Plating device and plating method for plating semiconductor wafer

Abstract

A plating device comprises a workpiece holder, a plating tank and a clamping ring. The plating tank is located under the workpiece holder. The clamping ring is connected to the workpiece holder. The clamping ring comprises a channel connecting the inner surface of the clamping ring with the outer surface of the clamping ring.

Description

Technical Field

[0001] The present invention relates to a plating device and a plating method. More specifically, the present invention relates to a plating device having a channel in a clamping ring and a plating method using the plating device. Background Art

[0002] In the production of advanced semiconductor integrated circuits (ICs), electroplated copper is currently used because copper has lower resistivity and higher current carrying capacity. However, the copper electroplating process may produce defective conductive features. For example, nanobubbles trapped in the electroplated copper layer will limit the quality of the conductive features and thus reduce the production yield of IC products. Therefore, one of the ongoing efforts to improve the electrical performance of IC devices is to form defect-free conductive features. Summary of the invention

[0003] A plating device comprises a workpiece holder, a plating tank and a clamping ring. The plating tank is located under the workpiece holder. The clamping ring is connected to the workpiece holder. The clamping ring comprises a channel connecting the inner surface of the clamping ring with the outer surface of the clamping ring.

[0004] A coating device for coating semiconductor wafers comprises a wafer holder, a coating tank and a clamping ring. The coating tank is located below the wafer holder. The clamping ring is connected to the wafer holder. The clamping ring comprises a body, a protrusion connected to the body, and a vent. The protrusion covers a portion of the bottom surface of the semiconductor wafer and has an inclined inner surface. The vent is located below the bottom surface of the semiconductor wafer. The vent has an inlet and an outlet, and the inlet is closer to the semiconductor wafer than the outlet.

[0005] A plating method includes at least the following steps: placing a semiconductor workpiece on a workpiece holder. Fixing the semiconductor workpiece to the workpiece holder by a clamping ring. The clamping ring is connected to the workpiece holder. The clamping ring includes a channel connecting the inner surface of the clamping ring with the outer surface of the clamping ring. Tilt the semiconductor workpiece to a first angle. Immerse the semiconductor workpiece in a plating solution in a plating tank and tilt the semiconductor workpiece to a second angle. Plate the semiconductor workpiece. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The various aspects of the present disclosure will be best understood by reading the following detailed description in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the size of various features may be arbitrarily increased or reduced for clarity of discussion.

[0007] Figures 1A to 1D are schematic cross-sectional views of various stages in forming conductive features of a semiconductor structure according to some embodiments of the present disclosure.

[0008] Figure 2 is a schematic cross-sectional view of a plating apparatus according to some embodiments of the present disclosure.

[0009] Figure 3 is a flow chart of a plating process for a semiconductor workpiece according to some embodiments of the present disclosure.

[0010] Figure 4A yes Figure 2 Schematic bottom view of the semiconductor workpiece and the clamping ring.

[0011] Figure 4B yes Figure 2 Schematic cross-sectional view of a workpiece holder, a semiconductor workpiece and a clamping ring in FIG.

[0012] Figure 4C yes Figure 2 A partial side view of the clamping ring in FIG.

[0013] Figure 5A is a schematic cross-sectional view of a workpiece holder, a semiconductor workpiece, and a clamping ring according to some alternative embodiments of the present disclosure.

[0014] Figure 5B is a partial side view of a clamping ring according to some alternative embodiments of the present disclosure.

[0015] Figure 6 is a schematic bottom view of a semiconductor workpiece and a clamping ring according to some alternative embodiments of the present disclosure.

[0016] Figure 7 is a schematic bottom view of a semiconductor workpiece and a clamping ring according to some alternative embodiments of the present disclosure.

[0017] Figure 8 is a schematic bottom view of a semiconductor workpiece and a clamping ring according to some alternative embodiments of the present disclosure.

[0018] Fig. 9A is a schematic bottom view of a semiconductor workpiece and a clamping ring according to some alternative embodiments of the present disclosure.

[0019] Fig. 9B is a partial perspective view of a semiconductor workpiece and a clamping ring according to some alternative embodiments of the present disclosure.

[0020] Fig. 9C is a partial side view of a clamping ring according to some alternative embodiments of the present disclosure.

[0021] Fig.10is a schematic bottom view of a semiconductor workpiece and a clamping ring according to some alternative embodiments of the present disclosure.

[0022] Fig.11 is a schematic bottom view of a semiconductor workpiece and a clamping ring according to some alternative embodiments of the present disclosure.

[0023] Fig.12 is a schematic bottom view of a semiconductor workpiece and a clamping ring according to some alternative embodiments of the present disclosure.

[0024] Fig.13A is a schematic bottom view of a semiconductor workpiece and a clamping ring according to some alternative embodiments of the present disclosure.

[0025] Fig. 13B is a partial side view of a clamping ring according to some alternative embodiments of the present disclosure.

[0026] Description of Figure Numbers

[0027] 10: Semiconductor structure

[0028] 11: Basal layer

[0029] 11a, 12a: Main surface

[0030] 12: Conductive characteristics

[0031] 20: Pre-wetting process

[0032] 30: Plating process

[0033] 40: Plating equipment

[0034] 121: Seed material layer

[0035] 122: Conductive material layer

[0036] 410: Tilt mechanism

[0037] 420: Connectors

[0038] 430: Rotating mechanism

[0039] 440: Workpiece holder

[0040] 450, 450a, 450b, 450c, 450d, 450e, 450f, 450g, 450h, 450i: Clamping ring

[0041] 452: Ontology Department

[0042] 454: Protrusion

[0043] 454a: Highlight pattern

[0044] 456, 458: Channel

[0045] 460: Plating tank

[0046] BS 452 ,BS W : Bottom surface

[0047] d: distance

[0048] IL: Entrance

[0049] IS, IS1, IS2: Inner surface

[0050] LS 440 LS W : Side surface

[0051] OL: Export

[0052] OP: Opening

[0053] OS, OS1, OS2: Outer surface

[0054] PS: Plating solution

[0055] R1, R2: diameter

[0056] S1, S2, S3, S4, S5, S6, S7, S8, S9: Steps

[0057] TS 454 : Top surface

[0058] W: Semiconductor workpiece

[0059] w1, w2, w3: width DETAILED DESCRIPTION

[0060] The following disclosure provides many different embodiments or examples for implementing the different features of the provided subject matter. Specific examples of components and arrangements are set forth below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first feature on or on a second feature may include an embodiment in which the first feature and the second feature are formed to be in direct contact, and may also include an embodiment in which an additional feature may be formed between the first feature and the second feature so that the first feature and the second feature may not be in direct contact. In addition, the present disclosure may reuse reference numerals and / or letters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself represent the relationship between the various embodiments and / or configurations discussed.

[0061] Furthermore, for ease of description, spatially relative terms such as "beneath," "below," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or feature to another (other) element or feature as shown in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0062] Figures 1A to 1D is a schematic cross-sectional view of various stages of forming a conductive feature 12 on a semiconductor structure 10 according to some embodiments of the present disclosure. Figure 1A , the base layer 11 of the semiconductor structure 10 is provided with an opening OP. In addition, a seed material layer 121 is formed on the base layer 11 in a conformal manner. In some embodiments, the base layer 11 is a semiconductor wafer (e.g., a silicon wafer) or a part of a semiconductor wafer. For example, the base layer 11 includes a semiconductor substrate that may be doped or undoped, such as a bulk semiconductor. In this case, the conductive features 12 ( Figure 1D ) can be used as a through substrate via (TSV) in the semiconductor structure 10. However, the present disclosure is not limited thereto. In some alternative embodiments, the base layer 11 is a dielectric layer formed on a semiconductor substrate. In this case, the conductive feature 12 ( Figure 1D ) may be formed as part of an interconnect circuit system in semiconductor structure 10.

[0063] In some embodiments, the opening OP is formed by an acceptable removal technique (eg, photolithography and etching, drilling, and / or the like). The depth of the opening OP may be in the range of about 1 μm to about 100 μm. Figure 1A The opening OP is shown as not penetrating the base layer 11, but the present disclosure is not limited thereto. In some alternative embodiments, the opening OP may penetrate the base layer 11 to expose the components located under the base layer 11. It should be noted that Figure 1A The cross-sectional shape of the opening OP in FIG. 1 is only an example, and a dual damascene opening including a via hole connected to the trench may be formed in the base layer 11 according to some alternative embodiments.

[0064] In some embodiments, the material of the seed material layer 121 includes Cu, Ni, Co, Ru, a combination thereof, and the like. For example, the seed material layer 121 may include a conductive material (e.g., Cu) that is the same as the conductive material used in the subsequent plating process. In some embodiments, the opening OP is first lined with a barrier liner (not shown), and then the seed material layer 121 is deposited on the barrier liner. The barrier liner may bond the conductive material to the base layer 11 (e.g., a dielectric layer) or may prevent the conductive material from interacting with the base layer 11 (e.g., a silicon substrate). In some embodiments, the material of the barrier liner includes Ta, TaN, Ti, TiN, or a combination thereof.

[0065] refer to Figure 1B , a pre-wetting process 20 is performed on the semiconductor structure 10. For example, the seed material layer 121 is treated with the pre-wetting process 20 to improve the wetting ability. The wettability of the seed material layer 121 may be critical to the subsequent plating process. If the seed material layer 121 cannot be wetted by the plating liquid, it is impossible to deposit the plating material on that area of ​​the seed material layer 121, and defects may be formed. The pre-wetting process 20 may involve using a liquid to wet the semiconductor structure 10.

[0066] refer to Figure 1C , a conductive material layer 122 is formed on the seed material layer 121 through a plating process 30. The conductive material layer 122 may be a metal material including a metal or a metal alloy (e.g., copper, silver, gold, tungsten, cobalt, aluminum, or an alloy thereof). In some embodiments, the plating process 30 includes electrochemical plating (ECP) and the like. For example, after the pre-wetting process 20, ECP is performed to fill the opening OP with the conductive material layer 122. In some cases, undesirable bubbles may be generated during the plating process 30. These bubbles may be located in the opening OP to cause blocking points and inhibit the conductive material layer 122 from being formed on these blocking points. A plating device 40 ( Figure 2 ) and the plating process 30 ( Figure 3 ).

[0067] refer to Figure 1D, removing excess material formed on the main surface 11a of the base layer 11 by the conductive material layer 122 and the seed material layer 121 to form a semiconductor structure 10 having a conductive feature 12 embedded in the base layer 11. For example, the remaining seed material layer 121 and the remaining conductive material layer 122 are collectively referred to as conductive features 12. In some embodiments, planarization (e.g., chemical mechanical polishing, etching, grinding, combinations thereof, etc.) is performed to remove the excess material. In some embodiments, after planarization, the surface of the conductive material layer 122 and the surface of the seed material layer 121 form the main surface 12a of the conductive feature 12. Figure 1D As shown in FIG. 1 , the main surface 12a of the conductive feature 12 is substantially at the same level as the main surface 11a of the base layer 11. In some embodiments, the barrier liner formed between the base layer 11 and the seed material layer 121 is also removed by planarization.

[0068] Figure 2 is a schematic cross-sectional view of a plating device 40 according to some embodiments of the present disclosure. Figure 2 , the plating device 40 includes a tilting mechanism 410, a connector 420, a rotating mechanism 430, a workpiece holder 440, a clamping ring 450, and a plating tank 460. In some embodiments, the tilting mechanism 410 includes a robot arm, a gear, a controller, or a combination thereof. In some embodiments, the tilting mechanism 410 is configured to tilt the semiconductor workpiece W during the plating process 30. In some embodiments, the rotating mechanism 430 includes a motor, a shaft, a controller, or a combination thereof. In some embodiments, the rotating mechanism 430 is configured to rotate or turn the semiconductor workpiece W during the plating process 30.

[0069] like Figure 2 As shown in FIG. 4 , the connecting member 420 physically connects the tilting mechanism 410 and the rotating mechanism 430. That is, the tilting mechanism 410 is connected to the rotating mechanism 430 through the connecting member 420. The connecting member 420 may be any connecting mechanism capable of physically connecting the tilting mechanism 410 and the rotating mechanism 430. For example, the connecting member 420 may be a metal block, a plastic block, etc. capable of lifting the rotating mechanism 430, the workpiece holder 440, and the clamping ring 450.

[0070] In some embodiments, the workpiece holder 440 is connected to the rotating mechanism 430 and the clamping ring 450 is connected to the workpiece holder 440. For example, the rotating mechanism 430 can drive the workpiece holder 440 to move together with the clamping ring 450. In some embodiments, the clamping ring 450 is engaged to the workpiece holder 440. For example, the clamping ring 450 can be removed from the workpiece holder 440. In some embodiments, the workpiece holder 440 includes a metal block or the like that can provide support for the clamping ring 450 and the semiconductor workpiece W during the plating process 30. In some embodiments, the clamping ring 450 is made of an inert material. For example, the clamping ring 450 is made of ceramic, polypropylene (PP), polyvinyl chloride (PVC), polyvinylidene difluoride (PVDF), fiber reinforced plastic, stainless steel, polytetrafluoroethene (PTFE), etc. The detailed configuration of the clamping ring 450 will be described below.

[0071] The plating tank 460 is located below the workpiece holder 440 and the clamping ring 450. In some embodiments, the plating tank 460 is filled with a plating solution PS. In some embodiments, the plating solution PS is referred to as an electrolyte. Figure 2 As shown in FIG. 4 , the semiconductor workpiece W is fixed to the workpiece holder 440 by a clamping ring 450. In some embodiments, the semiconductor workpiece W is Figure 1B The semiconductor structure 10 in the semiconductor structure 10. That is, the semiconductor workpiece W can be a semiconductor wafer. Therefore, in some embodiments, the workpiece holder 440 is referred to as a wafer holder. In some embodiments, the semiconductor workpiece W is placed face down. That is, the surface of the semiconductor workpiece W to be plated faces the plating tank 460 and the plating solution PS. For example, Figure 2 As shown in FIG. 4 , the seed material layer 121 faces the plating tank 460 and the plating solution PS. Figure 2 and Figure 3 A plating process 30 is described.

[0072] Figure 3 is a flow chart of a plating process 30 of a semiconductor workpiece W according to some embodiments of the present disclosure. Figure 2 and Figure 3 In step S1, a semiconductor workpiece W is placed on a workpiece holder 440 of a plating device 40. Thereafter, in step S2, the semiconductor workpiece W is fixed to the workpiece holder 440 by a clamping ring 450. In some embodiments, a portion of the clamping ring 450 is pressed against a portion of the semiconductor workpiece W so that the semiconductor workpiece W is firmly fixed to the workpiece holder 440.

[0073] In step S3, the semiconductor workpiece W is tilted to a first angle. In some embodiments, the tilting of the semiconductor workpiece W can be achieved by the tilting mechanism 410. For example, since the clamping ring 450, the workpiece holder 440, the rotating mechanism 430 and the connecting member 420 are connected to the tilting mechanism 410, the tilting mechanism 410 can drive the clamping ring 450, the workpiece holder 440, the rotating mechanism 430 and the connecting member 420 to tilt to the first angle, so that the semiconductor workpiece W clamped to the workpiece holder 440 can be tilted to the first angle. In some embodiments, the first angle is about 3° relative to the liquid surface of the plating solution PS. In some embodiments, after the semiconductor workpiece W is tilted, the rotating mechanism 430 is used to rotate / rotate the semiconductor workpiece W. In some embodiments, the rotation rate of the semiconductor workpiece W in step S3 is in the range of about 10 rpm (revolutions per minute) to about 120 rpm.

[0074] Subsequently, in step S4, the semiconductor workpiece W is immersed in the plating solution PS in the plating tank 460. For example, the tilting mechanism 410 lowers the connector 420, the rotating mechanism 430, the workpiece holder 440, the clamping ring 450 and the semiconductor workpiece W so that the semiconductor workpiece W, the workpiece holder 440 and the clamping ring 450 are immersed in the plating solution PS. In some embodiments, the semiconductor workpiece W enters the plating solution PS in an inclined manner. That is, the semiconductor workpiece W remains inclined at a first angle when entering the plating solution PS. In some embodiments, when the semiconductor workpiece W is clamped to the workpiece holder 440 in step S2, bubbles may be generated on the surface of the semiconductor workpiece W due to the clamping pressure. However, by using an angled immersion in step S4, the bubbles on the surface of the semiconductor workpiece W are pushed by the ripples that advance from the leading immersion edge toward the trailing immersion edge. In this way, tilting the semiconductor workpiece W enables some bubbles to be released to the atmosphere. After the semiconductor workpiece W is immersed in the plating solution PS, the semiconductor workpiece W is tilted to a second angle. In some embodiments, the second angle is about 0° relative to the liquid surface of the plating solution PS. For example, after the semiconductor workpiece W is immersed in the plating solution PS, the semiconductor workpiece W is tilted back to extend horizontally.

[0075] In step S5, the semiconductor workpiece W is plated. In some embodiments, the semiconductor workpiece W is plated by electrodepositing a conductive material onto the semiconductor workpiece W. Electrodeposition is performed by placing an anode and the semiconductor workpiece W (cathode) in a plating solution PS and applying a current so that metal ions in the plating solution PS are plated onto the semiconductor workpiece W. In step S5, the semiconductor workpiece W is rotated / rotated using a rotating mechanism 430. In some embodiments, the rotation rate of the semiconductor workpiece W in step S5 is in a range of about 30 rpm to about 200 rpm.

[0076] After the completion of the electrodeposition of the conductive material onto the semiconductor workpiece W, the plated semiconductor workpiece W is taken out of the plating tank 460 in step S6. For example, the tilting mechanism 410 pulls the semiconductor workpiece W out of the plating solution PS. Thereafter, the rotating mechanism 430 rotates the semiconductor workpiece W to spin dry the semiconductor workpiece W. That is, the plating solution PS remaining on the semiconductor workpiece W is removed from the semiconductor workpiece W by rotating the semiconductor workpiece W. In some embodiments, the rotation rate of the semiconductor workpiece W in step S6 is in the range of about 250 rpm to about 350 rpm. In some embodiments, the process in step S6 is called a reclaim spin.

[0077] In step S7, the plated semiconductor workpiece W is rinsed. In some embodiments, the plated semiconductor workpiece W is rinsed by spraying the plated surface of the semiconductor workpiece W with distilled water to remove the plating solution PS remaining on the plated surface of the semiconductor workpiece W. In some embodiments, during step S7, the rotating mechanism 430 also rotates the semiconductor workpiece W. In some embodiments, the rotation rate of the semiconductor workpiece W in step S7 is in the range of about 450 rpm to about 550 rpm. Thereafter, in step S8, the plated semiconductor workpiece W is dried. In some embodiments, the plated semiconductor workpiece W is dried by rotary drying. In some embodiments, the rotation rate of the semiconductor workpiece W in step S8 is in the range of about 700 rpm to about 800 rpm. In step S9, after drying the plated semiconductor workpiece W, the plated semiconductor workpiece W is removed from the plating device 40 to complete the plating process 30.

[0078] As described above, by obliquely immersing the semiconductor workpiece W into the plating solution PS, some of the bubbles generated can be released. However, depending on the number of bubbles generated, the angled immersion in step S4 may not be sufficient to remove all bubbles. In addition, during the immersion of the semiconductor workpiece W into the plating solution PS, additional bubbles may be generated on the surface of the semiconductor workpiece W. The bubbles on the surface of the semiconductor workpiece W will cause blocking points and inhibit the formation of conductive materials on these blocking points. Therefore, it is crucial to remove the bubbles on the surface of the semiconductor workpiece W before the conductive material is plated onto the semiconductor workpiece W. In some embodiments, by forming channels in the clamping ring 450, the bubbles can be fully removed through these channels by rotating the semiconductor workpiece W before plating the semiconductor workpiece W. Various configurations of the clamping ring 450 with channels will be described below.

[0079] Figure 4A yes Figure 2 Schematic bottom view of the semiconductor workpiece W and the clamping ring 450. Figure 4B yes Figure 2 FIG. 4 is a schematic cross-sectional view of a workpiece holder 440, a semiconductor workpiece W and a clamping ring 450 in FIG. Figure 4C yes Figure 2 A partial side view of the clamping ring 450 in FIG. FIG. 4A to FIG. 4C , the clamping ring 450 is connected to the workpiece holder 440. On the other hand, the semiconductor workpiece W is placed on the workpiece holder 440 and clamped to the workpiece holder 440 by the clamping ring 450. In some embodiments, the clamping ring 450 is engaged to the workpiece holder 440 and can be removed from the workpiece holder 440.

[0080] like Figure 4A and Figure 4B As shown in , the clamping ring 450 includes a body portion 452, a protrusion 454, and a channel 456. In some embodiments, the body portion 452 is engaged / connected with the workpiece holder 440. In some embodiments, the body portion 452 has an inner surface IS1 and an outer surface OS1 opposite to the inner surface IS1. In some embodiments, the inner surface IS1 of the body portion 452 is parallel to the outer surface OS1 of the body portion 452. Figure 4B As shown in FIG. 4 , the outer surface OS1 of the body portion 452 and the side surface LS of the workpiece holder 440 are 440 On the other hand, the inner surface IS1 of the main body 452 is aligned with the side surface LS of the semiconductor workpiece W. W That is, the main body portion 452 covers the side surface LS of the semiconductor workpiece W. W In some embodiments, the bottom surface BS of the body portion 452 452 The bottom surface BS of the semiconductor workpiece W WIn some embodiments, the body portion 452 has a rectangular cross-sectional view, such as Figure 4B as shown in .

[0081] In some embodiments, the protrusion 454 of the clamping ring 450 is connected to the body portion 452 of the clamping ring 450. For example, the protrusion 454 extends from the bottom surface BS of the body portion 452. 452 Protrusion. In some embodiments, the protrusion 454 of the clamping ring 450 is integrally formed with the main body 452. For example, the protrusion 454 and the main body 452 are made of the same material. In some embodiments, the protrusion 454 has an inner surface IS2 and an outer surface OS2. In some embodiments, the inner surface IS2 of the protrusion 454 is not parallel to the outer surface OS2 of the protrusion 454. In some embodiments, the inner surface IS2 of the protrusion 454 is an inclined surface. That is, the protrusion 454 has an inclined inner surface IS2. In some embodiments, the inclined inner surface IS2 of the protrusion 454 is connected to the outer surface OS2 of the protrusion 454. In some embodiments, the protrusion 454 also has a top surface TS connecting the outer surface OS2 and the inclined inner surface IS2. 454 In some embodiments, the protrusion 454 has a triangular cross-sectional view, such as Figure 4B In some embodiments, the top surface TS of the protrusion 454 454 The bottom surface BS of the body portion 452 452 and the bottom surface BS of the semiconductor workpiece W W That is, a portion of the protrusion 454 extends horizontally to cover the bottom surface BS of the semiconductor workpiece W. W In some embodiments, the outer surface OS2 of the protrusion 454 is aligned with the outer surface OS1 of the main body 452. In some embodiments, the protrusion 454 is a continuous pattern. For example, Figure 4A As shown in the bottom view of , the protrusion 454 is a continuous ring.

[0082] In some embodiments, the inner surface IS1 of the body 452 and the inner surface IS2 of the protrusion 454 are collectively referred to as the inner surface IS of the clamping ring 450. Similarly, the outer surface OS1 of the body 452 and the outer surface OS2 of the protrusion 454 are collectively referred to as the outer surface OS of the clamping ring 450. Figure 4A and Figure 4B As shown in FIG. 4 , the channel 456 penetrates through the clamping ring 450 to connect the inner surface IS of the clamping ring 450 with the outer surface OS. Since the channel 456 connects the inner surface IS of the clamping ring 450 with the outer surface OS, the channel 456 can be used as a bottom surface BS of the semiconductor workpiece W trapped during the plating process 30. W For example, before plating the semiconductor workpiece W (i.e., before Figure 3 The semiconductor workpiece W is rotated to remove bubbles through the channel 456 of the clamping ring 450. In some embodiments, the bottom surface BS of the semiconductor workpiece W can be driven out through the channel 456 of the clamping ring 450 by forced centrifugal direction flow. W The centrifugal flow is generated by the pressure difference between the inner surface IS and the outer surface OS of the clamping ring 450 according to Bernoulli's principle when the semiconductor workpiece W is rotated in the plating tank 460. For example, since the speed at the inner surface IS is less than the speed at the outer surface OS, the pressure at the inner surface IS is greater than the pressure at the outer surface OS. The greater pressure at the inner surface IS will push the bubbles to the outer surface OS with a lower pressure, and the channel 456 provides a path for the bubbles to travel from the inner surface IS of the clamping ring 450 to the outer surface OS of the clamping ring 450. In this way, the undesirable bubbles can be driven out from the semiconductor workpiece W, and the plating quality can be substantially improved. In some embodiments, since the channel 456 provides a path for air to travel, the channel 456 can be referred to as a vent.

[0083] In some embodiments, the channel 456 penetrates through the protrusion 454 of the clamping ring 450 to connect the inner surface IS2 of the protrusion 454 with the outer surface OS2. Figure 4B As shown in FIG. 4 , since the channel 456 is located in the protrusion 454 of the clamping ring 450 , the channel 456 (ie, the vent) is also located on the bottom surface BS of the semiconductor workpiece W. W Below. Figure 4A and Figure 4B As shown in , each channel 456 has a first end located at the inner surface IS of the clamping ring 450 and a second end located at the outer surface OS of the clamping ring 450. In some embodiments, the first end is referred to as an inlet IL, and the second end is referred to as an outlet OL. For example, each vent has an inlet IL and an outlet OL. In some embodiments, the inlet IL of the channel 456 (i.e., the vent) is located on the inclined inner surface IS2 of the protrusion 454, and the outlet OL of the channel 456 (i.e., the vent) is located on the outer surface OS2 of the protrusion 454. In addition, the inlet IL is closer to the semiconductor workpiece W than the outlet OL.

[0084] like FIG. 4A to FIG. 4CAs shown in , channel 456 is a circular channel. That is, the inlet IL and the outlet OL of channel 456 are circular openings. However, the present disclosure is not limited to this. In some alternative embodiments, channel 456 may be a rectangular channel, a triangular channel, or may have other geometric shapes. In some embodiments, the size of the first end of channel 456 (i.e., the inlet IL) is substantially equal to the size of the second end of channel 456 (i.e., the outlet OL). For example, the diameter R1 of the inlet IL of channel 456 is substantially equal to the diameter R2 of the outlet OL of channel 456. In some embodiments, diameter R1 and diameter R2 are in the range of about 3 μm to about 10 μm. In some embodiments, the distance d between two adjacent channels 456 is in the range of about 5 μm to about 10 μm. As Figure 4A As shown in FIG. 4 , each channel 456 is curved in a counterclockwise direction in a bottom view. In some embodiments, when the semiconductor workpiece W rotates in a counterclockwise direction, the arrangement of the channels 456 can further help bubbles to quickly travel from the inner surface IS to the outer surface OS of the clamping ring 450 .

[0085] Figure 5A 4 is a schematic cross-sectional view of a workpiece holder 440, a semiconductor workpiece W, and a clamping ring 450a according to some alternative embodiments of the present disclosure. Figure 5B is a partial side view of a clamping ring 450a according to some alternative embodiments of the present disclosure. Figure 5A and Figure 5B , Figure 5A and Figure 5B The workpiece holder 440, the semiconductor workpiece W and the clamping ring 450a are similar to FIG. 4A to FIG. 4C The workpiece holder 440, the semiconductor workpiece W and the clamping ring 450 in FIG. 4 are similar to each other, so similar elements are marked with the same reference numerals and will not be described in detail herein. Figure 5A and Figure 5B In the clamping ring 450a, a plurality of rows of channels 456 are provided in the protrusion 454. For example, Figure 5B As shown in , the plurality of channels 456 are aligned along the vertical (i.e., z-axis) direction. That is, each channel 456 is aligned with a corresponding channel 456 in an adjacent row. In some embodiments, each channel 456 is parallel to another channel 456 directly above or directly below the each channel 456.

[0086] Figure 6 4 is a schematic bottom view of a semiconductor workpiece W and a clamping ring 450b according to some alternative embodiments of the present disclosure. Figure 6 , Figure 6 The semiconductor workpiece W and the clamping ring 450b are similar to FIG. 4A to FIG. 4CThe semiconductor workpiece W and the clamping ring 450 in FIG. 4 are shown in FIG. 4 , and thus similar elements are denoted by the same reference numerals and will not be described in detail herein. Figure 6 In the clamping ring 450b of the embodiment of the present invention, the size of the first end (i.e., the inlet IL) of the channel 456 is different from the size of the second end (i.e., the outlet OL) of the channel 456. In some embodiments, the diameter R1 of the inlet IL of the channel 456 is smaller than the diameter R2 of the outlet OL of the channel 456. For example, the size of each channel 456 gradually increases from the inner surface IS of the clamping ring 450b toward the outer surface OS of the clamping ring 450b. In some embodiments, each channel 456 is a horn shape. In some embodiments, the diameter R1 is in the range of about 3 μm to about 7 μm, and the diameter R2 is in the range of about 8 μm to about 15 μm.

[0087] Figure 7 is a schematic bottom view of a semiconductor workpiece W and a clamping ring 750c according to some alternative embodiments of the present disclosure. Figure 7 , Figure 7 The semiconductor workpiece W and the clamping ring 450c are similar to FIG. 4A to FIG. 4C The semiconductor workpiece W and the clamping ring 450 in FIG. 4 are shown in FIG. 4 , and thus similar elements are denoted by the same reference numerals and will not be described in detail herein. Figure 7 In the clamping ring 450c of the embodiment of the present invention, the size of the first end (i.e., the inlet IL) of the channel 456 is different from the size of the second end (i.e., the outlet OL) of the channel 456. In some embodiments, the diameter R1 of the inlet IL of the channel 456 is greater than the diameter R2 of the outlet OL of the channel 456. For example, the size of each channel 456 gradually decreases from the inner surface IS of the clamping ring 450c toward the outer surface OS of the clamping ring 450c. In some embodiments, each channel 456 is horn-shaped. In some embodiments, the diameter R1 is in the range of about 8 μm to about 15 μm, and the diameter R2 is in the range of about 3 μm to about 7 μm.

[0088] Figure 8 4 is a schematic bottom view of a semiconductor workpiece W and a clamping ring 450d according to some alternative embodiments of the present disclosure. Figure 8 , Figure 8 The semiconductor workpiece W and the clamping ring 450d are similar to FIG. 4A to FIG. 4C The semiconductor workpiece W and the clamping ring 450 in FIG. 4 are shown in FIG. 4 , and thus similar elements are denoted by the same reference numerals and will not be described in detail herein. Figure 8In the clamping ring 450d, each channel 456 is curved in the clockwise direction in the bottom view. In some embodiments, when the semiconductor workpiece W rotates in the clockwise direction, the arrangement of the channels 456 can further help the bubbles to quickly travel from the inner surface IS of the clamping ring 450d to the outer surface OS of the clamping ring 450d.

[0089] Fig. 9A 450e is a schematic bottom view of a semiconductor workpiece W and a clamping ring 450e according to some alternative embodiments of the present disclosure. Fig. 9B 4 is a partial perspective view of a semiconductor workpiece W and a clamping ring 450e according to some alternative embodiments of the present disclosure. Fig. 9C is a partial side view of a clamping ring 450e according to some alternative embodiments of the present disclosure. Fig. 9A and Fig. 9C compared to, Fig. 9B The semiconductor workpiece W and the clamping ring 450e are turned over. FIG. 9A to FIG. 9C , FIG. 9A to FIG. 9C The semiconductor workpiece W and the clamping ring 450e are similar to FIG. 4A to FIG. 4C The semiconductor workpiece W and the clamping ring 450 in the embodiment of the present invention are shown in FIG. 4 , and thus similar elements are denoted by the same reference numerals and will not be described in detail herein. FIG. 9A to FIG. 9C The clamping ring 450e is omitted FIG. 4A to FIG. 4C The channel 456 in the clamping ring 450. In some embodiments, the clamping ring 450e includes a body portion 452, a protrusion 454 and a channel 458. FIG. 9A to FIG. 9C The main body 452 of the clamping ring 450e is similar to FIG. 4A to FIG. 4C The main body portion 452 is not described in detail herein.

[0090] In some embodiments, FIG. 9A to FIG. 9C The protrusion 454 of the clamping ring 450e is similar to FIG. 4A to FIG. 4C The protrusion 454 of the clamping ring 450e is not a continuous pattern. For example, the protrusion 454 of the clamping ring 450e includes a plurality of protrusion patterns 454a that are not connected to each other. That is, the protrusion patterns 454a are spaced apart from each other. In some embodiments, the protrusion 454 of the clamping ring 450e is connected to the body portion 452 of the clamping ring 450e. For example, the protrusion pattern 454a of the protrusion 454 extends from the bottom surface BS of the body portion 452. 452Protrusion. In some embodiments, the protrusion pattern 454a of the clamping ring 450e is integrally formed with the main body 452. However, the present disclosure is not limited to this. In some alternative embodiments, the protrusion pattern 454a can be installed on the main body 452 and can be removed from the main body 452. The material of the protrusion pattern 454a can be the same as or different from the material of the main body 452. In some embodiments, each protrusion pattern 454a has an inner surface IS2 and an outer surface OS2. In some embodiments, the inner surface IS2 of the protrusion pattern 454a is not parallel to the outer surface OS2 of the protrusion pattern 454a. In some embodiments, the inner surface IS2 of the protrusion pattern 454a is an inclined surface. That is, the protrusion pattern 454a has an inclined inner surface IS2. In some embodiments, the inclined inner surface IS2 of the protrusion pattern 454a is connected to the outer surface OS2 of the protrusion pattern 454a. In some embodiments, each protrusion pattern 454a is a triangular prism, such as Fig. 9B In some embodiments, a portion of each protruding pattern 454a extends horizontally to cover the bottom surface BS of the semiconductor workpiece W. W In some embodiments, the outer surface OS2 of the protruding pattern 454 a is aligned with the outer surface OS1 of the body portion 452 .

[0091] In some embodiments, the inner surface IS1 of the body 452 and the inner surface IS2 of the protruding pattern 454a (i.e., the protruding portion 454) are collectively referred to as the inner surface IS of the clamping ring 450e. Similarly, the outer surface OS1 of the body 452 and the outer surface OS2 of the protruding pattern 454a (i.e., the protruding portion 454) are collectively referred to as the outer surface OS of the clamping ring 450e. Fig. 9A and Fig. 9B As shown in FIG. 3 , each channel 458 is located between two adjacent protrusion patterns 454a to connect the inner surface IS and the outer surface OS of the clamping ring 450e. For example, each channel 458 is defined by the space between the two adjacent protrusion patterns 454a. Since the channel 458 connects the inner surface IS and the outer surface OS of the clamping ring 450e, the channel 458 can be used as a bottom surface BS enclosed in the semiconductor workpiece W during the plating process 30. W For example, the semiconductor workpiece W is rotated before plating the semiconductor workpiece W to remove the bubbles through the channel 458 of the clamping ring 450e. In some embodiments, when the semiconductor workpiece W is rotated in the plating tank 460, the bottom surface BS of the semiconductor workpiece W can be driven out through the channel 458 of the clamping ring 450e by the forced centrifugal flow. W In this way, the plating quality can be substantially improved. In some embodiments, since the channel 458 provides a path for air to travel, the channel 458 can be referred to as a vent.

[0092] like Fig. 9B and Fig. 9C As shown in FIG. 4 , since the channel 458 is located between two adjacent protruding patterns 454 a of the clamping ring 450 e , the channel 458 (ie, the vent) is also located on the bottom surface BS of the semiconductor workpiece W. W Below. Fig. 9A As shown in , each channel 458 has a first end located at the same plane as the inner surface IS of the clamping ring 450e and a second end located at the same plane as the outer surface OS of the clamping ring 450e. In some embodiments, the first end is referred to as the inlet IL and the second end is referred to as the outlet OL. For example, each vent has an inlet IL and an outlet OL. In some embodiments, the inlet IL of the channel 458 (i.e., the vent) is located at the same plane as the oblique inner surface IS2 of the protruding pattern 454a, and the outlet OL of the channel 458 (i.e., the vent) is located at the same plane as the outer surface OS2 of the protruding pattern 454a. In addition, the inlet IL is closer to the semiconductor workpiece W than the outlet OL.

[0093] like FIG. 9A to FIG. 9C As shown in , the channel 458 is an open channel. In some embodiments, the size of each channel 458 is substantially equal to the distance between two adjacent protrusion patterns 454a. In some embodiments, the size of the first end (i.e., the inlet IL) of the channel 458 is substantially equal to the size of the second end (i.e., the outlet OL) of the channel 458. For example, the width w1 of the inlet IL of the channel 458 is substantially equal to the width w2 of the outlet OL of the channel 458. In some embodiments, the width w1 and the width w2 are in the range of about 5 μm to about 15 μm. In some embodiments, the width w3 of each protrusion pattern 454a is non-uniform. For example, the width w3 of the protrusion pattern 454a gradually increases or decreases from the inner surface IS2 of the protrusion pattern 454a toward the outer surface OS2 of the protrusion pattern 454a. However, the present disclosure is not limited to this. In some alternative embodiments, the width w3 of each protrusion pattern 454a is uniform. In some embodiments, the width w3 of each protrusion pattern 454a is in the range of about 5 μm to about 15 μm. As Fig. 9A As shown in FIG. 4 , each channel 458 is curved in a counterclockwise direction in a bottom view. In some embodiments, when the semiconductor workpiece W rotates in a counterclockwise direction, the arrangement of the channels 458 can further help bubbles to quickly travel from the inner surface IS of the clamping ring 450f to the outer surface OS of the clamping ring 450e.

[0094] Fig.10 4 is a schematic bottom view of a semiconductor workpiece W and a clamping ring 450f according to some alternative embodiments of the present disclosure. Fig.10 , Fig.10 The semiconductor workpiece W and the clamping ring 450f are similar to FIG. 9A to FIG. 9C The semiconductor workpiece W and the clamping ring 450e in FIG. 4 are shown in FIG. 4 , and thus similar elements are denoted by the same reference numerals and will not be described in detail herein. Fig.10 In the clamping ring 450f of the present invention, the size of the first end (i.e., the inlet IL) of the channel 458 is different from the size of the second end (i.e., the outlet OL) of the channel 458. In some embodiments, the width w1 of the inlet IL of the channel 458 is smaller than the width w2 of the outlet OL of the channel 458. For example, the size of each channel 458 gradually increases from the inner surface IS of the clamping ring 450f toward the outer surface OS of the clamping ring 450f. In some embodiments, each channel 458 is horn-shaped. In some embodiments, the width w1 is in the range of about 3 μm to about 7 μm, and the width w2 is in the range of about 8 μm to about 12 μm. In some embodiments, the width w3 of each protruding pattern 454a is non-uniform. For example, the width w3 of the protruding pattern 454a gradually decreases from the inner surface IS2 of the protruding pattern 454a toward the outer surface OS2 of the protruding pattern 454a. However, the present disclosure is not limited thereto. In some alternative embodiments, the width w3 of each protruding pattern 454a is uniform. In some embodiments, the width w3 of each protrusion pattern 454 a is in a range from about 5 μm to about 15 μm.

[0095] Fig.11 4 is a schematic bottom view of a semiconductor workpiece W and a clamping ring 450g according to some alternative embodiments of the present disclosure. Fig.11 , Fig.11 The semiconductor workpiece W and the clamping ring 450g are similar to FIG. 9A to FIG. 9C The semiconductor workpiece W and the clamping ring 450e in FIG. 4 are shown in FIG. 4 , and thus similar elements are denoted by the same reference numerals and will not be described in detail herein. Fig.11In the clamping ring 450g of the present invention, the size of the first end (i.e., the inlet IL) of the channel 458 is different from the size of the second end (i.e., the outlet OL) of the channel 458. In some embodiments, the width w1 of the inlet IL of the channel 458 is greater than the width w2 of the outlet OL of the channel 458. For example, the size of each channel 458 gradually decreases from the inner surface IS of the clamping ring 450g toward the outer surface OS of the clamping ring 450g. In some embodiments, each channel 458 is horn-shaped. In some embodiments, the width w1 is in the range of about 8 μm to about 12 μm, and the width w2 is in the range of about 3 μm to about 7 μm. In some embodiments, the width w3 of each protruding pattern 454a is non-uniform. For example, the width w3 of the protruding pattern 454a gradually increases from the inner surface IS2 of the protruding pattern 454a toward the outer surface OS2 of the protruding pattern 454a. However, the present disclosure is not limited thereto. In some alternative embodiments, the width w3 of each protruding pattern 454a is uniform. In some embodiments, the width w3 of each protrusion pattern 454 a is in a range from about 5 μm to about 15 μm.

[0096] Fig.12 4 is a schematic bottom view of a semiconductor workpiece W and a clamping ring 450h according to some alternative embodiments of the present disclosure. Fig.12 , Fig.12 The semiconductor workpiece W and the clamping ring 450h are similar to FIG. 9A to FIG. 9C The semiconductor workpiece W and the clamping ring 450e in FIG. 4 are shown in FIG. 4 , and thus similar elements are denoted by the same reference numerals and will not be described in detail herein. Fig.10 In the clamping ring 450h, each channel 458 is curved in the clockwise direction in the bottom view. In some embodiments, when the semiconductor workpiece W rotates in the clockwise direction, the arrangement of the channels 458 can further help the bubbles to quickly travel from the inner surface IS of the clamping ring 450h to the outer surface OS of the clamping ring 450h.

[0097] Fig.13A 450i is a schematic bottom view of a semiconductor workpiece W and a clamping ring 450i according to some alternative embodiments of the present disclosure. Fig. 13B is a partial side view of a clamping ring 450i according to some alternative embodiments of the present disclosure. Fig.13A and Fig. 13B , Fig.13A and Fig. 13B The semiconductor workpiece W and the clamping ring 450i are similar to FIG. 9A to FIG. 9C The semiconductor workpiece W and the clamping ring 450e in FIG. 4 are shown in FIG. 4 , and thus similar elements are denoted by the same reference numerals and will not be described in detail herein. Fig.13A and Fig. 13BThe clamping ring 450i in the embodiment further includes a plurality of channels 456. In some embodiments, Fig.13A and Fig. 13B The channel 456 of the clamping ring 450i is similar to FIG. 4A to FIG. 4C The groove 456 of the clamping ring 450 is not described in detail herein. Fig. 13B As shown in FIG. 3 , the channel 456 penetrates through the protrusion pattern 454a of the protrusion 454. In some embodiments, each protrusion pattern 454a corresponds to one channel 456. However, the present disclosure is not limited thereto. In some alternative embodiments, multiple channels 456 may penetrate through the same protrusion pattern 454a. Since the channels 456 and 458 connect the inner surface IS and the outer surface OS of the clamping ring 450i, the channels 456 and 458 may be used as a bottom surface BS of the semiconductor workpiece W trapped during the plating process 30. W In some embodiments, the bottom surface BS of the semiconductor workpiece W is W Undesirable bubbles on the surface can be driven out through the channels 456 and 458 of the clamping ring 450i. In this way, the plating quality can be substantially improved.

[0098] According to some embodiments of the present disclosure, a plating device includes a workpiece holder, a plating tank and a clamping ring. The plating tank is located below the workpiece holder. The clamping ring is connected to the workpiece holder. The clamping ring includes a channel that connects the inner surface of the clamping ring with the outer surface of the clamping ring.

[0099] According to some embodiments of the present disclosure, each of the channels has a first end located at the inner surface of the clamping ring and a second end located at the outer surface of the clamping ring, and a size of the first end is substantially equal to a size of the second end.

[0100] According to some embodiments of the present disclosure, each of the channels has a first end located at the inner surface of the clamping ring and a second end located at the outer surface of the clamping ring, and a size of the first end is different from a size of the second end.

[0101] According to some embodiments of the present disclosure, the clamping ring includes a body portion and a protrusion protruding from a bottom surface of the body portion, and the channel penetrates through the protrusion.

[0102] According to some embodiments of the present disclosure, the protrusions are a continuous pattern.

[0103] According to some embodiments of the present disclosure, the protrusion includes a plurality of protrusion patterns that are not connected to each other.

[0104] According to some embodiments of the present disclosure, each of the channels is located between two adjacent protruding patterns.

[0105] According to some embodiments of the present disclosure, the channel penetrates through the protrusion pattern.

[0106] According to some embodiments of the present disclosure, each of the channels is curved in a clockwise direction in a bottom view.

[0107] According to some embodiments of the present disclosure, each of the channels is curved in a counterclockwise direction in a bottom view.

[0108] According to some embodiments of the present disclosure, the plating device further comprises a rotating mechanism, a connecting member and a tilting mechanism. The rotating mechanism is connected to the workpiece holder. The connecting member is connected to the rotating mechanism. The tilting mechanism is connected to the rotating mechanism through the connecting member.

[0109] According to some alternative embodiments of the present disclosure, a coating device for coating semiconductor wafers includes a wafer holder, a coating tank and a clamping ring. The coating tank is located under the wafer holder. The clamping ring is connected to the wafer holder. The clamping ring includes a body, a protrusion connected to the body, and a vent. The protrusion covers a portion of the bottom surface of the semiconductor wafer and has an inclined inner surface. The vent is located below the bottom surface of the semiconductor wafer. The vent has an inlet and an outlet, and the inlet is closer to the semiconductor wafer than the outlet.

[0110] According to some alternative embodiments of the present disclosure, the inlet of the vent is located on the inclined inner surface of the protrusion.

[0111] According to some alternative embodiments of the present disclosure, a top surface of the protrusion is coplanar with the bottom surface of the semiconductor wafer.

[0112] According to some alternative embodiments of the present disclosure, an outer surface of the body portion is aligned with an outer surface of the protrusion, the inclined inner surface of the protrusion is connected to the outer surface of the protrusion, and the outlet of the vent is located on the outer surface of the protrusion.

[0113] According to some alternative embodiments of the present disclosure, the body portion covers a side surface of the semiconductor wafer.

[0114] According to some embodiments of the present disclosure, a plating method includes at least the following steps: placing a semiconductor workpiece on a workpiece holder. Fixing the semiconductor workpiece to the workpiece holder via a clamping ring. The clamping ring is connected to the workpiece holder. The clamping ring includes a channel connecting an inner surface of the clamping ring with an outer surface of the clamping ring. Tilt the semiconductor workpiece to a first angle. Immerse the semiconductor workpiece in a plating solution in a plating tank and tilt the semiconductor workpiece to a second angle. Plate the semiconductor workpiece.

[0115] According to some embodiments of the present disclosure, the first angle is about 3° relative to a liquid surface of the plating solution, and the second angle is about 0° relative to the liquid surface of the plating solution.

[0116] According to some embodiments of the present disclosure, the semiconductor workpiece is tilted to the second angle after being immersed in the plating solution.

[0117] According to some embodiments of the present disclosure, bubbles are generated during immersion of the semiconductor workpiece in the plating solution, and the bubbles are removed through the channel of the clamping ring by rotating the semiconductor workpiece before plating the semiconductor workpiece.

[0118] The features of several embodiments are summarized above so that those skilled in the art can better understand the various aspects of the present disclosure. Those skilled in the art should understand that they can easily use the present disclosure as a basis for designing or modifying other processes and structures to implement the same purposes and / or achieve the same advantages as the embodiments described herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions and modifications herein without departing from the spirit and scope of the present disclosure.

Claims

1. A plating device comprising: Workpiece holder; a plating tank located below the workpiece holder; as well as A clamping ring connected to the workpiece holder, wherein the clamping ring includes a main body and a protrusion protruding from the bottom surface of the main body, the protrusion includes a plurality of protrusion patterns that are not connected to each other, wherein the clamping ring includes a channel located between two adjacent protrusion patterns, and the channel located between two adjacent protrusion patterns connects the inner surface of the clamping ring with the outer surface of the clamping ring.

2. The plating device according to claim 1, wherein each of the channels located between two adjacent protruding patterns has a first end located at the inner surface of the clamping ring and a second end located at the outer surface of the clamping ring, and the size of the first end is equal to the size of the second end.

3. The plating device according to claim 1, wherein each of the channels located between two adjacent protruding patterns has a first end located at the inner surface of the clamping ring and a second end located at the outer surface of the clamping ring, and the size of the first end is different from the size of the second end. 4 . The plating apparatus according to claim 1 , wherein the clamping ring further comprises a channel penetrating through the protrusion pattern, the channel penetrating through the protrusion pattern connecting the inner surface of the clamping ring with the outer surface of the clamping ring. 5 . The plating device according to claim 1 , wherein each of the channels located between two adjacent protruding patterns is bent in a clockwise direction in a bottom view. 6 . The plating device according to claim 1 , wherein each of the channels located between two adjacent protruding patterns is bent in a counterclockwise direction in a bottom view.

7. The plating device according to claim 1 further comprising: a rotating mechanism connected to the workpiece holder; A connecting member connected to the rotating mechanism; as well as The tilting mechanism is connected to the rotating mechanism through the connecting piece.

8. A coating device for coating a semiconductor wafer, comprising: Wafer holder; a plating tank located below the wafer holder; as well as A clamping ring connected to the wafer holder, wherein the clamping ring includes a main body, a protrusion connected to the main body, and a channel, the protrusion covers a portion of the bottom surface of the semiconductor wafer and has an inclined inner surface, the channel is located below the bottom surface of the semiconductor wafer, the channel has an inlet and an outlet, and the inlet is closer to the semiconductor wafer than the outlet, wherein the protrusion includes a plurality of protrusion patterns that are not connected to each other, and each of the channels is located between two adjacent protrusion patterns.

9. The plating apparatus according to claim 8, wherein the inlet of the channel is located on the inclined inner surface of the protrusion. 10 . The plating apparatus according to claim 8 , wherein a top surface of the protrusion is coplanar with the bottom surface of the semiconductor wafer.

11. The plating device according to claim 8, wherein an outer surface of the body portion is aligned with an outer surface of the protrusion, the inclined inner surface of the protrusion is connected to the outer surface of the protrusion, and the outlet of the channel is located on the outer surface of the protrusion. 12 . The plating device according to claim 8 , wherein the body portion covers a side surface of the semiconductor wafer.

13. A plating method comprising: placing a semiconductor workpiece on a workpiece holder; The semiconductor workpiece is fixed to the workpiece holder by a clamping ring, wherein the clamping ring is connected to the workpiece holder, and the clamping ring includes a channel connecting the inner surface of the clamping ring with the outer surface of the clamping ring, wherein the clamping ring includes a body portion and a protrusion protruding from the bottom surface of the body portion, and the protrusion includes a plurality of protrusion patterns that are not connected to each other, and each of the channels is located between two adjacent protrusion patterns; Tilt the semiconductor workpiece to a first angle; Immersing the semiconductor workpiece in a plating solution in a plating tank and tilting the semiconductor workpiece to a second angle; as well as The semiconductor workpiece is plated. 14 . The plating method according to claim 13 , wherein the first angle is 3° relative to a liquid surface of the plating solution, and the second angle is 0° relative to the liquid surface of the plating solution. 15 . The plating method according to claim 13 , wherein the semiconductor workpiece is tilted to the second angle after being immersed in the plating solution. 16 . The plating method according to claim 13 , wherein bubbles are generated during immersion of the semiconductor workpiece in the plating solution, and the bubbles are removed through the channel of the clamping ring by rotating the semiconductor workpiece before plating the semiconductor workpiece.

Images