Real-time self-checking method and periodic self-checking method for single-wafer rotary cleaning equipment and single-wafer rotary cleaning equipment

Abstract

The present invention discloses a real-time self-inspection method, a periodic self-inspection method and a single-chip rotary cleaning device. The single-chip rotary cleaning device is used for cleaning substrates and can perform real-time self-inspection and periodic self-inspection. The single-chip rotary cleaning device includes a mechanical fixture, a rotating mechanism, and an optical image sensor. The rotating mechanism has a rotating platform and also includes an analysis mechanism. The optical image sensor can observe the edge jump of the substrate during rotation. The analysis mechanism can determine whether the device has a fault by analyzing the jump value. A calibration substrate is also included. The optical image sensor can observe the image of the calibration substrate during rotation. The analysis mechanism can determine whether the device has a fault by analyzing the image. The real-time self-inspection method and the periodic self-inspection method of the single-chip rotary cleaning device can avoid the occurrence of unexpected situations, promptly detect the mechanical deviation caused by the rotating mechanism, and are conducive to improving the safety and stability of the single-chip rotary cleaning process.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor wafer cleaning, and in particular to a real-time self-inspection method and a periodic self-inspection method for single-wafer rotary cleaning equipment, and the single-wafer rotary cleaning equipment. Background Art

[0002] During the single-wafer rotation cleaning process of semiconductor wafers, due to mechanical precision issues, there may be a certain deviation between the center line of the substrate and the rotation center line of the rotating mechanism. In particular, the rotating mechanism may cause the rotating stage to shift due to loose equipment and other reasons during long-term operation. This deviation is allowed within a certain range and will not cause any product defects. However, when this deviation exceeds the controllable range, it will cause a large imbalance. In addition, due to the process requirements of high-speed rotation, this imbalance can easily cause flying chips and debris. In the existing technology, most of the time, the position of the single chip on the rotating mechanism is detected and calibrated, but this detection and calibration cannot ensure the accuracy and stability of the rotating mechanism itself.

[0003] In addition, the semiconductor wafer to be cleaned may have certain deformations such as warping. When this deformation exceeds the controllable range, it will also affect the cleaning and subsequent processing of the wafer. Summary of the Invention

[0004] In view of this, the present invention discloses a real-time self-test method and a periodic self-test method for a single-wafer rotary cleaning device, as well as a single-wafer rotary cleaning device, which can realize real-time and periodic detection of the rotating mechanism. The detection method no longer requires human intervention after various parameters are pre-set, and is fully automatic under computer control.

[0005] The present invention solves the above-mentioned technical problems through the following technical solutions: A real-time self-test method for a single-wafer rotary cleaning device, comprising the following steps: S10: presetting the motion trajectory of a mechanical fixture and calibrating it so that the mechanical fixture can place the substrate on a rotating platform in the cleaning device and ensure that the center line of the substrate coincides with the rotation center line of the rotating platform; S20: placing the substrate to be cleaned on the rotating platform by the mechanical fixture, and rotating the rotating platform at a detection rate; S30: observing the image of the edge of the substrate during rotation by an optical image sensor and recording the runout value D of the substrate edge. i ; S40: The substrate edge runout value D i Compared with the preset value D0, the jump value D i When the value D0 is greater than the preset value, the rotating stage stops running and the cleaning equipment sends a fault signal. i When the value is less than the preset value D0, the rotary stage rotates at a preset cleaning rate and starts the cleaning work normally. After the substrate is cleaned, a new substrate is replaced and steps S20-S40 are repeated.

[0006] In this technical solution, by adopting the above method, the concentricity of the substrate and the rotating stage can be observed in real time, which is beneficial to avoid the occurrence of unexpected situations during the single-wafer rotation cleaning process and improve the safety of the cleaning process.

[0007] Preferably, a calibration substrate is additionally provided, and specific reference lines or reference points are etched on the calibration substrate, and the following steps are further included: after the cleaning device has been running for a period of time, or after a certain number of substrates have been cleaned, step S50 is performed: the calibration substrate is placed on the rotating stage by the mechanical fixture, the rotating stage rotates at a detection rate, and the image P presented on the calibration substrate during the rotation is observed by the optical image sensor. i .

[0008] In this technical solution, by adopting the above method, the accuracy of the rotating mechanism can be periodically inspected, which is beneficial to improving the stability of the cleaning process. After the initial parameters are set, subsequent periodic inspections do not require human participation, and only manual maintenance is required when a fault occurs, which is beneficial to improving work efficiency.

[0009] Preferably, the method further comprises the following steps: S61: analyzing the image P by an analysis mechanism i , according to the image P i To determine whether it is necessary to stop the rotation stage and send a fault signal, if the deviation is within an acceptable range, remove the calibration substrate and re-execute step S20.

[0010] In this technical solution, by adopting the above method, it is possible to determine whether the rotating stage is offset by analyzing the image generated during the rotation of the calibration substrate, which is conducive to further improving the detection accuracy.

[0011] Preferably, the method further includes the following steps: between S10 and S20, there is a step S11: placing the calibration substrate on the rotating stage by the mechanical fixture, rotating the stage at the detection rate, observing and recording the image P0 on the calibration substrate during the initial rotation process by the optical image sensor; after S50, there is also a step S62: recording the image P i Compare with P0, according to P i The comparison with P0 is used to determine whether it is necessary to stop the operation of the rotary stage and issue a fault signal. If the deviation is within an acceptable range, the calibration substrate is removed and step S20 is executed again.

[0012] In this technical solution, by adopting the above method, the rotation image of the calibration substrate in the initial stage can be compared with the rotation image of the calibration substrate during detection to determine whether the rotating stage is offset, which is conducive to further improving the detection accuracy.

[0013] Preferably, the preset value D0 is 0.2-0.5 mm.

[0014] In this technical solution, by adopting the above method, different detection accuracies can be set according to different requirements, which is beneficial to controlling the fault tolerance rate in the detection process and improving detection efficiency.

[0015] Preferably, the detection rate ranges from 20 to 200 rpm.

[0016] In this technical solution, by adopting the above method, the rotation speed during the detection process can be controlled within an appropriate range, which is conducive to balancing the detection efficiency and detection accuracy.

[0017] Preferably, step S50 is performed after the cleaning equipment has been running for more than 200 hours.

[0018] Preferably, step S50 is performed after the cleaning device has cleaned more than 500 substrates.

[0019] In this technical solution, by adopting the above method, different detection cycles can be set according to different working conditions, which is conducive to balancing the safety and work efficiency of the cleaning equipment.

[0020] A periodic self-test method for a single-wafer rotary cleaning device comprises the following steps: presetting a motion trajectory of a mechanical fixture and calibrating it so that the mechanical fixture can place a substrate on a rotary carrier in the cleaning device and ensure that the center line of the substrate coincides with the rotation center line of the rotary carrier; placing the substrate to be cleaned on the rotary carrier by means of the mechanical fixture to clean the substrate; providing a calibration substrate and etching specific reference lines or reference points on the calibration substrate; after the cleaning device has been running for a period of time, or after a certain number of substrates have been cleaned, placing the calibration substrate on the rotary carrier by means of the mechanical fixture, rotating the rotary carrier at a detection rate, and observing an image P presented on the calibration substrate during the rotation process by means of an optical image sensor. i Analyze the image P by analyzing the image P i , according to the image P i To determine whether it is necessary to stop the rotation stage and issue a fault signal. If the deviation is within the acceptable range, remove the calibration substrate and continue the cleaning work normally.

[0021] In this technical solution, the above method can be used to periodically check the accuracy of the rotating mechanism, which is beneficial for improving the stability of the cleaning process. After the initial parameters are set, subsequent periodic inspections do not require manual intervention, and only manual maintenance is required when a fault occurs, which is beneficial for improving work efficiency. By analyzing the image generated during the rotation of the calibration substrate, it is possible to determine whether the rotating stage has deviated, which is beneficial for further improving the detection accuracy.

[0022] A periodic self-inspection method for a single-wafer rotary cleaning device comprises the following steps: presetting a motion trajectory of a mechanical fixture and calibrating it so that the mechanical fixture can place a substrate on a rotary carrier in the cleaning device and ensure that the center line of the substrate coincides with the rotation center line of the rotary carrier; providing a calibration substrate and etching a specific reference line or reference point on the calibration substrate; placing the calibration substrate on the rotary carrier by means of the mechanical fixture, the rotary carrier rotating at a detection rate, and observing and recording an image P0 presented on the calibration substrate during the initial rotation process by means of an optical image sensor; placing a substrate to be cleaned on the rotary carrier by means of the mechanical fixture to clean the substrate; after the cleaning device has been running for a period of time, or after a certain number of substrates have been cleaned, placing the calibration substrate on the rotary carrier by means of the mechanical fixture, the rotary carrier rotating at a detection rate, and observing an image P presented on the calibration substrate during the rotation process by means of the optical image sensor. i ; Through the analysis mechanism, the image P i Compare with P0, according to P i The comparison with P0 determines whether it is necessary to stop the rotation stage and issue a fault signal. If the deviation is within the acceptable range, remove the calibration substrate and continue the cleaning work normally.

[0023] In this technical solution, by adopting the above method, the accuracy of the rotating mechanism can be periodically tested, which is beneficial to improving the stability of the cleaning process. After the initial parameters are set, subsequent periodic tests do not require manual intervention, and only manual repairs are required when a fault occurs, which is beneficial to improving work efficiency. By comparing the rotation image of the calibration substrate in the initial stage with the rotation image of the calibration substrate during testing, it is determined whether the rotating stage has deviated, which is beneficial to further improve the detection accuracy.

[0024] A single-wafer rotary cleaning device comprises a cleaning device, a mechanical clamp, a rotating mechanism, and an optical image sensor. The rotating mechanism is provided with a rotating stage and also comprises an analyzing mechanism, so that the single-wafer rotary cleaning device can implement the self-inspection method described above.

[0025] Preferably, a calibration substrate with specific reference lines or reference points pre-etched thereon is further included, so that the single-wafer rotary cleaning device can implement the self-test method described above.

[0026] On the basis of conforming to the common sense in this field, the above-mentioned preferred conditions can be arbitrarily combined to obtain the preferred embodiments of the present invention.

[0027] The beneficial effects of the present invention include: the real-time self-inspection method, the periodic self-inspection method and the single-chip rotary cleaning equipment can realize real-time detection and periodic detection of the rotating mechanism. Real-time self-inspection can avoid the occurrence of unexpected situations, which is beneficial to improving the safety of the single-chip rotary cleaning process. And by adjusting the detection accuracy, it is also possible to determine whether the substrate has deformation such as warping, so as to perform a certain screening of the substrate. Periodic self-inspection can timely detect the mechanical deviation caused by the rotating mechanism, which is beneficial to improving the stability of the single-chip rotary cleaning process. And the above-mentioned detection method does not require human intervention, and is fully automatically controlled by a computer, which is beneficial to improving detection efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The accompanying drawings, which constitute part of this application, are intended to provide a further understanding of the present invention and to explain the present invention, and are not intended to constitute an undue limitation of the present invention. In the accompanying drawings:

[0029] Figure 1 Schematic diagram of the real-time self-test method for the single-wafer rotary cleaning equipment of the present invention;

[0030] Figure 2 Another schematic diagram of the real-time self-test method for the single-wafer rotary cleaning device of the present invention;

[0031] Figure 3 Schematic diagram of the periodic self-test method of the single-wafer rotary cleaning equipment according to the present invention;

[0032] Figure 4 Another schematic diagram of the periodic self-test method of the single-wafer rotary cleaning equipment according to the present invention;

[0033] Figure 5 This is a partial structural diagram of the single-wafer rotary cleaning device of the present invention;

[0034] Figure 6A A top view of the partial structure of the substrate and the rotating stage when the substrate and the rotating stage are coaxial in the single-wafer rotating cleaning device of the present invention;

[0035] Figure 6B A top view of the partial structure of the substrate and the rotating stage when the substrate and the rotating stage are not coaxial in the single-wafer rotating cleaning device of the present invention;

[0036] Figure 7A is a first schematic diagram of a calibration substrate;

[0037] Figure 7B is a second schematic diagram of a calibration substrate;

[0038] Figure 7C This is the third schematic diagram of the calibration substrate.

[0039] The figure shows:

[0040] 1- Optical image sensor;

[0041] 2-substrate;

[0042] 3- Rotating stage;

[0043] 4- Rotation mechanism;

[0044] 5-calibration substrate;

[0045] 6- Etching pattern;

[0046] a-rotation centerline of the rotating stage;

[0047] β-Observation range of the optical image sensor;

[0048] D i - Tick value. DETAILED DESCRIPTION

[0049] The present invention will be described more clearly and completely below by way of examples and in conjunction with the accompanying drawings, but the present invention is not limited to the scope of the examples. The examples are merely illustrative. Based on the examples of the present invention, those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present invention, but such changes and modifications fall within the scope of protection of the present invention.

[0050] Example 1

[0051] like Figure 1 As shown, this embodiment is a real-time self-test method for a single-wafer rotary cleaning device. For ease of explanation, this embodiment adopts Figure 5 6. The real-time self-test method includes the following steps: S10: presetting the motion trajectory of the mechanical clamp and calibrating it so that the mechanical clamp can place the substrate 2 on the rotating stage 3 in the cleaning device and ensure that the center line of the substrate 2 coincides with the rotation center line of the rotating stage 3; S20: placing the substrate 2 to be cleaned on the rotating stage 3 by the mechanical clamp, and rotating the rotating stage 3 at a detection rate that is less than the preset cleaning rate; S30: observing the image of the edge of the substrate 2 during the rotation process by the optical image sensor 1, and recording the runout value D of the edge of the substrate 2 i ; S40: The edge of the substrate 2 jump value D i Compared with the preset value D0, the jump value D i When the value D0 is greater than the preset value, the rotating platform 3 stops running and the cleaning equipment sends a fault signal. i When the value is less than the preset value D0, normal cleaning is started. After the substrate 2 is cleaned, a new substrate 2 is replaced and steps S20-S40 are repeated.

[0052] like Figure 6A As shown, when the center line of the substrate 2 coincides with the rotation center line a of the rotating stage, the edge of the substrate 2 will not jump during the rotation of the rotating stage 3. Figure 6B As shown, when the center line of substrate 2 does not coincide with the rotation center line a of the rotating stage, the position of substrate 2 will be significantly different during the rotation of the rotating stage 3. When substrate 2 is located at the leftmost and rightmost sides of the rotating stage 3, the maximum distance between the edges of substrate 2 is the runout value D. i , the jump value D i Compared with the preset value D0, the jump value D i When the value is greater than the preset value D0, it indicates that a large deviation has occurred between the substrate 2 and the rotating stage 3. At this time, the rotating stage 3 stops running and the cleaning equipment sends a fault signal.

[0053] Example 2

[0054] like Figure 2 As shown, this embodiment is a real-time self-test method for a single-wafer rotary cleaning device. For ease of explanation, this embodiment adopts Figure 5 , Figures 6 and 7. The real-time self-test method includes the following steps: S10: presetting the motion trajectory of the mechanical clamp and calibrating it so that the mechanical clamp can place the substrate 2 on the rotating stage 3 in the cleaning device and ensure that the center line of the substrate 2 coincides with the rotation center line of the rotating stage 3; S20: placing the substrate 2 to be cleaned on the rotating stage 3 by the mechanical clamp, and the rotating stage 3 rotates at a detection rate that is less than the preset cleaning rate; S30: observing the image of the edge of the substrate 2 during the rotation process by the optical image sensor 1, and recording the runout value D of the edge of the substrate 2 i ; S40: The edge of the substrate 2 jump value D i Compared with the preset value D0, the jump value D i When the value D0 is greater than the preset value, the rotating platform 3 stops running and the cleaning equipment sends a fault signal. i When the value is less than the preset value D0, normal cleaning is started. After the substrate 2 is cleaned, a new substrate 2 is replaced and steps S20-S40 are repeated.

[0055] As a preferred embodiment, a calibration substrate 5 is provided, and the calibration substrate 5 is etched as follows Figure 7A or Figure 7B or Figure 7CThe reference lines or reference points shown are used to form the etching pattern 6, and the following steps are also included: after the cleaning device has been running for a period of time, or after a certain number of substrates 2 have been cleaned, step S50 is performed: the calibration substrate 5 is placed on the rotating stage 3 by the mechanical fixture, and the rotating stage 3 is rotated at a detection rate that is less than the preset cleaning rate, and the image P presented on the calibration substrate during the rotation process is observed by the optical image sensor 1. i .

[0056] As a preferred embodiment, the method includes step S61: analyzing the image P by an analysis mechanism. i , according to the image P i To determine whether it is necessary to stop the operation of the rotating stage 3 and send a fault signal. Figure 7A The calibration substrate 5 shown in the figure has an etched pattern 6 as a cross reference line. Under normal circumstances, the image P generated when the calibration substrate 5 rotates is i It should be a smaller circle, but when the center line of the calibration substrate 5 does not coincide with the rotation center line a of the rotating stage, the image P generated when the calibration substrate 5 rotates i It will become a larger circle or even a ring. i The shape of the calibration substrate 5 can be used to determine whether the calibration substrate 5 is concentric with the rotating stage 3, and further determine whether it is necessary to stop the operation of the rotating stage 3 and send a fault signal. If the deviation is within an acceptable range, the calibration substrate 5 is removed and step S20 is re-executed.

[0057] As another preferred embodiment, the following steps are included: between S10 and S20, there is a step S11: placing the calibration substrate 5 on the rotating stage 3 by the mechanical fixture, the rotating stage 3 rotates at a detection rate, the detection rate is less than the preset cleaning rate, and the optical image sensor 1 observes and records the image P0 presented on the calibration substrate 5 during the initial rotation process; after S50, there is also a step S62: the image P i Compare with P0, according to P i Compare with P0 to determine whether it is necessary to stop the operation of the rotating stage 3 and send a fault signal. Figure 7B The calibration base 5 shown in the figure is etched with three reference points. The image P0 obtained in step S11 should be three circular patterns with different radii. In an ideal state, P i It should be basically consistent with P0. However, when the center line of the calibration substrate 5 does not coincide with the rotation center line a of the rotating stage, the image P i The radius of the three circles in the image will be larger than the radius of the three circles in the image P0. iWhen the radius difference of the three circles in P0 exceeds a certain critical value, the rotation stage 3 is stopped and a fault signal is issued. If the deviation is within an acceptable range, the calibration substrate 5 is removed and step S20 is executed again.

[0058] As a preferred implementation, the preset value D0 is 0.2-0.5 mm.

[0059] As a preferred embodiment, the detection rate ranges from 20 to 200 rpm.

[0060] As a preferred embodiment, step S50 is performed after the cleaning equipment has been running for more than 200 hours.

[0061] As a preferred embodiment, step S50 is performed after the cleaning equipment has cleaned more than 500 substrates.

[0062] Example 3

[0063] like Figure 3 As shown, this embodiment is a periodic self-test method for a single-chip rotary cleaning device. For ease of explanation, this embodiment adopts Figure 5 , Figure 6, Figure 7. The periodic self-test method includes the following steps:

[0064] The motion trajectory of the mechanical fixture is preset and calibrated so that the mechanical fixture can place the substrate 2 on the rotating stage 3 in the cleaning equipment and ensure that the center line of the substrate 2 coincides with the rotation center line a of the rotating stage; the substrate 2 to be cleaned is placed on the rotating stage 3 by the mechanical fixture for cleaning; a calibration substrate 5 is set, and a specific reference line or reference point is etched on the calibration substrate 5; after the cleaning equipment has been running for a period of time, or after a certain number of substrates 2 have been cleaned, the calibration substrate 5 is placed on the rotating stage 3 by the mechanical fixture, and the rotating stage 3 rotates at a detection rate that is less than the preset cleaning rate, and the image P presented on the calibration substrate 5 during the rotation process is observed by the optical image sensor 1. i Analyze the image P by analyzing the image P i , according to the image P i To determine whether it is necessary to stop the operation of the rotating stage 3 and send a fault signal. Figure 7A The calibration substrate 5 shown in the figure has an etched pattern 6 as a cross reference line. Under normal circumstances, the image P generated when the calibration substrate 5 rotates is i It should be a smaller circle, but when the center line of the calibration substrate 5 does not coincide with the rotation center line a of the rotating stage, the image P generated when the calibration substrate 5 rotates i It will become a larger circle or even a ring. iThe shape of the calibration substrate 5 can be used to determine whether the calibration substrate 5 is concentric with the rotating stage 3, and further determine whether it is necessary to stop the operation of the rotating stage 3 and send a fault signal. If the deviation is within an acceptable range, the calibration substrate 5 is removed and the cleaning work is continued normally.

[0065] Example 4

[0066] like Figure 4 As shown, this embodiment is a periodic self-test method for a single-chip rotary cleaning device. For ease of explanation, this embodiment adopts Figure 5 , Figure 6, Figure 7. The periodic self-test method includes the following steps:

[0067] The motion trajectory of the mechanical fixture is preset and calibrated so that the mechanical fixture can place the substrate 2 on the rotating stage 3 in the cleaning equipment and ensure that the center line of the substrate 2 coincides with the rotation center line a of the rotating stage; a calibration substrate 5 is set, and a specific reference line or reference point is etched on the calibration substrate 5; the calibration substrate 5 is placed on the rotating stage 3 by the mechanical fixture, and the rotating stage 3 rotates at a detection rate, which is less than the preset cleaning rate, and the image P0 presented on the calibration substrate 5 during the initial rotation process is observed and recorded by the optical image sensor 1; the substrate 2 to be cleaned is placed on the rotating stage 3 by the mechanical fixture to clean the substrate 2; after the cleaning equipment has been running for a period of time, or after a certain number of substrates 2 have been cleaned, the calibration substrate 5 is placed on the rotating stage 3 by the mechanical fixture, and the rotating stage 3 rotates at a detection rate, which is less than the preset cleaning rate, and the image P presented on the calibration substrate 5 during the rotation process is observed by the optical image sensor 1. i ; Through the analysis mechanism, the image P i Compare with P0, according to P i Compare with P0 to determine whether it is necessary to stop the operation of the rotating stage 3 and send a fault signal. Figure 7B The calibration base 5 shown in the figure is etched with three reference points. The image P0 obtained in step S11 should be three circular patterns with different radii. In an ideal state, P i It should be basically consistent with P0. However, when the center line of the calibration substrate 5 does not coincide with the rotation center line a of the rotating stage, the image P i The radius of the three circles in the image will be larger than the radius of the three circles in the image P0. i When the radius difference of the three circles in P0 exceeds a certain critical value, the rotation stage 3 is stopped and a fault signal is issued. If the deviation is within an acceptable range, the calibration substrate 5 is removed and the cleaning process is continued normally.

[0068] Example 5

[0069] like Figure 5 As shown in Figures 6 and 7, this embodiment is a single-wafer rotary cleaning device that can perform real-time or periodic self-tests. The cleaning device includes a cleaning device, a mechanical fixture, a rotating mechanism 4, and an optical image sensor 1. β is the observation range of the optical image sensor. The rotating mechanism 4 has a rotating stage 3 and also includes an analysis mechanism. When using this device, the motion trajectory of the mechanical fixture is preset and calibrated so that the mechanical fixture can place the substrate 2 on the rotating stage 3 in the cleaning device and ensure that the center line of the substrate 2 coincides with the rotation center line a of the rotating stage. The rotating stage 3 rotates at a detection rate that is less than the preset cleaning rate. The optical image sensor 1 observes the image of the edge of the substrate 2 during rotation and records the edge runout value D of the substrate 2. i ; The substrate edge runout value D i Compared with the preset value D0, the jump value D i When the value D0 is greater than the preset value, the rotating platform 3 stops running and the cleaning equipment sends a fault signal. i When the value is less than the preset value D0, normal cleaning is started. After the substrate 2 is cleaned, a new substrate 2 is replaced and a new round of detection and cleaning steps is continued.

[0070] As a preferred embodiment, it also includes Figure 7A or Figure 7B or Figure 7C The calibration substrate 5 is shown as being pre-etched with specific reference lines or reference points. After the cleaning device has been running for a period of time, or after a certain number of substrates 2 have been cleaned, the calibration substrate 5 is placed on the rotating stage 3 by the mechanical fixture. The rotating stage 3 rotates at a detection rate that is less than the preset cleaning rate. The image P displayed on the calibration substrate during the rotation is observed by the optical image sensor 1. i .

[0071] As a preferred embodiment, the image P is analyzed by an analysis mechanism. i , according to the image P i To determine whether it is necessary to stop the operation of the rotating stage 3 and send a fault signal. Figure 7A The calibration substrate 5 shown in the figure has a cross reference line etched on it. Under normal circumstances, the image P generated when the calibration substrate 5 rotates is i It should be a smaller circle, but when the center line of the calibration substrate 5 does not coincide with the rotation center line a of the rotating stage, the image P generated when the calibration substrate 5 rotates i It will become a larger circle or even a ring. iThe shape of the calibration substrate 51 can be used to determine whether the calibration substrate 51 is concentric with the rotating stage 3, and further determine whether it is necessary to stop the operation of the rotating stage 3 and send a fault signal. If the deviation is within an acceptable range, the calibration substrate 5 is removed and normal cleaning work is restarted.

[0072] As another preferred embodiment, after the motion trajectory of the mechanical fixture is preset and calibrated in the initial stage, the calibration substrate 5 is placed on the rotating stage 3 by the mechanical fixture, and the rotating stage 3 rotates at a detection rate that is less than the preset cleaning rate. The optical image sensor 1 observes and records the image P0 presented on the calibration substrate during the initial rotation process; the image P i Compare with P0, according to P i Compare with P0 to determine whether it is necessary to stop the operation of the rotating stage 3 and send a fault signal. Figure 7B The calibration base 5 shown in the figure has three reference points etched on the calibration substrate 5. The image P0 should be three circular patterns with different radii. In an ideal state, P i It should be basically consistent with P0. However, when the center line of the calibration substrate 5 does not coincide with the rotation center line a of the rotating stage, the image P i The radius of the three circles in the image will be larger than the radius of the three circles in the image P0. i When the radius difference of the three circles in P0 exceeds a certain critical value, the rotation stage 3 is stopped and a fault signal is issued. If the deviation is within an acceptable range, the calibration substrate 5 is removed and normal cleaning work is restarted.

[0073] As a preferred implementation, the preset value D0 is 0.2-0.5 mm.

[0074] As a preferred embodiment, the detection rate ranges from 20 to 200 rpm.

[0075] As a preferred embodiment, after the cleaning equipment has been running for more than 200 hours, the calibration substrate 5 is placed on the rotating stage 3 by the mechanical fixture for periodic inspection.

[0076] As a preferred embodiment, after the cleaning device has cleaned more than 500 substrates, the calibration substrate 5 is placed on the rotating stage 3 by the mechanical fixture for periodic inspection.

Claims

1. A real-time self-test method for a single-wafer rotary cleaning device, characterized in that: The following steps are involved: S10: Preset the motion trajectory of the mechanical fixture and calibrate it so that the mechanical fixture can place the substrate on the rotating stage in the cleaning equipment and ensure that the center line of the substrate coincides with the rotation center line of the rotating stage; S20: placing the substrate to be cleaned on the rotating stage by the mechanical fixture, and rotating the rotating stage at a detection rate; S30: Observe the image of the substrate edge during the rotation process through the optical image sensor and record the runout value D of the substrate edge i The so-called runout value Di refers to: when the center line of the substrate does not coincide with the rotation center line of the rotating stage, when the rotating stage is rotating and the substrate is located at the leftmost and rightmost sides of the rotating stage respectively, the maximum distance between the edges of the substrate is the runout value Di; S40: The runout value D of the substrate edge i Compared with the preset value D0, the jump value D i When the value D0 is greater than the preset value, the rotating stage stops running and the cleaning equipment sends a fault signal. i When the value is less than the preset value D0, the rotary stage rotates at a preset cleaning rate and starts the cleaning work normally. After the substrate is cleaned, a new substrate is replaced and steps S20-S40 are repeated.

2. The real-time self-test method for a single-wafer rotary cleaning device according to claim 1, characterized in that: A calibration substrate is provided, and a reference line or a reference point is etched on the calibration substrate, and the method further includes the following steps: After the cleaning device has been running for a period of time, or after a certain number of substrates have been cleaned, step S50 is performed: the calibration substrate is placed on the rotating stage by the mechanical fixture, the rotating stage rotates at the detection rate, and the image P of the reference line or reference point etched on the calibration substrate during the rotation is observed by the optical image sensor. i .

3. The real-time self-test method for a single-wafer rotary cleaning device according to claim 2, wherein: The following steps are also included: S61: Analyze the image P by an analysis mechanism i , according to the image P i To determine whether it is necessary to stop the operation of the rotary stage and send a fault signal, if it is not necessary to stop the operation of the rotary stage, remove the calibration substrate and re-execute step S20.

4. The real-time self-test method for a single-wafer rotary cleaning device according to claim 2, wherein: The following steps are also included: Between S10 and S20, there is a step S11: placing the calibration substrate on the rotating stage by the mechanical fixture, rotating the rotating stage at a detection rate, and observing and recording the image P0 presented by the reference line or reference point etched on the calibration substrate during the initial rotation process by the optical image sensor; After S50, the process also includes step S62: i Compare with P0, according to P i The calibration substrate is compared with P0 to determine whether it is necessary to stop the operation of the rotary stage and issue a fault signal. If it is not necessary to stop the operation of the rotary stage, the calibration substrate is removed and step S20 is executed again.

5. The real-time self-test method for a single-wafer rotary cleaning device according to any one of claims 1 to 4, characterized in that: The preset value D0 is 0.2-0.5 mm.

6. The real-time self-test method for a single-wafer rotary cleaning device according to any one of claims 1 to 4, characterized in that: The detection rate ranges from 20 to 200 rpm.

7. The real-time self-test method for a single-wafer rotary cleaning device according to any one of claims 2 to 4, characterized in that: After the cleaning equipment has been running for more than 200 hours, step S50 is performed.

8. The real-time self-test method for a single-wafer rotary cleaning device according to any one of claims 2 to 4, characterized in that: After the cleaning equipment has cleaned more than 500 substrates, step S50 is performed.

9. A periodic self-test method for a single-wafer rotary cleaning device, characterized in that: The following steps are involved: Preset the motion trajectory of the mechanical fixture and calibrate it so that the mechanical fixture can place the substrate on the rotating stage in the cleaning equipment and ensure that the center line of the substrate coincides with the rotation center line of the rotating stage; Placing the substrate to be cleaned on the rotating stage by the mechanical fixture to clean the substrate; A calibration substrate is provided, and a reference line or a reference point is etched on the calibration substrate; After the cleaning device has been running for a period of time, or after a certain number of substrates have been cleaned, the calibration substrate is placed on the rotating stage by the mechanical fixture, and the rotating stage rotates at the detection rate. The image P of the reference line or reference point etched on the calibration substrate during the rotation is observed by the optical image sensor. i ; The image P is analyzed by the analysis means i , according to the image P i To determine whether it is necessary to stop the rotation stage and send a fault signal. If it is not necessary to stop the rotation stage, remove the calibration substrate and continue to perform the cleaning work normally.

10. A periodic self-test method for a single-wafer rotary cleaning device, characterized in that: The following steps are involved: Preset the motion trajectory of the mechanical fixture and calibrate it so that the mechanical fixture can place the substrate on the rotating stage in the cleaning equipment and ensure that the center line of the substrate coincides with the rotation center line of the rotating stage; A calibration substrate is provided, and a reference line or a reference point is etched on the calibration substrate; The calibration substrate is placed on a rotating stage by the mechanical fixture, and the rotating stage rotates at a detection rate. The image P0 presented by the reference line or reference point etched on the calibration substrate during the initial rotation process is observed and recorded by the optical image sensor; Placing the substrate to be cleaned on the rotating stage by the mechanical fixture to clean the substrate; After the cleaning device has been running for a period of time, or after a certain number of substrates have been cleaned, the calibration substrate is placed on the rotating stage by the mechanical fixture, and the rotating stage rotates at the detection rate. The image P of the reference line or reference point etched on the calibration substrate during the rotation is observed by the optical image sensor. i ; The image P is analyzed by the i Compare with P0, according to P i Compare with P0 to determine whether it is necessary to stop the rotation stage and send a fault signal. If it is not necessary to stop the rotation stage, remove the calibration substrate and continue the cleaning work normally.

11. A single-wafer rotary cleaning device, characterized in that: It includes a cleaning device, a mechanical clamp, a rotating mechanism, and an optical image sensor. The rotating mechanism is provided with a rotating stage. It also includes an analysis mechanism, so that the single-wafer rotating cleaning equipment is used to implement the method described in any one of claims 1 to 4 and claims 9 to 10.

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