An OLED light-emitting device, a display screen and an electronic device

Abstract

The application provides an OLED light-emitting device, a display screen and an electronic device. The OLED light-emitting device has a pixel region and a light-transmitting region, and comprises a first electrode, a functional layer and a second electrode which are electrically connected. The functional layer is arranged between the first electrode and the second electrode. The second electrode comprises an inhibitor layer and an electrode layer. The inhibitor layer is arranged in the light-transmitting region, and the electrode layer is arranged in the pixel region. The inhibitor layer is made of a low-surface-energy material. The electrode layer is located on a side of the functional layer away from the first electrode and is electrically connected to the functional layer. By arranging the inhibitor layer with low surface energy in the light-transmitting region, the electrode layer is prevented from being formed in the light-transmitting region, so that the area of the light-transmitting region of the OLED light-emitting device can be effectively increased, and the light transmittance of the OLED light-emitting device is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to an OLED light-emitting device, a display screen and an electronic device. BACKGROUND

[0002] An organic light-emitting diode (OLED) display device has been listed as the next generation display technology with great development prospects, due to its advantages of thinness, lightness, wide viewing angle, active light-emitting, continuous adjustable light-emitting color, low cost, fast response speed, small energy consumption, low driving voltage, wide working temperature range, simple production process, high light-emitting efficiency and flexible display.

[0003] The basic structure of the OLED light-emitting device generally includes a first electrode, a functional layer and a second electrode. Since the light-emitting center of the OLED light-emitting device is located in the functional layer, at least one of the first electrode and the second electrode needs to be light-transmissive, so that the light inside the OLED light-emitting device can be emitted. In addition, the display screen is generally divided into a light-transmissive region and a non-light-transmissive region. The light-transmissive region is a pixel-free area, and the non-light-transmissive region is used for pixel light-emitting. In this way, the light transmittance of the light-transmissive region directly affects the overall light transmittance of the display screen.

[0004] Since the full-screen electronic device is an important development direction of the currently displayable electronic device, and transparent display is one of the main technologies to realize the full screen. Therefore, how to improve the transmittance of the display screen is a technical problem to be solved by those skilled in the art. SUMMARY

[0005] The present application provides an OLED light-emitting device, a display screen and an electronic device, to improve the light transmittance of the display screen.

[0006] In a first aspect, the technical scheme of the present application provides an OLED light-emitting device, which has a pixel region and a light-transmissive region. The pixel region can be used to set the pixel unit of the OLED light-emitting device, and the light-transmissive region can be used to transmit light to realize transparent display of the OLED light-emitting device.

[0007] The OLED light emitting device can include a first electrode, a functional layer and a second electrode. The functional layer is arranged between the first electrode and the second electrode and electrically connected with the first electrode and the second electrode respectively, and the light emitting center of the OLED light emitting device is located in the functional layer. The first electrode can be a structure formed by a light-transmitting material, so that the light inside the functional layer can be emitted from the side of the first electrode. In the specific arrangement of the second electrode, the second electrode includes a suppressor layer and an electrode layer. The suppressor layer is arranged in the light-transmitting area and is made of a low surface energy material. The electrode layer is arranged on the side of the functional layer away from the first electrode and is electrically connected with the functional layer. In this application, the electrode layer is usually formed by a metal material, and the suppressor layer can suppress the nucleation or film formation of the metal electrode material, so as to suppress the formation of the electrode layer in the light-transmitting area, so that the electrode layer is mainly formed in the pixel area. In addition, the electrode layer in the second electrode can also be made of a light-transmitting material, so that the light in the functional layer can be emitted from the side of the second electrode. The OLED light emitting device using the technical solution of the present application can effectively increase the area of the light-transmitting area of the OLED light emitting device, thereby improving the light transmittance of the OLED light emitting device.

[0008] In order to enable the suppressor layer to play a role in inhibiting more metal materials, in a possible implementation, the suppressor layer can be made of, but is not limited to, a fluorine-containing silane material, a fatty acid material, a thiol material, a sulfide material, a hydroxyl group-containing molecular material, or a phosphate group-containing molecular material, and the like. Low surface material, so that the applicable scenarios of the suppressor layer are wider.

[0009] In addition, the material of the electrode layer can be, but is not limited to, one or more of Ag, Cu, Mg, Au, Yb, Al and the like. In addition, the electrode layer can also be made of a composite film layer with a D / M / D structure composed of a high-transparency dielectric and a metal, so as to improve the transparency of the electrode layer, thereby facilitating the emission of light inside the functional layer.

[0010] In addition to the above structure, an interface layer can also be arranged in the second electrode. The interface layer is arranged between the first electrode and the suppressor layer. The interface layer can be made of, but is not limited to, a metal oxide material, a metal material, a semiconductor material or a nano material, so that the interface layer and the suppressor layer can be connected by chemical bonding to form a self-assembled layer. Through the interface layer, the film formation effect of the suppressor layer can be improved, and the self-assembled layer structure formed thereby is dense and stable.

[0011] In a second aspect, the present application also provides a display screen, which comprises a back plate and the OLED light-emitting device of the first aspect. The back plate comprises a substrate and a pixel definition layer disposed on the substrate, and the pixel definition layer is provided with a hollow region. When the OLED light-emitting device is disposed in the display screen, the first electrode of the OLED light-emitting device is disposed on the substrate and can be exposed from the hollow region of the pixel definition layer. The functional layer is formed in the hollow region and is electrically connected with the first electrode. The electrode layer of the second electrode is disposed on the side surface of the functional layer away from the first electrode and is electrically connected with the functional layer.

[0012] The display screen of the technical solution of the present application can effectively increase the area of the light transmission region to improve the light transmittance of the display screen. In this way, the light components such as the visible light camera and the infrared camera can be hidden under the display screen and disposed within the range of the light transmission region of the display screen. In addition, it has been verified through experiments that the display screen of the present application can meet the light transmittance requirements of optical sensors with a wavelength of 400nm-1000nm or even greater than 1000nm. Therefore, these optical sensors can be hidden under the display screen and disposed within the range of the light transmission region of the display screen, thereby facilitating the design of the full-screen display screen.

[0013] In a possible implementation, the back plate can further comprise a connecting electrode, which is disposed between the substrate and the first electrode and is electrically connected with the first electrode.

[0014] In addition, when the second electrode of the OLED light-emitting device further comprises an interface layer, the interface layer is disposed between the pixel definition layer and the inhibitor layer, and the interface layer and the inhibitor layer are connected by chemical bonding to form a dense and stable self-assembled layer.

[0015] When the interface layer is disposed on the pixel definition layer, the cross-sectional shape of the interface layer can be but is not limited to rectangular, trapezoidal, U-shaped or T-shaped. For example, when the cross-sectional shape of the interface layer is T-shaped, the interface layer comprises a first thin film layer and a second thin film layer superimposed on each other, wherein the first thin film layer is disposed between the second thin film layer and the pixel definition layer, and the projection area of the second thin film layer on the pixel definition layer is greater than the projection area of the first thin film layer on the pixel definition layer. In this implementation, the inhibitor layer can be formed on the second thin film layer by transfer printing, and by making the cross-sectional shape of the interface layer T-shaped, the surface area of the interface layer used to contact the inhibitor layer can be effectively increased, so that the setting area of the inhibitor layer can be larger to further increase the setting area of the light transmission region and improve the light transmittance of the display screen.

[0016] When the cross-sectional shape of the interface layer is U-shaped, the interface layer comprises two strip-shaped structures arranged side by side, and a groove is formed between the two strip-shaped structures. At this time, the inhibitor layer can be formed by means of inkjet printing. Specifically, ink containing inhibitor molecules is dropped into the groove of the interface layer, and after the solvent volatilizes, a dry inhibitor film layer is formed.

[0017] In addition to the above-mentioned arrangement of the interface layer, in a possible implementation manner of the present application, a pit can be arranged on the pixel definition layer, and the interface layer can be arranged in the pit. At this time, ink containing inhibitor molecules is dropped into the pit, and after the solvent volatilizes, a dry inhibitor film layer is formed.

[0018] In a third aspect, the present application also provides an electronic device, which comprises a support structure, a back shell, a printed circuit board and the flexible display screen of the second aspect, wherein the support structure is used for carrying the printed circuit board and the flexible display screen, and the printed circuit board and the flexible display screen are located on two sides of the support structure; and the back shell is located on a side of the printed circuit board away from the support structure.

[0019] In the electronic device of the present application, the electrode of the display screen can be arranged in the pixel area, so that the area of the light transmission area of the display screen is larger and the light transmittance is higher. In this way, the optical components such as the visible light camera and the infrared camera, and the optical sensor with a wavelength of 400nm-1000nm or even greater than 1000nm can be arranged in the light transmission area of the display screen, which is beneficial to realize the full-screen design of the display screen of the electronic device.

[0020] In a fourth aspect, the present application also provides a preparation method of a display screen, the display screen having a pixel area and a light transmission area, the method comprising: preparing a substrate and forming a first electrode on the substrate; forming a pixel definition layer on the first electrode, and forming a hollowed-out area in a portion of the pixel definition layer corresponding to the pixel area, the hollowed-out area exposing the first electrode; forming a functional layer in the hollowed-out area, the functional layer being electrically connected with the first electrode; forming an inhibitor layer on the pixel definition layer, the inhibitor layer being formed in the light transmission area, and the inhibitor layer being made of a low-surface-energy material; and forming an electrode layer on a side surface of the functional layer away from the substrate, the electrode layer being formed in the pixel area.

[0021] The display screen obtained by the preparation method of the display screen of the present application can inhibit the interface layer from being formed in the light transmission area through the inhibitor layer, so that the area of the light transmission area of the display screen is larger and the light transmittance is higher.

[0022] In a possible implementation manner, after the functional layer is formed in the hollowed-out area, before the inhibitor layer is formed on the pixel definition layer, the preparation method can further comprise: forming an interface layer on the pixel definition layer, the interface layer being formed in the light transmission area.

[0023] An inhibitor layer is formed on the surface of the interface layer away from the pixel definition layer, and the interface layer and the inhibitor layer are connected by chemical bonding. This improves the film formation effect of the inhibitor layer and enables the inhibitor layer and the interface to form a dense and stable self-assembled layer.

[0024] Furthermore, when forming the inhibitor layer on the interface layer, the inhibitor layer can be formed, but is not limited to, through processes such as inkjet printing, micro-contact printing, or thermal evaporation of a fine metal mask. When fabricating a display screen using the method described in this technical solution, the formation of the inhibitor layer is quite diverse, thus broadening the applicability of the display screen fabrication method. Moreover, by selecting the appropriate method for forming the inhibitor layer, processing costs can be effectively reduced. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of the structure of an OLED light-emitting device provided in an embodiment of this application;

[0026] Figure 2 The transmittance curves of three electrode materials for different wavelengths of light are shown.

[0027] Figure 3 This is a schematic diagram of the structure of a display screen provided in an embodiment of this application;

[0028] Figure 4 This is a schematic diagram of the structure of an OLED light-emitting device provided in another embodiment of this application;

[0029] Figure 5 This is a schematic diagram of the bonding process between the inhibitor layer and the interface layer according to an embodiment of this application;

[0030] Figure 6a This is a schematic diagram of the interface layer structure provided in an embodiment of this application;

[0031] Figure 6b This is a schematic diagram of the structure of a self-assembly layer provided in an embodiment of this application;

[0032] Figure 6c This is a schematic diagram of the structure of the second electrode provided in one embodiment of this application;

[0033] Figure 6d for Figure 6c The thickness curve of the second electrode in the region indicated by the dashed line in the figure;

[0034] Figure 7 This is a schematic diagram of the structure of a display screen according to another embodiment of this application;

[0035] Figures 8a to 8d This is a schematic diagram of the structure of a display screen according to another embodiment of this application;

[0036] Figure 9aA schematic diagram of the setting mode of the interface layer provided for another embodiment of the present application is shown in the figure;

[0037] Figure 9b A schematic diagram of the setting mode of the interface layer provided for another embodiment of the present application is shown in the figure;

[0038] Figures 10a to 10d A schematic diagram of the manufacturing process of the display screen provided for the embodiment of the present application is shown in the figure;

[0039] Figure 11 A schematic diagram of the structure of the electronic device provided for the embodiment of the present application is shown in the figure.

[0040] Reference signs:

[0041] 1-first electrode; 2-functional layer; 3-second electrode; 301-interface layer; 3011-first thin film layer; 3012-second thin film layer;

[0042] 302-suppressor layer; 303-electrode layer; 4-translucent region; 5-pixel region; 501-pixel; 6-back plate; 601-substrate;

[0043] 602-connection electrode; 603-insulating layer; 604-pixel definition layer; 6041-hollowed-out region; 6042-pit; 7-printing mold;

[0044] 8-display screen; 9-supporting structure; 10-back shell; 11-printed circuit board; 1101-component. DETAILED DESCRIPTION

[0045] In order to facilitate the understanding of the OLED light-emitting device provided by the embodiments of the present application, the application scenario of the OLED light-emitting device provided by the embodiments of the present application is first described below. The OLED light-emitting device can be arranged in the display screen of an electronic device such as a mobile phone, a tablet computer, a wearable device, a personal digital assistant (PDA), a television or a smart screen.

[0046] Reference Figure 1The OLED light-emitting device generally comprises a first electrode 1, a functional layer 2 and a second electrode 3 arranged in a stack. The first electrode 1 may, for example, be an anode of the OLED light-emitting device, and the second electrode 3 may, for example, be a cathode of the OLED light-emitting device. The light-emitting center for emitting light is arranged in the functional layer 2, and the light inside the OLED light-emitting device can be emitted as long as at least one side of the second electrode 3 and the first electrode 1 can transmit light. In order to make at least one side of the second electrode 3 and the first electrode 1 be able to transmit light, at least one side of the second electrode 3 and the first electrode 1 is generally made of a transparent conductive material, such as a transparent metal oxide (TCO), a semi-transparent ultrathin metal (Mg, Ag), a semi-transparent ultrathin metal alloy (Mg alloy or Ag alloy); the transparent conductive material can also be a composite film layer composed of a high-transparency medium, a metal and a high-transparency medium (which can be represented as a D / M / D structure).

[0047] Referring to Figure 2 , Figure 2 The transmittance of a metal Ag electrode (abbreviated as Ag_14nm) with a width of 14nm to light of different wavelengths is represented by a solid line; the transmittance of a composite film layer electrode (abbreviated as MoO3_5nm / Ag_14nm / MoO3_40nm) composed of MoO3 with a width of 5nm, Ag with a width of 14nm and MoO3 with a width of 40nm to light of different wavelengths is represented by a dashed line; and the transmittance of an indium tin oxide (ITO) electrode with a width of 50nm to light of different wavelengths is represented by a dot-dashed line.

[0048] Among them, indium tin oxide (ITO) has higher transparency than other transparent conductive materials. In the OLED light-emitting device, it can be continued to refer to Figure 1 Based on the film forming process characteristics of ITO, it is suitable to be arranged at the bottom of the functional layer 2 of the OLED light-emitting device (the side of the OLED light-emitting device away from the user when in use) as the first electrode 1 (anode) of the OLED light-emitting device; on the contrary, if the ITO is deposited to the top of the functional layer 2 of the OLED light-emitting device (the side of the OLED light-emitting device facing the user when in use), the organic film layer in the functional layer 2 is easy to be impacted and damaged by high-energy ITO deposition particles, so the ITO is not suitable to be the second electrode 3 (cathode) of the OLED light-emitting device.

[0049] And the metal or metal alloy film layer can be deposited on the organic layer of the functional layer 2 of the OLED light-emitting device by a vacuum thermal evaporation process, which has little damage to the organic layer. Such a cathode is the main scheme currently used in OLED display screen products.

[0050] In addition, the composite film layer with the D / M / D structure has high transparency and low sheet resistance, and can be deposited by low-temperature thermal evaporation process, and can be used as a cathode of a transparent OLED light-emitting device. Therefore, the composite film layer with the D / M / D structure is also an important development direction of the electrode of the OLED light-emitting device.

[0051] In addition, referring to Figure 3 Since the OLED display screen generally includes a light-transmitting area 4 and a non-light-transmitting area, the light-transmitting area 4 is generally a pixel-free area, and the non-light-transmitting area is generally used to set the pixels 501, i.e., the pixel area 5, and thus the light transmittance of the light-transmitting area 4 directly affects the overall light transmittance of the OLED display screen. Therefore, when the electrode of the OLED light-emitting device is set, the electrode can be set in the non-light-transmitting pixel area 5. This electrode setting technology according to areas can be referred to as electrode patterning technology, which is one of important ways to realize a high-transmittance display screen.

[0052] In order to set the electrode in the non-light-transmitting pixel area 5, a conventional method is to deposit the inhibitor material on the surface of the substrate of the OLED light-emitting device (pre-deposited on the electrode-free area) by using a fine metal mask (FMM), and then deposit metal for forming the electrode. At this time, the metal is deposited and formed only in the area without the inhibitor, and is not deposited in the area with the inhibitor. The existing inhibitor material mainly has good inhibition characteristics for magnesium (Mg), and the current OLED light-emitting device mainly uses an alloy of Mg and Ag, or a double-layer structure composed of Yb and Ag as a cathode. Therefore, the use of Mg as the cathode changes the stack structure of the OLED light-emitting device, which may affect the reliability or product yield of the OLED light-emitting device, and thus the use range of the conventional electrode forming method is limited.

[0053] The OLED light-emitting device provided in the present application aims to solve the above problems, so as to form a patterned electrode in the pixel area 5 of the corresponding display screen of the OLED light-emitting device (for reference Figure 3 ), thereby solving the problem of insufficient light transmittance of the display screen.

[0054] For reference Figure 4The OLED light emitting device provided by one embodiment of the present application comprises a first electrode 1, a functional layer 2 and a second electrode 3. The first electrode 1, the functional layer 2 and the second electrode 3 are electrically connected, the functional layer 2 is arranged between the first electrode 1 and the second electrode 3, the first electrode 1 can be an anode of the OLED light emitting device, which can be made of ITO, or a metal with high transparency (such as Mg, Ag, Au, Yb or Cu, etc.), or a metal composite film layer with high transparency (such as a Mg-Ag composite film layer, or a Yb-Ag composite film layer, etc.). The functional layer 2 is a multi-film layer structure, which can but not limited to comprise a hole injection layer, a hole transport layer, a buffer layer, a preset layer (a light emitting layer), an electron transport layer and an electron injection layer.

[0055] Continuing to refer to Figure 4 In the specific arrangement of the second electrode 3, the second electrode 3 can be a cathode of the OLED light emitting device. The second electrode 3 comprises an inhibitor layer 302 and an electrode layer 303. In order to improve the film forming effect of the inhibitor layer 302, the second electrode 3 further comprises an interface layer 301 arranged between the inhibitor layer 302 and the first electrode 1, which can but not limited to be made of a metal oxide material, a metal material, a semiconductor material or a nano material, etc. For example, the interface layer 301 can be made of molybdenum oxide (MoO3). In the formation of the interface layer 301 on the functional layer 2, it can but not limited to be made by an evaporation or a solution processing (solution processing includes spin coating, printing, inkjet printing, etc.) process.

[0056] The inhibitor layer 302 is arranged on the side of the interface layer 301 away from the functional layer 2. The inhibitor layer 302 is made of a low surface energy material, wherein the surface energy refers to the energy of the surface particles relative to the internal particles, and the surface energy is a measure of the destruction of intermolecular chemical bonds when creating the surface of a substance. The low surface energy material is a material with low surface energy, which is difficult to bond itself, and needs to be treated on the surface before bonding with other objects.

[0057] In one possible embodiment of the present application, the inhibitor layer 302 can but not limited to be made of a fluorine-containing silane material, a fatty acid material, a thiol material, a sulfide material, a hydroxyl group-containing molecule material, a phosphate group-containing molecule material, etc. Since the surface energy of the inhibitor layer 302 is low, when the surface of the inhibitor layer 302 is in contact with the interface layer 301, the surface of the inhibitor layer 302 used for bonding with the interface layer 301 can be treated first, so that the inhibitor layer 302 and the interface layer 301 form a dense and stable self-assembled layer in the form of chemical bond. The self-assembled layer can effectively inhibit the deposition of metal materials on it to form nucleation or film.

[0058] For example, referring to Figure 5The inhibitor layer 302 can be formed by using a 1H, 1H, 2H, 2H- perfluorooctyltrichlorosilane (FTS) solution, which bonds with the material of the interface layer 301 on the surface of the interface layer 301 to form a self-assembled layer of polyperfluorooctylsilane (PFTS).

[0059] Referring to Figures 6a-6c , Figures 6a-6c The forming process of the second electrode in an embodiment of the present application is shown. First, referring to Figure 6a , Figure 6a A structural diagram of the interface layer 301, which can be used as a substrate of the second electrode, is shown. Then, the inhibitor layer 302 with low surface energy is formed on the interface layer 301, referring to Figure 6b , Figure 6b The circle part in the inhibitor layer 302 represents the inhibitor layer 302, which can be formed by, but not limited to, inkjet printing, micro-contact printing (transfer printing), FMM thermal evaporation and other methods in the embodiment of the present application. Finally, the electrode layer is deposited, which can be a metal layer, referring to Figure 6c Since the inhibitor layer 301 can inhibit the nucleation or film formation of the metal, the electrode layer is selectively formed on the part outside the inhibitor layer 301.

[0060] In addition, referring to Figure 6d , Figure 6d The thickness curve of the second electrode layer in the area passed by the dashed line in Figure 6c , wherein the peak of the thickness curve corresponds to the thickness of the part of the second electrode provided with the electrode layer, and the trough corresponds to the thickness of the part without the electrode layer. In this embodiment, the thickness of the part of the second electrode provided with the electrode layer is greater than the thickness of the part without the electrode layer. It can be understood that in some other embodiments of the present application, the thickness of the part of the second electrode provided with the electrode layer can also be less than the thickness of the part without the electrode layer.

[0061] Referring to Figure 7 , in order to enable the electrode layer 303 to be formed within the set area range (non-transparent pixel area), the inhibitor layer 302 can be arranged to avoid the area, for example, arranged in the transparent area 4, so that the self-assembled layer formed by the inhibitor layer 302 and the interface layer 301 is formed in the transparent area 4, thereby realizing the patterning design of the second electrode 3.

[0062] In the specific arrangement of the electrode layer 303, the material of the electrode layer 303 can be, but not limited to, one or more of Ag, Cu, Mg, Au, Yb, Al and other metal materials. In addition, the electrode layer 303 can also adopt a composite film layer with a D / M / D structure of high transparent dielectric and metal composite to improve the transparency of the electrode layer 303, thereby facilitating the light emission in the functional layer 2. In some embodiments of the present application, as shown in Figure 4Since the interface layer 301 can be made of a material that has no inhibitory effect on metal materials, the interface layer 301 can be arranged to cover the entire surface of the OLED light-emitting device, so that the electrode layer 303 is formed on the surface of the interface layer 301 where the inhibitor layer 302 is not arranged. In this way, the step of patterning the interface layer 301 can be reduced, thereby simplifying the manufacturing process of the OLED light-emitting device.

[0063] Of course, it can be understood that, in other embodiments of the present application, as shown in Figure 7 , in order to meet the electrical connection requirements of the second electrode 3 and the functional layer 2 and other structures in the OLED light-emitting device, the interface layer 301 can also be arranged to avoid the area where the electrode layer 303 is formed, for example, only corresponding to the light transmission area.

[0064] In the OLED light-emitting device of the embodiment of the present application, referring to Figure 7 , the electrode layer 303 of the second electrode 3 can be arranged in the pixel area 5 of the OLED light-emitting device, which can effectively increase the area of the light transmission area 4 of the OLED light-emitting device, thereby improving the light transmittance. When the OLED light-emitting device is applied to a display screen, the area of the light transmission area 4 of the display screen can be effectively increased, thereby improving the light transmittance of the display screen. In this way, visible light cameras, infrared cameras and other optical components can be hidden under the display screen and arranged within the light transmission area 4 of the display screen. In addition, through experiments and verification, the display screen of the embodiment of the present application can meet the light transmittance requirements of optical sensors with a wavelength of 400nm-1000nm, or even greater than 1000nm, so these optical sensors can be hidden under the display screen and arranged within the light transmission area 4 of the display screen, thereby facilitating the design of the full-screen display screen.

[0065] Continuing to refer to Figure 7 , when the OLED light-emitting device of the embodiment of the present application is used in a display screen 8, the display screen 8 can be but not limited to a quantum dot light-emitting diode (QLED) flexible display screen 8, or an active-matrix organic light-emitting diode (AMOLED) flexible display screen 8, etc. Of course, the display screen 8 can also be a rigid display screen 8.

[0066] Continuing to refer to Figure 7The display screen 8 provided by the embodiments of the present application comprises the OLED light emitting device and a back plate 6 for inputting electrical signals. The back plate 6 generally comprises a substrate 601, a connecting electrode 602, an insulating layer 603, a pixel define layer 604 (PDL), and the like. The connecting electrode 602 is arranged on the surface of the substrate 601, the insulating layer 603 covers part of the connecting electrode 602, the first electrode 1 of the OLED light emitting device is arranged on the surface of the insulating layer 603 away from the substrate 601, and the first electrode 1 is connected with the connecting electrode 602 through a via hole on the insulating layer 603.

[0067] In addition, the pixel define layer 604 is arranged on the surface of the insulating layer 603 away from the substrate 601, and a hollow area 6041 is arranged on the pixel define layer 604 corresponding to the first electrode 1. The hollow area 6041 exposes the first electrode 1 as a pixel defining area of the display screen 8. The functional layer 2 of the OLED light emitting device can be arranged in the hollow area 6041 and electrically connected with the first electrode 1.

[0068] Continuing to refer to Figure 7 In the embodiments of the present application, the interface layer 301 can be arranged on the pixel define layer 604, and the interface layer 301 is arranged away from the hollow area 6041. The cross-sectional shape of the interface layer 301 is not limited, and for example, in the cross-section of the interface layer 301, the length of the edge of the interface layer 301 that is parallel to the surface of the pixel define layer 604 and arranged opposite to the other edge is greater than or equal to the length of the edge of the interface layer 301 that is away from the pixel define layer 604. At this time, the cross-section of the interface layer 301 can be but is not limited to a rectangle as shown in Figure 7 or a right trapezoid as shown in Figure 8a The interface layer 301 can be a photoresist film formed by using a positive photoresist (soluble in a developing solution after exposure and development). The area of the interface layer 301 can be set to be large, so as to play a role of forming a self-assembled layer in contact with the inhibitor layer 302, and also can be used for supporting the FMM when the inhibitor layer 302 is formed by using an evaporation method.

[0069] In some other embodiments of the present application, referring to Figure 8b The cross-sectional shape of the interface layer 301 can also be set to an inverted trapezoid. At this time, the interface layer 301 can be a photoresist film formed by using a negative photoresist (insoluble in a developing solution after exposure and development).

[0070] In some embodiments of the present application, referring to Figure 8cThe cross-sectional shape of the interface layer 301 can also be T-shaped. In this case, the interface layer 301 is composed of two parts, a first thin film layer 3011 disposed on the surface of the pixel definition layer 604, and a second thin film layer 3012 disposed on the first thin film layer 3011 away from the pixel definition layer 604. The first thin film layer 3011 can be made of an organic photoresist material, and the second thin film layer 3012 is an inorganic material layer disposed on the first thin film layer 3011, and the projected area of the second thin film layer 3012 on the pixel definition layer 604 is greater than the projected area of the first thin film layer 3011 on the pixel definition layer 604. In this way, the surface area of the interface layer 301 used to contact the inhibitor layer 302 can be effectively increased, so as to facilitate the increase of the light transmittance of the display screen.

[0071] Based on the arrangement of the interface layer 301 in the above embodiments, since the surface area of the interface layer 301 used to contact the inhibitor layer 302 is large, the inhibitor layer 302 can be formed on the surface of the interface layer 301 by a transfer method, but is not limited thereto.

[0072] In addition to the above arrangement, with reference to Figure 8d , the cross-sectional shape of the interface layer 301 can also be U-shaped, and the U-shaped interface layer 301 can be formed by a photoresist. Since the U-shaped interface layer 301 has a groove, the inhibitor layer 302 can be formed by an inkjet printing method. The ink containing inhibitor molecules is dropped into the groove of the interface layer 301, and after the solvent evaporates, a dry inhibitor film layer is formed.

[0073] When the cross-sectional shape of the interface layer 301 is U-shaped, with reference to Figure 9a , Figure 9a is an arrangement of the interface layer 301 in an embodiment of the present application, wherein the interface layer 301 includes two parallel strip-shaped structures, and a groove is formed between the two strip-shaped structures.

[0074] With reference to Figure 9b , in some other embodiments of the present application, a recess 6042 can be disposed on the pixel definition layer 604, and the interface layer 301 can be disposed in the recess. In this case, the ink containing inhibitor molecules is dropped into the recess 6042, and after the solvent evaporates, a dry inhibitor film layer is formed.

[0075] It can be understood that in the above Figures 8a to 8dIn the figure, the layer structure of the connecting electrode and the insulating layer is omitted, and it is mainly used for illustrating the setting mode of the interface layer 301. In addition, the setting mode of the interface layer 301 is only some exemplary description given by the embodiments of the present application, and the skilled in the art can easily obtain some deformation setting modes of the interface layer 301 on the basis of the specific setting mode of the interface layer 301 of the above-mentioned embodiments of the present application, which are all within the protection scope of the present application.

[0076] The display screen of the embodiments of the present application can meet the light transmittance requirement of the optical sensor with a wavelength of 400nm-1000nm, or even greater than 1000nm, and therefore, these optical sensors can be hidden under the display screen and arranged in the light transmission area 4 of the display screen, thereby facilitating the full-screen design of the display screen.

[0077] Next, the manufacturing method of the display screen 8 (which can be referred to Figure 7 ) with the OLED light-emitting device of the above-mentioned embodiments is introduced, so as to further understand the structure of the OLED light-emitting device and the display screen 8 of the embodiments of the present application.

[0078] Firstly, referring to Figure 10a , the substrate 601 is prepared, the first electrode 1 is formed on the substrate 601, and the functional layer 2 of the OLED light-emitting device is formed on the side of the first electrode 1 away from the substrate 601, and the functional layer 2 is connected with the first electrode 1.

[0079] Then, the interface layer 301 is formed, which can be formed on the functional layer 2 or arranged by avoiding the functional layer 2. Referring to Figure 10a , taking the example that the interface layer 301 is made of positive photoresist, when the interface layer 301 is formed, one or more layers of photoresist film are formed by using positive photoresist, and then the interface layer 301 with a rectangular or trapezoidal cross-sectional shape is formed by exposure and development. It can be understood that in some other embodiments, one or more layers of photoresist film can also be formed by using negative photoresist, and then the interface layer 301 with an inverted trapezoidal shape is formed by exposure and development. Alternatively, a first thin film layer is first formed by using an organic photoresist material; a second thin film layer is then formed on the first thin film layer by using an inorganic material; the second thin film layer is formed by dry etching; the first thin film layer is formed by exposure and development etching; the area of the second thin film layer is greater than that of the first thin film layer, so that the second thin film layer covers the first thin film layer. In addition, the interface layer 301 can also be made by, but not limited to, evaporation or solution processing technology and the like. In addition to photoresist, the interface layer 301 can also be made of other metal oxide materials, metal materials, semiconductor materials or nanomaterials, etc.

[0080] After that, referring to Figure 10bMove the printing mold 7, which has fully adhered to the inhibitor solution, above the interface layer 301, and remove it after it has made full contact with the interface layer 301. At this point, refer to... Figure 10c The inhibitor solution forms a self-assembled film layer with the interface layer 301, which can inhibit metal deposition. The inhibitor material in the inhibitor solution can be, but is not limited to, low-surface-area materials such as fluorinated silanes, fatty acids, thiols, sulfides, hydroxyl-containing molecules, and phosphate-containing molecules. Besides the above transfer method, in some embodiments of this application, inkjet printing or fine metal mask thermal evaporation processes can also be used.

[0081] Finally, refer to Figure 10d An electrode layer 303 is formed to form the second electrode 3. The material of the electrode layer 303 may be, but is not limited to, one or more of the following metallic materials: Ag, Cu, Mg, Au, Yb, Al, etc. Since the self-assembled film layer can inhibit metal deposition, the electrode layer 303 is only formed in the areas where no self-assembled film layer is provided, thereby forming a patterned second electrode 3.

[0082] The display screen obtained by the display screen manufacturing method of the present application embodiment can suppress the formation of the interface layer in the light-transmitting area through the inhibitor layer, thereby making the area of ​​the light-transmitting area of ​​the display screen larger and the light transmittance higher.

[0083] In some embodiments of this application, before forming the first electrode 1 on the substrate, reference can be made to... Figure 10d The method of manufacturing the display screen may further include forming a connecting electrode 602 and an insulating layer 603 on a substrate 601, the insulating layer 603 covering a portion of the connecting electrode 602. A first electrode 1 is formed on the side of the insulating layer 603 away from the substrate 601, and a through hole is formed on the insulating layer 603 to expose the connecting electrode 602, the first electrode 1 being electrically connected to the connecting electrode 602 through the through hole.

[0084] Additionally, before forming the functional layer 2, a pixel defining layer 604 covering the insulating layer 603 can be formed. The pixel defining layer 604 has a cut-out area, within which the functional layer 2 is disposed and electrically connected to the first electrode 1. (Refer to...) Figure 10d As can be seen, the order in which interface layer 301 and functional layer 2 are formed can be adjusted according to specific circumstances, as long as the corresponding functions can be achieved. (Refer to...) Figure 10d In one possible embodiment, the interface layer 301 is disposed on the side surface of the pixel definition layer 604 away from the substrate 601, and is disposed in a way that avoids the cutout area.

[0085] It can be understood that the forming method of the electrode in the OLED light-emitting device of the embodiment of the present application can be applied not only to the display screen 8, but also to other scenarios that require improved light transmittance, for example, to a transparent solar cell to improve its photoelectric conversion efficiency.

[0086] When the display screen 8 of the embodiment of the present application is applied to an electronic device, with reference to Figure 11 , the electronic device can include a support structure 9, a rear shell 10, and a printed circuit board 11 (PCB) in addition to the display screen 8. The support structure 9 can be, but is not limited to, a middle frame to support the printed circuit board 11 and the display screen 8. The display screen 8 and the printed circuit board 11 are located on both sides of the support structure 9, and the rear shell 10 is located on the side of the printed circuit board 11 away from the support structure 9. In addition, the electronic device can also include a component 1101 disposed on the PCB, which can be, but is not limited to, disposed on the side of the PCB facing the support structure 9.

[0087] In the electronic device of the embodiment of the present application, the electrodes of the display screen 8 can be disposed in the pixel area of the display screen 8, so that the area of the light transmission area of the display screen 8 is large and the light transmittance is high. In this way, optical components such as visible light cameras and infrared cameras, as well as optical sensors with wavelengths of 400nm-1000nm, or even greater than 1000nm, can be disposed within the light transmission area of the display screen 8, which is conducive to realizing the full-screen design of the display screen 8 of the electronic device.

[0088] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily think of changes or replacements within the technical scope disclosed in the present application, which should be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. An OLED light-emitting device having a pixel region and a light-transmitting region, characterized by, The OLED light-emitting device comprises a first electrode, a functional layer and a second electrode which are electrically connected, wherein: The functional layer is arranged between the first electrode and the second electrode; The second electrode comprises an inhibitor layer and an electrode layer, the inhibitor layer is arranged in the light-transmitting area and is made of a low surface energy material; The electrode layer is arranged in the pixel area and is located on the side of the functional layer away from the first electrode and is electrically connected with the functional layer; The second electrode further comprises an interface layer, the interface layer is arranged between the first electrode and the inhibitor layer, and the interface layer is connected with the inhibitor layer by chemical bonding; The interface layer comprises a first thin film layer and a second thin film layer which are arranged in a stack, the first thin film layer is arranged between the second thin film layer and the pixel definition layer, and the projection area of the second thin film layer on the pixel definition layer is greater than the projection area of the first thin film layer on the pixel definition layer; or, the interface layer comprises a groove.

2. The OLED light emitting device according to claim 1, wherein, The material of the inhibitor layer is a fluorine-containing silane material, a fatty acid material, a thiol material, a sulfide material, a hydroxyl group-containing molecule material, or a phosphate group-containing molecule material.

3. The OLED light-emitting device according to claim 1 or 2, wherein the first organic layer is a hole-transporting layer. The material of the electrode layer is one or more of Ag, Cu, Mg, Au, Yb and Al.

4. The OLED light-emitting device according to claim 1 or 2, wherein the first organic layer is a hole-transporting layer. The material of the interface layer is a metal oxide material, a metal material, a semiconductor material or a nano material.

5. A display screen, characterized by The back plate comprises a substrate and a pixel definition layer arranged on the substrate, and the OLED light-emitting device as claimed in any one of claims 1-4, wherein: The first electrode of the OLED light-emitting device is arranged on the substrate, the pixel definition layer is provided with a hollow area exposing the first electrode, the functional layer is arranged in the hollow area and is electrically connected with the first electrode; The inhibitor layer is arranged on the side surface of the pixel definition layer away from the substrate, and the electrode layer is arranged on the side surface of the functional layer away from the substrate and is electrically connected with the functional layer. The back plate further comprises a connecting electrode arranged between the substrate and the first electrode and electrically connected with the first electrode.

6. The display screen of claim 5, wherein, The cross-sectional shape of the interface layer is rectangular, trapezoidal, U-shaped or T-shaped.

7. A display screen as claimed in claim 5 or 6, characterized in that The cross-sectional shape of the interface layer is T-shaped, and the interface layer comprises a first thin film layer and a second thin film layer which are arranged in a stack, the first thin film layer is arranged between the second thin film layer and the pixel definition layer, and the projection area of the second thin film layer on the pixel definition layer is greater than the projection area of the first thin film layer on the pixel definition layer.

8. The display screen of claim 7, wherein, The cross-sectional shape of the interface layer is U-shaped, and the interface layer comprises two strip-shaped structures arranged side by side, and a groove is formed between the two strip-shaped structures.

9. The display screen of claim 7, wherein, The pixel definition layer is provided with a pit, and the interface layer is arranged in the pit.

10. The display screen of claim 5 or 6, wherein, The display screen comprises a support structure, a rear shell, a printed circuit board and the display screen as claimed in any one of claims 5-10, wherein:

11. An electronic device, comprising: ​ The support structure is used for bearing the printed circuit board and the display screen, and the printed circuit board and the display screen are arranged on two sides of the support structure. The rear shell is located on a side of the printed circuit board away from the support structure.

12. A method of manufacturing a display panel having a pixel region and a light-transmissive region, characterized by, The method comprises: Preparation of a substrate and formation of a first electrode on the substrate; Formation of a pixel definition layer on the first electrode, and formation of a hollowed-out area in a portion of the pixel definition layer corresponding to the pixel area, which exposes the first electrode; Formation of a functional layer in the hollowed-out area, which is electrically connected with the first electrode; Formation of an inhibitor layer on the pixel definition layer, which is formed in the light-transmitting area, and the inhibitor layer is made of a low-surface-energy material; Formation of an electrode layer on a side surface of the functional layer away from the substrate, which is formed in the pixel area; After the formation of the functional layer in the hollowed-out area, before the formation of the inhibitor layer on the definition layer, the method further comprises: formation of an interface layer on the pixel definition layer, which is formed in the light-transmitting area; the interface layer comprises a first thin film layer and a second thin film layer which are superimposed, the first thin film layer is arranged between the second thin film layer and the pixel definition layer, and the projection area of the second thin film layer on the pixel definition layer is greater than the projection area of the first thin film layer on the pixel definition layer; or the interface layer comprises a groove; The inhibitor layer is formed on a side surface of the interface layer away from the pixel definition layer, and the interface layer and the inhibitor layer are connected by chemical bonding.

13. The production method according to claim 12, wherein The inhibitor layer is formed by inkjet printing, micro-contact printing, or fine metal mask thermal evaporation process.

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