Substrate processing method, substrate processing apparatus, and computer-readable recording medium

Abstract

The present disclosure provides a substrate processing method, a substrate processing apparatus, and a computer-readable recording medium, which can miniaturize a cleaning tank of a nozzle. An example of the substrate processing method includes: arranging a tip end portion of the nozzle after supplying a processing liquid to a surface of a substrate in a housing recess of a cleaning tank; after arranging the tip end portion in the housing recess, supplying a solvent into the housing recess through a supply flow path formed in the cleaning tank in a manner of reaching the housing recess; and after supplying the solvent, supplying a non-active gas into the housing recess through the supply flow path.

Description

Technical Field

[0001] This invention relates to a substrate processing method, a substrate processing apparatus, and a computer-readable recording medium. Background Technology

[0002] Patent Document 1 discloses a standby method for a nozzle, which includes: supplying a liquid medicine from the nozzle to the surface of a substrate; moving the nozzle into a tank having a solvent storage section and supplying vapor of a solvent generated from the solvent storage section to the front end of the nozzle; and filling the tank with an inactive gas.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2010-172877 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure describes a substrate processing method, a substrate processing apparatus, and a computer-readable recording medium that enable miniaturization of the cleaning tank of the nozzle.

[0008] Solution for solving the problem

[0009] An example of a substrate processing method includes the following steps: placing the front end of a nozzle after supplying a processing liquid to the surface of the substrate into a receiving recess of a cleaning tank; after placing the front end into the receiving recess, supplying solvent into the receiving recess through a supply flow path formed in the cleaning tank in such a way as to reach the receiving recess; and after supplying the solvent, supplying an inactive gas into the receiving recess through the supply flow path.

[0010] The effects of the invention

[0011] According to the substrate processing method, substrate processing apparatus and computer-readable recording medium disclosed herein, the cleaning tank of the nozzle can be miniaturized. Attached Figure Description

[0012] Figure 1 This is a perspective view showing an example of a substrate processing system.

[0013] Figure 2 It is a summary view Figure 1 A side view of the interior of the substrate processing system.

[0014] Figure 3 It is a summary view Figure 1 A top view of the interior of the substrate processing system.

[0015] Figure 4This is a side view that schematically shows an example of a liquid treatment unit.

[0016] Figure 5 This is a cross-sectional view that schematically shows an example of a cleaning section.

[0017] Figure 6 This is a block diagram illustrating an example of a substrate processing system.

[0018] Figure 7 This is a schematic diagram illustrating an example of the hardware structure of the controller.

[0019] Figure 8 This is a flowchart illustrating an example of the nozzle cleaning process.

[0020] Figure 9 It is a graph showing the test results.

[0021] Explanation of reference numerals in the attached figures

[0022] 1: Substrate processing system; 2: Coating and developing apparatus (substrate processing apparatus); 30: Liquid supply unit; 32: Drive mechanism (drive unit); 33: Nozzle; 33a: Front end; 40: Cleaning unit; 41: Cleaning tank; 41a: Receiving recess; 41b: Discharge unit (discharge flow path); 42: Metal component; 43: Supply mechanism (solvent supply unit); 44: Supply mechanism (gas supply unit); 45: Suction mechanism (suction unit); 46: Exhaust mechanism (exhaust unit); Ctr: Controller (control unit); F1~F3, F5: Supply flow path; F4: Exhaust flow path; F6: Discharge flow path; L: Processing liquid; RM: Recording medium; U1: Liquid processing unit; W: Substrate; Wa: Surface. Detailed Implementation

[0023] In the following description, the same reference numerals are used for the same elements or elements with the same function, and repeated descriptions are omitted.

[0024] [Substrate Processing System]

[0025] First, refer to Figures 1-3 The structure of substrate processing system 1 will be described below. Substrate processing system 1 includes coating and developing apparatus 2 (substrate processing apparatus), exposure apparatus 3, and controller Ctr (control unit).

[0026] Exposure apparatus 3 is configured to receive substrate W between itself and coating and developing apparatus 2, and to expose surface Wa (refer to) formed on substrate W. Figure 4 The resist film is exposed (pattern exposure). The exposure device 3 can also selectively irradiate the exposed portion of the resist film with energy rays by methods such as immersion exposure.

[0027] The coating and developing apparatus 2 is configured to form a resist film on the surface Wa of the substrate W before exposure processing by the exposure apparatus 3. The coating and developing apparatus 2 is configured to perform a developing process on the resist after exposure processing.

[0028] The substrate W can be circular or non-circular in shape, such as a polygon. The substrate W may also have a cut-out portion formed by removing a portion of it. This cut-out portion can be, for example, a groove (U-shaped, V-shaped, etc.) or a straight section extending in a straight line (a so-called orientation plane). The substrate W can also be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or various other substrates. The diameter of the substrate W can be, for example, approximately 200 mm to 450 mm.

[0029] like Figures 1-3 As shown, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, the processing block 5, and the interface block 6 can, for example, be arranged in a row along a horizontal direction.

[0030] The support block 4 has a support station 12 and a loading / unloading section 13. The support station 12 supports multiple support members 11 (containers) in a detachable manner. The support member 11 is configured to contain at least one substrate W in a sealed state (see reference). Figure 2 and Figure 3 The carrier 11 includes an opening and closing door 11a for removing and placing the substrate W.

[0031] The loading / unloading section 13 is located between the load-bearing station 12 and the processing block 5. For example... Figure 1 and Figure 3 As shown, the loading / unloading section 13 has multiple opening and closing doors 13a. When a carrier 11 is mounted on the carrier station 12, opening and closing doors 11a and 13a simultaneously connect the interior of the carrier 11 to the interior of the loading / unloading section 13. Figure 2 and Figure 3 As shown, the loading and unloading section 13 has a built-in conveying arm A1. The conveying arm A1 is configured to take the substrate W from the carrier 11 and transfer it to the processing block 5, collect the substrate W from the processing block 5 and send the substrate W back into the carrier 11.

[0032] like Figure 2 As shown, processing block 5 includes processing modules PM1 to PM3.

[0033] The processing module PM1 is configured to form a lower layer film on the surface of the substrate W. For example... Figure 3As shown, the processing module PM1 includes a liquid treatment unit U1 (processing chamber), a heat treatment unit U2 (processing chamber), and a transfer arm A2. The transfer arm A2 is configured to transfer the substrate W to the liquid treatment unit U1 (processing chamber) and the heat treatment unit U2 (processing chamber). The liquid treatment unit U1 of the processing module PM1 may, for example, be configured to coat the substrate W with a coating liquid for forming a lower layer film. The heat treatment unit U2 of the processing module PM1 may, for example, be configured to perform heat treatment to cure the coating film formed on the substrate W by the liquid treatment unit U1 to become a lower layer film. Examples of lower layer films include anti-reflective (SiARC) films, SOG (Spin On Glass) films, SOC (Spin On Carbon) films, and amorphous carbon films.

[0034] Processing module PM2 is configured to form a resist film on a substrate film. Processing module PM2 includes a liquid treatment unit U1, a heat treatment unit U2, and a transfer arm A3 configured to transfer substrate W to the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 of processing module PM2 may, for example, be configured to coat the substrate W with a coating liquid for forming the resist film. The heat treatment unit U2 of processing module PM2 may, for example, be configured to perform a heat treatment (PAB: Pre-Applied Bake) to cure the coating film formed on substrate W by the liquid treatment unit U1 into a resist film.

[0035] Processing module PM3 is configured to perform a developing process on the exposed resist film. Processing module PM3 includes a liquid treatment unit U1, a heat treatment unit U2, and a transfer arm A4, which is configured to transfer the substrate W to the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 of processing module PM3 may, for example, be configured to partially remove the resist film to form a resist pattern (not shown). The heat treatment unit U2 of processing module PM3 may, for example, be configured to perform a heat treatment before developing (PEB: Post Exposure Bake) or a heat treatment after developing (PB: Post Bake), etc.

[0036] like Figure 2 and Figure 3 As shown, the processing block 5 includes a frame unit 14 located near the support block 4 and a frame unit 15 located near the interface block 6. A transfer arm A6 is provided near the frame unit 14. The transfer arm A6 is configured to move the substrate W up and down between the layers of the frame unit 14.

[0037] Interface block 6 is disposed between processing block 5 and exposure apparatus 3, and a transfer arm A7 is built into interface block 6. Transfer arm A7 is configured to take out substrate W from frame unit 15 and transfer it to exposure apparatus 3, collect substrate W from exposure apparatus 3 and send substrate W back to frame unit 15.

[0038] The controller Ctr is configured to partially or entirely control the coating and developing apparatus 2. Details of the controller Ctr will be described later. The controller Ctr may also be configured to transmit and receive signals with the controller of the exposure apparatus 3, and to control the substrate processing system 1 as a whole by cooperating with the controller of the exposure apparatus 3.

[0039] [Liquid Treatment Unit]

[0040] Next, refer to Figure 4 and Figure 5 The liquid processing unit U1 will be described in further detail. The liquid processing unit U1 includes a substrate holding section 20, a liquid supply section 30, and a cleaning section 40.

[0041] The substrate holding portion 20 includes a rotating portion 21, a shaft 22, and a holding portion 23. The rotating portion 21 is configured to rotate the shaft 22 based on an action signal from a controller Ctr. The rotating portion 21 is, for example, a power source such as an electric motor. The holding portion 23 is provided at the front end of the shaft 22. The substrate W is disposed on the holding portion 23. The holding portion 23 is configured, for example, to hold the substrate W in a substantially horizontal position by adsorption or the like. That is, the substrate holding portion 20 rotates the substrate W about a central axis (rotation axis) perpendicular to the surface Wa of the substrate W in a substantially horizontal position.

[0042] The liquid supply unit 30 is configured to supply a processing liquid L to the surface Wa of the substrate W. The processing liquid L of the processing module PM1 may be, for example, a coating solution (chemical solution) for forming a lower film. The processing liquid L of the processing module PM2 may be, for example, a resist solution for forming a resist film. The processing liquid L of the processing module PM3 may be, for example, a developing solution.

[0043] The liquid supply unit 30 includes a supply mechanism 31, a drive mechanism 32 (drive unit), and a nozzle 33. The supply mechanism 31 is configured to deliver the processing liquid L stored in a container (not shown) to the nozzle 33 via a pump or other liquid delivery mechanism (not shown) based on a signal from a controller CTr. The drive mechanism 32 is configured to move the nozzle 33 in both the vertical and horizontal directions based on a signal from the controller CTr. The nozzle 33 is configured to spray the processing liquid L supplied from the supply mechanism 31 onto the surface Wa of the substrate W. The nozzle 33 is configured to be movable between the substrate W (above the substrate holding part 20) and the cleaning part 40 via the drive mechanism 32.

[0044] The cleaning unit 40 is configured to clean the front end 33a of the nozzle 33 after the processing liquid L is supplied to the surface Wa of the substrate W. For example... Figure 4 As shown, the cleaning section 40 is located away from the substrate holding section 20. (As shown in...) Figure 5 As shown in detail, the cleaning unit 40 includes a cleaning tank 41, a metal component 42, a supply mechanism 43 (solvent supply unit), a supply mechanism 44 (gas supply unit), a suction mechanism 45 (suction unit), and an exhaust mechanism 46 (exhaust unit).

[0045] The cleaning tank 41 is made of a fluoropolymer such as polytetrafluoroethylene and includes a receiving recess 41a for accommodating the front end 33a of the nozzle 33. The receiving recess 41a extends vertically and has an opening at the top. Viewed from above, the size of the receiving recess 41a is slightly larger than that of the nozzle 33. Therefore, when the nozzle 33 is located within the receiving recess 41a, the nozzle 33 functions as a cover for the receiving recess 41a. The bottom wall of the receiving recess 41a is connected to a discharge portion 41b for draining liquid.

[0046] The cleaning tank 41 includes supply flow paths F1 to F3 connected to the receiving recess 41a by means of fluid, and an exhaust flow path F4. Supply flow path F1 extends horizontally. One end of supply flow path F1 has an opening in the middle portion of the receiving recess 41a in the vertical direction. Supply flow path F2 extends continuously in the horizontal direction along with supply flow path F1. Therefore, one end of supply flow path F2 is connected to the other end of supply flow path F1. The other end of supply flow path F2 has an opening on the side of the cleaning tank 41.

[0047] The supply flow path F3 extends vertically. One end of the supply flow path F3 merges with the connection portion of the supply flow paths F1 and F2. That is, it can also be said that the supply flow path F3 is a branch flow path that branches off from the integrally extended supply flow paths F1 and F2. The other end of the supply flow path F3 has an opening on the upper surface of the cleaning tank 41.

[0048] The exhaust flow path F4 is located lower than the supply flow paths F1 to F3, and extends horizontally. One end of the exhaust flow path F4 has an opening at the lower end of the receiving recess 41a. That is, the opening of the exhaust flow path F4 in the receiving recess 41a is located lower than the opening of the supply flow path F1 in the receiving recess 41a. The other end of the exhaust flow path F4 has an opening on the side of the cleaning tank 41.

[0049] Metal member 42, for example, a plate-shaped member made of stainless steel, is disposed on the upper surface of the cleaning tank 41 such that it covers the area around the opening of the receiving recess 41a. Metal member 42 includes a through hole of approximately the same size as the opening of the receiving recess 41a. This through hole communicates with the opening of the receiving recess 41a. Metal member 42 is grounded via a wire to remove static electricity generated near the opening of the receiving recess 41a. Metal member 42 may also be disposed in other areas of the cleaning tank 41 where static electricity is easily generated. Metal member 42 may be disposed on the upper surface of the cleaning tank 41, for example, covering the area around the opening at the other end of the supply flow path F3, or it may be disposed inside the cleaning tank 41 to cover the area where supply flow paths F1, F2 and supply flow path F3 converge.

[0050] The supply mechanism 43 is configured to supply solvent stored in the container (not shown) into the receiving recess 41a through supply flow paths F1 and F2 via a liquid delivery mechanism (not shown) using a pump or similar liquid delivery mechanism based on a signal from the controller Ctr. The solvent may be, for example, dibutyl ether.

[0051] The supply mechanism 44 is configured to supply an inert gas stored in a container (not shown) into the receiving recess 41a via supply flow paths F1 and F3, using a gas delivery mechanism (not shown) such as a pump and supply flow path F5, based on a signal from the controller Ctr. This inert gas may be, for example, nitrogen or a rare gas. Supply flow path F5 and supply flow path F3 are fluidly connected.

[0052] The suction mechanism 45 is configured such that, based on a signal from the controller Ctr, a fluid delivery unit (not shown) such as a pump circulates the working fluid stored in the container (not shown) through the discharge flow path F6. This working fluid can be, for example, an inert gas (nitrogen, rare gas, etc.) or a liquid. If the working fluid is a liquid, the discharge flow path F6 can be positioned lower than the supply flow paths F1 and F3 to prevent the working fluid from mixing into the supply flow paths F1 and F3.

[0053] The discharge path F6 intersects the supply path F5 in a manner that connects to it. The working fluid can be the same inert gas as the inert gas flowing in the supply path F5. In this case, the inert gas as the working fluid can also be supplied from the inert gas supply source (container) of the supply mechanism 44 to the discharge path F6. The middle section of the discharge path F6 is fluidly connected to the supply paths F1 and F3 via the supply path F5, so that if there is residual solvent in the supply path F1, the residual solvent is discharged to the outside through the supply paths F1, F3 and the discharge path F6.

[0054] Valves V1 and V2 are provided on the supply flow path F5. Valve V1 is located between the supply mechanism 44 and the discharge flow path F6. Valve V2 is located between the discharge flow path F6 and the supply flow path F3. Valve V3 is provided on the discharge flow path F6. Valve V3 is located between the suction mechanism 45 and the supply flow path F5. Valves V1 to V3 are configured to open and close based on signals from the controller Ctr.

[0055] The exhaust mechanism 46 is configured to exhaust air into the receiving recess 41a through the exhaust flow path F4 based on a signal from the controller Ctr. The exhaust mechanism 46 may be, for example, a pump.

[0056] [Controller Details]

[0057] like Figure 6 As shown, the controller Ctr has a read unit M1, a storage unit M2, a processing unit M3, and an indicator unit M4 as functional modules. These functional modules are merely for convenience in dividing the controller Ctr's functions into multiple modules, and do not imply that the hardware constituting the controller Ctr is divided into such modules. Each functional module is not limited to being implemented by executing a program, but can also be implemented by dedicated circuits (e.g., logic circuits) or integrated circuits (ASICs) that integrate such dedicated circuits.

[0058] The reading unit M1 is configured to read programs from a computer-readable recording medium RM. The recording medium RM records programs for operating the various parts of the coating and developing apparatus 2. The recording medium RM can be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or an optical-magnetic recording disk.

[0059] The storage unit M2 is configured to store various types of data. For example, the storage unit M2 can store programs read from the recording medium RM by the reading unit M1, and setting data input by the operator via an external input device (not shown). This program can be configured to operate various parts of the coating and developing apparatus 2. The recording medium RM can be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or an optical-magnetic recording disk.

[0060] The processing unit M3 is configured to process various types of data. For example, the processing unit M3 can generate signals for operating the liquid treatment unit U1, heat treatment unit U2, etc., based on various types of data stored in the storage unit M2.

[0061] The instruction unit M4 is configured to send operation signals generated by the processing unit M3 to various devices.

[0062] The hardware of the controller Ctr can, for example, consist of one or more control computers. Figure 7As shown, the controller Ctr includes a circuit C1 as a hardware structure. Circuit C1 can be composed of circuit elements. Circuit C1 may also include a processor C2, a memory C3, a storage device C4, a driver C5, and input / output ports C6.

[0063] The processor C2, in cooperation with at least one of the memory C3 and storage device C4, executes the program and performs signal input and output via the input / output port C6, thereby constituting the aforementioned functional modules. The memory C3 and storage device C4 function as the storage unit M2. The driver C5 is a circuit that drives various devices of the coating and developing apparatus 2. The input / output port C6 performs signal input and output between the driver C5 and various devices of the coating and developing apparatus 2 (e.g., liquid treatment unit U1, heat treatment unit U2, etc.).

[0064] The substrate processing system 1 may have a single controller Ctr or a controller group (control unit) consisting of multiple controller Ctrs. When the substrate processing system 1 has a controller group, the aforementioned functional modules may be implemented by a single controller Ctr or by a combination of two or more controller Ctrs. When the controller Ctr is composed of multiple computers (circuits C1), the aforementioned functional modules may be implemented by a single computer (circuit C1) or by a combination of two or more computers (circuits C1). The controller Ctr may also have multiple processors C2. In this case, the aforementioned functional modules may be implemented by a single processor C2 or by a combination of two or more processors C2.

[0065] Alternatively, a portion of the functions of the controller Ctr of the substrate processing system 1 can be located in a separate device from the substrate processing system 1, and various operations in this embodiment can be implemented by connecting to the substrate processing system 1 via a network. For example, if the functions of the processors C2, memory C3, and storage devices C4 of multiple substrate processing systems 1 are concentrated and implemented by one or more other devices, it is also possible to remotely and uniformly manage and control the information and operations of multiple substrate processing systems 1.

[0066] [Nozzle Cleaning Method]

[0067] Next, refer to Figure 5 and Figure 8 The method for cleaning the front end 33a of the cleaning nozzle 33 will be explained. In addition, in the initial state, valves V1 to V3 are all closed.

[0068] First, the controller Ctr instructs the drive mechanism 32 to move the nozzle 33, which is waiting in the receiving recess 41a of the cleaning tank 41, above the substrate W held by the substrate holding part 20 (see reference). Figure 8 Step S11).

[0069] Next, the controller Ctr instructs the supply mechanism 31 to supply the processing liquid L to the surface Wa of the substrate W (see reference). Figure 8 (Step S12). After this, the substrate W is transferred to the heat treatment unit U2 and heated.

[0070] Next, the controller Ctr instructs the drive mechanism 32 to move the nozzle 33 into the cleaning tank 41, so that the front end 33a of the nozzle 33 is located within the receiving recess 41a (see reference). Figure 8 Step S13). In this state, the controller Ctr instructs the supply mechanism 43 to supply solvent into the receiving recess 41a through the supply flow paths F1 and F2 (see step S13). Figure 8 (Step S14). After the supplied solvent cleans the front end 33a of the nozzle 33, a portion of the solvent is discharged from the discharge section 41b. Sometimes, another portion of the supplied solvent adheres to and remains in the supply flow path F1. The supply time for supplying solvent to the receiving recess 41a can be, for example, about 2 to 3 seconds, or about 5 seconds.

[0071] Next, controller Ctr instructs valves V2 and V3 to open them. Additionally, controller Ctr instructs suction mechanism 45 to allow working fluid to flow through discharge path F6. When the working fluid flows through discharge path F6, the pressure in discharge path F6 decreases relatively due to the Venturi effect. Therefore, if solvent remains in supply path F1, this residual solvent is discharged to the outside through supply paths F1 and F3 and discharge path F6 (see reference). Figure 8 Step S15).

[0072] Next, controller Ctr instructs valves V1 and V3 to close valve V3 and open valve V1. Additionally, controller Ctr instructs supply mechanism 44 to supply inactive gas into receiving recess 41a via supply paths F1, F3, and F5 (see reference). Figure 8 (Step S16). Furthermore, approximately simultaneously with the supply of inactive gas into the receiving recess 41a, the controller Ctr instructs the venting mechanism 46 to vent gas into the receiving recess 41a through the venting flow path F4 (see the same step).

[0073] Alternatively, after a predetermined time has elapsed since the nozzle 33's tip 33a was positioned within the receiving recess 41a, the supply mechanism 44 begins supplying the inert gas to the receiving recess 41a. In this case, a leeway is allocated before supplying the inert gas to the nozzle 33's tip 33a to draw solvent from the supply flow path. Thus, during the allocated time, solvent remaining in the receiving recess 41a is also drawn in through the supply flow paths F1 and F2. Therefore, there is a tendency for less solvent to remain in the receiving recess 41a when the inert gas is supplied. Consequently, the generation of mist originating from this retained solvent is suppressed. Furthermore, in this case, a leeway is allocated before supplying the inert gas to the receiving recess 41a to draw in residual solvent through the supply flow paths F1 and F3 and the discharge flow path F6. The aforementioned predetermined time can be, for example, approximately 2 to 3 seconds or approximately 5 seconds.

[0074] The exhaust flow rate discharged from the receiving recess 41a via the exhaust mechanism 46 can also be set to be higher than the supply flow rate of the inactive gas supplied to the receiving recess 41a via the supply mechanism 44. In this case, even after passing through... Figure 8 If solvent remains in the supply flow path F1 after step S15, this residual solvent tends to flow towards the discharge flow path F6. Therefore, the mist originating from this residual solvent is unlikely to diffuse to the outside of the receiving recess 41a. The supply flow rate of the inactive gas to the receiving recess 41a can be set to approximately 1 liter / min to 5 liters / min.

[0075] The exhaust flow rate discharged from the receiving recess 41a through the exhaust mechanism 46 is greater than or equal to the supply flow rate of the inactive gas supplied to the receiving recess 41a, for example, it can be set to about 1 liter / min to 5 liters / min. When the exhaust flow rate is 1 liter / min or more, there is a tendency for mist from the residual solvent to have difficulty diffusing to the outside of the receiving recess 41a. When the exhaust flow rate is 5 liters / min or less, there is a tendency for external air to have difficulty entering the receiving recess 41a from the opening of the receiving recess 41a because exhaust is carried out through the exhaust flow path F4.

[0076] Through the above steps, the cleaning of the front end 33a of the nozzle 33 is completed. This state is maintained before the nozzle 33 begins to supply the processing liquid L to the subsequent substrate W.

[0077] [effect]

[0078] Furthermore, a waiting time occurs between the supply of processing liquid L from nozzle 33 to substrate W and the subsequent supply of processing liquid L from nozzle 33 to subsequent substrates W. During this period, the processing liquid L present in the tip 33a of nozzle 33 may sometimes react with oxygen and moisture in the air, resulting in deterioration or solidification. This tendency is particularly evident when polysilazane is used as the processing liquid L during SOG film formation. A virtual dispensing method is known in which the processing liquid L is not supplied to substrate W during the waiting period and is discarded to the liquid receiving section to suppress the deterioration and solidification of the processing liquid L. However, in this method, the more expensive processing liquid L is discarded, thus increasing manufacturing costs.

[0079] However, according to the example above, during the aforementioned waiting period, the front end 33a of the nozzle 33 is disposed within a receiving recess 41a filled with inactive gas. Therefore, the area around the front end 33a is isolated from oxygen and moisture, thus suppressing the reaction of the processing liquid L present within the front end 33a of the nozzle 33 even without virtual dispensing. Consequently, waste processing liquid L is no longer needed, thereby reducing manufacturing costs.

[0080] Based on the above example, solvent for cleaning the tip 33a of the nozzle 33 and inert gas for suppressing the reaction of the treatment liquid L within the nozzle 33 are supplied to the receiving recess 41a through the same supply flow path F1. Therefore, compared to the case where the flow paths of the solvent and the inert gas are formed independently in the cleaning tank, fewer flow paths are formed in the cleaning tank 41. Consequently, the cleaning tank 41 can be miniaturized.

[0081] Furthermore, when an inactive gas is supplied to the receiving recess 41a through the same supply flow path F1 while residual solvent is present, even if the front end 33a disposed within the receiving recess 41a functions as a cover for the receiving recess 41a, the solvent may sometimes become mist due to the flow potential of the inactive gas and be blown out of the receiving recess 41a through the gap between the front end 33a and the receiving recess 41a. When such mist floats in the atmosphere gas of the liquid treatment unit U1 and adheres to the surface Wa of the substrate W, defects may occur in the treated substrate W. However, according to the above example, before supplying the receiving recess 41a with inactive gas, the solvent remaining in the supply flow path F1 is discharged to the outside through the supply flow paths F1, F3, and the discharge flow path F6. Therefore, it is possible to suppress the situation where residual solvent becomes mist along with the supply of inactive gas to the supply flow path F1 and the mist diffuses to the outside of the receiving recess 41a. Therefore, it is possible to suppress the adhesion of the mist to the substrate W, thereby improving the processing quality of the substrate W.

[0082] Based on the above example, the working fluid is circulated in the discharge flow path F6, and the Venturi effect is used to depressurize the discharge flow path F6, thereby attracting and discharging the residual solvent in the supply flow path F1. Therefore, the Venturi effect can be used to easily discharge residual solvent from the supply flow path F1 with a simple structure.

[0083] Based on the above example, during the supply of inactive gas to the receiving recess 41a, venting is performed on the receiving recess 41a through the venting path F4. Therefore, residual solvent is forcibly discharged through the venting path F4. Consequently, the diffusion of mist to the outside of the receiving recess 41a can be further suppressed.

[0084] Based on the above examples, the process of supplying the inactive gas and the process of venting from the receiving recess 41a are performed at approximately the same timing. Therefore, within the receiving recess 41a, airflow from the supply flow path F1 to the exhaust flow path F4 is more easily generated than airflow from the supply flow path F1 toward the opening of the receiving recess 41a. Therefore, residual solvent is easily discharged through the exhaust flow path F4. Therefore, it is possible to further suppress the diffusion of mist originating from residual solvent to the outside of the receiving recess 41a.

[0085] Based on the above example, the opening of the exhaust flow path F4 in the receiving recess 41a is positioned lower than the opening of the supply flow path F1 in the receiving recess 41a. Therefore, the airflow generated within the receiving recess 41a flows from the supply flow path F1 to the exhaust flow path F4, which is located on the side opposite to the opening of the receiving recess 41a. Consequently, residual solvent is less likely to reach the opening of the receiving recess 41a. As a result, the diffusion of mist originating from residual solvent to the outside of the receiving recess 41a can be further suppressed.

[0086] Based on the above example, the metal component 42 covers the vicinity of the opening of the receiving recess 41a, the vicinity of the area where supply flow paths F1, F2 and F3 merge, etc. In this case, even if static electricity is generated in the cleaning tank 41, it can be removed by the metal component 42. Therefore, it is possible to prevent the solvent and the treatment liquid L in the front end 33a of the nozzle 33 from being attracted by static electricity and adhering to unexpected parts.

[0087] [Variation Example]

[0088] The disclosures in this specification should be considered illustrative in all respects, not restrictive. Various omissions, substitutions, and modifications may be made to the above examples without departing from the scope and spirit of the patent claims.

[0089] (1) In the above example, the Venturi effect is used to draw and discharge the residual solvent from the supply flow path F1, but other methods can also be used to draw the residual solvent from the supply flow path F1. For example, a pump or the like connected to the supply flow path F1 by means of fluid can be used to force the pressure of the supply flow path F1. Alternatively, the residual solvent may not be drawn from the supply flow path F1.

[0090] (2) The inactive gas can be supplied to the receiving recess 41a before the front end 33a of the nozzle 33 is placed in the receiving recess 41a, or the inactive gas can be supplied to the receiving recess 41a approximately at the same time as the front end 33a of the nozzle 33 is placed in the receiving recess 41a.

[0091] (3) Alternatively, the opening of the supply flow path F1 in the receiving recess 41a can be located at a lower position than the opening of the exhaust flow path F4 in the receiving recess 41a.

[0092] (4) The process of supplying inactive gas and the process of venting gas from the receiving recess 41a may not be performed at approximately the same time. Alternatively, venting gas from the receiving recess 41a may not be performed via the venting mechanism 46.

[0093] (5) The cleaning section 40 may also exclude the metal component 42.

[0094] (6) Alternatively, the supply flow rate of the inactive gas supplied to the receiving recess 41a can be set to be greater than the exhaust flow rate discharged from the receiving recess 41a.

[0095] (7) The discharge flow path F6 may not be connected to the supply flow path F5. In this case, the flow path branching off from the middle part of the discharge flow path F6 may be connected to the supply flow path F3.

[0096] (8) When the liquid supply unit 30 includes a plurality of nozzles 33, a plurality of receiving recesses 41a corresponding to the plurality of nozzles 33 may also be provided in a cleaning tank 41.

[0097] [test]

[0098] Here, it is confirmed that in accordance with Figure 8In steps S11 to S16, the degree of diffusion of mist towards the outer side of the receiving recess 41a during the cleaning treatment of the front end 33a of the nozzle 33 is measured. In step S16, 5 seconds after the front end 33a of the nozzle 33 is placed in the receiving recess 41a, the supply of inactive gas to the receiving recess 41a via the supply mechanism 44 is started. Other test conditions are set as follows: the number of particles larger than 0.1 μm in the atmosphere gas of the liquid treatment unit U1 after step S16 is measured using a gas particle counter (LIGHTHOUSE "SOLAIR 1100+"). Furthermore, the supply flow rate of the inactive gas supplied to the receiving recess 41a via the supply mechanism 44 will be referred to as "supply flow rate" and the exhaust flow rate of the gas exhausted from the receiving recess 41a via the exhaust mechanism 46 will be referred to as "exhaust flow rate".

[0099] Experiment 1

[0100] Supply flow rate: 1 liter / min

[0101] Exhaust flow rate: 0 liters / min

[0102] Experiment 2

[0103] Supply flow rate: 1 liter / min

[0104] Exhaust flow rate: 1 liter / min

[0105] Experiment 3

[0106] Supply flow rate: 1 liter / min

[0107] Exhaust flow rate: 5 liters / min

[0108] Experiment 4

[0109] Supply flow rate: 5 liters / min

[0110] Exhaust flow rate: 0 liters / min

[0111] Experiment 5

[0112] Supply flow rate: 5 liters / min

[0113] Exhaust flow rate: 1 liter / min

[0114] Experiment 6

[0115] Supply flow rate: 5 liters / min

[0116] Exhaust flow rate: 5 liters / min

[0117] exist Figure 9 The results of experiments 1-6 are shown in the figure. Figure 9In the diagram, the vertical axis represents the relative particle count when the supply flow rate of the inactive gas is 1 L / min and the exhaust flow rate is 0 L / min, set to 10. For example... Figure 9 As shown, with both the inert gas supply flow rate of 1 L / min and the inert gas supply flow rate of 5 L / min, it was confirmed that the number of particles decreased with increasing exhaust flow rate. Furthermore, when the exhaust flow rate was higher than the inert gas supply flow rate, i.e., in experiments 2, 3, and 6, the decrease in the number of particles was particularly confirmed.

[0118] [Other examples]

[0119] Example 1. An example of a substrate processing method includes the following steps: placing the tip of a nozzle, after which a processing liquid is supplied to the surface of the substrate, into a receiving recess of a cleaning tank; after placing the tip, supplying solvent into the receiving recess through a supply flow path formed in the cleaning tank to reach the receiving recess; and after supplying the solvent, supplying an inactive gas into the receiving recess through the supply flow path. In this case, the solvent for cleaning the tip of the nozzle and the inactive gas for suppressing the reaction of the processing liquid in the nozzle are supplied into the receiving recess through the same supply flow path. Therefore, compared to the case where the flow path of the solvent and the flow path of the inactive gas are formed independently in the cleaning tank, the number of flow paths formed in the cleaning tank is reduced. Consequently, the cleaning tank can be miniaturized.

[0120] Example 2. In the method of Example 1, a step of drawing solvent from the supply flow path may also be included after the solvent is supplied and before the inactive gas is supplied. In this case, even if solvent remains in the supply flow path, the residual solvent can be removed from the supply flow path before the inactive gas is supplied. Therefore, it is possible to suppress the situation where residual solvent becomes mist along with the supply of inactive gas to the supply flow path and the mist diffuses to the outside of the receiving recess. Thus, it is possible to suppress the mist from adhering to the substrate, thereby improving the processing quality of the substrate.

[0121] Example 3. In the method of Example 2, the process of attracting solvent may also include: allowing the working fluid to circulate in a discharge path that is fluidly connected to the supply path in the intermediate section, thereby depressurizing the discharge path and attracting and discharging the solvent from the supply path through the discharge path. In this case, the Venturi effect can be used to easily discharge residual solvent from the supply path with a simple structure.

[0122] Example 4. In the method of Example 2 or Example 3, the step of supplying the inactive gas may also include: supplying the inactive gas into the receiving recess after a predetermined time has elapsed since the front end was placed in the receiving recess. In this case, a slack time for drawing solvent from the supply flow path is allocated before supplying the inactive gas to the front end of the nozzle. Thus, during the allocated time, the solvent retained in the receiving recess is also drawn in through the supply flow path. Therefore, the amount of solvent retained in the receiving recess is reduced when the inactive gas is supplied. Consequently, the generation of mist originating from the retained solvent can be further suppressed.

[0123] Example 5. Any of the methods in Examples 1 to 4 may further include the following step: during the supply of inactive gas to the receiving recess, venting is performed from the receiving recess through an venting flow path fluidly connected to the receiving recess. In this case, residual solvent is forcibly discharged through the venting flow path. Therefore, it is possible to further suppress the diffusion of mist to the outside of the receiving recess.

[0124] Example 6. In the method of Example 5, the steps of supplying the inactive gas and venting from the receiving recess can also be performed at approximately the same timing. In this case, within the receiving recess, airflow from the supply path to the venting path is more likely to be generated than airflow from the supply path towards the opening of the receiving recess, thus facilitating the discharge of residual solvent through the venting path. Therefore, it is possible to further suppress the diffusion of mist originating from residual solvent to the outside of the receiving recess.

[0125] Example 7. In the method of Example 5 or Example 6, the opening of the exhaust flow path in the receiving recess may be located lower than the opening of the supply flow path in the receiving recess. In this case, the airflow generated in the receiving recess flows from the supply flow path toward the exhaust flow path located on the side opposite to the opening of the receiving recess. Therefore, residual solvent is less likely to reach the opening of the receiving recess. Consequently, it is possible to further suppress the diffusion of mist originating from residual solvent to the outside of the receiving recess.

[0126] Example 8. In any of the methods in Examples 5 to 7, the exhaust flow rate from the receiving recess can be set to be higher than or equal to the supply flow rate of the inactive gas supplied to the receiving recess. In this case, residual solvent tends to flow into the exhaust path. Therefore, it is possible to further suppress the diffusion of mist originating from residual solvent to the outside of the receiving recess.

[0127] Example 9. In the method of Example 8, the exhaust flow rate from the receiving recess may also be 1 liter / min to 5 liters / min. In this case, it is possible to suppress the diffusion of mist originating from the residual solvent to the outside, and to prevent external air from entering the receiving recess from the opening of the receiving recess due to exhaust through the exhaust flow path.

[0128] Example 10. In any of the methods in Examples 1 to 9, a metal component can also be used to cover the vicinity of the opening of the receiving recess, or to cover the vicinity of the area where the solvent and inactive gas merge in the supply flow path. In this case, even if static electricity is generated in the cleaning tank, it can be removed by the metal component. Therefore, it is possible to prevent the solvent and the treatment liquid in the nozzle from being attracted by static electricity and adhering to unexpected locations.

[0129] Example 11. An example of a substrate processing apparatus includes: a nozzle configured to supply a processing liquid to the surface of a substrate; a cleaning tank having a receiving recess capable of receiving the front end of the nozzle and a supply flow path extending to reach the receiving recess; a drive unit configured to move the nozzle between the substrate and the cleaning tank; a solvent supply unit configured to supply solvent into the receiving recess via the supply flow path; and a gas supply unit configured to supply an inactive gas into the receiving recess via the supply flow path. In this case, the same effect as the method in Example 1 can be obtained.

[0130] Example 12. The apparatus of Example 11 may also include a suction unit configured to attract solvent remaining in the supply flow path. In this case, the same effect as the method of Example 2 can be obtained.

[0131] Example 13. In the apparatus of Example 12, the suction unit may also include: a discharge flow path, the middle portion of which is fluidly connected to the supply flow path; and a fluid supply unit configured to allow working fluid to circulate in the discharge flow path to reduce pressure within the supply flow path. In this case, the same effect as the method of Example 3 can be obtained.

[0132] Example 14. In the apparatus of Example 12 or Example 13, the gas supply unit may also be configured to supply inactive gas to the receiving recess after a predetermined time has elapsed since the front end is disposed within the receiving recess. In this case, the same effect as the method of Example 4 can be obtained.

[0133] Example 15. Any of the devices in Examples 11 to 14 may further include an exhaust section, which is configured such that, during the supply of inactive gas to the receiving recess via the gas supply section, exhaust gas is discharged from the receiving recess through an exhaust flow path that is fluidly connected to the receiving recess. In this case, the same effect as the method in Example 5 can be obtained.

[0134] Example 16. In the apparatus of Example 15, the gas supply section and the exhaust section can also be configured to supply inactive gas to the receiving recess and exhaust gas from the receiving recess at approximately the same timing. In this case, the same effect as the method of Example 6 can be obtained.

[0135] Example 17. In the apparatus of Example 15 or Example 16, the opening of the exhaust flow path in the receiving recess may also be located lower than the opening of the supply flow path in the receiving recess. In this case, the same effect as the method of Example 7 can be obtained.

[0136] Example 18. In any of the devices in Examples 15 to 17, the exhaust flow rate of the exhaust section venting from the receiving recess can also be set to be greater than or equal to the supply flow rate of the inactive gas supplied to the receiving recess by the gas supply section. In this case, the same effect as the method in Example 8 can be obtained.

[0137] Example 19. In the apparatus of Example 18, the exhaust flow rate from the receiving recess can also be 1 liter / min to 5 liters / min. In this case, the same effect as the method of Example 9 can be obtained.

[0138] Example 20. Any of the devices in Examples 11 to 19 may further include a metal component configured to cover the vicinity of the opening of the receiving recess, or the vicinity of the area where the solvent and inactive gas merge in the supply flow path. In this case, the same effect as the method in Example 10 can be obtained.

[0139] Example 21. A computer-readable recording medium may also record a program for causing a substrate processing device to execute the methods of Examples 1 to 10. In this case, the same effect as the method of Example 1 can be obtained. In this specification, a computer-readable storage medium may also include a non-transitory computer recording medium (e.g., various main storage devices or auxiliary storage devices) and a transitory computer recording medium (e.g., data signals that can be provided via a network).

Claims

1. A substrate processing method, comprising the following steps: The front end of the nozzle that supplies the treatment liquid to the surface of the substrate is positioned in the receiving recess of the cleaning tank; After the front end is configured, solvent is supplied into the receiving recess through a supply flow path formed in the cleaning tank in such a way as to reach the receiving recess; After the solvent is supplied, an inactive gas is supplied into the receiving recess through the supply flow path; and During the supply of the inactive gas into the receiving recess, exhaust gas is vented from the receiving recess through an exhaust flow path fluidly connected to the receiving recess. in, The process includes drawing the solvent from the supply path after the solvent is supplied and before the inactive gas is supplied.

2. The substrate processing method according to claim 1, characterized in that, The process of attracting the solvent includes: allowing working fluid to flow through a discharge path in the middle section, which is fluidly connected to the supply path, to depressurize the supply path, thereby attracting and discharging the solvent from the supply path through the discharge path.

3. The substrate processing method according to claim 1 or 2, characterized in that, The process of supplying the inactive gas includes supplying the inactive gas into the receiving recess after a predetermined time has elapsed since the front end portion was positioned within the receiving recess.

4. The substrate processing method according to claim 1, characterized in that, The process of supplying the inactive gas and the process of venting from the receiving recess are performed at approximately the same time intervals.

5. The substrate processing method according to claim 1, characterized in that, The opening of the exhaust flow path in the receiving recess is located at a position lower than the opening of the supply flow path in the receiving recess.

6. The substrate processing method according to claim 1, characterized in that, The exhaust flow rate of the gas vented from the receiving recess is set to be greater than or equal to the supply flow rate of the inactive gas supplied to the receiving recess.

7. The substrate processing method according to claim 6, characterized in that, The exhaust flow rate from the receiving recess is 1 liter / min to 5 liters / min.

8. The substrate processing method according to claim 1, characterized in that, Use metal components to cover the vicinity of the opening of the receiving recess, or to cover the vicinity of the area in the supply flow path where the solvent and the inactive gas merge.

9. A substrate processing apparatus, characterized in that, have: The nozzle is configured to supply a processing liquid to the surface of the substrate. A cleaning tank having a receiving recess capable of receiving the front end of the nozzle and a supply flow path extending in a manner reaching the receiving recess; A drive unit configured to move the nozzle between the substrate and the cleaning tank; A solvent supply unit is configured to supply solvent into the receiving recess via the supply flow path; A gas supply unit is configured to supply inactive gas into the receiving recess through the supply flow path; An attraction section configured to attract the solvent remaining in the supply flow path; and The exhaust section is configured such that, during the supply of the inactive gas to the receiving recess via the gas supply section, exhaust is performed from the receiving recess through an exhaust flow path fluidly connected to the receiving recess.

10. The substrate processing apparatus according to claim 9, characterized in that, The suction unit includes: A discharge flow path, the middle portion of which is fluidly connected to the supply flow path; and The fluid supply unit is configured to allow working fluid to circulate in the discharge flow path to reduce pressure within the supply flow path.

11. The substrate processing apparatus according to claim 9 or 10, characterized in that, The gas supply unit is configured to supply the inactive gas to the receiving recess after a predetermined time has elapsed since the front end is disposed within the receiving recess.

12. The substrate processing apparatus according to claim 9, characterized in that, The gas supply section and the exhaust section are configured to supply the inactive gas into the receiving recess and exhaust the gas from the receiving recess at approximately the same timing.

13. The substrate processing apparatus according to claim 9, characterized in that, The opening of the exhaust flow path in the receiving recess is located lower than the opening of the supply flow path in the receiving recess.

14. The substrate processing apparatus according to claim 9, characterized in that, The exhaust flow rate for venting from the receiving recess using the exhaust section is set to be greater than or equal to the supply flow rate of the inactive gas supplied to the receiving recess using the gas supply section.

15. The substrate processing apparatus according to claim 14, characterized in that, The exhaust flow rate from the receiving recess is 1 liter / min to 5 liters / min.

16. The substrate processing apparatus according to claim 9, characterized in that, It also includes a metal component configured to cover the vicinity of the opening of the receiving recess or the vicinity of the region in the supply flow path where the solvent and the inactive gas merge.

17. A computer-readable recording medium, characterized in that, The program is recorded for causing the substrate processing apparatus to perform the substrate processing method according to claim 1.

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