RDT method, device, terminal device and storage medium of storage device

Abstract

The present invention discloses a memory RDT method, device, terminal device and computer storage medium. The memory RDT method is applied to the terminal device, and the method includes: detecting whether the memory configured by the current terminal device has an RDT record, wherein the RDT record is a record of the first execution of the RDT operation on the memory; if it is detected that the memory does not have the RDT record, performing the first RDT operation on the memory based on the background operation mode; pausing the first RDT operation according to a preset operation instruction, and responding to the execution of the operation instruction. The present invention does not need to consume a lot of time and production costs by executing RDT on the memory like the traditional memory mass production process, and the terminal device will not be unable to respond to the front-end operation instruction because the memory fails to pass the RDT detection, thereby ensuring the production quality of the memory and improving the overall mass production efficiency of the memory.

Description

Technical Field

[0001] The present invention relates to the field of memory technology, and in particular to a RDT method, device, terminal equipment and computer storage medium of a memory. Background Art

[0002] At present, any type of memory product needs to perform RDT (Reliability Demonstration Testing) during mass production to ensure the quality of particles in solid-state storage media, and based on this RDT operation, bad physical blocks or data pages in the memory can be screened out. However, as the capacity of current memory products is getting larger and larger, the process of performing RDT operations on the memory takes a lot of time, which seriously reduces the efficiency of memory mass production.

[0003] Based on this, some companies currently omit the step of performing RDT operation on the memory during mass production in order to improve the efficiency of memory mass production, and only use the original bad block record table to identify bad physical blocks in the memory. In this way, due to the lack of RDT operation, the memory with relatively low quality is often found to have bad blocks during the process of being packaged into the terminal for application and cannot be used, which leads to customer returns and even complaints.

[0004] In summary, how to improve the mass production efficiency of memory while performing effective RDT operations on the memory to ensure the basic quality of the memory has become a technical problem that needs to be solved urgently in the industry. Summary of the invention

[0005] The main purpose of the present invention is to provide an RDT method, apparatus, terminal device and computer storage medium for a memory, aiming to solve the existing technical problem of how to perform effective RDT operations on the memory while improving the mass production efficiency of the memory under the premise of ensuring the basic quality of the memory.

[0006] To achieve the above object, the present invention provides a memory RDT method, the memory RDT method is applied to a terminal device, and the memory RDT method includes:

[0007] Detecting whether a memory configured in the current terminal device has an RDT record, wherein the RDT record is a record of performing an RDT operation for the memory for the first time;

[0008] If it is detected that the memory does not have the RDT record, performing the first RDT operation on the memory based on the background operation mode;

[0009] The first RDT operation is suspended according to a preset operation instruction, and the operation instruction is executed in response.

[0010] Further, after the step of pausing the first RDT operation according to the preset operation instruction and responding to and executing the operation instruction, the method further includes:

[0011] Detecting whether the operation instruction has been executed;

[0012] If yes, continue to restart the first RDT operation based on the background running mode.

[0013] Furthermore, the method further comprises:

[0014] When the first RDT operation is performed on the memory, an RDT record of the memory is synchronously generated.

[0015] Further, the operation instruction includes: a data storage instruction, and the step of responding to and executing the operation instruction includes:

[0016] When the data storage instruction is obtained, detecting a detected physical block of the memory, wherein the detected physical block is a physical block in the memory that has undergone the first RDT operation;

[0017] The data storage instruction is executed based on the detected physical block response.

[0018] Further, the step of executing the data storage instruction based on the detected physical block response comprises:

[0019] Detecting the data to be stored pointed to by the data storage instruction;

[0020] The data storage instruction is executed according to the data amount of the data to be stored and the detected physical block response to write the data to be stored into the memory.

[0021] Further, the step of executing the data storage instruction to write the data to be stored into the memory according to the data amount of the data to be stored and the detected physical block response includes:

[0022] Determining whether the detected physical block can store and write the data to be stored according to the data amount;

[0023] If it is determined that the detected physical block can store and write the data to be stored, the memory is controlled to write the data to be stored into the detected physical block for storage.

[0024] Further, after the step of determining whether the detected physical block can store and write the data to be stored according to the data amount, the method further includes:

[0025] If it is determined that the detected physical block cannot store or write the data to be stored, determining a target physical block to be used from the physical blocks of the memory that do not perform the RDT operation;

[0026] After performing the RDT operation on the target physical block to determine that the RDT is successful, the memory is controlled to write the data to be stored to the detected physical block and / or the target physical block for storage.

[0027] In addition, the RDT device of the memory is applied to a terminal device, and the RDT device of the memory includes:

[0028] A detection module, used to detect whether there is an RDT record in the memory configured by the current terminal device, wherein the RDT record is a record of performing an RDT operation for the memory for the first time;

[0029] A background RDT module, configured to perform a first RDT operation on the storage based on a background operation mode if it is detected that the storage does not have the RDT record;

[0030] The instruction response module is used to suspend the first RDT operation according to a preset operation instruction, and respond to execute the operation instruction.

[0031] Each functional module of the RDT device of the memory of the present invention implements the steps of the RDT method of the memory as described above during operation.

[0032] In addition, to achieve the above-mentioned purpose, the present invention also provides a terminal device, which includes: a memory, a processor, and an RDT program of the memory stored on the memory and executable on the processor, and when the RDT program of the memory is executed by the processor, the steps of the RDT method of the memory as described above are implemented.

[0033] In addition, to achieve the above-mentioned purpose, the present invention also provides a computer storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps of the RDT method of the memory as described above are implemented.

[0034] The present invention proposes an RDT method, apparatus, terminal device and computer storage medium for a memory, wherein the RDT method for the memory is applied to a terminal device, and the RDT method for the memory includes: detecting whether an RDT record exists in the memory configured by the current terminal device, wherein the RDT record is a record of the first execution of an RDT operation on the memory; if it is detected that the RDT record does not exist in the memory, performing the first RDT operation on the memory based on a background operation mode; pausing the first RDT operation according to a preset operation instruction, and executing the operation instruction in response.

[0035] The present invention detects, after packaging the mass-produced memory into the terminal device, whether the memory packaged and configured by the current terminal device stores an RDT record of the first RDT operation performed on the memory during power-on operation, so that when it is detected that the RDT record does not exist in the memory (that is, the memory has not performed an RDT operation during mass production), the current terminal device performs the first RDT operation on the memory based on the background operation mode. In addition, if the current terminal device obtains a preset operation instruction, the current terminal device immediately suspends the first RDT operation being performed on the memory according to the operation instruction, and responds to execute the operation instruction first.

[0036] Compared with the traditional method of omitting the step of performing RDT operation on the memory during mass production, and only using the original bad block record table to identify the bad physical blocks in the memory and then directly encapsulating and configuring the memory to the terminal device, the present invention performs RDT operation on the memory based on the background operation mode when the terminal device detects that the encapsulated and configured memory has not performed RDT operation, and suspends the RDT operation to respond to and execute the operation instruction first when the operation instruction is obtained. In this way, the RDT operation is directly performed by the terminal device based on the background operation mode, which does not need to consume a lot of time and production costs like the traditional memory mass production process to perform RDT on the memory, and the terminal device will not be unable to respond to the front-end operation instruction because the memory has not detected bad blocks through RDT, that is, the production quality of the memory is guaranteed and the overall mass production efficiency of the memory is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Figure 1 It is a schematic diagram of the structure of the hardware operation of the terminal device involved in the embodiment of the present invention;

[0038] Figure 2 It is a flow chart of an embodiment of an RDT method of a memory of the present invention;

[0039] Figure 3 It is a schematic diagram of the structural relationship of an RDT system of a memory of the present invention.

[0040] The purpose, features and advantages of the present invention will be further described with reference to the accompanying drawings in conjunction with the embodiments. DETAILED DESCRIPTION

[0041] It should be understood that the specific embodiments described herein are only used to explain the present invention, and are not used to limit the present invention.

[0042] like Figure 1 As shown, Figure 1 It is a structural diagram of the hardware operating environment of the terminal device involved in the embodiment of the present invention.

[0043] It should be noted that Figure 1 The terminal device of the embodiment of the present invention can be a device for executing the RDT method of the memory provided by the present invention for a memory based on nand flash as a storage medium, and the terminal device can specifically be a mobile terminal, a data storage control terminal, a PC or a portable computer.

[0044] like Figure 1 As shown, the terminal device may include: a processor 1001, such as a CPU, a network interface 1004, a user interface 1003, a memory 1005, and a communication bus 1002. Among them, the communication bus 1002 is used to realize the connection and communication between these components. The user interface 1003 may include a display screen (Display), an input unit such as a keyboard (Keyboard), and the optional user interface 1003 may also include a standard wired interface and a wireless interface. The network interface 1004 may optionally include a standard wired interface and a wireless interface (such as a WI-FI interface). The memory 1005 may be a non-volatile memory (such as a Flash memory), a high-speed RAM memory, or a stable memory (non-volatile memory), such as a disk memory. The memory 1005 may also be a storage device independent of the aforementioned processor 1001.

[0045] Those skilled in the art will understand that Figure 1 The terminal device structure shown in the figure does not constitute a limitation on the terminal device, and may include more or fewer components than shown in the figure, or combine certain components, or arrange the components differently.

[0046] like Figure 1 As shown, the memory 1005 as a computer storage medium may include an operating system, a network communication module, a user interface module, and an RDT program in the memory. The operating system is a program for managing and controlling the hardware and software resources of the sample terminal device, and supports the operation of the RDT program in the memory and other software or programs.

[0047] exist Figure 1 In the terminal device shown, the user interface 1003 is mainly used to communicate data with each terminal; the network interface 1004 is mainly used to connect to the background server and communicate data with the background server; and the processor 1001 can be used to call the RDT program of the memory stored in the memory 1005 and perform the following operations:

[0048] Detecting whether a memory configured in the current terminal device has an RDT record, wherein the RDT record is a record of performing an RDT operation for the memory for the first time;

[0049] If it is detected that the memory does not have the RDT record, performing the first RDT operation on the memory based on the background operation mode;

[0050] The first RDT operation is suspended according to a preset operation instruction, and the operation instruction is executed in response.

[0051] Further, the processor 1001 may call the RDT program of the memory stored in the memory 1005, and after executing the step of pausing the first RDT operation according to the preset running instruction and responding to the step of executing the running instruction, further perform the following operations:

[0052] Detecting whether the operation instruction has been executed;

[0053] If yes, continue to restart the first RDT operation based on the background running mode.

[0054] Further, the processor 1001 may call the RDT program of the memory stored in the memory 1005, and further perform the following operations:

[0055] When the first RDT operation is performed on the memory, an RDT record of the memory is synchronously generated.

[0056] Furthermore, the operation instruction includes: a data storage instruction, the processor 1001 can call the RDT program of the memory stored in the memory 1005, and also perform the following operations:

[0057] When the data storage instruction is obtained, detecting a detected physical block of the memory, wherein the detected physical block is a physical block in the memory that has undergone the first RDT operation;

[0058] The data storage instruction is executed based on the detected physical block response.

[0059] Further, the processor 1001 may call the RDT program of the memory stored in the memory 1005, and further perform the following operations:

[0060] Detecting the data to be stored pointed to by the data storage instruction;

[0061] The data storage instruction is executed according to the data amount of the data to be stored and the detected physical block response to write the data to be stored into the memory.

[0062] Further, the processor 1001 may call the RDT program of the memory stored in the memory 1005, and further perform the following operations:

[0063] Determining whether the detected physical block can store and write the data to be stored according to the data amount;

[0064] If it is determined that the detected physical block can store and write the data to be stored, the memory is controlled to write the data to be stored into the detected physical block for storage.

[0065] Further, the processor 1001 may call the RDT program of the memory stored in the memory 1005, and after executing the step of determining whether the detected physical block can store and write the data to be stored according to the data amount, further perform the following operations:

[0066] If it is determined that the detected physical block cannot store or write the data to be stored, determining a target physical block to be used from the physical blocks of the memory that do not perform the RDT operation;

[0067] After performing the RDT operation on the target physical block to determine that the RDT is successful, the memory is controlled to write the data to be stored to the detected physical block and / or the target physical block for storage.

[0068] Based on the above structure, various embodiments of the RDT method of the memory of the present invention are proposed.

[0069] It should be noted that in this embodiment, since any type of memory product currently needs to perform RDT (Reliability Demonstration Testing) operations during mass production to ensure the quality of particles in the solid-state storage medium, and based on the RDT operation, bad physical blocks or data pages in the memory can be screened out. However, as the capacity of current memory products is getting larger and larger, the process of performing RDT operations on the memory takes a lot of time, which seriously reduces the efficiency of memory mass production.

[0070] Based on this, some companies currently omit the step of performing RDT operation on the memory during mass production in order to improve the efficiency of memory mass production, and only use the original bad block record table to identify bad physical blocks in the memory. In this way, due to the lack of RDT operation, the memory with relatively low quality is often found to have bad blocks during the process of being packaged into the terminal for application and cannot be used, which leads to customer returns and even complaints.

[0071] In response to the above phenomenon, the present application provides an RDT method for a memory. After packaging the mass-produced memory into a terminal device, the terminal device detects, during the power-on operation process, whether the memory packaged and configured by the current terminal device stores an RDT record of the first RDT operation performed on the memory. Thus, when it is detected that the RDT record does not exist in the memory (that is, the memory has not performed an RDT operation during the mass production process), the current terminal device performs the first RDT operation on the memory based on the background operation mode. In addition, if the current terminal device obtains a preset operation instruction, the current terminal device immediately suspends the first RDT operation being performed on the memory according to the operation instruction, and responds to execute the operation instruction first.

[0072] Compared with the traditional method of omitting the step of performing RDT operation on the memory during mass production, and only using the original bad block record table to identify the bad physical blocks in the memory and then directly encapsulating and configuring the memory to the terminal device, the present invention performs RDT operation on the memory based on the background operation mode when the terminal device detects that the encapsulated and configured memory has not performed RDT operation, and suspends the RDT operation to respond to and execute the operation instruction first when the operation instruction is obtained. In this way, the RDT operation is directly performed by the terminal device based on the background operation mode, which does not need to consume a lot of time and production costs like the traditional memory mass production process to perform RDT on the memory, and the terminal device will not be unable to respond to the front-end operation instruction because the memory has not detected bad blocks through RDT, that is, the production quality of the memory is guaranteed and the overall mass production efficiency of the memory is improved.

[0073] Please refer to Figure 2 , Figure 2 FIG. 1 is a flow chart of a first embodiment of an RDT method for a memory according to the present invention.

[0074] The embodiment of the present invention provides an embodiment of the RDT method of the memory, and the RDT method of the memory of the embodiment of the present invention is applied to the above-mentioned terminal device to perform RDT operation on the memory based on NAND flash as the storage medium. It should be noted that although the logical order is shown in the flowchart, in some cases, the steps shown or described can be performed in a different order than here.

[0075] The RDT method of the memory in this embodiment includes:

[0076] Step S100, detecting whether a memory configured in the current terminal device has an RDT record, wherein the RDT record is a record of performing an RDT operation on the memory for the first time;

[0077] It should be noted that, in this embodiment, the memory configured in the current terminal device is a memory that has not been subjected to RDT operations for all physical blocks, after only necessary algorithm tables and some spare blocks have been scanned by mass production tools in advance during mass production. The necessary algorithm tables and some spare blocks can specifically be a table containing one or more memory operation algorithms that is recorded in advance by the design and production manufacturer of the memory based on the basic operation requirements of the memory itself, and one or more physical blocks that must be guaranteed to be normal in order for the memory to achieve basic operation, which are pre-marked by the production and design manufacturer.

[0078] When the terminal device is powered on for the first time, it detects whether there is an RDT record of a previously executed RDT operation in the currently configured memory, so as to determine whether the memory has already performed the first RDT operation.

[0079] It should be noted that, in this embodiment, whether the memory configured by the current terminal device has performed RDT operations on all physical blocks based on the mass production tool during the mass production process, or has not performed the RDT operation during the mass production process, but after being packaged and configured in the terminal device, the terminal device performs RDT operations on all physical blocks of the memory, the mass production tool or the terminal device will generate an RDT record for identifying that the memory has performed the first RDT operation at the same time as the RDT operation starts to be performed on all physical blocks. In this way, the terminal device can determine whether the memory has performed the first RDT operation by detecting whether the RDT record exists in the memory when it is powered on for the first time (the RDT record can be directly stored on the memory).

[0080] Step S200, if it is detected that the memory does not have the RDT record, performing the first RDT operation on the memory based on the background operation mode;

[0081] If the terminal device detects that there is no RDT record for the configured memory when it is powered on for the first time, that is, it is determined that the memory has not performed RDT operations on all physical blocks before, the terminal device immediately starts the running process in the background based on the background running mode and starts the first RDT operation on all physical blocks of the memory.

[0082] Furthermore, in a feasible embodiment, the RDT method of the memory of the present invention further includes:

[0083] Step S400: When the first RDT operation is performed on the memory, an RDT record of the memory is synchronously generated.

[0084] When the terminal device starts to perform the first RDT operation on all physical blocks of the memory, it synchronously generates an RDT record for marking that the memory has performed the first RDT operation, and stores the RDT record on the memory. In this way, when the terminal device is powered on again due to a subsequent system reset or other operation, it can directly detect that the configured memory already has an RDT record, and thus determine that it is not necessary to repeat the RDT operation on the memory, further improving the intelligence of the memory in performing the RDT operation.

[0085] Step S300: suspending the first RDT operation according to a preset operation instruction, and executing the operation instruction in response.

[0086] It should be noted that, in this embodiment, the preset operation instruction is an operation instruction generated by the terminal device based on the front-end operation needs during the first RDT operation on all physical blocks of the memory.

[0087] When the terminal device is performing RDT operations on all physical blocks of the memory based on the background operation mode, if it obtains the operation instruction generated by the front end, the terminal device will suspend the RDT operation on all physical blocks of the memory in the background when obtaining the operation instruction, and respond to and execute the operation instruction first to ensure the normal operation of the terminal device as a whole.

[0088] Furthermore, in a feasible embodiment, after the above step S300, the RDT method of the memory of the present invention may further include:

[0089] Step S500, detecting whether the operation instruction has been executed;

[0090] Step S600: If yes, continue to restart the first RDT operation based on the background running mode.

[0091] When the terminal device suspends the RDT operation on all physical blocks of the memory in the background and responds to the execution of the acquired operation instruction generated by the front end, it continuously detects the response execution process of the operation instruction, that is, detects whether the operation instruction has been executed at the current moment. Therefore, once the terminal device detects that the operation instruction has been executed at the current moment, the terminal device immediately restarts the first RDT operation on all physical blocks of the memory based on starting the operation process in the background, and so on, until the RDT operation is successfully completed.

[0092] In this embodiment, the RDT method of the memory of the present invention is to detect whether there is an RDT record of the RDT operation previously performed in the currently configured memory when the terminal device is powered on for the first time after the mass-produced memory is packaged into the terminal device, so as to determine whether the memory has performed the first RDT operation; if the terminal device detects that there is no RDT record in the configured memory when it is powered on for the first time, that is, it is determined that the memory has not performed the RDT operation on all physical blocks before, and thus, the terminal device immediately starts the running process in the background based on the background running mode to start the first RDT operation on all physical blocks of the memory; in the process of performing the RDT operation on all physical blocks of the memory based on the background running mode, if the terminal device obtains the running instruction generated by the front end, the terminal device will suspend the RDT operation on all physical blocks of the memory in the background when the running instruction is obtained, so as to respond to and execute the running instruction first to ensure the normal operation of the terminal device as a whole.

[0093] In addition, when the terminal device suspends the RDT operation on all physical blocks of the memory in the background and responds to the execution of the acquired operation instruction generated by the front end, it continuously detects the response execution process of the operation instruction, that is, detects whether the operation instruction has been executed at the current moment. Therefore, once the terminal device detects that the operation instruction has been executed at the current moment, the terminal device immediately restarts the first RDT operation on all physical blocks of the memory based on starting the operation process in the background, and so on, until the RDT operation is successfully completed.

[0094] Compared with the traditional method of omitting the step of performing RDT operation on the memory during mass production, and only using the original bad block record table to identify the bad physical blocks in the memory and then directly encapsulating and configuring the memory to the terminal device, the present invention performs RDT operation on the memory based on the background operation mode when the terminal device detects that the encapsulated and configured memory has not performed RDT operation, and suspends the RDT operation to respond to and execute the operation instruction first when the operation instruction is obtained. In this way, the RDT operation is directly performed by the terminal device based on the background operation mode, which does not need to consume a lot of time and production costs like the traditional memory mass production process to perform RDT on the memory, and the terminal device will not be unable to respond to the front-end operation instruction because the memory has not detected bad blocks through RDT, that is, the production quality of the memory is guaranteed and the overall mass production efficiency of the memory is improved.

[0095] Further, based on the first embodiment of the RDT method of the memory of the present invention, a second embodiment of the RDT method of the memory of the present invention is proposed. The main difference between the second embodiment of the RDT method of the memory of the present invention and the first embodiment is that, in this embodiment, the operation instruction in the above step S300 includes: a data storage instruction, and in this step S300, the step of "response to execute the operation instruction" may include:

[0096] Step S301, when the data storage instruction is obtained, detecting a detected physical block of the memory, wherein the detected physical block is a physical block in the memory that has undergone the first RDT operation;

[0097] It should be noted that, in this embodiment, the detected physical block is a physical block in the memory that has been scanned through the first RDT operation. During the process of performing the first RDT operation on all the physical blocks of the memory, the terminal device records each physical block as a detected physical block after scanning and detecting the physical block.

[0098] After the terminal device obtains the operation instruction generated by the front end, if it detects that the operation instruction is a data storage instruction instructing the memory to store or write data, the terminal device detects and determines the detected physical blocks that have been scanned by the memory after the first RDT operation at the current moment.

[0099] Step S302: executing the data storage instruction based on the detected physical block response.

[0100] After the terminal device detects and determines that the memory has scanned the detected physical block after the first RDT operation at the current moment, it immediately controls the memory to use the detected physical block to respond to the acquired data storage instruction, so as to write and store the data to be stored pointed to by the data storage instruction on the detected physical block.

[0101] Furthermore, in a feasible embodiment, the above step S302 may include:

[0102] Step S3021, detecting the data to be stored pointed to by the data storage instruction;

[0103] Step S3022: Execute the data storage instruction according to the amount of the data to be stored and the detected physical block response to write the data to be stored into the memory.

[0104] After detecting and determining that the memory has scanned the detected physical block after the first RDT operation at the current moment, the terminal device further detects the data to be stored in the memory pointed to by the acquired data storage instruction, and then, based on the detected data size of the data to be stored and the detected physical block determined, responds to execute the data storage instruction to control the memory to write and store the data to be stored in the detected physical block and / or other physical blocks in the memory.

[0105] Furthermore, in a feasible embodiment, the above step S3022 may also include:

[0106] Step A, determining whether the detected physical block can store and write the data to be stored according to the data amount;

[0107] When the terminal device controls the memory to write and store the data to be stored pointed to by the acquired data storage instruction to the detected physical block, it first detects and determines whether the detected physical block can store the data to be stored based on the data volume of the data to be stored. That is, the terminal device first determines the total available storage space of the detected physical block on the memory, and then compares whether the size of the total available storage space is greater than or equal to the data volume of the data to be stored. Thus, when it is compared that the size of the total available storage space is greater than or equal to the data volume, it is determined that the detected physical block can store the data to be stored, otherwise, it is determined that the detected physical block cannot store the data to be stored.

[0108] Step B: If it is determined that the detected physical block can store and write the data to be stored, control the memory to write the data to be stored into the detected physical block for storage.

[0109] When the terminal device detects and determines that the detected physical block in the memory is capable of storing the data to be stored based on the amount of the data to be stored, the terminal device immediately controls the memory to programmatically store the data to be stored on the detected physical block.

[0110] It should be noted that in this embodiment, based on different design requirements of actual applications, in any other feasible implementation methods, the terminal device can of course also use other data writing methods other than the control memory listed here to store and write the data to be stored through programming, to control the memory to write the data to be stored. The RDT method of the memory of the present invention does not limit the specific method and process of the memory to store and write the data to be stored.

[0111] Further, in a feasible embodiment, in the above step A, after determining whether the detected physical block can store and write the data to be stored according to the data amount, the RDT method of the memory of the present invention may also include:

[0112] Step C, if it is determined that the detected physical block cannot store or write the data to be stored, determining a target physical block to be used from the physical blocks of the memory that have not undergone the RDT operation;

[0113] If the terminal device detects and determines based on the amount of data to be stored that the detected physical blocks in the memory are unable to store the data to be stored, the terminal device immediately determines the target physical blocks required for storing the data to be stored among all the physical blocks in the memory.

[0114] Specifically, for example, the terminal device can calculate, based on the amount of data to be stored, the amount of data remaining to be stored that needs to be stored using other physical blocks after using all the detected physical blocks of the memory to write and store part of the data, and then, based on the amount of data, determine the target physical blocks with available storage space equal to the amount of data from the physical blocks in the memory that have not undergone RDT operations.

[0115] It should be noted that, in this embodiment, the number of the target physical blocks may be one or more.

[0116] Step D: after performing the RDT operation on the target physical block to determine that the RDT is successful, control the memory to write the data to be stored into the detected physical block and / or the target physical block for storage.

[0117] After the terminal device determines the target physical block required for writing the data to be stored among all the physical blocks of the memory, it first performs an RDT operation on the target physical block, so that after detecting and determining that the RDT operation on the target physical block is successful, the memory is immediately controlled to programmatically write the data to be stored on both the detected physical block and the target physical block. Alternatively, if the available storage space that the target physical block determined by the terminal device can provide is greater than or equal to the data amount of all the data to be stored, the terminal device can control the memory to programmatically write the data to be stored only on the target physical block.

[0118] In this embodiment, when the terminal device obtains the operation instruction generated by the front end as a data storage instruction instructing the memory to store or write data, it detects and determines the detected physical blocks that have been scanned by the memory after the first RDT operation at the current moment, and based on the data volume of the data to be stored, detects and determines whether the detected physical blocks can store the data to be stored; if the terminal device detects and determines that the detected physical blocks in the memory can store the data to be stored based on the data volume of the data to be stored, the memory is immediately controlled to write the data to be stored on the detected physical blocks in a programming manner; or, if the terminal device detects and determines that the detected physical blocks in the memory can store the data to be stored based on the data volume of the data to be stored, the detected physical blocks are immediately controlled to programmatically write the data to be stored; If the target physical block cannot store the data to be stored, the terminal device immediately determines the target physical block required for writing the data to be stored among all the physical blocks of the memory, and then performs the RDT operation on the target physical block first. After detecting and determining that the RDT operation on the target physical block is successful, the memory is immediately controlled to programmatically write the data to be stored on both the detected physical block and the target physical block. Alternatively, if the target physical block determined by the terminal device can provide available storage space that is greater than or equal to the amount of all the data to be stored, the terminal device can control the memory to programmatically write the data to be stored only on the target physical block.

[0119] In this way, the terminal device can ensure that the physical blocks used by the control memory for data storage are all physical blocks that have undergone RDT operations and whose quality is basically guaranteed, during the process of performing RDT operations on the memory, that is, the production quality of the memory is guaranteed. In addition, the RDT method of the memory of the present invention does not need to consume a lot of time and production costs by performing RDT on the memory in the mass production process of the traditional memory, and will not cause customer returns because the memory cannot respond to the front-end operation instructions because the bad blocks are not detected by RDT, thereby improving the overall mass production efficiency of the memory.

[0120] In addition, please refer to Figure 3The embodiment of the present invention further provides an RDT device of a memory, the RDT device of the memory of the present invention is applied to a terminal device, and the RDT device of the memory of the present invention includes:

[0121] A detection module 10 is used to detect whether there is an RDT record in the memory configured by the current terminal device, wherein the RDT record is a record of performing an RDT operation for the memory for the first time;

[0122] A background RDT module 20, configured to perform a first RDT operation on the memory based on a background operation mode if it is detected that the memory does not have the RDT record;

[0123] The instruction response module 30 is used to suspend the first RDT operation according to a preset operation instruction, and respond to execute the operation instruction.

[0124] Preferably, the background RDT module 20 of the RDT device of the memory of the present invention is further used to detect whether the execution of the operation instruction is completed; if so, continue to restart the first RDT operation based on the background operation mode.

[0125] Preferably, the RDT device of the memory of the present invention further comprises:

[0126] The RDT record generation module is used to synchronously generate the RDT record of the memory when the first RDT operation is performed on the memory.

[0127] Preferably, the operation instruction includes: a data storage instruction, and the instruction response module 30 includes:

[0128] a detection unit, configured to detect a detected physical block of the memory when the data storage instruction is acquired, wherein the detected physical block is a physical block in the memory that has undergone the first RDT operation;

[0129] An execution unit is configured to execute the data storage instruction based on the detected physical block response.

[0130] Preferably, the execution unit includes:

[0131] A detection subunit, used for detecting the data to be stored pointed to by the data storage instruction;

[0132] The execution subunit is used to execute the data storage instruction according to the data amount of the data to be stored and the detected physical block response to write the data to be stored into the memory.

[0133] Preferably, the execution subunit includes:

[0134] A first determining subunit, configured to determine whether the detected physical block can store and write the data to be stored according to the data amount;

[0135] The first data storage subunit is used to control the memory to write the data to be stored into the detected physical block for storage if it is determined that the detected physical block can store the data to be stored.

[0136] Preferably, the execution subunit further includes:

[0137] A second determining subunit is used to determine a target physical block to be used from the physical blocks of the memory that do not perform the RDT operation if it is determined that the detected physical block cannot store or write the data to be stored;

[0138] The second data storage subunit is used for performing an RDT operation on the target physical block to determine that the RDT is successful, and then controlling the memory to write the data to be stored into the detected physical block and / or the target physical block for storage.

[0139] The steps implemented by each functional module of the RDT device of the memory of the present invention when the controller is running can refer to the above-mentioned embodiment of the RDT method of the memory of the present invention, and will not be repeated here.

[0140] In addition, an embodiment of the present invention also proposes a terminal device, which includes: a memory, a processor, and an RDT program of the memory stored on the memory and executable on the processor, wherein the RDT program of the memory implements the steps of the RDT method of the memory as described above when executed by the processor.

[0141] Among them, the steps implemented when the RDT program of the memory running on the processor is executed can refer to the various embodiments of the RDT method of the memory of the present invention, and will not be repeated here.

[0142] In addition, an embodiment of the present invention also proposes a computer storage medium, which is applied to a computer. The computer storage medium can be a non-volatile computer-readable computer storage medium, and an RDT program of a memory is stored on the computer storage medium. When the RDT program of the memory is executed by a processor, the steps of the RDT method of the memory as described above are implemented.

[0143] Among them, the steps implemented when the RDT program of the memory running on the processor is executed can refer to the various embodiments of the RDT method of the memory of the present invention, and will not be repeated here.

[0144] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or system including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or system. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or system including the element.

[0145] The serial numbers of the above embodiments of the present invention are only for description and do not represent the advantages or disadvantages of the embodiments.

[0146] Through the description of the above implementation methods, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus a necessary general hardware platform, and of course can also be implemented by hardware, but in many cases the former is a better implementation method. Based on such an understanding, the technical solution of the present invention is essentially or the part that contributes to the prior art can be embodied in the form of a software product, and the computer software product is stored in a computer storage medium (such as Flash memory, ROM / RAM, disk, CD), including a number of instructions for a terminal device (which can be a mobile phone, computer, server, or network device, etc.), and the controller for controlling the storage medium to perform data read and write operations executes the methods described in each embodiment of the present invention.

[0147] The above are only preferred embodiments of the present invention, and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A reliability demonstration test method for a memory, characterized in that: The reliability demonstration test method of the memory is applied to a terminal device, and the terminal device is a device that executes the reliability demonstration test method of the memory for a memory based on NAND flash as a storage medium. The reliability demonstration test method of the memory includes: After the mass-produced memory is packaged into the terminal device, during the power-on operation, detecting whether there is a reliability demonstration test record for the memory currently configured in the terminal device, wherein the reliability demonstration test record is a record of performing a reliability demonstration test operation for the memory for the first time; If it is detected that the memory does not have the reliability demonstration test record, it means that the memory has not been subjected to a reliability demonstration test operation during mass production, and the first reliability demonstration test operation is performed on the memory based on the background operation mode; The first reliability demonstration test operation is suspended according to a preset operation instruction, and the operation instruction is executed in response.

2. The memory reliability demonstration test method according to claim 1, characterized in that: After the step of pausing the first reliability demonstration test operation according to the preset operation instruction and responding to and executing the operation instruction, the method further includes: Detecting whether the operation instruction has been executed; If yes, continue to restart the first reliability demonstration test operation based on the background running mode.

3. The memory reliability demonstration test method according to claim 1 or 2, characterized in that: The method further comprises: When the first reliability demonstration test operation is performed on the memory, a reliability demonstration test record of the memory is synchronously generated.

4. The memory reliability demonstration test method according to claim 1, characterized in that: The operation instruction includes: a data storage instruction, and the step of responding to and executing the operation instruction includes: When the data storage instruction is obtained, detecting the detected physical blocks of the memory, wherein the detected physical blocks are physical blocks in the memory that have undergone the first reliability demonstration test operation; The data storage instruction is executed based on the detected physical block response.

5. The memory reliability demonstration test method according to claim 4, characterized in that: The step of executing the data storage instruction based on the detected physical block response comprises: Detecting the data to be stored pointed to by the data storage instruction; The data storage instruction is executed according to the data amount of the data to be stored and the detected physical block response to write the data to be stored into the memory.

6. The memory reliability demonstration test method according to claim 5, characterized in that: The step of executing the data storage instruction to write the data to be stored into the memory according to the data amount of the data to be stored and the detected physical block response comprises: Determining whether the detected physical block can store and write the data to be stored according to the data amount; If it is determined that the detected physical block can store and write the data to be stored, the memory is controlled to write the data to be stored into the detected physical block for storage.

7. The memory reliability demonstration test method according to claim 6, characterized in that: After the step of determining whether the detected physical block can store and write the data to be stored according to the data amount, the method further includes: If it is determined that the detected physical block cannot store and write the data to be stored, determining a target physical block to be used from the physical blocks of the memory that have not been subjected to the reliability demonstration test operation; After performing a reliability demonstration test operation on the target physical block to determine that the reliability demonstration test is successful, the memory is controlled to write the data to be stored into the detected physical block and / or the target physical block for storage.

8. A memory reliability demonstration test device, characterized in that: The reliability demonstration test device of the memory is applied to a terminal device, and the terminal device is a device that executes the reliability demonstration test method of the memory for a memory based on NAND flash as a storage medium. The reliability demonstration test device of the memory includes: A detection module, configured to detect whether there is a reliability demonstration test record for the memory currently configured in the terminal device after the mass-produced memory is packaged into the terminal device, during power-on operation, wherein the reliability demonstration test record is a record of performing a reliability demonstration test operation for the memory for the first time; A background reliability demonstration test module, for performing a first reliability demonstration test operation on the memory based on a background operation mode if it is detected that the memory does not have the reliability demonstration test record, indicating that the memory has not been subjected to a reliability demonstration test operation during mass production; The instruction response module is used to suspend the first reliability demonstration test operation according to a preset operation instruction, and respond to execute the operation instruction.

9. A terminal device, characterized in that: The terminal device includes: a memory, a processor, and a memory reliability demonstration test program stored in the memory and executable on the processor. When the memory reliability demonstration test program is executed by the processor, the steps of the memory reliability demonstration test method as described in any one of claims 1 to 7 are implemented.

10. A computer storage medium, characterized in that: The computer storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the reliability demonstration test method of the memory as claimed in any one of claims 1 to 7 are implemented.

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