Stress measurement device and method for semiconductor device

Abstract

The present invention provides a stress measurement device and a stress measurement method for a semiconductor device, which relate to the field of semiconductor technology, and include: a base including a first seat and a second seat arranged opposite to each other; a first receiving member is movably mounted on the first seat, and at least two first rollers are movably mounted on the first receiving member; a second receiving member is movably mounted on the second seat, and at least two second rollers are movably mounted on the second receiving member; the two first rollers are parallel to each other and form a first plane, the two second rollers are parallel to each other and form a second plane, the first plane and the second plane are parallel to each other, the moving track of the first receiving member is perpendicular to the first plane, and the moving track of the second receiving member is perpendicular to the second plane. In the above technical solution, the rollers can make the semiconductor device inside the wafer sample be subjected to uniform uniaxial stress, thereby preventing the wafer from breaking due to improper external force.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a stress measurement device and a stress measurement method for a semiconductor device. Background Art

[0002] The research on the development of semiconductor chips from two-dimensional structures to three-dimensional structure manufacturing can accumulate more chips and components in a limited area, greatly improving the integration of chips. Different semiconductor device packaging processes may cause some residual stress inside the semiconductor device, causing very serious stress effects and causing serious damage to the performance of the semiconductor device. The existing measurement methods are mainly aimed at measuring the quantitative research of the adhesion or failure between thin films inside semiconductor devices. Through failure analysis, the reasons for the peeling of thin films from the silicon wafer surface are studied, new delamination cracking is introduced, and the energy barrier of delamination cracking is significantly reduced. The elements that may cause contamination at the film interface are analyzed, and the specific reason for the adhesion failure between the film and the silicon wafer is that the roughness of the silicon wafer surface is low due to excessive polishing of the thin film during the polishing and thinning process. The fracture energy of the interface is calculated from the critical load required for the stable expansion of the interface crack. Due to the presence of a large number of elastic substrates, the stress relaxation and plastic deformation of metal and epoxy films are limited. At present, the four-point bending method is mainly used to measure the adhesion and specific reasons for the failure of the film inside the device. During the deformation process, the risk of sample damage is relatively high, which has a serious impact on the experiment. Summary of the invention

[0003] The object of the present invention is to provide a stress measurement device and a stress measurement method for a semiconductor device, so as to solve the technical problem in the prior art that stress characteristic tests of semiconductor devices cause significant damage to samples.

[0004] The present invention provides a stress measurement device for a semiconductor device, comprising:

[0005] The base comprises a first base and a second base which are arranged opposite to each other;

[0006] A first receiving member is movably mounted on the first pedestal and can move closer to or farther from the first pedestal, and at least two first rollers are movably mounted on the first receiving member;

[0007] A second receiving member is movably mounted on the second pedestal and can move closer to or farther from the second pedestal, and at least two second rollers are movably mounted on the second receiving member;

[0008] The two first rollers are parallel to each other and constitute a first plane, the two second rollers are parallel to each other and constitute a second plane, the first plane and the second plane are parallel to each other, the moving trajectory of the first receiving member is perpendicular to the first plane, and the moving trajectory of the second receiving member is perpendicular to the second plane.

[0009] Furthermore, the first receiving member is a first pressing plate, the second receiving member is a second pressing plate, and the first pressing plate and the second pressing plate are parallel to each other.

[0010] Furthermore, two opposite surfaces of the first pressing plate and the second pressing plate are respectively provided with a plurality of first roller grooves and a plurality of second roller grooves, wherein the first roller groove is used for installing the first roller, and the second roller groove is used for installing the second roller.

[0011] Furthermore, the first roller groove and the second roller groove are both semi-cylindrical, the first roller groove is parallel to the first roller, and the second roller groove is parallel to the second roller.

[0012] Furthermore, the stress measuring device further comprises:

[0013] A first telescopic member, two ends of which are respectively connected to the first pedestal and the first pressing plate, and the first telescopic rod and the first pressing plate are perpendicular to each other; and / or,

[0014] The second telescopic member has two ends respectively connected to the second pedestal and the second pressing plate, and the second telescopic rod and the second pressing plate are perpendicular to each other.

[0015] Furthermore, the base also includes a column, the first seat and the second seat are arranged opposite to each other up and down, and the column is connected to one side of the first seat and the second seat, and together form an inverted N shape.

[0016] Furthermore, the stress measuring device further comprises:

[0017] The performance detection device is used to electrically connect the gate, source, drain and substrate of the wafer sample and apply a voltage excitation signal.

[0018] Furthermore, the stress measuring device further comprises:

[0019] A micrometer is arranged on the base and is used to measure the moving distance of the first receiving member and / or the second receiving member.

[0020] The present application also provides a stress measurement method for a semiconductor device, according to the stress measurement device, comprising the following steps:

[0021] Adjusting the relative positions of the two first rollers and the two second rollers;

[0022] Placing a wafer sample with semiconductor devices between the first roller and the second roller, and keeping the wafer sample parallel to the first plane and the second plane;

[0023] The first receiving member and / or the second receiving member are controlled to move, thereby adjusting the distance between the first plane and the second plane, and applying pressure to both sides of the wafer sample using the first roller and the second roller.

[0024] Furthermore, the wafer sample includes three stacked wafers, wherein the topmost wafer carries the semiconductor device.

[0025] In the above technical solution, the stress measurement device uses a first roller and a second roller as components for applying external force to the wafer sample, and at least two rollers are arranged on both sides of the wafer sample, so that the semiconductor device in the wafer sample is subjected to uniform uniaxial stress. By adjusting the relative positions between four or more rollers, the type and magnitude of stress applied to the semiconductor device can be changed. The first roller and the second roller are both machined to be high-precision rollers with the same diameter, so that the phenomenon of wafer fracture caused by improper application of external force can be effectively avoided, resulting in damage to the experimental sample. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0027] Figure 1 A schematic diagram of a stress measurement device in use according to an embodiment of the present invention;

[0028] Figure 2 A schematic structural diagram of a wafer sample provided by an embodiment of the present invention;

[0029] Figure 3 Schematic diagram of the pressure application state of a wafer sample provided by an embodiment of the present invention Figure 1 ;

[0030] Figure 4 Schematic diagram of the pressure application state of a wafer sample provided by an embodiment of the present invention Figure 2 ;

[0031] Figure 5 Schematic diagram of the pressure application state of a wafer sample provided by an embodiment of the present invention Figure 3 .

[0032] Reference numerals:

[0033] 100, base; 200, first receiving member; 300, second receiving member;

[0034] 400, first roller; 500, second roller; 600, micrometer; 700, wafer sample;

[0035] 101, first pedestal; 102, second pedestal; 103, pillar;

[0036] 201, first roller groove; 301, second roller groove;

[0037] 701. Wafer. DETAILED DESCRIPTION

[0038] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0039] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0040] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0041] like Figures 1 to 5 As shown, this embodiment provides a stress measurement device for a semiconductor device, comprising:

[0042] The base 100 includes a first base 101 and a second base 102 which are arranged opposite to each other;

[0043] A first receiving member 200 is movably mounted on the first pedestal 101 and can move closer to or farther from the first pedestal 101. At least two first rollers 400 are movably mounted on the first receiving member 200.

[0044] The second receiving member 300 is movably mounted on the second pedestal 102 and can move closer to or farther from the second pedestal 102. At least two second rollers 500 are movably mounted on the second receiving member 300.

[0045] The two first rollers 400 are parallel to each other and constitute a first plane, the two second rollers 500 are parallel to each other and constitute a second plane, the first plane and the second plane are parallel to each other, the moving trajectory of the first receiving member 200 is perpendicular to the first plane, and the moving trajectory of the second receiving member 300 is perpendicular to the second plane.

[0046] The stress measurement device uses the first roller 400 and the second roller 500 as components for applying external force to the wafer sample 700, and at least two rollers are set on both sides of the wafer sample 700, that is, at least two first rollers 400 are set on one side, and at least two second rollers 500 are set on the other side, so as to apply external force to the wafer sample 700, so that the semiconductor device in the wafer sample 700 is subjected to uniform uniaxial stress. By adjusting the relative positions between four or more rollers, the type and size of the stress inside the semiconductor device can be changed. The first roller 400 and the second roller 500 are both machined to be high-precision rollers with the same diameter, so that the wafer 701 can be effectively prevented from being broken due to improper application of external force, thereby damaging the experimental sample.

[0047] In one embodiment, the first receiving member 200 is a first pressing plate, the second receiving member 300 is a second pressing plate, and the first pressing plate and the second pressing plate are parallel to each other. In addition, in fact, the first receiving member 200 and the second receiving member 300 can also adopt other structures, such as sheet, block and any other structure, as long as the first receiving member 200 and the second receiving member 300 can be relative to each other and can approach or move away from each other during the movement, and then control the two first rollers 400 to form a first plane and the two second rollers 500 to form a second plane to be able to approach or move away from each other stably, which can achieve the control of the first roller 400 and the second roller 500 to apply a stable external force to the wafer sample 700.

[0048] In one embodiment, the first pressing plate and the second pressing plate are provided with a plurality of first roller grooves 201 and a plurality of second roller grooves 301 on the two opposite surfaces, wherein the first roller grooves 201 are used to install the first roller 400, and the second roller grooves 301 are used to install the second roller 500. At this time, the first roller 400 can be installed in different first roller grooves 201 to adjust the position of the first roller 400, and the relative position between the two first rollers 400 can also be adjusted, so that the position of the external force applied to the wafer sample 700 is different. Similarly, the second roller 500 can also be installed in different second roller grooves 301 to adjust the position of the second roller 500, and the relative position between the two second rollers 500 can also be adjusted, so that the position of the external force applied to the wafer sample 700 is different.

[0049] Of course, in addition to this, other methods can be used to adjust the positions of the first roller 400 and the second roller 500. For example, a first slide rail assembly and a second slide rail assembly can be used. The two first rollers 400 are movably assembled on the first receiving member 200 through the first slide rail assembly, and the sliding track of the first slide rail assembly is perpendicular to the first roller 400. The two second rollers 500 are movably assembled on the second receiving member 300 through the second slide rail assembly, and the sliding track of the second slide rail assembly is perpendicular to the second roller 500. The first slide rail assembly includes a first track and two slides, the first track is perpendicular to the first roller 400, and the two first rollers 400 are slidably assembled with the first track through the slide; and / or the first slide rail assembly includes a first track and two slides, the first track is perpendicular to the first roller 400, and the two first rollers 400 are slidably assembled with the first track through the slide.

[0050] As for the first roller groove 201 and the second roller groove 301, as long as the stable installation of the first roller 400 and the second roller 500 can be guaranteed, the shape of the groove can be set arbitrarily. In one embodiment, the first roller groove 201 and the second roller groove 301 are both semi-cylindrical, the first roller groove 201 is parallel to the first roller 400, and the second roller groove 301 is parallel to the second roller 500.

[0051] The first supporting member 200 can be moved closer to or farther from the first pedestal 101, and the second supporting member 300 can be moved closer to or farther from the second pedestal 102, which can be achieved by using a first telescopic member and a second telescopic member. The first telescopic member and the second telescopic member can be an electrically controlled telescopic rod, a hydraulic telescopic rod, a pneumatic telescopic rod, etc. The two ends of the first telescopic member are respectively connected to the first pedestal 101 and the first pressing plate, and the first telescopic rod and the first pressing plate are perpendicular to each other; and / or the two ends of the second telescopic member are respectively connected to the second pedestal 102 and the second pressing plate, and the second telescopic rod and the second pressing plate are perpendicular to each other.

[0052] For the base 100, the base 100 also includes a column 103. The first seat 101 and the second seat 102 are arranged opposite to each other up and down. The column 103 is connected to one side of the first seat 101 and the second seat 102, and together they form an inverted n shape. At this time, the first seat 101 and the second seat 102 form an upper and lower relative position, so that the first receiving member 200 and the second receiving member 300 also control the movement of the first roller 400 and the second roller 500 according to the upper and lower relative position. Of course, in addition to this, as long as the first roller 400 and the second roller 500 can apply external force to both sides of the wafer sample 700, the first receiving member 200 and the second receiving member 300 can actually be arranged in any direction, such as upright or inclined.

[0053] In one embodiment, the stress measurement device also includes a performance detection device, which is used to electrically connect the gate, source, drain and substrate of the wafer sample 700, and apply a voltage excitation signal. At this time, the performance detection device can use various terminal devices with detection functions, such as computers, tablet computers, etc., and can use wires to connect to the gate, source, drain and substrate in the transistor, apply voltage and measure the current between its source and drain. Therefore, by implementing the four-point bending method through two first rollers 400 and two second rollers 500, the internal stress changes of the semiconductor device can be effectively detected, and the compressive stress and tensile stress inside the semiconductor device can be well analyzed. The use of rollers to apply external force to the surface of the wafer 701 can reduce the destructiveness to the sample surface. In order to better understand the internal changes of the semiconductor device under the external force applied by the rollers, we can measure and analyze the compressive stress and tensile stress, and perform electrical performance tests before and after the external force is applied to compare the changes between the two. Moreover, the stress measuring device further includes a micrometer 600 , which can be disposed on the base 100 to measure the moving distance of the first receiving member 200 and / or the second receiving member 300 .

[0054] During the detection, the distance between the two first rollers 400 and the two second rollers 500 is individually adjustable before and after the semiconductor device is deformed under external force. The position and direction of the force on the device in the wafer 701 are changed by adjusting the relative position between the rollers, and the magnitude of the applied external force is changed by adjusting the distance d, so that the sample is deformed to different degrees. The four ports of the transistor in the semiconductor device, the gate, source, drain and substrate, can be connected to PAD-G, PAD-S, PAD-D and PAD-B respectively. The source, drain and gate PAD in the transistor are connected by wires. A voltage excitation signal is applied to the transistor through these four ports, and the device performance when the semiconductor device is not subjected to external force can be measured.

[0055] Next, a uniform longitudinal uniaxial stress is applied to the surface of the wafer 701. The magnitude of the applied uniaxial longitudinal stress is controlled by adjusting the distance d, and the change in distance (Δd) is measured by the micrometer 600. The stress characteristics inside the device in the wafer 701 with the device under the action of external force will change. By adjusting the relative positions between the four rollers, the type and magnitude of the stress on the device can be changed, thereby obtaining the change in the internal stress characteristics of the semiconductor device under the action of external force. After applying stress to the semiconductor device, the device performance is compared with the initial state to study the change in the device electrical performance under stress.

[0056] The present application also provides a stress measurement method for a semiconductor device, according to the stress measurement device, comprising the following steps:

[0057] Adjusting the relative positions of the two first rollers 400 and the two second rollers 500;

[0058] Placing a wafer sample 700 with semiconductor devices between the first roller 400 and the second roller 500, and keeping the wafer sample 700 parallel to the first plane and the second plane;

[0059] The first receiving member 200 and / or the second receiving member 300 are controlled to move, thereby adjusting the distance between the first plane and the second plane, and applying pressure to both sides of the wafer sample 700 by using the first roller 400 and the second roller 500 .

[0060] Furthermore, the wafer sample 700 includes three stacked wafers 701, wherein the top wafer 701 has the semiconductor device. The wafer 701 with the device and two identical wafers 701 can be bonded together using epoxy resin to form the wafer sample 700.

[0061] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A stress measurement device for a semiconductor device, characterized in that: include: The base comprises a first base and a second base which are arranged opposite to each other; A first receiving member is movably mounted on the first pedestal and can move closer to or farther away from the first pedestal, and at least two first rollers are movably mounted on the first receiving member; A second receiving member is movably mounted on the second pedestal and can move closer to or farther from the second pedestal, and at least two second rollers are movably mounted on the second receiving member; The two first rollers are parallel to each other and form a first plane, the two second rollers are parallel to each other and form a second plane, the first plane and the second plane are parallel to each other, the moving track of the first receiving member is perpendicular to the first plane, and the moving track of the second receiving member is perpendicular to the second plane; The first receiving member is a first pressing plate, the second receiving member is a second pressing plate, and the first pressing plate and the second pressing plate are parallel to each other; A plurality of first roller grooves and a plurality of second roller grooves are respectively formed on two opposite surfaces of the first pressing plate and the second pressing plate, wherein the first roller grooves are used to install the first rollers, and the second roller grooves are used to install the second rollers; By adjusting the relative positions of four or more rollers, the type and magnitude of stress inside the semiconductor device can be changed.

2. The stress measuring device according to claim 1, characterized in that: The first roller groove and the second roller groove are both semi-cylindrical, the first roller groove is parallel to the first roller, and the second roller groove is parallel to the second roller.

3. The stress measuring device according to claim 1, characterized in that: Also includes: A first telescopic member, two ends of which are respectively connected to the first seat and the first pressing plate, and the first telescopic member and the first pressing plate are perpendicular to each other; and / or, The second telescopic member has two ends respectively connected to the second pedestal and the second pressing plate, and the second telescopic member and the second pressing plate are perpendicular to each other.

4. The stress measuring device according to claim 1, characterized in that: The base also includes a column. The first pedestal and the second pedestal are arranged opposite to each other up and down. The column is connected to one side of the first pedestal and the second pedestal and together forms an inverted N shape.

5. The stress measuring device according to any one of claims 1 to 4, characterized in that: Also includes: The performance detection device is used to electrically connect the gate, source, drain and substrate of the wafer sample and apply a voltage excitation signal.

6. The stress measuring device according to any one of claims 1 to 4, characterized in that: Also includes: A micrometer is arranged on the base and is used to measure the moving distance of the first receiving member and / or the second receiving member.

7. A method for measuring stress of a semiconductor device, according to the stress measuring device according to any one of claims 1 to 6, characterized in that: The steps include: Adjusting the relative positions of the two first rollers and the two second rollers; Placing a wafer sample with semiconductor devices between the first roller and the second roller, and keeping the wafer sample parallel to the first plane and the second plane; The first receiving member and / or the second receiving member are controlled to move, thereby adjusting the distance between the first plane and the second plane, and applying pressure to both sides of the wafer sample using the first roller and the second roller.

8. The stress measurement method according to claim 7, characterized in that: The wafer sample includes three stacked wafers, wherein the topmost wafer carries the semiconductor device.

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