Microsystem packaging structure with integrated three-dimensional interconnection and heat dissipation

Abstract

The present invention provides a microsystem packaging structure with three-dimensional interconnection and heat dissipation integration, including a heat dissipation housing, a silicon-based component, a transfer circuit board, a packaging cover plate and a button connector; the heat dissipation housing is connected to the packaging cover plate to form a closed cavity for accommodating the silicon-based component and the transfer circuit board connected to each other, the silicon-based component is connected to the heat dissipation housing, and the transfer circuit board is connected to the packaging cover plate; the button connector includes a first type and a second type; the first type penetrates the bottom wall of the heat dissipation housing and is connected to the silicon-based component, and the heat dissipation housing is embedded with a flow channel for circulating coolant; the second type penetrates the packaging cover plate and is connected to the transfer circuit board; the silicon-based component realizes electrical interconnection between the button connector, the transfer circuit board and the silicon-based component through a metal layer, a copper through hole, a silicon through hole and a BGA solder ball array package, and the button connector is used for the silicon-based component to transmit signals with the outside world. The structure can simultaneously have high integration, high thermal conductivity, high practicality and high service life.

Description

Technical Field

[0001] The present invention relates to the technical field of microsystem three-dimensional interconnection and heat dissipation, and in particular to a microsystem packaging structure integrating three-dimensional interconnection and heat dissipation. Background Art

[0002] At present, the integration, high integration and miniaturization of weapon equipment electronic systems are important development trends. In the RF front end, the use of microwave multilayer board integrated manufacturing multi-chip module (MCM), or the use of LTCC (Low Temperature Co-fired Ceramic) as a representative, based on the traditional thick and thin film process hybrid integration means to achieve three-dimensional interconnection, and the use of high temperature co-fired ceramic HTCC (High Temperature Co-fired Ceramic), multi-layer high-precision BT type PCB and other technologies to achieve RF microsystems are gradually becoming the mainstream of application.

[0003] In recent years, thanks to the development of microelectronics technology and with the development of bulk silicon micromachining technology, wafer-level assembly (WSA) is used to form ultra-compact and ultra-micro active sub-arrays, passive on-chip integration (IPD), on-chip high-density copper interconnect multi-layer wiring, TSV and wafer bonding are realized under wafer technology, and the development of RF microsystems based on the new process of silicon-based MEMS (Micro-Electro-Mechanical System) has become a new option.

[0004] For RF microsystem design, heat dissipation has always been a research focus, especially in the field of missile-borne phased array radars, where the heat accumulation effect seriously restricts the development of high-power RF microsystems, thereby affecting the detection distance of the radar. The power density of the three-dimensional integration of the microsystem has increased significantly, and various chips, components, interconnections, power supply systems, etc. in the system are closely arranged. The thermal problem is serious and coupled and influenced by electromagnetic problems, becoming a key factor restricting the working performance of high-density integrated systems.

[0005] In the design of RF microsystems, there are currently several heat dissipation technologies, but all of them have various problems:

[0006] 1) Heat pipes. Heat pipes come in various forms, including folding, circulating, and vibrating types, but their integration is not high.

[0007] 2) Spray heat dissipation, which directly sprays heat onto the heat source, requires low pressure and is not very practical.

[0008] 3) Thermoelectric cooling, which uses the thermoelectric effect for cooling, but has low thermal conductivity efficiency.

[0009] 4) Microfluidics use gas or liquid to conduct heat, which is highly efficient, but needs to be completed simultaneously with the device or substrate preparation process, is highly specialized, and has limited engineering applicability.

[0010] Therefore, it is necessary to provide a design of a radio frequency microsystem that can combine high integration, high thermal efficiency, high practicality and long service life. Summary of the invention

[0011] The present invention provides a microsystem packaging structure integrating three-dimensional interconnection and heat dissipation, which can simultaneously have high integration, high thermal conductivity, high practicality and long service life.

[0012] To achieve the above-mentioned and other related purposes, the present invention provides a microsystem packaging structure with integrated three-dimensional interconnection and heat dissipation, including a heat dissipation housing, a silicon-based component, a transfer circuit board, a packaging cover, and a wool button connector;

[0013] The heat dissipation housing is connected to the packaging cover plate to form a closed cavity, and the closed cavity is used to accommodate the silicon-based component and the adapter circuit board connected to each other, wherein the silicon-based component is connected to the heat dissipation housing, and the adapter circuit board is connected to the packaging cover plate;

[0014] The fur button connector includes a first type of fur button connector and a second type of fur button connector;

[0015] The first type of wool button connector penetrates the bottom wall of the heat dissipation housing and is connected to the silicon-based component, and a flow channel is embedded in the heat dissipation housing, and the flow channel is used to circulate the cooling liquid;

[0016] The second type of fur button connector penetrates the packaging cover plate and is connected to the adapter circuit board;

[0017] The silicon-based component realizes electrical interconnection among the wool button connector, the adapter circuit board and the silicon-based component through a metal layer, copper through-holes, silicon through-holes and BGA solder ball array packaging. The wool button connector is used for signal transmission between the silicon-based component and the outside world.

[0018] Preferably, the first type of fur button connector includes a first fur button RF coaxial electrical connector, the second type of fur button connector includes a second fur button RF coaxial electrical connector and a fur button multi-core low-frequency connector, the first fur button RF coaxial electrical connector and the second fur button RF coaxial electrical connector are used for external RF microwave signal transmission, and the fur button multi-core low-frequency connector is used for external low-frequency control signal and electrical signal transmission.

[0019] Preferably, the silicon-based component includes an antenna surface and an excitation surface relative to each other, the antenna surface is provided with a radio frequency transceiver port for connecting to the first wool button radio frequency coaxial electrical connector, and the excitation surface is connected to the adapter circuit board through BGA packaging technology.

[0020] Preferably, the first fur button RF coaxial electrical connector includes a first SMP RF connector and a first fur button end which are connected to each other and respectively located at both ends, and an internal filling medium, the first SMP RF connector is an external RF microwave signal interface, and the first fur button end is in elastic contact with the RF transceiver port.

[0021] Preferably, the second fur button RF coaxial electrical connector includes a second SMP RF connector and a second fur button end which are connected to each other and respectively located at both ends, and an internal filling medium, the two ends of the fur button multi-core low-frequency connector are respectively a low-frequency J30J end and a third fur button end, the second SMP RF connector is an external RF microwave signal interface, the low-frequency J30J end is an external low-frequency control signal and electrical signal interface, and the second fur button end and the third fur button end are elastically interconnected with the pads on the adapter circuit board.

[0022] Preferably, the silicon-based component is embedded with a silicon adapter plate, and the silicon connecting plate includes a through silicon via extending therethrough;

[0023] A multi-layer dielectric layer is arranged on one end surface of the silicon adapter plate, and a plurality of copper wiring metals are arranged on the upper and lower surfaces of the dielectric layer, and the copper wiring metals on the upper and lower surfaces are interconnected through copper through holes between the layers, and one end of the silicon through hole is connected to a copper wiring metal on the upper surface;

[0024] The other end surface of the silicon adapter plate serves as the antenna surface of the silicon-based component, and the other end of the through silicon via is connected to the RF transceiver port.

[0025] Preferably, a power amplifier chip is bonded to a corresponding pad on a copper wiring metal arranged on the upper surface of the dielectric layer through nano silver paste, and the power amplifier chip is also connected to other pads on the copper wiring metal arranged on the upper surface of the dielectric layer through bonding wires.

[0026] Preferably, the surface of the heat dissipation housing is provided with a plurality of first radio frequency openings arranged in an array, and the flow channel passes between every two rows of the first radio frequency openings;

[0027] The transfer circuit board comprises a relative top metal layer and a bottom metal layer, the top metal layer is provided with a BGA solder ball corresponding to the excitation surface pad, and the bottom metal layer is provided with a pad interconnected with the second fur button RF coaxial electrical connector and the fur button multi-core low-frequency connector;

[0028] The packaging cover plate is provided with a second radio frequency opening and a low frequency opening, the second radio frequency opening is used to fix the second fur button radio frequency coaxial electrical connector, and the low frequency opening is used to fix the fur button multi-core low frequency connector.

[0029] Preferably, the heat dissipation shell is made of 70% Si-Al high silicon aluminum alloy material with a thermal expansion coefficient of 7×10-6 / °C, the adapter circuit board is made of FR4 printed circuit board, and the packaging cover is made of 27% Si-Al high silicon aluminum alloy material.

[0030] Preferably, the antenna surface of the silicon-based component is sintered on the heat dissipation shell using nano silver paste; the excitation surface of the silicon-based component is welded on the adapter circuit board by tin-lead solder; the heat dissipation shell is hermetically sealed with the packaging cover by laser sealing technology.

[0031] In summary, the present invention, as a radio frequency microsystem packaging structure, is implemented in a modular integration manner and can be expanded to achieve a larger-scale array; moreover, the present invention can solve the problem of mismatched thermal expansion coefficients in current complex components and the problem that the process temperature gradient cannot meet the assembly requirements; finally, the three-dimensional interconnection transmission and heat dissipation functions of microwave component signals are integrated to reduce the system volume. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 A schematic diagram of a microsystem packaging structure with integrated three-dimensional interconnection and heat dissipation provided by an embodiment of the present invention;

[0033] Figure 2 A schematic diagram of a silicon-based component in a microsystem packaging structure with integrated three-dimensional interconnection and heat dissipation provided by an embodiment of the present invention;

[0034] Figure 3 A schematic diagram of a silicon adapter board in a micro-system packaging structure with integrated three-dimensional interconnection and heat dissipation provided by an embodiment of the present invention;

[0035] Figure 4 A schematic diagram of a heat dissipation housing in a microsystem packaging structure with integrated three-dimensional interconnection and heat dissipation provided by an embodiment of the present invention;

[0036] Figure 5 A schematic diagram of a transfer circuit board in a micro-system packaging structure with integrated three-dimensional interconnection and heat dissipation provided by an embodiment of the present invention;

[0037] Figure 6 A schematic diagram of a packaging cover in a microsystem packaging structure with integrated three-dimensional interconnection and heat dissipation provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0038] The following is combined with Figure 1-6The three-dimensional interconnected and heat dissipation integrated microsystem packaging structure proposed in the present invention is further described in detail with specific implementation methods. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation methods of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the effects that can be produced by the present invention and the purposes that can be achieved, should still fall within the scope of the technical content disclosed by the present invention.

[0039] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0040] In the description of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0041] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0042] See also Figure 1 An embodiment of the present invention provides a three-dimensional interconnection and heat dissipation integrated micro-system packaging structure, which includes: Figure 1 As shown, the heat dissipation housing 1, the silicon-based component 2, the adapter circuit board 3 and the packaging cover plate 4 are arranged in sequence from top to bottom. The heat dissipation housing 1 is connected with the packaging cover plate 4 to form a closed cavity, and the closed cavity is used to accommodate the silicon-based component 2 and the adapter circuit board 3 connected to each other, wherein the silicon-based component 2 is arranged on the inner bottom surface of the heat dissipation housing 1, and the adapter circuit board 3 is connected to the packaging cover plate 4. The heat dissipation housing 1 is provided with a first type of wool button connector that penetrates the bottom wall of the heat dissipation housing 1 and is connected to the silicon-based component 2. In addition, as shown in FIG. Figure 4 As shown, the heat dissipation housing 1 is embedded with a flow channel 22, and the flow channel 22 is used to circulate the coolant. The package cover plate 4 is provided with a second type of button connector that penetrates the package cover plate 4 and connects to the adapter circuit board 3. The silicon-based component 2 realizes electrical interconnection between the button connector, the adapter circuit board 3 and the silicon-based component 2 through a metal layer, copper through-holes, through silicon vias (TSV) and BGA solder ball array package 13 (Ball Grid Array). The button connector is used for signal transmission between the silicon-based component 2 and the outside world. The system is implemented in a modular integration manner, and can realize a larger-scale array through expansion, and integrates the three-dimensional interconnection transmission of microwave component signals and heat dissipation functions.

[0043] In this embodiment, see Figure 1The first type of fur button connector arranged on the heat dissipation shell 1 includes a first fur button RF coaxial electrical connector 5, and the second type of fur button connector arranged on the packaging cover plate 4 includes a second fur button RF coaxial electrical connector and a fur button multi-core low-frequency connector 6. The first fur button RF coaxial electrical connector 5 and the second fur button RF coaxial electrical connector are used for external RF microwave signal transmission, and the fur button multi-core low-frequency connector 6 is used for external low-frequency control signal and electrical signal transmission. The fur button is a commonly used connector in microsystems, which is often used for elastic connection of inner conductors. It can also assist the connection of outer conductors when installed on outer conductors. The fur button can realize the simultaneous transmission of multiple signals and realize the dense three-dimensional interconnection of microsystems.

[0044] In this embodiment, if Figure 2 As shown, the silicon-based component 2 includes an antenna surface 10 and an excitation surface 12 relative to each other. The antenna surface 10 is provided with an RF transceiver port 11 for connecting to the first button RF coaxial electrical connector 5. The excitation surface 12 is connected to the adapter circuit board 3 through a BGA solder ball array package 13. The silicon-based component 2 is prepared based on a silicon-based MEMS process. The antenna surface 10 of the silicon-based component 2 in this embodiment is provided with 16 RF transceiver ports 11, and the rest is a large area of ​​metal, which is used to interconnect and ground with the heat dissipation housing 1, and can be dissipated through the heat dissipation housing 1. The excitation surface 12 of the silicon-based component 2 is a solder ball array package 13. Of course, those skilled in the art of the present invention should understand that the number of the RF transceiver ports 11 is not limited, and the BGA packaging technology can effectively improve the integration while ensuring that the requirements of high power consumption are met.

[0045] In this embodiment, if Figure 1 As shown, the first fur button RF coaxial electrical connector 5 generally includes a first SMP RF connector 7, an internal filling medium 8 and a first fur button end 9. The first SMP RF connector 7 and the center contact piece of the first fur button end 9 are elastically interconnected. The first SMP RF connector 7 is used as an external RF microwave signal interface. The first fur button end 9 is in elastic contact with the antenna port of the silicon-based component 2.

[0046] Similarly, the second wool button RF coaxial electrical connector arranged on the packaging cover plate 4 also includes a second SMP RF connector, an internal filling medium and a second wool button end. The second SMP RF connector is used as an external RF microwave signal interface, and the second wool button end is elastically interconnected with the corresponding pad on the adapter circuit board 3.

[0047] In addition, the packaging cover plate 4 also includes the fur button multi-core low-frequency connector 6, the two ends of the fur button multi-core low-frequency connector 6 are respectively a low-frequency J30J end and a second fur button end, the low-frequency J30J end is an external low-frequency control signal and electrical signal interface, and the second fur button end is elastically interconnected with the solder pad on the adapter circuit board 3.

[0048] In this embodiment, the silicon-based component 2 is embedded with a silicon adapter plate 14. Figure 3 As shown, the silicon adapter board 14 includes a through silicon via 15 that penetrates the silicon adapter board 14. A plurality of dielectric layers are arranged on one end face of the silicon adapter board 14. For example, the present invention adopts two layers of silicon dioxide dielectric layers 16, and a plurality of copper wiring metals 18 are arranged on each silicon dioxide dielectric layer 16, and the layers are interconnected through copper through holes 17. The through silicon via 15 in the silicon adapter board 14 is manufactured in a blind hole manner, with a diameter of 20μm, a hole depth of 200μm, an aspect ratio of 10:1, and solid copper is electroplated inside. After testing, the transmission loss of a single through silicon via 15 is less than 0.13dB@10GHz. Through silicon via technology is a high-density interconnect packaging technology that is gradually replacing the current more mature wire bonding technology and is considered to be the fourth generation packaging technology. The present invention uses through silicon via technology to effectively improve the integration of the system.

[0049] In addition, a power amplifier chip 19 is provided in the silicon-based component 2, which is bonded to the corresponding pad on the top copper wiring metal 18 on the silicon adapter board 14 using nano silver paste. The radio frequency signal output by the power amplifier chip 19 is transmitted to another pad on the copper wiring metal 18 through the bonding wire 20, and is transmitted to the radio frequency transceiver port 11 through the copper through hole 17 and the silicon through hole 15. In addition, after the heat generated by the power amplifier chip 19 is conducted to the heat dissipation housing 1 through the copper through hole 17 array, the silicon through hole 15 array, and the nano silver particle sintering interconnection solder joints, the heat of the silicon-based component is taken away by the coolant in the heat dissipation housing 1, thereby ensuring the normal and stable operation of the power amplifier chip 19. This arrangement effectively improves the heat dissipation performance of the system provided by the present invention.

[0050] In this embodiment, the heat dissipation housing 1 is made of 70% Si-Al high silicon aluminum alloy material with a thermal expansion coefficient of about 7×10-6 / °C, and is provided with 16 RF openings 21 on the surface for welding the first fur button RF coaxial electrical connector 5. Figure 4 As shown, the RF openings 21 have a center-to-center distance of half a wavelength, and are arranged in an array on the heat dissipation housing 1 to form a 4*4 rectangular array.

[0051] In addition, if Figure 4The flow channel 22 is spaced apart from the RF opening 21 for welding the first fur button RF coaxial electrical connector 5, and a coolant inlet 23 and a coolant outlet 24 are provided at both ends of the flow channel 22. To further improve the heat dissipation efficiency, the flow channel 22 is set to be S-shaped, with a rectangular cross section, and a path parallel to each column of RF openings 21, extending along the interval between each column of the matrix array, and when it reaches the last RF opening 21, it bends and enters the interval between the next column.

[0052] In this embodiment, if Figure 5 As shown, the adapter circuit board 3 can adopt a FR4 printed circuit board, and the top metal layer 25 of the adapter circuit board 3 is provided with BGA solder balls corresponding to the pads of the excitation surface 12 of the silicon-based component 2, and the bottom metal layer 27 is provided with pads interconnected with the wool button multi-core low-frequency connector 6.

[0053] In this embodiment, if Figure 6 As shown, the packaging cover plate 4 can be made of 27% Si-Al high-silicon aluminum alloy material, and is provided with 4 RF openings 21 and 4 low-frequency openings 28 for welding the second fur button RF coaxial electrical connector, which are used to realize the welding of the fur button RF coaxial electrical connector 5 and the fur button multi-core low-frequency connector 6. Of course, the number is not limited.

[0054] The advantages of the present invention are:

[0055] 1. The thermal expansion coefficient of the 70% Si-Al high silicon aluminum alloy material used in the present invention is 7×10 -6 / ℃, which is closer to Si chip (thermal expansion coefficient is 4.1×10 -6 / ℃) thermal expansion coefficient, and using it to prepare heat dissipation housing can reduce the internal stress between silicon-based components and metals, improve product reliability, and extend product service life.

[0056] 2. The present invention adopts nano silver glue as the bonding material between the chip and the silicon adapter plate, the heat dissipation shell and the silicon-based component. Compared with other solders, it can complete the assembly of the power chip under lower temperature conditions. At the same time, its excellent electrical and thermal conductivity, high bonding strength, high stability, and low-temperature curing and high-temperature service characteristics can solve the problem of sintering of multi-components in current complex components and module products, and the problem that the process temperature gradient cannot meet the assembly requirements.

[0057] 3. The wool button electrical connector used in the present invention is sintered in the heat dissipation shell and the packaging cover plate, and the transmission coolant flow channel is arranged in the heat dissipation shell, integrating the three-dimensional interconnection transmission and heat dissipation functions of the microwave component signal, reducing the system volume, and realizing the airtightness of the entire structure through laser sealing and welding, thereby improving the reliability of the product and extending the service life of the product.

[0058] 4. The present invention adopts high aspect ratio silicon vias with solid copper electroplating inside, which reduces radio frequency transmission loss while increasing the density of silicon vias in silicon-based components and improving heat dissipation efficiency.

[0059] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A microsystem packaging structure integrating three-dimensional interconnection and heat dissipation, characterized in that: It includes a heat dissipation housing, a silicon-based component, a transfer circuit board, a packaging cover plate and a fur button connector; The heat dissipation housing is connected to the packaging cover plate to form a closed cavity, and the closed cavity is used to accommodate the silicon-based component and the adapter circuit board connected to each other, wherein the silicon-based component is connected to the heat dissipation housing, and the adapter circuit board is connected to the packaging cover plate; The fur button connector includes a first type of fur button connector and a second type of fur button connector; The first type of wool button connector penetrates the bottom wall of the heat dissipation housing and is connected to the silicon-based component, and a flow channel is embedded in the heat dissipation housing, and the flow channel is used to circulate the cooling liquid; The second type of fur button connector penetrates the packaging cover plate and is connected to the adapter circuit board; The silicon-based component realizes electrical interconnection among the button connector, the adapter circuit board and the silicon-based component through a metal layer, copper through-holes, silicon through-holes and BGA solder ball array packaging. The button connector is used for signal transmission between the silicon-based component and the outside world. The first type of fur button connector includes a first fur button RF coaxial electrical connector, and the second type of fur button connector includes a second fur button RF coaxial electrical connector and a fur button multi-core low-frequency connector. The first fur button RF coaxial electrical connector and the second fur button RF coaxial electrical connector are used for external RF microwave signal transmission, and the fur button multi-core low-frequency connector is used for external low-frequency control signal and electrical signal transmission. The second fur button RF coaxial electrical connector includes a second SMP RF connector and a second fur button end which are connected to each other and respectively located at both ends, and an internal filling medium. The two ends of the fur button multi-core low-frequency connector are respectively a low-frequency J30J end and a third fur button end. The second SMP RF connector is an external RF microwave signal interface, and the low-frequency J30J end is an external low-frequency control signal and electrical signal interface. The second fur button end and the third fur button end are elastically interconnected with the pads on the adapter circuit board.

2. The microsystem packaging structure with integrated three-dimensional interconnection and heat dissipation as claimed in claim 1, characterized in that: The silicon-based component includes an antenna surface and an excitation surface relative to each other. The antenna surface is provided with a radio frequency transceiver port for connecting to the first button radio frequency coaxial electrical connector. The excitation surface is connected to the adapter circuit board through BGA packaging technology.

3. The microsystem packaging structure with integrated three-dimensional interconnection and heat dissipation as claimed in claim 2, characterized in that: The first fur button RF coaxial electrical connector includes a first SMP RF connector and a first fur button end which are connected to each other and respectively located at both ends, and an internal filling medium. The first SMP RF connector is an external RF microwave signal interface, and the first fur button end is in elastic contact with the RF transceiver port.

4. The microsystem packaging structure with integrated three-dimensional interconnection and heat dissipation as claimed in claim 2, characterized in that: The silicon-based component is embedded with a silicon adapter plate, and the silicon adapter plate includes a through silicon via passing therethrough; A multi-layer dielectric layer is arranged on one end surface of the silicon adapter plate, and a plurality of copper wiring metals are arranged on the upper and lower surfaces of the dielectric layer, and the copper wiring metals on the upper and lower surfaces are interconnected through copper through holes between the layers, and one end of the silicon through hole is connected to a copper wiring metal on the upper surface; The other end surface of the silicon adapter plate serves as the antenna surface of the silicon-based component, and the other end of the through silicon via is connected to the RF transceiver port.

5. The microsystem packaging structure with integrated three-dimensional interconnection and heat dissipation as claimed in claim 4, characterized in that: A power amplifier chip is bonded to a corresponding pad on a copper wiring metal arranged on the upper surface of the dielectric layer through nano silver paste, and the power amplifier chip is also connected to other pads on the copper wiring metal arranged on the upper surface of the dielectric layer through bonding wires.

6. The microsystem packaging structure with integrated three-dimensional interconnection and heat dissipation as claimed in claim 2, characterized in that: The surface of the heat dissipation housing is provided with a plurality of first radio frequency openings arranged in an array, and the flow channel passes through between every two rows of the first radio frequency openings; The transfer circuit board comprises a relative top metal layer and a bottom metal layer, the top metal layer is provided with a BGA solder ball corresponding to the excitation surface pad, and the bottom metal layer is provided with a pad interconnected with the second fur button RF coaxial electrical connector and the fur button multi-core low-frequency connector; The packaging cover plate is provided with a second radio frequency opening and a low frequency opening, the second radio frequency opening is used to fix the second fur button radio frequency coaxial electrical connector, and the low frequency opening is used to fix the fur button multi-core low frequency connector.

7. The micro-system packaging structure with integrated three-dimensional interconnection and heat dissipation as claimed in claim 1, characterized in that: The heat dissipation housing has a thermal expansion coefficient of 7×10 -6 The transfer circuit board is made of FR4 printed circuit board, and the packaging cover is made of 27% Si-Al high silicon aluminum alloy material.

8. The micro-system packaging structure with integrated three-dimensional interconnection and heat dissipation as claimed in claim 1, characterized in that: The antenna surface of the silicon-based component is sintered on the heat dissipation shell by using nano silver paste; the excitation surface of the silicon-based component is welded on the adapter circuit board by using tin-lead solder; the heat dissipation shell is hermetically sealed with the packaging cover plate by using a laser sealing process.

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