Method and apparatus for post-exposure processing of photoresist wafers

Abstract

Embodiments described herein relate to methods and apparatus for performing an immersion field directed post-exposure bake process. Embodiments of the apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume, and a first electrode may be coupled to the pedestal. A movable rod may extend through the chamber body and opposite the pedestal, and a second electrode may be coupled to the movable rod. In certain embodiments, a fluid containment ring may be coupled to the pedestal, and a dielectric containment ring may be coupled to the second electrode.

Description

[0001] This application is a divisional application of a Chinese patent application with an application date of November 29, 2016, application number 201611076231.6, and name “Method and device for post-exposure processing of photoresist wafers”. Technical Field

[0002] The present disclosure relates generally to methods and apparatus for processing substrates, and more particularly to methods and apparatus for improving photolithography processes. Background Art

[0003] Integrated circuits have evolved into complex devices that can include millions of components (e.g., transistors, capacitors, and resistors) on a single chip. Photolithography is a process that can be used to form components on a chip. Generally speaking, the photolithography process involves several basic stages. First, a photoresist layer is formed on a substrate. Chemically enhanced photoresists may include an etch-resistant resin and a photoacid generator. When exposed to electromagnetic radiation in a subsequent exposure stage, the photoacid generator changes the solubility of the photoresist during the development process. The electromagnetic radiation can have any suitable wavelength, such as a 193nm ArF laser, an electron beam, an ion beam, or other suitable sources.

[0004] In the exposure stage, a photomask or reticle can be used to selectively expose certain areas of the substrate to electromagnetic radiation. Other exposure methods can be maskless exposure methods. Exposure to light can decompose the photoacid generator, thereby generating acid and generating a latent acid image in the resist resin. After exposure, the substrate can be heated in a post-exposure baking process. During the post-exposure baking process, the acid generated by the photoacid generator reacts with the resist resin to change the solubility of the resist during the subsequent development process.

[0005] After the post-exposure bake, the substrate, especially the photoresist layer, can be developed and rinsed. Depending on the type of photoresist used, the areas of the substrate exposed to the electromagnetic radiation may be resistant or easier to remove. After development and rinsing, the pattern of the mask is transferred to the substrate using a wet etching process or a dry etching process.

[0006] The evolution of chip design constantly requires faster circuits and greater circuit density. The demand for greater circuit density requires the size of integrated circuit components to be reduced. As the size of integrated circuit components is reduced, more components need to be placed in a given area on a semiconductor integrated circuit. Therefore, the photolithography process must transfer even smaller features to the substrate, and the photolithography must be very precise, accurate and non-destructive. In order to accurately and accurately transfer the features to the substrate, high-resolution lithography can use a light source that provides radiation with a small wavelength. Small wavelengths help to reduce the minimum printable size on the substrate or wafer. However, small wavelength lithography suffers from the following problems, such as low yield, increased line edge roughness and / or reduced resist sensitivity.

[0007] In recent developments, electrode assemblies are used to generate an electric field to a photoresist layer disposed on a substrate before or after an exposure process in order to modify the chemical properties of the portion of the photoresist layer to which electron radiation is transmitted, thereby improving the photolithography exposure / development resolution. However, challenges in realizing such systems have not yet been overcome.

[0008] Therefore, there is a need for improved methods and apparatus for improving photolithography processes. Summary of the invention

[0009] In one embodiment, a substrate processing apparatus is provided. The apparatus includes: a chamber body, the chamber body defining a processing volume; and a pedestal, the pedestal disposed within the processing volume. One or more fluid sources can be coupled to the processing volume through the pedestal, and an exhaust port can be coupled to the processing volume through the pedestal. A first electrode is coupled to the pedestal, and the fluid containment ring is coupled to the pedestal radially outward of the first electrode. A movable rod can be disposed opposite the pedestal and extend through the chamber body, and a second electrode can be coupled to the rod.

[0010] In another embodiment, a substrate processing apparatus is provided. The apparatus includes: a chamber body, the chamber body defining a processing volume; and a pedestal, the pedestal disposed in the processing volume. An exhaust port can be coupled to the processing volume through the pedestal, a first electrode can be coupled to the pedestal, and a fluid containment ring can be coupled to the pedestal radially outward of the first electrode. A movable rod can be disposed opposite the pedestal and extend through the chamber body. A second electrode can be coupled to the rod, and a dielectric containment ring can be coupled to the second electrode. One or more fluid sources can be coupled to the processing volume through the dielectric containment ring.

[0011] In yet another embodiment, a substrate processing apparatus is provided. The apparatus includes a chamber body defining a processing volume, a pedestal may be disposed in the processing volume, and a first electrode may be coupled to the pedestal. A movable rod may be disposed opposite the pedestal and extend through the chamber body. A second electrode may be coupled to the rod, and a dielectric containment ring may be coupled to the second electrode. An elastomeric O-ring may be coupled to the dielectric containment ring opposite the second electrode. One or more fluid sources, exhaust ports, and purge gas sources may each be coupled to the processing volume through the dielectric containment ring. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Therefore, in order to be able to understand in detail the manner in which the above-mentioned characteristic structures of the present disclosure are used, a more specific description of the present disclosure briefly summarized above can be made with reference to various embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings only illustrate exemplary embodiments and therefore should not be considered to limit its scope, and other equivalent embodiments may also be allowed.

[0013] Figure 1 A cross-sectional view of an immersion field guided post-exposure bake chamber is schematically shown according to one embodiment described herein.

[0014] Figure 2 Schematically illustrates a process according to one embodiment described herein in a processing position. Figure 1 A cross-sectional view of the chamber.

[0015] Figure 3 A cross-sectional view of an immersion field guided post-exposure bake chamber is schematically shown according to one embodiment described herein.

[0016] Figure 4 A cross-sectional view of an immersion field guided post-exposure bake chamber is schematically shown according to one embodiment described herein.

[0017] Figure 5 A cross-sectional view of an immersion field guided post-exposure bake chamber is schematically shown according to one embodiment described herein.

[0018] Figure 6 Schematically illustrates a process according to one embodiment described herein in a processing position. Figure 5 A cross-sectional view of the chamber.

[0019] Figure 7 A cross-sectional view of an immersion field guided post-exposure bake chamber is schematically shown according to one embodiment described herein.

[0020] Figure 8A cross-sectional view of an immersion field guided post-exposure bake chamber is schematically shown according to one embodiment described herein.

[0021] Fig. 9 Operations of a method for performing an immersion exposure post bake process are shown in accordance with one embodiment described herein.

[0022] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation. DETAILED DESCRIPTION

[0023] Figure 1 A cross-sectional view of a processing chamber 100 according to one embodiment described herein is schematically shown. The processing chamber 100 includes a chamber body 102 that defines a processing volume 104. A pump 172 can be fluidly coupled to the processing volume 104 through the chamber body 102 and can be configured to create a vacuum within the processing volume 104 or to exhaust fluids and other materials from the processing volume 104. A slit valve 148 can be formed in the chamber body 102 to provide access to substrates for processing. A slit valve door 150 can be coupled to the chamber body 102 adjacent to the slit valve 148. In general, the chamber body 102 can be formed of a material suitable for performing an immersion field guided post exposure bake (iFGPEB) process therein, such as aluminum, stainless steel, and alloys thereof. The chamber body 102 can also be formed of various other materials, such as polymers such as polytetrafluoroethylene (PTFE) and high temperature plastics such as polyetheretherketone (PEEK).

[0024] The pedestal 106 may be disposed within the processing volume 104 and may be coupled to the chamber body 102. In one embodiment, the pedestal 106 may be fixedly coupled to the chamber body 102. In another embodiment, the pedestal 106 may be rotatably coupled to the chamber body 102. In this embodiment, a motor (not shown) may be coupled to the pedestal 106, and the motor may be configured to impart rotational movement to the pedestal 106. It is contemplated that the rotation of the pedestal 106 may be used to spin dry a substrate after processing of the substrate.

[0025] The first electrode 108 may be coupled to the base 106. The first electrode 108 may be fixedly coupled to the base 106, or rotatably coupled to the base 106. In an embodiment where the first electrode 108 is rotatably coupled to the base 106, the rotation of the first electrode 108 may be used to spin dry the substrate after processing. The first electrode 108 may be formed of a conductive metal material. In addition, the material used for the first electrode 108 may be a non-oxidizing material. The material selected for the first electrode 108 may provide a desired current uniformity and low resistance across the surface of the first electrode 108. In certain embodiments, the first electrode 108 may be a segmented electrode configured to introduce voltage non-uniformity across the surface of the first electrode 108. In this embodiment, multiple power supplies may be used to power different sections of the first electrode 108.

[0026] The fluid containment ring 112 may be coupled to the base 106 radially outward of the first electrode 108. The fluid containment ring 112 may be made of a non-conductive material, such as a ceramic material or a high temperature plastic material. The base 106 and the fluid containment ring 112 may have substantially similar diameters, and the distance radially inward from the fluid containment ring 112 to the first electrode 108 may be between about 0.1 cm and about 3.0 cm, such as between about 0.5 cm and about 2.0 cm, for example about 1.0 cm. The fluid containment ring 112 may extend from the base 106 to further define the processing volume 104. Generally speaking, the top of the fluid containment ring 112 may be coplanar with or disposed below the plane occupied by the slit valve 148.

[0027] The base 106 may include one or more conduits disposed therethrough, and an integrally disposed heating device (not shown) may be disposed within the base 106 to preheat fluid traveling through the conduits. A process fluid source 116 may be fluidically coupled to the processing volume 104 via a conduit 114. The conduit 114 may extend from the process fluid source 116 through the chamber body 102 and the base 106 to the processing volume 104. In one embodiment, a fluid outlet 124 may be formed in the base 106, radially outside the first electrode 108 and radially inside the fluid containment ring 112. A valve 118 may be disposed on the conduit 114, between the fluid outlet 124 and the process fluid source 116. A flushing fluid source 120 may also be fluidically coupled to the processing volume 104 via the fluid conduit 114. A valve 122 may be disposed on the conduit 114, between the fluid outlet 124 and the flushing fluid source 120. The process fluid source 116 may be configured to deliver a fluid utilized during application of an electric field during an iFGPDB process. The rinsing fluid source 120 may be configured to deliver fluid to rinse the substrate after the iFGPEB process has been performed.

[0028] The drain 128 may be fluidly coupled to the processing volume 104 via a conduit 126. The conduit 126 may extend from the drain 128 through the chamber body 102 and the base 106. In one embodiment, a fluid inlet 132 may be formed in the base 106 radially outward of the first electrode 108 and radially inward of the fluid containment ring 112. A valve 130 may be disposed on the conduit 126 between the fluid inlet 132 and the drain 128. Fluid, such as fluid from the process fluid source 116 and the flushing fluid source 120, may be removed from the processing volume 104 via the fluid inlet 132 and the drain 128.

[0029] The vacuum source 136 can be coupled to the top surface of the first electrode 108 via a conduit 134. The conduit 134 can extend through the chamber body 102, the base 106, and the first electrode 108. As shown, the substrate 110 can be disposed on the first electrode 108. When the substrate 110 is positioned on the first electrode 108, the conduit 134 can be positioned below the area covered by the substrate 110. The vacuum source 136 can be configured to draw a vacuum in order to secure the substrate 110 to the first electrode 108. In certain embodiments, the vacuum source 136 and the conduit 134 can be optional if the substrate is secured to the first electrode 108 by other means, such as electrostatic clamping or mechanical means (i.e., rings, pins, etc.).

[0030] The heat source 140 may be fluidly coupled to the first electrode 108 via the conduit 138. The heat source 140 may provide power to one or more heating elements (such as a resistive heater) disposed within the first electrode 108. It is also contemplated that the heat source 140 may provide power to a heating element disposed within the pedestal 106. The heat source 140 is generally configured to heat the first electrode 108 and / or the pedestal 106 during the iFGPEB process to assist in preheating the fluid. In one embodiment, the heat source 140 may be configured to heat the first electrode 108 to a temperature between about 70° C. and about 130° C., such as about 110° C. In other embodiments, the heat source may be coupled to the conduit 114 to preheat the fluid entering the processing volume 104 from the process fluid source 116 and / or the flushing fluid source 120. The temperature sensing device 142 may also be coupled to the first electrode 108 via the conduit 138. A temperature sensing device 142 , such as a thermocouple, may be communicatively coupled to the heat source 140 to provide temperature feedback and assist in heating the first electrode 108 .

[0031] The power supply 144 is also coupled to the first electrode 108 via the conduit 138. The power supply 144 may be configured to supply the first electrode, for example, between about 1V and about 20kV. Depending on the type of process fluid utilized, the current generated by the power supply 144 may be in the order of tens of nanoamperes to hundreds of milliamperes. In one embodiment, the power supply 144 may be configured to generate an electric field in the range of about 1kV / m to about 2MeV / m. In some embodiments, the power supply 144 may be configured to operate in a voltage control mode or a current control mode. In both modes, the power supply may output an AC, DC and / or pulsed DC waveform. Square waves or sine waves may be used as needed. The power supply 144 may be configured to provide power at a frequency between about 0.1Hz and about 1MHz (such as about 5kHz). The duty cycle of the pulsed DC power or AC power may be between about 5% and about 95%, such as between about 20% and about 60%.

[0032] The rise time and fall time of the pulsed DC power or AC power may be between about 1 ns and about 1000 ns, such as between about 10 ns and about 500 ns. A sensing device 146 may also be coupled to the first electrode 108 via the conduit 138. A sensing device 146 (such as a voltmeter or the like) may be communicatively coupled to the heat source 144 to provide electrical feedback and help control the power applied to the first electrode 108. The sensing device 146 may also be configured to sense the current applied to the first electrode 108 via the power source 144.

[0033] The movable rod 152 can be disposed through the chamber body 102, opposite the base 106. The rod 152 is configured to move in the Z direction (ie, toward and away from the base 106), and can be moved between a non-processing position as shown and a processing position (eg, Figure 2 The second electrode 154 can be coupled to the rod 152. The second electrode 154 can be formed of the same material as the first electrode 108. Similar to the first electrode 108, in some embodiments, the second electrode 154 can be segmented.

[0034] A purge gas source 158 may be fluidly coupled to the processing volume 104 via a conduit 156. The conduit 156 may extend from the purge gas source 158 through the rod 152 and the second electrode 154. In certain embodiments, the conduit 156 may be formed of a flexible material to accommodate movement of the rod 152. Although not shown, in alternative embodiments, the conduit may extend through the rod 152 to the processing volume 104 instead of the second electrode 154. A valve 160 may be disposed on the conduit 156 between the rod 152 and the purge gas source 158. The gas provided by the purge gas source 158 may include nitrogen, hydrogen, an inert gas, etc., to purge the processing volume 104 during or after the iFGPEB process. When necessary, the purge gas may be discharged from the processing volume 104 via a pump 172.

[0035] Heat source 170, temperature sensing device 168, power source 166, and sensing device 164 may be communicatively coupled to second electrode 154 via conduit 162. Heat source 170, temperature sensing device 168, power source 166, and sensing device 164 may be configured similarly to heat source 140, temperature sensing device 142, power source 144, and sensing device 146.

[0036] Embodiments described herein relate to methods and apparatus for performing an immersion field guided post-exposure bake process. The methods and apparatus disclosed herein can increase photoresist sensitivity and the productivity of a photolithography process. The random diffusion of the acid produced by the photoacid generator during the post-exposure bake process contributes to line edge / line width roughness and reduced photoresist sensitivity. The electrode assembly can be used to apply an electric field to the photoresist layer during the photolithography process. The field application can control the diffusion of the charged species produced by the photoacid generator.

[0037] The air gap defined between the photoresist layer and the electrode assembly can produce a voltage drop applied to the electrode assembly, thereby adversely reducing the level of the electric field that needs to be generated to the photoresist layer. Due to the voltage drop, the level of the electric field at the photoresist layer may produce insufficient or inaccurate voltage power to drive or form charged species in the photoresist layer in certain desired directions. Therefore, a reduction in line edge profile control of the photoresist layer can generally result.

[0038] The intermediate medium can be arranged between the photoresist layer and the electrode assembly to prevent the formation of air gaps, so as to maintain the level of the electric field interacting with the photoresist layer at a certain desired level. In this way, the charged material generated by the electric field can be guided in the desired direction along the line and spacing direction, thereby preventing the line edge / line width roughness caused by inaccurate and random diffusion. Therefore, the controlled level or desired level of the generated electric field can increase the accuracy and sensitivity of the photoresist layer to the exposure and / or development process. In one example, the intermediate medium can be a non-gas phase medium, such as a slurry, a gel or a liquid solution, and the intermediate medium can effectively maintain the applied voltage level within a certain range when it is transmitted from the electrode assembly to the photoresist layer arranged on the substrate. The charge generated by the electric field can be transmitted between the intermediate medium and the photoresist, which can cause a net current flow. In some embodiments, the net current flow can improve the reaction characteristics, such as improving the reaction rate of the photoresist. The control of the amount of charge transmitted between the intermediate medium and the photoresist is also advantageously achieved by operating the power supply 144 with a controlled current.

[0039] Figure 2 Schematically illustrates a process according to one embodiment described herein in a processing position. Figure 11. A cross-sectional view of the chamber 100 of FIG. 1. The rod 152 can be moved toward the base 106 into a processing position. In the processing position, the distance 174 between the second electrode 154 and the substrate 110 can be between about 1 mm and about 1 cm, such as about 2 mm. A processing fluid can be delivered to the processing volume 104 defined and maintained by the fluid containment ring 112, and the second electrode 154 can be partially or completely immersed when the rod 152 is in the processing position. Power can be applied to one or both of the electrodes 108, 154 to perform the iFGPEB process.

[0040] In some embodiments, the first electrode 108 and the second electrode 154 are configured to generate an electric field parallel to the xy plane defined by the substrate 110. For example, the electrodes 108, 154 may be configured to generate an electric field in one of the y direction, the x direction, or another direction in the xy plane. In one embodiment, the electrodes 108, 154 are configured to generate an electric field in the xy plane and in the direction of a latent image line that may be patterned on the substrate 110. In another embodiment, the electrodes 108, 154 are configured to generate an electric field in the xy plane and perpendicular to the direction of the latent image line that may be patterned on the substrate 110. The electrodes 108, 154 may be additionally or alternatively configured to generate an electric field in the z direction (e.g., perpendicular to the substrate 110).

[0041] Figure 3 A cross-sectional view of an iFGPEB chamber 300 according to one embodiment described herein is schematically shown. The third electrode 302 may be similar in some respects to the second electrode 154. A dielectric containment ring 304 may be coupled to the third electrode 302, opposite the rod 152. The diameter of the dielectric containment ring 304 may be similar to the diameter of the third electrode 302. The dielectric containment ring 304 may be formed of a dielectric material, such as a polymer or ceramic having suitable dielectric properties. An O-ring 308 may be coupled to the dielectric containment ring 304, opposite the third electrode 302, and extend circumferentially around the dielectric containment ring 304. The O-ring 308 may be formed of an elastomeric material, such as a polymer, and may be compressible when the rod 152 is disposed in a processing position.

[0042] For example, when the rod 152 is placed in the processing position (such as Figure 2106). The diameter of the third electrode 302 and the diameter of the dielectric containment ring 304 can be selected based on the desired areas 310, 312 that the O-ring 308 contacts. It is contemplated that when the O-ring 308, and the third electrode 302 / dielectric containment ring 304 are configured to contact the area 312 on the pedestal 106, the point at which the O-ring 308 contacts can be radially inward of the fluid inlet 132 to provide unrestricted fluid access to the exhaust port 128. The O-ring 308 can also be sized and positioned to contact an exclusion zone of the substrate 110 when the rod 152 is disposed in the processing position. Generally, the exclusion zone of the substrate 110 is an area radially inward of the substrate 110 that is a distance of about 1 mm to about 3 mm from the circumference of the substrate 110. In this embodiment, the processing volume 104 may be defined by the substrate 110, the dielectric containment ring 304, and the third electrode 302. Advantageously, the back side of the substrate 110 coupled to the first electrode 108 may remain unexposed to process or flushing fluids, which helps prevent fluids from entering the vacuum source 136.

[0043] The flushing fluid source 120 can be fluidly coupled to the processing volume 104 via a conduit 156, which can extend through the rod 152, the third electrode 302, and the dielectric containment ring 304. The fluid outlet 306 of the conduit 156 can be disposed at the inner diameter of the dielectric containment ring 304. The flushing fluid source 120 and the purge gas source 158 can also be coupled to the conduit 156. Alternatively, the fluid conduit 156 can extend through the rod 152 above the third electrode 302 and extend radially outward of the third electrode 302 through the dielectric containment ring 304 to the fluid outlet 306.

[0044] Figure 4 A cross-sectional view of an iFGPEB chamber 400 according to one embodiment described herein is schematically shown. Chamber 400 is similar to chamber 300 in some respects, however, fluid containment ring 112 is not coupled to base 106. Drain 418 may be fluidically coupled to processing volume 104 via conduit 414, which may extend through rod 152, fourth electrode 402 (which is coupled to rod 152), and dielectric containment ring 404. In some embodiments, conduit 414 may be formed of a flexible material to accommodate movement of rod 152. A fluid outlet 416 of conduit 414 may be disposed at an inner diameter of dielectric containment ring 404. A valve may be disposed on conduit 414, between drain 418 and rod 152. Alternatively, conduit 414 may extend through rod 152 to above fourth electrode 402, and extend radially outward of fourth electrode 402 through dielectric containment ring 404 to fluid outlet 416.

[0045] Similar to chamber 300, when rod 152 is disposed in a processing position (eg Figure 2 4), the fourth electrode 402, the dielectric containment ring 404, and the O-ring 408 opposite the fourth electrode 402 and circumferentially coupled around the dielectric containment ring 404 can be sized such that the O-ring 408 contacts an area 410 on the first electrode 108 or an area 412 of the pedestal 106. During processing, various process fluids and flushing fluids can be introduced into the processing volume 104, which is further defined by the dielectric containment ring 404 and the fourth electrode 402. The fluid can be discharged from the processing volume 104 to a drain 418 via a fluid outlet 416.

[0046] Although in Figures 1 to 4 108 to help position the substrate 110 on the first electrode 108. For example, when the rod 152 is in a non-processing raised position, the lift pins can extend upward and receive the substrate from the robot blade extending through the slit valve 148. Then, the lift pins can be retracted and position the substrate 110 on the first electrode 108.

[0047] Figure 5 Schematically depicts a cross-sectional view of an iFGPEB chamber 500 according to one embodiment described herein. The chamber 500 includes a chamber body 502 defining a processing volume 504; a base 506; a first electrode 508; and a fluid containment ring 512, which may be similar in some respects to the chamber body 102, processing volume 104, base 106, first electrode 108, and fluid containment ring 112, except that the components of the chamber 500 are sized to accommodate a rotatable shaft 516 and a second electrode 518 coupled to the rotatable shaft 516. The rotatable shaft 516 is rotatably coupled to a bearing member 514. The bearing member 514 may be coupled to the chamber body 502 so that the bearing member 514 rotates about an X or Y (horizontal) axis.

[0048] The substrate 110 may be disposed on the second electrode 518 in a manner such as Figure 5 Non-treated position shown. Figure 6 Shown in the processing position Figure 5 The chamber 500 of FIG. 1 is provided with a rotatable rod 516 having received the substrate 110 on the second electrode 518, which can be rotated about a horizontal axis to a processing position as shown. The fluid supplied to the processing volume 504 further defined by the fluid containing ring 512 can be an amount suitable for partially or completely immersing the second electrode 518. The iFGPEB process can be performed, and the rotatable rod 516 can be rotated back to a non-processing position. The bearing member 514 can also be configured to rotate about a Z axis (vertical axis) to spin the rotatable rod 516 and the second electrode 518 to discharge the remaining fluid on the substrate 110.

[0049] Figure 7 A cross-sectional view of an immersion field guided post-exposure bake chamber 700 according to one embodiment described herein is schematically shown. The chamber 700 includes a chamber body 702, which may be made of a metallic material such as aluminum, stainless steel, and alloys thereof. The chamber body 702 may also be formed of various other materials, such as polymers such as polytetrafluoroethylene (PTFE) and high temperature plastics such as polyetheretherketone (PEEK). The body 702 includes a fluid containment ring 712, which may extend from the body 702 and at least partially define a first processing volume 704. The body 702 may also include a sidewall 794 and a cover 796 extending from the sidewall 794. The body 702, the fluid containment ring 712, the sidewall 794, and the cover 796 may define a second processing volume 754, which is formed radially outside the first processing volume 704. An opening 792 may be defined by the cover 796, and the opening 792 may be sized to accommodate a substrate 710 passing therethrough.

[0050] The door 706 can be operably coupled to the chamber body 702 and disposed adjacent to the lid 796. The door 706 can be formed of a material similar to the material selected for the chamber body 702, and the shaft 798 can extend through the door 706. Alternatively, the chamber body 702 can be formed of a first material (such as a polymer) and the door 706 can be formed of a second material (such as a metal material). The door 706 can be coupled to a track (not shown), and the door can be configured to translate along the track in an X-axis. A motor (not shown) can be coupled to the door and / or the track to help move the door 706 along the X-axis. Although the door 706 is shown in a processing position, the door 706 can be configured to rotate about the Z-axis, about the shaft 798. Before rotating, the door 706 can be moved away from the chamber body 702 along the Z-axis and the lid 796 can be cleared before rotating. For example, the door 706 may be rotated 90° from the illustrated processing position to a loading position where substrates 710 may be loaded and unloaded from a first electrode 708 coupled to the door 706 .

[0051] The first electrode 708, which may be similar to the first electrode 108, is sized to attach the substrate 710 thereto. The first electrode 708 may also be sized to allow passage through the opening 792 defined by the cover 796. In one embodiment, the first electrode 708 may be fixedly coupled to the door 706. In another embodiment, the first electrode 708 may be rotatably coupled to the door 706. In this embodiment, a motor 772 may be coupled to the door 706, opposite the first electrode 708, and the motor 772 may be configured to rotate the first electrode 708 about the X-axis. The rotation of the first electrode 708 may be used to spin dry the substrate 710 after iFGPEB processing. To perform the spin dry, the door 706 may be translated away from the fluid containment ring 712 along the Z-axis so that the substrate 710 does not pass through the opening 792. The motor 772 may be activated to spin the first electrode 708 (where the substrate 710 is clamped to the first electrode) to remove the fluid from the surface of the substrate 710.

[0052] The vacuum source 736 can be in fluid communication with the substrate receiving surface of the first electrode 708. The vacuum source 736 can be coupled to a conduit 734 that extends from the vacuum source 736 through the door 706 and the first electrode 708. In general, the vacuum source 736 is configured to vacuum clamp the substrate 710 to the first electrode 708. A heat source 764, a temperature sensing device 766, a power source 768, and a sensing device 770 can also be coupled to the first electrode 708 via a conduit 762. The heat source 764, the temperature sensing device 766, the power source 768, and the sensing device 770 can be similar to those described in reference to Figure 1 The heat source 140, temperature sensing device 142, power source 144, and sensing device 146 are configured as described in more detail.

[0053] The second electrode 750 can be coupled to the chamber body 702. A fluid containment ring 712 can surround the second electrode 750 such that the first processing volume 704 is defined by the second electrode 750, the fluid containment ring 712, and the substrate 710 (when the door 706 is in the processing position). An O-ring 752 can be coupled to the fluid containment ring 712, and the O-ring 752 can be formed of an elastomeric material, such as a polymer, etc. The circumference defined by the O-ring 752 can be sized to contact an exclusion zone of the substrate 710 when the substrate 710 is in the processing position as shown. The O-ring 752 can also be sized to contact an edge of the substrate 710. By contacting the substrate 710, it is contemplated that the O-ring 752 can prevent fluid from leaking out of the first processing volume 704 and reduce or eliminate the possibility of fluid entering the vacuum source 736.

[0054] A process fluid source 716 may be fluidly coupled to the first processing volume 704 via a conduit 714. The conduit 714 may extend from the process fluid source 716 through the chamber body 702 and the fluid containment ring 712 to an inlet 749 adjacent to the first processing volume 704. A valve may be disposed on the conduit 714 between the inlet 749 and the process fluid source 716 to control delivery of the process fluid to the first processing volume 704. A first flushing fluid source 720 may also be fluidly coupled to the first processing volume 704 via the conduit 714. A valve 722 may be disposed on the conduit 714 between the inlet 749 and the first flushing fluid source 720 to control delivery of the flushing fluid to the first processing volume 704. The process fluid source 716 and the first flushing fluid source 720 may be respectively similar to those described in reference to Figure 1 A process fluid source 116 and a flush fluid source 120 are depicted.

[0055] The first drain 728 may be in fluid communication with the first processing volume 704 via the conduit 714. A valve 730 may be disposed on the conduit 714 between the inlet 749 and the drain 728. Given the vertical orientation of the chamber 700, the drain 728 in fluid communication with the first processing volume 704 via the fluid inlet 749 may provide improved efficiency when removing process fluid or flushing fluid from the first processing volume 704. A drain 735 may also be in fluid communication with the first processing volume 704 via a conduit 731. The conduit 731 may extend through the chamber body 702 and the fluid containment ring 712 to a fluid outlet 748 adjacent to the first processing volume 704. A valve 733 may be disposed on the conduit 731 between the outlet 748 and the drain 735.

[0056] In operation, a process fluid may be provided from a process fluid source 716 to the first processing volume 704, and an iFGPEB process may be performed. When the first processing volume 704 is filled with a liquid process fluid, any gaseous fluid in the first processing volume 704 may rise toward the fluid outlet 748. Thus, the gaseous fluid may be removed from the first processing volume 704 by the exhaust device 735. After the iFGPEB process, the process fluid may be removed from the first processing volume 704 via the fluid inlet 749 and the exhaust port 728. Optionally, a rinse fluid supplied to the first processing volume 704 via the first rinse fluid source 720 may subsequently be used for the substrate 710 in the processing position. Similar to the process fluid, the rinse fluid may be removed from the first processing volume 704 via the fluid inlet 749 and the exhaust port 728.

[0057] The second rinsing fluid source 778 may be in fluid communication with the second processing volume 754 via a conduit 774. The conduit 774 may extend from the second rinsing fluid source 778 through the sidewall 794 to the outlet 780. A valve 776 may be disposed on the conduit 774 between the outlet 780 and the second rinsing fluid source 778 to control the delivery of rinsing fluid to the second processing volume 754. In one embodiment, after iFGPEB processing of the substrate 710 in the illustrated processing position, the door 706 may be moved away from the processing position along the X-axis so that the substrate 710 is positioned in an X-axis plane similar to the outlet 780 (i.e., the rinsing position). Once the substrate 710 is positioned in the rinsing position, rinsing fluid from the second rinsing fluid source 778 may be delivered to the second processing volume 754 and the substrate 710. During and / or after rinsing, the substrate 710 may be spun by the motor 772 to discharge rinsing fluid and other fluids / particles from the substrate 710.

[0058] The second drain port 788 may also be in fluid communication with the second processing volume 754. The second drain port 788 may be fluidly coupled to the second processing volume 754 via a conduit 784 extending from the second drain port 788 through the sidewall 794 to the inlet 790. A valve 786 may be disposed on the conduit 784 between the inlet 790 and the second drain port 788 to control the removal of fluid / particles from the second processing volume 754. In operation, rinsing fluid from the second rinsing fluid source 778 may rinse the substrate 710 and be removed from the second processing volume 754 via the second drain port 788.

[0059] A purge gas source 758 may also be in fluid communication with the second processing volume 754. The purge gas source 758 may be fluidly coupled to the second processing volume 754 via a conduit 756 extending from the purge gas source 758 through the sidewall 794 to the outlet 782. A valve 760 may be disposed on the conduit 756 between the outlet 782 and the purge gas source 758 to control the delivery of the purge gas to the second processing volume 754. In operation, a purge gas may be provided during iFGPEB processing and / or during rinsing of the substrate 710 to prevent particle accumulation within the processing volumes 704, 754. The purge gas from the purge gas source 758 may be removed from the processing volumes 704, 754 via an exhaust 735.

[0060] Figure 8A cross-sectional view of an immersion field guided post-exposure bake chamber 800 according to one embodiment described herein is schematically shown. Chamber 800 is similar to chamber 700, however, chamber 800 is oriented in a horizontal position rather than a vertical position. A door 802 having a first electrode 708 coupled thereto can be slidably coupled to a lifting member 804. Door 802 is shown in a processing position and can be moved vertically away from cover 796 along the Z axis with lifting member 804 to a non-processing position. In the non-processing position, door 802 can be rotated 180° around the X axis so that the first electrode 708 and substrate 710 are disposed above door 802 (i.e., loading position). In the loading position, a substrate can be positioned on and removed from the first electrode 708. In operation, substrate 710 can be fastened to the first electrode 708 when door 802 is in the loading position, and the door can be rotated 180°. The lifting member 804 can lower the door 802 along the Z-axis to the processing position shown, and the iFGPEB process can be performed.

[0061] Fig. 9 Operations of a method 900 for performing an iFGPEB process are shown. At operation 910, a substrate may be positioned on a first electrode. The first electrode may be preheated before positioning the substrate on the first electrode. At operation 920, a process fluid may be introduced into a processing volume containing the substrate. The process fluid may also be preheated to a processing temperature before being introduced into the processing volume. At operation 930, a second electrode may be moved to a processing position. Positioning the second electrode may be performed before, during, or after the introduction of the process fluid in operation 920.

[0062] At operation 940, an electric field may be applied to the substrate via the first electrode and / or the second electrode. In one embodiment, the field may be applied to the substrate for an amount of time between about 60 seconds and about 90 seconds. After the field is applied, at operation 950, the process fluid may be discharged and a rinse fluid may be introduced. The rinse fluid may be removed from the substrate by spinning the substrate and then discharged from the processing volume. A purge gas may be introduced into the processing volume during or after the rinse and spin. The purge gas may provide improved particle reduction after utilizing the process fluid and the rinse fluid. The second electrode may also be returned to a non-processing position, and the substrate may be removed from the processing chamber. After removal from the processing chamber, the substrate may be positioned on a cooling pedestal to cool the substrate to room temperature before subsequent processing.

[0063] While the foregoing is directed to embodiments of the present disclosure, additional and further embodiments of the disclosure may be devised without departing from the basic scope of the disclosure, and the scope of the disclosure is to be determined by the claims that follow.

Claims

1. A substrate processing method, comprising: positioning a substrate on a first electrode within a processing volume; moving a second electrode to a processing position adjacent the substrate, wherein a dielectric containment ring is coupled to the second electrode; introducing a process fluid into the process volume through the dielectric containment ring; generating an electric field between the first electrode and the second electrode, and applying the electric field to the substrate via the processing fluid; removing the treatment fluid from the treatment volume; introducing a flushing fluid into the treatment volume; rotating the substrate to remove the rinse fluid from the substrate; as well as The flushing fluid is removed from the processing volume.

2. The method of claim 1, wherein a purge gas is introduced into the processing volume during rotation of the substrate.

3. The method of claim 1, wherein a purge gas is introduced into the processing volume during the removal of the flushing fluid from the processing volume.

4. The method of claim 1, wherein the first electrode is preheated before positioning the substrate on the first electrode.

5. The method of claim 1, wherein the treatment fluid is preheated prior to said introducing the treatment fluid into the treatment volume.

6. A substrate processing method, comprising: positioning a substrate on a first electrode within a processing volume; moving a second electrode to a processing position adjacent the substrate, wherein a dielectric containment ring is coupled to the second electrode; introducing a process fluid into the process volume through the dielectric containment ring, wherein said moving the second electrode to the process position is performed before, during, or after said introducing the process fluid into the process volume; generating an electric field between the first electrode and the second electrode, and applying the electric field to the substrate via the processing fluid; as well as The treatment fluid is removed from the treatment volume.

7. The method of claim 1, wherein applying the electric field to the substrate is performed for an amount of time between 60 seconds and 90 seconds.

8. A substrate processing method, comprising: positioning a substrate on a first electrode within a processing volume; moving a second electrode to a processing position adjacent the substrate, wherein a dielectric containment ring is coupled to the second electrode; introducing a process fluid into the process volume through the dielectric containment ring; generating an electric field between the first electrode and the second electrode, and applying the electric field to the substrate via the processing fluid; removing the treatment fluid from the treatment volume; removing the substrate from the processing volume; as well as The substrate is positioned on a cooling pedestal.

9. A substrate processing method, comprising: positioning a substrate on a first electrode within a processing volume; moving the first electrode to a processing position adjacent to a second electrode disposed in the processing volume, wherein a dielectric containment ring is coupled to the second electrode; introducing a process fluid into the process volume between the substrate and the second electrode through the dielectric containment ring; generating an electric field between the first electrode and the second electrode, and applying the electric field to the substrate via the processing fluid; removing the treatment fluid from the treatment volume; introducing a flushing fluid into the treatment volume; rotating the substrate to remove the rinse fluid from the substrate; as well as The flushing fluid is removed from the processing volume.

10. The method of claim 9, wherein a purge gas is introduced into the processing volume during the spinning of the substrate or during the removal of the rinse fluid from the processing volume.

11. The method of claim 9, wherein the first electrode is preheated prior to said positioning a substrate on the first electrode or prior to said introducing a process fluid into the process volume.

12. A substrate processing method, comprising: positioning a substrate on a first electrode within a processing volume; moving the first electrode to a processing position adjacent to a second electrode disposed in the processing volume, wherein a dielectric containment ring is coupled to the second electrode; introducing a process fluid into the processing volume between the substrate and the second electrode through the dielectric containment ring, wherein the moving the first electrode to the processing position is performed before, during, or after the introducing the process fluid into the processing volume; as well as An electric field is generated between the first electrode and the second electrode, and applied to the substrate via the processing fluid.

13. A substrate processing method, comprising: positioning a substrate on a first electrode coupled to a chamber door; rotating the chamber door to a processing position in which the spindle of the substrate is oriented vertically; delivering a process fluid to a process volume, wherein the process volume is at least partially defined by the chamber sidewall and the second electrode; as well as An electric field is generated between the first electrode and the second electrode, and applied to the substrate via the processing fluid.

14. The method of claim 13, wherein positioning the substrate on the first electrode comprises: The substrate is vacuum chucked to the first electrode.

15. The method of claim 13, wherein the process fluid is delivered to the process volume via a fluid inlet formed in a sidewall of the chamber.

16. The method of claim 13, further comprising: removing the treatment fluid from the treatment volume; introducing a flushing fluid into the treatment volume; rotating the substrate to remove the rinse fluid from the substrate; as well as The flushing fluid is removed from the processing volume.

17. The method of claim 16, wherein a purge gas is introduced into the processing volume during the spinning of the substrate or during the removal of the rinse fluid from the processing volume.

18. The method of claim 13, wherein the first electrode is preheated prior to said positioning a substrate on the first electrode or prior to said delivering a process fluid to the process volume.

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