Heterogeneous integration of complementary metal oxide semiconductors and MEMS sensors

By forming a bonding layer between CMOS and MEMS substrates, the problem of limited thermal budget when integrating MEMS IR detectors with CMOS is solved, and compact and high-performance integration is achieved, suitable for a variety of applications.

CN113767063BActive Publication Date: 2025-01-03MERIDIAN INNOVATION PTE LTD
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Patent Information

Application Number
CN202080027511.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2019-04-01
Filing Date
2020-04-01
Publication Date
2025-01-03
Estimated Expiration
2040-04-01

AI Technical Summary

Technical Problem

Existing MEMS IR detectors face limited thermal budgets when integrating with CMOS, resulting in huge challenges in device design and manufacturing, making it difficult to achieve compact and high-performance integration.

Method used

Using the method of integrating MEMS modules and CMOS devices, a bonding layer is formed between the CMOS substrate and the MEMS substrate to form an integrated substrate stack, and the device is completed through post-integration processing to achieve compact and high-performance integration of MEMS and CMOS. .

Benefits of technology

It realizes compact and high-performance integration of MEMS modules and CMOS devices, improves the performance and application potential of the device, and is suitable for a variety of applications such as thermal imagers.

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Abstract

A complementary metal-oxide-semiconductor (CMOS) device integrated with a microelectromechanical system (MEMS) component in the MEMS region is disclosed. The MEMS component is, for example, an infrared (IR) thermal sensor. The MEMS sensor is heterogeneously integrated on the CMOS device. For example, post-CMOS compatibility issues are mitigated by bonding a CMOS wafer having CMOS devices, interconnects, and partially processed MEMS components to a MEMS wafer having a MEMS structure. The post-integration process for completing the device includes forming contacts for interconnecting the sensor to the CMOS component and encapsulating the device using a wafer-level vacuum packaging cover wafer.
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