Wafer processing apparatus capable of supplying purge gas

Abstract

The present invention discloses a wafer processing apparatus, comprising: one or more processing stations, each of the processing stations including an upper cover, a spacer ring, and a spraying assembly, wherein the spacer ring is disposed between the upper cover and the spraying assembly, and is characterized in that the upper cover, the spacer ring, and the spraying assembly together form a purge gas path of the processing station, and the purge gas path is used to form a flow curtain in the processing station.

Description

Technical Field

[0001] The present invention relates to a wafer processing apparatus, and more particularly to an apparatus capable of introducing a purge gas through an upper portion of a chamber into a wafer processing region or around the wafer processing region to form a flow curtain. Background Art

[0002] In known semiconductor processing equipment, a multi-station processing chamber is designed to increase semiconductor production capacity. The multi-station processing chamber is a single chamber having a plurality of processing stations that surround a robot turntable and are fluidly connected to each other. Each station has its own spray assembly, pumping system, heating assembly, etc., so that these stations can perform specific processes independently or perform the same process together to optimize production efficiency. Generally, during the wafer manufacturing process, a specific gas (such as an inert gas) needs to be transferred into the chamber where the wafer is located to achieve different processes, such as a non-reactive gas commonly used to balance the pressure between chambers, or a purge gas that can be introduced to isolate the gas flow between chambers.

[0003] In the design of a general chamber, a large number of components are included in the top of the chamber and the spray assembly, which are crowded at the top of the chamber. Therefore, it is difficult to integrate the path for providing the purge gas into the known design. For the processing requirements of the multi-station processing chamber, generally, a purge gas is needed to set up a barrier between stations, such as a flow curtain, to prevent material interference between adjacent stations performing different processes and reduce the product yield.

[0004] In view of this, there is a need to develop a design that can integrate the purge gas path into a general wafer processing apparatus. Summary of the Invention

[0005] To solve the above problems, one concept of the present invention is to provide a wafer processing apparatus, comprising: one or more processing stations, the processing station comprising an upper cover, an isolation ring, and a spray assembly, wherein the isolation ring is disposed between the upper cover and the spray assembly, and characterized in that the upper cover, the isolation ring, and the spray assembly jointly form a purge gas path of the processing station, and the purge gas path is used to form a flow curtain in the processing station.

[0006] In a preferred embodiment of the present invention, the wafer processing apparatus further comprises: a distributor connected to the processing station, the distributor transmitting a first gas so that the first gas passes through the purge gas path to the processing station; and a first heater connected to the distributor, the first heater heating the first gas before the first gas is transmitted to the processing station.

[0007] In a preferred embodiment of the present invention, the purge gas path includes: a first connection path that extends horizontally in the upper cover; a first diffusion channel that communicates with the first connection path and surrounds the isolation ring; a second diffusion channel that surrounds the spray assembly; a second connection path that communicates the first diffusion channel with the second diffusion channel; and a third connection path that communicates the second diffusion channel with a processing area of the processing station.

[0008] In a preferred embodiment of the present invention, the first diffusion channel is defined and formed by the upper cover and the isolation ring, the second diffusion channel is defined and formed by the isolation ring and the spray assembly, and the horizontal height of the first diffusion channel is higher than the horizontal height of the second diffusion channel.

[0009] In a preferred embodiment of the present invention, the first heater is connected upstream or downstream of the dispenser.

[0010] In a preferred embodiment of the present invention, the first gas is an inert gas.

[0011] The foregoing aspects and other aspects of the present invention will become more apparent from the following non-limiting specific embodiments and with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 FIG. [X] is a specific embodiment of a wafer processing apparatus of the present invention.

[0013] Figure 2 FIG. [X] is a sectional view of one station of the wafer processing apparatus of the present invention.

[0014] Figure 3 FIG. [X] is a partial sectional view of the wafer processing apparatus of the present invention, showing the relationship between the spray assembly and the upper cover of the chamber.

[0015] Figure 4 FIG. [X] is a specific embodiment of a dispenser and a heater disposed at the top of the wafer processing apparatus of the present invention.

[0016] Figure 5 FIG. [X] is another specific embodiment of a dispenser and a heater disposed at the top of the wafer processing apparatus of the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0017] Please refer to Figure 1 FIG. [X], which illustrates a schematic diagram of a specific embodiment of a wafer processing apparatus according to the present invention. As shown in Figure 1In the illustrated embodiment, the wafer processing apparatus 100 is particularly a multi-station processing chamber, including a dispenser 110, a heater 120, six processing stations 130, 140, 150, 160, 170, 180, and transfer ports 132, 142. Each of the processing stations 130, 140, 150, 160, 170, 180 has a processing area (not shown) therein, and each processing area can be used to process a wafer. The dispenser 110 is disposed on the top cover of the processing chamber and is connected upstream to a gas source for generating purge gas. A heater 120 is also connected between the dispenser 110 and the gas source. The heater 120 can be a heat exchange device for heating the gas from the gas source. The heater 120 can also employ insulation means to avoid heat loss. The dispenser 110 is connected downstream to the purge gas paths of the corresponding processing stations via three ends as shown (such as Figure 3 ), and the purge gas paths of each station are respectively connected to the corresponding processing areas. The dispenser 110 transmits the purge gas to each processing station via the purge gas paths. The heater 120 can heat the gas to meet the ambient temperature of each processing station before the gas is transmitted to each processing station.

[0018] In a specific embodiment, a wafer can be placed into the wafer support in the front-end processing station 130 by the front end of a robotic finger via the transfer port 132, and a wafer can be placed into the wafer support in the processing station 140 by the front end of the robotic finger via the transfer port 142. In a specific embodiment, the processing station 130 can be used as the first processing station, and the processing station 140 can be used as the second processing station. The internal configurations of the first processing station and the second processing station can be the same. For example, the configurations of the first support seat, the first spray assembly, and the ring in the first processing station can be the same as those of the second support seat, the second spray assembly, and the second wall portion in the second processing station. It should be understood that the wafer processing apparatus may not only have six stations, but can have any number of stations as required, and the internal configurations of the processing stations of the wafer processing apparatus can be the same.

[0019] Please refer to Figure 2 , which illustrates a cross-sectional view of one of the processing stations of the wafer processing apparatus according to the present invention. As Figure 2In the illustrated embodiment, the processing station 230 includes a wafer support disk 231, a shower plate 233, an isolation ring 235 for isolating heat and radio frequency signals in the chamber, a reaction gas channel 237, a purge gas path 238, and a wafer carrying surface 239. The wafer can be placed on the wafer support disk 231 by a mechanical finger (not shown) in the chamber. The processing station 230 can transmit the reaction gas for processing to the shower plate 233 via the reaction gas channel 237, and then the reaction gas is evenly diffused to the wafer surface by the nozzles (not shown) of the shower plate 233. The isolation ring 235 generally surrounds the upper part of the wafer processing area with the reaction gas channel 237 as the axis. The purge gas path 238 communicates with the processing area, and the purge gas path 238 extends along the wall 235, as detailed in Figure 3 shown. In a specific embodiment, as shown in Figure 1 , the dispenser 110 is connected downstream to the purge gas path 238 and can transmit a purge gas (such as an inert gas) so that the purge gas is transmitted to the processing area in the chamber or its surroundings via the path 238.

[0020] Please refer to Figure 3 , which illustrates a partial cross-sectional view of one of the processing stations of the wafer processing apparatus according to the present invention. As specifically shown in the embodiment of Figure 3 , the end 310 of the dispenser is connected downstream to the first purge gas path 330, which is connected to a processing area 340 in the processing station. Thus, the end 310 of the dispenser can transmit a first gas (in a specific embodiment, the first gas is an inert gas) so that the first gas is transmitted to the processing area 340 via the purge gas path 330. In the Figure 3 illustrated embodiment, the purge gas path 330 includes a first connection path 331 (the first connection path 331 can also be regarded as a part of the first diffusion chamber 333), a first diffusion channel 333, a second connection path 335, a second diffusion channel 337, and a third connection path 339. The first diffusion channel 333 and the second diffusion channel 337 surround the shower assembly 350 along an isolation ring 320 with the center of the processing station as the axis. The first connection path 331 connects the end 310 of the dispenser to the first diffusion channel 333. The second connection path 335 is connected between the first diffusion channel 333 and the second diffusion channel 337. The third connection path 339 is connected between the second diffusion channel 337 and the processing area 340 of the station.

[0021] More specifically, the first connection path 331 extends horizontally in an upper cover 370 of the processing chamber. The first diffusion channel 333 is defined by the upper cover 370 and a spacer ring 320. The spacer ring 320 is an independent annular structure and is disposed between the upper cover 370 and the spraying assembly 350. A gasket 360 is also provided between the upper cover 370 and the spraying assembly 350, which provides an airtight means. As shown in the figure, a gap is defined between the upper end and the inner side of the spacer ring 320 and a part of the upper cover 370, the gasket 360, and the spraying assembly 350, so that the first diffusion channel 333 communicates with the second diffusion channel 337. There is no gap between the lower half of the outer side of the spacer ring 320 and the upper cover 370. The second diffusion channel 337 is defined between the spacer ring 320 and the spraying assembly 350 and is lower than the horizontal height of the first diffusion channel 333. The third connection path 339 is defined by a tapered part of the lower half of the wall 320 and a part of the spraying assembly 350 and winds to the cavity space of the processing station. Thereby, after the purge gas enters the upper cover 370 of the chamber, it is first transmitted horizontally, and then annularly diffuses in the first diffusion channel 333 before being transmitted upward. The purge gas is transmitted downward after crossing the upper part of the spacer ring 320 and diffuses in the second diffusion channel 337. Finally, the purge gas enters the processing area 340 along the winding path of the third connection path 339 and can form a flow curtain around the processing area 340, so that the processing station and the adjacent processing stations can be fluidly isolated.

[0022] In Figure 3 the illustrated embodiment, the first connection path 335 and / or the third connection path 339 are centered around a center of the processing station and surround the spacer ring 320. In a specific embodiment, the first diffusion channel 333 has a first diffusion channel width, the second diffusion channel 337 has a second diffusion channel width, the second connection path 335 has a first connection path width, and the third connection path 339 has a second connection channel width. As shown in the figure, both the first diffusion channel width and the second diffusion channel width are longitudinally greater than the first connection path width. When the first gas is transmitted to the first diffusion channel 333, the first gas will first diffuse in the first diffusion channel 333, which will help to more uniformly transmit the first gas to the second diffusion channel 337 via the second connection path 335. In a specific embodiment, the second diffusion channel width is greater than the second connection path width. Thereby, when the first gas is transmitted to the second diffusion channel 337, the first gas will first diffuse in the second diffusion channel 337, which will help to more uniformly transmit the first gas to the periphery of the processing area 340 via the third connection path 339. In a specific embodiment, the second diffusion channel width is also greater than the first connection channel width.

[0023] Please refer to Figure 4 , which illustrates, for example, as Figure 1A specific embodiment of the dispenser and heater of a wafer processing apparatus. As Figure 4 shown in the embodiment, a single heater 520 is connected downstream to a dispenser 510 and upstream to a gas source (not shown). The dispenser 510 has a first end 512, a second end 514, and a third end 516. In a specific embodiment, the first end 512 of the dispenser 510 is connected to the purge gas path of a pair of processing stations, the second end 514 of the dispenser 510 is connected to the purge gas path of another pair of processing stations, and the third end 516 of the dispenser 510 is connected to the purge gas path of yet another pair of processing stations. Thus, the dispenser 510 can transmit the first gas to the corresponding chamber space through the first end 512, transmit the first gas to the corresponding chamber space through the second end 514, and can transmit the first gas to the corresponding chamber space through the third end 516. In a specific embodiment, the first gas is mainly an inert gas. In Figure 4 the embodiment shown, the heater 520 is configured to heat the first gas before it is transmitted to each chamber space.

[0024] Please refer to Figure 5 , which replaces Figure 1 Another specific embodiment of the dispenser and heater of a wafer processing apparatus. As Figure 5 shown in the embodiment, the end of the dispenser 610 is connected to a first heater 620, a second heater 630, and a third heater 640. The first heater 620 is connected to the chamber space of the first processing station, the second heater 630 is connected to the chamber space of the second processing station, and the third heater 640 is connected to the chamber space of the third processing station. That is, the dispenser 610 is connected to the first pair of processing stations through the first heater 620, the dispenser 610 is connected to the second pair of processing stations through the second heater 630, and the dispenser 610 is connected to the third pair of processing chambers through the third heater 640. In this way, the first heater 620 can heat before the first gas is transmitted to the chamber space. The second heater 630 can heat before the first gas is transmitted to the chamber space. The third heater 640 can heat before the first gas is transmitted to the chamber space.

[0025] So far, the wafer processing apparatus of the present invention has been described by the above description and drawings. However, it should be understood that each specific embodiment of the present invention is only for illustrative purposes, and various changes can be made without departing from the scope and spirit of the patent application of the present invention, and all should be included in the patent scope of the present invention. Therefore, the specific embodiments described in this specification are not used to limit the present invention, and the true scope and spirit of the present invention are disclosed in the following patent application scope.

Claims

1. A wafer processing apparatus, characterized in that, comprising: one or more processing stations, each processing station comprising an upper cover, a spacer ring and a spray assembly, wherein the spacer ring is disposed between the upper cover and the spray assembly, and the upper cover, the spacer ring and the spray assembly together form a purge gas path of the processing station, and the purge gas path is used to form a flow curtain in the processing station; wherein, the purge gas path comprises: a first connection path, extending horizontally in the upper cover; a first diffusion channel, communicating with the first connection path and surrounding the spacer ring; a second diffusion channel, surrounding the spray assembly; a second connection path, communicating the first diffusion channel and the second diffusion channel; a third connection path, communicating the second diffusion channel and a processing area of the processing station; wherein, after the purge gas enters the upper cover, it first travels horizontally along the first connection path, diffuses annularly in the first diffusion channel, and then travels downward after passing over the upper part of the spacer ring and diffuses in the second diffusion channel.

2. The wafer processing apparatus according to claim 1, characterized in that, further comprising: a dispenser, connected to the processing station, the dispenser transmitting a first gas so that the first gas reaches the processing station via the purge gas path; and a first heater, connected to the dispenser, the first heater heating the first gas before it is transmitted to the processing station.

3. The wafer processing apparatus according to claim 1, characterized in that: wherein the first diffusion channel is defined and formed by the upper cover and the spacer ring, the second diffusion channel is defined and formed by the spacer ring and the spray assembly, and the horizontal height of the first diffusion channel is higher than the horizontal height of the second diffusion channel.

4. The wafer processing apparatus according to claim 2, characterized in that: wherein the first heater is connected upstream or downstream of the dispenser.

5. The wafer processing apparatus according to claim 2, characterized in that: wherein the first gas is an inert gas.

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