Wafer electroplating fixture and wafer electroplating device

Abstract

A wafer electroplating fixture and a wafer electroplating device provided by an embodiment of the present invention relate to the technical field of wafer electroplating. The wafer electroplating fixture includes a wafer storage table, a sealing ring, a conductive ring, and a cover plate. The wafer storage table is used for placing wafers. The sealing ring and the conductive ring are arranged between the wafer storage table and the cover plate. The cover plate is connected to the wafer storage table. A first adsorption table is provided on the wafer storage table, and the first adsorption table is used for adsorbing and fastening a first wafer. The wafer electroplating fixture has better sealing performance, which is beneficial to improving the electroplating effect and the quality of wafer electroplating.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer electroplating, and more particularly, to a wafer electroplating fixture and a wafer electroplating device. Background Art

[0002] In the prior art, wafer electroplating mainly uses a hanging tool method. The cover plate of the hanging tool is fastened with screws. There are situations such as slipping of the screw threads during long-term tightening of the screws. In addition, when the wafer surface is fixed, due to uneven force during tightening, the sealing performance is likely to be poor, resulting in poor wafer electroplating effect and affecting product quality. Summary of the Invention

[0003] An object of the present invention is to provide a wafer electroplating fixture and a wafer electroplating device, which can improve the sealing performance after wafer fixation, thereby improving the wafer electroplating effect and enhancing product performance and quality.

[0004] Embodiments of the present invention are implemented as follows:

[0005] In a first aspect, the present invention provides a wafer electroplating fixture, including a wafer storage table, a sealing ring, a conductive ring, and a cover plate. The wafer storage table is used for placing wafers. The sealing ring and the conductive ring are arranged between the wafer storage table and the cover plate, and the cover plate is connected to the wafer storage table. A first adsorption table is provided on the wafer storage table, and the first adsorption table is used for adsorbing and fastening a first wafer.

[0006] In an alternative embodiment, the cover plate and the wafer storage table are fixed by pressing.

[0007] In an alternative embodiment, the cover plate is sleeved on the wafer storage table to achieve clamping connection between the cover plate and the wafer storage table.

[0008] In an alternative embodiment, the cover plate includes a first annular inner surface, and the wafer storage table includes a first annular outer surface. The first annular inner surface is sleeved on the first annular outer surface, and the first annular inner surface and the first annular outer surface are in mutual abutment.

[0009] In an alternative embodiment, a clamping groove is provided on the cover plate, and a convex block cooperating with the clamping groove is provided on the wafer storage table. The clamping groove and the convex block are in clamping connection.

[0010] In an alternative embodiment, a first adsorption groove is provided on one side of the first adsorption table for storing the first wafer. In a state where the cover plate and the wafer storage table are in clamping connection, the first adsorption groove is used for adsorbing the wafer.

[0011] In an alternative embodiment, a support block is provided in the first adsorption groove, and the height of the support block is not higher than the notch of the first adsorption groove.

[0012] In an alternative embodiment, the support block includes a first support block and a second support block. The first support block is disposed adjacent to the sidewall of the first adsorption groove, and the second support block is disposed in the middle of the first adsorption groove.

[0013] In an alternative embodiment, a first sunk platform and a second sunk platform are provided on the wafer storage table. The second sunk platform is higher than the first sunk platform. The first sunk platform is used for placing the first wafer, and the second sunk platform is used for installing the sealing ring and the conductive ring.

[0014] In an alternative embodiment, the first adsorption platform is provided on the first sunk platform.

[0015] In an alternative embodiment, a first drainage port is provided on the second sunk platform. The first drainage port is used for communicating with external electroplating solution.

[0016] In an alternative embodiment, the sealing ring or the conductive ring is provided with a clamping block. The clamping block is disposed in the first drainage port to be clamped with the second sunk platform.

[0017] In an alternative embodiment, the conductive ring is disposed on a side of the sealing ring away from the first wafer. A first through hole is formed in the sealing ring. The conductive ring is provided with the clamping block. The position of the clamping block corresponds to that of the first through hole. After the clamping block passes through the first through hole, it cooperates with the first drainage port.

[0018] In an alternative embodiment, a third sunk platform is provided on the wafer storage table. The third sunk platform is higher than the second sunk platform. The third sunk platform is used for placing a second wafer.

[0019] In an alternative embodiment, a second adsorption platform is provided on the third sunk platform. A second adsorption groove is provided on the second adsorption platform. The second adsorption groove is used for adsorbing and fixing the second wafer.

[0020] In an alternative embodiment, a second drainage port is formed in the third sunk platform. The second drainage port is used for communicating with external electroplating solution.

[0021] In an alternative embodiment, a base is further included. The wafer storage table is provided on the base. A medicine trough is provided on the base. The medicine trough is communicated with the wafer storage table.

[0022] In an alternative embodiment, a lead groove is provided on the base. One end of the lead groove is communicated with the medicine trough, and the other end is communicated with the wafer storage table.

[0023] In an alternative embodiment, the side walls of the lead grooves protrude from the base, and the cover plate is snap-fitted to the side walls of the lead grooves.

[0024] In an alternative embodiment, the cover plate is made of a transparent material.

[0025] In a second aspect, the present invention provides a wafer electroplating apparatus, comprising an electroplating machine platform and the wafer electroplating fixture as described in any one of the foregoing embodiments, wherein the wafer storage table is disposed on the electroplating machine platform.

[0026] The beneficial effects of the embodiments of the present invention are as follows:

[0027] For the wafer electroplating fixture provided by the embodiments of the present invention, a first adsorption table is disposed on the wafer storage table, and the first adsorption table is used for placing a wafer. In a state where the wafer storage table and the cover plate are connected, the wafer is tightly pressed against the first adsorption table, that is, a negative pressure is formed in the first adsorption table to firmly adsorb the wafer, so that the sealing performance after the wafer is installed is better, thereby improving the structural sealing performance of the wafer electroplating fixture and enhancing the electroplating effect and quality.

[0028] The wafer electroplating apparatus provided by the embodiments of the present invention comprises an electroplating machine platform and the above-described wafer electroplating fixture. The wafer electroplating fixture can be conveniently matched with the electroplating machine platform, is more convenient to operate, and has high electroplating efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can be obtained based on these drawings without creative efforts.

[0030] Figure 1 is an exploded structural schematic diagram of the wafer electroplating fixture provided by the embodiments of the present invention;

[0031] Figure 2 is a structural schematic diagram of the base of the wafer electroplating fixture provided by the embodiments of the present invention;

[0032] Figure 3 is Figure 2 a partial enlarged schematic diagram at A in

[0033] Figure 4 is Figure 2 a partial enlarged schematic diagram at B in

[0034] Figure 5 is a structural schematic diagram of the sealing ring of the wafer electroplating fixture provided by the embodiments of the present invention;

[0035] Figure 6 Schematic structural diagram of the conductive ring of the wafer electroplating fixture provided by the embodiment of the present invention;

[0036] Figure 7 Schematic structural diagram of the cover plate of the wafer electroplating fixture provided by the embodiment of the present invention;

[0037] Figure 8 Another schematic structural diagram of the wafer electroplating fixture provided by the embodiment of the present invention.

[0038] Reference numerals: 10 - base; 20 - cover plate; 210 - card slot; 30 - sealing ring; 310 - first through hole; 40 - conductive ring; 410 - clamping block; 110 - wafer storage table; 111 - through hole; 101 - wafer; 120 - chemical solution tank; 130 - lead wire groove; 131 - side wall; 140 - second through hole; 150 - first sunk platform; 151 - first adsorption platform; 152 - first adsorption groove; 153 - support block; 154 - first support block; 155 - second support block; 160 - second sunk platform; 161 - first drainage port; 170 - third sunk platform; 171 - second adsorption platform; 173 - second drainage port. Detailed implementation manners

[0039] To make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Apparently, the described embodiments are some, but not all, of the embodiments of the present invention. Usually, the components of the embodiments of the present invention described and illustrated in the accompanying drawings here can be arranged and designed in various different configurations.

[0040] Therefore, the detailed description of the embodiments of the present invention provided in the accompanying drawings below is not intended to limit the scope of the claimed present invention, but merely represents selected embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the scope of protection of the present invention.

[0041] It should be noted that: similar reference numerals and letters denote similar items in the following drawings. Therefore, once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0042] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the inventive product is customarily placed during use. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention. In addition, the terms "first", "second", "third", etc. are only used for descriptive distinction and cannot be construed as indicating or implying relative importance.

[0043] In addition, terms such as "horizontal" and "vertical" do not mean that the components are required to be absolutely horizontal or hanging vertically, but can be slightly inclined. For example, "horizontal" only means that its direction is more horizontal relative to "vertical", and does not mean that the structure must be completely horizontal, but can be slightly inclined.

[0044] In the description of the present invention, it should also be noted that unless otherwise clearly specified and limited, the terms "set", "installed", "connected", "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

[0045] With the rapid development of the semiconductor industry, the requirements for wafer electroplating are also getting higher and higher. Currently, wafer electroplating mainly uses fixtures for electroplating. In the fixture structure, most of the upper covers are fastened with screws. After long-term tightening of the screws, the situation of slipping teeth is likely to occur, resulting in poor structural sealing performance. Secondly, when fixing the wafer surface, due to slipping teeth or other reasons, the wafer is unevenly stressed during tightening, which is also likely to cause poor sealing, and then lead to problems such as poor electroplating effect and wafer breakage. In addition, after each electroplating is completed, the upper cover needs to be opened to detect the electroplating situation on the wafer surface. If the electroplating situation is not good and rework is required, the fixture needs to be reinstalled. The installation and disassembly operations of the fixture are troublesome, which will waste a lot of time and seriously affect the electroplating efficiency.

[0046] In order to overcome at least one defect in the prior art, the wafer 101 electroplating fixture provided by the embodiment of the present invention can improve the sealing performance of the wafer 101, and thus improve the electroplating effect and quality.

[0047] Please refer to Figure 1, this embodiment provides a wafer electroplating fixture, including a wafer storage table 110, a sealing ring 30, a conductive ring 40 and a cover plate 20. The wafer storage table 110 is used for placing the wafer 101. The sealing ring 30 and the conductive ring 40 are arranged between the wafer storage table 110 and the cover plate 20, and the cover plate 20 is connected to the wafer storage table 110. A first adsorption table 151 is provided on the wafer storage table 110. The first adsorption table 151 is used to form a negative pressure to adsorb the wafer 101 when the cover plate 20 is connected to the wafer storage table 110. By setting the first adsorption table 151, the wafer 101 can be better fixed, so as to improve the sealing performance of the wafer 101 and the entire fixture, and further improve the electroplating effect.

[0048] Please refer to Figures 2 to 4 , optionally, a first adsorption groove 152 is provided on the side of the first adsorption table 151 for storing the wafer 101. When the cover plate 20 is clamped with the wafer storage table 110, the first adsorption groove 152 is used to adsorb the wafer 101. It is easy to understand that the wafer 101 is placed at the notch of the first adsorption groove 152 and covers the notch of the first adsorption groove 152. When the cover plate 20 is connected to the wafer storage table 110, the cover plate 20 applies a certain pressure to the wafer storage table 110, and this pressure can act on the surface of the wafer 101. When squeezing the surface of the wafer 101, the air in the first adsorption groove 152 will be squeezed out, similar to forming a negative pressure in the first adsorption table 151, and the wafer 101 is tightly adsorbed on the first adsorption table 151, with a better fixing effect on the wafer 101 and better sealing performance of the entire fixture. It should be understood that the first adsorption table 151 can be made of materials such as silica gel. When squeezing the surface of the wafer 101, the first adsorption table 151 allows a certain amount of deformation to facilitate the extrusion of the air in the first adsorption groove 152, which is beneficial to forming a negative pressure environment.

[0049] Of course, in other optional embodiments, the first adsorption table 151 can also be made of metal, plastic or other slightly harder materials, which are not specifically limited here. As long as under the action of the pressure applied by the cover plate 20, the wafer 101 is squeezed and at least part of the air in the first adsorption groove 152 can be discharged, that is, the air in the first adsorption groove 152 can be partially or completely discharged to generate a greater adsorption force, and the adsorption and fixation of the wafer 101 are more reliable. Optionally, the notch of the first adsorption groove 152 can be in a flared shape, that is, the notch size is larger than the bottom size, so as to facilitate the discharge of the air in the groove during the extrusion process. Of course, the notch size of the first adsorption groove 152 can also be equal to the bottom size, which is not specifically limited here.

[0050] Optionally, a support block 153 is provided in the first adsorption tank 152, and the height of the support block 153 is not higher than the notch of the first adsorption tank 152. By providing the support block 153, it is beneficial to prevent the deformation of the side wall of the first adsorption tank 152 from being too large and collapsing. In this embodiment, the support block 153 includes a first support block 154 and a second support block 155. The first support block 154 is disposed close to the side wall 131 of the first adsorption tank 152, and the second support block 155 is disposed in the middle of the first adsorption tank 152. The setting of the first support block 154 can play a certain supporting role for the side wall 131 of the first adsorption tank 152, preventing the deformation of the side wall 131 from being too large when the first adsorption tank 152 is squeezed and causing the side wall 131 to collapse; the second support block 155 can play a certain supporting and protecting role for the wafer 101, preventing the wafer 101 from being damaged due to excessive deformation during the squeezing process. Of course, the first support block 154 can also play a certain supporting and protecting role for the wafer 101. The first support block 154 and the second support block 155 can be evenly spaced, so that the wafer 101 is more evenly stressed. The number of the first support block 154 and the second support block 155 can be flexibly set according to the actual situation, and no specific limitation is made here.

[0051] In other alternative embodiments, the first adsorption table 151 can also be provided with a vacuum suction port. The wafer 101 covers the vacuum suction port, and a negative pressure environment is formed in the first adsorption tank 152 by pumping vacuum through the vacuum suction port, so as to realize reliable fixation of the wafer 101 and enhance the sealing performance of the structure, thereby improving the electroplating effect and electroplating quality of the wafer 101.

[0052] Optionally, a first sunk platform 150 and a second sunk platform 160 are provided on the wafer storage table 110. The second sunk platform 160 is higher than the first sunk platform 150. The first sunk platform 150 is used to place the first wafer 101, and the second sunk platform 160 is used to install the sealing ring 30 and the conductive ring 40. In this embodiment, a through hole 111 is opened in the middle of the wafer storage table 110. The first sunk platform 150 and the second sunk platform 160 are respectively disposed on the hole wall of the through hole 111. Since most wafers 101 are circular, the through hole 111 in this embodiment is a circular hole, and the first sunk platform and the second sunk platform 160 are respectively in a circular ring shape. The diameter of the second sunk platform 160 is larger than the diameter of the first sunk platform 150. Of course, in some other embodiments, the shapes of the through hole 111, the first sunk platform 150 and the second sunk platform 160 are not limited to circular, and can also be rectangular, diamond-shaped, polygonal or any other shape. In this embodiment, a first adsorption table 151 is provided on the first sunk platform 150. The number of the first adsorption tables 151 is multiple, and they are evenly distributed in a ring along the first sunk platform 150, so that the wafer 101 is more evenly stressed and the sealing effect is better.

[0053] Optionally, a first drainage port 161 is provided on the second sunk platform 160. The first drainage port 161 is used to communicate with external electroplating solution. In this embodiment, the wafer 101 electroplating fixture further includes a base 10. The wafer storage table 110 is arranged on the base 10. A solution tank 120 is provided on the base 10. The solution tank 120 communicates with the wafer storage table 110. Optionally, a lead groove 130 is further provided on the base 10. One end of the lead groove 130 communicates with the solution tank 120, and the other end communicates with the wafer storage table 110. In this embodiment, the end of the lead groove 130 far from the solution tank 120 communicates with the first drainage port 161. The solution tank 120 is used to store and collect electroplating solution. The electroplating solution reaches the first drainage port 161 through the lead groove 130. Under the action of the current of the conductive ring 40, the electroplating solution is drained to the surface of the wafer 101 to realize electroplating of the wafer 101. It can be understood that the number of the first drainage ports 161 can be one or more. If the number of the first drainage ports 161 is more than one, the multiple first drainage ports 161 are evenly spaced in a ring shape along the second sunk platform 160. Each first drainage port 161 communicates with the lead groove 130 respectively. The setting of the multiple first drainage ports 161 can make the distribution of the electroplating solution more uniform, the electroplating effect better, and the electroplating efficiency higher.

[0054] Optionally, the first drainage port 161 can be inclined, that is, the end of the first drainage port 161 close to the through hole 111 is lower, and the end close to the lead groove 130 is higher. This is beneficial to accelerating the flow of the electroplating solution and ensuring sufficient electroplating solution.

[0055] Please refer to Figure 5 and Figure 6 As shown in, a clamping block 410 is provided on the sealing ring 30 or the conductive ring 40. The clamping block 410 is arranged in the first drainage port 161 to be clamped with the second sunk platform 160. That is, the clamping block 410 cooperates with the first drainage port 161 to improve the structural sealing performance. The first wafer 101 is placed on the first sunk platform 150. A sealing ring 30 and a conductive ring 40 are sequentially arranged on the side of the first wafer 101 far from the first sunk platform 150. That is, the sealing ring 30 is arranged between the conductive ring 40 and the first wafer 101, that is, the conductive ring 40 is arranged on the side of the sealing ring 30 far from the first wafer 101. Optionally, a first through hole 310 is opened on the sealing ring 30. The conductive ring 40 is provided with a clamping block 410. The position of the clamping block 410 corresponds to that of the first through hole 310. After passing through the first through hole 310, the clamping block 410 cooperates with the first drainage port 161. The cooperation between the clamping block 410 and the first drainage port 161 can be understood as that the clamping block 410 completely fills the first drainage port 161, or the clamping block 410 partially fills the first drainage port 161, leaving a certain gap for the conductive lead and the electroplating solution to pass through.

[0056] In other alternative embodiments, a conductive ring 40 and a sealing ring 30 may also be sequentially disposed on the surface of the wafer 101, that is, the conductive ring 40 is disposed between the sealing ring 30 and the wafer 101. In this way, a clamping block 410 is provided on the conductive ring 40, and the clamping block 410 is directly snapped into the first drainage port 161, and the first through hole 310 may be omitted on the sealing ring 30. Alternatively, a clamping block 410 is provided on the sealing ring 30, and a second through hole 140 is opened on the conductive ring 40. After the clamping block 410 passes through the second through hole 140, it cooperates with the first drainage port 161 for clamping, and a good sealing effect can also be achieved, which is not specifically limited here.

[0057] Optionally, the wafer storage table 110 is press-fitted and fixed to the cover plate 20. Press-fitting and fixing can avoid the thread slipping phenomenon that occurs in screw fixing in the prior art, the fixing is more reliable, and the sealing performance is better. Secondly, the operation of press-fitting and fixing is simpler, and no additional tools such as screwdrivers are required, making the connection between the cover plate 20 and the wafer storage table 110 more convenient, with high connection efficiency. When taking out or placing the wafer 101, the disassembly and assembly efficiency of the jig is higher. The press-fitting and fixing includes but is not limited to snap connection or socket connection, etc. For example, the cover plate 20 is sleeved on the wafer storage table 110 to achieve snap connection between the cover plate 20 and the wafer storage table 110. In this embodiment, the cover plate 20 includes a first annular inner surface, and the wafer storage table 110 includes a first annular outer surface. The first annular inner surface is sleeved on the first annular outer surface, and the first annular inner surface and the first annular outer surface are in mutual abutment. For example, the first annular inner surface and the first annular outer surface are connected by transition fit, clearance fit or interference fit, etc.

[0058] Please refer to Figure 7 , optionally, a clamping groove 210 is provided on the cover plate 20, and a convex block cooperating with the clamping groove 210 is provided on the wafer storage table 110. The clamping groove 210 and the convex block are snap-connected to achieve press-fitting and fixing of the cover plate 20 and the wafer storage table 110. In this embodiment, the side wall 131 of the lead groove 130 protrudes from the base 10, and the position of the clamping groove 210 on the cover plate 20 is adapted to the position of the lead groove 130, so as to facilitate the clamping and fixing of the clamping groove 210 and the side wall 131 of the lead groove 130 during the press-fitting process of the cover plate 20 and the wafer storage table 110. Optionally, two opposite side walls 131 on the lead groove 130 are both snapped into the clamping groove 210 of the cover plate 20, that is, the cover plate 20 and the side wall 131 of the lead groove 130 (see Figure 8)Snap connection. With this arrangement, there is no need to separately design a holding structure, making the structure more compact, the processing and manufacturing of the jig more convenient and efficient, and further improving the structural sealing of the jig, making the structure more stable and reliable. Moreover, this fixed connection method is easy to operate, has a high assembly and disassembly efficiency, and is conducive to improving the electroplating efficiency. Of course, in other alternative embodiments, the cover plate 20 and the wafer storage table 110 can also adopt other connection methods. For example, one of them can be provided with an internal thread and the other with an external thread, and the fixation is achieved through the screwing and matching of the internal thread and the external thread. Another example is that hooks are provided on the cover plate 20 and grooves are provided on the wafer storage table 110, and the hooks extend into the grooves to achieve a snap-fit.

[0059] Optionally, a second through hole 140 is further provided on the base 10. The second through hole 140 is used to cooperate with the electroplating machine table so that the base 10 can be installed on the electroplating machine table.

[0060] Optionally, the cover plate 20 is made of a transparent material. In this way, without disassembling the cover plate 20, the electroplating situation on the surface of the wafer 101 can be observed, avoiding the operation of reinstalling and disassembling the jig when the wafer 101 needs to be repaired and replated, saving time and effort and a large amount of time.

[0061] Please refer to Figure 8 , optionally, a third sunk platform 170 is provided on the wafer storage table 110. The third sunk platform 170 is higher than the second sunk platform 160, and the third sunk platform 170 is used to place the second wafer 101. The diameter of the third sunk platform 170 is larger than the diameter of the second sunk platform 160. The third sunk platform 170 can place wafers 101 with larger diameter sizes, that is, the size of the second wafer 101 is larger than the size of the first wafer 101. By setting the third sunk platform 170, electroplating of wafers 101 with different sizes can be achieved, with a wider range of use, more flexible applicable scenarios, better compatibility, and the ability to electroplate two wafers 101 simultaneously, improving the electroplating efficiency of the wafers 101.

[0062] Similarly, a second adsorption platform 171 is provided on the third sunk platform 170, and a second adsorption groove is provided on the second adsorption platform 171. The second adsorption groove is used to adsorb and fix the second wafer 101. The first support block 154 and the second support block 155 can be arranged in the second adsorption groove to support and protect the groove wall of the second adsorption groove and the second wafer 101. The structure and function of the second adsorption platform 171 are the same as those of the first adsorption platform 151, and will not be elaborated here.

[0063] A second drainage opening 173 is provided in the third sunken platform 170. The second drainage opening 173 is used to communicate with external electroplating solution. Optionally, the number of the second drainage openings 173 is one or more. If the number of the second drainage openings 173 is multiple, the multiple second drainage openings 173 are respectively communicated with the lead grooves 130, and the multiple second drainage openings 173 are evenly spaced along the circumferential direction of the third sunken platform 170 to ensure sufficient electroplating solution, improve electroplating efficiency and quality. The structure and function of the second drainage opening 173 are similar to those of the first drainage opening 161, and will not be elaborated here. Optionally, the position of the first drainage opening 161 corresponds to the position of the second drainage opening 173, that is, the first drainage opening 161 and the second drainage opening 173 can be communicated, which is convenient for the routing of the conductive lead and the circulation of the electroplating solution, and the electroplating effect is better. It can be understood that the conductive lead is electrically connected to the conductive ring 40, and can guide the electroplating solution to the conductive ring 40, and then reach the surface of the wafer 101 to realize electroplating of the wafer 101.

[0064] During the installation process, the first wafer 101 is placed on the first sunken platform 150, the sealing ring 30 and the conductive ring 40 are sequentially placed on the second sunken platform 160, and the second wafer 101 is placed on the third sunken platform 170. Among them, the first wafer 101 is placed in a positive direction, and the second wafer 101 is placed in a reverse direction. In this way, the first wafer 101 and the second wafer 101 can be electroplated simultaneously, and the electroplating efficiency is higher. Optionally, clamping blocks 410 can be respectively arranged on both sides of the conductive ring 40. The clamping block 410 on one side passes through the first through hole 310 on the sealing ring 30 and is clamped with the first drainage opening 161, and the clamping block 410 on the other side is clamped with the second drainage opening 173. In this way, both the sealing performance of the structure can be improved and sufficient electroplating solution can be ensured, further improving the electroplating effect and quality.

[0065] It can be understood that the wafer 101 electroplating fixture can electroplate the first wafer 101 alone, electroplate the second wafer 101 alone, or electroplate the first wafer 101 and the second wafer 101 simultaneously. Similarly, a fourth sunken platform and a fifth sunken platform can be further arranged on the wafer storage table 110. The fourth sunken platform is used to install the third wafer 101, and the fifth sunken platform is used to install the sealing ring 30 and the conductive ring 40 to realize electroplating of more wafers 101 of different sizes, with more applicable scenarios and higher electroplating efficiency, which will not be specifically limited here.

[0066] In this embodiment, when the conductive ring 40 is powered on, the electroplating solution sequentially passes through the solution tank 120, the lead groove 130, the first drainage port 161, and the second drainage port 173, and finally reaches the surface of the wafer 101 through the conductive ring 40, realizing the electroplating of the wafer 101. Optionally, if the first wafer 101 and the second wafer 101 are electroplated simultaneously, a sealing ring 30 can be additionally provided on the third sink 170 to better seal the second wafer 101, thereby improving the sealing performance of the entire fixture and being beneficial to improving the electroplating effect of the wafer 101.

[0067] An embodiment of the present invention further provides a wafer 101 electroplating device, including an electroplating machine platform and the above-mentioned wafer 101 electroplating fixture, and the wafer storage table 110 is arranged on the electroplating machine platform. This wafer 101 electroplating device is convenient for electroplating the wafer 101, has high disassembly and assembly efficiency, high electroplating efficiency, good electroplating effect, and strong versatility.

[0068] In summary, the wafer 101 electroplating fixture and the wafer 101 electroplating device provided by the embodiments of the present invention have the following beneficial effects:

[0069] The wafer 101 electroplating fixture and the wafer 101 electroplating device provided by the present invention are provided with a first sink 150 and a third sink 170 on the wafer storage table 110, which can electroplate the first wafer 101 and the second wafer 101 simultaneously, and can also be applicable to the electroplating of wafers 101 of different sizes, with high electroplating efficiency and good compatibility. First adsorption grooves 152 and second adsorption grooves are respectively arranged on the first sink 150 and the third sink 170 to improve the installation sealing performance of the wafer 101, with better sealing performance and more stable and reliable installation of the wafer 101. Support blocks 153 are respectively arranged in the first adsorption groove 152 and the second adsorption groove to prevent the side walls 131 of the first adsorption groove 152 and the second adsorption groove from collapsing, and at the same time can also support and protect the wafer 101. The cover plate 20 and the wafer storage table 110 are fixed by pressing, which is convenient for disassembly and assembly, has good sealing performance, reliable structure, more uniform force on the wafer 101, high electroplating efficiency, and better electroplating quality. The cover plate 20 is made of a transparent material, realizing the visualization of the electroplating of the wafer 101. It is not necessary to disassemble the fixture to observe the electroplating situation on the surface of the wafer 101, and it is not necessary to reinstall the fixture when re-electroplating is required, with simpler operation, time-saving and labor-saving, and greatly improving the electroplating efficiency of the wafer 101.

[0070] The above are only the preferred embodiments of the present invention and are not used to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A wafer electroplating fixture, characterized in that, It includes a wafer storage table, a sealing ring, a conductive ring and a cover plate. The wafer storage table is used for placing wafers. The sealing ring and the conductive ring are arranged between the wafer storage table and the cover plate, and the cover plate is connected to the wafer storage table. A first adsorption table is provided on the wafer storage table, and the first adsorption table is used to form a negative pressure to adsorb the wafer when the cover plate is connected to the wafer storage table. A through hole is opened in the middle of the wafer storage table, a first sinking platform and a second sinking platform are respectively arranged on the hole wall of the through hole, and a first adsorption table is provided on the first sinking platform. A first adsorption groove is provided on one side of the first adsorption table for storing the wafer. When the cover plate is clamped with the wafer storage table, the first adsorption groove is used to adsorb the wafer. A support block is arranged in the first adsorption groove, and the height of the support block is not higher than the notch of the first adsorption groove. The support block includes a first support block and a second support block. The first support block is arranged close to the side wall of the first adsorption groove, and the second support block is arranged in the middle of the first adsorption groove.

2. The wafer electroplating fixture according to claim 1, wherein, The second sinking platform is higher than the first sinking platform. The first sinking platform is used for placing the first wafer, and the second sinking platform is used for installing the sealing ring and the conductive ring.

3. The wafer electroplating fixture according to claim 2, characterized in that, A first drainage port is provided on the second sinking platform, and the first drainage port is used to communicate with external electroplating solution.

4. The wafer electroplating fixture according to claim 3, wherein, The sealing ring or the conductive ring is provided with a clamping block, and the clamping block is arranged in the first drainage port to be clamped with the second sinking platform.

5. The wafer electroplating fixture according to claim 4, characterized in that, The conductive ring is arranged on the side of the sealing ring away from the first wafer. A first through hole is opened in the sealing ring. The conductive ring is provided with the clamping block, and the position of the clamping block corresponds to that of the first through hole. The clamping block passes through the first through hole and cooperates with the first drainage port.

6. The wafer electroplating fixture according to claim 2, wherein A third sinking platform is provided on the wafer storage table, and the third sinking platform is higher than the second sinking platform. The third sinking platform is used for placing the second wafer.

7. The wafer electroplating fixture according to claim 6, wherein A second adsorption table is provided on the third sinking platform, and a second adsorption groove is provided on the second adsorption table. The second adsorption groove is used to adsorb and fix the second wafer.

8. The wafer electroplating fixture according to claim 6, wherein, A second drainage port is opened on the third sinking platform, and the second drainage port is used to communicate with external electroplating solution.

9. The wafer electroplating fixture according to claim 1, wherein, The wafer storage table is press-fitted and fixed with the cover plate.

10. The wafer electroplating fixture according to claim 9, wherein, The cover plate is sleeved on the wafer storage table to realize the clamping connection between the cover plate and the wafer storage table.

11. The wafer electroplating fixture according to claim 10, wherein, The cover plate includes a first annular inner surface, and the wafer storage table includes a first annular outer surface. The first annular inner surface is sleeved on the first annular outer surface, and the first annular inner surface and the first annular outer surface are mutually abutted.

12. The wafer electroplating fixture according to claim 9, wherein, A clamping groove is provided on the cover plate, and a convex block matched with the clamping groove is provided on the wafer storage table. The clamping groove is clamped with the convex block.

13. The wafer electroplating fixture according to claim 1, wherein, It further includes a base. The wafer storage table is provided on the base, and a liquid medicine tank is provided on the base. The liquid medicine tank is communicated with the wafer storage table.

14. The wafer electroplating fixture according to claim 13, wherein, A lead groove is provided on the base. One end of the lead groove is communicated with the liquid medicine tank, and the other end is communicated with the wafer storage table.

15. The wafer electroplating fixture according to claim 14, wherein, The side wall of the lead groove protrudes on the base, and the cover plate is clamped with the side wall of the lead groove.

16. The wafer electroplating fixture according to any one of claims 1 to 15, characterized in that, The cover plate is made of a transparent material.

17. A wafer electroplating device, characterized in that, It includes an electroplating machine platform and the wafer electroplating fixture according to any one of claims 1 to 16, and the wafer storage table is arranged on the electroplating machine platform.

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