Heating structures and semiconductor process equipment

Abstract

The application provides a heating structure for a semiconductor process equipment, which is arranged between a dielectric window and a radio frequency coil, and comprises a heating layer arranged on the dielectric window; the heating layer comprises heating wires which are radially coiled around the center of the dielectric window, and each of the heating wires comprises a plurality of spoke segments extending along the radial direction of the dielectric window, and the two ends of each spoke segment are connected to the adjacent ends of one of the two adjacent spoke segments on the two sides. In the application, the heating layer formed by radially coiling the heating wires is arranged between the dielectric window and the radio frequency coil, so that the surface of the dielectric window is uniformly heated while avoiding the generation of eddy current, and the uniformity of the temperature field in the process chamber is improved; in addition, the heating layer can also reduce the parasitic capacitive coupling electric field in the inductive coupling discharge of the upper electrode, and improve the uniformity of the electric field in the process chamber; and in addition, the application also provides a larger heat dissipation space for the upper electrode. The application also provides a semiconductor process equipment.

Description

Technical Field

[0001] This invention relates to the field of semiconductor process equipment, and more specifically, to a heating structure for semiconductor process equipment and a semiconductor process equipment including the heating structure. Background Technology

[0002] With the rapid development of semiconductor device manufacturing processes, the requirements for device performance and integration are becoming increasingly stringent, leading to the widespread application of plasma processing technology. Inductively coupled plasma sources, with their advantages of high selectivity, high anisotropy, and high etching rate, are widely used in the field of microelectronics processing. However, as feature sizes continue to shrink, the challenges faced in the processing are becoming increasingly severe, one of the most important requirements being the consistency of the plasma source.

[0003] To ensure the consistency of inductively coupled plasma (ICP) etching, it is necessary not only to improve the uniformity of the magnetic field distribution within the process chamber but also to compensate for the uniformity of the temperature distribution. Therefore, while optimizing the symmetry of the ICP coil distribution, it is crucial to optimize the heating method of the dielectric window to enhance the etching machine's ability to manufacture highly integrated devices. However, existing dielectric window heating schemes suffer from low heating uniformity and large heating structure volume, affecting the heat dissipation performance of the upper electrode. Therefore, providing a dielectric window heating structure with high heating uniformity and a smaller size has become a pressing technical problem to be solved in this field. Summary of the Invention

[0004] The present invention aims to provide a process chamber for semiconductor process equipment, which can improve the uniformity of temperature field and electric field in the process chamber and improve the heat dissipation efficiency of the upper electrode.

[0005] To achieve the above objectives, as one aspect of the present invention, a heating structure for semiconductor process equipment is provided, the heating structure being disposed between a dielectric window and a radio frequency coil, the heating structure including a heating layer disposed on the dielectric window;

[0006] The heating layer includes a heating wire that is radially coiled around the center of the medium window. The heating wire includes multiple spoke segments extending radially along the medium window, and the two ends of each spoke segment are respectively connected to the adjacent end of one of the two adjacent spoke segments on both sides.

[0007] Optionally, the heating structure further includes a shielding layer disposed above the heating layer;

[0008] The shielding layer is made of conductive material and has multiple fan-shaped holes arranged circumferentially on it.

[0009] The projections of the plurality of fan-shaped holes on the medium window are located within the projection of the heating wire on the medium window.

[0010] Optionally, the material of the shielding layer is copper or aluminum.

[0011] Optionally, the thickness of the shielding layer is greater than 0.3 mm.

[0012] Optionally, the heating structure further includes an insulation layer disposed between the heating layer and the shielding layer.

[0013] Optionally, the heating layer, the insulation layer, and the shielding layer are fixed to each other with adhesive.

[0014] Optionally, the heating structure further includes a heating AC power supply, which is used to provide an AC voltage signal to the heating wire of the heating layer.

[0015] Optionally, the heating structure further includes an RF voltage source and a switching module, wherein the switching module is used to provide an RF voltage signal to the shielding layer during the upper electrode ignition stage, and to ground the shielding layer after ignition is completed.

[0016] Optionally, the radio frequency voltage source is connected to the shielding layer through multiple access points, and the multiple access points are distributed at equal intervals along the axial direction at the edge of the shielding layer.

[0017] As a second aspect of the present invention, a semiconductor process apparatus is provided, including a reaction chamber, a dielectric window, and a radio frequency coil, wherein the dielectric window is disposed at the top of the reaction chamber, and the radio frequency coil is disposed on the side of the dielectric window opposite to the reaction chamber for feeding radio frequency, characterized in that it further includes the heating structure described above.

[0018] In the heating structure and semiconductor process equipment provided by this invention, a heating layer formed by radially winding a heating wire is disposed between the dielectric window and the radio frequency coil. This achieves uniform heating of the dielectric window surface while avoiding the generation of eddy currents, thereby improving the uniformity of the temperature field in the process chamber. Furthermore, the heating layer not only achieves uniform heating of the dielectric window but also reduces the non-uniformity of the axial electric field component generated by the parasitic capacitive coupling component in the inductively coupled discharge of the upper electrode, further improving the uniformity of the electric field in the process chamber. In addition, the heating layer attached to the dielectric window provides a larger heat dissipation space for the upper electrode, improving the heat dissipation efficiency of the upper electrode in high-power mode, and thus improving the overall performance of the process chamber. Attached Figure Description

[0019] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used together with the following detailed description to explain the invention, but do not constitute a limitation thereof. In the drawings:

[0020] Figure 1 This is a schematic diagram of an existing upper electrode compensation heating scheme;

[0021] Figure 2 yes Figure 1 Top view of the structure;

[0022] Figure 3 yes Figure 1 A schematic diagram of the heating effect of the upper electrode compensation heating scheme shown;

[0023] Figure 4 This is a schematic diagram of the structure of the semiconductor process equipment provided in an embodiment of the present invention;

[0024] Figure 5 This is a schematic diagram of the electric field generated when the upper electrode of the semiconductor process equipment provided in the embodiment of the present invention is working;

[0025] Figure 6 This is a simplified schematic diagram of the electric field generated by the upper electrode when it is working in the semiconductor process equipment provided in the embodiment of the present invention;

[0026] Figure 7 This is a schematic diagram of the heating structure provided in an embodiment of the present invention;

[0027] Figure 8 This is a schematic diagram showing the positional relationship between the heating pattern and the metal pattern in the heating structure provided in this embodiment of the invention;

[0028] Figure 9 This is a schematic diagram of the metal pattern in the heating structure provided in the embodiment of the present invention;

[0029] Figure 10 This is a schematic diagram of the circuit connected to the heating structure in the semiconductor process equipment provided in this embodiment of the invention;

[0030] Figure 11 This is a schematic diagram of the shielding layer in a heating structure provided in one embodiment of the present invention;

[0031] Figure 12 This is a schematic diagram of the shielding layer in a heating structure provided in another embodiment of the present invention. Detailed Implementation

[0032] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit the present invention.

[0033] Existing medium window heating solutions typically combine hot air heating with gas distribution plate (GDP) heating, and their technical solutions are as follows: Figure 1 , Figure 2 As shown. In the hot air heating method, due to the obstruction of the coil, the hot air system can only introduce heated gas (obtained by heating air from the air heating module 12) between the inner and outer inductor coils through the compressed dry air (CDA) duct 11, achieving the function of heating the middle of the dielectric window. The GDP heating method uses a ring-shaped heating wire 13 fixed around the periphery of the dielectric window to achieve the function of heating the edge of the dielectric window. The heating uniformity of the dielectric window is controlled by adjusting the ratio between the hot air heating system and the GDP heating system.

[0034] However, existing technologies suffer from insufficient temperature control below the coil, resulting in localized excessively low temperatures. Furthermore, adjusting the ratio of the hot air heating system to the GDP heating system fails to achieve uniform heating of the dielectric window, thus affecting temperature uniformity below the dielectric window and causing differences in etching rates. Figure 3 As shown. More seriously, as etching progresses, temperature differences may cause non-volatile particles to detach from the window and land on the wafer, affecting the etching process. Furthermore, in inductively coupled plasma (ICP) technology, higher power coil operation typically requires greater heat dissipation and insulation space, and existing heating technologies are not suitable for high-power ICP operation.

[0035] To address the aforementioned technical problems, as one aspect of the present invention, a heating structure 100 for semiconductor process equipment is provided, such as... Figure 4 , Figure 7 As shown, the heating structure 100 is disposed between the dielectric window 200 and the radio frequency coil (e.g., Figure 2 , Figure 4 , Figure 7 As shown, the heating structure 100 includes a heating layer 110, which is disposed on the medium window 200, between an outer ring 310, an inner ring 320, and a connecting strip 330 connecting the ends of the two. Figure 8 As shown, the heating layer 110 includes a heating wire 111, which is radially coiled around the center of the medium window 200. The heating wire 111 includes multiple spoke segments extending radially along the medium window 200, and the two ends of each spoke segment are respectively connected to the adjacent end of one of the two adjacent spoke segments on both sides.

[0036] In this invention, the heating layer 110 in the heating structure 100 includes heating wires 111 radially coiled around the center of the medium window 200. The heating wires 111 can generate heat when energized, thereby achieving uniform heating of the medium window 200. It should be noted that in this invention, the heating layer 110 is formed by radially winding the heating wires 111, similarly forming multiple independent fan-shaped regions.

[0037] Specifically, such as Figure 5 , Figure 6 As shown, when the RF power supply provides an RF signal to the RF coil through the matching network, an inductively coupled RF electric field (used to couple with the process gas in the reaction chamber 400 to excite plasma) is generated below the RF coil and propagates circumferentially along the axial direction of the reaction chamber 400. A capacitively coupled RF electric field (parasitic on the inductively coupled electric field) also has components in both the axial and radial directions of the reaction chamber 400. If the heating wire 111 is angularly wound (i.e., the heating wire 111 extends circumferentially), the circumferentially propagating RF electric field generated by the RF coil will act on the heating wire 111, causing eddy currents in the angularly wound heating wire 111. This not only affects the coupling efficiency between the RF coil and the gas in the reaction chamber 400, but may even cause the heating wire 111 to melt under high power conditions.

[0038] Therefore, in this invention, the heating wire 111 is formed by winding multiple radially extending spoke segments end to end. This avoids the generation of eddy currents by coupling with the radio frequency electric field of the upper electrode, while ensuring that the heating wire 111 is uniformly spread on the surface of the dielectric window 200 in the angular and radial directions. This enables uniform heating of the surface of the dielectric window 200 and improves the uniformity of the temperature field in the reaction chamber 400.

[0039] Meanwhile, the phase difference of the RF coil current itself often leads to non-uniform capacitive coupling parasitically in inductive coupling, which in turn affects the uniformity of the electric field of the gas in the reaction chamber 400. In this invention, the heating wire 111 includes radially extending spoke segments, which can shield the capacitively coupled RF electric field to a certain extent, thereby improving the uniformity of the electric field in the reaction chamber 400.

[0040] In this invention, a heating layer 110 formed by radially winding a heating wire 111 is provided between the dielectric window 200 and the radio frequency coil. This achieves uniform heating of the surface of the dielectric window 200 while avoiding the generation of eddy currents, thereby improving the uniformity of the temperature field in the reaction chamber 400. Furthermore, the heating layer 110 not only achieves uniform heating of the dielectric window 200 but also reduces the non-uniformity of the axial electric field component generated by the parasitic capacitive coupling component in the inductively coupled discharge of the upper electrode, thus improving the uniformity of the electric field in the reaction chamber 400. In addition, the heating layer 110 is attached to the dielectric window 200, thus providing a larger heat dissipation space for the upper electrode (radio frequency coil) compared to the prior art scheme that heats the dielectric window 200 through a compressed dry air duct and a gas distribution disk heating system. This improves the heat dissipation efficiency of the upper electrode in high-power mode, thereby improving the overall performance of the reaction chamber 400.

[0041] In this invention, the heating wire 111 of the heating layer 110 needs to generate heat to achieve the heating function when energized. To improve the heat generation efficiency, the heating wire 111 needs to have a large resistance value, and therefore the heating wire 111 needs to have a small cross-section. After research, the inventors confirmed that to obtain a good capacitive coupling electric field shielding effect, the metal film layer on the dielectric window 200 needs to achieve a shielding coverage rate of 40% to 65% on the surface of the dielectric window 200. A typical shielding coverage rate is 52%, that is, the aperture ratio (aperture area, i.e., the ratio of the area without metal coverage to the total area of ​​the dielectric window 200) is 48%. However, due to the small cross-sectional size of the heating wire 111, only a shielding coverage rate of 5% to 20% can be achieved, which cannot achieve the ideal shielding effect.

[0042] To solve the above-mentioned technical problems, as a preferred embodiment of the present invention, such as Figure 7 , Figure 8 , Figure 9 As shown, the heating structure 100 also includes a shielding layer 120, which is disposed above the heating layer 110. The shielding layer 120 is made of a conductive material (e.g., a metal material), and the shielding layer 120 has a plurality of fan-shaped holes 121 arranged circumferentially. Figure 9 As shown, the shielding layer 120 is formed as a grid-like conductive film layer with a plurality of radially extending and radiating fan-shaped holes 121. The projections of the plurality of fan-shaped holes 121 on the dielectric window 200 are located within the projections of the heating wire 111 on the dielectric window 200.

[0043] like Figure 8The diagram shows the positional relationship between the heating wire 111 of the heating layer 110 and the fan-shaped holes 121 of the shielding layer 120 from a bottom-view perspective (hiding the structure between the heating layer 110 and the shielding layer 120). In this embodiment of the invention, the heating structure 100 further includes a shielding layer 120 disposed on the heating layer 110. The heating wire 111 surrounds the outside of each fan-shaped hole 121 of the shielding layer 120, thereby covering the heating wire 111 through the shielding layer 120 and shielding the capacitive coupling electric field generated by the radio frequency coil instead of the heating wire 111. Furthermore, the width of the fan-shaped holes 121 can be adjusted as needed to achieve a shielding coverage rate of 40% to 65% on the surface of the dielectric window 200, improving the shielding effect on the capacitive coupling electric field generated by the radio frequency coil, and thus improving the uniformity of the electric field in the reaction chamber 400.

[0044] It should be noted that an insulating gap is provided between the shielding layer 120 and the heating layer 110 to avoid short circuits between them. In a preferred embodiment of the present invention, the size of the fan-shaped hole 121 is slightly smaller than the projected space between two adjacent heating wires 111, thereby enabling the shielding layer 120 to achieve a typical 52% shielding coverage of the dielectric window 200.

[0045] To further improve the shielding effect of the shielding layer 120 on capacitively coupled electric fields, as a preferred embodiment of the present invention, the material of the shielding layer 120 is a material with high electrical conductivity. For example, the material of the shielding layer 120 may be copper (Cu) or aluminum (Al).

[0046] In this embodiment of the invention, the thickness of the shielding layer 120 and the heating layer 110 is not specifically limited. For example, as an easily implemented embodiment, the thickness of the shielding layer 120 and the heating layer 110 can be 0.5 mm. To ensure the shielding effect of the shielding layer 120 on the capacitive coupling electric field, preferably, the thickness of the shielding layer 120 can be slightly thicker, for example, the thickness of the shielding layer 120 can be greater than 0.3 mm.

[0047] To further improve the overall performance of the reaction chamber 400, as a preferred embodiment of the present invention, such as... Figure 7 As shown, the heating structure 100 also includes a heat insulation layer 130, which is disposed between the radio frequency coil and the heating layer 110. In this embodiment of the invention, the heat insulation layer 130 is disposed on the side of the heating layer 110 facing away from the dielectric window 200, thereby ensuring that the heat generated by the heating layer 110 is transferred unidirectionally to the dielectric window 200 (ultimately fed into the plasma in the reaction chamber 400), improving the utilization rate of the heat generated by the heating layer 110. Furthermore, the heat insulation layer 130 can prevent the heat power of the heating layer 110 from radiating to the upper electrode (radio frequency coil), thereby reducing the heating rate of the upper electrode, further improving the heat dissipation efficiency of the upper electrode, and thus improving the overall performance of the reaction chamber 400.

[0048] To reduce the overall thickness of the heating structure 100, as a preferred embodiment of the present invention, such as... Figure 7 As shown, the heat insulation layer 130 is disposed between the heating layer 110 and the shielding layer 120. In this embodiment of the invention, the heat insulation layer 130 is located between the shielding layer 120 and the heating layer 110. While controlling the heat conduction direction of the heat generated by the heat insulation layer 130, the heat insulation layer 130 can also insulate and separate the shielding layer 120 from the heating layer 110, thereby saving the space for setting an insulating layer between the shielding layer 120 and the heating layer 110, and thus reducing the overall thickness of the heating structure 100.

[0049] As an optional embodiment of the present invention, the heating layer 110 can be powered by an AC power source, specifically, as shown in the example below. Figure 10 As shown, the heating structure 100 also includes an alternating current (AC) power supply 112, which provides an AC voltage signal to the heating wire 111 of the heating layer 110.

[0050] To facilitate the connection between the AC power supply 112 and the heating wire 111, such as Figure 8 As shown, the heating wire 111 is preferably disconnected at a certain point on the outer ring 310, and the two ends formed by the disconnection are connected to the two poles of the heating AC power supply 112, thereby realizing AC power supply.

[0051] In a preferred embodiment of the present invention, the shielding layer 120 can also participate in semiconductor process steps in conjunction with specific electrical signals, specifically, such as... Figure 10 As shown (in the figure, R+jXc represents the equivalent impedance of the heating structure 100 connected to the chamber grounding terminal through the plasma in the chamber), the heating structure 100 also includes an RF voltage source 122 and a switching module (not shown). The switching module is used to provide an RF voltage signal (RF Voltage) to the shielding layer 120 through the matching circuit Match during the upper electrode ignition stage, and to ground the shielding layer 120 after ignition.

[0052] In this embodiment of the invention, the heating structure 100 further includes an RF voltage source 122 and a switching module. Under low power conditions (RF power less than 200W), the switching module can provide an instantaneous capacitive high voltage (e.g., amplitude P of 50V to 1000V, frequency F of 13.56MHz) RF signal to the shielding layer 120 through the matching unit 124 (Match) during inductive coupling ignition (i.e., the upper electrode ignition stage). After ignition is completed, the shielding layer 120 is grounded, and the shielding layer 120 continues to shield the axial electric field component generated by the capacitive coupling component parasitic on the upper electrode, thereby improving the uniformity of plasma distribution.

[0053] This invention does not specifically limit how the switching module switches the shielding layer 120 between being connected to the RF voltage source 122 and being grounded. For example, optionally, the switching module includes a high-voltage relay switch, through which the shielding layer 120 is selectively connected to either the RF voltage source 122 or the ground wire. In semiconductor processes, the connection state of the high-voltage relay switch can be controlled by the control module of the reaction chamber 400. In some embodiments of this invention, the RF voltage source 122 can be directly shunt from the upper electrode RF power supply (SRF), or a separate RF source can be used.

[0054] The embodiments of the present invention do not specifically limit how the radio frequency voltage source 122 is connected to the shielding layer 120. For example, optionally, as shown in the following embodiments... Figure 11 As shown, the radio frequency voltage source 122 can feed radio frequency voltage signals into the shielding layer 120 through the access point located at the edge of the shielding layer 120 (i.e., the location of the vertical metal connector 123 (srap) in the figure).

[0055] The inventors also discovered in their research that the intermediate feeding method often leads to the problem of electric field levitation. To solve this technical problem, as a preferred embodiment of the present invention, the radio frequency voltage source 122 feeds the radio frequency voltage signal into the shielding layer 120 through the access point located on the outer edge of the shielding layer 120.

[0056] Specifically, such as Figure 12 As shown, the radio frequency voltage source 122 is connected to the shielding layer 120 through multiple access points, which are evenly distributed along the axial direction at the edge of the shielding layer 120. In this embodiment of the invention, the radio frequency voltage source 122 is connected to the shielding layer 120 through multiple access points evenly distributed at the edge of the shielding layer 120, thereby ensuring the circumferential uniformity of the electric field generated by the shielding layer 120 while solving the problem of the floating electric field fed into the middle.

[0057] The embodiments of the present invention do not specifically limit the number of access points on the edge of the shielding layer 120. For example, optionally, the radio frequency voltage source 122 is connected to the shielding layer 120 through 2 to 8 access points. Further, such as Figure 12 As shown, the radio frequency voltage source 122 can be connected to the shielding layer 120 through four access points.

[0058] To ensure that the heating layer 110 is in close contact with the medium window 200, so as to improve the heat conduction efficiency of the heating layer 110 in transferring heat to the reaction chamber 400 through the medium window 200, preferably, the heating layer 110 is attached to the medium window 200 by an adhesive material.

[0059] To further improve the contact effect between the heating layer 110 and the medium window 200, and to improve the thermal conductivity of the heating layer 110 to transfer heat to the medium window 200, in a preferred embodiment of the present invention, the heating layer 110 is directly formed on the surface of the medium window 200 by printing.

[0060] In this case, in order to reduce the thickness of the heating structure 100 and avoid gaps between the film layers, as a preferred embodiment of the present invention, the heating layer 110, the heat insulation layer 130 and the shielding layer 120 are all fixed to each other by adhesive.

[0061] To ensure the axial alignment accuracy of the shielding layer 120 and the heating layer 110, in a preferred embodiment of the present invention, both the shielding layer 120 and the heating layer 110 have edge positioning hole patterns on their edges. When the shielding layer 120 is rotated so that the projection of the heating wire on the horizontal plane is within the projection of the pattern on the horizontal plane of the shielding layer 120, the edge positioning hole patterns on the two film layers can be aligned and overlapped one by one. Thus, when the shielding layer 120 is bonded to other film layers, the angle can be positioned according to the edge positioning hole patterns to ensure that the heating wire 111 is distributed outside the projection of the fan-shaped hole 121 of the shielding layer 120.

[0062] To improve the maintainability of the heating structure 100, as a preferred embodiment of the present invention, the heating structure 100 can be manufactured independently and then placed on the medium window 200. That is, the shielding layer 120 and the heating layer 110 are first pasted to the opposite two sides of the insulation layer 130 to obtain the heating structure 100, and then the heating structure 100 is placed on the medium window 200.

[0063] In this embodiment of the invention, the heating structure 100 is made as a separate structure independent of the medium window 200, so that the heating structure 100 can be removed and repaired separately when a part of the film layer in the heating structure 100 fails, thereby improving the convenience of maintaining the heating structure 100.

[0064] As a second aspect of the present invention, a semiconductor process apparatus is provided, including a reaction chamber 400, a dielectric window 200, and a radio frequency coil. The dielectric window 200 is disposed on the top of the reaction chamber 400, and the radio frequency coil is disposed on the side of the dielectric window 200 away from the reaction chamber 400 for feeding radio frequency into the reaction chamber 400. The semiconductor process apparatus also includes a heating structure 100 provided in the embodiments of the present invention.

[0065] In the semiconductor process equipment provided by this invention, a heating layer 110 formed by radially winding a heating wire 111 is disposed between the dielectric window 200 and the radio frequency coil. This achieves uniform heating of the surface of the dielectric window 200 while avoiding the generation of eddy currents, thereby improving the uniformity of the temperature field in the reaction chamber 400. Furthermore, the heating layer 110 not only achieves uniform heating of the dielectric window 200, but also reduces the non-uniformity of the axial electric field component generated by the parasitic capacitive coupling component in the inductively coupled discharge of the upper electrode, thereby improving the uniformity of the electric field in the reaction chamber 400. In addition, the heating layer 110, attached to the dielectric window 200, provides a larger heat dissipation space for the upper electrode (radio frequency coil), improving the heat dissipation efficiency of the upper electrode in high-power mode, and thus improving the overall performance of the reaction chamber 400.

[0066] As an optional embodiment of the present invention, such as Figure 4 As shown, the semiconductor process equipment also includes an electrostatic chuck 510, an interface disk 520, an upper matching unit 340, and a lower matching unit 530. The electrostatic chuck 510 and the interface disk 520 are stacked in the reaction chamber 400 along the height direction. The lower matching unit 530 is used to provide a bias signal to the electrostatic chuck 510 through the interface disk 520, and the upper matching unit 340 is used to provide a radio frequency signal to the radio frequency coil (upper electrode).

[0067] As an optional embodiment of the present invention, such as Figure 4 As shown, a wafer transfer port 410 is formed on the side wall of the reaction chamber 400, which is used for wafer carrier devices such as robotic arms to transfer wafers into and out of the reaction chamber 400.

[0068] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A heating structure for semiconductor process equipment, characterized in that, The heating structure is disposed between the dielectric window and the radio frequency coil. The heating structure includes a heating layer and a shielding layer. The heating layer is disposed on the dielectric window, and the shielding layer is disposed above the heating layer. The heating layer includes a heating wire that is radially coiled around the center of the medium window. The heating wire includes multiple spoke segments extending radially along the medium window, and each spoke segment has its two ends connected to the adjacent end of one of the two adjacent spoke segments on both sides. The heating layer is formed by radially winding the heating wire, and the heating wire is evenly spread on the surface of the medium window in both angular and radial directions, and the heating wire has a surface coverage rate of 5% to 20% of the medium window. The shielding layer is made of conductive material and has multiple fan-shaped holes arranged circumferentially on it. The projections of the plurality of fan-shaped holes on the medium window are located within the projection of the heating wire on the medium window; and the width of the fan-shaped holes is set such that the shielding layer covers 40% to 65% of the surface of the medium window.

2. The heating structure according to claim 1, characterized in that, The material of the shielding layer is copper or aluminum.

3. The heating structure according to claim 2, characterized in that, The thickness of the shielding layer is greater than 0.3 mm.

4. The heating structure according to claim 1, characterized in that, The heating structure further includes an insulation layer, which is disposed between the heating layer and the shielding layer.

5. The heating structure according to claim 4, characterized in that, The heating layer, the insulation layer, and the shielding layer are fixed together with adhesive.

6. The heating structure according to any one of claims 1 to 5, characterized in that, The heating structure also includes a heating AC power supply, which is used to provide an AC voltage signal to the heating wire of the heating layer.

7. The heating structure according to any one of claims 1 to 5, characterized in that, The heating structure also includes an RF voltage source and a switching module. The switching module is used to provide an RF voltage signal to the shielding layer during the upper electrode ignition stage, and to ground the shielding layer after ignition.

8. The heating structure according to claim 7, characterized in that, The radio frequency voltage source is connected to the shielding layer through multiple access points, which are distributed at equal intervals along the axial direction at the edge of the shielding layer.

9. A semiconductor process apparatus, comprising a reaction chamber, a dielectric window, and a radio frequency (RF) coil, wherein the dielectric window is disposed at the top of the reaction chamber, and the RF coil is disposed on the side of the dielectric window opposite to the reaction chamber for feeding radio frequency, characterized in that, It also includes a heating structure as described in any one of claims 1-8.

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