A semiconductor integrated circuit device and a method for manufacturing the same

Abstract

The present invention discloses a semiconductor integrated circuit device and a manufacturing method thereof, wherein the semiconductor integrated circuit device includes a resistive switching layer, and a first electrode and a second electrode respectively located on both sides of the resistive switching layer and opposite to each other, wherein the resistive switching layer includes at least two layers of oxide films alternately formed by at least two materials, so that conductive filaments are generated only in the oxide film formed by the specified material when a first voltage is applied. Since the voltages required to form conductive filaments in oxide films of different materials are different, the voltage can be controlled within a certain range so that the conductive filaments are formed only in the oxide film formed by the specified material, and cannot be formed in the oxide film formed by other materials. In this way, the formation position and direction of the conductive filaments can be predefined by laying out the channels formed by the oxide film, so that the distribution of the conductive filaments is more uniform.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor devices, and in particular to a resistive random access memory (RRAM) and a manufacturing method thereof. Background Art

[0002] In recent years, Resistive Random Access Memory (RRAM), which works on the principle of resistance transition effect, is one of the most promising next-generation non-volatile memories. Compared with traditional floating gate flash memory, it has obvious advantages in device structure, speed, miniaturization, three-dimensional integration potential, power consumption, etc.

[0003] The basic structure of a resistive random access memory is a metal-insulator-metal (MIM) structure, which includes at least a first electrode, a resistive switching layer and a second electrode. The resistive switching layer is made of various oxide thin film materials, such as transition metal oxides. The resistive switching layer undergoes a reversible transition between different resistance states under the action of applied electrical signals such as voltage and current. In a binary memory, there are usually only high resistance states and low resistance states, and the greater the difference between the high resistance state and the low resistance state, the more accurate it is; in a multi-value memory, for example, a memristor that implements computing in memory (CIM) requires multiple resistance states to represent multiple values.

[0004] The transition of the resistance state between different resistance states is achieved by the formation and breaking of conductive filaments. Therefore, for multi-valued memory, the formation and distribution of conductive filaments should be relatively uniform to achieve linear resistance state transition between multiple resistance states.

[0005] However, in the existing, simply stacked RRAM structure, the generation of conductive filaments usually occurs in a resistive switching layer formed of a single material with a large expansion space, which makes the formation of conductive filaments more random and difficult to control, making it difficult to meet the needs of multi-valued memory.

[0006] Therefore, how to control the formation of the conductive filaments to make the distribution of the conductive filaments more uniform to meet the needs of multi-valued memory is still a technical problem that needs to be solved urgently. Summary of the invention

[0007] In view of the above technical problems, the inventors creatively provide a semiconductor integrated circuit device and a method for manufacturing the same.

[0008] According to a first aspect of an embodiment of the present invention, a semiconductor integrated circuit device is provided, which includes a resistive layer, and a first electrode and a second electrode respectively located on both sides of the resistive layer and opposite to each other, wherein the resistive layer includes at least two layers of oxide films alternately formed by at least two materials, so that conductive filaments are generated only in the oxide film formed by a specified material when a first voltage is applied.

[0009] According to an implementation of an embodiment of the present invention, the resistive switching layer includes a resistive switching layer with a trench structure.

[0010] According to an implementation manner of an embodiment of the present invention, the resistive switching layer includes a resistive switching layer with a planar structure.

[0011] According to an embodiment of the present invention, at least two materials include transition metal oxides.

[0012] According to an embodiment of the present invention, the transition metal oxide includes hafnium oxide, zirconium oxide, titanium oxide, zinc oxide, tungsten oxide, tantalum oxide, molybdenum oxide or nickel oxide.

[0013] According to a second aspect of an embodiment of the present invention, a method for manufacturing a semiconductor integrated circuit device is provided, the method comprising: obtaining a base plate with a metal wire; forming a first electrode on the base plate; forming a resistive layer above the first electrode, the resistive layer comprising at least two layers of oxide films alternately formed by at least two materials, so that when a first voltage is applied, conductive filaments are generated only in the oxide films formed by a specified material; and forming a second electrode above the resistive layer so that the second electrode is opposite to the first electrode.

[0014] According to an implementation manner of an embodiment of the present invention, a resistive layer is formed on a first electrode, including: forming a first insulating layer on the first electrode; cutting grooves at a position above the first electrode in the first insulating layer to form grooves; alternately depositing at least two materials in the grooves layer by layer to form at least two layers of oxide films; removing the at least two layers of oxide films above the first insulating layer, and retaining the at least two layers of oxide films in the grooves.

[0015] According to an embodiment of the present invention, forming a resistive layer on a first electrode includes: alternately depositing at least two materials layer by layer on the first electrode to form at least two oxide films; and patterning the oxide films to form the resistive layer.

[0016] According to a third aspect of an embodiment of the present invention, a method for manufacturing a semiconductor integrated circuit device is provided, the method comprising: obtaining a base plate with a metal wire; forming a raised resistive layer on the base plate, the resistive layer comprising at least two layers of oxide films alternately formed by at least two materials, so that when a first voltage is applied, conductive filaments are generated only in the oxide films formed by specified materials; depositing an electrode material on the raised resistive layer; removing the electrode material above the resistive layer to obtain a first electrode layer and a second electrode layer arranged on the left and right sides of the resistive layer; patterning the first electrode layer and the second electrode layer to obtain a first electrode and a second electrode, so that the second electrode is opposite to the first electrode.

[0017] According to an implementation of an embodiment of the present invention, a raised resistive switching layer is formed on a base plate, including: alternately depositing at least two materials layer by layer on the base plate to form at least two layers of oxide films; and patterning the oxide films to form a raised resistive switching layer.

[0018] An embodiment of the present invention provides a semiconductor integrated circuit device and a manufacturing method thereof, wherein the semiconductor integrated circuit device includes a resistive switching layer, and a first electrode and a second electrode respectively located on both sides of the resistive switching layer and opposite to each other, wherein the resistive switching layer includes at least two layers of oxide films alternately formed by at least two materials, so that conductive filaments are generated only in the oxide film formed by the specified material when a first voltage is applied. Since the voltages required to form conductive filaments in oxide films of different materials are different, the voltage can be controlled within a certain range so that the conductive filaments are formed only in the oxide film formed by the specified material, and cannot be formed in the oxide film formed by other materials. In this way, the formation position and direction of the conductive filaments can be predefined by laying out the channels formed by the oxide film, so that the distribution of the conductive filaments is more uniform. Furthermore, the semiconductor integrated circuit device is also easier to realize the conversion between multiple resistance states, thereby better promoting the semiconductor integrated circuit device, especially the application of RRAM as a memristor in more scenarios such as storage and computing integration.

[0019] It should be understood that the teachings of the present invention are not required to achieve all of the above beneficial effects, but specific technical solutions can achieve specific technical effects, and other embodiments of the present invention can also achieve beneficial effects not mentioned above. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The above and other objects, features and advantages of the exemplary embodiments of the present invention will become readily understood by reading the detailed description below with reference to the accompanying drawings. In the accompanying drawings, several embodiments of the present invention are shown in an exemplary and non-limiting manner, in which:

[0021] In the drawings, the same or corresponding reference numerals represent the same or corresponding parts.

[0022] Figure 1 A schematic cross-sectional view of the structure of a semiconductor integrated circuit device according to an embodiment of the present invention is shown;

[0023] Figure 2 A schematic cross-sectional view of the structure of a semiconductor integrated circuit device according to another embodiment of the present invention is shown;

[0024] Figure 3 A schematic cross-sectional view of the structure of a semiconductor integrated circuit device according to another embodiment of the present invention is shown;

[0025] Figure 4 Shows Figure 1 The schematic cross-sectional view of the structure of a semiconductor integrated circuit device at a certain stage in the manufacturing process of the embodiment shown;

[0026] Figure 5 Shows Figure 1 The schematic cross-sectional view of the structure of a semiconductor integrated circuit device at a certain stage in the manufacturing process of the embodiment shown;

[0027] Figure 6 Shows Figure 1 The schematic cross-sectional view of the structure of a semiconductor integrated circuit device at a certain stage in the manufacturing process of the embodiment shown;

[0028] Figure 7 Shows Figure 1 The schematic cross-sectional view of the structure of a semiconductor integrated circuit device at a certain stage in the manufacturing process of the embodiment shown;

[0029] Figure 8 Shows Figure 1 The schematic cross-sectional view of the structure of a semiconductor integrated circuit device at a certain stage in the manufacturing process of the embodiment shown;

[0030] Fig. 9 Shows Figure 2 The schematic cross-sectional view of the structure of a semiconductor integrated circuit device at a certain stage in the manufacturing process of the embodiment shown;

[0031] Fig.10 Shows Figure 2 The schematic cross-sectional view of the structure of a semiconductor integrated circuit device at a certain stage in the manufacturing process of the embodiment shown;

[0032] Fig.11 Shows Figure 2 The schematic cross-sectional view of the structure of a semiconductor integrated circuit device at a certain stage in the manufacturing process of the embodiment shown;

[0033] Fig.12 Shows Figure 2 The schematic cross-sectional view of the structure of a semiconductor integrated circuit device at a certain stage in the manufacturing process of the embodiment shown;

[0034] Fig.13Shows Figure 2 The schematic cross-sectional view of the structure of a semiconductor integrated circuit device at a certain stage in the manufacturing process of the embodiment shown;

[0035] Fig.14 Shows Figure 3 The schematic cross-sectional view of the structure of a semiconductor integrated circuit device at a certain stage in the manufacturing process of the embodiment shown;

[0036] Fig.15 Shows Figure 3 The schematic cross-sectional view of the structure of a semiconductor integrated circuit device at a certain stage in the manufacturing process of the embodiment shown;

[0037] Fig.16 Shows Figure 3 The schematic cross-sectional view of the structure of a semiconductor integrated circuit device at a certain stage in the manufacturing process of the embodiment shown;

[0038] Fig.17 Shows Figure 3 The illustrated embodiment is a schematic cross-sectional view of the structure of a semiconductor integrated circuit device at a certain stage in the manufacturing process. DETAILED DESCRIPTION

[0039] In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0040] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples, unless they are contradictory.

[0041] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0042] According to a first aspect of an embodiment of the present invention, there is provided a semiconductor integrated circuit device, such as Figure 1 As shown, the semiconductor integrated circuit device includes a resistive switching layer, and a first electrode 101 and a second electrode 107 located on both sides of the resistive switching layer and opposite to each other, and the resistive switching layer includes at least two layers of oxide films (for example, oxide films 104 and oxide films 105) formed alternately of at least two materials, so that when a first voltage is applied (in the direction indicated by the dotted arrow), conductive filaments are generated only in the oxide film formed of a specified material. The direction indicated by the dotted arrow is perpendicular to the first electrode 101 and the second electrode 107, and is the direction in which the field strength is formed between the first electrode 101 and the second electrode 107. The direction in which the field strength is formed between the first electrode 101 and the second electrode 107 is parallel to the direction in which the oxide film forms a channel.

[0043] The resistive layer is usually made of various oxide thin film materials, including one or more of aluminum oxide, copper oxide, hafnium oxide, molybdenum oxide, nickel oxide, tantalum oxide, titanium oxide, zinc oxide, zirconium oxide, and tungsten oxide.

[0044] The number of layers of the oxide film is at least two, so that conductive filaments can be formed in the oxide film formed of the specified material by applying a suitable voltage, while conductive filaments are not formed in the oxide film formed of the non-specified material, thereby achieving the purpose of controlling the position and direction of the formation of the conductive filaments. The number of layers of the oxide film mainly depends on various factors such as the size of the semiconductor integrated circuit device and the demand for the formation density of the conductive filaments. Among them, the more layers there are, the more uniform the distribution of the conductive filaments.

[0045] The number of material types of the oxide film is also at least two. When the number of layers of the oxide film exceeds the number of material types, it can also be achieved by alternately depositing different materials. For example, when there are only two oxide film materials, if you want to achieve a four-layer oxide film, you can achieve it by depositing material A, depositing material B, re-depositing material A, and re-depositing material B in the following process sequence.

[0046] The first electrode and the second electrode may be made of any electrode material used to manufacture electrodes, including one or more of aluminum, copper, gold, platinum, tantalum, tantalum nitride, titanium, titanium nitride, tungsten, and tungsten nitride.

[0047] Under the action of electrical signals such as applied voltage, the resistive layer will form different resistance states and switch between different resistance states. The switch between resistance states is achieved through the formation and breaking of conductive filaments. The main factors affecting the formation of conductive filaments are electric field strength and temperature. To achieve a certain electric field strength, sufficient voltage must be applied, and different materials require different voltages to form conductive filaments.

[0048] The semiconductor integrated circuit device in the embodiment of the present invention cleverly utilizes the principle that different voltages are required to form conductive filaments under different materials, and determines a first voltage within a voltage range that can only form conductive filaments in an oxide film formed of a specified material, but cannot form conductive filaments in an oxide film formed of non-specified materials.

[0049] For example, assuming that the voltage that causes an oxide film formed of a specified material to have the conditions for forming conductive filaments is a second voltage, and the voltage that causes another oxide film adjacent to it to have the conditions for forming conductive filaments is a third voltage and the third voltage is greater than the second voltage, then the first voltage is generally greater than the second voltage and less than the third voltage.

[0050] In this way, after applying the first voltage, conductive filaments are formed in the oxide film formed by the specified material, while conductive filaments cannot be formed in another oxide film adjacent thereto, thereby controlling the formation of conductive filaments in the channel formed by the specified material, thereby making the distribution of conductive filaments more uniform. In addition, the formation position and direction of conductive filaments can be predefined by laying out the channel formed by the oxide film.

[0051] The designated material in the embodiment of the present invention can be a certain material or several materials. When voltage is applied, conductive filaments are generated only in the oxide film formed by the designated material, which means that conductive filaments cannot be generated in the oxide film formed by non-designated materials because the conversion conditions such as the forming voltage are not met.

[0052] According to an implementation of an embodiment of the present invention, the resistive switching layer includes a resistive switching layer with a trench structure.

[0053] In this embodiment, the resistive switching layer adopts a trench structure. On the one hand, the trench structure can easily realize the vertical stacking of oxide films of different materials through the deposition process, and the voltage action direction is usually in the vertical direction. Therefore, under the action of voltage, channels with different field strengths can be formed between oxide films of different materials, so as to control the formation position and direction of conductive filaments and make the distribution of conductive filaments more uniform; on the other hand, the trench structure saves more space and is easier to meet the needs of miniaturization.

[0054] exist Figure 1 In the embodiment of the semiconductor integrated circuit device shown, the resistive switching layer thereof is a trench structure, and the resistive switching layer of the trench structure is prepared by alternately depositing oxide films 104 and oxide films 105 .

[0055] Assume that the oxide film 104 is made of hafnium dioxide, and the oxide film 105 is made of zirconium dioxide. Since the voltage required to form a resistance wire in hafnium dioxide is greater than the voltage required to form a resistance wire in zirconium dioxide, when a voltage greater than the voltage required to form a resistance wire in zirconium dioxide and less than the voltage required to form a resistance wire in hafnium dioxide is applied in the vertical direction (the direction indicated by the dotted arrow) (i.e., the first voltage is applied), the conductive filament will be formed in the oxide film 105 made of zirconium dioxide, but will not be formed in the oxide film 104 made of hafnium dioxide.

[0056] Figure 2 Another embodiment of a semiconductor integrated circuit device in which the resistive switching layer is a trench structure is shown. In this embodiment, the semiconductor integrated circuit device includes a resistive switching layer, and a first electrode 201 and a second electrode 206 respectively located on both sides of the resistive switching layer and opposite to each other. The resistive switching layer is a trench structure, including at least two layers of oxide films (e.g., oxide films 202 and oxide films 203) formed alternately of at least two materials, so that when a first voltage is applied (in the direction indicated by the dotted arrow), conductive filaments are generated only in the oxide film formed of a specified material. The direction indicated by the dotted arrow is perpendicular to the first electrode 201 and the second electrode 206, and is the direction in which the field strength is formed between the first electrode 201 and the second electrode 206. The direction in which the field strength is formed between the first electrode 201 and the second electrode 206 is parallel to the direction in which the oxide film forms a channel.

[0057] According to an implementation manner of an embodiment of the present invention, the resistive switching layer includes a resistive switching layer with a planar structure.

[0058] Figure 3 An embodiment of a semiconductor integrated circuit device with a planar structure of a resistive switching layer is shown. Figure 3 As shown, the semiconductor integrated circuit device includes a resistive switching layer, and a first electrode 305 and a second electrode 305 respectively located on both sides of the resistive switching layer and opposite to each other. The resistive switching layer is a planar structure, including at least two layers of oxide films (e.g., oxide films 301 and oxide films 302) formed alternately by at least two materials, so that when a first voltage is applied (in the direction indicated by the dotted arrow), conductive filaments are generated only in the oxide films formed by the specified material. Among them, the first electrode 305 and the second electrode 305 are formed by deposition using the same electrode material, and the first electrode 305 and the second electrode 305 arranged on both sides of the resistive switching layer are obtained by removing the electrode material above the resistive switching layer. The direction indicated by the dotted arrow is perpendicular to the first electrode 305 and the second electrode 305, and is the direction in which the field strength is formed between the first electrode 305 and the second electrode 305. The direction in which the field strength is formed between the first electrode 305 and the second electrode 305 is parallel to the direction in which the oxide film forms a channel.

[0059] According to an embodiment of the present invention, at least two materials include transition metal oxides.

[0060] In this embodiment, at least two materials of at least two oxide films in the deposited resistive switching layer are transition metal oxides. Transition metal oxide materials are resistive switching materials that have been studied more in recent years. Because they have a variety of physical properties, they are particularly suitable for controlling the formation of conductive filaments by voltage changes. Different transition metal oxides have different formation voltages and have a certain operable space (there is a first voltage with a value between different formation voltages), which is more suitable as the resistive switching layer material of the embodiment of the present invention. In addition, because transition metal oxide materials have a high cost performance, using transition metal oxide materials as resistive switching materials can also achieve better economic benefits.

[0061] According to an embodiment of the present invention, the transition metal oxide includes hafnium oxide, zirconium oxide, titanium oxide, zinc oxide, tungsten oxide, tantalum oxide, molybdenum oxide or nickel oxide.

[0062] After in-depth research and continuous practice by the inventors, it is found that the use of two or three materials selected from hafnium oxide, zirconium oxide, titanium oxide, zinc oxide, tungsten oxide, tantalum oxide, molybdenum oxide or nickel oxide to alternately deposit and form at least two layers of oxide films has a better effect.

[0063] In addition, in the above embodiments, an oxygen-grabbing layer may be provided between the second electrode and the resistive layer. Figure 1 The oxygen-grabbing layer 106 shown, Figure 2 The oxygen grabbing layer 205 and Figure 3 The oxygen grabbing layer 304 is shown, but this structure is not necessary. The materials of the oxygen grabbing layer mainly include but are not limited to titanium, hafnium, zirconium, and titanium, and also include unsaturated oxides such as titanium oxide and hafnium oxide. The function of the oxygen grabbing layer is mainly to grab oxygen in the resistive layer to form oxygen vacancies.

[0064] exist Figure 2 In the embodiment shown, when power is turned on, the second electrode 206 in the horizontal direction and the first electrode 201 may also generate an electric field, which may affect the implementation effect of this embodiment. Therefore, an isolation layer 204 is provided between the second electrode 206 in the horizontal direction and the resistive layer to generate a vertical electric field between the second electrode 206 in the horizontal direction and the first electrode 201.

[0065] exist Figure 3 In the illustrated embodiment, in order to prevent the resistive layer from being directly exposed and damaged in a subsequent etching process, an isolation layer 303 is also disposed above the resistive layer to protect the integrity of the resistive layer.

[0066] The material of the isolation layer can be selected according to different underlying materials, common ones are SiN, SiON, SiCN, etc.

[0067] According to a second aspect of an embodiment of the present invention, a method for manufacturing a semiconductor integrated circuit device is provided, the method comprising: obtaining a base plate with a metal wire; forming a first electrode on the base plate; forming a resistive layer above the first electrode, the resistive layer comprising at least two layers of oxide films alternately formed by at least two materials, so that when a first voltage is applied, conductive filaments are generated only in the oxide films formed by a specified material; and forming a second electrode above the resistive layer so that the second electrode is opposite to the first electrode.

[0068] Among them, the base plate with metal wires includes a word line circuit embedded thereon and a connecting plug that can be electrically connected to the base plate. Since these components are all existing technologies and the preparation method is also a commonly used preparation method in this field, they will not be described here.

[0069] The manufacturing method for forming the first electrode and the second electrode mainly includes depositing electrode materials to form an electrode layer, and then patterning the electrode layer, that is, first photolithography and then etching the electrode layer to achieve the designed electrode shape and array. In this process, any suitable deposition process can be used, such as chemical vapor deposition, physical vapor deposition or atomic layer deposition.

[0070] The manufacturing method for forming the resistive switching layer includes alternately depositing at least two oxide thin film materials layer by layer to form at least two oxide thin films. In this process, any applicable deposition process can be used, such as chemical vapor deposition, physical vapor deposition or atomic layer deposition.

[0071] According to an implementation manner of an embodiment of the present invention, a resistive layer is formed on a first electrode, including: forming a first insulating layer on the first electrode; cutting grooves at a position above the first electrode in the first insulating layer to form grooves; alternately depositing at least two materials in the grooves layer by layer to form at least two layers of oxide films; removing the at least two layers of oxide films above the first insulating layer, and retaining the at least two layers of oxide films in the grooves.

[0072] The preparation process for forming the first insulating layer mainly involves depositing insulating materials. A specific deposition method, such as chemical vapor deposition, can be selected according to the specific conditions of the implementer. The material of the insulating layer can be any applicable insulating material, such as silicon oxide.

[0073] The process of groove engraving mainly refers to photolithography followed by etching.

[0074] When at least two materials are deposited layer by layer in the trench to form at least two oxide films, any suitable deposition process may be used, such as chemical vapor deposition, physical vapor deposition or atomic layer deposition.

[0075] When removing the at least two oxide films on the first insulating layer, any polishing process, such as chemical mechanical polishing, may be used.

[0076] A second electrode is formed on the resistive layer so that the second electrode is opposite to the first electrode, including: forming a second insulating layer on the first insulating layer; forming an oxide-grabbing layer on the second insulating layer; depositing a second electrode material on the oxide-grabbing layer to form a second electrode layer; patterning the second electrode layer to obtain a second electrode, and making the second electrode opposite to the first electrode.

[0077] The manufacturing method and materials used for the second insulating layer are similar to those for the first insulating layer, and are not described in detail herein.

[0078] In addition, as required, after forming the resistive layer and before forming the second electrode on the resistive layer so that the second electrode is opposite to the first electrode, a step of forming an oxygen-grabbing layer can be added. The process of forming the oxygen-grabbing layer is mainly achieved by depositing the oxygen-grabbing layer material, wherein any applicable deposition process can be used, for example, chemical vapor deposition, physical vapor deposition or atomic layer deposition.

[0079] If the step of forming an oxide-grabbing layer is added, a second electrode layer needs to be formed on the oxide-grabbing layer. The process of forming the second electrode layer on the oxide-grabbing layer is mainly achieved by depositing electrode materials. The second electrode layer is patterned, that is, the second electrode layer is first photolithographically processed and then etched to achieve the designed second electrode shape and array, and the second electrode is opposite to the first electrode.

[0080] According to an embodiment of the present invention, a resistive layer is formed on a first electrode, including: alternately depositing at least two materials layer by layer on the first electrode to form at least two layers of oxide films; and patterning the oxide films to form a resistive layer.

[0081] In this embodiment, at least two layers of oxide films formed by alternately depositing at least two materials on the first electrode will wrap around the first electrode to form a Figure 2 Afterwards, the main purpose of patterning the resistive switching layer is to facilitate the deposition of the second electrode thereon, so that the second electrode is opposite to the first electrode, so that when the first voltage is applied (in the direction shown by the dotted arrow), conductive filaments are generated only in the oxide film formed by the specified material.

[0082] According to a third aspect of an embodiment of the present invention, a method for manufacturing a semiconductor integrated circuit device is provided, the method comprising: obtaining a base plate with a metal wire; forming a raised resistive layer on the base plate, the resistive layer comprising at least two layers of oxide films alternately formed by at least two materials, so that when a first voltage is applied, conductive filaments are generated only in the oxide films formed by specified materials; depositing an electrode material on the raised resistive layer; removing the electrode material above the resistive layer to obtain a first electrode layer and a second electrode layer arranged on the left and right sides of the resistive layer; patterning the first electrode layer and the second electrode layer to obtain a first electrode and a second electrode, so that the second electrode is opposite to the first electrode.

[0083] The manufacturing method of the semiconductor integrated circuit device according to the embodiment of the present invention is mainly used to manufacture Figure 3 The semiconductor integrated circuit device shown has a planar structure resistive switching layer.

[0084] Unlike the semiconductor integrated circuit device with a trench structure resistive switching layer, the resistive switching layer to be manufactured in the embodiment of the present invention is a planar structure. When forming a conductive filament in an oxide film layer formed of a specified material, it is necessary to form a conductive filament in a direction parallel to the oxide film layer (such as Figure 3 A first voltage is applied (in the direction of the dotted arrow shown in the figure), and the first electrode and the second electrode are arranged on both sides of the resistive layer and part of the electrodes are perpendicular to the oxide film layer, such as Figure 3 shown.

[0085] In order to form the above structure, the manufacturing method of the semiconductor integrated circuit device of the embodiment of the present invention forms a convex resistive switching layer on the bottom plate, then deposits electrode material, and then removes the electrode material above the resistive switching layer to obtain a first electrode and a second electrode arranged on the left and right sides of the resistive switching layer, so that the following structure can be obtained: Figure 3 The semiconductor integrated circuit device shown.

[0086] The electrode material above the resistive layer is removed to obtain the first electrode and the second electrode respectively arranged on the left and right sides of the resistive layer by using a chemical mechanical polishing (CMP) process or an etching process.

[0087] According to an implementation of an embodiment of the present invention, a raised resistive switching layer is formed on a base plate, including: alternately depositing at least two materials layer by layer on the base plate to form at least two layers of oxide films; and patterning the oxide films to form a raised resistive switching layer.

[0088] When at least two materials are alternately deposited layer by layer on the substrate to form at least two oxide films, any applicable deposition process may be used, such as chemical vapor deposition, physical vapor deposition or atomic layer deposition.

[0089] Patterning the oxide film mainly refers to first photolithography and then etching the oxide film to realize a convex resistive switching layer. The convex resistive switching layer is a columnar, rectangular or other planar convex structure protruding from the bottom plate.

[0090] The following is combined Figures 4 to 8 describe Figure 1 The manufacturing process of the embodiment of the present invention shown includes:

[0091] Step S410, obtaining a base plate with metal wires;

[0092] Step S420, depositing a first electrode material on the bottom plate to form a first electrode layer, and performing a photolithography and then etching process on the first electrode layer to obtain a first electrode 101;

[0093] Step S430, depositing a first insulating layer 102 on the first electrode 101 to obtain Figure 4 The structure shown;

[0094] Step S440, a groove 103 is formed on the first insulating layer 102 by using a process of photolithography followed by etching, and the groove 103 is obtained. Figure 5 The structure shown;

[0095] Step S450, alternately depositing oxide film materials layer by layer in the groove 103 to form oxide film 104 and oxide film 105, and obtaining Figure 6 The structure shown;

[0096] Step S460, removing the oxide film on the first insulating layer to obtain Figure 7 The structure shown;

[0097] Step S470, depositing an oxide-grabbing layer 106 on the first insulating layer;

[0098] Step S480, depositing a second electrode material on the oxygen-grabbing layer 106 to form a second electrode layer 107, Figure 8 The structure shown;

[0099] Step S490, the second electrode layer 107 and the oxygen-grabbing layer 106 are subjected to a photolithography-and-then-etching process to obtain the second electrode 101;

[0100] Step S500: deposit a second insulating layer 108 on the second electrode and grind it flat to obtain a Figure 1 The semiconductor integrated circuit device shown.

[0101] In the above steps, step S420 is used to form a first electrode on the base plate; steps S430 to S460 are used to form a resistive layer on the first electrode, the resistive layer including at least two layers of oxide films alternately formed by at least two materials, so that when a first voltage is applied, conductive filaments are generated only in the oxide film formed by a specified material; steps S470 to S500 are used to form a second electrode on the resistive layer so that the second electrode is opposite to the first electrode.

[0102] The following is combined Figures 9 to 13 describe Figure 2 The manufacturing process of the embodiment of the present invention shown includes:

[0103] Step S910, obtaining a base plate with metal wires;

[0104] Step S920, depositing a first electrode material on the bottom plate to form a first electrode layer, and performing a photolithography and then etching process on the first electrode layer to obtain a first electrode 201, that is, Fig. 9 The structure shown;

[0105] Step S930, alternately depositing oxide thin film materials layer by layer on the first electrode 201 to form an oxide thin film 202 and an oxide thin film 203 to form a resistive switching layer, and obtaining Fig.10 The structure shown;

[0106] Step S940, depositing an isolation layer material 204 on the resistive layer to obtain Fig.11 The structure shown;

[0107] Step S950: Fig.11 The structure shown in FIG. 1 is patterned (by using a process of photolithography followed by etching) to obtain Fig.12 The structure shown;

[0108] Step S960, depositing an oxygen-grabbing layer 205 on the resistive layer;

[0109] Step S970, depositing a second electrode material on the oxygen-grabbing layer 205 to form a second electrode layer 206, Fig.13 The structure shown;

[0110] Step S980, the second electrode layer 206 and the oxygen-grabbing layer 205 are first photolithographically processed and then etched to obtain Figure 2 The semiconductor integrated circuit device shown.

[0111] In the above steps, step S920 is used to form a first electrode on the base plate; steps S930 to S950 are used to form a resistive layer on the first electrode, wherein the resistive layer includes at least two layers of oxide films alternately formed by at least two materials, so that when a first voltage is applied, conductive filaments are generated only in the oxide film formed by a specified material; steps S960 to S980 are used to form a second electrode on the resistive layer so that the second electrode is opposite to the first electrode.

[0112] The following is combined Figures 14 to 17 describe Figure 3 The manufacturing process of the embodiment of the present invention shown includes:

[0113] Step S1410, obtaining a base plate with metal wires;

[0114] Step S1420, depositing oxide thin film materials layer by layer alternately on the bottom plate to form oxide thin films 301 and oxide thin films 302, and obtaining Fig.14 The structure shown;

[0115] Step S1430, depositing an isolation layer material 303 on the resistive layer to obtain Fig.15 The structure shown;

[0116] Step S1440: Fig.15 The structure shown in the figure is first photolithographically etched and then etched to obtain Fig.16 The convex resistive switching layer shown;

[0117] Step S1450, depositing an oxide-grabbing layer 304 on the resistive layer;

[0118] Step S1460, depositing a first electrode material on the oxygen-grabbing layer 304 to form a first electrode layer 305, Fig.17 The structure shown;

[0119] Step S1470, using a chemical mechanical polishing process to remove the electrode material above the resistive switching layer to obtain a first electrode layer 305 and a second electrode layer 305 arranged on the left and right sides of the resistive switching layer;

[0120] Step S1480, patterning the first electrode layer 305 and the second electrode layer 305 (using a process of photolithography followed by etching) to obtain Figure 3 The semiconductor integrated circuit device shown.

[0121] In the above steps, step S1420 to step S1440 are used to form a raised resistive layer on the base plate, wherein the resistive layer includes at least two layers of oxide films alternately formed by at least two materials, so that when a first voltage is applied, conductive filaments are generated only in the oxide films formed by specified materials; step S1450 to step S1460 are used to deposit electrode materials on the raised resistive layer; step S1470 is used to remove the electrode material above the resistive layer to obtain a first electrode layer and a second electrode layer respectively arranged on the left and right sides of the resistive layer; step S1480 is used to pattern the first electrode layer and the second electrode layer to obtain a first electrode and a second electrode so that the second electrode is opposite to the first electrode.

[0122] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0123] The oxide mentioned herein, for example, hafnium oxide, is not limited to its specific chemical molecular composition structure, and may be N M hafnium oxide, wherein N and M are any natural numbers, and N and M may be the same or different.

[0124] In the several embodiments provided in the present application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are only schematic. For example, the division of units is only a logical function division. There may be other division methods in actual implementation, such as: multiple units or components can be combined, or can be integrated into another device, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the components shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0125] The above are only specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A semiconductor integrated circuit device, comprising a resistive switching layer, and a first electrode and a second electrode respectively located on two sides of the resistive switching layer and opposite to each other, characterized in that: The resistive layer includes at least two oxide films alternately formed by at least two materials, so that when a first voltage is applied, conductive filaments are generated only in the oxide film formed by a specified material. The oxide film of the resistive layer includes a portion parallel to the action direction of the first voltage. The specified material includes at least one, and the conductive filament is formed in a channel formed by the specified material.

2. The semiconductor integrated circuit device according to claim 1, wherein: The resistive switching layer includes a resistive switching layer with a trench structure.

3. The semiconductor integrated circuit device according to claim 1, wherein: The resistive switching layer includes a resistive switching layer with a planar structure.

4. The semiconductor integrated circuit device according to claim 1, wherein: The at least two materials include transition metal oxides.

5. The semiconductor integrated circuit device according to claim 4, wherein: The transition metal oxide includes hafnium oxide, zirconium oxide, titanium oxide, zinc oxide, tungsten oxide, tantalum oxide, molybdenum oxide or nickel oxide.

6. A method for manufacturing a semiconductor integrated circuit device, characterized in that: The method comprises: Obtain a base plate with metal wires; forming a first electrode on the base plate; forming a resistive switching layer on the first electrode, the resistive switching layer comprising at least two oxide thin films alternately formed of at least two materials, so that when a first voltage is applied, conductive filaments are generated only in the oxide thin films formed of designated materials, the oxide thin films of the resistive switching layer comprising a portion parallel to the action direction of the first voltage, the designated materials comprising at least one, and the conductive filaments are formed in channels formed of the designated materials; A second electrode is formed on the resistive layer so that the second electrode is opposite to the first electrode.

7. The method according to claim 6, characterized in that A resistive switching layer is formed on the first electrode, comprising: forming a first insulating layer on the first electrode; Carving a groove at a position above the first electrode in the first insulating layer to form a groove hole; At least two materials are alternately deposited layer by layer in the groove to form at least two layers of oxide films; At least two layers of oxide films above the first insulating layer are removed, and at least two layers of oxide films in the trench are retained.

8. The method according to claim 6, characterized in that A resistive switching layer is formed on the first electrode, comprising: Alternately depositing at least two materials layer by layer on the first electrode to form at least two layers of oxide thin films; The oxide film is patterned to form a resistive switching layer.

9. A method for manufacturing a semiconductor integrated circuit device, characterized in that: The method comprises: Obtain a base plate with metal wires; A convex resistive switching layer is formed on the bottom plate, wherein the resistive switching layer includes at least two oxide thin films alternately formed of at least two materials, so that when a first voltage is applied, conductive filaments are generated only in the oxide thin films formed of designated materials, the oxide thin films of the resistive switching layer include a portion parallel to the action direction of the first voltage, the designated materials include at least one, and the conductive filaments are formed in channels formed by the designated materials; Depositing an electrode material on the protruding resistive switching layer; Removing the electrode material above the resistive layer to obtain a first electrode layer and a second electrode layer respectively arranged on the left and right sides of the resistive layer; The first electrode layer and the second electrode layer are patterned to obtain a first electrode and a second electrode, so that the second electrode is opposite to the first electrode.

10. The method according to claim 9, characterized in that A convex resistive switching layer is formed on the bottom plate, comprising: At least two materials are alternately deposited layer by layer on the bottom plate to form at least two layers of oxide films; The oxide film is patterned to form a protruding resistive switching layer.

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