 15, and the fourth extension portion 16 in plan view, but is arranged deviated therefrom.

[0140] That is, the first alignment mark 41 and the second alignment mark 42 are not overlapped with each other in plan view, but are arranged deviated therefrom. The first alignment mark 41 and the second alignment mark 42 are arranged with a space therebetween in plan view.

[0141] The deviated amount (length) L of the first start portion 10 from the second start portion 17 in plan view is the shortest distance L between the first start portion 10 and the second start portion 17 in plan view, which satisfies the following equation together with the maximum length Z of the wiring circuit substrate 1.

[0142] Z / 100000 ≤ L ≤ Z x 2 / 3

[0143] If the deviated amount L exceeds [Z x 2 / 3] described above, alignment using the first alignment mark 41 and alignment using the second alignment mark 42 cannot be performed at the same time, and further, it is necessary to arrange the first alignment mark 41 and the second alignment mark 42 more widely in the peripheral region 8, and thus, miniaturization of the wiring circuit substrate 1 cannot be achieved.

[0144] On the other hand, if the deviated amount L is less than [Z / 100000] described above, formation of the through-hole due to soft etching (cleaning) to be described later cannot be more reliably suppressed.

[0145] The upper limit of the deviated amount L is preferably [Z x 1 / 2], more preferably [Z x 1 / 3], and further preferably [Z x 1 / 4].

[0146] Further, the lower limit of the deviated amount L is preferably [Z / 10000], more preferably [Z / 5000], and further preferably [Z / 3000].

[0147] Specifically, the deviated amount L is, for example, 10 mm or less, preferably 7.5 mm or less, more preferably 5 mm or less, and further preferably 3 mm or less, and further, for example, 0.05 mm or more, preferably 0.03 mm or more, and more preferably 0.1 mm or more.

[0148] The sizes of the first alignment mark 41 and the second alignment mark 42 are appropriately set according to the use and purpose of the wiring circuit substrate 1. Specifically, the planar area of the first start portion 10 is, for example, 10 μm 2The above is preferably 100 μm 2 The above is, for example, 10000000 μm 2 The above is preferably 100000 μm 2 The above. The extension length of each of the first extension portion 13, the second extension portion 14, the third extension portion 15, and the fourth extension portion 16 is, for example, 0.01 mm or more, preferably 0.03 mm or more, more preferably 0.05 mm or more, and, for example, 10 mm or less, preferably 3 mm or less, more preferably 1 mm or less.

[0149] The ratio of the planar area of the second starting point portion 17 to the planar area of the first starting point portion 10 is, for example, 1 or less, preferably 0.9 or less, more preferably 0.75 or less, and, for example, 0.1 or more, preferably 0.3 or more.

[0150] The length of each of the first extension portion 13, the second extension portion 14, the third extension portion 15, and the fourth extension portion 16 is longer than the length of each of the fifth extension portion 18, the sixth extension portion 19, the seventh extension portion 20, and the eighth extension portion 21.

[0151] The ratio of the extension length of the first extension portion 13 to the extension length of the fifth extension portion 18 is, for example, more than 1, preferably 1.1 or more, more preferably 1.2 or more, and, for example, 10 or less. The ratio of the extension length of the second extension portion 14 to the extension length of the sixth extension portion 19, the ratio of the extension length of the third extension portion 15 to the extension length of the seventh extension portion 20, and the ratio of the extension length of the fourth extension portion 16 to the extension length of the eighth extension portion 21 are the same as the ratio of the extension length of the first extension portion 13 to the extension length of the fifth extension portion 18.

[0152] Next, the method of manufacturing the wiring circuit substrate 1 will be described with reference to Figure 3 A ~ Figure 3 C.

[0153] As shown in Figure 3 A, first, in the method, the base insulating layer 2 is prepared, and then the conductor layer 3 is disposed on one face of the base insulating layer 2.

[0154] The base insulating layer 2 is prepared, for example, in a substantially sheet shape extending in the planar direction, and does not yet have the above-described base opening portion 5 (refer to Figure 3 C).

[0155] The conductor layer 3 is formed, for example, by an additive method, a subtractive method, or the like, on one face of the base insulating layer 2 to have a pattern of a wiring (not shown), the terminal 9, and the alignment mark layer 11.

[0156] As shown in Figure 3As shown in FIG. 1B, then, in this method, the cover insulating layer 4 is formed on one face of the base insulating layer 2 in a pattern that covers the opening portion 6.

[0157] As a result, the first alignment mark 41 exposed from the cover opening portion 6 is formed (divided) on one face of the alignment mark layer 11.

[0158] As shown in FIG. 1C, then, in this method, the base opening portion 5 is formed in the base insulating layer 2. Figure 3

[0159] In order to form the base opening portion 5 in the base insulating layer 2, etching, laser, or the like is used, for example.

[0160] As a result, the second alignment mark 42 exposed from the base opening portion 5 is formed (divided) on the other face of the alignment mark layer 11.

[0161] Then, the first alignment mark 41 and the second alignment mark 42 are cleaned.

[0162] Specifically, the first alignment mark 41 and the second alignment mark 42 are cleaned by soft etching, for example.

[0163] In the soft etching, conditions (kind of etching liquid, time, temperature, and the like) are selected in which, along with the etching of the alignment mark layer 11, the thickness direction position of the first alignment mark 41 moves slightly to the other side in the thickness direction and the thickness direction position of the second alignment mark 42 moves slightly to the one side in the thickness direction.

[0164] In the soft etching of the first alignment mark 41, the etching liquid easily flows from the first to fourth extension portions 13 to 16 toward the first starting point portion 10, and thus the etching liquid stagnates in the first starting point portion 10. Therefore, the speed at which the thickness direction position of the first starting point portion 10 moves to the other side in the thickness direction is faster than the speed at which the thickness direction positions of the first to fourth extension portions 13 to 16 move to the other side in the thickness direction.

[0165] In the soft etching of the second alignment mark 42, the etching liquid easily flows from the fifth to eighth extension portions 18 to 21 toward the second starting point portion 17, and thus the etching liquid stagnates in the second starting point portion 17. Therefore, the speed at which the thickness direction position of the second starting point portion 17 moves to the one side in the thickness direction is faster than the speed at which the thickness direction positions of the fifth to eighth extension portions 18 to 21 move to the one side in the thickness direction.

[0166] On the other hand, in the alignment mark layer 11, the other face opposite the first alignment mark 41 is covered (masked) by the base insulating layer 2, and thus movement of the thickness direction position of the other face does not occur due to the soft etching described above.

[0167] ​In addition, in the alignment mark layer 11, the side opposite to the second alignment mark 42 is covered (masked) by the cover insulating layer 4, and thus, the movement of the thickness direction position of one side due to the soft etching described above does not occur.

[0168] Thus, the wiring circuit board 1 having the base insulating layer 2, the conductor layer 3, and the cover insulating layer 4 is obtained.

[0169] Then, as shown in FIG. 1, the alignment of the electronic component (not shown) and the wiring circuit board 1 is performed using the first image recognition camera 31 disposed on one side in the thickness direction of the wiring circuit board 1 and the second image recognition camera 32 disposed on the other side in the thickness direction of the wiring circuit board 1. Figure 2

[0170] In the alignment, the first image recognition camera 31 recognizes the first alignment mark 41, and the second image recognition camera 32 recognizes the second alignment mark 42.

[0171] Furthermore, in the wiring circuit board 1, the first alignment mark 41 and the second alignment mark 42 satisfy the condition A, and the first starting point portion 10 is offset with respect to the second starting point portion 17 in plan view. Thus, when the first alignment mark 41 and the second alignment mark 42 are subjected to the soft etching, even if the thickness direction position of the first starting point portion 10 moves to the other side and the thickness direction position of the second starting point portion 17 moves to one side, the formation of the through hole due to the overlap of the first starting point portion 10 and the second starting point portion 17 can be prevented. Thus, the visibility of the first alignment mark 41 and the second alignment mark 42 is excellent.

[0172] Meanwhile, since the first starting point portion 10 is offset with respect to the second starting point portion 17 by the offset amount L satisfying the above formula, the wiring circuit board 1 can be downsized, and the alignment using the first alignment mark 41 and the alignment using the second alignment mark 42 can be simultaneously performed.

[0173] Thus, the wiring circuit board 1 can be downsized and thinned, and has the first alignment mark 41 and the second alignment mark 42 with excellent visibility, and the alignment using the first alignment mark 41 and the second alignment mark 42 can be simultaneously performed.

[0174] In addition, in the wiring circuit board 1, the second alignment mark 42 has a similar shape to the first alignment mark 41, and thus, the structure of the first alignment mark 41 and the second alignment mark 42 is simple.

[0175] ​Further, in the wiring circuit substrate 1, even if the thickness direction position of the first alignment mark 41 is moved to the other side and the thickness direction position of the second alignment mark 42 is moved to the one side by soft etching, since the first alignment mark 41 and the second alignment mark 42 do not overlap each other in plan view, the formation of the through hole due to the overlap of the first alignment mark 41 and the second alignment mark 42 can be prevented.

[0176] Further, even if the manufacturing method of the wiring circuit substrate 1 described above moves the thickness direction position of the first alignment mark 41 to the other side and moves the thickness direction position of the second alignment mark 42 to the one side by etching the portion of the alignment mark layer 11 corresponding to the first alignment mark 41 and the second alignment mark 42 in the process of soft etching the first alignment mark 41 and the second alignment mark 42, since the first alignment mark 41 and the second alignment mark 42 satisfy the condition A, the formation of the through hole due to the overlap described above can be prevented. Thus, the first alignment mark 41 and the second alignment mark 42 having excellent visibility can be formed.

[0177] Further, since the manufacturing method of the wiring circuit substrate 1 is a method of manufacturing the wiring circuit substrate 1 described above, the wiring circuit substrate 1 capable of achieving miniaturization and thinning and having the first alignment mark 41 and the second alignment mark 42 having excellent visibility, which can be used for alignment at the same time, can be manufactured.

[0178] <Modification Examples>

[0179] In each of the following modification examples, the same reference numerals are assigned to the same members and processes as those of the first embodiment described above, and detailed description thereof is omitted. Further, each of the modification examples can have the same effects as the first embodiment except for the specifically described contents. Furthermore, the first embodiment and the modification examples can be appropriately combined.

[0180] As shown in FIG. 1A, the wiring circuit substrate 1 has one mounting region 7. Figure 1 A

[0181] However, the number of the mounting regions 7 in the wiring circuit substrate 1 is not limited to the above, and can be plural.

[0182] As shown in FIG. 1A, the wiring circuit substrate 1 has one mounting region 7. Figure 4 In this modification example, the mounting regions 7 are arranged, for example, nine in the wiring circuit substrate 1. Specifically, three rows are arranged in the first direction, and three rows are arranged in the second direction, and the total of nine mounting regions 7 are arranged side by side with intervals therebetween.

[0183] The wiring circuit substrate 1 having the plurality of mounting regions 7 can be manufactured by the manufacturing method of the wiring circuit substrate 1 described above.Figure 1 A) The maximum length Z in the plane direction is longer. For example, it is 10 mm or more, preferably 25 mm or more, and, for example, it is 1000 mm or less, and there is no particular limitation.

[0184] Furthermore, in the wiring circuit substrate 1, the amount of deviation L of the maximum length Z of the wiring circuit substrate 1 from the first starting point portion 10 and the second starting point portion 17 also satisfies the following equation when viewed from the top.

[0185] Z / 100000 ≤ L ≤ Z x 2 / 3

[0186] As shown in FIG. 1, the first alignment mark 41 is provided in a one-to-one corresponding manner with respect to the mounting region 7. However, one can be provided with respect to a plurality of mounting regions 7 (i.e., one wiring circuit substrate 1), and this is not shown. The same applies to the second alignment mark 42. Figure 4

[0187] In the first embodiment, the second alignment mark 42 is smaller than the first alignment mark 41 when viewed from the top, but the size relationship can be reversed.

[0188] As shown by the imaginary line of FIG. 2A and D, the wiring circuit substrate 1 can also have a plating layer 25. The plating layer 25 is provided to the first alignment mark 41 and the second alignment mark 42. As the material of the plating layer 25, for example, gold, nickel, or the like can be given. Figure 2 Figure 3 In order to provide the plating layer 25, as shown by FIG. 2A and D, the first alignment mark 41 and the second alignment mark 42 after cleaning are plated (e.g., electroplated, etc.). Furthermore, the plating layer 25 can also be a plurality of layers in which a plurality of plating is performed.

[0189] Furthermore, in the case where the wiring circuit substrate 1 has the plating layer 25, the portion of the plating layer 25 corresponding to the first alignment mark 41 is recognized by the first image recognition camera 31, and, furthermore, the portion of the plating layer 25 corresponding to the second alignment mark 42 is recognized by the second image recognition camera 32. Figure 3 Furthermore, in the case where the wiring circuit substrate 1 has the plating layer 25, the portion of the plating layer 25 corresponding to the first alignment mark 41 is recognized by the first image recognition camera 31, and, furthermore, the portion of the plating layer 25 corresponding to the second alignment mark 42 is recognized by the second image recognition camera 32.

[0190] Furthermore, in the first embodiment, as shown by FIG. 1A to C, the conductor layer 3 is provided before the base opening portion 5 is formed, but it is also possible to first form the base opening portion 5 in the base insulating layer 2, and then provide the conductor layer 3 to the base insulating layer 2, and this is not shown. For example, a base insulating layer 2 in which the base opening portion 5 is formed in advance is prepared, and then the conductor layer 3 is layered (formed) to one face of the base insulating layer 2 using a subtractive method.

[0191] Figure 3 Figure 3

[0192] In the first embodiment, as shown by FIG. 1A to C, the conductor layer 3 is provided before the base opening portion 5 is formed, but it is also possible to first form the base opening portion 5 in the base insulating layer 2, and then provide the conductor layer 3 to the base insulating layer 2, and this is not shown. For example, a base insulating layer 2 in which the base opening portion 5 is formed in advance is prepared, and then the conductor layer 3 is layered (formed) to one face of the base insulating layer 2 using a subtractive method. Figure 2 ​​​​​As shown, the first alignment mark 41 and the second alignment mark 42 are provided with respect to the common alignment mark layer 11. However, as shown in Figure 5 A Figure 5 C, the first alignment mark 41 and the second alignment mark 42 are provided in different alignment mark layers.

[0193] As shown in Figure 5 A Figure 5 C, the first alignment mark 41 is divided in the alignment mark layer 11, and the second alignment mark 42 is divided in the second alignment mark layer 12.

[0194] The first alignment mark 41 is exposed on one side from the covering opening portion 6 in the alignment mark layer 11.

[0195] The second alignment mark 42 is exposed on the other side from the base opening portion 5 in the second alignment mark layer 12 which is independently provided with respect to the alignment mark layer 11.

[0196] In this modification, as shown in Figure 5 A, the alignment mark layer 11 contains the first alignment mark 41 in plan view, and has a shape larger than the first alignment mark 41 and similar to the first alignment mark 41. Specifically, the alignment mark layer 11 has a shape larger than the first alignment mark 41 and in plan view, is in the shape of a substantially symbol + (plus sign) (or a cross shape). One side of the peripheral end portion of the alignment mark layer 11 is covered by the covering insulating layer 4.

[0197] The second alignment mark layer 12 is arranged with a space in the surface direction from the alignment mark layer 11 on one side of the base insulating layer 2. The second alignment mark layer 12 contains the second alignment mark 42 in plan view, and has a shape larger than the second alignment mark 42 and similar to the second alignment mark 42. Specifically, the second alignment mark layer 12 has a shape larger than the second alignment mark 42 and in plan view, is in the shape of a substantially symbol + (plus sign) (or a cross shape). The other side of the peripheral end portion of the second alignment mark layer 12 is covered by the base insulating layer 2.

[0198] As shown in Figure 6 , the alignment mark layer 11 can also have a filling portion 23 filled in the base opening portion 5 of the base insulating layer 2. The other side of the filling portion 23 is one example of the second alignment mark 42, and is flush with the other side of the base insulating layer 2.

[0199] In addition, the second alignment mark 42 can also have the same plan view shape as the first alignment mark 41, for which a drawing is not shown.

[0200] As shown in Figure 7 , the first alignment mark 41 and the second alignment mark 42 can each have a shape in plan view of a substantially letter L.

[0201] Specifically, Figure 7 The first alignment mark 41 shown does not have Figure 1 The second extension 14 and the fourth extension 16 shown in B, but has the first starting portion 10, the first extension 13, and the third extension 15.

[0202] Figure 7 The second alignment mark 42 shown does not have Figure 1 B to Figure 1 The sixth extension 19 and the eighth extension 21 shown in C, but has the second starting portion 17, the fifth extension 18, and the seventh extension 20.

[0203] In Figure 1 In the first embodiment shown in B, the second alignment mark 42 does not overlap the first alignment mark 41 when viewed from above, but in Figures 8-10 In the modification example shown in C, the second alignment mark 42 is allowed to partially overlap the first alignment mark 41.

[0204] However, it is necessary to arrange the first starting portion 10 and the second starting portion 17 to be offset when viewed from above.

[0205] In Figure 8 In the modification example shown in C, the free end of the first extension 13 of the first alignment mark 41 and the free end of the sixth extension 19 of the second alignment mark 42 overlap when viewed from above.

[0206] In this modification example, the first alignment mark 41 and the second alignment mark 42 do not overlap when viewed from above, as in the first embodiment shown in B. Figure 1 Compared to the wiring circuit substrate 1 shown in B, the first alignment mark 41 and the second alignment mark 42 can be arranged compactly.

[0207] In Figure 8 In the modification example shown in C, one extension of the first alignment mark 41 and one extension of the second alignment mark 42 overlap when viewed from above, but in Figure 9 In the modification example shown in C, two extensions of the first alignment mark 41 and two extensions of the second alignment mark 42 overlap.

[0208] Specifically, as shown in Figure 9 The first extension 13 and the fourth extension 16 of the first alignment mark 41 overlap the seventh extension 20 and the sixth extension 19 of the second alignment mark 42, respectively.

[0209] As shown in Figure 9 Specifically, in this modification example, the first extension 13 and the seventh extension 20 cross (are orthogonal) and the fourth extension 16 and the sixth extension 19 cross (are orthogonal) when viewed from above.

[0210] Further, in Figure 9 In the modification shown in FIG. 9, the first start portion 10 does not overlap the second alignment mark 42, and the second start portion 17 does not overlap the first alignment mark 41 in plan view.

[0211] In Figure 9 In the modification shown in FIG. 9, the first alignment mark 41 and the second alignment mark 42 can be arranged more compactly than in the modification shown in FIG. 8 in which one extension of the first alignment mark 41 and one extension of the second alignment mark 42 overlap in plan view. Figure 8

[0212] In Figure 10 In the modification shown in FIG. 9, the top end portion (free end portion) of the first extension 13 overlaps the second start portion 17 in plan view.

[0213] On the other hand, the first start portion 10 is arranged offset with respect to the second alignment mark 42 in plan view. That is, the first start portion 10 does not overlap the second start portion 17.

[0214] In Figure 10 In the modification shown in FIG. 9, the second start portion 17 overlaps the first alignment mark 41 in plan view, and thus, the first alignment mark 41 and the second alignment mark 42 can be arranged more compactly than in the modification shown in FIG. 7 in which the second start portion 17 is arranged offset with respect to the first alignment mark 41. Figure 9

[0215] Another modification in which the shapes of the first alignment mark 41 and the second alignment mark 42 in the modification shown in FIG. 8 are changed to substantially L-shaped in plan view is shown in FIG. 10. Figure 11 The modification shown in FIG. 10 can have the same effects as the modification shown in FIG. 8. Figure 8 Figure 11 Another modification in which the shapes of the first alignment mark 41 and the second alignment mark 42 in the modification shown in FIG. 8 are changed to substantially L-shaped in plan view is shown in FIG. 10. Figure 8 The modification shown in FIG. 10 can have the same effects as the modification shown in FIG. 8.

[0216] Figure 12 Another modification in which the shapes of the first alignment mark 41 and the second alignment mark 42 in the modification shown in FIG. 8 are changed to substantially L-shaped in plan view is shown in FIG. 10. Figure 9 The modification shown in FIG. 10 can have the same effects as the modification shown in FIG. 8. Figure 12 Figure 9 Another modification in which the shapes of the first alignment mark 41 and the second alignment mark 42 in the modification shown in FIG. 8 are changed to substantially L-shaped in plan view is shown in FIG. 10.

[0217] The modification shown in FIG. 10 can have the same effects as the modification shown in FIG. 8. Figure 13 Figure 10 ​​​The shape of the first alignment mark 41 and the second alignment mark 42 in the illustrated modification example is changed to another modification example in which the shape is substantially L-shaped when viewed from above. Figure 13 The illustrated modification example can function as the same effects as the Figure 10 illustrated modification example.

[0218] In addition, as Figure 14 illustrated, the second alignment mark 42 can also have a plurality of (four) second starting point portions 17.

[0219] Specifically, the second alignment mark 42 has a frame shape that is substantially rectangular when viewed from above, and surrounds the first alignment mark 41 on the outer side of the first alignment mark 41. The second alignment mark 42 has four corners 24. The four corners 24 correspond to the second starting point portion 17 as one example of the second portion. In this modification example, the first alignment mark 41 and the second alignment mark 42 are offset and do not overlap when viewed from above.

[0220] The number of the second starting point portions 17 is not limited to the above, as Figure 15 illustrated, it can also be twelve.

[0221] In Figure 15 the illustrated modification example, the second alignment mark 42 has a ring frame shape that is configured on the outer side of the shape of the first alignment mark 41 in a substantially symbol + shape when viewed from above, in a manner of surrounding the first alignment mark 41. The second alignment mark 42 has a shape along (corresponding to) the outer edge of the first alignment mark 41. The second alignment mark 42 has a frame shape when viewed from above that is similar to the outer edge of the first alignment mark 41. Specifically, the second alignment mark 42 integrally has four Japanese Kana Ko-shaped members 36 that have a shape of a Japanese Kana Ko when viewed from above, with the inside open. Each Japanese Kana Ko-shaped member 36 is provided with three corners 24. Therefore, this second alignment mark 42 has 3 x 4 = 12 corners 24.

[0222] As Figure 16 illustrated, the first alignment mark 41 can also have a center of gravity portion C1 of the solid portion 30 instead of the first starting point portion 10 as the first portion.

[0223] The solid portion 30 is a solid pattern in the planar direction, and an area on the inner side of the outer edge of the solid portion 30 does not have an opening such as a through hole when viewed from above. Specifically, the solid portion 30 has a substantially rectangular shape when viewed from above.

[0224] The first center of gravity portion C1 is present in (included in) the solid portion 30. Furthermore, although the solid portion 30 has a "center of gravity", when projected in the thickness direction, the "center of gravity" is present in (included in) the solid portion 30 as a center of gravity portion (specifically, the first center of gravity portion C1) when the "center of gravity" overlaps the solid portion 30.

[0225] As for the first center portion C1, when the first alignment mark 41 is subjected to soft etching, in the first alignment mark 41, the etching solution is likely to stay in the first center portion C1 compared to the surrounding portion of the first center portion C1, and thus the thickness direction position of the first center portion C1 moves to the other side in the thickness direction at a faster speed than the thickness direction position of the surrounding portion thereof.

[0226] The planar area of the solid portion 30 is, for example, 0.001 mm 2 The above is preferably 0.005 mm 2 The above is more preferably 0.01 mm 2 The above is, for example, 100 mm 2 The above is preferably 50 mm 2 The above is more preferably 30 mm 2 The above.

[0227] The first center portion C1 of the wiring circuit substrate 1 is offset from the corner portion 24 in plan view, and satisfies the condition A. Thus, when the first alignment mark 41 and the second alignment mark 42 are subjected to soft etching, even if the thickness direction position of the first center portion C1 moves to the other side and the thickness direction position of the corner portion 24 moves to the one side, the formation of the through-hole due to the overlap of the first center portion C1 and the corner portion 24 can be prevented. Thus, the visibility of the first alignment mark 41 and the second alignment mark 42 is excellent.

[0228] Further, in the wiring circuit substrate 1, the first alignment mark 41 has the first center portion C1 of the solid portion 30, and the second alignment mark 42 surrounds the first alignment mark 41 in plan view, and thus the first alignment mark 41 and the second alignment mark 42 can be arranged compactly in the peripheral region 8 in plan view. Thus, the miniaturization of the wiring circuit substrate 1 can be sought.

[0229] In Figure 16 In the modification shown in FIG. 10, the first alignment mark 41 is surrounded by the second alignment mark 42, but it can be, for example, as shown in FIG. 11, the first alignment mark 41 is not surrounded by the second alignment mark 42, but is arranged outside the second alignment mark 42. Figure 17

[0230] As shown in FIG. 12, the first alignment mark 41 can overlap the line segment portion 37 of the second alignment mark 42. Figures 18-20

[0231] The line segment portion 37 has four in the second alignment mark 42, and each line segment portion 37 links two corner portions 24. One of the four line segment portions 37 overlaps the first alignment mark 41.

[0232] In​​Figure 18 In the modification shown, the first center-of-gravity portion C1 is disposed offset outward with respect to the linear portion 37.

[0233] In Figure 19 In the modification shown, the first center-of-gravity portion C1 overlaps the linear portion 37. However, the first center-of-gravity portion C1 is disposed offset with respect to the corner portion 24 (second starting point portion 17) disposed at both ends of the linear portion 37.

[0234] In Figure 20 In the modification shown, the first center-of-gravity portion C1 is disposed offset inward with respect to the linear portion 37.

[0235] In Figures 18-20 In the modification shown, from the viewpoint of compactly disposing the first alignment mark 41 and the second alignment mark 42, it is preferable that Figure 19 and Figure 20 In the modification shown, it is more preferable that Figure 20 In the modification shown.

[0236] On the other hand, in Figures 18-20 In the modification shown, from the viewpoint of preventing a through-hole in the first center-of-gravity portion C1, it is preferable that Figure 18 and Figure 20 In the modification shown.

[0237] Further, the shape of the first alignment mark 41 is not particularly limited as long as it contains the first center-of-gravity portion C1, and for example, it can be a shape that is substantially polygonal (other than rectangular) when viewed from above, such as a triangular shape, a pentagonal shape, a hexagonal shape, for which no illustration is shown, and for example, as shown in Figure 21 it can be a shape that is substantially circular when viewed from above.

[0238] Further, in Figures 15-21 In the modification shown, the second alignment mark 42 has a ring shape, but as shown in Figure 22 it can also have a non-ring shape.

[0239] The second alignment mark 42 has one Japanese Kana "コ" shaped member 36, and has two corner portions 24 (second starting point portions 17).

[0240] Further, the number of solid portions 30 is not particularly limited, and as shown in Figure 23 there can be a plurality of solid portions 30.

[0241] The first alignment mark 41 has a plurality (4) of solid portions 30. The plurality of solid portions 30 are provided in correspondence with the plurality of extension portions (the fifth extension portion 18, the sixth extension portion 19, the seventh extension portion 20, the eighth extension portion 21). The solid portions 30 overlap the free end portions of the extension portions, but are arranged offset with respect to the second origin portion 17.

[0242] Figure 24 The second alignment mark 42 shown in the modification example shown in Figure 23 is modified to have a shape that is substantially L-shaped in plan view. Figure 24 The modification example shown in Figure 23 is capable of achieving the same effects as the modification example shown in

[0243] In addition, in the modification example shown in Figures 16-24 , either one of the first alignment mark 41 and the second alignment mark 42 (specifically, the first alignment mark 41) has a solid portion 30, but as shown in Figures 25-28 , both can also be made to have a solid portion 30.

[0244] As shown in Figure 25 , the second alignment mark 42 has a substantially rectangular solid portion 30 having a second center-of-gravity portion C2.

[0245] The second center-of-gravity portion C2 is present in (included in) the solid portion 30 of the second alignment mark 42. Furthermore, the solid portion 30, although having a "center of gravity", when this "center of gravity" overlaps the solid portion 30 when projected in the thickness direction, is present in (included in) the solid portion 30 as a center-of-gravity portion (specifically, the second center-of-gravity portion C2).

[0246] Regarding the second center-of-gravity portion C2, when the second alignment mark 42 is soft-etched, in the second alignment mark 42, the etching solution is more likely to stagnate in the second center-of-gravity portion C2 than in the surrounding portion of the second center-of-gravity portion C2, and therefore, the position of the second center-of-gravity portion C2 in the thickness direction moves to the thickness direction side at a faster speed than the position of the surrounding portion in the thickness direction.

[0247] The first center-of-gravity portion C1 and the second center-of-gravity portion C2 are arranged offset in plan view.

[0248] The offset amount L of the first center-of-gravity portion C1 and the second center-of-gravity portion C2 satisfies the following equation together with the maximum length Z of the wiring circuit substrate 1.

[0249] Z / 100000 ≤ L ≤ Z × 2 / 3

[0250] The upper limit of the offset amount L is preferably [Z × 1 / 2], and more preferably [Z × 1 / 3].

[0251] Further, the lower limit of the deviation amount L is preferably [Z / 10000], more preferably [Z / 5000], and further preferably [Z / 3000].

[0252] Further, the second alignment mark 42 does not overlap the first alignment mark 41 in plan view, but is deviated with respect to the first alignment mark 41.

[0253] As shown in Figure 26 , the first alignment mark 41 and the second alignment mark 42 are allowed to partially overlap.

[0254] Specifically, as shown in Figure 26 , the corner portion of the first alignment mark 41 and the second alignment mark 42 overlap in plan view. However, the first center portion C1 and the second center portion C2 are deviatedly arranged.

[0255] The shape of the solid portion 30 of the second alignment mark 42 is not limited to the above, and as shown in Figures 27-28 , can be a substantially circular shape.

[0256] Figure 27 and Figure 28 are modified examples in which the first alignment mark 41 and the second alignment mark 42 of Figure 25 and Figure 26 are changed to a substantially circular shape.

[0257] <Second Embodiment>

[0258] In the following second embodiment, the same reference numerals are assigned to the same members and processes as those of the above-described first embodiment and modified examples, and detailed description thereof is omitted. Further, the second embodiment can have the same effects as the first embodiment and modified examples except for the specifically described contents. Furthermore, the first embodiment and modified examples can be appropriately combined.

[0259] The wiring circuit substrate 1 of the second embodiment satisfies the condition B, the first alignment mark 41 has the first portion, but the second alignment mark 42 does not have the second portion.

[0260] Specifically, as shown in Figure 29 A ~ Figure 29 B, the first alignment mark 41 has the first center portion C1 of the solid portion 30 as one example of the first portion.

[0261] On the other hand, the second alignment mark 42 does not have the second center portion C2 nor the second start portion 17. That is, the second alignment mark 42 does not have the second portion. Specifically, the second alignment mark 42 has a shape of a substantially circular ring in plan view, and is arranged apart from the first alignment mark 41 by a gap in the radial direction of the first alignment mark 41.

[0262] In this first embodiment, the first center-of-gravity portion CI of the first alignment mark 41 is arranged offset with respect to the second alignment mark 42 when viewed from above.

[0263] When the second alignment mark 42 is subjected to soft etching, since the second alignment mark 42 does not have a second portion (the second starting point portion 17 or the second center-of-gravity portion C2 (described later)), the retention of the etching solution in the second alignment mark 42 can be suppressed.

[0264] The shortest distance L of the first alignment mark 41 and the second alignment mark 42 satisfies the following expression together with the maximum length Z of the wiring circuit substrate 1.

[0265] Z / 100000 ≤ L ≤ Z x 2 / 3

[0266] The upper limit of the shortest distance L is preferably [Z x 1 / 2], more preferably [Z x 1 / 3].

[0267] Further, the lower limit of the shortest distance L is preferably [Z / 10000], more preferably [Z / 5000], and further preferably [Z / 3000].

[0268] Specifically, the shortest distance L is, for example, 10 mm or less, preferably 7.5 mm or less, more preferably 5 mm or less, and further preferably 3 mm or less, and, for example, 0.05 mm or more, preferably 0.03 mm or more, and more preferably 0.1 mm or more.

[0269] Further, the shortest distance L2 of the first center-of-gravity portion CI and the second alignment mark 42 satisfies the following expression together with the maximum length Z in the plane direction of the wiring circuit substrate 1.

[0270] Z / 100000 ≤ L2 ≤ Z x 2 / 3

[0271] The upper limit of the shortest distance L2 is preferably [Z x 1 / 2], more preferably [Z x 1 / 3].

[0272] Further, the lower limit of the shortest distance L2 is preferably [Z / 10000], more preferably [Z / 5000], and further preferably [Z / 3000].

[0273] Further, with respect to the wiring circuit substrate 1, since the second alignment mark 42 does not have a second portion, the wiring circuit substrate 1 satisfies the condition B. Therefore, when the second alignment mark 42 is subjected to soft etching, the retention of the etching solution in the second alignment mark 42 can be suppressed, and thus the thickness direction position of the second alignment mark 42 can be slowly moved to one side. That is, the thickness direction position of the second alignment mark 42 can be suppressed from being greatly moved to one side in the thickness direction.

[0274] Meanwhile, since the shortest distance L between the first alignment mark 41 and the second alignment mark 42 satisfies the above formula, the wiring circuit board 1 can be miniaturized and can simultaneously implement alignment using the first alignment mark 41 and alignment using the second alignment mark 42.

[0275] Furthermore, since the first centroid portion C1 is offset relative to the second alignment mark 42 when viewed from above, the formation of through holes caused by the overlap of the first centroid portion C1 and the second alignment mark 42 can be prevented even if the thickness direction position of the first centroid portion C1 moves to the other side during soft etching of the first alignment mark 41 and the second alignment mark 42. Therefore, the visibility of the first alignment mark 41 and the second alignment mark 42 is excellent.

[0276] Furthermore, as long as the shortest distance L2 between the first centroid portion C1 and the second alignment mark 42 satisfies the above formula, the wiring circuit board 1 can be miniaturized and can simultaneously implement alignment using the first alignment mark 41 containing the first centroid portion C1 and alignment using the second alignment mark 42.

[0277] <Variation Example>

[0278] In the following variations, the same reference numerals are used to indicate the same components and processes as in the first and second embodiments described above, and detailed descriptions are omitted. Furthermore, except for the specifically described contents, each variation can achieve the same effects as the first and second embodiments. Moreover, the first embodiment, the second embodiment, and the variations can be appropriately combined.

[0279] exist Figure 30 A~ Figure 30 In the variation shown in B, when viewed from above, the second alignment mark 42 is included within the first alignment mark 41. Specifically, the second alignment mark 42 is positioned at a distance from the first alignment mark 41, inside the outer edge of the first alignment mark 41. When viewed from above, the second alignment mark 42 radially overlaps with the peripheral end of the first alignment mark 41. Therefore, the first alignment mark 41 and the second alignment mark 42 can be arranged compactly.

[0280] exist Figure 31 A~ Figure 31 In the variation shown in B, the outer edge of the first alignment mark 41 is positioned between the outer edge and the inner edge of the second alignment mark 42. When viewed from above, the radially inner portion of the second alignment mark 42 overlaps with the peripheral end of the first alignment mark 41.

[0281] exist Figure 29 A~ Figure 31In B, since the area of the overlapping portion of the second alignment mark 42 with the first alignment mark 41 is small or there is no overlapping portion, it is preferable from the viewpoint of suppressing the formation of a through-hole due to this situation Figure 29 A Figure 30 A variation of B, and more preferably the second alignment mark 42 and the first alignment mark 41 are offset Figure 29 A Figure 29 A variation of B.

[0282] In Figure 32 In the variation shown in FIG. 9, the first center portion C1 is disposed offset outward with respect to the second alignment mark 42. Thus, the structure of the first alignment mark 41 and the second alignment mark 42 is simple.

[0283] In Figures 33-34 In the variation shown in FIG. 10, a part of the peripheral end portion of the first alignment mark 41 overlaps the second alignment mark 42.

[0284] In Figure 33 In the variation shown in FIG. 11, the first center portion C1 is disposed offset outward with respect to the second alignment mark 42.

[0285] In Figure 34 In the variation shown in FIG. 12, the first center portion C1 is disposed offset inward with respect to the second alignment mark 42.

[0286] In Figures 32-34 In the variation shown in FIG. 13, from the viewpoint of compactly disposing the first alignment mark 41 and the second alignment mark 42, it is preferable that Figures 33-34 In the variation shown in FIG. 14, more preferably Figure 34 In the variation shown in FIG. 15.

[0287] The second alignment mark 42 is not particularly limited in shape as long as it does not have the second portion (the second starting point portion 17 or the second center portion C2), and as shown in Figure 35 for example, can have a substantially semicircular shape in plan view.

[0288] As shown in Figures 36-38 In addition, the first alignment mark 41 can also have a substantially rectangular shape in plan view with the first center portion C1, as shown in

[0289] As shown in Figure 36 The first alignment mark 41 is disposed with a gap with respect to the second alignment mark 42 on the inner side of the second alignment mark 42. Thus, the first center portion C1 is disposed offset with respect to the second alignment mark 42.

[0290] As shown in Figure 37As shown, if the first center-of-gravity portion C1 is offset with respect to the second alignment mark 42, the first alignment mark 41 can also contain the entire second alignment mark 42 in plan view.

[0291] Also, as shown, the corner portion of the first alignment mark 41 is allowed to overlap the second alignment mark 42 in plan view. Figure 38

[0292] In addition, as shown, the first alignment mark 41 can have a first starting point portion 10 instead of the first center-of-gravity portion C1, the first starting point portion 10 being disposed offset with respect to the second alignment mark 42 in plan view. Figures 39-40 In the modification shown in

[0293] , the first alignment mark 41 is disposed offset inward of the second alignment mark 42 in plan view. Specifically, the first alignment mark 41 is surrounded by the second alignment mark 42 in plan view. Figure 39 In the modification shown in

[0294] , the first to fourth extension portions 13 to 16 overlap the second alignment mark 42 in plan view. Figure 40 In the modification shown in

[0295] , from the viewpoint of preventing formation of a through-hole, the first to fourth extension portions 13 to 16 are preferably disposed offset with respect to the second alignment mark 42 in plan view. Figures 39-40 Figure 39 On the other hand, in the modification shown in , from the viewpoint of compactly disposing the first alignment mark 41 and the second alignment mark 42, the first to fourth extension portions 13 to 16 are preferably disposed so as to overlap the second alignment mark 42 in plan view.

[0296] Figures 39-40 Figure 40 Also, in the second embodiment and the modifications thereof, as shown in A to

[0297] , the first center-of-gravity portion C1 is disposed offset with respect to the second alignment mark 42 in plan view. Figure 29 Figure 40 However, as shown in A to

[0298] C, the first center-of-gravity portion C1 or the first starting point portion 10, which is one example of the first portion, can also overlap the second alignment mark 42 in plan view. Figure 41 Figure 41 In the modification shown in A, the first alignment mark 41 has a solid portion 30 having a substantially circular shape in plan view, and the first center-of-gravity portion C1 of the solid portion 30 overlaps the second alignment mark 42 in plan view.

[0299] Figure 41 In the modification shown in , the first alignment mark 41 has a solid portion 30 having a substantially circular shape in plan view, and the first center-of-gravity portion C1 of the solid portion 30 overlaps the second alignment mark 42 in plan view.

[0300] Figure 41 ​​​In the modification shown in B, the first alignment mark 41 has a solid portion 30 having a substantially rectangular shape in plan view, and a first center-of-gravity portion Cl of the solid portion 30 overlaps the second alignment mark 42 in plan view.

[0301] In Figure 41 In the modification shown in C, the first alignment mark 41 has a first starting point portion 10 overlapping the second alignment mark 42 in plan view.

[0302] According to Figure 41 A~ Figure 41 In the modification shown in C, when the first alignment mark 41 and the second alignment mark 42 are soft-etched, since the second alignment mark 42 does not have the second portion described above, a rapid movement of the thickness-direction position of the second alignment mark 42 to one side due to stagnation of the etching solution like the second portion can be suppressed. Thus, a slow movement of the thickness-direction position of the second alignment mark 42 to one side can be achieved.

[0303] As a result, as Figure 41 A~ Figure 41 In the modification shown in C, even if the first center-of-gravity portion Cl or the first starting point portion 10, which is one example of the first portion, overlaps the second alignment mark 42 in plan view, since the thickness-direction position of the second alignment mark 42 moves slowly to one side, the formation of the through-hole described above can also be suppressed.

[0304] Further, compared to the modification shown in Figure 41 A~ Figure 41 C, the second embodiment and the modification shown in Figure 29 A~ Figure 40 are more suitable. If the second embodiment and the modification shown in Figure 29 A~ Figure 40 , the first center-of-gravity portion Cl is disposed offset with respect to the second alignment mark 42 in plan view, and thus the formation of the through-hole due to the overlap of the first center-of-gravity portion Cl or the first starting point portion 10 with the second alignment mark 42 can be prevented.

[0305] <3RD EMBODIMENT>

[0306] In the following third embodiment, the same reference numerals are assigned to the same members and processes as those of the first embodiment, the second embodiment, and the modifications described above, and detailed descriptions thereof are omitted. In addition, the third embodiment can have the same effects as the first embodiment, the second embodiment, and the modifications described above, except for the special descriptions. Furthermore, the first embodiment, the second embodiment, and the modifications described above can be appropriately combined.

[0307] The wiring circuit substrate 1 of the third embodiment satisfies the condition B, the first alignment mark 41 does not have the first portion, and the second alignment mark 42 does not have the second portion.

[0308] Specifically, as shown in Figure 42 A ~ Figure 47 The first alignment mark 41 does not have the first starting point portion 10 nor the first center of gravity portion Cl of the solid portion 30. That is, the first alignment mark 41 does not have the first portion. In addition, the second alignment mark 42 does not have the second starting point portion 17 nor the second center of gravity portion C2 of the solid portion 30. That is, the second alignment mark 42 does not have the second portion.

[0309] The first alignment mark 41 has a substantially circular ring shape in plan view. In addition, the first alignment mark 41 has a center of gravity but does not have the first center of gravity portion Cl overlapping the first alignment mark 41 in plan view.

[0310] The second alignment mark 42 has a center of gravity but does not have the second center of gravity portion C2 overlapping the second alignment mark 42 in plan view.

[0311] Furthermore, the second alignment mark 42 is disposed on the outer side of the first alignment mark 41 in plan view, deviated with respect to the first alignment mark 41. Specifically, the second alignment mark 42 has a substantially circular ring shape in plan view, larger than the first alignment mark 41.

[0312] The deviation amount L of the first alignment mark 41 and the second alignment mark 42, the shortest distance from the outer edge of the first alignment mark 41 to the inner edge of the second alignment mark 42, and the maximum length Z of the wiring circuit substrate 1 satisfy the following formula.

[0313] Z / 100000 ≤ L ≤ Z x 2 / 3

[0314] The upper limit of the deviation amount L is preferably [Z x 1 / 2], more preferably [Z x 1 / 3].

[0315] In addition, the lower limit of the deviation amount L is preferably [Z / 10000], more preferably [Z / 5000], and further preferably [Z / 3000].

[0316] When the first alignment mark 41 and the second alignment mark 42 are subjected to soft etching, since the first alignment mark 41 does not have the first portion and the second alignment mark 42 does not have the second portion, the retention of the etching solution in both the first alignment mark 41 and the second alignment mark 42 can be suppressed.

[0317] Further, the third embodiment satisfies the condition B, the first alignment mark 41 does not have the first portion, and the second alignment mark 42 does not have the second portion. Therefore, when the first alignment mark 41 and the second alignment mark 42 are subjected to soft etching, the first alignment mark 41 can suppress the rapid movement of the thickness direction position to the other side due to the stagnation of the etching solution like the first portion described above, and the second alignment mark 42 can suppress the rapid movement of the thickness direction position to the one side due to the stagnation of the etching solution like the second portion described above. Therefore, the slow movement of the thickness direction position of the first alignment mark 41 to the other side and the slow movement of the thickness direction position of the second alignment mark 42 to the one side can be taken into account.

[0318] Further, in the third embodiment, the first alignment mark 41 originally deviates from the second alignment mark 42 in plan view, and therefore, when the first alignment mark 41 and the second alignment mark 42 are subjected to soft etching, the formation of a through-hole due to the overlap of the first alignment mark 41 and the second alignment mark 42 can be prevented. Therefore, the visibility of the first alignment mark 41 and the second alignment mark 42 is excellent.

[0319] Meanwhile, since the first alignment mark 41 deviates from the second alignment mark 42 by the deviation amount L satisfying the above formula, the wiring circuit substrate 1 can be downsized, and alignment using the first alignment mark 41 and alignment using the second alignment mark 42 can be simultaneously performed.

[0320] Thus, the wiring circuit substrate 1 can be downsized and thinned, and has the first alignment mark 41 and the second alignment mark 42 with excellent visibility, and alignment using the first alignment mark 41 and the second alignment mark 42 can be simultaneously performed.

[0321] <Modification Examples>

[0322] In each of the following modification examples, the same reference numerals are assigned to the same members and processes as those of the first to third embodiments described above, and detailed description thereof will be omitted. In addition, each of the modification examples can have the same effects as the first to third embodiments except for the specifically described contents. Further, the first to third embodiments and the modification examples can be appropriately combined.

[0323] The shape of the second alignment mark 42 is not particularly limited as long as it does not have the second portion, and for example, as shown in FIG. 9, it can have a substantially elliptical shape in plan view. Figure 43

[0324] As shown in FIG. 10, the second alignment mark 42 can have a substantially rectangular shape in plan view. Figure 44 ​As shown, the first alignment mark 41 can also be disposed offset to the outside of the second alignment mark 42. The first alignment mark 41 and the second alignment mark 42 are disposed offset to each other in plan view. Thus, the first alignment mark 41 and the second alignment mark 42 are simple in structure.

[0325] As shown, the first alignment mark 41 can have a shape in plan view of a substantially circular arc open toward one side, and the second alignment mark 42 can have a shape in plan view of a substantially circular arc open toward the other side. Figure 45

[0326] In addition, as shown, the first alignment mark 41 and the second alignment mark 42 can each be a shape in plan view of a substantially circular arc open toward the same direction. Figure 46

[0327] In addition, as shown, the first alignment mark 41 and the second alignment mark 42 can each have a shape in plan view of a substantially letter C. Figure 47

[0328] In plan view, the second alignment mark 42 passes between the two free ends of the first alignment mark 41, and the first alignment mark 41 passes between the two free ends of the second alignment mark 42.

[0329] And, in the third embodiment and the modification example, as shown in Figure 42 A ~ Figure 47 The first alignment mark 41 is disposed offset to the second alignment mark 42 in plan view. However, as shown in Figure 48 A ~ Figure 48 B, the first alignment mark 41 can also coincide with the second alignment mark 42 in plan view.

[0330] The second alignment mark 42 has the same shape in plan view of a substantially circular ring as the first alignment mark 41. The first alignment mark 41 and the second alignment mark 42 coincide with each other in plan view.

[0331] In this modification example, even if the first alignment mark 41 and the second alignment mark 42 coincide, since the slow movement of the thickness direction position of the first alignment mark 41 to the other side and the slow movement of the thickness direction position of the second alignment mark 42 to one side can be taken into account when soft etching is performed on the first alignment mark 41 and the second alignment mark 42, the formation of the through hole due to the overlap of the first alignment mark 41 and the second alignment mark 42 can also be suppressed.

[0332] Furthermore, the third embodiment and the modification example shown in Figure 48 A ~ Figure 48 B are more appropriate than the modification example shown in Figure 42 A ~ Figure 47 If so, the first alignment mark 41 and the second alignment mark 42 can be formed by soft etching.​​​Figure 42 A Figure 47 In the third embodiment and the modification shown in FIG. 3, the first alignment mark 41 is arranged offset with respect to the second alignment mark 42 in plan view, and thus the formation of the through hole due to the overlap of the first alignment mark 41 and the second alignment mark 42 can be prevented.

[0333] Furthermore, the above-described invention is provided as an example of an embodiment of the present invention, but this is merely an example and cannot be interpreted limitatively. Variations of the present invention that are clear to those skilled in the art are included in the above-described claims.

[0334] Industrial applicability

[0335] The wiring circuit substrate can be applied to various uses.

[0336] Explanation of reference numerals

[0337] 1, wiring circuit substrate; 2, base insulating layer; 4, cover insulating layer; 10, first starting point portion (one example of the first portion); 11, alignment mark layer; 12, second alignment mark layer; 17, second starting point portion (one example of the second portion); 30, solid portion; 41, first alignment mark; 42, second alignment mark; Cl, first center of gravity portion (one example of the first portion); C2, second center of gravity portion (one example of the second portion).

Claims

1. A wiring circuit board having an alignment mark layer and an insulating layer disposed on one side and the other side of the alignment mark layer in the thickness direction. The wiring circuit board is characterized by the following features: The alignment mark layer has: A first alignment mark, which is exposed from the insulating layer on the thickness side; and The second alignment mark is exposed from the insulating layer on the other side in the thickness direction. The alignment mark layer has one side and another side that are opposite each other in the thickness direction. An insulating layer disposed on one side of the alignment mark layer in the thickness direction has an opening corresponding to the first alignment mark. An insulating layer disposed on the other side of the alignment mark layer in the thickness direction has an opening corresponding to the second alignment mark. The first alignment mark is the portion of one side of the alignment mark layer that is exposed to one side from the opening. The second alignment mark is the portion of the other side of the alignment mark layer that is exposed from the opening to the other side. The first alignment mark and the second alignment mark satisfy either condition A or condition B below. Condition A: The first alignment mark has a first portion, which is at least one portion selected from a group including a first starting point portion that is a starting point extending in multiple directions in an orthogonal direction orthogonal to the thickness direction, and a first centroid portion of a solid portion that is continuous in the orthogonal direction. The second alignment mark has a second portion, which is at least one portion selected from a group including a second starting point portion that serves as the starting point for extending in multiple directions in the orthogonal direction, and a second centroid portion that is a continuous solid portion in the orthogonal direction. The first part is offset from the second part by an offset amount L when viewed from above. The offset amount L and the maximum length Z of the wiring circuit board satisfy the following formula. Z / 100000≤L≤Z×2 / 3 Condition B: The first alignment mark has the first portion, but the second alignment mark does not have the second portion. or The first alignment mark does not have the first portion, and the second alignment mark does not have the second portion. The shortest distance L between the first alignment mark and the second alignment mark when viewed from above satisfies the following formula with respect to the maximum length Z of the wiring circuit board. Z / 100000≤L≤Z×2 / 3.

2. The wiring circuit board according to claim 1, characterized in that, The second alignment mark has the same or similar shape as the first alignment mark.

3. The wiring circuit board according to claim 1 or 2, characterized in that, The first alignment mark and the second alignment mark satisfy condition B. The first alignment mark has the first portion, and the second alignment mark does not have the second portion. The first part is offset from the second alignment mark by an offset amount L when viewed from above. The offset amount L and the maximum length Z of the wiring circuit board satisfy the following formula. Z / 100000≤L≤Z×2 / 3.

4. The wiring circuit board according to claim 1 or 2, characterized in that, The first alignment mark and the second alignment mark do not overlap when viewed from above.

5. The wiring circuit board according to claim 4, characterized in that, The second alignment mark surrounds the first alignment mark when viewed from above.

6. A method for manufacturing a wiring circuit board, wherein the method for manufacturing a wiring circuit board is as described in any one of claims 1 to 5. The manufacturing method of this wiring circuit board is characterized by having: The process of configuring the alignment mark layer and the insulating layer; The process of exposing the first alignment mark from the insulating layer to the thickness direction; The process of exposing the second alignment mark from the insulating layer to the other side in the thickness direction; and The process of soft etching the first alignment mark and the second alignment mark.

Images