Equipment for heat treatment, a substrate processing system, a carrier for supporting a substrate during substrate processing, and a method for inductively heating a carrier in a substrate processing system

Abstract

Describes an apparatus for heat treatment of a carrier in a substrate processing system. The apparatus includes a heating arrangement configured to provide thermal energy to the carrier, the heating arrangement including one or more coils.

Description

Technical Field

[0001] The present disclosure generally relates to substrate processing, such as large-area substrate processing. In particular, the present disclosure relates to substrate processing on a carrier that holds a substrate in a substrate processing apparatus. Additionally, the present disclosure relates to an apparatus for heat treatment, a substrate processing system, and a method for processing a substrate. For example, embodiments may relate to heating a conductive carrier to stabilize a vacuum deposition process. In particular, the present disclosure relates to an apparatus for heat treatment of a carrier (e.g., a carrier for holding a substrate such as a large-area substrate in a processing system).

[0002] Background

[0003] Techniques for depositing a layer on a substrate include, for example, sputter deposition, thermal evaporation, and chemical vapor deposition. The sputter deposition process can be used to deposit a material layer, such as a conductive material or an insulating material layer, on a substrate. The coated material can be used in several applications and several technical fields. For example, one application falls within the microelectronics field, such as for fabricating semiconductor devices. Also, substrates for displays are typically coated by physical vapor deposition (e.g., the sputter deposition process) or chemical vapor deposition (CVD). Additional applications include insulating panels, substrates with TFTs, color filters, or the like.

[0004] A substrate processing system can include an atmospheric section (e.g., a cleanroom), one or more vacuum chambers, and a load lock chamber for loading a substrate from the atmospheric section into the one or more vacuum chambers. The load lock chamber may often be evacuated and vented to load and / or unload a substrate. Additionally, especially for large-area substrates, two different concepts can be provided. On the one hand, the substrate can be directly transported by a robot or the like. On the other hand, the substrate can be loaded onto a carrier (substrate carrier), and the substrate carrier that supports the substrate can be transported in a vacuum processing system. Although the carrier adds equipment to be guided through the system and may have some disadvantages, the carrier has the advantage of reducing glass breakage, especially when considering substrates having a substrate area of up to several square meters and a thickness of less than 1 mm (such as a few tens of millimeters).

[0005] A vacuum processing system can provide a cycle of a substrate from atmosphere to vacuum and back to atmosphere. This may, for example, cause absorption of water from the atmosphere. The water may distort during the vacuum processing of the substrate and may make the deposition process unstable, which may cause, for example, different layer properties. For example, water may affect the material properties of the layer deposited on the substrate. Radiative heating of the carrier that supports the substrate (such as infrared heating) may cause direct heating of the substrate edges.

[0006] In view of the above, it is beneficial to have an apparatus, a system, and a method that overcome at least some of the problems in the art.

[0007] Overview

[0008] In view of the above, an apparatus for heat treating a carrier in a substrate processing system, a substrate processing system, and a carrier for supporting a substrate during substrate processing are provided. Further details, features, aspects, modifications, and embodiments can be found in the dependent claims, the detailed description, and the drawings.

[0009] According to one embodiment, an apparatus for heat treating a carrier in a substrate processing system is provided. The apparatus includes a heating arrangement configured to provide thermal energy to the carrier, the heating arrangement including one or more coils.

[0010] According to one embodiment, an apparatus for heat treating a carrier in a substrate processing system is provided. The apparatus includes a heating arrangement having one or more coils disposed around and / or outside a substrate receiving area.

[0011] According to one embodiment, a substrate processing system is provided. The substrate processing system includes an apparatus for heat treating a carrier in the substrate processing system. The apparatus includes a heating arrangement configured to provide thermal energy to the carrier, the heating arrangement including one or more coils.

[0012] According to one embodiment, a carrier for supporting a substrate during substrate processing is provided. The carrier includes: a frame configured to support the substrate in a substrate processing area, the frame having a first material with a first conductivity; and a shield for the frame, the shield having a second material with a second conductivity lower than the first conductivity.

[0013] Embodiments also relate to apparatuses for performing the disclosed methods and include apparatus portions for performing each described method aspect. These method aspects can be performed by means of hardware components, a computer programmed with suitable software, any combination of the two, or in any other manner.

[0014] Brief Description of the Drawings

[0015] To understand the above features of the present disclosure in detail, a more particular description of the present disclosure briefly outlined above can be obtained by referring to the embodiments. The drawings relate to embodiments of the present disclosure and are described as follows:

[0016] Figure 1 A top view of a processing system according to an embodiment described herein is shown;

[0017] Figure 2A The front view of the carrier of the carrier substrate according to the embodiments described herein is shown;

[0018] Figure 2B The top view of the carrier of the carrier substrate according to the embodiments described herein is shown;

[0019] Figures 3A to 3C The area and the carrier prone to heat treatment according to the embodiments described herein are shown;

[0020] Figure 4 The top view of the substrate processing system according to the embodiments described herein is shown; and

[0021] Figure 5 The flowchart of the method according to the embodiments described herein is shown.

[0022] Detailed description of the embodiments

[0023] Reference will now be made in detail to various embodiments of the present disclosure, one or more examples of which are illustrated in the accompanying drawings. In the following description of the drawings, like reference numerals refer to like components. Only the differences relative to individual embodiments are described. Each example is provided in an explanatory manner of the present disclosure and is not intended to be a limitation of the present disclosure. Additionally, features illustrated or described as part of one embodiment may be used on or in combination with other embodiments to yield yet another embodiment. The specification is intended to include such modifications and variations.

[0024] Embodiments of the present disclosure provide an apparatus for heat treatment of a carrier. The apparatus includes a heating arrangement for inductively heating the carrier, and in particular a heating arrangement including one or more coils. Inductive heating of the carrier under atmosphere or inside a vacuum maintains the carrier temperature for avoiding water absorption or for releasing water collected at the carrier. According to embodiments of the present disclosure, inductive heating occurs only in a metal carrier. Compared with the method using thermal radiation, direct heating of the substrate edge can be avoided.

[0025] Carriers for supporting substrates in a vacuum processing system may absorb molecules (such as water molecules), which may adversely affect the vacuum processing of the substrates. For example, a carrier may be provided for processing multiple substrates. The carrier can be transported to a substrate loading station outside the vacuum chamber of the vacuum processing system to receive a substrate, and can be transported back into the vacuum chamber of the vacuum processing system with a new substrate to be processed. During the processing of the substrate, for example, during a coating process, the material to be deposited on the substrate may also be deposited on the carrier. Each time the process is carried out, the carrier will be coated. The coating on the carrier will grow, and simultaneously, the absorption of atmospheric water will increase. That is, the surface of the carrier that is cycled in and out of the vacuum chamber of the vacuum processing system may have an increasingly thick layer of deposited material. The material accumulated on the carrier increases the surface available for absorption or the absorption of molecules (such as water molecules). Therefore, it is beneficial to release such molecules from the carrier, especially in a vacuum processing system where the carrier is repeatedly introduced from atmospheric conditions into the vacuum chamber of the vacuum processing system.

[0026] Figure 1 A top view of a substrate processing system 100 according to an embodiment described herein is shown. The processing system may include modules. The modules may be or include chambers. The processing system includes one or more atmospheric modules 170. The atmospheric module may include a swing module 172. Additionally, the processing system may include one or more load lock modules 174, which may also be referred to herein as "pre-vacuum modules 182". Additionally, the processing system may include one or more transfer modules 180. The one or more transfer modules 180 may include one or more high-vacuum modules 184.

[0027] According to an embodiment described herein, the processing system includes one or more processing modules 190. Vacuum conditions may be applied to the one or more processing modules 190 and / or the transfer modules 180 and / or the load lock modules 174. The load lock modules 174, which include the pre-vacuum module 182 and the high-vacuum module 184, the processing modules 190, and / or the transfer modules 180 may include chambers. The processing system may be used to process substrates 230.

[0028] The processing of a substrate can be understood as transferring material to the substrate. For example, a deposited material can be deposited on the substrate, for example, by a CVD process or a PVD process (such as sputtering or evaporation). The substrate 230 may include a deposited material receiving side. The deposited material receiving side of the substrate can be regarded as the side of the substrate facing the deposition source. Additionally, the processing of the substrate may also include etching, cleaning, or heat treatment of the substrate.

[0029] According to the embodiments described herein, the atmosphere module 170 can be connected to one or more transfer modules 180. Additionally or alternatively, the atmosphere module 170 can be connected to one or more processing modules 190. For example, the load lock module 174 can connect the atmosphere module to one or more high-vacuum modules 184 and / or processing modules 190. The load lock module or chamber can help equalize the pressure difference between the modules. For example, atmospheric pressure is applied in one module, and a vacuum is applied in a module connected to the one module via the load lock module.

[0030] The substrate processing system 100 can include a transport arrangement 160 for transporting one or more substrates 230. In particular, the transport arrangement 160 can include a transport path 162 extending through the processing system. For example, one or more substrates 230 can be transported from the atmosphere module to one or more processing modules. Additionally, one or more substrates can be transported between one or more processing modules. For example, multiple substrates can be transported. In particular, one or more substrates and / or multiple substrates can be cycled through the substrate processing system 100. For example, the substrate can be cycled between the atmosphere module and one or more processing modules. For example, such transport can be along the transport path and / or along a transport loop. According to embodiments of the present disclosure, the substrate is transported while being supported by a carrier, for example, the substrate can be cycled.

[0031] Additionally, a pre-vacuum module can be arranged between the atmosphere module and one or more processing modules. The atmosphere module can include atmospheric conditions. For example, the air pressure in the load module can include atmospheric pressure. Thus, particles (such as O2, H2O, and N2) can be present in the atmosphere module or outside a vacuum chamber generally in a vacuum chamber. Compared with the atmosphere module, the pre-vacuum module can include different pressure conditions. For example, the pre-vacuum chamber includes a lower pressure condition. The pressure in the pre-vacuum chamber can be less than 10 -1 mbar. The pre-vacuum chamber can be connected to one or more processing chambers. Compared with the atmosphere module and / or the pre-vacuum chamber, the processing chamber can include different pressure conditions. A load lock module can be arranged between the pre-vacuum chamber and the processing chamber. For example, the processing chamber can include a vacuum condition.

[0032] As used herein, the vacuum condition includes a pressure condition in the range of less than 10 -1 mbar or less than 10 -3 mbar, such as from 10 -7 mbar to 10 -2 mbar. For example, the vacuum condition in the load lock module can be between the atmospheric pressure condition and the sub-atmospheric pressure condition (e.g., at 10 -1 mbar or less than 10 -1switch between within the range of millibars). To transfer the substrate into the high-vacuum module, the substrate can be inserted into the load-lock module set at atmospheric pressure, the load-lock module can be sealed, and then, the load-lock module can be set at a sub-atmospheric pressure within the range of less than 10 -1 millibars. Subsequently, the opening between the load-lock chamber and the high-vacuum module can be opened, and the substrate can be inserted into the high-vacuum module to transport the substrate to the processing module.

[0033] In addition, the vacuum conditions in the processing module can include a process pressure condition at or below 10 -2 millibars, such as 10 -3 millibars to 10 -4 millibars or the like. The base pressure conditions in the processing module can be within the range of 10 -7 millibars to 10 -6 millibars, especially within the range of 10 -7 millibars to 5 * 10 -6 millibars. The vacuum conditions can be applied by using a vacuum pump or other vacuum generation techniques.

[0034] According to the embodiments described herein, one or more processing modules or chambers can include one or more deposition sources 220. If there are more than one deposition source, the deposition sources can be arranged in an array. For example, the deposition sources are arranged adjacent to each other. The deposition sources can vertically extend in length. According to an embodiment, one or more deposition sources can be rotatably fixed to the bottom side of the processing module. In particular, there can be two to ten deposition sources in one or more processing chambers. More particularly, there can be three or more deposition sources in one or more processing chambers.

[0035] Introducing a new substrate into the processing system may change the outgassing behavior and particle load or gas level in the processing system. According to the embodiments of the present disclosure, the particle load can be changed not only by the particles entering the system by attaching to the substrate. Absorbing particles into additional process components (such as a carrier for example) further increases the particle load. The embodiments of the present disclosure provide an apparatus in which a reduced particle load is provided for components (such as a carrier) in a dedicated manner.

[0036] According to the embodiments described herein, the processing system further includes an apparatus 200 for heat treatment. The apparatus can be located at and / or near the processing system, for example, in at least one or more of the atmospheric module, the load-lock module, the high-vacuum module, and the transfer module, for example, in or not in a vacuum environment. Additionally or alternatively, the apparatus can be located inside the processing system. The apparatus can include one or more heating arrangements.

[0037] Figure 2AA front view of a carrier according to an embodiment described herein is shown. According to an embodiment described herein, one or more substrates 230 may be carried by a carrier 212 through a substrate processing system 100. The carrier 212 may be transported via a transport arrangement in the processing system. The system may include a plurality of carriers 212 each carrying a plurality of substrates 230. Each carrier 212 may carry one substrate. The plurality of carriers may be transported through the processing system simultaneously.

[0038] According to an embodiment described herein, the carrier includes one or more edge portions 214. The edge portions 214 extend outside the substrate receiving area. Additionally, the carrier 212 may carry a substrate 230. The substrate may be loaded onto the carrier. In particular, the substrate may be loaded in the substrate receiving area 232. The substrate 230 may be attached to the carrier 212 via a holding arrangement 218 such as a clamp or a mount. For example, the holding arrangement connects the carrier to the substrate. The holding arrangement may include a mount. The mount may connect the carrier and the substrate. The holding arrangement may mechanically connect the substrate and the carrier. Additionally or alternatively, the holding arrangement may electrostatically connect the substrate to the carrier.

[0039] Additionally or alternatively and according to an embodiment described herein, the carrier may include or be an electrostatic chuck (E-chuck). The E-chuck may have a support surface for supporting the substrate 230 on the E-chuck. In one embodiment, the E-chuck includes a dielectric body having electrodes embedded in the dielectric body. The dielectric body may include a dielectric material, preferably a high thermal conductivity dielectric material (such as pyrolytic boron nitride, aluminum nitride, silicon nitride, aluminum oxide or equivalent materials). In some embodiments, the dielectric body may be made of a polymeric material (such as polyimide). The electrodes may be coupled to a power source that supplies power to the electrodes to control the adsorption force. The adsorption force is an electrostatic force acting on the substrate 230 to fix the substrate 230 on the support surface.

[0040] Generally, the electronic chuck substantially supports the entire surface of the substrate 230, such as the second major surface or the back surface. Bending of the substrate 230 can be avoided because substantially the entire surface is attached to the defined support surface of the E-chuck. The substrate 230 can be supported more stably and the process quality can be improved.

[0041] According to an embodiment that can be combined with other embodiments described herein, the substrate 230 is a large area substrate. The large area substrate may have a size of at least 0.01 m 2 , specifically at least 0.1 m 2 and more specifically at least 0.5 m 2 . For example, the large area substrate or the carrier may be a 4.5 generation (corresponding to a substrate of about 0.67 m 2 (0.73 m × 0.92 m)), a 5th generation (corresponding to about 1.4 m 2Substrate (1.1 m × 1.3 m), 7.5th generation (corresponding to approximately 4.29 m 2 Substrate (1.95 m × 2.2 m), 8.5th generation (corresponding to approximately 5.7 m 2 Substrate (2.2 m × 2.5 m)) or even 10th generation (corresponding to approximately 8.7 m 2 Substrate (2.85 m × 3.05 m)). Even higher generations (such as 11th and 12th generations) and corresponding substrate areas can be implemented similarly.

[0042] One or more substrates can be oriented in a substantially vertical position. As used throughout this disclosure, "substantially vertical" is understood, particularly when referring to substrate orientation, to allow a deviation of ±20° or less (e.g., ±10° or less) from the vertical direction or orientation. For example, such a deviation can be provided because a substrate support or carrier with a certain deviation from the vertical orientation may result in a more stable substrate position, or a face-down substrate orientation may even better reduce particles on the substrate during deposition. However, the substrate orientation (e.g., during a layer deposition process) is considered to be substantially vertical, which is considered different from a horizontal substrate orientation, which can be considered horizontal ±20° or less. For example, during a deposition process and / or during transportation, one or more substrates can be in a substantially vertical position.

[0043] For example, a deposition material can be transferred from a vertically arranged deposition source to a substantially vertically oriented substrate. The material to be deposited can be coated on the substrate.

[0044] Embodiments of the present disclosure (as Figure 2A and Figure 2B shown) relate to, for example, an apparatus 200 for heat treatment of a carrier 212 in a processing system. The apparatus includes a heating arrangement 240 configured to provide thermal energy to one or more edge portions 214 of the carrier. According to an embodiment of the present disclosure, the heating arrangement includes one or more coils for inductive heating of the carrier. Inductive carrier heating utilizes an electrical process of inductive heating by generating eddy current losses in a conductive material, such as the conductive material of the carrier or a conductive material attached to the carrier. Inductive heating of the carrier under atmospheric conditions or inside a vacuum maintains the carrier temperature for avoiding water absorption or for releasing water collected at the carrier. According to an embodiment of the present disclosure, inductive heating occurs only in a metal carrier. Compared with a method using thermal radiation, heating of the substrate edges can be avoided.

[0045] Figure 2B A top view of a carrier carrying a substrate according to an embodiment described herein is shown. The heating arrangement 240 can be arranged near the carrier. In particular, the heating arrangement can be arranged near the substrate-carrier-arrangement 250.

[0046] According to an embodiment, the apparatus 200 for heat treatment may be arranged such that heat energy reaches the carrier 212. One or more heating arrangements 240 may be configured to supply heat energy to the edge portion 214. For example, the heating arrangement 240 may be arranged on the side where deposition may occur.

[0047] The heating arrangement 240 may supply at least 1 kW / m 2 of heat energy. For example, the heat energy supplied by the heating arrangement ranges between 4 kW / m 2 and 100 kW / m 2 and, in particular, between 4 kW / m 2 and 10 kW / m 2 For example, the carrier may be heated to a temperature of 120 °C. In particular, the carrier may be heated to a temperature of up to 100 °C, more particularly up to 80 °C.

[0048] According to some embodiments, which may be combined with other embodiments described herein, the carrier may include a frame. For example, the frame may include one or more frame portions. The frame may be rectangular, for example, corresponding to a glass substrate for display manufacturing. In particular for higher generations, the frame may include four or more frame portions, such as four corner portions, at least one top bar, at least one bottom bar, and at least two side bars.

[0049] The carrier as described herein may include aluminum or may consist essentially of aluminum. For example, the frame portion may be made of aluminum. The frame portion including aluminum may have a conductivity of 35*10 6 AV -1 m -1 or higher. Thus, the electrical losses due to eddy currents generating heat may be quite low. Therefore, in order to provide the above heat energy, the power supply for generating electrical energy may be configured to provide at least 20 kW.

[0050] Figure 3A The carrier 212 is shown. The carrier provides a frame or edge portion 214 for the substrate 230. The carrier 212 may include a carrier frame 216. The edge portion 214 may provide a frame surrounding the substrate receiving area 232. The carrier frame 216 may show the outermost edge of the carrier 212. The carrier frame 216 may at least partially surround the substrate receiving area 232. Alternatively, the carrier frame 216 may completely surround the substrate receiving area 232. For example, the width of the carrier frame may range between 10 mm and 500 mm. In particular, the width of the carrier frame may range between 50 mm and 400 mm. More particularly, the width of the carrier frame may range between 100 mm and 300 mm.

[0051] The heating arrangement 200 includes a coil 340, such as the coil of an inductor. According to some embodiments, which may be combined with other embodiments described herein, the coil may be a flat coil. For example, one or more windings may be provided in a plane parallel to the surface of the carrier 212. Figure 3A An exemplary winding is shown. Additionally, additional windings may be provided. The coil is excited by a power source 344 that provides an alternating current to generate an alternating magnetic field. According to some embodiments, which may be combined with other embodiments described herein, a matching circuit 342 may be provided to adjust the output power of the power source 344 in response to the impedance of the coil 240.

[0052] The power source 344 for the induction heater includes a circuit having an oscillator circuit. The oscillator topology may include, for example, semiconductor electrical switches such as MOSFETs and / or IGBTs. Additionally, in particular, the matching circuit 342 may include capacitors. Additionally, an inductor (such as the coil 340) may be provided for induction heating.

[0053] According to some embodiments, which may be combined with other embodiments described herein, the operating frequency may be from 2 kHz to 200 kHz. The frequency may be adjusted in response to the heating process. For example, a lower frequency, such as from 2 kHz to 30 kHz, may be used to heat the surface of the carrier and deeper regions of the carrier, i.e., regions below the surface in the bulk material. A higher frequency, such as from 30 kHz to 200 kHz, may be used for surface heating and / or for a shielded carrier, as described below. According to embodiments of the present disclosure, induction heating may thus be utilized to extend thermal energy deeply into the core of the material. The carrier (e.g., a frame portion of the carrier) may be heated through and through, which may result in slower cooling.

[0054] According to yet another embodiment, which may be combined with other embodiments described herein, a portion of the carrier (e.g., a frame portion or a shield provided at the carrier) may include a material having a relatively low electrical conductivity. The heat loss may be increased to make the carrier easier to heat. For example, the carrier portion may include or consist essentially of a material having an electrical conductivity of 10*10 6 AV -1 m -1 or less. For example, a portion of the carrier may be made of titanium. Thus, a mixture of an aluminum portion and a titanium portion may be provided. According to yet another embodiment, which may be combined with other embodiments described herein, a carrier having a frame portion may include a shield that shields the frame portion, where the shield includes or consists of titanium.

[0055] For example, the susceptor may have an aluminum frame portion and a titanium shield for shielding the frame portion. Thus, the shield that is exposed to the coating and mainly exposed to molecules (such as water molecules) from atmospheric conditions may be more easily heated due to its lower conductivity. According to yet another embodiment that may be combined with other embodiments described herein, a material composition of aluminum and another material (such as titanium) having a conductivity lower than that of aluminum may be provided.

[0056] According to an embodiment of the present disclosure, a susceptor for supporting a substrate during substrate processing is provided. The susceptor includes: a frame configured to support the substrate in a substrate processing area, the frame having a first material, such as aluminum, the first material having a first conductivity; and a shield for the frame, the shield having a second material, such as titanium, the second material having a second conductivity lower than the first conductivity.

[0057] Figure 3A The coil 340 is shown. Figure 3B A plurality of coils 340 are shown. Figure 3C A coil 340 is shown. As described above, the heating power may be lower than the electrical power provided by one or more power supplies 344. Power losses may occur in inductors (such as coils). Thus, one or more of the following details, features, and aspects may be provided for embodiments of the present disclosure. For example, the coil may include copper or another material having a high conductivity, particularly 50*10 6 AV -1 m -1 or higher, or may be composed of copper or another material having a high conductivity, particularly 50*10 6 AV -1 m -1 or higher. The wiring of the inductor, i.e., one or more coils, may be provided by a hollow tube. The hollow tube allows a cooling fluid, such as water, to be provided in the wiring. Thus, the power losses inside the coil may be cooled, for example, using an integrated water cooling circuit. Additionally or alternatively, cooling with a cooling fluid (such as water) may be provided between the wires or windings of one or more coils. Further, a portion of one or more coils may be provided by a stranded cable to reduce power losses. For example, a combination of hollow wiring and a stranded cable may be provided. According to some embodiments that may be combined with other embodiments described herein, as Figure 3C exemplarily shown in, the coil 340 may be closed, for example, to completely surround an edge portion of the susceptor. The uniformity of heating may be further improved.

[0058] According to yet another embodiment that can be combined with other embodiments described herein, and as described above, a flat coil can be provided. The flat coil provides at least partially a winding or wiring (or a single winding of the wiring) in a plane. The flat coil can be arranged parallel to a surface (such as a frame surface) and in particular close to the carrier surface. Thus, the gap between the coil and the material to be heated can be small.

[0059] According to yet another embodiment, one or more coils extend over most or substantially the entire surface of the carrier surface to be heated (such as the frame of the carrier). According to the exemplary embodiment described with respect to Figure 3A The coil can be wound to correspond to a frame-shaped carrier or can be wound to correspond to at least a part of the frame. For example, Figure 3A A substantially frame-shaped coil is shown. Alternatively, two L-shaped coils can be provided. As Figure 3B shown, and according to yet another embodiment that can be combined with other embodiments described herein, two or more coils can be provided, such as four coils 340. For example, each of the four coils can be arranged at one side of the frame of the carrier 212.

[0060] According to some embodiments that can be combined with other embodiments described herein, embodiments having two or more coils can have a separate power supply 344 and / or a separate matching circuit 342 for each of the coils. According to a further modification, coils having a similar geometry can share a power supply and a matching circuit. For example, for Figure 3B the embodiment exemplarily shown in, the left coil 340 and the right coil 340 can have a common power supply and a common matching circuit. Additionally, the upper coil 340 and the lower coil 340 can have a common power supply and a common matching circuit.

[0061] Advantageously, heating of the carrier supports the release of particles from the carrier and / or avoids the absorption of particles or molecules on the carrier. Thus, impurities can be removed from the carrier and / or contamination of the carrier can be avoided. The carrier can be transported between different pressure conditions. One or more carriers of the system can stop in different modules and thus under different pressure conditions. During the stay under atmospheric pressure conditions, particles can be absorbed onto the carrier. These particles are transported to a subsequent module having different pressure conditions. The subsequent transport interferes with the ongoing process, and thus, before the ongoing process can continue, the ongoing process must settle. Therefore, it is advantageous to remove particles from the carrier to accelerate the settlement of the process.

[0062] Figure 4 A top view of a substrate processing system 100 according to an embodiment described herein is shown. Embodiments of the present disclosure that provide inductive heating for the carrier can operate under atmospheric conditions as well as under vacuum conditions.

[0063] According to the embodiments described herein, the substrate processing system 100 may include an atmospheric module 170 (including a swing module 172 and an induction heating module 474), a load lock module 174, one or more transfer modules 180, and one or more processing modules 190. For example, one swing module 172 may be connected to the load lock module 174, which may be further connected to a pre-vacuum chamber 182. The pre-vacuum chamber may be connected to a high-vacuum chamber 184. The high-vacuum chamber may be connected to a processing chamber. The processing chamber may be connected to additional processing chambers. Generally, the number of process chambers that may be subsequently arranged may vary between one chamber and eight processing chambers, particularly between one processing chamber and five processing chambers, and more particularly between one processing chamber and three processing chambers. The substrate processing system 100 may further include a transport arrangement 160.

[0064] According to the embodiments described herein, the heating arrangement 240 may be arranged at different locations of the substrate processing system 100. For example, the heating arrangement 240 may be arranged at the atmospheric module 170. For example, the heating arrangement may be located at the swing module 172. Additionally, as Figure 4 shown in the processing system 100 of, the heating module 474 may be provided between the swing module 172 and the load lock module. According to some embodiments that may be combined with other embodiments described herein, the heating module 474 including the equipment for the heat treatment of the carrier may be provided under atmospheric conditions.

[0065] Additionally or alternatively, according to the embodiments described herein, the equipment 200 for heat treatment may be provided at one or more transfer modules 180. The equipment 200 for heat treatment may be arranged in one or more transfer modules 180. The equipment 200 for heat treatment or one or more heating arrangements 240 may be located in the pre-vacuum module or chamber. The heating in the pre-vacuum chamber may be performed statically. Static heating should be understood as a heating arrangement that is stationary, for example, stationary at the chamber wall. Static heating may also be understood as a fixed heating arrangement attached to the wall of the chamber. Stationary heating may include the carrier stopping inside the chamber.

[0066] Advantageously, particles can be removed at the start of substrate processing. Additionally, since heating is performed after the carrier exits the vacuum condition, absorption can be avoided. Thus, particle dispersion into subsequent chambers is more effectively prevented. Additionally, outgassing of the carrier is promoted. Thus, improved process stability and performance can be achieved. According to some embodiments, the method for heat treatment of the carrier can be used to maintain the surface temperature of the carrier to avoid water absorption during contact with the atmosphere. Thus, the carrier can be heated after unloading from the load lock chamber. Heating the carrier to a sufficiently high temperature and / or to a sufficient material depth can result in the carrier temperature being high enough during the operation of the swing module and the loading of subsequent substrates to avoid water absorption. However, inductive heating of the carrier can also be used to release the collected molecules, such as water molecules. In view of the above, process stability can be provided for a substrate processing process (e.g., a deposition process).

[0067] According to the embodiments described herein, depletion of residual particles or gases can be monitored by residual gas analysis (RGA) measurements. Monitoring and regulation of temperature can be performed by a control system. For example, the control system can be a closed-loop system. The measurements can be made in one or more transfer modules 180 and / or one or more processing modules 190. For example, RGA can be performed in a pre-vacuum chamber and a processing chamber. RGA can be related to heating regulation. According to an embodiment, a closed-loop system for heating the carrier can be established. For example, the regulation of the apparatus 200 for heat treatment can be related to the results of RGA. For example, if a high particle amount or a high residual gas amount is measured, the temperature of the apparatus for heat treatment can be increased.

[0068] According to the embodiments described herein, the apparatus 200 for heat treatment can be disposed at a portion of the wall of a module or a chamber. The module or chamber can include a top wall, four side walls, and / or a bottom wall. The apparatus for heat treatment can be arranged at each wall of one or more transfer chambers and / or one or more atmospheric modules. The apparatus 200 for heat treatment can be disposed at least at a portion of the chamber wall. For example, the apparatus 200 for heat treatment can be arranged in the upper section, lower section, and / or side section of the corresponding wall. The apparatus 200 for heat treatment can further cover the entire corresponding wall.

[0069] According to the embodiments described herein, the transport arrangement 160 can be configured to transport the carrier 212 through the apparatus 200 for heat treatment. For example, the transfer path 162 can be configured to provide the carrier at a site in the module where heating from the apparatus for heat treatment can be applied to the carrier 212. For example, the carrier can stop opposite the heating arrangement 240.

[0070] According to embodiments described herein, heating may be provided to the carrier 212 during carrier movement. The carrier may be transported between modules or chambers. For example, the carrier is transported between two transfer modules. One of the transfer modules may be a pre-vacuum chamber, and the second transfer module may be a high-vacuum chamber. Heating may be provided to the carrier during transfer of the carrier. The heating may be provided to the carrier frame as pulsed heating, i.e., the heating is then turned on and off. For example, the heating may be turned on and off based on the position of the carrier and the substrate. For example, the substrate may be heated without heating the carrier by turning off the heating arrangement at a specified position of the carrier and / or the substrate, for example.

[0071] According to embodiments described herein, a first region of the substrate-carrier arrangement may be the substrate receiving region of the substrate-carrier arrangement. According to embodiments described herein, a second region of the substrate-carrier arrangement may be an edge portion of the carrier of the substrate-carrier arrangement. For example, a first apparatus 252 for heat treatment may provide heating to the substrate receiving region, and a second apparatus 254 for heat treatment may provide heating to the edge portion and / or the carrier frame.

[0072] Figure 5 A flowchart of a method according to embodiments described herein is shown. The method may be performed by using a substrate processing system 100 according to embodiments described herein.

[0073] According to embodiments that may be combined with any of the embodiments described herein, block 610 includes loading a substrate onto a carrier in the substrate receiving region. The carrier and the substrate may be a substrate-carrier arrangement. The carrier loaded with the substrate may be placed on a swing module. The swing module may be a swing module described according to embodiments herein. The substrate-carrier arrangement may be brought to a vertical position by the swing module.

[0074] According to embodiments that may be combined with any of the embodiments described herein, block 620 includes introducing the carrier into the substrate processing system. For example, the substrate-carrier arrangement is introduced into the substrate processing system. The carrier and / or the substrate-carrier arrangement may be introduced vertically. The carrier may be connected to a transport arrangement as described in embodiments herein. Thus, the carrier and / or the substrate-carrier arrangement may be transported through the substrate processing system. The substrate-carrier arrangement may be introduced into a load lock module or chamber as described herein.

[0075] According to an embodiment combinable with any of the embodiments described herein, block 630 includes, for example, induction heating of an area of a carrier with an apparatus for heat treatment. The area of the carrier different from the substrate receiving area may be the area of the carrier to be heated. As described in the embodiments herein, heating may be provided by a heating arrangement. The apparatus for heat treatment may include a heating arrangement as described herein. For example, heating may be provided for up to 20 seconds or longer and / or up to 50 seconds or shorter (such as up to about 40 seconds). A temperature of at least 80 °C may be provided for the carrier.

[0076] Advantageously, particle absorption or molecular absorption may be avoided and / or particles that may be absorbed onto the carrier in an atmospheric module may be removed from the carrier. For example, such absorption may occur increasingly during a stoppage of the processing system when the carrier is placed in the atmospheric module. Thus, outgassing of the carrier may be ensured. Additionally, the stability of the process is improved.

[0077] Although the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be envisioned without departing from the basic scope thereof, and the scope of the present disclosure is determined by the scope of the appended claims.

Claims

1. An apparatus (200) for heat treating a carrier (212) in a substrate processing system, the apparatus (200) comprising: a heating arrangement (240) configured to be near the carrier and configured to provide thermal energy to the carrier at one side of the carrier where deposition towards a substrate occurs, the substrate being supported by the carrier, the heating arrangement comprising: one or more coils, and wherein the carrier has a substrate receiving region (232) for supporting a substrate (230) and one or more edge portions (214) extending outside the substrate receiving region (232), wherein the heating arrangement is configured to provide thermal energy to the one or more edge portions (214), excluding the substrate receiving region (232).

2. The apparatus (200) according to claim 1, wherein the one or more edge portions (214) provide a frame (216) that at least partially surrounds the substrate receiving region (232).

3. The apparatus (200) according to claim 2, wherein the heating arrangement (240) is configured to provide thermal energy to the frame (216).

4. The apparatus according to claim 1, wherein the one or more coils are one or more flat coils.

5. The apparatus according to claim 1, further comprising: one or more power supplies, and one or more impedance matching circuits disposed between the one or more power supplies and the one or more coils.

6. The apparatus according to claim 5, wherein an impedance matching circuit in the one or more impedance matching circuits is disposed between a power supply in the one or more power supplies and at least one coil having a predetermined geometry in the one or more coils.

7. The apparatus according to claim 6, wherein a common impedance matching circuit is provided for coils having the same predetermined geometry in the one or more coils.

8. The apparatus according to any one of claims 5 to 6, further comprising: a controller configured to adjust the frequency of the one or more power supplies.

9. The apparatus (200) according to claim 1, wherein the heating arrangement (240) comprises: an energy source for providing energy to the heating arrangement (240).

10. The device (200) according to any one of claims 1 to 7 or 9, wherein the heating arrangement (240) provides at least 1 kW / m 2 of thermal energy.

11. A substrate processing system (100), comprising: a heating module (474) comprising the apparatus (200) for heat treatment according to any one of claims 1 to 7 and 9 and arranged at, near or inside the substrate processing system; and a transport arrangement (160) configured to transport the carrier (212) past the apparatus (200) for heat treatment.

12. The substrate processing system (100) according to claim 11, wherein the system further comprises one or more atmosphere modules (170), and the apparatus (200) for heat treatment is disposed at the one or more atmosphere modules (170).

13. A method for inductively heating a susceptor in a processing system, the method comprising: introducing the susceptor for carrying a substrate into a substrate processing system; and inductively heating the susceptor with a device for heat treatment as claimed in any one of claims 1 to 7 and 9.

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