Vapor deposition apparatus and vapor deposition method

Abstract

The present disclosure relates to a vapor deposition apparatus and a vapor deposition method. The vapor deposition apparatus includes a carrier on which a substrate is disposed, a deposition chamber in which a deposition process for depositing a deposition material to the substrate is performed, a second chamber in which the carrier on which the substrate completed with the deposition process is carried, and a first chamber including a robot that separates the substrate completed with the deposition process from the carrier in a vacuum state to be transferred from the second chamber to the first chamber, wherein the second chamber is always maintained in a vacuum state.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application relate to a vapor deposition apparatus and a vapor deposition method. BACKGROUND

[0002] An organic light emitting diode display displays an image using an organic light emitting diode that generates light by recombination of an electron and a hole. The organic light emitting diode display has a self-light emitting characteristic, and unlike a liquid crystal display, the organic light emitting diode display does not require a separate light source, and thus can reduce thickness and weight. In addition, the organic light emitting diode display exhibits high quality characteristics such as low power consumption, high brightness, and high response speed.

[0003] A thin organic light emitting diode display can be manufactured by depositing a deposition material such as an organic material and an oxide on a substrate to form a plurality of thin film layers.

[0004] A vapor deposition apparatus for depositing a deposition material on a substrate places the substrate on a carrier, and performs a deposition process while moving the carrier after bringing the carrier into a vacuum chamber. The substrate on which the deposition process has been performed is carried out to the outside together with the carrier in an atmospheric pressure state, and is separated from the carrier. Another substrate is placed on the carrier separated from the substrate on which the deposition process has been performed, and is then brought back into the vacuum chamber, and a deposition process of the substrate is performed.

[0005] The carrier carrying the substrate continues to transition between the vacuum state and the atmospheric pressure state. A phenomenon in which moisture is adsorbed on the carrier in the atmospheric pressure state can occur. As the number of movements increases, the amount of moisture adsorbed on the outside of the carrier can continuously accumulate. The moisture accumulated on the outside of the carrier can be decomposed into oxygen ions and hydrogen ions by plasma during the deposition process, and can be deposited together with the deposition material. These phenomena can cause poor deposition and a change in characteristics of the deposition material.

[0006] In a process of manufacturing an organic light emitting diode display, an oxide such as indium gallium zinc oxide (IGZO) and indium tin oxide (ITO) is deposited on a substrate to form a semiconductor layer or a conductive layer. In the case of the oxide such as IGZO and ITO, H2O adsorbed on the carrier can re-enter in the vacuum state and be decomposed into H + , OH - , and O 2- by plasma while the deposition process is performed, and then be deposited together with IGZO or ITO. At this time, since the oxygen ions are combined with the oxide by an ionic bond, oxygen vacancies decrease, thereby increasing resistance. Thus, the function of the organic light emitting diode display can be deteriorated.

[0007] The above information disclosed in this Background section is only for enhancing the understanding of the background of the present application, and therefore, it can contain information that does not form the prior art that is already known in this country to those of ordinary skill in the art. SUMMARY

[0008] The technical problem to be solved by the present application is to provide a vapor deposition apparatus and a vapor deposition method that prevent moisture from being adsorbed on a carrier.

[0009] A vapor deposition apparatus according to an exemplary embodiment of the present application includes a carrier on which a substrate is seated, a deposition chamber in which a deposition process for depositing a deposition material to the substrate is performed, a second chamber in which the carrier on which the substrate on which the deposition process is completed is carried, and a first chamber including a robot that separates the substrate on which the deposition process is completed from the carrier in a vacuum state to be transferred from the second chamber to the first chamber, wherein the second chamber is always maintained in a vacuum state.

[0010] The vapor deposition apparatus can further include a rotation chamber that is in a vacuum state, is disposed between the deposition chamber and the second chamber, and inserts the carrier to the deposition chamber, a first connection part disposed between the rotation chamber and the second chamber for opening / closing of the rotation chamber and the second chamber, and a second connection part disposed between the first chamber and the second chamber for opening / closing of the rotation chamber and the second chamber.

[0011] An inside of the first chamber can be changed to a vacuum state or an atmospheric pressure state, and the second connection part can be opened when the first chamber and the second chamber are in a vacuum state.

[0012] The carrier can be always exposed to a vacuum state.

[0013] The first chamber can be changed to an atmospheric pressure state and the second chamber can be maintained in a vacuum state in a state in which the second connection part is closed.

[0014] The robot can carry out the substrate on which the deposition process is completed out of the first chamber when the first chamber is in an atmospheric pressure state.

[0015] The robot can carry another substrate into the first chamber when the first chamber is in an atmospheric pressure state, and the first chamber can be changed to a vacuum state after the other substrate is carried into the first chamber.

[0016] The first chamber and the second chamber can be maintained in a vacuum state, and the robot arm can transfer the other substrate to the second chamber to be seated on the carrier.

[0017] The vapor deposition apparatus can further include a transfer chamber in a vacuum state for transferring the carrier to the rotation chamber on which the substrate for which the deposition process is completed is seated.

[0018] The second chamber can be used to rotate the carrier from a first state to a second state or to rotate the carrier from the second state to the first state, and the first state can be a state in which a surface of the carrier on which the substrate is seated faces a direction opposite to a direction of gravity, and the second state can be a state in which the surface of the carrier on which the substrate is seated faces a direction perpendicular to the direction of gravity.

[0019] A vapor deposition apparatus according to another exemplary embodiment of the present application includes a first chamber that becomes a vacuum state or an atmospheric pressure state and in which a substrate is handled, a second chamber in which a carrier for transferring the substrate is provided, a deposition chamber in which a deposition process for depositing a deposition material to the substrate is performed, and a connection part provided between the first chamber and the second chamber and used for opening / closing of the first chamber and the second chamber, wherein the second chamber is always maintained in a vacuum state, and the connection part is opened only when the first chamber and the second chamber are in a vacuum state.

[0020] In a state in which the connection part is closed, the first chamber can become an atmospheric pressure state, and the second chamber is maintained in a vacuum state.

[0021] The first chamber can include a robot arm for seating the substrate on the carrier or separating the substrate from the carrier.

[0022] When the first chamber is in an atmospheric pressure state, the robot arm can carry the substrate into the first chamber, after the substrate is carried into the first chamber, the first chamber can become a vacuum state, and the robot arm can transfer the substrate from the first chamber to the second chamber to seat the substrate on the carrier.

[0023] When the first chamber is in a vacuum state, the robot arm can separate the substrate for which the deposition process is completed from the carrier to be transferred from the second chamber to the first chamber.

[0024] A vapor deposition method according to another exemplary embodiment of the present application includes: carrying a substrate into a first chamber in an atmospheric pressure state; decompressing the first chamber to a vacuum state; placing the substrate on a carrier provided in a second chamber in the vacuum state; transferring the carrier having the substrate placed thereon to a deposition chamber to perform a deposition process in the vacuum state; transferring the substrate on which the deposition process is completed to the second chamber in the vacuum state; separating the substrate on which the deposition process is completed from the carrier in the second chamber in the vacuum state to be transferred to the first chamber in the vacuum state; and maintaining the second chamber in the vacuum state and carrying out the substrate on which the deposition process is completed from the first chamber.

[0025] The second chamber can be maintained in the vacuum state at all times

[0026] An inside of the first chamber can be changed to the vacuum state or the atmospheric pressure state, and a connecting portion between the first chamber and the second chamber can be opened when the first chamber and the second chamber are in the vacuum state.

[0027] The carrier can be always exposed to the vacuum state.

[0028] The vapor deposition method can further include pressurizing the first chamber to the atmospheric pressure state after the substrate on which the deposition process is completed is transferred to the first chamber.

[0029] By preventing moisture from being adsorbed on the carrier, undesirable deposition or a change in characteristics of a deposited material can be prevented. In particular, a problem of increasing resistance of oxides such as IGZO and ITO in a deposition process can be solved by preventing moisture from being adsorbed on the carrier. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 is a block diagram illustrating a vapor deposition apparatus according to an exemplary embodiment of the present application.

[0031] Figure 2 is a block diagram illustrating a deposition chamber of Figure 1 in more detail.

[0032] Figure 3 is a block diagram illustrating a transfer chamber of Figure 1 in more detail.

[0033] Figure 4 is a block diagram illustrating a rotation chamber of Figure 1 in more detail.

[0034] Figure 5A is a block diagram illustrating a rotation chamber of Figure 1 in more detail, and Figure 5Bis a block diagram more specifically illustrating Figure 1 the first chamber and the second chamber of the vapor deposition method according to the comparative example.

[0035] Figure 6 is a flowchart illustrating a vapor deposition method according to an exemplary embodiment of the present application.

[0036] Figures 7 to 11 is a block diagram illustrating the operation state in the first chamber and the second chamber of the vapor deposition method according to Figure 6 the comparative example.

[0037] Figure 12 is a graph simulating the resistance of an oxide deposited on a substrate by using the vapor deposition apparatus according to an exemplary embodiment of the present application.

[0038] Figure 13 is a graph simulating the resistance of an oxide deposited on a substrate according to the comparative example. DETAILED DESCRIPTION

[0039] Hereinafter, embodiments of the present application will be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the application are shown. As those skilled in the art would realize, the described embodiments can be modified in various different ways, all without departing from the spirit or scope of the application.

[0040] Also, in the exemplary embodiments, since the same reference numerals refer to the same elements having the same configuration, the first exemplary embodiment is representatively described, and only the configuration different from the first exemplary embodiment will be described in the other exemplary embodiments.

[0041] Accordingly, the drawings and descriptions are to be regarded as being illustrative in nature and not restrictive, and like reference numerals refer to like elements throughout the specification.

[0042] Also, unless explicitly described to the contrary, the word "comprise" and variations such as "comprises" or "comprising" will be understood to imply the inclusion of stated elements but not the exclusion of any other elements.

[0043] Now, a vapor deposition apparatus according to an exemplary embodiment of the present application will be described with reference to Figures 1 to 5B

[0044] Figure 1 is a block diagram illustrating a vapor deposition apparatus according to an exemplary embodiment of the present application. Figure 2 is a block diagram more specifically illustrating Figure 1 the deposition chamber of the vapor deposition apparatus according to the comparative example. Figure 3 is a block diagram more specifically illustrating Figure 1 the transport chamber of the vapor deposition apparatus according to the comparative example. Figure 4 is a block diagram more specifically illustrating​Figure 1 A block diagram of the traverse chamber. Figure 5A To show in more detail Figure 1 A block diagram of the rotating chamber, and Figure 5B To show in more detail Figure 1 A block diagram of the first and second chambers.

[0045] Figures 1 to 5A The vapor deposition apparatus 10 is shown on a plane, and Figure 5B The vapor deposition apparatus 10 is shown from the side. "In a plane" can refer to the view of a plane parallel to the first direction D1 and the second direction D2 intersecting the first direction D1, and can also indicate the view of the vapor deposition apparatus 10 from top to bottom. "From the side" can refer to the view of a plane parallel to a third direction D3, and can also indicate the view of the vapor deposition apparatus 10 from the side. The third direction D3 can be perpendicular to the first direction D1 and the second direction D2.

[0046] Reference Figures 1 to 5B The vapor deposition apparatus 10 includes a deposition chamber 110, a transport chamber 120, a transverse chamber 130, a rotating chamber 140, an inlet / outlet chamber, and a conveying unit 300. The inlet / outlet chamber includes a first chamber 150 and a second chamber 160.

[0047] The transfer unit 300 is used to transfer the substrate S. The transfer unit 300 includes: a carrier 310 on which the substrate S is disposed; and transfer members 321 and 322 for transporting the carrier 310. The transfer members 321 and 322 may include a first transfer member 321 disposed in / in / inside the deposition chamber 110 and a second transfer member 322 disposed in / in / inside the transport chamber 120.

[0048] The substrate S can be a display substrate used in a display device such as an organic light-emitting diode (OLED) display. The substrate S can include materials such as glass and plastic. The substrate S can be a parent substrate defining multiple substrate regions for multiple display devices. However, the invention is not limited thereto, and the substrate S can be a display substrate used in only one display device.

[0049] Deposition chamber 110 is a chamber in which a deposition process is performed. Deposition chamber 110 may be a vacuum chamber. Deposition chamber 110 may include multiple unit chambers 111. Figure 1 and Figure 2 The diagram shows four unit chambers 111, but the number of unit chambers 111 is not limited.

[0050] The first connection part 201 or the second connection part 202 can be provided between adjacent chambers. The first connection part 201 is provided between chambers in a vacuum state to open and close each chamber. The first connection part 201 can be an open / close shutter. The second connection part 202 is provided between adjacent chambers having different atmospheric pressures. The second connection part 202 is used to maintain one chamber in a vacuum state and the other chamber in an atmospheric pressure state when one of the adjacent chambers is in a vacuum state and the other is in an atmospheric pressure state. The second connection part 202 can be an open / close shutter including a valve.

[0051] The first connection part 201 can be provided between the deposition chamber 110 and the horizontal transfer chamber 130, between the transport chamber 120 and the horizontal transfer chamber 130, between the deposition chamber 110 and the rotation chamber 140, between the transport chamber 120 and the rotation chamber 140, between the rotation chamber 140 and the second chamber 160, and between the plurality of cell chambers 111. That is, the deposition chamber 110, the transport chamber 120, the horizontal transfer chamber 130, the rotation chamber 140, and the second chamber 160 can each be a vacuum chamber.

[0052] The second connection part 202 can be provided between the first chamber 150 and the second chamber 160 and between the first chamber 150 and the outside where the substrate S is carried in and out. The inside of the first chamber 150 can become an atmospheric pressure state or a vacuum state.

[0053] The first transfer member 321 extends in a direction in which the plurality of cell chambers 111 are arranged. For example, the plurality of cell chambers 111 can be arranged in a first direction D1, and the first transfer member 321 can extend in the first direction D1. The carrier 310 can move by being coupled to the first transfer member 321. The carrier 310 can move along the first transfer member 321 in a direction from the rotation chamber 140 toward the horizontal transfer chamber 130. The substrate S that is the object of the deposition process is disposed on the carrier 310.

[0054] Each of the plurality of cell chambers 111 can include a deposition source unit 113. The deposition source unit 113 can discharge a deposition material to a substrate S side to deposit a thin film on one surface of the substrate S facing the deposition source unit 113. The deposition material can include a material for forming an oxide such as IGZO and ITO. The deposition source unit 113 can include a crucible containing the deposition material, a heater vaporizing the deposition material by heating the crucible, and a nozzle discharging the vaporized deposition material to the substrate S side. Hereinafter, one surface of the substrate S on which a thin film is deposited is referred to as a deposition surface of the substrate S.

[0055] The carrier 310 allows the substrate S to stand upright and move, such that the deposition surface of the substrate S is parallel to the direction of gravity. The nozzle of the deposition source unit 113 can face the deposition surface of the substrate S and can discharge the deposited material in a direction perpendicular to the direction of gravity. In other words, the carrier 310 allows the deposition surface of the substrate S to stand upright and be moved in a third direction D3. The nozzle of the deposition source unit 113 can discharge the deposited material toward the deposition surface of the substrate S in a second direction D2.

[0056] However, the present invention is not limited thereto, and the carrier 310 can place and move the substrate S such that the deposition surface of the substrate S faces the direction of gravity, and the deposition source unit 113 can be disposed below the substrate S to face the deposition surface of the substrate S.

[0057] The transport chamber 120 is the chamber that transports the substrate S, after the deposition process has been completed, to the rotating chamber 140. The transport chamber 120 may be a vacuum chamber. A second transport member 322 disposed within the transport chamber 120 extends in a direction from the transverse chamber 130 toward the rotating chamber 140. That is, the second transport member 322 may extend in a first direction D1. The substrate S, after the deposition process has been completed, is mounted on a carrier 310, and the carrier 310 may be moved by coupling to the second transport member 322. The carrier 310 may move along the second transport member 322 in a direction from the transverse chamber 130 toward the rotating chamber 140.

[0058] The transverse displacement chamber 130 is a chamber disposed between the deposition chamber 110 and the transport chamber 120. For example, in an embodiment, such as Figure 1 As shown, a transverse transfer chamber 130 may be disposed at one end of the deposition chamber 110 and the transport chamber 120. The transverse transfer chamber 130 may be a vacuum chamber. The transverse transfer chamber 130 is connected to the deposition chamber 110 via a first connecting portion 201 and to the transport chamber 120 via another first connecting portion 201. The transverse transfer chamber 130 moves the carrier 310 from the deposition chamber 110 into the carrier 310, on which a substrate S having undergone the deposition process is placed. Additionally, the transverse transfer chamber 130 can move the carrier 310 from the transverse transfer chamber 130 into the transport chamber 120, on which the substrate S having undergone the deposition process is placed. The transverse transfer chamber 130 may include a first transfer unit 331 for moving the moved carrier 310 to the side of the transport chamber 120.

[0059] On the other hand, according to an exemplary embodiment, the transverse transfer chamber 130 may be omitted. If the transverse transfer chamber 130 is omitted, the deposition chamber 110 and the transport chamber 120 may be directly connected via the first connection portion 201. In the deposition chamber 110, a carrier 310 on which the substrate S, having undergone the deposition process, is placed may be directly transferred to the transport chamber 120 via the first connection portion 201.

[0060] The rotating chamber 140 is used to repeatedly insert the carrier 310, which is transported through the delivery chamber 120, into the deposition chamber 110. The rotating chamber 140 can be located between the deposition chamber 110 and the second chamber 160, and between the delivery chamber 120 and the second chamber 160. The rotating chamber 140 can be a vacuum chamber. The rotating chamber 140 moves the carrier 310, on which the substrate S, which has undergone the deposition process, is placed, from the delivery chamber 120, and then moves the carrier 310 out of the rotating chamber 140 to the second chamber 160. Alternatively, the rotating chamber 140 can move the carrier 310, on which a new substrate S is placed, and then move the carrier 310 to the deposition chamber 110 to move it out of the rotating chamber 140. The rotating chamber 140 may include a second transfer unit 332, which moves the carrier 310, on which the new substrate S is placed, to the deposition chamber 110 side.

[0061] The second chamber 160 is connected to the rotating chamber 140 via the first connecting portion 201. For example, as Figure 5B As shown, the second chamber 160 is used to rotate the carrier 310 on which the substrate S is mounted from the first state ST1 to the second state ST2, and to rotate the carrier 310 on which the substrate S is mounted from the second state ST2 to the first state ST1. The second chamber 160 may be a vacuum chamber. The first state ST1 is such that the surface of the carrier 310 on which the substrate S is mounted faces a direction opposite to the direction of gravity, and the substrate S is mounted on the carrier 310 such that the deposition surface of the substrate S faces a direction opposite to the direction of gravity. The first state ST1 may be in a state in which the deposition surface of the substrate S is parallel to the first direction D1 and the second direction D2, or in a state in which the deposition surface of the substrate S faces a third direction D3. The second state ST2 is such that the surface of the carrier 310 on which the substrate S is mounted faces a direction perpendicular to the direction of gravity, and the substrate S is mounted on the carrier 310 such that the deposition surface of the substrate S faces a direction perpendicular to the direction of gravity. The second state ST2 may be in a state in which the deposition surface of the substrate S is parallel to the third direction D3.

[0062] The first state ST1 can be a state for mounting or separating the substrate S on the carrier 310. The second state ST2 can be a state of standing the substrate S to continue the deposition process. The second chamber 160 can rotate the carrier 310 by 90 degrees between the first state ST1 and the second state ST2. The second chamber 160 is a swing chamber that rotates the carrier 310.

[0063] The first chamber 150 is connected to the second chamber 160 through the second connection part 202. The first chamber 150 can include a robot 155 that separates the substrate S, for which the deposition process has been completed, from the carrier 310 and sets a new substrate S on the carrier 310. The first chamber 150 can be referred to as a mechanical chamber including the robot 155. The first chamber 150 can be changed to a vacuum state or an atmospheric pressure state.

[0064] When the first chamber 150 is in the vacuum state, the second connection part 202 between the first chamber 150 and the second chamber 160 is opened, and the first chamber 150 and the second chamber 160 can be maintained in the vacuum state. The robot 155 can separate the substrate S, for which the deposition process has been completed, from the carrier 310 in the vacuum state to transfer the substrate S from the second chamber 160 to the first chamber 150.

[0065] In a state in which the second connection part 202 between the first chamber 150 and the second chamber 160 is closed, the first chamber 150 is changed to the atmospheric pressure state, and the second chamber 160 is maintained in the vacuum state. When the first chamber 150 is in the atmospheric pressure state, the second connection part 202 that is communicated to the outside is opened, and the robot 155 can carry the substrate S, for which the deposition process has been completed, out of the first chamber 150 to the outside.

[0066] The robot 155 can carry a new substrate S into the first chamber 150 from the outside. After the new substrate S is carried into the first chamber 150, the first chamber 150 is changed to the vacuum state. When the first chamber 150 is in the vacuum state, the second connection part 202 between the first chamber 150 and the second chamber 160 can be opened, and the first chamber 150 and the second chamber 160 can be maintained in the vacuum state. The robot 155 can transfer the new substrate S to the second chamber 160 in the vacuum state to place the new substrate S on the carrier 310 in the first state ST1.

[0067] As described above, the carrier 310 is always disposed inside the chamber in a vacuum state, and is not exposed to an atmospheric pressure state. That is, the carrier 310 is always exposed to a vacuum state. Accordingly, it is possible to prevent a phenomenon in which moisture is adsorbed on the carrier 310 when the carrier 310 is exposed to an atmospheric pressure state. It is possible to solve a problem in which the resistance of oxides such as IGZO and ITO increases due to moisture adsorbed on the carrier 310 in a deposition process.

[0068] Next, referring to the above-described Figures 6 to 11 In conjunction with Figures 1 to 5B , a vapor deposition method using the vapor deposition apparatus 10 is described.

[0069] Figure 6 is a flowchart illustrating a vapor deposition method according to an exemplary embodiment of the present application. Figures 7 to 11 is a block diagram illustrating an operating state in the first chamber and the second chamber according to Figure 6 the vapor deposition method. Figures 7 to 11 indicates the first chamber 150 and the second chamber 160 in the vapor deposition apparatus 10 (see Figure 1 ) viewed on a side surface.

[0070] Referring to Figures 6 to 11 , the vapor deposition apparatus 10 (see Figure 1 ) proceeds with a carry-in step to carry in an external substrate S. Figures 7 to 11 indicates a step for carrying in the substrate S to a carry-out / carry-in chamber including the first chamber 150 and the second chamber 160.

[0071] As shown in Figure 7 , when the first chamber 150 is in an atmospheric pressure state, the second connecting portion 202 between the outside and the first chamber 150 is opened. The robot arm 155 is ready to lift the substrate S prepared in the outside, and is ready to transfer the substrate S to the first chamber 150.

[0072] The robot arm 155 carries in the substrate S prepared in the outside to the first chamber 150. That is, the robot arm 155 carries in the substrate S to the first chamber 150 in an atmospheric pressure state (S11). During a step for carrying in the substrate S prepared in the outside to the first chamber 150, the second connecting portion 202 between the first chamber 150 and the second chamber 160 is in a closed state, and the second chamber 160 maintains a vacuum state.

[0073] As shown in Figure 8As shown in FIG. 1, after the substrate S is carried into the first chamber 150, the second connection portion 202 between the outside and the first chamber 150 is closed, and the first chamber 150 becomes a vacuum state. That is, after the substrate S is carried into the first chamber 150, the first chamber 150 is depressurized to a vacuum state (S12).

[0074] As shown in FIG. 1, after the substrate S is carried into the first chamber 150, the second connection portion 202 between the outside and the first chamber 150 is closed, and the first chamber 150 becomes a vacuum state. That is, after the substrate S is carried into the first chamber 150, the first chamber 150 is depressurized to a vacuum state (S12). Figure 9 As shown in FIG. 1, after the substrate S is carried into the first chamber 150, the second connection portion 202 between the outside and the first chamber 150 is closed, and the first chamber 150 becomes a vacuum state. That is, after the substrate S is carried into the first chamber 150, the first chamber 150 is depressurized to a vacuum state (S12).

[0075] Figure 10 As shown in FIG. 1, after the substrate S is carried into the first chamber 150, the second connection portion 202 between the outside and the first chamber 150 is closed, and the first chamber 150 becomes a vacuum state. That is, after the substrate S is carried into the first chamber 150, the first chamber 150 is depressurized to a vacuum state (S12). Figure 1 As shown in FIG. 1, after the substrate S is carried into the first chamber 150, the second connection portion 202 between the outside and the first chamber 150 is closed, and the first chamber 150 becomes a vacuum state. That is, after the substrate S is carried into the first chamber 150, the first chamber 150 is depressurized to a vacuum state (S12).

[0076] Figure 5B As shown in FIG. 1, after the substrate S is carried into the first chamber 150, the second connection portion 202 between the outside and the first chamber 150 is closed, and the first chamber 150 becomes a vacuum state. That is, after the substrate S is carried into the first chamber 150, the first chamber 150 is depressurized to a vacuum state (S12). Figure 11 As shown in FIG. 1, after the substrate S is carried into the first chamber 150, the second connection portion 202 between the outside and the first chamber 150 is closed, and the first chamber 150 becomes a vacuum state. That is, after the substrate S is carried into the first chamber 150, the first chamber 150 is depressurized to a vacuum state (S12).

[0077] As shown in FIG. 1, after the substrate S is carried into the first chamber 150, the second connection portion 202 between the outside and the first chamber 150 is closed, and the first chamber 150 becomes a vacuum state. That is, after the substrate S is carried into the first chamber 150, the first chamber 150 is depressurized to a vacuum state (S12).

[0078] Figures 1 to 5B As shown in FIG. 1, after the substrate S is carried into the first chamber 150, the second connection portion 202 between the outside and the first chamber 150 is closed, and the first chamber 150 becomes a vacuum state. That is, after the substrate S is carried into the first chamber 150, the first chamber 150 is depressurized to a vacuum state (S12).

[0079] As shown in FIG. 1, after the substrate S is carried into the first chamber 150, the second connection portion 202 between the outside and the first chamber 150 is closed, and the first chamber 150 becomes a vacuum state. That is, after the substrate S is carried into the first chamber 150, the first chamber 150 is depressurized to a vacuum state (S12).

[0080] ​​​The carrier 310 on which the substrate S is seated is carried into the deposition chamber 110, and a deposition process is performed on the substrate S seated on the carrier 310 in the deposition chamber 110 (S16). The deposition process is performed while the carrier 310 on which the substrate S is seated moves to the plurality of cell chambers 111 included in the deposition chamber 110 in a vacuum state. While the deposition process is performed in each of the cell chambers 111, the first connection portion 201 provided between the cell chambers 111 is maintained in a closed state so that the deposition material can not be mixed between the cell chambers 111. The first connection portion 201 is opened as the carrier 310 on which the substrate S is seated moves along the first transfer member 321. The carrier 310 on which the substrate S on which the deposition process is completed in the deposition chamber 110 is transferred to the transfer chamber 120 in a vacuum state.

[0081] The transfer chamber 130 transfers the carrier 310 on which the substrate S on which the deposition process is completed is seated to the second chamber 160 in a vacuum state (S18). The rotation chamber 140 provided between the transfer chamber 120 and the second chamber 160 can transfer the carrier 310 on which the substrate S on which the deposition process is completed is seated to the second chamber 160.

[0082] The transfer chamber 130 transfers the carrier 310 on which the substrate S on which the deposition process is completed is seated to the second chamber 160 in a vacuum state (S18). The rotation chamber 140 provided between the transfer chamber 120 and the second chamber 160 can transfer the carrier 310 on which the substrate S on which the deposition process is completed is seated to the second chamber 160.

[0083] If the carrier 310 on which the substrate S on which the deposition process is completed is seated is transferred to the second chamber 160, a carrying-out step of the substrate S is performed. The step for carrying out the substrate S can be performed in an order opposite to that of the step for carrying in the substrate S shown in Figures 7 to 11

[0084] That is, as shown in Figure 11 the carrier 310 on which the substrate S is seated in the second state ST2 is transferred to the second chamber 160. In addition, as shown in Figure 10 the carrier 310 in the second state ST2 is rotated to the first state ST1 in the second chamber 160.

[0085] Further, as shown in Figure 9 the second connection portion 202 between the first chamber 150 and the second chamber 160 is opened, and the mechanical arm 155 separates the substrate S from the carrier 310 in a state in which the first chamber 150 and the second chamber 160 are maintained in a vacuum state. The mechanical arm 155 transfers the substrate S from the second chamber 160 to the first chamber 150 (S19).​

[0086] Further, as shown in Figure 8 , the second connecting portion 202 between the first chamber 150 and the second chamber 160 is closed, and the second chamber 160 is maintained in a vacuum state.

[0087] In addition, as shown in Figure 7 , in a state in which the second chamber 160 is maintained in a vacuum state, after the first chamber 150 is pressurized using atmospheric pressure, the second connecting portion 202 between the first chamber 150 and the outside is opened, and the substrate S is carried out from the first chamber 150 to the outside (S20).

[0088] As described above, while the step of carrying out the substrate S through the first chamber 150 and the second chamber 160 is performed, the carrier 310 is placed in a vacuum state without being exposed to an atmospheric pressure state.

[0089] Figure 12 is a graph simulating the resistance of an oxide deposited on a substrate by using a vapor deposition apparatus according to an exemplary embodiment of the present application.

[0090] Referring to Figure 1 , Figure 7 , and Figure 12 , in order to place the carrier 310 inside a chamber in a vacuum state at all times by using the vapor deposition apparatus 10 according to an exemplary embodiment of the present application, the resistance of an oxide deposited on a substrate S was measured as a simulation result when the carrier 310 was repeatedly carried in a deposition process. Even if the number of depositions increases, it can be confirmed that the resistance of the oxide is almost uniformly distributed.

[0091] Figure 13 is a graph simulating the resistance of an oxide deposited on a substrate according to a comparative example.

[0092] Referring to Figure 13 , in order to place a substrate on a carrier in an atmospheric pressure state, the resistance of an oxide deposited on a substrate was measured as a simulation result when the carrier was repeatedly carried in a deposition process. Even if the number of depositions increases, it can be confirmed that the resistance of the oxide increases. In order to maintain the resistance of the oxide below a certain level, the carrier must be periodically replaced, and in this case, the time and cost required for the deposition process increase.

[0093] The detailed description provided above in connection with the appended drawings is intended as a description of exemplary embodiments of the present application and is not intended to limit the scope of the application. The detailed description includes specific details for the purpose of providing a thorough understanding of various concepts. However, it will be apparent to those skilled in the art that the embodiments described herein are

[0094] <Explanation of symbols>

[0095] 10: vapor deposition apparatus 110: deposition chamber

[0096] 120: transport chamber 130: transfer chamber

[0097] 140: rotation chamber 150: first chamber

[0098] 160: second chamber 201: first connection portion

[0099] 202: second connection portion 310: carrier

[0100] S: substrate

Claims

1. A vapour deposition apparatus, wherein, The vapor deposition apparatus includes: a carrier on which a substrate is seated; a deposition chamber in which a deposition process for depositing a deposition material to the substrate is performed; a second chamber in which the carrier on which the substrate completed with the deposition process is seated is carried; a first chamber including a robot that separates the substrate completed with the deposition process from the carrier in a vacuum state to be transferred from the second chamber to the first chamber, and a rotation chamber in a vacuum state, which is disposed between the deposition chamber and the second chamber, and which inserts the carrier loaded with a new substrate into the deposition chamber and carries out the carrier on which the substrate completed with the deposition process is seated to the second chamber, wherein the second chamber is always maintained in a vacuum state.

2. The vapor deposition apparatus of claim 1, wherein, The vapor deposition apparatus further includes: a first connection part disposed between the rotation chamber and the second chamber for opening / closing of the rotation chamber and the second chamber; and a second connection part disposed between the first chamber and the second chamber for opening / closing of the first chamber and the second chamber.

3. The vapor deposition apparatus according to claim 2, wherein an inside of the first chamber becomes a vacuum state or an atmospheric pressure state, and the second connection part is opened when the first chamber and the second chamber are in a vacuum state.

4. The vapor deposition apparatus according to claim 3, wherein the carrier is always exposed to a vacuum state.

5. The vapor deposition apparatus according to claim 3, wherein in a state that the second connection part is closed, the first chamber becomes an atmospheric pressure state and the second chamber is maintained in a vacuum state.

6. The vapor deposition apparatus according to claim 5, wherein when the first chamber is in an atmospheric pressure state, the robot carries out the substrate completed with the deposition process from the first chamber.

7. The vapor deposition apparatus according to claim 6, wherein when the first chamber is in an atmospheric pressure state, the robot carries another substrate into the first chamber, and after the other substrate is carried into the first chamber, the first chamber becomes a vacuum state.

8. The vapor deposition apparatus according to claim 7, wherein the first chamber and the second chamber are maintained in a vacuum state, and the robot transfers the other substrate to the second chamber to be seated on the carrier.

9. The vapor deposition apparatus of claim 2, wherein, The vapor deposition apparatus further includes: a transfer chamber in a vacuum state for transferring the carrier on which the substrate completed with the deposition process is seated to the rotation chamber.

10. The vapor deposition apparatus according to claim 1, wherein the second chamber is used to rotate the carrier from a first state to a second state, or to rotate the carrier from the second state to the first state, and the first chamber is used to transfer the substrate completed with the deposition process from the second chamber to the first chamber, or to transfer another substrate from the first chamber to the second chamber. the first state is a state in which a surface of the carrier on which the substrate is disposed faces a direction opposite to a direction of gravity, and the second state is a state in which the surface of the carrier on which the substrate is disposed faces a direction perpendicular to the direction of gravity.

11. A vapour deposition apparatus wherein, The vapor deposition apparatus includes: a first chamber that becomes a vacuum state or an atmospheric pressure state and in which a substrate is carried; a second chamber in which a carrier for transferring the substrate is provided; a deposition chamber in which a deposition process for depositing a deposition material to the substrate is performed; a rotation chamber that is in a vacuum state and is provided between the deposition chamber and the second chamber; and a connection portion that is provided between the first chamber and the second chamber and is used for opening / closing of the first chamber and the second chamber, wherein the second chamber always remains in a vacuum state, and the connection portion is opened only when the first chamber and the second chamber are in a vacuum state, wherein the rotation chamber inserts the carrier on which a new substrate is loaded into the deposition chamber and carries out the carrier on which the substrate on which the deposition process is completed is disposed to the second chamber.

12. The vapor deposition apparatus according to claim 11, wherein in a state in which the connection portion is closed, the first chamber becomes an atmospheric pressure state, and the second chamber remains in a vacuum state.

13. The vapor deposition apparatus according to claim 12, wherein the first chamber includes a mechanical arm for disposing the substrate on the carrier or separating the substrate from the carrier.

14. The vapor deposition apparatus according to claim 13, wherein when the first chamber is in an atmospheric pressure state, the mechanical arm carries the substrate into the first chamber; after the substrate is carried into the first chamber, the first chamber becomes a vacuum state; and the mechanical arm transfers the substrate from the first chamber to the second chamber to dispose the substrate on the carrier.

15. The vapor deposition apparatus according to claim 13, wherein when the first chamber is in a vacuum state, the mechanical arm separates the substrate on which the deposition process is completed from the carrier to be transferred from the second chamber to the first chamber.

16. A vapour deposition method in which, The vapor deposition method includes: carrying a substrate into a first chamber in an atmospheric pressure state; depressurizing the first chamber to a vacuum state; disposing the substrate on a carrier provided in a second chamber in a vacuum state; transferring the carrier on which the substrate is disposed to a deposition chamber in a vacuum state via a rotation chamber to perform a deposition process, the rotation chamber being in a vacuum state and being provided between the deposition chamber and the second chamber; transferring the substrate on which the deposition process is completed to the second chamber in a vacuum state via the rotation chamber; the substrate on which the deposition process is completed is separated from the carrier in the second chamber in a vacuum state to be transferred to the first chamber in a vacuum state; and the second chamber is maintained in a vacuum state and the substrate on which the deposition process is completed is carried out from the first chamber.

17. The vapor deposition method according to claim 16, wherein the second chamber is always maintained in a vacuum state.

18. The vapor deposition method according to claim 17, wherein the inside of the first chamber is changed to a vacuum state or an atmospheric pressure state, and a connecting portion between the first chamber and the second chamber is opened when the first chamber and the second chamber are in a vacuum state.

19. The vapor deposition method according to claim 18, wherein the carrier is always exposed to a vacuum state.

20. The vapor deposition method according to claim 16, wherein, the vapor deposition method further includes: after the substrate on which the deposition process is completed is transferred to the first chamber, the first chamber is pressurized to an atmospheric pressure state.

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