Heating device, substrate processing system and heating method

Abstract

The present invention provides a heating device, a substrate processing system, and a heating method. When a substrate is preheated outside a processing device and the heated substrate is held and transported to the processing device by a conveying mechanism, the temperature of the substrate at the moment of arrival at the processing device is uniform within the substrate surface. A heating device for heating a substrate before transporting the substrate to a processing device is provided externally with a conveying mechanism for holding and transporting the substrate between the heating device and the processing device. The heating device includes a support portion for supporting the substrate and a heating portion having a light-emitting element for emitting light. The heating portion can utilize the light to independently heat each region of the substrate supported by the support portion when viewed from above, wherein the light output of the light-emitting element corresponding to the region within the substrate in contact with the substrate holding portion of the conveying mechanism is higher than the light output of the light-emitting element corresponding to other regions within the substrate.

Description

Technical Field

[0001] The invention relates to a heating device, a substrate processing system and a heating method. Background Art

[0002] Patent document 1 discloses a load lock device for transporting a substrate between a vacuum chamber maintained at a vacuum and a space with an atmospheric atmosphere. The load lock device includes: a first opening and closing mechanism configured to allow the pressure to fluctuate between the pressure corresponding to the vacuum chamber and atmospheric pressure; a first opening and closing mechanism that can be opened and closed between the vacuum chamber; and a second opening and closing mechanism that can be opened and closed between the space with the atmospheric atmosphere. The load lock device also includes a pressure regulating mechanism that regulates the pressure in the container to a pressure corresponding to the vacuum degree when the first opening and closing mechanism is opened and the interior of the container is connected to the vacuum chamber, and regulates the pressure in the container to atmospheric pressure when the second opening and closing mechanism is opened and the interior of the container is connected to the atmospheric atmosphere. The load lock device also includes a mounting table for mounting the substrate, which is disposed in the container, and a heating mechanism for heating the substrate disposed on the mounting table, wherein the heating mechanism has a heating source equipped with a solid-state light-emitting element.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2009-76705 Summary of the Invention

[0006] Technical problem to be solved by the invention

[0007] The technology of the present invention is to heat the substrate in advance outside the processing device, and when the heated substrate is held by a conveying mechanism and conveyed to the processing device, the temperature of the substrate is made uniform across the substrate surface when it arrives at the processing device.

[0008] Technical means to solve the problem

[0009] One embodiment of the present invention is a heating device for heating a substrate before conveying the substrate to a processing device, wherein a conveying mechanism for holding and conveying the substrate between the heating device and the processing device is provided outside the heating device, and the heating device comprises: a supporting portion for supporting the substrate; and a heating portion having a light-emitting element for emitting light, wherein the heating portion can utilize the light to independently heat each area of ​​the substrate supported by the supporting portion divided when viewed from above, and the light output of the light-emitting element corresponding to the area within the substrate in contact with the substrate holding portion of the conveying mechanism is higher than the light output of the light-emitting element corresponding to other areas within the substrate.

[0010] Effects of the Invention

[0011] According to the present invention, by preheating the substrate outside the processing apparatus and holding the heated substrate by a conveying mechanism and conveying it to the processing apparatus, the temperature of the substrate can be made uniform across the substrate surface when it reaches the processing apparatus. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a plan view showing a schematic configuration of a wafer processing system as a substrate processing system according to the first embodiment.

[0013] Figure 2 It is a top view showing the schematic structure of the transport picker.

[0014] Figure 3 It is a longitudinal sectional view showing the schematic structure of a load lock device.

[0015] Figure 4 It is a cross-sectional view showing a schematic structure of a heating unit.

[0016] Figure 5 These are a cross-sectional view and a plan view showing a schematic structure of a heating unit.

[0017] Figure 6 This is a diagram for explaining an example of a heating method of the heating unit.

[0018] Figure 7 This is a diagram for explaining another example of the heating method of the heating unit.

[0019] Figure 8 This is a diagram for explaining an example of a method for determining the heating start time.

[0020] Figure 9 It is a longitudinal sectional view showing a schematic structure of a load lock device as a heating device according to a second embodiment.

[0021] Description of Reference Numerals

[0022] 1 Wafer handling system

[0023] 12, 13 Load lock device

[0024] 32 conveying mechanism

[0025] 32d conveyor picker

[0026] 32e Conveyor Pickup

[0027] 40, 41, 42, 43 processing devices

[0028] 120 support pin

[0029] 130 Heating Unit

[0030] 131 LED

[0031] W chip DETAILED DESCRIPTION

[0032] In the manufacturing process of semiconductor devices, etc., substrates such as semiconductor wafers (hereinafter referred to as "wafers") are subjected to prescribed processes such as film forming and etching. For a long time, for the purpose of improving productivity, before conveying the substrates to the processing device that performs the above-mentioned processes, there has been a case where the substrates are heated outside the processing device, that is, a preliminary heat treatment is performed outside the processing device. For example, in Patent Document 1, a heating mechanism for heating the substrate is provided in a load lock device for transferring the substrate between a vacuum chamber maintained in a vacuum and a space with an atmospheric atmosphere. Then, after the substrate is heated by the heating mechanism of the load lock device, the substrate in the load lock device is received by a conveying device and conveyed to the vacuum processing device.

[0033] However, when performing preliminary heat treatment outside of a processing apparatus, in order to ensure that the processing results of the processing apparatus are uniform across the substrate surface, it is required that the substrate temperature be uniform across the substrate surface upon arrival at the processing apparatus. However, even if the substrate surface is uniformly heated outside of a processing apparatus such as a load lock, the in-plane uniformity of the substrate temperature will deteriorate upon arrival of the substrate by a transport apparatus. This is because the substrate is held by a substrate holder of the transport apparatus during transport to the processing apparatus. The temperature of the substrate holder is lower than that of the heated substrate. Therefore, the portion of the heated substrate held by the substrate holder will be significantly lower in temperature than the rest of the substrate until it is transported to the processing apparatus.

[0034] Therefore, the technology of the present invention is to preheat the substrate outside the processing device, and when the heated substrate is held by a conveying mechanism and conveyed to the processing device, the temperature of the substrate when it arrives at the processing device is made uniform across the substrate surface.

[0035] Hereinafter, the heating device, substrate processing system and heating method of this embodiment will be described with reference to the accompanying drawings. In addition, in this specification and the accompanying drawings, elements having substantially the same functional structure are marked with the same reference numerals and repeated descriptions are omitted.

[0036] (First embodiment)

[0037] Figure 1 1 is a plan view schematically showing the configuration of a wafer processing system 1 as a substrate processing system according to a first embodiment. The wafer processing system 1 performs predetermined processes such as film formation, diffusion, and etching on wafers W as substrates under reduced pressure.

[0038] Wafer processing system 1 comprises a carrier station 10 and a processing station 11, which are integrally connected. Carrier station 10 is capable of loading and unloading carriers C capable of accommodating multiple wafers W. Processing station 11 includes a plurality of various processing devices for performing predetermined processing on wafers W under reduced pressure. Carrier station 10 and processing station 11 are connected via two load locks 12 and 13.

[0039] The load locks 12 and 13 have housings defining load lock chambers 12a and 13a, respectively. These chambers are configured to switch between atmospheric pressure and vacuum conditions. The load locks 12 and 13 are configured to connect to the atmospheric pressure transfer system 20 and vacuum transfer system 30, described later. Details of the structures of the load locks 12 and 13 will be described later.

[0040] The carrier station 10 includes an atmospheric pressure transfer device 20 and a carrier placement table 21. In addition, the carrier station 10 may be provided with an aligner (not shown) for adjusting the orientation of the wafer W.

[0041] The atmospheric pressure transfer apparatus 20 includes a housing forming an atmospheric transfer chamber 22, which maintains an atmospheric pressure. The atmospheric transfer chamber 22 is connected to the load lock chambers 12a and 13a of the load lock apparatuses 12 and 13 via gates G1 and G2. A transfer mechanism 23 is provided within the atmospheric transfer chamber 22 for transferring wafers W between the load lock chambers 12a and 13a under atmospheric pressure.

[0042] The transport mechanism 23 includes two transport arms 23a and 23b. Each of the transport arms 23a and 23b is a multi-jointed arm having a wafer holding portion at its tip, which serves as a substrate holding portion for holding the wafer W. Furthermore, the transport mechanism 23 is configured so that the wafer W is held and transported by either of the transport arms 23a and 23b.

[0043] The carrier stage 21 is provided on the side of the atmospheric pressure transfer apparatus 20 opposite the load lock apparatuses 12 and 13. In the illustrated example, the carrier stage 21 can accommodate a plurality of, for example, three, carriers C. Wafers W placed in the carriers C on the carrier stage 21 are transported into and out of the atmospheric transfer chamber 22 by transport arms 23 a and 23 b of the transport mechanism 23 of the atmospheric pressure transfer apparatus 20.

[0044] The processing station 11 includes a vacuum transport device 30 and processing devices 40 to 43 .

[0045] The vacuum transfer unit 30 includes a housing that forms a vacuum transfer chamber 31, which is maintained in a reduced pressure state (vacuum state). This housing is sealable and, for example, has a generally polygonal shape (hexagonal in the illustrated example) when viewed from above. The vacuum transfer chamber 31 is connected to the load lock chambers 12a and 13a of the load lock units 12 and 13 via gates G3 and G4. A transfer mechanism 32 is located within the vacuum transfer chamber 31 for transferring wafers W between the vacuum processing chambers 44 to 47 of the processing units 40 to 43, described later.

[0046] The transport mechanism 32 includes two transport arms 32a and 32b and a base 32c. The transport arms 32a and 32b are each multi-jointed arms, each equipped with a transport picker 32d or 32e at its tip, serving as a substrate holding portion for holding the wafer W. The base 32c pivotally supports the base end of each of the transport arms 32a and 32b. Furthermore, the transport mechanism 32 is configured so that the wafer W is held and transported by either of the transport arms 32a and 32b.

[0047] Figure 2 32d is a top view showing the schematic structure of the transport pickup 32d. Figure 2 As shown, it is formed into a plate-like component that is roughly U-shaped when viewed from above. The material of the transport pickup 32d is, for example, ceramic. In addition, the material of the transport pickup 32d can also be made of metal. On the upper surface of the transport pickup 32d, more than three (three in the example of the figure) support protrusions 33 are vertically provided. Each support protrusion 33 contacts the back side of the wafer W when the transport pickup 32d holds the wafer W. The structure of the transport pickup 32e is the same as that of the transport pickup 32d, so its description is omitted.

[0048] return Figure 1 Description. Processing devices 40-43 and load locks 12 and 13 are arranged outside the housing of vacuum transfer apparatus 30, which forms vacuum transfer chamber 31, so as to surround the housing. Load lock 12, processing devices 40-43, and load lock 13 are arranged, for example, in a clockwise direction from load lock 12 when viewed from above, and face the side surfaces of the housing forming vacuum transfer chamber 31.

[0049] The processing units 40-43 perform predetermined processes, such as film formation, diffusion, and etching, on the wafers W under reduced pressure. Furthermore, each of the processing units 40-43 includes a housing forming a vacuum processing chamber 44-47. Within these vacuum processing chambers 44-47, the predetermined processes are performed on the wafers W under reduced pressure. The vacuum processing chambers 44-47 are connected to the vacuum transfer chamber 31 of the vacuum transfer unit 30 via gates G5-G8, respectively, serving as gate valves. Furthermore, the processing unit 40-43 can be arbitrarily selected to perform a process corresponding to the purpose of wafer processing.

[0050] The above-described wafer processing system 1 is provided with a control device 50. The control device 50 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores programs for controlling wafer processing in the wafer processing system 1. Specifically, the program storage unit stores programs for determining a transfer schedule for each wafer W and a program for determining a processing schedule for each of the processing devices 40 to 43. These programs may also be recorded on a computer-readable storage medium H and installed from the storage medium H into the control device 50.

[0051] Next, use Figures 3 to 7 The load lock device 12 will be described. Figure 3 It is a longitudinal sectional view showing a schematic structure of the load lock device 12 . Figure 4 and Figure 5 These are a cross-sectional view and a plan view showing a schematic structure of a heating unit described later. Figure 6 and Figure 7 It is a diagram for explaining the heating method of the heating unit.

[0052] The load lock device 12 is as follows Figure 3 The housing 100 is shown as being designed to be internally decompressible.

[0053] Inlet and outlet ports 101 a and 101 b are formed on mutually opposing side walls of the housing 100 , and gates G1 and G3 are provided on the inlet and outlet ports 101 a and 101 b , respectively.

[0054] An exhaust port 102 for reducing the pressure of the atmosphere inside the housing 100 to a predetermined vacuum level is formed on the bottom wall of the housing 100. An exhaust mechanism 110 including a vacuum pump or the like is connected to the exhaust port 102.

[0055] Furthermore, a gas supply port 103 for returning the interior of the housing 100 to atmospheric pressure is formed on the bottom wall of the housing 100. A gas supply mechanism 111 for supplying an inert gas such as N2 gas is connected to the gas supply port 103.

[0056] Furthermore, inside the housing 100 , a plurality of (eg, three) support pins 120 serving as a support portion for supporting the wafer W are provided so as to extend upward from the bottom wall.

[0057] Furthermore, an opening 104 is formed in the top wall of the housing 100, and an optical window 105 is provided to close the opening 104. The optical window 105 is formed of a material that transmits light from an LED (to be described later).

[0058] A heating unit 130 for heating the wafer W supported by the support pins 120 with light is provided above the optical window 105 located outside the housing 100. The heating unit 130 is disposed opposite to the support pins 120 with the optical window 105 interposed therebetween.

[0059] The heating unit 130 is as follows Figure 4 As shown in FIG. 1 , as light emitting elements, there are a plurality of LEDs 131 directed toward the wafer W, and the wafer W is heated by light from these LEDs 131. Specifically, the heating portion 130 has a plurality of LED units U and a base 132 on which the LED units U are mounted. The LED units U are obtained by unitizing the plurality of LEDs 131. For example, the LED units U in the heating portion 130 are as follows: Figure 5 As shown, the base 132 is substantially entirely covered by the unit U1, which is square in plan view, and the unit U2, which is non-square in plan view and surrounds the unit U1. The mounting area of ​​the LED unit U in the base 132 is set so as to cover the wafer W supported by the support pins 120 in plan view. Therefore, light from the LEDs 131 of the LED units U can be irradiated onto the entire wafer W supported by the support pins 120.

[0060] Each LED 131 irradiates light toward the wafer W. For example, each LED 131 emits near-infrared light that can heat the Si wafer W. The light emitted from the LED 131 (hereinafter sometimes abbreviated as "LED light") passes through the optical window 105 and is incident on the wafer W supported by the support pins 120.

[0061] The base 132 is formed into a disk shape with a diameter slightly larger than the optical window 105 when viewed from above, and is supported by a portion of the housing 100 surrounding the optical window 105. Figure 4 As shown, a recess 132a is formed on its surface, and LED 131 is mounted within recess 132a. Furthermore, a cooling flow path 132b is formed above recess 132a in base 132 for flowing a coolant for cooling LED 131. Cooling water is used as the coolant, for example. Base 132 is formed of a metal material such as aluminum.

[0062] Furthermore, the heating unit 130 includes a control circuit board 133 for controlling lighting of the LED 131. The control circuit board 133 is mounted on the upper surface of the base 132, for example.

[0063] In the heating unit 130, the on / off switching and intensity of the LED light (i.e., the light output of the LED 131) are controlled by the control circuit board 133 for each LED unit U. The heating unit 130 can irradiate LED light only to a specific area of ​​the wafer W supported by the support pins 120, or can vary the intensity of the irradiated light between a specific area and other areas. In other words, the heating unit 130 can use LED light to independently heat each area of ​​the wafer W supported by the support pins 120 when viewed from above. Therefore, the heating unit 130 can locally change the temperature of the wafer W supported by the support pins 120 after heating.

[0064] For example, with the heating unit 130, under the control of the control circuit board 133, as shown in FIG. Figure 6 As shown, the light output of each of the LED units U (units UR indicated in gray in the figure) corresponding to the region within the wafer W that contacts the support protrusions 33 of the transport pickups 32d and 32e is made higher than the light output of the LED units U corresponding to other regions within the wafer W. In other words, among the LED units, only the LED units U (units UR in the figure) corresponding to the region within the wafer W that contacts the support protrusions 33 of the transport pickups 32d and 32e have relatively high light output.

[0065] In addition, when the upper surfaces of the transport pickups 32d and 32e do not have the support protrusions 33 and the wafer W is supported by substantially the entire upper surfaces of the transport pickups 32d and 32e, the light output of the LED unit U is adjusted as follows. That is, under the control of the control circuit board 133, as shown in FIG. Figure 7 As shown, the light output of each LED unit (unit UR represented by gray in the figure) corresponding to the area within the chip W that contacts the upper surface of the conveying pickup 32d, 32e is higher than the light output of the LED unit U corresponding to other areas within the chip W.

[0066] By adjusting the light output of the LED unit U as described above, after the wafer W is heated by the heating unit 130, the temperature of the region of the wafer W that may come into contact with the transport pickers 32d and 32e (hereinafter sometimes referred to as the "pickup contact region") can be made higher than that of other regions. In particular, for example, by appropriately setting the light output of the LED unit U corresponding to the picker contact region, the temperature of the picker contact region can be made higher by the amount of heat absorbed by the transport pickers 32d and 32e during the period from when the heated wafer W is transported by the transport mechanism 32 to when it reaches the processing devices 40 to 43.

[0067] Note that the structure of the load lock apparatus 13 is the same as that of the load lock apparatus 12 , and therefore description thereof will be omitted.

[0068] Next, wafer processing performed using the wafer processing system 1 configured as described above will be described.

[0069] First, the transfer arm 23a of the transfer mechanism 23 is inserted into the carrier C to hold a wafer W. Next, the transfer arm 23a is withdrawn from the carrier C, opening the gate G1. Afterwards, the transfer arm 23a is inserted from the atmospheric pressure transfer device 20 into the housing 100 of the load lock device 12, and the wafer W is transferred from the transfer arm 23a to the support pins 120.

[0070] Next, the transfer arm 23a is withdrawn from the housing 100 of the load lock apparatus 12, and the gate G1 is closed to seal and depressurize the interior of the housing 100 of the load lock apparatus 12. Simultaneously with or after the depressurization begins, heating by the heating unit 130 begins.

[0071] Specifically, the control circuit board 133 of the heating section 130 turns on all the LED units U based on the heating start time determined by the control device 50, and starts heating the wafer W on the support pins 120 using LED light. After the heating starts, for example, when a preset heating processing time has elapsed, the control circuit board 133 of the heating section 130 turns off all the LED units U, and ends the heating of the wafer W using LED light.

[0072] When heating is performed using the LED light, for example, the LED unit U ( Figure 6 The light output of the LED unit U corresponding to the pickup contact area is higher than the light output of the LED unit U corresponding to other areas within the wafer W. In addition, the information of the LED unit U corresponding to the pickup contact area is pre-stored in, for example, a memory (not shown) of the control circuit board 133. In addition, the light output value of the LED unit U set to low output (specifically, the current value supplied to each LED 131 to obtain this output value) and the light output value of the LED unit U set to high output are pre-set by the control device 50 based on, for example, the heating target temperature, and are pre-stored in, for example, a memory (not shown) of the control circuit board 133.

[0073] After the heating process in the heating section 130 is completed, the gate G3 is opened to connect the interior of the load lock apparatus 12 with the interior of the vacuum transfer apparatus 30. The transfer picker 32 d of the transfer mechanism 32 is then inserted into the housing 100 of the load lock apparatus 12, and receives and holds the wafer W from the support pins 120. The transfer picker 32 d is then withdrawn from the housing 100 of the load lock apparatus 12, thereby transferring the wafer W from the load lock apparatus 12 to the vacuum transfer apparatus 30.

[0074] Next, after closing gate G3, gate G5 corresponding to the processing apparatus (here, processing apparatus 40) performing the target process is opened. Next, transfer pickup 32d holding wafer W is inserted into vacuum processing chamber 44 of processing apparatus 40, which has been depressurized, and wafer W is transferred to a stage (not shown) or the like within vacuum processing chamber 44.

[0075] Afterwards, transport pickup 32d is withdrawn from vacuum processing chamber 44, and gate G5 is closed, sealing vacuum processing chamber 44. Within vacuum processing chamber 44, the wafer W is then subjected to the prescribed treatment at a temperature higher than room temperature. This temperature, for example, is 80°C or higher. The technology of the present invention utilizes light for heating, enabling rapid heating to the target temperature. Therefore, it is also applicable to processing temperatures above 700°C in processing apparatus 40.

[0076] After the predetermined processing is completed, gate G5 is opened. Then, transport picker 32d is inserted into vacuum processing chamber 44 to receive and hold wafer W. Next, transport picker 32d is withdrawn from vacuum processing chamber 44, thereby transporting wafer W from vacuum processing chamber 44 to vacuum transfer unit 30. Gate G5 is then closed.

[0077] Next, the gate G3 is opened. The transport picker 32 d is then inserted into the housing 100 of the load lock apparatus 12, and the wafer W is transferred from the transport picker 32 d to the support pins 120. Next, the transport picker 32 d is withdrawn from the housing 100 of the load lock apparatus 12, and the gate G3 is closed. The interior of the housing 100 is then returned to atmospheric pressure.

[0078] Next, after the gate G1 is opened, the transfer arm 23a of the transfer mechanism 23 is inserted into the housing 100 of the load lock apparatus 12, receiving and holding the wafer W from the support pins 120. The transfer arm 23a is then withdrawn from the housing 100 of the load lock apparatus 12, and the gate G1 is closed. The transfer arm 23a is then inserted into the carrier C, and after the wafer W is transferred and stored in the carrier C, the transfer arm 23a is withdrawn from the carrier C. This completes a series of wafer processing operations in the wafer processing system 1.

[0079] The above series of processes are performed on all wafers W stored in the carrier C, for example.

[0080] In addition, the heating start time of the heating unit 130 in this series of processes is determined by the control device 50 for each wafer W. Specifically, Figure 8 As shown, the heating start time (start time) T is determined based on the following (1) to (3), for example.

[0081] (1) The time when the processing device processing the wafer W ends the processing of the previous wafer W (end time Tr)

[0082] (2) Heating treatment time L1

[0083] (3) The time required to transport the wafer W from the load lock device used for the wafer W to the processing device that processes the wafer W (specifically, the time required to transport the wafer W to the front of the gate facing the processing device) L2

[0084] For example, the heating start time T can be expressed by the following formula.

[0085] T=Tr-(L1+L2)

[0086] The information in (1) can be obtained from the processing flow arrangement created by each processing device in the control device 50. In addition, the information in (2) and (3) can be stored in advance in, for example, a storage unit (not shown) of the control device 50. In addition, the information in (3) can also be the result of actual measurement during production or maintenance.

[0087] As described above, in this embodiment, the load locks 12 and 13 are equipped with a heating unit 130 to heat the wafer W before transporting it to the processing units 40 to 43. The heating unit 130 includes LEDs 131 that emit light to independently heat each region of the wafer W supported by the support pins 120 when viewed from above. Furthermore, in this embodiment, the light output of the LED units U corresponding to the pickup contact regions within the wafer W (i.e., the light output of the LEDs 131) is higher than the light output of the LED units U corresponding to other regions within the wafer W. Consequently, the temperature of the wafer W in the pickup contact regions can be increased by an amount that is expected to decrease due to heat absorption by the transport pickups 32d and 32e during transport to the processing units 40 to 43. Therefore, according to this embodiment, the temperature of the wafer W at the time of arrival at the processing units 40 to 43 can be uniform across the wafer surface. As a result, productivity can be improved and the processing results in the processing units 40 to 43 can be uniform across the wafer surface.

[0088] Furthermore, in this embodiment, the heating start time of the heating unit 130 is determined based on (1) to (3) above. Therefore, the time from the completion of heating by the heating unit 130 to the start of processing by the processing devices 40 to 43 (hereinafter referred to as the "processing wait time") can be minimized. Therefore, during the processing wait time, the temperature drop of the wafer W can be suppressed. Consequently, the temperature of the wafer W at the time of arrival at the processing devices 40 to 43 can be uniformed within the wafer surface at the target temperature with high energy efficiency.

[0089] (Second embodiment)

[0090] Figure 9 It is a longitudinal sectional view showing a schematic structure of a load lock device as a heating device according to a second embodiment. Figure 9 The load lock device 12 is in addition Figure 3 In addition to the components of the load lock device 12 shown in the figure, a radiation thermometer 200 as a temperature detection unit is also included.

[0091] The radiation thermometer 200 detects the temperature of the conveyor pickups 32d and 32e. Specifically, the radiation thermometer 200 detects the temperature of the upper surface of the conveyor pickups 32d and 32e based on the intensity of infrared rays radiated from the upper surface of the conveyor pickups 32d and 32e inserted into the housing 100. The radiation thermometer 200 is, for example, arranged on the outside of the housing 100 and receives the above-mentioned infrared rays through an optical window 201 provided on the top wall of the housing 100. In addition, the change in the radiation intensity of the infrared rays corresponding to the temperature change can also be achieved by attaching a sheet-like component made of a material larger than the material of the conveyor pickups 32d and 32e to the upper surface of the conveyor pickups 32d and 32e, and detecting the temperature of the upper surface of the conveyor pickups 32d and 32e based on the intensity of the infrared rays from the component.

[0092] Depending on the temperature of the transport pickups 32 d and 32 e , the transport pickups 32 d and 32 e absorb different amounts of heat from the wafer W. Therefore, in this embodiment, the control device 50 determines a parameter related to the amount of heat of the LED unit U corresponding to the pickup contact area within the wafer W based on the measurement results of the temperatures of the transport pickups 32 d and 32 e by the radiation thermometer 200 .

[0093] Specifically, for example, the temperature of the upper surface of the transport pickup 32d is measured each time the transport pickup 32d is inserted into the housing 100 to receive the wafer W, and then the control device 50 determines the above parameters based on the measured average value of the temperature of the upper surface of the transport pickup 32d.

[0094] The above parameters are, for example, at least one of the light output value from the LED unit U (hereinafter referred to as "high-output unit U") corresponding to the pickup contact area and the heating time of the high-output unit U (ie, the irradiation time of the LED light).

[0095] Based on the measurement results of the radiation thermometer 200, if the heating time of the high-output unit U is determined to be heating, the heating time of the LED units U corresponding to other areas (referred to as "low-output units U") can be changed to be equal to the heating time of the high-output unit U. However, the heating time of the low-output unit U can also be kept constant without changing in accordance with the heating time of the high-output unit U. Furthermore, when the heating time of the low-output unit U is changed to be equal to the heating time of the high-output unit U, the light output value of the low-output unit U is also changed so that the amount of heat applied to the wafer W by the low-output unit U after the change is the same as before the change.

[0096] (Variation)

[0097] In the above example, the heating units 130 of the load locks 12 and 13 only heat the wafer W. However, the load locks 12 and 13 may also heat the transport pickers 32 d and 32 e using the heating units 130. The heated transport pickers 32 d and 32 e then hold the wafer W and transport it to the processing units 40 to 43. This can reduce the amount of heating that would be expected to decrease due to heat absorption by the transport pickers 32 d and 32 e during transport. Consequently, damage to the wafer W caused by heating by the heating unit 130 can be reduced.

[0098] Furthermore, the heating of the transport pickers 32d and 32e by the heating units 130 of the load locks 12 and 13 can be performed, for example, when no wafer W is present in the load locks 12 and 13. Furthermore, for example, the transport picker 32d can be heated by the heating unit 130 of the load lock 13 while the wafer W is being heated by the heating unit 130 of the load lock 12. This allows the temperature of the heated transport picker 32d to be kept constant while holding the heated wafer W, thereby accurately predicting the amount of heat absorbed by the heated transport picker 32d.

[0099] Furthermore, when the transport pickups 32d and 32e are heated by the heating unit 130 of the load lock apparatuses 12 and 13, the transport pickups 32d and 32e may be formed of a material that can efficiently absorb light from the LED 131 (for example, the same material as the wafer W). Furthermore, the surfaces of the transport pickups 32d and 32e may be covered (coated) with a material that can efficiently absorb light from the LED 131.

[0100] In the above example, the load locks 12 and 13 are configured as heating devices that perform preliminary heating and include the heating unit 130. Alternatively, a heating device including the heating unit 130 may be provided separately from the load locks 12 and 13 and connected to the vacuum transfer device 30.

[0101] In the above example, in the heating unit 130 , on / off and intensity of the LED light are controlled in units of the LED unit U in which the plurality of LEDs 131 are integrated. However, the control may be performed in units of the LEDs 131 .

[0102] The embodiments disclosed herein are to be considered in all respects as illustrative and non-restrictive, and the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the appended claims.

Claims

1. A heating device for heating a substrate before transporting the substrate to a processing device, characterized in that: A transport mechanism for holding and transporting the substrate between the heating device and the processing device is provided outside the heating device. The heating device comprises: a support portion that supports the substrate; and Heating unit, The heating unit has: base; a light emitting element provided on the lower surface of the base, emitting light to heat the substrate supported by the support portion independently in each region divided when viewed from above; and a control circuit board mounted on an upper surface of the base opposite to the lower surface and having a memory, the memory storing: a first light output value of the light-emitting element corresponding to a first area within the substrate in contact with the substrate holding portion of the conveying mechanism; and a second light output value of the light-emitting element corresponding to a second area within the substrate not in contact with the conveying mechanism, the control circuit board controlling the light output of the light-emitting element based on the first and second light output values ​​stored in the memory. The control circuit board sets the light output of the light-emitting element corresponding to the first area in the substrate in contact with the substrate holding portion of the conveying mechanism to be higher than the light output of the light-emitting element corresponding to the second area in the substrate not in contact with the conveying mechanism based on the first light output value and the second light output value stored in the memory, so that the temperature of the first area in the substrate in contact with the substrate holding portion of the conveying mechanism is higher than the temperature of the second area in the substrate not in contact with the conveying mechanism by the amount predicted to be reduced due to heat absorption by the substrate holding portion of the conveying mechanism during conveyance to the processing device.

2. The heating device according to claim 1, wherein: The processing device is a device for processing substrates in sequence, The time when the heating unit starts heating the substrate is determined based on the time when the processing device ends the processing of the previous substrate, the time required for heating by the heating unit, and the estimated time required for the conveying mechanism to convey the heated substrate to the processing device.

3. The heating device according to claim 1 or 2, characterized in that: further comprising a temperature detection unit for detecting the temperature of the substrate holding portion of the conveying mechanism, A parameter related to the amount of heating of the light emitting element corresponding to a region within the substrate that contacts the substrate holding portion of the transport mechanism is determined based on a detection result of the temperature detection unit.

4. The heating device according to claim 1 or 2, characterized in that: The heating device constitutes a load lock device for transferring a substrate between a space with a vacuum atmosphere and a space with an atmospheric pressure atmosphere.

5. A substrate processing system, characterized in that: include: The heating device according to any one of claims 1 to 4; the processing device; and The conveying mechanism, The heating portion also heats the substrate holding portion of the conveying mechanism. The transport mechanism holds and transports a substrate using the substrate holding portion heated by the heating portion.

6. A heating method for heating a substrate using a heating device before transporting the substrate to a processing device, characterized in that: A transport mechanism for holding and transporting the substrate between the heating device and the processing device is provided outside the heating device. The heating device comprises: a support portion that supports the substrate; and Heating unit, The heating unit has: base; a light emitting element provided on the lower surface of the base, emitting light to heat the substrate supported by the support portion independently in each region divided when viewed from above; and a control circuit board mounted on an upper surface of the base opposite to the lower surface and having a memory, the memory storing: a first light output value of the light-emitting element corresponding to a first area within the substrate in contact with the substrate holding portion of the conveying mechanism; and a second light output value of the light-emitting element corresponding to a second area within the substrate not in contact with the conveying mechanism, the control circuit board controlling the light output of the light-emitting element based on the first and second light output values ​​stored in the memory. The heating method comprises the steps of heating the substrate with the heating portion, In the heating step, the control circuit board sets the light output of the light-emitting element corresponding to the first area in the substrate in contact with the substrate holding portion of the conveying mechanism to be higher than the light output of the light-emitting element corresponding to the second area in the substrate not in contact with the conveying mechanism based on the first light output value and the second light output value stored in the memory, so that the temperature of the first area in the substrate in contact with the substrate holding portion of the conveying mechanism is increased than the temperature of the second area in the substrate not in contact with the conveying mechanism by the amount predicted to be reduced due to heat absorption by the substrate holding portion of the conveying mechanism during conveyance to the processing device.

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